| 45th week of 2021 patent applcation highlights part 55 |
| Patent application number | Title | Published |
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| 20210350948 | FULL-AREA ALUMINUM BACK SURFACE FIELD BACK-SIDE SILVER PASTE AND PREPARATION METHOD AND APPLICATION THEREOF - The present invention discloses a full-area aluminum back surface field back-side silver paste and a preparation method and application thereof. The full-area aluminum back surface field back-side silver paste comprises: 10 to 80 parts by weight of silver powder with purity higher than 99.99% under special requirements; 0.5 to 5 parts by weight of homemade lead-free main glass powder; 0 to 3 parts by weight of low-melting-point auxiliary glass powder; 1 to 50 parts by weight of low-melting-point metal powder under special requirements; 15 to 50 parts by weight of organic binder; and 0.01 to 1 part by weight of organic additives. | 2021-11-11 |
| 20210350949 | Stretchable Interconnects for Flexible Electronic Surfaces - A conductive paste and method of manufacturing thereof. The conductive paste comprises conductive particles dispersed in an organic medium, the organic medium comprising: (a) a solvent; and (b) a binder comprising a polyester. The conductive paste typically comprises silver and may contain various other additives. A stretchable conductive layer can be formed by curing the conductive paste. | 2021-11-11 |
| 20210350950 | CONDUCTIVE POLYMERS WITH REDUCED RADIATIVE TRANSPORT AND EMISSIVITY FOR INSULATING MATERIALS - Described herein are materials and methods useful in the field of insulation, including building materials, refrigeration, cryogenics, and shipping, amongst others. Advantageously, the provided materials and method provide reduced radiative heat transfer by applying coatings to insulating materials in order to alter the emissivity, including in the infrared electromagnetic spectrum. Advantageously, the provided materials and methods, while increasing thermal conductivity, provide an overall reduction in heat transfer and therefore provide superior insulation. | 2021-11-11 |
| 20210350951 | ELECTRIC-SUBMERSIBLE-PUMP COMPOSITE DUCT CABLE AND MANUFACTURING METHOD THEREOF - An electric-submersible-pump composite duct cable is provided and includes a steel tube shell and an isolation layer. The isolation layer covers the outer circumferential surface of an ethylene-propylene jacket. The steel tube shell covers the outer circumferential surface of the isolation layer. Multiple signal cable assemblies and multiple injection agent tubes are arranged inside the isolation layer. Each signal cable assembly and each injection agent tube are in staggered arrangement at the internal center of the ethylene-propylene jacket. A manufacturing method of the electric-submersible-pump composite duct cable mainly includes two steps of manufacturing the isolation layer and machining the steel tube shell. | 2021-11-11 |
| 20210350952 | EXTERNAL COOLING SOLUTION FOR MOBILE COMPUTING DEVICES - An air mover external to a mobile computing device provides enhanced cooling to the device by generating forced air delivered to the device via cooling channels connected to openings in the device chassis. If the mobile computing device is passively cooled (is a fanless device), the enhanced cooling can enable the device or device components to operate at a higher power consumption level without exceeding device/component thermal limits or for features that consume high amounts of power (e.g., fast charging) to be incorporated into the device. The air mover can be integrated into or attached to a cable that provides power to the mobile computing device. The air mover can be powered by the cable. The air mover can dynamically adjust the flow rate of the forced air based on device/component performance information (temperature, power consumption, current consumption) or operational state information of the device. | 2021-11-11 |
| 20210350953 | HYBRID CABLE WITH CONNECTING DEVICE - A hybrid cable for collecting data inside a well includes an electrical cable extending along a longitudinal axis of the hybrid cable, an optical fiber extending along the longitudinal axis, an armor that extends along the longitudinal axis, and encircles the electrical cable and the optical fiber, and a connecting device extending along the longitudinal axis, to enclose the electrical cable and the optical fiber, and to be enclosed by the armor. The connecting device has an unsmooth external surface. | 2021-11-11 |
| 20210350954 | Method for creating a transition joint between two cables using canted coil springs and a cable assembly having such a transition joint - A cable assembly ( | 2021-11-11 |
| 20210350955 | Cable For Power-Over-Ethernet Having An Extended Usable Length - A method of extending the usable length of a power-over-ethernet cable includes the steps of providing twisted pairs of wires with the conductor of each wire being a 20 AWG or 22 AWG conductor and terminating the cable at an RJ-45 style connector. The connector for the 20 AWG conductors has an insert therein with holes that can accommodate 20 AWG conductors. FEP, PVC or PP insulation may surround each conductor. | 2021-11-11 |
| 20210350956 | SHIELD-SUPPORTING FILLER FOR DATA COMMUNICATIONS CABLES - Methods of design, manufacture and implementations of balanced twisted pair cables with a barrier tape or shield, with tuned attenuation, impedance, and coupling properties. A filler is included within the cable to separate the pairs and provide a support base for the shield, allowing for optimized ground plane uniformity and stability for tuned attenuation, impedance, and coupling properties. The filler orientation, shape, and size provides support for the shield such that a gap is provided between the shield and the twisted pairs with a given minimum size without increasing the maximum cable core size. The length of arms of the filler may be adjusted to fine-tune the size and shape of this gap and control air-dielectric volume and radial contact or spacing between any pair(s) and the shield, tuning electrical performance characteristics caused by non-linear effects of electromagnetic interactions at short ranges between the pairs, shield, filler, or other components. | 2021-11-11 |
| 20210350957 | Cabling Method of Superconducting Flat Wires - A structure and method provide cables of high-temperature superconducting flat tape and/or filament wires, with a small bending diameter. A cable has a former having cross section that includes a rectangle having rounded ends (i.e. an obround), and the flat tape is wound around the surface of the former at an angle to minimize bending. The former surface may have raised helical ribs or lowered grooves to provide tape registration in multi-layer configurations. Tape may be wound from a spool onto the former under tension, and cut with a laser cutter to produce fine filaments immediately before winding. The former may be slit longitudinally to prevent loop eddy currents and reduce AC losses. The wound cable may be jacketed to provide a cable-in-conduit conductor (CICC), and coolant channels may be provided in the jacket or in the former. | 2021-11-11 |
| 20210350958 | SYSTEM AND METHOD OF PRINTING INDICIA ONTO ARMORED CABLE - A method according to the teachings of the present disclosure may include disposing a sheath around a conductor assembly, with an outer surface of the sheath defining spaced apart crowns and valleys. An outlet of at least one ink jet print head may be positioned adjacent the sheath at an angle of 60 degrees to 120 degrees with respect to a longitudinal axis of the sheath. The method may also include using at least one ink jet print head to print marking indicia on the sheath, the marking indicia indicating at least characteristic of the electrical cable assembly. | 2021-11-11 |
| 20210350959 | ELECTRICAL BUSHING HAVING AN ANTI-ROTATION MOUNTING FLANGE AND METHOD FOR MOUNTING THE SAME - An electrical bushing having an anti-rotation mounting flange for preventing rotation of a body element of the electrical bushing is provided. The electrical bushing includes a mounting flange, at least one locking element and a body element having a circumferential protrusion. At least one first recess is formed in the circumferential protrusion, and the at least one locking element is configured to engage with the at least one first recess and with the mounting flange for restricting relative rotation of the body element relative to the mounting flange about a longitudinal axis R. A further aspect provides an electrical transformer including at least one electrical bushing according to the above. A yet further aspect provides a method for mounting the electrical bushing according to the above. | 2021-11-11 |
| 20210350960 | Arrester Temperature Monitor - An instrumented electric power voltage arrester includes a temperature sensor, wireless transmitter, and a visual over-temperature indicator. A disk shaped module, a replacement varister block, or a dummy block containing the sensor/transmitter is placed between varister blocks inside the arrester housing. A strap-on module is attached to the outside of the arrester housing. The sensor/transmitter utilizes a harvesting power supply that draws electric power for the electronics from the power line protected by the arrester. An ambient temperature sensor may be utilized to enhance accuracy. The temperature sensor/transmitter typically sends arrester monitoring data wirelessly to an RTU or handheld unit located outside the arrester, which relays the monitoring data to an operations control center that scheduled replacement of the arrester based on the monitoring data. A surge counter keeps track of the number of equipment and lightning related temperature surges experienced by the arrester. | 2021-11-11 |
| 20210350961 | Fe-Si Base Alloy and Method of Making Same - A soft magnetic alloy having a good combination of formability and magnetic properties is disclosed. The alloy has the formula | 2021-11-11 |
| 20210350962 | POWDER MAGNETIC CORE AND METHOD FOR PRODUCING THE SAME - A powder magnetic core containing a magnetic particle of an Fe-based Cr-containing amorphous alloy and an organic binding substance is provided as a powder magnetic core with a small loss and high initial permeability. The depth profile of the composition determined from the surface of the magnetic particle in the powder magnetic core has the following characteristics. (1) An oxygen-containing region with an O/Fe ratio of 0.1 or more can be defined from the surface of the magnetic particle, and the oxygen-containing region has a depth of 35 nm or less from the surface. (2) A carbon-containing region with a C/O ratio of 1 or more can be defined from the surface of the magnetic particle, and the carbon-containing region has a depth of 5 nm or less from the surface. (3) The oxygen-containing region has a Cr-concentrated portion with a bulk Cr ratio of more than 1. | 2021-11-11 |
| 20210350963 | Items with Magnetic Straps and Cables - Cables are magnetically attracted to magnets in straps and other items such as electronic devices. The cables may contain signal lines to convey power and/or data. Magnetic material that is attracted to magnetic fields may be incorporated into the signal lines and/or other structures in the cables. The straps may have flexible magnets and/or other magnets extending along their lengths. The magnets of the straps create magnetic fields that attract the cables. Electronic devices may also have housings that contain magnets to attract the cables. Using magnetic attraction, cables can be removably attached to straps and other items during operation of an electronic device, thereby helping to prevent tangling of the cables. | 2021-11-11 |
| 20210350964 | COIL COMPONENT - A coil component includes a support substrate, a coil portion disposed on at least one surface of the support substrate, a magnetic body, in which the support substrate and the coil portion are disposed, having a through-portion penetrating through a center of the coil portion, a nonmagnetic layer disposed below the through-portion, and an insulating layer disposed between the nonmagnetic layer and the through-portion. | 2021-11-11 |
| 20210350965 | INDUCTIVE DEVICE - The utility model provides an inductive device, including a columnar magnetic core provided with grooves on side surfaces thereof; a frame assembly including embedding portions adapted to the grooves in shape, the embedding portions being embedded in the grooves; and an inductive coil wound onto the side surfaces of the columnar magnetic core. The inductive device of the utility model has the advantages of saved winding use amount and prolonged service life. | 2021-11-11 |
| 20210350966 | LOW-PROFILE TRANSFORMER AND RELATED COMPONENTS, SYSTEMS, AND METHODS - A transformer includes an outer cabinet and an inner tank. The outer cabinet includes a base configured to be installed below ground level, a housing wall configured to be installed at least partially below ground level, and a sill coupled to the housing wall and configured to be installed above ground level. The sill includes a top access opening between an interior space of the outer cabinet and an exterior of the outer cabinet. The inner tank is disposed on the base at least partially below ground level and includes an active part including a transformer circuit. The inner tank includes a plurality of terminals electrically coupled to the active part, each terminal extending from the inner tank into the interior space of the outer cabinet along a respective terminal axis that passes through the top access opening at a respective upward angle with respect to ground level. | 2021-11-11 |
| 20210350967 | REINFORCED TRANSFORMER CORE FRAME AND MANUFACTURING METHOD - A transformer core frame is provided with a reinforcement structure to form a reinforced transformer core frame. The reinforcement structure comprises one or several reinforcement panels comprising a honeycomb structure and affixed to the transformer core frame. A method of producing a reinforced transformer core frame is also described. | 2021-11-11 |
| 20210350968 | REACTOR - A reactor includes a coil that includes a wound portion and a magnetic core that is arranged inside of the wound portion and outside of the wound portion, wherein the magnetic core is formed by combining a plurality of core pieces, at least one core piece of the plurality of core pieces is a first core piece constituted by a molded body of a composite material containing a magnetic powder and a resin, the first core piece includes a slit portion in a region arranged inside of the wound portion, a depth direction of the slit portion extends along a direction that intersects an axial direction of the first core piece, and the slit portion is provided so as to be open in an outer peripheral surface of the first core piece on one side of the depth direction and be closed on the other side. | 2021-11-11 |
| 20210350969 | MULTI-PHASE COUPLED INDUCTOR AND MANUFACTURING METHOD THEREOF - A multi-phase coupled inductor includes at least three windings between a first plane and a second plane and a magnetic core that includes a first magnetic core, a second magnetic core and at least three magnetic core pillars, the first and second magnetic cores are respectively located at two ends of the windings, the magnetic core pillars connect the first and second magnetic cores and form at least three magnetic core units together with the first and second magnetic cores. The magnetic core units and the windings are arranged correspondingly on a one-to-one basis, the magnetic core units surround the corresponding windings and extend from the first plane to the second plane in a same direction, and projections of the at least three magnetic core units on the first plane enclose at least three enclosed areas which correspond to the windings on a one-to-one basis. | 2021-11-11 |
| 20210350970 | CHIP INDUCTOR AND METHOD FOR MANUFACTURING THE SAME - A chip inductor includes a sealing body having a mounting surface and a coil conductor sealed in an interior of the sealing body, wherein the coil conductor includes a first coil end exposed from the mounting surface of the sealing body, a second coil end exposed from the mounting surface of the sealing body, and a spiral portion of spiral form connected to the first coil end and the second coil end and routed along a normal direction of the mounting surface of the sealing body from the first coil end and the second coil end. | 2021-11-11 |
| 20210350971 | COIL COMPONENT - A coil component includes a support substrate, a coil portion disposed on the support substrate, and a body in which the support substrate and the coil portion are disposed. The coil portion includes a coil pattern portion, a lower pattern portion connected to the coil pattern portion and disposed on one surface of the support substrate, a dummy pattern portion disposed to overlap the lower pattern portion on another surface of the support substrate opposite to the one surface, and a through-via penetrating through the support substrate and connecting the lower pattern portion and the dummy pattern portion to each other. The lower pattern portion and the dummy pattern portion are externally exposed through one surface of the body. The through-via has one surface externally exposed through the one surface of the body. | 2021-11-11 |
| 20210350972 | STACKED INDUCTOR DEVICE - A stacked inductor device including an 8-shaped inductor structure a stacked coil. The 8-shaped inductor structure includes a first coil and a second coil. The first coil is disposed in a first area. The first coil includes a first sub-coil and a second sub-coil, and the first sub-coil and the second sub-coil are disposed with an interval circularly with each other. The second coil is disposed in a second area, and the second coil is coupled with the first coil on a boundary between the first area and the second area. The second coil includes a third sub-coil and a fourth sub-coil, and the third sub-coil and the fourth sub-coil are disposed with an interval circularly with each other. The stacked coil is coupled to the first coil and the second coil and is stacked partially on or under the first coil and the second coil. | 2021-11-11 |
| 20210350973 | WINDING ASSEMBLY AND MAGNETIC ELEMENT - Present disclosure provides a winding assembly and a magnetic element. The winding assembly includes a circuit board with a central hole and a first winding wound around the central hole in the circuit board; the first winding includes N turns of coil on at least two wiring layers; a second end of at least one turn of coil on a first wiring layers is connected to a first end of next turn of coil at corresponding position on a second wiring layer of the circuit board. The magnetic element includes a magnetic core and a winding assembly sleeved on a magnetic leg. | 2021-11-11 |
| 20210350974 | WINDING ASSEMBLY AND MAGNETIC ELEMENT - Present disclosure provides a winding assembly and a magnetic element. The winding assembly comprises a substrate with a central hole and a first winding disposed in the substrate, the first winding comprising two layers of coil wound around a central hole in the substrate; wherein, a second end of a first layer of coil away from the central hole is connected to a first end of a second layer of coil away from the central hole, and a first end of the first layer of coil close to the central hole and a second end of the second layer of coil close to the central hole serve as a starting-end and a finishing-end of the first winding, respectively. The magnetic element comprises a winding assembly and a magnetic core, and the winding assembly is sleeved on a magnetic leg of the magnetic core. | 2021-11-11 |
| 20210350975 | WINDING ASSEMBLY AND MAGNETIC ASSEMBLY - The present invention provides a winding assembly and a magnetic assembly. The winding assembly comprises a first coil and a circuit board, and the first coil is embedded inside the circuit board; wherein the first coil comprises a conductive wire with at least one turn, and a height of the conductive wire in a direction perpendicular to the circuit board is not less than a width of the conductive wire in a direction parallel to the circuit board. The magnetic assembly comprises a first winding assembly and a magnetic core; wherein the first winding assembly comprises a first coil and a first circuit board, and the first coil comprises a conductive wire with at least one turn, the first coil is embedded inside the first circuit board, the first winding assembly is assembled with the magnetic core. | 2021-11-11 |
| 20210350976 | COIL COMPONENT - A coil component includes a body having one surface and the other surface, opposing each other, and wall surfaces, and including a metal magnetic powder particle and an insulating resin; a coil portion disposed in the body and including first and second lead-out portions exposed from the one surface of the body to be spaced apart from each other; first and second external electrodes arranged on the one surface of the body to be spaced apart from each other and respectively connected to the first and second lead-out portions; a cover insulating layer covering the other surface of the body and extending to at least portion of each of the wall surfaces of the body; and an oxide insulating film disposed on a surface of the metal magnetic powder particle exposed from the one surface of the body and including metal ions of the metal magnetic powder particle. | 2021-11-11 |
| 20210350977 | POWER MODULE, POWER SUPPLY SYSTEM AND MULTI-PHASE INVERSE-COUPLED INDUCTOR - The present disclosure relates to a power module, The power module includes an inverse-coupled inductor and a plurality of half-bridge modules, The inverse-coupled inductor includes: a plurality of windings and a magnetic core. The plurality of windings are linear windings between a first plane and a second plane. The first magnetic core and the second magnetic core are located at both ends of each of the windings, the magnetic core pillars connect the first magnetic core and the second magnetic core to form a plurality of magnetic core units, and the plurality of magnetic core units surround corresponding windings in a same direction from the first plane to the second plane. Projections of the plurality of magnetic core units on the first plane form a plurality of closed areas. | 2021-11-11 |
| 20210350978 | COIL STRUCTURE, LEAD FRAME, AND INDUCTOR - A coil structure includes metal plates each including a spiral conductor, and a row of terminals, aligned in a predetermined direction on an outer side of the conductor, and formed by plate portions thicker than the conductor. Two ends of the conductor are connected to two adjacent plate portions for each metal plate. The row of terminals of a first metal plate is bonded to the row of terminals of a second, adjacent metal plate. The position where the two ends of the conductor connect to the two adjacent plate portions shifts one place toward the second end for each upward increase in level within a laminate along a laminated direction of the metal plates, so that the conductors of each of the metal plates are connected in series to form a spiral coil. | 2021-11-11 |
| 20210350979 | COIL STRUCTURE, LEAD FRAME, AND INDUCTOR - A coil structure includes layered metal plates, wherein each of the metal plates includes a lead wire portion having a spiral shape, end portion thick plate portions formed at both ends of the lead wire portion and thicker than the lead wire portion, and an inside thick plate portion formed with a thickness the same as the end portion thick plate portions, the inside thick plate portion being arranged inside a spiral famed by the lead wire portion and being away from the lead wire portion, and wherein adjacent metal plates are bonded to each other at one of the end portion thick plate portions, the lead wire portions of the respective metal plates are connected in series to form a coil having a spiral shape, and the inside thick plate portions of the adjacent metal plates are bonded to each other to form a magnetic core. | 2021-11-11 |
| 20210350980 | COIL COMPONENT - A coil component includes a support substrate, a coil portion disposed on at least one surface of the support substrate, a body, in which the support substrate and the coil portion are disposed, having one surface and the other surface opposing each other, a first external electrode and a second external electrode disposed on the other surface of the body to be spaced apart from each other and connected to the coil portion, a marking portion disposed on the one surface of the body, and a first insulating layer disposed on the one surface of the body and having an opening exposing the marking portion. The marking portion has a thickness less than or equal to a thickness of the first insulating layer. | 2021-11-11 |
| 20210350981 | ELECTRONIC COMPONENT - An electronic component includes a multilayer body including inner electrodes and dielectric layers that are alternately stacked, and outer electrodes that are electrically connected to the inner electrodes. The multilayer body includes first and second main surfaces opposite each other in a stacking direction, first and second side surfaces opposite each other in a width direction, and first and second end surfaces opposite each other in a length direction. At least one of the outer electrodes is located on at least one of the first side surface or the second side surface of the multilayer body and is directly connected to the inner electrodes at positions spaced away from the at least one of the first side surface or the second side surface toward the inside of the multilayer body. | 2021-11-11 |
| 20210350982 | DIELECTRIC SUBSTANCE, ELECTRONIC DEVICE AND MULTILAYER CERAMIC CAPACITOR - A dielectric substance includes a core-shell grain having a twin crystal structure. An interface of the twin crystal structure of the core-shell grain extends from a shell on one side, passes through a core, and extends to the shell on the other side. | 2021-11-11 |
| 20210350983 | ELECTRONIC COMPONENT - An electronic component includes a laminate in which a plurality of dielectric layers and a plurality of internal electrodes are alternately laminated and external electrodes electrically connected to the internal electrodes. A side margin portion as a region in which the plurality of internal electrodes is not provided when a section of the laminate having the length direction and the width direction is viewed from the laminating direction includes a plurality of side margin layers laminated in the width direction. An outer layer portion as a region in which the plurality of internal electrodes is not provided except for the side margin portion when a section of the laminate including the laminating direction and the width direction is viewed from the length direction includes a plurality of layer-margin layers laminated in the laminating direction. | 2021-11-11 |
| 20210350984 | CAPACITOR COMPONENT AND METHOD OF MANUFACTURING THE SAME - A capacitor component includes a body having a first surface and a second surface opposing each other and including a multilayer structure in which a plurality of dielectric layers are stacked and first and second internal electrodes are alternately disposed with respective dielectric layers interposed therebetween and exposed to the first surface and the second surface, respectively, first and second metal layers covering the first surface and the second surface and connected to the first and second internal electrodes, respectively, first and second ceramic layers covering the first and second metal layers, and first and second external electrodes covering the first and second ceramic layers and connected to the first and second metal layers to be electrically connected to the first and second internal electrodes, respectively. | 2021-11-11 |
| 20210350985 | CAPACITOR COMPONENT - A capacitor component includes a body including a first surface and a second surface opposing each other in a first direction, a third surface and a fourth surface connected to the first and second surfaces and opposing each other in a second direction, a fifth surface and a sixth surface connected to the first to fourth surfaces and opposing each other in a third direction, and including a first dielectric layer, and a first internal electrode and a second internal electrode disposed to oppose each other in the first direction with the first dielectric layer interposed therebetween, and a first side margin portion and a second side margin portion, respectively including a second dielectric layer, a first margin electrode, and a second margin electrode, disposed in parallel with the fifth and sixth surfaces of the body, and respectively disposed on the fifth and sixth surfaces of the body. | 2021-11-11 |
| 20210350986 | WATERPROOF PRESSING STRUCTURE AND MEMBRANE SWITCH CIRCUIT BOARD USING THE SAME - A waterproof pressing structure including a first membrane, at least one first contact, a second membrane, at least one second contact, an insulation layer and a hydrophobic material is provided. The first contact is located on the first membrane, the second contact is located on the second membrane, and the insulation layer is interposed between the first membrane and the second membrane, wherein the first membrane, the second membrane and the insulation layer are stacked in a vertical direction, and the hydrophobic material is respectively formed on the two surfaces of the first contact and the second contact to form a low surface tension zone between the first contact and the second contact. | 2021-11-11 |
| 20210350987 | PRESS-TYPE INPUT DEVICE AND PRESS-ROTATE-TYPE INPUT DEVICE - A press-type input device includes a first pressing member, a second pressing member, a base, and a holding member. The first pressing member has a pressure receiving surface and a first axis and is tiltable around the first axis. The second pressing member has a second axis and is tiltable around the second axis. The base includes a detection unit configured to detect a tilt of the second pressing member. The holding member is configured to hold, together with the base, the first pressing member and the second pressing member. A location of at least one of the first axis or the second axis is variable in accordance with a pushed location on the pressure receiving surface. When viewed in a direction vertical to the pressure receiving surface, the second axis and the detection unit do not overlap each other. | 2021-11-11 |
| 20210350988 | KINEMATIC LINKAGE ARRANGEMENT FOR A SWITCHING DEVICE - A switching device having a pole assembly, a drive unit, and a kinematic linkage arrangement is provided. The pole assembly includes interrupter units operably connected via an interlink arrangement representing a circuit breaker and a grounding switch, respectively. The drive unit operates the interrupter units. The kinematic linkage arrangement includes at least a lever member operably connected to the interlink arrangement and the drive unit, a cam member rigidly connected to the drive unit, and an elastic member adjustably connected to the cam member. The kinematic linkage arrangement transfer a predefined torque to the drive unit to maintain the circuit breaker in an open state. | 2021-11-11 |
| 20210350989 | ELECTROMAGNETIC DRIVE FOR A POWER CIRCUIT-BREAKER WITH A VACUUM INTERRUPTER - A drive unit is provided for a moving contact of a vacuum tube. The drive unit has a tube pin which is conductively connected to the moving contact, a drive which is connected to the tube pin, and a conductor bridge. The drive moves the tube pin. The conductor bridge is directly conductively connected to the tube pin and a stationary conductor and bridges a travel of the tube pin between a conductive switching state of the vacuum tube and a non-conductive switching state. A magnet drive is provided, which contains a first magnet element, which is connected to the tube pin, and a second magnet element. The two magnet elements are configured to build up a magnetic force between them when current is flowing through the vacuum tube and in this way generates a contact-pressure force of the moving contact onto a fixed contact of the vacuum tube. | 2021-11-11 |
| 20210350990 | GAS CIRCUIT BREAKER - There is provided a gas circuit breaker that can reduce deformation of an insulation nozzle and leakage of arc-extinguishing gas compressed to be sprayed to an arc, and can more surely maintain electric insulation performance. A gas circuit breaker | 2021-11-11 |
| 20210350991 | INTERRUPTER AND INTERRUPTER SYSTEM - An interrupter includes a gas producer, an actuator pin, and an electrical conductor. The electrical conductor includes a first terminal portion, a first separable portion, a second terminal portion, and a second separable portion. The second separable portion is electrically connected to the first separable portion in parallel. A first timing when the first separable portion starts to be cut off from the first terminal portion is earlier than a second timing when the second separable portion starts to be cut off from the second terminal portion. | 2021-11-11 |
| 20210350992 | WINDING DEVICE FOR WINDING COIL WIRE FOR A RELAY - The present disclosure relates to a winding device for a coil yoke of a relay. The coil yoke may include first and second yoke limbs each with first and second coil formers that extend in the direction of first and second longitudinal axes and are arranged parallel to one another. The winding device comprises a rotatable coil receptacle which can be rotated around an axis of rotation which is oriented parallel to the first and second longitudinal axes, to hold the coil yoke. The coil receptacle may support the coil yoke displaceably transversely to the axis of rotation to position the coil formers with the first and second longitudinal axes on the axis of rotation for winding coil wire onto said first and second coil formers. The winding device may also include a winding nozzle configured to dispense the coil wire parallel to the axis of rotation. | 2021-11-11 |
| 20210350993 | ELECTRICAL CONNECTOR WITH NON-LINEAR SPRING FORCE - Electrical connectors are provided for electrically coupling two electrical components. Opposing ends of the connector are coupled to each of the electrical components. At the first end, the connector is disposed in an opening of the first electrical component to establish electrical connection. The first end includes multiple contact portions that are biased with a non-linear spring force against the sides of the opening. | 2021-11-11 |
| 20210350994 | ACTIVE/PASSIVE FUSE MODULE - An active/passive fuse module including a base, a busbar disposed on the base and including a fuse element extending over a cavity in a top surface of the base and having a plurality of weak points formed therein, a pyrotechnic interrupter (PI) disposed atop the base and including a piston disposed within a shaft above the fuse element, the piston having an edge with a geometry that corresponds to a geometry of a pattern defined by the weak points in the fuse element, a first pyrotechnic ignitor coupled to a controller and configured to detonate and force the piston through the fuse element upon receiving an initiation signal from the controller, and a second pyrotechnic ignitor coupled to the busbar by a pair of leads and configured to detonate and force the piston through the fuse element upon an increase in voltage across the leads. | 2021-11-11 |
| 20210350995 | ELECTRON GUN - An electron gun includes: a cathode, which has a cathode holder and a cathode body; and a Wehnelt cylinder. The cathode holder receives the cathode body and the Wehnelt cylinder is suitable for bundling free electrons, which can escape from the cathode body toward the Wehnelt cylinder, to form an electron beam. The Wehnelt cylinder is interlockingly arranged, at least in some parts along a first inner surface facing the cathode holder, on an outer surface of the cathode holder and at least partly extends around the cathode holder. | 2021-11-11 |
| 20210350996 | METHODS AND SYSTEMS FOR A MAGNETIC MOTOR X-RAY ASSEMBLY - Various methods and systems are provided for an x-ray imaging system. In one example, an x-ray tube of the imaging system includes a rotor with a core forming a continuous unit with at least one of a retention sleeve and a bearing assembly sleeve. The rotor further includes one or more magnets disposed in the core and maintained in place by the retention sleeve. | 2021-11-11 |
| 20210350997 | X-RAY SOURCE TARGET - An X-ray source includes a target configured to generate X-rays when impacted by an electron beam. The target includes one or more thermally conductive layers; and one or more X-ray generating layers interleaved with the thermally conductive layers, wherein at least one X-ray generating layer comprises regions of X-ray generating material separated by thermally conductive material within the respective X-ray generating layer. | 2021-11-11 |
| 20210350998 | SAMPLE HOLDER FOR ELECTRON MICROSCOPY - A sample holder tip for use in transmission electron microscopy (TEM) or scanning electron microscopy (SEM) for performing in-situ experiments is described which facilitates in situ analysis of air-sensitive samples and allows physical manipulation of the sample. This includes, but is not limited to translation, rotation, electrical biasing, and heating/cooling for one or more individual cradles. The sample holder tip incorporates a compact design which eases sample loading and enables direct linkages between consecutive cradles, allowing a single tilt actuator to rotate each cradle around its respective eucentric position. Each of the connecting wires incorporates one or more bends or kinks which enable conductive access to the sample holder tip while also preserving the ability to also retract/extend the tip and tilt individual cradles with at least two degrees of freedom. | 2021-11-11 |
| 20210350999 | Imaging Method and Imaging System - This invention pertains to an imaging method, the purpose of which is to reveal, over a wide range, information about a plurality of layers contained in a multilayer structure, or form an image of the revealed applicable layers. The method proposed includes: a step in which, while rotating the sample with the axis of the normal line of the sample surface as the axis of rotation, the sample is irradiated with an ion beam from a direction inclined with respect to the normal line direction, via a mask having an opening which selectively allows the passage of an ion beam and which is disposed at a position distant from the sample, thereby forming a hole with a band-shaped sloped surface that is inclined with respect to the sample surface; and a step in which a first image viewed from a direction intersecting with the sloped surface of the applicable layer is formed, on the basis of a signal obtained by irradiating, with a charged particle beam, the applicable layer contained in the band-shaped sloped surface. | 2021-11-11 |
| 20210351000 | Imaging Device - An object of the invention is to accurately correct a deviation in position or angle between observation regions in an imaging device that acquires images of a plurality of sample sections. The imaging device according to the invention identifies a correspondence relationship between the observation regions between the sample sections using a feature point on a first image, corrects a deviation between the sample sections using a second image in a narrower range than the first image, and after reflecting a correction result, acquires a third image having a higher resolution than the second image (see FIG. | 2021-11-11 |
| 20210351001 | METHOD OF IMAGING A 2D SAMPLE WITH A MULTI-BEAM PARTICLE MICROSCOPE - A fast method of imaging a 2D sample with a multi-beam particle microscope includes the following steps: providing a layer of the 2D sample; determining a feature size of features included in the layer; determining a pixel size based on the determined feature size in the layer; determining a beam pitch size between individual beams in the layer based on the determined pixel size; and imaging the layer of the 2D sample with a setting of the multi-beam particle microscope based on the determined pixel size and based on the determined beam pitch size. | 2021-11-11 |
| 20210351002 | METHOD FOR STRUCTURING A DECORATIVE OF TECHNICAL PATTERN IN AN OBJECT MADE OF AN AT LEAST PARTIALLY TRANSPARENT AMORPHOUS, SEMI-CRYSTALLINE OR CRYSTALLINE MATERIAL - A method for structuring a decorative or technical pattern in the thickness of an object made of an at least partially transparent amorphous, semi-crystalline or crystalline material, wherein the object is made of an at least partially transparent material including a top surface and a bottom surface which extends away from the top surface. The top or bottom surfaces is provided with a mask defining an opening whose outline corresponds to the profile of the pattern to be structured, the mask covering the top or bottom surface at the positions which are not to be structured. The pattern is structured with a mono- or multicharged ion beam through the opening of the mask, wherein the mechanical properties of the mask are sufficient to prevent the ions of the ion beam from etching the top or bottom surface at the positions where this top or bottom surface is covered by the mask. | 2021-11-11 |
| 20210351003 | SYSTEMS AND METHODS FOR SELECTIVE MOLECULAR ION DEPOSITION - Methods include directing a group of ions through a separation region of an ion manipulation apparatus, separating the group of ions in the separation region based on ion mobility, selecting a subset of the group of ions based on a dependence between ion mobility and ion arrival time of the separated ions at a deposition switch of the ion manipulation apparatus, and depositing the selected subset of ions on a substrate. Related systems and ion manipulation apparatus are disclosed. Also disclosed are methods and system that provide concurrent ion accumulation and ion separation in coupled and switchable electrode regions using traveling wave electric fields. | 2021-11-11 |
| 20210351004 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus for processing a workpiece with plasma includes a stage configured to place thereon the workpiece, a waveguide part configured to introduce plasma-generating electromagnetic waves in a VHF band into the plasma processing apparatus, and a dielectric window configured to transmit the electromagnetic waves introduced through the waveguide part to a plasma processing space formed on a workpiece placement side of the stage. The dielectric window is an annular member disposed so as to face a plasma processing space side of the stage and includes multiple convex portions, which protrude toward the stage and are arranged on the stage side along a circumferential direction at regular intervals. The convex portions each has a circumferential width of ⅛ to ⅜ of the wavelength of the electromagnetic waves inside the dielectric window. | 2021-11-11 |
| 20210351005 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - A plasma processing apparatus includes a vacuum container and a plasma source that generates plasma in the vacuum container. The plasma source includes an antenna, an RF power supply connected to one end of the antenna and configured to supply an RF power to the antenna, and a variable capacitor connected to the other end of the antenna and having a variable capacitance. | 2021-11-11 |
| 20210351006 | VARIABLE OUTPUT IMPEDANCE RF GENERATOR - Various RF plasma systems are disclosed that do not require a matching network. In some embodiments, the RF plasma system includes an energy storage capacitor; a switching circuit coupled with the energy storage capacitor, the switching circuit producing a plurality of pulses with a pulse amplitude and a pulse frequency, the pulse amplitude being greater than 100 volts; a resonant circuit coupled with the switching circuit. In some embodiments, the resonant circuit includes: a transformer having a primary side and a secondary side; and at least one of a capacitor, an inductor, and a resistor. In some embodiments, the resonant circuit having a resonant frequency substantially equal to the pulse frequency, and the resonant circuit increases the pulse amplitude to a voltage greater than 2 kV. | 2021-11-11 |
| 20210351007 | SURFACE CHARGE AND POWER FEEDBACK AND CONTROL USING A SWITCH MODE BIAS SYSTEM - Systems, methods and apparatus for regulating ion energies in a plasma chamber and avoiding excessive and damaging charge buildup on the substrate surface and within capacitive structures being built on the surface. An exemplary method includes placing a substrate in a plasma chamber, forming a plasma in the plasma chamber, controllably switching power to the substrate so as to apply a periodic voltage function (or a modified periodic voltage function) to the substrate, and modulating, over multiple cycles of the periodic voltage function, the periodic voltage function responsive to a defined distribution of energies of ions at the surface of the substrate so as to effectuate the defined distribution of ion energies on a time-averaged basis, and to maintain surface charge buildup below a threshold. | 2021-11-11 |
| 20210351008 | NANOSECOND PULSER RF ISOLATION FOR PLASMA SYSTEMS - Embodiments of the invention include a plasma system. The plasma system includes a plasma chamber; an RF driver configured to drive bursts into the plasma chamber with an RF frequency; a nanosecond pulser configured to drive pulses into the plasma chamber with a pulse repetition frequency, the pulse repetition frequency being less than the RF frequency; a high pass filter disposed between the RF driver and the plasma chamber; and a low pass filter disposed between the nanosecond pulser and the plasma chamber. | 2021-11-11 |
| 20210351009 | NANOSECOND PULSER THERMAL MANAGEMENT - Some embodiments include a thermal management system for a nanosecond pulser. In some embodiments, the thermal management system may include a switch cold plates coupled with switches, a core cold plate coupled with one or more transformers, resistor cold plates coupled with resistors, or tubing coupled with the switch cold plates, the core cold plates, and the resistor cold plates. The thermal management system may include a heat exchanger coupled with the resistor cold plates, the core cold plate, the switch cold plate, and the tubing. The heat exchanger may also be coupled with a facility fluid supply. | 2021-11-11 |
| 20210351010 | PLASMA PROCESSING METHOD, PLASMA PROCESSING APPARATUS, AND CONTROL APPARATUS - A plasma processing method includes providing a plasma processing apparatus including a rotary table that is rotatably provided in a vacuum container and disposes a plurality of substrates on an upper surface along a circumferential direction, a gas supply source that supplies a plasma processing gas to at least one of a plurality of processing areas separated by a separation area in the circumferential direction of the rotary table, and an antenna that is provided to face the upper surface of the rotary table and generates plasma in the at least one processing area. The plasma processing method further includes disposing the plurality of substrates on the rotary table, and supplying the plasma processing gas into the vacuum container and supplying a pulsed wave of RF power to the antenna while rotating the rotary table. | 2021-11-11 |
| 20210351011 | PLASMA PROCESSING SYSTEM, METHOD OF CONTROLLING PLASMA IN THE PLASMA PROCESSING SYSTEM, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE BY USING THE METHOD OF CONTROLLING THE PLASMA - A plasma processing system includes a radio-frequency (RF) power source unit configured to generate three RF powers; a process chamber to which a process gas supplied and to which the RF powers are applied to generate a plasma; and an impedance matcher between the RF power source unit and the process chamber, the impedance matcher configured to adjust an impedance. The RF power source unit may include a first RF power source connected to a first electrode located in a lower portion of the process chamber to apply a first RF power having a first frequency, a second RF power source connected to the first electrode and to apply a second RF power having a second frequency, and a third RF power source connected to a second electrode located in an upper portion of the process chamber and to apply a third RF power having a third frequency. | 2021-11-11 |
| 20210351012 | APPARATUS AND METHOD FOR PLASMA PROCESSING - A controller of a plasma processing apparatus stores a frequency spectrum related to a first timing into a storage unit, controls a microwave generator to generate a microwave in correspondence to a setting frequency, setting power, and a setting bandwidth at a second timing, controls a demodulator to measure travelling wave power and reflected wave power of the microwave for each frequency, calculates the frequency spectrum related to the second timing on the basis of a measurement result from the demodulator, calculates a correction value for correcting a waveform of the travelling wave power for each frequency such that a difference for each frequency between the frequency spectrum related to the second timing and the frequency spectrum related to the first timing, stored in the storage unit, is small, and controls the microwave generator on the basis of the calculated correction value for each frequency. | 2021-11-11 |
| 20210351013 | SiC COAT - A SiC coat having an outer surface including a back face, a front face opposite to the back face, a first side face extending in a direction from the back face toward the front face, and a first R-surface between the back face and the first side face, the SiC coat including: an overcoat configured to include a first upper layer side-face portion that forms the first side face and the first R-surface of the outer surface; and an undercoat configured to include a backface portion that forms the back face of the outer surface and a first lower layer side-face portion covered by the first upper layer side-face portion of the overcoat, wherein the first upper layer side-face portion and the backface portion form a first interface, and the first interface appears on the first R-surface of the outer surface. | 2021-11-11 |
| 20210351014 | L-MOTION SLIT DOOR FOR SUBSTRATE PROCESSING CHAMBER - Embodiments of process kits for use in a process chamber are provided herein. In some embodiments, a process kit includes a slit door having an arcuate profile and including a first plate coupled to a second plate, wherein the first plate is configured to be coupled to an actuator, and wherein the second plate has a processing volume facing surface that includes silicon. | 2021-11-11 |
| 20210351015 | NITRIDING APPARATUS AND NITRIDING METHOD - Provided are a nitriding apparatus and a method of nitriding, which are capable of suppressing generation of a compound layer by accurately measuring temperature of an object to be treated by nitriding. A nitriding apparatus includes a chamber, a gas supplying unit, a support, a plasma source, a heater, a thermocouple wire including a temperature measuring section, an accommodating member, a power supply for an object to be treated, and a treatment condition control unit. The accommodating member internally accommodates the thermocouple wire to cover the temperature measuring section, while being insulated from the thermocouple wire. The power supply for an object to be treated applies a predetermined voltage to an object to be treated and the housing member so that the object to be treated and the accommodating member are set to an identical potential on the negative side. | 2021-11-11 |
| 20210351016 | SHIELD COOLING ASSEMBLY, REACTION CHAMBER AND SEMICONDUCTOR PROCESSING APPARATUS - A shield cooling assembly includes an adapter configured to fix a shield in the chamber. The adapter includes a first surface and a second surface facing an outer side surface of the shield and a bottom surface of a bottom wall of the shield, respectively. A predetermined gap is provided between the first surface and the outer side surface of the shield. The second surface is in contact with the bottom surface of the bottom wall of the shield. The adapter is provided with a cooling channel for transmitting a cooling medium to cool the shield. | 2021-11-11 |
| 20210351017 | VAPOR DEPOSITION BAFFLE MECHANISM AND VAPOR DEPOSITION APPARATUS - A vapor deposition baffle mechanism and a vapor deposition apparatus are provided. The vapor deposition baffle mechanism is disposed between a vapor deposition source and a substrate, and comprises a baffle component and a driving source. The vapor deposition aperture is configured to allow a substance evaporated from the vapor deposition source to pass through in a conical radiation manner and be deposited on a vapor deposition area of the substrate, and the driving source is configured to drive the baffle component to move upward to reduce the vapor deposition area of the substrate, or to drive the baffle component to move downward to enlarge the vapor deposition area of the substrate. | 2021-11-11 |
| 20210351018 | LOWER PLASMA EXCLUSION ZONE RING FOR BEVEL ETCHER - A substrate processing system for processing a substrate includes an upper plasma exclusion zone ring arranged above a substrate during plasma treatment of a bevel edge of the substrate. An upper electrode is arranged above the substrate during plasma treatment. A lower plasma exclusion zone ring is at least partially arranged below the substrate during the plasma treatment. A lower electrode is at least partially arranged below the substrate during plasma treatment. The lower plasma exclusion zone ring includes an annular body with a lower portion at least partially arranged below the substrate and an upwardly projecting flange extending upwardly from the lower portion of the annular body at a location spaced from a radially outer edge of the substrate. The upwardly projecting flange includes an uppermost surface extending to one of a middle portion of the substrate in a vertical direction and above the middle portion of the substrate. | 2021-11-11 |
| 20210351019 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A plasma processing method is provided. In the plasma processing method, plasma is generated inside a chamber. A DC voltage is applied to an edge ring disposed to surround a substrate while generating the plasma. A first voltage of the edge ring is acquired while applying the DC voltage. Then, the application of the DC voltage is stopped. A second voltage of the edge ring is acquired while stopping the application of the DC voltage. Then, a parameter for controlling the DC voltage is calculated based on the first voltage and the second voltage. | 2021-11-11 |
| 20210351020 | Remote Capacitively Coupled Plasma Source with Improved Ion Blocker - Apparatus and methods for generating a flow of radicals are provided. An ion blocker is positioned a distance from a faceplate of a remote plasma source. The ion blocker has openings to allow the plasma to flow through. The ion blocker is polarized relative to a showerhead positioned on an opposite side of the ion blocker so that there are substantially no plasma gas ions passing through the showerhead. | 2021-11-11 |
| 20210351021 | METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE - Methods and apparatus of controlling a temperature of components in a process chamber that is heated by a plasma or a heater and cooled by a coolant flow through a heat exchanger. An apparatus, for example, can include a chuck assembly and/or a plasma source including a respective cooling plate; a proportional bypass valve connected between the respective cooling plate and a heat exchanger; a temperature sensor configured to measure a temperature of the coolant through the outlet channel of the respective cooling plate; and a controller that receives a measured temperature from the temperature sensor measuring, and in response to receiving the measured temperature controls a rate of flow of the coolant through the first coolant output line and the second coolant output line of the proportional bypass valve. | 2021-11-11 |
| 20210351022 | Sputtering Cathode, Sputtering Cathode Assembly, and Sputtering Apparatus - The sputtering cathode has a tubular shape having a pair of long sides facing each other in cross-sectional shape, has a sputtering target whose erosion surface faces inward, and a magnetic circuit is provided along the sputtering target. The pair of long sides are constituted by rotary targets each having a cylindrical shape. The rotary target is internally provided with a magnetic circuit and configured to allow the flow of cooling water. The magnetic circuit is provided parallel to the central axis of the rotary target and has a rectangular cross-sectional shape having a long side perpendicular to the radial direction of the rotary target. | 2021-11-11 |
| 20210351023 | MAGNESIUM OXIDE SPUTTERING TARGET - A sputtering target configured from a magnesium oxide sintered body, wherein a ratio of crystal grains of the magnesium oxide sintered body in which a number of pinholes in a single crystal grain is 20 or more is 50% or less. The present invention is a sputtering target configured from a magnesium oxide sintered body in which the generation of particles during sputtering is less. | 2021-11-11 |
| 20210351024 | TILTED MAGNETRON IN A PVD SPUTTERING DEPOSITION CHAMBER - A chamber includes a target ( | 2021-11-11 |
| 20210351025 | RF Ion Trap Ion Loading Method - In one aspect, a method of processing ions in a mass spectrometer is disclosed, which comprises trapping a plurality of ions having different mass-to-charge (m/z) ratios in a collision cell, releasing said ions from the collision cell in a descending order in m/z ratio, and receiving the ions in a mass analyzer having a plurality of rods to at least one of which an RF voltage is applied, where the RF voltage is varied from a first value to a lower second value as the released ions are received by the mass analyzer. | 2021-11-11 |
| 20210351026 | ELECTRON BEAM THROTTLING FOR ELECTRON CAPTURE DISSOCIATION - In one aspect, an electron-ion reaction module, e.g., an electron capture dissociation module, for use in a mass spectrometer is disclosed, which comprises a chamber, an electron source for generating electrons and introducing the electrons into the chamber, a gate electrode positioned relative to the electron source and the chamber, and a DC voltage source operatively coupled to the gate electrode for applying control voltages to the gate electrode. The electron-ion interaction module can further include a controller operably coupled to the DC voltage source and configured for adjusting the DC voltage applied to the gate electrode to adjust flow of electrons into the chamber. | 2021-11-11 |
| 20210351027 | DIELECTRIC BARRIER DISCHARGE IONIZATION, ANALYTICAL INSTRUMENT AND IONIZATION METHOD - The present invention provides dielectric barrier discharge ionization, including a dielectric barrier discharge tube and an electrode pair consisting of a first electrode and a second electrode. At least a portion of the dielectric barrier discharge tube is provided between the first electrode and the second electrode. The electrode pair can ionize the sample after the power is turned on. The dielectric barrier discharge tube is in communication with a vacuum portion. The pressure range in the dielectric barrier discharge tube is 0.01 to 100 Pa. The dielectric barrier discharge ionization provided by the invention remedies the defects of existing low-pressure ion sources in the pressure range, and provides the low-pressure ion source with high ionization ability, high versatility and simple devices. | 2021-11-11 |
| 20210351028 | QUADRUPOLE MASS SPECTROMETER - A quadrupole mass spectrometer includes: a quadrupole mass filter with four rod electrodes arranged so as to surround a central axis; and a magnet that forms a magnetic field in at least a part of an inside of the quadrupole mass filter in a direction intersecting the central axis. | 2021-11-11 |
| 20210351029 | WAFER ANNEALING METHOD - The present disclosure provides a wafer annealing method, including: preparing a wafer, the wafer includes a plurality of regions concentrically disposed on the wafer; heating the plurality of regions, the heating process includes a plurality of heating stages, each of the heating stages has a different heating rate, temperatures of the plurality of regions vary in each of the heating stages; performing heat preservation on the plurality of regions; and cooling the plurality of regions through blowing nitrogen. The wafer annealing method can improve the electrical uniformity of the wafer. | 2021-11-11 |
| 20210351030 | STRUCTURE MANUFACTURING METHOD AND STRUCTURE MANUFACTURING DEVICE - A process of preparing a wafer having a diameter of two inches or more, at least a surface of the wafer being formed from a group III nitride crystal, including preparing an alkaline or acidic etching liquid containing a peroxodisulfate ion as an oxidizing agent that accepts an electron, accommodating the wafer such that the surface of the wafer is immersed in the etching liquid such that the surface of the wafer is parallel with a surface of the etching liquid; and radiating light from the surface side of the etching liquid onto the surface of the wafer without agitating the etching liquid. First and second etching areas disposed at an interval from each other are defined on the surface of the wafer. In the process of radiating the light onto the surface of the wafer, the light is radiated perpendicularly onto surfaces of the first and second etching areas. | 2021-11-11 |
| 20210351031 | SELECTIVE DEPOSITION USING HYDROPHOBIC PRECURSORS - Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO | 2021-11-11 |
| 20210351032 | Multi-Step Pre-Clean for Selective Metal Gap Fill - Methods for pre-cleaning substrates having metal and dielectric surfaces are described. The substrate is exposed to a strong reductant to remove contaminants from the metal surface and damage the dielectric surface. The substrate is then exposed to an oxidation process to repair the damage to the dielectric surface and oxidize the metal surface. The substrate is then exposed to a weak reductant to reduce the metal oxide to a pure metal surface without substantially affecting the dielectric surface. Processing tools and computer readable media for practicing the method are also described. | 2021-11-11 |
| 20210351033 | EPITAXIAL GROWTH TEMPLATE USING CARBON BUFFER ON SUBLIMATED SIC SUBSTRATE - Apparatus, systems, and methods for forming semiconductor materials (e.g., using nanofabrication) are generally described. In one example, a method comprises formation of a carbon buffer layer on a first substrate and a graphene layer on the carbon buffer layer by silicon sublimation, followed by removing the graphene layer so as to expose the carbon buffer layer and form a fabrication platform. | 2021-11-11 |
| 20210351034 | Using A Self-Assembly Layer To Facilitate Selective Formation of An Etching Stop Layer - A structure is provided that includes a first conductive component and a first interlayer dielectric (ILD) that surrounds the first conductive component. A self-assembly layer is formed on the first conductive component but not on the first ILD. A first dielectric layer is formed over the first ILD but not over the first conductive component. A second ILD is formed over the first conductive component and over the first ILD. An opening is etched in the second ILD. The opening is at least partially aligned with the first conductive component. The first dielectric layer protects portions of the first ILD located therebelow from being etched. The opening is filled with a conductive material to form a second conductive component in the opening. | 2021-11-11 |
| 20210351035 | Selective Deposition Of Silicon Using Deposition-Treat-Etch Process - Methods for selective silicon film deposition on a substrate comprising a first surface and a second surface are described. More specifically, the process of depositing a film, treating the film to change some film property and selectively etching the film from various surfaces of the substrate are described. The deposition, treatment and etching can be repeated to selectively deposit a film on one of the two substrate surfaces. | 2021-11-11 |
| 20210351036 | SEMICONDUCTOR PATTERNING PROCESS - A semiconductor patterning process includes the following steps. A substrate is provided, wherein the substrate has a first region, a second region, and a third region, and the second region is located between the first region and the third region. A plurality of initial mask patterns are formed on the substrate. A first mask material layer is conformally formed on the substrate. A first mask pattern is formed above at least two adjacent initial mask patterns in the second region and on the first mask material layer in between, and a second mask pattern is formed on the first mask material layer on sidewalls of remaining initial mask patterns. A portion of the first mask material layer is removed using the first mask pattern and the second mask pattern as a mask to form a final mask pattern on the substrate. | 2021-11-11 |
| 20210351037 | METHOD FOR PRODUCING A SEMICONDUCTOR COMPONENT COMPRISING PERFORMING A PLASMA TREATMENT, AND SEMICONDUCTOR COMPONENT - The invention relates to a method for producing a semiconductor component comprising performing a plasma treatment of an exposed surface of a semiconductor material with halogens, and carrying out a diffusion method with dopants on the exposed surface. | 2021-11-11 |
| 20210351038 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device includes first and second FETs including first and second channel regions, respectively. The first and second FETs include first and second gate structures, respectively. The first and second gate structures include first and second gate dielectric layers formed over the first and second channel regions and first and second gate electrode layers formed over the first and second gate dielectric layers. The first and second gate structures are aligned along a first direction. The first gate structure and the second gate structure are separated by a separation plug made of an insulating material. The first gate electrode layer is in contact with a side wall of the separation plug. | 2021-11-11 |
| 20210351039 | Semiconductor Device and Method - An embodiment method includes: forming a gate stack over a channel region; growing a source/drain region adjacent the channel region; depositing a first ILD layer over the source/drain region and the gate stack; forming a source/drain contact through the first ILD layer to physically contact the source/drain region; forming a gate contact through the first ILD layer to physically contact the gate stack; performing an etching process to partially expose a first sidewall and a second sidewall, the first sidewall being at a first interface of the source/drain contact and the first ILD layer, the second sidewall being at a second interface of the gate contact and the first ILD layer; forming a first conductive feature physically contacting the first sidewall and a first top surface of the source/drain contact; and forming a second conductive feature physically contacting the second sidewall and a second top surface of the gate contact. | 2021-11-11 |
| 20210351040 | ETCHING METHOD - The etching method includes a modification process and a removal process. In the modification process, a fluorine containing gas is supplied to an object having a silicon oxide film, so that a modification layer is formed on the surface of the silicon oxide film. In the removal process, the object, on which the modification layer has been formed, is exposed to plasma of a gas that contains ammonia, so that the modification layer is removed from the object. In addition, the modification process and the removal process are alternately repeated a plurality of times. | 2021-11-11 |
| 20210351041 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES AND SEMICONDUCTOR DEVICES - In a method of manufacturing a semiconductor device, a gate dielectric layer is formed over a channel region, a first conductive layer is formed over the gate dielectric layer, a protective layer is formed at a surface region of the first conductive layer, a metallic layer is formed by applying a metal containing gas on the protective layer, and the metallic layer is removed by a wet etching operation using a solution. The protective layer is resistant to the solution of the wet etching operation. | 2021-11-11 |
| 20210351042 | SEMICONDUCTOR PACKAGE AND FORMATION METHOD THEREOF - A semiconductor package and a method of forming the semiconductor package are provided. The method includes providing a first substrate, forming a wiring structure containing at least two first wiring layers, disposing a first insulating layer between adjacent two first wiring layers, and patterning the first insulating layer to form a plurality of first through-holes. The adjacent two first wiring layers are electrically connected to each other through the plurality of first through-holes. The method also includes providing at least one semiconductor element each including a plurality of pins. In addition, the method includes disposing the plurality of pins of the each semiconductor element on a side of the wiring structure away from the first substrate. Further, the method includes encapsulating the at least one semiconductor element, and placing a ball on a side of the wiring structure away from the at least one semiconductor element. | 2021-11-11 |
| 20210351043 | Method and Apparatus of Processor Wafer Bonding for Wafer-Scale Integrated Supercomputer - A method and apparatus for bonding a processor wafer with a microchannel wafer/glass manifold to form a bonded wafer structure are provided. A glass fixture is also provided for protecting C4 solder bumps on chips disposed on the processor wafer. When the glass fixture is positioned on the processor wafer, posts extending from the glass fixture contact corresponding regions on the processor wafer devoid of C4 solder bumps, so that the glass fixture protects the C4 solder bumps during wafer bonding. The method involves positioning the processor wafer/glass fixture and the microchannel wafer/glass manifold in a metal fixture having one or more alignment structures adapted to engage corresponding alignment elements formed in the processor wafer, glass fixture and/or glass manifold. The metal fixture secures the wafer components in place and, after melting solder pellets disposed between the processor wafer/glass fixture and microchannel wafer/glass manifold, a bonded wafer structure is formed. | 2021-11-11 |
| 20210351044 | SEMICONDUCTOR PACKAGING STRUCTURE AND METHOD FOR PACKAGING SEMICONDUCTOR DEVICE - A method for packaging a semiconductor device includes the steps of: disposing a wafer on a first carrier plate; attaching a second carrier plate to a side of the first carrier plate opposite to the wafer; disposing a chip unit on a side of the wafer opposite to the first carrier plate; and covering the wafer and the chip unit with an encapsulation layer. A semiconductor packaging structure is also disclosed. | 2021-11-11 |
| 20210351045 | RESIN MOLDING APPARATUS AND CLEANING METHOD - A resin molding apparatus and a cleaning method of a workpiece which can prevent a workpiece from being carried into a mold die in a state where particles (dust) are adhered to the workpiece, and can prevent deterioration of molding quality. A resin molding apparatus according to the present invention, in which a workpiece with an electronic component mounted on a carrier and a mold resin are carried into a mold die, includes: a press part having the mold die for clamping and resin-sealing the workpiece and the mold resin; and a cleaning apparatus for cleaning a back surface of the workpiece conveyed to the press part, wherein the electronic component is not mounted on the back surface. The cleaning apparatus is arranged at a position overlapping a conveyance path of the workpiece on the upstream side of the press part. | 2021-11-11 |
| 20210351046 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD - A semiconductor manufacturing apparatus includes a chuck stage, a scrubber nozzle, a scrubber nozzle scan mechanism, a stage rotation mechanism, and a holding stage including a holding fluid nozzle and a top plate, the top plate having one main surface facing an opposite surface of a wafer, and the holding fluid nozzle being disposed adjacent to a center rather than a periphery portion of the top plate. A holding fluid discharged from the holding fluid nozzle is caused to flow through an area between the opposite surface of the wafer and the one main surface of the top plate to produce holding force, and the holding force causes the opposite surface to hold pressure applied to a processing surface of the wafer by a scrubbing fluid discharged from the scrubber nozzle. | 2021-11-11 |
| 20210351047 | CLEANING SOLUTION PRODUCTION SYSTEMS AND METHODS, AND PLASMA REACTION TANKS - A cleaning solution production system is for cleaning a semiconductor substrate. The system includes a pressure tank, a plasma reaction tank configured to form a plasma in gas bubbles suspended in a decompressed liquid obtained from the pressure tank to thereby generate radical species in the decompressed liquid, a storage tank configured to store a cleaning solution containing the radical species generated in the plasma reaction tank, and a nozzle configured to supply the cleaning solution from the storage tank to a semiconductor substrate. | 2021-11-11 |
