42nd week of 2013 patent applcation highlights part 15 |
Patent application number | Title | Published |
20130270478 | MIXING DEVICE - Particular aspects provide compositions comprising an electrokinetically altered oxygenated aqueous fluid, wherein the oxygen in the fluid is present in an amount of at least 25 ppm. In certain aspects, the electrokinetically altered oxygenated aqueous fluid comprises electrokinetically modified or charged oxygen species present in an amount of at least 0.5 ppm. In certain aspects the electrokinetically altered oxygenated aqueous fluid comprises solvated electrons stabilized by molecular oxygen, and wherein the solvated electrons present in an amount of at least 0.01 ppm. In certain aspects, the fluid facilitates oxidation of pyrogallol to purpurogallin in the presence of horseradish peroxidase enzyme (HRP) in an amount above that afforded by a control pressure pot generated or fine-bubble generated aqueous fluid having an equivalent dissolved oxygen level, and wherein there is no hydrogen peroxide, or less than 0.1 ppm of hydrogen peroxide present in the electrokinetic oxygen-enriched aqueous fluid. | 2013-10-17 |
20130270479 | Process for Producing Surface Postcrosslinked Water-Absorbing Polymer Particles - A process for producing surface postcrosslinked water-absorbing polymer particles, wherein the water-absorbing polymer particles are coated, before, during or after the surface postcrosslinking, with at least one salt of a trivalent metal cation and a glycinate anion. | 2013-10-17 |
20130270480 | CYCLOHEXENE-3,6-DIYL COMPOUND, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - To provide a compound, when the compound has both a high clearing point and a low crystallization temperature, having a wide temperature range of a liquid crystal phase and also an excellent solubility in other liquid crystal compounds, and further having general physical properties necessary for the compound, namely, stability to heat, light and so forth, a suitable optical anisotropy and a suitable dielectric anisotropy. A compound is represented by formula (1): | 2013-10-17 |
20130270481 | LIQUID CRYSTALLINE POLYESTER AND PRODUCTION METHOD OF THE SAME - A liquid crystalline polyester having structural units (I), (II), (III), (IV) and (V), wherein
| 2013-10-17 |
20130270482 | RARE EARTH GARNET SCINTILLATOR AND METHOD OF MAKING SAME - A detector for detecting high-energy radiation is disclosed. The detector includes scintillating material with a garnet structure includes gadolinium, yttrium, cerium, gallium, and aluminum. The scintillating material is expressed as (Gd | 2013-10-17 |
20130270483 | CATALYTICAL GASIFIER CONFIGURATION FOR BIOMASS PYROLYSIS - The invention relates to systems and methods for producing synthesis gas. In particular, the systems of the present invention include two catalytic reactors in series, a wet reformer/gasifier followed by a dry reformer. The systems produce synthesis gas with very little to no methane. | 2013-10-17 |
20130270484 | Compact Pressure Swing Reformer - Embodiments of a compact pressure swing reformer are disclosed. Certain embodiments have a construction comprising multiple rotating reformer beds, high temperature rotary valves at the bed ends, and E-seals to seal the beds to the valves. Several possible designs for introducing reactants into the beds also are disclosed. The multiple reformer beds are configured to provide for pressure equalization and ‘steam push’. The compact pressure swing reformer is suitable for use in fuel cell vehicle applications. | 2013-10-17 |
20130270485 | COMPOSITE FOR LI-ION CELLS AND THE PREPARATION PROCESS THEREOF - Disclosed herein is a composite for Li-ion cells, comprising an active material particle for Li-ion cells and an electronically conductive elastic material bound or attached to the active material particle. According to the present invention, the electronically conductive elastic material bound or attached to the active material particle allows the particle to maintain electronic contact with the electrode laminate matrix despite ongoing movement or expansion and contraction of the active material particles, such that the cycling efficiency and reversible capacity of the Li-ion cells prepared from the composite of the present invention is improved. | 2013-10-17 |
20130270486 | POLYMER COMPOUND AND LIGHT-EMITTING DEVICE USING SAME - A polymer compound having a constitutional unit represented by the following formula (1) and a constitutional unit represented by the following formula (2): | 2013-10-17 |
20130270487 | PROCESS FOR PRODUCTION OF ELECTRICALLY CONDUCTIVE POLYIMIDE FILM - A polyamic acid that includes a polyamic acid (A) obtained by reacting a tetracarboxylic anhydride containing 3,3′,4,4′-biphenyltetracarboxylic dianhydride with a diamine compound containing 4,4′-oxydianiline, a conductivity-imparting agent (B), and an imidization accelerator (C) and in which the conductivity-imparting agent is dispersed is used as a coating liquid; the coating liquid is applied onto a support; the obtained coating film is dried and imidized; and an electrically conductive polyimide film having a desired electric resistivity and good mechanical properties is consequently produced with good productivity. | 2013-10-17 |
20130270488 | METAL PARTICLE POWDER AND PASTE COMPOSITION USING SAME - It is important that the metal particles used in a conductive paste used for wiring have the characteristic of being easily dispersed in a polar solvent in combination with another material such as a resin used in a paste. Provided is a metal particle powder which exhibits a pH value of 6 or less when 0.5 g of the metal particles to be evaluated are added to 100 mL of a potassium hydroxide solution with a pH of 11, and then an aqueous nitric acid solution in an amount in which pH becomes 5 by adding 0.10 mol/L nitric acid to 100 mL of a potassium hydroxide solution and 10 mL of ethyl alcohol (blank solution) with a pH of 11 is added. | 2013-10-17 |
20130270489 | Inorganic Reaction System For Electroconductive Paste Composition - The invention provides an inorganic reaction system for the preparation of electroconductive paste. Particularly, an inorganic reaction system comprises conductive glass. The inorganic reaction system may comprise a silver containing matrix forming composition. The silver containing matrix composition may comprise at least one of silver oxide or silver halide, or both. The invention also provides solar cells manufactured utilizing an electroconductive paste comprising an inorganic reaction system comprising conductive glass, and methods of manufacturing solar cells utilizing an electroconductive paste comprising an inorganic reaction system comprising conductive glass. | 2013-10-17 |
20130270490 | STABLE DISPERSIONS OF MONOCRYSTALLINE NANOMETRIC SILVER PARTICLES - A concentrated dispersion of nanometric silver particles, and a method of producing the dispersion, the dispersion including a first solvent; a plurality of nanometric silver particles, in which a majority are single-crystal silver particles, the plurality of nanometric silver particles having an average secondary particle size (d | 2013-10-17 |
20130270491 | CONDUCTIVE HYDROGEL AND METHOD OF PREPARING THE SAME - A conductive hydrogel includes: a first monomer; a second monomer; a crosslinking agent; a photoinitiator; a wetting agent; an electrolyte; and deionized water, wherein the first monomer is a 3-sulfopropyl acrylate potassium salt, and the second monomer is acrylic acid. The conductive hydrogel has high adhesivity, conductivity and moisture-retaining capacity and low skin irritancy compared to conventional hydrogels because it has the optimum composition ratio. | 2013-10-17 |
20130270492 | METHOD FOR PREDICTING THE CONDUCTIVITY OF A LIQUID MIXTURE - In a method of preparing a liquid solution by mixing ingredients according to a predetermined recipe, wherein at least one pair of species of the liquid solution is derived from a weak electrolyte and corresponds to an acid-base pair, the conductivity of the liquid solution is predicted by:
| 2013-10-17 |
20130270493 | OPTICAL GLASS - An optical glass comprising, by mass %,
| 2013-10-17 |
20130270494 | MERCAPTOFUNCTIONAL HIGH MUBETA EO CHROMOPHORES AND HIGH TG, LOW OPTICAL LOSS, COVALENTLY BONDED, HIGH MUBETA EO CHROMOPHORE CONTAINING POLYMERS AND METHODS OF SYNTHESIZING EO MATERIALS - The present invention relates generally to mercaptofunctional high μβ EO chromophores and EO polymers, and particularly to mercaptofunctional high μβ EO chromophores and EO polymers useful for making electro-optical devices and systems. Mercaptofunctional high μβ EO chromophores are covalently bonded to poly(imido sulfide) polymers producing high Tg, low optical loss, covalently bonded, high μβ EO chromophore containing polymers. Methods of synthesizing these EO materials using mild polymerization conditions are also described. | 2013-10-17 |
20130270495 | NON-POWERED DEER HOIST - A hoist mechanism for raising an animal carcass off the ground includes a pair of strap assemblies. Each strap assembly includes a first ratchet portion attachable to a support member and a loop assembly for grasping a portion of the animal carcass. A handle is provided on each ratchet strap to raise a portion of the carcass off the ground. By alternately raising different portions of the carcass a given distance above ground level, the carcass can ultimately be raised to a position where it can be positioned on a support surface, for example to a rack that is provided on a vehicle. | 2013-10-17 |
20130270496 | Weed pulling tool - A weed pulling tool having a handle and an arcuate base connected to the handle, the base having a pair of font projecting tines, a floor between the times for scooping, and a rearward projecting arcuate claw, the front times each having a pointed tip and beveled inside edges that form a sharp edge for cutting through vegetation and the rearward claw being formed by a pair of rearward tines spaced apart for penetrating and scooping weeds, the rearward tines also having beveled interior side edges that form a sharp edge. | 2013-10-17 |
20130270497 | CHAIN RELEASE APPARATUSES AND METHODS - An apparatuses and methods to release a chain. Apparatuses and methods include an electronic, mechanical, or electro-mechanical actuator system used to rotate a hooking arm. The actuator system includes an extendable piston. In some embodiments, the actuator system is hydraulic. In other embodiments, the actuator system is pneumatic. | 2013-10-17 |
20130270498 | WINCH ASSEMBLY - A winch assembly is described and shown herein. The winch assembly may include a first housing member having a first retaining member formed therein and a second housing member having a second retaining member formed therein, the second housing member secured to the first housing member forming a winch housing. The winch assembly may further include a drive system generally positioned within the winch housing, and a winch drum operatively coupled with the drive system and rotationally secured with the first and second retaining members. | 2013-10-17 |
20130270499 | PULLING DEVICE AND METHOD THEREFOR - A puller is provided with a number of advantages. Pullers are described that have a high power to weight ratio, and a high power to volume ratio. Examples of pullers and pulling systems include configurations that provide high cable friction in a small device volume. Examples of pullers and pulling systems also include constant force pulling which is desirable in particular for small diameter pipe replacement. Using pullers and pulling systems as described, minimally invasive pipe replacement operations are possible. Reversible pullers are also provided that decrease the amount of time needed to burst or split multiple segments of pipe. | 2013-10-17 |
20130270500 | Safety Trailer - The present invention is directed to differing embodiments of safety trailers, which have first and second platforms and a safety wall positioned therebetween. The platforms and safety wall define an area protected from vehicular incursions. | 2013-10-17 |
20130270501 | RRAM DEVICE WITH AN EMBEDDED SELECTOR STRUCTURE AND METHODS OF MAKING SAME - One device disclosed herein includes first and second sidewall spacers positioned above a semiconducting substrate, wherein the first and second sidewall spacers are comprised of at least a conductive material, a conductive word line electrode positioned between the first and second sidewall spacers and first and second regions of variable resistance material positioned between the conductive word line electrode and the conductive material of the first and second sidewall spacers, respectively. This example also includes a base region of a bipolar transistor in the substrate below the word line electrode, an emitter region formed below the base region and first and second collector regions formed in the substrate within the base region, wherein the first collector region is positioned at least partially under the first region of variable resistance material and the second collector region is positioned at least partially under the second region of variable resistance material. | 2013-10-17 |
20130270502 | Semiconductor Phase Change Memory Using Face Center Cubic Crystalline Phase Change Material - In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. In one embodiment, a face centered cubic chalcogenide structure may be utilized. | 2013-10-17 |
20130270503 | MULTI-LAYER PHASE CHANGE MATERIAL - A multi-layer phase change material, including: a multi-layer film structure. The multi-layer film structure includes a plurality of periodic units. The periodic units each includes a first single-layer film phase change material and a second single-layer film phase change material. The first single-layer film phase change material and the second single-layer film phase change material are alternately stacked. The first single-layer film phase change material includes chemical components that are different from chemical components included in the second single-layer film phase change material, or the first single-layer film phase change material includes chemical components that are the same as chemical components included in the second single-layer film phase change material and a percent composition of the chemical components included in the first single-layer film phase change material is different from a percent composition of the chemical components included in the second single-layer film phase change material. | 2013-10-17 |
20130270504 | Memory Cells and Methods of Forming Memory Cells - Some embodiments include methods of forming memory cells. Programmable material may be formed directly adjacent another material. A dopant implant may be utilized to improve adherence of the programmable material to the other material by inducing bonding of the programmable material to the other material, and/or by scattering the programmable material and the other material across an interface between them. The memory cells may include first electrode material, first ovonic material, second electrode material, second ovonic material and third electrode material. The various electrode materials and ovonic materials may join to one another at boundary bands having ovonic materials embedded in electrode materials and vice versa; and having damage-producing implant species embedded therein. Some embodiments include ovonic material joining dielectric material along a boundary band, with the boundary band having ovonic material embedded in dielectric material and vice versa. | 2013-10-17 |
20130270505 | MICROELECTRONIC DEVICE WITH PROGRAMMABLE MEMORY, INCLUDING A LAYER OF DOPED CHALCOGENIDE THAT WITHSTANDS HIGH TEMPERATURES - A microelectronic device with programmable memory ( | 2013-10-17 |
20130270506 | NON-VOLATILE SEMICONDUCTOR MEMORY - A non-volatile semiconductor memory includes a word line extending in a first direction, a first electrode connected to the word line electrically, an ion diffusion layer with connected to the first electrode electrically, a second electrode connected to the ion diffusion layer electrically and formed of a metal to be diffused into the ion diffusion layer when a positive voltage is supplied thereto, and a bit line extending in a second direction perpendicular to the first direction, the bit line connected to the second electrode electrically. The ion diffusion layer has a first region disposed on the first electrode and a second region disposed between the first region and the second electrode, and the metal is more difficult to diffuse into the second region than into the first region. | 2013-10-17 |
20130270507 | VARIABLE RESISTANCE MEMORY DEVICES AND METHOD OF FORMING THE SAME - A variable resistance memory device includes a lower electrode on a substrate, a variable resistance pattern on the lower electrode, and an upper electrode on the variable resistance pattern. The upper electrode is in contact with at least a sidewall of the variable resistance pattern. | 2013-10-17 |
20130270508 | Non-Volatile Memory Device and Method of Forming the Same - According to embodiments of the present invention, a non-volatile memory device is provided. The non-volatile memory device includes a nanowire transistor including a nanowire channel, and a resistive memory cell arranged adjacent to the nanowire transistor and in alignment with a longitudinal axis of the nanowire channel. According to further embodiments of the present invention, a method of forming a non-volatile memory device is also provided. | 2013-10-17 |
20130270509 | RESISTANCE CHANGE MEMORY DEVICE HAVING THRESHOLD SWITCHING AND MEMORY SWITCHING CHARACTERISTICS, METHOD OF FABRICATING THE SAME, AND RESISTANCE CHANGE MEMORY DEVICE INCLUDING THE SAME - Disclosed are a resistance change memory device, a method of fabricating the same, and a resistance change memory array including the same. The resistance change memory device includes a first electrode and a second electrode. A hybrid switching layer is interposed between the first electrode and the second electrode. The hybrid switching layer is a metal oxide layer having both threshold switching characteristics and memory switching characteristics. | 2013-10-17 |
20130270510 | NONVOLATILE SEMICONDUCTOR MEMORY ELEMENT, NONVOLATILE SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR MANUFACTURING NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - A nonvolatile semiconductor memory element includes: a variable resistance element including a first electrode, a variable resistance layer, and a second electrode, and having a resistance value which changes according to a polarity of an electric pulse applied between the first electrode and the second electrode; and a current steering element which is electrically connected to the variable resistance element, allows a current to flow bidirectionally, and has a nonlinear current-voltage characteristic. The current steering element (i) has a structure in which a first current steering element electrode, a first semiconductor layer, and a second current steering element electrode are stacked in this order, and (ii) includes a second semiconductor layer which covers side surfaces of the first current steering element electrode, the first semiconductor layer, and the second current steering element electrode. | 2013-10-17 |
20130270511 | GRAPHENE PRESSURE SENSORS - Semiconductor nano pressure sensor devices having graphene membrane suspended over cavities formed in a semiconductor substrate. A suspended graphene membrane serves as an active electro-mechanical membrane for sensing pressure, which can be made very thin, from about one atomic layer to about 10 atomic layers in thickness, to improve the sensitivity and reliability of a semiconductor pressure sensor device. | 2013-10-17 |
20130270512 | CMOS IMPLEMENTATION OF GERMANIUM AND III-V NANOWIRES AND NANORIBBONS IN GATE-ALL-AROUND ARCHITECTURE - Architectures and techniques for co-integration of heterogeneous materials, such as group III-V semiconductor materials and group IV semiconductors (e.g., Ge) on a same substrate (e.g. silicon). In embodiments, multi-layer heterogeneous semiconductor material stacks having alternating nanowire and sacrificial layers are employed to release nanowires and permit formation of a coaxial gate structure that completely surrounds a channel region of the nanowire transistor. In embodiments, individual PMOS and NMOS channel semiconductor materials are co-integrated with a starting substrate having a blanket layers of alternating Ge/III-V layers. In embodiments, vertical integration of a plurality of stacked nanowires within an individual PMOS and individual NMOS device enable significant drive current for a given layout area. | 2013-10-17 |
20130270513 | ELECTROPOSITIVE METAL CONTAINING LAYERS FOR SEMICONDUCTOR APPLICATIONS - Embodiments of the present invention provide methods for forming layers that comprise electropositive metals through ALD (atomic layer deposition) and or CVD (chemical vapor deposition) processes, layers comprising one or more electropositive metals, and semiconductor devices comprising layers comprising one or more electropositive metals. In embodiments of the invention, the layers are thin or ultrathin (films that are less than 100 {acute over (Å)} thick) and or conformal films. Additionally provided are transistor devices, metal interconnects, and computing devices comprising metal layers comprising one or more electropositive metals. | 2013-10-17 |
20130270514 | LOW RESISTANCE BIDIRECTIONAL JUNCTIONS IN WIDE BANDGAP SEMICONDUCTOR MATERIALS - A light emitting diode device includes a first diode structure, a second diode structure on the first diode structure, and a conductive junction between the first diode structure and the second diode structure. The conductive junction includes a transparent conductive layer between the first diode structure and the second diode structure. Low resistance heterojunction tunnel junction structures including delta-doped layers are also disclosed. | 2013-10-17 |
20130270515 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, an n-type semiconductor layer, a p-type semiconductor layer, an active layer, a first electrode, and a second electrode. The n-type semiconductor layer is located between the substrate and the p-type semiconductor layer. The active layer is located between the n-type semiconductor layer and the p-type semiconductor layer. The wavelength of light emitted by the active layer is λ, and 222 nm≦λ≦405 nm. The active layer includes i quantum barrier layers and (i−1) quantum wells, each quantum well is located between any two quantum barrier layers, and i is an integer greater than or equal to 2. The thickness of each of the quantum barrier layers counting from the p-type semiconductor layer is T | 2013-10-17 |
20130270516 | Polarized White Light Devices Using Non-Polar or Semipolar Gallium Containing Materials and Transparent Phosphors - A light emitting device includes a substrate having a surface region and a light emitting diode overlying the surface region. The light emitting diode is fabricated on a semipolar or nonpolar GaN containing substrate and emits electromagnetic radiation of a first wavelength. The diode includes a quantum well region characterized by an electron wave function and a hole wave function. The electron wave function and the hole wave function are substantially overlapped within a predetermined spatial region of the quantum well region. The device has a transparent phosphor overlying the light emitting diode. The phosphor is excited by the substantially polarized emission to emit electromagnetic radiation of a second wavelength. | 2013-10-17 |
20130270517 | SUPER LATTICE STRUCTURE, SEMICONDUCTOR DEVICE AND SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING SUPER LATTICE STRUCTURE, AND METHOD OF MAKING SUPER LATTICE STRUCTURE - A superlattice structure includes a plurality of quantum-dot nanowires extending in a substantially vertical direction from a plane region. The quantum-dot nanowires have a structure of barrier layers and quantum-dot layers alternately stacked on the plane region, and the quantum-dot nanowires are substantially the same in diameter in a stacking direction and substantially uniformly arranged at an area density of 4 nanowires/μm | 2013-10-17 |
20130270518 | SYSTEM FOR FREQUENCY CONVERSION, SEMICONDUCTING DEVICE AND METHOD FOR OPERATING AND MANUFACTURING THE SAME - The document describes an edge-emitting semiconductor component comprising a semiconductor substrate layer and semiconductor layers that are epitaxially grown onto the semiconductor substrate layer. The semiconductor include an active zone and a waveguide layer. The semiconductor component according to the invention is characterized in that the active zone is designed to absorb pumped optical radiation of a first wavelength by multi-photon absorption and to generate an optical radiation of a second wavelength that is shorter than the first wavelength. | 2013-10-17 |
20130270519 | Non-Uniform Multiple Quantum Well Structure - A light emitting heterostructure including one or more fine structure regions is provided. The light emitting heterostructure can include a plurality of barriers alternating with a plurality of quantum wells. One or more of the barriers and/or quantum wells includes a fine structure region. The fine structure region includes a plurality of subscale features arranged in at least one of: a growth or a lateral direction. | 2013-10-17 |
20130270520 | LIGHT-EMITTING DEVICE - The present invention provides a light-emitting device manufactured with use of a compound semiconductor substrate comprising at least: a p-type cladding layer; a multiple-active layer portion in which three or more active layers made of (Al | 2013-10-17 |
20130270521 | GRAPHENE TRANSISTOR GATED BY CHARGES THROUGH A NANOPORE FOR BIO-MOLECULAR SENSING AND DNA SEQUENCING - A technique for a nanodevice is provided. A reservoir is separated into two parts by a membrane. A nanopore is formed through the membrane, and the nanopore connects the two parts of the reservoir. The nanopore and the two parts of the reservoir are filled with ionic buffer. The membrane includes a graphene layer and insulating layers. The graphene layer is wired to first and second metal pads to form a graphene transistor in which transistor current flowing through the graphene transistor is modulated by charges passing through the nanopore. | 2013-10-17 |
20130270522 | RESONANCE TUNNELING DEVICES AND METHODS OF MANUFACTURING THE SAME - Provided are a resonance tunneling device and a method of manufacturing the resonance tunneling device. The resonance tunneling device includes a substrate, a plurality of electrodes disposed on the substrate, and a nanoparticle layer disposed between the electrodes, and doped with an impurity. The nanoparticle layer uses the impurity to exhibit resonance tunneling where a current peak occurs at a target bias voltage applied between the electrodes. | 2013-10-17 |
20130270523 | Free Layer with High Thermal Stability for Magnetic Device Applications by Insertion of a Boron Dusting Layer - A boron or boron containing dusting layer such as CoB or FeB is formed along one or both of top and bottom surfaces of a free layer at interfaces with a tunnel barrier layer and capping layer to improve thermal stability while maintaining other magnetic properties of a MTJ stack. Each dusting layer has a thickness from 0.2 to 20 Angstroms and may be used as deposited, or at temperatures up to 400° C. or higher, or following a subsequent anneal at 400° C. or higher. The free layer may be a single layer of CoFe, Co, CoFeB or CoFeNiB, or may include a non-magnetic insertion layer. The resulting MTJ is suitable for STT-MRAM memory elements or spintronic devices. Perpendicular magnetic anisotropy is maintained in the free layer at temperatures up to 400° C. or higher. Ku enhancement is achieved and the retention time of a memory cell for STT-MRAM designs is increased. | 2013-10-17 |
20130270524 | COMPOUND FOR ORGANIC LIGHT-EMITTING DIODE AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - A compound represented by Formula 1 below may be used in an organic light emitting diode. | 2013-10-17 |
20130270525 | THIN FILM TRANSISTOR - A thin film transistor includes a gate insulating layer covering a gate electrode, a semiconductor layer in contact with the gate insulating layer, and impurity semiconductor layers which are in contact with part of the semiconductor layer and which form a source region and a drain region. The semiconductor layer includes a microcrystalline semiconductor layer formed on the gate insulating layer and a microcrystalline semiconductor region containing nitrogen in contact with the microcrystalline semiconductor layer. The thin film transistor in which off-current is small and on-current is large can be manufactured with high productivity. | 2013-10-17 |
20130270526 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY APPARATUS - An organic light-emitting display apparatus includes a substrate, a plurality of organic light-emitting diodes on the substrate, and a plurality of capacitors located next to at least one side of one of the organic light-emitting diodes. The capacitors are arranged inside trenches within the substrate. | 2013-10-17 |
20130270527 | BACKPLANE FOR FLAT PANEL DISPLAY APPARATUS, METHOD OF MANUFACTURING THE BACKPLANE, AND ORGANIC LIGHT EMITTING DISPLAY APPARATUS INCLUDING THE BACKPLANE - A backplane for a flat panel display apparatus, includes: a thin film transistor (TFT) on a substrate and including an active layer, a gate electrode, a source electrode, and a drain electrode; a light-blocking layer between the substrate and the TFT; a first insulating layer between the light-blocking layer and the TFT; a capacitor including a first electrode on the same plane as the light-blocking layer, and a second electrode on the first electrode, wherein the first insulating layer is between the first electrode and the second electrode; and a pixel electrode on the same plane as the light-blocking layer. | 2013-10-17 |
20130270528 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND REWORKING METHOD THEREOF - An organic light emitting display device is disclosed. The organic light emitting display device includes: an organic light emitting display panel defined into a display area for displaying an image and a non-display area surrounding the display area; a chip-on-film loaded with a driver IC chip, which is configured to drive the organic light emitting display panel, and attached to a pad portion which is formed on the non-display area of the organic light emitting display panel; and a printed circuit board configured to apply signals to the driver IC chip and attached to one edge of the chip-on-film, wherein the organic light emitting display panel includes a dummy pad portion which is formed on the non-display area in the same configuration as the pad portion and in opposition to the pad portion. | 2013-10-17 |
20130270529 | ORGANIC ELECTROLUMINESCENT ELEMENT MATERIAL, ORGANIC ELECTROLUMINESCENT ELEMENT AND PRODUCTION METHOD FOR ORGANIC ELECTROLUMINESCENT ELEMENT - Provided is an organic electroluminescence device material, which, in its production, is free from formation of impurities that worsen the performance of organic EL devices, which, in forming an upper layer by coating, does not cause dissolution mixing or swelling mixing, which forms a film of good quality and which contributes toward improving the performance (high durability, and low driving voltage) of organic EL devices. | 2013-10-17 |
20130270530 | ORGANIC ELECTROLUMINESCENT ELEMENT AND COMPOUND - An organic electroluminescence device having high efficiency, low in driving voltage and excellent in durability and a compound useful for the organic electroluminescence device are provided. | 2013-10-17 |
20130270531 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - A light-emitting layer, which is a stack of a first light-emitting layer and a second light-emitting layer, is provided between an anode and a cathode. The first light-emitting layer is formed on the anode side and contains a first light-emitting substance converting triplet excitation energy into light emission, a first organic compound having an electron-transport property, and a second organic compound having a hole-transport property. The second light-emitting layer contains a second light-emitting substance converting triplet excitation energy into light emission, the first organic compound, and a third organic compound having a hole-transport property. The second organic compound has a lower HOMO level than the third organic compound. The first light-emitting substance emits light with a wavelength shorter than that of light emitted from the second light-emitting substance. The first and the second organic compounds form an exciplex. The first and the third organic compounds form an exciplex. | 2013-10-17 |
20130270532 | LIGHT EMITTING TRANSISTOR - A static induction light emitting transistor comprising: on a substrate: a source electrode; a hole transporting layer in which a slit-shaped gate electrode is embedded; an equipotential layer; light emitting layer; and a transparent or semitransparent drain electrode, provided in this order. In this light emitting transistor, the drain electrode provided on the opposite side of the gate electrode, viewing from the light emitting layer, is transparent or semitransparent. | 2013-10-17 |
20130270533 | ORGANIC FIELD-EFFECT TRANSISTOR DEVICE - The invention relates to a organic field effect transistor device comprising: an organic semiconductor layer; a source electrode arranged in electronic contact with the said organic semiconductor; a drain electrode arranged in electronic contact with the said organic semiconductor; a gate electrode; an electrolyte layer arranged between said gate electrode and said organic semiconductor layer; wherein the organic semiconductor layer comprises a semiconducting polymeric material comprising one or more blocks of conjugated polymer combined with one or more blocks of copolymer; preferably an amphiphilic copolymer. Also a method of producing the device, and a polyanionic polymer is provided by the invention. | 2013-10-17 |
20130270534 | FIELD-EFFECT TRANSISTOR AND MANUFACTURING PROCESS THEREOF - A field-effect transistor includes a gate, a source and a drain; a semiconductor layer between the source and the drain; and a gate insulator between the gate and the semiconductor layer. The gate insulator comprises a first layer adjoining the semiconductor layer; and a second layer. The first layer is formed from an amorphous fluoropolymer having a first dielectric constant and a first thickness. The second layer has a second dielectric constant and a second thickness. The first dielectric constant is smaller than 3, the first thickness is smaller than 200 nm, the second dielectric constant is higher than 5, and the second thickness is smaller than 500 nm. | 2013-10-17 |
20130270535 | POLYMER AND ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device comprises an anode, a cathode, a light-emitting layer between the anode and the cathode and a hole transporting layer between the anode and the light-emitting layer. The hole transporting layer comprises a hole-transporting material having a triplet energy level, and a triplet-quenching unit having a triplet energy level that is lower than the triplet energy level of the hole-transporting material. The triplet quenching unit is selected from the group consisting of polyaromatic hydrocarbons such as 2,6-anthracenes, 9,10-anthracenes and derivatives thereof; anthanthrenes and derivatives thereof; distyryl aryls and derivatives thereof such as distyrylbenzenes, distyrylbiphenyls, stilbenes, fulvenes, dibenzofulvenes, perylenes, linear polyenes (from 2 to 6 alkenes) and cyclic polyenes, each of which may optionally be substituted with one or more substituents. | 2013-10-17 |
20130270536 | ELECTRONIC COMPONENT AND METHOD FOR PRODUCING AN ELECTRONIC COMPONENT - In various exemplary embodiments, an electronic component comprises a first electrode; an organic functional layer structure on or above the first electrode; a second electrode on or above the organic functional layer structure; a dielectric layer on or above the second electrode; and a reflection layer structure on or above the dielectric layer. | 2013-10-17 |
20130270537 | PEDOT Dispersions In Organic Solvents - Described is a complex comprising a polythiophene and a sulphonated synthetic rubber. Also described is a process for producing complexes, the complexes obtained by this process, a composition, a layer structure, a process for producing the layer structure, the layer structure obtained by this process, electronic components, and the use of a composition | 2013-10-17 |
20130270538 | THIN FILM TRANSISTOR AND DISPLAY DEVICE HAVNG THE SAME - A thin film transistor, a method of manufacturing the same, and a display device including the same, the thin film transistor including a substrate; a polysilicon semiconductor layer on the substrate; and a metal pattern between the semiconductor layer and the substrate, the metal pattern being insulated from the semiconductor layer, wherein the polysilicon of the semiconductor layer includes a grain boundary parallel to a crystallization growing direction, and a surface roughness of the polysilicon semiconductor layer defined by a distance between a lowest peak and a highest peak in a surface thereof is less than about 15 nm. | 2013-10-17 |
20130270539 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescence device including at least an anode, an emitting layer, an electron-transporting region and a cathode in sequential order, wherein the emitting layer contains a host and a dopant which gives fluorescent emission of which the main peak wavelength is 550 nm or less; the affinity Ad of the dopant is equal to or larger than the affinity Ah of the host; the triplet energy E | 2013-10-17 |
20130270540 | MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENTS, AND ORGANIC ELECTROLUMINESCENT ELEMENT USING SAME - A material for organic electroluminescence device having a specific structure, in which an aromatic ring of a dibenzofuran skeleton, a carbazole skeleton, or a dibenzothiophene skeleton has a nitrogen atom as a heteroatom, and an organic electroluminescence device including an organic thin film layer which includes one or more layers between a cathode and an anode. The organic thin film layer includes a light emitting layer which includes a phosphorescent emitting material. At least one layer of the organic thin film layer includes the material for organic electroluminescence device. The organic EL device employing the material for organic EL device has a high external quantum efficiency even when driving the device at low voltage and also has a long lifetime. | 2013-10-17 |
20130270541 | IMIDAZOLE COMPOUND PRODUCTION METHOD, IMIDAZOLE COMPOUND, IMIDAZOLE-BASED COMPOUND, ORGANIC METAL COMPLEX, MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE, AND LIGHTING DEVICE - A manufacturing method of an imidazole compound represented by a formula (1) below includes reacting 1-arylimidazole with a halogen-atom substituted compound. For performing this reaction, in a reaction system, a mole number N | 2013-10-17 |
20130270542 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - A method for producing an optoelectronic component includes forming an organic functional layer structure on or above a first electrode layer, and forming a second electrode layer on or above the organic functional layer structure, wherein a local modification structure is formed in the first electrode layer or in the second electrode layer. | 2013-10-17 |
20130270543 | PERYLENE-BASED SEMICONDUCTORS AND METHODS OF PREPARATION AND USE THEREOF - Provided are semiconductors prepared from an enantiomerically enriched mixture of a nitrogen-functionalized rylene bis(dicarboximide) compound. Specifically, the enantiomerically enriched mixture has unexpected electron-transport efficiency compared to the racemate or either of the enantiomers in optically pure form. | 2013-10-17 |
20130270544 | COMPOSITION AND BLOCK TYPE COPOLYMER - A composition comprising:
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20130270545 | POLYMER COMPOUND HAVING CARBON CLUSTER STRUCTURE AND ORGANIC DEVICE USING SAME - A polymer compound, is provided in which at least a part of repeating units has a group containing a carbon cluster structure. The polymer compound preferably one or more, more preferably two or more, units selected from an arylene unit, a heteroarylene unit and an aromatic amine unit, as repeating units. | 2013-10-17 |
20130270546 | ACTIVE DEVICE AND FABRICATING METHOD THEREOF - An active device and a fabricating method thereof are provided. The active device includes a buffer layer, a channel, a gate, a gate insulation layer, a source and a drain. The buffer layer is disposed on a substrate and has a positioning region. A thickness of a portion of the buffer layer in the positioning region is greater than a thickness of a portion of the buffer layer outside the positioning region. The channel is disposed on the buffer layer and in the positioning region. The gate is disposed above the channel. The gate insulation layer is disposed between the channel and the gate. The source and the drain are disposed above the channel and electrically connected to the channel. | 2013-10-17 |
20130270547 | DISPLAY DEVICE, ARRAY SUBSTRATE, AND THIN FILM TRANSISTOR THEREOF - A thin film transistor is provided. In this thin film transistor, the thickness of the gate is increased. Therefore, the source and drain of this thin film transistor can be disposed on the side wall of the gate to decrease the occupied area of the thin film transistor. An array substrate and a display device using the thin film transistor are also provided. | 2013-10-17 |
20130270548 | SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND DISPLAY DEVICE - A TFT substrate ( | 2013-10-17 |
20130270549 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a semiconductor device including an oxide semiconductor, the amount of oxygen vacancies is reduced. Moreover, electrical characteristics of a semiconductor device including an oxide semiconductor are improved. The semiconductor device includes a transistor including a gate electrode over a substrate, a gate insulating film covering the gate electrode, an oxide semiconductor film overlapping with the gate electrode with the gate insulating film provided therebetween, and a pair of electrodes in contact with the oxide semiconductor film; and over the transistor, a first insulating film covering the gate insulating film, the oxide semiconductor film, and the pair of electrodes; and a second insulating film covering the first insulating film. An etching rate of the first insulating film is lower than or equal to 10 nm/min and lower than an etching rate of the second insulating film when etching is performed at 25° C. with 0.5 weight % of hydrofluoric acid. | 2013-10-17 |
20130270550 | SEMICONDUCTOR DEVICE - Electric characteristics of a semiconductor device using an oxide semiconductor are improved. Further, a highly reliable semiconductor device in which a variation in electric characteristics with time or a variation in electric characteristics due to a gate BT stress test with light irradiation is small is manufactured. A transistor includes a gate electrode, an oxide semiconductor film overlapping with part of the gate electrode with a gate insulating film therebetween, and a pair of electrodes in contact with the oxide semiconductor film. The gate insulating film is an insulating film whose film density is higher than or equal to 2.26 g/cm | 2013-10-17 |
20130270551 | ISOLATOR CIRCUIT AND SEMICONDUCTOR DEVICE - An isolator circuit capable of two-way electrical disconnection and a semiconductor device including the isolator circuit are provided. A data holding portion is provided in an isolator circuit without the need for additional provision of a data holding portion outside the isolator circuit, and data which is to be input to a logic circuit that is in an off state at this moment is stored in the data holding portion. The data holding portion may be formed using a transistor with small off-state current and a buffer. The buffer can include an inverter circuit and a clocked inverter circuit. | 2013-10-17 |
20130270552 | SEMICONDUCTOR DEVICE - A transistor includes oxide semiconductor stacked layers between a first gate electrode layer and a second gate electrode layer through an insulating layer interposed between the first gate electrode layer and the oxide semiconductor stacked layers and an insulating layer interposed between the second gate electrode layer and the oxide semiconductor stacked layers. The thickness of a channel formation region is smaller than the other regions in the oxide semiconductor stacked layers. Further in this transistor, one of the gate electrode layers is provided as what is called a back gate for controlling the threshold voltage. Controlling the potential applied to the back gate enables control of the threshold voltage of the transistor, which makes it easy to maintain the normally-off characteristics of the transistor. | 2013-10-17 |
20130270553 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which generation of a parasitic channel in an end region of an oxide semiconductor film is suppressed. The semiconductor device includes a gate electrode, an oxide semiconductor film, a source electrode and a drain electrode, and a channel region formed in the oxide semiconductor film. The channel region is formed between a first side surface of the source electrode and a second side surface of the drain electrode opposite to the first side surface. The oxide semiconductor film has an end region which does not overlap with the gate electrode. The end region which does not overlap with the gate electrode is positioned between a first region that is the nearest to one end of the first side surface and a second region that is the nearest to one end of the second side surface. | 2013-10-17 |
20130270554 | SEMICONDUCTOR DEVICE - The semiconductor conductor device includes a gate electrode | 2013-10-17 |
20130270555 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to suppress conducting-mode failures of a transistor that uses an oxide semiconductor film and has a short channel length. A semiconductor device includes a gate electrode | 2013-10-17 |
20130270556 | ACTIVE DEVICE AND FABRICATING METHOD THEREOF - An active device and a fabricating method thereof are provided. The active device includes a buffer layer, a channel, a gate, a gate insulation layer, a source and a drain. The buffer layer is disposed on a substrate and has a positioning region. A thickness of a portion of the buffer layer in the positioning region is greater than a thickness of a portion of the buffer layer outside the positioning region. The channel is disposed on the buffer layer and in the positioning region. The gate is disposed above the channel. The gate insulation layer is disposed between the channel and the gate. The source and the drain are disposed above the channel and electrically connected to the channel. | 2013-10-17 |
20130270557 | TEST STRUCTURE FOR SEMICONDUCTOR PROCESS AND METHOD FOR MONITORING SEMICONDUCTOR PROCESS - A monitoring method of a semiconductor process includes the following steps. A semiconductor substrate is provided, and a test structure is formed thereon. The method of forming the test structure includes the following steps. A first doped region and a second doped region are formed in the semiconductor substrate, and an insulating layer is formed on the semiconductor substrate. Subsequently, a conductive layer is directly formed on the insulating layer to complete the formation of the test structure, in which the conductive layer in a floating state partially overlaps the first doped region and partially overlaps the second doped region. Then, a voltage signal is applied to the test structure and the breakdown voltage (Vbd) between the first doped region and the second doped region is measured. | 2013-10-17 |
20130270558 | SEMICONDUCTOR TEST AND MONITORING STRUCTURE TO DETECT BOUNDARIES OF SAFE EFFECTIVE MODULUS - A method of testing an integrated circuit (IC) chip and a related test structure are disclosed. A test structure includes a monitor chain proximate to at least one solder bump pad, the monitor chain including at least one metal via stack, each metal via stack extending from a lower metal layer in the IC chip to an upper metal layer in the IC chip, such that the monitor chain forms a continuous circuit proximate to the at least one solder bump pad, and where each metal via stack is positioned substantially under the solder bump. A method for testing to detect boundaries of safe effective modulus includes performing a stress test on an IC chip containing the test structure joined to a semiconductor package. | 2013-10-17 |
20130270559 | ANTIFUSE ELEMENT UTILIZING NON-PLANAR TOPOLOGY - Techniques for providing non-volatile antifuse memory elements and other antifuse links are disclosed herein. In sonic embodiments, the antifuse memory elements are configured with non-planar topology such as FinFET topology. In some such embodiments, the fin topology can be manipulated and used to effectively promote lower breakdown voltage transistors, by creating enhanced-emission sites which are suitable for use in lower voltage non-volatile antifuse memory elements. In one example embodiment, a semiconductor antifuse device is provided that includes a non-planar diffusion area having a fin configured with a tapered portion, a dielectric isolation layer on the fin including the tapered portion, and a gate material on the dielectric isolation layer. The tapered portion of the fin may be formed, for instance, by oxidation, etching, and/or ablation, and in some cases includes a base region and a thinned region, and the thinned region is at least 50% thinner than the base region. | 2013-10-17 |
20130270560 | METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH EPITAXY SOURCE AND DRAIN REGIONS INDEPENDENT OF PATTERNING AND LOADING - A method of fabricating a semiconductor device that includes providing a gate structure on a channel portion of a semiconductor on insulator (SOI) layer of a semiconductor on insulator (SOI) substrate, and forming an amorphous semiconductor layer on at least a source region portion and a drain region portion of the SOI layer. The amorphous semiconductor layer is converted to a crystalline semiconductor material, wherein the crystalline semiconductor material provides a raised source region and a raised drain region of the semiconductor device. The method may be applicable to planar semiconductor devices and finFET semiconductor devices. | 2013-10-17 |
20130270561 | METHOD FOR FORMING SEMICONDUCTOR DEVICE WITH EPITAXY SOURCE AND DRAIN REGIONS INDEPENDENT OF PATTERNING AND LOADING - A method of fabricating a semiconductor device that includes providing a gate structure on a channel portion of a semiconductor on insulator (SOI) layer of a semiconductor on insulator (SOI) substrate, and forming an amorphous semiconductor layer on at least a source region portion and a drain region portion of the SOI layer. The amorphous semiconductor layer is converted to a crystalline semiconductor material, wherein the crystalline semiconductor material provides a raised source region and a raised drain region of the semiconductor device. The method may be applicable to planar semiconductor devices and finFET semiconductor devices. | 2013-10-17 |
20130270562 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device is provided in which ESD is less likely to occur in a manufacturing process thereof. In manufacture of a semiconductor device including a long lead wiring A, during steps with direct exposure to a plasma atmosphere, a plurality of island-shaped wirings is formed for the wiring A and then electrically connected to one another in series. Specifically, a plurality of island-shaped wirings is formed, covered with an insulating layer, and electrically connected to one another in series by a wiring formed over the insulating layer. The island-shaped wiring and the wiring formed over the insulating layer are electrically connected to each other through an opening formed in the insulating layer. | 2013-10-17 |
20130270563 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a transistor in which an oxide semiconductor is used for a channel formation region and which has a positive threshold voltage to serve as a normally-off switching element, and the like are provided. Stable electrical characteristics are given to the semiconductor device including the transistor in which an oxide semiconductor film is used for the channel formation region, and thus the semiconductor device has high reliability. In a semiconductor device including a transistor in which an oxide semiconductor film including a channel formation region, source and drain electrode layers, a gate insulating film, and a gate electrode layer are stacked in this order over an oxide insulating film, a conductive layer overlapping with the gate electrode layer with the channel formation region provided therebetween and controlling the electrical characteristics of the transistor is provided in the oxide insulating film including an oxygen excess region. | 2013-10-17 |
20130270564 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - In a transistor including an oxide semiconductor film, a metal oxide film which has a function of preventing 1 electrification and covers a source electrode and a drain electrode is formed in contact with the oxide semiconductor film, and then, heat treatment is performed. Through the heat treatment, impurities such as hydrogen, moisture, a hydroxyl group, or hydride are intentionally removed from the oxide semiconductor film, whereby the oxide semiconductor film is highly purified. By providing the metal oxide film, generation of a parasitic channel on the back channel side of the oxide semiconductor film in the transistor is prevented. | 2013-10-17 |
20130270565 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel is provided and includes a gate line, a gate insulating layer covering the gate line, a semiconductor layer disposed on the gate insulating layer, and a data line and a drain electrode disposed on the semiconductor layer. The data line and the drain electrode have a dual-layered structure including a lower layer and an upper layer with the lower layer having a first portion protruded outside the upper layer and the semiconductor layer having a second portion protruded outside the edge of the lower layer. | 2013-10-17 |
20130270566 | THIN FILM TRANSISTOR AND DISPLAY DEVICE - A thin film transistor is provided that includes a gate electrode, a source electrode, and a drain electrode, an oxide semiconductor active layer formed over the gate electrode, a fixed charge storage layer formed over a portion of the oxide semiconductor active layer, and a fixed charge control electrode formed over the fixed charged storage layer. | 2013-10-17 |
20130270567 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THIN FILM TRANSISTOR AND PIXEL STRUCTURE - A method of fabricating a TFT includes providing a substrate where a gate, an insulating layer, and a channel layer are formed. A conductive layer is formed on the substrate to cover the channel layer and the insulating layer. A photoresist layer is formed on the conductive layer. A photo mask is placed above the photoresist layer and has a data line pattern, a source pattern, and a drain pattern. A first width (W | 2013-10-17 |
20130270568 | THIN FILM TRANSISTOR - Disclosed herein are thin film transistors (TFTs) and techniques for fabricating TFTs. A major plane of the gate electrode of the TFT may be vertically oriented with respect to a horizontal layer of polysilicon in which the TFT resides. An interface between the gate electrode and gate dielectric may be vertically oriented with respect to a horizontal layer of polysilicon in which the TFT resides. The TFT may have a channel width that is defined by a thickness of the horizontal layer of polysilicon. The TFT may be formed by etching a hole in a layer of polysilicon. Then, a gate electrode and gate dielectric may be formed in the hole by depositing layers of dielectric and conductor material on the sidewall. The body may be formed in the horizontal layer of polysilicon outside the hole. | 2013-10-17 |
20130270569 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device and a method of fabricating the same include a semiconductor substrate, a high-k dielectric pattern and a metal-containing pattern sequentially being stacked on the semiconductor substrate, a gate pattern including poly semiconductor and disposed on the metal-containing pattern, and a protective layer disposed on the gate pattern, wherein the protective layer includes oxide, nitride and/or oxynitride of the poly semiconductor. | 2013-10-17 |
20130270570 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR - The object of the present invention is to form a low-concentration impurity region with good accuracy in a top gate type TFT. Phosphorus is added to a semiconductor layer by using a pattern made of a conductive film as a mask to form an N-type impurity region in a self-alignment manner. A positive photoresist is applied to a substrate so as to cover the pattern and then is exposed to light applied to the back of the substrate and then is developed, whereby a photoresist | 2013-10-17 |
20130270571 | SCHOTTKY BARRIER DIODE AND MANUFACTURING METHOD THEREOF - The present invention discloses a Schottky barrier diode (SBD) and a manufacturing method thereof. The SBD is formed on a substrate. The SBD includes: a gallium nitride (GaN) layer; an aluminum gallium nitride (AlGaN), formed on the GaN layer; a high work function conductive layer, formed on the AlGaN layer, wherein a first Schottky contact is formed between the high work function conductive layer and the AlGaN layer; a low work function conductive layer, formed on the AlGaN layer, wherein a second Schottky contact is formed between the low work function conductive layer and the AlGaN layer; and an ohmic contact metal layer, formed on the AlGaN layer, wherein an ohmic contact is formed between the ohmic contact metal layer and the AlGaN layer, and wherein the ohmic contact conductive layer is separated from the high and low work function conductive layers by a dielectric layer. | 2013-10-17 |
20130270572 | GROUP III-N HFET WITH A GRADED BARRIER LAYER - A device and a method of making said wherein the device wherein the device has a group III-nitride buffer deposited on a substrate; and a group III-nitride heterostructure disposed on a surface of the group III-nitride buffer, wherein the group III-nitride heterostructure has a group III-nitride channel and a group III-nitride barrier layer disposed on a surface of the group III-nitride channel, the group III-nitride barrier layer including Al as one of its constituent group III elements, the Al having a mole fraction which varies at least throughout a portion of said group III-nitride barrier layer. | 2013-10-17 |
20130270573 | LEDs with Efficient Electrode Structures - Aspects include Light Emitting Diodes that have a GaN-based light emitting region and a metallic electrode. The metallic electrode can be physically separated from the GaN-based light emitted region by a layer of porous dielectric, which provides a reflecting region between at least a portion of the metallic electrode and the GaN-based light emitting region. | 2013-10-17 |
20130270574 | NITRIDE-BASED SEMICONDUCTOR ELEMENT AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor element according to an embodiment of the present disclosure includes: a p-type contact layer, of which the growing plane is an m plane; and an electrode which is arranged on the growing plane of the p-type contact layer. The p-type contact layer is a GaN-based semiconductor layer which has a thickness of 26 nm to 60 nm and which includes oxygen at a concentration that is equal to or higher than Mg concentration of the p-type contact layer. In the p-type contact layer, the number of Ga vacancies is larger than the number of N vacancies. | 2013-10-17 |
20130270575 | SEMICONDUCTOR WAFER COMPRISING GALLIUM NITRIDE LAYER HAVING ONE OR MORE SILICON NITRIDE INTERLAYER THEREIN - A semiconductor wafer comprising a substrate layer and a first GaN layer having one or more SiNx interlayers therein, wherein in the first GaN layer at least one SiNx interlayer has GaN penetrated through one or more portions of said SiNx interlayer and preferably has a thickness of from 0.5 to 10 nm. | 2013-10-17 |
20130270576 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device has a planar layout configured by periodically arranging unit cells. The unit cells include valid cells and invalid cells. Each of the valid cells has a switchable channel surface. The invalid cells are to relax electric field in the valid cells. At least one of the valid cells is disposed between adjacent ones of the invalid cells. | 2013-10-17 |
20130270577 | GRID-UMOSFET WITH ELECTRIC FIELD SHIELDING OF GATE OXIDE - A trench metal oxide semiconductor field effect transistor or UMOSFET, includes a buried region that extends beneath the trench and beyond a corner of the trench. The buried region is tied to a source potential of the UMOSFET, and splits the potential realized across the structure. This effectively shields the electric field from the corners of the trench to reduce gate oxide stress, and resultantly improves device performance and reliability. | 2013-10-17 |