43rd week of 2013 patent applcation highlights part 15 |
Patent application number | Title | Published |
20130277601 | COMPOSITE, SOFT-MAGNETIC POWDER AND ITS PRODUCTION METHOD, AND DUST CORE FORMED THEREBY - A composite, soft-magnetic powder comprising soft-magnetic, iron-based core particles having an average particle size of 2-100 μm, and boron nitride-based coating layers each covering at least part of each soft-magnetic, iron-based core particle, said coating layers being polycrystalline layers comprising fine boron nitride crystal grains having different crystal orientations and an average crystal grain size of 3-15 nm, the average thickness of said polycrystalline layers being 6.6% or less of the average particle size of said soft-magnetic, iron-based core particles, is produced by (1) mixing iron nitride powder having an average particle size of 2-100 μm with boron powder having an average particle size of 0.1-10 μm, (2) heat-treating the resultant mixed powder at a temperature of 600-850° C. in a nitrogen atmosphere, and (3) removing non-magnetic components. | 2013-10-24 |
20130277602 | ETCHING AGENT FOR ALUMINUM OR ALUMINUM ALLOY - A composition of an etching agent for aluminum or aluminum alloy and a treatment method thereof are provided. The etching agent does not contain a component not suitable for a wastewater treatment, such as boron and fluorine, and has stable etching performance even when performing an etching treatment continuously. The etching agent has excellent aging resistance providing good etching uniformity and corrosion resistance after etching. This etching agent is an etching agent for aluminum or aluminum alloy, including 50 parts by mass of an aminocarboxylic acid, 5 to 300 parts by mass of at least one selected from a hydroxycarboxylic acid, a dicarboxylic acid, a polycarboxylic acid, and salts thereof, and 10 to 800 parts by mass of at least one selected from a hydroxide, a carbonate, and a bicarbonate of an alkali metal, wherein an aqueous solution of the etching agent has a pH of 8 to 10. | 2013-10-24 |
20130277603 | PROCESS FOR PREPARATION, APPLICATION AND RECOVERY OF ABSORBENT MATERIAL FOR NONPOLAR COMPOUNDS OR MIXTURES - The present invention describes the method for preparing, using and recovering an absorbent material for apolar compounds or mixtures of apolar compounds, such as organic solvents, mineral oil and derivatives thereof, lubricant oils, edible oils, inter alia. The absorbent material is composed of an inorganic matrix of high porosity, low density and high mechanical resistance. This matrix is rendered water-proof, thus acquiring the property of absorbing apolar compounds or mixtures of apolar compounds. | 2013-10-24 |
20130277604 | POSITIVE ELECTRODE COMPOSITION FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY - A positive electrode composition for nonaqueous electrolyte secondary battery comprises a lithium transition metal complex oxide represented by a general formula Li | 2013-10-24 |
20130277605 | Cyclohexylbenzene Compositions - In a process for producing phenol and cyclohexanone, a feed comprising cyclohexylbenzene is oxidized to produce an oxidation reaction product comprising cyclohexyl-1-phenyl-1-hydroperoxide. At least a portion of the oxidation reaction product is then cleaved to produce a cleavage reaction product comprising phenol, cyclohexanone, and at least one contaminant. At least a portion of the cleavage reaction product is contacted with an acidic material to convert at least a portion of the at least one contaminant to a converted contaminant and thereby produce a modified reaction product. The oxidation reaction product may have at least 50 wt % of cyclohexylbenzene, no greater than 80 wt % of cyclo-hexyl-1-phenyl-1-hydroperoxide, and 0.1 wt % to 10 wt % of another hydroperoxide. | 2013-10-24 |
20130277606 | METHOD FOR INHIBITING FOULING IN VAPOR TRANSPORT SYSTEM - Elimination and/or mitigation of fouling in a vapor transport systems, such as vent lines and scrubber feed lines may be accomplished using an antifouling additive. The method for employing the antifouling additive includes introducing into the vapor transport system an additive including a polar solvent and corrosion inhibitor wherein: the vapor transport system is substantially water free; the vapor transport system is used to transport acidic materials; the additive is a liquid at vapor transport system operating conditions; and the additive is stable at the vapor transport system operating conditions. | 2013-10-24 |
20130277607 | METAL HYDRIDE ALLOYS HAVING IMPROVED ACTIVATION AND HIGH RATE PERFORMANCE - A multi-phase metal hydride alloy material which is capable of reversibly absorbing and desorbing hydrogen includes a first main phase or group of phases having an AB | 2013-10-24 |
20130277608 | WATER-ABSORBING POLYSACCHARIDE AND METHOD FOR PRODUCING THE SAME - A process for producing a polysaccharide superabsorbent particulate including the process steps of bringing into contact a polysaccharide with a polyphosphate or a polyphosphoric acid as crosslinking agent in the presence of water to form a polysaccharide gel drying the polysaccharide gel, comminuting the dried polysaccharide gel to form polysaccharide superabsorbent polymer particles, coating the particles with a polyphosphate or polyphosphoric acid, crosslinking the coated particles, and surface treating the particulate with a metal multivalent salt or an acid. The invention further relates to a polysaccharide superabsorbent polymer particulate obtainable by this process, a water-absorbent polysaccharide, a composite, a process for producing a composite, a composite produced by this process, the use of the polysaccharide superabsorbent particulates or of the composites as well as the use of polyphosphates. | 2013-10-24 |
20130277609 | COMPOUND HAVING FOUR POLYMERIZABLE GROUPS, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - A compound represented by formula (1), a liquid crystal composition, a liquid crystal display device are described. | 2013-10-24 |
20130277610 | LIQUID CRYSTAL COMPOUND SHOWING NEGATIVE DIELECTRIC ANISOTROPY, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - To provide a liquid crystal compound having a large negative value of dielectric anisotropy (As). A compound is represented by formula (1): | 2013-10-24 |
20130277611 | COMPOUNDS FOR A LIQUID CRYSTALLINE MEDIUM AND USE THEREOF FOR HIGH FREQUENCY COMPONENTS - The present invention relates to compounds containing at least three ring systems, at least one of which is a 2,6-naphthylene group, and two unsaturated bridging groups between the ring systems, and to the use of the compounds for high-frequency components, in particular antennae, especially for the gigahertz region. The liquid-crystalline media comprising these compounds serve, for example, for the phase shifting of microwaves for tuneable ‘phased-array’ antennae. | 2013-10-24 |
20130277612 | CYCLOHEXENE-3,6-DIYL COMPOUND, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - To provide a compound, when the compound has both a high clearing point and a low crystallization temperature, having a wide temperature range of a liquid crystal phase and also an excellent solubility in other liquid crystal compounds, and further having general physical properties necessary for the compound, namely, stability to heat, light and so forth, a suitable optical anisotropy and a suitable dielectric anisotropy. A compound is represented by formula (1): | 2013-10-24 |
20130277613 | METHOD AND APPARATUS FOR SINTERING FLAT CERAMICS - A method and apparatus for sintering flat ceramics using a mesh or lattice is described herein. | 2013-10-24 |
20130277614 | SYNTHESIS OF WATER SOLUBLE NON-TOXIC NANOCRYSTALLINE QUANTUM DOTS AND USES THEREOF - An economic, direct synthetic method for producing water soluble ZnS QDs that are ready for bioconjugation is provided. The method can produce aqueous ZnS QDs with emission wavelengths varying from 400 nm to 700 nm. Highly luminescent metal sulfide (MS) QDs are produced via an aqueous synthesis route. MS QDs are capped with thiol-containing charged molecules in a single step. The resultant MS QDs exhibit the distinctive excitonic photoluminescence desired of QDs and can be fabricated to avoid undesirable broadband emissions at higher wavelengths. The aqueous ZnS QDs are stable in biological fluids over a long period of time. In addition, non-toxic ZnS QDs have been produced with good photoluminescence properties. | 2013-10-24 |
20130277615 | PARTIAL OXIDATION FEED SYSTEM AND METHOD - A system includes a slag additive slurry feed system configured to combine a slurrying agent, a mineral slag additive, and a liquid slurrying medium to generate a stabilized mineral slurry. The slurrying agent is configured to increase a viscosity of the stabilized mineral slurry. The system also includes a partial oxidation system configured to receive the stabilized mineral slurry, a feedstock, and oxygen into a gasifier reaction chamber. The partial oxidation system is configured to partially oxidize the feedstock to produce a gaseous product and a solid product. | 2013-10-24 |
20130277616 | CHEMICALLY BONDED CERAMIC RADIATION SHIELDING MATERIAL AND METHOD OF PREPARATION - A composition of matter and method of forming a radiation shielding member at ambient temperatures in which the composition of matter includes a ‘cold-fired’ chemically bonded oxide-phosphate ceramic cement matrix; with one or more suitably prepared and distributed radiation shielding materials dispersed in the ‘cold-fired’ chemically bonded oxide-phosphate ceramic cement matrix. | 2013-10-24 |
20130277617 | ORGANIC ELECTROLUMINESCENT DEVICE - The present invention relates to a mixture comprising two different compounds A and B, each of which contain emitter units, where at least one of the compounds is a polymer. The present invention furthermore relates to a non-conjugated polymer or dendrimer which contains two emitting units covalently bonded as polymer building blocks, to the use of the mixture, the polymer or dendrimer in electronic devices, to electronic devices comprising the mixture, the polymer or dendrimer, and to a formulation comprising the mixture, the polymer or dendrimer in a solvent. | 2013-10-24 |
20130277618 | Bulk Purification and Deposition Methods for Selective Enrichment in High Aspect Ratio Single-Walled Carbon Nanotubes - The present disclosure includes purification and deposition methods for single-walled carbon nanotubes (SWNTs) that allow for purification without damaging the SWNTs. The present disclosure includes methods for reducing electrical resistance in SWNT networks. | 2013-10-24 |
20130277619 | PROCESS FOR THE PREPARATION OF HIGH VOLTAGE NANO COMPOSITE CATHODE (4.9vV) FOR LITHIUM ION BATTERIES - An olivine structured nano-composite LiM | 2013-10-24 |
20130277620 | METHOD FOR MODIFYING POSITIVE ELECTRODE MATERIALS FOR LITHIUM-ION BATTERIES - A method for modifying a positive electrode material for a lithium-ion battery. The method includes: a) stirring a liquid polyacrylonitrile (LPAN) solution at the temperature of between 80 and 300° C. for between 8 and 72 h to yield a cyclized LPAN solution; b) adding positive electrode material for a lithium-ion battery, in a powder form, to the cyclized LPAN solution, and evenly mixing a resulting mixture; c) grinding the mixture, and drying the mixture at room temperature; and d) calcining the mixture at the temperature of between 500 and 1800° C. for between 6 and 24 h in the presence of an inert gas to form a graphene-like structure by the cyclized LPAN. The graphene-like structure is evenly distributed in the positive electrode material of the lithium-ion battery to yield a graphene-like structure modified positive electrode material of the lithium-ion battery. | 2013-10-24 |
20130277621 | POLYMER PARTICLE - A heat-treated polymer particle comprising an addition polymer core particle which has had swollen and polymerised therein a blend of an aromatic alcohol with an aldehyde or a blend of an aromatic amine or urea with an aldehyde and which has been subsequently heat treated, e.g. to a temperature of at least 150° C. | 2013-10-24 |
20130277622 | METAL PASTE MANUFACTURING METHOD FOR INTERNAL ELECTRODE OF MULTI LAYER CERAMIC CAPACITOR - A method of manufacturing a metal paste for an internal electrode according to the present invention includes preparing each of a metal powder and an organic vehicle; preparing a ceramic inhibitor powder in which a nano glass added with a rare-earth element is mixed; manufacturing a primary mixture by mixing the metal powder of 70 to 95 wt % and the ceramic inhibitor powder of 5 to 30 wt % when each of the metal powder, the organic vehicle, and the ceramic inhibitor powder in which the nano glass added with the rare-earth element is mixed is prepared; manufacturing a secondary mixture by mixing the primary mixture of 50 to 70 wt % and the organic vehicle of 30 to 50 wt % when the primary mixture is manufactured; and manufacturing the metal paste for the internal electrode by filtering the secondary mixture when the secondary mixture is manufactured. | 2013-10-24 |
20130277623 | PROCESS FOR THE SURFACE MODIFICATION OF A POLYMER PARTICLE - A process for the preparation of an activated polymer particle comprising contacting a polymer particle with at least one polyamine, wherein said polyamine has three or more amino groups, to form a surface treated polymer particle; and applying a catalyst to the surface treated polymer particle to form an activated polymer particle. | 2013-10-24 |
20130277624 | Solar Cell Metallizations Containing Metal Additive - Paste compositions, methods of making a paste composition, and methods of making a solar cell contact are disclosed. The paste composition can contain silver, a glass frit, a metal additive and an organic vehicle system. The metal additive is at least one selected from the group consisting of yttrium, an organo-vanadium compound, organo-antimony compound, organo-phosphorus compound, and an organo-yttrium compound. The paste can be used for making a solar cell contact. | 2013-10-24 |
20130277625 | TRANSPARENT CONDUCTORS INCORPORATING ADDITIVES AND RELATED MANUFACTURING METHODS - A transparent conductor includes a film of a conductive ceramic and conductive additives at least partially incorporated into the film and localized within a region of the film. A thickness of the region is less than an overall thickness of the film, and at least one of the conductive additives has an aspect ratio of at least 3. The transparent conductor has a sheet resistance that is less than an intrinsic sheet resistance of the film. | 2013-10-24 |
20130277626 | TUNGSTEN POWDER, ANODE BODY FOR CAPACITORS, AND ELECTROLYTIC CAPACITOR - A tungsten powder having tungsten silicide such as W | 2013-10-24 |
20130277627 | PHOTOSENSITIVE RESIN COMPOSITION AND APPLICATIONS OF THE SAME - A photosensitive resin composition includes (A) an alkali-soluble resin, (B) a polysiloxane, (C) an ethylenically unsaturated compound, (D) a photo-initiator, (E) a solvent, (F) a black pigment, and (G) a metal chelate. The alkali-soluble resin (A) includes an unsaturated-group-containing resin (A-1) obtained by subjecting a mixture containing (i) an epoxy compound having at least two epoxy groups and (ii) a compound having at least one carboxyl group and at least one ethylenically unsaturated group to polymerization. | 2013-10-24 |
20130277628 | AUTOMOTIVE JACK CONVERTER AND COOPERATING CASE - A portable and self-contained prime mover arrangement. A base is positioned on a generally horizontal surface and is so stabilized and so balanced so as to be readily insertable under a vehicle requiring lifting off the generally horizontal surface while remaining in full contact with the generally horizontal surface during positioning under, and lifting or lowering, the vehicle. An electric motor is positioned on the base. A gear box is positioned on the base, and is operatively connected to the electric motor. A coupler is positioned on the base, is operatively connected to the gear box, receives, and thereby motorizes, either a conventional and pre-existing mechanical bottle jack or a conventional and pre-existing scissor jack. A handle is replaceably attached to the base, and readily inserts the portable and self-contained prime mover arrangement under the vehicle or removes the portable and self-contained prime mover arrangement from under the vehicle. | 2013-10-24 |
20130277629 | Method for Laying a Plurality of Successive Sections of Cables in Order to Form a Cabled Connection of Great Length - A method for laying a plurality of cable sections to be successively positioned in series in a buried duct, according to a flowing-pushing method using a pressurized fluid. The different cable sections are successively introduced into the duct in a single entry point comprising a laying device notably comprising an orifice for introducing a pressurized fluid, a cable section entirely introduced into the duct is pushed towards the position which it should occupy in the duct, only by the pressure of the fluid introduced by said laying device and when a cable section has reached his final position in the duct, an opening is made in the duct near to the rear of the cable section. | 2013-10-24 |
20130277630 | HEAVY DUTY RATCHET - A ratchet includes a spool rotatably disposed within a housing and supporting a cord having opposed cord sections extending from the housing. Tension to one cord section is initially applied by pulling on the other cord section. To increase the tension, a tool is engaged with the spool to apply a further force to increase the tension on the one cord section. In another embodiment, a cord enters the housing and into the center of a hollow shaft supporting a spool and drawn through the hollow shaft to establish an initial degree of tension on the section of the cord entering the housing. A lever cooperating with the spool turns the spool to wrap the cord about the spool and increase the tension on the cord. In a third embodiment, a cord enters a housing and extends about a spool supported within the housing and thereafter exits the housing. A pivotable lever incrementally rotates the spool to increase the tension on the cord entering the housing. To further increase the tension on the spool, a wrench or the like may engage the shaft supporting the spool in any of the ratchets described. | 2013-10-24 |
20130277631 | Disabling System for Auto-Arresting Safety Device - An auto-arresting safety device, comprising a housing; a fall arrest system supported by the housing, and having a first component moveable with respect to a second component, the fall arrest system being actuatable in response to a load to arrest movement of the first component relative to the second component, the fall arrest system being resettable to restore movement of the first component relative to the second component upon the load being at least partially removed; and a disabling system operable to prevent resetting of the fall arrest system upon the load exceeding a threshold load, such that, when actuated, the disabling system renders the safety device inoperable. | 2013-10-24 |
20130277632 | Lifting device, particularly for lifting wheels and the like, for wheel balancing and tire moving machines - A lifting device, particularly for lifting wheels of vehicles and the like, for wheel balancing and tire removing machines, comprising a scissor-like frame, which is interposed between at least two flat and mutually parallel elements for their mutual translational motion as a consequence of the action of motor means functionally associated with the scissor-like frame, the lifting device further comprising a cam-type profiled element, which can be engaged functionally with the motor for dynamic and static balancing between the thrust force generated by the motor and the contrast force of the scissor-like frame in addition to the weight of the object to be lifted, which is arranged on one of the two flat and parallel elements, in all the operating positions of the lifting device. | 2013-10-24 |
20130277633 | SYSTEM AND DEVICE FOR CONTAINING A DUMPSTER - The present invention relates to a novel dumpster enclosure having replaceable panels and a front gate designed with sockets positioned to allow access to a dumpster lift arm opening for removal of the dumpster front enclosure by a garbage truck without exiting the garbage truck. | 2013-10-24 |
20130277634 | ADJUSTABLE RAILING - A vertically adjustable railing having first and second elongate balusters each with a first and second ends, the balusters having a first connection elements at their first ends and second connection elements along their length. An elongate handrail is pivotally connected at its first end to the first connection element of the first baluster and pivotally connected at its second end to the first connection element of the second baluster. An elongate lower rail having a first end and a second end is pivotally connected at its first end to the second connection element of the first baluster and pivotally connected at its second end to the second connection element of the second baluster. A distance between the first end and the second connection element of the first baluster is greater than the distance between the first end and the second connection element of the second baluster. | 2013-10-24 |
20130277635 | SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD - In a semiconductor device including a memory cell array formed of memory cells using a storage element by a variable resistor and a select transistor, a buffer cell is arranged between a sense amplifier and the memory cell array and between a word driver and the memory cell array. The resistive storage element in the memory cell is connected to a bit-line via a contact formed above the resistive storage element. Meanwhile, in the buffer cell, the contact is not formed above the resistive storage element, and a state of being covered with an insulator is kept upon processing the contact in the memory cell. By such a processing method, exposure and sublimation of a chalcogenide film used in the resistive storage element can be avoided. | 2013-10-24 |
20130277636 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a variable resistance memory device includes forming a first electrode, forming a first metal oxide layer which satisfies chemical stoichiometry over the first electrode, forming a second metal oxide layer which is lower in oxygen content than the first metal oxide layer by reducing a part of the first metal oxide layer, and forming a second electrode over the second metal oxide layer. | 2013-10-24 |
20130277637 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistance memory device has memory cells that are operated by Joule's heat and which are highly thermally efficient. Conductive patterns are formed on a substrate; sacrificial patterns exposing a portion of the top surface of each of the conductive patterns are formed on the conductive patterns, lower electrodes are formed by etching upper portions of the conductive patterns using the sacrificial patterns as an etching mask, then mold patterns are formed on the lower electrodes and cover exposed sidewall surfaces of the sacrificial patterns, and then the sacrificial patterns are replaced with variable resistance patterns. | 2013-10-24 |
20130277638 | Memristive Element and Electronic Memory Based on Such Elements - The invention relates to a memristive element (M) formed by: a first electrode ( | 2013-10-24 |
20130277639 | SELF-ALIGNED PROCESS TO FABRICATE A MEMORY CELL ARRAY WITH A SURROUNDING-GATE ACCESS TRANSISTOR - A memory array including a plurality of memory cells. Each word line is electrically coupled to a set of memory cells, a gate contact and a pair of dielectric pillars positioned parallel to the word line with a spacer of electrically insulating material surrounding the gate contact. Also a method to prevent a gate contact from electrically connecting to a source contact for a plurality of memory cells on a substrate. The method includes depositing and etching gate material to partially fill a space between the pillars and to form a word line for the memory cells, etching a gate contact region for the word line between the pair of pillars, forming a spacer of electrically insulating material in the gate contact region, and depositing a gate contact between the pair of pillars to be in electrical contact with the gate material such that the spacer surrounds the gate contact. | 2013-10-24 |
20130277640 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A non-volatile semiconductor memory device includes a cell array layer including a first wire, one or more memory cells stacked on the first wire, and a second wire formed on the memory cell so as to cross the first wire, wherein the memory cell includes a current rectifying element and a variable resistance element, and an atomic composition ratio of nitrogen is higher than that of oxygen in a part of a sidewall of the current rectifying element. | 2013-10-24 |
20130277641 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FLIP CHIP PACKAGE DEVICE - A semiconductor light emitting device including a first type doped semiconductor layer, a light emitting layer, a second type doped semiconductor layer, and a reflection layer is provided. The first type doped semiconductor layer has a mesa portion and a depression portion. The light emitting layer is disposed on the mesa portion and has a first surface, a second surface and a first side surface connecting the first surface with the second surface. The second type doped semiconductor layer is disposed on the light emitting layer and has a third surface, a fourth surface and a second side surface connecting the third surface with the fourth surface. Observing from a viewing direction parallel to the light emitting layer, the reflection layer covers at least part of the first side surface and at least part of the second side surface. A flip chip package device is also provided. | 2013-10-24 |
20130277642 | UV LED WITH TUNNEL-INJECTION LAYER - An ultraviolet (UV) light emitting structure, a UV light emitting device, and a method of making a UV light emitting structure or device, wherein the UV light emitting structure or device has an AlN or AlGaN injection layer with high aluminum content between the light emitting active region and the p-doped layers and wherein the injection layer has a thickness such that holes can tunnel from the p-side of the semiconductor-based ultraviolet light emitting diode structure through the injection layer in the active zone and also reducing leakage electrons out of the active zone. | 2013-10-24 |
20130277643 | QUANTUM DOT CONTAINING OPTICAL ELEMENT - An illumination device including a light source positioned at the distal end of a reflecting unit and a heat sink light transmissive substrate including quantum dots positioned at the proximal end of the reflecting unit with the reflecting unit having one or more reflecting side walls and a reflecting bottom wall and with the light source being separated a distance from the light transmissive substrate including quantum dots. In certain embodiments, the light source is an LED. | 2013-10-24 |
20130277644 | GRAPHENE SWITCHING DEVICE INCLUDING TUNABLE BARRIER - A graphene switching device includes a first electrode and an insulating layer in first and second regions of the semiconductor substrate, respectively, a plurality of metal particles on a surface of the semiconductor substrate between the first and second regions, a graphene layer on the plurality of metal particles and extending on the insulating layer, a second electrode on the graphene layer in the second region and configured to face the insulating layer, a gate insulating layer configured to cover the graphene layer, and a gate electrode on the gate insulating layer. The semiconductor substrate forms an energy barrier between the graphene layer and the first electrode. | 2013-10-24 |
20130277645 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND MANUFACTURING METHOD THEREOF - A manufacturing method of an organic light emitting diode (OLED) display according to an exemplary embodiment includes: forming a thin film transistor panel; forming a deposition mask on the thin film transistor panel by a photolithography process; obliquely spraying an organic material to the deposition mask from a linear deposition source to form an organic emission layer on the thin film transistor panel; and removing the deposition mask by using an adhering film, wherein the deposition mask includes a plurality of deposition walls configured to block the organic material sprayed at an angle that is less than a blocking angle. Accordingly, the deposition mask is formed by the photolithography process such that alignment of the deposition mask is straightforward when manufacturing the organic light emitting diode (OLED) display of a large size. | 2013-10-24 |
20130277646 | DISPLAY PANEL AND DISPLAY DEVICE - According to one embodiment, a display panel includes a substrate, a switching element, a pixel electrode, an organic light emitting layer, an opposite electrode, a detecting electrode, and an insulating layer. The substrate has a major surface. The switching element is provided on the major surface. The switching element includes a semiconductor layer. The pixel electrode is provided on the major surface. The pixel electrode is electrically connected to the switching element. The organic light emitting layer is provided on the pixel electrode. The opposite electrode is provided on the organic light emitting layer. The detecting electrode is provided between the substrate and at least a part of the pixel electrode. The detecting electrode includes at least one element included in the semiconductor layer. The insulating layer is provided between the pixel electrode and the detecting electrode. | 2013-10-24 |
20130277647 | OLED DISPLAY DEVICE AND METHOD FOR FABRICATING THE SAME - An OLED display device is provided, which includes a first substrate, an OLED layer, a first blocking material, a second substrate, and a second blocking material. The first substrate has a first lateral surface, and the second substrate has a second lateral surface. The OLED layer is disposed between the first and second substrates. The first blocking material is disposed at a peripheral region of the OLED layer to connect the first and second substrates. The second blocking material is disposed on the first and second lateral surface and covers a gap between the first and second lateral surfaces. | 2013-10-24 |
20130277648 | IMAGE DISPLAY SYSTEM - An image display system employing an organic electroluminescent device is provided. The organic electroluminescent device includes a substrate; a first electrode formed on the substrate; a first emitting layer formed on the first electrode, wherein the first emitting layer emits a first color of light, and a second color of light; a second electrode formed on the first emitting layer, wherein the second color of light emitted by the first emitting layer generates a first standing wave within the organic electroluminescent device, and the first emitting layer is disposed at an antinode of the first standing wave, such that the intensity of the second color of light is enhanced, and the second color of light is mixed with the first color of light to produce a white emission. | 2013-10-24 |
20130277649 | ORGANIC ELECTRONIC DEVICE STRUCTURES AND FABRICATION METHODS - An organic electronic device structure, the structure comprising: a substrate; a base layer supported by said substrate and defining the base of a well for solvent-based deposition of organic electronic material; one or more spacer layers formed over said base layer; a bank layer formed over said spacer layer to define a side of said well; and wherein an edge of said well adjacent said base layer is undercut to define a shelf over said base layer, said shelf defining a recess to receive said organic electronic material. | 2013-10-24 |
20130277650 | SIGNAL TRANSMISSION UNIT, DISPLAY UNIT, AND ELECTRONIC APPARATUS - An electronic apparatus (for example a display unit) including an active region (for example a display region) and a peripheral region. In the active region are disposed: active units (for example pixel circuit), a first wiring line connected to an active unit, a second wiring line connected to an active unit, and a third wiring line disposed in a different layer than the second wiring line and connected to the second wiring line. The first wiring line and the third wiring line extend out of the active region into the peripheral region, and exit the display region on a same side of the display region. A first peripheral circuit for communicating with the first wiring line and a second peripheral circuit for communicating with the second wiring line are disposed in the peripheral region, and the third wiring line is connected to the second peripheral circuit. | 2013-10-24 |
20130277651 | Vertical Organic Transistor and Production Method - The invention relates to a vertical organic transistor on a substrate having an electrode ( | 2013-10-24 |
20130277652 | Composite Material Including Organic Compound and Inorganic Compound, Light-Emitting Element and Light-Emitting Device Using the Composite Compound, and Manufacturing Method of the Light-Emitting Element - The present invention provides a composite material having high conductivity, a light-emitting element and a light-emitting device using the composite material. Further, the present invention provides a manufacturing method of a light-emitting element which is suitable for mass production. A light-emitting element of the present invention includes a layer including a luminescent substance between a pair of electrodes. The layer including a luminescent substance has a composite material which includes an organic compound, and an inorganic compound showing an electron donating property to the organic compound. Since the light-emitting element of the present invention includes a composite material made by combining an organic compound and an inorganic compound, the carrier injecting property, carrier transporting property, and conductivity thereof are excellent, and thus, the driving voltage can be reduced. | 2013-10-24 |
20130277653 | Organic Compound, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - A novel organic compound with which the emission characteristics, emission efficiency, and reliability of a light-emitting element can be improved; a light-emitting element including the organic compound; and a light-emitting device, an electronic device, and a lighting device each including the light-emitting element. The light-emitting element includes a hole-transport layer and a light-emitting layer between a pair of electrodes. At least one of the hole-transport layer and the light-emitting layer includes an organic compound having a skeleton represented by General Formula (G0). | 2013-10-24 |
20130277654 | Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Device, and Lighting Device - An object is to provide a light-emitting element which uses a plurality of kinds of light-emitting dopants and has high emission efficiency. In one embodiment of the present invention, a light-emitting device, a light-emitting module, a light-emitting display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. Attention is paid to Förster mechanism, which is one of mechanisms of intermolecular energy transfer. Efficient energy transfer by Förster mechanism is achieved by making an emission wavelength of a molecule which donates energy overlap with the longest-wavelength-side local maximum peak of a graph obtained by multiplying an absorption spectrum of a molecule which receives energy by a wavelength raised to the fourth power. | 2013-10-24 |
20130277655 | Light-Emitting Element, Light-Emitting Device, Electronic Appliance, and Lighting Device - A light-emitting element which has low driving voltage and high emission efficiency is provided. The light-emitting element includes, between a pair of electrodes, a hole-transport layer and a light-emitting layer over the hole-transport layer. The light-emitting layer contains a first organic compound having an electron-transport property, a second organic compound having a hole-transport property, and a light-emitting third organic compound converting triplet excitation energy into light emission. A combination of the first organic compound and the second organic compound forms an exciplex. The hole-transport layer contains at least a fourth organic compound whose HOMO level is lower than or equal to that of the second organic compound and a fifth organic compound whose HOMO level is higher than that of the second organic compound. | 2013-10-24 |
20130277656 | Light-Emitting Element, Light-Emitting Device, Electronic Appliance, and Lighting Device - A light-emitting element which has low driving voltage and high emission efficiency is provided. The light-emitting element includes, between a pair of electrodes, a hole-transport layer and a light-emitting layer over the hole-transport layer. The light-emitting layer contains a first organic compound having an electron-transport property, a second organic compound having a hole-transport property, and a light-emitting third organic compound converting triplet excitation energy into light emission. A combination of the first organic compound and the second organic compound forms an exciplex. The hole-transport layer is formed using two or more kinds of organic compounds and contains at least the second organic compound. | 2013-10-24 |
20130277657 | FUSED POLYCYCLIC HETEROAROMATIC COMPOUND, ORGANIC THIN FILM INCLUDING THE COMPOUND AND ELECTRONIC DEVICE INCLUDING THE ORGANIC THIN FILM - A low-molecular-weight fused polycyclic heteroaromatic compound, an organic thin film and an electronic device including the fused polycyclic heteroaromatic compound, include a compact planar structure in which six or more rings are fused together, and thereby exhibits high charge mobility, and furthermore, enables the use of a deposition process or a room-temperature solution process when applied to devices, therefore realizing improved processibility. | 2013-10-24 |
20130277658 | PROCESSING ADDITIVE FOR SINGLE-COMPONENT SOLUTION PROCESSED ORGANIC FIELD-EFFECT TRANSISTORS - Methods and compositions to improve the performance of single-component polymer FETs is provided comprising processing a conjugated polymer in the presence of a processing additive. Also provided is a FET device fabricated with a processing additive. Such devices have increased saturation hole and/or electron mobility compared to a control FETs. | 2013-10-24 |
20130277659 | DISPLAY DEVICE - A display device includes an array of pixels including a plurality of organic EL elements each having a pair of electrodes and an organic compound layer including a light-emitting layer and disposed between the pair of electrodes and includes a protective layer disposed on the plurality of the organic EL elements. The protective layer has a first protective layer made of an inorganic material, a second protective layer made of a resin material and disposed on the first protective layer, and a third protective layer made of an inorganic material and disposed on the second protective layer. The second protective layer includes lenses for diverging at least part of light emitted from the light-emitting layer. The lenses have an elongated concave shape. | 2013-10-24 |
20130277660 | THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME - An oxide semiconductor thin film transistor and a flat panel display device incorporating the same oxide semiconductor thin film transistor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulating layer formed on the substrate and covering the gate electrode, an oxide semiconductor layer formed on the gate insulating layer and covering the gate electrode, a titanium layer formed in a source region and a drain region of the oxide semiconductor layer, and source and drain electrodes respectively coupled to the source region and the drain region through the titanium layer and made of copper. The titanium layer reduces the contact resistance between the source and drain electrodes made of copper and the oxide semiconductor layer, forms a stable interface junction therebetween, and blocks a diffusion of copper. | 2013-10-24 |
20130277661 | FIELD-EFFECT TRANSISTOR, PROCESS FOR PRODUCING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME - The invention relates to a bottom-contact type field-effect transistor which comprises: a substrate; a source electrode | 2013-10-24 |
20130277662 | ORGANIC LIGHT-EMITTING DEVICE, LIGHT SOURCE DEVICE USING SAME, ORGANIC LIGHT-EMITTING LAYER MATERIAL, COATING LIQUID FOR FORMING ORGANIC LIGHT-EMITTING LAYER, AND METHOD FOR PRODUCING ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes a lower electrode, an upper electrode, and an organic layer disposed between these electrodes. The organic layer is a laminate of a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. The light-emitting layer includes a host and a first dopant. The hole transport layer includes a hole transporting material, and the electron transport layer includes an electron transporting material. The hole transporting material and the electron transporting material have functional groups. The first dopant in the light-emitting layer has a functional group, and is concentrated on the side of the light-emitting layer in contact with the hole transport layer or the electron transport layer. | 2013-10-24 |
20130277663 | METHOD FOR PRODUCING ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC DISPLAY PANEL, ORGANIC LIGHT-EMITTING DEVICE, METHOD FOR FORMING FUNCTIONAL LAYER, INK, SUBSTRATE, ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC DISPLAY DEVICE, AND INKJET DEVICE - To provide a method of efficiently manufacturing an organic light-emitting element with excellent light-emitting characteristics by application, the method includes: preparing ink and filling an inkjet device having an ink ejection nozzle with the ink; preparing a substrate having a base layer including a first electrode; and positioning the inkjet device above the substrate, and causing the inkjet device to eject a drop of the ink onto the base layer, wherein, in the preparation of the ink, a value Z denoting a reciprocal of the Ohnesorge number Oh determined by density ρ (g/m | 2013-10-24 |
20130277664 | MICROSTRUCTURE FOR LIGHT-EMITTING ELEMENT, AND LIGHT-EMITTING ELEMENT AND ILLUMINATION DEVICE INCLUDING MICROSTRUCTURE - A microstructure for electroluminescent (EL) elements comprises a plurality of microconvexities having circular bottom surfaces. Each microconvexity is defined by a generatrix dropped from the peak to the circumference of the bottom surface. The height of the generatrix is monotonically reduced from the peak to the circumference. The height of the peak may be 0.67-1.15 times the radius of the bottom surface. The height of the convexities at a position on the radius of the bottom surface 3/4 away from the center of the bottom surface may be 0.21-0.65 times the radius of the bottom surface. The height of the convexities at a position on the radius of the bottom surface 9/10 away from the center of the bottom surface may be 0.04-0.38 times the radius of the bottom surface. | 2013-10-24 |
20130277665 | ORGANIC EL ELEMENT AND METHOD FOR MANUFACTURING SAME - An organic EL element comprises: a substrate; a first electrode formed at one surface side of the substrate; a second electrode opposing the first electrode; and an organic EL layer located between the first and second electrodes. In the organic EL element, the second electrode is a transparent electrode, and the first electrode is a reflecting electrode. The organic EL element is a top-emission type. The first electrode comprises a plurality of nanometer-size (nanometer-order) columnar structures formed on the above-mentioned one surface of the substrate, and each of the plurality of columnar structures has a metallic surface as the outermost surface. | 2013-10-24 |
20130277666 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL, AND METHOD OF MANUFACTURING A THIN FILM TRANSISTOR ARRAY PANEL - A thin film transistor array panel according to an exemplary embodiment of the invention includes: a substrate; a gate line positioned on the substrate and including a gate electrode; a gate insulating layer positioned on the gate line; an oxide semiconductor layer positioned on the substrate; a source electrode and a drain electrode positioned on the oxide semiconductor layer; a first insulating layer positioned on the source electrode and the drain electrode and including a first contact hole; a data line positioned on the first insulating layer and intersecting the gate line; and a pixel electrode over the first insulating layer. The source electrode and the drain electrode each comprise a metal oxide. The data line is electrically connected to the source electrode through the first contact hole. | 2013-10-24 |
20130277667 | DISPLAY DEVICE - According to one embodiment, a display device includes a light transmissive substrate, a light transmissive pixel electrode, a switching element, an organic light emitting layer, a light transmissive opposite electrode, a conductive light absorption layer and a conductive film. The light transmissive pixel electrode is provided on the substrate. The switching element is provided on the substrate and electrically connected to the pixel electrode. The organic light emitting layer is provided on the pixel electrode. The light transmissive opposite electrode is provided on the organic light emitting layer. The conductive light absorption layer is provided on the opposite electrode. The conductive film is provided on the light absorption layer. | 2013-10-24 |
20130277668 | ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - An array substrate including a substrate including a pixel region; a gate line on the substrate; a gate electrode on the substrate and connected to the gate line; a gate insulating layer on the gate line and the gate electrode; a data line on the gate insulating layer and crossing the gate line to define the pixel region; a source electrode and a drain electrode on the gate insulating layer and corresponding to the gate electrode, the source electrode connected to the data line and the drain electrode spaced apart from the source electrode; and an oxide semiconductor layer on top of the source and drain electrodes. | 2013-10-24 |
20130277669 | ELECTRON TRANSPORT LAYER - The present invention provides: a method of preparing a coating ink for forming a zinc oxide electron transport layer, comprising mixing zinc acetate and a wetting agent in water or methanol; a coating ink comprising zinc acetate and a wetting agent in aqueous solution or methanolic solution; a method of preparing a zinc oxide electron transporting layer, which method comprises: i) coating a substrate with the coating ink of the present invention to form a film; ii) drying the film; and iii) heating the dry film to convert the zinc acetate substantially to ZnO; a method of preparing an organic photovoltaic device or an organic LED having a zinc oxide electron transport layer, the method comprising, in this order: a) providing a substrate bearing a first electrode layer; b) forming an electron transport layer according to the following method: i) coating a coating ink comprising an ink according to the present invention to form a film; ii) drying the film; iii) heating the dry film such that the zinc acetate is substantially converted to ZnO; c) forming an active layer; d) forming a hole transport layer; and e) forming a second electrode layer; and an optoelectronic device comprising an electron transporting layer comprising zinc oxide and a wetting agent. | 2013-10-24 |
20130277670 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A variation in electrical characteristics, such as a negative shift of the threshold voltage or an increase in S value, of a fin-type transistor including an oxide semiconductor material is prevented. An oxide semiconductor film is sandwiched between a plurality of gate electrodes with an insulating film provided between the oxide semiconductor film and each of the gate electrodes. Specifically, a first gate insulating film is provided to cover a first gate electrode, an oxide semiconductor film is provided to be in contact with the first gate insulating film and extend beyond the first gate electrode, a second gate insulating film is provided to cover at least the oxide semiconductor film, and a second gate electrode is provided to be in contact with part of the second gate insulating film and extend beyond the first gate electrode. | 2013-10-24 |
20130277671 | SEMICONDUCTOR DEVICE - An object is to provide a highly reliable transistor and a semiconductor device including the transistor. A semiconductor device including a gate electrode; a gate insulating film over the gate electrode; an oxide semiconductor film over the gate insulating film; and a source electrode and a drain electrode over the oxide semiconductor film, in which activation energy of the oxide semiconductor film obtained from temperature dependence of a current (on-state current) flowing between the source electrode and the drain electrode when a voltage greater than or equal to a threshold voltage is applied to the gate electrode is greater than or equal to 0 meV and less than or equal to 25 meV, is provided. | 2013-10-24 |
20130277672 | AMORPHOUS OXIDE AND FIELD EFFECT TRANSISTOR - A novel amorphous oxide applicable, for example, to an active layer of a TFT is provided. The amorphous oxide comprises microcrystals. | 2013-10-24 |
20130277673 | ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - A method of fabricating an array substrate and a display device including the array substrate are discussed. According to an embodiment, the array substrate includes a gate electrode formed on a substrate; a gate insulating layer formed on the gate electrode; an oxide semiconductor layer and an etch prevention layer formed on the gate insulating layer, wherein ends of the oxide semiconductor layer and ends of the etch prevention layer are aligned with each other; source and drain electrodes formed on the etch prevention layer; a passivation layer including a contact hole formed on the source and drain electrodes and on the gate insulating layer; and a pixel electrode formed on the passivation layer and through the contact hole. | 2013-10-24 |
20130277674 | DISPLAY PANEL - A display panel includes an insulation substrate having a display area and a peripheral area, wires disposed on the insulation substrate in the display area, first and second testing lines disposed on the insulation substrate and aligned substantially parallel to each other, and a diode unit disposed between the wires and one of the first testing line and the second testing line. The wires extend from the display area into the peripheral area and through diodes included in the diode unit, and the wires are electrically connected to the one of the first testing line and the second testing line. | 2013-10-24 |
20130277675 | SOI WAFER, MANUFACTURING METHOD THEREFOR, AND MEMS DEVICE - In order to obtain a SOI wafer having an excellent ability of gettering metal impurities, an efficient method of manufacturing a SOI wafer, and a highly reliable MEMS device using such a SOI wafer, provided is a SOI wafer including: a support wafer ( | 2013-10-24 |
20130277676 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To give stable electrical characteristics to and improve reliability of a semiconductor device including a transistor in which an oxide semiconductor film is used for a channel formation region. As a base film, an insulating film or an oxide semiconductor film is used. A single-layer metal film is formed over the base film. After that, a resist mask is formed, and etching is performed plural times. Accordingly, electrodes each including projecting portions when seen in cross-section are formed. Even when a gate insulating film over the source electrode layer and the drain electrode layer or an oxide semiconductor film has a small thickness, disconnection of the gate insulating film is unlikely to occur. | 2013-10-24 |
20130277677 | METHOD FOR FORMING POLYCRYSTALLINE FILM, POLYCRYSTALLINE FILM AND THIN FILM TRANSISTOR FABRICATED FROM THE POLYCRYSTALLINE FILM - A method for forming a polycrystalline film, a polycrystalline film formed by the method and a thin film transistor fabricated from the polycrystalline film are provided. The method comprises the steps of: providing a substrate; forming a thermal conductor layer on the substrate; etching the thermal conductor layer until the substrate is exposed to form a thermal conductor pattern; forming a seed layer on the thermal conductor layer and the substrate; etching the seed layer to form seed crystals on both sidewalls of the thermal conductor; forming an amorphous layer on the substrate, the thermal conductor layer and the seed crystals; etching the amorphous layer; and recrystallizing the amorphous layer to form a polycrystalline layer. | 2013-10-24 |
20130277678 | THIN-FILM SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A thin-film semiconductor device manufacturing method according to the present disclosure includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating film above the substrate; forming an amorphous film (amorphous silicon film) above the substrate; forming a crystalline film (crystalline silicon film) including a first crystal and a second crystal, by crystallizing the amorphous film, the first crystal (i) containing subgrains formed with different crystal orientations in a single crystal and (ii) including a subgrain boundary formed by plural crystal planes between the subgrains, the second crystal having an average crystal grain size smaller than an average crystal grain size of the first crystal; thinning the crystalline film; and forming a source electrode and a drain electrode above the substrate. | 2013-10-24 |
20130277679 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A high performance electric device which uses an adhesive layer over a substrate. A color filter is over a substrate, and an adhesive layer is also located over the substrate and color film. An insulating layer is over the adhesive layer, and thin film transistors cover the insulating film and the color filters. Light emitting elements cover the thin film transistors and emit light through the substrate that is through the adhesive layer and color filter. The substrate may be plastic, thus increasing the heat resistance. | 2013-10-24 |
20130277680 | High Speed Gallium Nitride Transistor Devices - A low leakage current switch device ( | 2013-10-24 |
20130277681 | LIGHT-EMITTING DEVICE - A light-emitting device includes a case including a first substrate and a sidewall on the first substrate, a light-emitting, element that is mounted on the first substrate in a region surrounded by the sidewall and includes a second substrate and a crystal layer, the light-emitting element being formed rectangular in a plane viewed in a direction perpendicular to the first substrate, and a low-refractive-index layer that is located between the light-emitting element and the sidewall and has a smaller refractive index than the second substrate. A side surface along a longitudinal direction of the second substrate is provided with a tapered portion on a side of the first substrate. | 2013-10-24 |
20130277682 | LIGHT EMITTING ELEMENT WITH A PLURALITY OF CELLS BONDED, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE USING THE SAME - The present invention relates to a light emitting device, including a conductive substrate, vertical light emitting cells arranged on the conductive substrate, an insulating layer interposed between the conductive substrate and the vertical light emitting cells, and a wire electrically connecting the vertical light emitting cells. | 2013-10-24 |
20130277683 | NON-PLANAR III-N TRANSISTOR - Transistors for high voltage and high frequency operation. A non-planar, polar crystalline semiconductor body having a top surface disposed between first and second opposite sidewalls includes a channel region with a first crystalline semiconductor layer disposed over the first and second sidewalls. The first crystalline semiconductor layer is to provide a two dimensional electron gas (2DEG) within the channel region. A gate structure is disposed over the first crystalline semiconductor layer along at least the second sidewall to modulate the 2DEG. First and second sidewalls of the non-planar polar crystalline semiconductor body may have differing polarity, with the channel proximate to a first of the sidewalls. The gate structure may be along a second of the sidewalls to gate a back barrier. The polar crystalline semiconductor body may be a group III-nitride formed on a silicon substrate with the (10 | 2013-10-24 |
20130277684 | NITRIDE SEMICONDUCTOR STRUCTURE, NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT, NITRIDE SEMICONDUCTOR TRANSISTOR ELEMENT, METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR STRUCTURE, AND METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR ELEMENT - A nitride semiconductor structure in which a first nitride semiconductor underlying layer is provided on a substrate having a recess portion and a projection portion provided between the recess portions at a surface thereof, the first nitride semiconductor underlying layer has at least 6 first oblique facet planes surrounding the projection portion on an outer side of the projection portion, and a second nitride semiconductor underlying layer buries the first oblique facet planes, a nitride semiconductor light emitting element, a nitride semiconductor transistor element, a method of manufacturing a nitride semiconductor structure, and a method of manufacturing a nitride semiconductor element are provided. | 2013-10-24 |
20130277685 | SOI TRANSISTORS WITH IMPROVED SOURCE/DRAIN STRUCTURES WITH ENHANCED STRAIN - A transistor structure with improved device performance, and a method for forming the same is provided. The transistor structure is an SOI (silicon-on-insulator) transistor. In one embodiment, a silicon layer over the oxide layer is a relatively uniform film and in another embodiment, the silicon layer over the oxide layer is a silicon fin. The transistor devices include source/drain structures formed of a strain material that extends through the silicon layer, through the oxide layer and into the underlying substrate which may be silicon. The source/drain structures also include portions that extend above the upper surface of the silicon layer thereby providing an increased volume of the strain layer to provide added carrier mobility and higher performance. | 2013-10-24 |
20130277686 | Semiconductor Structure with Metal Gate and Method of Fabricating the Same - A metal gate process comprises the steps of providing a substrate, forming a dummy gate on said substrate, forming dummy spacers on at least one of the surrounding sidewalls of said dummy gate, forming a source and a drain respectively in said substrate at both sides of said dummy gate, performing a replacement metal gate process to replace said dummy gate with a metal gate, removing said dummy spacers, and forming low-K spacers to replace said dummy spacers. | 2013-10-24 |
20130277687 | HIGH VOLTAGE FIELD EFFECT TRANSITOR FINGER TERMINATIONS - A field effect transistor having at least one structure configured to redistribute and/or reduce an electric field from gate finger ends is disclosed. Embodiments of the field effect transistor include a substrate, an active region disposed on the substrate, at least one source finger in contact with the active region, at least one drain finger in contact with the active region, and at least one gate finger in rectifying contact with the active region. One embodiment has at least one end of the at least one gate finger extending outside of the active region. Another embodiment includes at least one source field plate integral with the at least one source finger. The at least one source field plate extends over the at least one gate finger that includes a portion outside of the active region. Either embodiment can also include a sloped gate foot to further improve high voltage operation. | 2013-10-24 |
20130277688 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device of the present invention includes a semiconductor layer composed of SiC, a metal layer directly bonded to one face of the semiconductor layer, and a high carbon concentration layer formed on a surface layer portion at one side of the semiconductor layer and containing more highly concentrated carbon than a surface layer portion of the other side. Further, a manufacturing method of a semiconductor device of the present invention includes the steps of forming, on a surface layer portion at one face side of a semiconductor layer composed of SiC, a high carbon concentration layer containing more highly concentrated carbon than a surface layer portion at the other face side by heat treatment and directly bonding metal to the high carbon concentration layer. | 2013-10-24 |
20130277689 | NIGHT VISION IMAGING SYSTEM (NVIS) COMPATIBLE LIGHT EMITTING DIODE - The present disclosure is directed to an LED assembly that is compatible for use with a night vision imaging system or any other system that requires an LED with specific transmission or rejection wavelength bands. Such LEDs may emit selective wavelength bands anywhere between 400 nm and 700 nm of the electromagnetic spectrum while limiting selective wavelength bands anywhere between 700 and 1200 nanometers. In one embodiment, the LED is manufactured by coating one or more inorganic thin film optical coatings onto the LED and then protecting the LED and thin film optical coating with a resin encapsulant. In other embodiments, additional near infrared photochemical or color correcting dyes are incorporated directly into the encapsulant. | 2013-10-24 |
20130277690 | LOW PROFILE LIGHTING MODULE - A low profile lighting module. Devices according to this disclosure can produce a uniform light intensity output profile, limiting the perceived appearance of individual point sources, from direct lighting modules comprising several light emitting diodes. Individual lighting device components are disclosed that can contribute to this uniform profile, including: primary optics, secondary optics, and contoured housing elements. These components can interact with and control emitted light, thus adjusting its pattern. These components can alter the direction of emitted light, providing a more uniform light intensity over a wider range of viewing angle. | 2013-10-24 |
20130277691 | DISPLAY DEVICE - A display device in which various embodiments can prevent a vertically-striped blur is disclosed. In one aspect, the display device includes first gate lines, second gate lines, data lines, dummy data lines, and a plurality of pixels. The first and second gate lines are extended in a first direction. The data lines and the dummy data lines are extended in a second direction intersecting the first direction. The pixels are defined by the intersection of a first gate line of the first gate lines and a first data line of the data lines. | 2013-10-24 |
20130277692 | STACKED LED DEVICE WITH DIAGONAL BONDING PADS - A semiconductor light emitting device includes a substrate and a first epitaxial structure over the substrate. The first epitaxial structure includes a first doped layer, a first light emitting layer, and a second doped layer. A first electrode is coupled to the first doped layer. A second electrode is coupled to the second doped layer facing the same direction as the first electrode. A second epitaxial structure includes a third doped layer, a second light emitting layer, and a fourth doped layer. A third electrode is coupled to the third doped layer facing the same direction as the first electrode. A fourth electrode is coupled to the fourth doped layer facing the same direction as the first electrode. An adhesive layer is between the first epitaxial structure and the second epitaxial structure. | 2013-10-24 |
20130277693 | LIGHT EMITTING DIODE (LED) COMPONENT WITH HIGH SIGNAL-TO-NOISE RATIO - The invention relates to a light emitting diode (LED) component that is assembled with a plurality of LED chips, incorporating luminescence conversion element and is characterized by a wide color spectrum ranging from 400 nm to 680 nm and has a high signal-to-noise ratio for each of the peak wavelength in the spectrum. | 2013-10-24 |
20130277694 | SEMICONDUCTOR LIGHT-EMITTING DEVICE, EXHIBIT-IRRADIATING ILLUMINATION DEVICE, MEAT-IRRADIATING ILLUMINATION DEVICE, VEGETABLE-IRRADIATING ILLUMINATION DEVICE, FRESH FISH-IRRADIATING ILLUMINATION DEVICE, GENERAL-PURPOSE ILLUMINATION DEVICE, AND SEMICONDUCTOR LIGHT-EMITTING SYSTEM - The present invention provides a semiconductor light-emitting device which emits light with high chroma, and an exhibit-irradiating illumination device, a meat-irradiating illumination device, a vegetable-irradiating illumination device, a fresh fish-irradiating illumination device, a general-purpose illumination device, and a semiconductor light-emitting system which include the semiconductor light-emitting device. A semiconductor light-emitting device | 2013-10-24 |
20130277695 | LUMINOUS BODY WITH LED DIEs AND PRODUCTION THEREOF - A luminous body comprises a transparent plastic moulding with indentations, and LED DIEs disposed within the indentations. One side of each LED DIE lies approximately flush with an upper side of the moulding, and each LED DIE is connected to an electricity supply via electrical conductors disposed on the moulding. A method for producing such a luminous body is also disclosed. | 2013-10-24 |
20130277696 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING ELEMENT UNIT, AND LIGHT-EMITTING ELEMENT PACKAGE - In a light-emitting element | 2013-10-24 |
20130277697 | LIGHT EMITTING DIODE DEVICE - A light emitting diode device includes an epitaxial substrate, at least one passivation structure, at least one void, a semiconductor layer, a first type doping semiconductor layer, a light-emitting layer and a second type doping semiconductor layer. The passivation structure is disposed on the epitaxial substrate and has an outer surface. The void is located at the passivation structure and at least covering 50% of the outer surface of the passivation structure. The semiconductor layer is disposed on the epitaxial substrate and encapsulating the passivation structure and the void. The first type doping semiconductor layer is disposed on the semiconductor layer. The light-emitting layer is disposed on the first type doping semiconductor layer. The second type doping semiconductor layer is disposed on the light emitting layer. | 2013-10-24 |
20130277698 | LIGHT-EMITTING DEVICE - There is realized a light-emitting device that emits, with high efficiency, white light with excellent color rendering index. A light-emitting device ( | 2013-10-24 |
20130277699 | PATTERN SUBSTRATE STRUCTURE FOR LIGHT EMITTING ANGLE CONVERGENCE AND LIGHT EMITTING DIODE DEVICE USING THE SAME - The present invention provides a pattern substrate structure for light emitting angle convergence and a light emitting diode device using the same. The pattern substrate structure has a plurality of enclosed geometric regions defined by at least three stripe-shaped parts on a substrate to provide the light reflection effect through the uneven surface of the substrate and thereby converge the light emitting angle of the light emitting diode element into 100˜110 degrees. Therefore, the illuminant efficiency of the light emitting diode device using the pattern substrate structure is substantially raised because of the improved directivity. | 2013-10-24 |
20130277700 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - To provide a semiconductor light emitting element of which color irregularity is improved, the semiconductor light emitting element according to the present invention comprises: a support substrate; a semiconductor laminated structural body provided on the support substrate, the semiconductor laminated structural body having a first semiconductor layer, a luminescent layer, and a second semiconductor layer; a first electrode electrically connected to the first semiconductor layer; a second electrode electrically connected to the second semiconductor layer; a light shielding member covering a portion of an upper surface and side surfaces of the semiconductor laminated structural body, the light shielding member electrically separated from both of the first electrode and the second electrode; and a wavelength conversion member covering an upper surface not covered by the light shielding member of the semiconductor laminated structural body. | 2013-10-24 |