42nd week of 2014 patent applcation highlights part 14 |
Patent application number | Title | Published |
20140306180 | ELECTRONIC DEVICE, SOLID STATE IMAGING APPARATUS, AND METHOD OF PRODUCING ELECTRODE FOR ELECTRONIC DEVICE - There are provided an electronic device including a first electrode, a second electrode and a photoelectric conversion layer sandwiched between the first electrode and the second electrode, the first electrode including an amorphous oxide composed of at least a quaternary compound of indium, gallium and/or aluminum, zinc and oxygen, and a difference between a work function value of the second electrode and a work function value of the first electrode being 0.4 eV or more; and a method of producing an electrode for the electronic device. | 2014-10-16 |
20140306181 | NITRIDE SEMICONDUCTOR DEVICE AND FABRICATING METHOD THEREOF - This specification relates to an enhancement-type semiconductor device having a passivation layer formed using a photoelectrochemical (PEC) method, and a fabricating method thereof.
| 2014-10-16 |
20140306182 | SOLID-STATE IMAGING DEVICE, METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE, AND IMAGING APPARATUS - A solid-state imaging device includes a first electrode, a second electrode disposed opposing to the first electrode, and a photoelectric conversion layer, which is disposed between the first electrode and the second electrode and in which narrow gap semiconductor quantum dots are dispersed in a conductive layer, wherein one electrode of the first electrode and the second electrode is formed from a transparent electrode and the other electrode is formed from a metal electrode or a transparent electrode. | 2014-10-16 |
20140306183 | METHOD FOR MANUFACTURING FUNCTIONAL MATERIAL AND ELECTRONIC COMPONENT - A method for manufacturing a functional material including a porous metal complex with nanoparticles included therein, the method including a configuration of adding more than one particle constituent raw material constituting the nanoparticles and a porous metal complex to a solvent, and then synthesizing nanoparticles included in the porous metal complex by heating to a desired temperature. In addition, provided is an electronic component including an electronic component element using a functional material including a porous metal complex with nanoparticles included therein. | 2014-10-16 |
20140306184 | TWO-DIMENSIONAL MATERIAL CONTAINING ELECTRONIC COMPONENTS - In various embodiments, an electronic component is provided. The electronic component may include a dielectric structure; and a two-dimensional material containing structure over the dielectric structure. The dielectric structure is doped with dopants to change the electric characteristic of the two-dimensional material containing structure. | 2014-10-16 |
20140306185 | THIN FILM TRANSISTOR AND METHOD FOR MAKING THE SAME - A thin film transistor is provided. The thin film transistor includes a source electrode, a drain electrode, a semiconducting layer, an insulating layer and a gate electrode. The insulating layer has a first surface and a second surface opposite to the first surface. The gate electrode is located on the first surface of the insulating layer. The source electrode, the drain electrode, and the semiconductor layer are located on the second surface of the insulating layer. The gate electrode, the source electrode, and the drain electrode include a first carbon nanotube layer. The semiconductor layer includes a second carbon nanotube layer. A first film resistor of the first carbon nanotube layer is smaller than or equal to 10 kΩ per square. A second film resistor of the second carbon nanotube layer is greater than or equal to 100 kΩ per square. | 2014-10-16 |
20140306186 | HETEROARYL-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - In an aspect, an organic compound and an organic light-emitting diode (OLED) including the same are provided. | 2014-10-16 |
20140306187 | ADHESIVE HAVING ADHESIVE CAPSULE AND ORGANIC LIGHT EMITTING DISPLAY DEVICE COMPRISING ADHESIVE LAYER FORMED BY THE ADHESIVE - An adhesive includes a polymer matrix, and a plurality of adhesive capsules in the polymer matrix, wherein each of the adhesive capsules includes a shell, configured to shatter under pressure, and an adhesive polymer in the shell. | 2014-10-16 |
20140306188 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF PREPARING THE SAME - An organic light-emitting display device is disclosed. The organic light-emitting display device may include a substrate, an organic light-emitting portion provided on the substrate, a first inorganic film that seals and covers the organic light-emitting portion, and a second inorganic film provided on the first inorganic film and including a low temperature viscosity transition (LVT) inorganic material. A coefficient of thermal expansion (CTE) of the first inorganic film may be smaller than a CTE of the second inorganic film. | 2014-10-16 |
20140306189 | DONOR SUBSTRATE, METHOD OF FABRICATING ORGANIC LIGHT-EMITTING DISPLAY DEVICE, AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE FABRICATED USING THE METHOD - A donor substrate includes a base layer having a first surface and a second surface, a complementary hardness layer on the first surface of the base layer, and a transfer layer on the complementary hardness layer. A hardness of the complementary hardness layer is greater than that of the base layer. | 2014-10-16 |
20140306190 | ORGANIC COMPOUND AND ORGANIC LIGHT EMITTING DIODE DEVICE INCLUDING THE SAME - Disclosed are a novel organic compound and an organic light emitting diode device using the same. More particularly, a novel organic compound having electrical stability, high charge transport capability, and light emitting performance, high glass transition temperature and being capable of preventing crystallization, and an organic light emitting diode device including an organic layer including the same are disclosed. | 2014-10-16 |
20140306191 | THIN FILM SEMICONDUCTOR DEVICE AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE - A thin film semiconductor device including a thin film transistor (TFT) that maintains a constant electrical characteristic and an organic light-emitting display device. The thin film semiconductor device includes: a substrate; and a thin film transistor (TFT) disposed on the substrate and comprising a semiconductor layer comprising a source region and a drain region, wherein a part of the source region is spaced apart from the drain region and partially surrounds the drain region, and wherein a part of the drain region is spaced apart from the source region and partially surrounds the source region. | 2014-10-16 |
20140306192 | DISPLAY APPARATUS HAVING SEALING PORTION AND FABRICATION METHOD THEREOF - A display apparatus includes a sealing portion. A method for fabricating the sealing portion includes: irradiating a pulse laser beam onto a deposition target to form the sealing portion at an edge where a substrate and an encapsulation face each, wherein a display unit is formed on the substrate, and the encapsulation is configured to seal the substrate; bonding the substrate and the encapsulation to each other; hardening the sealing portion; and monitoring the sealing portion. Thus, structural strength of the sealing portion is improved. | 2014-10-16 |
20140306193 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic light emitting display device includes a substrate, a display unit on the substrate, and an encapsulation layer on the display unit, the encapsulation layer including a plurality of alternating inorganic and organic films, at least one of the organic films being a patterned organic film, and the patterned organic film having a plurality of high refractive index portions in an organic matrix. | 2014-10-16 |
20140306194 | FLEXIBLE SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND ORGANIC LIGHT EMITTING DIODE DISPLAY - A flexible substrate, a method of manufacturing the same, and an organic light emitting diode display, the flexible substrate including a first flexible layer; a polysilicon layer on the first flexible layer, the polysilicon layer having a plurality of protrusions on a surface thereof; and a second flexible layer on the polysilicon layer. | 2014-10-16 |
20140306195 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND MANUFACTURING METHOD THEREOF - An organic light-emitting display apparatus and a manufacturing method thereof. The organic light-emitting display apparatus includes a substrate, a display unit arranged on the substrate, a dam unit arranged at a periphery of the display unit and on the substrate and an encapsulating layer to encapsulate the display unit, wherein the encapsulating layer includes an organic film covering the display unit, and an inorganic film covering the organic film and the dam unit, and wherein a hardness of the dam unit is lower than that of the inorganic film. According to this, lateral moisture-proof characteristics of the organic light-emitting display apparatus are improved. | 2014-10-16 |
20140306196 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display is disclosed In one aspect, the display includes a display panel, a grid layer positioned on the display panel, wherein the grid layer includes a plurality of protrusions formed of a first protrusion and a second protrusion formed on a surface of the first protrusion, and a window positioned on the grid layer. | 2014-10-16 |
20140306197 | COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE SAME - Provided are a compound of Formula 1 and an organic light-emitting device including the compound of Formula 1: | 2014-10-16 |
20140306198 | ORGANIC LUMINESCENCE DISPLAY AND METHOD OF MANUFACTURING THE SAME - Provided are organic luminescence display and method for manufacturing the same. According to an aspect of the present invention, there is provided an organic luminescence display comprising a substrate and a plurality of pixels disposed on the substrate. The pixels comprise a plurality of first pixels, each comprising a first organic light-emitting layer, and a plurality of second pixels which are smaller than the first pixels and each of which comprises a second organic light-emitting layer. The surface roughness of the second organic light-emitting layer is greater than the surface roughness of the first organic light-emitting layer. | 2014-10-16 |
20140306199 | CONCAVE-HEMISPHERE-PATTERNED ORGANIC TOP-LIGHT EMITTING DEVICE - A first device is provided. The first device includes an organic light emitting device, which further comprises a first electrode, a second electrode, and an organic emissive layer disposed between the first and second electrode. Preferably, the second electrode is more transparent than the first electrode. The organic emissive layer has a first portion shaped to form an indentation in the direction of the first electrode, and a second portion shaped to form a protrusion in the direction of the second electrode. The first device may include a plurality of organic light emitting devices. The indentation may have a shape that is formed from a partial sphere, a partial cylinder, a pyramid, or a pyramid with a mesa, among others. The protrusions may be formed between adjoining indentations or between an indentation and a surface parallel to the substrate. | 2014-10-16 |
20140306200 | DISPLAY UNIT AND ELECTRONIC APPARATUS - A display unit includes a pixel including a plurality of sub-pixels. The sub-pixels each include a plurality of light emission regions that are arranged away from one another. Each of the sub-pixels includes a single first electrode, a single second electrode provided in a lamination direction of the first electrode, and a light-emitting layer inserted between the first electrode and the second electrode in each of the light emission regions. | 2014-10-16 |
20140306201 | LIGHT-EMITTING MODULE, LIGHT-EMITTING PANEL, AND LIGHT-EMITTING DEVICE - One embodiment of the present invention relates to a light-emitting device comprising an insulating surface; a lower electrode over the insulating surface; a protrusion over the insulating surface having a sidewall sloping toward the lower electrode; a light-transmitting partition overlapping with an end portion of the lower electrode and the sidewall of the protrusion; and a light-emitting element including the lower electrode, an upper electrode overlapping with the lower electrode, and a layer containing a light-emitting organic compound between the lower electrode and the upper electrode. In the light-emitting device, the sidewall of the protrusion can reflect light emitted from the light-emitting element. As a result, the light-emitting device that has reduced power consumption is provided. | 2014-10-16 |
20140306202 | Organic Field Effect Transistor and Method for Production - The present disclosure relates to an organic field effect transistor, comprising a first electrode and a second electrode, the electrodes providing a source electrode and a drain electrode, a gate electrode, an electronically active region at least in part made of an organic material and providing a charge a carrier channel, and a gate electrode separation, comprising a doped organic semiconducting layer directly provided on the gate electrode, wherein the doped organic semiconducting layer comprises an organic matrix material and an organic dopant. Furthermore, a method for producing an organic field effect transistor is provided. | 2014-10-16 |
20140306203 | METAL COMPLEX AND LIGHT-EMITTING DEVICE COMPRISING THE METAL COMPLEX - A metal complex is provided represented by Formula (1): | 2014-10-16 |
20140306204 | Double-Sided Organic Light-Emitting Diode, and Manufacturing Method and Display Device Thereof - A double-sided organic light-emitting diode and manufacturing method thereof, and a display device using double-sided organic light-emitting diode pixel configuration are described. The double-sided organic light-emitting diode includes a first electrode, a first organic semiconductor layer; disposed on the first electrode, a shared electrode disposed on the first organic semiconductor layer and electrically connected to the output terminal of a thin film transistor; a second organic semiconductor layer disposed on the shared electrode; and a second electrode disposed on the second organic semiconductor. The first electrode, the shared electrode and the second electrode are electrically insulated from each other, and two organic light-emitting diodes in the double-sided organic light emitting diode can be independently controlled. | 2014-10-16 |
20140306205 | Charge-Transporting Material, Organic Electroluminescent Element, and Light-Emitting Device, Display Device and Illumination Device Characterised By Using Said Element - An organic electroluminescent element having high durability can be provided by using a compound represented by the following general formula (1), wherein: Z | 2014-10-16 |
20140306206 | Organic Electroluminescent Element, and Light Emitting Device, Display Device and Lighting Device Each Using Organic Electroluminescent Element - An organic electroluminescent element containing a light emitting material represented by the following general formula (1) and a host material represented by the general formula (H-1) in a light emitting layer. The organic electroluminescent element has low driving voltage, high luminous efficiency, and excellent durability. L represents O, NR | 2014-10-16 |
20140306207 | ORGANIC ELECTROLUMINESCENCE ELEMENT, AND MATERIAL FOR ORGANIC ELECTROLUMINESCENCE ELEMENT - The organic electroluminescence device includes an anode, a cathode, and at least an emitting layer between the anode and the cathode. The emitting layer includes a first host material, a second host material, and a phosphorescent dopant material. The first host material is a compound represented by a formula (1) below and the second host material is a compound represented by a formula (2) below. | 2014-10-16 |
20140306208 | MASKING FOR LIGHT EMITTING DEVICE PATTERNS - The present invention relates to a light emitting device with at least two active areas and a more robust method of manufacturing such a device, wherein a first electrode layer ( | 2014-10-16 |
20140306209 | ORGANIC EL DEVICE AND METHOD FOR PRODUCING THE SAME - An organic EL device and a method for forming the same, capable of obtaining a high light emission yield and improving long-term stability. The organic EL device is an organic EL device ( | 2014-10-16 |
20140306210 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - The present invention relates to an organic light emitting device and a method for preparing an organic light emitting device, and the organic light emitting device comprises a substrate, a first electrode, an organic material layer, and a second electrode in this order, and a spacer pattern on the first electrode. | 2014-10-16 |
20140306211 | ORGANIC ELECTROLUMINESCENT ELEMENT AND PLANAR LIGHT-EMITTING UNIT - Provided is an organic EL element, wherein the thickness of the organic EL element can be made small and the width of a seal can be made narrower, and change in light-emitting quality over time can be inhibited. The organic EL element ( | 2014-10-16 |
20140306212 | ORGANIC SEMICONDUCTOR DEVICE AND PROCESS FOR ITS PRODUCTION - An organic semiconductor device selected from organic diodes, organic field effect transistors, and devices comprising an organic diode and/or organic field effect transistor and a method of producing such a device are provided. The organic semiconductor device comprises at least one semiconducting layer based on a diketopyrrolopyrrole (DPP) polymer. The semiconducting layer may effectively be protected against degradation by radiation and/or oxidation by adding at least one stabilizing agent selected from hydroxybenzophenones, hydroxyphenyl benzotriazoles, oxalic acid anilides, hydroxyphenyl triazines, hindered phenols and/or merocyanines to the DPP polymer layer. The stabilization is effective both during production and during usage of the device, while the device's electronic properties are retained. The stabilizing agent is preferably a UV absorbing agent or an antioxidant or anti-radical agent known from the field of organic polymer technology. | 2014-10-16 |
20140306213 | ORGANIC EL ELEMENT - An organic EL element including: a transparent supporting substrate; a diffraction grating having a concavity and convexity layer with first concavities and convexities formed on a surface thereof and disposed on the transparent supporting substrate; and a transparent electrode, an organic layer, and a metal electrode which are stacked in this order on the diffraction grating and formed into such shapes that a shape of the first concavities and convexities formed on the surface of the diffraction grating is maintained, the organic layer comprising at least a light emitting layer. The organic EL element satisfies specified conditions (A) to (C). | 2014-10-16 |
20140306214 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - The present invention relates to an organic light emitting device and a method for preparing the same, and the organic light emitting device according to the present invention comprises: a substrate; a first electrode provided on the substrate; an organic material layer provided on the first electrode; a second electrode pattern provided on the organic material layer and comprising two or more metal layers spaced apart from each other; and a fuse layer provided in an entire region of an upper surface of the second electrode pattern and gaps between the metal layers spaced apart from each other. | 2014-10-16 |
20140306215 | GENERATION OF HIGHLY N-TYPE, DEFECT PASSIVATED TRANSITION METAL OXIDES USING PLASMA FLUORINE INSERTION - A new composition of matter is disclosed wherein oxygen vacancies in a semiconducting transition metal oxide such as titanium dioxide are filled with a halogen such as Fluorine, whereby the conductivity of the composition is greatly enhanced, while at the same time the chemical stability of the composition is greatly improved. Stoichiometric titanium dioxide having less than 3% oxygen vacancies is subject to fluorine insertion such that oxygen vacancies are filled, limited amounts of fluorine replace additional oxygen atoms and fluorine interstitially inserts into the body of the TiO | 2014-10-16 |
20140306216 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes an insulation substrate; a gate line and a data line on the insulation substrate; a first passivation layer on the gate line and the data line; an organic layer on the first passivation layer; a first electrode on the organic layer; a second passivation layer on the first electrode; and a second electrode on the second passivation layer. An edge of the organic layer is exposed by the first electrode. | 2014-10-16 |
20140306217 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device in which deterioration of electrical characteristics can be suppressed. The semiconductor device includes a first oxide semiconductor layer over an insulating surface, a second oxide semiconductor layer over the first oxide semiconductor layer, a source electrode layer and a drain electrode layer whose one surfaces are in contact with part of the first oxide semiconductor layer and part of the second oxide semiconductor layer, a third oxide semiconductor layer over the first oxide semiconductor layer and the second oxide semiconductor layer, a gate insulating film over the third oxide semiconductor layer, and a gate electrode layer over the gate insulating film. The second oxide semiconductor layer wholly overlaps with the first oxide semiconductor layer. Part of the third oxide semiconductor layer is in contact with the other surfaces of the source electrode layer and the drain electrode layer. | 2014-10-16 |
20140306218 | DISPLAY DEVICE AND ELECTRONIC DEVICE - Variation in the electrical characteristics of transistors is minimized and reliability of the transistors is improved. A display device includes a pixel portion | 2014-10-16 |
20140306219 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device including a resistor having an oxide semiconductor and a transistor having an oxide semiconductor over the same substrate. The semiconductor device includes the resistor and the transistor over the same substrate. The resistor includes at least a first oxide semiconductor layer. The transistor includes at least a second oxide semiconductor layer. The first oxide semiconductor layer and the second oxide semiconductor layer have the same composition, and the carrier density of the first oxide semiconductor layer is higher than the carrier density of the second oxide semiconductor layer. The carrier density of the first oxide semiconductor layer is higher than the carrier density of the second oxide semiconductor layer because the first oxide semiconductor layer is subjected to treatment for increasing oxygen vacancies and/or impurity concentration in the first oxide semiconductor layer. | 2014-10-16 |
20140306220 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - To provide a novel semiconductor device in which a reduction in channel length is controlled. The semiconductor device includes an oxide semiconductor layer having a crystal part, and a source electrode layer and a drain electrode layer which are in contact with the oxide semiconductor layer. The oxide semiconductor layer includes a channel formation region and an n-type region in contact with the source electrode layer or the drain electrode layer. The crystal orientation of the crystal part is different between the channel formation region and the n-type region. | 2014-10-16 |
20140306221 | SEMICONDUCTOR DEVICE - The stability of a step of processing a wiring formed using copper, aluminum, gold, silver, molybdenum, or the like is increased. Moreover, the concentration of impurities in a semiconductor film is reduced. Moreover, the electrical characteristics of a semiconductor device are improved. In a transistor including an oxide semiconductor film, an oxide film in contact with the oxide semiconductor film, and a pair of conductive films being in contact with the oxide film and including copper, aluminum, gold, silver, molybdenum, or the like, the oxide film has a plurality of crystal parts and has c-axis alignment in the crystal parts, and the c-axes are aligned in a direction parallel to a normal vector of a top surface of the oxide semiconductor film or the oxide film. | 2014-10-16 |
20140306222 | PIXEL STRUCTURE - A pixel structure includes a first conductive layer, a stacked layer, and a third conductive layer. The first conductive layer includes a first gate, a first scan line connected to the first gate, and a capacitor electrode separated from the first scan line. The stacked layer includes a semiconductor layer and a second conductive layer. The second conductive layer includes a data line, a first source connected to the data line, a second source, a first drain, a second drain, a connecting electrode connected to the second source and electrically connected to the first drain, and a coupling electrode connected to the second drain. The third conductive layer includes a first pixel electrode connected to the first drain, a second pixel electrode electrically connected to the connecting electrode, a first extending portion, and a second extending portion. | 2014-10-16 |
20140306223 | DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE - A display device includes a plurality of pixels arranged in a matrix. Each of the plurality of pixels includes a transistor and a pixel electrode arranged above the transistor through a first protective film and a second protective film. Among the plurality of pixels, the pixel electrodes of two pixels adjacent in a column direction are connected to corresponding source electrodes of the two pixels through second and third contact holes respectively. The second and third contact holes are formed in the first protective film within a first contact hole that is formed in the second protective film. | 2014-10-16 |
20140306224 | Display Device and Method for Manufacturing the Same - It is an object of the present invention to provide a display device preventing the external invasion of water and/or oxygen and preventing the deterioration of a luminous element due to these invading substances and to provide a production method including simple production steps for producing the display device. The invention provides a display device having a sealing material on the rim of an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Further, the invention provides a display device having a barrier body on an exposed interlayer insulator for preventing the invasion of water and/or oxygen from the interlayer insulator. Furthermore, the application of droplet discharge technique in production steps for producing the display device can eliminate a photolithography step such as exposing and developing. Thus, a method of producing a display device having an improved yield is provided. | 2014-10-16 |
20140306225 | THIN FILM TRANSISTOR AND SHIFT REGISTER - Thin film transistors having a high current drive capability and a suitable threshold voltage are provided. The thin film transistor includes a gate electrode, an insulating layer formed on the gate electrode, a semiconductor layer formed on the insulating layer, and source/drain electrodes formed on the semiconductor layer. The semiconductor layer includes a plurality of regions separated from each other in a longitudinal direction of the source/drain electrodes. | 2014-10-16 |
20140306226 | PIXEL STRUCTURE - A pixel structure including a substrate, an active device located on the substrate, a second reflective pattern, and a third reflective pattern is provided. The active device includes a gate, a channel, a source, and a drain. The source and the drain are connected to the channel and are separated from each other. The channel and the gate are stacked in a thickness direction. The second reflective pattern and the third reflective pattern are electrically connected to the drain of the active device. The second reflective pattern has second contact openings. The third reflective pattern is stacked on the second reflective pattern and covers the second contact openings of the second reflective pattern. The second reflective pattern is located between the third reflective pattern and the substrate. Moreover, other kinds of pixel structures are also provided. | 2014-10-16 |
20140306227 | DISPLAY APPARATUS, ARRAY SUBSTRATE, AND METHOD FOR PRODUCING THE ARRAY SUBSTRATE - A display apparatus, an array substrate, and a method for producing the array substrate are provides to so as to effectively reduce a horizontal distance occupied by the ESD assembly at each side of the display region of the substrate and achieve a good performance of the narrow edge frame of the TFT-LCD. The array substrate comprises a pixel region and a periphery wiring region, wherein an Electro-Static Discharge (ESD) assembly and a short-circuit ring are disposed in the periphery wiring region, and wherein the ESD assembly comprises a plurality of Thin Film Transistors (TFTs) each having a source electrode and a drain electrode that are disposed within the short-circuit ring. | 2014-10-16 |
20140306228 | LIGHT EMITTING DEVICE - It is an object of the present invention to prevent an insulating film from peeling in a section where the insulating film is adjacent to a sealing region. Over a first substrate | 2014-10-16 |
20140306229 | DISPLAY PANEL AND METHOD FOR PRODUCING DISPLAY PANEL - A display panel includes: a substrate; a bottom-gate thin-film transistor above the substrate and including a gate electrode, a first electrode, and a second electrode ; an insulating layer above the thin-film transistor and including a contact hole penetrating the insulating layer in a thickness direction of the insulating layer; a pixel electrode above the insulating layer and electrically connected to the second electrode via the contact hole; and a height adjusting layer selectively located below the contact hole to allow the contact hole to have a bottom at a raised level. | 2014-10-16 |
20140306230 | LED COMPONENT BY INTEGRATING EPITAXIAL STRUCTURE AND PACKAGE SUBSTRATE TOGETHER AND METHOD OF MANUFACTURING THE SAME - The present invention discloses an integral LED component which integrates LED epitaxial structures electrodes and interconnect with a package substrate together and an integral manufacturing process thereof. The integral LED component can be made with multiple epitaxial structures or with just a single epitaxial structure. The integral LED component can be mounted into a hollow carrier. And by having support by the hollow carrier, the package substrate can be mounted and contacted with a heat conductive or a dissipation device. The integral LED component is fabricated by wafer level process and cut from the wafer as an independent component. By different manufacturing process, the integral LED component can be made as Vertical LED structure or Lateral LED structure. | 2014-10-16 |
20140306231 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes: a first electrode; a second electrode; an interlayer insulating film made of a porous insulating material and formed above the first electrode and the second electrode; and connection parts electrically connected to the first electrode and the second electrode respectively, wherein a cavity is formed between the interlayer insulating film and a surface of the first electrode, a surface of the second electrode, and parts of surfaces of the connection parts. | 2014-10-16 |
20140306232 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD - Disclosed is a semiconductor device comprising at least one active layer ( | 2014-10-16 |
20140306233 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a semiconductor layer formed on a substrate, an electrode contact window that includes a recess formed on a surface of the semiconductor layer, an inner wall having a slope, and a source electrode, a drain electrode, and a gate electrode formed on the semiconductor layer, in which the drain electrode is in contact with the slope of the inner wall. | 2014-10-16 |
20140306234 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting diode whose front surface is supported and fixed on a package mounting surface and a transparent member bonded to the back surface of the light emitting diode. The light emitting diode has a light emitting layer on the front surface side. | 2014-10-16 |
20140306235 | Method for Producing a Semiconductor Device Comprising a Schottky Diode and a High Electron Mobility Transistor - A semiconductor device includes a Schottky diode and a High Electron Mobility Transistor (HEMT) formed on a III-nitride stack. The III-nitride stack includes at least a lower and an upper III-nitride layer forming a heterojunction therebetween, so that a 2-dimensional electron gas (2DEG) layer may be formed in the lower layer. The 2DEG layer serves as a charge carrier for the diode and the HEMT. A doped III-nitride layer may be present between a portion of the anode of the diode and the III-nitride stack, and the portion may be located between the diode's Schottky junction and the cathode. A further layer of doped III-nitride material may be present between the gate electrode of the HEMT and the III-nitride stack. The thickness of the III-nitride layers is not equal, so that the turn-on voltage of the diode and the threshold voltage of the HEMT may be tuned according to specific requirements. The disclosure also involves a method of producing such a semiconductor device. | 2014-10-16 |
20140306236 | SUCCESSIVE IONIC LAYER ADSORPTION AND REACTION PROCESS FOR DEPOSITING EPITAXIAL ZNO ON III-NITRIDE-BASED LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE INCLUDING EPITAXIAL ZNO - A method of forming a ZnO layer on a substrate and an LED including a ZnO layer formed by the method are provided. The ZnO layer is formed by using a Successive Ionic Layer Adsorption and Reaction (SILAR) process. The SILAR process includes: applying a first solution to a substrate comprising GaN, to form an inner ionic layer on the substrate and an outer ionic layer on the inner ionic layer; performing a first washing operation on the substrate to remove the outer ionic layer; and applying a second solution to the washed substrate to convert the inner ionic layer into a ZnO oxide layer. | 2014-10-16 |
20140306237 | LIGHT EMITTING ELEMENT AND METHOD OF MAKING SAME - A light emitting element that includes a Ga | 2014-10-16 |
20140306238 | SEMICONDUCTOR DEVICE AND ELECTRONIC APPARATUS - According to a semiconductor device ( | 2014-10-16 |
20140306239 | SEMICONDUCTOR DEVICE - A semiconductor device includes a first conduction type semiconductor substrate, a first conduction type semiconductor deposition layer, a trench, second conduction type wells, a JFET region, a first conduction type first source region, a first source region, a trench-type source electrode, a gate insulator film, a gate electrode, and a drain electrode. The trench is formed substantially perpendicularly to the semiconductor deposition layer so that the semiconductor deposition layer exposes to a bottom of the trench. The second conduction type second source region are formed in the first conduction type first source region. The trench-type source electrode is in contact with the first source region, the second source region, and the first conduction type semiconductor deposition layer to configure a Schottky junction. | 2014-10-16 |
20140306240 | LIGHT EMITTING DIODE PACKAGE - An exemplary light emitting diode package includes a substrate, a first electrode and a second electrode embedded in the substrate, and a light emitting chip fixed onto the first electrode by first glue. The first electrode has a first barrier member at a periphery of the first glue and below the light emitting chip. The first barrier member obstructs the first glue from spreading toward a side of the first barrier member away from the first glue and the light emitting chip, whereby a contamination by the first glue to an area of the top surface beside the side of the first barrier of the first electrode away from the first glue and the light emitting chip is prevented. | 2014-10-16 |
20140306241 | Light-Emitting Device - In a light-emitting device where reflective electrodes are regularly arranged, occurrence of interference fringes due to reflection of light reflected by the reflective electrode is inhibited. A surface of the reflective electrode of a light-emitting element is provided with a plurality of depressions. The shapes of the plurality of depressions are different from each other and do not have rotational symmetry. Irregularity of the surface shape of the reflective electrode is increased, which inhibits interference of light reflected by the reflective electrode. To form the plurality of depressions in the surface of the reflective electrode, for example, a surface of an insulating layer that is a base of the reflective electrode is made uneven. Reflecting the surface shape of the insulating layer, the reflective electrode has an uneven surface. | 2014-10-16 |
20140306242 | OPTICAL SEMICONDUCTOR LIGHTING APPARATUS - An optical semiconductor lighting apparatus including: a substrate in which a single LED chip or a plurality of LED chips are disposed; a first mold portion disposed on the substrate to cover the plurality of LED chips; and a second mold portion extending from an edge of the first mold portion and disposed on the substrate. The respective LED chips can improve adhesive strength with respect to the substrate through the first and second mold portions. Peeling, surface cracking and damage caused by moisture permeation can be prevented by the first and second mold portions. A fluorescent material included in the second mold portion can improve a wavelength conversion rate. | 2014-10-16 |
20140306243 | LIGHT EMITTING DEVICE - A light emitting device includes a frame, a plurality of first light emitting units and a plurality of second light emitting units. The frame includes a base, a plurality of first pillars and a plurality of second pillars, wherein the first pillars and the second pillars are extended from a periphery of the base and arranged interlacedly, the first pillars are bent inwardly with respect to the base, and the second pillars are bent outwardly with respect to the base. Each of the first light emitting units is disposed on one of the first pillars. Each of the second light emitting units is disposed on one of the second pillars. | 2014-10-16 |
20140306244 | CONDUCTIVE PHOSPHOR LAYER ELECTRODE FOR VERTICAL LED - In a method for forming a phosphor-converted LED, an array of vertical LEDs is printed over a conductive surface of a substrate such that a bottom electrode of the LEDs ohmically contacts the conductive surface. A dielectric layer then formed over the conductive surface. An electrically conductive phosphor layer is deposited over the dielectric layer and the LEDs to ohmically contact the top surface of the LEDs and connect the LEDs in parallel. The conductive phosphor layer is formed by phosphor particles intermixed with a transparent conductor material. One or more metal contacts over the conductive phosphor layer conduct current through the conductive phosphor layer and the LEDs to illuminate the LEDs. A portion of light generated by the LED leaks through the conductive phosphor layer, and the combination of the LED light and phosphor light creates a composite light. | 2014-10-16 |
20140306245 | LIGHT EMITTING DEVICE - A light emitting device has: a first lead which is mounted a light emitting element, a second lead separated by an interval from the first lead, an insulating member configured to fix the first lead and the second lead, a wavelength conversion portion configured to cover the light emitting element, and a lens portion configured to cover the wavelength conversion portion, a thickness of the insulating member is equal to the thickness of the first lead and the second lead, a groove or a recessed portion is provided to retain the wavelength conversion portion in a specific region is formed in the first lead, and a lower surface of the first lead that forms an opposite side of a region formed on the wavelength conversion portion is not covered by the insulating member and is exposed to the outside. | 2014-10-16 |
20140306246 | LIGHT SOURCE MODULE - A light source module including a substrate, a plurality of first light emitting diode (LED) chips, and at least one second LED chip is provided. The substrate has an upper surface. The plurality of first LED chips are disposed on the upper surface and electrically connected to the substrate. The second LED chip is disposed on the upper surface and electrically connected to the substrate. A first distance is between a top surface of each of the first LED chips away from the upper surface of the substrate and the upper surface, a second distance is between a top surface of the second LED chip away from the upper surface of the substrate and the upper surface, and the second distance is greater than each of the first distances. | 2014-10-16 |
20140306247 | LIGHT EMITTING DEVICE, AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device improves light extraction efficiency and may be individually driven in a light emitting device package and/or a light unit. The light emitting device may include first and second light emitting structures. The light emitting structure may include a first conductive first semiconductor layer, a first active layer under the first conductive first semiconductor layer, and a second conductive second semiconductor under the first active layer. The second light emitting structure may include a first conductive third semiconductor layer, a second active layer under the first conductive third semiconductor layer, and a second conductive fourth semiconductor layer under the second active layer. | 2014-10-16 |
20140306248 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a nitride light emitting diode (LED) package, and more specifically, to a nitride light emitting diode package which can improve light-emitting efficiency by increasing light emitting surface area, reduce operating voltage by simultaneously emitting light from six cells at once, and can increase operating current. | 2014-10-16 |
20140306249 | LIGHTING APPARATUS - This lighting apparatus includes three or more LEDs arranged in a row. Each of the LEDs emits light of a color different from that of an LED adjacent to itself, and the LEDs include an LED having a relatively wide light distribution angle and others of the three or more LEDs each having a relatively narrow light distribution angle. The one LED is arranged in an inner portion in the row of the other LEDs. In this configuration, light emitted from the one LED is mixed well with lights emitted from the respective other LEDs adjacent to the one LED, and thus, color unevenness of illuminating light can be reduced. | 2014-10-16 |
20140306250 | SOLID-STATE LIGHTING DEVICE AND METHOD OF MANUFACTURING SAME - The present technology provides a solid-state lighting device and method of manufacturing same. The device can include a carrier substrate having registration features on a first side; light-emitting elements (LEEs) operatively coupled with the registration features; electrically conductive elements (ECEs) operatively coupled with a first side, where the ECEs operatively interconnect the LEEs; and one or more cover layers operatively coupled with the LEEs. The ECEs, furthermore, can be configured to operatively connect the LEEs to a source of power. | 2014-10-16 |
20140306251 | PATTERNED LIGHT EMITTING ELEMENT SUBSTRATE - Disclosed is a patterned light-emission element substrate including a surface consisted of a plurality of cones, and the surface of each cone is roughened by a wet etch roughening treatment to produce a rough surface. | 2014-10-16 |
20140306252 | OPTICAL DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides an optical device, and the optical device comprises a luminous element and a gradient-index nanoparticle layer and scattering particles composed by particles stack with different refractive indexes and particle sizes. The luminous element has a light emitting surface. The refractive indexes of the nanoparticle layers decrease bottom up. The nanoparticles based gradient-index nanoparticle layer comprises a plurality of dielectric layers with different refractive index, and the dielectric scattering particle layers are stacked upward from the light emitting surface to let the gradient-index nanoparticle layer and scattering particles cover the light emitting surface. The method for manufacturing the abovementioned optical device is also disclosed. | 2014-10-16 |
20140306253 | Light Emitting Device - This disclosure relates to a light-emitting apparatus comprising a submount, a chip carrier formed on the submount, a light-emitting chip formed on the chip carrier, a reflecting cup formed on the submount and enclosing the light-emitting chip and the chip carrier, and a transparent encapsulating material for encapsulating the light-emitting chip. | 2014-10-16 |
20140306254 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD FOR SAME - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a reflective ohmic contact layer on the support substrate, a functional complex layer including a process assisting region and ohmic contact regions divided by the process assisting region on the reflective ohmic contact layer, and a light emitting semiconductor layer including a second conductive semiconductor layer, an active layer, and a first conductive semiconductor layer on each ohmic contact regio. | 2014-10-16 |
20140306255 | LIGHT EMITTING DIODE - A light emitting diode includes a substrate, graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer is on the epitaxial growth surface of the substrate. The active layer is between the first semiconductor layer and the second semiconductor layer. The first electrode is electrically connected with the second semiconductor layer and the second electrode electrically is connected with the second part of the carbon nanotube layer. The graphene layer is located between the active layer and the first semiconductor layer. | 2014-10-16 |
20140306256 | LIGHT EMITTING DIODE - A light emitting diode includes a graphene layer, a first semiconductor layer, an active layer, a second semiconductor layer, a first electrode and a second electrode. The first semiconductor layer, the active layer, and the second semiconductor layer are stacked with each other in sequence. The first electrode is located on and electrically connected with the second semiconductor layer. The second electrode is located on and electrically connected with the first semiconductor layer. The graphene layer is located between the active layer and the first semiconductor layer. | 2014-10-16 |
20140306257 | LED PACKAGE AND METHOD FOR FABRICATING THE SAME - A light emitting diode (LED) package according to an exemplary embodiment of the present invention includes a base including a first lead terminal and a second lead terminal, an LED chip disposed on the base, a housing disposed on the base, the housing having a cavity in which the LED chip is disposed, and an encapsulation member having a side surface contacting the housing. The first lead terminal and the second lead terminal each have a first surface and a second surface opposite the first surface, and have an unbent form, respectively. The second surface is exposed to the outside of the LED package. | 2014-10-16 |
20140306258 | CERAMIC CONVERSION ELEMENT, OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING A CERAMIC CONVERSION ELEMENT, AND METHOD FOR PRODUCING A CERAMIC CONVERSION ELEMENT - A ceramic conversion element having a multiplicity of columnar regions arranged within a ceramic or vitreous matrix, wherein the columnar regions have a preferential direction which makes an angle of at most 45° with a normal to the main surface of the conversion element, at least either the columnar regions or the matrix convert electromagnetic radiation of a first wavelength range into electromagnetic radiation of a second wavelength range different from the first wavelength range and, the columnar regions are formed by wavelength-converting monocrystalline or ceramic fibers and/or monocrystalline or ceramic platelets, said fibers and/or said platelets are provided with a reflective coating. | 2014-10-16 |
20140306259 | LIGHT EMITTING DIODE - A siloxane compound comprises a plurality of siloxane repeating units and at least a portion of the siloxane repeating units are cyclosiloxane repeating units conforming to a specified structure. A process for producing such siloxane compounds is also provided. A process and kit for producing a cross-linked silicone polymer using the described siloxane compounds is also provided. A light emitting diode (LED) comprises an encapsulant, and the encapsulant comprises a cross-linked silicone polymer produced from the described siloxane compounds. | 2014-10-16 |
20140306260 | LIGHT-EMITTING DEVICE - A light-emitting device or a display device that is less likely to be broken is provided. Provided is a light-emitting device including an element layer and a substrate over the element layer. At least a part of the substrate is bent to the element layer side. The substrate has a light-transmitting property and a refractive index that is higher than that of the air. The element layer includes a light-emitting element that emits light toward the substrate side. Alternatively, provided is a light-emitting device including an element layer and a substrate covering a top surface and at least one side surface of the element layer. The substrate has a light-transmitting property and a refractive index that is higher than that of the air. The element layer includes a light-emitting element that emits light toward the substrate side. | 2014-10-16 |
20140306261 | ELECTRONIC DEVICE PACKAGE AND PACKAGE SUBSTRATE FOR THE SAME - There is provided an electronic device package including an electronic device including a first electrode and a second electrode disposed on a surface thereof, a package substrate having a first surface having the electronic device mounted thereon and a second surface opposed to the first surface. The package substrate includes a first electrode pattern and a second electrode pattern electrically connected to the first electrode and the second electrode on the first surface, respectively. The package substrate further includes at least one via hole disposed outside of a region for mounting the electronic device and an irregular portion disposed on the first surface to be adjacent to the via hole. | 2014-10-16 |
20140306262 | SIDE-VIEW TYPE LIGHT EMITTING APPARATUS AND PACKAGE - A surface mount lateral light emitting apparatus, which includes a light emitting device; a first lead frame connected to the light emitting device; a second lead frame connected to the light emitting device; a first resin molding body in which a concave portion for mounting the light emitting device is formed and the first lead frame and the second lead frame are fixed; and a second resin molding body which covers the light emitting device to form a light emitting surface in the concave portion of the first resin molding body, wherein the first resin molding body contains a filler or a light diffusion agent; wherein in a periphery of the concave portion, a width of at least one side of the first resin molding body is not more than 0.2 mm; and wherein the first resin molding body and the second resin molding body are formed with a thermosetting resin. | 2014-10-16 |
20140306263 | TRANSPARENT CONDUCTIVE COATING WITH FILLER MATERIAL - An article is disclosed comprising a network-like pattern of conductive traces formed of at least partially joined nanoparticles that define randomly-shaped cells that are generally transparent to light and contain a transparent filler material. In a preferred embodiment, the filler material is conductive such as a metal oxide or a conductive polymer. In another preferred embodiment, the filler material is an adhesive that is can be used to transfer the network from one substrate to another. A preferred method of forming the article is also disclosed wherein an emulsion containing the nanoparticles in the solvent phase and the filler material in the water phase is coated onto a substrate. The emulsion is dried and the nanoparticles self-assemble to form the traces and the filler material is deposited in the cells. An electroluminescent device is also disclosed wherein the article of the invention forms a transparent electrode in the device. | 2014-10-16 |
20140306264 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer, a conductive support member disposed under the second conductive semiconductor layer, an insulating layer disposed between the second conductive semiconductor layer and the conductive support member, and a stepped conductive layer disposed between the second conductive semiconductor layer and the conductive support member. The stepped conductive layer includes a lower parts and an upper parts. The upper parts are directly contacted with the second conductive semiconductor layer. The lower parts are disposed between the insulating layer and the conductive support member. The insulating layer is laterally disposed between the plurality of upper parts. | 2014-10-16 |
20140306265 | SAPPHIRE SUBSTRATE AND SEMICONDUCTOR LIGHT EMITTING DEVICE - The sapphire substrate has a principal surface for growing a nitride semiconductor to form a nitride semiconductor light emitting device and comprising a plurality of projections of the principal surface, wherein an outer periphery of a bottom surface of each of the projections has at least one depression. This depression is in the horizontal direction. The plurality of projections are arranged so that a straight line passes through the inside of at least any one of projections when the straight line is drawn at any position in any direction in a plane including the bottom surfaces of the plurality of projections. | 2014-10-16 |
20140306266 | HIGH-CURRENT N-TYPE SILICON-ON-INSULATOR LATERAL INSULATED-GATE BIPOLAR TRANSISTOR - A high-current, N-type silicon-on-insulator lateral insulated-gate bipolar transistor, including: a P-type substrate, a buried-oxide layer disposed on the P-type substrate, an N-type epitaxial layer disposed on the oxide layer, and an N-type buffer trap region. A P-type body region and an N-type central buffer trap region are disposed inside the N-type epitaxial layer; a P-type drain region is disposed in the buffer trap region; N-type source regions and a P-type body contact region are disposed in the P-type body region; an N-type base region and a P-type emitter region are disposed in the buffer trap region; gate and field oxide layers are disposed on the N-type epitaxial layer; polycrystalline silicon gates are disposed on the gate oxide layers; and a passivation layer and metal layers are disposed on the surface of the symmetrical transistor. P-type emitter region output and current density are improved without increasing the area of the transistor. | 2014-10-16 |
20140306267 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device including a semiconductor substrate in which a diode region and an IGBT region are formed is provided. In the semiconductor device, the diode region includes a second conductivity type cathode layer. An impurity concentration of second conductivity type impurities of the cathode layer is distributed in a curve pattern having at least two peaks, and the impurity concentration of the second conductivity type impurities is higher than that of first conductivity type impurities at all depths of the cathode layer. | 2014-10-16 |
20140306268 | METHOD FOR OBTAINING A HETEROGENEOUS SUBSTRATE FOR THE PRODUCTION OF SEMICONDUCTORS, AND CORRESPONDING SUBSTRATE - A method for obtaining a heterogeneous substrate intended for use in the production of a semiconductor comprises the following steps: (a) obtaining a first substrate ( | 2014-10-16 |
20140306269 | VERTICAL PMOS FIELD EFFECT TRANSISTOR AND MANUFACTURING METHOD THEREOF - A PMOS field effect transistor includes a substrate, a first nitride layer, a mesa structure, two gate oxide films, a gate stack layer and a second nitride layer. The substrate has a oxide layer and a first doping area. The first nitride layer is located on the oxide layer. The mesa structure includes a first strained Si—Ge layer, an epitaxial Si layer and a second strained Si—Ge layer. The first strained Si—Ge layer is located on the oxide layer and the first nitride layer. The epitaxial Si layer is located on the first strained Si—Ge layer. The second strained Si—Ge layer is located on the epitaxial Si layer. In the surface layer of the second strained Si—Ge layer, there is a second doping area. The two gate oxide films are located at two sides of the mesa structure. | 2014-10-16 |
20140306270 | MULTI-SOURCE JFET DEVICE - A junction field-effect transistor (JFET) device is provided. The JFET includes a drain region, a source region, and a junction gate region disposed between the drain region and the source region, and the source region includes two or more source terminals. | 2014-10-16 |
20140306271 | Unltra-Shallow Junction Semiconductor Field-Effect Transistor and Method of Making - An ultra-shallow junction semiconductor field-effect transistor and its methods of making are disclosed. In the present disclosure, a mixture film is formed on a semiconductor substrate with a gate structure formed thereon using a physical vapor deposition (PVD) process, which employs a mixture of metal and semiconductor dopants as a target. The PVD process is followed by annealing, during which ultra-shallow junctions and ultra-thin metal silicide are formed. After removing the mixture film remaining on the semiconductor substrate, an ultra-shallow junction semiconductor field-effect transistor is formed. Because the mixture film comprises metal and semiconductor dopants, ultra-shallow junctions and ultra-thin metal silicide can be formed in a same annealing process. The ultra-shallow junction thus formed can be used in semiconductor field-effect transistors for the 14 nm, 11 nm, or even further technology node. | 2014-10-16 |
20140306272 | METHOD OF FORMING A FINFET STRUCTURE - A method of forming a fin structure is provided. First, a substrate is provided, wherein a first region, a second region encompassing the first region, and a third region encompassing the second region are defined on the substrate. Then, a plurality of first trenches having a first depth are formed in the first region and the second region, wherein each two first trenches defines a first fin structure. The first fin structure in the second region is removed. Lastly, the first trenches are deepened to form a plurality of second trenches having a second depth, wherein each two second trenches define a second fin structure. The present invention further provides a structure of a non-planar transistor. | 2014-10-16 |
20140306273 | STRUCTURE OF METAL GATE STRUCTURE AND MANUFACTURING METHOD OF THE SAME - A manufacturing method of a metal gate structure is provided. First, a substrate covered by an interlayer dielectric is provided. A gate trench is formed in the interlayer dielectric, wherein a gate dielectric layer is formed in the gate trench. A silicon-containing work function layer is formed on the gate dielectric layer in the gate trench. Finally, the gate trench is filled up with a conductive metal layer. | 2014-10-16 |
20140306274 | SELF-ALIGNED STRUCTURE FOR BULK FinFET - A FinFET structure which includes a bulk semiconductor substrate; semiconductor fins extending from the bulk semiconductor substrate, each of the semiconductor fins having a top portion and a bottom portion such that the bottom portion of the semiconductor fins is doped and the top portion of the semiconductor fins is undoped; a portion of the bulk semiconductor substrate directly underneath the plurality of semiconductor fins being doped to form an n+ or p+ well; and an oxide formed between the bottom portions of the fins. | 2014-10-16 |
20140306275 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device is disclosed. The semiconductor device includes an insulating layer formed selectively on a semiconductor layer; a lower electrode, formed on the insulating layer, having an end portion at a position spaced apart by a predetermined distance inward from a periphery of the insulating layer; a dielectric film formed on the lower electrode; an upper electrode, formed on the dielectric film, facing the lower electrode with the dielectric film interposed between the upper electrode and the lower electrode; and a passivation film, formed to cover the insulating layer, starting from the end portion of the lower electrode and extending toward the periphery of the insulating layer. The passivation film includes an insulating material having an etching selectivity with respect to the insulating layer. | 2014-10-16 |
20140306276 | SOLID-STATE IMAGING DEVICE AND IMAGING APPARATUS - The present technique relates to a solid-state imaging device and an imaging apparatus that enable provision of a solid-state imaging device having superior color separation and high sensitivity. | 2014-10-16 |
20140306277 | SEMICONDUCTOR STORAGE DEVICE - A memory includes a semiconductor substrate. Magnetic tunnel junction elements are provided above the semiconductor substrate. Each of the magnetic tunnel junction elements stores data by a change in a resistance state, and the data is rewritable by a current. Cell transistors are provided on the semiconductor substrate. Each of the cell transistors is in a conductive state when the current is applied to the corresponding magnetic tunnel junction element. Gate electrodes are included in the respective cell transistors. Each of the gate electrodes controls the conductive state of the corresponding cell transistor. In active areas, the cell transistors are provided, and the active areas extend in an extending direction of intersecting the gate electrodes at an angle of (90−atan(⅓)) degrees. | 2014-10-16 |
20140306278 | SEMICONDUCTOR DEVICE WITH BURIED BIT LINE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes an active body having two sidewalls facing each other in a lateral direction, a junction formed in a sidewall of the two sidewalls, a dielectric layer having an open portion to expose the junction and covering the active body, a junction extension portion having a buried region to fill the open portion, and a bit line coupled to the junction extension portion. | 2014-10-16 |
20140306279 | SEMICONDUCTOR DEVICES INCLUDING WORD LINE INTERCONNECTING STRUCTURES - A semiconductor memory device includes a substrate including a cell region and an interconnection region, adjacent first and second rows of vertical channels extending vertically from the substrate in the cell region, and layers of word lines stacked on the substrate. Each layer includes a first word line through which the first row of vertical channels passes and a second word line through which the second row of vertical channels passes, and the word lines include respective word line pads extending into the interconnection region. An isolation pattern separates the first and second word lines in the cell region and the interconnection region. First and second pluralities of contact plugs are disposed on opposite sides of the isolation pattern in the interconnection region and contact the word line pads. | 2014-10-16 |