42nd week of 2021 patent applcation highlights part 66 |
Patent application number | Title | Published |
20210328061 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - The present invention provides a thin film transistor and a manufacturing method thereof. The thin film transistor includes a substrate, a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode and a drain electrode, and a passivation layer. Both structures of the source electrode and the drain electrode are a three-layered metal structure, and the three-layered metal structure is a titanium tantalum/copper/titanium tantalum structure. Therefore, after the passivation layer is applied to the source electrode and the drain electrode, a bulging problem of the passivation layer can be effectively improved, and thus the thin film transistor has better plasticity and can be used for flexible displays. | 2021-10-21 |
20210328062 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR SYSTEM INCLUDING SEMICONDUCTOR DEVICE - A semiconductor device including at least one inversion channel region includes an oxide semiconductor film containing a crystal that has a corundum structure at the inversion channel region. | 2021-10-21 |
20210328063 | ULTRA HIGH-DENSITY MEMORY AND MULTI-LEVEL MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - Provided is a memory device. The memory device includes: a substrate; a gate insulating film disposed on the substrate; a ferroelectric thin film disposed on the gate insulating film; a blocking film disposed on the ferroelectric thin film; and a gate pattern disposed on the blocking film, wherein the ferroelectric thin film includes a spacer having a fixed polarization regardless of an electric field that is applied from an outside, and a ferroelectric domain having a polarization controlled by the electric field that is applied from the outside, and a plurality of spacers and a plurality of ferroelectric domains are alternately and repeatedly provided in a direction parallel to a top surface of the substrate (in a b-lattice direction). | 2021-10-21 |
20210328064 | SELECTIVE INTERNAL GATE STRUCTURE FOR FERROELECTRIC SEMICONDUCTOR DEVICES - The present disclosure relates to a semiconductor device including a substrate and first and second spacers on the substrate. The semiconductor device also includes a gate stack between the first and second spacers. The gate stack includes a gate dielectric layer having a first portion formed on the substrate and a second portion formed on the first and second spacers; an internal gate formed on the first and second portions of the gate dielectric layer; a ferroelectric dielectric layer formed on the internal gate and in contact with the gate dielectric layer; and a gate electrode on the ferroelectric dielectric layer. | 2021-10-21 |
20210328065 | FERROELECTRIC STRUCTURE FOR SEMICONDUCTOR DEVICES - The present disclosure relates to a semiconductor device includes a substrate and first and second spacers on the substrate. The semiconductor device includes a gate stack between the first and second spacers. The gate stack includes a gate dielectric layer having a first portion formed on the substrate and a second portion formed on the first and second spacers. The first portion includes a crystalline material and the second portion comprises an amorphous material. The gate stack further includes a gate electrode on the first and second portions of the gate dielectric layer. | 2021-10-21 |
20210328066 | THIN FILM TRANSISTOR, DISPLAY SUBSTRATE, DISPLAY PANEL, AND METHOD OF FABRICATING A THIN FILM TRANSISTOR - The present application provides a thin film transistor having an active layer. The active layer includes a source electrode contact part, a drain electrode contact part, and a channel part between the source electrode contact part and the drain electrode contact part. The channel part includes at least a first portion and a second portion different from the first portion. The second portion has an enhanced ability to capture off-state leaking carriers as compared to the first portion. | 2021-10-21 |
20210328067 | DOPED POLAR LAYERS AND SEMICONDUCTOR DEVICE INCORPORATING SAME - The disclosed technology generally relates to ferroelectric materials and semiconductor devices, and more particularly to semiconductor memory devices incorporating doped polar materials. In one aspect, a semiconductor device comprises a capacitor which in turn comprises a polar layer comprising a base polar material doped with a dopant. The base polar material includes one or more metal elements and one or both of oxygen or nitrogen. The dopant comprises a metal element that is different from the one or more metal elements and is present at a concentration such that a ferroelectric switching voltage of the capacitor is different from that of the capacitor having the base polar material without being doped with the dopant by more than about 100 mV. The capacitor stack additionally comprises first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. The capacitor stack further comprises first and second barrier metal layers on respective ones of the first and second crystalline conductive oxide electrodes on opposing sides of the polar layer. | 2021-10-21 |
20210328068 | LOCALIZED HEATING IN LASER ANNEALING PROCESS - A method of forming a semiconductor device includes forming source/drain contact openings extending through at least one dielectric layer to expose source/drain contact regions of source/drain structures. The method further includes forming conductive plugs in the source/drain contact openings. The method further includes depositing a light blocking layer over the conductive plugs and the at least one dielectric layer. The method further includes etching the light blocking layer to expose the conductive plugs. The method further includes directing a laser irradiation to the conductive plugs and the light blocking layer. The laser irradiation is configured to activate dopants in the source/drain contact regions. | 2021-10-21 |
20210328069 | ARRAY SUBSTRATE AND DISPLAY PANEL - The present application discloses an array substrate and a display panel. The array substrate includes an underlying substrate and a first color resist layer. The first color resist layer is formed on the underlying substrate to block a channel region. The first color resist layer has at least two color resist layers, and the two color resist layers correspond to different colors and are disposed in a stack-up manner. | 2021-10-21 |
20210328070 | THIN FILM TRANSISTOR SUBSTRATE AND PREPARATION METHOD THEREOF - A thin film transistor substrate and a preparation method thereof are provided. The thin film transistor substrate includes a substrate layer, a light shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate layer, an interlayer dielectric layer, a source/drain layer, a passivation layer, and a pixel electrode layer, which are sequentially disposed, wherein the light shielding layer is formed by a nano core-shell structure, and the nano core-shell structure includes a nano core and a shell. | 2021-10-21 |
20210328071 | THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF, ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF - A thin film transistor and a fabrication method thereof, an array substrate and a fabrication method thereof are disclosed. The thin film transistor includes: a base substrate; a gate electrode, an active layer, a source electrode and a drain electrode on the base substrate; and the thin film transistor further includes: a light-shielding portion between the active layer and the base substrate, the light-shielding portion includes a groove, and the active layer is in the groove. | 2021-10-21 |
20210328072 | TFT ARRAY SUBSTRATE AND PREPARATION METHOD THEREOF - A preparation method of a thin film transistor (TFT) array substrate includes a step of providing a substrate to prepare a light shielding layer and a buffer layer in sequence on the substrate; and a step of preparing an active layer, a gate insulation layer, a gate, an interlayer insulation layer, and a source/drain metal layer in sequence on the buffer layer; wherein a light absorption layer is prepared on one side of the active layer. Absorbing light prevents most of the light from being reflected to the active layer by disposing a black photoresist below a source and a drain or over the light shielding layer, thereby improving performance of TFT devices. | 2021-10-21 |
20210328073 | THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATES, DISPLAY DEVICES - The present disclosure provides a thin-film transistor and a method for manufacturing the same, an array substrate, and a display device. The thin film transistor of the present disclosure include a plurality of insulating layers, among which at least one insulating layer on the low temperature polysilicon layer comprises organic material, so vias could be formed in the organic material by an exposing and developing process, thereby effectively avoiding the over-etching problem of the low temperature polycrystalline silicon layer caused by dry etching process. By adopting the method for manufacturing the film transistors of the present disclosure, the contact area and uniformity of the drain electrode and the low temperature polysilicon material layer can be increased; the conductivity can be improved; and the production cycle of products can be greatly reduced and thereby improving the equipment capacity. | 2021-10-21 |
20210328074 | SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE - A semiconductor device of one embodiment of the present invention includes a semiconductor, an insulator, a first conductor, and a second conductor. In the semiconductor device, a top surface of the semiconductor has a region in contact with the insulator; a side surface of the semiconductor has a region in contact with the insulator; the first conductor has a first region overlapping with the semiconductor with the insulator positioned therebetween; the first region has a region in contact with the top surface of the semiconductor and a region in contact with the side surface of the semiconductor; the second conductor has a second region in contact with the semiconductor; and the first region and the second region do not overlap with each other. | 2021-10-21 |
20210328075 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY APPARATUS, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR ARRAY SUBSTRATE - Provided is a thin film transistor including an active layer including a first silicon active layer, a second silicon active layer, and an oxide active layer in a space between the first silicon active layer and the second silicon active layer, a gate electrode on the active layer with a gate insulating layer disposed therebetween, and a source electrode and a drain electrode with an interlayer insulating layer disposed between the gate electrode and the source and drain electrodes, the source and drain electrodes being in contact with the first silicon active layer and the second silicon active layer, respectively. | 2021-10-21 |
20210328076 | Merged PiN Schottky (MPS) Diode With Plasma Spreading Layer And Manufacturing Method Thereof - A method for manufacturing a merged PiN Schottky (MPS) diode may include steps of providing a substrate having a first conductivity type; forming an epitaxial layer with the first conductivity type on top of the substrate; forming a plurality of regions with a second conductivity type under a top surface of the epitaxial layer; forming a plasma spreading layer; depositing and patterning a first Ohmic contact metal on the regions with the second conductivity type; depositing a Schottky contact metal on top of the entire epitaxial layer; and forming a second Ohmic contact metal on a backside of the substrate. In another embodiment, the step of forming a plurality of regions with a second conductivity type may include steps of depositing and patterning a mask layer on the epitaxial layer, implanting P-type dopant into the epitaxial layer, and removing the mask layer. | 2021-10-21 |
20210328077 | Merged PiN Schottky (MPS) Diode With Multiple Cell Designs And Manufacturing Method Thereof - A semiconductor device may include a substrate having a first conductivity type; an epitaxial layer having the first conductivity type deposited on one side of the substrate; a plurality of regions having a second conductivity type formed under a top surface of the epitaxial layer; a first Ohmic metal patterned and deposited on top of the regions with the second conductivity type; a Schottky contact metal deposited on top of the entire epitaxial layer to form a Schottky junction; and a second Ohmic metal deposited on a backside of the substrate, wherein the regions include one or more wide regions, each having different widths that can be optimized to simultaneously obtain high surge current capability and preserve a low forward voltage drop and reverse leakage current. | 2021-10-21 |
20210328078 | Merged PiN Schottky (MPS) Diode With Plasma Spreading Layer And Manufacturing Method Thereof - A method for manufacturing a merged PiN Schottky (MPS) diode may include steps of providing a substrate having a first conductivity type; forming an epitaxial layer with the first conductivity type on top of the substrate; forming a plurality of regions with a second conductivity type under a top surface of the epitaxial layer; forming a plasma spreading layer; depositing and patterning a first Ohmic contact metal on the regions with the second conductivity type; depositing a Schottky contact metal on top of the entire epitaxial layer; and forming a second Ohmic contact metal on a backside of the substrate. In another embodiment, the step of forming a plurality of regions with a second conductivity type may include steps of depositing and patterning a mask layer on the epitaxial layer, implanting P-type dopant into the epitaxial layer, and removing the mask layer. | 2021-10-21 |
20210328079 | REDUCED OVERLAP SHINGLED SINGLE-SKU CELL DESIGN FOR SHINGLED PANELS - A solar module architecture features a plurality of photovoltaic strips separated from a cell workpiece. The cell workpiece comprises alignment mark(s) located in cell quadrants close to the workpiece edge. According to specific embodiments, an alignment mark is positioned at a break in a bus bar. As a result of this location, in the assembled solar module containing the separated strip, the alignment mark is hidden from view by an overlapping module element. In particular embodiments, the overlapping module element is another separated PV strip in a shingled configuration. | 2021-10-21 |
20210328080 | PHOTOELECTRIC CHIP, MANUFACTURING METHOD AND INSTALLATION METHOD - Provided are a photoelectric chip, a manufacturing method and an installation method, which relate to the field of optical communication and transmission technologies. The chip is provided with a light-splitting groove ( | 2021-10-21 |
20210328081 | Solar Cell Including Aluminum-Based Solar Energy Conversion Material - When a solar wavelength conversion material (solar spectral wavelength converter) produced based on a low-cost aluminum material having an ultraviolet ray absorption spectrum and a visible light emitting spectrum is positioned between a solar cell and an encapsulant of the front surface of the solar cell on which solar light is incident, photocurrent conversion efficiency of the solar cell may be improved by inducing a down-conversion effect and an anti-reflective coating effect at the same time, thereby increasing light-generated current. | 2021-10-21 |
20210328082 | MULTIJUNCTION SOLAR CELLS AND MULTICOLOR PHOTODETECTORS HAVING AN INTEGRATED EDGE FILTER - Semiconductor devices comprising a semiconductor edge filter, a first light absorbing region overlying the semiconductor edge filter and a second light absorbing region underlying the semiconductor edge filter are disclosed. The semiconductor edge filter has a high reflectivity over a first wavelength range absorbed by the overlying light absorbing region and a high transmission over a second wavelength range absorbed by the underlying light absorbing region. | 2021-10-21 |
20210328083 | OPTOELECTRONIC DEVICES HAVING AN ELECTRODE WITH APERTURES - The present disclosure generally relates to structures and semiconductor devices for use in optoelectronic/photonic applications and integrated circuit (IC) chips. More particularly, the present disclosure relates to optoelectronic devices having an electrode that is capable of filtering electromagnetic waves. The present disclosure provides a structure having a substrate, an optical detector upon the substrate, and an electrode upon an upper surface of the optical detector. The electrode defines at least one aperture configured to filter electromagnetic waves traversing the aperture. The optical detector is structured to detect the electromagnetic waves filtered by the aperture. | 2021-10-21 |
20210328084 | SYSTEMS AND METHODS FOR CAVITATION OF SILVER - Provided in one embodiment is a method of making paste for solar cells. The method can include forcing silver through a feed tube coupled to a hydrodynamic cavitation chamber using an air-driven piston. The method can include subjecting the silver to hydrodynamic cavitation in the hydrodynamic cavitation chamber by using a hydraulic pump to pass the silver sequentially through a primary orifice, a secondary orifice, and a final orifice within the hydrodynamic cavitation chamber to produce the paste for the solar cells. The silver can include up to three unique silver powders having a total particle size distribution from 0.1 microns to 10 microns. A first silver powder can have a first average particle size of 1.5 um, a second silver powder having a second average particle size of 0.5 um, and a third silver powder having a third average particle size of 0.2 um. | 2021-10-21 |
20210328085 | High Information Content Imaging Using Mie Photo Sensors - A Mie photo sensor is described. A Mie photo sensor is configured to leverage Mie scattering to implement a photo sensor having a resonance. The resonance is based on various physical and material properties of the Mie photo sensor. In an example, a Mie photo sensor includes a layer of semiconductor material with one or more mesas. Each mesa of semiconductor material may include a scattering center. The scattering center is formed by the semiconductor material of the mesa being at least partially surround by a material with a different refractive index than the semiconductor material. The abutting refractive index materials create an interface that forms a scattering center and localizes the generation of free carriers during Mie resonance. One or more electrical contacts may be made to the mesa to measure the electrical properties of the mesa. | 2021-10-21 |
20210328086 | BETAVOLTAICS WITH ABSORBER LAYER CONTAINING COATED SCINTILLATING PARTICLES - A beta-voltaic device made up of silica covered scintillating particles incorporated within an isotope absorbing layer to produce an improved power source. Lost beta particles are converted to UV light which is also converted to power in a beta-voltaic converter. The addition of the scintillating particles effectively increases the power efficiency of a BV device while maintaining the slim profile and smaller size of the power source. This arrangement makes possible implementation in space, defense, intelligence, medical implants, marine biology and other applications. | 2021-10-21 |
20210328087 | THERMOPHOTOVOLTAIC CELLS WITH INTEGRATED AIR-BRIDGE FOR IMPROVED EFFICIENCY - To reach high efficiencies, thermophotovoltaic cells must utilize the broad spectrum of a radiative thermal source. One promising approach to overcome this challenge is to have low-energy photons reflected and reabsorbed by the thermal emitter, where their energy can have another chance at contributing toward photogeneration in the cell. However, current methods for photon recuperation are limited by insufficient bandwidth or parasitic absorption, resulting in large efficiency losses relative to theoretical limits. This work demonstrates nearly perfect reflection of low-energy photons (˜99%) by embedding an air layer within the TPV cell. This result represents a four-fold reduction in parasitic absorption relative to existing TPV cells. As out-of-band reflectance approaches unity, TPV efficiency becomes nearly insensitive to cell bandgap and emitter temperature. Accessing this regime unlocks a range of possible materials and heat sources that were previously inaccessible to TPV energy conversion. | 2021-10-21 |
20210328088 | OPTICAL SENSING DEVICE - An optical sensing device can include: a semiconductor having a photosensitive region; an optical structure located above the photosensitive region; and where the optical structure comprises alternately stacked light-filtering layers and light-transmitting layers, in order to block large-angle incident light from entering the photosensitive region. | 2021-10-21 |
20210328089 | Optoelectronic Sensor - In an embodiment an optoelectronic sensor includes a radiation-emitting semiconductor region, a radiation-detecting semiconductor region, a first polarization filter arranged above the radiation-emitting semiconductor region and including a first polarization direction and a second polarization filter arranged above the radiation-detecting semiconductor region and including a second polarization direction, wherein the first polarization direction and the second polarization direction are perpendicular to each other, wherein a radiation-reflecting or radiation-absorbing layer is arranged on side flanks of the radiation-emitting semiconductor region and/or the radiation-detecting semiconductor region and/or the first polarization filter and/or the second polarization filter. | 2021-10-21 |
20210328090 | BIFACIAL PHOTOVOLTAIC CELL - The invention provides a bifacial photovoltaic cell comprising: a semiconductor substrate, the substrate comprising an n+ layer on a first surface, and a p+ layer on a second surface. The n+ layer comprises an n-dopant and the p+ layer comprises a p-dopant. The cell further comprises a passivating and/or antireflective coating on the doped first and second surfaces. The cell is characterized in that the second surface of the semiconductor substrate has an area substantially devoid of the p-dopant on an edge of the second surface having a width in the range of 0.1-0.5 mm; wherein the area is formed by etching the semiconductor substrate. | 2021-10-21 |
20210328091 | APPARATUS FOR SEPARATING A SOLAR CELL INTO TWO OR MORE SOLAR CELL PIECES, SYSTEM FOR THE MANUFACTURE OF AT LEAST ONE SHINGLED SOLAR CELL ARRANGEMENT, AND METHOD FOR SEPARATING A SOLAR CELL INTO TWO OR MORE SOLAR CELL PIECES - The present disclosure provides an apparatus for separating a solar cell into two or more solar cell pieces. The apparatus includes a moveable arrangement, a separation device attached to the moveable arrangement, and a holding device attached to the moveable arrangement via one or more elastic elements. | 2021-10-21 |
20210328092 | AlGaN UNIPOLAR CARRIER SOLAR-BLIND ULTRAVIOLET DETECTOR AND MANUFACTURING METHOD THEREOF - Provided is an AlGaN unipolar carrier solar-blind ultraviolet detector that is based on the AlGaN polarization effect and that uses the double heterojunction of the p-AlzGa1-zN/i-AlyGa1-yN/n-AlxGa1-xN (0.45=2021-10-21 | |
20210328093 | METHODS FOR FABRICATING THIN FILM III-V COMPOUND SOLAR CELL - The present invention utilizes epitaxial lift-off in which a sacrificial layer is included in the epitaxial growth between the substrate and a thin film III-V compound solar cell. To provide support for the thin film III-V compound solar cell in absence of the substrate, a backing layer is applied to a surface of the thin film III-V compound solar cell before it is separated from the substrate. To separate the thin film III-V compound solar cell from the substrate, the sacrificial layer is removed as part of the epitaxial lift-off. Once the substrate is separated from the thin film III-V compound solar cell, the substrate may then be reused in the formation of another thin film III-V compound solar cell. | 2021-10-21 |
20210328094 | LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING - Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment. | 2021-10-21 |
20210328095 | METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT - A method includes forming a first n-type nitride semiconductor layer; forming a first light-emitting layer on the first n-type nitride semiconductor layer; forming a first nitride semiconductor layer on the first light-emitting layer by introducing a gas comprising gallium and having a first flow rate; forming a first p-type nitride semiconductor layer on the first nitride semiconductor layer; forming an n-type intermediate layer on the first p-type nitride semiconductor layer; forming a second n-type nitride semiconductor layer on the n-type intermediate layer; forming a second light-emitting layer on the second n-type nitride semiconductor layer; forming a second nitride semiconductor layer on the second light-emitting layer by introducing a gas comprising gallium and having a second flow rate; and forming a second p-type nitride semiconductor layer on the second nitride semiconductor layer. The first flow rate is less than the second flow rate. | 2021-10-21 |
20210328096 | LIGHT-EMITTING ELEMENT - A light-emitting element includes: a first conductive semiconductor layer; a plurality of rods disposed on the first conductive semiconductor layer, the rods comprising a first conductive semiconductor; a first insulating film disposed on a surface of the first conductive semiconductor layer while being absent under the rods; a plurality of light-emitting layers disposed on lateral surfaces of the rods; a plurality of second conductive semiconductor layers disposed on outer sides of the light-emitting layers; and a plurality of second insulating films disposed at upper ends of the rods. | 2021-10-21 |
20210328097 | LIGHT EMITTING DEVICE INCLUDING COVERING MEMBER AND EXTERNAL CONNECTION ELECTRODES - A light emitting device includes: a first light emitting element that comprises a pair of first electrodes; a second light emitting element that comprises a pair of second electrodes; a covering member that integrally covers the first and second light emitting elements such that lower surfaces of the pair of first electrodes and lower surfaces of the pair of second electrodes are exposed from a lower surface of the covering member; a pair of first external connection electrodes, each comprising: a first portion that covers the lower surface of a respective first electrode, and a second portion that covers a portion of the lower surface of the covering member; and a pair of second external connection electrodes, each comprising: a first portion that covers the lower surface of a respective second electrode, and a second portion that covers a portion of the lower surface of the covering member. | 2021-10-21 |
20210328098 | DISPLAY DEVICE, SUBSTRATE FOR DISPLAY DEVICE AND METHOD FOR REPAIRING DISPLAY DEVICE - A display including a base, a plurality of pixels disposed on the base in rows and columns, at least one of the pixels including a first interconnect and a plurality of second interconnects, and a plurality of mounting portions on which a plurality of sub-pixels is to be mounted, in which a first portion of each of the plurality of mounting portions is electrically connected to the first interconnect, a second portion of each of the plurality of mounting portions is electrically connected to one of the second interconnects, and at least one of the plurality of sub-pixels mounted on the plurality of mounting portions is configured to emit light of different wavelength. | 2021-10-21 |
20210328099 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A method of manufacturing a nitride semiconductor light-emitting element includes: growing an n-side superlattice layer that includes InGaN layers and GaN layers; and, after the step of growing the n-side superlattice layer, growing a light-emitting layer. The step of growing the n-side superlattice layer comprises repeating a cycle n times (n is a number of repetition), the cycle including growing one InGaN layer and growing one GaN layer. In the step of growing the n-side superlattice layer, the step of growing one GaN layer in each cycle from a first cycle to an mth cycle is performed using carrier gas that contains N | 2021-10-21 |
20210328100 | SINGLE CHIP MULTI BAND LED - A light emitting diode includes an n-type nitride semiconductor layer, an active layer located on the n-type nitride semiconductor layer, and a p-type nitride semiconductor layer located on the active layer. The active layer has a single structure of a multi-quantum well in which a plurality of barrier layers and a plurality of well layers are stacked, and the active layer emits white light. | 2021-10-21 |
20210328101 | NANO-PHOTONICS REFLECTOR FOR LED EMITTERS - A system, method and device for use as a reflector for a light emitting diode (LED) are disclosed. The system, method and device include a first layer designed to reflect transverse-electric (TE) radiation emitted by the LED, a second layer designed to block transverse-magnetic (TM) radiation emitted from the LED, and a plurality of ITO layers designed to operate as a transparent conducting oxide layer. The first layer may be a one-dimension (1D) distributed Bragg reflective (DBR) layer. The second layer may be a two-dimension (2D) photonic crystal (PhC), a three-dimension (3D) PhC, and/or a hyperbolic metamaterial (HMM). The 2D PhC may include horizontal cylinder bars, vertical cylinder bars, or both. The system, method and device may include a bottom metal reflector that may be Ag free and may act as a bonding layer. | 2021-10-21 |
20210328102 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device may include a first gate electrode on a substrate, a buffer layer on the first gate electrode, a first active pattern on the buffer layer, overlapping the first gate electrode, and including an oxide semiconductor, a source pattern and a drain pattern respectively on ends of the first active pattern, an insulation layer overlapping the source pattern and the drain pattern on the buffer layer, an oxygen supply pattern on the insulation layer, overlapping the first active pattern, and supplying oxygen to the first active pattern, a second active pattern on the insulation layer and spaced apart from the oxygen supply pattern, the second active pattern including a channel region, and a source region and a drain region, an insulation pattern on the channel region of the second active pattern, and a second gate electrode on the insulation pattern. | 2021-10-21 |
20210328103 | SEMICONDUCTOR COMPONENT WITH A STRESS COMPENSATION LAYER AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR COMPONENT - A semiconductor device may include a conductive layer over a semiconductor body and a first stress compensation layer adjacent to the conductive layer. The stress compensation layer may include a defined first stress. | 2021-10-21 |
20210328104 | OXYGEN CONTROLLED PVD ALN BUFFER FOR GAN-BASED OPTOELECTRONIC AND ELECTRONIC DEVICES - Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer. | 2021-10-21 |
20210328105 | LIGHT EMITTING ELEMENT - A light emitting element includes: an n-side semiconductor layer made of a nitride semiconductor; a p-side semiconductor layer made of a nitride semiconductor; and an active layer disposed between the n-side semiconductor and the p-side semiconductor layer and having a multi-quantum well structure in which a plurality of nitride semiconductor well layers and a plurality of nitride semiconductor barrier layers are alternately stacked, wherein the light emitting element includes, between at least one of the plurality of well layers and the barrier layer disposed adjacent thereto on the p-side semiconductor side: a first layer and a second layer disposed successively from the well layer side. | 2021-10-21 |
20210328106 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT WITH A CURRENT SPREADING STRUCTURE CONTAINING SILVER, AND OPTOELECTRONIC DEVICE - An optoelectronic semiconductor component comprises a first semiconductor layer of a first conductivity type having a first main surface and a second semiconductor layer of a second conductivity type arranged on a side facing away from the first main surface of the first semiconductor layer. The optoelectronic semiconductor component further comprises, on the side of the first main surface, a first current spreading structure electrically connected to the first semiconductor layer and a second current spreading structure electrically connected to the second semiconductor layer. The optoelectronic semiconductor component furthermore includes a dielectric mirror layer arranged on the side of the first main surface of the first semiconductor layer and on a side of the first or second current spreading structure facing away from the first semiconductor layer. At least one of the first and second current spreading structures contains silver. | 2021-10-21 |
20210328107 | LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting display device includes a substrate including a display area and a non-display area adjacent to the display area; a lower pad electrode on the substrate in the non-display area; a planarization layer overlapping the lower electrode; an upper pad electrode on the lower pad electrode and overlapping at least a portion of the lower planarization layer. The planarization layer includes an opening exposing an upper surface of the lower pad electrode, the lower pad electrode and the upper pad electrode are electrically connected to each other through the opening, the lower planarization layer includes an exposed portion exposing an upper surface of the lower planarization layer, and an overlapping portion overlapping at least a portion of the upper pad electrode, and a height of the upper surface of the exposed portion is lower than a height of an upper surface of the overlapping portion. | 2021-10-21 |
20210328108 | LIGHT-EMITTING DIODE CHIP STRUCTURES WITH REFLECTIVE ELEMENTS - A light-emitting diode (LED) chip structure with a cup-like reflective element is provided. The LED chip structure comprises a substrate, an isolation element and a mesa including an LED surrounded by the isolation element. The isolation element comprises an upper isolation part and a lower isolation part. The lower isolation part is positioned in the substrate and the upper isolation part protrudes from a surface of the substrate. A reflective layer is disposed on a sidewall of the upper isolation part, and a bottom of the reflective layer does not contact the mesa. The cup-like reflective element at least includes the isolation element with the reflective layer. | 2021-10-21 |
20210328109 | AIRTIGHT PACKAGE - The present invention provides a hermetic package, including a ceramic base and a glass cover hermetically integrated with each other via a sealing material layer, wherein the ceramic base includes 0.1 mass % to 10 mass % of a black pigment, and wherein a difference between: a light absorption rate of the ceramic base at a wavelength of 808 nm when converted to 0.5 mm; and a light absorption rate of the sealing material layer at a wavelength of 808 nm when converted to 0.005 mm is 30% or less. | 2021-10-21 |
20210328110 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel and a display device. The display panel has a display area and a packaging area located on an outer periphery of the display area, and the display panel includes: an array substrate provided with pixel units distributed in an array and corresponding to the display area; the cover plate disposed opposite to the array substrate, the cover plate including a first substrate, a signal wire layer and an insulating layer formed on the first substrate, wherein the insulating layer covers the signal wire layer, wherein the signal wire layer includes a plurality of touch electrodes and a signal wire electrically connected to the touch electrodes and the signal wire is at least partially located in the packaging area; a packaging adhesive layer disposed between the cover plate and the array substrate to bond the cover plate and the array substrate. | 2021-10-21 |
20210328111 | LED DISPLAY SCREEN MODULE - An LED display screen module includes a module substrate and a plurality of LED package structures. The LED package structures are disposed on the module substrate and arranged into an array. Each of the LED package structures includes a plurality of pixels and a packaging layer. The pixels are spaced apart from each other. The packaging layer includes a plurality of packaging portions and a plurality of connecting portions. The packaging portions respectively cover the pixels, and each of the connecting portions is connected between the adjacent two packaging portions. Each of the packaging portions has an upper light emitting surface and a lateral light emitting surface. | 2021-10-21 |
20210328112 | LIGHT-ALTERING MATERIAL ARRANGEMENTS FOR LIGHT-EMITTING DEVICES - Solid-state lighting devices and more particularly light-emitting devices including light-emitting diodes (LEDs) with light-altering material arrangements are disclosed. LED devices may include light-altering materials that are provided around peripheral sidewalls of LED chips without the need for a supporting submount or lead frame. The light-altering materials may be provided with reduced thicknesses along peripheral sidewalls of LED chips. An exemplary LED device as disclosed herein may be configured with a footprint that is close to a footprint of the LED chip within the LED device while also providing an amount of light-altering material around peripheral edges of the LED chip to reduce cross-talk. Accordingly, such LED devices may be well suited for use in applications where LED devices form closely-spaced LED arrays. Fabrication techniques are disclosed that include laminating a preformed sheet of light-altering material on one or more surfaces of the LED chip. | 2021-10-21 |
20210328113 | DISPLAY WITH QUANTUM DOT OR QUANTUM PLATELET CONVERTER - A display device including an array of pixels, each pixel including at least three sub-pixels having a LED device emitting light with a blue color point. The first sub-pixel is designed to emit red light having a first color point, the second sub-pixel is designed to emit green light having a second color point, where the LED device of the third sub-pixel is covered with a third wavelength converting layer designed to emit light having a fourth color point. The fourth color point being such that the combination of light emitted by the LED device not converted by the wavelength converting layer and the light converted by the wavelength converting layer results in light having a third color point, where the first, the second and the third color points define a second color space in which a set color space is included. | 2021-10-21 |
20210328114 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT AND METHOD OF MANUFACTURING AN OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component may include a semiconductor chip that emits radiation of a first wavelength range from a radiation exit area and a conversion layer that has a plurality of single conversion layers. Each conversion layer may have a phosphor that converts the radiation from a first wavelength range to a second wavelength range. Each conversion layer may also have a concentration of the phosphor in the individual conversion layers different from one another. | 2021-10-21 |
20210328115 | LIGHT-EMITTING DEVICE AND METHOD FOR PRODUCING LIGHT-EMITTING DEVICE - A light-emitting device according to an embodiment of the present technology includes a semiconductor light-emitting section and a base. The base supports the semiconductor light-emitting section, and includes a light extraction surface and a side surface including a concave portion and a convex portion that are alternately arranged in a specified direction. This makes it possible to control an emission direction (a scattering direction) of light emitted from the side surface. This results in being able to provide a light-emitting device that is capable of controlling light emitted from a side surface of the light-emitting device, and a method for producing the light-emitting device. | 2021-10-21 |
20210328116 | LIGHT-EMITTING DIODE CHIP STRUCTURES WITH REFLECTIVE ELEMENTS - A light-emitting diode (LED) chip structure with a cup-like reflective element is provided. The LED chip structure comprises a substrate, an isolation element and a mesa including an LED surrounded by the isolation element. The isolation element comprises an upper isolation part and a lower isolation part. The lower isolation part is positioned in the substrate and the upper isolation part protrudes from a surface of the substrate. A reflective layer is disposed on a sidewall of the upper isolation part, and a bottom of the reflective layer does not contact the mesa. The cup-like reflective element at least includes the isolation element with the reflective layer. | 2021-10-21 |
20210328117 | LIGHT-EMITTING DEVICE - A light-emitting device includes a lead frame, a light-emitting diode (LED) chip, and an encapsulant. The LED chip is disposed on the lead frame, and includes a substrate, a semiconductor light-emitting unit disposed on a surface of the substrate, and a first electrode and a second electrode, which are disposed on the surface of the substrate, and which are located outwardly of the semiconductor light-emitting unit. The first and second electrodes are electrically connected to a lower surface of the semiconductor light-emitting unit, and are respectively connected to a first wiring bonding region and a second wiring bonding region on the lead frame. The encapsulant encapsulates the LED chip on the lead frame. | 2021-10-21 |
20210328118 | DISPLAY PANEL AND DISPLAY DEVICE - The present invention provides a display panel and a display device. The display panel divides a driving circuit of a driving circuit layer into a first portion, a second portion, and a connecting portion. The first portion and the second portion are on opposite sides of a substrate. A projection region of the second portion on the substrate is located in a projection region of the first portion on the substrate. Therefore, the second portion is located in a display region, a connecting region of external wires which cannot display is eliminated, and a bezel of the display panel is eliminated. | 2021-10-21 |
20210328119 | MICRO LIGHT-EMITTING DEVICE DISPLAY APPARATUS - A micro light-emitting device display apparatus includes a circuit substrate, at least one micro light-emitting device, and at least one conductive bump. The circuit substrate includes at least one pad. The micro light-emitting device is disposed on the circuit substrate and includes at least one electrode. At least one of the pad and the electrode has at least one closed opening. The conductive bump is disposed between the circuit substrate and the micro light-emitting device. The conductive bump extends into the closed opening and defines at least one void with the closed opening. The electrode of the micro light-emitting device is electrically connected to the pad of the circuit substrate with the conductive bump. | 2021-10-21 |
20210328120 | LIGHT EMITTING DEVICE, PACKAGE DEVICE AND METHOD OF LIGHT EMITTING DEVICE MANUFACTURING - A light-emitting device includes a micro light-emitting diode chip (micro LED chip), a first electrical connecting layer, a second electrical connecting layer and a housing layer. The micro LED chip includes a light exit surface, a bottom surface opposite to the light exit surface and first and second electrodes located on the bottom surface. The first and second electrical connecting layers respectively connect to the first and second electrodes and extend along two opposite sidewalls to two sides of a perimeter of the light exit surface. The housing layer encloses the micro LED chip and the first and second electrical connecting layer. The light exit surface of the micro LED chip and top surfaces of the first and second electrical connecting layers are not enclosed by the housing layer. | 2021-10-21 |
20210328121 | LIGHT EMITTING DIODE STRUCTURE AND METHOD FOR MANUFACTURING THE SAME - A LED structure includes a substrate, a plurality of LED units, a bonding layer and a metal contact. The substrate includes a driving circuit, and a plurality of LED units is formed on the substrate. The bonding layer is formed between the substrate and the plurality of LED units, and the metal contact is formed in the bonding layer beneath each LED unit to electrically connect each LED unit with a contact pad of the driving circuit. A first sectional area of the metal contact is smaller than a second sectional area of each LED unit. | 2021-10-21 |
20210328122 | FLEXIBLE THERMOELECTRIC DEVICE - A flexible thermoelectric device that includes a plurality of pairs of semiconducting legs. The pair of semiconducting legs includes an n-type thermoelectric leg and a p-type thermoelectric leg. The pairs of thermoelectric legs are positioned between two substrates and are electrically connected in series in an alternating sequence between n-type and p-type legs. Both the n-type legs and the p-type legs are made from a binder containing semiconducting materials/particles that give the legs their n-type and p-type properties, respectively. The n-type and p-type legs are directly bonded with an electrode on one of the substrates by the binder. The flexible thermoelectric device nay be fabricated by contacting the electrode with the n-type and p-type legs and curing the binder. | 2021-10-21 |
20210328123 | THERMOELECTRIC ELEMENT - A thermoelectric element according to one embodiment of the present invention comprises: a first metal substrate; a first resin layer arranged on the first metal substrate; a plurality of first electrodes arranged on the first resin layer; a plurality of P-type thermoelectric legs and a plurality of N-type thermoelectric legs arranged on the plurality of first electrodes; a plurality of second electrodes arranged on the plurality of P-type thermoelectric legs and the plurality of N-type thermoelectric legs; a second resin layer arranged on the plurality of second electrodes; and a second metal substrate arranged on the second resin layer, wherein at least one of the plurality of first electrodes comprises: a first surface coming into contact with the first resin layer; a second surface which is opposite to the first surface and on which one pair of a P-type thermoelectric leg and an N-type thermoelectric leg are arranged; and a first protruding part arranged along the edge of the second surface, and the thickness of the first resin layer arranged between neighboring first electrodes is less than the thickness of the first resin layer arranged on the lower side of the first surface. | 2021-10-21 |
20210328124 | MANUFACTURING METHOD OF THERMOELECTRIC CONVERSION ELEMENT - The present invention is to provide a method of producing a thermoelectric conversion device having a thermoelectric element layer with excellent shape controllability and capable of being highly integrated. The present invention relates to a method of producing a thermoelectric conversion device including a thermoelectric element layer formed of a thermoelectric semiconductor composition containing a thermoelectric semiconductor material on a substrate, the method including a step of providing a pattern frame having openings on a substrate; a step of filling the thermoelectric semiconductor composition in the openings; a step of drying the thermoelectric semiconductor composition filled in the openings, to form a thermoelectric element layer; and a step of releasing the pattern frame from the substrate. | 2021-10-21 |
20210328125 | LOW LOSS CONDUCTIVE LINE USING BRIDGED CONDUCTOR - Techniques for designing and fabricating quantum circuitry, including a coplanar waveguide (CPW), for quantum applications are presented. With regard to a CPW, a central conductor and two return conductor lines can be formed on a dielectric substrate, with one return conductor line on each side of the central conductor and separated from it by a space. The central conductor can have bridge portions that can be raised a desired distance above the substrate and base conductor portions situated between the bridge portions and in contact with the surface of the substrate; and/or portions of the substrate underneath the bridge portions of the central conductor can be removed such that the bridge portions, whether raised or unraised, can be the desired distance above the surface of the remaining substrate, and the base conductor portions can be in contact with other portions of the surface of the substrate that were not removed. | 2021-10-21 |
20210328126 | OPTICAL DETECTION APPARATUS AND METHOD - According to an example aspect of the present invention, there is provided an apparatus comprising: an optic fibre input ( | 2021-10-21 |
20210328127 | QUANTUM COMPUTING DEVICE AND SYSTEM - Provided is a quantum computing device and system. The quantum computing device includes a first qubit chip, a readout cavity structure surrounding a first end part of the first qubit chip, and a storage cavity structure surrounding a second end part of the first qubit chip, wherein the first qubit chip includes a first readout antenna disposed within the readout cavity structure, a first storage antenna disposed in the storage cavity structure, and a first qubit element provided between the first readout antenna and the first storage antenna, and wherein the first qubit element is disposed between the readout cavity structure and the storage cavity structure. | 2021-10-21 |
20210328128 | PIEZO ACTUATOR AND PIEZO ACTUATOR ARRAY - A piezo actuator for carrying out an actuating movement is disclosed, with a piezo bending transducer made of a carrier layer which is at least partially covered on one or two sides with a piezo lamella, with a movable end and with a housing, with a reference stop connected to the housing for determining a reference position for the actuating movement, with a first bearing region which comprises regions of the piezo actuator and the housing and which allows for twists ϕ | 2021-10-21 |
20210328129 | Sensor Element - The invention relates to a sensor element that is capable of sensing dynamic loads and/or vibrations in a machine component, the sensor element comprising a multilayer coating ( | 2021-10-21 |
20210328130 | 3D Printed and In-Situ Poled Flexible Piezoelectric Pressure Sensor - A piezoelectric artificial artery can be 3D printed to provide the real-time precise sensing of blood pressure and vessel motion patterns enabling early detection of partial occlusions. An electric-field assisted 3D printing method allows for rapid printing and simultaneously poled complex ferroelectric structures with high fidelity and good piezoelectric performance. The print material consists of ferroelectric potassium sodium niobite (KNN) particles embedded within a ferroelectric polyvinylidene fluoride (PVDF) polymer matrix. | 2021-10-21 |
20210328131 | METHOD OF MANUFACTURING PIEZOELECTRIC CERAMICS, PIEZOELECTRIC CERAMICS, PIEZOELECTRIC ELEMENT, ULTRASONIC MOTOR, OPTICAL APPARATUS, DUST REMOVING DEVICE, IMAGE PICKUP APPARATUS, ULTRASONIC PROBE, ULTRASONIC DIAGNOSTIC APPARATUS, AND ELECTRONIC APPARATUS - Provided are a piezoelectric ceramics which does not contain lead, has small temperature dependence of a piezoelectric constant within an operating temperature range, and has high density, a high mechanical quality factor, a satisfactory piezoelectric constant, and a small surface roughness, and a method of manufacturing the piezoelectric ceramics. The method of manufacturing a piezoelectric ceramics is characterized by including: sintering a compact containing a raw material at 1,000° C. or more to obtain a sintered compact; abrading the sintered compact; and annealing the abraded sintered compact at a temperature of 800° C. or more and less than 1,000° C. | 2021-10-21 |
20210328132 | OPERATIONAL ELEMENT COMPRISING MAGNETIC SHAPE MEMORY ALLOY AND A METHOD FOR MANUFACTURING IT - This invention relates to an operational element and a method for manufacturing the operational element that comprises magnetic shape memory alloy. in the method at least a part of the magnetic shape memory alloy is arranged as an active region that is responsive to a magnetic field and at least one other part of the magnetic shape memory alloy is arranged as an inactive region that is unresponsive to a magnetic field. | 2021-10-21 |
20210328133 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A method for fabricating a semiconductor device includes the steps of: forming a first metal interconnection on a substrate; forming a stop layer on the first metal interconnection; removing the stop layer to form a first opening; forming an electromigration enhancing layer in the first opening; and forming a second metal interconnection on the electromigration enhancing layer. Preferably, top surfaces of the electromigration enhancing layer and the stop layer are coplanar. | 2021-10-21 |
20210328134 | ULTRA-FAST MAGNETIC RANDOM ACCESS MEMORY HAVING A COMPOSITE SOT-MTJ STRUCTURE - An ultra-fast magnetic random access memory (MRAM) comprises a three terminal composite SOT magnetic tunneling junction (CSOT-MTJ) element including a magnetic flux guide (MFG) having a very high magnetic permeability, a spin Hall channel (SHC) having a large positive spin Hall angle, an in-plane magnetic memory (MM) layer, a tunnel barrier (TB) layer, and a magnetic pinning stack (MPS) having a synthetic antiparallel coupling pinned by an antiferromagnetic material. The magnetic writing is significantly boosted by a combined effort of enhanced spin orbit torque (SOT) and Lorentz force generated by current-flowing wire (CFW) in the SHC layer and spin transfer torque (STT) by a current flowing through the MTJ stack, and further enhanced by a magnetic close loop formed at the cross section of MFG/SHC/MM tri-layer. Such MRAM-SE will have a very fast (down to picoseconds) switching speed and consume much less power suitable level 1 or 2 cache application for SMRAM, CPU, GPU and TPU. | 2021-10-21 |
20210328135 | ASYMMETRIC ENGINEERED STORAGE LAYER OF MAGNETIC TUNNEL JUNCTION ELEMENT FOR MAGNETIC MEMORY DEVICE - A storage layer of a magnetic tunnel junction (MTJ) element is disclosed. The storage layer having perpendicular magnetic anisotropy includes a first ferromagnetic layer, a first dust layer disposed directly on the first ferromagnetic layer, a second ferromagnetic layer disposed directly on the first dust layer, a second dust layer disposed directly on the second ferromagnetic layer, and a third ferromagnetic layer disposed directly on the second dust layer. A material of the first dust layer is different from a material of the second dust layer. | 2021-10-21 |
20210328136 | MAGNETORESISTANCE EFFECT ELEMENT - A magnetoresistance effect element has a first ferromagnetic metal layer, a second ferromagnetic metal layer, and a tunnel barrier layer that is sandwiched between the first and second ferromagnetic metal layers, and the tunnel barrier layer has a spinel structure represented by a composition formula of AIn | 2021-10-21 |
20210328137 | INTERCONNECT STRUCTURES WITH SELECTIVE CAPPING LAYER - A method includes forming a first metallization layer containing a first metal-containing line and a second metal-containing line disposed in a first interlevel dielectric layer. The first metal-containing line includes a first conductive metal and the second metal-containing line includes a second conductive metal. The first metal-containing line and the second metal-containing line are recessed to below a top surface of the interlevel dielectric layer. A metal-containing cap protection layer is deposited in a recessed portion of the first metal-containing line and the second metal-containing line. The metal-containing cap protection layer includes a third conductive metal which is different than the first conductive metal and the second conductive metal. | 2021-10-21 |
20210328138 | METHODS FOR MANUFACTURING MAGNETORESISTIVE STACK DEVICES - Fabrication of a magnetic memory element, including a via ( | 2021-10-21 |
20210328139 | SEMICONDUCTOR DEVICE, MEMORY CELL AND METHOD OF FORMING THE SAME - A memory cell includes a storage element layer, a bottom electrode, a top electrode and a liner layer. The storage element layer has a first surface and a concaved second surface opposite to the first surface. The bottom electrode is disposed on the first surface and connected to the storage element layer. The top electrode is on the concaved second surface and connected to the storage element layer. The liner layer is surrounding the storage element layer and the top electrode. | 2021-10-21 |
20210328140 | DUAL LAYER DIELECTRIC LINER FOR RESISTIVE MEMORY DEVICES - A resistive memory device is provided. The resistive memory device comprises a first electrode and a resistive layer over the first electrode, the resistive layer having a sidewall. A second electrode is over the resistive layer. An insulating liner is formed on the sidewall of the resistive layer. The insulating liner comprises two layers of different dielectric materials. | 2021-10-21 |
20210328141 | MEMORY CELL, METHOD OF FORMING THE SAME, AND SEMICONDUCTOR DEVICE HAVING THE SAME - Provided are a memory cell and a method of forming the same. The memory cell includes a bottom electrode, a top electrode, a storage element layer, and a protective layer. The storage element layer is disposed between the bottom and top electrodes. The protective layer covers the storage element layer and the top electrode, and a material of the protective layer is derived from the storage element layer. A semiconductor device having the memory cell is also provided. | 2021-10-21 |
20210328142 | SELF-ALIGNED MEMORY DECKS IN CROSS-POINT MEMORY ARRAYS - A multi-layer memory device with an array having multiple memory decks of self-selecting memory cells is provided in which N memory decks may be fabricated with N+1 mask operations. The multiple memory decks may be self-aligned and certain manufacturing operations may be performed for multiple memory decks at the same time. For example, patterning a bit line direction of a first memory deck and a word line direction in a second memory deck above the first memory deck may be performed in a single masking operation, and both decks may be etched in a same subsequent etching operation. Such techniques may provide efficient fabrication which may allow for enhanced throughput, additional capacity, and higher yield for fabrication facilities relative to processing techniques in which each memory deck is processed using two or more mask and etch operations per memory deck. | 2021-10-21 |
20210328143 | GUNN DIODE AND METHOD FOR GENERATING A TERAHERTZ RADIATION - The invention relates to a Gunn diode comprising a first contact layer ( | 2021-10-21 |
20210328144 | COMPOSITION FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC OPTOELECTRONIC DEVICE AND DISPLAY DEVICE - A composition for an organic optoelectronic device, an organic optoelectronic device, and a display device, the composition including a first compound represented by Chemical Formula 1 and a second compound represented by a combination of Chemical Formula 2 and Chemical Formula 3: | 2021-10-21 |
20210328145 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - A light-emitting element having a long lifetime is provided. A light-emitting element exhibiting high emission efficiency in a high luminance region is provided. A light-emitting element includes a light-emitting layer between a pair of electrodes. The light-emitting layer contains a first organic compound, a second organic compound, and a phosphorescent compound. The first organic compound is represented by a general formula (G0). The molecular weight of the first organic compound is greater than or equal to 500 and less than or equal to 2000. The second organic compound is a compound having an electron-transport property. In the general formula (G0), Ar | 2021-10-21 |
20210328146 | APPARATUS AND VACUUM SYSTEM FOR CARRIER ALIGNMENT IN A VACUUM CHAMBER, AND METHOD OF ALIGNING A CARRIER - An apparatus for carrier alignment in a vacuum chamber is described. The apparatus includes a support extending in a first direction in the vacuum chamber, a magnetic levitation system configured to transport a first carrier in the first direction in the vacuum chamber, the magnetic levitation system comprising at least one magnet unit, and an alignment system for aligning the first carrier. The at least one magnet unit and the alignment system are rigidly fixed to the support. Further, a vacuum system and a method of aligning a carrier are described. | 2021-10-21 |
20210328147 | CARRIER FOR SUPPORTING A SUBSTRATE OR A MASK - A carrier for supporting a substrate or a mask in a vacuum chamber in or parallel to a first plane is provided. The carrier comprises a clamping device for fixing the carrier to an aligning device and a mechanical motion element connecting the clamping device to the carrier, the mechanical motion element allowing for relative movement of the clamping device and the carrier for at least one degree of freedom and providing a fixed connection between the clamping device and the carrier for at least another degree of freedom. | 2021-10-21 |
20210328148 | SEMICONDUCTOR MIXED MATERIAL AND MANUFACTURING METHOD THEREOF, THIN FILM TRANSISTOR AND ELECTRONIC DEVICE - A semiconductor mixed material and manufacturing method thereof, a thin film transistor and an electronic device are provided. The semiconductor mixed material includes an inorganic semiconductor nanoparticle and an organic semiconductor material, and the inorganic semiconductor nanoparticle is dispersed in the organic semiconductor material. The embodiments of the present disclosure ensure both a high electron mobility and a high charge transfer rate by mixing the inorganic semiconductor nanoparticle with the organic semiconductor material. | 2021-10-21 |
20210328149 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, COMPOSITION FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC OPTOELECTRONIC DEVICE, AND DISPLAY DEVICE - A compound for an organic optoelectronic device, a composition for an organic optoelectronic device including the same, an organic optoelectronic device, and a display device, the compound being represented by a combination of Chemical Formula 1 and Chemical Formula 2: | 2021-10-21 |
20210328150 | ORGANIC ELECTROLUMINESCENT COMPOUND, ORGANIC ELECTROLUMINESCENT MATERIAL COMPRISING THE SAME, AND ORGANIC ELECTROLUMINESCENT DEVICE - The present disclosure relates to an organic electroluminescent compound, an organic electroluminescent material comprising the same, and an organic electroluminescent device. By comprising an organic electroluminescent compound according to the present disclosure and an organic electroluminescent material comprising the same, an organic electroluminescent device having low driving voltage and/or high luminous efficiency and/or long lifespan can be provided. | 2021-10-21 |
20210328151 | ELECTRON TRANSPORT MATERIAL AND APPLICATION THEREOF - The present disclosure relates to an electron transport material and an application thereof. According to the electron transport material, a structure of a molecular is designed and selected to be constructed by a group having a high carrier mobility, such that the molecule has a higher carrier mobility. In addition, a core group of the molecule is a structure based on mesitylene triazine. The molecular rigidity of the structure is strong, and the intermolecular stacking can be effectively inhibited, such that the material has a lower refractive index, and the surface plasma polariton loss of an organic light-emitting device can be effectively suppressed. The forward light-emitting efficiency of the light-emitting device can be improved by more than 14% by applying the electron transport material to the device. | 2021-10-21 |
20210328152 | ORGANIC ELECTROLUMINESCENT DEVICE - The present disclosure relates to an organic electroluminescent device comprising a light-emitting layer and a hole transport zone. By the combination of the light-emitting layer comprising the compound according to the present disclosure and the hole transport zone comprising the compound having a specific HOMO energy level, the organic electroluminescent device having excellent luminous efficiency can be provided. | 2021-10-21 |
20210328153 | ELECTROLUMINESCENT MATERIALS AND DEVICES - Provided are an electroluminescent material and device. The electroluminescent material is a compound having an indole- and pyrrole-fused azamacrocycle structure segment which is connected to quinazoline having a substitution on a specific ring, quinoxaline having a substitution on a specific ring, or a similar structure thereof, and can be used as the host material in the electroluminescent device. These novel compounds can obtain a lower driving voltage, effectively improve device efficiency, greatly prolong device lifetime, and provide better device performance. Further provided are an electroluminescent device and a compound formulation. | 2021-10-21 |
20210328154 | PLURALITY OF HOST MATERIALS AND ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING THE SAME - The present disclosure relates to a plurality of host materials comprising a first host material comprising a compound represented by formula 1, and a second host material comprising a compound represented by formula 2, and an organic electroluminescent device comprising the same. By comprising a specific combination of compounds of the present disclosure as host materials, it is possible to provide an organic electroluminescent device having higher luminous efficiency and/or longer lifetime properties as compared with a conventional organic electroluminescent device. | 2021-10-21 |
20210328155 | ELECTRON BUFFERING MATERIAL AND ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING THE SAME - The present invention relates to an electron buffering material and an organic electroluminescent device comprising the same in an electron buffer layer. It is possible to provide an organic electroluminescent device having excellent luminous efficiency and lifespan characteristics by using the electron buffering material according to the present invention. | 2021-10-21 |
20210328156 | MIXTURE, ORGANIC ELECTROLUMINESCENCE DEVICE AND ELECTRONIC EQUIPMENT - A mixture contains a first compound and a second compound, in which the first compound has at least one of a first cyclic structure represented by a formula (11) below and a second cyclic structure represented by a formula (12) below, and the second compound is a compound represented by a formula (21) or a compound represented by a formula (22) below, and a total mass M | 2021-10-21 |
20210328157 | ORGANIC LIGHT-EMITTING DEVICE - Provided is an organic light-emitting device including an emission layer that includes a sensitizer, a fluorescent emitter, and a host. | 2021-10-21 |
20210328158 | FLEXIBLE SUBSTRATE AND MANUFACTURING METHOD THEREOF, PANEL AND ELECTRONIC DEVICE - A flexible substrate and a manufacturing method thereof, a panel and an electronic device are provided. The flexible substrate includes a first inorganic layer and a first organic layer; the first organic layer is on the first inorganic layer and in contact with the first inorganic layer, and a surface, which is in contact with the first organic layer, of the first inorganic layer has a first groove. | 2021-10-21 |
20210328159 | FLEXIBLE DISPLAY SUBSTRATE AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - A flexible display substrate includes a flexible substrate and a trace. The flexible substrate includes a bend region, and the trace disposed in the bend region. The bend region includes at least one via hole, and the trace includes a first metal trace and a second metal trace, and the first metal trace and the second metal trace are electrically connected to each other through the at least one via hole at an edge of the bend region. In addition, an organic light emitting diode (OLED) display device including the flexible display substrate is provided. | 2021-10-21 |
20210328160 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - The present disclosure provides an organic light emitting diode (OLED) display device, including a support member, a central frame disposed on the display support member. A left frame slidably connected to the central frame. A right frame slidably connected to the central frame. The OLED display is rolled up or stretched by sliding the left frame and the right frame. Therefore, space of large display is reduced, and convenience of carrying is enhanced. | 2021-10-21 |