47th week of 2014 patent applcation highlights part 15 |
Patent application number | Title | Published |
20140339489 | PHASE-CHANGE MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A phase-change memory device is provided. The memory device includes a lower electrode, a phase-change material layer formed on the lower electrode, an upper electrode formed on the phase-change material layer, and a stress insulation film formed to surround the phase-change material layer. | 2014-11-20 |
20140339490 | RESISTIVE SWITCHING MEMORY DEVICE HAVING IMPROVED NONLINEARITY AND METHOD OF FABRICATING THE SAME - A nonvolatile resistive switching memory (ReRAM) device having no selection device is provided. The ReRAM device includes a lower electrode that is formed on on a substrate; a metal oxide layer that is formed on the lower electrode, the metal oxide layer having a resistive switching characteristic; an upper electrode that is formed on the metal oxide layer; and a tunnel barrier oxide film that is formed between the lower electrode and the metal oxide layer, thereby forming a double oxide film structure, the tunnel barrier oxide film being made of a material, a band energy gap and a conduction band offset of which are lower than those of the metal oxide layer, and which does not cause interface switching. | 2014-11-20 |
20140339491 | FILAMENTARY MEMORY DEVICES AND METHODS - Apparatus, devices, systems, and methods are described that include filamentary memory cells. Mechanisms to substantially remove the filaments in the devices are described, so that the logical state of a memory cell that includes the that includes the removable filament can be detected. Additional apparatus, systems, and methods are described. | 2014-11-20 |
20140339492 | NON-VOLATILE MEMORY DEVICE - According to an embodiment, a non-volatile memory device includes a first interconnection extending in a first direction, a plurality of second interconnections provided side by side on the first interconnection and extending in a second direction intersecting the first direction and a memory layer provided on a side surface of each second interconnection. The device also includes a control element provided between each of the second interconnections and the first interconnection, an element part extending in the second direction, and a control electrode facing a side surface of the element part via a first insulating film. An adjustment part is provided on the first interconnection and adjacent to a control element connected to a second interconnection disposed at an end position of the second interconnections arranged in the first direction, and a first outer electrode provided between the adjustment part and the control element disposed at the end position. | 2014-11-20 |
20140339493 | ETCH BIAS HOMOGENIZATION - Methods and memory devices formed using etch bias homogenization are provided. One example method of forming a memory device using etch bias homogenization includes forming conductive material at respective levels over a substrate. Each respective level of conductive material is electrically coupled to corresponding circuitry on the substrate during patterning of the respective level of conductive material so that each respective level of conductive material has a homogenized etch bias during patterning thereof. Each respective level of conductive material electrically coupled to corresponding circuitry on the substrate is patterned. | 2014-11-20 |
20140339494 | Memory Cells and Memory Cell Arrays - Some embodiments include memory cells. The memory cells may have a first electrode, and a trench-shaped programmable material structure over the first electrode. The trench-shape defines an opening. The programmable material may be configured to reversibly retain a conductive bridge. The memory cell may have an ion source material directly against the programmable material, and may have a second electrode within the opening defined by the trench-shaped programmable material. Some embodiments include arrays of memory cells. The arrays may have first electrically conductive lines, and trench-shaped programmable material structures over the first lines. The trench-shaped structures may define openings within them. Ion source material may be directly against the programmable material, and second electrically conductive lines may be over the ion source material and within the openings defined by the trench-shaped structures. | 2014-11-20 |
20140339495 | MICRO LED WITH WAVELENGTH CONVERSION LAYER - A light emitting device and method of manufacture are described. In an embodiment, the light emitting device includes a micro LED device bonded to a bottom electrode, a top electrode in electrical contact with the micro LED device, and a wavelength conversion layer around the micro LED device. The wavelength conversion layer includes phosphor particles. Exemplary phosphor particles include quantum dots that exhibit luminescence due to their size, or particles that exhibit luminescence due to their composition. | 2014-11-20 |
20140339496 | Vertical Light Emitting Diode (VLED) Dice Having Confinement Layers With Roughened Surfaces And Methods Of Fabrication - A vertical light emitting diode (VLED) die includes an epitaxial structure having a first-type confinement layer, an active layer on the first-type confinement layer configured as a multiple quantum well (MQW) configured to emit light, and a second-type confinement layer having a roughened surface. In a first embodiment, the roughened surface includes a pattern of holes with a depth (d) in a major surface thereof surrounded by a pattern of protuberances with a height (h) on the major surface. In a second embodiment, the roughened surface includes a pattern of primary protuberances surrounded by a pattern of secondary protuberances. | 2014-11-20 |
20140339497 | STABILIZED NANOCRYSTALS - Fluorescent semiconductor nanocrystals and quantum dots having an inorganic coating on the outermost surface of the nanocrystal are described herein as well as methods for preparing and using such nanocrystals and quantum dots. Devices in which such nanocrystals and quantum dots are used are also described. | 2014-11-20 |
20140339498 | RADIATION-EMITTING SEMICONDUCTOR CHIP - A radiation-emitting semiconductor chip includes a semiconductor body with a semiconductor layer sequence, wherein the semiconductor body with the semiconductor layer sequence extends in a vertical direction between a first major face and a second major face; the semiconductor layer sequence includes an active region that generates radiation, a first region of a first conduction type and a second region of a second conduction type differing from the first conduction type; the first region extends in a vertical direction between the first major face and the active region; the second region extends in a vertical direction between the second major face and the active region; at least one layer of the active region is based on an arsenide compound semiconductor material; and relative to its respective extent in the vertical direction, the first region or the second region is based in a proportion of at least half on a phosphide compound semiconductor material. | 2014-11-20 |
20140339499 | SURFACE-PASSIVATED SILICON QUANTUM DOT PHOSPHORS - Phosphors formed using silicon nanoparticles are provided. The phosphors exhibit bright fluorescence and high quantum yield, making them ideal for lighting applications. Methods for making the silicon phosphors are also provided, along with lighting devices that incorporate the silicon phosphors. | 2014-11-20 |
20140339500 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes an n-type layer, a p-type layer, and a light emitting unit provided between the n-type layer and the p-type layer and including barrier layers and well layers. At least one of the barrier layers includes first and second portion layers. The first portion layer is disposed on a side of the n-type layer. The second portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the first portion layer. At least one of the well layers includes third and fourth portion layers. The third portion layer is disposed on a side of the n-type layer. The fourth portion layer is disposed on a side of the p-type layer, and contains n-type impurity with a concentration higher than that in the third portion layer. | 2014-11-20 |
20140339501 | Low-Resistivity p-Type GaSb Quantum Wells for Low-Power Electronic Devices - A semiconductor device including a heterostructure having at least one low-resistivity p-type GaSb quantum well is provided. The heterostructure includes a layer of In | 2014-11-20 |
20140339502 | ELEMENTAL SEMICONDUCTOR MATERIAL CONTACT FOR HIGH INDIUM CONTENT InGaN LIGHT EMITTING DIODES - A vertical stack including a p-doped GaN portion, a multi-quantum-well including indium gallium nitride layers, and an n-doped transparent conductive material portion is formed on an insulator substrate. A dielectric material liner is formed around the vertical stack, and is patterned to physically expose a surface of the p-doped GaN portion. A selective low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material on the physically exposed surfaces of the p-doped GaN portion, thereby forming an elemental semiconductor material portion. The selective low temperature epitaxy process can be performed at a temperature lower than 600° C., thereby limiting diffusion of materials within the multi-quantum well and avoiding segregation of indium within the multi-quantum well. The light-emitting diode can generate a radiation of a wide range including blue and green lights in the visible wavelength range. | 2014-11-20 |
20140339503 | ELEMENTAL SEMICONDUCTOR MATERIAL CONTACT FOR GAN-BASED LIGHT EMITTING DIODES - A vertical stack including a p-doped GaN portion, a multi-quantum-well, and an n-doped GaN portion is formed on an insulator substrate. The p-doped GaN portion may be formed above, or below, the multi-quantum-well. A dielectric material liner is formed around the vertical stack, and is patterned to physically expose a top surface of the p-doped GaN portion. A selective low temperature epitaxy process is employed to deposit a semiconductor material including at least one elemental semiconductor material on the physically exposed surfaces of the p-doped GaN portion, thereby forming an elemental semiconductor material portion. Metallization is performed on a portion of the elemental semiconductor material portions to form an electrical contact structure that provides effective electrical contact to the p-doped GaN portion through the elemental semiconductor material portion. The elemental semiconductor material portion spreads electrical current between the electrical contact structure and the p-doped GaN portion. | 2014-11-20 |
20140339504 | MAGNETIC MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A magnetic memory device and method of manufacturing the same are provided. The magnetic memory device can include a first vertical magnetic pattern on a substrate, a second vertical magnetic pattern on the first vertical magnetic pattern, and a tunnel barrier pattern disposed between the first vertical magnetic pattern and the second vertical magnetic pattern. The first vertical magnetic pattern can include a first pattern on the substrate, a second pattern on the first pattern, and an exchange coupling pattern between the first pattern and the second pattern. The first pattern can comprise an amorphous magnetic substance and a component comprising at least one of platinum, palladium, and nickel. | 2014-11-20 |
20140339505 | VIRTUAL SUBSTRATES BY HAVING THICK, HIGHLY RELAXED METAMORPHIC BUFFER LAYER STRUCTURES BY HYDRIDE VAPOR PHASE EPITAXY - Virtual substrates made by hydride vapor phase epitaxy are provided comprising a semiconductor growth substrate and a substantially strain-relaxed metamorphic buffer layer (MBL) structure comprising one or more layers of a semiconductor alloy on the growth substrate. The MBL structure is compositionally graded such that its lattice constant transitions from a lattice constant at the interface with the growth substrate that is substantially the same as the lattice constant of the growth substrate to a lattice constant at a surface opposite the interface that is different from the lattice constant of the growth substrate. The virtual substrates comprise relatively thick MBL structures (e.g., >20 μm) and relatively thick growth substrates (e.g., >0.5 mm) | 2014-11-20 |
20140339506 | FORMATION OF LARGE SCALE SINGLE CRYSTALLINE GRAPHENE - A method for transfer of a two-dimensional material includes forming a spreading layer of a two-dimensional material on a first substrate. The spreading layer has at least one monolayer. A stressor layer is formed on the spreading layer. The stressor layer is configured to apply stress to a closest monolayer of the spreading layer. The closest monolayer is exfoliated by mechanically splitting the spreading layer wherein at least the closest monolayer remains on the stressor layer. The at least one monolayer is stamped against a second substrate to adhere remnants of the two-dimensional material on the at least one monolayer to the second substrate to provide a single monolayer on the stressor layer. The single monolayer is transferred to a third substrate. | 2014-11-20 |
20140339507 | STACKED SEMICONDUCTOR NANOWIRES WITH TUNNEL SPACERS - A structure is provided that includes at least one multilayered stacked semiconductor material structure located on a semiconductor substrate and at least one sacrificial gate material structure straddles a portion of the at least one multilayered stacked semiconductor structure. The at least one multilayered stacked semiconductor material structure includes alternating layers of sacrificial semiconductor material and semiconductor nanowire template material. End segments of each layer of sacrificial semiconductor material are then removed and filled with a dielectric spacer. Source/drain regions are formed from exposed sidewalls of each layer of semiconductor nanowire template material, and thereafter the at least one sacrificial gate material structure and remaining portions of the sacrificial semiconductor material are removed suspending each semiconductor material. A gate structure is formed within the areas previously occupied by the at least one sacrificial gate material structure and remaining portions of the sacrificial semiconductor material. | 2014-11-20 |
20140339508 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - An organic light-emitting display device includes a plurality of organic light-emitting diodes which shares a cathode, a plurality of switching elements which is connected to the cathode, a plurality of capacitors, each comprising a first electrode which is connected to each of the switching elements, respectively, and a second electrode and a power bus line which is connected to the second electrode, wherein each of the plurality of switching elements controls a connection between the cathode and the first electrode. | 2014-11-20 |
20140339509 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - Provided is an organic light-emitting display apparatus that includes an organic light-emitting device that includes a plurality of sub-pixels that emit different light colors; an encapsulating film formed on the organic light-emitting device; a lens layer that is formed on the encapsulating film and includes convex surfaces that are disposed on regions corresponding to the sub-pixels and protrude in a light emission direction and a direction opposite to the light emission direction; and an anti-reflection film that is formed on the lens layer to prevent reflection of external light and includes color filters on regions corresponding to each of the sub-pixels. | 2014-11-20 |
20140339510 | DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A display apparatus and a method of manufacturing the same. The display apparatus includes a substrate, an encapsulation substrate disposed to face the substrate, a display unit formed between the substrate and the encapsulation substrate and displaying an image, and a sealing unit disposed between the substrate and the encapsulation substrate to bond the substrate and the encapsulation substrate to each other and containing a filler containing Cr, Cu, and Mn and a glass frit mixed with the filler. | 2014-11-20 |
20140339511 | INORGANIC OXIDE THIN FILM AND METHOD FOR PREPARING THE SAME - A quantum-dots containing multi-component inorganic oxide thin film is provided to include an amorphous inorganic oxide bulk region and a plurality of crystalline inorganic oxide regions, wherein the crystalline inorganic oxide regions are discontinuously formed to be surrounded by the amorphous inorganic oxide of the bulk region. | 2014-11-20 |
20140339512 | DEPOSITION APPARATUS, METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS, AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS - A deposition apparatus includes a first transporting unit configured to transport moving units, to which substrates may be detachably affixed, in a first direction; and a second transporting unit configured to transport empty moving units, from which the respective substrates have been detached, in a return direction opposite to the first direction, wherein the moving units are transported cyclically in reusing fashion. | 2014-11-20 |
20140339513 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - In an aspect, an organic light emitting display device including a first substrate, a first electrode, an organic light emitting display structure, a second electrode and a second substrate is provided. | 2014-11-20 |
20140339514 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a substrate. A buffer layer is formed on the substrate. A thin film transistor is disposed on the buffer layer. The thin film transistor includes an active layer, a gate electrode, a source electrode, a drain electrode, a first insulating layer, and a second insulating layer. An uneven pattern is formed by patterning the buffer layer. A first pixel electrode is disposed in an opening formed in the second insulating layer. The first pixel electrode includes a transparent conductive oxide. A second pixel electrode is disposed on the first pixel electrode. The second pixel electrode includes a semi-transmissive layer. An organic lighting-emitting layer is formed on the second pixel electrode. An opposite electrode is formed on the organic lighting-emitting layer. | 2014-11-20 |
20140339515 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus includes a substrate. A capacitor is formed on the substrate. The capacitor includes a first lower electrode, a second lower electrode, an upper electrode, a first insulating layer disposed between the first lower electrode and the second lower electrode, and a second insulting layer disposed between the second lower electrode and the upper electrode. A thin film transistor (TFT) includes a gate electrode disposed on a same layer as the first lower electrode, an active layer, and source and drain electrodes disposed on a same layer as the upper electrode. A wiring includes the same material layer as the second lower electrode. | 2014-11-20 |
20140339516 | Structure and Method for Packaging Organic Optoelectronic Device - A structure and a method for packaging an organic optoelectronic device are provided. In this method, a first substrate is provided, and a first barrier layer is disposed on the first substrate. An organic optoelectronic device is formed on the first barrier layer, and a first recess is also formed on the first barrier layer, in which the first recess forms a closed loop to surround the organic optoelectronic device. A sealant fills the first recess, and a second barrier layer is disposed on the organic optoelectronic device, in which the sealant attaches the second barrier layer to the first barrier layer to surround the organic optoelectronic device. | 2014-11-20 |
20140339517 | ORGANIC LIGHT-EMITTING DIODE DISPLAY, AN ELECTRONIC DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING SAID ORGANIC LIGHT-EMITTING DIODE DISPLAY - Provided is an organic light-emitting diode (OLED) display including: a first plastic layer; a first barrier layer formed on the first plastic layer; a first intermediate layer formed on the first barrier layer; a second plastic layer formed on the intermediate layer; an OLED layer formed on the second plastic layer; and a thin-film encapsulation layer encapsulating the OLED layer. | 2014-11-20 |
20140339518 | PHOSPHORESCENT ORGANIC LIGHT EMITTING DEVICES COMBINED WITH HOLE TRANSPORT MATERIAL HAVING HIGH OPERATING STABILITY - An improved OLED includes an emitter layer disposed between a cathode and an anode where the emitter layer includes a host material and a phosphorescent emitter material. A first hole transport layer is disposed between the emitter layer and the anode and a second hole transport layer is disposed between the first hole transport layer and the anode. The first hole transport layer includes a first hole transport material that is a carbazole type compound and the second hole transport layer includes a second hole transport material that is different from the first hole transport material. The phosphorescent emitter material includes a phosphorescent organometallic compound that is a heteroleptic compound represented by the formula L | 2014-11-20 |
20140339519 | ORGANIC ELECTROLUMINESCENT ELEMENT, COMPOUND FOR ORGANIC ELECTROLUMINESCENT ELEMENT, AND LIGHT-EMITTING DEVICE, DISPLAY DEVICE, AND ILLUMINATION DEVICE USING SAID ELEMENT - An organic electroluminescent element using a compound represented by the following general formula (I) emits dark blue light and has a high effect of inhibition of voltage during high-luminance driving: | 2014-11-20 |
20140339520 | DISPLAY PANEL AND DISPLAY APPARATUS HAVING THE SAME - The embodiments of the present invention provide a display panel and a display apparatus having the display panel. The display panel includes: an array substrate, a printed circuit board, a chip on film. One end of the chip on film is attached to a connection region of the array substrate, and the other end of the chip on film is attached to the printed circuit board, and the surface of the chip on film disposed with a chip faces the array substrate, and the connection region is disposed at a side of the array substrate away from a light-emitting surface. | 2014-11-20 |
20140339521 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE, AND DISPLAY UNIT - Provided is a light emitting device having a stacked structure. The stacked structure includes, in recited order: a first electrode layer; an organic layer including a light emitting layer; a second electrode layer; a conductive sealing layer; and a third electrode layer. | 2014-11-20 |
20140339522 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - To increase emission efficiency of a fluorescent light-emitting element by efficiently utilizing a triplet exciton generated in a light-emitting layer. The light-emitting layer of the light-emitting element includes at least a host material and a guest material. The triplet exciton generated from the host material in the light-emitting layer is changed to a singlet exciton by triplet-triplet annihilation (TTA). The guest material (fluorescent dopant) is made to emit light by energy transfer from the singlet exciton. Thus, the emission efficiency of the light-emitting element is improved. | 2014-11-20 |
20140339523 | ELECTRO-OPTIC DEVICE, METHOD OF MANUFACTURING ELECTRO-OPTIC DEVICE, AND ELECTRONIC APPARATUS - An electro-optic device includes: a first substrate that includes a first surface; an optical element that is disposed in a first region on the first surface; a casing that is disposed to overlap with a part of the optical element along an outer periphery of the first region on the first surface and includes first and second end portions; a first resin layer that is disposed on an inside of the second end portion of the casing on the first surface and is installed to overlap with at least a part of the optical element; a second resin layer that is disposed on the first resin layer; and a second substrate that faces the first surface and is disposed on the second resin layer. | 2014-11-20 |
20140339524 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, DISPLAY DEVICE, LIGHTING DEVICE, AND ELECTRONIC DEVICE - Provided is a light-emitting element which has an anode, a light-emitting layer over the anode, an electron-transport layer over and in contact with the light-emitting layer, an electron-injection layer over and in contact with the electron-transport layer, and a cathode over and in contact with the electron-injection layer. The light-emitting layer has an electron-transport property, and the electron-transport layer includes an anthracene derivative. The light-emitting layer further includes a phosphorescent substance. This device structure allows the formation of a highly efficient blue-emissive light-emitting element even though the phosphorescent substance has higher triplet energy than the anthracene derivative which directly contacts with the light-emitting layer. | 2014-11-20 |
20140339525 | OLED WITH COMPACT CONTACT DESIGN AND SELF-ALIGNED INSULATORS - OLEDs and techniques for fabricating OLEDs are provided, in which the OLED has a shortest lateral current path through an active region that is longer than the shortest lateral electric field line within the active region. Such configurations prevent “hot spots” in the OLED panel, leading to a more uniform emission by the panel. | 2014-11-20 |
20140339526 | ORGANOMETALLIC COMPLEX, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC APPLIANCE, AND LIGHTING DEVICE - A light-emitting element including a phosphorescent organometallic complex is provided. The organometallic complex emits phosphorescence in the yellow green to orange wavelength range and has high emission efficiency and high reliability. Thus, the organometallic complex that exhibits phosphorescence is provided. The organometallic complex, in which nitrogen at the 3-position of a pyrimidine ring is coordinated to a metal, a carbazole skeleton is bonded to the 4-position of the pyrimidine ring, and the carbazole skeleton is bonded to the metal, is used as an emission center. The metal is preferably a Group 9 element or a Group 10 element, more preferably iridium. | 2014-11-20 |
20140339527 | ORGANIC LIGHT-EMITTING DIODE DISPLAY, AN ELECTRONIC DEVICE INCLUDING THE SAME, AND METHOD OF MANUFACTURING THE ORGANIC LIGHT-EMITTING DIODE DISPLAY - Provided is an organic light-emitting diode (OLED) display including: first and second plastic layers; a first barrier layer and a first intermediate layer each positioned between the first and second plastic layers; and an OLED layer formed on the second plastic layer. The first barrier layer comprises silicon nitride. | 2014-11-20 |
20140339528 | LIGHT-EMITTING DEVICE AND DISPLAY DEVICE - Although an organic resin substrate is highly effective at reducing the weight and improving the shock resistance of a display device, it is required to improve the moisture resistance of the organic resin substrate for the sake of maintaining the reliability of an EL element. Hard carbon films are formed to cover a surface of the organic resin substrate and outer surfaces of a sealing member. Typically, DLC (Diamond like Carbon) films are used as the carbon films. The DLC films have a construction where carbon atoms are bonded into an SP | 2014-11-20 |
20140339529 | ORGANIC ELECTROLUMINESCENT ELEMENT - An organic electroluminescent element includes a hole injection layer (HI), a first hole transport layer (HT1), a second hole transport layer (HT2), and a light-emitting layer containing a host compound (H) and a phosphorescence emitting dopant compound (D), which are laminated in this order, between and an anode and a cathode. The phosphorescence emitting dopant compound has a partial structure represented by Formula (1): | 2014-11-20 |
20140339530 | LIGHT APPARATUS FOR GENERATING LIGHT - The invention relates to a light apparatus ( | 2014-11-20 |
20140339531 | PIXEL CIRCUIT AND DISPLAY DEVICE, AND A METHOD OF MANUFACTURING PIXEL CIRCUIT - The display device including a pixel circuit has a first line, a transistor, a light emitting element, and a second line. The transistor is located between the second line and an electrode of the light emitting element. Either the first line or the second line is wired in a region that overlaps a light emitting region of the light emitting element in a lamination direction of layers. The second line intersects the first line outside of the light emitting region and overlaps a non-light emitting region of the light emitting element. | 2014-11-20 |
20140339532 | POLYARYLAMINE KETONES - Polymers comprising a backbone comprising at least one arylamine repeat moiety and at least one linking moiety, wherein the linking moiety does not comprise an aryl moiety. Ink formulations and organic electronic devices such as OLEDs or OPVs can be formed from the polymers and doped polymers. The polymers can be used in a hole injection layer, hole transport layer, a hole extraction layer, or as a host material in an emissive layer. Improved stability can be achieved in organic electronic devices such as OLEDs and OPVs. | 2014-11-20 |
20140339533 | Organometallic Complex, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - An object is to provide a novel organometallic complex that has a broader emission spectrum in the wavelength range of green to blue. Other objects are to provide a light-emitting element using the organometallic complex, and a light-emitting device, an electronic device, and a lighting device each using the light-emitting element. Provided is an organometallic complex represented by a general formula (G1). Represented by the general formula (G1) is a novel organometallic complex that exhibits a broad emission spectrum in the wavelength range of green to blue. Further provided are a light-emitting element using the organometallic complex, and a light-emitting device, an electronic device, and a lighting device each using the light-emitting element. | 2014-11-20 |
20140339534 | DISPLAY DEVICE, METHOD FOR DRIVING THE SAME, AND ELECTRONIC APPARATUS - A display device including a pixel array unit having a matrix of pixels each configured such that an anode electrode of an organic electroluminescent element is connected to a source electrode of a drive transistor, a gate electrode of the drive transistor is connected to a source or drain electrode of a writing transistor, and a storage capacitor is connected between the gate and source electrodes of the drive transistor, scanning lines and power supply lines for individual pixel rows, and signal lines for individual pixel columns. A video signal reference potential is supplied to the signal lines for a period during which a scanning signal is supplied to the scanning lines during driving of pixels in a preceding row. During threshold correction for the drive transistor in a current pixel, the video signal reference potential and a potential of the cathode electrode of the organic electroluminescent element are equal. | 2014-11-20 |
20140339535 | DISPLAY UNIT AND LIGHT EMITTING DEVICE - A display unit is provided including a first insulating film, a plurality of anode electrodes disposed on the first insulating film, a second insulating film disposed on the anode electrodes, a plurality of organic layers disposed on the anode electrodes, and a cathode electrode disposed on the organic layer. The cathode electrode is connected to an extraction electrode via a first wiring provided in a peripheral area of the display unit. Also, the organic layers are provided over two or more lines of the anode electrodes. | 2014-11-20 |
20140339536 | TFT WITH INSERT IN PASSIVATION LAYER OR ETCH STOP LAYER - Embodiments disclosed herein generally relate to thin film transistors with one or more trenches to control the threshold voltage and off-current and methods of making the same. In one embodiment, a semiconductor device can include a substrate comprising a surface with a thin film transistor formed thereon, a first passivation layer formed over the thin film transistor, a trench formed within the first passivation layer and a second passivation layer formed over the first passivation layer and within the trench. | 2014-11-20 |
20140339537 | OXIDE THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - The present disclosure relates to an oxide thin film transistor and a fabricating method thereof. In the oxide thin film transistor, which uses amorphous zinc oxide (ZnO) semiconductor as an active layer, damage to the oxide semiconductor due to dry etching may be minimized by forming source and drain electrodes in a multilayered structure having at least two layers, and improving stability and reliability of a device by employing a dual passivation layer structure, which includes a lower layer for overcoming a deficiency and an upper layer for minimizing external affection, on the multilayered source and drain electrodes. | 2014-11-20 |
20140339538 | SEMICONDUCTOR DEVICE - To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor device, an oxide semiconductor layer is surrounded by an insulating layer including an aluminum oxide film containing excess oxygen. Excess oxygen in the aluminum oxide film is supplied to the oxide semiconductor layer including a channel by heat treatment in a manufacturing process of the semiconductor device. Furthermore, the aluminum oxide film forms a barrier against oxygen and hydrogen. It is thus possible to suppress the removal of oxygen from the oxide semiconductor layer surrounded by the insulating layer including an aluminum oxide film, and the entry of impurities such as hydrogen into the oxide semiconductor layer; as a result, the oxide semiconductor layer can be made highly intrinsic. In addition, gate electrode layers over and under the oxide semiconductor layer control the threshold voltage effectively. | 2014-11-20 |
20140339539 | SEMICONDUCTOR DEVICE - A semiconductor device including a transistor having excellent electrical characteristics is provided. Alternatively, a semiconductor device having a high aperture ratio and including a capacitor capable of increasing capacitance is provided. The semiconductor device includes a gate electrode, an oxide semiconductor film overlapping the gate electrode, an oxide insulating film in contact with the oxide semiconductor film, a first oxygen barrier film between the gate electrode and the oxide semiconductor film, and a second oxygen barrier film in contact with the first oxygen barrier film. The oxide semiconductor film and the oxide insulating film are provided on an inner side of the first oxygen barrier film and the second oxygen barrier film. | 2014-11-20 |
20140339540 | SIGNAL PROCESSING DEVICE - A plurality of writing transistors are connected in series, and a gate of a pass transistor, an input terminal of an inverter, or the like is directly or indirectly connected to each connection portion of the writing transistors. For example, a signal processing device includes first to third pass transistors, one semiconductor layer, and first to third wirings that overlap with the semiconductor layer and do not overlap with each other. Potentials of the first to third wirings can each change conductivities of at least portions of the semiconductor layer that overlap with the respective wirings. Gates of the first to third pass transistors are electrically connected to the semiconductor layer and are brought into a floating state depending on the conductivities of the portions of the semiconductor layer. Conduction between sources and drains of the pass transistors is controlled by potentials of the gates in the floating state. | 2014-11-20 |
20140339541 | SEMICONDUCTOR DEVICE - A semiconductor device with a novel structure in which storage capacity needed for holding data can be secured even with miniaturized elements is provided. In the semiconductor device, electrodes of a capacitor are an electrode provided in the same layer as a gate of a transistor and an electrode provided in the same layer as a source and a drain of the transistor. Further, a layer in which the gate of the transistor is provided and a wiring layer connecting the gates of the transistors in a plurality of memories are provided in different layers. With this structure, parasitic capacitance formed around the gate of the transistor can be reduced, and the capacitor can be formed in a larger area. | 2014-11-20 |
20140339542 | SEMICONDUCTOR DEVICE - A semiconductor device includes a dual-gate transistor in which an oxide semiconductor film is provided between a first gate electrode and a second gate electrode. In the channel width direction of the transistor, a side surface of each of the first and second gate electrodes is on the outer side of a side surface of the oxide semiconductor film. The first or second gate electrode faces the side surface of the oxide semiconductor film with the gate insulating film provided between the first or second gate electrode and the oxide semiconductor film. | 2014-11-20 |
20140339543 | SEMICONDUCTOR DEVICE - A semiconductor device includes a dual-gate transistor including an oxide semiconductor film between a first gate electrode and a second gate electrode, a gate insulating film between the oxide semiconductor film and the second gate electrode, and a pair of electrodes in contact with the oxide semiconductor film. The semiconductor device further includes an insulating film over the gate insulating film, and a conductive film over the insulating film and connected to one of the pair of electrodes. The insulating film includes an opening in at least a region overlapping with the oxide semiconductor film in which the second gate electrode is provided in contact with the gate insulating film. The second gate electrode is formed using the same material as the conductive film connected to the one of the pair of electrodes. | 2014-11-20 |
20140339544 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which deterioration of electric characteristics which becomes more noticeable as the semiconductor device is miniaturized can be suppressed. The semiconductor device includes a first oxide film, an oxide semiconductor film over the first oxide film, a source electrode and a drain electrode in contact with the oxide semiconductor film, a second oxide film over the oxide semiconductor film, the source electrode, and the drain electrode, a gate insulating film over the second oxide film, and a gate electrode in contact with the gate insulating film. A top end portion of the oxide semiconductor film is curved when seen in a channel width direction. | 2014-11-20 |
20140339545 | SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING THE SAME, AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - To manufacture a semiconductor device using an oxide semiconductor with high reliability and less variation in electrical characteristics, objects are to provide a method for manufacturing a semiconductor device with which an oxide semiconductor film with a fairly uniform thickness is formed, a manufacturing apparatus, and a method for manufacturing a semiconductor device with the manufacturing apparatus. In order to form an oxide semiconductor film with a fairly uniform thickness with use of a sputtering apparatus, an oxide semiconductor film the thickness uniformity of which is less than ±3%, preferably less than or equal to ±2% is formed by using a manufacturing apparatus in which a deposition chamber is set to have a reduced pressure atmosphere, preferably, to have a high degree of vacuum and power is adjusted to be applied uniformly to the entire surface of a substrate during film deposition. | 2014-11-20 |
20140339546 | SEMICONDUCTOR DEVICE - A structure is employed in which a first protective insulating layer; an oxide semiconductor layer over the first protective insulating layer; a source electrode and a drain electrode that are electrically connected to the oxide semiconductor layer; a gate insulating layer that is over the source electrode and the drain electrode and overlaps with the oxide semiconductor layer; a gate electrode that overlaps with the oxide semiconductor layer with the gate insulating layer provided therebetween; and a second protective insulating layer that covers the source electrode, the drain electrode, and the gate electrode are included. Furthermore, the first protective insulating layer and the second protective insulating layer each include an aluminum oxide film that includes an oxygen-excess region, and are in contact with each other in a region where the source electrode, the drain electrode, and the gate electrode are not provided. | 2014-11-20 |
20140339547 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A transistor with stable electric characteristics is provided. A transistor with small variation in electrical characteristics is provided. A miniaturized transistor is provided. A transistor having low off-state current is provided. A transistor having high on-state current is provided. A semiconductor device including the transistor is provided. One embodiment of the present invention is a semiconductor device including an island-shaped stack including a base insulating film and an oxide semiconductor film over the base insulating film; a protective insulating film facing a side surface of the stack and not facing a top surface of the stack; a first conductive film and a second conductive film which are provided over and in contact with the stack to be apart from each other; an insulating film over the stack, the first conductive film, and the second conductive film; and a third conductive film over the insulating film. | 2014-11-20 |
20140339548 | SEMICONDUCTOR DEVICE - To provide a semiconductor device that includes an oxide semiconductor and is miniaturized while keeping good electrical properties. In the semiconductor device, an oxide semiconductor layer filling a groove is surrounded by insulating layers including an aluminum oxide film containing excess oxygen. Excess oxygen contained in the aluminum oxide film is supplied to the oxide semiconductor layer, in which a channel is formed, by heat treatment in a manufacturing process of the semiconductor device. Moreover, the aluminum oxide film forms a barrier against oxygen and hydrogen, which inhibits the removal of oxygen from the oxide semiconductor layer surrounded by the insulating layers including an aluminum oxide film and the entry of impurities such as hydrogen in the oxide semiconductor layer. Thus, a highly purified intrinsic oxide semiconductor layer can be obtained. The threshold voltage is controlled effectively by gate electrode layers formed over and under the oxide semiconductor layer. | 2014-11-20 |
20140339549 | Semiconductor Device and Method for Manufacturing the Same - A first trench and a second trench are formed in an insulating layer, a transistor including an oxide semiconductor layer in the first trench is formed, and a capacitor is formed along the second trench. A first gate electrode is formed over the first trench, and a second gate electrode is formed under the first trench. | 2014-11-20 |
20140339550 | LAMINATED STRUCTURE, FERROELECTRIC GATE THIN FILM TRANSISTOR, AND FERROELECTRIC THIN FILM CAPACITOR - Provided is a ferroelectric gate thin film transistor which includes: a channel layer; a gate electrode layer which controls a conductive state of the channel layer; and a gate insulation layer which is arranged between the channel layer and the gate electrode layer and is formed of a ferroelectric layer. The gate insulation layer (ferroelectric layer) has the structure where a PZT layer and a BLT layer (Pb diffusion preventing layer) are laminated to each other. The channel layer (oxide conductor layer) is arranged on a surface of the gate insulation layer (ferroelectric layer) on a BLT layer (Pb diffusion preventing layer) side. The ferroelectric gate thin film transistor can overcome various drawbacks which may be caused due to the diffusion of Pb atoms into an oxide conductor layer from a PZT layer including a drawback that a transmission characteristic of a ferroelectric gate thin film transistor is liable to be deteriorated (for example, a width of a memory window is liable to become narrow). | 2014-11-20 |
20140339551 | SEMICONDUCTOR DEVICE - A nonvolatile memory is provided. A semiconductor device (a nonvolatile memory) has a circuit configuration similar to that of a general SRAM. By providing a transistor whose off-state current is small between a stored data holding portion and a power supply line of the SRAM, leakage of electric charge from the stored data holding portion is prevented. As the transistor whose off-state current is small provided for preventing leakage of electric charge from the stored data holding portion, a transistor including an oxide semiconductor film is preferably used. Such a configuration can also be applied to a shift register, whereby a shift register with low power consumption can be obtained. | 2014-11-20 |
20140339552 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a highly reliable semiconductor device including a transistor using an oxide semiconductor. After a source electrode layer and a drain electrode layer are formed, an island-like oxide semiconductor layer is formed in a gap between these electrode layers so that a side surface of the oxide semiconductor layer is covered with a wiring, whereby light is prevented from entering the oxide semiconductor layer through the side surface. Further, a gate electrode layer is formed over the oxide semiconductor layer with a gate insulating layer interposed therebetween and impurities are introduced with the gate electrode layer used as a mask. Then, a conductive layer is provided on a side surface of the gate electrode layer in the channel length direction, whereby an Lov region is formed while maintaining a scaled-down channel length and entry of light from above into the oxide semiconductor layer is prevented. | 2014-11-20 |
20140339553 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - To suppress variation of a signal in a semiconductor device. By suppressing the variation, formation of a stripe pattern in displaying an image on a semiconductor device can be suppressed, for example. A distance between two adjacent signal lines which go into a floating state in different periods (G1) is longer than a distance between two adjacent signal lines which go into a floating state in the same period (G0, G2). Consequently, variation in potential of a signal line due to capacitive coupling can be suppressed. For example, in the case where the signal line is a source signal line in an active matrix display device, formation of a stripe pattern in a displayed image can be suppressed. | 2014-11-20 |
20140339554 | THIN FILM TRANSISTOR - A thin-film transistor includes a gate electrode, a capacitance compensation structure, a semiconductor layer, a dielectric layer, a drain electrode and a source electrode. The capacitance compensation structure is disposed on the substrate and electrically connected to the gate electrode. The capacitance compensation structure has a first side facing the gate electrode and a second side facing away from the gate electrode. The semiconductor layer covers a portion of the gate electrode, and at least extends to overlap the first side of the capacitance compensation structure. The dielectric layer has a first opening and a second opening. Both of the first opening and the second opening expose a portion of the semiconductor layer overlapping the gate electrode respectively. The drain electrode is in contact with the semiconductor layer though the first opening. The source electrode is in contact with the semiconductor layer though the second opening. | 2014-11-20 |
20140339555 | SEMICONDUCTOR DEVICE - Provided is a transistor which includes an oxide semiconductor film and has stable electrical characteristics. In the transistor, over an oxide film which can release oxygen by being heated, a first oxide semiconductor film which can suppress oxygen release at least from the oxide film is formed. Over the first oxide semiconductor film, a second oxide semiconductor film is formed. With such a structure in which the oxide semiconductor films are stacked, the oxygen release from the oxide film can be suppressed at the time of the formation of the second oxide semiconductor film, and oxygen can be released from the oxide film in later-performed heat treatment. Thus, oxygen can pass through the first oxide semiconductor film to be favorably supplied to the second oxide semiconductor film. Oxygen supplied to the second oxide semiconductor film can suppress the generation of oxygen deficiency, resulting in stable electrical characteristics. | 2014-11-20 |
20140339556 | SEMICONDUCTOR DEVICE - A structure by which electric-field concentration which might occur between a source electrode and a drain electrode in a bottom-gate thin film transistor is relaxed and deterioration of the switching characteristics is suppressed, and a manufacturing method thereof. A bottom-gate thin film transistor in which an oxide semiconductor layer is provided over a source and drain electrodes is manufactured, and angle θ1 of the side surface of the source electrode which is in contact with the oxide semiconductor layer and angle θ2 of the side surface of the drain electrode which is in contact with the oxide semiconductor layer are each set to be greater than or equal to 20° and less than 90°, so that the distance from the top edge to the bottom edge in the side surface of each electrode is increased. | 2014-11-20 |
20140339557 | SEMICONDUCTOR DEVICE - A transistor in a display device is expected to have higher withstand voltage, and it is an object to improve the reliability of a transistor which is driven by high voltage or large current. A semiconductor device includes a transistor in which buffer layers are provided between a semiconductor layer forming a channel formation region and source and drain electrode layers. The buffer layers are provided between the semiconductor layer forming a channel formation region and the source and drain electrode layers in order to particularly relieve an electric field in the vicinity of a drain edge and improve the withstand voltage of the transistor. | 2014-11-20 |
20140339558 | ALTERNATING OPEN-ENDED VIA CHAINS FOR TESTING VIA FORMATION AND DIELECTRIC INTEGRITY - Kerf areas are located between the integrated circuit chips on a wafer. Via chain test structures are located in the kerf areas or test chips. The via chain test structures comprise a first conductor in a first area of the wafer. First via chains are connected at individual points to the first conductor. Each of the first via chains comprises an open-ended electrical circuit beginning at the first conductor and ending in an insulated region of a second area of the wafer. The via chain test structures comprise a second conductor in the second area. Second via chains are connected at individual points to the second conductor. Each of the second via chains comprises an open-ended electrical circuit beginning at the second conductor and ending in an insulated region of the first area. | 2014-11-20 |
20140339559 | SEMICONDUCTOR DEVICE HAVING TEST STRUCTURE - A semiconductor device is provided. First and second pads are electrically connected to a plurality of test structures. Each test structure includes an active region, active patterns, gate electrodes and an electrode pattern. The active region includes a rounded corner portion. The active patterns protrudes from the semiconductor substrate and extends in parallel in a first direction. The gate electrodes crosses over the active patterns in a second direction. One gate electrode is electrically connected to the first pad. The electrode pattern is disposed at a side of the gate electrode electrically connected to the first pad. The electrode pattern is electrically connected to the second pad. The electrode pattern crosses over the active patterns. An overlapping area of the electrode pattern and the active patterns in each test structure is different from an overlapping area of the electrode pattern and the active patterns in other test structures. | 2014-11-20 |
20140339560 | SEMICONDUCTOR DEVICE - A semiconductor device having a structure which can prevent a decrease in electrical characteristics due to miniaturization is provided. The semiconductor device includes, over an insulating surface, a stack in which a first oxide semiconductor layer and a second oxide semiconductor layer are sequentially formed, and a third oxide semiconductor layer covering part of a surface of the stack. The third oxide semiconductor layer includes a first layer in contact with the stack and a second layer over the first layer. The first layer includes a microcrystalline layer, and the second layer includes a crystalline layer in which c-axes are aligned in a direction perpendicular to a surface of the first layer. | 2014-11-20 |
20140339561 | DETECTING DEVICE, DETECTING SYSTEM, AND MANUFACTURING METHOD OF DETECTING DEVICE - A detecting device includes a conversion device having a substrate, a pixel electrode formed of a transparent conductive oxide, a impurity semiconductor portion, and a semiconductor portion, the pixel electrode, impurity semiconductor portion, and semiconductor portion having been formed upon the substrate in that order from the substrate side. The impurity semiconductor portion includes a first region including a place in contact with the pixel electrode, and a second region situated nearer to the semiconductor portion than the first region. Concentration of dopant in the second region is higher than concentration of dopant in the first region. | 2014-11-20 |
20140339562 | Thin-Film Transistor Sensor and Method of Manufacturing the TFT Sensor - According to an aspect of the present invention, there is provided a thin-film transistor (TFT) sensor, including a bottom gate electrode on a substrate, an insulation layer on the bottom gate electrode, an active layer in a donut shape on the insulation layer, the active layer including a channel through which a current generated by a charged body flows, an etch stop layer on the active layer, the etch stop layer including a first contact hole and a second contact hole, and a source electrode and a drain electrode burying the first and second contact holes, the source and drain electrodes being disposed on the etch stop layer so as to face each other. | 2014-11-20 |
20140339563 | PIXEL STRUCTURE, DISPLAY PANEL AND METHOD FOR FABRICATING PIXEL STRUCTURE - A pixel structure disposed on a substrate is provided. The pixel structure includes a gate electrode, a first gate insulation layer, a pixel electrode, a second gate insulation layer, a channel layer, a source electrode, a drain electrode and a common electrode. The gate electrode is disposed on the substrate and covered by the first gate insulation layer. The pixel electrode is disposed on the first gate insulation layer and covered by the second gate insulation layer. The pixel electrode is located between the first and the second gate insulation layers. The second gate insulation layer has a first contact opening exposing a portion of the pixel electrode. The channel layer is disposed on the second gate insulation layer. The drain electrode electrically connected to the pixel electrode. The source electrode is disposed on the second gate insulation layer. The common electrode is disposed on the second gate insulation layer. | 2014-11-20 |
20140339564 | PEELING METHOD AND METHOD FOR MANUFACTURING DISPLAY DEVICE USING THE PEELING METHOD - The present invention provides a simplifying method for a peeling process as well as peeling and transcribing to a large-size substrate uniformly. A feature of the present invention is to peel a first adhesive and to cure a second adhesive at the same time in a peeling process, thereby to simplify a manufacturing process. In addition, the present invention is to devise the timing of transcribing a peel-off layer in which up to an electrode of a semiconductor are formed to a predetermined substrate. In particular, a feature is that peeling is performed by using a pressure difference in the case that peeling is performed with a state in which plural semiconductor elements are formed on a large-size substrate. | 2014-11-20 |
20140339565 | LIGHT EMITTING DEVICE - A light emitting device includes a first conductive semiconductor layer on a substrate, a control layer interposed between the substrate and the first conductive semiconductor layer. The control layer includes a first nitride semiconductor layer having aluminum (Al), a plurality of nano-structures on the first nitride semiconductor layer, and a second nitride semiconductor layer provided on the first nitride semiconductor layer and having gallium (Ga). | 2014-11-20 |
20140339566 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed are a semiconductor device and a method of fabricating the same. The method includes forming a first GaN layer, a sacrificial layer and a second GaN layer on a GaN substrate, wherein the sacrificial layer has a bandgap narrower than those of the GaN layers; forming a groove penetrating the second GaN layer and the sacrificial layer; growing GaN-based semiconductor layers on the second GaN layer to form a semiconductor stack; forming a support substrate on the semiconductor stack; and removing the GaN substrate from the semiconductor stack by etching the sacrificial layer. Accordingly, since the sacrificial layer is etched using the groove, the support substrate can be separated from the semiconductor stack without damaging the support substrate. | 2014-11-20 |
20140339567 | LIGHT-EMITTING DEVICE - Provided is a high-efficiency light-emitting device. Further, provided is a light-emitting device with high efficiency and less variation in the color temperature of emitted white light in the case of configuring, for example, a white light-emitting device combining a blue LED and a phosphor layer. The light-emitting device includes a phosphor layer that emits light having a predetermined wavelength, and the phosphor layer contains at least one selected from the group consisting of a phosphor represented by a general formula: | 2014-11-20 |
20140339568 | SEMICONDUCTOR DEVICE WITH SUBSTRATE VIA HOLE AND METHOD TO FORM THE SAME - A process to form a substrate via hole is disclosed. The process includes steps of (1) forming a semiconductor layer on a substrate; (2) forming a gate and an auxiliary electrode simultaneously on a semiconductor layer; and (3) etching the substrate and the semiconductor layer from the back surface of the substrate to the auxiliary electrode to form a substrate via hole. A feature of the process is that the gate and the auxiliary electrode include a nickel or a metal primarily containing nickel in contact with the semiconductor layer. The nickel operates as an etching stopper for drilling the substrate and the semiconductor layer. | 2014-11-20 |
20140339569 | SEMICONDUCTOR DEVICE - A semiconductor device formed on a silicon carbide substrate that has a front surface on which an electrode is provided and a back surface on which an electrode is provided includes a drain layer, a drift layer, a base layer, a gate electrode that is located in a trench that extends from the front surface into the drift layer and is insulated by an insulating film, a some layer, a buried layer that is provided between the drift layer and the base layer and is formed such that the depth from the front surface to an end thereof on the side of the drift layer is greater than the depth from the front surface to a distal end of the trench, and a first epitaxial layer that is provided between the buried layer and the base layer and has a higher impurity concentration than the buried layer. | 2014-11-20 |
20140339570 | ACCESS-RESISTANT DIODE ARRAY DEVICE HAVING ENHANCED STABILITY - A device includes a substrate carrying an array of diodes, organized in rows and columns, and a peripheral substrate contact is arranged on at least one side of the array. The substrate includes one or more buried conducting lines electrically connected to the peripheral substrate contact and being positioned between at least two neighbouring columns of diodes and/or between at least two neighbouring rows of diodes. | 2014-11-20 |
20140339571 | SILICON CARBIDE EPITAXIAL WAFER AND MANUFACTURING METHOD THEREFOR - A SiC epitaxial wafer obtained by forming a SiC epitaxial layer on a 4H—SiC single-crystal substrate that is tilted at an off-angle of 0.4° to 5°, wherein linear density of step bunchings, which are connected to shallow pits which are due to screw dislocation in the SiC epitaxial wafer, is 5 mm | 2014-11-20 |
20140339572 | MEMORY WITH CARBON-CONTAINING SILICON CHANNEL - A memory includes a first memory cell and a second memory cell formed over the first memory cell. Each of the first memory cell and the second memory cell includes a channel region comprising silicon and carbon, a control gate, and a dielectric stack between the channel region and the control gate. A carbon content of the channel region of the second memory cell is less than a carbon content of the channel region of the first memory cell. | 2014-11-20 |
20140339573 | LED light source with thermally conductive luminescent matrix - A wavelength conversion chip is formed by depositing a wavelength conversion material on a substrate to form a layer, removing the resulting wavelength conversion layer from the substrate and then segmenting the wavelength conversion layer into a plurality of wavelength conversion chips. The wavelength conversion material can be annealed by thermal annealing or radiation annealing to increase the wavelength conversion efficiency of the chips or to sinter the wavelength conversion material to form a ceramic material. Optical coatings, vias, light extraction elements, electrical connections or electrical bond pads can be fabricated on the wavelength conversion chips. | 2014-11-20 |
20140339574 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel includes a first substrate on which an electrode line and a switching element are disposed, a second substrate positioned opposite the first substrate, a seal provided between the first substrate and the second substrate, a pad electrode that vertically overlaps the seal and is electrically connected to the electrode line, and a side electrode which is connected to one end of the pad electrode and includes a portion positioned on an exterior facing side of the seal. | 2014-11-20 |
20140339575 | CIRCUIT SUBSTRATE AND DISPLAY PANEL INCLUDING THE SAME - A circuit substrate includes a substrate, a first lead line, a second lead line, an insulating layer and a pad. The substrate has a pad region, a first non-pad region and a second non-pad region. The first lead line extends from the first non-pad region to the pad region. The second lead line extends from the second non-pad region to the pad region. The insulating layer is interposed between the first and second lead lines. The pads are on the pad region of the substrate and one of the pads is electrically connected to the first and second lead lines. A display panel including the circuit substrate is also provided. | 2014-11-20 |
20140339576 | FLIP-CHIP LIGHT-EMITTING DIODE UNIT - A flip-chip light-emitting diode (LED) unit includes a substrate, an electrode pad set disposed on the substrate, and three flip-chip LEDs disposed on the electrode pad set in a flip-chip manner and including one first LED and two second LEDs that are spaced apart from the first LED and that are electrically coupled to the first LED in a series configuration. | 2014-11-20 |
20140339577 | OPTOELECTRONIC SEMICONDUCTOR CHIP - An optoelectronic semiconductor chip includes a multiplicity of active regions, arranged at a distance from one another, and a reflective layer arranged at an underside of the multiplicity of active regions, wherein at least one of the active regions has a main extension direction, one of the active regions has a core region formed with a first semiconductor material, the active region has an active layer, covering the core region at least in directions transversely with respect to the main extension direction of the active region, the active region has a cover layer formed with a second semiconductor material and covers the active layer at least in directions transversely with respect to the main extension direction of the active region, and the reflective layer reflects electromagnetic radiation generated during operation in the active layer. | 2014-11-20 |
20140339578 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The present invention provides a manufacturing technique of a semiconductor device and a display device using a peeling process, in which a transfer process can be conducted with a good state in which a shape and property of an element before peeling are kept. Further, the present invention provides a manufacturing technique of more highly reliable semiconductor devices and display devices with high yield without complicating the apparatus and the process for manufacturing. According to the present invention, an organic compound layer including a photocatalyst substance is formed over a first substrate having a light-transmitting property, an element layer is formed over the organic compound layer including a photocatalyst substance, the organic compound layer including a photocatalyst substance is irradiated with light which has passed through the first substrate, and the element layer is peeled from the first substrate. | 2014-11-20 |
20140339579 | LED Structure - A light emitting diode (LED) structure comprises a first dopant region, a dielectric layer on top of the first dopant region, a bond pad layer on top of a first portion the dielectric layer, and an LED layer having a first LED region and a second LED region. The bond pad layer is electrically connected to the first dopant region. The first LED region is electrically connected to the bond pad layer. | 2014-11-20 |
20140339580 | Integrated Multi-Color Light Emitting Device Made With Hybrid Crystal Structure - An integrated hybrid crystal Light Emitting Diode (“LED”) display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides. | 2014-11-20 |
20140339581 | METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE PACKAGE - A semiconductor light emitting device package is provided having a light transmissive substrate, and a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially laminated on the light transmissive substrate. The light emitting structure comprises a first surface and a second opposing surface facing the light transmissive substrate. The semiconductor light emitting device package comprises a via penetrating the second conductivity-type semiconductor layer and the active layer, and exposing the first conductivity-type semiconductor layer. A first electrode has a first portion disposed on the first surface, and a second portion extending into the via and contacting the first conductivity-type semiconductor layer. An insulating layer is disposed between the first electrode, and each of the second conductivity type semiconductor layer, the active layer, and the first surface. A second electrode is disposed on the first surface. | 2014-11-20 |
20140339582 | RESIN SHEET LAMINATE, METHOD FOR MANUFACTURING THE SAME AND METHOD FOR MANUFACTURING LED CHIP WITH PHOSPHOR-CONTAINING RESIN SHEET - In order to improve the color and luminance uniformity of an LED chip with a phosphor-containing resin sheet obtained by adhering the phosphor-containing resin sheet to the LED chip, improve the ease of production, and improve the degree of freedom in design, etc., provided is a resin sheet laminate provided with a phosphor-containing resin sheet on a base material, wherein the phosphor-containing resin sheet is divided into a plurality of sections. | 2014-11-20 |
20140339583 | PHOSPHOR - According to one embodiment, the phosphor exhibits a luminescence peak in a wavelength ranging from 500 to 600 nm when excited with light having an emission peak in a wavelength ranging from 250 to 500 nm. The phosphor has a composition represented by (M | 2014-11-20 |
20140339584 | PHOSPHOR AND LIGHT EMITTING DEVICE PACKAGE INCLUDING THE SAME - Embodiments provide a phosphor including a silicate-based first phosphor emitting light having a yellow wavelength, a nitride-based second phosphor emitting light having a green wavelength, and a nitride-based third phosphor emitting light having a red wavelength. A full width at half maximum of the spectrum of mixed light emitted from the first phosphor to the third phosphor as the phosphors are excited by light having a blue wavelength is 110 nm or more. | 2014-11-20 |
20140339585 | ENCAPSULATING COMPOSITION AND LIGHT EMITTING DEVICE - An encapsulating composition for a light emitting device includes a transparent resin, a plurality of light scattering particles distributed throughout the transparent resin and having an average particle size ranging from 190 nm to 450 nm, and a plurality of phosphor particles distributed throughout the transparent resin. A light emitting device includes the encapsulating composition and a light emitting diode that is encapsulated by the encapsulating composition. | 2014-11-20 |
20140339586 | BRANCHED POLYCARBONATE COMPOSITIONS HAVING CONVERSION MATERIAL CHEMISTRY AND ARTICLES THEREOF - Disclosed herein is a light emitting device, comprising: a lighting element located in a housing, wherein the housing is formed from a plastic composition comprising: a conversion material, and a polycarbonate composition comprising: a flame retardant comprising a sulfonate salt and three polycarbonates. The first polycarbonate has a branching level of greater than or equal to 2%, a weight average molecular weight of 20,000 g/mole to 55,000 g/mole and a peak melt viscosity of greater than or equal to 25,000 poise. The second polycarbonate has a glass transition temperature greater than or equal to 170° C. The third polycarbonate has a branching level of 0 to less than 2% and a molecular weight of 17,000 to 40,000 g/mol. | 2014-11-20 |
20140339587 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting element having: a semiconductor laminated body; a full surface electrode containing an Ag provided on an upper surface of the p-type semiconductor layer; a cover electrode that covers a surface of the full surface electrode, is provided to contact on the upper surface of the p-type semiconductor layer at an outer edge of the full surface electrode, and is made of an Al-based metal material; a p-side electrode that is provided on a portion of a surface of the cover electrode; a metal oxide film that covers other surfaces of the cover electrode and contains an oxide of a metal material forming the cover electrode; and an insulation film that is made of an oxide and covers a surface of the metal oxide film, is provided. | 2014-11-20 |
20140339588 | LIGHT-EMITTING DEVICE AND LIGHTING SYSTEM - Disclosed is a light-emitting device including a support member, a reflective layer on the support member, a light-transmitting electrode layer on the reflective layer, a light-emitting structure on the light-transmitting electrode layer, the light-emitting structure being provided with a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, and a luminescence layer interposed between the reflective layer and the light-transmitting electrode layer. Accordingly, the luminescence layer is formed in the chip formation process to minimize non-uniform application of a phosphor composed of an epoxy resin and simplify fabrication of the light-emitting device. | 2014-11-20 |