38th week of 2010 patent applcation highlights part 14 |
Patent application number | Title | Published |
20100237260 | Ion implantation systems - An ion implantation apparatus of high energy is disclosed in this invention. The new and improved system can have a wide range of ion beam energy at high beam transmission rates and flexible operation modes for different ion species. This high energy implantation system can be converted into a medium current by removing RF linear ion acceleration unit. | 2010-09-23 |
20100237261 | CHARGED PARTICLE BEAM WRITING APPARATUS - A blanking deflector | 2010-09-23 |
20100237262 | ELECTRON BEAM WRITING METHOD AND APPARATUS - When performing pattern writing by emitting an electron beam, a fixed frequency component, which is a component of a variation in an encoder signal from the encoder in one rotation of the rotation stage that commonly appears in a plurality of different rotational speeds of the rotation stage, is compensated for by deflection correcting the electron beam in a circumferential direction, and a variable frequency component, which is a component of the variation in the encoder signal other than the fixed frequency component, is compensated for by changing the clock frequency of a write clock. | 2010-09-23 |
20100237263 | Dual Mode Portable Lighting System - The present invention is a portable lighting system comprised of a light head with visible white light and infrared light sources mounted on the center post of a quadpod. The quadpod has four adjustable, telescoping legs which are affixed to the center post using a collar mechanism. The collar mechanism allows the quadpod legs to be pivoted to a parallel position for storage. A power unit, which includes a battery, power supply and remote control receiver encased within a weather resistant housing, is located near the opposite end of the center post. A power cable connects the light head and the power unit. The portable lighting system is capable of being operating wirelessly using a handheld remote. The portable lighting system may be constructed from fiberglass, aluminum, a composite material or any other material or combination of materials. | 2010-09-23 |
20100237264 | Valve operating mechanism - In a valve operating mechanism of an internal combustion engine, with an actuation device including at least two shifting elements which are driven by actuators for engaging a shifting gate of a cam control element, a safety device is provided to prevent the shifting elements from being deployed simultaneously. | 2010-09-23 |
20100237265 | REMOTE CONTROL FLUID REGULATION SYSTEM - A fluid regulation system comprising a fluid source and a tube operatively connected to the source configured to deliver the fluid from the source to a site. A valve is configured to control a rate of fluid delivered from the source to the site via the tube, and a remote control unit is configured to enable a user to control the valve to adjust the rate of fluid delivered from the source to the site. | 2010-09-23 |
20100237266 | METHOD FOR CONTROLLING A SOLENOID VALVE OF A QUANTITY CONTROLLER IN AN INTERNAL COMBUSTION ENGINE - A method for controlling a fuel injection system ( | 2010-09-23 |
20100237267 | Rotor Configuration for a Rotary Valve - A rotary valve for metering the flow of particulate material from a supply source into the air stream of a pneumatic conveying system includes a central rotor manufactured through a precision casting process. The rotor is formed with a plurality of radially extending vanes terminating in tips that are flared circumferentially into the leading side of the vane to provide a flared vane tip that is preferably at least twice the thickness of the vane itself. The valve housing is formed with an elongated release port that has an overall length approximately equal to the length of the pockets formed between adjacent vanes to provide a more complete release of pressurized air from the pocket after the particulate material has been dropped into the pneumatic conveying system. The angled leading edge of the flared tips provides a less aggressive engagement with the particulate material to reduce damage thereto. | 2010-09-23 |
20100237268 | SHAFT CONNECTION BETWEEN TWO SHAFTS - A shaft connection is provided between a first shaft and a second shaft, the first shaft having a longitudinal axis about which the first shaft can be rotated. The first shaft has a free end which engages into a coupling part which can be connected in a rotationally fixed manner to the second shaft. The free end of the first shaft is provided with an external profile which engages releasably into an internal profile of the coupling part. The external profile and/or the internal profile are/is configured in each case as a dihedron with two side surfaces which extend substantially parallel to one another. At least one side surface of the external profile and/or one side surface of the internal profile are/is configured in a convex manner in the longitudinal direction of the first shaft and/or the second shaft. | 2010-09-23 |
20100237269 | VALVE DEVICE - An object of the invention for a valve device having an inclined valve body is to suppress pressure loss at a valve opened condition to a smaller amount. The valve body is composed of a disc shaped valve member for closing a fluid passage, a first supporting portion provided at an outer periphery of the valve member and connected to a first shaft member, and a second supporting portion provided at another outer periphery of the valve member and connected to a second shaft member. The valve body is formed of a press-molded metal plate and forms a Z-shape when viewed in a direction parallel to a surface of the valve member. | 2010-09-23 |
20100237270 | EXPANSION VALVE - An expansion valve for reducing the quantity of material required for the valve body by contriving the arrangement of bolt fitting grooves. In the expansion valve ( | 2010-09-23 |
20100237271 | POLYAMIDE MOULDING COMPOUND, ESPECIALLY FOR PRODUCING MOULDED PARTS FOR DRINKING - The invention relates to a polyamide moulding compound consisting of the following constituents: (A) between 25 and 70 wt. % of an aliphatic polyamide selected from the group PA1010, PA1012, PA1014, PA1210, PA1212, PA1214, PA12 and PA11, or a mixture of at least two of said systems; (B) between 8 and 35 wt. % of a transparent polyamide selected from the group MACM9-36, MACM9-36/PACM9-36, MACMI/12, MACMI/MACMT/12, or a mixture of at least two of said systems; (C) between 10 and 60 wt. % of reinforcing materials; (D) between 0 and 30 wt. % of particulate and/or layered filling materials; and (E) between 0 and 5 wt. % of auxiliary materials and/or additives, the sum of the constituents (A)-(E) amounting to 100 wt. %. Fibres are used at least partially as reinforcing materials (C), the cross-sectional surface of the fibres being either circular or the dimensional ratio of the main cross-sectional axis to the secondary cross-sectional axis being below 2. The invention also relates to uses of such a polyamide moulding compound and components at least partially produced using such a polyamide moulding compound. | 2010-09-23 |
20100237272 | METHODS OF GROWING HETEROEPITAXIAL SINGLE CRYSTAL OR LARGE GRAINED SEMICONDUCTOR FILMS AND DEVICES THEREON - A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies. | 2010-09-23 |
20100237273 | OXIDE MAGNETIC MATERIAL AND SINTERED MAGNET - An oxide magnetic material according to the present invention is represented by the formula: (1−x)CaO.(x/2)R | 2010-09-23 |
20100237274 | LUBRICATING OIL COMPOSITION FOR COMPRESSION REFRIGERATOR HAVING TRACTION MECHANISM - The present invention provides a lubricating oil composition for a compression type refrigerator, containing a base oil having a kinematic viscosity of 2 to 1,000 mm | 2010-09-23 |
20100237275 | METHOD FOR PREPARING LITHIUM METAL PHOSPHATE - Disclosed is a method for preparing a lithium metal phosphate represented by the following Formula 1 by using a mixture of a metal (M) with a metal oxide containing the same metal: | 2010-09-23 |
20100237276 | ELECTROCHEMICAL COMPOSITION AND ASSOCIATED TECHNOLOGY - A composition including a first material and a metal or a metal oxide component for use in an electrochemical redox reaction is described. The first material is represented by a general formula M | 2010-09-23 |
20100237277 | NONAQUEOUS ELECTROLYTE BATTERY, BATTERY PACK AND POSITIVE ELECTRODE ACTIVE MATERIAL - A nonaqueous electrolyte battery includes a case, a positive electrode housed in the case and including a positive electrode active material containing a lithium-nickel composite oxide and at least one of lithium hydroxide and lithium oxide, the sum of lithium hydroxide and lithium oxide falling within not less than 0.1% to not more than 0.5% by weight based on the total amount of the positive electrode active material, a negative electrode housed in the case and capable of lithium intercalation-deintercalation, and a separator sandwiched between the positive electrode and the negative electrode and impregnated with a nonaqueous electrolyte containing γ-butyrolactone. | 2010-09-23 |
20100237278 | Non-aqueous liquid compositions comprising ion exchange polymers - Compositions, and methods of making thereof, comprising from about 1% to about 5% of a perfluorinated sulfonic acid ionomer or a hydrocarbon-based ionomer; and from about 95% to about 99% of a solvent, said solvent consisting essentially of a polyol; wherein said composition is substantially free of water and wherein said ionomer is uniformly dispersed in said solvent. | 2010-09-23 |
20100237279 | AZEOTROPE-LIKE COMPOSITIONS OF PENTAFLUOROPROPANE, CHLOROTRIFLUOROPROPENE, AND HYDROGEN FLUORIDE - The invention is directed to a ternary azeotrope-like mixture consisting essentially of effective amounts of 1,1,1,3,3-pentafluoropropane, 1-chloro-3,3,3-trifluoropropene, and hydrogen fluoride. | 2010-09-23 |
20100237280 | ORE REDUCTION PROCESS USING CARBON BASED MATERIALS HAVING A LOW SULFUR CONTENT AND TITANIUM OXIDE AND IRON METALLIZATION PRODUCT THEREFROM - The disclosure is directed to a process for producing separable iron and titanium oxides from an ore comprising titanium oxide and iron oxide, comprising: (a) forming agglomerates comprising carbon-based material and the ore, the quantity of carbon of the agglomerates being at least sufficient for forming a ferrous oxide-containing molten slag, at an elevated temperature; (b) introducing the agglomerates onto a bed of carbon-based material in a moving hearth furnace, wherein the carbon-based materials used for both the agglomerates and the bed have a low sulfur content; (c) heating the agglomerates in the moving hearth furnace to a temperature sufficient for liquefying the agglomerates to produce a liquid comprising ferrous oxide-containing slag; (d) metallizing the ferrous oxide of the slag by reaction of the ferrous oxide and the carbon of the carbon bed at a furnace temperature sufficient for maintaining the slag in a liquid state; (e) solidifying the slag after metallization of the ferrous oxide to form a matrix of titanium oxide-rich slag having a plurality of metallic iron granules distributed there through; and (f) separating the metallic iron granules from the slag, the slag comprising greater than 85% titanium dioxide based on the entire weight of the matrix after separation of the metallic iron. The disclosure is also directed to a metallization product of a ferrous oxide-rich molten slag. | 2010-09-23 |
20100237281 | Peroxide Gel Compositions - The present invention is the use of Poly(2-ethyl-2-oxazoline) in the creation of peroxide gels for various applications. Such applications include bleaching of hair, teeth, laundry or any other bleachable item. Blending of the gel is accomplished by mixing the Poly(2-ethyl-2-oxazoline) with a peroxide such as hydrogen peroxide, carbamide peroxide, sodium perborate, or sodium percarbonate, usually also with water or an appropriate organic solvent. Peroxide concentrations in these new gels can reach a 30% concentration of hydrogen peroxide while maintaining a shelf life of six months at room temperature without developing peroxide decomposition. | 2010-09-23 |
20100237282 | BLEACHING COMPOSITION - The present invention relates to a bleaching composition containing, in a specific ratio, (a) an alkali metal hypochlorite, (b) an amphoteric polymer compound having, as constituent units, (b1) a monomer unit having at least one member selected from a quaternary ammonium group, a tertiary amine group and a secondary amine group and (b2) a monomer unit having an anionic group, (c) a quaternary ammonium-based surfactant, and (d) water. | 2010-09-23 |
20100237283 | Oxygen Scavenging Composition - An oxygen-scavenging composition is provided that includes an oxygen-scavenging polymer and a catalyst. The oxygen-scavenging polymer, which in preferred embodiments is suitable for use in packaging articles, includes a base polymer having a backbone, and an unsaturated side chain attached to the backbone. In one embodiment, the side chain comprises an unsaturated fatty-acid. | 2010-09-23 |
20100237284 | LIQUID CRYSTALLINE POLYESTER RESIN COMPOSITION - The present invention provides a liquid crystalline polyester resin composition which imparts a good mold-releasability during molding and further is improved in heat resistance. Specifically, with 100 parts by weight of a liquid crystalline polyester resin is added 0.001 to 1 part by weight of a fatty acid ester which is a tetraester of pentaerythritol and a C10 to C32 higher fatty acid and has an acid value ranging from 0.01 to 0.5 and a hydroxyl value ranging from 0.01 to 5. | 2010-09-23 |
20100237285 | CYCLOHEXENE COMPOUNDS FOR LIQUID-CRYSTALLINE MIXTURES - The invention relates to liquid-crystalline compounds of the formula I | 2010-09-23 |
20100237286 | LIQUID CRYSTAL MIXTURE - A liquid crystal mixture includes 10 to 25 parts by weight of a first composition including at least one compound having the following formula (A) | 2010-09-23 |
20100237287 | PHOSPHOR, PHOSPHOR PASTE CONTAINING THE SAME, AND LIGHT-EMITTING DEVICE - Disclosed are a phosphor having high luminance, a phosphor paste containing the phosphor and a light-emitting device. The phosphor includes an oxide containing M | 2010-09-23 |
20100237288 | Nanowire Dispersion Compositions and Uses Thereof - Nanowire dispersion compositions (and uses thereof) are disclosed comprising a plurality of inorganic nanowires suspended in an aqueous or non-aqueous solution comprising at least one low molecular weight and/or low HLB (Hydrophile-Lipophile Balance) value dispersant. Methods of further improving the dispersability of a plurality of inorganic nanowires in an aqueous or non-aqueous solution comprise, for example, oxidizing the surface of the nanowires prior to dispersing the nanowires in the aqueous or non-aqueous solution. | 2010-09-23 |
20100237289 | Infectious waste treatment system and method - An infectious waste treatment system and method provided for treating waste material wherein the waste material is reduced and rendered decontaminated and unrecognizable thereby facilitating the disposal of infectious waste or potentially infectious waste materials. The treatment system is utilized for thermomechanically treating and processing all types of waste material. The treatment system includes a container processing unit in communication with a disinfection unit. The container processing unit is used to receive the waste materials in containerized form and convert the waste material into a usable medium for the disinfection unit. The disinfection unit comprises a system which drives a thermomechanical process wherein the waste material is rendered decontaminated and unrecognizable. The treatment system may be operated effectively without the presence of chemical disinfectants, steam, or radiation. In addition, the resulting product of the infectious waste treatment system and/or method may be used as a usable energy source in a separate process. | 2010-09-23 |
20100237290 | Method for Producing a Purified Synthesis Gas from a Biomass Including a Purification Step Upstream from the Partial Oxidation - The process that is the object of the invention describes a process whose purpose is to produce a purified synthesis gas from lignocellulosic biomass that includes a pyrolysis stage, a purification stage placed upstream from the partial oxidation stage, and a cooling stage. | 2010-09-23 |
20100237291 | SYSTEMS AND METHODS FOR SOLAR-THERMAL GASIFICATION OF BIOMASS - A method, apparatus, and system for a solar-driven chemical plant that may include a solar thermal receiver having a cavity with an inner wall, where the solar thermal receiver is aligned to absorb concentrated solar energy from one or more of 1) an array of heliostats, 2) solar concentrating dishes, and 3) any combination of the two. Some embodiments may include a solar-driven chemical reactor having multiple reactor tubes located inside the cavity of solar thermal receiver, wherein a chemical reaction driven by radiant heat occurs in the multiple reactor tubes, and wherein particles of biomass are gasified in the presence of a steam (H2O) carrier gas and methane (CH4) in a simultaneous steam reformation and steam biomass gasification reaction to produce reaction products that include hydrogen and carbon monoxide gas using the solar thermal energy from the absorbed concentrated solar energy in the multiple reactor tubes. | 2010-09-23 |
20100237292 | ISOCYANATE MODIFIED EPOXY RESIN AND EPOXY POWDER COATING COMPOSITION THEREOF - An epoxy resin composition comprises an isocyanate modified epoxy resin, which is a reaction product of (a) a multi-functional epoxy resin having an epoxy functionality of greater than about 2.2 and (b) a diisocyanate compound. An epoxy powder coating composition comprises the epoxy resin composition. The isocyanate modified epoxy resin has a high resin softening point and a high cross-linked glass transition temperature Tg for powder coating applications. | 2010-09-23 |
20100237293 | USE OF POLYAMIDE COMPOSITIONS FOR MAKING MOLDED ARTICLES HAVING IMPROVED ADHESION, MOLDED ARTICLES THEREOF AND METHODS FOR ADHERING SUCH MATERIALS - The present invention relates to encapsulated electrical/electronic devices and the use of polyamide compositions comprising at least one semi-aromatic polyamide and at least one aliphatic semi-aromatic polyamide, in particular, for encapsulating electrical/electronic devices. | 2010-09-23 |
20100237294 | Conductive polymer compound and organic photoelectric device including same - A conductive polymer compound includes: a conductive polymer; a first repeating unit represented by the following Chemical Formula 1; a second repeating unit represented by the following Chemical Formula 2; and a third repeating unit represented by the following Chemical Formula 3 and/or Chemical Formula 4, | 2010-09-23 |
20100237295 | MICROSPHERES AND THEIR METHODS OF PREPARATION - Carbon microspheres are doped with boron to enhance the electrical and physical properties of the microspheres. The boron-doped carbon microspheres are formed by a CVD process in which a catalyst, carbon source and boron source are evaporated, heated and deposited onto an inert substrate. | 2010-09-23 |
20100237296 | Reduction of graphene oxide to graphene in high boiling point solvents - A method of creating graphene comprising the steps of dispersing graphene oxide into water to form a dispersion. Where the method further comprises adding a solvent to the dispersion to form a solution, and controlling a temperature of the solution to form graphene. | 2010-09-23 |
20100237297 | POLYIMIDE POWDER FOR ANTISTATIC POLYIMIDE MOLDED PRODUCT AND POLYIMIDE MOLDED PRODUCT THEREBY - A polyimide powder for an antistatic polyimide molded product is disclosed. The polyimide powder comprises a polyimide-powder prepared from an aromatic tetracarboxylic acid component and a diamine component, and a conductive carbon black having a DBP oil absorption of 300 ml/100 g or more; wherein the amount of the conductive carbon black is within a range of 0.75 wt % to 5 wt % relative to the polyimide-powder. A polyimide molded product with sufficient antistatic property can be formed by molding the above polyimide powder. | 2010-09-23 |
20100237298 | NEW ELECTRODE MATERIALS DERIVED FROM POLYQUINONIC IONIC COMPOUNDS AND THEIR USE IN ELECTROCHEMICAL GENERATORS - The present invention is concerned with novel compounds derived from polyquinonic ionic compounds and their use in electrochemical generators. | 2010-09-23 |
20100237299 | Thermal barrier coating - A thermal barrier coating includes an infrared-reflection layer that is formed by coating on a substrate and contains a white pigment having a sunlight-reflection characteristic; and an infrared-transmittance layer that is formed by coating on a surface of the infrared-reflection layer and contains a black organic pigment that transmits infrared light. Infrared light that has been transmitted through the infrared-transmittance layer and reached the infrared-reflection layer is reflected outward by the infrared-reflection layer through the infrared-transmittance layer. The black organic pigment contained in the infrared-reflection layer is perylene black that transmits infrared light with a higher transmittance than for visible light. The infrared-reflection layer has a reflectivity of 40 percent or more against infrared light. | 2010-09-23 |
20100237300 | Leverage Tool for a Crank Assembly of a Radar System - An apparatus may comprise a lever operable to rotate a crank arm. The apparatus may further comprise a slotted member affixed to an end of the lever. The slotted member may be operable to clip around a first handle of the crank arm. The apparatus may further comprise an alignment member affixed to the lever. The alignment member may comprise a hole that receives a second handle of the crank arm. The apparatus may further comprise a third handle affixed to the lever such that a force applied to the third handle causes the lever to rotate. The rotation of the lever may cause the crank arm to rotate in a particular plane. The third handle may be offset from the particular plane. | 2010-09-23 |
20100237301 | Lever bar - An improved lever bar has an elongated shaft having two opposite distal ends. The first of the two opposite distal ends includes a crescent shaped portion having opposite end portions, both of the crescent opposite end portions respectively include flattened, clawed portions; and the second of the two opposite distal ends includes a flattened, pointed portion. | 2010-09-23 |
20100237302 | SIDE ANCHOR STRETCHER FOR FILIFORM ELEMENTS AND METHOD OF PRODUCTION OF SAID STRETCHER - An anchor stretcher device includes a wind up reel ( | 2010-09-23 |
20100237303 | Door jockey - The substance of this invention pertains to the subject of installing pedestrian entrance and exit doors in the construction industry. What's new about this invention is how doors can now be installed. The primary newness is the way that the vertical and horizontal adjustment is achieved, during the installation. | 2010-09-23 |
20100237304 | Kinematic Mount - A cable-wound drum style hoist with a rotating shaft supported by bearings that has both: (i) some freedom of motion in (at least) one of the bearings; and (ii) a pillow block in the shaft to impart some freedom of motion (beyond freedom to rotate about the central axis) in the shaft itself. By allowing some freedom of motion both the bearing(s) and the shaft, the hoist can better accommodate for bent shafts and/or slight misalignment of coaxial bearings. Also, a set of preferred connection hardware for mechanically connecting a hoist reducer box to a hoist backbone with preferred degrees of freedom/constraint. | 2010-09-23 |
20100237305 | Method of improving the functionality of pole mounted electrical producing or consuming panels - Current pole/mast mounted photovoltaic systems rely on gravity to lower the panel down the mast. The energy derived is typically conducted along a coiled conductor that expands or collapses like a spring inside the hollow mast as the movable device, with the solar panel attached, is raised or lowered for maintenance. Due to the large size and stiffness of the coiled conductor, especially in cold weather, the weight of the movable device may not be sufficient to cause the panel to descend when tension on the supporting cable is released. We have developed a method of pulling the sleeve/ring down the mast/pole as well as up. Over long periods of non-use, the sleeve can freeze in position. This new system aids in freeing it up and is also useful when there is un-even side loading on the sleeve. A winch driven chain or cable, attached to the movable device, extending upward to a top roller then internally downward to the winch and then externally extending back up to the movable device, accomplishes this task. A further improvement is a plurality of vertical guide wires and guides attached to the conductor coils that prevent the coils from overlapping in the collapsing mode. An additional improvement is taught wherein the coiled conductor is replaced by a set of conducting rails with a shorter conductor attached to the solar panel. | 2010-09-23 |
20100237306 | Hoist with Overspeed Protection - A hoist system with an overspeed detection sub-system for detecting overspeed by comparing an actual drum assembly speed with a target value. For example, the rotation of a motor may be determined by a first rotary encoder and the rotation of a drum may be determined by a second rotary encoder. The output of the first rotary encoder (the basis of a target value) is compared with the output of the second rotary encoder (corresponding to actual motion of the drum). If the difference between the target value and the actual motion is too large, then a problem, such as a broken hoist hardware component may exist, and appropriate remedial action is taken, such as braking the motor and/or the drum. | 2010-09-23 |
20100237307 | Modular solar fence system - Exemplary embodiments include a solar and non-solar fence slat designs for use in a modular fence system. The fence slat comprises an elongated slat body having a front side wall, a back side wall, bottom side wall, top side wall, right side wall and left side wall. The slat first and second fasteners coupled to right and left sides of the elongated slat body and being configured to couple or interlock with adjacent slats. The slat also includes at least one chain-link interface coupler coupled to the back side wall to connect to at least one horizontal cross-bar of a chain-link fence. In an embodiment, the fence slat has a solar panel integrated therewith. | 2010-09-23 |
20100237308 | Fence - This invention offers a fence, comprising vertical tubes, horizontal tubes joined with the vertical tubes, and integrated connectors for the join of the vertical tube and the horizontal tube. The interior of the horizontal tube is divided into an axial through hole and an axial embedded trough. An indented axial guiding notch is provided on the corresponding location of each interior wall of the embedded trough. The vertical tube is divided with a plurality of axial tube chambers. The integrated connector is made up of an insert piece and a slide piece, where both can be connected either in single-point pivot connection or into a single piece. The slide piece is provided with a protruded guiding bar corresponding to the guiding notch of the embedded trough. The single-piece type of the integrated connector will suit for the landforms where the vertical tube and the horizontal tube are perpendicular to each other. | 2010-09-23 |
20100237309 | Baluster Connection System - The various embodiments disclosed and pictured illustrate a baluster connection system for securing a baluster to a rail. The rail includes a channel formed therein, wherein the channel is defined by two opposing channel walls, a channel floor, and the interior surface of the rail top. Two opposing insert tabs may be affixed to each channel wall a predetermined distance from the rail top so that an insert may be placed between the insert tabs and the rail top. The insert includes apertures and baluster catches through which the second end of each baluster connector may pass in a first position of the insert. In a second position of the insert the baluster connector second end is secured within the channel. | 2010-09-23 |
20100237310 | Gate Bracket Systems and Methods - A bracket system for forming gate assemblies comprising at least two brace members that are rigidly attached to hinge assemblies. The brace members are adapted to be attached to support members to form two corners of a gate box functioning as the structural portion of the gate assembly. The hinge assemblies are adapted to be rigidly attached to a fence post to allow the gate assembly to pivot relative to the fence post. Gate assemblies of arbitrary height and width can be formed using the bracket system. | 2010-09-23 |
20100237311 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile memory device according to an embodiment of the present invention includes: a first wire embedded in a first wiring groove extending in an X direction formed in a first interlayer insulating film; a second interlayer insulating film formed above the first interlayer insulating film; a second wire embedded in a second wiring groove extending in a Y direction formed in the second interlayer insulating film; and a variable resistance memory cell including a variable resistive layer and a rectifying layer arranged to be held between the first wire and the second wire in a position where the first wire and the second wire intersect. A dimension in a plane perpendicular to a thickness direction of the variable resistance memory cell is specified by widths of the first and second wires. | 2010-09-23 |
20100237312 | Nonvolatile memory device - The nonvolatile memory device includes at least one pair of first electrode lines, at least one device structure disposed between the at least one pair of first electrode lines and a dielectric layer disposed between the at least one device structure and the at least one pair of first electrode lines. The at least one device structure includes a second electrode line including a first conductive type semiconductor, a resistance changing material layer adjacent to the second electrode line, a channel adjacent to the resistance changing material layer and including a second conductive type semiconductor different from the first conductive type semiconductor and a third electrode line adjacent to the channel and including the first conductive type semiconductor. | 2010-09-23 |
20100237313 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A nonvolatile semiconductor memory device of the present invention includes a substrate ( | 2010-09-23 |
20100237314 | RESISTANCE CHANGE TYPE MEMORY - A resistance change type memory of an aspect of the present invention including a first wiring configured to extend in a first direction, a second wiring configured to extend in a second direction crossing the first direction, a series circuit configured to connect to the first and second wirings, the series circuit including a non-ohmic element being more conductive in the first to second wiring direction than in the second to first direction and a resistance change type storage element in which data is stored according to a change of a resistance state, an energy supplying circuit configured to connect to the first wiring to supply energy to the first wiring, the energy being used to store the data in the resistance change type storage element, and a capacitance circuit configured to include a capacitive element and being connected to the second wiring. | 2010-09-23 |
20100237315 | Diode structures and resistive random access memory devices having the same - A diode structure includes: a lower electrode and an insulating layer disposed on the lower electrode. The insulating layer includes aperture exposing a portion of the lower electrode. The diode structure further includes: a first layer and a second layer. The first layer is disposed in the aperture and having a depressed portion. The second layer is disposed in the depressed portion of the first layer. A resistive random access memory (RRAM) device includes the above-described diode structure. | 2010-09-23 |
20100237316 | 4F2 SELF ALIGN SIDE WALL ACTIVE PHASE CHANGE MEMORY - Arrays of memory cells are described along with devices thereof and method for manufacturing. Memory cells described herein include self-aligned side wall memory members comprising an active programmable resistive material. In preferred embodiments the area of the memory cell is 4F | 2010-09-23 |
20100237317 | RESISTIVE RANDOM ACCESS MEMORY, NONVOLATILE MEMORY, AND METHOD OF MANUFACTURING RESISTIVE RANDOM ACCESS MEMORY - A resistive random access memory includes a lower electrode; a metal oxide film formed on the lower electrode and having a variable resistance, the metal oxide film having a first portion containing a metal element forming the metal oxide film and a second portion richer in oxygen than the first portion; and an upper electrode formed on the metal oxide film. | 2010-09-23 |
20100237318 | PHASE CHANGE MEMORY DEVICE USING CARBON NANOTUBE - Provided are a phase change memory device that can operate at low power and improve the scale of integration by reducing a contact area between a phase change material and a bottom electrode, and a method for fabricating the same. The phase change memory comprises a current source electrode, a phase change material layer, a plurality of carbon nanotube electrodes, and an insulation layer. The current source electrode supplies external current to a target. The phase change material layer is disposed to face the current source electrode in side direction. The carbon nanotube electrodes are disposed between the current source electrode and the phase change material layer. The insulation layer is formed outside the carbon nanotube electrodes and functions to reduce the loss of heat generated at the carbon nanotube electrodes. | 2010-09-23 |
20100237319 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - This nonvolatile semiconductor memory device comprises a memory cell array including memory cells arranged therein. Each of the memory cells is located at respective intersections between first wirings and second wirings and includes a variable resistance element. The variable resistance element comprises a thin film including carbon (C). The thin film includes a side surface along a direction of a current flowing in the memory cell. The side surface includes carbon nitride (CN | 2010-09-23 |
20100237320 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A nonvolatile semiconductor memory device includes a memory cell array where a plurality of memory cell layers having a plurality of first and second wires which cross each other and a memory cell provided at each intersection of these first and second wires are laminated on top of each other, wherein the memory cells have a variable resistance element and a non-ohmic element laminated in the direction in which the memory cell layers are laminated and tapered in such a manner that the area in a cross section gradually becomes smaller from the bottom memory cell layer towards the top memory cell layer, and the variable resistance element and the non-ohmic element in the memory cells in a certain memory cell layer are laminated in the same order as the variable resistance element and the non-ohmic element of the memory cells in another memory cell layer. | 2010-09-23 |
20100237321 | SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device includes the first transistor having first and second source/drain diffusion regions positioned below a second bit line to sandwich the first word line therebetween, and the second source/drain diffusion region positioned between the first and second word lines and connected to a first bit line, a second transistor having second and third source/drain diffusion regions positioned below the second bit line to sandwich the second word line therebetween, a first resistive memory element formed below the second bit line above the first source/drain diffusion region, and having terminals connected to the second bit line and the first source/drain diffusion region, and a second resistive memory element formed below the second bit line above the third source/drain diffusion region, and having terminals connected to the second bit line and the third source/drain diffusion region. | 2010-09-23 |
20100237322 | LIGHT EMITTING DEVICE - A QD protecting material having high compatibility with a binder component in a luminescent layer. The luminescent layer contains, as a part of its chemical structure, a compound containing a moiety A having a sum atomic weight MA of 100 or more and quantum dots protected by a protecting material, the protecting material contains, as a part of its chemical structure, a linking group connected to a quantum dot surface and a moiety B that has a sum atomic weight MB of 100 or more, satisfies a relationship between MB and MA represented by |MA−MB|/MB (2, and satisfies the requirement that the sum atomic weight MB is larger than one-third of the molecular weight of the protecting material, and a solubility parameter SA of the moiety A and a solubility parameter SB of the moiety B satisfy a relationship represented by |SA (SB| (2. | 2010-09-23 |
20100237323 | ELECTROLUMINESCENT DEVICE - An electroluminescent device comprising a pair of electrodes, and an electroluminescent layer containing at least a luminescent layer, situated between the electrodes. The luminescent layer has a matrix material containing at least one organic compound, and quantum dots whose surfaces are protected by a protective material and that are dispersed in the matrix material. The protective material contains a first protective material. The absolute value of the ionization potential Ip(h), the absolute value of the electron affinity Ea(h), and the band gap Eg(h) of the first protective material, the absolute value of the ionization potential Ip(m), the absolute value of the electron affinity Ea(m), and the band gap Eg(m) of the organic compound, and the band gap Eg(q) of the quantum dots fulfill all of the conditions (A) to (C): (A) Ip(h)Ea(m)−0.1 eV, and (C) Eg(q)2010-09-23 | |
20100237324 | Semiconductor Switching Circuit Employing Quantum Dot Structures - A semiconductor circuit includes a plurality of semiconductor devices, each including a semiconductor islands having at least one electrical dopant atom and located on an insulator layer. Each semiconductor island is encapsulated by dielectric materials including at least one dielectric material portion. Conductive material portions, at least one of which abut two dielectric material portions that abut two distinct semiconductor islands, are located directly on the at least one dielectric material layer. At least one gate conductor is provided which overlies at least two semiconductor islands. Conduction across a dielectric material portion between a semiconductor island and a conductive material portion is effected by quantum tunneling. The conductive material portions and the at least one gate conductor are employed to form a semiconductor circuit having a low leakage current. A design structure for the semiconductor circuit is also provided. | 2010-09-23 |
20100237325 | Highly resolved, low noise, room-temperature coulomb-staircase and blockade up to 2.2V in isolated 50 micron long one dimensional necklace of 10 NM AU particles - Coulomb blockade in metal nanoparticles isolated by a tunneling barrier is considered to be a potential solution to low power, robust, high-speed electronic switching device operating at single-electron transport. However, the switching voltage equal to the threshold voltage to overcome coulomb blockade for these devices is typically in the 10 mV range and/or operating at currents well below 1 nA, which inhibits their application as a practical device. Theoretically, a one dimensional nanoparticle necklace is predicted to be an ideal structure to achieve higher switching voltages. The present invention provides a single-electron device composed of a necklace of about 5000 nanoparticles. The linear necklace is self-assembled by interfacial phenomena along a triple-phase line of fiber, a substrate and electrolyte containing nanoparticles. The I-V measurements on the system show both coulomb blockade and staircase, with high currents and high threshold voltage of 1-3 V. The present invention also provides methods for constructing such a device. | 2010-09-23 |
20100237326 | ORGANIC TRANSISTOR AND MANUFACTURING METHOD THEREOF - An organic transistor including a substrate | 2010-09-23 |
20100237327 | SMECTIC LIQUID CRYSTAL COMPOUND - According to the present invention, a liquid crystal semiconductor capable of exhibiting a highly ordered smectic phase at approximately room temperature, being used for formation of a smectic liquid crystal thin film that is stable at room temperature by a solution process, and showing excellent ambipolar charge-transporting properties, a thin film transistor comprising the same, and the like are provided. | 2010-09-23 |
20100237328 | BENZO[a]FLUORANTHENE COMPOUND AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME - There is provided a benzo[a]fluoranthene compound represented by the formula (I): | 2010-09-23 |
20100237329 | VINYL-BASED POLYMER WITH SILICON OR/AND TIN AND ORGANIC LIGHT EMISSION DIODE USING - Disclosed herein is a vinyl-based polymer with silicon and/or tin for an organic layer of an OLED. The polymer is soluble in an organic solvent and can emit fluorescent and phosphorescent light from red to blue wavelengths so as to be used for a host material of an organic light emitting layer in the OLED. | 2010-09-23 |
20100237330 | ORGANIC ELECTROLUMINESCENT COMPOUND AND ORGANIC LIGTH EMITTING DIODE USING THE SAME - The present invention relates to novel organic electroluminescent compounds and organic light emitting diodes comprising the same. Since the organic electrolumescent compounds according to the invention have good luminous efficiency and life property as an electroluminescent material, OLED's having very good operation lifetime can be produced. | 2010-09-23 |
20100237331 | ANODE FOR AN ORGANIC ELECTRONIC DEVICE - There is provided an anode for an organic electronic device. The anode is a conducting inorganic material having an oxidized surface layer. The surface layer is non-conductive and hole-transporting. | 2010-09-23 |
20100237332 | ORGANIC SEMICONDUCTOR TRANSISTOR - An organic semiconductor transistor has plural electrodes and an organic semiconductor layer including at least one compound represented by the following Formula (I). In Formula (I), each R is independently a hydrogen atom or an alkyl group; and n and m are each independently an integer of from 1 to 3. | 2010-09-23 |
20100237333 | ORGANIC COMPONENT VERTICALLY EMITTING WHITE LIGHT - The invention relates to an organic component emitting white light upward having an electrode ( | 2010-09-23 |
20100237334 | Benzo-Fused Thiophene or Bezon-Fused Furan Compounds Comprising a Triphenylene Group - Triphenylene containing benzo-fused thiophene compounds are provided. Additionally, triphenylene containing benzo-fused furan compounds are provided. The compounds may be useful in organic light emitting devices, particularly as hosts in the emissive layer of such devices, or as materials for enhancement layers in such devices, or both. | 2010-09-23 |
20100237335 | MULTICOLOR DISPLAY APPARATUS - In a multicolor display apparatus in which each of light emitting devices of three colors R, G and B has the same thickness from a reflection position of a reflection electrode to an organic emission layer, an organic emission layer of the R device and an organic emission layer of the B device each have electron transport property whereas an organic emission layer of the G device has hole transport property; and an optical distance (L) from the reflection position of the reflection electrode to an emission position of the organic emission layer in the light emitting devices of three colors satisfies 0.25×λR2010-09-23 | |
20100237336 | NANOTUBE ENABLED, GATE-VOLTAGE CONTROLLED LIGHT EMITTING DIODES - Embodiments of the invention relate to vertical field effect transistor that is a light emitting transistor. The light emitting transistor incorporates a gate electrode for providing a gate field, a first electrode comprising a dilute nanotube network for injecting a charge, a second electrode for injecting a complementary charge, and an electroluminescent semiconductor layer disposed intermediate the nanotube network and the electron injecting layer. The charge injection is modulated by the gate field. The holes and electrons, combine to form photons, thereby causing the electroluminescent semiconductor layer to emit visible light. In other embodiments of the invention a vertical field effect transistor that employs an electrode comprising a conductive material with a low density of states such that the transistors contact barrier modulation comprises barrier height lowering of the Schottky contact between the electrode with a low density of states and the adjacent semiconductor by a Fermi level shift. | 2010-09-23 |
20100237337 | ORGANIC TRANSISTOR AND METHOD FOR PRODUCING THE SAME - An organic transistor comprising: | 2010-09-23 |
20100237338 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, DISPLAY, AND ELECTRONIC APPARATUS - A light-emitting element includes a cathode; an anode; and a light-emitting section which is disposed between the cathode and the anode and which includes a first light-emitting layer, second light-emitting layer, and third light-emitting layer each containing a corresponding one of luminescent materials emitting light of different colors and host materials supporting the luminescent materials. The first, second, and third light-emitting layers commonly contain a first host material that is one of the host materials. The first light-emitting layer emits light of a first color having a longer wavelength as compared to light emitted from the second and third light-emitting layers and contains a second host material which is one of the host materials and which is different from the first host material. The second host material is superior in enhancing the luminescence of the first light-emitting layer to the first host material. | 2010-09-23 |
20100237339 | Carbazole Derivative with Heteroaromatic Ring, and Light-Emitting Element, Light-Emitting Device, and Electronic Device Using Carbazole Derivative with Heteroaromatic Ring - Disclosed is a carbazole derivative and a light-emitting element, a light-emitting device, and an electronic device using thereof. The carbazole derivative possesses an oxadiazole moiety or a quinoxaline moiety as a heteroaromatic ring having an electron-transporting property and a carbazole moiety having a hole-transporting property. The ability of the carbazole derivative to transport both electrons and holes and its large excitation energy larger than a triplet excitation energy of a phosphorescent compound allow the formation of a phosphorescent light-emitting element having well-controlled carrier balance, which contributes to the formation of light-emitting devices and electronic devices that are capable of being driven at a low voltage, have a long lifetime, and consume low power. The detailed structure of the carbazole derivative is defined in the specification. | 2010-09-23 |
20100237340 | DIODE EMPLOYING WITH CARBON NANOTUBE - A diode includes an organic composite plate, a first electrode and a second electrode. The organic composite plate includes a first portion, a second portion and a plurality of carbon nanotubes distributed therein. The carbon nanotubes in the first portion have a first band gap and the carbon nanotubes in the second portion have a second band gap. The first band gap and the second band gap are different from each other. The first electrode is electrically connected to the first portion. The second electrode electrically is connected to the second portion. | 2010-09-23 |
20100237341 | ORGANIC ELECTROLUMINESCENCE ELEMENT - An organic electroluminescence element having a cathode as a top electrode, and excelling in luminance efficiency, drive voltage, and operational life is provided. The organic electroluminescence element includes an anode over a substrate and a luminescent layer over the anode. The luminescent layer comprises an organic material. An electron injection layer is over the luminescent layer for injecting electrons into the luminescent layer. The electron injection layer is a metal including at least one of an alkaline metal and an alkaline earth metal. A fullerene layer is over the electron injection layer and includes fullerenes and at least one of an alkaline metal and an alkaline earth metal. The at least one of the alkaline metal and the alkaline earth metal included in the fullerene layer has a lower work function than a lowest unoccupied molecular orbit energy level of the fullerenes. A cathode is over the fullerene layer. | 2010-09-23 |
20100237342 | LIGHT EMITTING DEVICE - A triplet light emitting device which has high efficiency and improved stability and which can be fabricated by a simpler process is provided by simplifying the device structure and avoiding use of an unstable material. In a multilayer device structure using no hole blocking layer conventionally used in a triplet light emitting device, that is, a device structure in which on a substrate, there are formed an anode, a hole transporting layer constituted by a hole transporting material, an electron transporting and light emitting layer constituted by an electron transporting material and a dopant capable of triplet light emission, and a cathode, which are laminated in the stated order, the combination of the hole transporting material and the electron transporting material and the combination of the electron transporting material and the dopant material are optimized. | 2010-09-23 |
20100237343 | ZnO-BASED THIN FILM AND SEMICONDUCTOR DEVICE - Provided are a ZnO-based thin film which is inhibited from being doped with an unintentional impurity, and a semiconductor device. The ZnO-based thin film has a main surface: which is formed of Mg | 2010-09-23 |
20100237344 | CUBIC SEMICONDUCTOR ALLOYS FOR DEEP UV APPLICATIONS - A cubic epitaxial article and electronic devices therefrom includes a single crystal cubic oxide substrate having a substrate band gap and a top surface. An epitaxial cubic oxide alloy layer that includes at least one transition metal or group IIA metal disposed on the top surface of the substrate. The epitaxial cubic oxide alloy layer has a band gap that is different than the substrate band gap and has a lattice that is lattice matched within 5% to a lattice of the single crystal cubic oxide substrate. | 2010-09-23 |
20100237345 | WAFER AND MANUFACTURING METHOD OF ELECTRONIC COMPONENT - The present invention relates to a wafer formed with an evaluation element and capable of improving productivity and a manufacturing method of an electronic component using the same. In a wafer according to the present invention, a plurality of elements connected to electrode films through lead-out conductive films are arranged and a chip area is defined for cutting out the plurality of elements in a given number. In the wafer, at least one evaluation element is formed in an area outside the chip area. The lead-out conductive films extend to the outside area and are connected to the evaluation elements. With this wafer, since the lead-out conductor is shared between the element and the evaluation element, the electrode film connected therewith can be shared, too. Accordingly, evaluation can be performed by using the evaluation element without the need of providing the wafer with a lead-out conductor and an electrode film exclusively for the evaluation element, so that the chip area to be cut out from the wafer can be made larger than before. | 2010-09-23 |
20100237346 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A rectifier is formed by forming a first electrode layer, a semiconductor layer and a second electrode layer. A third electrode layer is formed between the first electrode layer and the semiconductor layer, or between the second electrode layer and the semiconductor layer. | 2010-09-23 |
20100237347 | Electronic Device Having Electrodes and Organic Active Regions and Processes of Forming the Same - An electronic device can include an electrode and an organic active region. In one aspect, the electronic device can include the electrode having a corresponding pitch and an organic active region adjacent to the electrode, wherein the organic active region has a width greater than the corresponding pitch. In another aspect, an electronic device can include a first set of electrodes oriented substantially along a direction and a second set of electrodes oriented substantially along the direction. The electronic device can also include a space between the first and second sets of the electrodes. The electronic device can still further include an organic active region overlying or underlying the first and second sets of electrodes and the space. In other aspects, processes of forming the electronic devices are also disclosed. | 2010-09-23 |
20100237348 | Thin Film Transistor Array Substrate - A thin film transistor (TFT) array substrate includes a stack structure disposed to raise an extended electrode of a drain electrode of a thin film transistor. Therefore, a contact hole does need to be very deep to expose the extended electrode of the drain electrode. | 2010-09-23 |
20100237349 | LIQUID CRYSTAL DISPLAY DEVICE AND FABRICATING METHOD THEREOF - Disclosed is a thin film transistor substrate for a fringe filed switching type liquid crystal display device, and a fabrication method thereof, that reduces the number of required mask processes, and thus improves fabrication efficiency. The fabrication method involves three mask processes, wherein the masks are partial transmitting masks, and the resulting photo-resist patterns have varying thicknesses. By having photo-resist layers of varying thicknesses, structures can be formed in multiple etching steps using the same photo-resist pattern by incrementally removing the photo-resist according to its thickness. The thin film transistor substrate has a common line, a common electrode, a gate line and a gate electrode formed directly on the substrate. The common electrode overlaps the pixel electrode in the pixel area. | 2010-09-23 |
20100237350 | PIXEL STRUCTURE - A pixel structure suitable for being disposed on a substrate includes a thin film transistor (TFT), a first pixel electrode, a second pixel electrode, a scan line and a data line. The TFT disposed on the substrate includes a gate, a source, a first drain and a second drain. A main TFT is formed by the gate, the source and the first drain. A sub-thin film transistor (sub-TFT) is formed by the gate, the first drain and the second drain. The first pixel electrode is electrically connected to the first drain, and a portion of the first drain extends between the second pixel electrode and the substrate to form capacitor-coupling electrode. The second pixel electrode is electrically connected to the second drain of the sub-TFT. The scan line is disposed on the substrate and electrically connected to the gate, and the data line is electrically connected to the source. | 2010-09-23 |
20100237351 | METHOD OF MANUFACTURING A DOUBLE GATE TRANSISTOR - A planar double-gate transistor is manufactured wherein crystallisation inhibitors are implanted into the channel region ( | 2010-09-23 |
20100237352 | ELECTRONIC DEVICE AND A METHOD OF MANUFACTURING AN ELECTRONIC DEVICE - The invention relates to an electronic device comprising a sequence of a first thin film transistor (TFT) and a second TFT, the first TFT comprising a first set of electrodes separated by a first insulator, the second TFT comprising a second set of electrodes separated by a second insulator, wherein the first set of electrodes and the second set of electrodes are formed from a first shared conductive layer and a second shared conductive layer, the first insulator and the second insulator being formed by a shared dielectric layer. The invention further relates to a method of manufacturing an electronic device. | 2010-09-23 |
20100237353 | Thin Film Transistor, Method of Fabricating the Same, and Method of Fabricating Liquid Crystal Display Device Having the Same - A thin film transistor includes a gate electrode, a gate insulation layer on the gate electrode, source and drain electrodes formed on the gate insulation layer, a polysilicon channel layer overlapping the ohmic contact layers and on the gate insulation layer between the source and drain electrodes, ohmic contact regions over the source and drain electrodes for contacting the polysilicon channel to the source and drain electrodes, and doping layers over the source and drain electrodes. | 2010-09-23 |
20100237354 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object of the present invention to provide a method of separating a thin film transistor, and circuit or a semiconductor device including the thin film transistor from a substrate by a method different from that disclosed in the patent document 1 and transposing the thin film transistor, and the circuit or the semiconductor device to a substrate having flexibility. According to the present invention, a large opening or a plurality of openings is formed at an insulating film, a conductive film connected to a thin film transistor is formed at the opening, and a peeling layer is removed, then, a layer having the thin film transistor is transposed to a substrate provided with a conductive film or the like. A thin film transistor according to the present invention has a semiconductor film which is crystallized by laser irradiation and prevents a peeling layer from exposing at laser irradiation not to be irradiated with laser light. | 2010-09-23 |
20100237355 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THIN FILM TRANSISTOR, AND DISPLAY DEVICE - A thin film transistor with a large on-current and a reduced off-current is provided with high fabrication efficiency. | 2010-09-23 |
20100237356 | BIDIRECTIONAL SILICON CARBIDE TRANSIENT VOLTAGE SUPPRESSION DEVICES - An electronic device includes a silicon carbide layer having a first conductivity type and having a first surface and a second surface opposite the first surface, and first and second silicon carbide Zener diodes on the silicon carbide layer. Each of the first and second silicon carbide Zener diodes may include a first heavily doped silicon carbide region having a second conductivity type opposite the first conductivity type on the silicon carbide layer, and an ohmic contact on the first heavily doped silicon carbide region. | 2010-09-23 |
20100237357 | Light Emitting Device Having Pillar Structure with Roughness Surface and the Forming Method Thereof - A light emitting device is provided which includes a substrate, a first semiconductor layer having a first region and a second region on the substrate; ac active layer is formed on the first region of the first semiconductor layer; a second semiconductor layer is formed on the active surface layer and the portion surface of the second semiconductor layer is a rough surface; a plurality of pillar structures with a hollow structure, and both of the outer surface and inner surface of the pillar structures are rough surface; a transparent conductive layer is formed to cover the plurality of pillar structures; a first electrode is formed on the transparent conductive layer; and a second electrode is formed on the second region of the first semiconductor layer. | 2010-09-23 |
20100237358 | LIGHT-EMITTING DEVICE AND LIGHT-EMITTING MODULE - A light-emitting device includes: a substrate sectioned into a first region and a second region; a first clad layer provided over the substrate in the first region; an active layer provided over the first clad layer and having an emission surface on at least one side surface; a second clad layer provided over the active layer; and a light dividing section arranged over the substrate in the second region and on an optical path of light emitted from the emission surface, wherein the light emitted from the emission surface is divided by the light dividing section into reflected light reflected on the light dividing section and transmitted light transmitted through the light dividing section. | 2010-09-23 |
20100237359 | FLAT AND THIN LED-BASED LUMINARY PROVIDING COLLIMATED LIGHT - A light-emitting device ( | 2010-09-23 |