38th week of 2014 patent applcation highlights part 50 |
Patent application number | Title | Published |
20140264161 | IN-SITU METHOD FOR PREPARING HYDROLYZED ACYL HALIDE COMPOUND - An in-situ method for preparing a hydrolyzed, acyl halide-containing compound by combining a reactant including a plurality of acyl halide functional groups containing reactant, a tri-hydrocarbyl phosphate compound and water within a hydrocarbon or halogenated hydrocarbon solvent. | 2014-09-18 |
20140264162 | METHOD FOR SOLUBILIZING CARBOXYLIC ACID-CONTAINING COMPOUND IN HYDROCARBON SOLVENT - A method for increasing the solubility of a hydrocarbon compound comprising an aliphatic or arene moiety substituted with at least one acyl halide and at least one carboxylic acid functional group within a hydrocarbon solvent, wherein the method includes the step of preparing a solution comprising: at least 80 v/v % of the hydrocarbon solvent, the hydrocarbon compound, and a tri-hydrocarbyl phosphate compound, wherein the concentration of the hydrocarbon compound is greater than its solubility limit within the solvent but less than its solubility limit in the solution and the hydrocarbon. | 2014-09-18 |
20140264163 | PROCESS FOR THE PRODUCTION OF METHYLENE DIPHENYL DIISOCYANATE ISOMER MIXTURES WITH HIGH 2,4'- METHYLENE DIPHENYL DIISOCYANATE PURITY - The present invention includes a process and apparatus for the production of methylene diphenyl diisocyanate (MDI) isomer mixtures with a low 2,2′-MDI isomer content and a high 2,4′-MDI isomer content. The resulting mixtures have an increased reactivity and are acceptable in food grade application due to the reduction in primary aromatic amines formed during the curing process. The process and apparatus also include controlling the amount of 4,4′-MDI, which is the most reactive isomer in the mixture allowing use in a wide variety of applications. | 2014-09-18 |
20140264164 | HYDROGEN SULFIDE STREAM FOR CATALYST SULFIDATION FROM REFINERY RICH AMINES - A process for the production of a H | 2014-09-18 |
20140264165 | OXETANE-CONTAINING COMPOUNDS AND COMPOSITIONS THEREOF - Oxetane-containing compounds, and compositions of oxetane-containing compounds together with carboxylic acids, latent carboxylic acids, and/or compounds having carboxylic acid and latent carboxylic acid functionality are provided. The oxetane-containing compounds and compositions thereof are useful as adhesives, sealants and encapsulants, particularly for components, and in the assembly, of LED devices. | 2014-09-18 |
20140264166 | PHENOXYPYRAZOLE COMPOSITION AND PROCESS FOR THE SOLVENT EXTRACTION OF METALS - Metal extractants of 2-hydroxyphenyldiazole compounds according to Formula (2): | 2014-09-18 |
20140264167 | WATER VAPOR BARRIER COMPOSITION - The invention generally provides a moisture barrier article comprising a polymer matrix with water vapor permeability equal to or below 1 g mm/(m2 day) at 90% relative humidity difference and the intended temperature of use between 15° C. and 30° C., and moisture absorbing particles dispersed in the matrix in an essentially uniform manner, wherein the moisture absorbing particles have an average diameter of between 1 and 15 micrometers and wherein the article has an average wall thickness to mean particle diameter of at least 10:1. | 2014-09-18 |
20140264168 | SECURITY DEVICE USING LIQUID CRYSTALS - The invention generally relates to optically variable devices, methods of preparation and applications or uses therefor. In particular, the invention includes trigger molecules employed as a dopant for a liquid crystal material. The liquid crystal material contains helical elements having a natural twist. The dopant is effective to change the natural twist of the helical elements when the dopant is addressed with incident light. Suitable dopants are selected from binaphthalene and derivatives thereof. | 2014-09-18 |
20140264169 | RED LIGHT-EMITTING FLUORESCENT SUBSTANCE AND LIGHT-EMITTING DEVICE EMPLOYING THE SAME - The embodiment provides a red light-emitting fluorescent substance represented by the following formula (1): | 2014-09-18 |
20140264170 | OXYNITRIDE PHOSPHOR POWDER, SILICON NITRIDE POWDER FOR PRODUCTION OF OXYNITRIDE PHOSPHOR POWDER, AND PRODUCTION METHOD OF OXYNITRIDE PHOSPHOR POWDER - An oxynitride phosphor powder contains α-SiAlON and aluminum nitride, obtained by mixing a silicon source, an aluminum source, a calcium source, and a europium source to produce a composition represented by a compositional formula: Ca | 2014-09-18 |
20140264171 | CONTINUOUS FLOW REACTOR FOR THE SYNTHESIS OF NANOPARTICLES - A continuous flow reactor for the efficient synthesis of nanoparticles with a high degree of crystallinity, uniform particle size, and homogenous stoichiometry throughout the crystal is described. Disclosed embodiments include a flow reactor with an energy source for rapid nucleation of the procurors following by a separate heating source for growing the nucleates. Segmented flow may be provided to facilitate mixing and uniform energy absorption of the precursors, and post production quality testing in communication with a control system allow automatic real-time adjustment of the production parameters. The nucleation energy source can be monomodal, multimodal, or multivariable frequency microwave energy and tuned to allow different precursors to nucleate at substantially the same time thereby resulting in a substantially homogenous nanoparticle. A shell application system may also be provided to allow one or more shell layers to be formed onto each nanoparticle. | 2014-09-18 |
20140264172 | Group III-V/Zinc Chalcogenide Alloyed Semiconductor Quantum Dots - A scalable method for the manufacture of narrow, bright, monodisperse, photo-luminescent quantum dots prepared in the presence of a Group II-VI molecular seeding cluster fabricated in situ from a zinc salt and a thiol or selenol compound. Exemplary quantum dots have a core containing indium, phosphorus, zinc and either sulfur or selenium. | 2014-09-18 |
20140264173 | AZEOTROPIC COMPOSITIONS OF 1,1,3,3-TETRACHLOROPROP-1-ENE AND HYDROGEN FLUORIDE - Provided are azeotropic or azeotrope-like mixtures of 1,1,3,3-tetrachloroprop-1-ene (HCO-1230za) and hydrogen fluoride. Such compositions are useful as feed stock in the production of HFC-245fa and HCFO-1233zd. | 2014-09-18 |
20140264174 | AZEOTROPIC COMPOSITIONS OF 1,3,3,3-TETRACHLOROPROP-1-ENE AND HYDROGEN FLUORIDE - Provided are azeotropic or azeotrope-like mixtures of 1,3,3,3-tetrachloroprop-1-ene (HCO-1230zd) and hydrogen fluoride. Such compositions are useful as a feed stock in the production of HFC245fa and HCFO1233zd. | 2014-09-18 |
20140264175 | PROCESS AND APPARATUS FOR CONDUCTING SIMULTANEOUS ENDOTHERMIC AND EXOTHERMIC REACTIONS - This invention relates to a process and an apparatus for conducting simultaneous endothermic and exothermic reactions in a microchannel reactor. A start-up procedure for the microchannel reactor is disclosed. | 2014-09-18 |
20140264176 | Membrane-Based Gas Separation Processes to Produce Synthesis Gas With a High CO Content - A process for producing syngas with a high content of carbon monoxide, reflected in a high CO:CO | 2014-09-18 |
20140264177 | SYSTEMS AND METHODS FOR GENERATING CARBON DIOXIDE FOR USE AS A REFORMING OXIDANT IN MAKING SYNGAS OR REFORMED GAS - Processes that generate syngas or reformed gas that have the desired H2/CO ratio, such that they can be used directly for producing higher value liquids, such as using a FT GTL process. The systems and methods of the present invention are simpler and more cost effective than conventional systems and methods. The systems and methods of the present invention generate the required CO2 in a reforming furnace by combusting natural gas with a mixture of O2 from an external source and CO2 that is recirculated from a reforming furnace. A second application of the natural gas combustion with external O2 mixed with recirculated CO2 in the reformer burners can be utilized in a DR process. The reformed gas or syngas containing H2 and CO is used to reduce iron oxide to metallic iron in a shaft furnace, for example. | 2014-09-18 |
20140264178 | PROCESS FOR INCREASING HYDROGEN CONTENT OF SYNTHESIS GAS - Process for increasing the hydrogen content of a synthesis gas containing one or more sulphur compounds, the synthesis gas including hydrogen, carbon oxides and steam, and having a ratio defined as R═(H | 2014-09-18 |
20140264179 | Modified Lecithin Corrosion Inhibitor In Fluid Systems - An anti-corrosion composition containing at least one fatty acid ester, at least one glycol, at least one ethylene oxide/propylene oxide (EO/PO) alkoxylate, at least one polyethylene glycol ester, and at least one modified lecithin is provided. An anti-corrosion composition also is provided which contains at least one fatty acid ester, at least one glycol, at least one sorbate, and at least one modified lecithin. A method of preparing an anti-corrosion composition is also provided. At least one modified lecithin can be blended with at least one fatty acid ester, at least one glycol, at least one EO/PO alkoxylate, or at least one polyethylene glycol ester, or any combination thereof. A method of inhibiting corrosion of a metal surface including applying an anti-corrosion composition to the metal surface in an amount effective to inhibit corrosion of the metal surface is further provided. | 2014-09-18 |
20140264180 | Engine Coolant Additive - An engine coolant additive for use in combination with a major amount of a coolant liquid is described. The engine coolant additive has an alkaline pH, and includes a salt of a monobasic carboxylic acid compound, a salt of an azole compound, and from about 25 weight percent to about 35 weight percent water. The additive may optionally include a transition metal compound such as molybdenum-containing compounds to assist in corrosion inhibition. | 2014-09-18 |
20140264181 | Thermoplastic Resin Composition Having Excellent EMI Shielding Property - A thermoplastic resin composition includes (A) about 50 to about 90% by weight of a crystalline thermoplastic resin having a melting point of about 200 to about 380° C.; and (B) about 10 to about 50% by weight of a filler in which a carbon nanostructure having an average length of about 1 to about 1000 μm and an average diameter of about 1 to about 100 nm is grown on a glass fiber surface. The thermoplastic resin composition can have excellent EMI shielding property and/or fluidity. | 2014-09-18 |
20140264182 | POWDER COATING METHOD AND APPARATUS FOR ABSORBING ELECTROMAGNETIC INTERFERENCE (EMI) - A method for producing a magnetic resonant frequency (MRF) absorber and apparatus for an MRF absorber are described herein. The method comprises processing a high permeability material such as permalloy comprising 80% nickel, 18% iron, 2% molybdenum to create a specific geometric form factor such as a flake, sphere, or rod. The geometric form factor may then be encapsulated in an insulating matrix. The insulating matrix may be a Potassium Silicate (SiO | 2014-09-18 |
20140264183 | Liquid Crystalline Polymer Composition - A compact camera module that contains a generally planar base on which is mounted a lens barrel is provided. The base, barrel, or both are molded from a polymer composition that includes a thermotropic liquid crystalline polymer and a plurality of mineral fibers (also known as “whisker”). The mineral fibers have a median width of from about 1 to about 35 micrometers and constitute from about 5 wt % to about 60 wt % of the polymer composition. | 2014-09-18 |
20140264184 | SOLUTION, ORGANIC SEMICONDUCTOR MATERIAL, ORGANIC SEMICONDUCTOR FILM, ELECTRONIC DEVICE AND ELECTRONIC EQUIPMENT - A solution includes an organic solvent and a compound dissolved in the organic solvent, having the following formula (1): | 2014-09-18 |
20140264185 | RECYCLING METHOD OF OLIVINE-BASED CATHODE MATERIAL FOR LITHIUM SECONDARY BATTERY, CATHODE MATERIAL FABRICATED THEREFROM, AND CATHODE AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME - The present invention relates to a method for recycling LiFePO | 2014-09-18 |
20140264186 | Ion producing and infrared emitting composition - The present invention provides for a natural, non-toxic, environmentally friendly, “green” mineral based composition that produces ions and emits far infrared heat and the composition comprises tourmaline microcrystals and at least one activating element. | 2014-09-18 |
20140264187 | Composite Powders For Laser Sintering - In one aspect, composite powders for laser sintering are described herein. In some embodiments, a composite powder for laser sintering comprises a polymeric matrix and carbon nanofibers disposed in the polymeric matrix. In some embodiments, the polymeric matrix can comprise poly(ether ketone ketone) and the carbon nanofibers can comprise cup-stacked carbon nanotubes. | 2014-09-18 |
20140264188 | PASTE COMPOSITION FOR PRINTING AND TOUCH PANEL - Disclosed is a paste composition for printing including conductive powders, a binder, a dispersing agent, and a solvent. The dispersing agent includes a block copolymer of polyethylene oxide (PEO)-polypropylene oxide (PPO)-polyethylene oxide (PEO), or a block copolymer of polypropylene oxide (PPO)-polyethylene oxide (PEO)-polypropylene oxide (PPO). | 2014-09-18 |
20140264189 | METHOD FOR SOLVENTLESS QUANTUM DOT EXCHANGE - The present invention describes a solventless ligand exchange using a siloxane polymer having a binding ligand that displaces the binding ligand on a quantum dot material. | 2014-09-18 |
20140264190 | HIGH ENERGY MATERIALS FOR A BATTERY AND METHODS FOR MAKING AND USE - A composition for forming an electrode. The composition includes a metal fluoride compound doped with a dopant. The addition of the dopant: (i) improves the bulk conductivity of the composition as compared to the undoped metal fluoride compound; (ii) changes the bandgap of the composition as compared to the undoped metal fluoride compound; or (iii) induces the formation of a conductive metallic network. A method of making the composition is included. | 2014-09-18 |
20140264191 | Multi Shell Metal Particles and Uses Thereof - A composition comprising a plurality of coated metal particles with a metal core surrounded by nested shells formed by an electrically conductive layer and by a barrier layer, at least one of the shells being formed by electroless plating. The invention also comprises a method of producing such compositions as well as the use of the composition in, for example, crystalline-silicon solar cell devices having contact structures formed on one or more surfaces of a solar cell device, such as those used in back contact solar cell devices or emitter wrap through (EWT) solar cell devices. | 2014-09-18 |
20140264192 | Cu2XSnY4 Nanoparticles - Materials and methods for preparing Cu | 2014-09-18 |
20140264193 | Preparation of Quantum Dot Beads Having a Silyl Surface Shell - Quantum dots (QDs) are encapsulated within microbeads having a silyl surface shell. The microbeads are prepared by copolymerizing unsaturated resins and an unsaturated organosilane in the presence of QDs. During the copolymerization, the unsaturated resin and the organosilane phase separate, forming beads having a silyl surface shell surrounding an essentially unsilylated interior. The QDs are encapsulated within the interior. The silyl shell provides a barrier against oxygen and other contaminants diffusing into the bead and reacting with the QDs. | 2014-09-18 |
20140264194 | In-Situ Synthesis of Multi-Core Core Electoconductive Powders - This invention relates to the in-situ synthesis of multi-core electroconductive powders. The multi-core ECPs of the present invention are made using an in-situ synthesis method which eliminates the need for combining mixtures of various types of single-core ECPs in order to achieve the desired end-use product. The multi-core ECPs described herein exhibit very little coloration. They also exhibit low electrical resistivity and contain reduced amounts of antimony. | 2014-09-18 |
20140264195 | Elastomeric Conductive Materials and Processes of Producing Elastomeric Conductive Materials - Processes for the preparation of elastomeric conductive material, involving combining at least one conductive polymer with rubber latex, at least one organic acid, at least one oxidant, a pH stabilizer, optionally an organic solvent, and optionally at least one surfactant. Also disclosed are elastomeric conductive materials produced by such processes, which exhibit excellent strength, elasticity, and conductivity. | 2014-09-18 |
20140264196 | Multi-Layer-Coated Quantum Dot Beads - Disclosed herein are coated beads made of a primary matrix material and containing a population of quantum dot nanoparticles. Each bead has a multi-layer surface coating. The layers can be two or more distinct surface coating materials. The surface coating materials may be inorganic materials and/or polymeric materials. A method of preparing such particles is also described. The coated beads are useful for composite materials for applications such as light-emitting devices. | 2014-09-18 |
20140264197 | Indium Oxide Transparent Conductive Film - An indium oxide sintered compact containing zirconium as an additive, wherein the ratio of atomic concentration of zirconium to the sum of the atomic concentration of indium and the atomic concentration of zirconium is in the range of 0.5 to 4%, the relative density is 99.3% or higher, and the bulk resistance is 0.5 mΩ·cm or less. An indium oxide transparent conductive film of high transmittance in the visible light region and the infrared region, with low film resistivity, and in which the crystallization temperature can be controlled, as well as the manufacturing method thereof, and an oxide sintered compact for use in producing such transparent conductive film are provided. | 2014-09-18 |
20140264198 | High Energy Materials for a Battery and Methods for Making and Use - A composition for forming an electrode. The composition includes a metal fluoride, such as copper fluoride, and a matrix material. The matrix material adds capacity to the electrode. The copper fluoride compound is characterized by a first voltage range in which the copper fluoride compound is electrochemically active and the matrix material characterized by a second voltage range in which the matrix material is electrochemically active and substantially stable. A method for forming the composition is included. | 2014-09-18 |
20140264199 | STABIILZED FLUIDS FOR INDUSTRIAL APPLICATIONS - The present invention is directed toward compositions suitable for use as dielectric fluids, lubricant fluids and biodiesel fluids. Compositions described herein are obtained from a saturated, unsaturated or combinations of both monol, diol, triol or polyol acyl ester based fluid and/or a non-ester based fluid and 2,4,6-tris(di-C | 2014-09-18 |
20140264200 | COLOR CHANGING AQUEOUS COATINGS - This invention relates to color changing aqueous coatings which are stable at a pH greater than about 10.5 | 2014-09-18 |
20140264201 | NANOCOMPOSITE - A nanocomposite can include a polyolefin composition having at least one polyolefin. The polyolefin composition can have a multimodal molecular weight distribution, such as a bimodal molecular weight distribution. The nanocomposite can also include at least 5% by weight of nanoparticles, relative to a total weight of the nanocomposite. The nanoparticles can be carbon nanoparticles, silicon nanoparticles, or SiC nanoparticles. A nanocomposite masterbatch can be prepared by melt blending the polyolefin composition with the nanoparticles. A polyolefin resin can be prepared by blending the nanocomposite with a polyolefin. Formed articles can include the polyolefin resin. | 2014-09-18 |
20140264202 | OPTICAL FILTER, AND SOLID-STATE IMAGE PICKUP DEVICE AND CAMERA MODULE USING THE OPTICAL FILTER - The problem of the present invention is to overcome drawbacks of conventional optical filters such as near-infrared cut filters and to provide an optical filter which generates little scatted light even during light absorption and has excellent transmittance property. The optical filter of the present invention is characterized by containing a squarylium-based compound and a compound which absorbs or quenches fluorescence of the squarylium-based compound. The optical filter of the present invention preferably contains a near-infrared absorbing dye containing a squarylium compound (A) and at least one compound (B) selected from the group consisting of a phthalocyanine-based compound (B-1) and a cyanine-based compound (B-2). | 2014-09-18 |
20140264203 | HANDHELD CONTROL UNIT FOR AUTOMOTIVE LIFT - An apparatus for operating a vehicle lift comprises at least one lifting assembly, a control unit, and a control pendant. The control pendant is configured to remotely control the motion of the vehicle lift through the control unit. The control pendant is configured to permit the lifting of a vehicle by the push of a single button on the control pendant. To permit lifting of a vehicle with a single button, the control pendant comprises a menu screen and a plurality of menu buttons. The menu screen and the plurality of menu buttons may be used together by a user to select one vehicle profile of a plurality of vehicle profiles. The selected vehicle profile may correspond to the vehicle being lifted. The selected vehicle profile provides specific data with respect to how the at least one lifting assembly should be moved for the particular vehicle being lifted. | 2014-09-18 |
20140264204 | EXPOSED HEADED-ELEMENT PULLING APPARATUS - The present application is directed to an exposed headed-element pulling apparatus for pulling exposed headed-elements such as double headed nails from embedding material. The apparatus comprises a hooking element having a blow nozzle. The hooking element is connected to a linear actuator. A spacer element is integrated with the linear actuator to provide an opposing force against the embedding material when pulling the embedded exposed-headed element. Exposed headed-elements are pulled by the apparatus and then ejected by the blow nozzle through an ejection slot in the spacer element. Pulled headed-element can be collected in an attached bag for reuse. An optional rotation mechanism may be incorporated for more ergonomic pulling capabilities. | 2014-09-18 |
20140264205 | SYSTEMS AND METHODS FOR RECHARGING AN AUTO-INJECTOR - Systems, devices, and methods are described for resetting an auto-injector. In one aspect, a device for resetting an auto-injector comprises a housing having a receiving shaft into which the auto-injector can be inserted in a receiving direction, a reset element configured to engage a collar of the auto-injector, and a post configured to engage a plunger within the auto-injector when the auto-injector is inserted into the receiving shaft. The reset element moves the collar relative to the auto-injector in a first direction along the receiving direction. The post moves the plunger in a second direction relative to the auto-injector opposite the receiving direction. | 2014-09-18 |
20140264206 | ELASTICALLY DEFORMABLE CONDUIT ASSEMBLY AND METHOD OF FITTINGLY RETAINING WIRES - An elastically deformable conduit assembly includes a conduit comprising an outer surface and formed of an elastically deformable material, the conduit configured to deform from a relaxed condition to an elastically deformed condition. Also included is a mating component configured to engage the outer surface of the conduit in the elastically deformed condition. | 2014-09-18 |
20140264207 | ELECTRIC ASSIST CART - Disclosed is an electric assist cart that can travel by applying an assisting force in addition to a driving force applied by an operator. A controller operates an electric motor to apply a determined assisting force to a drive wheel and lifts or lowers a deck lift portion in response to an instruction for lifting or lowering a deck. When a handling detection part detects an instruction for braking the brake, the brake is braked, and an operation of the electric motor is inhibited regardless of a detection result of the torque detection part. | 2014-09-18 |
20140264208 | Multi-Purpose Hammer - A multi-purpose hammer includes a hammer head connected to a handle. The hammer head includes an anvil, two claws, a horn and a protuberance. The claws extend substantially opposite to the anvil. The horn extends from one of the claws. The protuberance is formed between the anvil and the claws. | 2014-09-18 |
20140264209 | HOIST AND WINCH CABLE ANGLE SENSOR - An assembly includes a hoist or a winch, a cable, and a fleet angle sensor. The fleet angle sensor includes a frame disposed around an opening. A first photodetector with multiple light-receiving zones is mounted on the frame. A first light source is mounted on the frame opposite the first photodetector. The first light source directs a first light beam across the opening to the multiple light-receiving zones of the first photodetector. The cable extends through the opening and into the first light beam, and the multiple light-receiving zones produce signals that vary based upon a fleet angle of the cable extending through the opening. | 2014-09-18 |
20140264210 | Pulling Tool - A pulling tool is provided with a rotatable drum having a cable wound thereon. A motor is drivingly connected to the rotatable drum and the rotatable drum and motor are disposed within a unique housing structure. The rotatable drum is driven by a planetary gear system that is disposed within the rotatable drum to provide a compact assembly. A belt and pulley system is provided for delivering torque from the motor to the planetary gear system. The rotatable drum is provided with a two-piece stepped construction that allows the planetary gear system to be assembled within the drum and allows for the initial wraps of a cable around the smaller diameter portion of the stepped drum. | 2014-09-18 |
20140264211 | Pulling Tool - A pulling tool is provided with a rotatable drum having a cable wound thereon. A motor is drivingly connected to the rotatable drum and the rotatable drum and motor are disposed within a unique housing structure. The rotatable drum is driven by a planetary gear system that is disposed within the rotatable drum to provide a compact assembly. A belt and pulley system is provided for delivering torque from the motor to the planetary gear system. The rotatable drum is provided with a two-piece stepped construction that allows the planetary gear system to be assembled within the drum and allows for the initial wraps of a cable around the smaller diameter portion of the stepped drum. | 2014-09-18 |
20140264212 | WINCH APPARATUS - Provided is a winch apparatus including two exchangeable and interchangeable gears connecting a motor to a drum, the drum being operative to extend and retract a flexible line. By exchanging and interchanging the gears to effect a change in the ratio of the diameters of the first gear to the second gear, the torque and the linear speed of the flexible line are adjustable, permitting the same winch apparatus to move heavier loads at lower speeds, or lighter loads at higher speeds | 2014-09-18 |
20140264213 | Telescoping Boom Hoist System - A telescoping boom hoist system is a tree mounted system that provides a hunter with a facilitated means of raising and installing a tree stand. The telescoping boom hoist system is provided with a collapsible design that allows for facilitated transport and handling. The apparatus utilizes a telescopic boom and a frame assembly. The frame assembly provides a stable base for the apparatus. The telescopic boom is coupled to an axle member of the frame assembly, permitting the telescopic boom to pivot. The telescopic boom utilizes a plurality of guide rings that function as pulley or hoist anchor points. The telescoping boom extends the positioning of the guide rings in order to prevent interference while hoisting a tree stand. After installing the tree stand, the telescoping boom hoist system provides a means of safely raising a plurality of hunting equipment to the mounted tree stand. | 2014-09-18 |
20140264214 | EQUALIZING RIGGING BLOCK FOR USE WITH A SYNTHETIC ROUNDSLING - An equalizing rigging block for use with a synthetic roundsling is disclosed. The rigging block includes in preferred embodiments (a) a flatter and wider sheave to better accommodate a wider or flatter cross-section synthetic roundsling; (b) higher side sections for the sheave; and (c) a plurality of stacked bearings along the rigging block axis to provide enhanced lateral stability of the rigging block. In preferred embodiments, the rigging block sheave is manufactured from a synthetic material, such as plastic. The equalizing rigging block exhibits improved characteristics of holding a synthetic roundsling within the rigging block, and of reducing wear and tear on the roundsling. | 2014-09-18 |
20140264215 | SCISSORS LIFT ASSEMBLY FOR JACKING TOWER - A scissors lift assembly includes a top frame, a bottom frame, and a pair of scissors assemblies, each extending between the top frame and the bottom frame to move the top frame relative to the bottom frame. The scissors lift assembly also includes a safety catch mechanism coupled to at least one of the top frame, the bottom frame, and one of the scissors assemblies. | 2014-09-18 |
20140264216 | Handle System - A handle system that securely joins a handle to a lifting assembly when the lifting assembly is not in use. The handle detachably joins with a lift portion of the lifting assembly and manipulates the lift portion to operate the lifting assembly. After use, the handle detaches from the lift portion and joins with a handle storage portion. The handle storage portion includes a solid rod that receives the handle and securely fastens to the handle. The outer diameter of the handle storage portion is fractionally smaller than the inner diameter of the handle, thereby creating a snug fit. The handle also includes an aperture that receives a tab or a ring that extend from the handle storage portion to further fasten the handle to the lifting assembly. | 2014-09-18 |
20140264217 | Electric Fence Energizer Systems - An electric fence energizer system includes a main electrical energizer to supply a main voltage to the system and a remote electrical energizer to supply a supplemental voltage to the system. | 2014-09-18 |
20140264218 | FENCE AND METHOD OF ASSEMBLING SAME - A gate configured to be shipped in a compact disassembled state and assembled in situ into a structurally rigid frame around an area is provided. In one embodiment, the gate includes first and second vertical support posts, a lower horizontal support, a cross-brace, first and second upper vertical posts, a screen, first and second elbow joints, and first and second Tee joints. The elbow joints are configured to couple the vertical support posts to the lower horizontal support. The Tee joints are configured to couple the vertical support posts, the upper vertical posts, and the cross-brace together. The screen is configured to be coupled to the vertical support posts, the upper vertical posts, and the lower horizontal support post. The cross-brace is configured to extend between the first and second vertical support posts at a distance below the upper end of the screen and rearwardly away from the screen. | 2014-09-18 |
20140264219 | FENCE ASSEMBLY - A fence assembly is provided having a plurality of posts, a plurality of elongated rails, with each rail having a hollow interior and a front face including an elongated channel extending into the hollow interior, a plurality of fence slats, and a plurality of brackets, with each bracket formed to retain at least one fence slat. The brackets include engagement ends positioned on an extension member formed on the bracket body. The engagement ends are inserted into the channel and the interior hollow of the rails to secure the brackets to the rails. The brackets are secured to the rail and create a retaining slot for receiving at least one fence slat and to support the fence slat on the rail. The rail is attached to one or more posts to form, along with the plurality of brackets and fence slats, a fencing section. | 2014-09-18 |
20140264220 | METAL POST BRACKET ASSEMBLY AND METHODS OF USE - A shaped bracket having a multi section bent flat plate having an elevated abutment member having an oval cutout that permits projections or lugs on the post to be secured therewithin, such flat plate configured to fit the surface of the T-shaped post, and, thus, functions to enable a metal post bracket assembly configured to securely affix fence rails to T-shaped posts, more specifically, a single piece bracket that is easily attached and easy to install to the T-shaped post, provides neat or hidden appearance, and can be firmly secured to the steel posts capable of withstanding side winds. | 2014-09-18 |
20140264221 | HANDRAIL APPARATUS FOR USE WITH VEHICLES - A handrail apparatus and method for use with vehicles are disclosed. An apparatus in accordance with the teachings of this disclosure includes a first coupling plate to be coupled to a monument of a vehicle, a second coupling plate to be coupled to the monument of the vehicle. The apparatus includes a handrail coupled to the first coupling plate and a support coupled to the second coupling plate and the handrail. The handrail is movable between a stowed position and a deployed position. | 2014-09-18 |
20140264222 | Resistive Switching Random Access Memory with Asymmetric Source and Drain - The present disclosure provides one embodiment of a resistive random access memory (RRAM) structure. The RRAM structure includes a resistive memory element formed on a semiconductor substrate and designed for data storage; and a field effect transistor (FET) formed on the semiconductor substrate and coupled with the resistive memory element. The FET includes asymmetric source and drain. The resistive element includes a resistive material layer and further includes first and second electrodes interposed by the resistive material layer. | 2014-09-18 |
20140264223 | Metal Aluminum Nitride Embedded Resistors for Resistive Random Memory Access Cells - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions. | 2014-09-18 |
20140264224 | Performance Enhancement of Forming-Free ReRAM Devices Using 3D Nanoparticles - Resistive random access memory (ReRAM) cells can include an embedded metal nanoparticle switching layer and electrodes. The metal nanoparticles can be formed using a micelle solution. The generation of the nanoparticles can be controlled in multiple dimensions to achieve desirable performance characteristics, such as low power consumption as well as low and consistent switching currents. | 2014-09-18 |
20140264225 | RESISTANCE-VARIABLE MEMORY DEVICE - According to one embodiment, a resistance-variable memory device that is suitable for miniaturization is provided. A resistance-variable memory device according to the embodiment comprises a resistance-variable layer, and an ion supply layer that is laminated on the resistance-variable layer and that contains a silver alloy. A silver concentration of the ion supply layer is in a range of 30-80 atom %. | 2014-09-18 |
20140264226 | INTEGRATION OF AN AMORPHOUS SILICON RESISTIVE SWITCHING DEVICE - An integrated circuit device. The integrated circuit device includes a semiconductor substrate having a surface region. A gate dielectric layer overlies the surface region of the substrate. The device includes a MOS device having a p+ active region. The p+ active region forms a first electrode for a resistive switching device. The resistive switching device includes an amorphous silicon switching material overlying the p+ active region and a metal electrode overlies the first metal conductor structure. The metal electrode includes a metal material, upon application of a positive bias to the metal electrode, forms a metal region in the amorphous silicon switching material. The MOS device provides for a select transistor for the integrated circuit device. | 2014-09-18 |
20140264227 | SEMICONDUCTOR MEMORY AND METHOD OF MANUFACTURING THE SAME - A semiconductor memory includes a plurality of stripe-like active areas formed by stacking, in a direction perpendicular to a substrate, a plurality of layers extending parallel to the substrate, a first gate electrode formed on first side surfaces of the active areas, the first side surfaces being perpendicular to the substrate, a second gate electrode formed on second side surfaces of the active areas, the second side surfaces being perpendicular to the substrate. The layers are patterned in self-alignment with each other, intersections of the active areas and the first gate electrode form a plurality of memory cells, and the plurality of memory cells in an intersecting plane share the first gate electrode. | 2014-09-18 |
20140264228 | FIN SELECTOR WITH GATED RRAM - A method of fabricating a fin selector with a gated RRAM and the resulting device are disclosed. Embodiments include forming a bottom electrode layer and a hardmask on a semiconductor substrate; etching the hardmask, bottom electrode layer, and semiconductor substrate to form a fin-like structure; forming first and second dummy gate stacks on first and second side surfaces of the fin-like structure, respectively; forming spacers on vertical surfaces of the first and second dummy gate stacks; forming an ILD surrounding the spacers; removing the first and second dummy gate stacks, forming first and second cavities on first and second sides of the fin-like structure; forming an RRAM layer on the first and second side surfaces of the fin-like structure in the first and second cavities, respectively; and filling each of the first and second cavities with a top electrode. | 2014-09-18 |
20140264229 | LOW FORM VOLTAGE RESISTIVE RANDOM ACCESS MEMORY (RRAM) - The present disclosure provides a resistive random access memory (RRAM) cells and methods of making the same. The RRAM cell includes a transistor and an RRAM structure. The RRAM structure includes a bottom electrode having a via portion and a non-planar portion, a resistive material layer conformally covering the non-planar portion of the bottom electrode; and, a top electrode on the resistive material layer. The via portion of the bottom electrode is embedded in a first RRAM stop layer. The non-planar portion of the bottom electrode has an apex and is centered above the via portion. | 2014-09-18 |
20140264230 | PHASE CHANGE MATERIAL SWITCH AND METHOD OF MAKING THE SAME - A phase change material (PCM) switch is disclosed that includes a resistive heater element, and a PCM element proximate the resistive heater element. A thermally conductive electrical insulating barrier layer positioned between the PCM heating element and the resistive heating element, and conductive lines extend from ends of the PCM element and control lines extend from ends of the resistive heater element | 2014-09-18 |
20140264231 | Confined Defect Profiling within Resistive Random Memory Access Cells - Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A stack including a defect source layer, a defect blocking layer, and a defect acceptor layer disposed between the defect source layer and the defect blocking layer may be subjected to annealing. During the annealing, defects are transferred in a controllable manner from the defect source layer to the defect acceptor layer. At the same time, the defects are not transferred into the defect blocking layer thereby creating a lowest concentration zone within the defect acceptor layer. This zone is responsible for resistive switching. The precise control over the size of the zone and the defect concentration within the zone allows substantially improvement of resistive switching characteristics of the ReRAM cell. In some embodiments, the defect source layer includes aluminum oxynitride, the defect blocking layer includes titanium nitride, and the defect acceptor layer includes aluminum oxide. | 2014-09-18 |
20140264232 | LOW TEMPERATURE TRANSITION METAL OXIDE FOR MEMORY DEVICE - A metal oxide formed by in situ oxidation assisted by radiation induced photo-acid is described. The method includes depositing a photosensitive material over a metal surface of an electrode. Upon exposure to radiation (for example ultraviolet light), a component, such as a photo-acid generator, of the photosensitive material forms an oxidizing reactant, such as a photo acid, which causes oxidation of the metal at the metal surface. As a result of the oxidation, a layer of metal oxide is formed. The photosensitive material can then be removed, and subsequent elements of the component can be formed in contact with the metal oxide layer. The metal oxide can be a transition metal oxide by oxidation of a transition metal. The metal oxide layer can be applied as a memory element in a programmable resistance memory cell. The metal oxide can be an element of a programmable metallization cell. | 2014-09-18 |
20140264233 | RESISTANCE VARIABLE MEMORY STRUCTURE AND METHOD OF FORMING THE SAME - A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, protection spacers and a second electrode. The first electrode has a top surface and a first outer sidewall surface on the memory region. The resistance variable layer has a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection spacers are disposed over a portion of the top surface of the first electrode and surround at least the second portion of the resistance variable layer. The protection spacers are configurable to protect at least one conductive path in the resistance variable layer. The protection spacers have a second outer sidewall surface substantially aligned with the first outer sidewall surface of the first electrode. The second electrode is disposed over the resistance variable layer. | 2014-09-18 |
20140264234 | RESISTANCE VARIABLE MEMORY STRUCTURE AND METHOD OF FORMING THE SAME - A semiconductor structure includes a memory region. A memory structure is disposed on the memory region. The memory structure includes a first electrode, a resistance variable layer, a protection material and a second electrode. The first electrode has a top surface on the memory region. The resistance variable layer has at least a first portion and a second portion. The first portion is disposed over the top surface of the first electrode and the second portion extends upwardly from the first portion. The protection material surrounds the second portion of the resistance variable layer. The protection material is configurable to protect at least one conductive path in the resistance variable layer. The second electrode is disposed over the resistance variable layer. | 2014-09-18 |
20140264235 | NON-VOLATILE MEMORY DEVICE WITH TSI/TSV APPLICATION - Memory devices and methods for forming the device are disclosed. The device includes a substrate having an array surface and a non-array surface and a memory array having a plurality of memory cells interconnected by first conductors in a first direction and second conductors in a second direction. The memory array is disposed on the array surface of the substrate. The device further includes through silicon via (TSV) contacts disposed in the substrate. The TSV contacts extend from the array surface to the non-array surface, enabling electrical connections to the array from the non-array surface. | 2014-09-18 |
20140264236 | CONTROLLING ON-STATE CURRENT FOR TWO-TERMINAL MEMORY - Provision of fabrication, construction, and/or assembly of a memory device including a two-terminal memory portion is described herein. The two-terminal memory device fabrication can provide enhanced capabilities in connection with precisely tuning on-state current over a greater possible range. | 2014-09-18 |
20140264237 | RESISTIVE RAM AND FABRICATION METHOD - A structure for a resistive memory device and a method to fabricate the same is disclosed. The method includes providing a bottom electrode comprising a metal and forming a memory layer on the bottom electrode. The memory layer includes a first layer of metal oxide, and a second layer including the nitrogen-containing metal oxide. A top electrode is formed over the memory layer. | 2014-09-18 |
20140264238 | SCALING OF FILAMENT BASED RRAM - A solid state memory comprises a top electrode, a bottom electrode and an insulating switching medium that is disposed at a thickness based on a predetermined function. The insulating switching medium generates a conduction path in response to an electric signal applied to the device. The thickness of the insulating switching medium is a function of a filament width of the conduction path and operates to prevent rupture of a semi-stable region. The semi-stable region maintains filament structure over time and does not degrade into retention failure. The solid state memory can comprise one or more conducting layers that can operate to control the conductance at an on-state of the memory and offer oxygen vacancies or metal ions to the switching medium. The function of the thickness of the insulating switching medium can vary depending upon the number of conduction layers disposed at the insulating switching medium. | 2014-09-18 |
20140264239 | Using multi-layer MIMCAPs in the tunneling regime as selector element for a cross-bar memory array - Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. The selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode. The tri-layer dielectric layer can include a low band gap dielectric layer disposed between two higher band gap dielectric layers. The high band gap dielectric layers can be doped with doping materials to form traps at energy levels higher than the operating voltage of the memory device. | 2014-09-18 |
20140264240 | METHOD FOR MAKING MEMORY CELL BY MELTING PHASE CHANGE MATERIAL IN CONFINED SPACE - To form a memory cell with a phase change element, a hole is formed through an insulator to a bottom electrode, and a phase change material is deposited on the insulator surface covering the hole. A confining structure is formed over the phase change material so the phase change material expands into the hole when heated to melting to become electrically connected to the bottom electrode. A top electrode is formed over and electrically connects to the phase change material. The bottom electrode can include a main portion and an extension having a reduced lateral dimension. The confining structure can include capping material having a higher melting temperature than the phase change material, and sufficient tensile strength to ensure the phase change material moves into the hole when the phase change material melts and expands. The hole can be a J shaped hole. | 2014-09-18 |
20140264241 | ZnTe on TiN or Pt Electrodes as a Resistive Switching Element for ReRAM Applications - Resistive random access memory (ReRAM) cells can include a ZnTe switching layer and TiN or Pt electrodes. The combination of the switching layer of ZnTe and the electrodes of TiN or Pt is designed to achieve desirable performance characteristics, such as low current leakage as well as low and consistent switching currents. High temperature anneal of the ZnTe switching layer can further improve the performance of the ReRAM cells. The switching layer may be deposited using various techniques, such as sputtering or atomic layer deposition (ALD). | 2014-09-18 |
20140264242 | DISTURB-RESISTANT NON-VOLATILE MEMORY DEVICE AND METHOD - A disturb-resistant nonvolatile memory device includes a substrate, a dielectric material overlying the semiconductor substrate, a first cell comprising a first wiring structure extending in a first direction overlying the dielectric material, a first contact region, a first resistive switching media, and a second wiring structure extending in a second direction orthogonal to the first direction, a second cell comprising the first wiring structure, a second contact region, a second resistive switching media, and a third wiring structure separated from the second wiring structure and parallel to the second wiring structure, and a dielectric material disposed at least in a region between the first switching region and the second switching region to electrically and physically isolate the first switching region and the second switching region. | 2014-09-18 |
20140264243 | NONVOLATIVE MEMORY WITH FILAMENT - An embodiment, relates to a phase changeable memory cell. The phase changeable memory cell is formed with an ultra small contact area formed by filament conductive path. This contact area between a heating electrode and phase changeable material layer is determined by the forming of filament path, which is conductive and much smaller in cross-sectional area than the minimum area that can be achieved by lithography. This leads to high heating efficiency and ultra-low programming current. As the disclosed structure has no requirement on endurance for the formed filament and use phase changeable material rather than filament-forming material to provide high on/off resistance ratio, drawbacks of filament-forming material on low endurance and low sensing margin are avoided in the proposed cell structure. Therefore, by using ReRAM-related filament-forming materials to get sub-litho-dimension conductive path as heating electrode and using high on/off ratio phase changeable material as the storage media, it is possible to reduce the power consumption of phase changeable memory dramatically without the drawbacks of filament-forming materials that are shown in ReRAM. | 2014-09-18 |
20140264244 | NONVOLATIVE MEMORY - A phase changeable memory cell is disclosed. In an embodiment of the invention, a phase changeable memory cell is formed with an ultra-small contact area to reduce the programming current. This contact area between heater electrode and phase changeable material is limited by the thickness of thin films rather than lithographic critical dimension in one dimension. As a result, the contact area is much less than the square of lithographic critical dimension for almost every technology node, which is helps in reducing current. To further reduce the current and improve the heating efficiency, heater electrode is horizontally put with its length being tunable so as to minimize the heat loss flowing through the heater to the terminal that connects to the front end switch device. In addition, above and below the heater layer, low-thermal-conductivity material (LTCM) is used to minimize heat dissipation. This results in reduced power consumption of the phase changeable memory cell with improved reliability. | 2014-09-18 |
20140264245 | Resistive Memory Cell with Trench-Shaped Bottom Electrode - A resistive memory cell, e.g., a CBRAM or ReRAM cell, may include a top electrode, a bottom electrode having an elongated trench shape defining a pair of spaced-apart bottom electrode sidewalls, and an electrolyte switching region arranged between the top electrode and at least one of the bottom electrode sidewalls to provide a path for the formation of a conductive filament or vacancy chain from the at least one bottom electrode sidewall to the top electrode when a voltage bias is applied to the cell. In addition, a memory may include an array of resistive memory cells including a top electrode structure, a plurality of trench-style bottom electrodes extending in first direction, and a plurality of inverted-trench-style electrolyte switching regions extending perpendicular to the trench-style bottom electrodes to define a two-dimensional array of spaced-apart contact areas between the electrolyte switching regions and the bottom electrodes. | 2014-09-18 |
20140264246 | Resistive Memory Cell with Trench-Shaped Bottom Electrode - A resistive memory cell, e.g., CBRAM or ReRAM cell, may include a top electrode an a trench-shaped bottom electrode structure defining a bottom electrode connection and a sidewall extending from a first sidewall region adjacent the bottom electrode connection to a tip region defining a tip surface facing generally away from the bottom electrode connection, and wherein the tip surface facing away from the bottom electrode connection has a tip thickness that is less than a thickness of the first sidewall region adjacent the bottom electrode connection. An electrolyte switching region is arranged between the top electrode and the bottom electrode sidewall tip region to provide a path for the formation of a conductive filament or vacancy chain from the bottom electrode sidewall tip surface of the top electrode, via the electrolyte switching region, when a voltage bias is applied to the resistive memory cell. | 2014-09-18 |
20140264247 | Resistive Memory Cell with Reduced Bottom Electrode - A resistive memory cell may include a ring-shaped bottom electrode, a top electrode, and an electrolyte layer arranged between the bottom and top electrodes. A ring-shaped bottom electrode may be formed by forming a dielectric layer over a bottom electrode contact, etching a via in the dielectric layer to expose at least a portion of the bottom electrode contact, depositing a conductive via liner over the dielectric layer and into the via, the via liner deposited in the via forming a ring-shaped structure in the via and a contact portion in contact with the exposed bottom electrode contact, the ring-shaped structure defining a radially inward cavity of the ring-shaped structure, and filling the cavity with a dielectric fill material, such that the ring-shaped structure of the via liner forms the ring-shaped bottom electrode, depositing an electrolyte layer over the bottom electrode, and depositing a top electrode over the electrolyte layer. | 2014-09-18 |
20140264248 | Sidewall-Type Memory Cell - A sidewall-type memory cell (e.g., a CBRAM, ReRAM, or PCM cell) may include a bottom electrode, a top electrode layer defining a sidewall, and an electrolyte layer arranged between the bottom and top electrode layers, such that a conductive path is defined between the bottom electrode and a the top electrode sidewall via the electrolyte layer, wherein the bottom electrode layer extends generally horizontally with respect to a horizontal substrate, and the top electrode sidewall extends non-horizontally with respect to the horizontal substrate, such that when a positive bias-voltage is applied to the cell, a conductive path grows in a non-vertical direction (e.g., a generally horizontal direction or other non-vertical direction) between the bottom electrode and the top electrode sidewall. | 2014-09-18 |
20140264249 | NONVOLATILE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A nonvolatile memory device includes a plurality of nonvolatile memory elements each having an upper electrode, a variable resistance layer, and a lower electrode; a first insulating layer embedding the plurality of nonvolatile memory elements, and ranging from a lowermost part of the lower electrode to a position higher than an uppermost part of the upper electrode in each of the nonvolatile memory elements; a second insulating layer being formed on the first insulating layer, and having an average size of vacancies larger than an average size of vacancies included in the first insulating layer, or having an average carbon concentration higher than an average carbon concentration of the first insulating layer; and a conductive layer penetrating the second insulating layer and a part of the first insulating layer and being connected to at least one of the upper electrodes included in the nonvolatile memory elements. | 2014-09-18 |
20140264250 | LOW TEMPERATURE IN-SITU DOPED SILICON-BASED CONDUCTOR MATERIAL FOR MEMORY CELL - Providing for two-terminal memory cell structures and fabrication that can be achieved with a relatively low temperature process(es) is described herein. By way of example, disclosed two-terminal memory cells can be formed at least in part as a continuous deposition, potentially yielding improved efficiency in manufacturing. Furthermore, various embodiments can be compatible with some existing complementary metal oxide semiconductor fabrication processes, reducing or avoiding retooling overhead that might be associated with modifying existing fabrication processes in favor of other two-terminal memory cell fabrication techniques. | 2014-09-18 |
20140264251 | MEMORY CELL WITH REDUNDANT CARBON NANOTUBE - A configuration for a carbon nanotube (CNT) based memory device can include multiple CNT elements in order to increase memory cell yield by reducing the times when a memory cell gets stuck at a high state or a low state. | 2014-09-18 |
20140264252 | Current Selector for Non-Volatile Memory in a Cross Bar Array Based on Defect and Band Engineering Metal-Dielectric-Metal Stacks - Selector devices that can be suitable for memory device applications can have low leakage currents at low voltages to reduce sneak current paths for non selected devices, and high leakage currents at high voltages to minimize voltage drops during device switching. In some embodiments, the selector device can include a first electrode, a tri-layer dielectric layer, and a second electrode. The tri-layer dielectric layer can include a high leakage dielectric layer sandwiched between two lower leakage dielectric layers. The low leakage layers can function to restrict the current flow across the selector device at low voltages. The high leakage dielectric layer can function to enhance the current flow across the selector device at high voltages. | 2014-09-18 |
20140264253 | LEAKAGE REDUCTION STRUCTURES FOR NANOWIRE TRANSISTORS - A nanowire device of the present description may include a highly doped underlayer formed between at least one nanowire transistor and the microelectronic substrate on which the nanowire transistors are formed, wherein the highly doped underlayer may reduce or substantially eliminate leakage and high gate capacitance which can occur at a bottom portion of a gate structure of the nanowire transistors. As the formation of the highly doped underlayer may result in gate inducted drain leakage at an interface between source structures and drain structures of the nanowire transistors, a thin layer of undoped or low doped material may be formed between the highly doped underlayer and the nanowire transistors. | 2014-09-18 |
20140264254 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND ILLUMINATION APPARATUS INCLUDING THE SAME - There is provided a light emitting device including a plurality of nanoscale light emitting structures spaced apart from one another on a first conductivity-type semiconductor base layer, the plurality of nanoscale light emitting structures each including a first conductivity-type semiconductor core, an active layer and a second conductivity-type semiconductor layer, and an electrode connected to the second conductivity-type semiconductor layer. The electrode is disposed between a first nanoscale light emitting structure and a second nanoscale light emitting structure among the plurality of nanoscale light emitting structures, and the electrode has a height lower than a height of the plurality of nanoscale light emitting structures. | 2014-09-18 |
20140264255 | Method for Making a Sensor Device Using a Graphene Layer - A graphene layer is generated on a substrate. A plastic material is deposited on the graphene layer to at least partially cover the graphene layer. The substrate is separated into at least two substrate pieces. | 2014-09-18 |
20140264256 | THREE DIMENSIONAL RADIOISOTOPE BATTERY AND METHODS OF MAKING THE SAME - According to one embodiment, a product includes an array of three dimensional structures, where each of the three dimensional structure includes a semiconductor material; a cavity region between each of the three dimensional structures; and a first material in contact with at least one surface of each of the three dimensional structures, where the first material is configured to provide high energy particle and/or ray emissions. | 2014-09-18 |
20140264257 | GROUP I-III-VI MATERIAL NANO-CRYSTALLINE CORE AND GROUP I-III-VI MATERIAL NANO-CRYSTALLINE SHELL PAIRING - Nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, and methods of fabricating nano-crystalline core and nano-crystalline shell pairings having group I-III-VI material nano-crystalline cores, are described. In an example, a semiconductor structure includes a nano-crystalline core composed of a group I-III-VI semiconductor material. A nano-crystalline shell composed of a second, different, group I-III-VI semiconductor material at least partially surrounds the nano-crystalline core. | 2014-09-18 |
20140264258 | MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; and two first endcaps, one of which contacts the first end and the other of which contacts the second end respectively of the one-dimensional semiconducting nanoparticle; where the first endcap that contacts the first end comprises a first semiconductor and where the first endcap extends from the first end of the one-dimensional semiconducting nanoparticle to form a first nanocrystal heterojunction; where the first endcap that contacts the second end comprises a second semiconductor; where the first endcap extends from the second end of the one-dimensional semiconducting nanoparticle to form a second nanocrystal heterojunction; and where the first semiconductor and the second semiconductor are chemically different from each other. | 2014-09-18 |
20140264259 | MULTI-HETEROJUNCTION NANOPARTICLES, METHODS OF MANUFACTURE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a semiconducting nanoparticle comprising a one-dimensional semiconducting nanoparticle having a first end and a second end; where the second end is opposed to the first end; a first node that comprises a first semiconductor; where the first node contacts a radial surface of the one-dimensional semiconducting nanoparticle producing a first heterojunction at the point of contact; and a second node that comprises a second semiconductor; where the second node contacts the radial surface of the one-dimensional semiconducting nanoparticle producing a second heterojunction at the point of contact; where the first heterojunction is compositionally different from the second heterojunction. | 2014-09-18 |
20140264260 | LIGHT EMITTING STRUCTURE - The present invention provides a semiconductor column structure which includes a light emitting layer and at least two facets with different crystalline orientations. The surface area ratio of the at least two facets is changed to alter the luminescence properties, such as CCT and CRI. Particularly, the surface area ratio of the at least two facets is adjusted in a range of from 1:0.1 to 1:10. | 2014-09-18 |