49th week of 2012 patent applcation highlights part 16 |
Patent application number | Title | Published |
20120305857 | POLY(AMIC ACID AMIDEIMIDE) TERTIARY AMINE INTERMEDIATE TRANSFER MEMBERS - An intermediate transfer member that includes a mixture of a poly(amic acid amideimide), a tertiary amine, an optional phosphate ester, an optional polysiloxane or an optional fluoro polymer, and an optional conductive filler component. | 2012-12-06 |
20120305858 | LOW TEMPERATURE FIREABLE THICK FILM SILVER PASTE - The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Pb-free bismuth-tellurium oxide both dispersed in an organic medium, wherein the paste is fireable at temperatures below 420° C. The paste is especially useful for forming electrodes on substrates such as glass or films, particularly electrochromic glass or films, that would be damaged by higher firing temperatures. The present invention is further directed to a device comprising an electrode formed from the paste composition and, in particular, to an electrochromic device comprising such an electrode. | 2012-12-06 |
20120305859 | LOW TEMPERATURE FIREABLE THICK FILM SILVER PASTE - The present invention is directed to an electroconductive thick film paste composition comprising Ag and a Ph-free Bi-based glass frit both dispersed in an organic medium, wherein the paste is fireable at temperatures below 420° C. The paste is especially useful for forming electrodes on substrates such as glass or films, particularly electrochromic glass or films, that would be damaged by higher firing temperatures. The present invention is further directed to a device comprising an electrode formed from the paste composition and, in particular, to an electrochromic device comprising such an electrode. | 2012-12-06 |
20120305860 | LIGHT CONVERSION EFFICIENCY ENHANCED SOLAR CELL FABRICATED WITH DOWNSHIFTING NANOMATERIAL - The light conversion efficiency of a solar cell ( | 2012-12-06 |
20120305861 | INORGANIC COMPOUNDS - The invention relates to a chemical compound of the formula Ni | 2012-12-06 |
20120305862 | WATER-BASED PRIMER COMPOSITIONS AND COATING METHODS USING THE SAME - This invention provides a water-based primer composition comprising (A) an aqueous dispersion of modified polyolefin, (B) an aqueous urethane resin and/or aqueous acrylic resin, (C) a pyrazole-blocked polyisocyanate compound and (D) an electrically conducting pigment, its (C) pyrazole-blocked polyisocyanate compound content being within a range of 5-50 mass % based on the total solid content of the components (A), (B) and (C), said electrically conducting pigment (D) containing an electrically conducting metal oxide (D-1), and the content of the electrically conducting pigment (D) being within a range of 50-200 mass parts per 100 mass parts of the total solid resin content in the composition; and also methods for coating plastic shaped articles using the composition. | 2012-12-06 |
20120305863 | POLYCARBONATE RESIN COMPOSITION AND MOLDED ARTICLE THEREOF - A polycarbonate resin composition which has high light transmission performance in the visible light region, excellent infrared shielding properties and excellent resistance to molding heat, can contribute to the reduction of an environmental burden, and has such high designability that it can be tinted in various colors as well as a molded article thereof. | 2012-12-06 |
20120305864 | Near Infrared Absorbing Agent and Near Infrared Absorbing Film - Disclosed herein is a method for preparing a near infrared absorbing agent. The method includes admixing tungsten trioxide and a reducing agent in water and allowing for a partial reduction of the tungsten trioxides to yield the near infrared absorbing agent. | 2012-12-06 |
20120305865 | TITANIUM DIOXIDE - The invention provides a composition imparting UV protective capability comprising an effect coated particulate material having a substantially rutile crystal habit and an average particle size greater than or equal to about 0.5 μm dispersed in a medium at a concentration within a range of about 1% by volume to about 40% by volume, based on the total volume of composition. The composition may be coloured or non-coloured and applied onto one or more surfaces of a substrate to provide UV light protection without also increasing UV light activated photocatalytic effects which are generally observed. | 2012-12-06 |
20120305866 | ROLLER SYSTEM - Roller system ( | 2012-12-06 |
20120305867 | TRANSPALLET - A description is given of a transpallet for handling goods stored on a support platform, at ground level, comprising a load supporting frame fitted with a pair of front arms for gripping and lifting the platform, a hydraulic or pneumatic unit for lifting the frame and a tiller arm for manoeuvring the truck directionally and lifting or lowering the frame,
| 2012-12-06 |
20120305868 | WALL GROMMET FOR POWER CONNECTION - Provided is a wall grommet, which can be installed through the surfaces of walls to route wiring in the walls' interior spaces. In particular, the wall grommet is configured for running power cords inside walls and presenting the electrical connectors of a power cord in a manner such that power cords are hidden from view. The grommet may comprise a power module and a back cover. The power module comprises a housing, which defines an interior space that is adapted to hold either the female connector or male connector of a power cord. The back cover can be attached to the housing to secure the electrical connector of the power cord in the housing. | 2012-12-06 |
20120305869 | HOIST USING FRICTION WHEEL - Disclosed is a hoist using a friction wheel to maximize horizontal movement of a load to be lifted while preventing a wire from deviating from a winding orbit while being wound on a wire drum, the friction wheel having a simplified configuration and being designed to stably support horizontal and vertical movable guide rollers. The hoist includes a single friction wheel on which a wire at a winding side is wound, a wire drum on which the wire at a drawing side is wound, a driven friction wheel through which the wire is guided from the friction wheel to the wire drum, vertical and horizontal stationary guide rollers and vertical and horizontal movable rollers for guidance of the wire, a movable roller mount to horizontally reciprocate the horizontal and vertical movable guide rollers, and upper and lower sheaves to guide the wire to the friction wheel. | 2012-12-06 |
20120305870 | CABLE PULLEY - The present disclosure relates to a cable pulley with a circumferentially extending groove for guiding a cable, wherein the cable pulley has a modular design and includes a wheel-shaped carrier body and a ring-shaped groove body, wherein the carrier body is at least partly made of a composite material, optionally a fiber-reinforced plastic material, and wherein the groove body circumferentially surrounds the carrier body and includes the groove. | 2012-12-06 |
20120305871 | Construction site fence panel foot boot - A construction site fence assembly having a foot plate attached and a foot plate cover attachment base unit for separating the fence assembly from traffic and to guide traffic. The base unit includes a pad that is tapered away from the construction site fence panel foot, creating a gentle sloping ramp. The sloping ramp may also include a delineator mount to attach a traffic delineator thereon top of the sloping ramp. | 2012-12-06 |
20120305872 | PHASE-CHANGE MEMORY DEVICE INCLUDING A VERTICALLY-STACKED CAPACITOR AND A METHOD OF THE SAME - A phase change memory device includes a vertically-stacked capacitor structure having large capacitance and small area. The phase change memory device includes a phase change memory structure, and the vertically-stacked capacitor structure electrically connected to the phase change memory structure and comprising a first capacitor and a second capacitor that are stacked and electrically connected in parallel to each other. | 2012-12-06 |
20120305873 | VERTICAL INTERCONNECT STRUCTURE, MEMORY DEVICE AND ASSOCIATED PRODUCTION METHOD - The present invention relates to a method for producing a vertical interconnect structure, a memory device and an associated production method, in which case, after the formation of a contact region in a carrier substrate a catalyst is produced on the contact region and a free-standing electrically conductive nanoelement is subsequently formed between the catalyst and the contact region and embedded in a dielectric layer. | 2012-12-06 |
20120305874 | Vertical Diodes for Non-Volatile Memory Device - A steering device. The steering device includes an n-type impurity region comprising a zinc oxide material and a p-type impurity region comprising a silicon germanium material. A pn junction region formed from the zinc oxide material and the silicon germanium material. The steering device is a serially coupled to a resistive switching device to provide rectification for the resistive switching device to form a non-volatile memory device. | 2012-12-06 |
20120305875 | PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a PCRAM device includes forming a switching device in a contact hole of a first interlayer insulating layer, forming a second interlayer insulating layer having an opening exposing the switching device, forming a lower electrode pattern along a sidewall of the second interlayer insulating layer to be coupled to the switching device, forming an insulating layer to be buried within the lower electrode pattern, forming a lower electrode by removing an exposed surface of the lower electrode pattern by a set height, wherein a height of a sidewall of the lower electrode is lower than that of the second interlayer insulating layer, forming a phase-change layer filing a hole of the second interlayer insulating layer from which the exposed surface of the lower electrode pattern is removed, and forming an upper electrode on the phase-change layer and a portion of the second interlayer insulating layer. | 2012-12-06 |
20120305876 | SCHOTTKY DIODE, RESISTIVE MEMORY DEVICE HAVING SCHOTTKY DIODE AND METHOD OF MANUFACTURING THE SAME - A schottky diode, a resistive memory device including the schottky diode and a method of manufacturing the same. The resistive memory device includes a semiconductor substrate including a word line, a schottky diode formed on the word line, and a storage layer formed on the schottky diode. The schottky diode includes a first semiconductor layer, a conductive layer formed on the first semiconductor layer and having a lower work function than the first semiconductor layer, and a second semiconductor layer formed on the to conductive layer. | 2012-12-06 |
20120305877 | NON-VOLATILE MEMORY DEVICE HAVING A RESISTANCE-CHANGEABLE ELEMENT AND METHOD OF FORMING THE SAME - A non-volatile memory device is provided wherein a lower molding layer is formed on a substrate; a first horizontal interconnection is formed on the lower molding layer; an upper molding layer is formed on the first horizontal interconnection; a pillar is formed connected to the substrate by vertically passing through the upper molding layer, the first horizontal interconnection and the lower molding layer. The pillar has a lower part and an upper part, wherein the lower part is disposed on the same level as the first horizontal interconnection and has a first width and the upper part is disposed on a higher level than the first horizontal interconnection and has a second width different from the first width. | 2012-12-06 |
20120305878 | RESISTIVE SWITCHING MEMORY DEVICE - A nonvolatile memory element may include, but is not limited to: a first electrode; a second electrode; and a resistive switching material disposed between the first electrode and the second electrode, wherein at least one of the first electrode or the second electrode includes at least one of a metal cation or metalloid cation having a valence state, oxidation state or oxidation number and wherein the resistive switching material includes at least one of a metal cation or a metalloid cation having the same valence state oxidation state or oxidation number as the at least one of a metal cation or metalloid cation of the at least one of the first electrode or the second electrode. | 2012-12-06 |
20120305879 | SWITCHING DEVICE HAVING A NON-LINEAR ELEMENT - A switching device includes a substrate; a first electrode formed over the substrate; a second electrode formed over the first electrode; a switching medium disposed between the first and second electrode; and a nonlinear element disposed between the first and second electrodes and electrically coupled in series to the first electrode and the switching medium. The nonlinear element is configured to change from a first resistance state to a second resistance state on application of a voltage greater than a threshold. | 2012-12-06 |
20120305880 | RESISTIVE RANDOM ACCESS MEMORY WITH ELECTRIC-FIELD STRENGTHENED LAYER AND MANUFACTURING METHOD THEREOF - This invention belongs to the technical field of memories and specifically relates to a resistive random access memory structure with an electric-field strengthened layer and a manufacturing method thereof. The resistive random access memory in the present invention can include a top electrode, a bottom electrode and a composite layer which is placed between the top electrode and the bottom electrode and have a first resistive switching layer and a second resistive switching and electric-field strengthened layer; the second resistive switching and electric-field strengthened layer cab be adjacent to the first resistive switching layer and have a dielectric constant lower than that of the first resistive switching layer. The electric-field distribution in the RRAM unit is adjustable. | 2012-12-06 |
20120305881 | Nitrogen Doped Aluminum Oxide Resistive Random Access Memory - A resistive random access memory (RRAM) device is provided that includes a first electrode, a second electrode, and a resistance-change film disposed between the first electrode and the second electrode, where the resistance-change film includes an atomic ratio of aluminum, oxygen and nitrogen. | 2012-12-06 |
20120305882 | NiO-based Resistive Random Access Memory and the Preparation Method Thereof - The present invention belongs to the technical field of memory storage and specially relates to a NiO-based resistive random access memory system (RRAM) and a preparation method thereof. The RRAM is comprised of a substrate and a metal-insulator-metal (MIM) structure, wherein the electrodes are metal films, such as copper, aluminum, etc., capable of being applied to the interconnection process, and the resistive switching insulator is an Al | 2012-12-06 |
20120305883 | METAL OXIDE RESISTIVE SWITCHING MEMORY AND METHOD FOR MANUFACTURING SAME - The present disclosure relates to the microelectronics field, and particularly, to a metal oxide resistive switching memory and a method for manufacturing the same. The method may comprise: forming a W-plug lower electrode above a MOS device; sequentially forming a cap layer, a first dielectric layer, and an etching block layer on the W-plug lower electrode; etching the etching block layer, the first dielectric layer, and the cap layer to form a groove for a first level of metal wiring; sequentially forming a metal oxide layer, an upper electrode layer, and a composite layer of a diffusion block layer/a seed copper layer/a plated copper layer in the groove for the first level of metal wiring; patterning the upper electrode layer and the composite layer by CMP, to form a memory cell and the first level of metal wiring in the groove in the first dielectric layer; and performing subsequent processes to complete the metal oxide resistive switching memory. According to the present disclosure, the manufacture process can be simplified, without incorporating additional exposure steps in the standard process, resulting in advantages such as reduced cost. | 2012-12-06 |
20120305884 | VARIABLE RESISTANCE MEMORY DEVICE AND METHODS OF FORMING THE SAME - A method of forming a memory device includes forming a first interlayer insulating layer on a semiconductor substrate, forming a first electrode in the first interlayer insulating layer, the first electrode having a top surface of a rectangular shape extending in a first direction, and forming a variable resistance pattern on the first electrode, the variable resistance pattern having a bottom surface of a rectangular shape extending in a second direction crossing the first direction, the bottom surface of the variable resistance pattern contacting the first electrode, wherein the area of contact between the lower electrode and the variable resistance pattern is substantially equal to a multiplication of a minor axis length of a top surface of the first electrode and a minor axis length of a bottom surface of the variable resistance pattern. | 2012-12-06 |
20120305885 | VARIABLE RESISTANCE MEMORY DEVICE WITH AN INTERFACIAL ADHESION HEATING LAYER, SYSTEMS USING THE SAME AND METHODS OF FORMING THE SAME - A variable resistance memory element and method of forming the same. The memory element includes a first electrode, a resistivity interfacial layer having a first surface coupled to said first electrode; a resistance changing material, e.g. a phase change material, having a first surface coupled to a second surface of said resistivity interfacial layer, and a second electrode coupled to a second surface of said resistance changing material. | 2012-12-06 |
20120305886 | NANOWIRE FET WITH TRAPEZOID GATE STRUCTURE - In one embodiment, a method of providing a nanowire semiconductor device is provided, in which the gate structure to the nanowire semiconductor device has a trapezoid shape. The method may include forming a trapezoid gate structure surrounding at least a portion of a circumference of a nanowire. The first portion of the trapezoid gate structure that is in direct contact with an upper surface of the nanowire has a first width and a second portion of the trapezoid gate structure that is in direct contact with a lower surface of the nanowire has a second width. The second width of the trapezoid gate structure is greater than the first width of the trapezoid gate structure. The exposed portions of the nanowire that are adjacent to the portion of the nanowire that the trapezoid gate structure is surrounding are then doped to provide source and drain regions. | 2012-12-06 |
20120305887 | WHITE LIGHT EMITTING DIODE HAVING PHOTOLUMINESCENT LAYER - A white LED having a photoluminescent layer is provided, which includes a sapphire substrate, a gallium nitride buffer layer, an n-type gallium nitride layer, an aluminium gallium nitride multiquantum well, a p-type gallium nitride layer, a transparent conductive layer, a terbium-doped indium oxide layer as photoluminescent layer, a negative electrode, and a positive electrode, wherein the gallium nitride buffer layer, the n-type gallium nitride layer, the aluminium gallium nitride multiquantum well, the p-type gallium nitride layer, the transparent conductive layer, the terbium-doped indium oxide layer are sequentially formed on the sapphire substrate, and the negative electrode is formed on the exposed portion of the n-type gallium nitride layer and is electrically connected to the negative terminal V− of the power source, and the positive electrode is formed on the terbium-doped indium oxide layer and is electrically connected to the positive terminal V+ of the power source. | 2012-12-06 |
20120305888 | LIGHT-EMITTING DIODE WITH STRAIN-RELAXED LAYER - Disclosed is a light-emitting diode (LED) and the method to form the LED. The LED comprises: a first conductivity type semiconductor layer; a strain-relaxed layer over the first conductivity type semiconductor layer, the strain-relaxed layer comprising: a strain-absorbed layer over the first conductivity type semiconductor layer, the strain-absorbed layer containing a plurality of cavities in a substantial hexagonal-pyramid form; and a surface-smoothing layer on the strain-absorbed layer filling the cavities; an active layer over the strain-relaxed layer; and a second conductivity type semiconductor layer over the active layer. | 2012-12-06 |
20120305889 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a light emitting structure including a first conductive-type semiconductor layer, a second conductive-type semiconductor layer and an active layer interposed between the first conductive-type semiconductor layer and the second conductive-type semiconductor layer, a first electrode layer electrically connected to the first conductive-type semiconductor layer, and a second electrode layer disposed on the second conductive-type semiconductor layer, wherein the second electrode layer includes a plurality of adhesive seeds spaced from one another on the light emitting structure, a reflective layer disposed on the plurality of adhesive seeds, and a protective layer disposed on the reflective layer, wherein the reflective layer contains silver (Ag) or an Ag alloy. As a result, it is possible to improve light reflectance and electrical properties of the electrode layer of the light emitting device and reliability of the electrode layer. | 2012-12-06 |
20120305890 | LIGHT-EMITTING DIODE, LIGHT-EMITTING DIODE LAMP AND LIGHTING DEVICE - A light-emitting diode, including a light emitting section including an active layer having a quantum well structure in which well layers having the composition: (In | 2012-12-06 |
20120305891 | GRAPHENE CHANNEL TRANSISTORS AND METHOD FOR PRODUCING SAME - Embodiments of graphene channel transistors and methods for producing same are provided herein. In some embodiments, a graphene channel transistor may include a substrate a having a source region, a drain region, and a dielectric material disposed between the source and drain regions; a channel region comprising a graphene layer disposed atop the dielectric material and partially atop the source and drain regions; and a composite gate electrode comprising an insulator layer disposed atop the graphene layer and a conductive layer disposed atop the insulator layer. | 2012-12-06 |
20120305892 | ELECTRONIC DEVICE, METHOD OF MANUFACTURING A DEVICE AND APPARATUS FOR MANUFACTURING A DEVICE - An electronic device comprises an in-plane component formed in an organic semiconductor layer, desirably graphene, on a flexible substrate. The component is formed using imprint lithography to create a trench through the organic semiconductor layer in a roll-to-roll process. The number of process steps required is limited to allow manufacture of the device in a single integrated apparatus. | 2012-12-06 |
20120305893 | TRANSISTOR DEVICE - The invention provides transistor device comprising a source, a drain and a connecting channel, the channel is a nano-structure device adapted to allow current flow between the source and drain. The channel comprises an ultra-high doping concentration and is of the same polarity as in the source and/or drain. Essentially the transistor device of the present invention acts as a junctionless, highly-doped gated resistor. In the context of optimal performance of the transistor high doping means equal to or exceeds 1×10 | 2012-12-06 |
20120305894 | BLUE PHOSPHORESCENT COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - Disclosed are a blue phosphorescent compound with a high color purity and a high efficiency, and an organic electroluminescent device using the same. The blue phosphorescent compound is represented by the following Formula: | 2012-12-06 |
20120305895 | LIGHT EMITTING DEVICES AND COMPOSITIONS - A light emitting composition includes a light-emitting iridium-functionalized nanoparticle, such as a compound of formula (I). The compound of formula (I) further comprises at least one host attached to the core. A light emitting device includes an anode, a cathode, and a layer containing such a light-emitting composition is also disclosed. In an embodiment, the light emitting device can emit white light. | 2012-12-06 |
20120305896 | Organometallic Complex, Organic Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A novel and highly reliable organometallic complex which has an emission region in the wavelength band of blue to yellow is provided. A light-emitting element using the organometallic complex, a light-emitting device, an electronic device, and a lighting device each using the light-emitting element are provided. An organometallic complex including a structure represented by General Formula (G1) is provided. The organometallic complex including the structure represented by General Formula (G1) is a novel and highly reliable organometallic complex which has an emission region in the wavelength band of blue to yellow. In addition, a light-emitting element using the organometallic complex, a light-emitting device, an electronic device, and a lighting device each including the light-emitting element are provided. | 2012-12-06 |
20120305897 | Methods of Making Patterned Structures of Fluorine-Containing Polymeric Materials and Fluorine-Containing Polymers - Methods and compositions for obtaining patterned structures comprising fluorine-containing polymeric materials. The fluorine-containing polymeric materials have sufficient fluorine content such that the materials can be patterned using conventional photolithographic/pattern transfer methods and maintain desirable mechanical and physical properties. The patterned structures can be used, for example, in light-emitting devices. | 2012-12-06 |
20120305898 | ORGANIC ELECTROLUMINESCENCE ELEMENT, MANUFACTURING METHOD THEREOF, AND ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - An organic EL element ( | 2012-12-06 |
20120305899 | POLYMER COMPOUND, AND THIN FILM AND INK COMPOSITION EACH CONTAINING SAME - An object of the present invention is to provide a polymer compound providing high charge mobility. The polymer compound of the present invention has a repeating unit represented by the formula ( | 2012-12-06 |
20120305900 | COMPOUND FOR ORGANIC PHOTOELECTRIC DEVICE AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME - A compound for an organic photoelectric device, the compound being represented by the following Chemical Formula (“CF”) 1: | 2012-12-06 |
20120305901 | QUINOXALINE DERIVATIVES AND ORGANIC LIGHT-EMITTING DIODES COMPRISING THE SAME - A quinoxaline derivative represented by Formula (I) of | 2012-12-06 |
20120305902 | MICROCAVITY OLEDS FOR LIGHTING - Various methods and systems are provided for related to organic light emitting diodes (OLEDs) having a microcavity In one embodiment, a white-light source includes a first microcavity organic light emitting diode (OLED) configured to emit a narrow spectrum of blue light, a second microcavity OLED configured to emit a narrow spectrum of green light, and a third microcavity OLED configured to emit a narrow spectrum of red light In another embodiment, a light source includes a plurality of OLEDs disposed on a glass substrate Each of the OLEDs is configured to emit light in substantially orthogonal to the glass substrate in a predefined spectrum Each of the OLEDs includes a semi-reflecting mirror, and an emitting layer, where the emitting layer in each OLED corresponds to a respective color of light emitted by the OLED. | 2012-12-06 |
20120305903 | ORGANIC ELECTROLUMINESCENT DEVICE - Disclosed is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, sufficiently secures driving stability, and has a simple configuration. This organic EL device is constituted of an anode, organic layers comprising a phosphorescent light-emitting layer, and a cathode piled one upon another on a substrate and at least one organic layer selected from a light-emitting layer, an electron-transporting layer, and a hole-blocking layer contains an indolocarbazole compound represented by general formula (1). In the case where the indolocarbazole compound is incorporated in the light-emitting layer containing a phosphorescent dopant and a host material, it is incorporated as the host material. Some of such indolocarbazole compounds are represented by the following formula (2): wherein each of A | 2012-12-06 |
20120305904 | Organic Electroluminescent Device - Disclosed is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, sufficiently secures driving stability, and has a simple configuration. This organic EL device has a light-emitting layer between an anode and a cathode piled one upon another on a substrate and the said light-emitting layer contains a fused polycyclic compound in which seven or more rings are fused together as a host material. The aforementioned fused polycyclic compound has a structure formed by fusing two or more indole rings to a carbazole ring. A specific example thereof is the compound represented by the following formula. | 2012-12-06 |
20120305905 | METHOD OF PRODUCING PHOTOELECTRIC CONVERSION ELEMENT, PHOTOELECTRIC CONVERSION ELEMENT AND PHOTOELECTROCHEMICAL CELL - A method of producing a photoelectric conversion element, which contains an electrically conductive support, a photosensitive layer having porous semiconductor fine particles that have adsorbed a dye formed on the support, a charge transfer layer; and a counter electrode; containing the steps of: applying a dispersion liquid, in which the content of solids excluding semiconductor fine particles is 1% by mass or less based on the total amount of the dispersion liquid, on the support, to form a coating; heating the coating, to obtain porous semiconductor fine particles; and sensitizing the porous semiconductor fine particles by a dye having a structure represented by Formula (1): | 2012-12-06 |
20120305906 | COMPOUND INCLUDING INDOLE DERIVATIVE, ORGANIC ELECTRONIC ELEMENT USING SAME, AND TERMINAL THEREOF - Disclosed are a compound including an indole derivative, an organic electronic element using the same, and a terminal thereof. | 2012-12-06 |
20120305907 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR FABRICATING LIGHT-EMITTING ELEMENT - Objects of the present invention are to provide a light-emitting element that does not readily deteriorate, a light-emitting device and an electronic device that do not readily deteriorate, and a method of fabricating the light-emitting element that does not readily deteriorate. A light-emitting element having an EL layer between a pair of electrodes is covered with a layer containing an inorganic compound and halogen atoms or a layer containing an organic compound, an inorganic compound, and halogen atoms, whereby deterioration by moisture penetration can be inhibited. Thus, a light-emitting element with a long life can be obtained. | 2012-12-06 |
20120305908 | ORGANIC ELECTROLUMINESCENCE DEVICE AND DISPLAY - In an organic electroluminescence device including a cathode and an anode, at least an emitting layer and an electron transporting layer are provided between the cathode and the anode. The emitting layer contains a host material formed of a naphthacene derivative represented by the following formula (1) and a dopant material formed of a compound having a pyrromethene skeleton represented by the following formula (2) or a metal complex of the compound. The electron transporting layer is preferably a benzoimidazole derivative. | 2012-12-06 |
20120305909 | Light-Emitting Element, Light-Emitting Device, and Electronic Device - Disclosed is a light-emitting element with a good carrier balance and manufacturing method thereof which does not require the formation of the heterostructure. The light-emitting element includes an organic compound film containing a first organic compound as the main component (base material) between an anode and a cathode, wherein the organic compound film is provided in contact with the anode and with the cathode. The first organic compound further includes a light-emitting region to which a light-emitting substance is added and includes a hole-transport region to which a hole-trapping substance is added and/or an electron-transport region to which an electron-trapping substance is added. The hole-transport region is located between the light-emitting region and the anode, and the electron-transport region is located between the light-emitting region and the cathode. | 2012-12-06 |
20120305910 | HYBRID THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF AND DISPLAY PANEL HAVING THE SAME - A hybrid thin film transistor includes a first thin film transistor and a second thin film transistor. The first thin film transistor includes a first gate, a first source, a first drain and a first semiconductor layer disposed between the first gate, the first source and the first drain, and the first semiconductor layer includes a crystallized silicon layer. The second thin film transistor includes a second gate, a second source, a second drain and a second semiconductor layer disposed between the second gate, the second source and the second drain, and the second semiconductor layer includes a metal oxide semiconductor layer. | 2012-12-06 |
20120305911 | THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD FOR THE SAME - Provided is a thin film transistor having a semiconductor film disposed in a plurality of portions on a substrate, a source electrode and a drain electrode which are disposed, on a semiconductor film, in contact with the semiconductor film while being spaced from each other, and a gate electrode which is disposed across the source electrode and the drain electrode via a gate insulating film; an auxiliary capacitance electrode which is disposed on the semiconductor film while in contact with the semiconductor film; a source line which has the semiconductor film in a lower layer, extends from the source electrode; a gate line which extends from the gate electrode; a pixel electrode which is electrically connected to the drain electrode; and an auxiliary capacitance electrode connecting line which electrically connects the auxiliary capacitance electrodes to each other in the adjacent pixels. | 2012-12-06 |
20120305912 | DISPLAY DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - One embodiment of the present invention provides a highly reliably display device in which a high mobility is achieved in an oxide semiconductor. A first oxide component is formed over a base component. Crystal growth proceeds from a surface toward an inside of the first oxide component by a first heat treatment, so that a first oxide crystal component is formed in contact with at least part of the base component. A second oxide component is formed over the first oxide crystal component. Crystal growth is performed by a second heat treatment using the first oxide crystal component as a seed, so that a second oxide crystal component is formed. Thus, a stacked oxide material is formed. A transistor with a high mobility is formed using the stacked oxide material and a driver circuit is formed using the transistor. | 2012-12-06 |
20120305913 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions. | 2012-12-06 |
20120305914 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE - To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode. | 2012-12-06 |
20120305915 | FIELD-EFFECT TRANSISTOR AND METHOD FOR FABRICATING FIELD-EFFECT TRANSISTOR - A method for fabricating a field-effect transistor having a gate electrode, a source electrode, a drain electrode, and an active layer forming a channel region, the active layer having an oxide semiconductor mainly containing magnesium and indium is disclosed. The method includes a deposition step of depositing an oxide film, a patterning step of patterning the oxide film by processes including etching to obtain the active layer, and a heat-treatment step of heat-treating the obtained active layer subsequent to the patterning step. | 2012-12-06 |
20120305916 | Interposer Test Structures and Methods - An embodiment of the disclosure is a structure comprising an interposer. The interposer has a test structure extending along a periphery of the interposer, and at least a portion of the test structure is in a first redistribution element. The first redistribution element is on a first surface of a substrate of the interposer. The test structure is intermediate and electrically coupled to at least two probe pads. | 2012-12-06 |
20120305917 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first semiconductor chip that includes a driver circuit, a second semiconductor chip that includes a receiver circuit and an external terminal, and a plurality of through silicon vias that connect the first semiconductor chip and the second semiconductor chip. The first semiconductor chip further includes an output switching circuit that selectively connects the driver circuit to any one of the through silicon vias, the second semiconductor chip further includes an input switching circuit that selectively connects the receiver circuit to any one of the through silicon vias and the external terminal, the input switching circuit includes tri-state inverters each inserted between the receiver circuit and an associated one of the through silicon vias and the external terminal, and the input switching circuit activates any one of the tri-state inverters. | 2012-12-06 |
20120305918 | PEROVSKITE SEMICONDUCTOR THIN FILM AND METHOD OF MAKING THEREOF - Perovskite semiconductor thin films and the method of making Perovskite semiconductor thin films are disclosed. Perovskite semiconductor thin films were deposited on inexpensive substrates such as glass and ceramics. CsSnI | 2012-12-06 |
20120305919 | FULLERENE DERIVATIVES AND OPTOELECTRONIC DEVICES UTILIZING THE SAME - Disclosed is a fullerene derivative having a formula of F-Cy, wherein F is an open-cage fullerene, and Cy is a chalcogenyl group. The fullerene derivative can be applied to hydrogen storage material and an optoelectronic device such as an organic light emitting diode (OLED), a solar cell, or an organic thin film transistor (TFT). | 2012-12-06 |
20120305920 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF, DISPLAY APPARATUS AND ELECTRONIC APPARATUS - A semiconductor device including: a first electric conductor of a lower layer side and a second electric conductor of an upper layer side; a thick film insulating layer provided between the first electric conductor and the second electric conductor; and a contact portion formed so as to imitate an inner surface shape of a through hole with respect to the insulating layer and electrically connecting the first electric conductor and the second electric conductor, in which a tapered angle of the through hole is an acute angle. | 2012-12-06 |
20120305921 | THIN FILM TRANSISTOR, MANUFACTURING METHOD OF THIN FILM TRANSISTOR, AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME - A thin film transistor may include a substrate, a buffer layer on the substrate, a semiconductor layer formed on the buffer layer, a gate insulating pattern on the semiconductor layer, a gate electrode on the gate insulating pattern, an interlayer insulating layer covering the gate electrode and the gate insulating pattern, the interlayer insulating layer having a contact hole and an opening extending therethrough, the contact hole exposing a source area and a drain area of the semiconductor layer, and the opening exposing a channel area of the semiconductor layer, and a source electrode and a drain electrode formed on the interlayer insulating layer, the source electrode being connected with the source area and the drain electrode being connected with the drain area of the semiconductor layer. | 2012-12-06 |
20120305922 | DISPLAY DEVICE, ELECTRONIC APPARATUS, AND METHOD OF FABRICATING THE DISPLAY DEVICE - It is an object of the invention to provide a technique to manufacture a display device with high image quality and high reliability at low cost with high yield. The invention has spacers over a pixel electrode layer in a pixel region and over an insulating layer functioning as a partition which covers the periphery of the pixel electrode layer. When forming a light emitting material over a pixel electrode layer, a mask for selective formation is supported by the spacers, thereby preventing the mask from contacting the pixel electrode layer due to a twist and deflection thereof. Accordingly, such damage as a crack by the mask does not occur in the pixel electrode layer. Thus, the pixel electrode layer does not have a defect in shapes, thereby a display device which performs a high resolution display with high reliability can be manufactured. | 2012-12-06 |
20120305923 | DISPLAY DEVICE - The inventors found out that in the case of performing a low gray scale display in which a very small amount of current is supplied to a light emitting element, variations in threshold voltages of driving transistors become notable since the gate-source voltage is low. In view of this, the invention provides a display device in which variations in the threshold voltages of the driving transistors are reduced even in the low gray scale display, and a driving method thereof. According to the invention, a gate-source voltage of the driving transistor is set higher in the low gray scale display than that in the high gray scale display. As one mode to achieve this, different power source lines are provided for the low gray scale display and the high gray scale display and their potentials are set to be different. | 2012-12-06 |
20120305924 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THEREOF - To provide a liquid crystal display device having high quality display by obtaining a high aperture ratio while securing a sufficient storage capacitor (Cs), and at the same time, by dispersing a load (a pixel writing-in electric current) of a capacitor wiring in a timely manner to effectively reduce the load. A scanning line is formed on a different layer from a gate electrode and the capacitor wiring is arranged so as to be parallel with a signal line. Each pixel is connected to the individually independent capacitor wiring via a dielectric. Therefore, variations in the electric potential of the capacitor wiring caused by a writing-in electric current of a neighboring pixel can be avoided, whereby obtaining satisfactory display images. | 2012-12-06 |
20120305925 | THIN-FILM TRANSISTOR SUBSTRATE - Gate electrodes, a gate insulating layer, and an oxide semiconductor layer are simultaneously formed to form a multilayer structure, so that an SOG film serves as an etching stopper on channel regions in forming source electrodes and drain electrodes. In the SOG film, channel isolation holes are formed in positions each of which is located between adjacent two of TFTs connected to a common one of the gate lines, and corresponds to the common gate line. The oxide semiconductor layer of the adjacent TFTs is divided in each channel isolation hole. Terminal sections of the gate lines are exposed in the terminal section exposing holes formed in positions each corresponding to a gate line end portion. The pixel electrode is made of a film identical to a film forming one layer included in the drain electrode. | 2012-12-06 |
20120305926 | SOLID-STATE IMAGING DEVICE, PROCESS OF MAKING SOLID STATE IMAGING DEVICE, DIGITAL STILL CAMERA, DIGITAL VIDEO CAMERA, MOBILE PHONE, AND ENDOSCOPE - A solid-state imaging device includes an array of pixels, each pixel includes: a pixel electrode; an organic layer; a counter electrode; a sealing layer; a color filter; a readout circuit; and a light-collecting unit as defined herein, the photoelectric layer contains an organic p type semiconductor and an organic n type semiconductor, the organic layer further includes a charge blocking layer as defined herein, an ionization potential of the charge blocking layer and an electron affinity of the organic n type semiconductor in the photoelectric layer has a difference of at least 1 eV, and the sealing layer includes a first sealing sublayer formed by atomic layer deposition and a second sealing sublayer formed by physical vapor deposition and containing one of a metal oxide, a metal nitride, and a metal oxynitride. | 2012-12-06 |
20120305927 | DISPLAY DEVICE - The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the o electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode. | 2012-12-06 |
20120305928 | METHODOLOGY FOR FABRICATING ISOTROPICALLY RECESSED SOURCE REGIONS OF CMOS TRANSISTORS - A Field Effect Transistor (FET) device includes a gate stack formed over a channel region, a source region adjacent to the channel region, wherein a portion of a boundary between the source region and the channel region is defined along a plane defined by a sidewall of the gate stack, a drain region adjacent to the channel region, a portion of the drain region arranged below the gate stack, a native oxide layer disposed over a portion of the source region, along sidewalls of the gate stack, and over a portion of the drain region, a spacer arranged over a portion of the native oxide layer above the source region and the drain region and along the native oxide layer along the sidewalls of the gate stack. | 2012-12-06 |
20120305929 | BEOL COMPATIBLE FET STRUCTRURE - This invention provides structures and a fabrication process for incorporating thin film transistors in back end of the line (BEOL) interconnect structures. The structures and fabrication processes described are compatible with processing requirements for the BEOL interconnect structures. The structures and fabrication processes utilize existing processing steps and materials already incorporated in interconnect wiring levels in order to reduce added cost associated with incorporating thin film transistors in the these levels. The structures enable vertical (3D) integration of multiple levels with improved manufacturability and reliability as compared to prior art methods of 3D integration. | 2012-12-06 |
20120305930 | SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD FOR SAME - A semiconductor device of the present invention includes an n-channel first thin film transistor and a p-channel second thin film transistor on one and the same substrate. The first thin film transistor has a first semiconductor layer ( | 2012-12-06 |
20120305931 | GOLD-FREE OHMIC CONTACTS - A semiconductor structure is provided having: a semiconductor; a gold-free electrically conductive structure in ohmic contact with the semiconductor; and a pair of electrically conductive layers separated by a layer of silicon. The structure includes: a refractory metal layer disposed in contact with the semiconductor; and wherein one of the pair of electrically conductive layers separated by the layer of silicon is the refractory metal layer. A second layer of silicon is disposed on a second one of the pair of pair of electrically conductive layers and including a third electrically conducive layer on the second layer of silicon. In one embodiment, the semiconductor includes a III-V material. | 2012-12-06 |
20120305932 | LATERAL TRENCH MESFET - A transistor includes a trench formed in a semiconductor body, the trench having sidewalls and a bottom. The transistor further includes a first semiconductor material disposed in the trench adjacent the sidewalls and a second semiconductor material disposed in the trench and spaced apart from the sidewalls by the first semiconductor material. The second semiconductor material has a different band gap than the first semiconductor material. The transistor also includes a gate material disposed in the trench and spaced apart from the first semiconductor material by the second semiconductor material. The gate material provides a gate of the transistor. Source and drain regions are arranged in the trench with a channel interposed between the source and drain regions in the first or second semiconductor material so that the channel has a lateral current flow direction along the sidewalls of the trench. | 2012-12-06 |
20120305933 | GROUP III NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A group III nitride semiconductor light-emitting device includes a GaN crystal substrate and at least one group III nitride semiconductor layer disposed on a main surface of the GaN crystal substrate. The substrate includes a matrix crystal region and a c-axis-inverted crystal region. An off angle θ is formed between the main surface and a {0001} plane, and an off-angle component of a first direction has an absolute value |θ | 2012-12-06 |
20120305934 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A nitride semiconductor light emitting element has: a substrate for growth; an n-type nitride semiconductor layer formed on the substrate for growth; a light emitting layer formed on the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer formed on the light emitting layer, wherein pipe holes are formed at a density of 5000 pipe holes/cm | 2012-12-06 |
20120305935 | APPARATUS FOR PRODUCING METAL CHLORIDE GAS AND METHOD FOR PRODUCING METAL CHLORIDE GAS, AND APPARATUS FOR HYDRIDE VAPOR PHASE EPITAXY, NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR DEVICE, WAFER FOR NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE, METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR FREESTANIDNG SUBSTRATE AND NITRIDE SEMICONDUCTOR CRYSTAL - There is provided an apparatus for producing metal chloride gas, comprising: a source vessel configured to store a metal source; a gas supply port configured to supply chlorine-containing gas into the source vessel; a gas exhaust port configured to discharge metal chloride-containing gas containing metal chloride gas produced by a reaction between the chlorine-containing gas and the metal source, to outside of the source vessel; and a partition plate configured to form a gas passage continued to the gas exhaust port from the gas supply port by dividing a space in an upper part of the metal source in the source vessel, wherein the gas passage is formed in one route from the gas supply port to the gas exhaust port, with a horizontal passage width of the gas passage set to 5 cm or less, with bent portions provided on the gas passage. | 2012-12-06 |
20120305936 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a nitride semiconductor layer; a source electrode, a gate electrode and a drain electrode; an insulating layer covering at least the gate electrode and a part of the nitride semiconductor layer; and a field plate on the insulating layer, a width of a region of the field plate between an edge of the field plate of a side of the drain electrode and an edge of the side face of the insulating layer covering a side face of the gate electrode of a side of the drain electrode being 0.1 μm or more, a distance between an edge of the field plate and an edge of the drain electrode in a contact face between the nitride semiconductor layer and the drain electrode being 3.5 μm or more, an operating frequency of the semiconductor device being 4 GHz or less. | 2012-12-06 |
20120305937 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting diode, and method of fabricating same, wherein an indium (In)-containing light-emitting layer, as well as subsequent device layers, is deposited on a textured surface. The resulting device is a phosphor-free white light source. | 2012-12-06 |
20120305938 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light emitting device is provided. The semiconductor light emitting device includes a first nitride layer, an active layer, and a second nitride layer. The first nitride layer includes an irregular, uneven surface, and the active layer is formed on the irregular, uneven surface. The second nitride layer is formed on the active layer. A plurality of quantum dots are formed at the active layer. | 2012-12-06 |
20120305939 | LIGHT EMITTING DIODES INCLUDING BARRIER SUBLAYERS - Semiconductor light emitting devices, such as light emitting diodes, include a substrate, an epitaxial region on the substrate that includes a light emitting region such as a light emitting diode region, and a multilayer conductive stack including a reflector layer, on the epitaxial region. A barrier layer is provided on the reflector layer and extending on a sidewall of the reflector layer. The multilayer conductive stack can also include an ohmic layer between the reflector and the epitaxial region. The barrier layer further extends on a sidewall of the ohmic layer. The barrier layer can also extend onto the epitaxial region outside the multilayer conductive stack. The barrier layer can be fabricated as a series of alternating first and second sublayers. | 2012-12-06 |
20120305940 | Defect Free Si:C Epitaxial Growth - A method and structure are disclosed for a defect free Si:C source/drain in an NFET device. A wafer is accepted with a primary surface of {100} crystallographic orientation. A recess is formed in the wafer in such manner that the bottom surface and the four sidewall surfaces of the recess are all having {100} crystallographic orientations. A Si:C material is eptaxially grown in the recess, and due to the crystallographic orientations the defect density next to each of the four sidewall surfaces is essentially the same as next to the bottom surface. The epitaxially filled recess is used in the source/drain fabrication of an NFET device. The NFET device is oriented along the <100> crystallographic direction, and has the device channel under a tensile strain due to the defect free Si:C in the source/drain. | 2012-12-06 |
20120305941 | WELL REGION FORMATION METHOD AND SEMICONDUCTOR BASE - A well region formation method and a semiconductor base in the field of semiconductor technology are provided. A method comprises: forming isolation regions in a semiconductor substrate to isolate active regions; selecting at least one of the active regions, and forming a first well region in the selected active region; forming a mask to cover the selected active region, and etching the rest of the active regions, so as to form grooves; and growing a semiconductor material by epitaxy to till the grooves. Another method comprises: forming isolation regions in a semiconductor substrate for isolating active regions; forming well regions in the active regions; etching the active regions to form grooves, such that the grooves have a depth less than or equal to a depth of the well regions; and growing a semiconductor material by epitaxy to till the grooves. | 2012-12-06 |
20120305942 | EPITAXIAL SUBSTRATE, LIGHT-EMITTING DIODE, AND METHODS FOR MAKING THE EPITAXIAL SUBSTRATE AND THE LIGHT-EMITTING DIODE - An epitaxial substrate includes: a base member; and a plurality of spaced apart light-transmissive members, each of which is formed on and tapers from an upper surface of the base member, and each of which is made of a light-transmissive material having a refractive index lower than that of the base member. A light-emitting diode having the epitaxial substrate, and methods for making the epitaxial substrate and the light-emitting diode are also disclosed. | 2012-12-06 |
20120305943 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A drift layer has a thickness direction throughout which a current flows and has an impurity concentration N | 2012-12-06 |
20120305944 | SEMICONDUCTOR ELEMENT - A semiconductor element according to the present invention can perform both a transistor operation and a diode operation via its channel layer. If the potential Vgs of its gate electrode | 2012-12-06 |
20120305945 | POWER SEMICONDUCTOR DEVICE - Provided is a power semiconductor device comprising a bonding joint that, even under a temperature environment of 150° C. or greater enabling operation of a wide bandgap semiconductor, reduces cracking-destruction occurring owing to thermal cycle while conductively connecting an electrode, connection terminal, and semiconductor device substrate. | 2012-12-06 |
20120305946 | Modular High Density LED Array Light Sources - A modular LED array light source comprises an assembly of a plurality of solid-state LED array modules. Modules are abutted to provide a large area, high intensity, and high-density array that provides substantially uniform irradiance. Preferably, in each module, a linear or rectangular array of groups of LED is provided in which the density of LED die in the array is higher at ends or edges of the modules abutting other modules, to provide improved uniformity of irradiance over the illuminated area between modules. Particular arrangements of clusters of LEDs are provided that reduce or overcome the discontinuity or dip in irradiance due to edge or wall effects caused by the spacing of LED die from edges of the substrate/packaging of each module. These arrangements are advantageous for hermetically sealed LED array modules, for example, which require a minimum wall thickness for an effective seal. | 2012-12-06 |
20120305947 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A thin film transistor substrate and a method for fabricating the same are discussed. According to an embodiment, the thin film transistor substrate includes a gate line arranged on a substrate in a first direction; a data line arranged in a second direction crossing the gate line to define adjacent first and second pixel regions, the data line being used in common by the first and second pixel regions; an entire common line arranged in the second direction substantially parallel with the data line; a thin film transistor including a gate electrode connected with the gate line, a source electrode connected with the data line, a drain electrode formed to face the source electrode, and an active layer formed to be overlapped with the gate electrode by interposing a gate insulating film between the active layer and the gate electrode; and a pixel electrode connected with the drain electrode. | 2012-12-06 |
20120305948 | LIGHT-EMITTING DIODE AND METHOD FOR MAKING THE SAME - A light-emitting diode includes: an epitaxial substrate including a base member, and a plurality of spaced apart first light-transmissive members; a light-emitting unit including a first-type semiconductor layer, a light-emitting layer, and a second-type semiconductor layer; and an electrode unit electrically connected to the light-emitting unit. The first-type semiconductor layer has a bottom film covering the first light-transmissive members, a plurality of spaced apart second light-transmissive members formed on a top face of the bottom film, and a top film formed on the bottom film to cover the second light-transmissive members. | 2012-12-06 |
20120305949 | Light Emitting Diode (LED) Arrays Including Direct Die Attach And Related Assemblies - An electronic device may include a packaging substrate having a packaging face and first and second pluralities of light emitting diodes electrically and mechanically coupled to the packaging face of the packaging substrate. The packaging substrate may include first and second electrically conductive pads on the packaging face. The light emitting diodes of the first plurality of light emitting diodes may be electrically coupled in parallel between the first electrically conductive pad and an interconnection structure on the packaging face. The light emitting diodes of the second plurality of light emitting diodes may be electrically coupled in parallel between the interconnection structure and the second electrically conductive pad. | 2012-12-06 |
20120305950 | DISPLAY APPARATUS - Disclosed is a method of making a display apparatus including a step of forming an underlying layer on a substrate, the underlying layer having a protrusion; and a step of depositing a material of a lens portion so as to form a film having a shape that follows a shape of the underlying layer. | 2012-12-06 |
20120305951 | LIGHT-EMITTING DEVICE HAVING LIGHT-EMITTING ELEMENTS - A light-emitting device operating on a high drive voltage and a small drive current. LEDs ( | 2012-12-06 |
20120305952 | ORGANIC EL DEVICE - An organic EL device includes: a bank provided to surround a first anode (second anode) on a substrate; a red emission layer (green emission layer) provided at an opening portion of the bank; a third anode having the same polarity as that of the first anode provided on the bank; a blue emission layer provided at an entire portion of the substrate including the third anode; and a cathode having a different polarity from those of the first anode and the third anode provided to cover the blue emission layer. | 2012-12-06 |
20120305953 | Mixed Light Source - A mixed light source comprising: a first radiation source, which emits radiation in the red spectral range; an excitation source, which contains a III-V semiconductor material; and a conversion substance, which, during the operation of the mixed light source, converts the radiation of the excitation source at least partly into radiation whose color locus in the CIE chromaticity diagram lies within a polygon spanned by the coordinates (0.1609; 0.497), (0.35; 0.6458), (0.558; 0.444) and (0.453; 0.415). | 2012-12-06 |
20120305954 | LIGHT EMITTING DEVICE, LIGHT EMITTING SYSTEM HAVING THE SAME, AND FABRICATING METHOD OF THE LIGHT EMITTING DEVICE AND THE LIGHT EMITTING SYSTEM - A semiconductor device includes a first light emitting chip, the first light emitting chip having a first semiconductor layer, a second semiconductor layer, and a first active layer disposed therebetween, a second light emitting chip disposed on the first light emitting chip, the second light emitting chip having a third semiconductor layer, a fourth semiconductor layer, and a second active layer disposed therebetween, and a conductive layer disposed between the first semiconductor layer and the fourth semiconductor layer, the first semiconductor layer and the fourth semiconductor layer having different conductivity types. | 2012-12-06 |
20120305955 | Luminescent Particles, Methods and Light Emitting Devices Including the Same - A luminescent particle includes a luminescent compound that is configured to perform a photon down conversion on a portion of received light. The luminescent compound includes a host compound material and an activator material that is combined with the host compound material. The activator material is provided in a quantity that limits a conversion efficiency of the luminescent compound to limit a decrease in the decrease in luminous intensity of light emitted from the luminescent compound and thus provide a given color shift of the a combined emission wavelength from a non-excited state to a steady-state excited condition. | 2012-12-06 |
20120305956 | LED PHOSPHOR PATTERNING - The present disclosure provides a method of patterning a phosphor layer on a light emitting diode (LED) emitter. The method includes providing at least one LED emitter disposed on a substrate; forming a polymer layer over the at least one LED emitter; providing a mask over the polymer layer and the at least one LED emitter; etching the polymer layer through the mask to expose the at least one LED emitter within a cavity having polymer layer walls; and coating the at least one LED emitter with phosphor. | 2012-12-06 |