47th week of 2013 patent applcation highlights part 16 |
Patent application number | Title | Published |
20130306924 | MANUAL MARINE WINCH WITH SAFETY KNOCKOUT OVERRIDE PREVENTING RELEASE OF WINCH TENSION WITHOUT THE HANDLE IN THE STOWED POSITION - A manual marine winch includes a safety knockout override preventing release of winch tension without the handle in stowed position. The winch includes a housing; a rotating drum on the housing; a winch line on the drum; a control for spooling and un-spooling the winch line on the drum, wherein the control includes a handle for selectively tensioning the drum and moveable between a position engaged with the drum and a disengaged stowed position; a tension holding mechanism on the housing comprising a ratchet gear coupled to the drum, a pawl selectively engaged with the ratchet gear, and a knockout configures to selectively disengage the pawl from the gear to allow for release of winch tension; and a safety knockout override coupled to the housing and selectively engaged by the handle and configured to prevent release of winch tension when the handle is not in the stowed position. | 2013-11-21 |
20130306925 | LIFTING SYSTEM FOR DISPLAY CASES - A device for moving store display cases or gondolas which are elevated above a support surface by support posts. The device features a body supported for rolling on the support surface by at least one rotationally engaged wheel. The body has an upper surface dimensioned for an engagement with an underside of said horizontal support member supported by a support post which maintains the support post elevated from the support surface to allow a rolling of the display case or gondola on the wheel of the body. The wheel may have a circumferential edge having rotational rollers rotating traverse to the direction of rotation of the wheel, thereby allowing rolling of the body and supported display, in four directions without steering the wheel. | 2013-11-21 |
20130306926 | BARRIER AND BARRIER POST THEREFOR - A barrier including a series of barrier posts arranged relative to one another to control the movement of people, animals and motor vehicles. The barrier herein disclosed has particular application for use at a golf course. A first end of a containment belt is attached to a spring that is located within a spring housing carried by a first barrier post. The opposite end of the containment belt has a tab to be releasably attached to a hook which projects from an adjacent barrier post so that the containment belt extends between the first and adjacent barrier posts. In one embodiment, the spring housing is located inside the first barrier post. In another embodiment, the spring housing is detachably connected to the barrier post. | 2013-11-21 |
20130306927 | ATOMIC LAYER DEPOSITION OF A METAL CHALCOGENIDE MATERIAL AND RELATED MEMORY CELLS AND METHODS OF FORMING MEMORY CELLS - A method of forming a metal chalcogenide material. The method comprises introducing a metal precursor and a chalcogenide precursor into a chamber, and reacting the metal precursor and the chalcogenide precursor to form a metal chalcogenide material on a substrate. The metal precursor is a carboxylate of an alkali metal, an alkaline earth metal, a transition metal, a post-transition metal, or a metalloid. The chalcogenide precursor is a hydride, alkyl, or aryl precursor of sulfur, selenium, or tellurium or a silylhydride, silylalkyl, or silylaryl precursor of sulfur, selenium, or tellurium. Methods of forming a memory cell including the metal chalcogenide material are also disclosed, as are memory cells including the metal chalcogenide material. | 2013-11-21 |
20130306928 | ELECTRICALLY CONTROLLED OPTICAL FUSE AND METHOD OF FABRICATION - Embodiments of the present invention provide an electrically controlled optical fuse. The optical fuse is activated electronically instead of by the light source itself. An applied voltage causes the fuse temperature to rise, which induces a transformation of a phase changing material from transparent to opaque. A gettering layer absorbs excess atoms released during the transformation. | 2013-11-21 |
20130306929 | Multilayer-Stacked Phase Change Memory Cell - A multilayer-stacked phase change memory (PCM) device is provided that includes a substrate that is electrically insulative and thermally conductive, a number (n) of PCM layers deposited on the substrate, where each PCM layer is thicker than a previous PCM layer, a number (n−1) layers of passivation layer deposited between the PCM layers, where the (n) PCM layers, and the (n−1) passivation layers form a stacked multi-layer PCM on the substrate, a first electrode deposited on a first side of the multi-layer PCM stack, and a second electrode deposited on a second side of the multi-layer PCM stack, where the first side is opposite the second side, where charge transport is decoupled by stacking the PCM layers with the pasivation layers. | 2013-11-21 |
20130306930 | Memory Cells - Some embodiments include memory cells. A memory cell may contain a switching region and an ion source region between a pair of electrodes. The switching region may be configured to reversibly retain a conductive bridge, with the memory cell being in a low resistive state when the conductive bridge is retained within the switching region and being in a high resistive state when the conductive bridge is not within the switching region. The memory cell may contain an ordered framework extending across the switching region to orient the conductive bridge within the switching region, with the framework remaining within the switching region in both the high resistive and low resistive states of the memory cell. | 2013-11-21 |
20130306931 | Sidewall Thin Film Electrode with Self-Aligned Top Electrode and Programmable Resistance Memory - A memory device includes an array of electrodes that includes thin film plates of electrode material. Multilayer strips are arranged as bit lines over respective columns in the array of electrodes, including a layer of memory material and a layer of top electrode material. The multilayer strips have a primary body and a protrusion having a width less than that of the primary body and is self-aligned with contact surfaces on the thin film plates. Memory material in the protrusion contacts surfaces on the distal ends of thin film plates of electrodes in the corresponding column in the array. The device can be made using a damascene process in self-aligned forms over the contact surfaces. | 2013-11-21 |
20130306932 | NONVOLATILE RESISTANCE CHANGE ELEMENT - According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode, a semiconductor layer and a first layer. The first electrode includes at least one of Ag, Ni, Co, Al, Zn, Ti, and Cu. The semiconductor layer is sandwiched between the first and second electrodes. The first layer is provided between the second electrode and the semiconductor layer and contains an element included in the semiconductor layer and at least one of Ag, Ni, and Co. | 2013-11-21 |
20130306933 | Nonvolatile Memory Cells and Arrays of Nonvolatile Memory Cells - A nonvolatile memory cell includes first and second electrodes. Programmable material and a select device are received in series between and with the first and second electrodes. Current conductive material is in series between and with the programmable material and the select device. An array of vertically stacked tiers of such nonvolatile memory cells is disclosed. Methods of forming arrays of nonvolatile memory cells are disclosed. | 2013-11-21 |
20130306934 | BIOSENSOR COMPRISING REDUCED GRAPHENE OXIDE LAYER - The present invention relates to a horizontal biosensor, comprising a reduced graphene oxide layer formed on a substrate; a molecular linker formed on the reduced graphene oxide layer; and a metal nanoparticle layer formed on the molecular linker. | 2013-11-21 |
20130306935 | DOUBLE GATE PLANAR FIELD EFFECT TRANSISTORS - A transistor device includes multiple planar layers of channel material connecting a source region and a drain region, where the planar layers are formed in a stack of layers of a channel material; and a gate conductor formed around and between the planar layers of channel material. | 2013-11-21 |
20130306936 | OPTIMIZED ARRANGEMENT OF TRIAZOLE PARTICLES - An electrical device in provided having two electrodes separated from one another, wherein one temperature controlled electronic spin-state transition particle is in direct contact with each of the two electrodes, the particle being of the ionic type and containing a transition metal bearing a cationic charge. | 2013-11-21 |
20130306937 | 3D NANO-ELECTRO-MECHANICAL MULTIPLE-STATE CARBON NANOTUBE DEVICE STRUCTURES AND METHODS OF FABRICATION - A 3D M-CNT structure with at least one tri-state CNT NEM switch comprising at least an electrode as a source, an electrode as a gate and an electrode as a drain, a conductive carbon nanotube which is able to take three positions depending on a voltage application to said electrodes. | 2013-11-21 |
20130306938 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting apparatus includes a thin film transistor (TFT) including an active layer, a gate electrode, and source and drain electrodes, an organic light-emitting device including a pixel electrode connected to the TFT, an intermediate layer including an emissive layer, and an opposite electrode, an opposite electrode contact portion connecting the opposite electrode to a power interconnection line. The power interconnection line connected to the opposite electrode contact portion includes a first interconnection layer and a second interconnection layer which are stacked without an insulating layer therebetween. | 2013-11-21 |
20130306939 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a thin film transistor having an active layer, a gate electrode, and source and drain electrodes, an organic light-emitting device having a pixel electrode connected to the thin film transistor, an intermediate layer including an emissive layer, and an opposite electrode, and an opposite electrode contact portion having a joining region and an insulating region. The opposite electrode and a power interconnection line contact each other in the joining region. An insulating layer is interposed between the opposite electrode and the power interconnection line in the insulating region, and a portion of the insulating layer penetrates into the power interconnection line in the insulating region. | 2013-11-21 |
20130306940 | HETEROLEPTIC IRIDIUM COMPLEXES CONTAINING CARBAZOLE-IMIDAZOLE-CARBENE LIGANDS AND APPLICATION OF THE SAME IN LIGHT-EMITTING DEVICES - A compound according to Formula I, as well as, devices and formulations containing the compound as described. The compound has the general formula | 2013-11-21 |
20130306941 | Anthracene Derivative, and Light-Emitting Element, Light-Emitting Device, Electronic Device Using Anthracene Derivative - An object is to provide a novel anthracene derivative. Another object is to provide a light-emitting element with high luminous efficiency. Yet another object is to provide a light-emitting element with a long lifetime. Still another object is to provide a light-emitting device and an electronic device having a long lifetime by using the light-emitting elements of the present invention. The anthracene derivative represented by General Formula (1) is provided. The ability of the anthracene derivative represented by General Formula (1) to exhibit high luminous efficiency allows the production of a light-emitting element with high luminous efficiency and a long lifetime. | 2013-11-21 |
20130306942 | Light Emitting Device and Method of Manufacturing the Same - A light emitting device is provided which has a structure for lowering energy barriers at interfaces between layers of a laminate organic compound layer. A mixed layer ( | 2013-11-21 |
20130306943 | CONDUCTIVE ADHESIVE COMPOSITION, ELECTRONIC DEVICE, POSITIVE ELECTRODE LAMINATE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - The present invention provides a conductive adhesive composition having excellent adhesiveness and low surface resistance and capable of being used as a buffer layer of an electronic device. | 2013-11-21 |
20130306944 | Blends of Fullerene Derivatives, and Uses Thereof in Electronic Devices - Disclosed are compositions of mixed fullerene derivatives with utility in organic semiconductors, and methods of making and using such compositions. In certain embodiments, the present invention relates to compositions of mixed fullerene derivatives further comprising one or more additional fullerene-based components within specified ranges. In certain other embodiments, the invention relates to methods of producing mixed fullerene derivatives of a specific composition from mixed fullerene starting materials, or pure fullerene derivatives of a specific composition from mixed fullerene derivatives. In yet other embodiments, the invention relates to semiconductors and devices comprising a composition of the invention. | 2013-11-21 |
20130306945 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, DISPLAY DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - An object is to provide a light-emitting element which includes an exciplex being used as an energy donor capable of efficiently transferring energy to a substance exhibiting thermally activated delayed fluorescence. The exciplex comprises two kinds of substances and its singlet and triplet excited states are close to each other. Thus, by making light emission of the exciplex overlap with an absorption band on the longest wavelength side which corresponds to absorption by the substance exhibiting thermally activated delayed fluorescence, i.e., an energy acceptor, in a singlet excited state, it becomes possible to achieve efficient energy transfer from a singlet excited state of the exciplex to a singlet excited state of the substance exhibiting thermally activated delayed fluorescence, and it also becomes possible to achieve efficient energy transfer from a triplet excited state of the exciplex to a triplet excited state of the substance exhibiting thermally activated delayed fluorescence. | 2013-11-21 |
20130306946 | TOUCH DISPLAY PANEL - A touch display panel including a array substrate, an opposite substrate, an organic light emitting diode (OLED) structure, a plurality of conductive spacers and a sealant is provided. The OLED structure is disposed on the opposite substrate and located between the array substrate and the opposite substrate. The OLED structure includes a first electrode layer, an organic light emitting layer and a second electrode layer which are sequentially disposed. The first electrode layer is located on the opposite substrate and includes a plurality of touch sensing electrode. The second electrode layer is electrically connected to the array substrate via the conductive spacers. The sealant is sealed the OLED structure and the conductive spacers between the array substrate and the opposite substrate. | 2013-11-21 |
20130306947 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films. | 2013-11-21 |
20130306948 | PEELING METHOD AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE PEELING METHOD - The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate. | 2013-11-21 |
20130306949 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - An object is to provide a light-emitting element capable of emitting light with a high luminance even at a low voltage, and having a long lifetime. The light-emitting element includes n EL layers between an anode and a cathode (n is a natural number of two or more), and also includes, between m-th EL layer from the anode and (m+1)-th EL layer (m is a natural number, 1≦m≦n−1), a first layer including a first donor material in contact with the m-th EL layer, a second layer including an electron-transport material and a second donor material in contact with the first layer, and a third layer including a hole-transport material and an acceptor material in contact with the second layer and the (m+1)-th EL layer. | 2013-11-21 |
20130306950 | SEMICONDUCTING POLYMER AND ORGANIC ELECTROLUMINESCENCE DEVICE THEREOF - A semiconducting polymer and electronic devices comprising such polymer, in which the polymer has one or more repeat units, a first of the repeat units having the structure | 2013-11-21 |
20130306951 | ORGANIC ELECTROLUMINESCENT DEVICE AND CONDUCTIVE SUBSTRATE THEREOF - An organic electroluminescent device and a conductive substrate thereof are provided. Said conductive substrate includes a glass substrate, an indium tin oxide (ITO) layer and a metal oxide layer located between said glass substrate and said ITO layer. The refractive index of said metal oxide layer ranges between that of said glass substrate and said ITO layer. Due to the metal oxide layer, the refractive index of which ranges between that of the glass substrate and the ITO layer, is inserted into said conductive substrate, when the light extracts between the ITO/metal oxide layer and the metal oxide layer/glass, the critical angle of total reflection increases compared with that without the inserted metal oxide layer. Most part of light extracts out of the interface after refraction, and only small part of light is totally reflected, thus the light extraction enhances. | 2013-11-21 |
20130306952 | PLANAR LIGHT EMITTING DEVICE - A planar light emitting device includes an organic EL element module unit in which plural organic EL elements are arranged side by side, each of the organic EL elements including an anode, a light emitting layer and a cathode that are formed on a first surface side of a first transparent substrate, and a second transparent substrate disposed on a light extraction side of the organic EL element module unit. The organic EL element includes a first through hole wire that is electrically connected to a first part of the anode formed outside a light emitting portion, and a second through hole wire that is electrically connected to a second part of the cathode that extends on the first surface of the first transparent substrate. External connection electrodes for supplying power to the organic EL element module are disposed on a first surface side of the second transparent substrate so as to avoid a projection region of the light emitting portion. | 2013-11-21 |
20130306953 | METHOD FOR PRODUCING ELECTROLUMINESCENCE DEVICE - A method is provided for producing an organic EL device, capable of producing an organic EL device having a long light emission life, an organic EL device produced by the production method, and a planar light source, a lightening system and a display device each having the organic EL device. Included is a method for producing an organic electroluminescence device including a first electrode; a second electrode; and an organic layer including an organic compound provided between the first and second electrodes. The organic layer is formed by a method including an organic thin film forming step of forming, by coating, an organic thin film including an organic compound on a surface of a layer on which the organic layer is formed, under low-humidity; and an organic thin film storing step of storing the organic thin film obtained by the organic thin film forming step, under high-humidity. | 2013-11-21 |
20130306954 | PHOTOELECTRIC ELEMENT - Provided is a photoelectric element that includes an electron transport layer having excellent electron transport properties and a sufficiently large reaction interface and has low resistance loss and excellent conversion efficiency between light and electricity. The photoelectric element includes a first electrode | 2013-11-21 |
20130306955 | NITROGENATED HETEROCYCLIC DERIVATIVE, ELECTRON-TRANSPORTING MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENTS, AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - A specific nitrogen-containing heterocyclic compound having a urea structure, an electron transporting material containing the nitrogen-containing heterocyclic compound, and an organic electroluminescence device including a light emitting layer and an electron transporting layer between a cathode and an anode in which the electron transporting layer includes the electron transporting material or the nitrogen-containing heterocyclic derivative. An organic EL device exhibiting high emission efficiency even at low voltage and a material for organic EL devices are described. | 2013-11-21 |
20130306956 | FLEXIBLE ORGANIC ELECTROLUMINESCENT DEVICE AND MANUFACTURING METHOD THEREOF - A flexible organic electroluminescent device and a manufacturing method thereof are provided. The device comprises a substrate ( | 2013-11-21 |
20130306957 | ORGANIC ELECTROLUMINESCENT ELEMENT - An organic electroluminescence device including an anode, an emitting layer, a blocking layer, an electron-injecting layer and a cathode in this sequence, the emitting layer including a host and a styrylamine derivative having a specific structure; and the triplet energy E | 2013-11-21 |
20130306958 | OXYGEN-CONTAINING FUSED RING DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE DEVICE COMPRISING THE SAME - An oxygen-containing fused ring derivative represented by the following formula (1) wherein Ar | 2013-11-21 |
20130306959 | AROMATIC HETEROCYCLE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - An aromatic heterocyclic derivative represented by the following formula (1)-1 or (1)-2: | 2013-11-21 |
20130306960 | ORGANIC LIGHT EMITTING DEVICE AND MATERIALS FOR USE IN SAME - The present invention provides an OLED in which an organic thin film emissive layer comprising a single layer or plural layers between a cathode and an anode, wherein the organic thin film layer comprises at least one organic light emitting layer, wherein at least one light emitting layer comprises at least one host material and at least one phosphorescent emitter material, wherein the host material comprises a substituted or unsubstituted hydrocarbon compound having the chemical structure represented by the following formula (1): | 2013-11-21 |
20130306961 | ORGANIC LIGHT EMITTING DEVICE AND MATERIALS FOR USE IN SAME - The present invention provides an OLED in which an organic thin film emissive layer comprising a single layer or plural layers between a cathode and an anode, wherein the organic thin film layer comprises at least one organic light emitting layer, wherein at least one light emitting layer comprises at least one host material and at least one phosphorescent emitter material, wherein the host material comprises a substituted or unsubstituted hydrocarbon compound having the chemical structure represented by the following formula: | 2013-11-21 |
20130306962 | ORGANIC LIGHT EMITTING DEVICE AND MATERIALS FOR USE IN SAME - The OLEDs of the present invention are characterized by providing an organic thin film layer comprising a single layer or plural layers between a cathode and an anode, wherein the organic thin film layer comprises at least one organic light emitting layer, wherein at least one light emitting layer comprises at least one host material and at least one phosphorescent emitter material, wherein the host material comprises a substituted or unsubstituted hydrocarbon compound represented by the formula (1) or (2): | 2013-11-21 |
20130306963 | ORGANIC LIGHT EMITTING DEVICE AND MATERIALS FOR USE IN SAME - The OLEDs of the present invention are characterized by providing an organic thin film layer comprising a single layer or plural layers between a cathode and an anode, wherein the organic thin film layer comprises at least one organic light emitting layer, wherein at least one light emitting layer comprises at least one host material and at least one phosphorescent emitter material, wherein the host material comprises a bis-carbazole derivative host material;
| 2013-11-21 |
20130306964 | FLIP LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME - A method of fabricating a light emitting diode device comprises providing a substrate, growing an epitaxial structure on the substrate. The epitaxial structure includes a first layer on the substrate, an active layer on the first layer and a second layer on the active layer. The method further comprises depositing a conductive and reflective layer on the epitaxial structure, forming a group of first trenches and a second trench. Each of the first and second trenches extends from surface of the conductive and reflective layer to the first layer to expose part of the first layer. The method further comprises depositing conductive material to cover a portion of the conductive and reflective layer to form a first contact pad, and cover surfaces between adjacent first trenches to form a second contact pad. The second contact pad electrically connects the first layer by filling the conductive material in the first trenches. | 2013-11-21 |
20130306965 | THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME - A thin film transistor includes: a gate electrode on a substrate; a source electrode; a drain electrode positioned in a same layer as the source electrode and facing the source electrode; an oxide semiconductor layer positioned between the gate electrode and the source electrode or drain electrode; and a gate insulating layer positioned between the gate electrode and the source electrode or drain electrode. The oxide semiconductor layer includes titanium oxide (TiOx) doped with niobium (Nb). | 2013-11-21 |
20130306966 | TRANSISTOR HAVING SULFUR-DOPED ZINC OXYNITRIDE CHANNEL LAYER AND METHOD OF MANUFACTURING THE SAME - Transistors having sulfur-doped zinc oxynitride channel layers, and methods of manufacturing the same, include a ZnON channel layer with sulfur content ratio with respect to a zinc content of from about 0.1 at % to about 1.2 at %, a source electrode and a drain electrode respectively formed on a first region and a second region of the channel layer, a gate electrode corresponding to the channel layer, and a gate insulation layer between the channel layer and the gate electrode. | 2013-11-21 |
20130306967 | ADJUSTING CONFIGURATION OF A MULTIPLE GATE TRANSISTOR BY CONTROLLING INDIVIDUAL FINS - In a sophisticated semiconductor device, FINFET elements may be provided with individually accessible semiconductor fins which may be connected to a controllable interconnect structure for appropriately adjusting the transistor configuration, for instance with respect to current drive capability, replacing defective semiconductor fins and the like. Consequently, different transistor configurations may be obtained on the basis of a standard transistor cell architecture, which may result in increased production yield of highly complex manufacturing strategies in forming non-planar transistor devices. | 2013-11-21 |
20130306968 | TRANSISTOR STRUCTURE AND DRIVING CIRCUIT STRUCTURE - A transistor structure disposed on a substrate includes a gate electrode, a gate insulating layer overlapping the gate electrode, a channel layer overlapping the gate electrode, and a plurality of first electrodes and a plurality of second electrodes overlapping the gate electrode. The gate insulating layer is disposed between the channel layer and the gate electrode. Besides, the gate insulating layer is located among the first electrodes, the second electrodes, and the gate electrode. The first electrodes and the second electrodes are alternately arranged along a first direction. Each of the first electrodes has a first width along the first direction. Each of the second electrodes has a second width along the first direction. A ratio of the first width to the second width ranges from 2 to 20. A driving circuit structure having the transistor structure is also provided. | 2013-11-21 |
20130306969 | THIN FILM TRANSISTOR AND PIXEL CIRCUIT HAVING THE SAME - A thin film transistor which may be included in a pixel circuit includes: a substrate; a semiconductor layer formed on the substrate and including a source region, a first drain region spaced apart from the source region by a first current path, and a second drain region spaced apart from the source region by a second current path having a length different from that of the first current path; a gate electrode insulated from the semiconductor layer by a gate insulating layer; a source electrode connected to the source region of the semiconductor layer; a first drain electrode connected to the first drain region of the semiconductor layer; and a second drain electrode connected to the second drain region of the semiconductor layer. Currents having different magnitudes may be simultaneously provided through the first current path and the second current path. | 2013-11-21 |
20130306970 | POSITIVE PHOTOSENSITIVE RESIN COMPOSITION AND USES THEREOF - The invention relates to a positive photosensitive resin composition without color off after etching. The invention also provides a method for manufacturing a thin-film transistor array substrate, a thin-film transistor array substrate and a liquid crystal display device. | 2013-11-21 |
20130306971 | SEMICONDUCTOR ACTIVE MATRIX ON BURIED INSULATOR - A high resolution active matrix backplane is fabricated using techniques applicable to flexible substrates. A backplane layer including active semiconductor devices is formed on a semiconductor-on-insulator substrate. The backplane layer is spalled from the substrate. A frontplane layer including passive devices such as LCDs, OLEDs, photosensitive materials, or piezo-electric materials is formed over the backplane layer to form an active matrix structure. The active matrix structure may be fabricated to allow bottom emission and provide mechanical flexibility. | 2013-11-21 |
20130306972 | THIN FILM TRANSISTOR ARRAY PANEL HAVING IMPROVED APERTURE RATIO AND METHOD OF MANUFACTURING SAME - A thin film transistor array panel according to an exemplary embodiment of the present invention includes: a substrate; a gate line positioned on the substrate; a gate insulating layer positioned on the gate line; a semiconductor layer positioned on the gate insulating layer and having a channel portion; a data line including a source electrode and a drain electrode, the source and drain electrodes both positioned on the semiconductor layer; a passivation layer positioned on the data line and the drain electrode and having a contact hole formed therein; and a pixel electrode positioned on the passivation layer, wherein the pixel electrode contacts the drain electrode within the contact hole, and the channel portion of the semiconductor layer and the contact hole both overlap the gate line in a plan view of the substrate. | 2013-11-21 |
20130306973 | DISPLAY PANEL - A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT. | 2013-11-21 |
20130306974 | MANUFACTURING METHOD OF THIN FILM TRANSISTOR ARRAY PANEL - A manufacturing method of a thin film transistor array panel includes: simultaneously forming a gate conductor and a first electrode on a substrate, using a non-peroxide-based etchant; forming a gate insulating layer on the gate conductor and the first electrode; forming a semiconductor, a source electrode, and a drain electrode on the gate insulating layer; forming a passivation layer on the semiconductor, the source electrode, and the drain electrode; and forming a second electrode layer on the passivation layer. | 2013-11-21 |
20130306975 | Nonvolatile Charge Trap Memory Device Having A Deuterated Layer In A Multi-Layer Charge-Trapping Region - Scaling a charge trap memory device and the article made thereby. In one embodiment, the charge trap memory device includes a substrate having a source region, a drain region, and a channel region electrically connecting the source and drain. A tunnel dielectric layer is disposed above the substrate over the channel region, and a multi-layer charge-trapping region disposed on the tunnel dielectric layer. The multi-layer charge-trapping region includes a first deuterated layer disposed on the tunnel dielectric layer, a first nitride layer disposed on the first deuterated layer and a second nitride layer disposed | 2013-11-21 |
20130306976 | LIGHT EMITTING DIODE ELEMENT - An object of the present invention is to provide a GaN-based light emitting diode element having a great emission efficiency and suitable for an excitation light source for a white LED. The GaN-based light emitting diode element includes an n-type conductive m-plane GaN substrate, a light emitting diode structure which is formed of a GaN-based semiconductor, on a front face of the m-plane GaN substrate, and an n-side ohmic electrode formed on a rear face of the m-plane GaN substrate, wherein a forward voltage is 4.0 V or less when a forward current applied to the light emitting diode element is 20 mA. | 2013-11-21 |
20130306977 | COMPOUND SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - A compound semiconductor substrate includes a first substrate and a second substrate made of single crystal silicon carbide. In each of the first substrate and the second substrate, one surface is a (000-1) C-face and an opposite surface is a (0001) Si-face. The first substrate and the second substrate are bonded to each other in a state where the (0001) Si-face of the first substrate and the (0001) Si-face of the second substrate face each other, and the (000-1) C-face of the first substrate and the (000-1) C-face of the second substrate are exposed. | 2013-11-21 |
20130306978 | PASSIVATION OF GROUP III-NITRIDE HETEROJUNCTION DEVICES - Passivation of group III-nitride heterojunction devices is described herein. The passivation facilitates simultaneous realization of effective/high current collapse suppression and low leakage current without the use of a sophisticated multiple-field plate technique. The passivation can be achieved by growing a charge-polarized AlN thin film on the surface of a group III-nitride based heterojunction device by plasma-enhanced atomic layer deposition such that positive polarization charges are induced at the interface to compensate for a majority of negative charges at the interface. | 2013-11-21 |
20130306979 | SEMICONDUCTOR SUBSTRATE AND SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR SUBSTRATE - A GaN-based semiconductor is epitaxially grown on a silicon substrate with a surface orientation of (111). The difference between the lattice constant of the GaN and the silicon (111) surface is approximately 17%, which is quite large. Therefore, the dislocation density of the grown GaN exceeds 10 | 2013-11-21 |
20130306980 | NITRIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride semiconductor device includes a substrate, an electron transit layer and an electron supply layer that are sequentially formed above the substrate, where the electron supply layer has a different band gap energy than the electron transit layer, a drain electrode, a gate electrode, and a source electrode that is formed on the opposite side of the drain electrode with the gate electrode being sandwiched between the drain electrode and the source electrode. Here, a plurality of lower concentration regions are formed so as to be spaced away from each other on the surface of the electron transit layer between the gate electrode and the drain electrode. In the lower concentration regions, the concentration of a two-dimensional electron gas is lower than in other regions. | 2013-11-21 |
20130306981 | NITRIDE SEMICONDUCTOR DEVICE, NITRIDE SEMICONDUCTOR WAFER AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a nitride semiconductor device includes a foundation layer and a functional layer. The foundation layer is formed on an Al-containing nitride semiconductor layer formed on a silicon substrate. The foundation layer has a thickness not less than 1 micrometer and including GaN. The functional layer is provided on the foundation layer. The functional layer includes a first semiconductor layer. The first semiconductor layer has an impurity concentration higher than an impurity concentration in the foundation layer and includes GaN of a first conductivity type. | 2013-11-21 |
20130306982 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device according to an embodiment of the present invention includes: a semiconductor layer | 2013-11-21 |
20130306983 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME - A semiconductor device according to the present invention includes a semiconductor layer made of a wide bandgap semiconductor having a gate trench provided with a sidewall and a bottom wall, a gate insulating film formed on the sidewall and the bottom wall of the gate trench, and a gate electrode embedded in the gate trench to be opposed to the semiconductor layer through the gate insulating film, while the semiconductor layer includes a first conductivity type source region formed to be exposed on the side of a front surface of the semiconductor layer for partially forming the sidewall of the gate trench, a second conductivity type body region formed on a side of the source region closer to a rear surface of the semiconductor layer to be in contact with the source region for partially forming the sidewall of the gate trench, a first conductivity type drift region formed on a side of the body region closer to the rear surface of the semiconductor layer to be in contact with the body region for forming the bottom wall of the gate trench, and a second conductivity type first breakdown voltage holding region selectively formed on an edge portion of the gate trench where the sidewall and the bottom wall intersect with each other in a partial region of the gate trench. | 2013-11-21 |
20130306984 | NORMALLY-OFF-TYPE HETEROJUNCTION FIELD-EFFECT TRANSISTOR - A normally-off-type HFET includes an undoped Al | 2013-11-21 |
20130306985 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - An aluminum material can be used on a surface of the electrode of a semiconductor element, this aluminum layer need not be formed thick unnecessarily, a copper wire is bonded strongly to the semiconductor element irrespective of a diameter of the wire, and high heat resistance can be achieved. Silicon carbide (SiC) is used as a substrate of the semiconductor element | 2013-11-21 |
20130306986 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide substrate includes a first layer of a first conductivity type, a second layer of a second conductivity type provided on the first layer, and a third layer provided on the second layer and doped with an impurity for providing the first conductivity type. The silicon carbide substrate has a trench formed through the third layer and the second layer to reach the first layer. The first layer has a concentration peak of the impurity in a position away from the trench in the first layer. As a result, a silicon carbide semiconductor device having an electric field relaxation structure that can be readily formed is provided. | 2013-11-21 |
20130306987 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A first layer is of a first conductivity type. A second layer is provided on the first layer and is of a second conductivity type. A third layer is provided on the second layer and isolated from the first layer by the second layer, and is of the first conductivity type. A trench is formed through the third layer and the second layer to reach the first layer. The first layer includes a relaxation region sandwiching a gate insulating film between itself and a gate electrode. The relaxation region is doped with a first impurity for providing the first conductivity type. The relaxation region is also doped with a second impurity for providing the second conductivity type in a concentration lower than that of the first impurity. As a result, an electric field relaxation structure for improving the breakdown voltage can be readily formed. | 2013-11-21 |
20130306988 | DIAMOND AND DIAMOND COMPOSITE MATERIAL - A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate. | 2013-11-21 |
20130306989 | DIAMOND AND DIAMOND COMPOSITE MATERIAL - A structure having: a substrate and a diamond layer on the substrate having diamond nanoparticles. The diamond nanoparticles are formed by colliding diamond particles with the substrate. A method of: directing an aerosol of submicron diamond particles toward a substrate, and forming on the substrate a diamond layer of diamond nanoparticles formed by the diamond particles colliding with the substrate. | 2013-11-21 |
20130306990 | WAFER PRECURSOR PREPARED FOR GROUP III NITRIDE EPITAXIAL GROWTH ON A COMPOSITE SUBSTRATE HAVING DIAMOND AND SILICON CARBIDE LAYERS, AND SEMICONDUCTOR LASER FORMED THEREON - A high power, wide-bandgap device is disclosed that exhibits reduced junction temperature and higher power density during operation and improved reliability at a rated power density. The device includes a diamond substrate for providing a heat sink with a thermal conductivity greater than silicon carbide, a single crystal silicon carbide layer on the diamond substrate for providing a supporting crystal lattice match for wide-bandgap material structures that is better than the crystal lattice match of diamond, and a Group III nitride heterostructure on the single crystal silicon carbide layer for providing device characteristics. | 2013-11-21 |
20130306991 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor-element substrate in which a front-surface electrode pattern is formed on a surface of an insulating substrate and a back-surface electrode is formed on another surface; semiconductor elements affixed to the surface of the front-surface electrode pattern opposite the insulating substrate; and a sealing resin member which covers the semiconductor element and the semiconductor-element substrate, wherein at a position of the front-surface electrode pattern where the position has potential equivalent to that of the front-surface electrode pattern at a position where a semiconductor element is bonded, an insulating terminal table formed with a conductive relay terminal and an insulating member that insulates the relay terminal and the front-surface electrode pattern from each other are provided, and wiring from the semiconductor element to the outside is led out via the relay terminal. | 2013-11-21 |
20130306992 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A silicon carbide semiconductor device includes: a silicon carbide layer, a reaction layer which is in contact with the silicon carbide layer, a conductive oxidation layer which is in contact with the reaction layer, and an electrode layer which is formed over the reaction layer with the conductive oxidation layer interposed therebetween. A thickness of the conductive oxidation layer falls within a range of 0.3 nm to 2.25 nm. | 2013-11-21 |
20130306993 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of fabricating an optoelectronic device, comprising: providing a substrate, wherein the substrate comprises a first major surface and a second major surface opposite to the first major surface; forming a light emitting stack on the second major surface of the substrate; forming an supporting layer covering the light emitting stack; forming a plurality of first modified regions in the substrate by employing an first energy into the substrate; forming an oxide layer on the first major surface of the substrate; and cleaving the substrate along the plurality of the first modified regions. | 2013-11-21 |
20130306994 | DISPLAY PANEL - A display panel includes a fiber reinforced plastic substrate having a first lattice pattern with a first lattice period P, and a pixel layer disposed on the substrate having a second lattice pattern having a second lattice period H, in which if H>P, P and H satisfy | 2013-11-21 |
20130306995 | METHOD FOR MAKING GLASS SUBSTRATE FOR DISPLAY, GLASS SUBSTRATE AND DISPLAY PANEL - A method for manufacturing a glass substrate for a display includes a step of producing a glass substrate and a step of performing a surface treatment on one glass surface of major surfaces of the glass substrate to form surface unevenness. The surface treatment is performed such that protruded portions having a height of 1 nm or more from the surface roughness central plane of the surface unevenness are dispersedly provided on the glass surface after the surface treatment and the area ratio of the protruded portions with respect to the area of the glass surface is 0.5-10%. Using this glass substrate, semiconductor elements are formed on a major surface of the glass substrate opposite to the glass surface. Accordingly, a display panel is produced. | 2013-11-21 |
20130306996 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device includes a scanning line and a data line intersecting each other, a pixel circuit provided at a position corresponding to an intersection of the scanning line and the data line, and a power supply wiring line that supplies a given potential. The pixel circuit includes a light emitting element and a driving transistor configured to control a current flowing through the light emitting element. A gate electrode of the driving transistor is electrically connected via a first relay electrode to a given node. The first relay electrode is formed in the same layer as the power supply wiring line and the data line. The first relay electrode is surrounded on at least three sides by the power supply line. | 2013-11-21 |
20130306997 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND MANUFACTURING METHOD THEREOF, LIGHT EMITTING MODULE, AND ILLUMINATION APPARATUS - A semiconductor light emitting device includes a substrate and a plurality of light emitting cells disposed on the substrate. Each light emitting cell includes first and second conductive semiconductor layers having an active layer formed therebetween, and first and second electrodes formed on the first and second layers. A first insulation layer is formed on portions of the light emitting cell, while a second insulation layer entirely covers at least one light emitting cell. A method of manufacturing the semiconductor light emitting device, and a light emitting module and an illumination apparatus including the semiconductor light emitting device are also provided. | 2013-11-21 |
20130306998 | LED White Light Source with Remote Photoluminescent Reflecting Converter - The proposed illuminator relates to white-light lamps based on LEDs with remote photoluminescent converters. The illuminator comprises a heat removing base with a radiation output orifice, and the LEDs secured near the periphery of the orifice, with, arranged in series at a distance from the a concave photoluminescent converter layer and a concave light reflector, wherein the converter layer's and light reflector's concavities are oriented towards the LED's and the opening. White light mix of the LEDs' and converter layer's radiation exits via the orifice. The converter layer and reflector may have the form of a truncated ellipsoid of revolution, in particular a sphere, or a paraboloid, with a main axis perpendicular to the plane of the orifice, or a cylinder truncated by the plane of the orifice. The outside reflector' surface may have ribbed heat radiators associated with the heat removing base. | 2013-11-21 |
20130306999 | LED LIGHTING MODULE AND METHOD OF MAKING THE SAME - An LED lighting module includes a substrate and an LED chip mounted on the substrate. The substrate includes a base made of metal and an insulating layer. The base includes a principal surface and a raised portion above the principal surface. The insulating layer covers the principal surface of the base and exposes at least a part of the raised portion. The LED chip is supported on the raised portion. | 2013-11-21 |
20130307000 | RESIN-ATTACHED LEAD FRAME, METHOD FOR MANUFACTURING THE SAME, AND LEAD FRAME - A resin-attached lead frame includes a lead frame main body having a plurality of die pads (LED element resting portions) and a plurality of lead portions spaced from the die pads, the lead frame main body further including LED element resting regions each formed over an area including an upper surface of each of the die pads and an upper surface of each of the lead portions. A reflecting resin section surrounds each LED element resting region of the lead frame main body. A vapor-deposited aluminum layer or a sputtered aluminum layer is provided on respective upper surfaces of the LED element resting regions of the lead frame main body. | 2013-11-21 |
20130307001 | n-AlGaN THIN FILM AND ULTRAVIOLET LIGHT EMITTING DEVICE INCLUDING THE SAME - An n-type aluminum gallium nitride (AlGaN) thin film and an ultraviolet light emitting device including the same. The ultraviolet light emitting device includes: an aluminum nitride (AlN) buffer layer on a substrate; and an n-type AlGaN layer, an active layer, a p-type AlGaN layer that are sequentially stacked on the AlN buffer layer. A silicon doping density of the n-type AlGaN layer increases with respect to an increasing vertical position of the n-AlGaN layer with reference to the AlN buffer layer. | 2013-11-21 |
20130307002 | LIGHT EMITTING DEVICE WITH REFLECTIVE ELECTRODE - A light-emitting device comprises a semiconductor light emitting stack and an electrode on the semiconductor light emitting stack, wherein the electrode comprises a mirror layer, an adhesion layer inserted between the mirror layer and the semiconductor light emitting stack, a bonding layer, and a barrier layer inserted between the mirror layer and the bonding layer and covers the mirror layer to prevent the mirror layer reacting with the bonding layer, wherein the barrier layer comprises a first pair of different metals. | 2013-11-21 |
20130307003 | LIGHT-EMITTING DEVICE PACKAGE - A light-emitting device package may include a pre-mold and a molding member. The pre-mold may include an upper body having a inclined (e.g., concavely) plane from which a plurality of vertical holes passing through the upper body are formed and a lower body having an upper surface that meets the inclined (e.g., concavely) plane under the upper body to form a concave unit. The molding member may fill the plurality of vertical holes and the concave unit. | 2013-11-21 |
20130307004 | OPTOELECTRONIC COMPONENT AND METHOD FOR PRODUCING IT - An optoelectronic component includes a carrier having a first connection region and a second connection region, a radiation-emitting semiconductor chip having a base surface and a radiation exit surface opposite the base surface, wherein the semiconductor chip is arranged by the base surface on the carrier, a housing having a lower housing part arranged on the carrier and adjoining side flanks of the semiconductor chip, and an upper housing part arranged on the lower housing part and shaped as a reflector for radiation emitted by the semiconductor chip, and an electrical connection layer which leads from the radiation exit surface of the semiconductor chip via a part of the interface between the lower and the upper housing part and through the lower housing part to the first connection region on the carrier. | 2013-11-21 |
20130307005 | Low Cost Surface Mount Packaging Structure for Semiconductor Optical Device and Packaging Method Therefor - A surface mount packaging structure for semiconductor optical device and packaging method. A semiconductor optical device, disposed on a substrate, is electrically connected with a substrate through wires. A lower surface of the substrate is fixed on an upper surface of a flexible printed board that is provided with internal leads and external leads. The internal leads are electrically connected with the substrate through wires. A lower surface of the flexible printed board is fixed on a base board. A glass baffle is provided to form a window in front of a light-emitting or light-receiving surface of the semiconductor optical device. A focusing lens is adhered to the window of the glass baffle and is coupled with an optical path of the semiconductor optical device. The substrate and the semiconductor optical device thereon, the wires, and the internal leads on the flexible printed board are encased into packaging material. | 2013-11-21 |
20130307006 | ELECTRO-OPTICAL DEVICE AND ELECTRONIC APPARATUS - An electro-optical device includes a reflective layer, a light emitting element including a light emitting layer formed between an anode and a cathode, and a driving transistor configured to control a current flowing through the light emitting element. In the same layer as the reflective layer, a relay electrode included in a current path from the driving transistor to the anode is formed with a gap between the relay electrode and the reflective layer. A contact electrode electrically connecting the relay electrode and the anode is formed as a light shielding layer that blocks light entering the gap. | 2013-11-21 |
20130307007 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A light emitting device includes a first semiconductor layer, an active layer, and a second semiconductor layer, and first and second electrodes electrically connected to the first and second semiconductor layers, respectively. The second electrode includes a reflective pad portion, a transparent electrode layer, a reflective finger portion and an electrode pad portion. The reflective pad portion is disposed in a region of an upper surface of the second semiconductor layer. The transparent electrode layer is disposed on the second semiconductor layer and has an opening encompassing the reflective pad portion such that the transparent electrode layer is not in contact with the reflective pad portion. The reflective finger portion extends from the reflective pad portion and has at least a portion thereof disposed on the transparent electrode layer. The electrode pad portion covers the reflective pad portion to be in contact with the transparent electrode layer. | 2013-11-21 |
20130307008 | CONTINUOUS REFLECTION CURVED MIRROR STRUCTURE OF A VERTICAL LIGHT-EMITTING DIODE - A continuous reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding continuous curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding continuous curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency. | 2013-11-21 |
20130307009 | REFLECTION CURVED MIRROR STRUCTURE OF A VERTICAL LIGHT-EMITTING DIODE - A reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency. | 2013-11-21 |
20130307010 | Polymeric Matrix With Organic Phosphor and Manufactory Thereof - A method for manufacturing a wavelength converting element ( | 2013-11-21 |
20130307011 | WHITE LIGHT SOURCE AND WHITE LIGHT SOURCE SYSTEM INCLUDING THE SAME - The present invention provides a white light source satisfying a relational equation of | 2013-11-21 |
20130307012 | TENSION RELEASE LAYER STRUCTURE OF LIGHT-EMITTING DIODE - A tension release layer structure is applied to an LED which includes a P-type electrode, a permanent substrate, a binding layer, a tension release layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. The tension release layer is made of a complex material including at least two material elements with boundaries that are blended with each other. As the complex material in the tension release layer does not have apparent interface separation, stress between interface effect and materials can be eliminated to increase light-emitting efficiency and production yield of the LED. | 2013-11-21 |
20130307013 | LIGHT EMITTING DEVICE WITH DARK LAYER - A light-emitting device having a plurality of leads, a body, a light source die, a dark layer, and a substantially transparent encapsulant is disclosed. The dark layer absorbs a substantial portion of ambient light. The light source die may be a top emitting die. The light-emitting devices may be suitable for applications such as a large scale electronic display where each pixel is represented by each light-emitting device. The dark layer may contribute towards high contrast ratio by absorbing substantial amount of ambient light falling thereon. | 2013-11-21 |
20130307014 | SEMICONDUCTOR LIGHT EMITTING DEVICE - According to an embodiment, a semiconductor light emitting device includes a insulating base and a semiconductor light emitting element and resin. The insulating base includes a first face, a second face opposite to the first face, and a side face connecting to the first face and the second face, a recess portion being provided on the side face extending from the first face to the second face. The insulating base also includes a first metal layer blocking an opening of the recess portion, a second metal layer on an inner face of the recess portion, and a third metal layer on the second face, the third metal being electrically connected to the first metal layer via the second metal layer. A semiconductor light emitting element is fixed on the first face; and resin covers the first face and seals the semiconductor light emitting element. | 2013-11-21 |
20130307015 | Optoelectronic Semiconductor Device - An optoelectronic semiconductor device has a carrier foil that includes a first surface and a second surface opposite the first surface. At least one electrically conductive contact layer is arranged on the first surface and covers the first surface in places and contains at least one metal. At least one radiation-emitting optoelectronic semiconductor component is arranged on an outer face, remote from the carrier foil, of the electrically conductive contact layer. The radiation-emitting, optoelectronic semiconductor component is electrically conductively connected to the at least one electrically conductive contact layer. The carrier foil is formed with at least one polymer or contains at least one polymer. At least one monomer of the polymer is formed with at least one C-F bond, with C denoting carbon and F fluorine. | 2013-11-21 |
20130307016 | LED MODULE AND LIGHTING ASSEMBLY - Disclosed are a light emitting diode (LED) module and a lighting assembly. The lighting assembly comprises a light emitting device, a driver integrated circuit device for driving the light emitting device, a heat sink for dissipating heat generated from the light emitting device, and a heat shielding portion for blocking thermal interference between the driver integrated circuit device and the light emitting device. In the LED module, the driver integrated circuit device is disposed on the heat shielding portion. Accordingly, it is possible to block thermal interference between the light emitting device and the driver integrated circuit device and to decrease the size of the lighting assembly. | 2013-11-21 |
20130307017 | ELECTROSTATIC DISCHARGE PROTECTION CIRCUIT - The invention discloses an ESD protection circuit, comprising a P-type substrate; an N-well formed on the P-type substrate; a P-doped region formed on the N-well, wherein the P-doped region is electrically connected to an input/output terminal of a circuit under protection; a first N-doped region formed on the P-type substrate, the first N-doped region is electrically connected to a first node, and the P-doped region, the N-well, the P-type substrate, and the first N-doped region constitute a silicon controlled rectifier; and a second N-doped region formed on the N-well and electrically connected to a second node, wherein a part of the P-doped region and the second N-doped region constitute a discharging path, and when an ESD event occurs at the input/output terminal, the silicon controlled rectifier and the discharging path bypass electrostatic charges to the first and second nodes respectively. | 2013-11-21 |
20130307018 | Semiconductor Device Including First and Second Semiconductor Materials - A semiconductor device includes a first semiconductor region including a first semiconductor material. The semiconductor device further includes a second semiconductor region adjoining the first semiconductor region. The second semiconductor region includes a second semiconductor material different from the first semiconductor material. The semiconductor device further includes a drift or base zone in the first semiconductor region. The semiconductor device further includes an emitter region in the second semiconductor region. The second semiconductor region includes at least one type of deep-level dopant. A solubility of the at least one type of deep-level dopant is higher in the second semiconductor region than in the first semiconductor region. | 2013-11-21 |
20130307019 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. The semiconductor device is capable of obtaining a high reverse recovery resistant amount by allowing sheet resistance of a peripheral portion in a p type diffusion region that is in contact with a metal electrode through an insulating film on a surface to be as high as possible and reducing an increase in cost if possible. The semiconductor device includes: a p type diffusion region that is disposed in a surface layer of the one main surface of an n type semiconductor substrate; and a voltage-resistant region that surrounds the p type diffusion region. | 2013-11-21 |
20130307020 | THYRISTOR COMPONENT - The invention relates to a thyristor component, wherein a p-conductive trough ( | 2013-11-21 |
20130307021 | CMOS Device and Method of Forming the Same - A semiconductor device and method for fabricating a semiconductor device is disclosed. An exemplary semiconductor device includes a substrate including a first region and a second region. The semiconductor device further includes a first buffer layer formed over the substrate and between first and second isolation regions in the first region and a second buffer layer formed over the substrate and between first and second isolation regions in the second region. The semiconductor device further includes a first fin structure formed over the first buffer layer and between the first and second isolation regions in the first region and a second fin structure formed over the second buffer layer and between the first and second isolation regions in the second region. The first buffer layer includes a top surface different from a top surface of the second buffer layer. | 2013-11-21 |
20130307022 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device includes a buffer layer formed with a semiconductor adapted to produce piezoelectric polarization, and a channel layer stacked on the buffer layer, wherein a two-dimensional hole gas, generated in the channel layer by piezoelectric polarization of the buffer layer, is used as a carrier of the channel layer. On a complementary semiconductor device, the semiconductor device described above and an n-type field effect transistor are formed on the same compound semiconductor substrate. Also, a level shift circuit is manufactured by using the semiconductor device. Further, a semiconductor device manufacturing method includes forming a compound semiconductor base portion, forming a buffer layer on the base portion, forming a channel layer on the buffer layer, forming a gate on the channel layer, and forming a drain and source with the gate therebetween on the channel layer. | 2013-11-21 |
20130307023 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a semiconductor device that has a buffer layer with which a dislocation density is decreased. The semiconductor device includes a substrate, a buffer region formed over the substrate, an active layer formed on the buffer region, and at least two electrodes formed on the active layer. The buffer region includes at least one composite layer in which a first semiconductor layer having a first lattice constant, a second semiconductor layer having a second lattice constant that is different from the first lattice constant and formed in contact with the first semiconductor layer, and a third semiconductor layer having a third lattice constant that is between the first lattice constant and the second lattice constant are sequentially laminated. | 2013-11-21 |