46th week of 2015 patent applcation highlights part 59 |
Patent application number | Title | Published |
20150325723 | POLYCRYSTALLINE PHOTODETECTORS AND METHODS OF USE AND MANUFACTURE - Method and apparatus for semiconductor devices are presented. The method may be performed by applying a layer of polycrystalline material to a surface of a substrate. The polycrystalline layer may be a lead salt semiconductor material. The method is further performed by applying junctions and two or more spaced apart electrical contacts to the polycrystalline material to create a photovoltaic device in which changes in light interacting with the polycrystalline material causes changes in voltage at the junctions thereby enabling photodetection. | 2015-11-12 |
20150325724 | METHOD OF PREPARING METAL NANOPARTICLES FOR SOLAR CELL, INK COMPOSITION INCLUDING THE METAL NANOPARTICLES, AND METHOD OF PREPARING THIN FILM USING THE SAME - Disclosed are a method of preparing metal nanoparticles for solar cells, an ink composition including the metal nanoparticles, and a method of preparing a thin film using the same. More particularly, there are provided a method of preparing metal nanoparticles for forming a light absorption layer of a solar cell, including preparing a first solution including a reducing agent, preparing a second solution including at least two salts selected from the group consisting of a copper (Cu) salt, a zinc (Zn) salt, and a tin (Sn) salt, preparing a mixture by mixing the first solution and the second solution, and synthesizing at least one kind of metal nanoparticles by reaction of the mixture and purifying the synthesized metal nanoparticles, an ink composition including the metal nanoparticles, and a method of preparing a thin film using the same. | 2015-11-12 |
20150325725 | GLASS SUBSTRATE FOR SOLAR CELL - Provided is a glass substrate for a solar cell, including as a glass composition, in terms of mass %, 40 to 70% of SiO | 2015-11-12 |
20150325726 | ARRAY-TYPE LIGHT-RECEIVING DEVICE - An array-type light-receiving device includes a semiconductor substrate having a cleavage direction; a light-receiving surface disposed on the semiconductor substrate; and a plurality of pixels two-dimensionally arranged on the light-receiving surface in a first array direction and a second array direction, each of the pixels including a staked semiconductor layer including an optical absorption layer. The first and second array directions are tilted relative to the cleavage direction of the semiconductor substrate at a predetermined angle α, as viewed from above the light-receiving surface. In addition, the first and second array directions and the cleavage direction extend along the light-receiving surface. | 2015-11-12 |
20150325727 | MULTIPLE SOLAR CELL AND METHOD FOR MANUFACTURING THE SAME - A multi-junction solar cell having a Ge or GaAs substrate, as well as a solar cell structure having several subcells deposited on the substrate, the substrate having peripheral side faces, and the solar cell structure having a peripheral circumferential surface, which runs spaced apart from the side faces. To prevent oxidation and penetration of moisture, the circumferential surface of the solar cell structure is coated with a protective, electrically insulating first coating under essential exclusion of the upper surface facing the rays, or that without encroaching on the solar cell structure, the side faces of the substrate are coated with a protective, electrically insulating second coating or that both the side faces of the substrate as well as the circumferential surface of the solar cell structure are coated with a third coating by essential exclusion of the upper surface facing the rays. | 2015-11-12 |
20150325728 | SYSTEMS AND METHODS FOR IMPROVED PHOTOVOLTAIC MODULE STRUCTURE AND ENCAPSULATION - A system and method for improved photovoltaic module structure and encapsulation is described. One embodiment includes a photovoltaic module comprising a front substrate, a photovoltaic structure attached to the front substrate, wherein the photovoltaic structure comprises at least one photovoltaic cell, and a membrane, wherein the membrane and the front substrate substantially encapsulate the photovoltaic structure. | 2015-11-12 |
20150325729 | ENCAPSULANT COMPOSITION COMPRISING A COPOLYMER OF ETHYLENE, VINYL ACETATE AND A THIRD COMONOMER - Provided herein is an encapsulant composition. The encapsulant composition, which is useful in photovoltaic modules, comprises a copolymer of ethylene, vinyl acetate and a third comonomer. Preferred third comonomers include methacrylic acid, carbon monoxide, acrylic acid, maleic anhydride mono-methyl ester (MAME), and maleic anhydride. Further provided herein is a photovoltaic module comprising the encapsulant composition. The photovoltaic module is less susceptible to potential-induced degradation than are photovoltaic modules that use conventional encapsulants that are primarily copolymers of ethylene and vinyl acetate. | 2015-11-12 |
20150325730 | INTEGRATED THIN FILM SOLAR CELL INTERCONNECTION - Photovoltaic modules may include multiple flexible thin film photovoltaic cells electrically connected in series, and laminated to a substantially transparent top sheet having a conductive grid pattern facing the cells. Methods of manufacturing photovoltaic modules including integrated multi-cell interconnections are 5 provided. Methods may include steps of coordinating, integrating, and registering multiple rolls of substrates in continuous processes. | 2015-11-12 |
20150325731 | BI-COMPONENT ELECTRICAL CONNECTOR - The invention relates to a photovoltaic article comprising a plurality of photovoltaic cells having first ( | 2015-11-12 |
20150325732 | SOLAR COLLECTOR - The present invention relates to a solar collector or a light collector by means of which light, generally sunlight, can be directed onto an energy conversion unit. In particular, it relates to a light collector ( | 2015-11-12 |
20150325733 | GRID DESIGN FOR III-V COMPOUND SEMICONDUCTOR CELL - A photovoltaic solar cell for producing energy from the sun including a germanium substrate including a first photoactive junction and forming a bottom solar subcell; a gallium arsenide middle cell disposed on said substrate; an indium gallium phosphide top cell disposed over the middle cell; and a surface grid including a plurality of spaced apart grid lines, wherein the grid lines have a thickness greater than 7 microns, and each grid line has a cross-section in the shape of a trapezoid with a cross-sectional area between 45 and 55 square microns. | 2015-11-12 |
20150325734 | PHOTOVOLTAIC SYSTEMS WITH INTERMITTENT AND CONTINUOUS RECYCLING OF LIGHT - The one or more embodiments of the present invention propose a novel photovoltaic system. The system can include a housing and at least one layer of photovoltaic panels inside the housing. Photovoltaic cells can be arranged on the panel. Light is reflected in many ways and recycled within the housing either continuously or intermittently. This can reduce the loss of light energy back into the atmosphere due to reflections from the panel and can also improve the working efficiency of the photovoltaic cells by creating multiple passes for the light either continuously or intermittently. | 2015-11-12 |
20150325735 | PHOTOVOLTAIC DEVICE WITH A ZINC MAGNESIUM OXIDE WINDOW LAYER - Methods and devices are described for a photovoltaic device and substrate structure. In one embodiment, a photovoltaic device includes a substrate structure and a CdTe absorber layer, the substrate structure including a Zn | 2015-11-12 |
20150325736 | GERMAINIUM PIN PHOTODIODE FOR INTEGRATION INTO A CMOS OR BICMOS TECHNOLOGY - A diode comprising a light-sensitive germanium region which is totally embedded in silicon and forms with the silicon a lower interface and lateral interfaces, wherein the lateral interfaces do not extend perpendicularly, but obliquely to the lower interface and therefore produce a faceted form. | 2015-11-12 |
20150325737 | GEIGER-MODE AVALANCHE PHOTODIODE WITH HIGH SIGNAL-TO-NOISE RATIO, AND CORRESPONDING MANUFACTURING PROCESS - An embodiment of a geiger-mode avalanche photodiode includes: a body of semiconductor material, having a first surface and a second surface; a cathode region of a first type of conductivity, which extends within the body; and an anode region of a second type of conductivity, which extends within the cathode region and faces the first surface, the anode and cathode regions defining a junction. The anode region includes at least two subregions, which extend at a distance apart within the cathode region starting from the first surface, and delimit at least one gap housing a portion of the cathode region, the maximum width of the gap and the levels of doping of the two subregions and of the cathode region being such that, by biasing the junction at a breakdown voltage, a first depleted region occupies completely the portion of the cathode region within the gap. | 2015-11-12 |
20150325738 | Solar Photovoltaic Module Clamping System - A clamping system for securing the corners of four photovoltaic modules to a carport purlin, the clamping system having upper and lower body portions with a size adjustable gap to receive the purlin therein, and a pair of rotating connectors at opposite ends of the clamp assembly, each rotating connector having arms extending from opposite sides, the arms being rotated to lock into side grooves in the photovoltaic modules. | 2015-11-12 |
20150325739 | SELECTIVE SELF-ALIGNED PLATING OF HETEROJUNCTION SOLAR CELLS - A method for forming contacts on a photovoltaic device includes forming a heterojunction cell including a substrate, a passivation layer and a doped layer and forming a transparent conductor on the cell. A patterned barrier layer is formed on the transparent conductor and has openings therein wherein the transparent conductor is exposed through the openings in the barrier layer. A conductive contact is grown through the openings in the patterned barrier layer by a selective plating process. | 2015-11-12 |
20150325740 | LED UNIT AND MANUFACTURING METHOD THEREOF - An LED unit according to the invention has a resin housing which is detachably assembled to a vehicle lamp, a lead frame which has a terminal portion which is connected to an exterior terminal, an LED mounting portion and a control part mounting portion and lead frame which is provided integrally on the housing, an LED which is mounted on the LED mounting portion, and a control part which is mounted on the control part mounting portion for controlling the illumination of the LED. The lead frame has a support resin which is a resin material which holds the LED mounting portion in such a way as to surround the LED mounting portion. The lead frame is bent to a back side of the LED at areas outside the support resin, and the control part mounting portion and the terminal portion are formed respectively by the bent portions. | 2015-11-12 |
20150325741 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device is provided with a substrate having depression and projection, a base layer, and a structure of a stack of layers of nitride semiconductor at least having a light emitting layer sequentially. A cavity is provided in the base layer over a projection included in the depression and projection. | 2015-11-12 |
20150325742 | METHOD OF FABRICATING SEMICONDUCTOR DEVICES - Vertical high power LEDs are the technological choice for the application of general lighting due to their advantages of high efficiency and capability of handling high power. However, the technologies of vertical LED fabrication reported so far involve the wafer-level metal substrate substitution which may cause large stress due to the mismatch between metal substrate and LED layer. Moreover, the metal substrate has to be diced to separate LED dies which may cause metal contamination and thus increase the leakage current. These factors will lower the yield of LED production and increase the cost as well. The present invention is to disclose a novel method for the fabrication of GaN vertical high power LEDs and/or a novel method for the fabrication of GaN vertical high power LEDs which is compatible to mass production conditions. The novelty of the invention is that the island metal plating is conducted with the help of pattern formation techniques. Due to the small area of the islands, the stress generated between LED layer and metal islands is much less significant. Furthermore, due to the island metal plating and through the application of temporary supporting carriers the LED dies will be separated at the end of the fabrication process automatically or simply by applying slight mechanical stress or stretching the adhesive tape. This advantage avoids the metal dicing step and reduces the possibility of metal contamination and leakage current generation. Therefore, high yield and low cost will be realized using this novel method in LED production. | 2015-11-12 |
20150325743 | HIGH EFFICIENCY BROADBAND SEMICONDUCTOR NANOWIRE DEVICES - Amongst the candidates for very high efficiency electronics, solid state light sources, photovoltaics, and photoelectrochemical devices, and photobiological devices are those based upon metal-nitride nanowires. Enhanced nanowire performance typically require heterostructures, quantum dots, etc which requirement that these structures are grown with relatively few defects and in a controllable reproducible manner. Additionally flexibility according to the device design requires that the nanowire at the substrate may be either InN or GaN. Methods of growing relatively defect free nanowires and associated structures for group IIIA-nitrides are presented without the requirement for foreign metal catalysts, overcoming the non-uniform growth of prior art techniques and allowing self-organizing quantum dot, quantum well and quantum dot-in-a-dot structures to be formed. Such metal-nitride nanowires and quantum structure embedded nanowires support a variety of devices including but not limited to very high efficiency electronics, solid state light sources, photovoltaics, and photoelectrochemical devices, and photobiological devices. | 2015-11-12 |
20150325744 | METHOD OF MANUFACTURING OPTOELECTRONIC ELEMENT HAVING ROUGH SURFACE - A method of forming a rough surface includes: providing an article having a top surface, forming a plurality of agglomerated grains on the top surface by a deposition process, and patterning the top surface to form a rough surface by using the plurality of agglomerated grains as a mask. | 2015-11-12 |
20150325745 | THREE-DIMENSIONAL LIGHT-EMITTING DEVICE AND FABRICATION METHOD THEREOF - A three-dimensional (3D) light-emitting device may include a plurality of 3D light-emitting structures formed apart from one another, each 3D light-emitting structure including: a semiconductor core vertically grown on one surface and doped in a first conductive type; an active layer formed so as to surround a surface of the semiconductor core; and a first semiconductor layer formed so as to surround a surface of the active layer and doped in a second conductive type. The 3D light-emitting device may include: a first porous insulating layer formed between lower corner portions of the 3D light-emitting structures so as to expose upper end portions of the 3D light-emitting structures; a first electrode electrically connected to the first semiconductor layer; and a second electrode electrically connected to the semiconductor core. | 2015-11-12 |
20150325746 | METHODS AND APPARATUS FOR IMPROVING MICRO-LED DEVICES - A μLED device comprising: a substrate and an epitaxial layer grown on the substrate and comprising a semiconductor material, wherein at least a portion of the substrate and the epitaxial layer define a mesa; an active layer within the mesa and configured, on application of an electrical current, to generate light for emission through a light emitting surface of the substrate opposite the mesa, wherein the crystal lattice structure of the substrate and the epitaxial layer is arranged such that a c-plane of the crystal lattice structure is misaligned with respect to the light emitting surface. | 2015-11-12 |
20150325747 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - According to one embodiment, a semiconductor light emitting element includes a stacked body, a first electrode, a second electrode and a first layer. The stacked body includes a first semiconductor layer, a second semiconductor layer and a light emitting layer. The first semiconductor layer has a first conductivity type. The second semiconductor layer has a second conductivity type. The light emitting layer is provided between the first semiconductor layer and the second semiconductor layer. The first electrode is connected to the first semiconductor layer. The first electrode includes a line-shaped portion and a bent portion. The line-shaped portion is linked to the bent portion. The second electrode is connected to the second semiconductor layer. The first layer is provided between part of the first semiconductor layer and the bent portion of the first electrode. | 2015-11-12 |
20150325748 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting unit, a light transmissive layer and an encapsulant. The light emitting unit includes a substrate, an epitaxial structure layer disposed on the substrate, and a first electrode and a second electrode disposed on the same side of the epitaxial structure layer, respectively. The light emitting unit is disposed on the light transmissive layer and at least a part of the first electrode and a part of the second electrode are exposed by the light transmissive layer. The encapsulant encapsulates the light emitting unit and at least exposes a part of the first electrode and a part of the second electrode. Each of the first electrode and the second electrode extends outward from the epitaxial structure layer, and covers at least a part of an upper surface of the encapsulant, respectively. | 2015-11-12 |
20150325749 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting element, includes: a laminated structure body including an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer; a p-side electrode provided in contact with the p-type semiconductor layer; an n-side electrode provided in contact with the n-type semiconductor layer; a highly reflective insulating layer provided in contact with the n-type semiconductor layer and having a higher reflectance than a reflectance of the n-side electrode; and an upper metal layer provided on at least a part of the n-side electrode and on at least a part of the highly reflective insulating layer and electrically connected to the n-side electrode. An area of a region of the n-side electrode in contact with the n-type semiconductor layer is smaller than an area of a region of the highly reflective insulating layer sandwiched between the n-type semiconductor layer and the upper metal layer. | 2015-11-12 |
20150325750 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor light-emitting device is provided. The semiconductor light-emitting device may include a light-emitting structure, an electrode, an ohmic layer, an electrode layer, an adhesion layer, and a channel layer. The light-emitting structure may include a compound semiconductor layer. The electrode may be disposed on the light-emitting structure. The ohmic layer may be disposed under the light-emitting structure. The electrode layer may include a reflective metal under the ohmic layer. The adhesion layer may be disposed under the electrode layer. The channel layer may be disposed along a bottom edge of the light-emitting structure. | 2015-11-12 |
20150325751 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes a first conductive type semiconductor layer, a light emitting layer, and a second conductive type semiconductor layer disposed in this order. The semiconductor light emitting element includes first and second electrodes, a first insulating film and a translucent electrode. The first electrode is provided on the first conductive type semiconductor layer and includes a first pad portion and a first extending portion. The first insulating film covers the first extending portion. The translucent electrode is connected to an upper surface of the second conductive type semiconductor layer and extends over the first insulating film. The second electrode is connected to the translucent electrode at a position on the first insulating film. The second electrode includes a second pad portion and a second extending portion extending along the first extending portion so as to be superimposed over the first extending portion. | 2015-11-12 |
20150325752 | LIGHT EMITTING DEVICE HAVING WIDE BEAM ANGLE AND METHOD OF FABRICATING THE SAME - A light emitting device having a wide beam angle and a method of fabricating the same. The light emitting device includes a light emitting structure, a substrate disposed on the light emitting structure, and an anti-reflection layer covering side surfaces of the light emitting structure and the substrate, and at least a portion of an upper surface of the substrate is exposed. | 2015-11-12 |
20150325753 | METHOD FOR MANUFACTURING LED DIE - A method for manufacturing an LED die includes following steps: a semi-finished LED die is provided; an N-type layer, an active layer, and an P-type layer are sequentially formed on the transparent substrate; the transparent substrate is etched by laser to form a light outputting surface, the light outputting surface having a smoothly concave and arc-shaped configuration; common parts of the active layer and the P-type layer are removed to expose a part of the N-type layer; and an electrode structure is disposed on exposed N-type layer and the p-type layer to complete the formation of the LED die. | 2015-11-12 |
20150325754 | HIGH-POWER WHITE LEDS - A light emitting apparatus includes a first radiation source without a dome, a substantially transparent and light transmissive optic device, a lens, a down conversion material, and a heat sink. The optic device is devoid of scattering particles and phosphor, and includes a planar top surface distal the first radiation source, a bottom surface proximal the first radiation sources, and a transparent sidewall extending between the top surface and the bottom surface. The down conversion material includes a flat layer including phosphor that is disposed on the planar top surface of the optic device between the lens and the radiation source. The heat sink, upon which the radiation source is mounted, has a recess formed therein in which an air space is defined between a boundary of the recess and the optic device. | 2015-11-12 |
20150325755 | TECHNIQUES FOR ADHERING SURFACE MOUNT DEVICES TO A FLEXIBLE SUBSTRATE - Techniques are disclosed for attaching SMDs to a flexible substrate using conductive epoxy bond pads. Each bond pad includes a set of elongated strips of conductive epoxy that are applied and cured onto the flexible substrate in an adjacent and parallel fashion. The bond pads are used to attach SMDs to the flexible substrate and also provide the conductive contacts for a printed circuit. A circuit may be printed on the flexible substrate using conductive ink that partially covers the bond pads, leaving a portion of the pads exposed. A second layer or strip of conductive epoxy may be applied over and across the exposed portions of the bond pad strips in order to attach an SMD. The number, size, and orientation of the epoxy bond pad strips may be determined by the amount of bending the flexible substrate is expected to withstand and/or the orientation of the bend. | 2015-11-12 |
20150325756 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE - A light emitting device includes a flip-chip mounted type light emitting element, a phosphor-containing member, and a first reflecting member. The flip-chip mounted type light emitting element has a pair of electrodes disposed on a bottom surface side. The phosphor-containing member is provided at least above the light emitting element and separated from the light emitting element. The first reflecting member is configured to cover the phosphor-containing member. An opening is in at least one of side faces of the light emitting device, the opening extracting light emitted from the light emitting element and light whose wavelength is converted by the phosphor-containing member. | 2015-11-12 |
20150325757 | LIGHTING DEVICE - A lighting may include a substrate, a light emitting device disposed on the substrate, a wavelength conversion layer which is disposed on the light emitting device and converts a part of first light emitted from the light emitting device into second light having a wavelength different from that of the first light, and a resin which is disposed on the substrate and buries the light emitting device and at least a portion of the wavelength conversion layer. An area of the top surface of the wavelength conversion layer is greater than that of the bottom surface of the wavelength conversion layer. The side surface of the wavelength conversion layer is inclined at a predetermined angle with respect to the top surface or the bottom surface. | 2015-11-12 |
20150325758 | LIGHT EMITTING DIODE PACKAGE STRUCTURE - A LED package structure including a carrier substrate, a flip-chip LED and a molding compound is provided. The carrier substrate includes a main body and a patterned conductive layer embedded in the main body. The main body is composed of polymer material. The main body has a cavity, and a bottom surface of the cavity is aligned with an upper surface of the patterned conductive layer. A difference in coefficient of thermal expansion between the main body in a rubbery state and the patterned conductive layer is smaller than 30 ppm/° C. The flip-chip LED is disposed inside the cavity and electrically connected to the patterned conductive layer. The molding compound is disposed inside the cavity and encapsulates the flip-chip LED. A vertical distance between a top surface of the molding compound and the bottom surface of the cavity is smaller than or equal to a depth of the cavity. | 2015-11-12 |
20150325759 | OPTICAL ELEMENT WITH INTEGRATED INDICATOR - Solid state fixtures and packages are disclosed that include an optical element, such as an encapsulant, having an integrated indicator which indicates one or more characteristics of the package to a user, such as package orientation, polarity, chip-type, etc. The host optical element can be substantially symmetrical but for the indicator. Indicators can be additive, such as a bump, or subtractive, such as a hole. The indicator can be visible to the human eye, and/or can be machine detectable, such as by pick-and-place technology. Indicators can be formed by many processes including molding and laser ablation/imprinting, which is particularly suited for use with a hard host material. | 2015-11-12 |
20150325760 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light emitting device includes a light emitting element, a terminal substrate and a fixing member. The light emitting element is a semiconductor laminate having a first semiconductor layer, a light emitting layer, and a second semiconductor layer that are laminated in that order, a first electrode connected to the first semiconductor layer, and a second electrode connected to the second semiconductor layer. The terminal substrate includes a pair of terminals connected to the first electrode and the second electrode, and an insulator layer that fixes the terminals. At least a part of the outer edges of the terminal substrate is disposed more to a center of the light emitting device than the outer edges of the semiconductor laminate. The fixing member fixes the light emitting element and the terminal substrate. | 2015-11-12 |
20150325761 | MOUNTING SUBSTRATE AND LIGHT-EMITTING DEVICE USING THE SAME - To provide a mounting substrate wherein insulation resistance of a metal substrate having an oxide film formed on the surface thereof is ensured, and light reflectance is improved by preventing a light-reflecting material contained in a reflection layer from diffusing into a surface of the metal substrate. | 2015-11-12 |
20150325762 | PACKAGE STRUCTURE AND MANUFACTURING METHOD THEREOF - A package structure and a manufacturing method thereof are disclosed. The package structure includes: a substrate; at least one light emitting diode disposed on the substrate by eutectic bonding; and at least one Zener diode disposed on the substrate by at least one silver glue. The method of manufacturing the package structure includes: providing a substrate; performing a eutectic bonding process to dispose at least one light emitting diode on the substrate; and performing a silver glue bonding process at room temperature to dispose at least one Zener diode on the substrate. | 2015-11-12 |
20150325763 | LED LEADFRAME OR LED SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING LED LEADFRAME OR LED SUBSTRATE - An LED leadframe or LED substrate includes a main body portion having a mounting surface for mounting an LED element thereover. A reflection metal layer serving as a reflection layer for reflecting light from the LED element is disposed over the mounting surface of the main body portion. The reflection metal layer comprises an alloy of platinum and silver or an alloy of gold and silver. The reflection metal layer efficiently reflects light emitted from the LED element and suppresses corrosion due to the presence of a gas, thereby capable of maintaining reflection characteristics of light from the LED element. | 2015-11-12 |
20150325764 | LED chip-on-board component and lighting module - An object of the present invention is to provide a Light Emitting Diode (LED) lamp construction comprising at least one light emitter component, a primary heat sink, and a secondary heat sink. The primary heat sink is in direct contact with the light emitter component and the primary heat sink is electrically insulated from the environment. Significant advantage is obtained by having a primary heat sink in direct contact with a light emitter component, such as a light emitting diode, and simultaneously electrically insulated from the environment. Direct contact between the die or diode and the primary heat sink allows for the most efficient heat transfer, thus more effectively cooling the element. This effect is particularly effective when the primary heat sink is a good thermal and even good electrical conductor. This direct contact between an electrical component such as the light emitting element and a good thermal and electrical conductor such as the primary heat sink is made possible by the electrically insulated nature of the primary heat sink. Thus, shorts are able to be eliminated and an effective heat dissipating construction is made possible. | 2015-11-12 |
20150325765 | THERMOELECTRIC ELEMENT AND METHOD FOR THE PRODUCTION THEREOF - A thermoelectric element includes a first thermoelectric layer and a second thermoelectric layer, wherein a p-n junction is formed when the layers are formed. To specify a generic thermoelectric element that is suitable for a series connection in a thermoelectric generator without cabling, according to the invention—a substrate comprises a first and second contact surface on a cold side and a third contact surface on a hot side of the substrate. A temperature gradient can be applied between the contact surfaces on the cold and hot side. The first thermoelectric layer of the thermoelectric element is arranged on the substrate and connects a second contact surface to a third contact surface. The second thermoelectric layer of the thermoelectric element is arranged on the first thermoelectric layer, the p-n junction thereby being formed, and is connected to the first contact surface. The invention further relates to a method for producing such a thermoelectric element. | 2015-11-12 |
20150325766 | THEMOELECTRIC DEVICE - A thermoelectric device such as that for a motor vehicle may include a housing having a first housing part and a second housing part at least partially delimiting a housing interior. The first housing part and the second housing part may each include a housing wall, which are arranged opposite one another. At least one housing wall may have at least two receiving regions. The at least two receiving regions may respectively include at least one thermoelectric element arranged thereon. The at least two receiving regions may each be surrounding by a surround extending along a circulation direction. The surround of the at least two receiving regions may include a spring-elastic structure. | 2015-11-12 |
20150325767 | THERMOELECTRIC GENERATOR - The invention relates to a thermoelectric generator ( | 2015-11-12 |
20150325768 | THERMOELECTRIC GENERATOR AND PRODUCTION METHOD FOR THE SAME - The thermoelectric generator disclosed herein includes: a first and second electrode opposing each other; and a stacked body having a first and second principal face and a first and second end face, the first and second end face being located between the first and second principal face, and the first and second electrode being respectively electrically connected to the first and second end face. The stacked body is structured so that a plurality of first layers of a first material having a relatively low Seebeck coefficient and a relatively high thermal conductivity and a plurality of second layers of a second material having a relatively high Seebeck coefficient and a relatively low thermal conductivity are alternately stacked. The stacked body includes a carbon containing layer in at least one of the first and second principal face. | 2015-11-12 |
20150325769 | THERMOELECTRIC GENERATION MODULE - A thermoelectric generation module having: a thermoelectric conversion layer in which a plurality of thermoelectric conversion elements are electrically connected to each other in series and radially disposed in a principal surface direction of a substrate; a heat radiation layer that is connected to a center of the thermoelectric conversion layer and disposed on the side opposite to the principal surface of the substrate; a heat insulating layer disposed at a periphery of the heat radiation layer; and a heat absorbing layer that is connected to the periphery of the thermoelectric conversion layer and disposed on the principal surface side of the substrate, wherein the thermoelectric conversion elements each are composed of a p-type semiconductor and an n-type semiconductor, the p-type semiconductor and the n-type semiconductor are alternately and radially disposed, and electrically connected to each other in series with electrodes in sequence. | 2015-11-12 |
20150325770 | FORMATION OF A THERMOPILE SENSOR UTILIZING CMOS FABRICATION TECHNIQUES - Techniques are described to form an absorption stack proximate to a thermopile sensor. In one or more implementations, a thermopile sensor is formed proximate to a semiconductor wafer. An absorption stack is formed proximate to the semiconductor wafer and includes a first layer, a second layer, and a third layer. The first layer may be a material having absorption and/or reflective characteristics. The second layer may be a material having wave phase shift characteristic characteristics. The third layer may be a material having a reflective characteristic. | 2015-11-12 |
20150325771 | PRACTICAL METHOD OF PRODUCING AN AEROGEL COMPOSITE CONTINUOUS THIN FILM THERMOELECTRIC SEMICONDUCTOR MATERIAL BY MODIFIED MOCVD - A method is disclosed of constructing a composite material structure, comprised of an aerogel substrate, which is then overlaid throughout its interior with an even and continuous thin layer film of doped thermoelectric semiconductor such that electrical current is transmitted as a quantum surface phenomena, while the cross-section for thermal conductivity is kept low, with the aerogel itself dissipating that thermal conductivity. In one preferred embodiment this is achieved using a modified metal-organic chemical-vapor deposition (MOCVD) process in the gas phase, with the assist of microwave heating after the reactant gases have evenly diffused throughout the interior of the aerogel substrate. | 2015-11-12 |
20150325772 | METHODS FOR FORMING THERMOELECTRIC ELEMENTS - The present disclosure provides a method for forming a thermoelectric device, comprising providing a semiconductor substrate and providing a first layer of an etching material adjacent to the semiconductor substrate. The etching material facilitates the etching of the semiconductor substrate upon exposure to an oxidizing agent and a chemical etchant. Next, a second layer of a semiconductor oxide is provided adjacent to the first layer, and the second layer is patterned to form a pattern of holes or wires. The second layer and first layer are then sequentially etched to expose portions of the semiconductor substrate. Exposed portions of the semiconductor substrate are then contacted with an oxidizing agent and a chemical etchant to transfer the pattern to the semiconductor substrate. | 2015-11-12 |
20150325773 | REPLICATED THERMOELECTRIC DEVICES - A method of creating a replicated thermoelectric device includes preparing a single thermoelectric device for division. The single thermoelectric device including a plurality of thermoelements positioned between a first substrate and a second substrate. The method further includes dividing the single thermoelectric device to form a replicated thermoelectric device such that the cooling power of the replicated thermoelectric cooling device is substantially equal to twice a cooling power of the single thermoelectric device. | 2015-11-12 |
20150325774 | FREQUENCY SEPARATION BETWEEN QUBIT AND CHIP MODE TO REDUCE PURCELL LOSS - A system, method, and chip to control Purcell loss are described. The chip includes qubits formed on a first surface of a substrate. The method includes determining frequencies of the qubits, and controlling a separation between the frequencies of the qubits and chip mode frequencies of the chip. | 2015-11-12 |
20150325775 | ACOUSTIC WAVE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing an acoustic wave device includes: forming reforming regions in a substrate along a first direction and a second direction intersecting the first direction by irradiating the substrate with a laser beam under different conditions in the first direction and the second direction, the substrate including a piezoelectric substrate on which an IDT (InterDigital Transducer) is formed, and linear expansion coefficients of the piezoelectric substrate being different in the first direction and the second direction; and cutting the substrate in the first direction and the second direction at the reforming regions. | 2015-11-12 |
20150325776 | PIEZOELECTRIC VIBRATION PIECE AND PIEZOELECTRIC VIBRATION DEVICE USING SAME - A piezoelectric vibration piece has an inverted mesa-type structure, comprising a thinned portion serving as a vibration region at a central part of a piezoelectric plate; and a thickened portion formed all along or partly along perimeter of the thinned portion to reinforce the thinned portion. In the piezoelectric vibration piece, contact metals including a large number of discrete metallic thin films are provided on the whole surfaces of the piezoelectric plate. A piezoelectric vibration device comprises the piezoelectric vibration piece which is housed in a package, wherein extraction electrodes of the piezoelectric vibration piece are connected to internal terminals of the package through a conductive adhesive. These structural and technical advantages prevent undesirable flowage of the conductive adhesive before thermal curing. As a result, the piezoelectric vibration piece and the piezoelectric vibration device comprising the same successfully attain excellent vibration characteristics. | 2015-11-12 |
20150325777 | METHOD FOR CONNECTING PIEZOELECTRIC ELEMENT AND CABLE SUBSTRATE, PIEZOELECTRIC ELEMENT HAVING CABLE SUBSTRATE, AND INKJET HEAD INCLUDING PIEZOELECTRIC ELEMENT WITH CABLE SUBSTRATE - A connection method disclosed herein includes softening a resin film of a thermosetting resin by heating an element electrode of a piezoelectric body and a substrate electrode of a flexible cable to be connected to the piezoelectric body with the element electrode and the substrate electrode being pressed into contact with each other via the resin film; partially pushing out the molten resin film from an opposing position of the element electrode and the substrate electrode so as to bring a solder layer provided on the substrate electrode into contact with the element electrode; curing the resin film and melting solder in the solder layer by further raising a heating temperature; discharging excess solder in a direction defined by the cured resin film; and then solidifying the solder in the solder layer so as to solder the element electrode and the substrate electrode together. | 2015-11-12 |
20150325778 | POWER GENERATING ELEMENT - A power generating element includes a magnetostrictive rod through which lines of magnetic force pass in an axial direction thereof, the magnetostrictive rod formed of a magnetostrictive material; a magnetic rod arranged in parallel with the magnetostrictive rod, the magnetic rod formed of a magnetic material; a first coupling mechanism for coupling one end portion of the magnetostrictive rod and one end of the magnetic rod; a second coupling mechanism for coupling the other end portion of the magnetostrictive rod and the other end portion of the magnetic rod; and a coil provided so that the lines of magnetic force pass inside the coil in an axial direction thereof and in which a voltage is generated on the basis of a variation of density of the lines of magnetic force caused when the magnetostrictive rod is expanded or contracted. Further, at least one of the one end portion and the other end portion of the magnetostrictive rod is formed into a male screw portion. | 2015-11-12 |
20150325779 | A POLYMERIC ACTUATOR - The present invention provides a polymeric actuator which has excellent flexibility and elongation rate; low temperature dependability of physical properties such as an elastic modulus and high dielectric breakdown strength, and which can drive in a low electric field. The present invention relates to a polymeric actuator, wherein the polymeric dielectric has a storage elastic modulus at 20° C. [E′(20° C.)] determined by a dynamic viscoelastic measurement at a frequency of 1 Hz of not more than 0.5 MPa,
| 2015-11-12 |
20150325780 | MEMS Component and Method for Encapsulating MEMS Components - A MEMS component includes, on a substrate, component structures, contact areas connected to the component structures, metallic column structures seated on the contact areas, and metallic frame structures surrounding the component structures. A cured resist layer is seated on frame structure and column structures such that a cavity is enclosed between substrate, frame structure and resist layer. A structured metallization is provided directly on the resist layer or on a carrier layer seated on the resist layer. The structured metallization includes at least external contacts of the component and being electrically conductively connected both to metallic structures and to the contact areas of the component structures. | 2015-11-12 |
20150325781 | METHOD FOR PRODUCING AN ELECTRIC COMPONENT AND ELECTRIC COMPONENT - A method for producing an electric component ( | 2015-11-12 |
20150325782 | STORAGE ELEMENT AND STORAGE DEVICE - A storage element includes a storage layer having a magnetization perpendicular to a layer surface and storing information according to a magnetization state of a magnetic material; a fixed magnetization layer having the magnetization as a reference of the information of the storage layer and perpendicular to the layer surface; an interlayer formed of a nonmagnetic material and interposed between the storage layer and the fixed magnetization layer; a coercive force enhancement layer adjacent to the storage layer, opposite to the interlayer, and formed of Cr, Ru, W, Si, or Mn; and a spin barrier layer formed of an oxide, adjacent to the coercive force enhancement layer, and opposite to the storage layer. The storage layer magnetization is reversed using spin torque magnetization reversal caused by a current in a lamination direction of a layer structure including the storage layer, the interlayer, and the fixed magnetization layer, thereby storing information | 2015-11-12 |
20150325783 | MAGNETIC RANDOM ACCESS MEMORY WITH PERPENDICULAR ENHANCEMENT LAYER - The present invention is directed to an MTJ memory element including a magnetic free layer structure which includes one or more magnetic free layers that have a same variable magnetization direction substantially perpendicular to layer planes thereof; an insulating tunnel junction layer formed adjacent to the magnetic free layer structure; a magnetic reference layer structure comprising a first magnetic reference layer formed adjacent to the insulating tunnel junction layer and a second magnetic reference layer separated therefrom by a perpendicular enhancement layer with the first and second magnetic reference layers having a first fixed magnetization direction substantially perpendicular to layer planes thereof; an anti-ferromagnetic coupling layer formed adjacent to the second magnetic reference layer opposite the perpendicular enhancement layer; and a magnetic fixed layer comprising first and second magnetic fixed sublayers with the second magnetic fixed sublayer formed adjacent to the anti-ferromagnetic coupling layer opposite the second magnetic reference layer. | 2015-11-12 |
20150325784 | MAGNETIC ELECTRONIC DEVICE AND MANUFACTURING METHOD THEREOF - A magnetic electronic device comprises a substrate, a first buffer layer, a first CoFeB layer, a first metal oxidation layer, a second buffer and a capping layer. The first buffer layer is disposed on the substrate. The first CoFeB layer is disposed on the first buffer layer. The first metal oxidation layer is disposed on the first CoFeB layer. The second buffer is disposed on the first metal oxidation layer, and the material of the second buffer layer includes platinum, palladium, tantalum or their any combination. The capping layer disposed on the second buffer. A manufacturing method of the magnetic electronic device is also disclosed. | 2015-11-12 |
20150325785 | MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a magnetoresistive element is disclosed. The magnetoresistive element includes a reference layer, a tunnel barrier layer, a storage layer. The storage layer includes a first region and a second region provided outside the first region to surround the first region, the second region including element included in the first region and another element being different from the element. The magnetoresistive element further includes a cap layer including a third region and a fourth region provided outside the third region to surround the third region, the fourth region including an element included in the third region and the another element. | 2015-11-12 |
20150325786 | RRAM CELL STRUCTURE WITH LATERALLY OFFSET BEVA/TEVA - The present disclosure relates to a method of forming a resistive random access memory (RRAM) cell. The method forms a bottom electrode over a bottom electrode via. The method further forms a variable resistive dielectric layer over the bottom electrode, and a top electrode over the variable resistive dielectric layer. The method forms a top electrode via vertically extending outward from an upper surface of the top electrode at a position centered along a first axis that is laterally offset from a second axis centered upon the bottom electrode via. The top electrode via has a smaller width than the top electrode. Laterally offsetting the top electrode via from the bottom electrode via provides the top electrode via with good contact resistance. | 2015-11-12 |
20150325787 | METHOD OF FILLING AN OPENING AND METHOD OF MANUFACTURING A PHASE-CHANGE MEMORY DEVICE USING THE SAME - Example methods of filling an opening and of manufacturing a phase change memory device are disclosed. In an example method, an insulation layer having an opening is formed on a substrate. A material layer is formed on the insulation layer. The material layer fills the opening, and has a void. A first laser beam is irradiated onto the material layer, thereby removing the void or reducing a size of the void. The first laser beam is generated from a solid state laser medium. | 2015-11-12 |
20150325788 | Embedded Nonvolatile Memory Elements Having Resistive Switching Characteristics - Provided are nonvolatile memory assemblies each including a resistive switching layer and current steering element. The steering element may be a transistor connected in series with the switching layer. Resistance control provided by the steering element allows using switching layers requiring low switching voltages and currents. Memory assemblies including such switching layers are easier to embed into integrated circuit chips having other low voltage components, such as logic and digital signal processing components, than, for example, flash memory requiring much higher switching voltages. In some embodiments, provided nonvolatile memory assemblies operate at switching voltages less than about 3.0V and corresponding currents less than 50 microamperes. A memory element may include a metal rich hafnium oxide disposed between a titanium nitride electrode and doped polysilicon electrode. One electrode may be connected to a drain or source of the transistor, while another electrode is connected to a signal line. | 2015-11-12 |
20150325789 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - Disclosed herein are a variable resistance memory device and a method of fabricating the same. The variable resistance memory device may include a first electrode; a second electrode; and a variable resistance layer configured to be interposed between the first electrode and the second electrode, wherein the variable resistance layer includes a Si-added metal oxide. | 2015-11-12 |
20150325790 | METHOD FOR FORMING RESISTIVE RANDOM ACCESS MEMORY CELL - A method for forming a resistive random access memory is provided. The method comprises: steps of: S | 2015-11-12 |
20150325791 | METHODS FOR FORMING ARRAYS OF SMALL, CLOSELY SPACED FEATURES - Methods of forming arrays of small, densely spaced holes or pillars for use in integrated circuits are disclosed. Various pattern transfer and etching steps can be used, in combination with pitch-reduction techniques, to create densely-packed features. Conventional photolithography steps can be used in combination with pitch-reduction techniques to form superimposed patterns of crossing elongate features with pillars at the intersections. Spacers are simultaneously applied to sidewalls of both sets of crossing lines to produce a pitch-doubled grid pattern. The pillars facilitate rows of spacers bridging columns of spacers. | 2015-11-12 |
20150325792 | LARGE AREA ORGANIC PHOTOVOLTAICS - Disclosed herein are large area, multi-layer solar devices comprising a substrate, an active area comprising at least one donor material and at least one acceptor material deposited on a surface of the substrate, wherein the donor and acceptor materials are comprised of organic molecules, and wherein particulates are removed from the surface of the substrate before deposition of the donor and acceptor materials. Particulates may be removed by exposing the surface of the substrate to a stream of at least one compound comprising one or more phases chosen from supercritical, gaseous, solid, and liquid phases. Also disclosed are methods of manufacturing photovoltaic devices comprising providing a substrate, cleaning a surface of the substrate by exposing the surface to a stream of at least one compound comprising one or more phases chosen from supercritical, gaseous, solid, and liquid phases, and depositing an organic active layer on the surface of the substrate. | 2015-11-12 |
20150325793 | POLYMER CONTAINING ALDEHYDE GROUPS, REACTION AND CROSSLINKING OF THIS POLYMER, CROSSLINKED POLYMER, AND ELECTROLUMINESCENT DEVICE COMPRISING THIS POLYMER - The present invention relates to a polymer which comprises at least one structural unit which contains at least one aldehyde group, and to a process for the preparation of a crosslinkable or crosslinked polymer including a polymer which contains aldehyde groups. The present invention thus also relates to a crosslinkable polymer and a crosslinked polymer which is prepared by the process according to the invention, and to the use of this crosslinked polymer in electronic devices, in particular in organic electroluminescent devices, so-called OLEDs (OLED=organic light emitting device). | 2015-11-12 |
20150325794 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT - An aromatic amine derivative represented by the following formula (1). In the formula, Ar | 2015-11-12 |
20150325795 | COMPOUND FOR ORGANIC ELECTRIC ELEMENT, ORGANIC ELECTRIC ELEMENT COMPRISING THE SAME AND ELECTRONIC DEVICE THEREOF - Provided are a compound capable of improving light emitting efficiency, stability, and lifespan of the element, an organic element using the same, and an electric device for the same. | 2015-11-12 |
20150325796 | ORGANIC ELECTROLUMINESCENT DEVICE - Provided is a practically useful organic EL element having high efficiency and high driving stability while being capable of being driven at a low voltage. The organic EL element has a light-emitting layer and any other organic layer between an anode and a cathode opposite to each other. The light-emitting layer contains at least two host materials and at least one light-emitting dopant. At least one of the host materials is a host material selected from compounds each having one or two indolocarbazole skeletons, and at least one of the other host materials is a host material selected from carbazole compounds each substituted with a dibenzofuran or a dibenzothiophene. | 2015-11-12 |
20150325797 | OPTOELECTRONIC MATERIAL AND ORGANIC OPTOELECTRONIC DEVICE AND IMAGE SENSOR - An optoelectronic material includes a first organic molecule and a second organic molecule crosslinked with each other, the first organic molecule and the second organic molecule having wavelength selectivity in a visible ray region. | 2015-11-12 |
20150325798 | ORGANIC LIGHT-EMITTING DEVICES - An organic light-emitting device including a first electrode; a second electrode facing the first electrode; and an emission layer between the first electrode and the second electrode, wherein the emission layer includes a triphenylene-based compound represented by Formula 2, below, and at least one heterocyclic compound selected from compounds represented by Formulae 1A, 1B, 1C, 1D, and 1E. | 2015-11-12 |
20150325799 | CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A condensed cyclic compound represented by Formulae 1A or 1B: | 2015-11-12 |
20150325800 | ANTHRACENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING SAME - An anthracene derivative represented by the following formula (1): wherein in the formula (1), L | 2015-11-12 |
20150325801 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes: a first electrode, a second electrode facing the first electrode, and an organic layer between the first electrode and the second electrode, the organic layer including: an emission layer, an electron transport region between the second electrode and the emission layer, and a mixed layer between the emission layer and the electron transport region, the mixed layer including a first material and a second material, the first material and the second material being selected from a pyrrolidine-based compound and a C | 2015-11-12 |
20150325802 | ORGANOMETALLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An organometallic compound represented by Formula 1 or Formula 2: | 2015-11-12 |
20150325803 | INTEGRATED CONDUCTIVE SUBSTRATE, AND ELECTRONIC DEVICE EMPLOYING SAME - Provided are an integrated conductive substrate simultaneously serving as a substrate and an electrode, and an electronic device using the same. The integrated conductive substrate includes a metal layer composed of a non-ferrous metal, which has a first surface having a first root mean square roughness, and a semiconductor layer containing a semiconductor material, which has a second surface having a second root mean square roughness and is formed on the first surface. Here, the semiconductor layer includes a semiconductor-type planarization layer formed by a solution process using at least one of the semiconductor material and a precursor of the semiconductor material to planarize the first surface of the metal layer, and the second root mean square roughness is smaller than the first root mean square roughness. | 2015-11-12 |
20150325804 | ELECTRONIC DEVICE - A novel electronic device including a flexible display is presented. The electronic device has a flexible display including an organic light emission diodes and a plurality of columnar bodies linked together. Users can transform the shape of the electronic device into a tablet, an eBook, or a hand-held gaming device. The electronic device is configured to resize its main display area in accordance with the selected mode. | 2015-11-12 |
20150325805 | TRANSISTOR ELEMENT - The present invention provides a transistor element having a laminated structure, the laminated structure comprising a sheet-like base electrode being arranged between an emitter electrode and a collector electrode; at least one p-type organic semiconductor layer being provided on each of the surface and the back sides of the base electrode; and a current transmission promotion layer being formed, on each of the surface and back sides of the base electrode, between the base electrode and the p-type organic semiconductor layer or layers provided on each of the surface and back sides of the base electrode. According to the present invention, it becomes possible to provide a transistor element (MBOT) that is, in particular, stably supplied through a simple production process, has a structure capable of being mass-produced, and has a large current modulation effect and an excellent ON/OFF ratio at a low voltage in the emitter electrode and the collector electrode. | 2015-11-12 |
20150325806 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE - It is an object to provide an element structure which is suitable for a light-emitting element using a phosphorescent compound. It is another object to provide a light-emitting element with high luminous efficiency by using the element structure. In particular, it is another object to provide a light-emitting element with high luminous efficiency and long life. A light-emitting element is manufactured, which includes a first light-emitting layer and a second light-emitting layer provided to be in contact with each other between a first electrode and a second electrode, where the first light-emitting layer includes a hole transporting host material and a phosphorescent compound, and the second light-emitting layer includes an electron transporting host material and the phosphorescent compound. | 2015-11-12 |
20150325807 | ORGANOMETALLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - An organometallic compound represented by Formula 1: | 2015-11-12 |
20150325808 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND DISPLAY PANEL THEREOF - An organic light emitting diode (OLED) display device and a display panel thereof are provided. The organic light emitting diode display panel comprises a first substrate, a first electrode, an organic light emitting layer, a second electrode, and a second substrate. The first electrode is disposed on the first substrate. The organic light emitting layer is disposed on the first electrode. The second electrode is disposed on the organic light emitting layer. The second substrate is located on the second electrode. The material of the second electrode comprises an alkaline earth element and silver. The second electrode comprises a first portion and a second portion, and the first portion is located between the second portion and the first substrate. The ratios of the alkaline earth element to silver in the first portion and in the second portion are different. | 2015-11-12 |
20150325809 | ORGANIC ELECTROLUMINESCENT PANEL | 2015-11-12 |
20150325810 | ORGANIC EL LAMINATE - In the organic EL laminate, a gas barrier film, which has a laminated structure composed of an organic film and an inorganic film, adheres to a passivation film, which covers a light emitting element using an organic EL material, by an adhesive in a state in which the inorganic film faces the passivation film and the inorganic film and the passivation film are formed of the same material. | 2015-11-12 |
20150325811 | SYSTEM FOR DISPLAYING IMAGES - A system for displaying images employing a pixel structure. The pixel structure includes a first sub-pixel, a second sub-pixel, and a third sub-pixel, wherein each sub-pixel comprises a color filter layer, an electroluminescent element corresponding to the color filter layer, and a passivation layer formed on the electroluminescent element and covering the electroluminescent element, wherein the filling layer is disposed between the color filter layer and the, and wherein the distance between the first and second sub-pixels is greater than that between the first and third sub-pixels, and wherein the color filter layers of the first sub-pixel, the second sub-pixel, and the third sub-pixel are a red color filter layer, green color filter layer, and blue color filter layer respectively. | 2015-11-12 |
20150325812 | Light-Emitting Device and Electronic Device - A highly reliable light-emitting device is provided. Damage to an element due to externally applied physical power is suppressed. Alternatively, in a process of pressure-bonding of an FPC, damage to a resin and a wiring which are in contact with a flexible substrate due to heat is suppressed. A neutral plane at which stress-strain is not generated when a flexible light-emitting device including an organic EL element is deformed, is positioned in the vicinity of a transistor and the organic EL element. Alternatively, the hardness of the outermost surface of a light-emitting device is high. Alternatively, a substrate having a coefficient of thermal expansion of 10 ppm/K or lower is used as a substrate that overlaps with a terminal portion connected to an FPC. | 2015-11-12 |
20150325813 | EMISSIVE DISPLAY WITH HYBRID POLARIZER - An emissive display comprising an OLED, a first birefringent reflective polarizer, a second birefringent reflective polarizer optically between the OLED and the first birefringent reflective polarizer, a first linear absorbing polarizer having a contrast ratio of less than 100:1 optically between the first birefringent reflective polarizer and the second birefringent reflective polarizer, a second linear absorbing polarizer having a contrast ratio of less than 100:1, where the first birefringent reflective polarizer is optically between the second linear absorbing polarizer and the first linear absorbing polarizer, and a structured optical film optically between the OLED and the second birefringent reflective polarizer. | 2015-11-12 |
20150325814 | DISPLAY PANEL, MANUFACTURE METHOD THEREOF, AND DISPLAY DEVICE - A display panel comprising a substrate ( | 2015-11-12 |
20150325815 | DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - A display device including: a substrate configured to include a first region and a second region formed at an outer periphery of the first region; an emission layer disposed on the first region and the second region of the substrate; a polarizer disposed on the emission layer; a touch panel disposed on the polarizer; a window disposed on the touch panel; and a light blocking layer covering side surfaces of the polarizer and the touch panel and a top surface of the emission layer disposed on the second region of the substrate. The polarizer and the touch panel cover the first region of the substrate and expose the second region of the substrate. | 2015-11-12 |
20150325816 | EMISSIVE DISPLAY WITH REFLECTIVE POLARIZER - An emissive display includes an OLED, a linear polarizer, a reflective polarizer optically between the OLED and the linear polarizer, and a structured optical film optically between the OLED and the reflective polarizer. | 2015-11-12 |
20150325817 | APPARATUS AND METHOD FOR MANUFACTURING ORGANIC LIGHT EMITTING DIODE DISPLAY - An apparatus for manufacturing an organic light emitting diode display and a method for manufacturing an organic light emitting diode display using the same. The apparatus for manufacturing an organic light emitting diode display includes: a chamber; a stage which is disposed inside the chamber and on which an array substrate is seated; and a source portion to evaporate a first solvent in the chamber, such that the solvent condenses on the array substrate. | 2015-11-12 |
20150325818 | POWER STORAGE DEVICE - A power storage device having both replaceability of a battery module and excellent vibration resistance/impact resistance, includes: a bottom plate having a plurality of lower guide members; a top plate provided above the bottom plate and having a plurality of upper guide members facing the lower guide members; a first side plate and a second side plate provided between the bottom plate and the top plate so as to face each other; a back surface plate provided between the first and second side plates and having a plurality of connectors; a battery module inserted between the lower and upper guide members and having connectors to be fitted to the connectors of the back surface plate; and a pressing plate provided between and fixed to the first and second side plates so as to press the battery module. | 2015-11-12 |
20150325819 | ELECTROCHEMICAL DEVICE - The electrochemical device | 2015-11-12 |
20150325820 | FLEXIBLE SECONDARY BATTERY - A flexible secondary battery includes an electrode assembly, a first external cover that is located on a first surface of the electrode assembly, and a second external cover that is located on a second surface of the electrode assembly, the second external cover and the first external cover including a sealing portion where edges of the first external cover and the second external cover are attached to each other to seal the electrode assembly. At least one of the first external cover and the second external cover includes a stress-relief pattern in a center portion. | 2015-11-12 |
20150325821 | ELECTROCHEMICAL ENERGY STORAGE DEVICES AND HOUSINGS - The disclosure provides electrochemical batteries, electrochemical battery housings and methods for assembling electrochemical batteries. The battery housing can include a container, a container lid assembly and an electrical conductor. The container can include a cavity that extends into the container from a cavity aperture. The lid assembly can seal the cavity, and can include an electrically conductive container lid and an electrically conductive flange. The container lid can cover the cavity aperture and can include a conductor aperture that extends through the container lid. The flange can cover the conductor aperture and can be electrically isolated from the container lid. The conductor can be connected to the flange and can extend through the conductor aperture into the cavity. The conductor can be electrically isolated from the container lid. | 2015-11-12 |
20150325822 | FILM-COVERED BATTERY - Provided is a film-covered battery having a film covering material as an exterior body and excellent in long-term reliability. | 2015-11-12 |