48th week of 2015 patent applcation highlights part 57 |
Patent application number | Title | Published |
20150340527 | SOLAR CELL MODULE - A solar cell module according to one embodiment of the present invention includes a first device group and a second device group each including a plurality of solar cell devices electrically connecting to each other, and a bypass device that is electrically connected to the first device group and the second device group. Further, in the embodiment, a covering member that covers the first device group, the second device group, and the bypass device, and a protective sheet that is located on the covering member, are included. In the embodiment, the protective sheet includes an opening portion that is located at a position facing the bypass device. | 2015-11-26 |
20150340528 | MONOLITHIC TANDEM VOLTAGE-MATCHED MULTIJUNTION SOLAR CELLS - Voltage-matched monolithic thin film multijunction solar cell and methods of producing cells having a first pn junction with a first band-gap energy, a second pn junction with a second band-gap energy and an insulating layer between the first and second pn junctions. The voltage-matched monolithic thin film multijunction solar cells further include a parallel connection between the first and second pn junctions to form a two-terminal photonic device. | 2015-11-26 |
20150340529 | DEVICE FOR INTERCONNECTING PHOTOVOLTAIC CELLS HAVING CONTACTS ON THEIR BACK SIDE, AND MODULE COMPRISING SUCH A DEVICE - The invention relates to a device for interconnecting photovoltaic cells having contacts on their back side, comprising at least one layer of a woven produced from electrically insulating fibres, comprising at least one thread or tape section made of an electrically conductive material woven with said fibres and arranged so as to be flush with the surface of at least one region of the woven in order to form an electrical contact region intended to be connected to a contact pad located on the back side of a cell. The invention also relates to a module of interconnected photovoltaic cells having contacts on the back side, comprising an interconnecting device arranged along the back side of the cells, and a process for manufacturing such a module. | 2015-11-26 |
20150340530 | BACK METAL LAYERS IN INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELLS - A multijunction solar cell comprising an upper first solar subcell having a first band gap; a middle second solar subcell adjacent to the first solar subcell and having a second band gap smaller than the first band gap, and having a base layer and an emitter layer; a graded interlayer adjacent to said second solar subcell, having a third band gap greater than the second band gap; a lower solar subcell adjacent to the grading interlayer, having a fourth band gap smaller than said second band gap such that the third subcell is lattice mismatched with respect to said second subcell; and a metal electrode layer deposited on said lower subcell and having a coefficient of thermal expansion substantially similar to that of the subcells. | 2015-11-26 |
20150340531 | METHOD OF MANUFACTURING SOLAR CELL AND SOLAR CELL - A solar cell is provided that comprising a semiconductor substrate having a first conductivity type; a first semiconductor layer having the first conductivity type, and on a principal surface of the semiconductor substrate; an insulation layer on the first semiconductor layer; a protective layer on the insulation layer; and a second semiconductor layer having a second conductivity type, and on the semiconductor substrate and the protective layer. A recessed region is positioned at a lateral side of the insulation layer, the recessed region formed by recessing a side surface of the insulation layer inward from a side surface of the first semiconductor layer and a side surface of the protective layer, and the second semiconductor layer is positioned in the recessed region above the first semiconductor layer in the recessed region. | 2015-11-26 |
20150340532 | METHOD OF STABILIZING HYDROGENATED AMORPHOUS SILICON AND AMORPHOUS HYDROGENATED SILICON ALLOYS - A method of forming a semiconductor material of a photovoltaic device that includes providing a surface of a hydrogenated amorphous silicon containing material, and annealing the hydrogenated amorphous silicon containing material in a deuterium containing atmosphere. Deuterium from the deuterium-containing atmosphere is introduced to the lattice of the hydrogenated amorphous silicon containing material through the surface of the hydrogenated amorphous silicon containing material. In some embodiments, the deuterium that is introduced to the lattice of the hydrogenated amorphous silicon containing material increases the stability of the hydrogenated amorphous silicon containing material. | 2015-11-26 |
20150340533 | SOLAR CELL STACK - A solar cell stack having a first semiconductor solar cell that has a p-n junction of a first material with a first lattice constant, and having a second semiconductor solar cell that has a p-n junction of a second material with a second lattice constant. The first lattice constant is smaller than the second lattice constant. The solar cell stack has a metamorphic buffer that includes a sequence of a first, lower AlInGaAs or AlInGaP layer and a second, center AlInGaAs or AlInGaP layer, and a third, upper AlInGaAs or AlInGaP layer, and the metamorphic buffer is formed between the first semiconductor solar cell and the second semiconductor solar cell. The lattice constant in the metamorphic buffer changes along the thickness dimension of the metamorphic buffer, and the lattice constant and the In content increase and the Al content decreases between at least two layers of the metamorphic buffer. | 2015-11-26 |
20150340534 | SOLAR CELL STACK - A solar cell stack having a first semiconductor solar cell that has a p-n junction of a first material with a first lattice constant and a second semiconductor solar cell that has a p-n junction of a second material with a second lattice constant. The solar cell stack has a metamorphic buffer that includes a sequence of a first, lower layer and a second, center layer, and a third, upper layer, and includes an InGaAs or an AlInGaAs or an InGaP or an AlInGaP compound. The metamorphic buffer is formed between the first and second semiconductor solar cells and the lattice constant in the metamorphic buffer changes along the buffer's thickness dimension. The lattice constant of the third layer is greater than the lattice constant of the second layer, and the lattice constant of the second layer is greater than the lattice constant of the first layer. | 2015-11-26 |
20150340535 | COMPOUND THIN-FILM PHOTOVOLTAIC CELL AND METHOD OF MANUFACTURING THEREOF - The method of manufacturing a compound thin-film photovoltaic cell, includes preparing a metal substrate, whose main constituent is iron, containing aluminium (Al) and chromium (Cr), and forming an alumina layer at least on an element forming surface of the metal substrate by thermal oxidation; forming an insulating layer on the alumina layer; depositing a first electrode layer on the insulating layer; depositing a compound light absorption layer on the first electrode layer; and depositing a second electrode layer on the compound light absorption layer. | 2015-11-26 |
20150340536 | ATOMIC LAYER DEPOSITION FOR PHOTOVOLTAIC DEVICES - A photovoltaic device and method include a substrate, a conductive layer formed on the substrate and an absorber layer formed on the conductive layer from a Cu—Zn—Sn containing chalcogenide material. An emitter layer is formed on the absorber layer and a buffer layer is formed on the emitter layer including an atomic layer deposition (ALD) layer. A transparent conductor layer is formed on the buffer layer. | 2015-11-26 |
20150340537 | AVALANCHE PHOTODIODE SEMICONDUCTOR STRUCTURE HAVING A HIGH SIGNAL-TO-NOISE RATIO AND METHOD FOR MANUFACTURING SUCH A PHOTODIODE - A semiconductor structure, and method for manufacturing, of avalanche photodiode type for receiving electromagnetic radiation in a given wavelength range and including a first semiconductor area configured for absorption of the electromagnetic radiation, a second area configured for providing a multiplication of carriers, and a third semiconductor area in contact with the second semiconductor area. The second area includes at least two subparts with the second subpart configured to have a mean carrier multiplication rate that is more substantial than that of the first subpart. | 2015-11-26 |
20150340538 | LATERAL GE/SI AVALANCHE PHOTODETECTOR - A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer. | 2015-11-26 |
20150340539 | ULTRAVIOLET SENSOR AND ELECTRONIC DEVICE USING ULTRAVIOLET SENSOR - An ultraviolet light sensor (UV sensor) with low costs is provided. As a UV sensor element, an oxide semiconductor transistor including a drain electrode with a comb-like shape is used, so that the length of a border between the drain electrode and a channel region is greater than the length of a border between a source electrode and the channel region. As a result, the off-state current of the oxide semiconductor transistor can be increased without a significant increase in the gate width, improving the sensitivity of the UV sensor. In addition, a reduced area in the element is achieved to reduce costs of the UV sensor. | 2015-11-26 |
20150340540 | METHODS OF IMPRINT PATTERNING OF IRREGULAR SURFACE - Patterned substrates for photovoltaic and other uses are made by pressing a flexible stamp upon a thin layer of resist material, which covers a substrate, such as a wafer. The resist changes phase or becomes flowable, flowing away from locations of impression, revealing the substrate, which is subjected to some shaping process. A typical substrate is silicon, and a typical resist is a wax. Workpiece textures include extended grooves, discrete, spaced apart pits, and combinations and intermediates thereof. Platen or rotary patterning apparatus may be used. Rough and irregular workpiece substrates may be accommodated by extended stamp elements. Resist may be applied first to the workpiece, the stamp, or substantially simultaneously, in discrete locations, or over the entire surface of either. The resist dewets the substrate completely where desired. | 2015-11-26 |
20150340541 | DOPING MEDIA FOR THE LOCAL DOPING OF SILICON WAFERS - The present invention relates to a novel process for the preparation of print-able, high-viscosity oxide media, and to the use thereof in the production of solar cells. | 2015-11-26 |
20150340542 | PIXELATED SILICON CELLS OR INTEGRATED CIRCUITS - A method, apparatus and system for flexible, ultra-thin, and high efficiency pixelated silicon or other semiconductor photovoltaic solar cell array fabrication is disclosed. A structure and method of creation for a pixelated silicon or other semiconductor photovoltaic solar cell array with interconnects is described using a manufacturing method that is simplified compared to previous versions of pixelated silicon photovoltaic cells that require more microfabrication steps. | 2015-11-26 |
20150340543 | PRODUCTION METHOD FOR SOLAR CELL MODULE AND PRODUCTION DEVICE FOR SOLAR CELL MODULE - A production method for a solar cell module, having: a first step in which a first solar cell and a second solar cell are arranged so as to be adjacent to each other; a second step in which a heat-curable resin film as an adhesive is arranged on the first solar cell and the second solar cell; a third step in which a connection member is arranged upon the adhesive, so as to straddle the first solar cell and the second solar cell; a fourth step in which pressure is applied simultaneously to the sections of the connection member that overlap the first solar cell and the second solar cell, and the connection member is temporarily fixed to the first solar cell and the second solar cell; and a fifth step in which the connection member is fixed to the first solar cell and the second solar cell by curing the adhesive. | 2015-11-26 |
20150340544 | METHOD FOR ANNEALING A THIN FILM PHOTOVOLTAIC CELL DEVICE - A method of method for annealing a thin film solar cell device is described. The method includes vacuum annealing an as-deposited photovoltaic cell stack composed of a first electrode, a p-i-n junction having at least one p-doped layer, at least one n-doped layer, and at least one intrinsic layer disposed there between, and a second electrode. The vacuum annealing is performed in a non-plasma, vacuum environment by elevating a temperature of the photovoltaic cell stack to an anneal temperature within the range of between 150 degrees C. and 250 degrees C. | 2015-11-26 |
20150340545 | METHOD FOR MANUFACTURING METALLIC REFLECTOR FOR LED PACKAGE - A metallic reflector manufacturing method for an LED package. The method includes preparing a metal plate, and processing a stamping reflector that includes a lower body and an upper body that is extended from an upper side of the lower body and is integrally formed with the lower body. A reflection surface that is slanted by a predetermined angle is formed at a central portion of the upper body and the lower body to reflect the light of the LED chip to the outside. A fixation portion is formed to fix the lower body on a substrate that the LED chip is mounted on. The method further includes sequentially plating Ni and Ag on the reflection surface or the stamping reflector surface. The stamping processing includes a piercing step, a drawing step, a first noting step, a half etching step that forms the fixation portion, and a second notching step. | 2015-11-26 |
20150340546 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device has: preparing a base body which comprises a pair of connection terminals; preparing a light emitting element which includes a substrate, a semiconductor laminate that is laminated on the substrate, and a pair of electrodes formed on the surface of the semiconductor laminate; joining the electrodes of the light emitting element to the connection terminals of the base body; covering the light emitting element with a sealing member; and removing at least a part of the sealing member and a part of the substrate of the light emitting element from the opposite side from the base body so that an upper surface of the sealing member is lower than an upper surface of the substrate of the light emitting element. | 2015-11-26 |
20150340547 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A method for manufacturing a light emitting device has: forming a first phosphor layer including a first phosphor that is based on KSF or quantum dots on a light emitting element by a method other than spraying, and forming a second phosphor layer including a second phosphor that is different from the first phosphor on the first phosphor layer by spraying. | 2015-11-26 |
20150340548 | OPTIMISED METHOD FOR PRODUCING ELECTROLUMINESCENT NANOWIRES - A process for fabricating an array of nanowires on the surface of a substrate, the nanowires comprising a portion capable of emitting radiation under action of an electrical or optical control and at least partially connected to one another electrically via a conductive upper layer, comprises steps allowing a subset of defective nanowires to be identified among active nanowires, the steps comprising: producing a layer of negative photoresist sensitive to the emission wavelength, covering the array of the nanowires; activating the array of the nanowires under electrical control or optical control so the active nanowires emit the radiation, the radiation decreasing the solubility of the negative resist; developing the resist level with the defective nanowires, leaving zones made less soluble and encircling the active nanowires; and removing the conductive layer above the defective nanowires. A process for fabricating one or more light-emitting diodes using the process is provided. | 2015-11-26 |
20150340549 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND LIGHT EMITTING APPARATUS - A semiconductor light emitting device includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, a first internal electrode, a second internal electrode, an insulating part, and first and second pad electrodes. The active layer is disposed on a first portion of the first conductive semiconductor layer, and has the second conductive layer disposed thereon. The first internal electrode is disposed on a second portion of the first conductive semiconductor layer separate from the first portion. The second internal electrode is disposed on the second conductive semiconductor layer. The insulating part is disposed between the first and second internal electrodes, and the first and second pad electrodes are disposed on the insulating part to connect to a respective one of the first and second internal electrodes. | 2015-11-26 |
20150340550 | METHOD OF PRODUCING LIGHT EMITTING DEVICE - A method of producing a light emitting device includes providing a light emitting element on a base member, the base member including an insulating member and a pair of connection terminals at least on an upper surface thereof. The connection terminals have an exposed portion exposed to outside, with the light emitting element electrically connected to the connection terminals. A covering member is disposed to cover at least a portion of the upper surface of the light emitting element, and a protective layer is disposed to cover at least a portion of the exposed portions of the connection terminals. The covering member is removed, and material from the upper surface side of the base member is supplied to dispose a light-transmissive member on the upper surface of the light emitting element. At least a portion of the light-transmissive member present on the protective layer is then removed. | 2015-11-26 |
20150340551 | SEMICONDUCTOR EPIAXIAL STRUCTURE AND LIGHT-EMITTING DEVICE THEREOF - The present invention discloses an epiaxial structure for semiconductor light-emitting device, comprising an electron injection region, a hole injection region, a multi-quantum well active region, a potential barrier layer for blocking carriers, and one or more band edge shaping layers. The doping type and/or doping concentration of said band edge shaping layers are different from those of the adjacent layers. It may trim the band edge shape of the semiconductor energy band through the local built-in electric field formed as a result of adjusting the doping type, doping concentration and/or layer thickness thereof, such that the carriers in the multi-quantum well active region are distributed uniformly, the overall Auger recombination is decreased, and the effective potential barrier height of the potential barrier layer for blocking carriers is increased to reduce the drain current formed by carriers overflowing out of the multi-quantum well active region, thereby improving internal quantum efficiency. The present invention further discloses a semiconductor light-emitting device that employs said epiaxial structure, which similarly achieves the effects of reduced Auger recombination and/or decreased drain current through the trimming of the band edge shape of the energy band structure by the local built-in electric field, thereby improving internal quantum efficiency of the device. | 2015-11-26 |
20150340552 | OPTOELECTRONIC DEVICE COMPRISING MICROWIRES OR NANOWIRES - The invention relates to an optoelectronic device comprising microwires or nanowires, each having at least one active portion ( | 2015-11-26 |
20150340553 | III-V Group Compound Devices with Improved Efficiency and Droop Rate - A photonic device includes: a first-type III-V group layer; a second-type III-V group layer formed on the first-type III-V group layer; and a multi-quantum well layer disposed between the first-type III-V group layer and the second-type III-V group layer; wherein: the multi-quantum well layer comprises a plurality of active layers interleaved with a plurality of barrier layers such that each barrier layer is separated from adjacent barrier layers by a respective one of the active layer; a material of each barrier layer comprises semiconductor compound devoid of Al element; the barrier layers comprises a first group layers between the first-type III-V group layer and the second-type III-V group layer and a second group layers between the second-type III-V group layer and the first group layers, and a thickness of each barrier layer of the first group layers is greater than that of each barrier layer of the second group layers; and the barrier layers of the first group layers comprise uniform thickness. | 2015-11-26 |
20150340554 | SERIES CONNECTED SEGMENTED LED - A light source and method for making the same are disclosed. The light source includes a conducting substrate, and a light emitting structure that is divided into segments. The light emitting structure includes a first layer of semiconductor material of a first conductivity type deposited on the substrate, an active layer overlying the first layer, and a second layer of semiconductor material of an opposite conductivity type from the first conductivity type overlying the active layer. A barrier divides the light emitting structure into first and second segments that are electrically isolated from one another. A serial connection electrode connects the first layer in the first segment to the second layer in the second segment. A power contact is electrically connected to the second layer in the first segment, and a second power contact electrically connected to the first layer in the second segment. | 2015-11-26 |
20150340555 | LIGHT EMITTING DEVICES HAVING DISLOCATION DENSITY MAINTAINING BUFFER LAYERS - A method for forming a light emitting device comprises forming a buffer layer having a plurality of layers comprising a substrate, an aluminum gallium nitride layer adjacent to the substrate, and a gallium nitride layer adjacent to the aluminum gallium nitride layer. During the formation of each of the plurality of layers, one or more process parameters are selected such that an individual layer of the plurality of layers is strained. | 2015-11-26 |
20150340556 | LIGHT EMITTING DIODE STRUCTURE - A light emitting diode structure is provided. The light emitting diode structure comprises a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer. | 2015-11-26 |
20150340557 | SHAPED LED FOR ENHANCED LIGHT EXTRACTION EFFICIENCY - The shape of a light emitting element | 2015-11-26 |
20150340558 | LIGHT EMITTING DIODE CHIP - A light emitting diode chip including a substrate and a light emitting diode element layer is provided. The substrate has a growth surface and a plurality of microstructures on the growth surface, wherein an area of the growth surface occupied by the microstructures is A1 and an area of the growth surface not occupied by the micro-structures is A2, wherein A1 and A2 satisfies the relation of 0.1≦A2/(A1+A2)≦0.5. The light emitting diode element layer is disposed on the growth surface of the substrate. | 2015-11-26 |
20150340559 | II-VI BASED LIGHT EMITTING SEMICONDUCTOR DEVICE - The invention provides a light emitting semi conductor device comprising a zinc magnesium oxide based layer as active layer, wherein the zinc magnesium oxide based layer comprises an aluminum doped zinc magnesium oxide layer having the nominal composition Zn-xMgxO with 1-350 ppm Al, wherein x is in the range of 02015-11-26 | |
20150340560 | PHOTOCONDUCTIVE ANTENNA, TERAHERTZ WAVE GENERATING DEVICE, CAMERA, IMAGING DEVICE, AND MEASURING DEVICE - A photoconductive antenna is adapted to generate terahertz waves when irradiated by pulsed light. The photoconductive antenna includes a semiconductor layer, a first conductive layer, a second conductive layer, a first electrode and a second electrode. The first conductive layer is disposed on a first surface of the semiconductor layer. The second conductive layer is disposed on the first surface of the semiconductor layer with a prescribed gap being formed between the first conductive layer and the second conductive layer. The first electrode is electrically connected to the first conductive layer. The second electrode is electrically connected to the second conductive layer. The first conductive layer contains a first conductive type impurity. The second conductive layer contains a second conductive type impurity. The semiconductor layer has a carrier density lower than a carrier density of the first conductive layer or a carrier density of the second conductive layer. | 2015-11-26 |
20150340561 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD OF PRODUCTION THEREOF - An optoelectronic semiconductor chip includes a semiconductor layer stack including a nitride compound semiconductor material on a carrier substrate, wherein the semiconductor layer stack includes an active layer that emits an electromagnetic radiation, the semiconductor layer stack being arranged between a layer of a first conductivity and a layer of a second conductivity, the layer of the first conductivity is adjacent a front of the semiconductor layer stack, the layer of the first conductivity electrically connects to a first electrical connection layer covering at least a portion of a back of the semiconductor layer stack, and the layer of the second conductivity type electrically connects to a second electrical connection layer arranged at the back. | 2015-11-26 |
20150340562 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - Embodiments provide a method of growing a p-type nitride semiconductor, and a light emitting device fabricated using the same. The method of growing a p-type nitride semiconductor includes growing a p-type nitride semiconductor layer on a growth substrate by introducing a group III element source, a group V element source, and a p-type dopant into a chamber at a first temperature; and cooling the interior of the chamber from the first temperature to a second temperature, wherein the p-type dopant is introduced into the chamber for at least some part of the cooling of the interior of the chamber from the first temperature to the second temperature. According to the present disclosed technology, it is possible to prevent diffusion of the p-type dopant from a p-type nitride semiconductor layer into the chamber. | 2015-11-26 |
20150340563 | CONTROL OF P-CONTACT RESISTANCE IN A SEMICONDUCTOR LIGHT EMITTING DEVICE - A device according to embodiments of the invention includes a semiconductor device structure ( | 2015-11-26 |
20150340564 | PROTECTIVE COMPOSITION - A protective composition for use in an optoelectronic device, said protective composition comprises an organometallic getter capable of reacting with sulfur and/or selenium to form crystals containing a metal and sulfur and/or selenium. The protective composition may form a layer or an optical component. Advantageously, the protective composition effectively removes sulfide gas and results in the formation of stable crystals, and does not merely reduce the permeation rate of the gas. The resulting crystals typically have high transparency and low light absorption. | 2015-11-26 |
20150340565 | LIGHT EMITTING MODULE - A light emitting module includes: a semiconductor light emitting element that emits light of a first color; a wavelength conversion layer that subjects at least a portion of the light of the first color to wavelength conversion and emits light of a second color; and a diffusing layer that diffuses at least one of the light of the first color and the light of the second color. The diffusing layer includes a matrix and a diffusing member distributed in the matrix. The wavelength conversion layer includes a wavelength conversion substance. A difference between a refractive index of the wavelength conversion layer and a refractive index of the matrix is 0.3 or less, and a difference between a refractive index of the matrix and a refractive index of the diffusing member is 0.05 or more. | 2015-11-26 |
20150340566 | LED WITH SHAPED GROWTH SUBSTRATE FOR SIDE EMISSION - An array of optical features is formed in a surface of a relatively thick growth substrate wafer. LED layers are epitaxially grown over the opposite surface of the growth substrate wafer. The LED layers include an active layer that emits light towards the growth substrate wafer. The resulting LED wafer is singulated to form individual LED dies having a growth substrate portion, wherein each growth substrate portion has at least one of the optical features. The optical features redirect a majority of light emitted from the active layer to exit the LED die through sidewalls of the growth substrate portion. The side-emitting LED die is mounted in a reflective cup and encapsulated with a phosphor material. The LED light thus energizes phosphor grains that are not overlying the LED die, so less phosphor light is absorbed by the LED die and efficiency is improved. | 2015-11-26 |
20150340567 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A method for producing a semiconductor light emitting device includes a light-emitting-element provision step, a light-emitting-element placement step, and a light-reflection-layer coating step, in this order. In the light-emitting-element provision step, a light emitting element is prepared which includes a semiconductor layer structure on the lower-surface side of a substrate. In the light-emitting-element placement step, the light emitting element is placed on or above a supporting member from the semiconductor layer structure side. In the light-reflection-layer coating step, the surfaces of the substrate and the semiconductor layer structure is coated with a light reflection layer by using atomic layer deposition so as to expose at least a part of the upper surface or a part of side surface of the substrate as a light-extracting region. The intended functioning of the light reflection layer can be ensured. The highly reliable light reflection layer can make the device good quality. | 2015-11-26 |
20150340568 | Carrier, Carrier Leadframe, And Light Emitting Device - A carrier leadframe, including a frame body and a carrier, is provided. The frame body includes at least one supporting portion, and the carrier includes a shell and at least one electrode portion and is mechanically engaged with the frame body via the supporting portion. A method for manufacturing the carrier leadframe as described above, as well as a light emitting device made from the carrier leadframe and a method for manufacturing the device, are also provided. The carrier leadframe has carriers that are separate in advance and mechanically engaged with the frame body, thereby facilitating the quick release of material after encapsulation. Besides, in the carrier leadframe as provided, each carrier is electrically isolated from another carrier, so the electric measurement can be performed before the release of material. Therefore, the speed and yield of production of the light emitting device made from the carrier leadframe is improved. | 2015-11-26 |
20150340569 | LIGHT EMITTING DEVICE - A light emitting device has a base body equipped with a base material and a pair of connection terminals disposed from a first main face to a second main face that is on the opposite side from the first main face; a light emitting element connected to the connection terminals on the first main face; and a light reflecting member that covers the side faces of the light emitting element, the base material having a protruding component on the second main face, and the connection terminals being disposed on the first main face from the second main face on both sides of the protruding component, and being partly exposed from the light reflecting member on both sides of the first main face. | 2015-11-26 |
20150340570 | SLIM LED PACKAGE - Disclosed herein is a slim LED package. The slim LED package includes first and second lead frames separated from each other, a chip mounting recess formed on one upper surface region of the first lead frame by reducing a thickness of the one upper surface region below other upper surface regions of the first lead frame, an LED chip mounted on a bottom surface of the chip mounting recess and connected with the second lead frame via a bonding wire, and a transparent encapsulation material protecting the LED chip while supporting the first and second lead frames. | 2015-11-26 |
20150340571 | WAVELENGTH CONVERSION MEMBER AND LIGHT-EMITTING DEVICE - A wavelength conversion member which is a resin-molded article made of at least one type of thermoplastic resin selected from polyolefins, polystyrene, styrene copolymers, fluorocarbon resins, acrylic resins, nylons, polyester resins, polycarbonate resins, vinyl chloride resins, and polyether resins. The thermoplastic resin contains less than or equal to 30 mass % of a complex fluoride fluorophore represented by A | 2015-11-26 |
20150340572 | MOLDED PACKAGE FOR LIGHT EMITTING DEVICE - The present invention provides a molded package for a light emitting device including a molded resin and first and second leads, the exposed surface of the first lead having a first and second edge portions opposed to each other so as to put a mounting area therebetween in a first direction, the first and second edge portions respectively having one first cutout and second cutouts, the mounting area having a size not less than a distance between the first and the second cutouts and less than a distance between the first the second edge portions in the first direction. | 2015-11-26 |
20150340573 | MATERIALS FOR PHOTOLUMINESCENCE WAVELENGTH CONVERTED SOLID-STATE LIGHT EMITTING DEVICES AND ARRANGEMENTS - A photoluminescence material paste comprises: a first inorganic photoluminescence material having a first density, a second inorganic photoluminescence material having a second density and a light transmissive non-curable silicone fluid that is not curable by itself. The first density of the first inorganic photoluminescence material is different from the second density of the second inorganic photoluminescence material. The first and second inorganic photoluminescence materials are substantially homogenously distributed within the light transmissive non-curable silicone fluid to form the photoluminescence material paste. A weight loading of the first and second photoluminescence materials in the photoluminescence material paste is in a range of about 60% to about 95%. | 2015-11-26 |
20150340574 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - The light emitting device is manufactured by processing that includes forming encapsulating member at least on the upper surface and upper surface perimeter of a light emitting element, removing at least the part of the encapsulating member that is on upper surface of the light emitting element and form a cavity with a perimeter that surrounds the light emitting element, and forming a wavelength-conversion layer inside the cavity to convert the wavelength of light emitted from the light emitting element. | 2015-11-26 |
20150340575 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate having a first main surface that serves as the light extraction surface, a second main surface that is opposite the first main surface, and a mounting surface that is adjacent to at least the second main surface, and that is provided an insulating base material, a pair of connection terminals disposed on the second main surface, and a heat dissipation terminal disposed on the second main surface and between the pair of connection terminals; a light emitting element that is mounted on the first main surface of the substrate and; a sealing member that seals the light emitting element and is formed substantially in the same plane as the substrate on the mounting surface. | 2015-11-26 |
20150340576 | LIGHT-EMITTING DEVICE, ILLUMINATION DEVICE AND BACKLIGHT FOR DISPLAY DEVICE - An LED chip ( | 2015-11-26 |
20150340577 | METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE - A manufacturing method of a light emitting device includes a light emitting element disposed over a substrate and a reflective resin disposed along the side surface of the light emitting element. The method includes disposing light emitting elements in a matrix over an aggregate substrate, and disposing a semiconductor element between the adjacent light emitting elements in one direction of column and row directions of the light emitting elements in the matrix. A reflective resin is disposed to cover the semiconductor elements along the side surfaces of the light emitting elements and the side surfaces of the phosphor layers. The reflective resin and the substrate disposed in between the adjacent light emitting elements is cut in the column or row direction and between the light emitting element and the adjacent semiconductor element in the other direction, to include a light emitting element or a semiconductor element. | 2015-11-26 |
20150340578 | LIGHT EMITTING DEVICE - A light emitting device including; a base body having a base material that includes a first main face that has a lengthwise direction and a short-side direction that is perpendicular to the lengthwise direction, a second main face on the opposite side from the first main face, a first end face that extends in the lengthwise direction, and a second end face that extends in the short-side direction, and connection terminals that are provided on the first main face of the base material; and a light emitting element that is installed on the first main face and is connected to the connection terminals, the first end face of the base material has a recess that is contiguous with the first main face and the second end face and/or is contiguous with the second main face and the second end face, a length of the recess in a lengthwise direction is greater than a depth in a short-side direction, and the connection terminals are provided extending over the recess. | 2015-11-26 |
20150340579 | WAFER-LEVEL LIGHT EMITTING DIODE PACKAGE AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention provide a wafer-level light emitting diode (LED) package and a method of fabricating the same. The LED package includes a semiconductor stack including a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer; a plurality of contact holes arranged in the second conductive type semiconductor layer and the active layer, the contact holes exposing the first conductive type semiconductor layer; a first bump arranged on a first side of the semiconductor stack, the first bump being electrically connected to the first conductive type semiconductor layer via the plurality of contact holes; a second bump arranged on the first side of the semiconductor stack, the second bump being electrically connected to the second conductive type semiconductor layer; and a protective insulation layer covering a sidewall of the semiconductor stack. | 2015-11-26 |
20150340580 | LIGHT EMITTING DEVICE AND LIGHTING APPARATUS HAVING THE SAME - Disclosed are a light emitting device. The light emitting device include first and second lead frames, a first body on the first and second lead frames and including an open region, a second body on the first body and including a first opening, a light emitting chip on the opening region, and a transmissive layer on the light emitting chip. The first body and the second body are formed of a resin material. A top surface of the first body is located at a position lower than a position of a top surface of the light emitting chip. The second body includes a bottom surface located at a position lower than the position of the top surface of the light emitting chip. The first body comprises an inclined part around the light emitting chip. The first body includes a reflectance material and the second body includes a transmissive material. | 2015-11-26 |
20150340581 | LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A light emitting diode includes: at least one light emitting chip; a substrate including lead frames electrically connected to electrodes of the at least one light emitting chip; a lens disposed on the substrate and enclosing the at least one light emitting chip; and an oil disposed in the lens and the substrate. | 2015-11-26 |
20150340582 | THERMOELECTRIC CONVERSION MODULE - A thermoelectric conversion module is disclosed that corrects the difference in thermal resistance between a P-type thermoelectric conversion member and an N-type thermoelectric conversion member. In this thermoelectric conversion module, since insulators included in the P-type thermoelectric conversion member and the N-type thermoelectric conversion member have a different thermal resistance, it is possible to correct the difference in thermal resistance between the P-type thermoelectric conversion element and the N-type thermoelectric conversion element. | 2015-11-26 |
20150340583 | SEEBECK/PELTIER THERMOELECTRIC CONVERSION ELEMENT WITH PARALLEL NANOWIRES OF CONDUCTOR OR SEMICONDUCTOR MATERIAL ORGANIZED IN ROWS AND COLUMNS THROUGH AN INSULATING BODY AND PROCESS - A novel and effective structure of a stackable element (A | 2015-11-26 |
20150340584 | SUSPENDED SUPERCONDUCTING QUBITS - A qubit system includes a substrate layer, a qubit circuit suspended above the substrate layer and fine structure disposed between the qubit circuit and the substrate layer. | 2015-11-26 |
20150340585 | DRIVING APPARATUS OF PIEZO ACTUATOR AND METHOD OF DRIVING THE SAME - A driving apparatus of a piezo actuator may include: a frequency controlling unit generating a driving frequency signal by sweeping a natural vibration frequency, and a piezo driving unit driving the piezo actuator according to the driving frequency signal by providing the driving frequency signal to the piezo actuator. The driving frequency signal may be in the range of ±5% of the natural vibration frequency. | 2015-11-26 |
20150340586 | SURGICAL GENERATOR FOR ULTRASONIC AND ELECTROSURGICAL DEVICES - A method for controlling a waveform shape of a motional branch current in an ultrasonic transducer of a surgical device. The method may comprise generating a transducer drive signal by selectively recalling, using a direct digital synthesis (DDS) algorithm, drive signal waveform samples stored in a look-up table (LUT), generating samples of current and voltage of the transducer drive signal when the transducer drive signal is communicated to the surgical device, determining samples of the motional branch current based on the current and voltage samples, a static capacitance of the ultrasonic transducer and a frequency of the transducer drive signal, comparing each sample of the motional branch current to a respective target sample of a target waveform to determine an error amplitude, and modifying the drive signal waveform samples stored in the LUT such that an amplitude error between subsequent samples of the motional branch current and respective target samples is reduced. | 2015-11-26 |
20150340587 | ACOUSTIC WAVE DEVICE - An acoustic wave device includes: an IDT provided on a piezoelectric substrate; and gratings provided on both sides of the IDT, wherein: a slowness surface of an acoustic wave has a concave shape; a duty ratio of electrode fingers of the gratings is larger than that of the electrode fingers of the IDT, or a thickness of the electrode fingers of the gratings is larger than that of the electrode fingers of the IDT, or a thickness of an added film provided on the electrode fingers of the gratings is larger than that of an added film provided on the electrode fingers of the IDT; a pitch of the electrode fingers of the gratings is smaller than that of the electrode fingers of the IDT; and a resonant frequency of the gratings is substantially the same as that of the IDT. | 2015-11-26 |
20150340588 | ANGULAR VELOCITY SENSOR - In a piezoelectric element, a piezoelectric film, a first electrode film provided on one surface of the piezoelectric film, and a second electrode film provided on the other surface of the piezoelectric film form a layered structure, an outer contour of the first electrode film and an outer contour of the second electrode film are positioned outside an outer contour of the piezoelectric film as viewed in a layering direction, an organic resin film is in contact with the piezoelectric film, and generation of noise is suppressed. | 2015-11-26 |
20150340589 | MULTILAYER PIEZOELECTRIC DEVICE - A multilayer piezoelectric device comprises a multilayer body and first and second outer electrodes. The multilayer body has base, first and second driving parts, and non-driving part. The driving parts and non-driving part extend from the base along stacking direction. The first driving part is closer to the non-driving part than the second driving part. Each driving part has first and second inner electrodes opposing each other in stacking direction. The base has a third inner electrode extending along a plane orthogonal to the stacking direction. The first outer electrode is connected to the first inner electrode. The second outer electrode is connected to the second and third inner electrodes. In the stacking direction, the overlap area of the third and second inner electrode of the first driving part is greater than the overlap area of the third and second inner electrode of the second driving part. | 2015-11-26 |
20150340590 | VIBRATION SYSTEMS AND METHODS - In one arrangement, a vibration system includes a vibratable plate, a support member surrounding the vibratable plate, and a vibration-inducing member surrounding the support member. The vibration-inducing member is configured to radially expand and contract against the support member so as to produce axial vibration of the vibratable plate. In another arrangement, the vibratable plate has an outer circumference; a tubular member is concentrically disposed about the outer circumference of the plate, and an annular vibration-inducing member is concentrically disposed about the outer circumference of the tubular member. The vibration-inducing member is preferably a piezoelectric ring that is radially expandable and contractable against the wall of the tubular member to cause the plate to vibrate in the axial direction. | 2015-11-26 |
20150340591 | HIGH TEMPERATURE SENSORS AND TRANSDUCERS - A high temperature piezoelectric sensor device such as a high temperature accelerometer, force sensor, pressure sensor, temperature sensor, acoustic sensor and/or acoustic transducer for use at temperatures up to 1000° C. The high temperature device includes a base, a piezoelectric element attached to the base and a pair of electrodes in electrical communication with the piezoelectric element. The piezoelectric element can have a d | 2015-11-26 |
20150340592 | Method and Device for Producing a Multi-Layer Electrode System - A method for producing a multi-layer electrode system includes providing a carrier substrate having a recess in a top side of the carrier substrate. At least one wall of the recess is inclined in relation to a bottom side of the carrier substrate, which is opposite to the top side. The method also includes applying a multi-layer stack, which includes at least a first electrode layer, a second electrode layer, and a piezoelectric layer arranged between the first electrode layer and the second electrode layer, to the top side of the carrier substrate. At least the wall and a bottom of the recess are covered by at least a portion of the multi-layer stack. | 2015-11-26 |
20150340593 | ETCH-RESISTANT PROTECTIVE COATING FOR A MAGNETIC TUNNEL JUNCTION DEVICE - A method of forming a magnetic tunnel junction (MTJ) device includes forming a spacer on an exposed side portion of the MTJ device. The method further includes forming an etch-resistant protective coating associated with the MTJ device. The etch-resistant protective coating provides greater etch resistance than the spacer. | 2015-11-26 |
20150340594 | Anisotropic Magnetoresistive Device and Method for Fabricating the Same - The present invention relates to an anisotropic magnetoresistive (AMR) device which comprises a substrate, an interconnect structure and a magnetoresistive material layer. The interconnect structure is disposed above the substrate and comprises a plurality of metal interconnect layers. The magnetoresistive material layer is disposed above the interconnect structure. The topmost metal interconnect layer of the plurality of metal interconnect layers comprises a conductive current-shunting structure. The conductive current-shunting structure is physically connected to the magnetoresistive layer without a conductive via plug. | 2015-11-26 |
20150340595 | SPIN TRANSFER TORQUE MAGNETIC MEMORY DEVICE USING MAGNETIC RESONANCE PRECESSION AND THE SPIN FILTERING EFFECT - The present invention relates to a magnetic memory device which additionally comprises a free magnetic layer constituting a horizontal direction variable magnetization layer having a fixed saturation magnetization value, whereby a switching current is markedly reduced as compared with conventional magnetic layers such that a high degree of integration of the device can be achieved and it is possible to lower a critical current density necessary for magnetization reversal thereby reducing the power consumption of the device. Also, a stray field effect occurring from a fixed magnetic layer is reduced such that a written magnetization data is thermally stable. | 2015-11-26 |
20150340596 | Magnetic Tunnel Junction Device - A device includes creating an opening in a dielectric layer that is disposed over a bottom electrode layer. A top electrode layer is disposed over the dielectric layer. A magnetic tunnel junction (MTJ) layer is formed in the opening over the bottom electrode layer. | 2015-11-26 |
20150340597 | MAGNETORESISTIVE ELEMENT HAVING ENHANCED EXCHANGE BIAS AND THERMAL STABILITY FOR SPINTRONIC DEVICES - Magnetic element including a first magnetic layer having a first magnetization; a second magnetic layer having a second magnetization; a tunnel barrier layer between the first and the second magnetic layers; and an antiferromagnetic layer exchanged coupling the second magnetic layer such that the second magnetization is pinned below a critical temperature of the antiferromagnetic layer, and can be freely varied when the antiferromagnetic layer is heated above that critical temperature. The magnetic element also includes an oxygen gettering layer between the second magnetic layer and the antiferromagnetic layer, or within the second magnetic layer. The magnetic element has reduced insertion of oxygen atoms in the antiferromagnetic layer and possibly reduced diffusion of manganese in the second magnetic layer resulting in an enhanced exchange bias and/or enhanced resistance to temperature cycles and improved life-time. | 2015-11-26 |
20150340598 | MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE - The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving a first type sublayer and a second type sublayer to form one or more repeats of a unit bilayer structure and a first magnetic layer formed on top of the multilayered seed structure. The unit bilayer structure is made of the first and second type sublayers with at least one of the first and second type sublayers including therein one or more ferromagnetic elements. The multilayered seed structure may be amorphous or non-magnetic or both. The unit bilayer structure may be made of CoFeB and Ta sublayers. | 2015-11-26 |
20150340599 | MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE - The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving a first type sublayer and a second type sublayer to form one or more repeats of a unit bilayer structure and a first magnetic layer formed on top of the multilayered seed structure. The unit bilayer structure is made of the first and second type sublayers with at least one of the first and second type sublayers including therein one or more ferromagnetic elements. The multilayered seed structure may be amorphous or non-magnetic or both. The unit bilayer structure may be made of CoFeB and Ta sublayers. | 2015-11-26 |
20150340600 | MAGNETIC DEVICE - A magnetic device includes a free layer including a first magnetization layer; a pinned layer including a second magnetization layer; and a tunnel barrier layer provided between the free layer and the pinned layer. At least one selected from the free layer and the pinned layer includes a synthetic antiferromagnetic (SAF) structure formed of a first ferromagnetic layer, a second ferromagnetic layer, and a ruthenium-rhodium (Ru—Rh) alloy layer provided between the first and second ferromagnetic layers. | 2015-11-26 |
20150340601 | MAGNETIC RANDOM ACCESS MEMORY WITH MULTILAYERED SEED STRUCTURE - The present invention is directed to a magnetic random access memory element that includes a multilayered seed structure formed by interleaving a first type sublayer and a second type sublayer to form one or more repeats of a unit bilayer structure and a first magnetic layer formed on top of the multilayered seed structure. The unit bilayer structure is made of the first and second type sublayers with at least one of the first and second type sublayers including therein one or more ferromagnetic elements. The multilayered seed structure may be amorphous or non-magnetic or both. The unit bilayer structure may be made of CoFeB and Ta sublayers. | 2015-11-26 |
20150340602 | METHOD TO FORM SMALL MRAM CELL BY COLLIMATED OXYGEN ION IMPLANTATION - A method to form a small magnetic random access memory (MRAM) cell using collimated oxygen ion implantation is provided. With a proper control of the bias voltage and collimation angle, oxygen ions are impinged into the magnetic memory layers with a desired energy and bombardment angle, yielding a sharp oxygen boundary around the memory cell. After a high temperature anneal, a dielectric matrix with good metal-oxide bonding is formed within the oxygen implanted memory region and thus forming a small MRAM cell in the mask protected area. | 2015-11-26 |
20150340603 | METHOD TO ETCH NON-VOLATILE METAL MATERIALS - A method for etching a stack with at least one metal layer in one or more cycles is provided. An initiation step is preformed, transforming part of the at least one metal layer into metal oxide, metal halide, or lattice damaged metallic sites. A reactive step is performed providing one or more cycles, where each cycle comprises providing an organic solvent vapor to form a solvated metal, metal halide, or metal oxide state and providing an organic ligand solvent to form volatile organometallic compounds. | 2015-11-26 |
20150340604 | SEMICONDUCTOR DEVICE, RELATED MANUFACTURING METHOD, AND RELATED ELECTRONIC DEVICE - A method for manufacturing a semiconductor device may include the following steps: preparing a substrate; preparing a first insulating layer on the substrate; preparing an electrode in the first insulating layer; preparing a second insulating layer on the first insulating layer; removing (e.g., using a dry etching process or a wet etching process) a portion of the second insulating layer to form a hole that at least partially exposes the electrode; providing a phase change material layer that may cover the electrode; and removing (e.g., using a sputtering process such as an argon sputtering process), a portion of the phase change material layer positioned inside the hole to form a phase change member that may expose a first portion of (a top side of) the electrode and may directly contact a second portion of (the top side of) the electrode. | 2015-11-26 |
20150340605 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device according to an embodiment includes two electrodes and two semiconductor layers. The two electrodes extend in a first direction. The two semiconductor layers are placed between the two electrodes, are spaced from each other in the first direction, and extend in a second direction orthogonal to the first direction. The two electrodes include extending parts extending out so as to come close to each other. In a cross section orthogonal to the second direction, the extending parts extend into a region interposed between a pair of tangent lines. The pair of tangent lines tangent to both the two semiconductor layers and do not cross each other. | 2015-11-26 |
20150340606 | SWITCHING ELEMENT AND METHOD FOR FABRICATING SEMICONDUCTOR SWITCHING DEVICE - In switching elements each using a two-terminal-type variable resistance element, improper writing or any improper operation is often caused and the reliability of the switching elements cannot be improved easily. A switching element according to the present invention is equipped with a first variable resistance element equipped with a first input/output terminal and a first connection terminal, a second variable resistance element equipped with a second input/output terminal and a second connection terminal, and a rectifying element equipped with a control terminal and a third connection terminal, wherein the first connection terminal, the second connection terminal and the third connection terminal are connected to one another. | 2015-11-26 |
20150340607 | PHASE TRANSITION DEVICES AND SMART CAPACITIVE DEVICES - Phase transition devices may include a functional layer made of functional material that can undergo a change in conductance in response to an external stimulus such as an electric or magnetic or optical field, or heat. The functional material transitions between a conducting state and a non-conducting state, upon application of the external stimulus. A capacitive device may include a functional layer between a top electrode and a bottom electrode, and a dielectric layer between the functional layer and the top electrode. A three terminal phase transition switch may include a functional layer, for example a conductive oxide channel, deposited between a source and a drain, and a gate dielectric layer and a gate electrode deposited on the functional layer. An array of phase transition switches and/or capacitive devices may be formed on a substrate, which may be made of inexpensive flexible material. | 2015-11-26 |
20150340608 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE INCLUDING THE SAME - A semiconductor device includes a first conductive layer, a second conductive layer spaced from the first conductive layer, a variable resistance layer interposed between the first and second conductive layers, and an impurity-doped layer provided over a side surface of the variable resistance layer. The variable resistance layer has a smaller width than the first and the second conductive layers. | 2015-11-26 |
20150340609 | SWITCHING ELEMENT AND METHOD FOR MANUFACTURING SWITCHING ELEMENT - The present invention provides a non-volatile switching element that can be applied to a programmable-logic wiring changeover switch and in which an electrochemical reaction is used. Of the two electrodes for applying a bias voltage to the variable resistance layer of the non-volatile switching element, the electrode that does not feed metal ions to the variable resistance layer when the switch is in the ON state is made from a ruthenium alloy. The ruthenium alloy includes ruthenium and a metal in which the standard Gibbs energy of forming ΔG when metal ions are generated from the metal is higher in the negative direction than ΔG of ruthenium. As a result, it becomes possible to maintain the low-resistance state in the ON state for a longer period of time without increasing the amount of electrical current required when a switch is made between the ON state and the OFF state. | 2015-11-26 |
20150340610 | VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF MANUFACTURING THE SAME - A variable resistance memory device includes first conductive lines extending in a first direction, second conductive lines over the first conductive lines, which extend in a second direction not parallel to the first direction, memory cells including a variable resistance element, each of which is formed at an intersection of the first and second conductive lines, first insulation layer patterns extending in the first direction between the memory cells, second insulation layer patterns extending in the second direction between the memory cells, first thermal barrier layer patterns extending in the first direction, which is spaced apart from the memory cells in the second direction between the first insulation layer patterns, and second thermal barrier layer patterns extending in the second direction, which is spaced apart from the memory cells in the first direction between the second insulation layer patterns. | 2015-11-26 |
20150340611 | METHOD FOR A DRY EXHUMATION WITHOUT OXIDATION OF A CELL AND SOURCE LINE - Various embodiments of the present invention are directed to a method for fabricating a memory cell comprising performing a passivation step on a cell structure and cell source lines prior to exhuming a masking layer to prevent oxidation of the cell structure and source lines. | 2015-11-26 |
20150340612 | UV EMITTERS COMPRISING A MULTIPLE BOND - The invention relates to organic electroluminescent devices comprising organic compounds with a double or triple bond, to which at least one aromatic ring is bonded, as emitter compounds. The invention also relates to possible uses of said devices. | 2015-11-26 |
20150340613 | COMPOUNDS FOR ELECTRONIC DEVICES - The present invention relates to compounds of the formula (I) and to the use thereof in organic electronic devices, and to organic electronic devices which comprise compounds of the formula (I), preferably as hole-transport materials and/or as matrix materials, in particular in combination with a further matrix material. | 2015-11-26 |
20150340614 | BINUCLEAR METAL(I) COMPLEXES FOR OPTOELECTRONIC APPLICATIONS - Metal(I) complexes of the M | 2015-11-26 |
20150340615 | DONOR MASK AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS USING THE SAME - A method of manufacturing an organic light emitting display apparatus using a donor mask. The donor mask includes a base substrate, a light to heat conversion layer provided on the base substrate, and a reflection layer disposed between the base substrate and the light to heat conversion layer and comprising a through hole corresponding to a first transfer region, a non-transfer region having a first thickness and a second transfer region having a second thickness smaller than the first thickness, and the organic light emitting display apparatus using the same. | 2015-11-26 |
20150340616 | Polymer comprising a thiadiazol group, the production of such polymer and its use in organic electronic devices - The present invention relates to a novel polymer comprising a thiadiazol group, the production of such a polymer, its use in organic electronic devices as well as such organic electronic devices. | 2015-11-26 |
20150340617 | Carbon Nanotube-Graphene Hybrid Transparent Conductor and Field Effect Transistor - A nanotube-graphene hybrid nano-component and method for forming a cleaned nanotube-graphene hybrid nano-component. The nanotube-graphene hybrid nano-component includes a gate; a gate dielectric formed on the gate; a channel comprising a carbon nanotube-graphene hybrid nano-component formed on the gate dielectric; a source formed over a first region of the carbon nanotube-graphene hybrid nano-component; and a drain formed over a second region of the carbon nanotube-graphene hybrid nano-component to form a field effect transistor. | 2015-11-26 |
20150340618 | LUMINESCENT MATERIAL FOR ORGANIC OPTOELECTRIC DEVICE AND ORGANIC OPTOELECTRIC DEVICE AND DISPLAY DEVICE - Disclosed are a luminescent material for an organic optoelectric device represented by Chemical Formula 1, an organic optoelectric device including the luminescent material for an organic optoelectric device, and a display device including the organic optoelectric device. | 2015-11-26 |
20150340619 | Electronic Device - The present application relates to an electronic device having defined composition of the emitting layer. The application furthermore relates to the use of the device in displays or in lighting applications. | 2015-11-26 |
20150340620 | NOVEL COMPOUND AND ORGANIC ELECTRONIC ELEMENT USING SAME - The present specification relates to an organic electronic device in which a new compound, which can improve the life span, the efficiency, the electrochemical stability and the thermal stability of the organic electronic device, is included in an organic material layer. | 2015-11-26 |
20150340621 | ORGANIC ELECTROLUMINESCENT DEVICE - The present invention relates to organic electroluminescent devices which comprise mixtures of at least two electron-conducting materials, in particular as matrix for phosphorescent emitters. | 2015-11-26 |
20150340622 | Heterocyclic Compound, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - Provided is a novel heterocyclic compound, a novel heterocyclic compound that can be used in a light-emitting element, or a highly reliable light-emitting device, electronic device, and lighting device in each of which the light-emitting element using the novel heterocyclic compound is used. One embodiment of the present invention is a heterocyclic compound represented by General Formula (G1). | 2015-11-26 |
20150340623 | ORGANIC ELECTROLUMINESCENT ELEMENT - An organic electroluminescence device includes an anode, a cathode and an emitting layer, in which the emitting layer includes a first compound and a second compound and each of the first compound and the second compound is a compound emitting thermally activated delayed fluorescence. | 2015-11-26 |
20150340624 | ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL - An organic thin film transistor containing a compound represented by one of the following formulae in a semiconductor active layer has a high carrier mobility and a small change in the threshold voltage after repeated driving. X represents S or O, and at least one of R | 2015-11-26 |
20150340625 | ORGANIC THIN FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL - An organic thin film transistor containing a compound represented by one of the following formulae in a semiconductor active layer has a high carrier mobility and a small change in the threshold voltage after repeated driving. X represents S or O, Z represents a substituent having a length of 3.7 Å or less, and at least one of R | 2015-11-26 |
20150340626 | ORGANIC COMPOUND, COMPOSITION, ORGANIC OPTOELECTRIC DEVICE, AND DISPLAY DEVICE - An organic compound, a composition for an organic optoelectric device, and a display device, the compound being represented by the following Chemical Formula 1: | 2015-11-26 |