39th week of 2010 patent applcation highlights part 19 |
Patent application number | Title | Published |
20100243948 | Refrigerant Additive Compositions Containing Perfluoropolyethers - The present invention relates to compositions and processes of using perfluoropolyether to maintain or improve the oil return, lubrication, cooling capacity, or energy efficiency of a refrigeration, air conditioning or heat transfer system. | 2010-09-30 |
20100243949 | Thermally Conductive Silicone Composition - A thermally conductive silicone composition includes 25 to 50 volume % of a silicone, 30 to 60 volume % of a first heat conducting filler, and 20 to 40 volume % of a second heat conducting filler, and 1 to 2 volume % of a third heat conducting filler. The thermally conductive silicone composition has two heat conducting fillers with different sizes dispersed therein, thus the thermal impedance can be efficiently reduced. | 2010-09-30 |
20100243950 | POLISHING AGENT FOR SYNTHETIC QUARTZ GLASS SUBSTRATE - Disclosed is a polishing agent for synthetic quartz glass substrates, which is characterized by containing a colloidal solution of a colloidal silica or the like having a colloid concentration of 20-50% by mass, and a polycarboxylic acid polymer, an acidic amino acid, a phenol or a glycosaminoglycan. | 2010-09-30 |
20100243951 | NEGATIVE ELECTRODE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, MAKING METHOD AND LITHIUM ION SECONDARY BATTERY - A negative electrode material comprising composite particles having silicon nano-particles dispersed in silicon oxide is suited for use in nonaqueous electrolyte secondary batteries. The silicon nano-particles have a size of 1-100 nm. The composite particles contain oxygen and silicon in a molar ratio: 02010-09-30 | |
20100243952 | Spinel Type Lithium Transition Metal Oxide - In order to provide a novel spinel type lithium transition metal oxide (LMO) having excellent power performance characteristics, in which preferably both the power performance characteristics and the cycle performance at high temperature life characteristics may be balanced, a novel spinel type lithium transition metal oxide with excellent power performance characteristics is proposed by defining the inter-atomic distance Li—O to be 1.978 Å to 2.006 Å as measured by the Rietveld method using the fundamental method in a lithium transition metal oxide represented by the general formula Li | 2010-09-30 |
20100243953 | Method of Dynamic Mixing of Fluids - Methods are provided for achieving dynamic mixing of two or more fluid streams using a mixing device. The methods include providing at least two integrated concentric contours that are configured to simultaneously direct fluid flow and transform the kinetic energy level of the first and second fluid streams, and directing fluid flow through the at least two integrated concentric contours such that, in two adjacent contours, the first and second fluid streams are input in opposite directions. As a result, the physical effects acting on each stream of each contour are combined, increasing the kinetic energy of the mix and transforming the mix from a first kinetic energy level to a second kinetic energy level, where the second kinetic energy level is greater than the first kinetic energy level. | 2010-09-30 |
20100243954 | PERFLUOROALKYLATED BENZOATE SURFACTANTS - Provided are new compounds based on salts of aromatic acids containing perfluoroalkyl substituents. The compounds can be used as surfactants. | 2010-09-30 |
20100243955 | LIQUID CRYSTAL ALIGNMENT SOLUTION - A liquid crystal alignment solution is provided. The liquid crystal alignment solution includes at least one polymer selected from the group consisting of a polyamide acid-polyamide acid polymer represented by formula (A), a polyimide-polyamide acid polymer represented by formula (B) and a polyimide-polyimide polymer represented by formula (C), | 2010-09-30 |
20100243956 | LIQUID-CRYSTALLINE MEDIUM AND LIQUID-CRYSTAL DISPLAY - The present invention relates to dielectrically positive liquid-crystalline media comprising a dielectrically positive component, component A, comprising a dielectrically positive compound of the formula (I), in which the parameters have the meaning indicated in the specification, and optionally a second dielectrically positive component, component B, comprising one or more dielectrically positive compounds having a dielectric anisotropy of greater than 3 and optionally a dielectrically neutral component, component C, and to liquid-crystal displays, especially to active-matrix displays and in particular to TN, IPS, FFS and OCB displays, containing these media. | 2010-09-30 |
20100243957 | Liquid Crystal Composition and Liquid Crystal Display Device - The invention provides a liquid crystal composition that satisfies at least one characteristic among the characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a large optical anisotropy, a large dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light, and a high stability to heat, or provides a liquid crystal composition that is properly balanced regarding at least two characteristics. The invention provides an AM device that has a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth. A liquid crystal display device contains the liquid crystal composition having a nematic phase that includes two components, wherein the first component is a specific compound having a large optical anisotropy and a large dielectric anisotropy and the second component is a specific compound having a small viscosity or a large maximum temperature. The liquid crystal display device contains the composition. | 2010-09-30 |
20100243958 | Liquid Crystalline Medium - Disclosed are a liquid-crystalline medium of negative dielectric anisotropy based on a mixture of polar compounds, which contains at least one compound of formula IA | 2010-09-30 |
20100243959 | Derivative With Heteroaromatic Ring, and Light-Emitting Element, Light-Emitting Device, Lighting Device, and Electronic Device Using Derivative With Heteroaromatic Ring - A derivative with a heteroaromatic ring represented by General Formula (G1) is provided. R | 2010-09-30 |
20100243960 | COATING SOLUTION FOR APPLICATION METHOD OF DISCHARGING COATING SOLUTION THROUGH SLIT-LIKE DISCHARGE PORT - A coating solution for an application method in which a coating solution is discharged through a slit discharge port includes an organic compound that is a solid at 20° C., a first solvent having a boiling point of lower than 170° C. and a second solvent having a boiling point of 170° C. or higher. | 2010-09-30 |
20100243961 | SYSTEMS AND METHODS FOR QUENCHING, GAS CLEAN UP, AND ASH REMOVAL - A method, apparatus, and system for a solar-driven chemical plant are disclosed. An embodiment may include a solar thermal receiver aligned to absorb concentrated solar energy from one or more solar energy concentrating fields. A solar driven chemical reactor may include multiple reactor tubes located inside the solar thermal receiver. The multiple reactor tubes can be used to gasify particles of biomass in the presence of a carrier gas. The gasification reaction may produce reaction products that include hydrogen and carbon monoxide gas having an exit temperature from the tubes exceeding 1000 degrees C. An embodiment can include a quench zone immediately downstream of an exit of the chemical reactor. The quench zone may immediately quench via rapid cooling of at least the hydrogen and carbon monoxide reaction products within 0.1-10 seconds of exiting the chemical reactor to a temperature of 800 degrees C. or less. | 2010-09-30 |
20100243962 | MICROENCAPSULATED SILANE COUPLING AGENT - A microencapsulated silane coupling agent includes adduct particles of an epoxy compound and an imidazole silane coupling agent, and an ethyl cellulose film coating a periphery of the adduct particles, in which the ethyl cellulose film is crosslinked by a polyfunctional isocyanate compound. Preferred examples of the imidazole silane coupling agent include a compound represented by the formula (1), | 2010-09-30 |
20100243963 | Doping and milling of granular silicon - Doped silicon particles, including powder suitable for plasma spraying semiconductor devices, is formed by liquid doping applied to larger particles, which are then milled to a smaller size. Doped or undoped silicon may be milled by a roller mill including silicon rollers and advantageously having feed and collection systems formed of silicon and operated in a nitrogen ambient. A two-stage system includes sieving the rolled product for further size reduction in a jet mill. | 2010-09-30 |
20100243964 | COMPOSITE FOR ELECTRODE ACTIVE MATERIAL AND SECONDARY BATTERY COMPRISING THE SAME - Disclosed are a composite which can be used as an electrode active material for a secondary battery, and the secondary battery comprising the same. The composite includes: a first material selected from the group consisting of metals and metalloids capable of being reversibly alloyed with lithium; a second material selected from the group consisting of metals incapable of being alloyed with lithium, compounds containing the metals, and compounds containing metals or metalloids capable of being irreversibly alloyed with lithium; and a third material which is at least one kind of metal having a higher electrical conductivity than the second material, wherein a content of the third material ranges from 10 to 10,000 ppm based on the total weight of the composite. In the composite, the third material increases the electrical conductivity, thereby forming an electrical conducting path between materials within the composite. This allows the volume of a battery to be uniformly changed during the charge/discharge. Thus, when the composite is used as an electrode active material for a secondary battery, it is possible to improve a life characteristic of the battery, and minimize a change in a thickness of the electrode. | 2010-09-30 |
20100243965 | Process for preparing a thermosetting composite material with a high nanotube content - The present invention provides a process for preparing a composite material containing from 15% to 60% by weight of nanotubes, comprising:
| 2010-09-30 |
20100243966 | ZnO VAPOR DEPOSITION MATERIAL, PROCESS FOR PRODUCING THE SAME, AND ZnO FILM - A ZnO vapor deposition material for formation of a transparent conductive film or the like consists mainly of a porous ZnO sintered body containing one or more first additive elements selected from Ce, La, Y, Pr, Nd, Pm, and Sm, and second additive elements selected from Al, Ga, Sc, and B. The content of the first additive elements is higher than the content of the second additive elements. The content of the first additive elements is in a range of 0.1 to 14.9% by mass, and the content of the second additive elements is in a range of 0.1 to 10% by mass. The sintered body has a porosity of 3 to 50%. | 2010-09-30 |
20100243967 | COMPOSITION CONTAINING FINE SILVER PARTICLES, PRODUCTION METHOD THEREOF, METHOD FOR PRODUCING FINE SILVER PARTICLES, AND PASTE HAVING FINE SILVER PARTICLES - A composition containing fine silver particles which have a uniform particle size, can form a fine drawing pattern, and have a small environmental impact, a method for producing that composition, a method for producing fine silver particles, and a paste having fine silver particles are provided. | 2010-09-30 |
20100243968 | Titanic Acid Compound, Process For Producing The Titanic Acid Compound, Electrode Active Material Containing The Titanic Acid Compound, And Storage Device Using The Electrode Active Material - This invention provides a titanic acid compound-type electrode active material having a high battery capacity and, at the same time, having excellent cycle characteristics. The titanic acid compound exhibits an X-ray diffraction pattern corresponding to a bronze-type titanium dioxide except for a peak for a (003) face and a (−601) face and having a lattice spacing difference between the (003) face and the (−601) face, i.e., d | 2010-09-30 |
20100243969 | DIELECTRIC HEAT-TRANSFER FLUID - Provided is a use of a vegetable oil high in monounsaturates as dielectric and heat-transfer fluid in a device for the generation, storage, conversion and/or distribution of electrical energy. | 2010-09-30 |
20100243970 | RESIN BLACK MATRIX, LIGHT BLOCKING PHOTOSENSITIVE RESIN COMPOSITION, TFT ELEMENT SUBSTRATE AND LIQUID CRYSTAL DISPLAY DEVICE - Provided is a highly reliable resin black matrix, which has sufficient light-blocking characteristics, suppresses temperature increase due to heat generated by a TFT element and does not have failures of a TFT element substrate and fluctuation in liquid crystal drive. The maximum light transmittance of the resin black matrix in a wavelength range of 400 nm-700 nm is permitted to be 1% or less and the average light transmittance in a wavelength range of 850 nm-3,000 nm to be 60% or higher. Alternatively, the minimum light transmittance is permitted to be 50% or more. | 2010-09-30 |
20100243971 | PHOTOCHROMIC BENZOPYRANS - The present invention relates to photochromic benzopyrans and to the use thereof in plastics of all kinds, especially for ophthalmic purposes. The inventive compounds are photochromic benzopyran compounds in which a polycyclic aromatic is joined to the 5 and 6 positions of a benzopyran, where the bond in the 6 position is direct and the bond in the 5 position is via a mono- or diatomic bridge. | 2010-09-30 |
20100243972 | METHOD FOR THE PREPARATION OF REACTIVE [18] F FLUORIDE - The present invention is related to a method to obtain reactive [18F] fluorides in an organic medium suitable for radiolabelling without any azeotropic evaporation step, by the use of a solid phase extraction column containing a modified non-ionic solid support. | 2010-09-30 |
20100243973 | SCISSOR-TYPE LIFTING PLATFORM - The invention relates to a scissors-type lifting platform, in particular for vehicles: including: stationary support rails on or in the floor level, at least two scissors arms which cross each other and are retained and guided with their bottom ends in the support rails, a hinge connecting the two scissors arms approximately centrally to each other, a lifting assembly engaging the scissors arms for spreading and contracting the scissors arms, at least one travel rail having contact areas and supported on the top ends of the scissors arms, wherein one of the scissors arms is connected to a travel rail with its top end in hinged manner and the other scissors arm is guided on the travel rail with its top end in longitudinally displaceable manner upon the lifting and lowering movement of the scissors-type lifting platform, characterized in that the longitudinally displaceable ends of the two scissors arms ( | 2010-09-30 |
20100243974 | Apparatus and method for entering information on small keyboards - There is disclosed an apparatus and method for entering information on small keyboards where the apparatus is worn on the thumb or finger like a ring and has a protrusion that is securely attached to said apparatus and acts as an extension of the thumb or finger when striking keys on a small keyboard. The apparatus can be made of, or in combination of, elastic, plastic, rubber, velcro, or other suitable material that fits snugly over the thumbs or fingers. | 2010-09-30 |
20100243975 | Fence post mounting device - An improved fence post mounting device is disclosed for supporting accessory articles upon a hollow fence post. The device comprises a cap member sized to fit over and upon the open top of the hollow fence post as a cover therefor, an elongated shaft member attached to the inside of the cap member and extending lengthwise therefrom to engage the chamber of the post, and support means coupled to the top of the cap member for holding or hanging the decorative accessories. In one preferred embodiment, the shaft member is fabricated having a pair of flanges formed on opposite sides of an intermediate web to provide a substantially “H” transverse cross section designed to fit closely within the chamber of a rectangular fence post while the full length of the shaft member is able to penetrate the post a sufficient length to allow a sealed fit of the cap member with the top of the post. Proper orientation of the shaft member and its transverse cross section allows the shaft member to fully penetrate the post chamber without interference with lateral rail connections made with the post and interlocks the assembly for proper mounting support. | 2010-09-30 |
20100243976 | TEMPORARY RIGID STRUCTURE TO CONTROL THE FLOW OF PERSONS INTO THE ENTRY-WAY OF A VENUE - A temporarily modified entry way to a venue and a method of temporarily transforming an external entry way of a venue. A temporary rigid structure is erected outside of a venue such that the temporary rigid structure guides persons from at least one inlet of the structure to at least one exit of the structure through at least one passageway in a queued manner, where an exit of the structure is located at an entrance into the venue. The temporary rigid structure may be erected quickly for use and subsequently disassembled quickly when no longer needed. | 2010-09-30 |
20100243977 | Apparatus for Protecting Mailboxes from Snowplow Damage - An apparatus comprises a panel supported by a rigid frame, one or more pivoting arms, one or more front legs, and one or more back legs. The one or more pivoting arms are pivotally attached to the frame. Each of the one or more front legs is telescopically coupled to the frame such that each of the one or more front legs can be independently extended from and retracted into the frame. Finally, each of the one or more back legs is telescopically coupled to a respective one of the one or more pivoting arms such that each of the one or more back legs can be independently extended from and retracted into a respective one of the one or more pivoting arms. | 2010-09-30 |
20100243978 | GUARDRAIL ASSEMBLY, BREAKAWAY SUPPORT POST FOR A GUARDRAIL AND METHODS FOR THE ASSEMBLY AND USE THEREOF - A breakaway support post for a guardrail includes an upper post member and a lower post member. The upper and lower post members are overlapping and configured such that the upper and lower post members are non-rotatable relative to each other about an axis extending in an axial impact direction. In one embodiment, a tensile fastener extends in the axial impact direction and connects overlapping portions of the upper and lower post members. In another embodiment, a shear fastener extends transversely to the axial impact direction and is the only connection between the upper and lower post members. In another aspect, a guardrail assembly includes first and second rail sections, with a deforming member deforming the first rail section as it moves relative to the second rail section. Methods of using and assembling a guardrail assembly are also provided. | 2010-09-30 |
20100243979 | Animal Proof Hooded Barrier, Related Enclosure Systems and Method of Maintaining an Animal Proof Domain - The invention encompasses a substantially animal-proof barrier (“APB”) that includes (a) two supports that are laterally spaced apart to define a substantially vertical plane there between; (b) fencing material that is attached to each of the supports and spans the defined substantially vertical plane to form a simple barrier that has a top edge, a bottom edge, a front surface and a back surface, wherein the simple barrier divides a domain into a first area and a second area; and (c) a hood having an inner surface, the hood originating from the top edge of the simple barrier. An angle formed by the inner surface of the hood and the front surface of the simple barrier measures about 10 degrees to about 80 degrees, such that a channel having a substantially V-shaped cross section is formed. | 2010-09-30 |
20100243980 | NONVOLATILE MEMORY DEVICE AND METHOD FOR MANUFACTURING NONVOLATILE MEMORY DEVICE - A nonvolatile memory device includes: a first interconnection extending in a first direction; a second interconnection extending in a second direction nonparallel to the first direction; and a memory layer placed between the first interconnection and the second interconnection and reversibly transitioning between a first state and a second state by a current supplied via the first interconnection and the second interconnection. A cross section parallel to the first and the second direction of the memory layer decreases toward the second interconnection. | 2010-09-30 |
20100243981 | Phase-change random access memory device - A phase-change random access memory device includes an isolation layer structure, an insulating interlayer, a spacer, a switching element and a phase-change material (PCM) layer. The isolation layer structure is in a trench on a substrate, defines an active region in the substrate, and has a recess at an upper portion thereof. The insulating interlayer has an opening partially exposing the active region and the isolation layer structure. The spacer is on a sidewall of the opening and fills the recess. The switching element is in the opening on the exposed active region. The PCM layer is electrically connected to the switching element. | 2010-09-30 |
20100243982 | VARIABLE RESISTANCE NON-VOLATILE MEMORY CELLS AND METHODS OF FABRICATING SAME - Methods of fabricating integrated circuit memory cells and integrated circuit memory cells are disclosed. An integrated circuit memory cell can be fabricated by forming an ohmic layer on an upper surface of a conductive structure and extending away from the structure along at least a portion of a sidewall of an opening in an insulation layer. An electrode layer is formed on the ohmic layer. A variable resistivity material is formed on the insulation layer and electrically connected to the electrode layer. | 2010-09-30 |
20100243983 | CONTROLLED LOCALIZED DEFECT PATHS FOR RESISTIVE MEMORIES - Controlled localized defect paths for resistive memories are described, including a method for forming controlled localized defect paths including forming a first electrode forming a metal oxide layer on the first electrode, masking the metal oxide to create exposed regions and concealed regions of a surface of the metal oxide, and altering the exposed regions of the metal oxide to create localized defect paths beneath the exposed regions. | 2010-09-30 |
20100243984 | Live bioelectronic cell gated nanodevice - This invention is directed toward a bioelectronic cell gated nanodevice. The bioelectronic cell gated nanodevice comprises a plurality of bioelectric cells deposited on a fiber of a nanodevice. The bioelectronic cells of the nanodevice act as a gate, allowing current to be transmitted when the bioelectronic cells are exposed to an actuating chemical. The present invention also provides methods for constructing such a device. | 2010-09-30 |
20100243985 | HIGH LIGHT-EXTRACTION EFFICIENCY LIGHT-EMITTING DIODE STRUCTURE - The present invention discloses a high light-extraction efficiency LED structure, wherein metallic pads and metallic mesh wires made of an aluminum-silver alloy are formed on an LED, whereby the high-reflectivity aluminum-silver alloy makes the light incident on the metallic pads and metallic mesh wires reflected once more or repeatedly and then emitted from the surface or lateral side of the LED, wherefore the present invention can decrease the light loss and increase the light-extraction efficiency. | 2010-09-30 |
20100243986 | HYBRID VERTICAL CAVITY LIGHT EMITTING SOURCES AND PROCESSES FOR FORMING THE SAME - Vertical cavity light emitting sources that utilize patterned membranes as reflectors are provided. The vertical cavity light emitting sources have a stacked structure that includes an active region disposed between an upper reflector and a lower reflector. The active region, upper reflector and lower reflector can be fabricated from single or multi-layered thin films of solid states materials (“membranes”) that can be separately processed and then stacked to form a vertical cavity light emitting source. | 2010-09-30 |
20100243987 | DEVICE OF LIGHT-EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A device of a light-emitting diode and a method for fabricating the same are provided. The LED device is made by forming a patterned epitaxial layer, a light-emitting structure, etc., on a substrate. In a subsequent process, the patterned epitaxial layer serves as a weakened structure, and can be automatically broken and a rough surface is thus formed. The weakened structure is formed with a specified height, and has pillar structures. The light-emitting structure is formed on the weakened structure. During a cooling process at room temperature, the weakened structure is automatically broken and a rough surface is thus formed. | 2010-09-30 |
20100243988 | Nitride semiconductor light-emitting chip, method of manufacture thereof, and semiconductor optical device - A nitride semiconductor light-emitting chip offers enhanced luminous efficacy as a result of an improved EL emission pattern. The nitride semiconductor laser chip (nitride semiconductor light-emitting chip) has a nitride semiconductor substrate having a principal growth plane, and nitride semiconductor layers grown on the principal growth plane of the nitride semiconductor substrate. The principal growth plane of the GaN substrate is a plane having off-angles in both the a- and c-axis directions relative to an m plane, and the off-angle in the a-axis direction is larger than the off-angle in the c-axis direction. | 2010-09-30 |
20100243989 | SEMICONDUCTOR DEVICE - A semiconductor device includes a substrate, a superlattice buffer layer that is formed on the substrate and is composed of first Al | 2010-09-30 |
20100243990 | NANOSENSORS - Electrical devices comprised of nanowires are described, along with methods of their manufacture and use. The nanowires can be nanotubes and nanowires. The surface of the nanowires may be selectively functionalized. Nanodetector devices are described. | 2010-09-30 |
20100243991 | LIGHT EMITTING SYSTEM AND METHODS FOR CONTROLLING NANOCRYSTAL DISTRIBUTION THEREIN - A light emitting system includes a polymer mixture, and a plurality of nanocrystals occupying a predetermined portion of the polymer mixture. The polymer mixture includes at least two polymers that phase-segregate. Method(s) for controlling nanocrystal distribution within the light emitting device are also disclosed. | 2010-09-30 |
20100243992 | ORGANIC ELECTROLUMINESCENCE DEVICE - [Problem to be Solved by the Invention] An organic electroluminescence device having a longer drive life is provided. | 2010-09-30 |
20100243993 | ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR - An organic thin film transistor including a substrate having thereon at least three terminals of a gate electrode, a source electrode and a drain electrode, an insulator layer and an organic semiconductor layer, with a current between a source and a drain being controlled upon application of a voltage to the gate electrode, wherein the organic semiconductor layer includes a specified organic compound having an aromatic heterocyclic group in the center thereof; and an organic thin film light emitting transistor utilizing an organic thin film transistor, wherein the organic thin film transistor is one in which light emission is obtained utilizing a current flowing between the source and the drain, and the light emission is controlled upon application of a voltage to the gate electrode, and is made high with respect to the response speed and has a large ON/OFF ratio, are provided. | 2010-09-30 |
20100243994 | TRANSPARENT NONVOLATILE MEMORY THIN FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process. | 2010-09-30 |
20100243995 | ORGANIC SEMICONDUCTOR TRANSISTOR, METHOD OF PRODUCING THE SAME, AND ELECTRONIC DEVICE - An organic semiconductor transistor has plural electrodes and an organic semiconductor layer containing at least one compound represented by the following Formula (I). In Formula (I), each R | 2010-09-30 |
20100243996 | Optical device having solvate and manufacturing method thereof - The present invention discloses a manufacturing method for an optical device having a solvate, comprising the following steps: providing a substrate, depositing a solute on the substrate, and placing the substrate in the vapor environment of a solvent such that the solvent and the solute on the substrate form a solvate exhibiting optical properties. Furthermore, the present invention provides an optical device having a solvate, which modulates the photoluminescence (PL) intensity of the optical device via the solvate. The optical device is obtained by means of the above-described manufacturing method. | 2010-09-30 |
20100243997 | ORGANIC ELECTROLUMINESCENCE DEVICE AND ITS MANUFACTURING METHOD - An organic electroluminescence device includes: a first electrode layer; an insulating film arranged on the first electrode layer; an organic layer that is arranged on the insulating film, and is in contact with the first electrode layer at an opening portion provided in the insulating film; a second electrode layer arranged on the organic layer; and a metal layer that is in contact with an end surface of the organic layer and an end surface of the second electrode layer, and is arranged on the second electrode layer. | 2010-09-30 |
20100243998 | SEMICONDUCTOR MATERIAL AND ORGANIC RECTIFIER DIODE - A semiconductor material and an organic rectifier diode can be used for organic-based RFID (Radio Frequency Identification) tags. The semiconducting material for an organic diode has a metal complex as a p-dopant for doping a hole-conducting organic matrix material, wherein the metal complex is a metal complex with Lewis acid properties, which acts as an electron pair acceptor. | 2010-09-30 |
20100243999 | ORGANIC ELECTRONIC DEVICE, ORGANIC ELECTRONIC DEVICE MANUFACTURING METHOD, ORGANIC ELECTRONIC DEVICE MANUFACTURING APPARATUS, SUBSTRATE PROCESSING SYSTEM, PROTECTION FILM STRUCTURE AND STORAGE MEDIUM WITH CONTROL PROGRAM STORED THEREIN - An organic element is protected by a protection film which has high sealing performance while relaxing a stress and does not change the characteristics of the organic element. In a substrate processing system Sys, a substrate processing apparatus | 2010-09-30 |
20100244000 | ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM LIGHT-EMITTING TRANSISTOR - The present invention aims to provide an organic thin film transistor that is superior in stability in the atmosphere and that has a high operation speed. The organic thin film transistor according to the present invention includes three kinds of terminals consisting of a gate electrode, a source electrode, and a drain electrode, an insulator layer that insulates the gate electrode from the source electrode and from the drain electrode, and an organic semiconductor layer; the terminals, the insulator layer, and the organic semiconductor layer being disposed on a substrate; the organic thin film transistor controlling a source-to-drain electric current by a voltage applied to the gate electrode, and the organic thin film transistor is characterized by further including a crystallinity control layer that is formed from a crystalline compound that controls crystallinity of the organic semiconductor layer, and is characterized in that the organic semiconductor layer is formed on the crystallinity control layer and contains a compound having heterocyclic groups or a compound having a quinone structure. The organic thin film light-emitting transistor according to the present invention is characterized in that either one of the source electrode and the drain electrode of the organic thin film transistor is formed of a hole-injecting electrode, and the other electrode is formed of an electron-injecting electrode. | 2010-09-30 |
20100244001 | MEGAHERTZ ORGANIC/POLYMER DIODES AND METHODS RELATED THERETO - Featured is an organic/polymer diode having a first layer composed essentially of one of an organic semiconductor material or a polymeric semiconductor material and a second layer formed on the first layer and being electrically coupled to the first layer such that current flows through the layers in one direction when a voltage is applied in one direction. The second layer is essentially composed of a material whose characteristics and properties are such that when formed on the first layer, the diode is capable of high frequency rectifications on the order of megahertz rectifications such as for example rectifications at one of above 100 KHz, 500 KhZ, IMHz, or 10 MHz. In further embodiments, the layers are arranged so as to be exposed to atmosphere. | 2010-09-30 |
20100244002 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting diode includes an anode and a cathode separately arranged from each other, and an emission layer between the anode and the cathode, the emission layer including a single host material and a light-emitting material, the emission layer including, when the host material has a hole transport property, a doped region on a cathode side to which an electron transport material is doped and an undoped region on an anode side to which an electron transport material is not doped, or the emission layer including, when the host material has an electron transport property, a doped region on an anode side to which a hole transport material is doped and an undoped region on a cathode side to which a hole transport material is not doped. | 2010-09-30 |
20100244003 | Semiconductor Device and Light-Emitting Device - The present invention provides a semiconductor device by which a light-emitting device that is unlikely to cause defects such as a short circuit, can be manufactured. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, a part of the electrode is exposed by the opening portion of the partition layer. One feature of a semiconductor device of the present invention is to include an electrode that serves as an electrode of a light-emitting element and a transistor. The electrode and the transistor are connected electrically to each other. The electrode includes a first layer and a second layer. Further, end portions of the electrode are covered with a partition layer having an opening portion. Moreover, the second layer is exposed by the opening portion of the partition layer. | 2010-09-30 |
20100244004 | HETEROLEPTIC IRIDIUM COMPLEX - Novel compounds comprising heteroleptic iridium complexes are provided. The compounds have a particular combination of ligands which includes a single pyridyl dibenzo-substituted ligand. The compounds may be used in organic light emitting devices, particularly as emitting dopants, to provide devices having improved efficiency, lifetime, and manufacturing. | 2010-09-30 |
20100244005 | ORGANIC EL APPARATUS, METHOD OF MANUFACTURING ORGANIC EL APPARATUS, ELECTRONIC APPARATUS - Provided is an organic EL apparatus including: an organic EL panel including organic EL devices; a heat releasing member; and a pair of film sheets of which at least one is transparent, wherein the organic EL panel and the heat releasing member overlap and are interposed and encapsulated by the pair of film sheets in a state where a portion of the heat releasing member is exposed outside the pair of film sheets. | 2010-09-30 |
20100244006 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device is provided and includes: a cathode; an anode; and at least one organic layer between the cathode and the anode. The at least one organic layer includes a light emitting layer containing at least one light emitting material. A compound represented by the following formula (I) is contained in the at least one organic layer. | 2010-09-30 |
20100244007 | ORGANIC ELECTROLUMINESCENT ELEMENT - The present invention provides a white organic electroluminescent element which can emits white light and is free from deviation of chromaticity. This organic electroluminescent element comprises a substrate and, provided on the substrate, at least an anode, a cathode, and a light emitting layer held between the anode and the cathode. This organic electroluminescent element is characterized in that the light emitting layer contains at least three types of light emitting materials different from each other in X max, and the absolute value of HOMO level of the light emitting material having the shortest wavelength is smaller than the absolute value of HOMO level of the other light emitting materials. | 2010-09-30 |
20100244008 | COMPOUND AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME - The present invention provides a novel compound that is capable of largely improving lifespan, efficiency, electrochemical stability and thermal stability of the organic light emitting device, and an organic light emitting device in which the compound is included in an organic compound layer. | 2010-09-30 |
20100244009 | ORGANIC ELECTROLUMINESCENT DEVICES COMPRISING AZOMETHINE-METAL COMPLEXES - The present invention relates to phosphorescent organic electroluminescent devices which contain as a matrix material of emitting layer, metal complexes of the formula (I) | 2010-09-30 |
20100244010 | ORGANIC EL DEVICE, COLOR FILTER, AND ORGANIC EL DISPLAY - An organic EL device includes an organic EL emitter ( | 2010-09-30 |
20100244011 | ORGANIC EL DEVICE, COLOR FILTER, AND ORGANIC EL DISPLAY - An organic EL device includes an organic EL emitter ( | 2010-09-30 |
20100244012 | Naphthyl-substituted anthracene derivatives and their use in organic light-emitting diodes - The present invention relates to anthracene derivative compounds represented by Formula I: | 2010-09-30 |
20100244013 | COMPOUND FOR ORGANIC ELECTROLUMINESCENT DEVICE AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - Disclosed is an organic electroluminescent device (organic EL device) which is improved in luminous efficiency, fully secured of driving stability, and of simple constitution. Also disclosed is a compound useful for the fabrication of said organic electroluminescent device. This compound for organic electroluminescent device is a bipyrimidyl compound which has a basic skeleton of 2,2′-bipyrimidyl and is substituted by an aromatic hydrocarbon group, an aromatic heterocyclic group, or a substituted amino group. The aforementioned organic electroluminescent device has a light-emitting layer between an anode and a cathode which are piled one upon another on a substrate and the light-emitting layer contains a phosphorescent dopant and the aforementioned bipyrimidyl compound as a host material. | 2010-09-30 |
20100244014 | ELECTROLUMINESCENT METAL COMPLEXES WITH TRIAZOLES AND BENZOTRIAZOLES - This invention relates to electroluminescent metal complexes with triazoles and benzotriazoles, respectively of the formula | 2010-09-30 |
20100244015 | ORGANIC SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SAME, ORGANIC TRANSISTOR ARRAY, AND DISPLAY - A major object of the present invention is to provide an organic semiconductor device which is provided with an organic semiconductor transistor having good transistor performance and is producible with high productivity. To achieve the object, the present invention provides an organic semiconductor device comprising: a substrate; a source electrode and a drain electrode which are formed on the substrate; an insulation partitioned part which is formed on the source electrode and the drain electrode, made of an insulation material, formed such that an opening part of the insulation partitioned part is disposed above a channel region formed by the source electrode and the drain electrode and has a function as an interlayer-insulation layer; an organic semiconductor layer which is formed in the opening part of the insulation partitioned part and on the source electrode and the drain electrode, and made of an organic semiconductor material; a gate insulation layer which is formed on the organic semiconductor layer and made of an insulation resin material; and a gate electrode formed on the gate insulation layer, wherein; the insulation partitioned part has a height ranging from 0.1 μm to 1.5 μm. | 2010-09-30 |
20100244016 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - In a manufacturing method of a display substrate according to one or more embodiments, a plurality of thin films are patterned by using a photoresist film pattern having different thicknesses in each area on a substrate as etch masks. The photoresist film pattern may be etch-backed at least twice during the manufacturing process of the display substrate and may be used as the etch mask for patterns having shapes different from each other. Accordingly, the number of processes for manufacturing the mask patterns, which may be formed by a photolithography method in order to pattern the thin films formed on the substrate, may be reduced. | 2010-09-30 |
20100244017 | THIN-FILM TRANSISTOR (TFT) WITH AN EXTENDED OXIDE CHANNEL - In at least some embodiments, a thin-film transistor (TFT) includes a gate electrode and a gate dielectric adjacent the gate electrode. The TFT also includes a source electrode at least partially aligned with the gate electrode and separated from the gate electrode by the gate dielectric. The TFT also includes a drain electrode laterally offset from the gate electrode by at least 2 μm and separated from the gate electrode by the gate dielectric. The TFT also includes an extended oxide channel between the source electrode and the drain electrode, wherein a portion of the extended oxide channel is ungated. | 2010-09-30 |
20100244018 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A object is to provide a semiconductor device having normally-off characteristics and capable of easily suppressing field concentration below a side surface of a concave portion. A device includes a nitride-based semiconductor layer having a concave portion formed in a part of one principal surface, a side surface of the concave portion being slanted; a first electrode provided on the principal surface; a second electrode on an opposite side to the first electrode across the concave portion, and provided on the principal surface; an insulating layer formed on both sides of the concave portion in the principal surface; and | 2010-09-30 |
20100244019 | Metal Oxide Semiconductor Films, Structures and Methods - Materials and structures for improving the performance of semiconductor devices include ZnBeO alloy materials, ZnCdOSe alloy materials, ZnBeO alloy materials that may contain Mg for lattice matching purposes, and BeO material. The atomic fraction x of Be in the ZnBeO alloy system, namely, Zn | 2010-09-30 |
20100244020 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object of an embodiment of the present invention is to provide a semiconductor device provided with a thin film transistor which includes an oxide semiconductor layer and has high electric characteristics. The semiconductor device includes a gate electrode over an insulating surface, an oxide semiconductor layer including silicon oxide, an insulating layer between the gate electrode and the oxide semiconductor layer, and source and drain regions between the oxide semiconductor layer including silicon oxide and source and drain electrode layers. The source and drain regions are formed using a degenerate oxide semiconductor material or a degenerate oxynitride material. | 2010-09-30 |
20100244021 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPLIANCE - To reduce adverse effects on actual operation and to reduce adverse effects of noise. A structure including an electrode, a wiring electrically connected to the electrode, an oxide semiconductor layer overlapping with the electrode in a plane view, an insulating layer provided between the electrode and the oxide semiconductor layer in a cross-sectional view, and a functional circuit to which a signal is inputted from the electrode through the wiring and in which operation is controlled in accordance with the signal inputted. A capacitor is formed using an oxide semiconductor layer, an insulating layer, and a wiring or an electrode. | 2010-09-30 |
20100244022 | THIN FILM TRANSISTOR AND METHOD OF PRODUCING SAME - A first gate electrode ( | 2010-09-30 |
20100244023 | Programmable resistance memory - A rewritable nonvolatile memory includes a test cell that is dedicated to testing the storage characteristics of other, similar, storage cells formed within the same integrated circuit memory. The test cell may be share the same structure and composition as storage cells and may be positioned proximate storage cells. | 2010-09-30 |
20100244024 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH INTERPOSER AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing an interposer having device contacts, interconnect contacts, and test pads including the interconnect contacts along an interconnect perimeter region of the interposer, the device contacts at a device perimeter region of the interposer with the device perimeter region within the interior of the interconnect perimeter region, and the test pads at a test perimeter region of the interposer with the test perimeter region encompassing the device perimeter region; and mounting an integrated circuit over the device contacts. | 2010-09-30 |
20100244025 | ACTIVE DEVICE ARRAY SUBSTRATE AND LIQUID CRYSTAL DISPLAY PANEL - An active device array substrate, having at least a substrate, a first metal layer, an insulator layer, a second metal layer, a plurality of pixel electrodes and a plurality of active devices, is provided. The substrate has a display area and a narrow frame area. The first metal layer disposed on the substrate includes a plurality of first gate lines arranged laterally. The insulator layer is disposed on the first metal layer. The second metal layer disposed above an insulator layer includes a plurality of data lines and second gate lines arranged vertically. The first gate lines and the data lines divide the display area into a plurality of pixel areas. The second gate line disposed between the pixel areas is electrically connected to the first gate line. Each pixel electrode is electrically connected to the data line and the first gate line via each active array device. | 2010-09-30 |
20100244026 | ACTIVE DEVICE ARRAY SUBSTRATE - An active device array substrate is provided. The active device array substrate includes an active matrix device, first bonding pads electrically connected to the active matrix device, second bonding pads electrically insulated from the first bonding pads, test bonding pads disposed between the first and the second bonding pads and separated from the second bonding pads, switch devices disposed between the test bonding pads and the first bonding pads and electrically connected to the test bonding pads, a test signal pad, a switch device control pad, and at least one driving chip electrically connected to the first bonding pads, the second bonding pads, and the test bonding pads. Each test bonding pad is corresponding to one of the second bonding pads. Both the test signal pad for inputting/outputting a test signal and the switch device control pad for turning on/off the switch devices are electrically connected to the switch devices. | 2010-09-30 |
20100244027 | Semiconductor device and method of controlling the same - A semiconductor device includes a capacitor element that stores charge to perform as a memory that stores information. The capacitor may include, but is not limited to, an insulating layer, a first electrode, and a second electrode. The insulating layer includes metal oxide. The insulating layer has a high dielectric constant. The first electrode contacts with a first surface of the insulating layer. The first electrode is made of a first conductive material including at least one of precious metals and compounds thereof. The second electrode contacts with a second surface of the insulating layer. The second electrode is made of a second conductive material including at least one of metals and compounds thereof. The metals are different from the precious metals. The second conductive material is lower in work function than the first conductive material. The first electrode is lower in potential than the second electrode. | 2010-09-30 |
20100244028 | TEST SYSTEM AND METHOD OF REDUCING DAMAGE IN SEED LAYERS IN METALLIZATION SYSTEMS OF SEMICONDUCTOR DEVICES - During the formation of a complex metallization system, the influence of a manufacturing environment on sensitive barrier/seed material systems may be monitored or controlled by using an appropriate test pattern and applying an appropriate test strategy. For example, actual probe and reference substrates may be prepared and may be processed with and without exposure to the manufacturing environment of interest, thereby enabling an efficient evaluation of one or more parameters of the environment. Furthermore, an “optimized” manufacturing environment may be obtained on the basis of the test strategy disclosed herein. | 2010-09-30 |
20100244029 | SEMICONDUCTOR DEVICE - The threshold voltage is shifted in a negative or positive direction in some cases by an unspecified factor in a manufacturing process of the thin film transistor. If the amount of shift from 0 V is large, driving voltage is increased, which results in an increase in power consumption of a semiconductor device. Thus, a resin layer having good flatness is formed as a first protective insulating film covering the oxide semiconductor layer, and then a second protective insulating film is formed by a sputtering method or a plasma CVD method under a low power condition over the resin layer. Further, in order to adjust the threshold voltage to a desired value, gate electrodes are provided over and below an oxide semiconductor layer. | 2010-09-30 |
20100244030 | PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element includes, in the following order: a substrate; a lower electrode; a photoelectric conversion layer; and an upper electrode comprising a transparent electrode material, the photoelectric conversion element further includes a stress relieving layer provided between the upper electrode and the photoelectric conversion layer, and the stress relieving layer includes a crystal layer capable of relieving a stress of the transparent electrode material. | 2010-09-30 |
20100244031 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The drain voltage of a transistor is determined depending on the driving voltage of an element connected to the transistor. With downsizing of a transistor, intensity of the electric field concentrated in the drain region is increased, and hot carriers are easily generated. An object is to provide a transistor in which the electric field hardly concentrates in the drain region. Another object is to provide a display device including such a transistor. End portions of first and second wiring layers having high electrical conductivity do not overlap with a gate electrode layer, whereby concentration of an electric field in the vicinity of a first electrode layer and a second electrode layer is reduced; thus, generation of hot carriers is suppressed. In addition, one of the first and second electrode layers having higher resistivity than the first and second wiring layers is used as a drain electrode layer. | 2010-09-30 |
20100244032 | ALUMINUM-NICKEL ALLOY WIRING MATERIAL, DEVICE FOR A THIN FILM TRANSISTOR AND A THIN FILM TRANSISTOR SUBSTRATE USING THE SAME, AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR SUBSTRATE - An Aluminum-Nickel alloy wiring material includes Aluminum, Nickel, Cerium, and Boron. A thin film transistor includes the Aluminum-Nickel alloy wiring material. A sputtering target comprises Aluminum, Nickel, Cerium and Boron. A method of manufacturing a thin film transistor substrate comprises disposing a thin film transistor on a substrate, wherein the thin film transistor includes a wiring circuit layer comprising Aluminum, Nickel, Cerium, and Boron. The Nickel, Cerium and Boron satisfy the following inequalities; 0.5≦X≦5.0, 0.01≦Y≦1.0, and 0.01≦Z≦1.0, respectively, wherein X represents an atomic percentage of Nickel content, Y represents an atomic percentage of Cerium content, and Z represents an atomic percentage of Boron content. | 2010-09-30 |
20100244033 | OPTICAL SENSOR, METHOD OF MAKING THE SAME, AND DISPLAY PANEL HAVING OPTICAL SENSOR - An optical sensor, method of making the same, and a display panel having an optical sensor. The optical sensor includes a first electrode, a second electrode, a photosensitive silicon-rich dielectric layer, and a first interfacial silicon-rich dielectric layer. The photosensitive silicon-rich dielectric layer is disposed between the first and second electrodes. The first interfacial silicon-rich dielectric layer is disposed between the first electrode and the photosensitive silicon-rich dielectric layer. | 2010-09-30 |
20100244034 | THIN FILM TRANSISTOR - A thin film transistor includes a gate electrode; a gate insulating layer which is provided to cover the gate electrode; a semiconductor layer which is provided over the gate insulating layer to overlap with the gate electrode; an impurity semiconductor layer which is partly provided over the semiconductor layer and which forms a source region and a drain region; and a wiring layer which is provided over the impurity semiconductor layer, where a width of the source region and the drain region is narrower than a width of the semiconductor layer, and where the width of the semiconductor layer is increased at least in a portion between the source region and the drain region. | 2010-09-30 |
20100244035 | DISPLAY PANEL AND METHOD OF FORMING THEREOF - A panel a gate line on a first substrate, a gate insulating layer covering the gate line, a semiconductor layer on the gate insulating layer, a data line intersecting the gate line and including a source electrode and a drain electrode facing the source electrode on the semiconductor layer, a connection assistant separated from the data line, a passivation layer covering the semiconductor layer and including contact holes exposing the connection assistant and a pixel electrode including a plurality of sub-pixel electrodes and formed on the passivation layer. The sub-pixel electrodes are connected to the connection assistant through the contact holes, are electrically connected to each other through the connection assistant and at least one of the sub-pixel electrodes is electrically connected to the drain electrode. | 2010-09-30 |
20100244036 | THIN FILM TRANSISTOR, METHOD OF FABRICATING THE SAME AND ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE INCLUDING THE SAME - A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions. | 2010-09-30 |
20100244037 | THIN FILM TRANSISTOR, ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY PANEL AND ELECTRONIC DEVICE USING SAME - A thin film transistor (TFT) is provided which is capable of reducing leakage currents in a polycrystalline silicon TFT without causing an increase in manufacturing processes. Source/drain regions of an activated layer of the TFT to be formed in a circuit region and pixel region formed on a glass substrate of a liquid crystal display panel for a mobile phone is formed so that its boron impurity falls within a range of 2.5×10 | 2010-09-30 |
20100244038 | THIN FILM TRANSISTOR AND FABRICATING METHOD OF THE SAME - Provided are thin film transistor, a method of fabricating the same, a flat panel display device including the same, and a method of fabricating the flat panel display device, that are capable of applying an electric field to a gate line to form a channel region of a semiconductor layer of a thin film transistor using a polysilicon layer crystallized by a high temperature heat generated by Joule heating of a conductive layer. As a result, a process can be simplified using a gate line included in the thin film transistor as the conductive layer, and the channel region of the semiconductor layer can be formed of polysilicon having a uniform degree of crystallinity. The thin film transistor includes a straight gate line disposed in one direction, a semiconductor layer crossing the gate line, and source and drain electrodes connected to source and drain regions of the semiconductor layer. | 2010-09-30 |
20100244039 | PIXEL STRUCTURE - A pixel structure includes a patterned semiconductor layer disposed on a transistor region of the substrate, a first capacitor electrode disposed on a capacitor region of the substrate, a gate dielectric layer disposed on the first capacitor electrode, a gate disposed on a channel region of the patterned semiconductor layer, a second capacitor electrode, a dielectric layer, and an aluminum capacitor electrode sequentially disposed on the gate dielectric layer of the capacitor region, a first dielectric layer disposed on the gate and the aluminum capacitor electrode, at least one first wire disposed in the first dielectric layer for electrically connecting source/drain region of the patterned semiconductor layer and the aluminum capacitor electrode, a second dielectric layer disposed on the first wire, and a first transparent conductive layer disposed on the second dielectric layer and connected to the first wire. | 2010-09-30 |
20100244040 | GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, METHOD OF MANUFACTURING GROUP-III NITRIDE COMPOUND SEMICONDUCTOR LIGHT-EMITTING DEVICE, AND LAMP - A group-III nitride compound semiconductor light-emitting device, a method of manufacturing the group-III nitride compound semiconductor light-emitting device, and a lamp. The method includes the steps of: forming an intermediate layer ( | 2010-09-30 |
20100244041 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An isolation layer for suppressing a leakage current is provided at least between a channel layer and a buffer layer formed under the channel layer in the buffer layer. | 2010-09-30 |
20100244042 | Group III nitride compound semiconductor light emitting element and manufacturing method thereof - A group III nitride compound semiconductor light emitting element comprising: a first layer which is a single crystal layer of a group III nitride compound semiconductor, the first layer formed on the buffer layer and including a threading dislocation; a second layer of a group III nitride compound semiconductor formed on the first layer, the second layer including a pit and a flat portion, wherein the pit continuing from the threading dislocations and having a cross section parallel to the substrate expanding in a growth direction of the second layer; a luminescent layer including a flat portion and a pit corresponding to those of the second layer. The indium concentration in the pit of the luminescent layer is smaller than that in the flat portion of the luminescent layer. A luminescent spectrum width of thereof is expanded as compared to a case where the pit does not exist. | 2010-09-30 |
20100244043 | ELECTRICAL DEVICES HAVING IMPROVED TRANSFER CHARACTERISTICS AND METHOD FOR TAILORING THE TRANSFER CHARACTERISTICS OF AN ELECTRICAL DEVICE - The invention concerns about electrical devices having improved transfer characteristics and a corresponding method of tailoring the transfer characteristics of such electrical devices. According to one aspect of the invention, there is provided an electrical device including at least two transistor segments or at least two transistors connected in parallel or in series characterized in that the at least two segments of the transistor or the at least two of the transistors have a different single transfer characteristic due to at least one of different topology and different material properties. | 2010-09-30 |
20100244044 | GaN-BASED FIELD EFFECT TRANSISTOR - The invention provides a GaN-based compound semiconductor device that is operable with low ON-resistance and high withstanding voltage. The GaN-based field effect transistor includes a buffer layer formed on a substrate, a channel layer, a drift layer formed on the channel layer, source and drain electrodes formed on the drift layer, an insulating film formed on the inner surface of a recess form in the drift layer and on the surface of the drift layer and a gate electrode formed on the insulating film and having a field plate portion. The drift layer has a reducing surface field region composed of n-type GaN-based compound semiconductor whose sheet carrier density is more than 5×10 | 2010-09-30 |
20100244045 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes a first semiconductor layer which is formed above a substrate, a Schottky electrode and an ohmic electrode which are formed on the first semiconductor layer to be spaced from each other and a second semiconductor layer which is formed to cover the first semiconductor layer with the Schottky electrode and the ohmic electrode exposed. The second semiconductor layer has a larger band gap than that of the first semiconductor layer. | 2010-09-30 |
20100244046 | NITRIDE SEMICONDUCTOR DEVICE - On a processed substrate having an engraved region as a depressed portion formed thereon, a nitride semiconductor thin film is laid. The sectional area occupied by the nitride semiconductor thin film filling the depressed portion is 0.8 times the sectional area of the depressed portion or less. | 2010-09-30 |
20100244047 | Methods of Forming Semiconductor Devices Including Epitaxial Layers and Related Structures - A method of forming a semiconductor device may include forming a terminal region of a first conductivity type within a semiconductor layer of the first conductivity type. A well region of a second conductivity type may be formed within the semiconductor layer wherein the well region is adjacent at least portions of the terminal region within the semiconductor layer, a depth of the well region into the semiconductor layer may be greater than a depth of the terminal region into the semiconductor layer, and the first and second conductivity types may be different. An epitaxial semiconductor layer may be formed on the semiconductor layer, and a terminal contact region of the first conductivity type may be formed in the epitaxial semiconductor layer with the terminal contact region providing electrical contact with the terminal region. In addition, an ohmic contact may be formed on the terminal contact region. Related structures are also discussed. | 2010-09-30 |