45th week of 2011 patent applcation highlights part 13 |
Patent application number | Title | Published |
20110272617 | Seat and Valve Systems for Use in Delayed Coker System - The present invention provides more efficient, cost effective coke drum valve devices and system as well as more efficient, cost effective methods for isolating the flow of matter in a delayed coker unit operation. Specifically, embodiments of the invention relate to various seat systems used in valves for delayed coking operations. | 2011-11-10 |
20110272618 | VALVE ARRANGEMENT WITH A BASE PART AND AN INSERT PART - A valve arrangement | 2011-11-10 |
20110272619 | PREPARATION FOR APPLICATION ONTO A CELLULOSIC FABRIC OR TEXTILE MATERIAL AND TEXTILE ARTICLES COMPRISING SAME - A preparation for application onto a cellulosic fabric or textile material includes a blended mixture of wool particles or wool powder, and a binding agent. The functional additive is carried by the wool particles. The wool particles or wool powder is preferably of macrofibril size or below. Such a preparation exhibits exceptional functional additive-carrying and retention ability which enhances the durability of functional enhancements of a cellulosic fabric material. In another embodiment, the preparation includes a mixture of powdered bamboo fibre, carrier agents, and binding agents. Preferably, the non-charcoal fibrous bamboo powder is nano-sized having an ultrafine particle size, e.g., 1 μm or below. Fabric materials treated with ultrafine bamboo fibre powder have good moisture management properties. | 2011-11-10 |
20110272620 | Physically Blown Polyethylene Foam - The invention is directed to a masterbatch comprising
| 2011-11-10 |
20110272621 | PROCESS FOR MANUFACTURING INSULATION PRODUCTS BASED ON MINERAL WOOL, AND PRODUCTS OBTAINED - The present invention relates to a process for manufacturing thermal and/or acoustic insulation products based on mineral wool, especially on rock wool or glass wool, bound by a sizing composition based on a thermosetting resin, in particular of resol type, which aims to limit the emissions of formaldehyde. | 2011-11-10 |
20110272622 | PROCESS FOR PRODUCING COMPOSITE MAGNETIC MATERIAL, DUST CORE FORMED FROM SAME, AND PROCESS FOR PRODUCING DUST CORE - A composite magnetic material is manufactured having magnetic properties that can excellently cope with the decreasing size and increasing electric current of magnetic elements, such as choke coils, and can be used in a high frequency range, a dust core using the composite magnetic material, and a method of manufacturing the same. The dust core includes magnetic metal powder and an insulating material, in which the magnetic metal powder has a Vickers hardness (Hv) of 230≦Hv≦1000, the insulating material has a compressive strength of 10000 kg/cm | 2011-11-10 |
20110272623 | FORMULATION OF HYDROPHOBIZED MAGNETITE - The present invention relates to a dispersion at least comprising particles comprising at least one magnetic iron oxide as component A and a solvent mixture as component B comprising (B1) 5% to 95% by weight of at least one water-miscible organic solvent LM as component B1 and (B2) 5% to 95% by weight of water as component B2, the sum of components B1 and B2 making 100% by weight, and to a method for producing a dispersion of this kind, comprising at least the steps (I) mixing particles comprising at least one magnetic iron oxide with at least one water-miscible organic solvent LM and water, (II) homogenizing the mixture from step (I), where a shearing energy of at least 2 kW/m | 2011-11-10 |
20110272624 | REFRIGERANT COMPOSITION - An improved refrigerant composition, or a kit for an improved refrigerant composition, for use in air conditioners comprising a refrigerant, wherein the refrigerant comprises a hydrofluorocarbon having a GWP of less than about 10 and an ODP of about zero, which is present at a concentration of at least about 50% by weight of the refrigerant composition; a lubricant wherein the lubricant is a polar, oxygenated lubricant; and an acid scavenger comprising a siloxane, an activated aromatic compound, or any mixtures thereof. | 2011-11-10 |
20110272625 | Surface cleaning and texturing process for crystalline solar cells - Methods for surface texturing a crystalline silicon substrate are provided. In one embodiment, the method includes providing a crystalline silicon substrate, wetting the substrate with an alkaline solution comprising a wetting agent, and forming a textured surface with a structure having a depth about 1 μm to about 10 μm on the substrate. In another embodiment, a method of performing a substrate texture process includes providing crystalline silicon substrate, pre-cleaning the substrate in a HF aqueous solution, wetting the substrate with a KOH aqueous solution comprising polyethylene glycol (PEG) compound, and forming a textured surface with a structure having a depth about 3 μm to about 8 μm on the substrate. | 2011-11-10 |
20110272626 | CHEMICAL METHOD AND COMPOSITION FOR SOIL IMPROVEMENT - A composition for chemical soil improvement includes a synthetic fluid or base oil, a pour point depressant, polyisobutylene, and synthetic fibers, and various combinations thereof. | 2011-11-10 |
20110272627 | CHEMICAL METHOD AND COMPOSITION FOR SOIL IMPROVEMENT - A composition for chemical soil improvement includes a synthetic fluid or base oil, a pour point depressant, polyisobutylene, and synthetic fibers, and various combinations thereof. | 2011-11-10 |
20110272628 | Preparation For Initiating Radical Reactions - A preparation, comprising a mixture of dibenzoyl peroxides where the mixture of dibenzoyl peroxides contains 50 to 99.7 mole % of a symmetric dibenzoyl peroxide and 0.3 to 50 mole % asymmetric dibenzoyl peroxides, shows a reduced decomposition temperature of the peroxides compared to the symmetric dibenzoyl peroxide and is suitable for hot cross-linking silicone rubber. The preparation can be produced by reacting a mixture containing a first benzoyl chloride and a second benzoyl chloride that is different therefrom with hydrogen peroxide, wherein the mixture of benzoyl chlorides contains 70 to 99.7 mole % of the first benzoyl chloride and 0.3 to 30 mole % of the second benzoyl chloride. | 2011-11-10 |
20110272629 | LYOTROPIC CHROMONIC LIQUID CRYSTAL COMPOSITION, METHOD FOR MANUFACTURE OF LYOTROPIC CHROMONIC LIQUID CRYSTAL COATING FILM, AND LYOTROPIC CHROMONIC LIQUID CRYSTAL COATING FILM MANUFACTURED THEREBY - The present invention relates to a lyotropic chromonic liquid crystal composition, a method for manufacturing a lyotropic chromonic liquid crystal coating film and a lyotropic chromonic liquid crystal coating film manufactured thereby. The lyotropic chromonic liquid crystal composition of the present invention includes chromonic liquid crystal compounds and monomers each having opposing acid-base properties. Use of the lyotropic chromonic liquid crystal composition in the formation of optical films leads to improvements in electrical and optical properties such as mechanical strength, an insulating characteristic and a refractive index. | 2011-11-10 |
20110272630 | LIQUID CRYSTAL COMPOUND HAVING NEGATIVE DIELECTRIC ANISOTROPY, LIQUID CRYSTAL COMPOSITION USING THIS AND LIQUID CRYSTAL DISPLAY DEVICE - The invention provides a liquid crystal compound having a suitable value of refractive index anisotropy, a suitable value of dielectric anisotropy, steep characteristics electro-optic characteristics, a wide temperature range of a nematic phase and an excellent compatibility with other liquid crystal compounds, and a liquid crystal compounds especially having a wide temperature range of a nematic phase. | 2011-11-10 |
20110272631 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - Described is a liquid crystal composition which satisfies at least one of such characteristics as high upper limit temperature of the nematic phase, low lower limit temperature of the nematic phase, low viscosity, adequate optical anisotropy, large negative dielectric anisotropy, high resistivity, high stability to ultraviolet light and high stability to heat, or which has an adequate balance between at least two of the above-mentioned characteristics. Also described is an AM element having a short response time, high voltage holding ratio, high contrast ratio, long life and the like. The liquid crystal composition contains a specific compound having a large negative dielectric anisotropy and a low lower limit temperature as a first component, a specific compound having a low viscosity or a high upper limit temperature as a second component, and a specific compound having a polymerizable group as a third component. The AM element contains the composition. | 2011-11-10 |
20110272632 | CERIUM AND/OR TERBIUM PHOSPHATE OPTIONALLY WITH LANTHANUM, PHOSPHOR RESULTING FROM SAID PHOSPHATE AND METHODS FOR PREPARING SAME - A rare earth (Ln) phosphate is described, wherein Ln is either: (1) at least one rare earth selected from cerium and terbium, or (2) lanthanum in combination with at least one of the two above-mentioned rare earths, and wherein the phosphate has a crystalline structure of the monazite type with a potassium content of at most 6000 ppm. The phosphate can be obtained by the precipitation of a rare earth chloride at a constant pH lower than 2, by calcination at a temperature of at least 700° C. and by redispersion in hot water. A phosphor obtained by calcination of said phosphate at at least 1000° C. is also described. | 2011-11-10 |
20110272633 | CERIUM AND/OR TERBIUM PHOSPHATE OPTIONALLY WITH LANTHANUM, PHOSPHOR RESULTING FROM SAID PHOSPHATE AND METHODS FOR PREPARING SAME - A rare earth (Ln) phosphate is described, wherein Ln is either: ( | 2011-11-10 |
20110272634 | CERIUM AND/OR TERBIUM PHOSPHATE OPTIONALLY WITH LANTHANUM, PHOSPHOR RESULTING FROM SAID PHOSPHATE AND METHODS FOR MAKING SAME - A rare earth element phosphate (Ln) is described, wherein Ln is either: (1) at least one rare earth element selected from cerium and terbium, or (2) lanthanum in combination with at least one of the above two rare earth elements, and wherein the phosphate has a crystalline structure either of the rhabdophane type with a sodium content of at most 6000 ppm, or of the monazite type with a sodium content of at most 4000 ppm. The phosphate can be obtained by the precipitation of a rare earth element chloride at a constant pH lower than 2, and then calcining and redispersing the same in hot water. A phosphor obtained by calcining the phosphate at at least 1000° C. is also described. | 2011-11-10 |
20110272635 | CERIUM AND/OR TERBIUM PHOSPHATE, OPTIONALLY WITH LANTHANUM, PHOSPHOR RESULTING FROM SAID PHOSPHATE AND METHODS FOR PREPARING SAME - A rare earth element phosphate (Ln) is described, wherein Ln is either: (1) at least one rare earth element selected from cerium and terbium, or (2) lanthanum in combination with at least one of the above two rare earth elements, and wherein the phosphate has a crystalline structure of the rhabdophane type or of the monazite type with a lithium content of at most 300 ppm. The phosphate is obtained by the precipitation of a rare earth element chloride at a constant pH lower than 2, and then calcining and redispersing the same in hot water. A phosphor obtained by calcining the phosphate at at least 1000° C. is also described. | 2011-11-10 |
20110272636 | Method and System for Continuously Pumping a Solid Material and Method and System for Hydrogen Formation - A method of continuously providing a pressurized slurry of a solid material and liquid carbon dioxide is disclosed. The method comprises mixing particles of the solid material and particles of solid carbon dioxide in a mixing container and feeding the mixture of the solid material and the solid carbon dioxide to a pump to form a slurry of the solid material and liquified carbon dioxide. Within the pump, the solid carbon dioxide sublimates, forming a gaseous carbon dioxide which subsequently liquefies due to an increase in pressure. The liquid carbon dioxide and the solid material then mix to form the slurry of the solid material and the liquid carbon dioxide. In some embodiments, the pressurized slurry may be used for pipeline transportation of the solid material. A system of producing a continuous pressurized slurry of solid material and liquid carbon dioxide is also disclosed. A method of producing hydrogen is also disclosed. | 2011-11-10 |
20110272637 | Method for Producing a Gaseous Atmosphere for Treating Metals - The invention relates to a method for generating an atmosphere for heat treating metal parts in a furnace, which includes inserting, in at least one phase of the treatment cycle or at least one area of the heat treatment furnace, a mixture comprising gaseous CO | 2011-11-10 |
20110272638 | FLUORINE INSOLUBILIZERS AND METHODS OF PRODUCING SAME - A fluorine insolubilizer capable of sufficiently insolubilizing fluorine within a short time contains calcium hydrogen phosphate dihydrate in an amount of 95-40 mass % and apatite hydroxide in an amount of 5-60 mass % for a total of 100 mass %. | 2011-11-10 |
20110272639 | SYNTHESIS OF LITHIUM-METAL-PHOSPHATES UNDER HYDROTHERMAL CONDITIONS - The present invention relates to a process for the preparation of compounds of general formula (I) Li | 2011-11-10 |
20110272640 | METHOD OF INCORPORATING AN ADDITIVE INTO A POLYAMIDE-POLY(ARYLENE ETHER) COMPOSITION, COMPOSITION PREPARED THEREBY, AND ARTICLE COMPRISING THE COMPOSITION - A method of incorporating an additive into a polyamide-poly(arylene ether) composition includes the step of melt blending a polyamide, a poly(arylene ether), and a dispersion comprising a liquid carrier, an unmodified clay, and an additive. Using the dispersion rather than a polymer-based additive masterbatch saves energy. Like a polymer-based masterbatch, the dispersion provides the additive in a diluted form and therefore preserves the masterbatch's advantages of providing more uniform distribution additive in the plastic and avoiding direct handling of additives in the final compounding step. | 2011-11-10 |
20110272641 | METHOD OF INCORPORATING AN ADDITIVE INTO A POLYMER COMPOSITION AND DISPERSION USED THEREIN - A method of incorporating an additive into a polymer composition includes the step of melt blending a polymer with a dispersion comprising a liquid carrier, an unmodified clay, and an additive. Using the dispersion rather than a polymer-based additive masterbatch saves energy. Like a polymer-based masterbatch, the dispersion provides the additive in a diluted form and therefore preserves the masterbatch's advantages of providing more uniform distribution additive in the plastic and avoiding direct handling of additives in the final compounding step. The dispersion is also described. | 2011-11-10 |
20110272642 | COMPOSITION CONTAINING FINE SILVER PARTICLES, PRODUCTION METHOD THEREOF, METHOD FOR PRODUCING FINE SILVER PARTICLES, AND PASTE HAVING FINE SILVER PARTICLES - A composition containing fine silver particles which have a uniform particle size, can form a fine drawing pattern, and have a small environmental impact, a method for producing that composition, a method for producing fine silver particles, and a paste having fine silver particles are provided. | 2011-11-10 |
20110272643 | ORGANIC ANTI-REFLECTIVE LAYER COMPOSITION CONTAINING RING-OPENED PHTHALIC ANHYDRIDE AND METHOD FOR PREPARATION THEREOF - A light absorbent for forming an organic anti-reflective layer, represented by the following formula 1 or formula 2, is provided: | 2011-11-10 |
20110272644 | Fluidic devices comprising photocontrollable units - Photochromic materials that are useful for a variety of applications, including for making various unit functions of fluidic devices, particularly microfluidic devices, such as microchannels, valves and gates, using spiropyran materials, such as a polymeric composition comprising a spiropyran. In certain disclosed embodiments the spiropyran is admixed with a polymeric material. For example, the spiropyran may be intercalated into a polyalkylene or polyalkylene phthalate. The spiropyran also may be polymerized with at least one additional monomer to form a heteropolymer, such as by polymerization with styrene, styrene derivatives, acrylate and acrylate derivatives. The spiropyran compositions can be used to make, for example, a photoactuatable valve, a fluidic channel, etc. The valve may be associated with a microchannel, including photochromic microchannel. In certain disclosed embodiments, the valve, at least one microchannel, or both, are re-patternable by light exposure. Embodiments of a method for using a photochromic material in a microfluidic device also are disclosed. One disclosed embodiment concerns providing a microfluidic device comprising at least one re-patternable microchannel defined by a spiropyran photochromic material, at least one photoactuatable valve comprising the same or a different spiropyran photochromic material, or both. Spiropyran photochromic material is serially exposed to light of different wavelengths to move a fluid, to actuate a gate or valve, or both. | 2011-11-10 |
20110272645 | UV-ABSORBERS FOR OPHTHALMIC LENS MATERIALS - Dihydroxybenzotriazole UV absorbing compounds that are particularly useful in ophthalmic devices are disclosed. | 2011-11-10 |
20110272646 | POLYMER COMPOSITIONS WITH HEAT-ABSORBING PROPERTIES AND A HIGH STABILITY - The present invention relates to a composition comprising at least one transparent thermoplastic material; at least one inorganic IR absorber which comprises a zinc-doped caesium tungstate; and optionally at least one stabilizer which is based on phosphine. The present invention also relates to a composition which comprises a thermoplastic polymer material, an inorganic IR absorber, at least one phosphine stabilizer, at least one phosphite stabilizer, and at least one phenolic antioxidant stabilizer. | 2011-11-10 |
20110272647 | STABILIZER COMBINATIONS - The present invention relates to a stabilizer combination for stabilizing IR absorbers, comprising a) at least one stabilizer based on phosphine, b) at least one stabilizer based on phosphite, and c) at least one phenolic antioxidant stabilizer. | 2011-11-10 |
20110272648 | ULTRAVIOLET ABSORBER COMPOSITION WITH IMPROVED HEAT RESISTANCE AND SYNTHETIC RESIN COMPOSITION CONTAINING THE SAME - A synthetic resin composition is obtained by mixing, to 100 parts by mass of a synthetic resin, 0.001-10 parts by mass of a triazine-based compound represented by general formula (1), 0.001-10 parts by mass of a diaryl pentaerythritol diphosphite compound represented by general formula (2), and/or 0.001-10 parts by mass of an organic cyclic phosphite compound represented by general formula (3), and/or 0.001-10 parts by mass of a hindered phenolic compound represented by general formula (4). (In formula (1), R1 represents an alkyl group having 1-12 carbon atoms, R2 represents an alkyl group having 1-8 carbon atoms, R3 represents a hydroxy group, and R4 represents —O—R1. In formula (2), R5 represents an alkyl group having 1-4 carbon atoms. In formula (3), R5 and R8 represent an alkyl group having 1-4 carbon atoms, and R7 represents an alkyl group having 1-18 carbon atoms. In formula (4), R9 represents a residue obtained by removing n hydroxyl groups from a monovalent to tetravalent alcohol, and n represents an integer 1-4.) | 2011-11-10 |
20110272649 | Portable lifting apparatus - A portable lifting apparatus includes a base having a portability system rendering the apparatus movable along a surface; a lift arm connected to the base; a deck to support an object, and being moveably engaged with the lift arm via a lifting system that is adapted to lift the deck along a portion of the lift arm; and a hitch connector, connected to the deck, and adapted to hitch the apparatus to a vehicle hitch receiver. When the apparatus is not hitched, the lifting system can lift the object from a first position to a second position; and when the apparatus is hitched, the lifting system can lift the apparatus above the surface. | 2011-11-10 |
20110272650 | Lifting and Moving Device - A lifting and moving device for assisting a user in applying a force to an implement to move a load. In the practice of the invention, the user moves the load, at least in part, by leaning or shifting their weight. One embodiment of the device includes a bar having a first end and a second end. A bracket is pivotally attached to the bar. The bracket is capable of being coupled to the implement. The first end of the bar acts as a fulcrum for the implement. A strap is attached to the bar and also coupled to the user. Movement of the user, such as by leaning or shifting of their weight, places the strap under tension and provides a force for moving the load. The bar, the strap, the leg, and a foot plate form a four bar linkage that is combined with the Class 1 lever. | 2011-11-10 |
20110272651 | LIGHTED BULLNOSE TIP FOR FLEXIBLE RODS - A lighted tip for a flexible rod includes a tip body having proximal and distal ends, a mechanical connector at the proximal end, a rounded lens connected to the distal end, and a light source that emits light through the rounded lens. The lighted tip defines a transverse through hole to enable connection of a wire to the lighted tip. | 2011-11-10 |
20110272652 | TRENCHLESS DUCTING APPARATUS FRAME - An apparatus for moving an elongate component within or through a sidewall of a pit, including a frame, a lever arm pivotably attached to the frame and comprising a handle at a first end, a gripping arrangement pivotably attached to the lever arm at a second end at a gripping pivot point, allowing the gripping arrangement to pivot about the gripping pivot point to assume a first and a second installation position, wherein in a first installation position during use the gripping arrangement grips the elongate component as the lever arm pivots in a first direction and releases the elongate component as the lever arm pivots in a second, opposite, direction, and wherein in a second installation position during use the gripping arrangement releases the elongate component as the lever arm pivots in a first direction and grips the elongate component as the lever arm pivots in a second, opposite, direction. | 2011-11-10 |
20110272653 | PORTABLE WINCH ASSEMBLY - This invention relates to a portable winch assembly ( | 2011-11-10 |
20110272654 | LOW FRICTION ROPE GUARD AND EDGE PROTECTOR WITH RADIUS PROTECTION AND GUIDE RAILS - An edge protector for placement between an edge and a rope according to embodiments of the present invention includes an inner surface having a rope guide, the rope guide including a first guide rail, a second guide rail, and a rope travel path between the first and second guide rails along which the rope slides in a rope travel direction, and an outer surface comprising one or more edge engagement bands, the one or more edge engagement bands oriented substantially perpendicularly to the rope travel direction and configured to engage the edge to deter slippage of the edge protector with respect to the edge. | 2011-11-10 |
20110272655 | Hoist Apparatus - A screwable hoisting apparatus to aid in elevating objects is described. The apparatus is embedded into a tree with one hand while the tree climber is free to use his other hand to secure himself to the tree. A method for using the same is disclosed. | 2011-11-10 |
20110272656 | HOIST ROPE EQUALISER - A load equaliser for supporting a drag line bucket from first and second cables is disclosed. The load equalizer has a main body having a central portion and side portions providing respectively first and second clamps for clamping end portions of the first and second suspension cables. A rotatable mounting is provided in the suspension central portion of the main body. A link body is suspended below the main body and connected thereto through the rotatable mounting whereby freedom of relative rotational motion is provided at least about an axis substantially at right angles to the direction between the clamps. The rotatable mounting is in a zone extending substantially between the clamps. | 2011-11-10 |
20110272657 | PORTABLE APPARATUS AND METHOD FOR LIFTING A VEHICLE THAT COMPENSATES FOR LATERAL MOTION OF THE VEHICLE - A lift apparatus for lifting a structure includes a base, a bell crank pivotably coupled to the base, a coupling member for engaging a portion of the structure, pivotably coupled to the bell crank device via at least one lift member, and a longeron assembly having a pivoting apex and configured to pivot about the base. The apparatus also includes a biasing device having a first end pivotably coupled to the bell crank device for applying a force thereto, the bell crank device converting the first force to a second force and applying the second force to the coupling member via the lift member for lifting the structure. A movement of the structure is compensated by rotation of portions of the longeron assembly which repositions the apex, the bell crank, and lift arm to maintain the structure in the lifted position. | 2011-11-10 |
20110272658 | PIVOTING FENCING APPARATUS AND FENCING SYSTEM - A fencing apparatus for preventing animals from climbing over a fence, which includes a plurality of first and corresponding second elongated members, is provided. Each of the first and second elongated members pivot relative to each other from a first stationary position to a second variable position. A flexible plastic netting is connected to and extends across the plurality of first and second elongated members. When connected to a vertically extending fence, the fencing apparatus extends from the vertically extending fence such that the second elongated member pivots downwardly upon being subject to a load e.g., by the weight of a climbing animal. | 2011-11-10 |
20110272659 | Apparatus for Forming Temporary Guardrails on Stairs - An apparatus for use in erecting a temporary guardrail on a stair, having a stair stringer. The apparatus has an elongated stanchion. A first jaw assembly is operatively attached to the stanchion for engaging one side of the stringer, proximal the bottom edge thereof, and includes a first compression assembly to operatively urge the stanchion against the stringer. A second axially spaced, jaw assembly is operatively attached to the stanchion for engaging the one side of the stringer proximal a top edge thereof, and includes a second compression assembly to urge the stanchion against the stringer, and a bracket attached to the stanchion, and being adapted to receive a temporary guardrail member. | 2011-11-10 |
20110272660 | RESISTIVE MEMORY AND METHODS OF PROCESSING RESISTIVE MEMORY - Resistive memory and methods of processing resistive memory are described herein. One or more method embodiments of processing resistive memory include forming a resistive memory cell material on an electrode having an access device contact, and forming a heater electrode on the resistive memory cell material after forming the resistive memory cell material on the electrode such that the heater electrode is self-aligned to the resistive memory cell material. | 2011-11-10 |
20110272661 | RESISTIVE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - Provided are a resistive memory device and a method of fabricating the same. The resistive memory device comprises an electron channel layer formed by means of a swelling process and an annealing process. Thus, conductive nanoparticles are uniformly dispersed in the electron channel layer to improve reliability of the resistive memory device. According to the method, an electron channel layer is formed by means of a printing process, a swelling process, and an annealing process. Thus, fabrication time is reduced. | 2011-11-10 |
20110272662 | Forced Ion Migration for Chalcogenide Phase Change Memory Device - Non-volatile memory devices with two stacked layers of chalcogenide materials comprising the active memory device have been investigated for their potential as phase-change memories. The devices tested included GeTe/SnTe, Ge | 2011-11-10 |
20110272663 | NONVOLATILE MEMORY DEVICE USING VARIABLE RESISTIVE ELEMENT - A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions. | 2011-11-10 |
20110272664 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device comprises a semiconductor substrate; a multilevel wiring layer structure on the semiconductor substrate; and a variable resistance element in the multilevel wiring layer structure, wherein the variable resistance element comprises a variable resistance element film whose resistance changes between a top electrode and a bottom electrode, wherein the multilevel wiring layer structure comprises at least a wiring electrically connected to the bottom electrode and a plug electrically connected to the top electrode, and wherein the wiring also serves as the bottom electrode. | 2011-11-10 |
20110272665 | Nitride semiconductor device - An inventive nitride semiconductor device includes: a substrate; a first buffer layer provided on the substrate, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; a second buffer layer provided on the first buffer layer in contact with the first buffer layer, and having a superlattice structure which includes two types of Group III nitride semiconductor sublayers having different compositions and alternately stacked in pairs; and a device operation layer of a Group III nitride semiconductor provided on the second buffer layer; wherein an average lattice constant LC | 2011-11-10 |
20110272666 | LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode comprises a light-emitting diode chip having a first semiconductor layer, a first electrode, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer and a second electrode formed on the second semiconductor layer. The first semiconductor layer, the active layer, the second semiconductor layer and the second electrode sequentially compose a stacked multilayer. A blind hole penetrates the second electrode, the second semiconductor layer, the active layer and inside the first semiconductor layer. The first electrode is disposed on the first semiconductor layer inside the blind hole. A first supporting layer and a second supporting layer are respectively disposed on the first electrode and the second electrode, wherein the first supporting layer and the second supporting layer are separated from each other. A method for manufacturing the light-emitting diode is also provided in the disclosure. | 2011-11-10 |
20110272667 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes: a first cladding layer made of a first conductivity type group III nitride semiconductor; an active layer formed on the first cladding layer; a quantum well electron barrier layer which is formed on the active layer, and includes electron trapping barrier layers made of Al | 2011-11-10 |
20110272668 | NANOPARTICLES - The present application provides a light-emissive nitride nanoparticle, for example a nanocrystal, having a photoluminescence quantum yield of at least 1%. This quantum yield is significantly greater than for prior nitride nanoparticles, which have been only weakly emissive and have had poor control over the size of the nanoparticles produced. The nanoparticle includes at least one capping agent provided on a surface of the nitride crystal and containing an electron-accepting group for passivating nitrogen atoms at the surface of the crystal. The invention also provides non-emissive nitride nanoparticles. | 2011-11-10 |
20110272669 | PLASMONIC LIGHT EMITTING DIODE - A light emitting diode ( | 2011-11-10 |
20110272670 | NITRIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREOF - A nitride semiconductor device according to the present invention includes a p-type nitride semiconductor layer, an n-type nitride semiconductor layer, and an active layer interposed between the p-type nitride semiconductor layer and the n-type nitride semiconductor layer. The p-type nitride semiconductor layer includes: a first p-type nitride semiconductor layer containing Al and Mg; and a second p-type nitride semiconductor layer containing Mg. The first p-type nitride semiconductor layer is located between the active layer and the second p-type nitride semiconductor layer, and the second p-type nitride semiconductor layer has a greater band gap than a band gap of the first p-type nitride semiconductor layer. | 2011-11-10 |
20110272671 | SEMICONDUCTOR DEVICE AND A METHOD OF FABRICATING A SEMICONDUCTOR DEVICE - A semiconductor device comprising a quantum dot and a plurality of layers, wherein said plurality of layers comprises: a first layer; a stressor layer; and a patterned layer wherein said stressor layer overlies said first layer and said patterned layer overlies said stressor layer; wherein said stressor layer has a substantially different lattice constant to said first layer and said patterned layer and has a pit provided in said layer; said quantum dot lying above said patterned layer aligned with said pit. | 2011-11-10 |
20110272672 | Long Wavelength Infrared Superlattice - An embodiment of the present invention improves the fabrication and operational characteristics of a type-II superlattice material. Layers of indium arsenide and gallium antimonide comprise the bulk of the superlattice structure. One or more layers of indium antimonide are added to unit cells of the superlattice to provide a further degree of freedom in the design for adjusting the effective bandgap energy of the superlattice. One or more layers of gallium arsenide are added to unit cells of the superlattice to counterbalance the crystal lattice strain forces introduced by the aforementioned indium antimonide layers. | 2011-11-10 |
20110272673 | DIRECTIONALLY ETCHED NANOWIRE FIELD EFFECT TRANSISTORS - A method for forming a nanowire field effect transistor (FET) device includes depositing a first semiconductor layer on a substrate wherein a surface of the semiconductor layer is parallel to {110} crystalline planes of the semiconductor layer, epitaxailly depositing a second semiconductor layer on the first semiconductor layer, etching the first semiconductor layer and the second semiconductor layer to define a nanowire channel portion that connects a source region pad to a drain region pad, the nanowire channel portion having sidewalls that are parallel to {100} crystalline planes, and the source region pad and the drain region pad having sidewalls that are parallel to {110} crystalline planes, and performing an anisotropic etch that removes primarily material from {100} crystalline planes of the first semiconductor layer such that the nanowire channel portion is suspended by the source region pad and the drain region pad. | 2011-11-10 |
20110272674 | ORGANIC THIN FILM DEVICES WITH STABILIZED THRESHOLD VOLTAGE AND MOBILITY, AND METHOD FOR PREPARING THE DEVICES - Organic thin film devices that included an organic thin film subjected to a selected dose of a selected energy of ions exhibited a stabilized mobility (μ) and threshold voltage (VT), a decrease in contact resistance R | 2011-11-10 |
20110272675 | Organic light emitting display device - A transparent organic light emitting display device having a uniform transmittance of external light and having uniformly formed transmissive windows in pixels. The device includes a substrate; pixels formed on the substrate, each of the pixels comprising: at least one light emitting region for emitting light; at least one transmissive region for transmitting external light; and at least one circuit region comprising a pixel circuit unit; an insulating layer covering the pixel circuit unit; pixel electrodes formed on the insulating layer in the light emitting region and the transmissive region of each pixel, and electrically connected to the pixel circuit unit; an organic layer formed on the pixel electrodes; and a facing electrode formed on the organic layer, integrally formed over all of the pixels, and having transmissive windows, wherein each of the transmissive windows corresponds to the transmissive region of each of the pixels. | 2011-11-10 |
20110272676 | BENZIMIDAZOLE COMPOUND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME, AND DISPLAY ELEMENT INCLUDING THE SAME - A benzimidazole compound, an organic photoelectric device, and a display element, the benzimidazole compound being represented by the following Chemical Formula 1: | 2011-11-10 |
20110272677 | ORGANIC EL DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - An organic EL display panel includes pixels and an interlayer insulation film on a thin film transistor layer. The interlayer insulation film includes contact holes which each correspond to one of the pixels. A bank is a grid that defines apertures. One of the contact holes is beneath each of the apertures. A first organic light-emitting layer is disposed in each of the apertures that corresponds to one of the pixels of a first color. A second organic light-emitting layer is disposed in each of the apertures that corresponds to one of the pixels of a second color. In each of the apertures in which one of the first and second organic light-emitting layers is disposed, a contact hole region is above the contact hole. A first-material layer comprising a same material as the first organic light-emitting layer and a second-material layer comprising a same material as the second organic light-emitting layer are superimposed in each contact hole region. | 2011-11-10 |
20110272678 | ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic electroluminescent device includes a pair of electrodes and a plurality of organic layers disposed between the electrodes, and one of the organic layers comprises an organic material forming the organic layers and a polymer obtained by polymerizing a polymerizable compound capable of exhibiting charge portability. | 2011-11-10 |
20110272679 | COMPOUND HAVING TRIAZOLE RING STRUCTURE TO WHICH PYRIDYL GROUP IS BONDED, AND ORGANIC ELECTROLUMINESCENT DEVICE - A host compound for a light emitting layer, which is excellent in electron transporting capability and hole blocking capability, has a high triplet excitation level and is capable of completely confining triplet excitons of a phosphorescent material, is provided as a material for an organic electroluminescent device having a high efficiency, and an organic electroluminescent device having a high efficiency and a high luminance is provided by using this compound. | 2011-11-10 |
20110272680 | ORGANIC ELECTROLUMINESCENT DEVICE - Disclosed is a useful organic EL device which comprises a phosphorescent light-emitting layer and is endowed with improved luminous efficiency and high driving stability. Also disclosed is a hole-transporting material suitable for use in the phosphorescent light-emitting device. The hole-transporting material is a triptycene derivative which has substituents at the 9- and 10-positions and is substituted with an aromatic group containing at least one diarylamino group (—ArNAr | 2011-11-10 |
20110272681 | LIGHT-EMITTING ELEMENT MATERIAL AND LIGHT-EMITTING ELEMENT - A light-emitting element has high luminous efficiency and excellent durability. The light-emitting element includes at least a light-emitting layer between a positive electrode and a negative electrode, and emits light by electrical energy. The light-emitting element is characterized by containing a naphthacene compound that has a specific structure and organic fluorescent substance that has a fluorescence peak wavelength of not less than 500 nm but not more than 690 nm. | 2011-11-10 |
20110272682 | Flexible Barrier Film, Method Of Forming Same, And Organic Electronic Device Including Same - A flexible barrier film has a thickness of from greater than zero to less than 5,000 nanometers and a water vapor transmission rate of no more than 1×10 | 2011-11-10 |
20110272683 | NOVEL BICHRYSENE COMPOUND AND ORGANIC LIGHT EMITTING DEVICE HAVING THE COMPOUND - Provided are a novel bichrysene compound and an organic light emitting device having high light emitting efficiency and excellent driving durability. The organic light emitting device includes an anode, a cathode, and a layer formed of an organic compound interposed between the anode and the cathode. The layer formed of an organic compound has a bichrysene compound represented by the following general formula (1). | 2011-11-10 |
20110272684 | MATERIALS FOR ORGANIC ELECTROLUMINESCENCE DEVICES - The present invention describes indenofluorene derivatives of the general formula I, II, III or IV having emitting and hole-transporting properties, in particular for use in the emission and/or charge-transport layer of electro-luminescent devices. The invention furthermore relates to a process for the preparation of the compounds according to the invention and to electronic devices comprising same. | 2011-11-10 |
20110272685 | MATERIALS FOR ORGANIC ELECTROLUMINESCENCE DEVICES - The present invention describes indenofluorene derivatives containing a heteroaromatic bridge atom as a novel class of materials having emitting and hole-transporting properties, in particular for use in the emission and/or charge-transport layer of electroluminescent devices. The invention furthermore relates to a process for the preparation of the compounds according to the invention and to electronic devices comprising same. | 2011-11-10 |
20110272686 | METAPHENYLENE POLYMER COMPOUND AND LIGHT EMITTING DEVICE USING THE SAME - A polymer compound comprising a constitutional unit represented by the following formula (2) and a constitutional unit represented by the following formula (1), | 2011-11-10 |
20110272687 | ORGANIC ELECTROLUMINESCENT ELEMENT, AND ILLUMINATION DEVICE AND DISPLAY DEVICE EACH COMPRISING THE ELEMENT - Provided is an o organic electroluminescence element comprising an anode, a cathode and a plurality of composing layers including a light emitting layer sandwiched between the anode and the cathode, wherein an electron transport layer containing the compound represented by Formula (1) is included in the composing layers; the light emitting layer contains a phosphorescence emitting organic metal complex; and the cathode or one composing layer adjacent to the cathode contains a metal or a metal compound belonging to Group 1 or Group 2 of the periodic table of elements, provided that the metal exhibits a standard electrode potential larger than −3 V vs. SHE in a system of the metal ion (M | 2011-11-10 |
20110272688 | ARYL-ARYL DENDRIMERS - Light emitting devices are described which incorporate, as the light emitting element, a dendrimer of which the constituent dendrons include a conjugated dendritic structure comprising aryl and/or heteroaryl groups connected to each other via bonds between sp | 2011-11-10 |
20110272689 | Optical touch panel and method of fabricating the same - An optical touch panel may be used remotely to control a large-sized display device. According to a method of fabricating the optical touch panel, an optical sensor transistor for sensing light and a switch transistor for drawing data can be formed together on the same substrate by using a relatively simple process. The optical touch panel may include an optical sensor transistor and a switch transistor. The optical sensor transistor may be configured to sense light and the switch transistor may be configured to draw data from the optical sensor transistor. The optical sensor transistor may include a light sensitive oxide semiconductor material as a channel layer. The switch transistor may include a non-light sensitive oxide semiconductor material as a channel layer. | 2011-11-10 |
20110272690 | Light Emitting Element and Light Emitting Device - A light emitting element of the invention includes n pieces of light emitting layers (n is a natural number) between first and second electrodes. A first layer and a second layer are provided between the m | 2011-11-10 |
20110272691 | Functional material for printed electronic components - The invention relates to a printable precursor comprising an organometallic aluminium, gallium, neodymium, ruthenium, magnesium, hafnium, zirconium, indium and/or tin complex or a mixture thereof which contains at least one ligand from the class of the oximates, for electronic components, and to a preparation process. The invention furthermore relates to corresponding printed electronic components, preferably field-effect transistors. | 2011-11-10 |
20110272692 | SIZE VARIABLE TYPE SEMICONDUCTOR CHIP AND SEMICONDUCTOR PACKAGE USING THE SAME - A size variable semiconductor chip includes a semiconductor chip area formed with a circuit layer and at least one cutting area extending parallel to at least one side of the semiconductor chip area. A plurality of scribe line parts and a plurality of active parts alternately formed with each other in the cutting area. | 2011-11-10 |
20110272693 | MANUFACTURING METHOD OF ULTRASONIC PROBE AND ULTRASONIC PROBE - The manufacturing yield of semiconductor devices (CMUTs) is improved. Before a polyimide film serving as a protective film is formed, a membrane is repeatedly vibrated to evaluate the breakdown voltage between an upper electrode and a lower electrode, and the upper electrode of a defective CMUT cell whose breakdown voltage between the upper electrode and the lower electrode is reduced due to the repeated vibrations of the membrane is removed in advance to cut off the electrical connection with other normal CMUT cells. By this means, in a block RB or a channel RCH including the recovered CMUT cell RC, reduction in the breakdown voltage between the upper electrode and the lower electrode after the repeated vibrations of the membrane is prevented. | 2011-11-10 |
20110272694 | INSULATING SUBSTRATE FOR SEMICONDUCTOR APPARATUS, SEMICONDUCTOR APPARATUS, AND METHOD FOR MANUFACTURING SEMICONDUCTOR APPARATUS - The present invention is intended to provide a glass substrate ( | 2011-11-10 |
20110272695 | PIXEL HAVING AN ORGANIC LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE PIXEL - A pixel having an organic light emitting diode (OLED) and method for fabricating the pixel is provided. A planarization dielectric layer is provided between a thin-film transistor (TFT) based backplane and OLED layers. A through via between the TFT backplane and the OLED layers forms a sidewall angle of less than 90 degrees to the TFT backplane. The via area and edges of an OLED bottom electrode pattern may be covered with a dielectric cap. | 2011-11-10 |
20110272696 | THIN FILM TRANSISTOR PANEL AND FABRICATING METHOD THEREOF - A thin film transistor panel includes a substrate, a light blocking layer on the substrate, a first protective film on the light blocking layer, a first electrode and a second electrode on the first protective film, an oxide semiconductor layer on a portion of the first protective film exposed between the first electrode and the second electrode, an insulating layer, a third electrode overlapping with the oxide semiconductor layer and on the insulating layer, and a fourth electrode on the insulating layer. The light blocking layer includes first sidewalls, and the first protective film includes second sidewalls. The first and the second sidewalls are disposed along substantially the same line. | 2011-11-10 |
20110272697 | ARRAY SUBSTRATE FOR REFLECTIVE TYPE OR TRANSFLECTIVE TYPE LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An array substrate for a liquid crystal display device includes a substrate, a gate line and a data line on the substrate and crossing each other to define a pixel region, a thin film transistor connected to the gate line and the data line, a first passivation layer on the thin film transistor and having a first unevenness structure at its top surface, an auxiliary unevenness layer on the first passivation layer and having a first roughness structure at its top surface, and a reflector on the auxiliary unevenness layer, the reflector having a second unevenness structure due to the first unevenness structure of the first passivation layer and a second roughness structure due to the first roughness structure of the auxiliary unevenness layer, the second roughness structure having smaller patterns than the second unevenness structure. | 2011-11-10 |
20110272698 | THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor array panel comprises a plurality of gate lines formed on an insulating substrate; a repair line formed on the insulating substrate; a gate insulating layer formed on the gate lines and the repair line; a plurality of data lines formed on the gate insulating layer; an electricity dissipation line formed on the gate insulating layer crossing the gate lines and the repair line; and a first diode connecting the repair line and the electricity dissipation line. When static electricity is introduced through the repair lines, the static electricity is transferred to the electricity dissipation line and is dispersed or exhausted before it reaches to the data lines. As a result, the TFTs and wires in the display area are prevented from being destroyed by the static electricity. | 2011-11-10 |
20110272699 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A gate electrode is formed by forming a first conductive layer containing aluminum as its main component over a substrate, forming a second conductive layer made from a material different from that used for forming the first conductive layer over the first conductive layer; and patterning the first conductive layer and the second conductive layer. Further, the first conductive layer includes one or more selected from carbon, chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel. And the second conductive layer includes one or more selected from chromium, tantalum, tungsten, molybdenum, titanium, silicon, and nickel, or nitride of these materials. | 2011-11-10 |
20110272700 | THIN FILM TRANSISTOR, ELECTRONIC DEVICE HAVING THE SAME, AND METHOD FOR MANUFACTURING THE SAME - An object of the present invention is to provide a method for manufacturing a thin film transistor which enables heat treatment aimed at improving characteristics of a gate insulating film such as lowering of an interface level or reduction in a fixed charge without causing a problem of misalignment in patterning due to expansion or shrinkage of glass. A method for manufacturing a thin film transistor of the present invention comprises the steps of heat-treating in a state where at least a gate insulating film is formed over a semiconductor film on which element isolation is not performed, simultaneously isolating the gate insulating film and the semiconductor film into an element structure, forming an insulating film covering a side face of an exposed semiconductor film, thereby preventing a short-circuit between the semiconductor film and a gate electrode. Expansion or shrinkage of a glass substrate during the heat treatment can be prevented from affecting misalignment in patterning since the gate insulating film and the semiconductor film are simultaneously processed into element shapes after the heat treatment. | 2011-11-10 |
20110272701 | THIN FILM TRANSISTOR, DISPLAY DEVICE HAVING THIN FILM TRANSISTOR, AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor with excellent electric characteristics, a display device having the thin film transistor, and a method for manufacturing the thin film transistor and the display device are proposed. The thin film transistor includes a gate insulating film formed over a gate electrode, a microcrystalline semiconductor film formed over the gate insulating film, a buffer layer formed over the microcrystalline semiconductor film, a pair of semiconductor films to which an impurity element imparting one conductivity type is added and which are formed over the buffer layer, and wirings formed over the pair of semiconductor films to which the impurity element imparting one conductivity type is added. A part of the gate insulating film or the entire gate insulating film, and/or a part of the microcrystalline semiconductor or the entire microcrystalline semiconductor includes an impurity element which serves as a donor. | 2011-11-10 |
20110272702 | ENHANCED CAPACITANCE DEEP TRENCH CAPACITOR FOR EDRAM - A substrate including a stack of a handle substrate, an optional lower insulator layer, a doped polycrystalline semiconductor layer, an upper insulator layer, and a top semiconductor layer is provided. A deep trench is formed through the top semiconductor layer, the upper insulator layer, and the doped polycrystalline semiconductor layer. Exposed vertical surfaces of the polycrystalline semiconductor layer are crystallographically etched to form random facets in the deep trench, thereby increasing the total exposed surface area of the polycrystalline semiconductor layer in the deep trench. A node dielectric and at least one conductive material are deposited to fill the trench and to form a buried strap portion, which constitute a capacitor of an eDRAM. Access transistors and other logic devices can be formed. | 2011-11-10 |
20110272703 | SEMICONDUCTOR DEVICE, LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are a semiconductor device, a light emitting device and a method for manufacturing the same. The semiconductor device includes a substrate, a plurality of rods disposed on the substrate, a plurality of particles disposed between the rods and on the substrate, and a first semiconductor layer disposed on the rods. The method for manufacturing the semiconductor device includes preparing a substrate, disposing a plurality of first particles on the substrate, and forming a plurality of rods by etching a portion of the substrate by using the first particles as an etch mask. The semiconductor device effectively reflects in an upward direction light by the above particles, so that light efficiency is improved. The rods are easily formed by using the first particles. | 2011-11-10 |
20110272704 | COMPOUND SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An AlN layer ( | 2011-11-10 |
20110272705 | Interdigitated Conductive Support for GaN Semiconductor Die - A GaN die having a plurality of parallel alternating and closely spaced source and drain strips is contacted by parallel coplanar comb-shaped fingers of source and drain pads. A plurality of enlarged area coplanar spaced gate pads having respective fingers contacting the gate contact of the die. The pads may be elements of a lead frame, or conductive areas on an insulation substrate. Other semiconductor die can be mounted on the pads and connected in predetermined circuit arrangements with the GaN die. | 2011-11-10 |
20110272706 | LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A light emitting diode and a method for fabricating the same are provided. The light emitting diode includes: a transparent substrate; a semiconductor material layer formed on the top surface of a substrate with an active layer generating light; and a fluorescent layer formed on the back surface of the substrate with controlled varied thicknesses. The ratio of light whose wavelength is shifted while propagating through the fluorescent layer and the original light generated in the active layer can be controlled by adjusting the thickness of the fluorescent layer, to emit desirable homogeneous white light from the light emitting diode. | 2011-11-10 |
20110272707 | SUBSTRATES AND METHODS OF FORMING FILM STRUCTURES TO FACILITATE SILICON CARBIDE EPITAXY - Embodiments of the invention relate generally to semiconductors and semiconductor fabrication techniques, and more particularly, to devices, integrated circuits, substrates, wafers and methods to form film structures to facilitate formation of silicon carbide epitaxy on a substrate, such as a silicon-based substrate. In some embodiments, a method of preparing a substrate for silicon carbide epitaxial layer formation can include forming an ultrathin layer of oxide that is configured to inhibit contaminants from interacting with a silicon-based substrate. Further, the method can include forming a carbonized film on the silicon-based substrate that is configured to inhibit contaminants from interacting with the silicon-based substrate. The carbonized film can be configured to be transitory as fabrication parameters are modified to form an epitaxial layer of silicon carbide. | 2011-11-10 |
20110272708 | NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment, a nitride semiconductor device includes a first, a second and a third semiconductor layer, a first and a second main electrode and a control electrode. The first layer made of a nitride semiconductor of a first conductivity type is provided on a substrate. The second layer made of a nitride semiconductor of a second conductivity type is provided on the first layer. The third layer made of a nitride semiconductor is provided on the second layer. The first electrode is electrically connected with the second layer. The second electrode is provided at a distance from the first electrode and electrically connected with the second layer. The control electrode is provided within a first trench via an insulating film. The first trench is disposed between the first and the second main electrodes, penetrates the third and the second layers, and reaches the first layer. | 2011-11-10 |
20110272709 | RADIATION HEATING EFFICIENCY BY INCREASING OPTICAL ABSORPTION OF A SILICON CONTAINING MATERIAL - Embodiments of the present invention generally provide a process and apparatus for increasing the absorption coefficient of a chamber component disposed in a thermal process chamber. In one embodiment, a method generally includes providing a substrate carrier having a first surface and a second surface, the first surface is configured to support a substrate and being parallel and opposite to the second surface, subjecting the second surface of the substrate carrier to a surface treatment process to roughen the second surface of the substrate carrier, wherein the substrate carrier contains a material comprising silicon carbide, and forming an oxide-containing layer on the roughened second surface of the substrate carrier. The formed oxide-containing layer has optical absorption properties at wavelengths close to the radiation delivered from one or more energy sources used to heat the chamber component. | 2011-11-10 |
20110272710 | Solid state energy photovoltaic device - A solid state energy conversion device and method of making is disclosed for converting energy between electromagnetic and electrical energy. The solid state energy conversion device comprises a wide bandgap semiconductor material having a first doped region. A thermal energy beam is directed onto the first doped region of the wide bandgap semiconductor material in the presence of a doping gas for converting a portion of the first doped region into a second doped region in the wide bandgap semiconductor material. A first and a second Ohmic contact are applied to the first and the second doped regions of the wide bandgap semiconductor material. In one embodiment, the solid state energy conversion device operates as a light emitting device to produce electromagnetic radiation upon the application of electrical power to the first and second Ohmic contacts. In another embodiment, the solid state energy conversion device operates as a photovoltaic device to produce electrical power between the first and second Ohmic contacts upon the application of electromagnetic radiation. | 2011-11-10 |
20110272711 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR APPARATUS - There is provided a method of manufacturing a semiconductor device, a semiconductor device, and a semiconductor apparatus, by which an electrode having an excellent ohmic property can be formed, and a semiconductor device having excellent device characteristics can be obtained with a high product yield. The method sequentially includes: a semiconductor device structure formation process in which a semiconductor device structure | 2011-11-10 |
20110272712 | Vertical light-emitting devices having patterned emitting unit and methods of manufacturing the same - Example embodiments are directed to a light-emitting device including a patterned emitting unit and a method of manufacturing the light-emitting device. The light-emitting device includes a first electrode on a top of a semiconductor layer, and a second electrode on a bottom of the semiconductor layer, wherein the semiconductor layer is a pattern array formed of a plurality of stacks. A space between the plurality of stacks is filled with an insulating layer, and the first electrode is on the insulating layer. | 2011-11-10 |
20110272713 | OPTOELECTRONIC COMPONENT - An optoelectronic component includes a connection carrier on which at least two radiation-emitting semiconductor chips are arranged, a conversion element fixed to the connection carrier, wherein the conversion element spans the semiconductor chips such that the semiconductor chips are surrounded by the conversion element and the connection carrier, and at least two of the radiation-emitting semiconductor chips differ from one another with regard to wavelengths of electromagnetic radiation they emit during operation, wherein the conversion element spans the semiconductor chips as a dome. | 2011-11-10 |
20110272714 | Organic light emitting diode display - An organic light emitting diode (OLED) display including a display substrate; a sealing member facing the display substrate; a sealant between the display substrate and the sealing member, the sealant cohering the display substrate and the sealing member; a plurality of conductive wires on the display substrate and overlapping the sealant; and a heat blocking film between the conductive wire and the sealant, the heat blocking film including a plurality of sub-heat blocking films. | 2011-11-10 |
20110272715 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light-emitting display device and a method of manufacturing the same are disclosed. The organic light-emitting display device includes: a substrate, a plurality of pixels on the substrate, a plurality of first electrodes, each disposed in each of the plurality of pixels, a pixel defining layer including a first pixel defining sub-layer disposed between each two adjacent first electrodes, and a second pixel defining sub-layer covering the first pixel defining sub-layer and surface edge portions of each two adjacent first electrodes, an intermediate layer disposed on each of the first electrodes and including an emission layer, and a second electrode configured to face the first electrodes. | 2011-11-10 |
20110272716 | LEAD FRAME FOR CHIP PACKAGE, CHIP PACKAGE, PACKAGE MODULE, AND ILLUMINATION APPARATUS INCLUDING CHIP PACKAGE MODULE - A lead frame for a chip package, a chip package, a package module, and an illumination apparatus including the chip package module. The chip package includes a first coupling portion and a second coupling portion that are coupled to each other on edges of a lead frame for mounting a chip thereon, and thus a package module is easily embodied by coupling the first coupling portion and the second coupling portion to each other. | 2011-11-10 |