49th week of 2008 patent applcation highlights part 14 |
Patent application number | Title | Published |
20080296512 | PORTABLE ELECTRONIC DEVICE HAVING APPEARANCE CUSTOMIZABLE HOUSING - A portable electronic device ( | 2008-12-04 |
20080296513 | Integrating ultraviolet exposure detection devices - Devices or formulations incorporating photochromic agents and methods of using them are provided. The compositions are useful in connection with personal care, light and/or ultraviolet radiation detection, imaging and printing applications. | 2008-12-04 |
20080296514 | SYSTEM AND METHOD FOR NONINVASIVELY MONITORING CONDITIONS OF A SUBJECT - A method and system are presented for use in determining one or more parameters of a subject. A region of interest of the subject is irradiated with acoustic tagging radiation, which comprises at least one acoustic tagging beam. At least a portion of the region of interest is irradiated with at least one electromagnetic beam of a predetermined frequency range. Electromagnetic radiation response of the at least portion of the region of interest is detected and measured data indicative thereof is generated. The detected response comprises electromagnetic radiation tagged by the acoustic radiation. This enables processing of the measured data indicative of the detected electromagnetic radiation response to determine at least one parameter of the subject in a region corresponding to the locations in the medium at which the electromagnetic radiation has been tagged by the acoustic radiation, and outputting data indicative of the at least one determined parameter. | 2008-12-04 |
20080296515 | CHARGED PARTICLE BEAM WRITING APPARATUS AND METHOD - A charged particle beam writing apparatus includes a stage on which a target object is placed and which moves in a predetermined direction, a first column configured to irradiate a first charged particle beam on a writing region of the target object, a second column which is located at the back of the first column in the predetermined direction and configured to irradiate a second charged particle beam on the writing region of the target object, and a sensor configured to measure a height level of the target object at any one of a position in front of a position where the first column irradiates the first charged particle beam in the predetermined direction and a position almost immediately under the position where the first charged particle beam is irradiated. | 2008-12-04 |
20080296516 | METHOD AND APPARATUS FOR SPECIMEN FABRICATION - A specimen fabrication apparatus, including: an ion beam irradiating optical system to irradiate a sample placed in a chamber with an ion beam; a specimen holder to mount a specimen separated by the irradiation with the ion beam; a holder cassette to hold the specimen holder; a sample stage to hold, the sample and the holder cassette; and a probe to move the specimen to the specimen holder, wherein the holder cassette is transferred to outside of the chamber in a condition of holding the specimen holder with the specimen mounted. | 2008-12-04 |
20080296517 | Coupling light of light emitting resonator to waveguide - A waveguide conduit is constructed and adapted to capture the light emitted by the at least one nano-resonant structure. The nano-resonant structure emits light in response to excitation by a beam of charged particles, The source of charged particles may be an ion gun, a thermionic filament, a tungsten filament, a cathode, a field-emission cathode, a planar vacuum triode, an electron-impact ionizer, a laser ionizer, a chemical ionizer, a thermal ionizer, or an ion-impact ionizer. | 2008-12-04 |
20080296518 | X-Ray Window with Grid Structure - A high strength window for a radiation detection system includes a plurality of intersecting ribs defining a grid having openings therein with tops of the ribs terminate substantially in a common plane. The intersecting ribs are oriented non-perpendicularly with respect to each other and define non-rectangular openings. The window also includes a support frame around a perimeter of the plurality of intersecting ribs, and a film disposed over and spanning the plurality of intersecting ribs and openings. The film is configured to pass radiation therethrough. An associated radiation detection system includes a sensor disposed behind the window. The sensor is configured to detect radiation passing through the high strength window. | 2008-12-04 |
20080296519 | Apparatus and Method for Absorption of Incident Gamma Radiation and its Conversion to Outgoing Radiation at Less Penetrating, Lower Energies and Frequencies - Gamma radiation ( | 2008-12-04 |
20080296520 | OPTICAL COUPLING DEVICE - In one aspect of the present invention, an optical coupling may include a supporting member which has a first surface, a second surface on the opposite side of the first surface, and an opening portion, and which is formed of an insulating material, a first wiring layer provided on the first surface of the supporting member, a second wiring layer provided on the second surface of the supporting member, a light emitting element which is provided on the first surface, and which is connected to the first wiring layer, and at least one portion of which faces the opening portion, a light receiving element which is provided on the second surface, and which is connected to the second wiring layer, and which faces the light emitting element through the opening portion, a light shielding resin provided so as to cover the light emitting element, the light receiving element, and the first wiring layer and the second wiring layer. | 2008-12-04 |
20080296521 | METHOD AND SYSTEM FOR REDUCING OR ELIMINATING UNCONTROLLED MOTION IN A MOTION CONTROL SYSTEM - A method and system for reducing or eliminating uncontrolled motion in a motion control system is disclosed herein. The method includes defining at least one closed motion control loop. The motion control loop comprises a plurality of feedback control loops. The method further includes detecting a faulty feedback control loop from among the plurality of feedback control loops based on a faulty feedback signal. Once the faulty feedback signal is detected, the faulty feedback signal in the faulty feedback control loop is swapped to an operative feedback signal while the motion control loop is active. In an embodiment the motion control loop includes a velocity feedback control loop and a position feedback control loop. | 2008-12-04 |
20080296522 | RELIEF PRESSURE SWITCHING APPARATUS FOR HYDRAULIC WORKING MACHINE - In a relief pressure switching apparatus for hydraulic working machine for switching a relief pressure of a hydraulic actuator circuit in accordance with a specification of a compression crushing apparatus or a breaker to be installed, electromagnetically variable relief valves for determining the relief pressure are provided, and a controller commands the relief pressure selected by an operator from a plurality of relief pressures preliminarily set and stored in combination with a flow rate as matching a working apparatus to the relief valves. | 2008-12-04 |
20080296523 | LOW-POWER PIEZOELECTRIC MICRO-MACHINED VALVE - A piezoelectric microvalve employs a valve element formed of hermetically sealed and opposed plates flexed together by a cross axis piezoelectric element. Large flow modulation with small piezoelectric actuator displacement is obtained by perimeter augmentation of the valve seat which dramatically increases the change in valve flow area for small deflections. | 2008-12-04 |
20080296524 | Control Valve for a Refrigerant Compressor and Refrigerant Compressor - A refrigerant compressor has a control valve for controlling the degree of conveyance of the refrigerant compressor by setting a drive housing pressure p | 2008-12-04 |
20080296525 | Valve with Operating Means Between Two Outlet Passages - A valve has a body, a fluid inlet duct delimited by the body, two fluid outlet ducts into which the fluid inlet duct opens, an intersection formed by the two fluid outlet ducts, a butterfly valve disposed in the intersection, and a motor, to which the butterfly valve is connected, for actuating the butterfly valve between a first extreme position in which the butterfly valve directs the fluid mainly toward the first outlet duct and a second extreme position in which the butterfly valve directs the fluid mainly toward the second outlet duct. The motor is placed between the outlet ducts in the vicinity of a connecting zone connecting the two outlet ducts to one another. The butterfly valve is mounted in front of the connecting zone so that the butterfly valve forms a screen against the fluid for the connecting zone. | 2008-12-04 |
20080296526 | Damping valve for a vibration damper - A damping valve for a vibration damper includes a guide sleeve which slides on the piston rod of a vibration damper. An annular damping valve body which is provided with at least one through-opening is fixed axially by positive engagement on the guide sleeve, and the through-opening is covered at least partly by at least one valve disk which is biased by at least one closing spring which is supported at its end at a spring plate connected to the guide sleeve. The damping valve body and a spring plate which is constructed separate from the guide sleeve form a compression chain between two axially spaced stops of the guide sleeve. | 2008-12-04 |
20080296527 | UV CROSS-LINKED POLYMER FUNCTIONALIZED MOLECULAR SIEVE/POLYMER MIXED MATRIX MEMBRANES - The present invention discloses high performance UV cross-linked polymer functionalized molecular sieve/polymer mixed matrix membranes (MMMs) with either no macrovoids or voids of less than several angstroms at the interface of the polymer matrix and the molecular sieves. These UV cross-linked MMMs were prepared by incorporating polyethersulfone (PES) functionalized molecular sieves such as AlPO-14 and UZM-25 small pore microporous molecular sieves into a continuous UV cross-linkable polyimide polymer matrix followed by UV cross-linking. The UV cross-linked MMMs in the form of symmetric dense film, asymmetric flat sheet membrane, or asymmetric hollow fiber membranes have good flexibility, high mechanical strength, and exhibit significantly enhanced selectivity and permeability over polymer membranes made from corresponding continuous polyimide polymer matrices for carbon dioxide/methane and hydrogen/methane separations. The MMMs of the present invention are suitable for a variety of liquid, gas, and vapor separations. | 2008-12-04 |
20080296528 | MULTILAYER INDUCTOR COMPONENT - A multilayer inductor component has a multilayer part having a plurality of magnetic layers laminated therein and a conductor part arranged within the multilayer part. The magnetic layers are formed from a ferrite material and an additive. The ferrite material contains Fe | 2008-12-04 |
20080296529 | Piezoelectric thin film, piezoelectric material, and fabrication method of piezoelectric thin film and piezoelectric material, and piezoelectric resonator, actuator element, and physical sensor using piezoelectric thin film - A piezoelectric thin film of the present invention includes an aluminum nitride thin film that contains scandium. A content ratio of scandium in the aluminum nitride thin film is 0.5 atom % to 50 atom % on the assumption that a total amount of the number of scandium atoms and the number of aluminum atoms is 100 atom %. According to this arrangement, the piezoelectric thin film of the present invention can improve a piezoelectric response while keeping characteristics of elastic wave propagation speed, Q value, and frequency-temperature coefficient that the aluminum nitride thin film has. | 2008-12-04 |
20080296530 | Nanostructured magnetorheological fluids and gels - Magnetorheological materials having a supramolecular polymer gel as a component of the carrier are disclosed. Useful supramolecular polymers for gels include those having bipyridine or terpyridine ligands which can participate in metal coordination bonding. The magnetizable particles of magnetorheological materials can have supramolecular surfactant-polymer coatings. | 2008-12-04 |
20080296531 | IONIC LIQUIDS - The invention relates to an ionic liquid composition and a method for preparing the ionic liquid. The ionic liquid comprises a cation containing the Formula I, as herein disclosed, and wherein: n is 1 or 2, R | 2008-12-04 |
20080296532 | Low Adhesion Material, Resin Molding Die, and Soil Resistant Material - A resin molding die has a molding surface formed of a low adhesion material formed of a solid solution of La—Y | 2008-12-04 |
20080296533 | BARIUM THIOALUMINATE PHOSPHOR MATERIALS WITH NOVEL CRYSTAL STRUCTURES - The present invention provides thioaluminate phosphor compounds BaAl | 2008-12-04 |
20080296534 | Core-Alloyed Shell Semiconductor Nanocrystals - The invention relates to a core-alloyed shell semiconductor nanocrystal comprising: (i) a core of a semiconductor material having a selected band gap energy; (ii) a core-overcoating shell consisting of one or more layers comprised of an alloy of the said semiconductor of (i) and a second semiconductor; (iii) and an outer organic ligand layer, provided that the core semiconductor material is not HgTe. Preferably, the core semiconductor material is PbSe and the alloy shell semiconductor material has the PbSexS1-x structure. | 2008-12-04 |
20080296535 | Structured catalyst for POX reforming of gasoline for fuel-cell powered vehicles applications and a method of preparing the same - The present invention relates to a structured catalyst for reforming of gasoline and a method of preparing the same, more particularly to a structured catalyst for reforming of gasoline for fuel-cell powered vehicles prepared by wash-coating the transition metal based reforming catalyst on the surface of the ceramic honeycomb support wash-coated with sub-micron sized alumina or its precursor to sufficiently increase the effective surface area and the performance of the catalyst and a method of preparing the same. | 2008-12-04 |
20080296536 | WATER DISPERSIBLE POLYTHIOPHENES MADE WITH POLYMERIC ACID COLLOIDS - Compositions are provided comprising a continuous liquid aqueous medium having dispersed therein a polydioxythiophene and at least one colloid-forming fluorinated polymeric acid. Films from invention compositions are useful as buffer layers in organic electronic devices, including electroluminescent devices, such as, for example, organic light emitting diodes (OLED) displays. | 2008-12-04 |
20080296537 | Gas-phase functionalization of carbon nanotubes - In a method for functionalizing a carbon nanotube surface, the nanotube surface is exposed to at least one vapor including at least one functionalization species that non-covalently bonds to the nanotube surface, providing chemically functional groups at the nanotube surface, producing a functionalized nanotube surface. A functionalized nanotube surface can be exposed to at least one vapor stabilization species that reacts with the functionalization layer to form a stabilization layer that stabilizes the functionalization layer against desorption from the nanotube surface while providing chemically functional groups at the nanotube surface, producing a stabilized nanotube surface. The stabilized nanotube surface can be exposed to at least one material layer precursor species that deposits a material layer on the stabilized nanotube surface. | 2008-12-04 |
20080296538 | Carbon nanotube and method of visualizing carbon nanotube - A carbon nanotube is described, to which quantum dots are attached through non-covalent bonding via linking molecules bonded to the quantum dots. A method of visualizing a carbon nanotube is also described, wherein quantum dots are attached to the carbon nanotube through non-covalent bonding via linking molecules bonded to the quantum dots, and then the quantum dots are made emit light. This invention allows carbon nanotubes, even those in a wet condition, to be visualized by a simple fluorescent optical microscope. Thereby, the difficulties on preparing specimens and the need of sophisticated instruments can be reduced. This invention also exhibits great potential for the application of carbon nanotubes under a wet condition. | 2008-12-04 |
20080296539 | METHOD OF MODIFYING CARBON NANOTUBE USING RADICAL INITIATOR, AND DISPERSION LIQUID AND ELECTRODE COMPRISING THE CARBON NANOTUBE MODIFIED BY USING THE METHOD - Provided is a method of modifying carbon nanotubes, the method including: preparing a mixed solution in which a radical initiator and a carbon nanotube are dispersed; applying energy to the mixed solution to decompose the radical initiator into a radical; and reacting the decomposed radical with a surface of the carbon nanotube, wherein the radical which has reacted with the carbon nanotube is detached from the carbon nanotube after the reaction with the carbon nanotube. In the method of modifying carbon nanotube, a radical is reacted with a carbon nanotube and then separated from the carbon nanotube to thus modify the surface of the carbon nanotube without chemical bonding. Accordingly, the conductivity of the carbon nanotube can be increased. | 2008-12-04 |
20080296540 | METALLIC PARTICLES FOR ELECTROKINETIC OR ELECTROSTATIC DEPOSITION - Metallic particles for electrokinetic or electrostatic deposition, and a method for making such particles, comprising metallic particle bodies, an organic acid film on the particle bodies, and a charge director adhered to the organic acid film. | 2008-12-04 |
20080296541 | CHEMICALLY BONDED CERAMIC RADIATION SHIELDING MATERIAL AND METHOD OF PREPARATION - A composition of matter and method of forming a radiation shielding member at ambient temperatures in which the composition of matter includes a ‘cold-fired’ chemically bonded oxide-phosphate ceramic cement matrix; with one or more suitably prepared and distributed radiation shielding materials dispersed in the ‘cold-fired’ chemically bonded oxide-phosphate ceramic cement matrix. | 2008-12-04 |
20080296542 | PORTABLE VEHICLE LIFT - A portable lift including a pair of elongate rails adapted for being located underneath corresponding lift points associated with a vehicle to be elevated. A pair of cross members fixedly securing at opposite ends to spaced apart locations associated with the rails and in order to construct a frame. Scissor jacks are associated with end location of the first and second rails. A drive shaft communicates to one or more of the scissor jacks, and responsive to a converted rotary input, actuates the jacks, separately or in unison, thereby causing the rails to vertically displaced for elevating and/or lowering the vehicle. | 2008-12-04 |
20080296543 | WIRE DEFLECTION GUIDE - A wire deflection guide includes a curved surface that deflects a wire out of an electrical box. The guide is held in place within an electrical box by a suitable means such as a channel or protrusion at one end of the guide that rests against a bottom lip of the electrical box. An opposite end of the guide rests against a back wall of the electrical box. The guide allows wire to be pushed through conduit and out of the electrical box without an operator being proximate the box. | 2008-12-04 |
20080296544 | Elevator Load Bearing Assembly Having A Jacket With Multiple Polymer Compositions - An elevator load bearing assembly ( | 2008-12-04 |
20080296545 | Solar illuminated fence - A fence assembly having a plurality of illuminable fence posts disposed between a plurality of fence sections. One or more connectors may be disposed on the fence post and/or the fence section to attach the components together. The fence post may include a illuminable top removably attached to a upright support member. The illuminable top may comprise a light source and a solar power source electrically connected thereto. The solar power source may be comprised of a battery and a solar cell such that the solar power source stores energy when exposed to light and provides energy to the light source when exposed to darkness in order to illuminate the area surrounding the fence assembly. | 2008-12-04 |
20080296546 | CABLE FOR USE IN SAFETY BARRIER - A cable for use in a safety barrier is provided. A cable for use in a safety barrier may include a plastic core wire and a plurality of metal wires disposed adjacent to and longitudinally to the plastic core wire. The cable may be pre-stretched prior to installation in the safety barrier. A method of making cable for use in a safety barrier may include (a)providing a plastic core wire, (b) disposing a plurality of metal wires, each metal wire disposed adjacent to and longitudinally to the plastic core wire, and (c) prestretching the cable prior to installation in the safety barrier. | 2008-12-04 |
20080296547 | Post for wood fence system - A fence post for use in a wood fence system comprises an elongated center panel, a first side flange and a second side flange that are configured such that the fence post has a generally Z-shaped cross-section. The fence post is preferably made out of metal, such as galvanized steel or the like, with the rails and pickets being made out of wood to provide the appearance of a wood fence. The width of the center panel is approximately the same width as a standard two-by-four such that when the end of a rail is placed against the center panel one of the side flanges abut the side of the rail and the opposite side of the rail is aligned with the other side flange. In the fence system, pickets are attached to the rails. If desired, one picket is placed over a side rail to cover the fence post. | 2008-12-04 |
20080296548 | PANEL CONNECTION SYSTEM - A panel connection system is provided that includes a connection assembly having a sleeve and two connecting members that is pivotally coupled to a panel end post, another connection assembly having a connecting member, and a means for pivotally coupling the connecting members of the two connection assemblies. | 2008-12-04 |
20080296549 | Stair Rail Apparatus - A stair rail apparatus including a component ( | 2008-12-04 |
20080296550 | Resistive random access memory device and methods of manufacturing and operating the same - Provided may be a resistive random access memory (RRAM) device and methods of manufacturing and operating the same. The resistive random access memory device may include at least one first electrode, at least one second electrode spaced apart from the at least one first electrode, a first structure including a first resistance-changing layer between the at least one first and second electrodes, and a first switching element electrically connected to the first resistance-changing layer, wherein at least one of the first and second electrodes include an alloy layer having a noble metal and a base metal. | 2008-12-04 |
20080296551 | RESISTANCE MEMORY ELEMENT AND METHOD OF MANUFACTURING THE SAME - A resistance memory element having a pair of electrodes and an insulating film sandwiched between a pair of electrodes includes a plurality of cylindrical electrodes of a cylindrical structure of carbon formed in a region of at least one of the pair of electrodes, which is in contact with the insulating film. Thus, the position of the filament-shaped current path which contributes to the resistance states of the resistance memory element can be controlled by the positions and the density of the cylindrical electrodes. | 2008-12-04 |
20080296552 | PHASE CHANGE MEMORY CELL STRUCTURES AND METHODS FOR MANUFACTURING THE SAME - Phase change memory cell structures and methods for fabricating the same are provided. An exemplary embodiment of a phase change memory cell structure includes a first electrode formed over a first dielectric layer. A second dielectric layer is formed over the first electrode. A conductive member is formed through the second dielectric layer and electrically contacting the first electrode, wherein the conductive member comprises a lower element and an upper element sequentially stacking over the first electrode, and the lower and upper elements comprises different materials. A phase change material layer is formed over the second dielectric layer, electrically contacting the conductive member. A second electrode is formed over the phase change material layer. | 2008-12-04 |
20080296553 | INTEGRATED CIRCUIT HAVING CONTACT INCLUDING MATERIAL BETWEEN SIDEWALLS - An integrated circuit includes a bottom electrode, a top electrode, resistivity changing material between the bottom electrode and the top electrode, and a contact contacting the top electrode. The contact includes a bottom and sidewalls. The integrated circuit includes first material between the sidewalls of the contact. | 2008-12-04 |
20080296554 | PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF - Phase change memory devices and fabrication methods thereof. A phase change memory device includes an array of phase change memory cells. Each phase change memory cell includes a selecting transistor disposed on a substrate. An upright electrode structure is electrically connected to the selecting transistor. An upright phase change memory layer is stacked on the upright electrode structure with a contact area therebetween, wherein the contact area serves as the location where phase transition takes place. | 2008-12-04 |
20080296555 | LAMP WITH CONTROLLABLE SPECTRUM - An area illumination inorganic electro-luminescent device including a substrate; and an array of one or more commonly addressed, light-emitting elements. Each commonly-addressed, light-emitting element includes a first electrode layer formed over the substrate, one or more light-emitting layers formed over the first electrode layer and a second electrode layer formed over the light-emitting layer. The light-emitting layers include multiple core/shell quantum dot emitters formed in a common polycrystalline semiconductor matrix, and a number of different core/shell quantum dot emitters emit light with a spectral power distribution having a peak and a FWHM bandwidth, such that the peak wavelengths differ by an amount less than or equal to the average FWHM bandwidth of the different core/shell quantum dot emitters within the range of 460 to 670 nm. | 2008-12-04 |
20080296556 | Method For Dopant Calibration of Delta Doped Multilayered Structure - In a calibration method, the relation between dopant concentrations of δ-doping layers in a multilayered semiconductor structure and process parameters is determined S | 2008-12-04 |
20080296557 | Semiconductor Power Switch and Method for Producing a Semiconductor Power Switch - A semiconductor power switch and method is disclosed. In one embodiment the semiconductor power switch has a source contact, a drain contact, a semiconductor structure which is provided between the source contact and the drain contact, and a gate which can be used to control a current flow through the semiconductor structure between the source contact and the drain contact. The semiconductor structure has a plurality of nanowires which are connected in parallel and are arranged in such a manner that each nanowire forms an electrical connection between the source contact and the drain contact. | 2008-12-04 |
20080296558 | Method of Synthesizing Y-Junction Single-Walled Carbon Nanotubes and Products Formed Thereby - A method has been developed of synthesizing Y-SWNTs with controlled density, position, and growth direction. The process includes patterning a substrate with a solvent solution of catalyst metal ions, dopant metal ions and metal oxide ions, having in a molar ratio of catalyst to dopant in the range of 0.1 to 0.5 moles of catalyst metal per mole of dopant metal, prior to heating to 600-1200° C. with a flow of hydrocarbon gas. A Y-SWNT can be used as a building component of nanoscale two- and three-terminal electronic devices, such as interconnects, diodes, and transistors. This development has a profound impact on nanoscale semiconductor industry, since it is certain that the market share of nanoscale devices using Y-SWNTs will be increased to a great extent. | 2008-12-04 |
20080296559 | Method for Fabricating a Nanoelement Field Effect Transistor with Surrounded Gate Structure - A nanoelement field effect transistor includes a nanotube disposed on the substrate. A first source/drain region is coupled to a first end portion of the nanoelement and a second source/drain region is coupled to a second end portion of the nanoelement. A recess in a surface region of the substrate is arranged in such a manner that a region of the nanoelement arranged between the first and second end portions is taken out over the entire periphery of the nanoelement. A gate-insulating structure covers the periphery of the nanoelement and a gate structure covers the periphery of the gate-insulating structure. | 2008-12-04 |
20080296560 | Method for Manufacturing Semiconductor Device - The present invention provides a method for manufacturing a semiconductor device which can reduce characteristic deterioration due to impurity incorporation. The present invention also provides a semiconductor device and an electric appliance with reduced characteristic deterioration due to the impurity incorporation. The method for manufacturing a semiconductor device has a process for depositing an organic semiconductor. In addition, a process for introducing and exhausting gas having low reactivity while heating a treater so that temperature in the inside of the treater is higher than sublimation temperature of the organic semiconductor after taking a subject deposited with the organic semiconductor from the treater. | 2008-12-04 |
20080296561 | Memory Device and Semiconductor Device - The present invention provides a memory device which has a memory element having a simple structure in which a composition layer is sandwiched between a pair of conductive layers. With this characteristic, a memory device which is involatile, easily manufactured, and additionally recordable can be provided. A memory device of the present invention has plural memory cells, plural bit lines extending in a first direction, and plural word lines extending in a second direction which is perpendicular to the first direction. Each of the plural memory cells has a memory element. The memory element comprises a first conductive layer forming the bit line, a second conductive layer forming the word line, and a composition layer to be hardened by an optical action. The composition layer is formed between a first conductive layer and a second conductive layer. | 2008-12-04 |
20080296562 | Methods and apparatus for fabricating carbon nanotubes and carbon nanotube devices - Methods and apparatus for fabricating carbon nanotubes (CNTs) and carbon nanotube devices. These include a method of fabricating self-aligned CNT field-effect transistors (FET), a method and apparatus of selectively etching metallic CNTs and a method and apparatus of fabricating an oxide in a carbon nanotube (CNT) device. These methods and apparatus overcome many of the disadvantages and limitations of the prior art. | 2008-12-04 |
20080296563 | Carbon nanotube field effect transistor - A nanotube-based flexible field effect transistor and its method of manufacture is provided. The field effect transistor according to the invention comprises at least two contact electrodes, respectively drain and source electrodes, an electrical conduction zone connected to the contact electrodes, said zone comprising a plurality of single-wall carbon nanotubes that are substantially aligned, a gate electrode for controlling the electric current circulating in said zone and a flexible substrate on which the contact and gate electrodes are deposited. The nanotube density in the conduction zone is strictly greater than 10 nanotubes per micrometer. | 2008-12-04 |
20080296564 | PHOTOELECTRIC CONVERSION ELEMENT AND SOLAR CELL - A photoelectric conversion element having a pair of electrodes, and a semiconductor layer comprising a semiconductor carrying a dye and an electrolyte layer is disclosed. The dye is represented by Formulas 1 or 2; | 2008-12-04 |
20080296565 | METHOD OF FABRICATING POLYCRYSTALLINE SILICON LAYER, TFT FABRICATED USING THE SAME, METHOD OF FABRICATING TFT, AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE HAVING THE SAME - A method of fabricating a polycrystalline silicon layer includes: forming an amorphous silicon layer on a substrate; crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal; forming a metal layer pattern or metal silicide layer pattern in contact with an upper or lower region of the polycrystalline silicon layer corresponding to a region excluding a channel region in the polycrystalline silicon layer; and annealing the substrate to getter the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer to the region in the polycrystalline silicon layer having the metal layer pattern or metal silicide layer pattern. Accordingly, the crystallization-inducing metal existing in the channel region of the polycrystalline silicon layer can be effectively removed, and thus a thin film transistor having an improved leakage current characteristic and an OLED display device including the same can be fabricated. | 2008-12-04 |
20080296566 | Making organic thin film transistor substrates for display devices - An organic thin film transistor substrate for a display device includes a gate line, a data line insulated from the gate line, at least two organic thin film transistors, each of which is connected between the gate line and the data line, and both of which are commonly connected to a main drain electrode, and a pixel electrode connected to the main drain electrode. | 2008-12-04 |
20080296567 | METHOD OF MAKING THIN FILM TRANSISTORS COMPRISING ZINC-OXIDE-BASED SEMICONDUCTOR MATERIALS - A method of making a thin film transistor comprising a zinc-oxide-containing semiconductor material and spaced apart first and second electrodes in contact with the material. The co-generation of high quality zinc oxide semiconductor films and contact electrodes is obtained, at low temperatures, using non-vacuum conditions, silver nanoparticles are deposited to form the source and drain and, upon heating, converted to conducting metal. Such an in-situ formation of the silver metal/zinc oxide interface provides superior transistor activity compared to evaporated silver. | 2008-12-04 |
20080296568 | Thin film transistors and methods of manufacturing the same - A TFT includes a zinc oxide (ZnO)-based channel layer having a plurality of semiconductor layers. An uppermost of the plurality of semiconductor layers has a Zn concentration less than that of a lower semiconductor layer to suppress an oxygen vacancy due to plasma. The uppermost semiconductor layer of the channel layer also has a tin (Sn) oxide, a chloride, a fluoride, or the like, which has a relatively stable bonding energy against plasma. The uppermost semiconductor layer is relatively strong against plasma shock and less decomposed when being exposed to plasma, thereby suppressing an increase in carrier concentration. | 2008-12-04 |
20080296569 | Compound semiconductor material and method for forming an active layer of a thin film transistor device - A compound semiconductor material for forming an active layer of a thin film transistor device is disclosed, which has a group II-VI compound doped with a dopant ranging from 0.1 to 30 mol %, wherein the dopant is selected from a group consisting of alkaline-earth metals, group IIIA elements, group IVA elements, group VA elements, group VIA elements, and transitional metals. The method for forming an active layer of a thin film transistor device by using the compound semiconductor material of the present invention is disclosed therewith. | 2008-12-04 |
20080296570 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. The device includes a substrate and a first wiring layer overlying the substrate. The first wiring layer comprises a first wiring area surrounded by a first seal ring. The first seal ring comprises a first monitor circuit isolated by a first dielectric layer embedded in the first seal ring. The first monitor circuit is responsive to a predetermined amount of deformation occurs in the third dielectric layer. | 2008-12-04 |
20080296571 | MULTI-PROJECT WAFER AND METHOD OF MAKING SAME - A semiconductor wafer is fabricated. The wafer has a plurality of dies. The plurality of dies include at least operable dies of a first type and operable dies of a second type different from the first type. The dies of the second type are rendered inoperable, while keeping the dies of the first type operable. The wafer is provided with the operable dies of the first type and the inoperable dies of the second type on it, for testing of the dies of the first type. | 2008-12-04 |
20080296572 | OPTICAL SEMICONDUCTOR DEVICE WITH SEALING SPACER - An optical semiconductor device may include a semiconductor component having an optical sensor on a front face thereof, and a transparent plate having electrical connection lines on a rear face thereof and lying outside a free region of the rear face. The front face of the semiconductor component may be attached to the rear face of the transparent plate so that the optical sensor is adjacent the free region. The optical semiconductor device may also include electrical connectors electrically connecting the semiconductor component to the electrical connection lines, a sealing spacer extending only partway between the front face of the semiconductor component and the rear face of the transparent plate at the periphery of the optical sensor, and an encapsulating material for encapsulating the electrical connectors and a periphery of the semiconductor component on the rear face of the transparent plate. The sealing spacer may be structurally distinct from, abutting, and retaining the encapsulating material. | 2008-12-04 |
20080296573 | Solid-state element and solid-state element device - A solid-state element has: a semiconductor layer formed on a substrate, the semiconductor layer having a first layer that corresponds to an emission area of the solid-state element to and a second layer through which current is supplied to the first layer; a light discharge surface through which light emitted from the first layer is externally discharged, the light discharge surface being located on the side of the substrate; and an electrode having a plurality of regions that are of a conductive material and are in ohmic-contact with the second layer. | 2008-12-04 |
20080296574 | Pixel Structure of LCD and Fabrication Method Thereof - In this pixel structure, a metal layer/a dielectric layer/a heavily doped silicon layer constitutes a bottom electrode/a capacitor dielectric layer/a top electrode of a storage capacitor. At the same time, a metal shielding layer is formed under the thin film transistor to decrease photo-leakage-current. | 2008-12-04 |
20080296575 | THIN FILM TRANSISTOR, ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor for a thin film transistor liquid crystal display (TFT-LCD), an array substrate and manufacturing method thereof are provided. The thin film transistor comprises a source, a drain, and a channel region between the source and drain. A source extension region is connected with the source, a drain expanded region is connected with the drain, and the source extension region is disposed opposite to the drain extension region to form a channel extension region therebetween. | 2008-12-04 |
20080296576 | Display Device - To provide a display device capable of reliably forming a resistive element formed on a substrate including pixels. A display device including at least a thin-film transistor and a resistive element on a substrate has a gate electrode, an insulating film, a semiconductor layer and a conductive layer which are sequentially stacked on the substrate, in which the resistive element is formed by using the semiconductor layer formed between end portions of wiring made of the conductive layer as a resistive body, and at least one conductive layer apart from the end portions is formed on the semiconductor layer between the end portions of wiring. | 2008-12-04 |
20080296577 | Camera module package - There is provided a camera module package including: a substrate having an image sensor disposed on one surface thereof and a pad electrically connected to the image sensor; a protective cap adhered onto the substrate by an adhesive surrounding the image sensor to seal the image sensor, the protective cap transmitting light; and a supporting part surrounding the protective cap, the supporting part adhering and supporting at least one lens formed corresponding to the image sensor. The camera module package is reduced in thickness and size, and minimized in an error of a focal length between the lens and the image sensor, thereby achieving accuracy and high reliability. | 2008-12-04 |
20080296578 | Wiring Material and a Semiconductor Device Having a Wiring Using the Material, and the Manufacturing Method Thereof - An object of the present invention is to realize a semiconductor device having a high TFT characteristic. In manufacturing an active matrix display device, electric resistivity of the electrode material is kept low by preventing penetration of oxygen ion into the electrode in doping of an impurity ion. A display device having a low electric resistivity can be obtained. | 2008-12-04 |
20080296579 | NANOSILICON SEMICONDUCTOR SUBSTRATE MANUFACTURING METHOD AND SEMICONDUCTOR CIRCUIT DEVICE USING NANOSILICON SEMICONDUCTOR SUBSTRATE MANUFACTURED BY THE METHOD - This invention provides a substrate structure capable of controlling the threshold voltage of a MOS transistor independently of the substrate concentration and easily suppressing a short channel effect caused by reducing the channel length. A first nanosilicon film formed from nanosilicon grains having the same grain size is formed on a silicon oxide film on the surface of a silicon substrate. A silicon nitride film is formed on the first nanosilicon film. Then, a second nanosilicon film having an average grain size different from that of the first nanosilicon film is formed. A semiconductor circuit device is formed on a thus manufactured nanosilicon semiconductor substrate. | 2008-12-04 |
20080296580 | SILICON OXIDE FILM, PRODUCTION METHOD THEREFOR AND SEMICONDUCTOR DEVICE HAVING GATE INSULATION FILM USING THE SAME - The present invention provides a high-performance silicon oxide film as a gate insulation film and a semiconductor device having superior electric characteristics. The silicon oxide film according to the present invention includes CO | 2008-12-04 |
20080296581 | Pixel structure and method for forming the same - A pixel structure including at least one thin-film transistor, at least one storage capacitor, a patterned first metal layer, an interlayer dielectric layer, a passivation layer, and a patterned pixel electrode is provided. The storage capacitor is electrically connected to the thin-film transistor. The patterned first metal layer is covered by the interlayer dielectric layer. The thin-film transistor and the interlayer dielectric layer are covered by the passivation layer, wherein an opening is formed in the passivation layer and a part of the interlayer dielectric layer. The patterned pixel electrode is formed on a part of the passivation layer and a part of the interlayer dielectric layer and contacted with a part of the passivation layer and a part of the interlayer dielectric layer. The storage capacitor includes the patterned first metal layer, a remained part of the interlayer dielectric layer located under the opening, and the patterned pixel electrode. | 2008-12-04 |
20080296582 | TFT-LCD ARRAY SUBSTRATE - A thin film transistor liquid crystal display (TFT-LCD) array substrate with a repairable pixel structure is provided. The array substrate comprises a gate line and a data line, and the gate line and the data line intersect with each other to define a pixel unit. The pixel unit comprises a TFT and a pixel electrode, and a spare source electrode, a spare drain electrode, and a spare channel region are formed alongside a channel region of the TFT to form a spare TFT. | 2008-12-04 |
20080296583 | Display Device And Manufacturing Method of The Same - A display device includes a capacitive element configured so that a portion of a semiconductor layer which is made conductive constitutes one electrode, an insulation film which covers the semiconductor layer constitutes a dielectric film, and a conductive layer which includes a portion which is formed over the insulation film and is overlapped to the one electrode constitutes another electrode. The conductive layer has an extension portion which extends outside of a region where the semiconductor layer is formed from the inside of the region where the semiconductor layer is formed, and is formed over the insulation film. The insulation film has, in a region where the insulation film is overlapped to both the semiconductor layer and the extension portion of the conductive layer, a film thickness which is larger than a film thickness at a portion thereof which is overlapped to the one electrode. | 2008-12-04 |
20080296584 | III-V Nitride Semiconductor Layer-Bonded Substrate and Semiconductor Device - Affords III-V nitride semiconductor layer-bonded substrates from which semiconductor device of enhanced properties can be manufactured, and semiconductor devices incorporating the III-V nitride semiconductor layer-bonded substrates. The III-V nitride semiconductor layer-bonded substrate, in which a III-V nitride semiconductor layer and a base substrate are bonded together, is characterized in that thermal expansion coefficient difference between the III-V nitride semiconductor layer and the base substrate is 4.5×10 | 2008-12-04 |
20080296585 | GROWTH METHOD OF GaN CRYSTAL, AND GaN CRYSTAL SUBSTRATE - A method of producing a GaN crystal is directed to growing a GaN crystal on a GaN seed crystal substrate. The method includes the steps of preparing a GaN seed crystal substrate including a first dopant such that the thermal expansion coefficient of the GaN seed crystal substrate becomes greater than that of the GaN crystal, and growing the GaN crystal to a thickness of at least 1 mm on the GaN seed crystal substrate. Accordingly, there can be provided a method of producing a GaN crystal that can suppress generation of a crack and grow a thick GaN crystal, and a GaN crystal substrate. | 2008-12-04 |
20080296586 | COMPOSITE WAFERS HAVING BULK-QUALITY SEMICONDUCTOR LAYERS AND METHOD OF MANUFACTURING THEREOF - Method for producing composite wafers with thin high-quality semiconductor films atomically attached to synthetic diamond wafers is disclosed. Synthetic diamond substrates are created by depositing synthetic diamond onto a nucleating layer deposited on bulk semiconductor wafer which has been prepared to allow separation of the thin semiconductor film from the remaining bulk semiconductor wafer. The remaining semiconductor wafer is available for reuse. The synthetic diamond substrate serves as heat spreader and a mechanical substrate. | 2008-12-04 |
20080296587 | Silicon carbide semiconductor device having junction barrier schottky diode - A silicon carbide semiconductor device includes a substrate; a drift layer having a first conductivity type; an insulating layer; a Schottky electrode; an ohmic electrode; a resurf layer; and second conductivity type layers. The drift layer and the second conductivity type layers provide multiple PN diodes. Each second conductivity type layer has a radial width with respect to a center of a contact region between the Schottky electrode and the drift layer. A radial width of one of the second conductivity type layers is smaller than that of another one of the second conductivity type layers, which is disposed closer to the center of the contact region than the one of the second conductivity type layers. | 2008-12-04 |
20080296588 | Semiconductor substrate with electromagnetic-wave-scribed nicks, semiconductor light-emitting device with such semiconductor substrate and manufacture thereof - The invention discloses a substrate and a fabricating method thereof for epitaxy of a semiconductor light-emitting device. An upper surface of the substrate according to the invention, where the epitaxy of the semiconductor light-emitting device is to be performed, has a plurality of electromagnetic-wave-scribed nicks. | 2008-12-04 |
20080296589 | Solid-State Lighting Device Package - The present invention provides a lighting device package, which can provide a means for efficient thermal access to the lighting device package in addition to a desired level of light extraction from the one or more light-emitting elements within the lighting device package. The lighting device package comprises a substrate having a thermally conductive region to which one or more light-emitting elements are thermally connected, wherein the light-emitting elements may be relatively closely packed. An optical system is optically coupled to one or more light emitting elements, and is positioned relative to the substrate such that the optical system substantially encloses the one or more light-emitting elements on the substrate. The optical system is adapted to extract the light from the one or more light-emitting elements. | 2008-12-04 |
20080296590 | LED-Based Light Source Having Improved Thermal Dissipation - A light source having a plurality of dies mounted on leads that are partially enclosed in a plastic body is disclosed. Each die is powered by first and second contacts. One contact is connected to the lead on which the die is mounted. Light from the LED exits the die through the top surface. Each lead includes a layer of metal of substantially constant thickness. The layer includes a boundary, a die mounting region within the boundary and a heat transfer region within the boundary. The boundary increases in a dimension perpendicular to a line connecting the die mounting region and the heat transfer region. The leads are arranged such that the die mounting regions are proximate to a first point and oriented such that the lines radiate from the first point. The light source can be manufactured using conventional lead frame techniques. | 2008-12-04 |
20080296591 | Conductor Structure, Pixel Structure, and Methods of Forming the Same - A method for forming a conductor structure is provided. The method comprises: (1) providing a substrate; (2) forming a patterned dielectric layer with a first opening which exposes a portion of the substrate; forming a patterned organic material layer on the dielectric layer with a second opening which corresponds to the first opening and expose the exposed portion of the substrate; (3) forming a first barrier layer on the organic material layer and the exposed portion of the substrate; (4) forming a metal layer on the first barrier layer; and (5) removing the organic material layer, the first barrier layer thereon and the metal layer thereon. | 2008-12-04 |
20080296592 | Semiconductor Light-Emitting Device - A semiconductor light-emitting device includes: a light-emitting semiconductor element arranged on a lead frame; a transparent resin mold covering the light-emitting semiconductor element and the lead frame except a terminal portion of the lead frame; and a reflective surface formed on a bent portion of part of the lead frame. The terminal portion of the lead frame has a terminal structure, which can serve as a combination of a top-view type and a side-view type. | 2008-12-04 |
20080296593 | Silicon Light Emitting Device - Provided is a highly-efficient silicon light emitting device including an improved structure by which more light of the light emitted toward the lateral side of the light emitting device is emitted toward the front side thereof than conventional light emitting devices so as to improve the brightness. The silicon light emitting device includes a substrate, a plurality of light emitting structures formed on the substrate, each of the light emitting structures comprising an active layer, and a metal electrode comprising a lower metal electrode formed below the substrate and an upper metal electrode formed on the light emitting structures. The light emitting structures have column shapes whose vertical cross-sections are inverse trapezoid. | 2008-12-04 |
20080296594 | NITRIDE OPTOELECTRONIC DEVICES WITH BACKSIDE DEPOSITION - Nitride optoelectronic devices that have asymmetric double-sided structures and methods fabricating such structures are disclosed. Two n-type III-N layers are formed simultaneously over opposite sides of a substrate with substantially the same composition. Thereafter, a p-type III-N active layer is formed over one of the n-type III-N layers but not over the other. | 2008-12-04 |
20080296595 | LIGHT EMITTING DIODE WITH HIGH ILLUMINATION - A light emitting diode ( | 2008-12-04 |
20080296596 | NOVEL GREEN EMITTING PHOSPHORS AND BLENDS THEREOF - Phosphor compositions, blends thereof and light emitting devices including white light emitting LED based devices, and backlights, based on such phosphor compositions. The devices include a light source and a phosphor material as described. Also disclosed are phosphor blends including such a phosphor and devices made therefrom. | 2008-12-04 |
20080296597 | Chip scale light emitting device - A light emitting device includes: a circuit board having a dielectric substrate and first and second electrodes provided on the dielectric substrate, the dielectric substrate being formed with a retaining hole; and a light emitting diode chip received in the retaining hole in the dielectric substrate and connected electrically to the first and second electrodes. | 2008-12-04 |
20080296598 | CURRENT SPREADING LAYER WITH MICRO/NANO STRUCTURE, LIGHT-EMITTING DIODE APPARATUS AND ITS MANUFACTURING METHOD - A light-emitting diode (LED) apparatus includes an epitaxial layer and a current spreading layer. The epitaxial layer has a first semiconductor layer, an active layer and a second semiconductor layer. The current spreading layer is disposed on the first semiconductor layer of the epitaxial layer and has a micro/nano roughing structure layer and a transparent conductive layer. The micro/nano roughing structure layer has a plurality of hollow parts, and the transparent conductive layer covers a surface of the micro/nano roughing structure layer and is filled within the hollow parts. In addition, a manufacturing method of the LED apparatus and a current spreading layer with a micro/nano structure are also disclosed. | 2008-12-04 |
20080296599 | LED Package with Stepped Aperture - A light emitting diode (LED) package for high temperature operation which includes a printed wire board and a heat sink. The LED package may include a formed heat sink layer, which may be thermally coupled to an external heat sink. The printed wire board may include apertures that correspond to the heat sink such that the heat sink is integrated with the printed wire board layer. The LED package may include castellations for mounting the package on a secondary component such as a printed wire board. The LED package may further comprise an isolator disposed between a base metal layer and one or more LED die. Optionally, the LED die may be mounted directly on a base metal layer. The LED package may include a PWB assembly having a stepped cavity, in which one or more LED die are disposed. The LED package is advantageously laminated together using a pre-punched pre-preg material or a pressure sensitive adhesive. | 2008-12-04 |
20080296600 | Organic light emitting diode (OLED) display and method of manufacturing the same - An organic light emitting display includes a substrate, an OLED including an anode electrode, a cathode electrode and an organic thin film formed between the anode electrode and the cathode electrode, a reflective layer on the OLED, the reflective layer comprising a laminated first material and second material, the first material and the second material having different refractive indices, and an encapsulation layer on the reflective layer, the encapsulation layer comprising at least one of organic thin film and inorganic thin film. | 2008-12-04 |
20080296601 | Light-Emitting Diode Incorporating an Array of Light Extracting Spots - A light-emitting diode includes an optical layer formed in an array of substantially equidistant light extracting spots integrated to its multi-layered structure. The array of light extracting spots includes a distribution of juxtaposed hexagon patterns. The layer thickness of the light extracting spots is less than 800 Å. | 2008-12-04 |
20080296602 | Light emitting diode - A light emitting diode (LED) includes a substrate, a first type epitaxial layer, a light emitting layer, a second type epitaxial layer and a plurality of nano-particles. The first type epitaxial layer is disposed on the substrate. The light emitting layer is disposed on the first type epitaxial layer. The second type epitaxial layer is disposed on the light emitting layer and has one surface formed with a plurality of recesses and a plurality of protrusions. The nano-particles are disposed on the protrusions of the second type epitaxial layer. | 2008-12-04 |
20080296603 | Light emitting device with high light extraction efficiency - An exemplary solid-state light emitting device includes a substrate, a light emitting structure, a first electrode and a second electrode have opposite polarities with each other. The light emitting structure is formed on the substrate and includes a first-type semiconductor layer and a second-type semiconductor layer. The first electrode is electrically connected with the first-type semiconductor layer. The second electrode includes a transparent conductive layer formed on the second-type semiconductor layer and a metallic conductive layer formed on a region of the transparent conductive layer and in electrical contact therewith. Any point on the region is no more than 300 micrometers from a nearest part of the metallic conductive layer, and an exposed portion uncovered by the metallic conductive layer of the region has an area of at least 80% of a total area of the transparent conductive layer. | 2008-12-04 |
20080296604 | LIGHT-EMITTING DIODE LEAD FRAME AND MANUFACTURE METHOD THEREOF - The invention discloses an LED lead frame and the manufacture method thereof. First, a press-formed strip including a guide strip, a first metal frame, and a second metal frame is provided. The first metal frame and the second metal frame are connected to the guide strip and are connected to each other via a connection part. The first metal frame includes a first region. The second metal frame includes a second region. The connection part includes a third region. Then, the press-formed strip is clipped by a fixture such that the first region and the second region are exposed. Then, the press-formed strip is put in an electroplate solution and an electroplate layer is plated on the first region and the second region, but not on the third region. At last, the fixture is removed. The LED lead frame is then obtained. | 2008-12-04 |
20080296605 | Light emitting device - A light emitting device includes a resin case including a concave portion with a reflector portion surrounding a light emitting element, a first lead and a second lead that are formed of a metal, exposed at a bottom of the concave portion of the case, and disposed away from each other in a predetermined direction, and a resin sealing material filled in the concave portion. The first lead includes a light emitting element mounting portion, a first wire connection portion, a first bleed-out preventing notch, and an opposite notch. The second lead includes a protective device mounting portion, a second wire connection portion, and a second bleed-out preventing notch. The first lead and the second lead are arranged such that, in the predetermined direction, the light emitting element mounting portion is opposed to the second bleed-out preventing notch, the first wire connection portion is opposed to the protective device mounting portion, and the opposite notch is opposed to the second wire connection portion. | 2008-12-04 |
20080296606 | Electronic Module and Chip Card With Indicator Light - The invention generally relates to devices comprising semiconductor chips. More specifically, the invention relates to an electronic module ( | 2008-12-04 |
20080296607 | ENVIRONMENTALLY ROBUST LIGHTING DEVICES AND METHODS OF MANUFACTURING SAME - An illustrative lighting device comprises: a light emitting chip; a silicone encapsulant disposed over the light emitting chip; and a light transmissive vinyl or acrylic layer sealing an assembly including at least the silicone encapsulant and the light emitting chip. An illustrative method of fabricating a lighting device comprises: encapsulating a light emitting chip with a silicone encapsulant; and sealing an assembly including at least the silicone encapsulant and the light emitting chip using a light transmissive vinyl or acrylic layer. An illustrative method of fabricating a lighting device comprises: encapsulating a light emitting chip with a silicone encapsulant; and sealing an assembly including at least the silicone encapsulant and the light emitting chip by disposing a light transmissive plastic layer as a unit over the assembly. | 2008-12-04 |
20080296608 | Light-emitting device - A light-emitting element | 2008-12-04 |
20080296609 | Nitride Semiconductor Device Comprising Bonded Substrate and Fabrication Method of the Same - A substrate | 2008-12-04 |
20080296610 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SUBSTRATE USED IN FORMATION OF THE SAME - For a semiconductor laser, a stacked member comprising an active layer is formed on the surface of a GaN single-crystal substrate, a defect aggregation portion is formed on the rear face of the GaN single-crystal substrate, and an electrode is formed so as to be electrically connected to the defect aggregation portion on the rear face. The defect aggregation portion of this semiconductor laser has numerous crystal defects, and so the carrier concentration is high, and the electrical resistivity is lowered significantly. For this reason, in a semiconductor laser of this invention in which an electrode is formed on this defect aggregation portion, an Ohmic contact can easily be obtained between the GaN single-crystal substrate and the electrode, and by this means a lowered driving voltage is realized. | 2008-12-04 |
20080296611 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A semiconductor device includes: a semiconductor layer having a first major surface, a second major surface provided on opposite side of the first major surface, and a channel formation region provided in a surface portion on the first major surface side; a first main electrode provided inside a dicing street on the first major surface of the semiconductor layer; a second main electrode provided inside a dicing street on the second major surface of the semiconductor layer; and a control electrode opposed to the channel formation region across an insulating film. | 2008-12-04 |