42nd week of 2010 patent applcation highlights part 42 |
Patent application number | Title | Published |
20100267204 | PACKAGE STRUCTURE FOR INTEGRATED CIRCUIT DEVICE AND METHOD OF THE SAME - A package structure for packaging at least one of a plurality of intergraded circuit devices of a wafer is provided. The package structure includes an extension metal pad, a first conductive bump and an insulator layer. The extension metal pad electrically contacts the at least one of the plurality of intergraded circuit devices. The first conductive bump is located on the extension metal pad. The insulator layer is located over the at least one of the plurality of intergraded circuit devices and on a sidewall of it. | 2010-10-21 |
20100267205 | CARBON NANOTUBES FOR THE SELECTIVE TRANSFER OF HEAT FROM ELECTRONICS - Under one aspect, a method of cooling a circuit element includes providing a thermal reservoir having a temperature lower than an operating temperature of the circuit element; and providing a nanotube article in thermal contact with the circuit element and with the reservoir, the nanotube article including a non-woven fabric of nanotubes in contact with other nanotubes to define a plurality of thermal pathways along the article, the nanotube article having a nanotube density and a shape selected such that the nanotube article is capable of transferring heat from the circuit element to the thermal reservoir. | 2010-10-21 |
20100267206 | SEMICONDUCTOR DIE PACKAGE INCLUDING HEAT SINKS - A semiconductor die package including at least two heat sinks. The semiconductor die package includes a first heat sink, a second heat sink coupled to the first heat sink, and a semiconductor die between the first heat sink and the second heat sink. The semiconductor die is electrically coupled to the first heat sink and the second heat sink. The semiconductor die may also be attached to a lead. | 2010-10-21 |
20100267207 | INTEGRATED CIRCUIT MODULE AND METHOD OF PACKAGING SAME - An integrated circuit (IC) module ( | 2010-10-21 |
20100267208 | COMPONENT FOR SEMICONDUCTOR PACKAGE AND MANUFACTURING METHOD OF COMPONENT FOR SEMICONDUCTOR PACKAGE - A component for semiconductor package which has a protective insulating layer on at least one surface of a component body and exposes a conductive material of the component body to an opening part of the protective insulating layer is manufactured by a method including the steps of (a) forming a mask on at least one surface of the component body, (b) forming the protective insulating layer by filling an opening part of the mask with a protective insulating material by a molding method using a metal mold comprising a mold release film, and (c) removing the metal mold and removing the mask. A typical component is a lead frame or a substrate for semiconductor package. | 2010-10-21 |
20100267209 | POWER SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR - A manufacturing method is provided for a power semiconductor device that enables reducing its on-state voltage and power loss. The semiconductor device includes a set of L-shaped trench gates | 2010-10-21 |
20100267210 | Semiconductor device and method of fabricating the same - A semiconductor device may include a substrate having a cell active region. A cell gate electrode may be formed in the cell active region. A cell gate capping layer may be formed on the cell gate electrode. At least two cell epitaxial layers may be formed on the cell active region. One of the at least two cell epitaxial layers may extend to one end of the cell gate capping layer and another one of the at least two cell epitaxial layers may extend to an opposite end of the cell gate capping layer. Cell impurity regions may be disposed in the cell active region. The cell impurity regions may correspond to a respective one of the at least two cell epitaxial layers. | 2010-10-21 |
20100267211 | Method of manufacturing semiconductor apparatus - A method of manufacturing a semiconductor apparatus includes forming a trench in a semiconductor layer, forming a gate electrode inside the trench, forming a thermally-oxidized film on the gate electrode inside the trench, forming a silicate glass film on the thermally-oxidized film inside the trench, forming a body region inside the semiconductor layer, and forming a source region on the body region. The method provides a semiconductor apparatus having reduced fluctuation of a channel length and low ON-resistance. | 2010-10-21 |
20100267212 | FABRICATION METHODS FOR RADIATION HARDENED ISOLATION STRUCTURES - Semiconductor devices can be fabricated using conventional designs and process but including specialized structures to reduce or eliminate detrimental effects caused by various forms of radiation. Such semiconductor devices can include one or more parasitic isolation devices and/or buried layer structures disclosed in the present application. The introduction of design and/or process steps to accommodate these novel structures is compatible with conventional CMOS fabrication processes, and can therefore be accomplished at relatively low cost and with relative simplicity. | 2010-10-21 |
20100267213 | SELF-ALIGNED COMPLEMENTARY LDMOS - The invention includes a laterally double-diffused metal-oxide semiconductor (LDMOS) having a reduced size, a high breakdown voltage, and a low on-state resistance. This is achieved by providing a thick gate oxide on the drain side of the device, which reduces electric field crowding in the off-state to reduce the breakdown voltage and forms an accumulation layer in the drift region to reduce the device resistance in the on-state. A version of the device includes a low voltage version with a thin gate oxide on the source side of the device and a high voltage version of the device includes a thick gate oxide on the source side. The LDMOS may be configured in an LNDMOS having an N type source or an LPDMOS having a P type source. The source of the device is fully aligned under the oxide spacer adjacent the gate to provide a large SOA and to reduce the device leakage. | 2010-10-21 |
20100267214 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to the method for manufacturing a semiconductor device, a surface of a lower, insulating film ( | 2010-10-21 |
20100267215 | Semiconductor device including an improved capacitor and method for manufacturing the same - In a semiconductor device according to embodiments of the invention, a capacitor includes a storage electrode having a cylindrical storage conductive layer pattern and connecting members formed on the upper portion of the cylindrical storage conductive layer pattern. The connecting member connects to an adjacent connecting member of another storage electrode. A dielectric layer and a plate electrode are successively formed on the storage electrode. All of the capacitors are connected by one another by forming cylindrical storage electrodes so that the storage electrode does not fall down when the capacitors have an extremely large aspect ratio. Thus, the capacitance of the capacitors may be improved to the desired level. A semiconductor device that includes these capacitors may have improved reliability and the throughput of a semiconductor manufacturing process may be increased. | 2010-10-21 |
20100267216 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - To provide a method of manufacturing a semiconductor device in which the space between semiconductor films transferred at plural locations is narrowed. A first bonding substrate having first projections is attached to a base substrate. Then, the first bonding substrate is separated at the first projections so that first semiconductor films are formed over the base substrate. Next, a second bonding substrate having second projections is attached to the base substrate so that the second projections are placed in regions different from regions where the first semiconductor films are formed. Subsequently, the second bonding substrate is separated at the second projections so that second semiconductor films are formed over the base substrate. In the second bonding substrate, the width of each second projection in a direction (a depth direction) perpendicular to the second bonding substrate is larger than the film thickness of each first semiconductor film formed first. | 2010-10-21 |
20100267217 | Backside Process for a Substrate - A method of forming a semiconductor device is presented. A conductor is embedded within a substrate, wherein the substrate contains a non-conducting material. The backside of the substrate is ground to a thickness wherein at least | 2010-10-21 |
20100267218 | Semiconductor Wafer Processing to Increase the Usable Planar Surface Area - The invention provides a method for increasing the usable surface area of a semiconductor wafer having a substantially planar surface and a thickness dimension at right angles to said substantially planar surface, the method including the steps of selecting a strip thickness for division of the wafer into a plurality of strips, selecting a technique for cutting the wafer into the strips at an angle to the substantially planar surface, in which the combined strip thickness and width of wafer removed by the cutting is less than the thickness of the wafer, cutting the wafer into strips using the selected technique and separating the strips from each other. | 2010-10-21 |
20100267219 | OPTICAL DEVICE WAFER PROCESSING METHOD - An optical device wafer processing method including a protective plate attaching step of attaching a transparent protective plate through a double-sided adhesive tape to the front side of a sapphire substrate constituting an optical device wafer, the double-sided adhesive tape being composed of a sheet capable of blocking ultraviolet radiation and adhesive layers formed on both sides of the sheet, wherein the adhesive force of each adhesive layer can be reduced by applying ultraviolet radiation; a sapphire substrate grinding step of grinding the back side of the sapphire substrate; a modified layer forming step of applying a laser beam to the sapphire substrate from the back side thereof to thereby form a modified layer in the sapphire substrate along each street; a protective plate removing step of removing the protective plate in the condition where the double-sided adhesive tape is left on the sapphire substrate; and a wafer dividing step of breaking the sapphire substrate along each street where the modified layer is formed, thus dividing the optical device wafer into individual optical devices in the condition where the double-sided adhesive tape is left on the sapphire substrate. | 2010-10-21 |
20100267220 | Methods Of Depositing Antimony-Comprising Phase Change Material Onto A Substrate And Methods Of Forming Phase Change Memory Circuitry - A method of depositing an antimony-comprising phase change material onto a substrate includes providing a reducing agent and vaporized Sb(OR) | 2010-10-21 |
20100267221 | GROUP III NITRIDE SEMICONDUCTOR DEVICE AND LIGHT-EMITTING DEVICE USING THE SAME - A Group III nitride semiconductor device and method for producing the same. The device includes a substrate, and a plurality of Group III nitride semiconductor layers provided on the substrate. A first layer which is in contact with the substrate is composed of Al | 2010-10-21 |
20100267222 | High-Throughput Printing of Semiconductor Precursor Layer from Nanoflake Particles - Methods and devices are provided for transforming non-planar or planar precursor materials in an appropriate vehicle under the appropriate conditions to create dispersions of planar particles with stoichiometric ratios of elements equal to that of the feedstock or precursor materials, even after selective forces settling. In particular, planar particles disperse more easily, form much denser coatings (or form coatings with more interparticle contact area), and anneal into fused, dense films at a lower temperature and/or time than their counterparts made from spherical nanoparticles. These planar particles may be nanoflakes that have a high aspect ratio. The resulting dense films formed from nanoflakes are particularly useful in forming photovoltaic devices. | 2010-10-21 |
20100267223 | Method of Fabricating Thin Film Interface for Internal Light Reflection and Impurities Isolation - A high-quality epitaxial silicon thin layer is formed on an upgraded metallurgical grade silicon (UMG-Si) substrate. A thin film interface is fabricated between the UMG-Si substrate and the epitaxial silicon thin layer. The interface is capable of internal light reflection and impurities isolation. With the interface, photoelectrical conversion efficiency is improved. Thus, the present invention is fit to be applied for making solar cell having epitaxial silicon thin layer. | 2010-10-21 |
20100267224 | ENHANCED SCAVENGING OF RESIDUAL FLUORINE RADICALS USING SILICON COATING ON PROCESS CHAMBER WALLS - Methods and apparatus for processing a substrate are provided herein. In some embodiments, an apparatus for substrate processing includes a process chamber having a chamber body defining an inner volume; and a silicon containing coating disposed on an interior surface of the chamber body, wherein an outer surface of the silicon containing coating is at least 35 percent silicon (Si) by atom. In some embodiments, a method for forming a silicon containing coating in a process chamber includes providing a first process gas comprising a silicon containing gas to an inner volume of the process chamber; and forming a silicon containing coating on an interior surface of the process chamber, wherein an outer surface of the silicon containing coating is at least 35 percent silicon. | 2010-10-21 |
20100267225 | Method of manufacturing semiconductor device - A method of manufacturing a semiconductor device, the method including forming a photoresist film on a substrate, and removing the photoresist film from the substrate using a composition that includes a sulfuric acid solution, a hydrogen peroxide solution, and a corrosion inhibitor. | 2010-10-21 |
20100267226 | Method of forming a structure over a semiconductor substrate - The invention includes a method of forming a structure over a semiconductor substrate. A silicon dioxide containing layer is formed across at least some of the substrate. Nitrogen is formed within the silicon dioxide containing layer. Substantially all of the nitrogen within the silicon dioxide is at least 10 Å above the substrate. After the nitrogen is formed within the silicon dioxide layer, conductively doped silicon is formed on the silicon dioxide layer. | 2010-10-21 |
20100267227 | Mask frame assembly for thin film deposition and associated methods - A mask frame assembly for thin film deposition including a frame having an opening portion and a support portion, and a mask having a deposition area in a position corresponding to the opening portion, wherein the mask includes a first layer including the deposition area and a peripheral portion disposed outside the deposition area and a second layer including a first surface and a second surface opposite to the first surface, at least a part of the first surface of the second layer faces the first layer and contacts the peripheral portion, and the second surface is welded to the support portion of the frame. | 2010-10-21 |
20100267228 | Copper interconnection structure, semiconductor device, and method for forming copper interconnection structure - A copper interconnection structure includes an insulating layer, an interconnection and a barrier layer. The insulating layer includes silicon (element symbol: Si), carbon (element symbol: C), hydrogen (element symbol: H) and oxygen (element symbol: O). The interconnection is located on the insulating layer, and the interconnection includes copper (element symbol: Cu). The barrier layer is located between the insulating layer and the interconnection. The barrier layer includes an additional element, carbon (element symbol: C) and hydrogen (element symbol: H). The barrier layer has atomic concentrations of carbon (element symbol: C) and hydrogen (element symbol: H) maximized in a region of a thickness of the barrier layer where the atomic concentration of the additional element is maximized. | 2010-10-21 |
20100267229 | METHODS AND SYSTEMS FOR LOW INTERFACIAL OXIDE CONTACT BETWEEN BARRIER AND COPPER METALLIZATION - The present invention relates to methods and systems for the metallization of semiconductor devices. One aspect of the present invention is a method of depositing a copper layer onto a barrier layer so as to produce a substantially oxygen free interface therebetween. In one embodiment, the method includes providing a substantially oxide free surface of the barrier layer. The method also includes depositing an amount of atomic layer deposition (ALD) copper on the oxide free surface of the barrier layer effective to prevent oxidation of the barrier layer. The method further includes depositing a gapfill copper layer over the ALD copper. Another aspect of the present invention is a system for depositing a copper layer onto barrier layer so as to produce a substantially oxygen-free interface therebetween. In one embodiment, the integrated system includes at least one barrier deposition module. The system also includes an ALD copper deposition module configured to deposit copper by atomic layer deposition. The system further includes a copper gapfill module and at least one transfer module coupled to the at least one barrier deposition module and to the ALD copper deposition module. The transfer module is configured so that the substrate can be transferred between the modules substantially without exposure to an oxide-forming environment. | 2010-10-21 |
20100267230 | METHOD FOR FORMING TUNGSTEN CONTACTS AND INTERCONNECTS WITH SMALL CRITICAL DIMENSIONS - Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process. | 2010-10-21 |
20100267231 | APPARATUS FOR UV DAMAGE REPAIR OF LOW K FILMS PRIOR TO COPPER BARRIER DEPOSITION - An apparatus and method for the ultraviolet (UV) treatment of carbon-containing low-k dielectric enables process-induced damage repair. A semiconductor substrate processing system may be configured to include degas and plasma pre-clean modules, UV process modules, copper diffusion barrier deposition modules and copper seed deposition modules such that the substrate is held under vacuum and is not exposed to ambient air after low k damage repair and before copper barrier layer deposition. Inventive methods provide for treatment of a damaged low-k dielectric on a semiconductor substrate with UV radiation to repair processing induced damage and barrier layer deposition prior breaking vacuum. | 2010-10-21 |
20100267232 | Transitional Interface Between Metal and Dielectric in Interconnect Structures - An integrated circuit structure and methods for forming the same are provided. The integrated circuit structure includes a semiconductor substrate; a dielectric layer over the semiconductor substrate; an opening in the dielectric layer; a conductive line in the opening; a metal alloy layer overlying the conductive line; a first metal silicide layer overlying the metal alloy layer; and a second metal silicide layer different from the first metal silicide layer on the first metal silicide layer. The metal alloy layer and the first and the second metal silicide layers are substantially vertically aligned to the conductive line. | 2010-10-21 |
20100267233 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A metal member layer on a silicon member layer is patterned. A sidewall film is formed on a surface of the metal member layer. The silicon member layer is patterned to form a structure including the silicon member layer and the metal member layer, the surface of which is covered with the sidewall film. After the surface of the structure is cleaned, a water-repellent protective film is formed on the surface of the structure before the surface of the structure is dried. | 2010-10-21 |
20100267234 | FOCUSED ION BEAM DEEP NANO-PATTERNING APPARATUS AND METHOD - The present invention introduces a new technique allowing the fabrication of high-aspect ratio nanoscale semiconductor structures and local device modifications using FIB technology. The unwanted semiconductor sputtering in the beam tail region prevented by a thin slow-sputter-rate layer which responds much slower and mostly to the high-intensity ion beam center, thus acting as a saturated absorber funnel-like mask for the semiconductor. The protective layer can be deposited locally using FIB, thus enabling this technique for local device modifications, which is impossible using existing technology. Furthermore, such protective layers allow much higher resolution and nanoscale milling can be achieved with very high aspect ratios, e.g. Ti layer results in aspect ratio higher than 10 versus bare semiconductor milling ratio of about 3. | 2010-10-21 |
20100267235 | METHODS FOR DEPOSITING ULTRA THIN LOW RESISTIVITY TUNGSTEN FILM FOR SMALL CRITICAL DIMENSION CONTACTS AND INTERCONNECTS - Provided are methods of void-free tungsten fill of high aspect ratio features. According to various embodiments, the methods involve a reduced temperature chemical vapor deposition (CVD) process to fill the features with tungsten. In certain embodiments, the process temperature is maintained at less than about 350° C. during the chemical vapor deposition to fill the feature. The reduced-temperature CVD tungsten fill provides improved tungsten fill in high aspect ratio features, provides improved barriers to fluorine migration into underlying layers, while achieving similar thin film resistivity as standard CVD fill. Also provided are methods of depositing thin tungsten films having low-resistivity. According to various embodiments, the methods involve performing a reduced temperature low resistivity treatment on a deposited nucleation layer prior to depositing a tungsten bulk layer and/or depositing a bulk layer via a reduced temperature CVD process followed by a high temperature CVD process. | 2010-10-21 |
20100267236 | METHOD FOR REDUCING SILICIDE DEFECTS IN INTEGRATED CIRCUITS - A method for forming silicide contacts in integrated circuits (ICs) is described. A spacer pull-back etch is performed during the salicidation process to reduce the stress between the spacer and source/drain silicide contact at the spacer undercut. This prevents the propagation of surface defects into the substrate, thereby minimizing the occurrence of silicide pipe defects. The spacer pull-back etch can be performed after a first annealing step to form the silicide contacts. | 2010-10-21 |
20100267237 | METHODS FOR FABRICATING FINFET SEMICONDUCTOR DEVICES USING ASHABLE SACRIFICIAL MANDRELS - Methods are provided for fabricating a semiconductor device on and in a semiconductor substrate. In accordance with an exemplary embodiment of the invention, one method comprises forming a sacrificial mandrel overlying the substrate, the sacrificial mandrel having sidewalls. Sidewall spacers are formed adjacent the sidewalls of the sacrificial mandrel. The sacrificial mandrel is removed using an ashing process, and the substrate is etched using the sidewall spacers as an etch mask after removal of the sacrificial mandrel. | 2010-10-21 |
20100267238 | METHODS FOR FABRICATING FINFET SEMICONDUCTOR DEVICES USING PLANARIZED SPACERS - Methods of fabricating a semiconductor device on and in a semiconductor substrate are provided. In accordance with an exemplary embodiment of the invention, one method comprises forming a sacrificial mandrel overlying the substrate, wherein the sacrificial mandrel has sidewalls. Sidewall spacers are formed adjacent the sidewalls of the sacrificial mandrel, the sidewall spacers having an upper portion and a lower portion. The upper portion of the sidewall spacers is removed. The sacrificial mandrel is removed and the semiconductor substrate is etched using the lower portion of the sidewall spacers as an etch mask. | 2010-10-21 |
20100267239 | METHOD AND APPARATUSES FOR REMOVING POLYSILICON FROM SEMICONDUCTOR WORKPIECES - Methods and apparatuses for removing polysilicon material from a semiconductor workpiece are disclosed. A particular method includes contacting a polishing pad with a semiconductor workpiece having a surface polysilicon material. The method also includes disposing a polishing liquid between the polysilicon material and the polishing pad. The polishing liquid contains an oxidizer that does not include metal elements. The method further includes moving at least one of the semiconductor workpiece and the polishing pad relative to the other while the semiconductor workpiece contacts the polishing pad and the polishing liquid. At least some of the polysilicon material is removed while the polysilicon material contacts the oxidizer in the polishing liquid, as at least one of the semiconductor workpiece and the polishing pad moves relative to the other. | 2010-10-21 |
20100267240 | PITCH MULTIPLICATION SPACERS AND METHODS OF FORMING THE SAME - Spacers in a pitch multiplication process are formed without performing a spacer etch. Rather, the mandrels are formed over a substrate and then the sides of the mandrels are reacted, e.g., in an oxidization, nitridation, or silicidation step, to form a material that can be selectively removed relative to the unreacted portions of the mandrel. The unreacted portions are selectively removed to leave a pattern of free-standing spacers. The free-standing spacers can serve as a mask for subsequent processing steps, such as etching the substrate. | 2010-10-21 |
20100267241 | Process for the production of microelectromechanical systems - Elemental fluorine and carbonyl fluoride are suitable etchants for producing microelectromechanical devices (“MEMS”). They are preferably applied as mixtures with nitrogen and argon. If applied in Bosch-type process, C | 2010-10-21 |
20100267242 | Selective Etching Of Semiconductor Substrate(s) That Preserves Underlying Dielectric Layers - In a method of vapor etching, a sample that includes a first layer atop of and in contact with a second layer which is atop of and in contact with a third layer, wherein at least the first and second layers are comprised of different materials. The sample is etched by a vapor etchant under first process conditions that cause at least a part of the first layer to be fully removed while leaving the third layer and the second layer underlying the removed part of the first layer substantially unetched. The sample is then etched by the same or a different vapor etchant under second process conditions that cause at least the part of the second layer exposed by the removal of the at least part of the first layer to be fully removed while leaving the third layer underlying the removed part of the second layer substantially unetched. | 2010-10-21 |
20100267243 | PLASMA PROCESSING METHOD AND APPARATUS - In the plasma processing by an electrically negative gas, the in-plane uniformity of plasma processing is enhanced compared to the conventional case by controlling the ion density in the plasma. Not only is a processing gas being an electrically negative gas introduced from a processing gas source | 2010-10-21 |
20100267244 | METHOD FOR TREATING GERMANIUM SURFACES AND SOLUTIONS TO BE EMPLOYED THEREIN - The present invention concerns an improved method for treating germanium surfaces in order to reveal crystal defects. | 2010-10-21 |
20100267245 | HIGH EFFICIENCY EPITAXIAL CHEMICAL VAPOR DEPOSITION (CVD) REACTOR - The present disclosure presents a chemical vapor deposition reactor having improved chemical utilization and cost efficiency. The wafer susceptors of the present disclosure may be used in a stackable configuration for processing many wafers simultaneously. The reactors of the present disclosure may be reverse-flow depletion mode reactors, which tends to provide uniform film thickness and a high degree of chemical utilization. | 2010-10-21 |
20100267246 | Silicon Dioxide Deposition Methods Using at Least Ozone and TEOS as Deposition Precursors - Embodiments disclosed herein pertain to silicon dioxide deposition methods using at least ozone and tetraethylorthosilicate (TEOS) as deposition precursors. In one embodiment, a silicon dioxide deposition method using at least ozone and TEOS as deposition precursors includes flowing precursors comprising ozone and TEOS to a substrate under subatmospheric pressure conditions effective to deposit silicon dioxide-comprising material having an outer surface onto the substrate. The outer surface is treated effective to one of add hydroxyl to or remove hydroxyl from the outer surface in comparison to any hydroxyl presence on the outer surface prior to said treating. After the treating, precursors comprising ozone and TEOS are flowed to the substrate under subatmospheric pressure conditions effective to deposit silicon dioxide-comprising material onto the treated outer surface of the substrate. Other embodiments are contemplated. | 2010-10-21 |
20100267247 | Dual Frequency Low Temperature Oxidation of a Semiconductor Device - Methods and apparatus for forming an oxide layer on a semiconductor substrate are disclosed. A two frequency plasma source is used to form a plasma in a plasma reactor. In various embodiments, different quantities of power are supplied to a power source operating at the first frequency and a power source operating at the second frequency over time. | 2010-10-21 |
20100267248 | Post Treatment Methods for Oxide Layers on Semiconductor Devices - Methods and apparatus for post treating an oxide layer on a semiconductor substrate are disclosed. In one or more embodiments, the oxide layer is formed by thermal oxidation or plasma oxidation and treated with a plasma comprising helium. The helium-containing plasma may also include hydrogen, neon, argon and combinations thereof. In one or more embodiments, a SiO | 2010-10-21 |
20100267249 | QUARTZ WINDOW HAVING GAS FEED AND PROCESSING EQUIPMENT INCORPORATING SAME - Methods and apparatus for providing a process gas to a substrate in a processing system are disclosed herein. In some embodiments, the substrate processing system may include a process chamber having a substrate support disposed therein; a light source disposed above the process chamber to direct energy towards the substrate support; and a window assembly disposed between the light source and the substrate support to allow light energy provided by the light source to enter the process chamber towards the substrate support, wherein the window assembly includes an inlet to receive a process gas and one or more outlets to distribute the process gas into the process chamber. | 2010-10-21 |
20100267250 | Device Interfaces With Non-Mechanical Securement Mechanisms - A number of device interfaces that may use magnetic forces to secure different devices together are disclosed. The device interfaces may include magnetic material positioned in between parallel rows of electrical contact elements in the devices. Magnetic forces may be exerted on and from the electrical contact elements to cause mutually cooperating elements from the devices to be substantially attracted and drawn towards each other. Once the contact elements make contact and are engaged, their mutual attractive forces may cause them to resist being separated. Additionally, the distal ends of the contact elements may have mutually cooperating male and female engagement surface configurations. | 2010-10-21 |
20100267251 | CABLE MANAGEMENT SYSTEM - A cable management system. The system has the following: (a) a computer or network device having a plurality of first communication connectors, (b) one or more adapters having a plurality of second communication connectors and a plurality of third communication connectors, and (c) a plurality of patch cables. Each of the plurality of first connectors has an assigned corresponding connector among the plurality of second connectors. Each of the plurality of second connectors has an assigned corresponding connector among the plurality of third connectors. Each of the plurality of third connectors has an assigned corresponding connector among the plurality of patch cables. The one or more adapters is adapted to being connected to or being removed from the device. The first connectors are adapted to being connected to and in electrical connection with the plurality of second connectors or being disconnected therefrom. The plurality of patch cables are adapted to being connected to or removed from the one or more adapters. The plurality of patch cables are adapted to being connected to and in electrical connection with the plurality of third connectors or being disconnected therefrom. | 2010-10-21 |
20100267252 | ELECTRONIC COMPONENT AND ELECTRONIC CONTROL DEVICE USING THE SAME - An electronic component includes an electronic component body having lead wires led out therefrom and compliant pins. Compliant pins include connections to be connected to lead wires and are in contact, at end surfaces on the other side thereof, with a lead-wire lead-out surface of the electronic component body. Compliant pins are provided at one end thereof with connectors to be press-fitted into the throughholes of a circuit board. | 2010-10-21 |
20100267253 | Electrical Connector - An electrical connector ( | 2010-10-21 |
20100267254 | SOCKET ASSEMBLY WITH PICK-UP CAP SERVING AS STAND-OFF - An socket assembly mounted on a printed circuit board for receiving a IC package, comprises an insulative housing defining a plurality of passageways, a plurality of contacts received in the passageways and a pick-up cap covering the insulative housing. The insulative housing has four sidewalls surrounding the passageways. The pick-up cap has three steps, a first step covering the passageways of the housing, a second step seated on top faces of the sidewalls, and a third step set against the printed circuit board. The three steps of the pick-up cap can efficiently protect the insulative housing and the contacts. | 2010-10-21 |
20100267255 | ELECTRIC CONNECTOR WITH A BLUETOOTH DEVICE THEREIN - An electric connector includes an electrically insulative housing, which has connector receiving chambers and an accommodation space arranged in a stack, metal terminals respectively mounted in the connector receiving chambers, the metal terminals each having a front contact end respectively extended to an insertion slot on the front side of each connector receiving chamber for the contact of an external electric connector and a rear bonding portion extended out of the bottom side of the electrically insulative housing for bonding to an external circuit board, and a Bluetooth device mounted in the accommodation space for receiving an external wireless signal, and a metal shield capped on the electrically insulative housing for EMI protection. | 2010-10-21 |
20100267256 | Electric Connector - A board mount connector ( | 2010-10-21 |
20100267257 | SOCKET CONNECTOR WITH CONTACT TERMINAL HAVING WAVEFORM ARRANGEMENT ADJACENT TO TAIL PORTION PERFECTING SOLDER JOINT - Disclosed herewith a socket connector configured with an insulative housing defining a mating interface surrounded with peripheral walls and a mounting surface. A plurality of passageways is defined between the mating interface and the mounting surface and having an opening at the mounting surface. The insulative housing includes an encampment associated with each of the passageway at the mounting surface, and includes an extension crossing over an inner wall of the passageway to substantially narrow the opening of the opening. The socket connector furthers includes a plurality of contact terminals each received in the passageway and further includes a curvilinear solder portion extending beyond the mounting surface. And the socket connector further is incorporated with a plurality of solder balls each disposed between the encampment and the curvilinear solder portion. | 2010-10-21 |
20100267258 | WEDGE OF A CABLE CONNECTOR GROUNDING DEVICE - A wedge of a cable connector grounding device includes a body. One side of the body is formed with a spirally conjunct seat inside which a concave spirally conjunct slot is formed. Two concave slots opposite to each other are formed. At the bottom of spirally conjunct slot, a position limiting groove is formed from the concave slots towards the center and a concave camber is formed along the circumferential wall toward the center. A wedge crest line is defined at a section of connection between the concave camber and the position limiting groove. A packing unit is provided and spirally connected to the spirally conjunct slot. The packing unit may be used to tighten the lead wire passing through the position limiting groove for achievement of the longitudinal position limiting. The wedge crest lines are used to wedge the lead wire transversally and tighten the lead wire. | 2010-10-21 |
20100267259 | EXTERNAL USB CARD READER - An external universal serial bus (USB) card reader includes a cover, a circuit board movably received in the cover, a USB connector, and a connector. The USB connector is mounted to a front end of the circuit board. The connector is mounted to a back end of the circuit board and electrically connected to the USB connector. A through cutout is defined in the cover to allow the USB connector pass through. An inserting slot is defined in the cover to allow a memory card pass through. The USB connector is operable to be forced by the memory card to drive the circuit board to move in the cover, resulting in the USB connector extending out of the cover or retracting back into the cover through the through cutout. | 2010-10-21 |
20100267260 | CARD CONNECTOR HAVING AN IMPROVED SPRING MEMBER - A card connector ( | 2010-10-21 |
20100267261 | USB/ESATA COMBO RECEPTABLE FEATURED WITH GROUND LAYER RETARDING INTERFACES THEREBETWEEN - An electrical connector includes an insulative housing defining a mating cavity, two parallel and stacked mating portions respectively forwards extending into the mating cavity, sets of contact retained in the housing and a grounding member retained in the housing. The first mating portion defines thereon a first surface; the second mating portion spaces from the first mating portion and defines thereon a second surface opposite to the first surface. The sets of contact include a first set of contacts each defining a contacting section exposed upon the first surface and a second set of contacts each defining a deflectable cantilevered beam accessible from the second face. The grounding member is disposed between the first and second mating portions to reduce the cross-talk between the first and second sets of contacts. | 2010-10-21 |
20100267262 | ELECTRICAL CONNECTOR FEATURED WITH USB/ESATA INTERFACES - An electrical connector includes an insulative housing defining a mating cavity, a tongue portion forwards extending into the mating cavity and defining thereon first and second faces opposite to each other, and first and second sets of contacts retained to the housing. The first set of contacts includes pairs of differential pairs and grounding contacts arranged at opposite sides of the differential pairs, and each of the differential pairs defines a first contacting section disposed in the first face and a soldering section. The second set of contacts each defines a deflectable cantilevered beam accessible from the second face. At least one of the grounding contacts defines a main section retained in the tongue portion and further extending into the mating cavity along the tongue portion, and the main section is disposed in a plane perpendicular to the first face. | 2010-10-21 |
20100267263 | Lamp Socket and Display Device Having the Same - A lamp socket constructed to achieve an ultrathin display device and minimize friction sound due to thermal expansion and shrinkage, and a display device having the lamp socket are provided. The lamp socket includes a first body part, a connection terminal that is connected to the first body part and is electrically connected to a lead of a lamp, a second body part that is spaced apart from the first body part, an elastic part that connects the first body part with the second body part and expands or shrinks in a lengthwise direction of the lamp, and a fixing part that extends from the second body part. | 2010-10-21 |
20100267264 | WATERPROOF CONNECTOR - In a waterproof connector, an annular packing | 2010-10-21 |
20100267265 | IN-LINE CONNECTOR STACK WITH TESTING CAPABILITY - Connector assemblies for use with implantable medical devices having easy to assemble contacts are disclosed. The connector assemblies are generally formed by coupling a plurality of ring contacts, sealing rings, and spring contact elements together with at least one holding ring to form a connector having a common bore for receiving a medical lead cable. Contact grooves or spring chambers for positioning the spring contact elements are formed in part by assembling multiple components together. A further aspect is a provision for encasing each connector assembly or stack inside a thermoset layer or a thermoplastic layer before over-molding the same to a sealed housing. | 2010-10-21 |
20100267266 | AIRTIGHT ELECTRICAL SOCKET - A water and/or airtight electrical socket for portable electronic devices includes sealing elements that are shaped like an arc, and arranged to seal only a portion of the perimeter of the socket-plug interface. When this arc element experiences pressure, it will mechanically relay the force caused by the pressure only to that section of the perimeter of the socket-plug interface that it is arranged to seal. It will not relay mechanical forces any further. This way, the mechanical effect of any extra asymmetric pressure will simply be limited to increasing the pressure of the seal in the perimeter section of that particular sealing element, thereby tightening the seal further still. This allows the socket opening to be sealed in a water- and/or airtight manner even in asymmetric pressure conditions, both when there is no plug in the socket and also when a plug is inside the socket. | 2010-10-21 |
20100267267 | CARD CONNECTOR WITH A SPRING MEMBER FOR RETAINING AN ELECTRICAL CARD - A card connector includes an insulative housing ( | 2010-10-21 |
20100267268 | MAINS CONNECTION OF A DOMESTIC APPLIANCE - A domestic appliance that includes at least one mains connection for the supply of power to the domestic appliance from a building supply mains. In an exemplary embodiment of the invention, the mains connection may include data transfer contacts. | 2010-10-21 |
20100267269 | ELECTRICAL CONNECTOR ASSEMBLY - An electrical connector assembly includes a cable connector; a receptacle connector connected to the cable connector in a first direction; and a locking protruding portion disposed on one of the cable connector and the receptacle connector. The locking protruding portion has a first length in a second direction perpendicular to the first direction. The electrical connector assembly further includes a locking groove portion disposed in the other of the cable connector and the receptacle connector. The locking groove portion has a second distance in the second direction smaller than the first length, so that the locking protruding portion can be inserted into the locking groove portion only in an inclined state and the receptacle connector is not disconnected upwardly from the cable connector when the locking protruding portion is situated in the locking groove portion. | 2010-10-21 |
20100267270 | PLUG AND PLUG CONNECTOR FOR ROBOTS - The invention relates to a socket-sided plug (B) or a pin-sided plug (S), in particular for a tool changing system, for electrically connecting a tool to a robot hand. Said plug comprises a plug housing ( | 2010-10-21 |
20100267271 | RELEASABLY ENGAGING HIGH DEFINITION MULTIMEDIA INTERFACE PLUG - A releasably engaging high definition multimedia plug comprises a plug body and an actuator operable with the plug body to move a locking tab of the plug and facilitate releasable engagement of the plug with a standard high definition multimedia receptacle. A corresponding method of releasably securing a high definition multimedia interface plug into standard high definition multimedia interface receptacle is also provided. | 2010-10-21 |
20100267272 | Wire Containment Cap - A wire containment cap includes a first side having a plurality of retainers for retaining wires, and a second side opposite the first side. Two sidewalls extend between the first side and the second side, and a support rib extends between the two sidewalls. The support rib includes two pair separators for separating wire pairs. In one embodiment, a plurality of sloped pair splitters is located between two of the retainers and includes a sharp point for cutting through insulation material on a pair of bonded wires. A communication jack assembly including a front portion and the wire containment cap is also described. | 2010-10-21 |
20100267273 | LAMP SOCKET - A lamp socket has a housing forming a cavity centered on an axis and having a generally cylindrical side wall and a floor, an internally threaded sleeve coaxially received in the cavity, a central socket contact on the floor at the axis, and an annular disk separate from the housing, surrounding the central contact. The disk is formed on the axis with a central aperture and is spaced at the aperture substantially further from the floor than the central socket contact. Thus only a lamp base with a central lamp contact on an extension stem can fit in the socket and engage through the aperture and past the disk to make contact with the central socket contact. | 2010-10-21 |
20100267274 | COMMUNICATION PORT IDENTIFICATION SYSTEM - A communication port identification system enables an intelligent interconnect patch panel to reliably track connections to network switches. Network switch ports are provided with port ID modules that are inserted into the ports. Intelligent interconnect patch cords each utilize a patch cord microcontroller and out-of-band conductors to enable communication between an intelligent interconnect patch panel and the port ID modules of the switch port. Each port ID module is provided with a unique identification number, and the intelligent interconnect patch panel is thereby able to track all of its connections to the port ID modules in real time, and to update a network management system accordingly. | 2010-10-21 |
20100267275 | DETECTING DEVICE AND CONNECTOR MODULE THEREOF - A detecting device is used to detect the connection of an electronic device. The detecting device includes a circuit board and a connector module. The circuit board includes a power terminal and a signal processing unit. The connector module includes a body and a detecting member. The body has a connecting port and a connecting sidewall. The detecting member is disposed on the connecting sidewall and electrically connected to the power terminal and the signal processing unit, and it has a potential. When a plug of the electronic device is connected to the connecting port, the plug contacts the detecting member to change the potential. The change of the potential is detected by the signal processing unit such that the connection between the electronic device and the connector module is confirmed. | 2010-10-21 |
20100267276 | Strap with transmission line functionality - A strap with transmission line functionality includes a strap body, a first connecting end and a second connecting end. The strap body has at least one signal line wrapped therein. The first connecting end is disposed at one end of the strap body and the second connecting end is disposed at an opposite end of the strap body so that signals can be transmitted between the first connecting end and the second connecting end via the signal line disposed in the strap body. The first connecting end is directly fixed to and electrically connected with an electronic product, and a signal connector is also disposed at the second connecting end to connect with an external device. The strap body is substantially looped into a circular form so as to be used as a wrist strap or a neck strap of the electronic product. | 2010-10-21 |
20100267277 | WATTHOUR METER SOCKET LOCK ADAPTER - A watthour meter socket adapter has housing formed of snap together rear and front housings. The front housing surrounds but allows access to jaw contacts and terminals mounted in the rear housing by a watthour meter and electric power conductors. An aperture in the front housing engages a socket adapter mounting fastener extendible through the aperture to attach the socket adapter to a mounting surface. The fastener and aperture resist separation of the front housing from the rear housing when a watthour meter is removed from the socket adapter. A clip extends from the front housing through an aperture in a terminal cover attachable to the front housing and receives a seal lock member. Another clip on the front housing extends through the terminal cover and is engaged by an expandable ring lock clip. A meter surge guard is removably mountable to the rear housing and exteriorly of the front housing. | 2010-10-21 |
20100267278 | OUTLET ASSEMBLIES & METHODS OF INSTALLATION THEREOF - Outlet assemblies are provided that include a faceplate having a planar exterior surface, one or more receptacles, a flatrim, and an electrical box. The faceplate is connected to the flatrim (with the one or more receptacles disposed between the faceplate and flatrim). The faceplate, receptacle(s), and flatrim are installed into the electrical box such that the exterior surface of the faceplate is flush with the outer wall that surrounds the electrical box. The flatrim is adapted to be interchangeably connected to, for example, two receptacles or a single receptacle, without having to damage and/or repair the surrounding wall. | 2010-10-21 |
20100267279 | POWER RECEPTACLE - A power receptacle suitable for desktop use. The power receptacle has a casing ( | 2010-10-21 |
20100267280 | ELECTRIC-WIRE BUNDLE WITH WATER-PROOFING CONNECTOR - A connector-equipped electric-wire bundle including a plurality of types of electric wires different in conductor cross-sectional area and elongation. The connector-equipped electric-wire bundle comprises a first electric wire having a first conductor, and a second electric wire having a second conductor with a greater cross-sectional area and a greater breaking elongation than those of the first conductor. A second connector terminal having, as a second crimp portion, only a conductor barrel and a water-proofing-plug barrel is attached to an end of the second electric wire, and a first connector terminal having, as a first crimp potion, a conductor barrel, a water-proofing-plug barrel and an intermediate barrel is attached to an end of the first electric wire. The intermediate barrel is crimped onto an insulating cover in an intermediate region between the end of the conductor of the first electric wire and a water-proofing plug. | 2010-10-21 |
20100267281 | CABLE CONNECTOR ASSEMBLY WITH A FRONT SHELL - A cable connector assembly includes an insulative housing ( | 2010-10-21 |
20100267282 | SOCKET STRUCTURE WITH DUPLEX ELECTRICAL CONNECTION - A socket structure includes a base; a slot, disposed on one end of the base and to be connected to one plug having one row of terminals; a tongue disposed on a front end of the base and within the slot so that chambers of the slot on two sides of the tongue may be normally and oppositely inserted and positioned into the slot; one row of first contacts separately arranged on one surface of the tongue, wherein each first contact is electrically connected to a first pin extending out of the base; and one row of second contacts separately arranged on the other surface of the tongue. Each second contact is electrically connected to a second pin extending out of the base. When the plug is inserted into the slot, the row of terminals of the plug are electrically connected to the row of first or second contacts. | 2010-10-21 |
20100267283 | Communications medium connector with integrated common-mode noise suppression - According to one exemplary embodiment, a connector for coupling a communications medium to an electronic device includes a common-mode suppression block coupled to a number of connector pins. The common-mode suppression block is configured to reduce common-mode noise coupling between the communications medium and the connector pins in the connector. The common-mode suppression block is further configured to provide substantially no attenuation to a differential-mode signal. In one embodiment, the communications medium is an Ethernet cable and the connector is an Ethernet plug. In one embodiment, the common-mode suppression block comprises common-mode chokes. In one embodiment, the connector is an RJ45 plug. | 2010-10-21 |
20100267284 | DEVICE AND METHOD FOR THE CAPTIVE ACCOMMODATION OF A SCREW IN A TERMINAL - The invention relates to a terminal having a housing and a duct for accommodating a screw, wherein a securing device is provided that has a holding unit configured on the housing in order to enable the captive accommodation of the screw in the duct. The securing device enables an insertion of a screw into the duct in the base state, wherein a secured state is achieved after insertion of a screw by a plastic deformation of the holding unit into the free cross-section of the duct in which a screw is captively accommodated. | 2010-10-21 |
20100267285 | Circuit interface device - A circuit interface device is presented. A circuit board is secured by a circuit board cover, a plurality of electrical contacts is disposed on the circuit board, and a connector cover is coupled to a front end of the circuit board, such that a socket disposed at one end of the connector cover is corresponding to an upper side of the electrical contacts of the circuit board, thereby forming a connector of the circuit interface device. As such, through a structural design of buckling the connector cover on the circuit board without completely covering the connector cover on outer edge of the circuit board, a thickness of the connector cover covering the circuit board cover is reduced. | 2010-10-21 |
20100267286 | SYSTEMS AND METHODS FOR PROVIDING A TRIMLESS ELECTRONIC DEVICE PORT - This invention is directed to systems and methods for providing a port in an electronic device housing that is electrically isolated from a conductive portion of a connector inserted in the port without the use of a nonconductive trim in the port. In some embodiments, the connector may include a non-conductive flange or ring operative to contact the housing and the portions of the housing within the port. In some embodiments, a thin layer of non-conductive material may be applied to the portions of the housing within the port to prevent conductive portions of the connector from coming into contact with the housing (e.g., and grounding the conductive portion. This invention may be of particular interest when the conductive portion that may come into contact with the housing is not used to ground the connector. | 2010-10-21 |
20100267287 | CONNECTOR UNIT - A connector unit which is capable of suppressing lowering of a clicking feeling, even if the fitting and removing of connectors to and from each other is repeated. A spring portion that receives a contact portion of each of plug contacts of a plug connector when a receptacle connector and the plug connector are fitted to each other is formed on each of receptacle contacts of the receptacle connector. A protrusion is formed on the contact portion of each plug contact. The spring portion is formed to have an auxiliary contact portion that is urged by the protrusion when both of the connectors are fitted to each other, and a recess that receives the protrusion when the both of the connectors are fitted to each other. | 2010-10-21 |
20100267288 | MODULAR CONNECTOR - An electrical connector includes at least two parts: a housing having a mating side (MS) and a rear side (RS) and a terminal module having a mating side and a rear side. One part includes a mounting structure and the other part includes a corresponding receiving structure for receiving the mounting structure of the other part. The mounting structure extends in a direction from the mating side to the rear side of the part and includes a cross-section perpendicular to that direction, which cross-section has an asymmetric profile. | 2010-10-21 |
20100267289 | Contact and connector - A contact is formed of a single metal sheet. The contact includes an upper spring portion configured to press an upper surface of a plate-like connection target in a downward direction and a lower spring portion configured to press a lower surface of the plate-like connection target in an upward direction. The lower spring portion is deformable independently of the upper spring portion. | 2010-10-21 |
20100267290 | SPRING CONNECTOR AND TERMINAL DEVICE - A spring connector includes an inner conductor and an outer conductor. The inner conductor is formed of a conductive material, and has a small-diameter portion, a large-diameter portion, and a resilient portion axially disposed so as to be integrally and continuously formed with each other. The outer conductor is formed of a conductive material, and is provided with a hole having a predetermined inside diameter. The outer conductor accommodates the large-diameter portion and the resilient portion in the hole while the small-diameter portion protrudes from an end of the hole. | 2010-10-21 |
20100267291 | SWAGING PROCESS FOR IMPROVED COMPLIANT CONTACT ELECTRICAL TEST PERFORMANCE - A spring contact assembly having a first plunger with a tail portion having a flat contact surface and a swagable surface and a second plunger having a tail portion with a flat contact surface and a swagable surface wherein the flat contact surfaces are overlapping and are surrounded by an external compression spring such that the swagable surfaces are swaged by the coils of the spring during the initial compression of the spring. | 2010-10-21 |
20100267292 | PIN OR SOCKET CONTACT WITH RESILIENT CLIP - An electrical pin or socket terminal includes a vertical tubular body portion, and a spring clip portion connected with the upper end of the body portion. The spring clip portion includes two opposed electrical contacts at least one of which is resiliently biased toward the other. A separating arrangement is operable between a separated condition retaining the contacts in separated spaced relation for longitudinally receiving therebetween a conductor bare end, and a released condition in which the contacts are released for resilient electrical engagement with diametrically opposed surfaces of the conductor bare end. In one embodiment, the spring clip portion includes a pair of parallel spaced struts the upper ends of which are reversely bent toward each other. In another embodiment, a leaf spring electrical contact biases the bare conductor end against a stationary electrical contact. | 2010-10-21 |
20100267293 | OUTBOARD MOTOR CONTROL APPARATUS - In an apparatus for controlling operation of an outboard motor mounted on a boat and having a torque converter equipped with a lockup clutch, it is configured to calculate a speed ratio of the torque converter based on an input rotation speed and output rotation speed of the torque converter, detect manifold absolute pressure of the engine, control the lockup clutch to ON when the calculated speed ratio has been equal to or greater than a reference value, and control the lockup clutch to OFF when the manifold absolute pressure has been decreased by a first predetermined value or more. With this, it becomes possible to prevent the boat speed from decreasing even when the resistance of water flow acting on the boat increases due to the influence of a wave etc., thereby maintaining the maximum speed. | 2010-10-21 |
20100267294 | OUTBOARD MOTOR CONTROL APPARATUS - In an apparatus for controlling operation of an outboard motor mounted on a boat and having a torque converter equipped with a lockup clutch, it is configured to have a clutch controller that controls the lockup clutch to ON when a speed ratio of the torque converter is equal to or greater than a reference value, the clutch controller being configured to determine whether a throttle valve is at about a fully-opened position and to control the lockup clutch to ON when the speed ratio becomes equal to or greater than a predetermined value set smaller than the reference value before the speed ratio reaches the reference value, and the throttle valve is discriminated to be at about the fully-opened position. With this, it becomes possible to reliably make a lockup clutch ON when the acceleration is completed, so that the boat speed can reach the maximum speed. | 2010-10-21 |
20100267295 | SHIP PROPULSION SYSTEM HAVING A PUMP JET - The invention relates to a ship propulsion system (S) having a pump jet (P) comprising a pump housing (G) and a drive motor, wherein the drive motor is a solenoid motor (M) integrated into the pump housing (G). | 2010-10-21 |
20100267296 | OUTBOARD MOTOR CONTROL APPARATUS - In an apparatus for controlling operation of an outboard motor mounted on a boat and having a torque converter equipped with a lockup clutch, it is configured to regulate a trim angle relative to the boat by trim-up operation and trim-down operation; calculate a speed ratio of the torque converter based on an input rotation speed and output rotation speed of the torque converter; and control operation of the trim angle regulator based on the calculated speed ratio. With this, it becomes possible to mitigate a deceleration feel to be generated after the acceleration is completed, and easily sets a trim angle of after the trim-up operation to an optimal value. | 2010-10-21 |
20100267297 | DIRECT-PROPULSION EQUIPMENT WITH AN INTERNAL COMBUSTION ENGINE FOR A BOAT, IN WHICH EQUIPMENT THE ENGINE AND THE PROPELLER CONSTITUTE A UNIT ASSEMBLY CAPABLE OF PIVOTING VERTICALLY AND HORIZONTALLY - The subject of the present invention is direct-propulsion equipment with an internal combustion engine for a boat, in which the engine and the propeller constitute a unit assembly capable of pivoting vertically and horizontally. It consists of a cradle ( | 2010-10-21 |
20100267298 | ENGINE FOR OUTBOARD MOTOR - An engine for an outboard motor includes an oil filter. A first oil passage has a communication duct disposed at a position lower than that of the oil filter and communicating with a crank chamber. The communication duct is closed by a drain valve that can be opened and closed manually. Opening the drain valve allows the oil accumulated in the first oil passage to flow down into the crank chamber through the communication duct. | 2010-10-21 |
20100267299 | Vinyl Chloride, Acrylate, And Urethane Polymers With Increased Moisture Vapor Permeability And Static Dissipative Properties - Vinyl chloride polymer compositions, optionally plasticized, containing a hydrophilic polymer (e.g., a hydrophilic polyurethane or hydrophilic vinyl polymer) are described for use as coatings and films with increased moisture vapor transmission and/or static dissipative properties. Films from this material are useful as fluid barriers that allow diffusion of moisture vapors. Similar modifications can be made to acrylate and urethane polymers. | 2010-10-21 |
20100267300 | METHOD FOR PRODUCING REACTIVE CYCLODEXTRINS TEXTILE MATERIAL PROVIDED WITH SAME, AND USE OF SAID CYCLODEXTRIN DERIVATIVES - The invention relates to a process for the preparation of reactive cyclodextrins, in which process the cyclodextrins CD are reacted with a bifunctional alkyl compound X—(CH | 2010-10-21 |
20100267301 | PRINTABLE FILM - The invention relates to printable films comprising a substrate and at least a surface layer, said layer covering at least one face of said substrate and comprising a water-dispersible polymer and an ethylenically unsaturated compound; to a process for the manufacture of such films; to printed films and especially to printed labels obtained from such printable films. | 2010-10-21 |
20100267302 | SILICONE GEL ADHESIVE CONSTRUCTION - A silicone gel adhesive construction comprises (a) a porous backing, (b) an acrylic copolymer pressure sensitive adhesive layer on at least a portion of one side of the porous backing, and (c) a cured silicone gel adhesive on the pressure sensitive adhesive layer. | 2010-10-21 |
20100267303 | HYDROPHOBIC SURFACE FINISH AND METHOD OF APPLICATION - The present invention relates to a method for hydrophobization of a fabric surface comprising providing a stream of a substantially anhydrous gas, passing said gas over or through a substantially anhydrous liquid of an alkylsilane, preferably a fluorinated alkylsilane to provide an alkylsilane, preferably a fluorinated alkylsilane vapor and bringing said vapor in contact with the fabric surface, thereby allowing the optionally fluorinated alkylsilane to bind covalently to the fabric surfaced. The present invention further relates to a fabric comprising a superhydrophobic surface finish prepared by a method of the invention and to a device for carrying out the method of the invention. | 2010-10-21 |