44th week of 2014 patent applcation highlights part 17 |
Patent application number | Title | Published |
20140319421 | Photosensitive Resin Composition and Color Filter Using the Same - Disclosed are a photosensitive resin composition including a composite dye that includes a red fluorescent dye re-emitting light at a 400 to 800 nm fluorescent wavelength; and a metal complex dye including at least one metal ion selected from Mg, Ni, Co, Zn, Cr, Pt, and Pd, and a color filter using the same. | 2014-10-30 |
20140319422 | WAVELENGTH-SHIFT COMPOSITE LIGHT-STORING POWDER AND METHOD OF MANUFACTURING AND APPLYING THE SAME - A wavelength-shift composite light-storing powder and method of manufacturing and applying the same. Wherein, inorganic metal oxide and light-storing material containing rare earth elements are made to collide at high speed in an environment of extremely low temperature. The collision process makes said inorganic metal oxide to produce fusion reaction on surface of said light-storing material, that causes changes of lattice structure, to generate photon shift phenomenon and produce said wavelength-shift composite light-storing powder. Said composite light-storing powder is apt to engage cross-linked structure of thermoplastic polymer in a high temperature blending process, to achieve even distribution. Finally, through a filament process to produce successfully light-storing fibers capable of emitting lights of various wavelengths, to raise its heat resistance and wash durability. | 2014-10-30 |
20140319423 | SULFOLANE MIXTURES AS AMBIENT APROTIC POLAR SOLVENTS - An improved solvent containing sulfolane and at least one dialkyl sulfone, preferably dimethyl sulfone, wherein the improved solvent is a liquid at room temperature and can be used for reaction media and electrochemistry. | 2014-10-30 |
20140319424 | METHOD AND SYSTEM FOR PRODUCING A SYNTHESIS GAS USING AN OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM WITH SECONDARY REFORMING - A method and system for producing a synthesis gas in an oxygen transport membrane based reforming system is disclosed that carries out a primary reforming process, a secondary reforming process. | 2014-10-30 |
20140319425 | METHOD AND SYSTEM FOR PRODUCING A SYNTHESIS GAS IN AN OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM USING A COMBINED FEED STREAM - A method and system for producing a synthesis gas in an oxygen transport membrane based reforming system that utilizes a combined feed stream having a steam to carbon ratio between about 1.6 and 3.0 and a temperature between about 500° C. and 750° C. The combined feed stream is comprised a pre-reformed hydrocarbon feed, superheated steam, and a reaction product stream created by the reaction of a hydrogen containing stream reacted with the permeated oxygen at the permeate side of the oxygen transport membrane elements. | 2014-10-30 |
20140319426 | METHOD AND SYSTEM FOR PRODUCING A SYNTHESIS GAS IN AN OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM THAT IS FREE OF METAL DUSTING CORROSION - A method and system for producing a synthesis gas in an oxygen transport membrane based reforming system that utilizes a combined feed stream having a steam to carbon ratio between about 1.6 and 3.0 and a temperature between about 500° C. and 750° C. The combined feed stream is comprised a pre-reformed hydrocarbon feed, superheated steam, and a reaction product stream created by the reaction of a hydrogen containing stream reacted with the permeated oxygen at the permeate side of the oxygen transport membrane elements and wherein the oxygen transport membrane based reforming system and associated synthesis production process equipment are substantially free of carbon formation and metal dusting corrosion. | 2014-10-30 |
20140319427 | METHOD AND SYSTEM FOR PRODUCING A SYNTHESIS GAS IN AN OXYGEN TRANSPORT MEMBRANE BASED REFORMING SYSTEM WITH RECYCLING OF THE PRODUCED SYNTHESIS GAS - A method and system for producing a synthesis gas in an oxygen transport membrane based reforming system that utilizes a combined feed stream having a steam to carbon ratio between about 1.6 and 3.0 and a temperature between about 500° C. and 750° C. The combined feed stream is comprised a pre-reformed hydrocarbon feed, superheated steam, and a reaction product stream created by the reaction of a hydrogen containing stream reacted with the permeated oxygen at the permeate side of the oxygen transport membrane elements and wherein the hydrogen containing stream is a recycled portion of the synthesis gas. | 2014-10-30 |
20140319428 | SMALL MOLECULES AND THEIR USE AS ORGANIC SEMICONDUCTORS - The invention relates to novel compounds based on thieno[3,2-b]thiophene-2,5-dione and/or furo[3,2-b]furan-2,5-dione or their thioketone derivatives, methods for their preparation and intermediates used therein, mixtures and formulations containing them, the use of the compounds, mixtures and formulations as semiconductor in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising these compounds, mixtures or formulations. | 2014-10-30 |
20140319429 | METHOD FOR PREPARING A PASTE-LIKE COMPOSITION COMPRISING CARBON-BASED CONDUCTIVE FILLERS - A method for preparing a paste-like composition including carbon-based conductive fillers, at least one polymeric binder, at least one solvent, and at least one polymeric dispersant being different from the binder. Also, the paste that can result from said method, and to the uses thereof, in pure or diluted form, in particular for the manufacture of Li-ion batteries and supercapacitors. | 2014-10-30 |
20140319430 | PASTE COMPOSITE FOR FORMING ELECTRODE OF SOLAR CELL - Discussed is a paste composite for forming an electrode of a solar cell including a conductive powder, a glass frit, and an organic vehicle, wherein the conductive powder is present in an amount of 50 parts by weight or less, with respect to 100 parts by weight of the paste composite in total, and the conductive powder has a mean particle diameter of 0.3 μm to 1.0 μm. | 2014-10-30 |
20140319431 | ELECTRICALLY CONDUCTIVE PRINTABLE COMPOSITION - An electrically conductive printable composition comprises silver particles, a dispersing agent, a solvent, a first surfactant, comprising a hydrocarbon based surfactant, and a second surfactant, comprising a fluoro-based surfactant. | 2014-10-30 |
20140319432 | Wear-Resistant Nanocrystalline Hard Noble Metal Coating - A new class of electrically conductive, wear resistant, and high thermal stability nanocrystalline noble metal coatings achieved by codeposition of an insoluble, unreactive, and thermally stable, grain boundary segregated ceramic species that strengthens the base metal by inhibiting grain boundary mobility and recrystallization during deposition. These coatings exhibit high hardness and wear resistance while maintaining electrical conductivity effectively equivalent to that of the pure, fine-grained base metal. The coatings exhibit relatively low friction coefficients in nominally unlubricated sliding, and high thermal stability. The friction, wear, and electrical contact characteristics of these coatings are comparable or superior to electroplated hard gold films used extensively in electrical contact applications. The use of physical vapor deposition techniques such as electron beam evaporation provides an environmentally friendly alternative to electroplating for the synthesis of high performance hard gold films. | 2014-10-30 |
20140319433 | Preparation of Nanoparticle Material - A process for producing nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table is described. The process comprises effecting conversion of a nanoparticle precursor composition comprising said group 13, 16, and 11 or 12 ions to the material of the nanoparticles in the presence of a selenol compound. A process for fabricating a thin film comprising nanoparticles incorporating ions selected from groups 13, 16, and 11 or 12 of the periodic table is also described, as well as a process for producing a printable ink formulation comprising said nanoparticles. | 2014-10-30 |
20140319434 | Method for Forming a Vegetable Oil Having High Dielectric Purity - A dielectric high purity vegetable oil—free from antioxidants and/or external additives to be used in electric equipment such as transformers, as isolating element and as cooling means and a method for obtaining the same in which the dielectric high purity vegetable oil—is obtained by means of the optimization of the bleaching steps—and deodorizing—from the Refining process—known as Modified Caustic Refining Long-Mix (RBD). | 2014-10-30 |
20140319435 | High Purity Dielectric Vegetable Oil, and A Method for Obtaining the same and it's Use in Electric Apparatuses - A dielectric high purity vegetable oil—free from antioxidants and/or external additives to be used in electric equipment such as transformers, as isolating element and as cooling means and a method for obtaining the same in which the dielectric high purity vegetable oil—is obtained by means of the optimization of the bleaching steps—and deodorizing—from the Refining process—known as Modified Caustic Refining Long-Mix (RBD). | 2014-10-30 |
20140319436 | STRETCHED OPTICAL COMPENSATION FILM - The present invention provides a stretched optical compensation film which is a phase difference film comprising a cellulose-based resin and having excellent optical properties. | 2014-10-30 |
20140319437 | JACK APPARATUS - There is provided a jack apparatus having a base plate with a top surface, a bottom surface and a peripheral edge, the top surface having an opening, a bar extending from the top surface of the base plate, and a travelling member mounted to the bar. The travelling member has an actuator that moves the travelling member along the bar relative to the base plate and a lifting bracket mounted at an end of the travelling member, the lifting bracket having a top surface and a bottom surface, and the lifting bracket being sized to fit within the opening when the travelling member is adjacent to the base plate such that the lifting bracket engages the base plate. | 2014-10-30 |
20140319438 | TRANSPORT CART - Carts for lifting, transporting and lowering an item, such as a bucket. The carts are particularly suited for lifting, moving, and lowering 5-gallon buckets. The cart includes a lifting system that can raises and lowers the item by engaging its sidewalls. The lifting system includes an item engagement feature and a position adjustment system. | 2014-10-30 |
20140319439 | SOLAR ARRAY LIFTER AND METHOD - A solar array lifting assembly and method. The device and method use a support pole, a pole bracket for supporting a solar array made up of a frame and solar panels, a pole bracket securing mechanism for securing the pole bracket at a predetermined height, and a lifting assembly for lifting the pole bracket and solar array along the support pole. | 2014-10-30 |
20140319440 | ELECTRIC HOIST - An electric hoist with a brake motor having an output shaft oriented in the horizontal direction; a shaft located immediately below the output shaft of the brake motor and pivoting parallel to the output shaft; a chain sprocket affixed on the shaft and having a load chain wound thereon; gears provided on the output shaft side of the brake motor, the gears meshing with each other between the output shaft and one end of the shaft and transmitting the output of the brake motor to the shaft; and an upper hook provided above the brake motor and horizontally suspending the shaft with no load suspended, the shaft connected to the brake motor through the gears. The chain sprocket is provided on the shaft such that the portion of the chain sprocket on which the load chain is wound is located on the vertical line which passes through the upper hook. | 2014-10-30 |
20140319441 | ROADWAY GUARDRAIL SYSTEM - A roadway guardrail system including a rail and plurality of support posts assembled such that upon impact from a vehicle the rail moves upwardly with respect to the post. Fasteners may be used in the operative coupling of the rail to the support posts, such that upon impact the fasteners move upwardly with respect to the support posts and the rail moves upwardly along with the fasteners. The guardrail system may further include a reinforcing member that is slidable along the post and operatively coupled to the rail with the fasteners, such that the rail and fasteners slide along with the reinforcing member with respect to the support posts. The reinforcing member may be a spacer of various shapes, a washer, an additional rail section, or other type of member that allows the rail to slide upwardly with respect to the post. | 2014-10-30 |
20140319442 | RESISTANCE RANDOM ACCESS MEMORY DEVICE - A resistance random access memory device is provided, including a first resistance change layer, a second resistance change layer and an ion source layer. The first resistance change layer is made of a first material. The second resistance change layer is provided on the first resistance change layer. The second resistance change layer is made of a second material different from the first material. The ion source layer is provided on the second resistance change layer. The ion source layer includes a metal. The metal is able to reversibly move within the first resistance change layer and within the second resistance change layer. A width of the first resistance change layer is narrower than a width of the second resistance change layer. | 2014-10-30 |
20140319443 | Sequential Atomic Layer Deposition of Electrodes and Resistive Switching Components - Provided are methods of forming nonvolatile memory elements using atomic layer deposition techniques, in which at least two different layers of a memory element are deposited sequentially and without breaking vacuum in a deposition chamber. This approach may be used to prevent oxidation of various materials used for electrodes without a need for separate oxygen barrier layers. A combination of signal lines and resistive switching layers may be used to cap the electrodes and to minimize their oxidation. As such, fewer layers are needed in a memory element. Furthermore, atomic layer deposition allows more precise control of electrode thicknesses. In some embodiments, a thickness of an electrode may be less than 50 Angstroms. Overall, atomic layer deposition of electrodes and resistive switching layers lead to smaller thicknesses of entire memory elements making them more suitable for low aspect ratio features of advanced nodes. | 2014-10-30 |
20140319444 | Memory Cells and Methods of Making Memory Cells - Some embodiments include a memory cell having a data storage region between a pair of conductive structures. The data storage region is configured to support a transitory structure which alters resistance through the memory cell. The data storage region includes two or more portions, with one of the portions supporting a higher resistance segment of the transitory structure than another of the portions. Some embodiments include a method of forming a memory cell. First oxide and second oxide regions are formed between a pair of conductive structures. The oxide regions are configured to support a transitory structure which alters resistance through the memory cell. The oxide regions are different from one another so that one of the oxide regions supports a higher resistance segment of the transitory structure than the other. | 2014-10-30 |
20140319445 | RESISTIVE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A resistive memory device and a fabrication method thereof are provided. The resistive memory device includes a bottom structure including a heating electrode, data storage materials, each of the data storage materials formed on the bottom structure in a confined structure perpendicular to the bottom structure, and having a lower diameter smaller than an upper diameter, an upper electrode formed on each of the data storage materials, and an insulation unit formed between adjacent data storage materials. | 2014-10-30 |
20140319446 | RESISTIVE RAM DEVICES AND METHODS - The present disclosure includes a high density resistive random access memory (RRAM) device, as well as methods of fabricating a high density RRAM device. One method of forming an RRAM device includes forming a resistive element having a metal-metal oxide interface. Forming the resistive element includes forming an insulative material over the first electrode, and forming a via in the insulative material. The via is conformally filled with a metal material, and the metal material is planarized to within the via. A portion of the metal material within the via is selectively treated to create a metal-metal oxide interface within the via. A second electrode is formed over the resistive element. | 2014-10-30 |
20140319447 | Semiconductor Constructions and Memory Arrays - Some embodiments include semiconductor constructions having an electrically conductive interconnect with an upper surface, and having an electrically conductive structure over the interconnect. The structure includes a horizontal first portion along the upper surface and a non-horizontal second portion joined to the first portion at a corner. The second portion has an upper edge. The upper edge is offset relative to the upper surface of the interconnect so that the upper edge is not directly over said upper surface. Some embodiments include memory arrays. | 2014-10-30 |
20140319448 | METHOD FOR FORMING A PCRAM WITH LOW RESET CURRENT - Phase-change memory structures are formed with ultra-thin heater liners and ultra-thin phase-change layers, thereby increasing heating capacities and lowering reset currents. Embodiments include forming a first interlayer dielectric (ILD) over a bottom electrode, removing a portion of the first ILD, forming a cell area, forming a u-shaped heater liner within the cell area, forming an interlayer dielectric structure within the u-shaped heater liner, the interlayer dielectric structure including a protruding portion extending above a top surface of the first ILD, forming a phase-change layer on side surfaces of the protruding portion and/or on the first ILD surrounding the protruding portion, and forming a dielectric spacer surrounding the protruding portion. | 2014-10-30 |
20140319449 | Creating An Embedded ReRam Memory From A High-K Metal Gate Transistor Structure - An embodiment of the present invention sets forth an embedded resistive memory cell that includes a first stack of deposited layers, a second stack of deposited layers, a first electrode disposed under a first portion of the first stack, and a second electrode disposed under a second portion of the first stack and extending from under the second portion of the first stack to under the second stack. The second electrode is disposed proximate to the first electrode within the embedded resistive memory cell. The first stack of deposited layers includes a dielectric layer, a high-k dielectric layer disposed above the dielectric layer, and a metal layer disposed above the high-k dielectric layer. The second stack of deposited layers includes a high-k dielectric layer formed simultaneously with the high-k dielectric layer included in the first stack, and a metal layer disposed above the high-k dielectric layer. | 2014-10-30 |
20140319450 | DISTURB-RESISTANT NON-VOLATILE MEMORY DEVICE USING VIA-FILL AND ETCHBACK TECHNIQUE - A method of forming a disturb-resistant non volatile memory device includes providing a substrate and forming a first dielectric thereon, forming a first strip of material separated from a second strip of material from a first wiring material, and forming a second dielectric thereon to fill a gap between the first and second strips of material. Openings are formed in the second dielectric exposing portions of the first wiring material. Filing the openings by p+ polysilicon contact material, and then an undoped amorphous silicon material, and then a metal material. A second wiring structure is formed thereon to contact the metal material in the openings. Resistive switching cells are formed from the first wiring structure, the second wiring structure, the contact material, the undoped amorphous silicon material, and the metal material. | 2014-10-30 |
20140319451 | MEMORY CELL ARRAY AND VARIABLE RESISTIVE MEMORY DEVICE INCLUDING THE SAME - A memory cell array includes a semiconductor substrate, a first word line formed on the semiconductor substrate, a second word line formed on the semiconductor substrate and extending substantially parallel to the first word line, a first inter-pattern insulating layer interposed between the first and second word lines, first active pillars formed within the first word line and arranged along the first word line at a first interval, and second active pillars formed within the second word lines, and arranged along the second word line to face the first active pillars, respectively, with the first inter-pattern insulating layer interposed therebetween. | 2014-10-30 |
20140319452 | SINGLE TRANSISTOR RANDOM ACCESS MEMORY USING ION STORAGE IN TWO-DIMENSIONAL CRYSTALS - A single-transistor random access memory (RAM) cell may be used as universal memory. The single-transistor RAM cell generally includes a first gate, a 2D-crystal channel, a source, a drain, an ion conductor, and a second (back) gate. The single-transistor RAM cell is capable of drifting ions towards the graphene channel. The ions in turn induce charge carriers from the source into the graphene channel. The closer the ions are to the graphene channel, the higher the conductivity of the graphene channel. As the ions are spaced from the graphene channel, the conductivity of the graphene channel is reduced. Thus the presence of the charged ions adjacent to the channel is used to modify the channel's conductivity, which is sensed to indicate the state of the memory. | 2014-10-30 |
20140319453 | QUANTUM ROD AND METHOD OF FABRICATING THE SAME - The present invention provides a quantum rod including a core including zinc compound; and a shell covering the core and including ZnS. The quantum rod emits the short wavelength light. | 2014-10-30 |
20140319454 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - The present invention discloses a nitride semiconductor light emitting device with improved light efficiency. The nitride semiconductor light emitting device includes a n-type nitride layer and p-type nitride layer, an active layer disposed between the n-type and p-type nitride layers and with a multiple quantum well structure wherein a plurality of quantum well layers and a plurality of quantum barrier layers are stacked alternatively in the active layer, and a superlattice layer between the active layer and the p-type nitride layer with asymmetric structure. Herein, a thickness of a well layers gradually increases from the p-type nitride layer to the active layer and the height of the barrier layers gradually increases from the active layer to the p-type nitride layer and therefore, an injection efficiency of a hole supplied from p-type nitride layer to an active layer is increased. | 2014-10-30 |
20140319455 | SEMICONDUCTOR LIGHT EMITTING APPARATUS - A semiconductor light emitting apparatus includes semiconductor lamination of n-type layer, active layer, and p-type layer; recess penetrating the lamination from the p-type layer and exposing the n-type layer; n-side electrode formed on the n-type layer at the bottom of the recess and extending upward above the p-type layer; a p-side electrode formed on the p-type layer and having an opening surrounding the recess in plan view, the n-side electrode extending from inside to above the recess; and an insulating layer disposed between the p-side and the n-side electrodes on the p-type layer, the p-side electrode constituting a reflective electrode reflecting light incident from the active layer, the n-side electrode including a reflective electrode layer covering the opening in plan view and reflects light incident from the emission layer side, the reflective electrode layer having peripheral portion overlapping peripheral portion of the p-side electrode in plan view. | 2014-10-30 |
20140319456 | SEMICONDUCTOR LIGHT EMITTING DEVICE - The semiconductor light emitting device includes: a substrate; a first cladding layer disposed on the substrate; an emitting layer disposed on the first cladding layer; a second cladding layer disposed on the emitting layer; a contact layer disposed at a predetermined region on the second cladding layer; an optically transmissive electrode layer disposed on the contact layer; a surface electrode layer disposed on the optically transmissive electrode layer; and an aperture formed by opening a region corresponding to the predetermined region of the surface electrode layer. There is provided a semiconductor light emitting device of which the light extracting efficiency can be improved to achieve high luminance. | 2014-10-30 |
20140319457 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR WAFER, AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR LAYER - According to one embodiment, a semiconductor light emitting device includes: first and second semiconductor layers, a light emitting part, and an In-containing layer. The first semiconductor layer is formed on a silicon substrate via a foundation layer. The light emitting part is provided on the first semiconductor layer, and includes barrier layers and a well layer provided between the barrier layers including Ga | 2014-10-30 |
20140319458 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Certain embodiments provide a method for manufacturing a semiconductor light emitting device, including: providing a first stack film on a first substrate, the first stack film being formed by stacking a p-type nitride semiconductor layer, an active layer having a multiquantum well structure of a nitride semiconductor, and an n-type nitride semiconductor layer in this order; forming an n-electrode on an upper face of the n-type nitride semiconductor layer; and forming a concave-convex region on the upper face of the n-type nitride semiconductor layer by performing wet etching on the upper face of the n-type nitride semiconductor layer with the use of an alkaline solution, except for a region in which the n-electrode is formed. | 2014-10-30 |
20140319459 | METHODS FOR FABRICATING SELF-ALIGNING SEMICONDUCTOR HETEREOSTRUCTURES USING NANOWIRES - Methods for fabricating self-aligned heterostructures and semiconductor arrangements using silicon nanowires are described. | 2014-10-30 |
20140319460 | SEMICONDUCTOR LIGHT EMITTING DEVICE, NITRIDE SEMICONDUCTOR LAYER GROWTH SUBSTRATE, AND NITRIDE SEMICONDUCTOR WAFER - According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type and having a major surface, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first and second semiconductor layers. The major surface is opposite to the light emitting layer. The first semiconductor layer has structural bodies provided in the major surface. The structural bodies are recess or protrusion. A centroid of a first structural body aligns with a centroid of a second structural body nearest the first structural. hb, rb, and Rb satisfy rb/(2·hb)≦0.7, and rb/Rb<1, where hb is a depth of the recess, rb is a width of a bottom portion of the recess, and Rb is a width of the protrusion. | 2014-10-30 |
20140319461 | SINGLE-WALLED CARBON NANOTUBE-BASED PLANAR PHOTODECTOR - A single-walled carbon nanotube-based planar photodetector includes a substrate; a first electrode and a second electrode disposed on the substrate and spaced apart from each other; a plurality of single-walled carbon nanotubes, each of the plurality of single-walled carbon nanotubes contacting the first electrode and the second electrode; and an adsorbent attached to a surface of at least one of the plurality of single-walled carbon nanotubes, wherein the adsorbent is capable of doping the at least one of the plurality of single-walled carbon nanotubes by photo-excitation. | 2014-10-30 |
20140319462 | BUFFER LAYER OMEGA GATE - A device comprises insulation regions disposed in a substrate and a semiconductor fin extending above top surfaces of the insulation regions. The semiconductor fin comprises a first material. A semiconductor region comprising a second material extends from a first side of the semiconductor fin over a top of the fin to a second side of the fin. A strain buffer layer is disposed between, and contacts, the semiconductor fin and the semiconductor region. The strain buffer layer comprises an oxide, and a bottommost surface of the strain buffer layer is vertically spaced apart from the top surfaces of the insulation regions. | 2014-10-30 |
20140319463 | EPITAXIAL WAFER, METHOD FOR PRODUCING THE SAME, SEMICONDUCTOR ELEMENT, AND OPTICAL SENSOR DEVICE - An epitaxial wafer of the present invention includes a substrate composed of a III-V compound semiconductor, a multiple quantum well structure composed of a III-V compound semiconductor and located on the substrate, and a top layer composed of a III-V compound semiconductor and located on the multiple quantum well structure. The substrate has a plane orientation of ( | 2014-10-30 |
20140319464 | LIGHT RECEIVING ELEMENT AND METHOD FOR MANUFACTURING SAME - A light-receiving element includes a light-receiving layer for receiving light, the light-receiving layer being disposed on a semiconductor substrate, a contact layer disposed on the light-receiving layer, and a pixel electrode that is in ohmic contact with the contact layer. A back surface of the semiconductor substrate functions as a light-incident surface, and a reaction-preventing film for preventing a chemical reaction between the contact layer and the pixel electrode is interposed in a predetermined region between the contact layer and the pixel electrode. | 2014-10-30 |
20140319465 | PHOTODETECTION DEVICE - The invention relates to a photodetector for infrared light radiation having a given wavelength (λ), including a stack of layers consisting of: a continuous layer ( | 2014-10-30 |
20140319466 | ELECTROCHEMICALLY-GATED FIELD-EFFECT TRANSISTOR, METHODS FOR ITS MANUFACTURE, ITS USE, AND ELECTRONICS COMPRISING SAID FIELD-EFFECT TRANSISTOR - An electrochemically-gated field-effect transistor includes a source electrode, a drain electrode, a gate electrode, a transistor channel and an electrolyte. The transistor channel is located between the source electrode and the drain electrode. The electrolyte completely covers the transistor channel and has a one-dimensional nanostructure and a solid polymer-based electrolyte that is employed as the electrolyte. | 2014-10-30 |
20140319467 | FIELD-EFFECT TRANSISTOR WITH TWO-DIMENSIONAL CHANNEL REALIZED WITH LATERAL HETEROSTRUCTURES BASED ON HYBRIDIZED GRAPHENE - The invention is a field-effect transistor with a channel consisting of a thin sheet of one or more atomic layers of lateral heterostructures based on hybridized graphene. The role of lateral heterostructures is to modify the energy gap in the channel so as to enable the effective operation of the transistor in all bias regions. This solution solves the problem of the missing bandgap in single-layer and multi-layer graphene, which does not allow the fabrication of transistors that can be efficiently switched off. The possibility of fabricating lateral heterostructures, with patterns of domains with different energy dispersion relations, enables the realization of field-effect transistors with additional functionalities with respect to common transistors. | 2014-10-30 |
20140319468 | DISPLAY HAVING A BACKPLANE WITH INTERLACED LASER CRYSTALLIZED REGIONS - Systems including and methods for forming a backplane for an electronic display are presented. The backplane includes interlaced crystallized regions, and the interlaced crystallized regions include at least a left column of crystallized regions and a right column of crystallized regions. The left and right columns include rows of crystallized regions with gaps disposed between each of the rows. Furthermore, each crystallized region in the left column extends into a corresponding gap in the right column, and each crystallized region in the right column extends into a corresponding gap in the left column. | 2014-10-30 |
20140319469 | THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY - A thin film transistor includes a gate electrode extending from a scan line of a display and having an edge, and a connection line connecting the edge of the gate electrode to the scan line. | 2014-10-30 |
20140319470 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes: a substrate; a driving wire disposed on the substrate; a color filter disposed on the driving wire, where the color filter includes a blue color filter, a red color filter, and a green color filter formed on the driving wire; and an organic light emitting diode disposed on the color filter, where a width of the blue color filter is greater than a width of the red color filter or the green color filter. | 2014-10-30 |
20140319471 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display apparatus in which electrical communication between an opposing electrode and an electrode power supply line can be more easily checked without adding an additional process in a manufacturing process, and a method of manufacturing the organic light-emitting display apparatus, is provided. The organic light-emitting display apparatus includes thin film transistors and pixel electrodes electrically connected to the thin film transistors in an active area of a substrate, an opposing electrode in the active area and a dead area of the substrate, an electrode power supply line in the dead area of the substrate and having a surface contacting the opposing electrode and configured to supply power to the opposing electrode, and a test line in the dead area of the substrate separated from the electrode power supply line and contacting the opposing electrode. | 2014-10-30 |
20140319472 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting diode including a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode. The organic layer includes an emission layer with at least one light-emitting material, and a region between the first electrode and the emission layer with at least one hole transport material. The light-emitting material is represented by Formula 1 and the hole transport material is represented by one of Formulae 2 to 4: | 2014-10-30 |
20140319473 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT EMITTING DEVICE COMPRISING THE SAME - A compound represented by Formula 1 below and an organic light-emitting device including the compound are provided: | 2014-10-30 |
20140319474 | DISPLAY APPARATUS - Provided is a display apparatus that is bendable. The display apparatus includes: a substrate including a display region that includes a plurality of light-emitting devices and an edge region that surrounds the display region; and a thin-film encapsulation layer on the display region and the edge region of the substrate. The thin-film encapsulation layer includes a plurality of inorganic films and at least one organic film disposed between the plurality of the inorganic films. At least one of the plurality of the inorganic films of the thin-film encapsulation layer includes inorganic patterns. | 2014-10-30 |
20140319475 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - An organic light emitting diode display is disclosed. In one aspect, the display includes a pixel electrode formed on a substrate and a pixel defining layer on the pixel electrode, the pixel defining layer having an opening exposing a part of the pixel electrode, and a stepped side wall of the opening. The display also includes an organic emission layer on the pixel electrode in the opening of the pixel defining layer and a common electrode covering the organic emission layer and the pixel defining layer. The pixel defining layer has a stepped side wall of the opening. | 2014-10-30 |
20140319476 | ORGANIC LIGHT-EMITTING DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display and methods of manufacturing the same are disclosed. In one aspect, an organic light-emitting apparatus includes a substrate, a display unit on the substrate, a step compensation layer formed on the display unit and supplementing a step on a surface of the display unit, a first intermediate layer formed on the step compensation layer, and an encapsulation layer formed on the first intermediate layer and sealing the display unit. | 2014-10-30 |
20140319477 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting diode (OLED) display according to an exemplary embodiment of the present invention includes a substrate, a thin film transistor formed on the substrate, a pixel electrode formed on the thin film transistor and electrically connected to the thin film transistor, a pixel definition layer formed on the pixel electrode so as to define a pixel region, an emission layer formed on the pixel electrode and contacting the pixel electrode in the pixel region, and an interlayer formed on the pixel definition layer and contacting part of the emission layer. One side of the interlayer has an uneven shape so that a surface area of the interlayer is increased. | 2014-10-30 |
20140319478 | LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - A light emitting display device and a method for fabricating the same. The light emitting display device includes a substrate, a first electrode arranged on the substrate, a first insulating film arranged on the substrate and including a first opening that exposes a portion of the first electrode, a second insulating film arranged on the first insulating film and including a second opening that exposes the first opening, a light emitting layer including a light emitting material arranged on the exposed portion of first electrode while also being in contact with the first insulating film and a second electrode arranged on the light emitting layer, wherein a difference in wetting between the first electrode and the first insulating film with respect to the light emitting material is lower than a difference in wetting between the first electrode and the second insulating film with respect to the light emitting material. | 2014-10-30 |
20140319479 | ORGANIC LIGHT-EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display includes: a first electrode around a center point of a virtual square; second electrodes around a first vertex and a second vertex diagonal to the first vertex of the virtual square, the second electrodes being separated from each other and with the center point of the virtual square interposed therebetween; third electrodes around a third vertex and a fourth vertex of the virtual square, the third electrodes being separated from each other and with the center point of the virtual square interposed therebetween; a pixel defining layer partially on the first electrode, the second electrodes, and the third electrodes, and partially exposing the first electrode, the second electrodes, and the third electrodes; and four spacers disposed as islands on the pixel defining layer and corresponding to four sides of the virtual square. | 2014-10-30 |
20140319480 | ORGANIC LIGHT EMITTING DIODE DISPLAY - A pixel includes a capacitor coupled to a transistor, a first insulating layer over a semiconductor layer of the transistor, a second insulating layer over the first insulating layer, and a blocking layer between the first insulating layer and the second insulating layer. The first plate of the capacitor is on the first insulating layer and a second plate of the capacitor on the second insulating layer. The blocking layer may be made of a natural oxide layer and the first insulating layer may be made of a material different from the blocking layer. | 2014-10-30 |
20140319481 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is an organic light-emitting display device for forming a strong sealing structure. The organic light-emitting display device includes: a lower electrode that is disposed on a substrate; a first barrier wall that protrudes beyond a top surface of the lower electrode; and a second barrier wall that is disposed on at least a top surface of the first barrier wall and has a cross-section having a reverse-tapered shape, wherein the second barrier wall includes a low temperature viscosity transition (LVT) inorganic material including tin oxide. | 2014-10-30 |
20140319482 | LIGHT-EMITTING COMPONENT AND METHOD FOR PRODUCING A LIGHT-EMITTING COMPONENT - A light-emitting component may include: a first electrode; an organic electroluminescent layer structure on or above the first electrode; a second translucent electrode on or above the organic electroluminescent layer structure; an optically translucent layer structure on or above the second electrode, wherein the optically translucent layer structure includes photoluminescence material; and a mirror layer structure on or above the optically translucent layer structure. | 2014-10-30 |
20140319483 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode (OLED) display includes a substrate including a central area and a peripheral area adjacent the central area and bent at the center thereof, a first central OLED disposed on the central area of the bent substrate and including a first central organic emission layer having a first central thickness, and a first surrounding OLED disposed on the peripheral area of the bent substrate and including a first surrounding organic emission layer having a first surrounding thickness. | 2014-10-30 |
20140319484 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MASK UNIT - An organic light emitting diode display includes a first electrode, a pixel defining layer positioned on the first electrode and including a first opening having a first polygonal shape opening the first electrode, and a first organic emission layer positioned on the pixel defining layer through the first electrode corresponding to the first opening and including a first chamfer adjacent to a corner of the first opening. | 2014-10-30 |
20140319485 | ORGANIC LIGHT-EMITTING DIODES - Provided is an organic light-emitting diode including a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode, the organic layer including an emission layer and at least one first material represented by Formula 1 and at least one second material represented by Formula 2. | 2014-10-30 |
20140319486 | ORGANIC LIGHT-EMITTING DISPLAY - An organic light-emitting display includes first sub-pixels of a first color and second sub-pixels of a second color. Pairs of the first sub-pixels are consecutively arranged in different rows, and pairs of the second sub-pixels are consecutively arranged in different rows. The pairs of first sub-pixels and the pairs of second sub-pixels arranged alternately in a first column, and third sub-pixels are in a second column adjacent to the first column. When one sub-pixel is defective, a control circuit provides current another sub-pixel of the same color. | 2014-10-30 |
20140319487 | DONOR FILM FOR LASER INDUCED THERMAL IMAGING, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS USING THE DONOR FILM, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS MANUFACTURED BY USING THE DONOR FILM - Provided is a donor film for laser induced thermal imagining, a method of manufacturing an organic light-emitting display apparatus using the donor film, and an organic light-emitting display apparatus manufactured by using the same. The donor film includes a base film, a light to heat conversion layer on the base film, and a transfer layer on the light to heat conversion layer. The transfer layer includes a first color intermediate layer including a first color host and an emission layer between the first color intermediate layer and the light to heat conversion layer. | 2014-10-30 |
20140319488 | THIN FILM FORMATION FOR DEVICE SENSITIVE TO ENVIRONMENT - Embodiments relate to forming a barrier layer on a device before performing radical-assisted atomic layer deposition (RA-ALD) using ozone to form oxygen radicals that function as a reactant precursor for depositing a blanket deposition layer over the device. Before exposing the substrate to ozone or oxygen radicals generated from ozone or oxygen radicals with hydroxyl radicals (generated from ozone mixed with hydrogen-containing gas such as hydrogen or ammonia), the barrier layer is formed on the substrate by exposing the device formed on a substrate to radicals of nitrogen compound gas to prevent ozone, its radicals or oxygen radicals in combination with hydroxyl radicals from penetrating and damaging the device during the process of depositing the blanket deposition layer. | 2014-10-30 |
20140319489 | ORGANIC LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The present disclosure provides an organic light emitting device and a manufacturing method thereof. When the photovoltaic units are the integrated above the OLED unit, the photovoltaic units are transparent solar panels; when the photovoltaic units are integrated under the OLED unit, the photovoltaic units are gallium arsenide solar panels. By means of integrating a plurality of photovoltaic units are integrated into the organic light emitting devices, the present disclosure possesses functions of the transformation of electrical energy from luminous energy and the storage of the electrical energy in the photovoltaic units, i.e., the present disclosure is self powdered without any external power supply. Therefore, the present disclosure can achieve the environmental protection and the energy saving, as well as small volume, light weight and high integration level. | 2014-10-30 |
20140319490 | FUNCTIONAL POLARIZING FILM AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME - A functional polarizing film includes a polarizing layer, at least one moisture-binding layer on a first surface of the polarizing layer, and at least one moisture-blocking layer disposed on a first surface of the moisture-binding layer. | 2014-10-30 |
20140319491 | DISPLAY DEVICE - The invention provides an active matrix EL display device which can perform a clear multi-gray scale color display. In particular, the invention provides a large active matrix EL display device at low cost by a manufacturing method which can selectively form a pattern. Power supply lines in a pixel portion are arranged in matrix by the manufacturing method which can selectively form a pattern. Further, capacitance between wirings is reduced by providing a longer distance between adjacent wirings by the manufacturing method which can selectively form a pattern. | 2014-10-30 |
20140319492 | Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Device, and Lighting Device - Provided is a light-emitting element with high emission efficiency. The light-emitting element including a first electrode, a second electrode, and a layer containing an organic compound between the first electrode and the second electrode. The layer containing the organic compound includes a light-emitting layer at least containing a first organic compound, a second organic compound, and a fluorescent substance. The first organic compound has an electron-transport property. The second organic compound has a hole-transport property. The second organic compound has a triarylamine skeleton. At least one of three aryl groups in the triarylamine skeleton is a group including a p-biphenyl skeleton. | 2014-10-30 |
20140319493 | SUBSTRATE FOR DISPLAY APPARATUS, AND DISPLAY APPARATUS USING THE SAME - A substrate for a display apparatus includes a barrier layer disposed on a base substrate. The barrier layer includes a silicon oxide layer, and the silicon oxide layer includes a first part and a second part along a thickness direction of the barrier layer. The amount of silicon in the first part is different from the amount of silicon in the second part. | 2014-10-30 |
20140319494 | NOVEL ORGANIC COMPOUND, ORGANIC LIGHT-EMITTING ELEMENT, AND IMAGE DISPLAY UNIT - An organic compound contains 8H-naphth[2,1-b]carbazole as the basic skeleton thereof. An organic light-emitting element includes an organic compound layer containing the organic compound. A display device and an image display unit each include the organic light-emitting element. The organic light-emitting element is also used in a lighting device and an image forming apparatus. | 2014-10-30 |
20140319495 | NOVEL ORGANIC COMPOUND, ORGANIC LIGHT-EMITTING DEVICE, AND IMAGE DISPLAY SYSTEM - An organic compound has a dibenzo[8,9:10,11]tetrapheno[5,6-b]carbazole skeleton as a basic skeleton. An organic light-emitting device includes an anode, a cathode, and an organic compound layer including the organic compound. A display apparatus includes a plurality of pixels, and each of the pixels includes the organic light-emitting device and a transistor. An image display system includes an input section and a display section including the display apparatus. A lighting apparatus includes the organic light-emitting device and an inverter circuit. An electrophotographic image-forming apparatus includes a light source including a plurality of the organic light-emitting devices and a photosensitive member. | 2014-10-30 |
20140319496 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode display device includes a first substrate; a conductive line formed on a first surface of the first substrate; an organic light emitting diode and an encapsulation layer on the conductive line; a second substrate on the encapsulation layer; a conductive pad connected to the conductive line and arranged in a through hole passing through the first substrate; and a driving circuit unit on a second surface opposite the first surface of the first substrate and connected to the conductive pad. | 2014-10-30 |
20140319497 | PHOTOCURABLE ADHESIVE FILM FOR ORGANIC ELECTRONIC DEVICE SEAL, ORGANIC ELECTRONIC DEVICE, AND METHOD FOR SEALING SAME - Provided are a photocurable pressure-sensitive adhesive composition including an acrylic polymer, an epoxy resin, and a cationic photopolymerization initiator, an organic electronic device having an encapsulant including a photocured product of the composition using a curable pressure-sensitive adhesive film which is a film-state product including the composition, and a method for manufacturing an organic electronic device using the curable pressure-sensitive adhesive film. Particularly, due to the method including laminating a photocurable pressure-sensitive adhesive film including a curable pressure-sensitive adhesive layer including an acrylic polymer, an epoxy resin, and a cationic photopolymerization initiator to an top substrate, and radiating light to an entire surface of the curable pressure-sensitive adhesive layer to perform photocuring, and laminating the photocured curable pressure-sensitive adhesive layer to a bottom substrate on which an organic light emitting element is formed to cover an entire surface of the organic light emitting element, mechanical strength and a simple process caused by photocuring to the organic light emitting element without direct light irradiation may be achieved, and a lifespan of the element may be increased. | 2014-10-30 |
20140319498 | THIN FILM TRANSISTOR SUBSTRATE AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME - A thin film transistor substrate provided with two gate electrodes comprises a thin film transistor including a first gate electrode formed on the substrate; an active layer formed on the first gate electrode; first and second electrodes formed on the active layer; and a second gate electrode formed on the first electrode, the second electrode, and the active layer, wherein the second gate electrode is provided with an opening formed in an area corresponding to at least a part of the second electrode. | 2014-10-30 |
20140319499 | Light Emitting Device, Method of Manufacturing the Same, and Manufacturing Apparatus Therefor - A light emitting device having high definition, a high aperture ratio, and high reliability is provided. The present invention achieves high definition and a high aperture ratio with a full color flat panel display using red, green, and blue color emission light by intentionally forming laminate portions, wherein portions of different organic compound layers of adjacent light emitting elements overlap with each other, without depending upon the method of forming the organic compound layers or the film formation precision. | 2014-10-30 |
20140319500 | LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE USING SAME - A display device having a plurality of light-emitting elements that construct picture elements aligned on a TFT substrate in a formation of a matrix. The display device includes the plurality of light-emitting elements each having a flat surface portion and including a light-emitting layer, an anode, and a cathode; a plurality of driver elements each coupled to the light-emitting element; a plurality of capacitor elements each of which is coupled to the light emitting element and receives an image signal; a plurality of switching elements each of which is coupled to the capacitor element and the light emitting element and control input of the image signal to the capacitor; and an insulation layer having a contact hole formed over the driver element. The anode is formed on the insulation layer and coupled to the driver element via the contact hole. | 2014-10-30 |
20140319501 | ORGANIC EL PANEL AND METHOD OF MANUFACTURING THE SAME - The present invention is to ensure that when it has been judged that film-formation areas of a plurality of layers laminated on the same luminescent areas of organic EL devices involve a defect, it is possible to exactly find which layer of the multi-laminated layers is a defective layer. The film formation areas of layers to be laminated on luminescent area are formed in a manner such that overlap deviations e1-e3 are intentionally formed. | 2014-10-30 |
20140319502 | COATING COMPOSITION, POROUS MEMBRANE, LIGHT SCATTERING MEMBRANE, AND ORGANIC ELECTROLUMINESCENT ELEMENT - An object of the present invention is to provide a coating composition capable of being easily formed by coating or the like, and a porous membrane and a light scattering layer which are excellent in heat resistance, surface smoothness and flexibility and have a high refractive index, a high light scattering property, and a high light transmittance, and further an organic electroluminescent element having the light scattering layer. It has been found that voids are formed inside a cured product obtained by curing a composition containing a polysilane, a metal oxide, and a solvent. The cured product having the voids formed therein has a light scattering property and therefore is applicable as a light scattering membrane. | 2014-10-30 |
20140319503 | SEMICONDUCTING POLYMER - A semiconducting polymer formed from an insulator polymer and an ionic liquid is disclosed. In at least one embodiment, the semiconducting polymer may be formed from a homogenous blend of two or more insulator polymers and two or more ionic liquids. The homogenous mixture of non-conducting polymers and ionic liquid may be formed as a film of semiconducting polymer with a controllable thickness. The semiconducting polymer may be used in a multitude of different applications, including, but not limited to, storage devices. | 2014-10-30 |
20140319504 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - Imidazo[1,2-f]phenanthridine compounds are provided. The compounds have a twisted aryl moiety further substituted by alkyl having four or more atoms. The compounds may be used in organic light emitting devices, particularly as emissive dopants, providing devices with improved efficiency, stability, and manufacturing. In particular, the compounds provided herein may be used in blue devices having high efficiency. | 2014-10-30 |
20140319505 | IRIDIUM COMPLEX COMPOUND, SOLUTION COMPOSITION CONTAINING THE COMPOUND, ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY, AND LIGHTING - The present invention is to provide an iridium complex compound, which is soluble in an organic solvent, which can be stored for long periods without reprecipitation thereof and which secures a low driving voltage and a high luminescent efficiency of an organic electroluminescent element produced using the compound, to provide an organic electroluminescent element containing the compound and to provide a display and a lighting using the organic electroluminescent element. The present invention relates to the iridium complex compound having a specific chemical structure. Further, the invention also relates to the organic electroluminescent element produced using the compound, which requires a low operating voltage and has a long operating lifetime. | 2014-10-30 |
20140319506 | ORGANIC ELECTROLUMINESCENT DEVICE HAVING TERNARY DOPED HOLE TRANSPORTATION LAYER AND PREPARATION METHOD THEREFOR - Disclosed are an organic electroluminescent device having ternary doped hole transportation layer and a preparation method therefor. The electroluminescent device comprises a conductive anode substrate ( | 2014-10-30 |
20140319507 | Organic Electroluminescent Element, Material for Organic Electroluminescent Element, Light Emitting Device, Display Device and Lighting Device Each Using Said Element, and Compound Used for Said Element - This application relates, in part, to an organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and at least one organic layer including a light emitting layer, disposed between the electrodes, in which at least one layer of the organic layer(s) contains a compound represented by the following formula (1). The organic electroluminescent element has low driving voltage and excellent durability. | 2014-10-30 |
20140319508 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - In order to provide an organic electroluminescent display device which does not exhibit redness in reflected external light, and exhibits little fluctuation in the hue of a black image as a result of changes in environmental temperature and differences in the light emitting state, the organic electroluminescent display device according to the present invention comprises, in order from the viewing side, a protective film, a polarizer, a λ/4 phase difference film, and an organic electroluminescent element, and is characterized in that the λ/4 phase difference film satisfies formulas (1) and (2) below. | 2014-10-30 |
20140319509 | ORGANIC PHOTOELECTRIC CONVERSION ELEMENT, AND SOLAR CELL AND OPTICAL SENSOR ARRAY EACH USING SAME - An organic photoelectric conversion element which sequentially comprises a transparent first electrode, a photoelectric conversion layer that contains a p-type organic semiconductor material and an n-type organic semiconductor material, and a second electrode in this order on a transparent substrate. | 2014-10-30 |
20140319510 | BENZOFLUORENE COMPOUND, MATERIAL FOR LUMINESCENT LAYER USING SAID COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE - The present invention is capable of providing a light emitting device with excellent device lifetime while maintaining low driving voltage and good color purity by using a benzofluorene compound which is substituted with a diaryl amino group having a naphthyl and a phenyl or a heteroaryl and which is represented by general formula (1) as a material for luminescent layers of an organic electroluminescent device, for example. (In the formula, Ar is a phenyl, a heteroaryl, etc., R | 2014-10-30 |
20140319511 | AROMATIC AMINE DERIVATIVE, MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENT, AND ORGANIC ELECTROLUMINESCENT ELEMENT - An aromatic amine derivative is represented by the following formula (1). In the formula (1), R | 2014-10-30 |
20140319512 | THIN-FILM TRANSISTOR STRUCTURE, AS WELL AS THIN-FILM TRANSISTOR AND DISPLAY DEVICE EACH HAVING SAID STRUCTURE - There is provided an oxide semiconductor layer capable of making stable the electric characteristics of a thin-film transistor without requiring an oxidatively-treated layer when depositing a passivation layer or the like in display devices such as organic EL displays and liquid crystal displays. The thin-film transistor structure of the present invention at least having, on a substrate, an oxide semiconductor layer, a source-drain electrode, and a passivation layer in order from the substrate side, wherein the oxide semiconductor layer is a stacked product of a first oxide semiconductor layer and a second oxide semiconductor layer; the first oxide semiconductor layer has a Zn content of 50 atomic % or more as a percentage of all metal elements contained therein, and the first oxide semiconductor layer is formed on the source-drain electrode and passivation layer side; the second oxide semiconductor layer contains Sn and at least one element selected from the group consisting of In, Ga, and Zn, and the second oxide semiconductor layer is formed on the substrate side; and the first oxide semiconductor layer is in direct contact both with the source-drain electrode and with the passivation layer. | 2014-10-30 |
20140319513 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate having a hexagonal crystalline structure and a (0001) surface, and conductive films on the surface of the substrate. The conductive films include a first conductive film and a second conductive film located above the first conductive film with respect to the surface, wherein the first conductive film has a crystalline structure which does not have a plane that has a symmetry equivalent to the symmetry of atomic arrangement in the surface of the substrate, the second conductive film has a crystalline structure having at least one plane that has a symmetry equivalent to the symmetry of atomic arrangement in the surface of the substrate, and the second conductive film is polycrystalline and has a grain size no larger than 15 μm. | 2014-10-30 |
20140319514 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×10 | 2014-10-30 |
20140319515 | THIN FILM TRANSISTOR SUBSTRATE AND MANUFACTURING METHOD THEREOF - A TFT substrate includes a TFT including a source electrode having a lower source electrode and an upper source electrode, which are electrically connected to each other, and a drain electrode having a lower drain electrode and an upper drain electrode, which are electrically connected to each other. The lower source electrode and the lower drain electrode are in contact with a lower surface of the semiconductor film, and the upper source electrode and the upper drain electrode are in contact with an upper surface of the semiconductor film. | 2014-10-30 |
20140319516 | SEMICONDUCTOR DEVICE - To provide a semiconductor device suitable for miniaturization. To provide a highly reliable semiconductor device. To provide a semiconductor device formed using an oxide semiconductor and having favorable electrical characteristics. A semiconductor device includes an island-shaped semiconductor layer over an insulating surface; a pair of electrodes in contact with a side surface of the semiconductor layer and overlapping with a part of a top surface of the semiconductor layer; an oxide layer located between the semiconductor layer and the electrode and in contact with a part of the top surface of the semiconductor layer and a part of a bottom surface of the electrode; a gate electrode overlapping with the semiconductor layer; and a gate insulating layer between the semiconductor layer and the gate electrode. In addition, the semiconductor layer includes an oxide semiconductor, and the pair of electrodes includes Al, Cr, Cu, Ta, Ti, Mo, or W. | 2014-10-30 |
20140319517 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - To provide a transistor formed using an oxide semiconductor film with reduced oxygen vacancies. To provide a semiconductor device that operates at high speed. To provide a highly reliable semiconductor device. To provide a miniaturized semiconductor device. The semiconductor device includes an oxide semiconductor film; a gate electrode overlapping with the oxide semiconductor film; a gate insulating film between the oxide semiconductor film and the gate electrode; and a protective insulating film that is above the oxide semiconductor film, the gate electrode, and the gate insulating film and includes a region containing phosphorus or boron. | 2014-10-30 |
20140319518 | SEMICONDUCTOR DEVICE AND DRIVING METHOD THEREOF - A semiconductor device has a non-volatile memory cell including a write transistor which includes an oxide semiconductor and has small leakage current in an off state between a source and a drain, a read transistor including a semiconductor material different from that of the write transistor, and a capacitor. Data is written or rewritten to the memory cell by turning on the write transistor and applying a potential to a node where one of a source electrode and drain electrode of the write transistor, one electrode of the capacitor, and a gate electrode of the read transistor are electrically connected to one another, and then turning off the write transistor so that the predetermined amount of charge is held in the node. | 2014-10-30 |
20140319519 | SEMICONDUCTOR DEVICE - An oxide semiconductor layer in which “safe” traps exist exhibits two kinds of modes in photoresponse characteristics. By using the oxide semiconductor layer, a transistor in which light deterioration is suppressed to the minimum and the electric characteristics are stable can be achieved. The oxide semiconductor layer exhibiting two kinds of modes in photoresponse characteristics has a photoelectric current value of 1 pA to 10 nA inclusive. When the average time τ | 2014-10-30 |
20140319520 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. An oxide semiconductor layer including SiO | 2014-10-30 |