47th week of 2008 patent applcation highlights part 46 |
Patent application number | Title | Published |
20080286945 | Controlled process and resulting device - A technique for forming a film of material ( | 2008-11-20 |
20080286946 | Wafer dicing method - A wafer stacked on a mounting layer is safely diced. The mounting layer has holes partially corresponding to chips on the wafer. Thus, chips obtained after dicing the wafer can be safely removed from the mounting tape. An amount of the mounting tape used can be reduced. And a production cost can be lowered as well. | 2008-11-20 |
20080286947 | Process for Separating Disk-Shaped Substrates with the Use of Adhesive Powers - The present invention relates to a device and a method for dividing up substrates ( | 2008-11-20 |
20080286948 | Fabrication Method of Semiconductor Integrated Circuit Device - A technique capable of stably releasing chips from a dicing tape, includes grinding a back surface of a semiconductor wafer, while adhering a pressure sensitive adhesive tape to a circuit forming surface of the semiconductor wafer formed with an integrated circuit, to achieve a predetermined thickness and forcibly oxidizing the back surface of the semiconductor wafer. Then, the pressure sensitive adhesive tape adhered to the circuit forming surface of the semiconductor wafer is released, and a dicing tape is adhered to the back surface of the semiconductor wafer. Further, the semiconductor wafer is divided by dicing it into individual chips, and then the back surface of the chip is pressed by way of the dicing tape, thereby releasing the chips from the dicing tape. | 2008-11-20 |
20080286949 | Method of Forming a Rare-Earth Dielectric Layer - Methods for forming compositions comprising a single-phase rare-earth dielectric disposed on a substrate are disclosed. In some embodiments, the method forms a semiconductor-on-insulator structure. Compositions and structures that are formed via the method provide the basis for forming high-performance devices and circuits. | 2008-11-20 |
20080286950 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device using a crystalline semiconductor film is manufactured. The crystalline semiconductor film is formed by providing an amorphous silicon film with a catalyst metal for promoting a crystallization thereof and then heated for performing a thermal crystallization, following which the crystallized film is further exposed to a laser light for improving the crystallinity. The concentration of the catalyst metal in the semiconductor film and the location of the region to be added with the catalyst metal are so selected in order that a desired crystallinity and a desired crystal structure such as a vertical crystal growth or lateral crystal growth can be obtained. Further, active elements and driver elements of a circuit substrate for an active matrix type liquid crystal device are formed by such semiconductor devices having a desired crystallinity and crystal structure respectively. | 2008-11-20 |
20080286951 | Semiconductor Wafer With An Epitaxially Deposited Layer, And Process For Producing The Semiconductor Wafer - A semiconductor wafer is formed of a substrate wafer of single crystal silicon doped with dopant atoms of the n type or p type, with a front surface and a back surface, contains a layer deposited epitaxially on the front surface of the substrate wafer. The substrate wafer additionally includes an n | 2008-11-20 |
20080286952 | Manufacturing method of SOI substrate and manufacturing method of semiconductor device - A manufacturing method of an SOI substrate which possesses a base substrate having low heat resistance and a very thin semiconductor layer having high planarity is demonstrated. The method includes: implanting hydrogen ions into a semiconductor substrate to form an ion implantation layer; bonding the semiconductor substrate and a base substrate such as a glass substrate, placing a bonding layer therebetween; heating the substrates bonded to each other to separate the semiconductor substrate from the base substrate, leaving a thin semiconductor layer over the base substrate; irradiating the surface of the thin semiconductor layer with laser light to improve the planarity and recover the crystallinity of the thin semiconductor layer; and thinning the thin semiconductor layer. This method allows the formation of an SOI substrate which has a single-crystalline semiconductor layer with a thickness of 100 nm or less over a base substrate. | 2008-11-20 |
20080286953 | Manufacturing method of semiconductor substrate, thin film transistor and semiconductor device - In manufacturing an SOI substrate, in a case where a step is present in a surface to be bonded, a substrate may warp and the contact area becomes small due to the step, an SOI layer having a desired shape cannot be obtained in some cases. However, the present invention provides an SOI substrate having a desired shape even when a step is produced on a surface to be bonded. Between steps on the surface to be bonded, dummy patterns | 2008-11-20 |
20080286954 | Method of Forming Pattern of Semiconductor Device - A method of forming a pattern of a semiconductor device comprises forming a first hard mask film, a first resist film, and a second hard mask film over an underlying layer of a semiconductor substrate; forming a second resist pattern over the second hard mask film; etching the second hard mask film using the second resist pattern as an etching mask to form a second hard mask pattern; performing an ion-implanting process on the first resist film with the second hard mask pattern as an ion implanting mask to form an ion implanting layer in a portion of the first resist film, and selectively etching the first resist film with the second hard mask pattern and an ion implanting layer as an etching mask to form a first resist pattern. | 2008-11-20 |
20080286955 | Fabrication of Recordable Electrical Memory - A memory cell of a memory device is fabricated by forming a first electrode on a substrate, positioning a photo mask at a first position relative to the substrate, and forming a first material layer on the first electrode based on a pattern on the photo mask. The photo mask is positioned at a second position relative to the substrate, and a second material layer is formed above the first material layer based on the pattern on the photo mask, the second material layer being offset from the first material layer so that a first sub-cell of the memory cell includes the first material layer and not the second material layer, and a second sub-cell of the memory cell includes both the first and second material layers. A second electrode is formed above the first and second material layers. | 2008-11-20 |
20080286956 | Method of manufacturing a semiconductor device - There is provided a method of removing trap levels and defects, which are caused by stress, from a single crystal silicon thin film formed by an SOI technique. First, a single crystal silicon film is formed by using a typical bonding SOI technique such as Smart-Cut or ELTRAN. Next, the single crystal silicon thin film is patterned to form an island-like silicon layer, and then, a thermal oxidation treatment is carried out in an oxidizing atmosphere containing a halogen element, so that an island-like silicon layer in which the trap levels and the defects are removed is obtained. | 2008-11-20 |
20080286957 | METHOD FORMING EPITAXIAL SILICON STRUCTURE - A method of forming an epitaxial silicon structure is disclosed. The method includes performing a first epitaxial growth process using a first source gas including silicon (Si) and hydrogen chloride (HCl) to form a first epitaxial silicon layer on a substrate, and performing a second epitaxial growth process using a second source gas including silicon (Si) and chlorine (Cl) to form a second epitaxial silicon layer on the first epitaxial silicon layer. | 2008-11-20 |
20080286958 | Semiconductor Substrate Having Enhanced Adhesion And Method For Manufacturing The Same - A semiconductor substrate for having enhanced adhesion to semiconductor device and its manufacturing method are provided. The wire circuit layout on the surface of the semiconductor substrate is of a specialized design and surface treatment for enhanced adhesion between the packaged adhered material and the substrate surface (the bonding pad in particular). In the manufacturing method of the semiconductor substrate, the processing by the passivation treatment or the roughening treatment of the whole or a part of the bonding pad on the substrate, such as the brown-oxide treatment or the black-oxide treatment, etc, and the use of an enlarged contact area act to enhance adhesion to the semiconductor device during the packaging of the semiconductor device. | 2008-11-20 |
20080286959 | Downhill Wire Bonding for QFN L - Lead - Downhill wire bonding process for QFN is performed with a capillary using goldwire that connects die (the Integrated Circuit or the substrate) and the stitch platform also called lead fingers. The goldwire is molten into a ball by applying high current. The molten ball is compressed against the bond pads of the integrated circuit using high temperature and ultrasonic energy. To complete the connection, the capillary is lifted vertically from the bond pads of the die or integrated circuit to loop over to the lead finger so that the goldwire is compressed against the lead finger with a reduced angle of approach of the capillary. Downhill wire bonding of the lead frames is advantageously addressed by increasing the thickness of the stitch platform so as to reduce the angle of approach of the capillary during the downhill wire bonding process between various components of the semiconductor. | 2008-11-20 |
20080286960 | Method of manufacturing semiconductor device suitable for forming wiring using damascene method - (a1) A concave portion is formed in an interlayer insulating film formed on a semiconductor substrate. (a2) A first film of Mn is formed by CVD, the first film covering the inner surface of the concave portion and the upper surface of the insulating film. (a3) Conductive material essentially consisting of Cu is deposited on the first film to embed the conductive material in the concave portion. (a4) The semiconductor substrate is annealed. During the period until a barrier layer is formed having also a function of improving tight adhesion, it is possible to ensure sufficient tight adhesion of wiring members and prevent peel-off of the wiring members. | 2008-11-20 |
20080286961 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method includes: forming a via pattern in an insulating film by use of an alignment mark of a lower wiring line; forming, by use of an alignment mark of the via pattern, an upper wiring groove pattern in an upper insulating film in which the via pattern is embedded; and repeating etching in a self-aligning manner to form a via and a wiring groove in an insulating film previously stacked under the insulating film in which the via pattern has been formed. | 2008-11-20 |
20080286962 | METHOD FOR FABRICATING METAL PAD - A method for fabricating a metal pad is disclosed. The fabrication method includes the step of selectively etching a wire insulation film formed on a semiconductor substrate to form a pattern, such as a dual damascene pattern, having plural vias in one trench. A metal film is deposited to fill the pattern and an insulation film is formed on the metal film. Further, the method includes removing the insulation film and the metal film to expose a surface of the wire insulation film to thereby form a metal pad and via contacts. | 2008-11-20 |
20080286963 | Method for Producing Through-Contacts in Semi-Conductor Wafers - The invention relates to a method for producing vertical through-contacts (micro-vias) in semi-conductor wafers in order to produce semi-conductor components, i.e. contacts on the front side of the wafer through the semi-conductor wafer to the rear side of the wafer. The invention also relates to a method which comprises the following steps: blind holes on the contact connection points are laser drilled from the rear side of the wafer into the semi-conductor substrate, the wafer is cleaned, the semi-conductor substrate is plasma etched in a material selected manner until the active layer stack of the wafer is reached, the active layer stack of the wafer is plasma etched in a material selective manner until the contacts, which are to be connected to the rear side of the wafer, are reached, a plating base is applied to the rear side of the wafer and into the blind holes and gold is applied by electrodeposition onto the metallizied rear side of the wafer and the blind holes. | 2008-11-20 |
20080286964 | SEMICONDUCTOR DEVICE AND A METHOD OF MANUFACTURING THE SAME - For simplifying the dual-damascene formation steps of a multilevel Cu interconnect, a formation step of an antireflective film below a photoresist film is omitted. Described specifically, an interlayer insulating film is dry etched with a photoresist film formed thereover as a mask, and interconnect trenches are formed by terminating etching at the surface of a stopper film formed in the interlayer insulating film. The stopper film is made of an SiCN film having a low optical reflectance, thereby causing it to serve as an antireflective film when the photoresist film is exposed. | 2008-11-20 |
20080286965 | Novel approach for reducing copper line resistivity - A method for fabricating an integrated circuit structure and the resulting integrated circuit structure are provided. The method includes forming a low-k dielectric layer; form an opening in the low-k dielectric layer; forming a barrier layer covering a bottom and sidewalls of the low-k dielectric layer; performing a treatment to the barrier layer in an environment comprising a treatment gas; and filling the opening with a conductive material, wherein the conductive material is on the barrier layer. | 2008-11-20 |
20080286966 | METHOD OF FORMING A DIELECTRIC CAP LAYER FOR A COPPER METALLIZATION BY USING A HYDROGEN BASED THERMAL-CHEMICAL TREATMENT - A new technique is disclosed in which a barrier/cap layer for a copper based metal line is formed by using a thermal-chemical treatment based on hydrogen with a surface modification on the basis of a silicon-containing precursor followed by an in situ plasma based deposition of silicon based dielectric barrier material. The thermal-chemical cleaning process is performed in the absence of any plasma ambient. | 2008-11-20 |
20080286967 | METHOD FOR FABRICATING A BODY TO SUBSTRATE CONTACT OR TOPSIDE SUBSTRATE CONTACT IN SILICON-ON-INSULATOR DEVICES - A method of forming an electrical contact between an active semiconductor device layer and a base substrate. The method includes forming a first masking layer over an uppermost surface of the active semiconductor layer, patterning a window in the masking layer, and etching an opening down to the base substrate within an area defined by the window. The opening is filled with a semiconductor contact material while simultaneously adding a dopant to the semiconductor contact material thereby forming an electrical contact between the active semiconductor device layer and the base substrate. | 2008-11-20 |
20080286968 | SOLDERABLE TOP METAL FOR SILICON CARBIDE SEMICONDUCTOR DEVICES - A silicon carbide device includes at least one power electrode on a surface thereof, a solderable contract formed on the power electrode, and at least one passivation layer that surrounds the solderable contact but is spaced from the solderable contract, thereby forming a gap. | 2008-11-20 |
20080286969 | Patterning methods - The invention includes a template comprising one or both of Cbs and CdSe adhered to a base in a desired pattern. The base can be any transparent or translucent material, and the desired pattern can include two or more separated segments. The template can be utilized for patterning a plurality of substrates. For instance, the substrates can be provided to have masking layers thereover, and the CdS and/or CdSe can be utilized as catalytic material to sequentially impart patterns in the masking layers. The imparting of the patterns can modify some regions of the masking layers relative to others, and either the modified or unmodified regions can be selectively removed to form patterned masks from the masking layers. Patterns from the patterned masks can then be transferred into the substrates. | 2008-11-20 |
20080286970 | Method for producing a semiconductor component and a semiconductor component produced according to the method - A method for producing a semiconductor component includes forming an n-doped layer in a p-doped layer of the semiconductor component, wherein the n-doped layer comprises at least one of: a sieve-like layer or a network-like layer. The method also includes porously etching the p-doped layer between the material of the n-doped layer to form a top electrode, and forming a cavity below the n-doped layer. | 2008-11-20 |
20080286971 | CMOS Gate Structures Fabricated by Selective Oxidation - A sidewall image transfer process for forming sub-lithographic structures employs a layer of sacrificial material that is deposited over a structure layer and covered by a cover layer. The sacrificial material layer and the cover layer are patterned with conventional resist and etched to form a sacrificial mandrel. The edges of the mandrel are oxidized or nitrided in a plasma at low temperature, after which the material layer and the cover layer are stripped, leaving sublithographic sidewalls. The sidewalls are used as hardmasks to etch sublithographic gate structures in the gate conductor layer. | 2008-11-20 |
20080286972 | ADDITION OF BALLAST HYDROCARBON GAS TO DOPED POLYSILICON ETCH MASKED BY RESIST - A chemical composition and method for providing uniform and consistent etching of gate stacks on a semiconductor wafer, whereby the composition includes an etchant and an added ballast gas added. The gate stacks are formed using this combined etchant and ballast gas composition. The ballast gas may either be similar to, or the equivalent of, a gaseous byproduct generated within the processing chamber. The ballast gas is added in either an overload amount, or in an amount sufficient to compensate for varying pattern factor changes across the water. This etchant and added ballast gas form a substantially homogeneous etchant across the entire wafer, thereby accommodating for or compensating for these pattern factor differences. When etching the wafer using this homogeneous etchant, a passivation layer is formed on exposed wafer surfaces. The passivation layer protects the lateral sidewalls of the gate stacks during etch to result in straighter gate stacks. | 2008-11-20 |
20080286973 | METHOD FOR FORMING SEMICONDUCTOR FINE-PITCH PATTERN - A method for forming a fine-pitch pattern on a semiconductor substrate is provided. The method includes patterning the semiconductor substrate to form a plurality of fine lines, forming a thermal oxide layer on the fine lines, polishing the thermal oxide layer to expose a top surface of the fine lines; etching the fine lines using the thermal oxide layer as a mask to expose first portions of the semiconductor substrate, etching a central bottom portion of the thermal oxide layer to expose second portions of the semiconductor substrate, and etching the semiconductor substrate using the etched thermal oxide layer as a mask. | 2008-11-20 |
20080286974 | Etching solution for multiple layer of copper and molybdenum and etching method using the same - An etching solution for a multiple layer of copper and molybdenum includes: about 5% to about 30% by weight of a hydrogen peroxide; about 0.5% to about 5% by weight of an organic acid; about 0.2% to about 5% by weight of a phosphate; about 0.2% to about 5% by weight of a first additive having nitrogen; about 0.2% to about 5% by weight of a second additive having nitrogen; about 0.01% to about 1.0% by weight of a fluoric compound; and de-ionized water making a total amount of the etching solution 100% by weight. | 2008-11-20 |
20080286975 | PLATINUM NANODET ETCH PROCESS - A method for selectively removing nano-crystals on an insulating layer. The method includes providing an insulating layer with nano-crystals thereon; exposing the nano-crystals to a high density plasma comprising a source of free radical chlorine, ionic chlorine, or both to modify the nano-crystals; and removing the modified nano-crystals with a wet etchant. | 2008-11-20 |
20080286976 | Method of removing a metal silicide layer on a gate electrode in a semiconductor manufacturing process and etching method - A method of removing a metal suicide layer on a gate electrode in a semiconductor manufacturing process is disclosed, in which the gate electrode, a metal silicide layer, a spacer, a silicon nitride cap layer, and a dielectric layer have been formed. The method includes performing a chemical mechanical polishing process to polish the dielectric layer using the silicon nitride cap layer as a polishing stop layer to expose the silicon nitride cap layer over the gate electrode; removing the exposed silicon nitride cap layer to expose the metal silicide layer; and performing a first etching process to remove the metal silicide layer on the gate electrode. | 2008-11-20 |
20080286977 | Process to open carbon based hardmask overlying a dielectric layer - A method of opening a carbon-based hardmask layer composed of amorphous carbon containing preferably at least 60% carbon and between 10 and 40% hydrogen. The hardmask is opened by plasma etching using an etching gas composed of H | 2008-11-20 |
20080286978 | ETCHING AND PASSIVATING FOR HIGH ASPECT RATIO FEATURES - An etch method includes etching a masked substrate to form a recess with a first sidewall in the substrate. A thin surface layer of the substrate on the first sidewall is then converted into a passivation layer. The masked substrate is etched again to deepen the recess in the substrate. A surface layer of the substrate on the second sidewall of the recess is then converted into a passivation layer. In one embodiment, upon removal of the passivation layers from both sidewalls, the first and second sidewalls of the high aspect ratio recess are aligned to within 10 Å of each other to provide a high aspect ratio recess having a vertical profile. | 2008-11-20 |
20080286979 | Method of controlling sidewall profile by using intermittent, periodic introduction of cleaning species into the main plasma etching species - A method of removing a silicon-containing hard polymeric material from an opening leading to a recessed feature during the plasma etching of said recessed feature into a carbon-containing layer in a semiconductor substrate. The method comprises the intermittent use of a cleaning step within a continuous etching process, where at least one fluorine-containing cleaning agent species is added to already present etchant species of said continuous etching process for a limited time period, wherein the length of time of each cleaning step ranges from about 5% to about 100% of the time length of an etch step which either precedes or follows said cleaning step. | 2008-11-20 |
20080286980 | Substrate Processing Apparatus and Semiconductor Device Producing Method - Disclosed is a substrate processing apparatus, including: a processing container; a gas supply section to supply a desired processing gas to the processing container; a gas exhaust section to exhaust a surplus of the processing gas from the processing container; a substrate placing member to place a plurality of substrates thereon in a stacked state in the processing container; and an electrode, to which high frequency electric power is applied, to generate plasma for exciting the processing gas, the electrode including two thin and long linear sections disposed in parallel and a short-circuit section to electrically short-circuit one ends of the linear sections, and the linear sections extending beside the substrates in a direction substantially perpendicular to main faces of the substrates. | 2008-11-20 |
20080286981 | IN SITU SILICON AND TITANIUM NITRIDE DEPOSITION - A method of processing semiconductor wafers is provided, comprising loading a batch of semiconductor wafers into a processing chamber; depositing titanium nitride (TiN) onto the wafers in the processing chamber; and depositing silicon onto the wafers in the processing chamber, without removing the wafers from the processing chamber between said depositing steps. In preferred embodiments, the TiN and silicon depositing steps are both conducted at temperatures within about 400-550° C., and at temperatures within 100° C. of one another. | 2008-11-20 |
20080286982 | PLASMA IMMERSION ION IMPLANTATION WITH HIGHLY UNIFORM CHAMBER SEASONING PROCESS FOR A TOROIDAL SOURCE REACTOR - A method is provided for performing plasma immersion ion implantation with a highly uniform seasoning film on the interior of a reactor chamber having a ceiling and a cylindrical side wall and a wafer support pedestal facing the ceiling. The method includes providing a gas distribution ring with plural gas injection orifices on a periphery of a wafer support pedestal, the orifices facing radially outwardly from the wafer support pedestal. Silicon-containing gas is introduced through the gas distribution orifices of the ring to establish a radially outward flow pattern of the silicon-containing gas. The reactor includes pairs of conduit ports in the ceiling adjacent the side wall at opposing sides thereof and respective external conduits generally spanning the diameter of the chamber and coupled to respective pairs of the ports. The method further includes injecting oxygen gas through the conduit ports into the chamber to establish an axially downward flow pattern of oxygen gas in the chamber. RF power is coupled into the interior of each of the conduits to generate a toroidal plasma current of Si | 2008-11-20 |
20080286983 | DEPOSITION OF TA- OR NB-DOPED HIGH-K FILMS - Methods and compositions for depositing high-k films are disclosed herein. In general, the disclosed methods utilize precursor compounds comprising Ta or Nb. More specifically, the disclosed precursor compounds utilize certain ligands coupled to Ta and/or Nb such as 1-methoxy-2-methyl-2-propanolate (mmp) to increase volatility. Furthermore, methods of depositing Ta or Nb compounds are disclosed in conjunction with use of Hf and/or Zr precursors to deposit Ta-doped or Nb-doped Hf and/or Zr films. The methods and compositions may be used in CVD, ALD, or pulsed CVD deposition processes. | 2008-11-20 |
20080286984 | SILICON-RICH LOW-HYDROGEN CONTENT SILICON NITRIDE FILM - In one embodiment, a method for forming a silicon nitride film is provided. The method includes providing a plasma-enhanced chemical vapor deposition (PECVD) reactor with a semiconductor substrate therein; flowing a gas mixture consisting of silane and nitrogen into the PECVD reactor; and forming a plasma in the PECVD reactor, whereby the silicon nitride film is deposited on the semiconductor substrate. | 2008-11-20 |
20080286985 | Electronic Device with Multiple-Direction Rotation Connector - An electronic device with a multiple-direction rotation connector includes a main body and a pivoting structure. The main body has a bearing structure while the pivoting structure pivots on the bearing structure to rotate along the first and second axes. The pivoting structure has two convex ends, while the bearing structure has two opposite concaves adapted to receive the convex ends respectively. One of the concaves is formed with a protruding column that is adapted to slide within a groove formed on the pivoting structure. Thereby, the connector can be accommodated in the main body and rotates in multiple directions for the preferred operation. | 2008-11-20 |
20080286986 | ELECTRICAL HOSE SWIVEL CONNECTOR - An electrical hose swivel connector may be used to connect a vacuum hose to a hair clipping device. The hair clipping device may need power, which may be delivered from a power source and through a power cord. The power cord may be in electrical communication with this electrical hose swivel connector to deliver power to the hair clipping device. This electrical hose swivel connector can allow for easier use of the hair clipping device, which may be used with the vacuum hose without causing tangling, twisting, or knotting in the power cord. | 2008-11-20 |
20080286987 | Telecommunication connectivity system - A telecommunications connectivity system including a patch panel comprising a plurality of ports, each port including first and second electrical terminals, the first electrical terminal enabling at least one data communications standard not enabled by the second electrical terminal. The telecommunications connectivity system also includes a terminal selection system including a terminal selector that houses an electrical connector. The terminal selector may be installed in one of the ports such that the electrical connector connects to either the first or second electrical terminal, as preselected. The telecommunications connectivity system also includes a wall receptacle system electrically connected to each of the ports, the wall receptacle system including first and second jacks, the first jack enabling at least one data communications standard not enabled by the second jack. | 2008-11-20 |
20080286988 | ELECTRONIC CONTROL UNIT AND METHOD OF MANUFACTURING THE SAME - An electronic control unit includes a circuit board, a case, and a group of a plurality of bus bars fixed to the case by insert molding. The bus bars each include a terminal portion having a constant-width portion, and a base portion which is wider than the constant-width portion. The base portions of the respective bus bars are arranged parallel to each other in the width direction thereof. Each bus bar is bent at a bent portion of its base portion. The terminal portion of each bus bar extends through the circuit board and is soldered to and electrically connected to a terminal connecting portion of an electrical circuit on the circuit board at a soldered portion. The bent portions of alternate bus bars are offset from the bent portions of the other bus bars in the longitudinal direction of the bus bars, whereby the soldered portions of the respective terminal portions are arranged in a staggered manner. | 2008-11-20 |
20080286989 | Connector for an Electrical Circuit Embedded in a Composite Structure - According to one embodiment, a connector for a composite structure includes at least one conducting element that is coupled to a node of an electrical circuit embedded in a composite structure. The composite structure has two opposing surfaces in which the conducting element is disposed essentially between the surfaces of the composite structure. | 2008-11-20 |
20080286990 | Direct Package Mold Process For Single Chip SD Flash Cards - A Secure Digital device including a PCBA having passive components mounted on a PCB using surface mount technology (SMT) techniques, and active components (e.g., controller and flash memory) mounted using chip-on-board (COB) techniques. The components are mounted only on one side of the PCB, and then a molded plastic casing is formed over both sides of the PCB such that the components are encased in the plastic, and a thin plastic layer is formed over the PCB surface opposite to the components. The molded plastic casing is formed to include openings that expose metal contacts provided on the PCB, and ribs that separate the openings. In one embodiment the metal contacts are formed on the same side as the thin plastic layer, and in an alternate embodiment the metal contacts are formed on a block that is mounted on the PCB during the SMT process. | 2008-11-20 |
20080286991 | BATTERY CONTACT - A compressible electrical contact is disclosed. The compressible electrical contact may include a nose portion, a corrugated portion and a tail portion. The tail portion may extend from a first end of the corrugated portion and the nose portion may extend from an opposite end of the corrugated portion. The corrugated portion may define a first surface and a second surface opposite the first surface. The first and second surfaces may have a width. The corrugated portion may also have a third surface extending between the first and second surfaces and a fourth surface opposite the third surface. A plurality of corrugations may be formed in the third and fourth surfaces of the corrugated portion wherein a first corrugation may extend at least partially between an upper portion and a lower portion of the nose portion. | 2008-11-20 |
20080286992 | BATTERY CONTACT - A compressible electrical contact is disclosed. The compressible electrical contact may include a nose portion, a corrugated portion and a tail portion. The tail portion may extend from a first end of the corrugated portion and the nose portion may extend from an opposite end of the corrugated portion. The corrugated portion may define a first surface and a second surface opposite the first surface. The first and second surfaces may have a width. The corrugated portion may also have a third surface extending between the first and second surfaces and a fourth surface opposite the third surface. A plurality of corrugations may be formed in the third and fourth surfaces of the corrugated portion. | 2008-11-20 |
20080286993 | ELECTRIC BOARD AND IMAGE FORMING APPARATUS - An electric board is configured to be removably installed in a main body of an apparatus. The electric board includes a board member on which electric components can be mounted. A shielding member is attached to the board member. A handle member is fitted on the shielding member whereby a user can hold the handle member when pulling-out the electric board from the main body. | 2008-11-20 |
20080286994 | PRINTED CIRCUIT BOARD, METHOD OF MANUFACTURING A PRINTED CIRCUIT BOARD AND ELECTRONIC APPARATUS - According to one embodiment, a printed circuit board includes a wiring board, a through-hole mount device, and a surface mount device. The wiring board has a first surface, a second surface opposite to the first surface, and through holes. The through-hole mount device has leads. The leads are soldered inside the through holes so that the through-hole mount device is mounted on the first surface. The leads have distal ends positioned inside the through holes. An adhesive fills the region between the wiring board and the through-hole mount device. The adhesive fixes the through-hole mount device to the first surface. A surface mount device is soldered to the second surface and closes the through holes in which the leads are inserted. | 2008-11-20 |
20080286995 | TWO-PLUG ELECTRICAL OUTLET WITH DUAL VOLTAGE - A unique arrangement includes a duplex receptacle outlet providing two voltages. A first power wire supplying a first voltage is connected to the receptacle supplying a higher voltage. A second power wire is connected to both receptacles, and a neutral wire is connected to the receptacle supplying a lower voltage. In this manner, a standard electrical outlet need only be modified such that the receptacle has its plug interface modified to receive a standard higher voltage. | 2008-11-20 |
20080286996 | Connector arrangement, and method for mounting the same - An improved electrical connector is formed by stamping and bending a sheet of conductive metal, wherein as a preliminary step, a series of longitudinally-spaced openings are formed in the sheet to define a plurality of transversely extending strips from the side edges of which a pair of parallel spaced integral side walls extend, which sheet is coiled on a storage spool, and is subsequently unwound and fed toward a stamping station at which the transverse strips are severed at spaced separation points, thereby to define a connector body wall integral with the side walls. The side walls have portions that are simultaneously bent to form top, bottom and/or end walls which cooperate to define a chamber in which a spring contact is mounted. The connector is then connected an electrical component, such as a printed circuit board, in the manner of a surface mounted device (SMD). | 2008-11-20 |
20080286997 | CONNECTOR - A connector includes a first and a second terminal portions each having: a substrate pressing portion; a spacer pressing portion; and a fulcrum portion arranged between the substrate pressing portion and the spacer pressing portion, a spacer arranged between the spacer pressing portions of the first and the second terminal portions, and a clipping section formed of the substrate pressing portions of the first and the second terminal portions. The clipping section opens and closes while operating the fulcrum portions as a fulcrum. The spacer pressing portions of the first and the second terminal portions close via the fulcrum when the clipping section opens. | 2008-11-20 |
20080286998 | Pluggable module suppressing EMI / ESD leakage - A connecting apparatus includes equipment having a cabinet with an opening and a connector inside the cabinet. A module has an electrical circuit and a resilient conductor and is attachable to the cabinet through the opening and thereby pluggable to the equipment. When the module is plugged to the equipment, the electrical circuit of the module is connected to the connector of the equipment, the resilient conductor fills a gap in the opening between the module and the cabinet and the module and the cabinet is electrically connected, and static electricity charged on the module propagates through the resilient conductor to the cabinet. | 2008-11-20 |
20080286999 | Connector - A connector includes a base, at least one first terminal, an upper cover, and a sliding structure. The base includes two opposite sides for defining the receiving space. The first terminal includes a contact end and a fixed end, wherein the contact end is disposed in the receiving space and the fixed end extends outside the receiving space. The upper cover includes two opposite edges. The sliding structure is disposed on the two opposite sides of the base that correspond to the two opposite edges of the upper cover. In this sliding structure, the two opposite edges are able to slide along the two opposite sides. | 2008-11-20 |
20080287000 | ELECTRICAL CONNECTORS, MATING CONNECTOR ASSEMBLIES, ELECTRICAL TERMINALS, AND METHODS FOR MAKING SAME - An electrical connector according to one embodiment of the invention may include a terminal body that defines an opening therein that includes a plurality of alignment ribs. An electrical terminal is positioned within the opening so that the plurality of alignment ribs align the electrical terminal within the opening in the terminal body. | 2008-11-20 |
20080287001 | DC plug connector - A pin connector assembly comprising a socket ( | 2008-11-20 |
20080287002 | SET OF CIRCUIT BOARD CONNECTORS - A horizontal connector ( | 2008-11-20 |
20080287003 | Electrical connector - An electrical connector comprises an insulative housing, a plurality of terminals assembled to the insulative housing and a pair of fastening elements assembled to the insulative housing. The insulative housing comprises an elongated base portion and a pair of retaining slots respectively disposed at two sides thereof. The base portion defines a mating face and an engaging face opposite to the mating face. A pair of fastening elements are assembled to the pair of retaining slots of the insulative housing, each fastening element comprises a fixing portion received in the retaining slot and a resilient arm disposed outside of the retaining slot and opposite to the fixing portion. | 2008-11-20 |
20080287004 | Card connector - A card connector includes a base, a cover, a detection switch, and a plurality of contacts for contacting with a card. The cover is pivotally supported on one end portion of the base to be freely rotatable. Further, the cover has a card receptacle portion to insert and remove a card, and is horizontally slidable along the base with the card retained in the card receptacle portion. The detection switch detects whether the card is inserted into the card connector when the cover horizontally slides along the base toward the one end portion of the base, and the detection switch contacts with the card horizontally sliding along with the cover. | 2008-11-20 |
20080287005 | Connector - A connector for electrically connecting a primary side mating connector having contacts and a secondary mating connector having contacts. The connector has parallelly arranged flexible cables and connectors provided at both ends of the cable and individually connected to the primary and secondary mating connectors. The number of the primary side contacts is less than the number of the secondary side contacts, and at least some of the secondary side contacts are connected to one cable that is shared by a set of contacts. The primary side mating connectors are fixed on a circuit board. The secondary mating connector is assembled in an information device that is movable on a mounting surface. | 2008-11-20 |
20080287006 | Electrical connector - An electrical connector, of the type constituted by a box-like body with a closure cover which is associated therewith by way of a film hinge and inside which there is at least one first seat, with an opening for access on the part of the cover, for a female electrical connection terminal for an electrical cable and at least one optional contiguous second seat, which is open onto a corresponding first seat, for a male electrical terminal to be mated with the female terminal; at the free end of the cover there is at least one tab in which there is an engagement slot for a corresponding tooth which protrudes from the box-like body. At the edge of the box-like body arranged between the film hinge and the at least one opening for accessing the corresponding first seat there is a space for the free flexing of the film hinge. | 2008-11-20 |
20080287007 | CONNECTOR FOR FIRST AND SECOND JOINTS HAVING DIFFERENT PIN QUANTITIES, ELECTRONIC APPARATUS WITH CONNECTOR AND COMBINATION - A connector and an electronic apparatus and a combination comprising the connector for first and second joints are disclosed. The connector includes a base, a plurality of first pins, and a plurality of second pins. The base has a first and a second connecting surface. The first pins are disposed on the first connecting surface and the quantity of the first pins is the same as the pin quantity of the first joint. In addition, the second pins are disposed on the second connecting surface and the total quantity of the second pins and the first pins is the same as the pin quantity of the second joint. The base may include two convex parts and a concave part. The first connecting surface and the second connecting surface are disposed on surfaces of the two convex parts respectively. The concave part accommodates the two convex parts. | 2008-11-20 |
20080287008 | Electronic device having molded resin case, and molding tool and method of manufacturing the same - An electronic device includes an electronic circuit section, a case, and a connector housing. The electronic circuit section includes a connector terminal. The case seals the electronic circuit section in such a manner that the connector terminal protrudes to an outside of the case. The connector housing is integrated with the case and has an approximately cylindrical shape to surround an outer circumference of the connector terminal. The case and the connector housing are made of resin with a molding tool by filling resin into a case cavity and a connector-housing cavity of the molding tool in a state where the electronic circuit section is held by a holding portion of the molding tool. | 2008-11-20 |
20080287009 | ADAPTER WITH AN ACCESS PANEL FOR AN ELECTRONIC DEVICE - An adapter for removably coupling an electronic device to a host and a modular system of the host, adapter and electronic device. The adapter comprises a main body, a first interface capable of coupling with the appliance, a cavity in the main body receiving the electronic device, a second interface within the cavity coupling with the electronic device; and an access panel removably mounted to the main body to selectively close the opening of the cavity. | 2008-11-20 |
20080287010 | ELECTRICAL CONNECTOR ASSEMBLY WITH A WEDGE AND LUBRICANT - An electrical connector assembly for power utility transmission conductors includes a first conductive member having a tap conductor engagement surface adapted for interfacing with a tap conductor and a main conductor engagement surface adapted for interfacing with a main conductor. The first conductive member also includes a conductive member engagement surface adapted for interfacing with a second conductive member. The second conductive member is mechanically and electrically coupled to the first conductive member. The second conductive member has a tap conductor engagement surface adapted for interfacing with the tap conductor and a main conductor engagement surface adapted for interfacing with the main conductor. The second conductive member also includes a conductive member engagement surface adapted for interfacing with the conductive member engagement surface of the first conductive member. A lubricant is applied to at least one engagement surface of the first conductive member, and is applied to at least one engagement surface of the second conductive member. | 2008-11-20 |
20080287011 | Female electrical terminal - A female electrical terminal, comprising at least one pair of mutually opposite leaf spring laminas, which are adapted to provide an accommodation and contact region for an associated blade-like male terminal. A first lamina is provided with a protrusion for contact with the blade-like male terminal, while a second opposite lamina has an extraction-preventing tooth which is designed to be inserted with a snap action in the hole of the interposed blade-like male terminal. | 2008-11-20 |
20080287012 | Terminal for a Connector and a Connector - A connector includes a pair of terminals. Each of the terminals includes a housing and a connecting portion. The connecting portion is arranged in the housing. The connecting portion has a first end provided with a connecting member for connection of an electrical cable and a second end provided with a first blade and second blade arranged side by side. The first blade has a fitting arrangement and the second blade having a spring arrangement. The fitting arrangements of the first blades of the terminals are engaged to mate the terminals. | 2008-11-20 |
20080287013 | Connector - A connector, comprising a connector body ( | 2008-11-20 |
20080287014 | Terminal for enameled electric wires - A terminal for enameled electric wires, of the type constituted by a plate-like body which forms a connecting fork with tabs which cantilever inward on the same plane of arrangement as the plate-like body; the tabs face each other so as to form a self-centering tapered opening for guiding the insertion of an electric wire with insulating enameling, the wire being adapted to be locked between the ends of the tips of the tabs and an abutment formed on the plate-like body proximate to the ends, with an axis which lies transversely to the arrangement of the plate-like body; the tips form a cut-through slot whose transverse dimensions are smaller than the diameter of the enameled wire, so as to cut through at least its insulating layer during its passage between them and provide electrical contact. At least one of the facing edges of the cut-through tips has a serrated portion in order to scrape and remove the layer of enamel from the surface of the enameled electric wire. | 2008-11-20 |
20080287015 | CONNECTOR COVER STRUCTURE OF BILL STORAGE BOX - Disclosed is a connector cover structure of a bill storage box, which can prevent a connector for electric power supply from being exposed to dust or foreign substances, during the process of mounting or dismounting a cassette box in or from the bill storage box. The disclosed connector cover structure includes: a connector-fixing bracket fixedly assembled with the connector, and having assembling holes formed through opposite sides of the connector-fixing bracket; a cover having a hinge shaft rotatably fitted in the assembling holes of the connector-fixing bracket, thereby covering a connecting pin; a contact part protruded by a certain length in front of one end of the cover, and having a curved shape; and elastic springs fixedly assembled to the hinge shaft in such a manner that the cover can be returned to its original position. Accordingly, it is possible to prevent poor connection or electrical short circuiting by preventing the exposure of the connector to dust or foreign substances. | 2008-11-20 |
20080287016 | Electric Motor-Driven Water Craft, Which is Cooled by the Surrounding Water - An electric motor-driven water craft including a fuselage, on which a user can at least partially lie or stand. The fuselage has a flow channel with a screw that is driven by an electric motor and contains the electric motor and batteries, in addition to a control device for the electric motor and the screw, and those items are housed at least partially in the flow channel. This invention provides a higher power for motor-driven water craft of this type by locating the batteries in a water-tight housing. At least some sections of the batteries are in thermally conductive contact with the housing. The housing can be at least partially of a thermally conductive material and/or the electric motor is an internal-rotor motor. The stator is in thermal conductive contact with a housing of the electric motor by a heat conducting unit. At least part of the region of the housing that is assigned to the heat conducting unit can be of a thermally conductive material and the housing can be located at least partially in the flow channel. | 2008-11-20 |
20080287017 | Surfboard and Method of Construction - Disclosed is a surfboard ( | 2008-11-20 |
20080287018 | Stealth tail quad surfboard - A tail section for a surfboard includes a substantially v-shaped notch or cutout intersecting substantially trailing edges formed between two points. Each of the substantially straight trailing edges extend to the arcuate side of the body of the surfboard. | 2008-11-20 |
20080287019 | Modified Polyolefin Surfaces - Surface modifiable polyolefins are disclosed that allow for the covalent attachment of further chemical entities. The surface modification does not leach from the polyolefin. Example embodiments include the covalent bonding of antimicrobial chemical entities to the modified surfaces to provide antimicrobial polyolefin films and fibres for use in packaging and non-wovens. | 2008-11-20 |
20080287020 | METHOD AND COMPOSITION FOR TREATING FIBROUS SUBSTRATES - Embodiments of the present disclosure include soil repellent compositions, methods for imparting resistance to soiling on a fibrous substrate, fibrous substrates to which a soil repellent composition has been applied and dried, methods of making soil repellent compositions, and the like. | 2008-11-20 |
20080287021 | SMC SHEET AND METHOD FOR MANUFACTURING THE SAME - A SMC sheet includes: a sheet material body made of a resin compound containing uncured thermosetting resin; and a fiber sheet embedded as an intermediate layer in the sheet material body and impregnated with the thermosetting resin of the sheet material body. Short fiber is distributed on at least one side of the fiber sheet in the sheet material body. | 2008-11-20 |
20080287022 | FABRIC AND YARN STRUCTURES FOR IMPROVING SIGNAL INTEGRITY IN FABRIC-BASED ELECTRICAL CIRCUITS - Coaxial and twisted pair conductive yarn structures reduce signal crosstalk between adjacent lines in woven electrical networks. A coaxial conductive yarn structure includes an inner conductive yarn having a plurality of conductive strands twisted together. An outer conductive yarn is wrapped around the inner conductive yarn. An insulating layer separates the inner and outer yarns. A twisted pair conductive yarn structure includes first and second conductive yarns, each including a plurality of conductive strands being twisted together. The first and second conductive yarns are twisted together to form a helical structure. In a woven electrical network, at least one conductor of adjacent conductive yarn structures is connected to ground to reduce signal crosstalk. Coaxial and twisted pair yarn structures may also be formed simultaneously with weaving or knitting the threads that make up the structures into a fabric. | 2008-11-20 |
20080287023 | Heat Resistant Laminate and Method for Manufacturing Such Laminate - According to the invention, there is provided a more heat-resistant laminate comprising a metal foil, a fabric, and bonding means between the metal foil and the fabric, wherein the bonding means are a flouropolymer foil functioning as an adhesive film for bonding the fabric and the metal foil together. Hereby, an impermeable laminate is provided which is flexible and can withstand higher temperatures without delaminating. A laminate according to the invention can be mounted directly against hot components with temperatures up to 550° C. when the fabric is a woven glass fabric and as high as 1100° C. if the fabric is ceramic. The bonding means are stabile in temperatures up to 290° C. and provides a stabile and durable bonding also during temperature exposure of the laminate of 310° C. for an extended period of time. | 2008-11-20 |
20080287024 | Biodegradable Continuous Filament Web - A biodegradable nonwoven web comprising substantially continuous multicomponent filaments is provided. The filaments comprise a first component and a second component. The first component contains at least one high-melting point aliphatic polyester having a melting point of from about 160° C. to about 250° C. and the second component contains at least one low-melting point aliphatic polyester. The melting point of the low-melting point aliphatic polyester is at least about 30° C. less than the melting point of the high-melting point aliphatic polyester. The low-melting point aliphatic polyester has a number average molecular weight of from about 30,000 to about 120,000 Daltons, a glass transition temperature of less than about 25° C., and an apparent viscosity of from about 50 to about 215 Pascal-seconds, as determined at a temperature of 160° C. and a shear rate of 1000 sec | 2008-11-20 |
20080287025 | Nonwovens, Method for the Production Thereof and the Use Thereof - The invention relates to a method for the production of nonwovens, in which a solution of cellulose carbamate in N-methylmorpholine-N-oxide is forced through the holes of a nozzle beam and is stretched by a multiple by means of an airflow. The fibre curtain which is formed is laid down on a perforated conveyer belt, washed and dried. The invention likewise relates to nonwovens of this type and the use thereof. | 2008-11-20 |
20080287026 | Biodegradable Nonwoven Laminate - A biodegradable nonwoven laminate is provided. The laminate comprises a spunbond layer formed from substantially continuous filaments that contain a first aliphatic polyester having a melting point of from about 50° C. to about 160° C. The meltblown layer is formed from microfibers that contain a second aliphatic polyester having a melting point of from about 50° C. to about 160° C. The first aliphatic polyester, the second aliphatic polyester, or both have an apparent viscosity of from about 20 to about 215 Pascal-seconds, as determined at a temperature of 160° C. and a shear rate of 1000 sec-1. The first aliphatic polyester may be the same or different than the second aliphatic polyester. | 2008-11-20 |
20080287027 | POLYPROPYLENE NONWOVEN FABRIC AND USE THEREOF - A polypropylene based nonwoven fabric is excellent in surface appearance and stretch properties and exhibits a small residual strain and excellent adhesiveness to polyolefins. The nonwoven fabric is obtained by forming a polypropylene resin composition comprising 1 to 40 weight parts of (i) an isotactic polypropylene, and 60 to 99 weight parts of (ii) a propylene/ethylene/α-olefin copolymer obtained by copolymerizing 45 to 89 mole % of propylene, 10 to 25 mole % of ethylene and the balance of α-olefin having 4 to 20 carbon atoms (with the proviso that the copolymerized amount of the α-olefin having 4 to 20 carbon atoms does not exceed 30 mole %), characterized by a small residual strain after stretching at a stretch ratio of 150%. The nonwoven fabric can be effectively used as sanitary materials or the like by virtue of its characteristics including stretch properties. | 2008-11-20 |
20080287028 | METHOD OF MANUFACTURING DISPLAY UNIT - A laminated structure is formed by placing a cover substrate over a device substrate with a projection structure in between in the vacuum atmosphere. Next, the laminated structure is taken out into the air in a state that a space between the device substrate and the cover substrate is maintained in the vacuum atmosphere. Subsequently, the portion of the organic layer formed on the auxiliary electrode is removed by irradiating laser light to the laminated structure. Since the space between the device substrate and the cover substrate is maintained in the vacuum atmosphere, even if the laser light is emitted to the laminated structure taken out into the air, the laser light is emitted to the portion of the organic layer formed on the auxiliary electrode in the vacuum atmosphere. | 2008-11-20 |
20080287029 | Array substrate having color filter on thin film transistor structure for LCD device and method of fabricating the same - An array substrate device includes a gate line formed on a substrate extending along a first direction having a gate electrode, a data line formed on the substrate extending along a second direction having a data pad disposed apart from a first end of the data line, the data and gate lines defining a pixel region, a gate pad formed on the substrate disposed apart from a first end of the gate line, a thin film transistor formed at a crossing region of the gate and data lines and including the gate electrode, a semiconductor layer, a source electrode, and a drain electrode, a black matrix overlapping the thin film transistor, the gate line, and the data line except for a first portion of the drain electrode, a first pixel electrode at the pixel region contacting the first portion of the drain electrode and the substrate, a color filter on the first pixel electrode at the pixel region, and a second pixel electrode on the color filter contacting the first pixel electrode. | 2008-11-20 |
20080287030 | METHOD OF FABRICATING CARBIDE AND NITRIDE NANO ELECTRON EMITTERS - This invention discloses novel field emitters which exhibit improved emission characteristics combined with improved emitter stability, in particular, new types of carbide or nitride based electron field emitters with desirable nanoscale, aligned and sharped-tip emitter structures. | 2008-11-20 |
20080287031 | Dual flying discs - An apparatus for playing a throwing and catching game. The apparatus comprises a first disc member being formed of a first predetermined material and having each of a first predetermined shape and a first predetermined size and a second disc member engageable with the first disc member and being formed of a second predetermined material and having each of a second predetermined shape and a second predetermined size, such second predetermined size being smaller than the first predetermined size such that the second disc member nests inside the first disc member so that when the apparatus is thrown the second disc and the first disc separate and are caught as two separate discs. | 2008-11-20 |
20080287032 | INFANT VIEWING AUTO MIRROR - An infant viewing auto mirror comprising a main panel having a reflective surface (i.e., mirror) exposed in the front side or surface thereof, and a flap affixed to the rear surface thereof. The flap is releasably secured to the rear surface of the main panel through the use of complimentary snaps. In addition to the main panel, the auto mirror comprises a mounting strap which is extensible about and removably attachable to a headrest through the use of a strip of Velcro disposed adjacent one end of the strap which is itself releasably engageable to a portion of the strap adjacent the opposite end thereof. Protruding from one side of the strap in the approximate center thereof is a dome-shaped support fabricated from hard foam. Extending diametrically across the support is a strip of fabric material. When the strap is properly secured to the headrest, the foam support (and hence the strip) is forwardly presented. The main panel is cooperatively engaged to the strap by advancing or “threading” the flap of the main panel between the fabric strip and foam support of the strap, the main panel being maintained in releasable engagement to the strap by thereafter snapping the flap to the rear surface of the main panel. | 2008-11-20 |
20080287033 | Personalizable Doll - A doll that can be personalized to display a familiar image and/or play a recorded sound comprises a body, a head and a digital display in the head. | 2008-11-20 |
20080287034 | Musical Cracker - A cracker ( | 2008-11-20 |
20080287035 | Sound Producing Play Apparatus - An apparatus includes a support member, a moveable member supported by the support member, a user support mechanically associated with the moveable member, and a sound producing mechanism that produces sound as a result of movement of the moveable member between a first position and a second position caused by the user's application of force to the urge the moveable member between the first position and second position. The applications include a play apparatus, wherein the user interacts with the moveable member with the result that the moveable member changes position and a selected sound is thereby produced. | 2008-11-20 |
20080287036 | Gas permeable athletic breast restraint - A breast restraint apparatus encircling an upper torso during vigorous activities such as jogging is made up of a flexible, stretchable and compressible elongated panel having a porous neoprene inner layer bonded to a synthetic fiber layer on one or both sides thereby forming a multi-layer integral assembly. A hook type fastener material layer is joined to the panel at one end and a loop type fastener material layer is bonded to the opposing end of the panel. The two ends of the panel are formed as semicircles and may be joined for encircling the torso of an exerciser. | 2008-11-20 |
20080287037 | Adhesively Supporting a Breastshield - A breastshield is provided that may be adhesively secured to a mother's breast for use in a breastpumping system. The adhesive is sufficiently strong so as to independently support the breastshield in position throughout a breast pumping session, including supporting the milk container, thereby enabling the mother to participate in other activities during the pumping session. The adhesive is advantageously of a type that is readily removed from the breast with the breastshield, and most preferably without leaving any significant residue. | 2008-11-20 |
20080287038 | Polishing composition for semiconductor wafer, method for production thereof and polishing method - The present invention relates to a polishing composition for a substrate including a metal such as wiring, etc., formed on a semiconductor wafer, which can provide a high polishing rate without causing scratches on the wiring metal, a method of producing the polishing composition, and a polishing method. The polishing composition for a semiconductor wafer comprises an acid and an aqueous medium dispersion containing positively-charged silica particles having an amino group-containing silane coupling agent bonded on a surface thereof, the polishing composition having a pH of 2 to 6. | 2008-11-20 |
20080287039 | ABRASIVE BLASTING SYSTEM WITH REMOTE FLOW CONTROL AND METHOD - A particulate blasting apparatus includes a blast vessel having an interior for storing abrasive particulate. The blast vessel has an inlet for introducing a pressurized gas into the interior of the blast vessel and an outlet for allowing the passage of the pressurized gas and particulate. A flexible blast hose is coupled at one end to the outlet for directing particulate flow from the outlet and a blast nozzle is coupled to an opposite end of the blast hose. A metering valve regulates different amounts of particulate flow from the blast vessel through the outlet. A flow actuator is coupled to the metering valve for actuating the metering valve. A controller associated with the blast nozzle in communication with the actuator controls the actuator from the blast nozzle during blasting operations. The blasting apparatus may be used as part of a blasting system that includes a compressor unit for providing the pressurized gas. A method of blasting an area is achieved by controlling the amount of particulate provided to the blast nozzle from the blast nozzle through the controller associated with the blast nozzle while pressurized gas is flowing through the blast nozzle and directing a particulate flow from the blast nozzle to the area. | 2008-11-20 |
20080287040 | Method and Device for Generating Dry Ice Particles - A method for generating a jet of dry ice particles, in which liquid carbon dioxide is expanded in an expansion space ( | 2008-11-20 |
20080287041 | System and Method for Removing Particles From a Polishing Pad - A system for removing particles from a polishing pad to improve the efficiency of the removal of material by the polishing pad as part of a chemical-mechanical polishing process, the system comprising a polishing pad; a fluid dispenser arranged to dispense a fluid on the polishing pad; and removal means, wherein the removal means include a heater for increasing the temperature of the fluid dispensed on the polishing pad, and/or voltage means for coupling the polishing pad to a voltage source for repelling charged particles from the polishing pad surface while the fluid dispenser is dispensing the fluid on the polishing pad. | 2008-11-20 |
20080287042 | MANUFACTURE OF LAPPING BOARD - A method for manufacturing a lapping board having abrasive grains fixed on its surface, which is performed by the steps of: preparing a rotatable metal board having a surface of soft metal, an abrasive slurry-supplying tool arranged over the surface of the metal board, an abrasive-pressing tool which is placed on the metal board and has a hard surface, and a ultrasonic oscillation-generating tool attached to either or both of the abrasive-pressing tool and the metal board; rotating the metal board while supplying an abrasive slurry onto the surface of the metal board and while supplying electric power to the ultrasonic oscillation-generating tool to generate and apply ultrasonic oscillation to either or both of the abrasive-pressing tool and the metal board, whereby introducing the supplied abrasive slurry between the metal board and the abrasive-pressing tool and partly embedding some abrasive grains onto the metal board; and removing unfixed abrasive grains from the metal board. | 2008-11-20 |
20080287043 | Polishing apparatus - A polishing apparatus is used for polishing a substrate such as a semiconductor wafer to a flat mirror finish. The polishing apparatus includes a polishing table having a polishing surface, a top ring configured to hold and press the substrate against the polishing surface, a top ring shaft configured to lift and lower the top ring, and an elongation detecting device configured to detect an elongation of the top ring shaft. The polishing apparatus further includes a controller configured to set a vertical position of the top ring at the time of polishing, and control a lifting and lowering mechanism to lower the top ring to a preset polishing position as the set vertical position. The controller corrects the preset polishing position based on the elongation of the top ring shaft which has been detected by the elongation detecting device. | 2008-11-20 |
20080287044 | Method of transferring a wafer - A method of transferring a wafer is disclosed. The method comprises providing a pedestal and at least one spray orifice extending through the pedestal; disposing a wafer above the pedestal using a first robot, wherein the wafer has a first surface and a second surface, the first surface faces the pedestal, a fluid is sprayed onto the first surface simultaneously to avoid a contact of the first surface with the pedestal, and the fluid contains a charge-forming chemical substance dissolved therein; and taking the wafer using a robot for delivery. Due to the charge-forming chemical substance dissolved in the fluid, the waterfall effect to cause discharge damage on the wafer is avoided in the spraying of the fluid. | 2008-11-20 |