49th week of 2014 patent applcation highlights part 17 |
Patent application number | Title | Published |
20140353625 | ORGANIC LIGHT EMITTING DIODES DISPLAYS AND MANUFACTURING METHOD THEREOF - A cracks propagation preventing, polarization film attaches to outer edges of a lower inorganic layer of an organic light emitting diodes display where the display is formed on a flexible substrate having the lower inorganic layer blanket formed thereon. The organic light emitting diodes display further includes a display unit positioned on the inorganic layer and including a plurality of organic light emitting diodes configured to display an image, and a thin film encapsulating layer covering the display unit and joining with edges of the inorganic layer extending beyond the display unit. | 2014-12-04 |
20140353626 | OPTICAL FILMS FOR REDUCING COLOR SHIFT AND ORGANIC LIGHT-EMITTING DISPLAY DEVICES EMPLOYING THE SAME - Optical films, and organic light-emitting display devices employing the same, include a high refractive index pattern layer including a lens pattern region and a non-pattern region alternately formed, wherein the lens pattern region includes a plurality of grooves each having a depth larger than a width thereof, and the non-pattern region has no pattern; and a low refractive index pattern layer formed of a material having a refractive index smaller than a refractive index of the high refractive index pattern layer, wherein the low refractive index pattern includes a plurality of filling portions filling the plurality of grooves. | 2014-12-04 |
20140353627 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a first substrate, an anode electrode, a pixel defining layer, an organic light emitting layer, a multi-layered complex, a passivation insulating layer and a second substrate. The anode electrode is disposed on the first substrate. The pixel defining layer is disposed on the first substrate and defines a display region and a peripheral region thereon. The organic light emitting layer is disposed on and covers the anode electrode and the pixel defining layer, and is configured to generate light. The multi-layered complex is disposed on and covers the organic light emitting layer, and is configured to apply a current to the organic light emitting layer. The multi-layered complex includes a plurality of conducting layers laminated to each other. The passivation insulating layer is disposed on and covers the multi-layered complex. The second substrate is disposed on the passivation insulating layer and corresponds to the first substrate. | 2014-12-04 |
20140353628 | Heteroaromatic Semiconducting polymers - The present teachings relate to new semiconducting polymers. The polymers disclosed herein can exhibit high carrier mobility and/or efficient light absorption/emission characteristics, and can possess certain processing advantages such as solution-processability and/or good stability at ambient conditions. | 2014-12-04 |
20140353629 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display including: a substrate; a semiconductor layer disposed on the substrate and including a switching semiconductor layer and a driving semiconductor layer connected to the switching semiconductor layer; a first gate insulating layer disposed on the semiconductor layer; a switching gate electrode and a driving gate electrode disposed on the first gate insulating layer and respectively overlapping with the switching semiconductor layer and the driving semiconductor layer; a second gate insulating layer disposed on the switching gate electrode and the driving gate electrode; a driving voltage line configured to transmit a driving voltage and disposed on the second gate insulating layer; an interlayer insulating layer disposed on the driving voltage line and the second gate insulating layer; and a data line configured to transmit a data signal and disposed on the interlayer insulating layer. | 2014-12-04 |
20140353630 | ORGANIC WHITE LIGHT EMITTING DISPLAY APPARATUS - Disclosed is an organic white light emitting display apparatus. The organic white light emitting device includes a first substrate including a first sub-pixel area, a second sub-pixel area, a third sub-pixel area, and an organic light emitting device (OLED) that includes a first electrode, a second electrode, and an organic white light emitting layer interposed between the first and second electrodes, and emits whit light for respective sub-pixel areas, a second substrate including first, second, and third color filters of different colors formed on positions corresponding to the respective sub-pixel areas, the second substrate being arranged to face the first substrate, and a partition wall that is extended to an area between neighboring color filters among the color filters and partitions the sub-pixel areas, the partition wall being formed on the first substrate. | 2014-12-04 |
20140353631 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a thin film transistor including a first insulating layer between an active layer and a gate electrode, and a second insulating layer between the gate electrode and source/drain electrodes, a pad electrode including a first pad layer on a same layer as the source/drain electrodes and a second pad layer, a third insulating layer including an organic insulating material covering the source/drain electrodes and an end portion of the pad electrode, a pixel electrode including a semi-transmissive metal layer, in an opening in the third insulating layer, a cathode contact unit including a first, second, and third contact layers, a fourth insulating layer covering the end portion of the pad electrode, an organic emission layer on the pixel electrode, and an opposing electrode on the organic emission layer. | 2014-12-04 |
20140353632 | DISPLAY DEVICE - A display device includes a pixel unit including a plurality of pixels coupled to a plurality of control lines and to a plurality of power lines to commonly receive same control signals and power source, a plurality of inlet pads positioned outside the pixel unit, the plurality of inlet pads being configured to apply the power source to the plurality of power lines, a pad bar electrically coupling the plurality of inlet pads, and a plurality of coupling patterns contacting end portions of the plurality of power lines and corresponding end portions of the pad bar, the plurality of coupling patterns electrically connecting the plurality of power lines and the pad bar, and one or more of the end portions of the pad bar and the ends portions of the plurality of power lines have different contact areas with the plurality of coupling patterns. | 2014-12-04 |
20140353633 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An organic light emitting diode display includes a substrate including a thin film transistor, a plurality of pixels on a pixel area of the substrate, a plurality of auxiliary electrodes between the pixels, an opposite electrode on the pixels and on the auxiliary electrodes, the opposite electrode being electrically connected to the auxiliary electrodes, and including a same material as the auxiliary electrodes, and a power supply electrode on the substrate, the power supply electrode being in a periphery of the pixel area and being configured to supply power to the pixels. | 2014-12-04 |
20140353634 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes a thin film transistor including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer between the gate electrode and the source and drain electrodes, a third insulating layer covering the source and drain electrodes, the third insulating layer being an organic insulating layer, a pixel electrode including a semi-transparent metal layer and having an end located in a trench formed around the first insulating layer, a fourth insulating layer including an opening exposing a top surface of the pixel electrode, the fourth insulating layer being an organic insulating layer, an organic light-emitting layer on the pixel electrode, and a counter electrode on the organic light-emitting layer. | 2014-12-04 |
20140353635 | ORGANIC LIGHT-EMITTING DEVICE AND IMAGE DISPLAY SYSTEM EMPLOYING THE SAME - The disclosure provides an organic light-emitting device. The organic light-emitting device includes a substrate, and an organic light-emitting pixel array disposed on the substrate. The organic light-emitting pixel array includes a plurality of pixels. Each pixel includes a first sub-pixel and a second sub-pixel. Each sub-pixel includes a first electrode, an organic light-emitting element, a second electrode, and an optical path adjustment layer. The optical path adjustment layer is disposed between the first electrode and the second electrode. Particularly, the thickness of the optical path adjustment layer of the first sub-pixel is substantially equal to the thickness of the optical path adjustment layer of the second sub-pixel. | 2014-12-04 |
20140353636 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - A display device includes a first pixel and a second pixel. The second pixel is controlled to emit light in a predetermined range in a first time period and to not emit light in the predetermined range in a second time period during which the first pixel emits light. The first pixel includes a first organic emission layer having a first thickness and the second pixel includes a second organic emission layer having a second thickness different from the first thickness. A resonance pattern is formed in the second pixel to emit light in a melatonin production inhibition wavelength range that corresponds to the predetermined range. The first pixel may emit blue light, green light, red light, or another color of light including white light. | 2014-12-04 |
20140353637 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a display device, includes preparing a first substrate formed such that a first resin layer is formed on a first support substrate, and thereafter a display element portion and a mounting portion are formed above the first resin layer and a protection layer, which extends from an end portion of the first resin layer along the mounting portion onto the first support substrate, is disposed, preparing a second substrate formed such that a second resin layer is formed on a second support substrate, attaching the first substrate and the second substrate, and mounting a flexible printed circuit board, which is in a state in which the flexible printed circuit board is opposed to the protection layer, on the mounting portion. | 2014-12-04 |
20140353638 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a method of manufacturing a display device, includes preparing a first substrate formed such that a first resin layer is formed on a first support substrate, preparing a second substrate formed such that a second resin layer is formed on a second support substrate, attaching the first substrate and the second substrate, peeling the second support substrate from the second resin layer by radiating a first laser beam toward the second substrate, mounting a signal supply source on a first mounting portion in a state in which the second resin layer, which is opposed to the first mounting portion, is warped in a direction away from the first mounting portion, and adhering the first resin layer and the second resin layer. | 2014-12-04 |
20140353639 | DISPLAY DEVICE AND METHOD FOR PRODUCING THE SAME - A display device which can be produced at reduced material cost and has a smaller peripheral frame area, and a method for producing the same, are provided. A display device includes a first substrate including a display area, which includes an organic EL light emitting layer; a second substrate located so as to face the first substrate; a dam member located along, and outside with respect to, a part of an outer edge of the display area, the dam member joining the first substrate and the second substrate to each other; and a filler filling a space between the first substrate and the second substrate while being in contact with the dam member. | 2014-12-04 |
20140353640 | ORGANIC ELECTROLUMINESCENCE DEVICE - A heterocyclic compound wherein three five-membered rings are fused to one benzene ring and a saturated or unsaturated ring is fused to each five-membered ring. An organic electroluminescence device includes one or more organic thin film layers between an anode and a cathode. The one or more organic thin film layers include a light emitting layer. At least one layer of the one or more organic thin film layers includes the heterocyclic compound. | 2014-12-04 |
20140353641 | ORGANIC EL DISPLAY DEVICE - A circuit unit is provided in which it is possible to connect circuit board to a terminal using a simple operation without removing a passivation film from above the terminal. A metal electrode which conducts with a circuit element is formed above a substrate. Multiple column shaped insulation films are each formed at a uniform pitch in two intersecting directions above the surface of the metal electrode. A metal electrode is formed above the metal electrode including the insulation film. A passivation film is formed on a surface of the metal electrode. Conductive beads are stuck between pairs of projection structured bodies formed on a surface of the passivation film, the passivation film on a side surface of the projection structure is scraped whereby the conductive beads conduct simultaneously with the metal electrode and an electrode formed on the circuit board. | 2014-12-04 |
20140353642 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE - An organic electroluminescence display device includes a first light-emitting unit and a second light-emitting unit that are stacked between a cathode and an anode. The first light-emitting unit includes a first electron injection layer and a first light-emitting layer that are stacked. The first electron injection layer is arranged closer to the cathode side than the first light-emitting layer is. The second light-emitting unit includes a second electron injection layer and a second light-emitting layer that are stacked. The second electron injection layer is arranged closer to the cathode side than the second light-emitting layer is. Each of the first electron injection layer and the second electron injection layer includes a compound containing lithium. The number of particles of lithium is from 0.1 mmol/cm | 2014-12-04 |
20140353643 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device may include: a cell array comprising gate lines and data lines intersecting each other on a substrate so as to define a plurality of pixel areas, a plurality of thin film transistors formed at intersections between the gate lines and the data lines to correspond to the plurality of pixel areas, and a protective film evenly formed over the substrate to cover the thin film transistors; a plurality of first electrodes formed such that portions of an metal oxide layer corresponding to emission areas of the respective pixel areas, is made conductive, the metal oxide layer evenly disposed on the protective film; a bank constituting the remaining portion of the metal oxide layer in which the first electrodes are not formed and formed so as to have insulating properties; an emission layer formed over the metal oxide layer; and a second electrode formed on the emission layer so as to face the first electrodes. | 2014-12-04 |
20140353644 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes: a thin film transistor including an active layer, a gate electrode, a source electrode, a drain electrode, a first insulating layer, and a second insulating layer; a pad electrode comprising a first pad layer and a second pad layer on the first pad layer; a third insulating layer covering the source electrode and the drain electrode and an end portion of the pad electrode; a pixel electrode comprising a semi-transmissive electrically conductive layer at an opening in the third insulating layer; a protection layer between the pixel electrode and the first insulating layer; a fourth insulating layer having an opening at a location corresponding to the opening formed in the third insulating layer and covering the end portion of the pad electrode; an emission layer on the pixel electrode; and an opposing electrode on the emission layer. | 2014-12-04 |
20140353645 | OPTICAL FILM FOR REDUCING COLOR SHIFT AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE EMPLOYING THE SAME - An optical film includes: a high refractive index pattern layer including a material having a refractive index greater than 1 and having a first surface and a second surface which face each other, where a plurality of grooves is defined in the first surface, and each of the plurality of grooves is defined by a curved surface portion of the first surface of the high refractive index pattern and has a depth greater than a width thereof; and a low refractive index pattern layer including a plurality of protruding patterns disposed in the plurality of grooves, having a refractive index less than the refractive index of the high refractive index pattern layer, and including a plurality of layers having different refractive indices from each other. | 2014-12-04 |
20140353646 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING SAME - An aromatic amine derivative is represented by a formula (1-1) below. In the formula (1-1), R | 2014-12-04 |
20140353647 | Organic Thin Film Transistors And Method of Making Them - An organic thin film transistor comprises source and drain electrodes defining a channel between them; a surface-modification layer on at least part of the surface of each of the source and drain electrodes; an organic semiconductor layer extending across the channel and in contact with the surface-modification layers; a gate electrode; and a gate dielectric between the organic semiconductor layer and the gate dielectric. The surface-modification layers consist essentially of a partially fluorinated fullerene. | 2014-12-04 |
20140353648 | P-TYPE OXIDE, COMPOSITION FOR PRODUCING P-TYPE OXIDE, METHOD FOR PRODUCING P-TYPE OXIDE, SEMICONDUCTOR ELEMENT, DISPLAY ELEMENT, IMAGE DISPLAY DEVICE, AND SYSTEM - To provide is a p-type oxide, including an oxide, wherein the oxide includes: Cu; and an element M, which is selected from p-block elements, and which can be in an equilibrium state, as being present as an ion, wherein the equilibrium state is a state in which there are both a state where all of electrons of p-orbital of an outermost shell are lost, and a state where all of electrons of an outermost shell are lost, and wherein the p-type oxide is amorphous. | 2014-12-04 |
20140353649 | Organic Electronic Device - The present invention relates to an organic electronic device, comprising a first electrode, a second electrode, and a substantially organic layer comprising a compound according to formula (I) between the first and the second electrode: | 2014-12-04 |
20140353650 | MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENT AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - A compound represented by the following formula (1). | 2014-12-04 |
20140353651 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SOLID-STATE IMAGING UNIT, AND ELECTRONIC APPARATUS - A semiconductor device includes, in order on a substrate, an organic semiconductor layer, an inorganic film, and a protective film. The inorganic film and the protective film each have a peripheral edge portion that is formed in an outer region compared to a peripheral edge portion of the organic semiconductor layer. | 2014-12-04 |
20140353652 | POLYMER COMPRISING AN UNSYMMETRIC DIARYLAMINOFLUOREN UNIT - A polymer comprising one or more optionally substituted repeat units of formula (I): (I) wherein each Ar | 2014-12-04 |
20140353653 | PROCESS FOR PRODUCING LIQUID COMPOSITION FOR ORGANIC SEMICONDUCTOR ELEMENT - A problem to be solved of the present invention is to provide a liquid composition for an organic semiconductor device having good coating property, wherein the lifetime of the function of an organic semiconductor device is prolonged when an organic layer is formed from the liquid composition for an organic semiconductor device, and a process for producing the liquid composition. A mean for solving the problem is a process for producing a liquid composition for an organic semiconductor device comprising a step of dissolving an organic compound which is solid at 1 atm and 25° C. in an organic solvent which is liquid at 1 atm and 25° C. and has a halogen compound concentration of not more than 100 ppm by weight. | 2014-12-04 |
20140353654 | Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Devices - A light-emitting element which at least includes a monomolecular layer including a luminescent center material with a fluorescent light-emitting property, and a monomolecular layer including a host material with a carrier (electron or hole)-transport property and a band gap larger than a band gap (note that a band gap refers to the energy difference between a HOMO level and a LUMO level) of the luminescent center material, between a pair of electrodes, in which the monomolecular layer including the host material and the monomolecular layer including the luminescent center material share the same interface, is provided. | 2014-12-04 |
20140353655 | ORGANIC LIGHT-EMITTING DIODE LIGHTING APPARATUS - Disclosed herein is an organic light-emitting diode lighting apparatus. The organic light-emitting diode lighting apparatus may include a transparent substrate main body with a plurality of groove lines formed therein, auxiliary electrodes formed in at least of the plurality of groove lines, a first electrode formed on the substrate main body, positive temperature coefficients configured to connect the auxiliary electrodes and the first electrode, an organic emission layer formed on the first electrode, and/or a second electrode formed on the organic emission layer. | 2014-12-04 |
20140353656 | ORGANIC LED ELEMENT, TRANSLUCENT SUBSTRATE, AND METHOD FOR MANUFACTURING ORGANIC LED ELEMENT - The present invention provides an organic LED element having the significantly larger light emission area than conventional ones. The invention relates to an organic LED element, comprising: a transparent substrate; a light scattering layer; a transparent first electrode; an organic light-emitting layer; and a second electrode formed in this order, wherein the light scattering layer has a base material comprising a glass, and a plurality of scattering materials dispersed in the base material; the light scattering layer has side surfaces, and each of the side surfaces has a surface tilted at an angle larger than right angle from an upper surface on the first electrode side toward a bottom surface on the transparent substrate side; and the first electrode is placed so as to continuously cover the side surfaces. | 2014-12-04 |
20140353657 | ORGANIC EL DEVICE AND METHOD FOR MANUFACTURING ORGANIC EL DEVICE - The present invention aims at developing an organic EL device having a structure for power supply to a new organic EL element. The device is formed of unit organic EL elements planarly distributed on a substrate having a planar expanse and includes organic EL element columns and organic EL element rows. The organic EL element columns and the organic EL element rows each have a conductive path in which electric current passes in its longitudinal direction. The organic EL element columns and the organic EL element rows have different longitudinal directions so that their conductive paths cross with each other at a part where the organic EL element columns and the organic EL element rows cross with each other. | 2014-12-04 |
20140353658 | OXIDE SPUTTERING TARGET, THIN FILM TRANSISTOR USING THE SAME, AND METHOD FOR MANUFACTURING THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode, a source electrode, a drain electrode disposed on the same layer as the source electrode and facing the source electrode, an oxide semiconductor layer disposed between the gate electrode and the source electrode or the drain electrode, and a gate insulating layer disposed between the gate electrode and the source electrode or the drain electrode, in which the oxide semiconductor layer includes thallium and at least one of indium, zinc, tin, and gallium. Also an oxide sputtering target including: an oxide including thallium (Tl); and at least one of indium, zinc, tin, and gallium. | 2014-12-04 |
20140353659 | Back Plane for Flat Panel Display Device and Method of Manufacturing the Same - A method of manufacturing a flat panel display device includes forming a first gate electrode and a second gate electrode on a substrate. The method includes forming a gate insulating layer on the substrate covering the gate electrodes. The method includes forming a first active layer and a second active layer on the gate insulating layer. The method includes forming an active insulation layer on the gate insulating layer to cover the first active layer. The active insulation layer includes a first hole and a second hole exposing portions of the first active layer. The method includes forming a first source electrode and a first drain electrode on the active insulation layer respectively filling the first hole and the second hole. The method includes forming a second source electrode and a second drain electrode to contact portions of the second active layer. | 2014-12-04 |
20140353660 | FLAT PANEL DISPLAY DEVICE WITH OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A flat panel display device with an oxide thin film transistor is disclosed which includes: a buffer film formed on a substrate; an oxide semiconductor layer which has a width of a first length and is formed on the buffer film; a gate insulation film which has a width of a second length and is formed on the oxide semiconductor layer; a gate electrode which has a width of a third length and is formed on the gate insulation film; an interlayer insulation film formed on the entire surface of the substrate provided with the gate electrode; source and drain electrodes formed on the interlayer insulation film and connected to the oxide semiconductor layer; a passivation film formed on the entire surface of the substrate provided with the source and drain electrode; and a pixel electrode formed on the passivation film and connected to the drain electrode. The first length is larger than the second length and the second length is larger than the third length. | 2014-12-04 |
20140353661 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (TFT) array substrate is disclosed. The TFT array substrate includes a gate line, a first gate electrode branched from the gate line, a gate insulating film formed over the substrate, an active layer formed on the gate insulating film, a data line formed to comprise a plurality of metal layers including a first metal layer and a second metal layer formed of copper (Cu), a source electrode formed on the gate insulating film to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers, and a drain electrode formed on the gate insulating film to comprise the remaining metal layer excluding the second metal layer among the plurality of the metal layers. | 2014-12-04 |
20140353662 | High Density Nonvolatile Memory - One embodiment of a memory cell comprising: a substrate; a first transistor comprising a first gate width and a terminal; a first plurality of resistive memory elements disposed above the first transistor, each resistive memory element comprising an element width, a first end, and a second end; a plurality of parallel conductive lines disposed above the first plurality of resistive memory elements and separately electrically coupled to the first plurality of resistive memory elements at their first ends; a second plurality of resistive memory elements disposed above the plurality of parallel conductive lines, each resistive memory element comprising the element width, the first end, and the second end and separately electrically coupled to the plurality of conductive lines at their first ends; a second transistor disposed above the second plurality of resistive memory elements and comprising a gate width and a terminal, wherein the first plurality of resistive memory elements is jointly electrically coupled to the terminal of the first transistor at their second ends; wherein the second plurality of resistive memory elements is jointly electrically coupled to the terminal of the second transistor at their second ends; and wherein the gate width is substantially larger than the element width. Other embodiments are disclosed and shown. | 2014-12-04 |
20140353663 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A transistor in which the state of an interface between an oxide semiconductor layer and an insulating film in contact with the oxide semiconductor layer is favorable and a method for manufacturing the transistor are provided. Nitrogen is added to the vicinity of the interface between the oxide semiconductor layer and the insulating film (gate insulating layer) in contact with the oxide semiconductor layer so that the state of the interface of the oxide semiconductor layer becomes favorable. Specifically, the oxide semiconductor layer has a concentration gradient of nitrogen, and a region containing much nitrogen is provided at the interface with the gate insulating layer. A region having high crystallinity can be formed in the vicinity of the interface with the oxide semiconductor layer by addition of nitrogen, whereby the interface state can be stable. | 2014-12-04 |
20140353664 | SEMICONDUCTOR CHIP, SEMICONDUCTOR APPARATUS HAVING THE SAME AND METHOD OF ARRANGING THE SAME - Provided is a semiconductor apparatus in which a plurality of semiconductor chips stacked in a vertical direction. Each of the semiconductor chips comprises: a bank area comprising a plurality of banks configured to store data; and a peripheral area including a pad area in which a plurality of pads configured to receive signals for controlling the bank area and a plurality of TSV for electrically connecting the plurality of pads, respectively. | 2014-12-04 |
20140353665 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes: a semiconductor substrate; a first insulating film on a surface of the semiconductor substrate; a temperature sensing diode on the first insulating film; a trench extending inward from the surface of the semiconductor substrate; and a trench electrode embedded in the trench via a second insulating film and connected to the temperature sensing diode. | 2014-12-04 |
20140353666 | FLAT PANEL DISPLAY DEVICE AND METHOD FOR MANUFACTURING FLAT PANEL DISPLAY - A flat panel display device includes a pixel circuit provided on a substrate, a pixel wiring, an inspection pad connected to the pixel circuit through the pixel wiring, a main wiring separated from the inspection pad by a gap, and a common electrode covering substantially the entire substrate and electrically connecting the inspection pad to the main wiring. | 2014-12-04 |
20140353667 | Semiconductor Device and Manufacturing Method Therefor - A field-effect semiconductor device having a semiconductor body with a main surface is provided. The semiconductor body includes, in a vertical cross-section substantially orthogonal to the main surface, a drift layer of a first conductivity type, a semiconductor mesa of the first conductivity type adjoining the drift layer, substantially extending to the main surface and having two side walls, and two second semiconductor regions of a second conductivity type arranged next to the semiconductor mesa. Each of the two second semiconductor regions forms a pn-junction at least with the drift layer. A rectifying junction is formed at least at one of the two side walls of the mesa. Further, a method for producing a heterojunction semiconductor device is provided. | 2014-12-04 |
20140353668 | ANTI-COLORCAST DISPLAY PANEL - An anti-colorcast display panel is provided, comprising horizontal scanning lines and vertical data lines. It further includes sub-pixels disposed between adjacent scanning lines and adjacent data lines and arranged in a form of array. Every m×n sub-pixels form a pixel unit. Each sub-pixel includes a transistor whose gate is connected to the scanning line, source is connected to the data line, and drain is connected to two capacitors. The connections of the transistors in corresponding sub-pixels in each pixel unit are same. The data line will connect two adjacent sub-pixels in one row respectively when connecting the sources in the pixel unit, while the gates of the two adjacent sub-pixels are connected to the upper and lower scanning line. The extent of colorcast can be suppressed when implementing color mixing with the present invention, thus improving the color-displaying effect of the display panel, especially for the narrow-frame monitor. | 2014-12-04 |
20140353669 | FLAT PANEL DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE FLAT PANEL DISPLAY APPARATUS - A display apparatus includes an active layer that overlaps a substrate and comprises a channel region. The display apparatus further includes an insulating layer disposed on the substrate and the active layer. The display apparatus further includes a gate electrode disposed on the insulating layer, overlapping the channel region, and comprising a first gate electrode layer and a second gate electrode layer, wherein the first gate electrode layer is formed of a first material and is disposed between the insulating layer and the second electrode layer, and wherein the second gate electrode layer is formed of a second material that is different from the first material. The display apparatus further includes a contact portion disposed on the insulating layer and comprising a first contact layer that is formed of the first material. The display apparatus further includes a pixel electrode that contacts the first contact layer. | 2014-12-04 |
20140353670 | FLEXIBLE DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Discussed is a flexible display device to reduce a width of a bezel. The flexible display device includes a substrate being formed of a flexible material, a plurality of gate lines and a plurality of data lines crossing each other, a plurality of pads formed in a pad area of a non-display area, a plurality of links formed in a link area of the non-display area, a plurality of insulation films formed over the entire surface of the substrate, and a first bending hole formed in a bending area of the non-display area, the first bending hole passing through at least one of the insulation films disposed under the link, wherein the bending area is bent such that the pads are disposed on the lower surface of the substrate. | 2014-12-04 |
20140353671 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device may include a display area for displaying an image. The display device may further include a peripheral area that surrounds the display area. The display device may further include a pixel disposed in the display area. The display device may further include a bus line disposed in the peripheral area and configured to transmit a signal. The display device may further include a connection conductor set electrically connected to the bus line. The display device may further include a branch line electrically connected to the connection conductor set, configured to receive the signal from the bus line, and configured to transmit the signal to the pixel, wherein a portion of the branch line is disposed in the display area. | 2014-12-04 |
20140353672 | ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME AND DISPLAY DEVICE - An array substrate, a method for fabricating the same and a display device are disclosed. The array substrate comprises a plurality of gate lines and a plurality of data lines which intersect each other to define a plurality of pixel regions, each of the pixel regions comprises a thin film transistor and further comprises: a base substrate; more than one protrusion disposed apart from each other on the base substrate; a first electrode layer comprising at least one first electrode strip disposed in a gap between adjacent protrusions; a second electrode layer comprising at least one second electrode strip disposed on the protrusions. | 2014-12-04 |
20140353673 | SEMICONDUCTOR APPARATUS - A semiconductor apparatus includes a substrate; a first semiconductor layer formed on the substrate and formed of a nitride semiconductor; a second semiconductor layer formed on the first semiconductor layer and formed of a nitride semiconductor; first and second gate electrodes, a source electrode, and a drain electrode formed on the second semiconductor layer; an interlayer insulation film formed on the second semiconductor layer; and a field plate formed on the interlayer insulation film. Further, the first gate electrode and the second gate electrode are formed between a region where the source electrode is formed and a region where the field plate is formed, an element isolation region is formed in the first and the second semiconductor layers which are between the first and the second gate electrodes, and the second gate electrode is electrically connected to the source electrode. | 2014-12-04 |
20140353674 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a buffer layer of GaN containing at least one of Fe and C and disposed on the substrate, a channel layer of GaN disposed on the buffer layer and through which electrons travel, an electron supply layer disposed on the channel layer and producing a two-dimensional electron gas in the channel layer, a gate electrode, a drain electrode, and a source electrode. Recovery time of a drain current of the semiconductor device is no more than 5 seconds, where the recovery time is defined as the period of time after the semiconductor device is stopped from outputting high frequency power until the change in the drain current, after the stopping of the semiconductor device, reaches 95% of the change in the drain current occurring during the first 10 seconds after the stopping of the semiconductor device. | 2014-12-04 |
20140353675 | ELECTRODE, MIS SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF ELECTRODE - An electrode used in contact with an insulator comprises a layer mainly consisting of aluminum (Al) and a titanium nitride (TiN) layer that is placed between the layer mainly consisting of aluminum (Al) and the insulator and is arranged in contact with the layer mainly consisting of aluminum (Al). A ratio of thickness of the layer mainly consisting of aluminum (Al) to thickness of the titanium nitride (TiN) layer is in a range of not less than 3.00 and not greater than 12.00. | 2014-12-04 |
20140353676 | LIGHT EMITTING CHIP - A light emitting chip includes a device chip having a light emitting layer on a front surface side and a transparent member bonded to a back surface side of the device chip. The transparent member is transmissive to light emitted from the light emitting layer. The transparent member is formed into a frustum shape having a first surface, a second surface that has a smaller area than the first surface, and an inclined sidewall that connects the first surface and the second surface. | 2014-12-04 |
20140353677 | LOW-DEFECT SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a low-defect semiconductor device and a method of manufacturing the same. The method includes forming a buffer layer on a silicon substrate, forming an interface control layer on the buffer layer under a first growth condition, and forming a nitride stack on the interface control layer under a second growth condition different from the first growth condition. | 2014-12-04 |
20140353678 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes an active region formed in an upper layer portion of a semiconductor layer of a first conductivity type, and a plurality of electric field relaxation layers disposed from an edge of the active region toward the outside so as to surround the active region. The plurality of electric field relaxation layers include a plurality of first electric field relaxation layers and a plurality of second electric field relaxation layers alternately disposed adjacent to each other, the first electric field relaxation layer and the second electric field relaxation layer adjacent to each other forming a set. Impurities of a second conductivity type are implanted to the first electric field relaxation layers at a first surface density, widths of which becoming smaller as apart from the active region. Impurities of the second conductivity type are implanted to the second electric field relaxation layers at a second surface density lower than the first surface density, widths of which becoming larger as apart from the active region. | 2014-12-04 |
20140353679 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a semiconductor device and a method of fabricating the same. A light emitting diode (LED) includes a conductive substrate, and a gallium nitride (GaN)-based semiconductor stack positioned on the conductive substrate. The semiconductor stack includes an active layer that is a semi-polar semiconductor layer. Accordingly, it is possible to provide an LED having improved light emitting efficiency. | 2014-12-04 |
20140353680 | Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer - The invention provides semiconductor materials including a gallium nitride material layer formed on a silicon substrate and methods to form the semiconductor materials. The semiconductor materials include a transition layer formed between the silicon substrate and the gallium nitride material layer. The transition layer is compositionally-graded to lower stresses in the gallium nitride material layer which can result from differences in thermal expansion rates between the gallium nitride material and the substrate. The lowering of stresses in the gallium nitride material layer reduces the tendency of cracks to form. Thus, the invention enables the production of semiconductor materials including gallium nitride material layers having few or no cracks. The semiconductor materials may be used in a number of microelectronic and optical applications. | 2014-12-04 |
20140353681 | COMPOUND SEMICONDUCTOR DEVICE - The compound semiconductor device comprises an i-GaN buffer layer | 2014-12-04 |
20140353682 | Wide Band Gap Semiconductor Wafers Grown and processed in a Microgravity Environment and Method of Production - Wide band gap semiconductor wafers with previously unattainable characteristics and the method of processing and producing the same are disclosed and claimed herein. Specifically, the application discloses and claims a method to process silicon carbide and other similar wide band gap semiconductors in a microgravity environment. The wafers are placed onto stackable containment systems that create an appropriate gap between each wafer to allow for homogeneous heating and processing. The resulting wide band gap semiconductors have unique molecular structures not attainable when wide band gap semiconductors with the identical chemical composition are produced in a standard 1 gravity environment. | 2014-12-04 |
20140353683 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor substrate preparation step, a semiconductor substrate which is made of SiC and in which a first semiconductor region of a first conductivity type is formed is prepared. In a second semiconductor region forming step, a second semiconductor region is formed by implanting an impurity of a second conductivity type into a first semiconductor region through multiple ion implantation steps while varying implantation depths of the respective multiple ion implantation steps. In the second semiconductor region forming step, a dose amount of the impurity when an implantation energy of multiple ion implantation steps is the largest is smaller than a dose amount of impurity when the implantation energy is not the largest. | 2014-12-04 |
20140353684 | SILICON CARBIDE EPITAXIAL WAFER AND METHOD FOR FABRICATING THE SAME - A method for fabricating a silicon carbide epitaxial wafer according to the embodiment includes introducing a carbon source and a silicon source into a reactor in which a silicon carbide wafer is provided; heating the reactor; and adjusting an amount of the silicon source or the carbon source introduced into the reactor. A silicon carbide epitaxial wafer according to the embodiment includes a silicon carbide epitaxial layer having a surface roughness of 0.3 nm or less. | 2014-12-04 |
20140353685 | Semi-Polar III-Nitride Films and Materials and Method for Making the Same - A method has been developed to overcome deficiencies in the prior art in the properties and fabrication of semi-polar group III-nitride templates, films, and materials. A novel variant of hydride vapor phase epitaxy has been developed that provides for controlled growth of nanometer-scale periodic structures. The growth method has been utilized to grow multi-period stacks of alternating AlGaN layers of distinct compositions. The application of such periodic structures to semi-polar III-nitrides yielded superior structural and morphological properties of the material, including reduced threading dislocation density and surface roughness at the free surface of the as-grown material. Such enhancements enable to fabrication of superior quality semi-polar III-nitride electronic and optoelectronic devices, including but not limited to transistors, light emitting diodes, and laser diodes. | 2014-12-04 |
20140353686 | SEMICONDUCTOR DEVICE - A semiconductor device having a low feedback capacitance and a low switching loss. The semiconductor device includes: a substrate; a drift layer formed on a surface of the semiconductor substrate; a plurality of first well regions formed on a surface of the drift layer; a source region which is an area formed on a surface of each of the first well regions and defining, as a channel region, the surface of each of the first well regions interposed between the area and the drift layer; a gate electrode formed over the channel region and the drift layer thereacross through a gate insulating film; and second well regions buried inside the drift layer below the gate electrode and formed to be individually connected to each of the first well regions adjacent to one another. | 2014-12-04 |
20140353687 | LED MODULE AND IMAGE SENSOR MODULE - An LED module includes first through third LED chips and two Zener diodes for preventing excessive voltage application to the first and the second LED chips. A first lead includes a mount portion on which the first through third LED chips and the two Zener diodes are mounted. A resin package covers part of the first lead and includes an opening for exposing the three LED chips and two Zener diodes. A single insulating layer bonds the first and second LED chips to the first lead. A single conductive layer bonds the third LED chip and two Zener diodes to the first lead. The Zener diodes are arranged between the first, second LED chips and the third LED chip. | 2014-12-04 |
20140353688 | LIGHT SOURCE DEVICE ADAPTED TO A DIRECT-TYPE BACKLIGHT MODULE AND DISPLAY DEVICE THEREWITH - A light source device includes a frame, at least one light emitting chip, a light transferring layer and a lens layer. The at least one light emitting chip is disposed within the frame for emitting light. The light transferring layer covers the at least one light emitting chip and combines with the frame. The lens layer is formed on the frame and contacts and combines with the light transferring layer, such that the light emitted from the at least one light emitting chip directly projects into the lens layer after passing through the light transferring layer. The lens layer has a light emitting surface on a side away from the light transferring layer for transferring the light emitted from the at least one light emitting chip into a light shape after passing through the light transferring layer and the lens layer. | 2014-12-04 |
20140353689 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF AND DISPLAY COMPRISING THE SAME - Provided is a TFT with an improved gate insulator, having an insulator substrate, a gate layer, a gate insulator layer, a active semiconductor layer, and a source and drain electrode layer, wherein the gate insulator layer includes a first silicon nitride film, a second silicon nitride film disposed on the first silicon nitride film and a third silicon nitride film disposed on the second silicon nitride, and compared to the second silicon nitride film, each of the first silicon nitride film and the third silicon nitride film is much thinner and has a lower content of N—H bond. Also provided is a display including said TFTs. According to the present disclosure, an improved gate insulator layer capable of withstanding higher voltage can be achieved due to the laminated structure and accordingly a TFT with excellent reliability can be formed. | 2014-12-04 |
20140353690 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF, AND DISPLAY DEVICE - An array substrate, a manufacturing method thereof, and a display device are provided. The array substrate comprise a base substrate ( | 2014-12-04 |
20140353691 | IN-CELL OLED TOUCH DISPLAY PANEL STRUCTURE WITH METAL LAYER FOR SENSING - An in-cell OLED touch display panel structure with metal layer for sensing includes an upper substrate, a lower substrate parallel to the upper substrate, an OLED layer configured between the upper and lower substrates, a black matrix layer, a sensing electrode layer, and a thin film transistor layer. The black matrix layer is disposed at one surface of the upper substrate facing the OLED layer, and is composed of a plurality of opaque lines. The sensing electrode layer is disposed at one side of the black matrix layer facing the OLED layer, and is composed of a plurality of sensing conductor lines. The thin film transistor layer is disposed at one side of the lower substrate facing the OLED layer. The plurality of sensing conductor lines are disposed at positions corresponding to those of the plurality of opaque lines of the black matrix. | 2014-12-04 |
20140353692 | LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - A light emitting diode includes light emitting cells disposed on a substrate and interconnections connecting the light emitting cells to each other. Each of the light emitting cells includes a first semiconductor layer, a second semiconductor layer, an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a transparent electrode layer disposed on the second semiconductor layer, wherein the first and second semiconductor layers have different conductivity types. The interconnections include a common cathode commonly connecting first and second light emitting cells of the light emitting cells, the first and second light emitting cells share the first semiconductor layer, the transparent electrode layer is continuously disposed between the first and second light emitting cells, and the common cathode is electrically connected to the first and second light emitting cells through the transparent electrode layer. | 2014-12-04 |
20140353693 | DISPLAY PANEL DRIVEN BY ELECTRODE WIRES - A display panel is provided. The present display panel includes a substrate, a plurality of first electrode wires, a plurality of second electrode wires and a plurality of light-emitting layers, wherein the first electrode wires are disposed on the substrate; the second electrode lines are cross with the first electrode wires and on the first electrode wires; the light-emitting layers are sandwiched between the first electrode wires and the second electrode wires, and are electrically connected to the first electrode wires and the second electrode wires. Thus, the present invention provides a display panel utilizing ultra-fine metal wires as the electrodes, and achieves fine transmittance, high conductivity and facilitating the implementation of the various flexible displays. | 2014-12-04 |
20140353694 | MULTIPLE PIXEL SURFACE MOUNT DEVICE PACKAGE - Emitter packages and LEDs displays utilizing the packages are disclosed, with the packages providing advantages such as reducing the cost and interconnect complexity for the packages and displays. One emitter package comprises a casing with a plurality of cavities, each cavity having at least one LED. A lead frame structure is included integral to the casing, with the at least one LED from each of the cavities mounted to the lead frame structure. The package is capable of receiving electrical signals for independently controlling the emission from a first and second of the cavities. One LED display utilizes the LED packages mounted in relation to one another to generate a message or image. The LED packages comprise multiple pixels each having at least one LED, with each package capable of receiving electrical signals for independently controlling the emission of at least a first and second of the pixels. | 2014-12-04 |
20140353695 | LIGHT EMITTING DEVICE PACKAGE AND LIGHTING APPARATUS USING THE SAME - Disclosed is a light emitting device, and more particularly are a light emitting device package configured to improve the quality of light and a lighting apparatus using the same. The light emitting device package includes a light emitting device located on a package main body, the light emitting device including a first light emitting device configured to emit light having a first wavelength band and a second light emitting device configured to emit light having a second wavelength band, a lens disposed over the light emitting device, and a wavelength conversion layer disposed over the lens, the wavelength conversion layer serving to absorb light having the first wavelength band or the second wavelength band so as to emit light having a third wavelength band. | 2014-12-04 |
20140353696 | Solid State Lighting Device - A solid state lighting device includes a first solid state light-emitting element configured to emit first light having a first light emission spectrum having width smaller than 5 nm in a visible light wavelength region; a second solid state light-emitting element configured to emit second light having a second light emission spectrum having width smaller than 5 nm and a peak wavelength larger than a peak wavelength of the first light by 5 nm or more in the visible light wavelength region, and a plurality of first light-emitting elements for wavelength complement configured to respectively emit lights having light emission spectra having width smaller than 5 nm. A third light emission spectrum of third light, which is a set of the lights from the plurality of first light-emitting elements for complement, complements a region between the first light emission spectrum and the second light emission spectrum. | 2014-12-04 |
20140353697 | LED MODULE AND LED DOT MATRIX DISPLAY - An LED module A | 2014-12-04 |
20140353698 | HETEROJUNCTION LIGHT EMITTING DIODE - A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first contact is deposited on the first doped layer. The monocrystalline substrate is removed from the emissive layer by a mechanical process. A second doped layer is formed on the emissive layer on a side from which the substrate has been removed. The second doped layer has a dopant conductivity opposite that of the first doped layer. A second contact is deposited on the second doped layer. | 2014-12-04 |
20140353699 | NITRIDE SEMICONDUCTOR LIGHT-EMITTING DIODE - Provided is a nitride semiconductor light-emitting diode having a higher light extraction efficiency and a higher polarization degree. A nitride semiconductor light-emitting diode according to the present invention comprises an active layer generating a polarized light, a first side surface, a second side surface, a third side surface, and a fourth side surface. The first and second side surfaces consist only of a plane including the Z-axis and the Y-axis. The third and fourth side surfaces are perpendicular to the first and second side surfaces and include the X-axis. The third and fourth side surfaces include an inclined surface. | 2014-12-04 |
20140353700 | HETEROJUNCTION LIGHT EMITTING DIODE - A method for forming a light emitting device includes forming a monocrystalline III-V emissive layer on a monocrystalline substrate and forming a first doped layer on the emissive layer. A first contact is deposited on the first doped layer. The monocrystalline substrate is removed from the emissive layer by a mechanical process. A second doped layer is formed on the emissive layer on a side from which the substrate has been removed. The second doped layer has a dopant conductivity opposite that of the first doped layer. A second contact is deposited on the second doped layer. | 2014-12-04 |
20140353701 | LIGHT SOURCE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A package for a light source is disclosed. In particular, a Plastic Leaded Chip Carrier (PLCC) is described which provides enhanced heat dissipating properties. Moreover, the PLCC is described as comprising a single-gage leadframe, which provides for enhanced design flexibility and reduced manufacturing costs. Methods of manufacturing light source packages are also disclosed. | 2014-12-04 |
20140353702 | WAVELENGTH CONVERSION ELEMENT, LIGHT EMITTING DEVICE INCLUDING WAVELENGTH CONVERSION ELEMENT, AND VEHICLE INCLUDING LIGHT EMITTING DEVICE - A wavelength conversion element includes a phosphor layer including phosphor particles configured to be excited by light from a light source and a matrix located among the phosphor particles; and a column-shaped structural body including at least two kinds of column-shaped bodies periodically arranged and in contact with the phosphor layer. The column-shaped bodies have different heights and/or different thicknesses. The column-shaped structural body is a photonic crystal. | 2014-12-04 |
20140353703 | LIGHT EMITTING DEVICE PACKAGE - Disclosed is a light emitting device package including a body including a recess, first and second electrodes disposed on the body, a light emitting device provided on the first electrode, and a molding part disposed on the light emitting device. At least one of the body and the molding part includes benzotriazol (BTA). | 2014-12-04 |
20140353704 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a semiconductor light emitting element including a transparent substrate; a reflective substrate on which the semiconductor light emitting element is mounted; an adhesive layer containing a fluorescent substance, for fixing the semiconductor light emitting element on the reflective substrate; and a sealing member containing a fluorescent substance, for sealing the semiconductor light emitting element. In the semiconductor light emitting device, the adhesive layer has a thickness equal to or smaller than average particle size of the fluorescent substance contained in the sealing member. | 2014-12-04 |
20140353705 | SEMICONDUCTOR LIGHT EMITTING ELEMENT, METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT, SEMICONDUCTOR LIGHT EMITTING DEVICE AND SUBSTRATE - A semiconductor light emitting element includes a transparent substrate that transmits light emitted from said semiconductor light emitting element and a multi-layered structure formed on the transparent substrate. The multi-layered structure includes a semiconductor multi-layered film consisting of an n-type layer, an MQW light emitting layer and a p-type layer. The transparent substrate includes a light scattering structure formed in the transparent substrate for scattering the light that entered the substrate. | 2014-12-04 |
20140353706 | SILVER SURFACE TREATMENT AGENT, AND LIGHT-EMITTING DEVICE - The silver surface treatment agent of the present invention contains a layered silicate compound. The light-emitting device of the present invention comprises a substrate having a silver-plated layer; a light-emitting diode mounted on the substrate; and a film, provided on a surface of the silver-plated layer, containing a layered silicate compound. | 2014-12-04 |
20140353707 | TRANSPARENT LIGHT EMITTING DIODES - A transparent light emitting diode (LED) includes a plurality of III-nitride layers, including an active region that emits light, wherein all of the layers except for the active region are transparent for an emission wavelength of the light, such that the light is extracted effectively through all of the layers and in multiple directions through the layers. Moreover, the surface of one or more of the III-nitride layers may be roughened, textured, patterned or shaped to enhance light extraction. | 2014-12-04 |
20140353708 | WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - A light emitting diode (LED) package includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first and second semiconductor layers, the first and second semiconductor layers having different conductivity types, a first contact layer disposed on the first semiconductor layer, a second contact layer disposed on the second semiconductor layer, a first insulation layer contacting the first contact layer, a second insulation layer disposed on the first insulation layer, a first bump disposed on a first side of the semiconductor stack, the first bump being electrically connected to the first contact layer, a second bump disposed on the first side of the semiconductor stack, the second bump being electrically connected to the second contact layer, and a third insulation layer disposed on side surfaces of the first bump and the second bump. | 2014-12-04 |
20140353709 | LIGHT EMITTING DIODE - Embodiments of the invention provide a gallium nitride-based light emitting diode including a transparent electrode, which includes a metal layer and a metal oxide layer. The light emitting diode includes a substrate, an n-type gallium nitride-based semiconductor layer disposed on the substrate, a p-type gallium nitride-based semiconductor layer disposed on the n-type gallium nitride-based semiconductor layer, an active layer interposed between the n-type gallium nitride-based semiconductor layer and the p-type gallium nitride-based semiconductor layer, and a transparent electrode disposed on the p-type gallium nitride-based semiconductor layer. Here, the transparent electrode has a multilayer structure including a first metal layer and a metal oxide layer sequentially stacked one above another, and impedance of the metal oxide layer matches impedance of an external environment at an interface between the metal oxide layer and the external environment. | 2014-12-04 |
20140353710 | Method for Producing Optoelectronic Semiconductor Components, Leadframe Assemblage and Optoelectronic Semiconductor Component - A method serves to produce optoelectronic semiconductor components. A leadframe assemblage includes a number of leadframes. The leadframes each comprise at least two leadframe parts and are connected together at least in part via connecting webs. Electrical connections are attached between neighboring leadframes. A potting body connects the leadframes and the leadframe parts mechanically together. At least some of the connecting webs are removed and/or interrupted, the resulting structure is singulated into the semiconductor components. | 2014-12-04 |
20140353711 | OPTICAL SEMICONDUCTOR LIGHTING APPARATUS - An optical semiconductor lighting apparatus includes a housing including a groove, a light-emitting module disposed in the housing, the light-emitting module including a semiconductor optical device, a sealing body disposed in the groove, the sealing body including a main portion and a first rib extending from the main portion, and an optical cover disposed on the housing and covering the groove and the light-emitting module, wherein a first open space is disposed between the optical cover, the first rib, the main portion of the sealing body, and a side surface of the groove. | 2014-12-04 |
20140353712 | NANOPILLAR OPTICAL RESONATOR - Embodiments of a monolithically integrated optical resonator are disclosed. In one embodiment, the optical resonator is a nanopillar optical resonator that is formed directly on a substrate and promotes a helically-propagating cavity mode. The helically-propagating cavity mode results in significant reflection or, in some embodiments, total internal reflection at an interface of the nanopillar optical resonator and the substrate even if refractive indices of the nanopillar optical resonator and the substrate are the same or similar. As a result, strong optical feedback, and thus strong resonance, is provided in the nanopillar optical resonator. | 2014-12-04 |
20140353713 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a substrate, a first insulation layer formed on the substrate in a first region, a photon absorption seed layer formed on the first insulation layer in the first region and on the substrate in a second region separate from the first region, and a photon absorption layer formed on the photon absorption seed layer in the first region. The photon absorption seed layer has a particular structure that may assist in reducing dislocation density in a region that includes a photon absorption layer. | 2014-12-04 |
20140353714 | METHODS FOR MAKING A SEMICONDUCTOR DEVICE WITH SHAPED SOURCE AND DRAIN RECESSES AND RELATED DEVICES - A method for making a semiconductor device includes forming at least one gate stack on a layer comprising a first semiconductor material and etching source and drain recesses adjacent the at least one gate stack. The method further includes shaping the source and drain recesses to have a vertical side extending upwardly from a bottom to an inclined extension adjacent the at least one gate stack. | 2014-12-04 |
20140353715 | FINFET DEVICE AND FABRICATION METHOD THEREOF - A transistor device may include a substrate that has a well portion. The transistor device may further include a source member and a drain member. The transistor device may further include a fin bar. The fin bar may be formed of a first semiconductor material, may be disposed between the source member and the drain member, and may overlap the well portion. The transistor device may further include a fin layer. The fin layer may be formed of a second semiconductor material, may be disposed between the source member and the drain member, and may contact the fin bar. | 2014-12-04 |
20140353716 | METHOD OF MAKING A SEMICONDUCTOR DEVICE USING A DUMMY GATE - A method of making a semiconductor device includes forming a fin mask layer on a semiconductor layer, forming a dummy gate over the fin mask layer, and forming source and drain regions on opposite sides of the dummy gate. The dummy gate is removed and the underlying fin mask layer is used to define a plurality of fins in the semiconductor layer. A gate is formed over the plurality of fins. | 2014-12-04 |
20140353717 | SILICON-ON-NOTHING TRANSISTOR SEMICONDUCTOR STRUCTURE WITH CHANNEL EPITAXIAL SILICON REGION - An improved transistor with channel epitaxial silicon. In one aspect, a method of fabrication includes: forming a gate stack structure on an epitaxial silicon region disposed on a substrate, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; and growing a raised epitaxial source and drain from the substrate, the raised epitaxial source and drain in contact with the epitaxial silicon region and the gate stack structure. For a SRAM device, further: removing an epitaxial layer in contact with the silicon substrate and the raised source and drain and to which the epitaxial silicon region is coupled leaving a space above the silicon substrate and under the raised epitaxial source and drain; and filling the space with an insulating layer and isolating the raised epitaxial source and drain and a channel of the transistor from the silicon substrate. | 2014-12-04 |
20140353718 | SILICON-ON-NOTHING TRANSISTOR SEMICONDUCTOR STRUCTURE WITH CHANNEL EPITAXIAL SILICON-GERMANIUM REGION - An improved transistor with channel epitaxial silicon and methods for fabrication thereof. In one aspect, a method for fabricating a transistor includes: forming a gate stack structure on an epitaxial silicon region, a width dimension of the epitaxial silicon region approximating a width dimension of the gate stack structure; encapsulating the epitaxial silicon region under the gate stack structure with sacrificial spacers formed on both sides of the gate stack structure and the epitaxial silicon region; forming a channel of the transistor having a width dimension that approximates that of the epitaxial silicon region and the gate stack structure, the epitaxial silicon region and the gate stack structure formed on the channel of the transistor; removing the sacrificial spacers; and growing a raised epitaxial source and drain from the silicon substrate, with portions of the raised epitaxial source and drain in contact with the epitaxial silicon region. | 2014-12-04 |
20140353719 | Semiconductor Devices and Fabricating Methods Thereof - Provided are semiconductor devices and fabricating methods thereof. The semiconductor device includes a field insulating layer formed in a substrate, an interlayer dielectric layer formed on the field insulating layer and including a trench exposing at least a portion of the field insulating layer, a deposition insulating layer formed in the trench to be disposed on the field insulating layer, a gate insulating layer formed the trench to be disposed on the deposition insulating layer, and a metal gate formed the trench on the gate insulating layer. | 2014-12-04 |
20140353720 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a semiconductor device having improved characteristics. The semiconductor device has a substrate and thereon a buffer layer, a channel layer, a barrier layer, a trench penetrating therethrough and reaching the inside of the channel layer, a gate electrode placed in the trench via a gate insulating film, and drain and source electrodes on the barrier layer on both sides of the gate electrode. The gate insulating film has a first portion made of a first insulating film and extending from the end portion of the trench to the side of the drain electrode and a second portion made of first and second insulating films and placed on the side of the drain electrode relative to the first portion. The on resistance can be reduced by decreasing the thickness of the first portion at the end portion of the trench on the side of the drain electrode. | 2014-12-04 |
20140353721 | BULK FINFET WITH CONTROLLED FIN HEIGHT AND HIGH-K LINER - A method of forming a semiconductor device that includes forming a material stack on a semiconductor substrate, the material stack including a first dielectric layer on the substrate, a second dielectric layer on the first dielectric layer, and a third dielectric layer on the second dielectric layer, wherein the second dielectric layer is a high-k dielectric. Openings are formed through the material stack to expose a surface of the semiconductor substrate. A semiconductor material is formed in the openings through the material stack. The first dielectric layer is removed selectively to the second dielectric layer and the semiconductor material. A gate structure is formed on a channel portion of the semiconductor material. In some embodiments, the method may provide a plurality of finFET or trigate semiconductor device in which the fin structures of those devices have substantially the same height. | 2014-12-04 |
20140353722 | GRAPHENE CAPPED HEMT DEVICE - A graphene capped HEMT device and a method of fabricating same are disclosed. The graphene capped HEMT device includes one or more graphene caps that enhance device performance and/or reliability of an exemplary AlGaN/GaN heterostructure transistor used in high-frequency, high-energy applications, e.g., wireless telecommunications. The HEMT device disclosed makes use of the extraordinary material properties of graphene. One of the graphene caps acts as a heat sink underneath the transistor, while the other graphene cap stabilizes the source, drain, and gate regions of the transistor to prevent cracking during high-power operation. A process flow is disclosed for replacing a three-layer film stack, previously used to prevent cracking, with a one-atom thick layer of graphene, without otherwise degrading device performance. In addition, the HEMT device disclosed includes a hexagonal boron nitride adhesion layer to facilitate deposition of the compound nitride semiconductors onto the graphene. | 2014-12-04 |
20140353723 | High Voltage Durability III-Nitride Device - A high voltage durability III-nitride semiconductor device comprises a support substrate including a first silicon body, an insulator body over the first silicon body, and a second silicon body over the insulator body. The high voltage durability III-nitride semiconductor device further comprises a III-nitride semiconductor body characterized by a majority charge carrier conductivity type, formed over the second silicon body. The second silicon body has a conductivity type opposite the majority charge carrier conductivity type. In one embodiment, the high voltage durability III-nitride semiconductor device is a high electron mobility transistor (HEMT) comprising a support substrate including a <100> silicon layer, an insulator layer over the <100> silicon layer, and a P type conductivity <111> silicon layer over the insulator layer. The high voltage durability HEMT also comprises a III-nitride semiconductor body formed over the P type conductivity <111> silicon layer, the III-nitride semiconductor body forming a heterojunction of the HEMT. | 2014-12-04 |
20140353724 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: a semiconductor substrate having an upper surface and a lower surface; a field effect transistor having a semiconductor layer on the upper surface of the semiconductor substrate, a gate electrode, a drain electrode, and a source electrode; a P-type diffusion region in the semiconductor substrate and extending to the upper surface of the semiconductor substrate; a first N-type diffusion region in the semiconductor substrate and extending t the upper surface of the semiconductor substrate; a first connection electrode connecting the P-type diffusion region to a grounding point; and a second connection electrode connecting the first N-type diffusion region to the gate electrode or the drain electrode. The P-type diffusion region and the first N-type diffusion region constitute a bidirectional lateral diode. | 2014-12-04 |