46th week of 2011 patent applcation highlights part 43 |
Patent application number | Title | Published |
20110281403 | Method For Encapsulating Semiconductor Dies - The present invention describes two methods ( | 2011-11-17 |
20110281404 | METHOD OF SEALING A SEMICONDUCTOR ELEMENT WITH AN EPOXY RESIN COMPOSITION - A method of sealing a semiconductor element which involves applying an epoxy resin composition including an epoxy resin and a phenolic resin obtained by reacting phenol, a biphenyl compound represented by the general formula (3) and benzaldehyde to a semiconductor element and curing the composition to seal the semiconductor element: | 2011-11-17 |
20110281405 | METHOD OF FABRICATING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device and semiconductor device is provided. The method provides a first layer. The first layer includes through-holes. At least one semiconductor chip is provided. The semiconductor chip includes contact elements. The semiconductor chip is placed onto the first layer with the contact elements being aligned with the through-holes. An encapsulant material is applied over the semiconductor chip. | 2011-11-17 |
20110281406 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A manufacturing method is disclosed which ensures strength of a wafer and improves device performance. A thermal diffusion layer is formed from a front surface of a wafer. A tapered groove which reaches the thermal diffusion layer is formed from a back surface by anisotropic etching with alkaline solution. In-groove thermal diffusion layer is formed on side wall surfaces of the groove. A separation layer of a reverse blocking IGBT is configured of the thermal diffusion layer and the in-groove diffusion layer. The thermal diffusion layer is formed shallowly by forming the in-groove diffusion layer. It is possible to considerably reduce thermal diffusion time. By carrying out an ion implantation forming the in-groove diffusion layer and an ion implantation forming a collector layer separately, it is possible to select an optimum value for tradeoff between turn-on voltage and switching loss, while ensuring reverse blocking voltage of the reverse blocking IGBT. | 2011-11-17 |
20110281407 | STRAINED SEMICONDUCTOR BY FULL WAFER BONDING - One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein. | 2011-11-17 |
20110281408 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - In a semiconductor device and associated methods, the semiconductor device includes a substrate, an insulation layer on the substrate, a conductive structure on the insulation layer, the conductive structure including at least one metal silicide film pattern, a semiconductor pattern on the conductive structure, the semiconductor pattern protruding upwardly from the conductive structure, a gate electrode at least partially enclosing the semiconductor pattern, the gate electrode being spaced apart from the conductive structure, a first impurity region at a lower portion of the semiconductor pattern, and a second impurity region at an upper portion of the semiconductor pattern. | 2011-11-17 |
20110281409 | Semiconductor Structures Using Replacement Gate and Methods of Manufacture - An improved semiconductor device manufactured using, for example, replacement gate technologies. The method includes forming a dummy gate structure having a gate stack and spacers. The method further includes forming a dielectric material adjacent to the dummy gate structure. The method further includes removing the spacers to form gaps, and implanting a halo extension through the gaps and into an underlying diffusion region. | 2011-11-17 |
20110281410 | METHOD FOR FABRICATING A SEMICONDUCTOR DEVICE HAVING AN EPITAXIAL CHANNEL AND TRANSISTOR HAVING SAME - A transistor having an epitaxial channel and a method for fabricating a semiconductor device having an epitaxial channel, the method including forming a hardmask on a substrate and forming an opening in the hardmask. The opening is geometrically characterized by a long dimension and a short dimension, and the opening is arranged in a predetermined manner relative to the channel region of a transistor. An epitaxial material is formed in the opening that induces strain in substrate regions proximate to the epitaxial material. The epitaxial material is confined to the opening, such that an epitaxial channel is formed. A transistor is fabricated in proximity to the epitaxial channel, such that the strain induced in the substrate provides enhanced transistor performance. By confining the epitaxial material to a predefined channel in the substrate, plastic strain relaxation of the epitaxial material is minimized and a maximum amount of strain is induced in the substrate. | 2011-11-17 |
20110281411 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An amorphous silicon layer and a single crystal silicon layer are formed in an upper portion of a silicon pillar. Then, by performing the selective epitaxial growth method twice, an amorphous silicon layer and an amorphous silicon germanium layer are formed in this order on the silicon pillar. Subsequently, by heat treatment, a second impurity diffusion layer including a single crystal silicon layer is formed in the upper portion of the silicon pillar. At the same time of the formation of the second impurity diffusion layer, a first contact plug including a single crystal silicon layer and a polycrystalline silicon germanium layer is formed on the silicon pillar. Then, a second contact plug made of metal is formed so that it is connected to the first contact plug. | 2011-11-17 |
20110281412 | PRODUCTION OF A TRANSISTOR GATE ON A MULTIBRANCH CHANNEL STRUCTURE AND MEANS FOR ISOLATING THIS GATE FROM THE SOURCE AND DRAIN REGIONS - A method for fabricating a microelectronic device comprising: a support, an etched stack of thin layers comprising: at least one first block and at least one second block resting on the support, in which at least one drain region and at least one source region, respectively, are capable of being formed, several semiconductor bars connecting a first zone of the first block and another zone of the second block, and able to form a multi-branch transistor channel, or several transistor channels, the device also comprising: a gate surrounding said bars and located between said first block and said second block, the gate being in contact with a first and a second insulating spacer in contact with at least one sidewall of the first block and with at least one sidewall of the second block, respectively, and at least partially separated from the first block and the second block, via said insulating spacers. | 2011-11-17 |
20110281413 | CONTACT HOLE, SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - The invention provides a method for forming a contact hole, comprising: forming a gate, a sidewall spacer, a sacrificial sidewall spacer, a source region and a drain region on a substrate, wherein the sidewall spacer is formed around the gate, the sacrificial sidewall spacer is formed over the sidewall spacer, and the source region and the drain region are formed within the substrate and on respective sides of the gate; forming an interlayer dielectric layer, with the gate, the sidewall spacer and the sacrificial sidewall spacer being exposed; removing the sacrificial sidewall spacer to form a contact space, a material that the sacrificial sidewall spacer is made of being different from any of materials that the gate, the sidewall spacer and the interlayer dielectric layer are made of; forming a conducting layer to fill the contact space; and cutting off the conducting layer, to form at least two conductors connected to the source region and the drain region respectively. The invention also provides a contact hole, the contact hole a gate and a sidewall spacer being formed on a substrate and within an interlayer dielectric layer, wherein the sides of the contact hole meet the sidewall spacer. The invention also provides a semiconductor device and a method for forming the same. With the technical solutions provided by the invention, the number of masks used can be reduced. | 2011-11-17 |
20110281414 | SEMICONDUCTOR PROCESSING - Devices, methods, and systems for semiconductor processing are described herein. A number of method embodiments of semiconductor processing can include forming a silicon layer on a structure, forming an opening through the silicon layer and into the structure, and selectively forming a resistance variable material in the opening such that the resistance variable material does not form on the silicon layer. | 2011-11-17 |
20110281415 | METHODS OF FORMING AN ISOLATION LAYER AND METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES HAVING AN ISOLATION LAYER - In a method of forming an isolation layer, first and second trenches are formed on a substrate. The first and the second trenches have first and second widths, respectively, and the second width is greater than the first width. A second isolation layer pattern partially fills the second trench. A first isolation layer pattern and the third isolation layer pattern are formed. The first isolation layer pattern fills the first trench, and the third isolation layer pattern is formed on the second isolation layer pattern and fills a remaining portion of the second trench. | 2011-11-17 |
20110281416 | Manufacturing method of semiconductor device - The present invention provides a manufacturing method of a semiconductor device including: a step of forming a shallow trench on a semiconductor substrate; a step of forming an insulating layer in the shallow trench; and a step of forming a deep trench in the shallow trench, the deep trench penetrating through the insulating layer and being deeper than the shallow trench; wherein the step of forming the deep trench includes to form a first deep trench including an inner side face having a first taper angle with respect to the semiconductor substrate; and form a second deep trench including an inner side face having a second taper angle with respect to the semiconductor substrate, wherein the second taper angle is different from the first taper angle. | 2011-11-17 |
20110281417 | VAPOR DEPOSITION OF SILICON DIOXIDE NANOLAMINATES - This invention relates to materials and processes for thin film deposition on solid substrates. Silica/alumina nanolaminates were deposited on heated substrates by the reaction of an aluminum-containing compound with a silanol. The nanolaminates have very uniform thickness and excellent step coverage in holes with aspect ratios over 40:1. The films are transparent and good electrical insulators. This invention also relates to materials and processes for producing improved porous dielectric materials used in the insulation of electrical conductors in microelectronic devices, particularly through materials and processes for producing semi-porous dielectric materials wherein surface porosity is significantly reduced or removed while internal porosity is preserved to maintain a desired low-k value for the overall dielectric material. The invention can also be used to selectively fill narrow trenches with low-k dielectric material while at the same time avoiding deposition of any dielectric on the surface area outside of the trenches. | 2011-11-17 |
20110281418 | SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to an aspect of the present invention, there is provided a semiconductor memory device including: a semiconductor substrate having: first device regions divided by first isolation films and second device regions divided by second isolation films a gate insulating film formed on the semiconductor substrate; a first element including: a first gate formed on the gate insulating film in the first device regions, a first inter-electrode insulating film formed on the first gate and on the first isolation films, and a second gate formed on the first inter-electrode insulating film; and a second element including: a third gate formed on the gate insulating film in the second device regions, and a fourth gate formed on the third gate and on the second isolation films; wherein a thickness of the third gate is larger than a thickness of the first gate. | 2011-11-17 |
20110281419 | METHOD FOR MANUFACTURING DIELECTRIC ISOLATION TYPE SEMICONDUCTOR DEVICE - A method for manufacturing a dielectric isolation type semiconductor device comprises: forming a plurality of trenches in a first region on a major surface of a semiconductor substrate; forming a first dielectric layer on the major surface of the semiconductor substrate and a first thick dielectric layer in the first region by oxidizing a surface of the semiconductor substrate; bonding a semiconductor layer of a first conductive type to the semiconductor substrate via the first dielectric layer; forming a first semiconductor region by implanting an impurity into a part of the semiconductor layer above the first thick dielectric layer; forming a second semiconductor region by implanting an impurity of a second conductive type into a part of the semiconductor layer so as to surround the first semiconductor region separating from the first semiconductor region. | 2011-11-17 |
20110281420 | METHOD FOR MANUFACTURING SOI WAFER - A method for manufacturing an SOI wafer including implanting a gas ion into a bond wafer from a surface thereof to form an ion-implanted layer; bonding the ion-implanted surface of the bond wafer to a surface of a base wafer through an insulator film; and delaminating the bond wafer at the ion-implanted layer to manufacture the SOI wafer. The method further includes immersing the bonded wafer prior to the delamination of the bond wafer at the ion-implanted layer into a liquid capable of dissolving the insulator film or exposing the bonded wafer to a gas capable of dissolving the insulator film so that the insulator film located between the bond wafer and the base wafer is etched from an outer circumferential edge toward a center of the bonded wafer. | 2011-11-17 |
20110281421 | PROCESS FOR PRODUCING POWDERS OF GERMANIUM - A method of producing a powder of crystalline germanium. | 2011-11-17 |
20110281422 | METHOD FOR OBTAINING HIGH-QUALITY BOUNDARY FOR SEMICONDUCTOR DEVICES FABRICATED ON A PARTITIONED SUBSTRATE - One embodiment of the present invention provides a process for obtaining high-quality boundaries for individual multilayer structures which are fabricated on a trench-partitioned substrate. During operation, the process receives a trench-partitioned substrate wherein the substrate surface is partitioned into arrays of isolated deposition platforms which are separated by arrays of trenches. The process then forms a multilayer structure, which comprises a first doped layer, an active layer, and a second doped layer, on one of the deposition platforms. Next, the process removes sidewalls of the multilayer structure. | 2011-11-17 |
20110281423 | METHOD OF PRODUCING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER - A method of producing a semiconductor wafer includes placing a base wafer within a reaction chamber, and epitaxially growing a p-type Group 3-5 compound semiconductor on the base wafer by supplying, into the reaction chamber, a Group 3 source gas consisting of an organometallic compound of a Group 3 element, a Group 5 source gas consisting of a compound of a Group 5 element, and an impurity gas including an impurity that is to be incorporated as a dopant into a semiconductor to serve as a donor. Here, during the epitaxial growth of the p-type Group 3-5 compound semiconductor, the flow rate of the impurity gas and the flow rate ratio of the Group 5 source gas to the Group 3 source gas are set so that the product N×d (cm | 2011-11-17 |
20110281424 | Relaxed InGaN/AlGaN Templates - A relaxed InGaN template is formed by growing a GaN or InGaN nucleation layer at low temperatures on a conventional base layer (e.g., sapphire). The nucleation layer is typically very rough and multi-crystalline. A single-crystal InGaN buffer layer is then grown at normal temperatures on the nucleation layer. Although not necessary, the buffer layer is typically undoped, and is usually grown at high pressures to encourage planarization and to improve surface smoothness. A subsequent n-doped cap layer can then be grown at low pressures to form the n-contact of a photonic or electronic device. In some cases, a wetting layer—typically low temperature AlN—is grown prior to the nucleation layer. Other templates, such as AlGaN on Si or SiC, are also produced using the method of the present invention. | 2011-11-17 |
20110281425 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device includes forming a photoresist pattern on an insulating film formed on a semiconductor substrate by applying a photoresist on the insulating film; processing the insulating film by removing an unnecessary portion of the insulating film by wet etching; and implanting ions into the insulating film before and/or after forming the photoresist pattern. In implanting the ions, the depth of a damaged region formed in the insulating film by implanting the ions is changed in accordance with the presence or absence of the photoresist pattern. | 2011-11-17 |
20110281426 | SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME - A semiconductor device and a method of forming the semiconductor device includes: forming gate electrodes on a semiconductor substrate and forming spacers on both side surfaces of the gate electrodes; forming capping patterns on the gate electrodes; and forming a metal contact between the gate electrodes. Each of the capping patterns is formed to have a width greater than a width of each of the gate electrodes. | 2011-11-17 |
20110281427 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - Example embodiments herein relate to a method of fabricating a semiconductor device. The method may include forming a liner insulating layer on a surface of a gate pattern to have a first thickness. Subsequently, a gap fill layer may be formed on the liner insulating layer by flowable chemical vapor deposition (FCVD) or spin-on-glass (SOG). The liner insulating layer and the gap fill layer may be recessed such that the liner insulating layer has a second thickness, which is smaller than the first thickness, in the region in which a metal silicide will be formed. Metal silicide may be formed on the plurality of gate patterns to have a relatively uniform thickness using the difference in thickness of the liner insulating layer. | 2011-11-17 |
20110281428 | METHOD OF FABRICATING SEMICONDUCTOR DEVICE - A method of fabricating a semiconductor device in which a plurality of conductive lines having a fine pitch and a uniform thickness can be formed is provided. The method includes forming a plurality of first conductive patterns in a insulation layer as closed curves, forming a plurality of mask patterns on the insulation layer, the mask patterns exposing end portions of each of the first conductive patterns, and forming a plurality of second conductive patterns in the insulation layer as lines by removing the end portions of each of the first conductive patterns. | 2011-11-17 |
20110281429 | Multi-Layer Charge Trap Silicon Nitride/Oxynitride Layer Engineering with Interface Region Control - A non-volatile memory semiconductor device comprising a semiconductor substrate having a channel and a gate stack above the channel. The gate stack comprises a tunnel layer adjacent to the channel, a charge trapping layer above the tunnel layer, a charge blocking layer above the charge trapping layer, a control gate above the charge blocking layer, and an intentionally incorporated interface region between the charge trapping layer and the charge blocking layer. The charge trapping layer comprises a compound including silicon and nitrogen, the charge blocking layer contains an oxide of a charge blocking component, and the interface region comprises a compound including silicon, nitrogen and the charge blocking component. The tunnel layer may comprise up to three tunnel sub-layers, the charge trapping layer may comprise two trapping sub-layers, and the charge blocking layer may comprise up to five blocking sub-layers. Various gate stack formation techniques can be employed. | 2011-11-17 |
20110281430 | WAFER LEVEL PACKAGE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a wafer level package can include: forming an indentation, by etching one side of a semiconductor chip, on one side of which a chip pad is formed; forming a rewiring pattern, which is electrically connected with the chip pad and which includes a post pad having a corrugated shape in correspondence with the indentation, by selectively adding a conductive material on one side of the semiconductor chip; forming a sacrificial layer on one side of the semiconductor chip such that a window is formed in the sacrificial layer that completely or partially uncovers the post pad; forming a conductive post on the post pad, by filling the window with a conductive material; and removing the sacrificial layer. This method can be used to produce a wafer level package having a post structure that provides greater strength against lateral shear stresses. | 2011-11-17 |
20110281431 | METHOD OF PATTERNING THIN METAL FILMS - A Cu interconnect is formed with improved directionality and smoothness. Embodiments include wet etching Cu while applying a pulsing electric current. An embodiment includes forming a Cu layer, and patterning the Cu layer by exposing it to a wet etching solution which includes a passivating surface active agent while simultaneously applying an electric current. The etching solution may be a mild acid. A UV light may be applied simultaneously with the electric current. The electric current may be pulsed with a cycle frequency between 50 kHz and 500 kHz. | 2011-11-17 |
20110281432 | FLUORINE DEPLETED ADHESION LAYER FOR METAL INTERCONNECT STRUCTURE - A line trough and a via cavity are formed within a dielectric layer comprising a fluorosilicate glass (FSG) layer. A fluorine depleted adhesion layer is formed within the line trough and the via cavity either by a plasma treatment that removes fluorine from exposed surfaces of the FSG layer, or by deposition of a substantially fluorine-free dielectric layer. Metal is deposited within the line trough and the via cavity to form a metal line and a metal via. The fluorine depleted adhesion layer provides enhanced adhesion to the metal line compared with prior art structures in which a metal line directly contacts a FSG layer. The enhanced adhesion of metal with an underlying dielectric layer provides higher resistance to delamination for a semiconductor package employing lead-free C4 balls on a metal interconnect structure. | 2011-11-17 |
20110281433 | ETCHING METHOD USING AN AT LEAST SEMI-SOLID MEDIA - An etching method that uses an etch reactant retained within at least a semi-solid media ( | 2011-11-17 |
20110281434 | Methods of Forming Patterned Photoresist Layers Over Semiconductor Substrates - This invention comprises methods of forming patterned photoresist layers over semiconductor substrates. In one implementation, a semiconductor substrate is provided. An antireflective coating is formed over the semiconductor substrate. The antireflective coating has an outer surface. The outer surface is treated with a basic fluid. A positive photoresist is applied onto the outer surface which has been treated with the basic treating fluid. The positive photoresist is patterned and developed effective to form a patterned photoresist layer having increased footing at a base region of said layer than would otherwise occur in the absence of said treating the outer surface. Other aspects and implementations are contemplated. | 2011-11-17 |
20110281435 | FAST GAS SWITCHING PLASMA PROCESSING APPARATUS - A plasma chamber with a plasma confinement zone with an electrode is provided. A gas distribution system for providing a first gas and a second gas is connected to the plasma chamber, wherein the gas distribution system can substantially replace one gas in the plasma zone with the other gas within a period of less than 1 s. A first frequency tuned RF power source for providing power to the electrode in a first frequency range is electrically connected to the at least one electrode wherein the first frequency tuned RF power source is able to minimize a reflected RF power. A second frequency tuned RF power source for providing power to the plasma chamber in a second frequency range outside of the first frequency range wherein the second frequency tuned RF power source is able to minimize a reflected RF power. | 2011-11-17 |
20110281436 | CLEANING COMPOSITION, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE, AND CLEANING METHOD - Provided are a cleaning composition which is capable of inhibiting the metal of a semiconductor substrate from corrosion, and has an excellent removability of plasma etching residues and/or ashing residues on the semiconductor substrate, a method for producing a semiconductor device, and a cleaning method using the cleaning composition. The cleaning composition for removing plasma etching residues and/or ashing residues formed on a semiconductor substrate, and a preparation method and a cleaning method for a semiconductor device, using the cleaning composition, wherein the cleaning composition includes (Component a) water; (Component b) an amine compound; (Component c) hydroxylamine and/or a salt thereof; (Component d) a quaternary ammonium compound; (Component e) an organic acid; and (Component f) a water-soluble organic solvent; and has a pH of 6 to 9. | 2011-11-17 |
20110281437 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A semiconductor manufacturing apparatus includes a chamber, a gas supplier, a vacuum pump, an electrode, a conductive knitted wire mesh and a radio frequency power supply. The electrode is placed outside of the chamber and fixed to the chamber. The gas supplier supplies gas into the chamber. The vacuum pump exhausts the chamber. The radio frequency power supply supplies radio frequency power to the electrode through the conductive knitted wire mesh. | 2011-11-17 |
20110281438 | PULSED BIAS PLASMA PROCESS TO CONTROL MICROLOADING - A method for etching a conductive layer through a mask with wider and narrower features is provided. A steady state etch gas is flowed. A steady state RF power is provided to form a plasma from the etch gas. A pulsed bias voltage is provided during the steady state etch gas flow, wherein the pulsed bias voltage has a frequency between 1 to 10,000 Hz. Wider and narrower features are etched into the conductive layer using the plasma formed from the etch gas. | 2011-11-17 |
20110281439 | APPLYING WAFER BACKSIDE COATINGS TO SEMICONDUCTOR WAFERS - A method for coating a silicon wafer comprises depositing a coating onto the exposed side of the wafer such that the coating is deposited on the entire surface area of the exposed side of the wafer, reaching to the edge of the wafer. This method either reduces significantly or eliminates die-fly during dicing of semiconductor wafers, and is effective for depositing thin layers, such as are needed for Al paste electrodes in solar cell fabrication. | 2011-11-17 |
20110281440 | METHODS FOR NITRIDATION AND OXIDATION - Methods of nitridation and selective oxidation are provided herein. In some embodiments, a method of selectively forming an oxide layer on a semiconductor structure disposed on a substrate support in a process chamber is provided, wherein the semiconductor structure comprising a substrate, one or more metal-containing layers, and one or more non metal-containing layers. The method may include forming a first remote plasma from a first process gas comprising oxygen; and exposing the semiconductor structure to a reactive species formed from the first remote plasma to selectively form an oxide layer on the one or more non metal-containing layers, wherein a density of the reactive species is about 10 | 2011-11-17 |
20110281441 | Process of Localized Electrografting onto Photosensitive Semiconductor Substrates - The present invention relates to a process for preparing an organic film on a selected zone at the surface of a photosensitive semiconductor substrate, characterized in that it comprises the following steps: (i) bringing a liquid solution comprising at least one organic adhesion primer into contact with at least said selected zone; (ii) polarization of the surface of said substrate to an electric potential more cathodic than the reduction potential of the adhesion primer used in step (i); and (iii) exposure of said selected zone to light radiation, the energy of which is at least equal to that of the band gap of said semiconductor. | 2011-11-17 |
20110281442 | METHODS AND APPARATUS FOR FORMING NITROGEN-CONTAINING LAYERS - Methods and apparatus for forming nitrogen-containing layers are provided herein. In some embodiments, a method of forming a nitrogen-containing layer may include placing a substrate having a first layer disposed thereon on a substrate support of a process chamber; heating the substrate to a temperature of at least about 250 degrees Celsius; and exposing the first layer to a radio frequency (RF) plasma formed from a process gas consisting essentially of ammonia (NH | 2011-11-17 |
20110281443 | FILM FORMATION METHOD AND FILM FORMATION APPARATUS - The film formation method includes transferring an object to be processed into a process chamber; controlling a temperature of the object to be processed to be equal to or lower than 350° C.; and supplying an aminosilane gas as a Si source gas and an oxidizing gas into the process chamber, wherein the oxidizing gas consists of a first oxidizing gas comprising at least one selected from the group consisting of an O | 2011-11-17 |
20110281444 | EXPANSION DEVICE CONNECTABLE TO ELECTRONIC DEVICE - A portable computer 1 has a first metallic portion 6 and a second metallic portion 7, and an expansion device 10 has a first magnet 16 and a second magnet 17, whereby the expansion device 10 can be attached to a predetermined position of the portable computer 1 using attractive forces generated by the magnets. Therefore, when the portable computer 1 to which the expansion device 10 is attached is dropped mistakenly on a floor, etc., and the impact is applied on the expansion device 10, the expansion device 10 is separated from the portable computer 1 easily. Thus, even if the expansion device 10 is damaged, the impact to be transmitted to the portable computer 1 can be reduced by separating the expansion device 10 from the portable computer 1, which reduces damage to the portable computer 1. | 2011-11-17 |
20110281445 | SOCKET CONNECTOR ASSEMBLY WITH COMPRESSIVE CONTACTS - A socket connector assembly includes a housing, signal terminals, and a power module subassembly. The housing is mounted to a circuit board and includes opposing walls having internal surfaces. The signal terminals are joined to the internal surfaces of the walls and engage conductive members disposed along side edges of an electronic package that is received into the housing between the walls. The power module subassembly is coupled to the circuit board between the walls of the housing. The power module subassembly includes a power contact configured to engage a current carrying conductor disposed on a surface of the electronic package that extends between the side edges of the electronic package. | 2011-11-17 |
20110281446 | ELECTRICAL CARD CONNECTOR WITH IMPROVED CONTACTS - An electrical connector includes an insulative housing having an inserting slot, and a bottom wall under the inserting slot. The bottom wall defines a supporting surface extending along a front-to-back direction, a horizontal guiding surface located in front of the supporting surface, and a plurality of depressions recessed from the supporting surface and arranged in one row along a transverse direction perpendicular to the front-to-back direction. A plurality of first contacts each has a planar first contact portion retained in the depression. A plurality of second contacts each has an arc-shaped second contact portion extending upwardly beyond the supporting surface and protruding into the inserting slot. The second contact portions are located behind the first contact portions. | 2011-11-17 |
20110281447 | LOCKING DEVICE FOR POWER FEEDING PLUG - A power feeding plug for use with a power receiving connector includes a hook that engages the power receiving connector. A manual operation portion is operated to disengage the hook from the power receiving connector. A locking device selectively prohibits operation of the manual operation portion. The locking device includes a key cylinder operated by an authentic mechanical key. A lock mechanism moves in cooperation with the key cylinder. When the authentic mechanical key operates the key cylinder, the lock mechanism is moved between a lock position, to prohibit removal of the power feeding plug from the power receiving connector, and an unlock position, to permit removal of the power feeding plug from the power receiving connector. | 2011-11-17 |
20110281448 | Connector assembly for connection under voltage - A connector includes a first connection element ( | 2011-11-17 |
20110281449 | High Frequency Receptacle Connector with Plug Connector Detecting Function - A high frequency receptacle connector has an insulating housing, multiple first terminals, multiple second terminals, a shell and a plug detecting assembly. The first and second terminals are mounted on the insulating housing and capable of implementing USB3.0 protocol. The shell covers the insulating housing and terminals. The plug detecting assembly has a first detecting terminal and a second detecting terminal. The first detecting terminal is mounted on the insulating housing. The second detecting terminal is mounted on the insulating housing and selectively bends to contact or isolate from the first detecting terminal. The high frequency receptacle connector is capable of providing electric power under a power-saving mode of a PCB on which the high frequency receptacle connector is mounted. | 2011-11-17 |
20110281450 | Miniature Electrical Connectors - A miniature electrical connector comprising a floating and vertically orientable spring contact within but not physically secured to an electrically-conductive connector block of a female connector wherein the spring contact and connector block are designed such that the spring contact is vertically oriented and outwardly expanded when a male connector is inserted into the female connector to provide a conductive path between a male contact of the male connector and the connector block of the female connector. | 2011-11-17 |
20110281451 | CONNECTOR ASSEMBLIES INCLUDING MOVABLE CONNECTORS - A connector assembly including a first connector configured to be movably mounted to a support structure and having a first mating terminal. The first connector is movable with respect to the support structure in an axial direction along an alignment axis. The connector assembly also includes a second connector that is configured to be movably mounted to a support panel and has a second mating terminal. The second connector is movable with respect to the support panel in a radial direction relative to an alignment axis. The second connector shifts in the radial, direction to align the first and second mating terminals when the first and second connectors engage each other in a misaligned manner. The first connector moves between a projected position and a retracted position along the alignment axis to facilitate establishing a communication pathway between the first and second mating terminals. | 2011-11-17 |
20110281452 | LOCKING DEVICE FOR POWER FEEDING PLUG - A locking device for a power feeding plug that prevents unauthorized removal of the power feeding plug from an inlet. The locking device includes a lock mechanism that locks the power feeding plug to the inlet. The lock mechanism includes an actuator and a lock member pivotable by the actuator between a lock position, at which the lock member locks the power feeding plug to the inlet, and an unlock position. | 2011-11-17 |
20110281453 | QUICK-DETACHABLE TERMINAL SEAT AND PROGRAMMABLE LOGIC CONTROLLER HAVING THE SAME - A quick-detachable terminal seat includes a main body and a pull rod. The terminal seat is mounted in a casing of a controller which is provided with two notches and locking slots on its periphery. The pull rod has two hooks engaged with the locking slots. The pull rod is provided with two inclined surfaces at locations corresponding to the notches respectively. When the pull rod is pulled out of the main body with the hooks being disengaged from the locking slots, the two inclined surfaces are moved out of the two notches respectively, so that the terminal seat can move upwardly with respect to the casing. In this way, the terminal seat can be detached there from quickly with less labor, or it can be mounted in the casing easily without additional tools. The present invention further provides a programmable logic controller having the terminal seat. | 2011-11-17 |
20110281454 | HIGH SPEED ELECTRICAL CONTACT ASSEMBLY - A contact assembly that comprises an outer body and an insert assembly receivable in the outer body. The insert assembly includes a housing and a conductive bather received in the housing. The conductive barrier defines first and second receiving areas in the housing. At least a first contact member is receivable in the first receiving area and at least a second contact member is receivable in the second receiving area. Each of the first and second contact members is adapted to accept a conductor. | 2011-11-17 |
20110281455 | ELECTRICAL CONNECTOR ASSEMBLY WTH HIGH-DENSITY CONFIGURATION - An electrical connector assembly ( | 2011-11-17 |
20110281456 | CONTACTING PLUG AS WELL AS CONTACTING PLUG-IN CONNECTION - A contacting plug for contacting a contract carrier, in particular a circuit board, includes two clamping claws able to be swiveled relative to each other, transversely to a plug-in direction, at least one of the clamping claws being implemented as contact holder carrying at least one flexible contact element, which contact holder is designed to rest on the contact carrier with a contact force and has spring devices for generating a clamping force which is independent of the contact force. The clamping claws have at least one stop face in each case, which rest against each other in the non-contacting state of the contacting plug and thereby prevent plastic deformation of the contact element. | 2011-11-17 |
20110281457 | CONNECTOR ASSEMBLY - A connector assembly includes a resilient mounting panel and a connector. The resilient mounting panel includes a panel body and a mounting protrusion. The connector includes a connector body and a mounting portion extending from the connector body. The connector body is configured to connect to an electronic device, and the mounting portion is configured to be secured to the mounting protrusion and to space the connector from the panel body. | 2011-11-17 |
20110281458 | CABLE ASSEMBLY WITH IMPROVED TERMINATING MEANS - A cable assembly ( | 2011-11-17 |
20110281459 | TELECOMMUNICATION ASSEMBLY - The invention relates to a telecommunication assembly | 2011-11-17 |
20110281460 | Twisted Quick Connector - A twisted quick connector for connecting a spiraled armored electrical conduit or cable. (BX) to a junction box. It is applied onto the end of the spiraled armored conduit or the BX cable by twisting it clockwise by hand, thereby threading it on to the spirals. Engagement of the connector to the end of the conduit or the armored BX cable is secured, and providing grounding passage through it. | 2011-11-17 |
20110281461 | COAXIAL CONNECTOR - A coaxial connector including a first element, two metal joints, a first metal shell, a second metal shell, an elastic fixing member, and a pair of metal fixings. The first element includes a circuit substrate, a signal input terminal, a signal output terminal, and a grounding terminal and is sandwiched between the pair of the metal fixings. The elastic fixing member embraces the pair of the metal fixings. One end of each of the two metal joints contacts with the signal input terminal and the signal output terminal of the first element, respectively, and the other end thereof contacts with a signal terminal of the first metal shell and the second metal shell, respectively. The pair of the metal fixings each contacts with the inner conductor of the first metal shell and the second metal shell. The coaxial connector is applicable to different thicknesses of substrates, and is easy to assemble and disassemble. | 2011-11-17 |
20110281462 | BOARD CONNECTOR AND METHOD OF MOUNTING IT - A housing ( | 2011-11-17 |
20110281463 | USB CONNECTOR - A Universal Serial Bus (USB) connector with a connector housing is provided with at least one soldering part and at least one reinforcement part around its circumference. The USB connector includes: a connector housing; one or more soldering parts formed by cutting and unfolding predetermined areas around the circumference of the connector housing; and one or more reinforcement parts, each of which is formed by bending an end of the connector housing. The reinforcement parts being engaged with the soldering parts to support and reinforce the soldering parts, respectively. | 2011-11-17 |
20110281464 | ELECTRICAL CONNECTOR ASSEMBLY WITH AN ADDITIONAL REAR SHELL - An electrical connector assembly ( | 2011-11-17 |
20110281465 | ELECTRICAL CONNECTOR ASSEMBLY WITH AN IMPROVED SHELL - An electrical connector assembly ( | 2011-11-17 |
20110281466 | METHOD FOR PRODUCING AN ELECTRONIC OBJECT COMPRISING A DATA TRANSFER STAGE AND THE OBTAINED OBJECT - A method for producing a portable electronic object having contact pads arranged on a plane with a thickness which differs from the thickness of a standard smartcard. The object is electrically connected to data transfer station connectors, by delivering a data transfer station having an electric probe connector and submitting the object to the data transfer station in such a way that the contact pads thereof are accessible to the electric probes in a direction perpendicular to the plane. Objects obtainable include UBS keys or PCMCIA cards or readers. | 2011-11-17 |
20110281467 | ELECTRICAL CONNECTOR - An electrical connector includes an insulated seat, and first and second seats. A plurality of first and second terminals are embedded partially into the first and second seats via insert molding process in such a manner that when the first and second seats are assembled to the insulated seat, a first engagement structure of the first seat engages with a second engagement structure of the second seat while one of the two clamping structures at the insulated seat clamps an assembly of the first and second assembling structures of the first and second seats. | 2011-11-17 |
20110281468 | ELECTRICAL CONNECTOR WITH IMPROVED CONTACT STRUCTURE FOR HIGH FREQUENCY SIGNAL TRANSMISSION - An electrical connector includes an insulative housing, a first set of contacts insert-molded with the insulative housing and a second set of contacts assembled to the insulative housing. The first set of contacts includes at least one pair of differential contacts for transmitting high-speed signals. Each first contact includes a nonelastic first mating portion, a first retention portion parallel to the first mating portion, a first tail portion extending from the first retention portion and extending beyond the insulative housing, and a connecting portion connecting the first mating portion and the first retention portion with a width narrower than that of the first mating portion and the first retention portion. | 2011-11-17 |
20110281469 | CABLE ASSEMBLY WITH IMPROVED TERMINATING MEANS - A cable assembly includes an insulative housing ( | 2011-11-17 |
20110281470 | CABLE ASSEMBLY WITH IMPROVED TERMINATING MEANS - A cable assembly ( | 2011-11-17 |
20110281471 | ELECTRICAL CONNECTOR - An electrical connector includes an insulative housing having a base portion extending along a front-to-rear direction and a strengthening rib protruding outwardly from an outer circumstance of a front end of the base portion. At least one receiving recess is defined on the strengthening rib and opened upwardly via an opening defined on an upper face of the strengthening rib. A plurality of contacts are secured in the insulative housing. A metallic shell surrounds the base portion and includes at least one retaining plate received in the receiving recess. A transverse width of the receiving recess becomes narrower and narrower in a vertical direction perpendicular to the front-to-rear direction so as to keep the retaining plate being secured. | 2011-11-17 |
20110281472 | CONNECTOR - Each of contact fittings is obtained by bending a die-cut member having a metal plate portion of substantially rectangular shape and a metal piece connecting to a long side of the metal plate portion. The metal piece is folded to be accommodated within a region directly above a surface of the metal plate portion opposite a surface in contact with a front-surface electrode or a back-surface electrode. Then, the metal piece is bent along the length of the metal plate portion to form a hook to be retained by a first housing or a second housing. Therefore, as compared to a structure in which hooks are orthogonal to the length of metal plate portions and bend outward from contact fittings, the arrangement width of the contact fittings arranged in a direction substantially orthogonal to the length of the contact fittings can be reduced. | 2011-11-17 |
20110281473 | UNIVERSAL SERIAL BUS INTERFACE - A universal serial bus (USB) interface includes a positive differential signal pin including first and second sections, a button mounted to the USB interface, and an elastic piece. The button includes a driving rod with a distal end resisting against the second section, a receiving room is defined below the second section to receive the elastic piece, so the second section is clamped between the elastic piece and the driving rod and is electrically connected to the first section. When the button is pressed, the driving rod of the button causes the second section to deform the elastic piece, so the second section moves away from the first section. When the button is released, the elastic piece is restored to return the first section to the second section, so the first and second sections are electrically connected again. | 2011-11-17 |
20110281474 | TELECOMMUNICATIONS JACK WITH A MULTILAYER PCB - A telecommunications jack | 2011-11-17 |
20110281475 | SPRING CONTACT FOR CONDUCTING ELECTRICITY - The present invention provides a spring contact for conducting electricity, Among two side edges for conducting electricity at a cross section of each ring of the spring contact, wherein
| 2011-11-17 |
20110281476 | ELECTRICAL CONTACTS USING CANTED COIL SPRINGS AND STAMPED HOUSINGS AND METHODS THEREOF - An electrical contact assembly made from a stamped housing, having a first end with a spring groove housing formed over a canted coil spring in order to provide spring retention to a pin or post inserted into the housing. On the other end of the stamped housing, a wire/cable crimp assembly is formed. The spring, groove housing may be formed having an opening for insertion of the pin or post that is either substantially parallel or perpendicular to the base of the housing. | 2011-11-17 |
20110281477 | OUTBOARD MOTOR AND MARINE VESSEL INCLUDING THE SAME - An outboard motor includes an outboard motor main body, an attachment mechanism, a pivoting mechanism, an angle detecting device, a rotation speed detecting device, and a controller. The pivoting mechanism includes a first cylinder arranged to support and pivot the outboard motor main body about a horizontal shaft from a first angle to a second angle greater than the first angle. An angle detection value and a speed detection value are input into the controller. The controller is arranged to execute a speed reduction control to control the engine so as to reduce the engine speed. The controller is arranged not to execute the speed reduction control when the angle detection value is a value corresponding to the inclination angle less than the first angle or a value corresponding to the inclination angle greater than the second angle. | 2011-11-17 |
20110281478 | SYSTEMS, DEVICES AND METHODS FOR PROVIDING ENERGY FOR SHIP PROPULSION - The present invention allows for the replacement of polluting and inefficient diesel-based marine propulsion systems. A natural-gas burning power plant in combination and at least one renewable energy source are combined to drive a ship's propulsion during times when the power plants are not in use for other activities including desalination and oil exploration. Renewable energies are used judiciously to reduce fossil fuel requirements but the present invention does not fully rely on renewable energy, which is not always available. | 2011-11-17 |
20110281479 | FLEXIBLE IMPACT BLADE WITH DRIVE DEVICE FOR A FLEXIBLE IMPACT BLADE - A watercraft having a plurality of flexible section secured to a mount, having a drive assembly, wherein the water craft can move the flexible section upwardly and downwardly to propel the watercraft through the water. | 2011-11-17 |
20110281480 | CONNECTING PIECE THAT CAN BE INSERTED INTO A BOATS HULL - A connecting piece ( | 2011-11-17 |
20110281481 | COMPOSITE MATERIAL - A composite material includes a layer of fibres conjoined to a matrix, wherein one of the matrix and fibres has a first component which exhibits auxetic behaviour for loading along a first direction, and the other of the matrix and fibres has a second component which exhibits non-auxetic behaviour for loading along the first direction. | 2011-11-17 |
20110281482 | NOVEL LOWER COST REUSABLE POLYMER BINDER - Exemplary embodiments provide compositions for erasable media and methods of forming polymers for erasable media. The method can include providing a first monomer, the first monomer including one or more alkoxylated bisphenols and adding at least one second monomer and a catalyst to the first monomer to form a mixture at a first temperature, the second monomer selected from the group consisting of an organic diacid, a dialkyl ester of the organic diacid, and combinations thereof. The method can also include melt condensing the mixture by increasing the temperature from the first temperature to a second temperature over a first amount of time to form one or more polymers, wherein the one or more polymers has an acid value in the range of about 0.1 mg-KOH to about 12 mg-KOH. | 2011-11-17 |
20110281483 | Waterproofing Compound and Waterproofing-Processing Method for Waterproofing a Wide Variety of Natual and Synthetic Fabrics and Materials - Embodiments of the present invention employ the perfluoroalkyl acrylic copolymerisate PD-1, produced by the Clariant Corporation, and certain other similar perfluoroalkyl acrylic copolymerisates, for waterproofing a wide variety of natural and synthetic fabrics and materials. In one embodiment of the present invention, fabrics and materials are passed through a bath of PD-1, or certain other perfluoroalkyl acrylic copolymerisates, and the material or fabric is then cured for a period of time within a range of periods of time specific to the type of material or fabric at a temperature within a range of temperatures specific to the type of material or fabric in order to create a remarkably waterproof, but breathable material or fabric with characteristics and properties identical or similar to those of the untreated fabric. Thus, embodiments of the present invention provide for remarkable degrees of waterproofing of natural and synthetic fabrics, while retaining the breathability characteristics of the natural and synthetic fabrics and materials as well as many other characteristics and properties, including texture, thickness, weight, and other characteristics and properties desirable to users of the materials and fabrics as well as products constructed from the materials and fabrics. | 2011-11-17 |
20110281484 | Nonflammable Transparent Fiber-Reinforced Resin Sheet and Process for Production of the Same - A fiber-reinforced resin sheet comprising a glass fiber woven fabric impregnated with a resin composition containing vinyl chloride-based resin, wherein the glass fiber woven fabric content is 10-50 wt % with respect to the total weight of the fiber-reinforced resin sheet, the glass composing the glass fiber woven fabric comprises SiO | 2011-11-17 |
20110281485 | PHASE CHANGE MATERIAL COMPOSITIONS - A phase change material (PCM) composition comprises a blend of at least one fatty acid ester and at least one ethylene copolymer, wherein the ethylene copolymer comprises at least 28% of an at least one polar comonomer by weight, based on the weight of the ethylene copolymer. A film or sheet comprises or is produced from the PCM composition and the film or sheet can be a single layer or multilayer structure. | 2011-11-17 |
20110281486 | RECYCLABLE, MULTI-LAYER PACKAGING MATERIAL CAPABLE OF WATER ABSORPTION AND DESORPTION - A composite sheet material suitable for use as a wrapping material having a layer of non-woven material formed from thermoplastic fibers or spunbonded fabric and a single or a composite water impermeable layer, the layers being laminated together. The composite impermeable layer may include a polymeric woven scrim for increasing the tensile strength and tear strength of the sheet. | 2011-11-17 |
20110281487 | GAS BARRIER MOLDED ARTICLE AND METHOD FOR PRODUCING THE SAME - The present invention provides the gas barrier molded article having high permeation barrier properties against oxygen gas, water vapor and the like. A gas barrier material containing cellulose fibers having an average fiber diameter of not more than 200 nm wherein the content of carboxyl group in a cellulose ranges from 0.1 to 2 mmol/g; and further a cross-linking agent having a reactive functional group or the cellulose fibers being dried or heated or a gas barrier molded article containing a molded substrate and a layer composed of the gas barrier material on the surface of the molded substrate. | 2011-11-17 |
20110281488 | ENERGY-HARVESTING ARTICLE - An energy-harvesting article includes two textile units each having a thin metal sheet and a leather sheet, a first adhesive layer interconnecting the thin metal sheets of the textile units, and two second adhesive layers each interconnecting the thin metal sheet and the leather sheet of a respective textile unit. The leather sheet covers the thin metal sheet, and includes a non-woven fabric substrate and a leather coating layer. Each of the non-woven fabric substrate and the leather coating layer includes a catalytic composition. By wrapping the energy-harvesting article to pipes, the material of the energy-harvesting article is considered as self-assembled monolayers, and the energy-harvesting article is harvesting energy from the environment and resonant tunneling through inner portions of the pipes to activate flowing medium inside the pipes, thereby improving energy efficiency and achieving energy conservation and reduction of greenhouse gas emission. | 2011-11-17 |
20110281489 | METHOD OF REPAIRING SHORT OR POTENTIAL SHORT CIRCUITS DURING RESIZING OF AN ELECTRONIC FLAT PANEL DISPLAY - Electronic flat panel displays (FPDs) including liquid crystal displays (LCDs) may be resized to meet custom size requirements for applications in aerospace and elsewhere. During the resizing process, pixel line defects may occur in the image due to electrical short circuits at the resized cut edge. Methods for repairing such short circuits are described, including use of mechanical, electrical, chemical, thermal, and/or other means, and any combination thereof, to open the short circuits. The method may be applied to the sealed cut edge to ruggedize the seal, even if image defects are not exhibited initially. The repaired short circuits may be stress tested to ensure the defects will not recur during the life of the display, and the repaired areas may be resealed. | 2011-11-17 |
20110281490 | LAMP AND METHOD OF MANUFACTURING SAME - A lamp including a plurality of light emitting devices and heat sinks can be configured to dissipate heat generated by the plurality of light emitting devices. The heat sinks can be branched into a generally Y-shaped configuration as viewed in a section that includes a primary optical axis of the vehicle lamp. One of the light emitting devices is connected to one of the branched parts of the heat sinks. Another light emitting device is connected to the other branched part of the heat sinks. | 2011-11-17 |
20110281491 | METHOD OF MANUFACTURING DISPLAY DEVICE AND DISPLAY DEVICE - A method of manufacturing a display device includes the steps of: forming a positive type photoresist above a surface of a first transparent substrate having a transistor formed on the surface thereof so as to cover the transistor; radiating a light from a back surface side of the first transparent substrate to the first transparent substrate having the positive type photoresist formed thereabove, for exposing the positive type photoresist; developing the positive type photoresist thus exposed to selectively leave the positive type photoresist located above the transistor, for forming a spacer; and laminating a second transparent substrate above the surface of the first transparent substrate through the spacer. | 2011-11-17 |
20110281492 | Method of Sensing the Proximity of a Human - A toy including at least one capacitive sensor comprising a metal plate constituting one of the two plates of a capacitor, the second plate being constituted by a portion of a living being in the proximity of the toy, at least one effects generator; and a control circuit including means for causing effects to take place in response to stimulation of said capacitive sensor; the toy being characterized in that said metal plate of said at least one capacitive sensor is used as an antenna for picking up radio frequency transmission from said portion of a living being in the proximity of the toy. | 2011-11-17 |
20110281493 | ELECTRONIC WILDLIFE CALL - An electronic wildlife call has a housing and electronics. The housing has a main body and a pistol type handle extending from the main body. The electronics includes memory with a library of electronic sound calls, a sound generator, a speaker and a user interface. The user interface is at a rear end of the main body and the speaker is at a front end. A pistol-style trigger adjacent the handle sounds the selected call when pulled. The calls are stored according to animal type, with each animal having plural calls. A user can scroll through the calls by animal type. The main body has front and rear portions that are rotatably coupled together. An electrical coupling between the two portions has concentric rings in one portion and pins in the other portion, which pins are in contact with the rings. | 2011-11-17 |
20110281494 | Wall racer toy vehicles - A motorized toy vehicle or Wall Racer that is capable of operating on vertical and inverted horizontal surfaces such as walls and ceilings, while being manufacturable at reasonable cost and operable on batteries having sufficient lifetime as to be enjoyable. One or more battery-powered fans draw air from around all or defined portions of the periphery of the chassis of the Wall Racer through a carefully-shaped duct, so that the air in the portion of the duct immediately adjacent the surface flows at high velocity and low pressure; the relatively greater pressure of the surrounding air urges the vehicle against the surface, allowing it to operate on vertical surfaces, such as walls, or inverted on horizontal surfaces, such as ceilings. | 2011-11-17 |
20110281495 | CARDBOARD PLAY STRUCTURE - A foldable cardboard play structure is provided that comprises at least a first and second foldable cardboard panel, wherein at least the first foldable panel includes one or more first tabs, each of the one or more first tabs corresponding to a slot located on at least the second foldable panel. The slots are adapted to receive the corresponding first tab and at least one of the first and second foldable panels include one or more edge portions having at least one fold line and a second tab thereon. The edge portions are configured to wrap around exposed rough edges of the other of the first and second foldable panel. | 2011-11-17 |
20110281496 | POP-OUT PLAY STRUCTURE - A life-size pop-out play structure is provided that includes a first foldable cardboard panel, a second foldable cardboard panel hingedly bound to the first panel along a first edge and one or more pop-out portions attached to the first and second cardboard panels. The portions are configured to lie flat against at least one of the first and second panels when the first and second panels are in a closed position and the pop-out portions are configured to pop-out when the first and second panels are separated by an angle. | 2011-11-17 |
20110281497 | GARMENT FOR WEARING A BREAST PROSTHESIS - The invention relates to a garment for wearing breast prosthesis comprising a torso front panel forming a front side of the garment; a torso back panel forming a back side of the garment; and at least a first pocket for receiving the prosthesis; the front panel and the back panel being connected at several locations forming: a right arm opening at a first side having a right arm rim around the right arm opening; a left arm opening at a first side having a left arm rim around the left arm opening; a neck opening at the top having a neck rim around the neck opening; the first pocket being located at a first half of the front panel being connected to the front panel at or near at least a substantial part of an arm rim and to at least or near a substantial part of the neck rim. | 2011-11-17 |
20110281498 | BRASSIERES - An improved brassiere is disclosed. The brassiere comprises two bra cups, chest bands, an upper side wing and a down side wing, each of the bra cups including an internal layer, an external layer and an elastic layer located between the internal layer and the external layer. An arc-shaped wire steel is embedded in the elastic layer of each of the bra cups. The wire steel will not apply a pressure onto the wearer's breast directly because of the buffering of the elastic layer, thus the blood circulation in the breast will not be impaired. The risk of suffering from breast-related diseases is thus reduced. Preferably, the chest bands of the brassiere are consisted only of the internal layer and the external layer without the elastic layer, leading to a longer service life of the brassiere. | 2011-11-17 |
20110281499 | ULTRASONIC CUT AND BONDED ELASTIC MATERIAL - A method of forming a hem of an elastic material includes laying a first stretch fabric sheet upon a second stretch fabric sheet, cutting an excess edge strip from the first stretch fabric sheet and the second stretch fabric sheet along a fuse line and simultaneously fusing the sheets together along the fuse line, positioning an elastic strip between the first and second sheets along the fuse line, and fusing the elastic strip to one of the sheets to form a hem. | 2011-11-17 |
20110281500 | Modified Body Shaper With No Leak Liner(s) - The no leak liner(s) will prevent body fluids from staining and ruining the outer garment. The liner may also absorb excess fluids from the body to prevent embarrassing moments. Anyone who sweat in the underarm area, have urine/anal malfunctions, or menstruation, may greatly benefit from this invention. The “bra strap cover” improves the current body shaping invention. Straps were conventional made to hold garments in place; the “bra strap cover” purpose is to hide the bra straps and lift, support and reshape the breast. This will make it possible to wear any color bra with an outer garment while keeping the body shaper in place. Keeping the body shaper in place will allow it to meet its intended purpose of sliming, shaping, and smoothing the body. | 2011-11-17 |
20110281501 | FEEDBACK FOR POLISHING RATE CORRECTION IN CHEMICAL MECHANICAL POLISHING - A substrate having a plurality of zones is polished and spectra are measured. For each zone, a first linear function fits a sequence of index values associated with reference spectra that best match the measured spectra. A projected time at which a reference zone will reach the target index value is determined based on the first linear function, and for at least one adjustable zone, a polishing parameter adjustment is calculated such that the adjustable zone has closer to the target index at the projected time than without such adjustment. The adjustment is calculated based on a feedback error calculated for a previous substrate. The feedback error for a subsequent substrate is calculated based on a second linear function that fits a sequence of index values associated with reference spectra that best match spectra measured after the polishing parameter is adjusted. | 2011-11-17 |
20110281502 | SYSTEM AND METHOD PRE-BLOCKING OPHTHALMIC LENS FOR PROCESSING INCLUDING ARTICULATION EDGING - A method and system for pre-blocking ophthalmic lenses for processing including articulation edging is described. Lens blanks are blocked in this method without prior knowledge of lens prescription variables or frame size and shape dimensions. This blocking can be done at a remote mass production manufacturing facility. The pre-blocked lenses would then be inventoried at the lens manufacturing location. No de-blocking and re-blocking is required between the surfacing, for those lens blanks requiring surfacing, and edging processes so the lens blanks remain on their blocks from start to finish. If surfacing is required, both surfacing and edging are performed on the same machine with no interruptions between the two processes. Machine readable indicia on the Lens-Block Assemblies for Lens Blank species identification is described. Pre-blocking of finished uncut lenses for edging using articulation edging is also described. | 2011-11-17 |