38th week of 2009 patent applcation highlights part 36 |
Patent application number | Title | Published |
20090233334 | CELL CULTIVATION AND PRODUCTION OF RECOMBINANT PROTEINS BY MEANS OF AN ORBITAL SHAKE BIOREACTOR SYSTEM WITH DISPOSABLE BAGS AT THE 1,500 LITER SCALE - The present invention provides a novel method for culturing cells as well as a novel method for producing a recombinant protein by culturing cells at large scale (up to 1,500 L nominal volume and 750 L working volume), whereby an inflated bag provides a sterile, disposable cultivation chamber. The inflated bag is partially filled with liquid cultivation media and cells, and placed into a containment vessel. The containment vessel is positioned onto an orbitally shaken platform. The orbital shaking moves the containment vessel and thus the bag and induces thereby motion to the liquid contained therein (“shake mixing”). This motion (caused by orbital shaking) induces a dynamic force field that ensures cell suspension, bulk mixing, and oxygen transfer from the liquid surface to the respiring cells without damaging shear or foam generation. | 2009-09-17 |
20090233335 | Variant humicola Grisea CBH1.1 - Disclosed are variants of | 2009-09-17 |
20090233336 | PROCESS FOR PRODUCING CHONDROITIN - A method for producing a chondroitin (CH) with a desired sugar chain length; a method for producing a fraction containing a CH with a substantially single sugar chain length; etc. There is provided a method for producing a CH with desired sugar chain length, comprising alternately performing the steps (a) allowing a receptor substrate having a glucuronic acid residue at its non-reducing end (when this step is performed after the step (b), sugar chain obtained by the step (b)), an N-acetylgalactosamine donor and an N-acetylgalactosamine transferase to coexist in a reaction system and (b) allowing a receptor substrate having an N-acetylgalactosamine residue at its non-reducing end (when this step is performed after the step (a), sugar chain obtained by the step (a)), a glucuronic acid donor and a glucuronic acid transferase to coexist in a reaction system. | 2009-09-17 |
20090233337 | Chemoenzymatic Process for the Stereoselective Preparation of (R)-Gamma-Amino-Beta-Hydroxybutyric Acid [(R)-GABOB) and (R)-Carnitine - The present invention provides a chemoenzymatic process for the preparation of (R)-GABOB and (R)-carnitine employing lipase-mediated resolution of 3-hydroxy-4-tosyloxybutanenitrile as the key step. The drawing accompanying this specification represents the preparation of racemic 3-hydroxy-4-tosyloxybutanenitrile, its lipase-mediated kinetic resolution and its successful application in the preparation of (R)-GABOB and (R)-carnitine. | 2009-09-17 |
20090233338 | PROCESS FOR RECOVERY OF POLYHYDROXYALKANOATES FROM BIOMASS - Systems and processes for the recovery of polyhydroxyalkanoates (“PHA”) from biomass are disclosed. In certain embodiments, the process includes the steps of extracting at least a portion of PHA from a disrupted quantity of PHA-containing biomass with an acetin solvent to produce a biomass phase (including residual biomass) and a PHA phase including at least a portion of the PHA from the biomass. The biomass phase and the PHA phase are separated, and at least a portion of PHA may be isolated from the PHA phase. Systems and processes including multiple disruption and/or extraction steps also are disclosed. | 2009-09-17 |
20090233339 | SEQUESTRATION OF FORMALDEHYDE TO STABILIZE NITRILASE SPECIFIC ACTIVITY WHEN CONVERTING GLYCOLONITRILE TO GLYCOLIC ACID - A process is provided to improve the specific activity of an enzyme catalyst having nitrilase activity when converting glycolonitrile to glycolic acid under aqueous reaction conditions. Inclusion of an effective amount of at least one amine protectant improves the specific activity and catalytic productivity of the enzyme catalyst. | 2009-09-17 |
20090233340 | Use of erythromycin as a selective antimicrobial agent in the production of alcohols - A process for the use of low concentration levels of Erythromycin to eliminate or control the growth of unwanted or undesirable bacteria (contaminating bacteria) in the fermentation production of alcohols without inhibition of the growth or replication of the yeast. | 2009-09-17 |
20090233341 | PROCESS FOR PRODUCING BIOGAS - A production method of a biogas of the present invention comprises carrying out hydrogen fermentation of a subject solution containing organic matter with the use of a hydrogen fermentation microorganism, in which according to a correlation between a concentration of a predetermined substrate in a liquid to be processed containing an organic matter and a rate of consumption of the substrate by a hydrogen-fermenting microorganism a maximum tolerable concentration of the substrate consumable by the hydrogen-fermenting microorganism is determined in advance and in which in the actual hydrogen formation step, the concentration of the substrate in the liquid is maintained at one not higher than the maximum tolerable concentration. According to the production method of a biogas of the present invention, hydrogen fermentation can be performed sufficiently smoothly without any treatment of the material involving consumption of thermal energy such as heating/warming. | 2009-09-17 |
20090233342 | HETEROLOGOUS EXPRESSION OF PROTEORHODOPSIN PHOTOSYSTEM - The invention relates to functional heterologous expression of proteorhodopsin photosystems in cells and the use of such proteorhodopsin photosystems in methods for increasing energy content of a cell, redirecting carbon flow in a cell, increasing a production of a carbon-based compound in a cell and increasing production of a metabolite in a cell. | 2009-09-17 |
20090233343 | AFFINITY PURIFICATION OF PROTEIN - We describe fusion proteins comprising a bacterial immunity polypeptide and their use in affinity purification of protein complexes. | 2009-09-17 |
20090233344 | PANCREATIN AND METHOD FOR REDUCING THE VIRAL AND MICROBIAL CONTAMINATION OF PANCREATIN - The invention relates to a method for producing pancreatin with reduced viral and microbial contamination, comprising the steps of (a) providing the pancreatin in solid form with a residual moisture of 0.5 weight % or less, down to almost zero, based on the pancreatin provided; (b) subjecting the pancreatin provided in step (a) to a heat treatment at a temperature of 84° C., preferably 80° C. and below; wherein, the biological activity of the pancreatin obtained in step (b) corresponds to at least 50% of the biological activity of the pancreatin provided in step (a); and the viral infectiousness of the pancreatin obtained in step (b) has been reduced by a factor of more than 1 log | 2009-09-17 |
20090233345 | Catalytic domains of beta(1,4)-galactosyl transferase i having altered donor and acceptor specificities, domains that promote in vitro protein folding, and methods for their use - Disclosed are methods and compositions that can be used to synthesize oligosaccharides; mutants of galactosyltransferases having altered donor and acceptor specificity; methods for increasing the immunogenicity of an antigen; and polypeptide stem regions that can be used to promote in vitro folding of polypeptides, such as the catalytic domain from a galactosyltransferase. | 2009-09-17 |
20090233346 | PRODUCTION OF POLYUNSATURATED FATTY ACIDS IN OLEAGINOUS YEASTS - The present invention relates to methods for the production of ω-3 and/or ω-6 fatty acids in oleaginous yeast. Thus, desaturases and elongases able to catalyze the conversion of linoleic acid (LA) to γ-linolenic acid (GLA); α-linoleic acid (ALA) to stearidonic acid (STA); GLA to dihomo-γ-linoleic acid (DGLA); STA to eicosatetraenoic acid (ETA); DGLA to arachidonic acid (ARA); ETA to eicosapentaenoic acid (EPA); DGLA to ETA; EPA to docosapentaenoic acid (DPA); and ARA to EPA have been introduced into the genome of | 2009-09-17 |
20090233347 | PRODUCTION OF POLYUNSATURATED FATTY ACIDS IN OLEAGINOUS YEASTS - The present invention relates to methods for the production of ω-3 and/or ω-6 fatty acids in oleaginous yeast. Thus, desaturases and elongases able to catalyze the conversion of linoleic acid (LA) to γ-linolenic acid (GLA); α-linoleic acid (ALA) to stearidonic acid (STA); GLA to dihomo-γ-linoleic acid (DGLA); STA to eicosatetraenoic acid (ETA); DGLA to arachidonic acid (ARA); ETA to eicosapentaenoic acid (EPA); DGLA to ETA; EPA to docosapentaenoic acid (DPA); and ARA to EPA have been introduced into the genome of | 2009-09-17 |
20090233348 | METHOD FOR ISOLATING PROTEINS FROM PRODUCTION CELLS - A method for the disruption of biological cells by means of a homogenizer device which | 2009-09-17 |
20090233349 | Metal Nanowires With An Oxide Sheath And Production Method For Same - A one-dimensional composite structure which comprises at least one nanowire. The nanowire comprises a metal core and a metal oxide sheath. | 2009-09-17 |
20090233350 | RESPIRATORY APPARATUS WITH A BIOBURDEN INDICATOR - A respiratory apparatus includes a bioburden indicator, having an input valve for the entry of air to be analysed, an element for bioburden analysis, and a suction valve suited to be connected to a suction system to suck up the air to be analysed. | 2009-09-17 |
20090233351 | METHOD FOR CONTROLLING PRESSURE-DIFFERENCE BUBBLE TRANSFER, AND GAS EXCHANGE APPARATUS, ELECTRICAL CONDUCTIVITY MEASURING APPARATUS, TOTAL ORGANIC CARBON MEASURING APPARATUS, REACTOR AND CELL CULTURE APPARATUS USING THE METHOD - In order to control bubble removal or mixing in a flow channel, bubble transfer between flow channels ( | 2009-09-17 |
20090233352 | Method on Clinical Applications in Head Neck Cancer by Using DSG3 Molecule for Predicting Malignant Degree of Cancer, Serving as a Molecular Target and Using RNA Jamming Sequence on Inhibition-Specific of DSG3 Expression - The present invention provide a method for analyzing the DSG3 overexpression in tumor tissues with clinical features of cancer cells to validate that overexpression is relates to size, depth and migration of tumor. Therefore, DSG3 overexpression is capable for using in clinical applications, determining malignant degree of tumor, serving as molecular target in Head Neck Cancer (HNC). Moreover, a jamming sequence, RNA, is designed to act on DSG3 mRNA and is effective inhibition-specific DSG3 expression, and then inhibits cell growth, invasion and migration in HNC. | 2009-09-17 |
20090233353 | MULTIPOTENT ADULT STEM CELLS AND METHODS FOR ISOLATION - The invention provides isolated stem cells of non-embryonic origin that can be maintained in culture in the undifferentiated state or differentiated to form cells of multiple tissue types. Also provided are methods of isolation and culture, as well as therapeutic uses for the isolated cells. | 2009-09-17 |
20090233354 | MULTIPOTENT ADULT STEM CELLS AND METHODS FOR ISOLATION - The invention provides isolated stem cells of non-embryonic origin that can be maintained in culture in the undifferentiated state or differentiated to form cells of multiple tissue types. Also provided are methods of isolation and culture, as well as therapeutic uses for the isolated cells. | 2009-09-17 |
20090233355 | Compositions and methods for culturing embryos and oocytes - The present invention relates to an oocyte and/or embryo culture medium. The medium includes 0.0003 to 750 ng/ml IGF-II, or a variant or analogue thereof, and further includes either or both of 0.01 to 50 μg/ml plasminogen, or a variant or analogue thereof, and 0.01 to 50 μg/ml urokinase plasminogen activator, or a variant or analogue thereof. | 2009-09-17 |
20090233356 | Tissue Engineered Cellular Sheets, Methods of Making and Use Thereof - The disclosure provides methods and compositions to build living tissue covered stents and the like. These tissue coated stents provide a barrier against cell migration to the lumen of the vessel. Since the tissue can surround and envelope the stent, foreign body responses to the stent material are reduced and delayed. The tissue coating is also relatively impermeable to transmural flow, so the wrapped stent can act as a bypass vessel. The tissue is also robust enough to act as a stand alone vessel, without requiring the presence of the metallic stent. These stents can be endothelialized to reduce thrombosis. The genetic modifications described in this disclosure allow for functional organs to be built that express agents that are anti-restenotic or anti-thrombogenic. | 2009-09-17 |
20090233357 | Targeted Delivery of Compounds Using Multimerization Technology - There is disclosed herein subunits and multimers of subunits suitable for use in inducing the transport of one or more cargo substances into a cell and in some instances across a cell. The subunits may have a targeting domain such a antibody or antibody fragment, a multimerization domain, such as a verotoxin B-subunit mutant scaffold, and a cargo molecule such as a drug or imaging agent, which may be directly linked to the subunit or may be packaged in a liposome, nanoparticle, or the like. In some instances the targeting domain may have affinity for a blood-brain barrier antigen and may be capable of inducing cell mediated transcytosis to facilitate delivery of the cargo molecule across the blood-brain barrier. In some instances the targeting region may have affinity for a cancer antigen and may be capable of inducing cell-mediated endocytosis. | 2009-09-17 |
20090233358 | Method of Regulating A Phosphorylated Protein-Mediated Intracellular Signal Transduction Using An Antibody Specifically Binding To The Phosphorylated Protein - There are provided a method of regulating a phosphorylated protein-mediated intracellular signal transduction comprising intracellularly expressing an antibody that specifically binds to the phosphorylated protein and an expression system for intracellular expression of the antibody. The method and system are effectively used in the investigation, prevention, or treatment of diseases caused by a phosphorylated protein-mediated intracellular signal transduction, including prostate cancer, lung cancer and breast cancer, through regulation of a molecular interaction involving a phosphorylated residue of the phosphorylated protein. | 2009-09-17 |
20090233359 | POLYMERS AND COMPLEXES FOR DELIVERY OF NUCLEIC ACIDS TO INTRACELLULAR TARGETS - A complex includes a nucleic acid and a cationic polymer with at least one side chain coupled to the nucleic acid. The at least one side chain including an acid degradable amine-bearing ketal or acetal linkage. | 2009-09-17 |
20090233360 | Methods and Compositions for Culturing of neural Precursor Cells - The present invention provides methods and compositions for the propagation and expansion of neural precursor cells (NPCs). NPCs may be used in the clinical implementation of stem cell therapy to treat disorders such as Parkinson's disease, Huntington's disease, neuropathic pain and other diseases of the central nervous system. The large-scale production of NPCs in bioreactors allows for the generation of clinical quantities of these cells. | 2009-09-17 |
20090233361 | Tissue bioreactor - A bioreactor comprising, two chambers in fluid communication, a tissue matrix held in place between, and separating, the two chambers, each side of the tissue matrix in fluid communication with one of the two chambers, each chamber comprising at least one port. | 2009-09-17 |
20090233362 | Porous Scaffold, Method of Producing the Same and Method of Using the Porous Scaffold - A porous scaffold having pores for seeding cells characterized in that, in the outer peripheral face of the porous main body having the pores for seeding cells, a porous membrane having pores smaller than the cells is located. Thus, it is possible to provide a porous scaffold whereby the cells can be seeded at a high efficiency while preventing cell leakage and, moreover, even cells having little adhesiveness can be adhered. | 2009-09-17 |
20090233363 | Dedifferentiated, Programmable Stem Cells of Monocytic Origin, and Their Production and Use - The invention relates to the production of adult dedifferentiated, programmable stem cells from human monocytes by cultivation of monocytes in a culture medium which contains M-CSF and IL-3. The invention further relates to pharmaceutical preparations, which contain the dedifferentiated, programmable stem cells and the use of these stem cells for the production of target cells and target tissue. | 2009-09-17 |
20090233364 | Method to Engineer MAPK Signaling Responses Using Synthetic Scaffold Interactions and Scaffold-Mediated Feedback Loops - Synthetic scaffold interactions and scaffold-mediated feedback loops are used to engineer MAPK signaling responses in cells. | 2009-09-17 |
20090233365 | ARGININE-CONJUGATED BIOREDUCIBLE POLY(DISULFIDE AMINE) POLYMERS FOR GENE DELIVERY SYSTEMS - An arginine-grafted bioreducible poly(disulfide amine) (“ABP”) as a reagent for efficient and nontoxic gene delivery is described. ABP forms positively charged nano-particles of less than 200 nm with plasmid DNA. ABP is biodegraded under reducing conditions, such as the cytoplasm. ABP exhibits much higher transfection efficiency than polyethyleneimine in mammalian cells and exhibits no cytotoxicity. | 2009-09-17 |
20090233366 | COMPOSITION FOR INTRODUCTION OF NUCLEIC ACID - Composition with weak cytotoxicity for introducing a nucleic acid, such as a short oligonucleotide or a gene, into a cell for expression of the gene in the cell. The composition includes a lipid and a compound represented by a formula (I): | 2009-09-17 |
20090233367 | Method of Transferring Substance Into Cell - There is provided a method by which multiple types of substances desired to be transferred into cells can be continuously transferred into multiple types of cells by a convenient procedure, a cell in which the substance desired to be transferred into cells has been taken up by this method, and an apparatus for transferring a substance into cells by this method. The foregoing objects can be achieved by electrospraying cells with a liquid free from the substance to be transferred into cells while the cells are kept in contact with the substance to be transferred into cells, or first electrospraying cells with a liquid free from the substance to be transferred into cells and then bringing the cells into contact with the substance to be transferred into cells. | 2009-09-17 |
20090233368 | ALLELE SUPPRESSION - A strategy for suppressing expression of one allele of an endogenous gene is provided comprising providing suppression effectors such as antisense nucleic acids able to bind to polymorphisms within or adjacent to a gene such that one allele of a gene is exclusively or preferentially suppressed and if required of a replacement gene can be introduced. | 2009-09-17 |
20090233369 | METHOD FOR IMPROVING CHEMILUMINESCENT SIGNAL - The present invention is directed to compositions and methods for improving a chemiluminescent signal. In particular, a reaction buffer with an alkaline pH range of about 9 to 10 provides a maximal chemiluminescent intensity and longevity of luminol that is catalyzed by superoxide anions. The addition of carbonate to the reaction buffer provides an optimal signal to background ratio and stability of a chemiluminescent signal from luminol catalyzed by superoxide anions. The method includes preparing a buffer with an alkaline pH, combining the buffer with a working reagent to produce and detect a chemiluminescent signal. The working reagent includes luminol, a coumaric acid and a peroxide. The composition includes a buffer having a pH from about 9 to about 10, a stock reagent comprising luminol, a coumaric acid, a peroxide, and a second buffer having a pH of about 8.5. | 2009-09-17 |
20090233370 | METHOD FOR AUTOMATIC ASSAY OF ANIONIC DETERGENTS IN SEAWATER - A method for assaying anionic detergents in seawater comprises: (1) flow a sample through a sample system and an analysis-detection system; flow a reference solution through a reference system, a valve, and the analysis-detection system; where the sample and reference are mixed; and flow the mixture into an optical cell to produce a baseline, (2) flow a sample through the sample system and analysis-detection system; flow a buffer through a buffer system and a color developing system; where the buffer and a color developer are mixed; and flow the resulting mixture through the valve and analysis-detection system; where the sample is mixed with the buffer and developer mixture; and flow the resulting mixture into the cell to produce the sample spectrogram, (3) repeat (1) and (2) with standards of known detergent concentrations for corresponding spectrograms, and (4) compare the sample spectrogram with the standard spectrograms to determine the sample detergent content. | 2009-09-17 |
20090233371 | METHOD OF DETERMINING CYCLIC CARBON CONTENT IN SAMPLE AND METHOD OF DETERMINING CONTENT OF CYCLIC CARBON MATERIAL IN SAMPLE - A method for determining a cyclic carbon content in a sample including burning a sample to generate carbon dioxide gas and measuring a total | 2009-09-17 |
20090233372 | COMPOSITIONS, KITS AND METHODS FOR DETERMINING ETIOLOGY OF TRALI AND DETECTING PATIENTS AT RISK FOR THIS TRANSFUSION REACTION - The instant application is to compositions, kits and methods to determine if a person in need of a blood transfusion is at-risk for TRALI. The invention includes embodiments of methods for testing the priming activity of a blood component or serum or plasma from a patient sustaining TRALI or the priming status of neutrophils of a patient at risk for TRALI by exposing the neutrophils to samples or priming agents, and measuring the respiratory burst in response to an activating agent. The respiratory burst may then be compared to a pre-determined value to find if the patient has abnormally high respiratory burst or the plasma or serum samples have priming activity. The present invention also contemplates kits designed to measure respiratory burst, and compositions/reagents to be used in same. | 2009-09-17 |
20090233373 | MULTISITE PHOSPHORYLATED PEPTIDE (PROTEIN) RECOGNIZING COMPOUND AND DETECTION METHOD, IMAGING METHOD, ALZHEIMER'S DISEASE DIAGNOSING METHOD AND REAGENT KIT USING THE SAME - There are provided a novel compound which captures a multisite phosphorylated peptide or protein specifically to a phosphorylation site and a method for detecting a multisite phosphorylated peptide or protein using the same. In particular, there are provided a compound which specifically detects an excessively phosphorylated tau protein observed in the brain affected by Alzheimer's disease and a method for diagnosing Alzheimer's disease in vitro or in vivo using the compound. By bringing a metal complex compound having two dipicolylamine (Dpa) moieties and a spacer including a chromogenic or luminescent functional group or atom group into contact with a multisite phosphorylated peptide or protein, the compound recognizes the distance between phosphate groups and specifically binds to the peptide or the protein, and a multisite phosphorylated peptide or protein or a kinase activity is optically detected by measuring the change, or a multisite phosphorylated peptide or protein or kinase activity is imaged by an optical imaging method applying the change in the luminescence. | 2009-09-17 |
20090233374 | Flourescent organic nanofibrils as sensory materials for explosives detection - The present invention relates to a class of fluorescent, organic nanofibrils, and particularly the films comprising entangled piling of these nanofibrils exhibiting effective quenching of their fluorescence upon exposure the vapor of explosives. The invention also relates to a sensor and a method for sensing the explosives vapor and other volatile organic compounds, including the explosives taggants through the modulation of the fluorescence of the nanofibril film and the electrical conductivity of the nanofibrils. The invention also relates to a development of synthetic methods, protocols and techniques that leads to production of various arylene-ethynylene macrocycle (AEM) molecules, which consist of a shape-persistent, toroidal scaffold in planar conformation, with minimal ring strain and highly tunable ring sizes (from 0.5 nm to above 10 nm). The invention also relates to an approach to optimization of the one-dimensional molecular arrangement along the long axis of the nanofibril, which provides increased exciton (excited state) migration (via cofacial intermolecular electronic coupling) and charge transport (via pi-electronic delocalization). A combination of long-range exciton migration and efficient charge transport makes the nanofibrils ideal as sensory materials for detecting explosives and other volatile organic compounds through both optical and electrical sensing mechanisms. | 2009-09-17 |
20090233375 | Thermal bath systems and thermally-conductive particulate thermal bath media and methods - Thermally-conductive laboratory bath media can be used to replace conventional wet media or dry solid blocks in existing thermal baths for heating or cooling samples with advantageous maintenance and microbial control benefits. The media is typically in the form of metallic or metallic-coated pellets that have rounded edges, hardened surface, a smooth polished finish, and are sized small for efficient thermal communication between pellets and samples. Laboratory bath improvements are disclosed with various advanced controls and adaptations for thermal control as well as infection control. | 2009-09-17 |
20090233376 | URINE GENDER TEST KIT - A kit for determining the gender of an unborn fetus. The kit comprises a container holding a solid composition therein, the solid composition including a basic salt and a transition metal. An atmosphere in the container is substantially free of water. | 2009-09-17 |
20090233377 | MICROPARTICLE-PROTEIN COMPLEX, METHOD FOR PRODUCTION OF THE COMPLEX, SEMICONDUCTOR DEVICE, AND FLUORESCENT LABELING METHOD - First, an ammonium acetate solution and an acetate solution of a metal such as Cd or Zn are mixed, so as to form an ammonium complex of the metal. Next, an apoferritin solution and thioacetic acid are added to the thus obtained reaction solution. By allowing the reaction solution to stand for 12 hours or more, a complex of a nanoparticle including CdS or ZnS and apoferritin is produced. | 2009-09-17 |
20090233378 | Method of Reaction in Flow Channel of Microchip and Analysis Device - In case of performing a reaction between reacting material and reagent by bringing the reagent in contact with the reacting material through flowing the reagent into a reaction flow channel in which the reaction material which reacts with the reagent is carried on a wall surface of the reaction flow channel of a microchip, the reaction is expedited efficiently by passing the reagent to the reacting material. The reagent | 2009-09-17 |
20090233379 | Taste Receptors Of The T1R Family From Domestic Dog - The present invention relates to the discovery of several genes of the domestic dog ( | 2009-09-17 |
20090233380 | Methods and Compositions of Conjugating Gold to Biological Molecules - The present application describes methods for conjugating gold to biological molecules and conjugates resulting from the same. The method provides superior gold conjugated biomolecules with higher sensitivity than those made from conventional gold conjugation methods. | 2009-09-17 |
20090233381 | Interconnect For a GMR Memory Cells And An Underlying Conductive Layer - A conductive plug located in a planar dielectric layer, under GMR memory cells, are used to directly connect the lower ferromagnetic layer of one of the GMR memory cell and a conductive layer under the planar dielectric layer. | 2009-09-17 |
20090233382 | High Polarization Ferroelectric Capacitors for Integrated Circuits - One aspect of the invention relates to a method of manufacturing an integrated circuit comprising forming an array of ferroelectric memory cells on a semiconductor substrate, heating the substrate to a temperature near a Curie temperature of the ferroelectric cores, and subjecting the substrate to a temperature program, whereby thermally induced stresses on the ferroelectric cores cause a switched polarization of the cores to increase by at least about 25% as the cores cool to about room temperature. Embodiments of the invention include metal filled vias of expanded cross-section above and below the ferroelectric cores, which increase the thermal stresses on the ferroelectric cores during cooling. | 2009-09-17 |
20090233383 | Plasma Doping Method and Apparatus - It is intended to provide a plasma doping method and apparatus which are superior in the controllability of the concentration of an impurity that is introduced into a surface layer of a sample. | 2009-09-17 |
20090233384 | METHOD FOR MEASURING DOPANT CONCENTRATION DURING PLASMA ION IMPLANTATION - Embodiments of the invention generally provide methods for end point detection at predetermined dopant concentrations during plasma doping processes. In one embodiment, a method includes positioning a substrate within a process chamber, generating a plasma above the substrate and transmitting a light generated by the plasma through the substrate, wherein the light enters the topside and exits the backside of the substrate, and receiving the light by a sensor positioned below the substrate. The method further provides generating a signal proportional to the light received by the sensor, implanting the substrate with a dopant during a doping process, generating multiple light signals proportional to a decreasing amount of the light received by the sensor during the doping process, generating an end point signal proportional to the light received by the sensor once the substrate has a final dopant concentration, and ceasing the doping process. | 2009-09-17 |
20090233385 | Plasma Doping Method and Plasma Doping Apparatus - Before a plasma doping process is performed, there is generated a plasma of a gas containing an element belonging to the same group in the periodic table as the primary element of a silicon substrate | 2009-09-17 |
20090233386 | METHOD FOR FORMING AN INK JETTING DEVICE - A method for forming an ink jetting device includes providing a silicon substrate having a first surface having formed thereon a plurality of electrical heater elements to form a first upper exposed surface; depositing a polymer over the first upper exposed surface to form a sacrificial polymer layer; patterning the sacrificial polymer layer to form a second exposed upper surface; depositing a conformal material over the second exposed upper surface to form a conformal nozzle layer; patterning the conformal nozzle layer to form a plurality of nozzle holes located over the electrical heater elements; patterning a mask layer to form an exposed region of the second surface of the silicon substrate that defines a location of a central ink via; etching the exposed region to form the central ink via; and removing a portion of a remainder of the polymer layer to form ink ejection chambers. | 2009-09-17 |
20090233387 | LINEAR PLASMA SOURCE FOR DYNAMIC (MOVING SUBSTRATE) PLASMA PROCESSING - The present invention generally relates to a method and apparatus for depositing a layer onto a substrate as the substrate is moving through the processing chamber. The substrate may move along a roll to roll system. A roll to roll system is a system where a substrate may be unwound from a first roll so that the substrate may undergo processing and then re-wound onto a second roll after the processing. As the substrate moves through the processing chamber, a plasma source may produce a plasma. An electrical bias applied to the substrate may draw the plasma to the substrate and hence, permit deposition of material onto the substrate as the substrate moves through the chamber. | 2009-09-17 |
20090233388 | Manufacturing method of electro line for liquid crystal display device - A manufacturing method of an electro line for a liquid crystal display device includes depositing a barrier layer made of a conducting material on a substrate, depositing a copper layer (Cu) on the barrier layer, wet-etching the Cu layer using a first etchant, and dry-etching the barrier layer using a second etchant using the wet-etched Cu layer as an etch mask. | 2009-09-17 |
20090233389 | METHOD FOR MANUFACTURING THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A method for manufacturing a thin film transistor and a display device using a small number of masks is provided. A conductive film is formed, a thin-film stack body having a pattern is formed over the conductive film, an opening portion is formed in the thin-film stack body so as to reach the conductive film, a gate electrode layer is formed by processing the conductive film using side-etching, and an insulating layer, a semiconductor layer, and a source and drain electrode layer are formed over the gate electrode layer, whereby a thin film transistor is manufactured. By provision of the opening portion, controllability of etching is improved. | 2009-09-17 |
20090233390 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - The light emitting device according to the present invention is characterized in that a gate electrode comprising a plurality of conductive films is formed, and concentrations of impurity regions in an active layer are adjusted with making use of selectivity of the conductive films in etching and using them as masks. The present invention reduces the number of photolithography steps in relation to manufacturing the TFT for improving yield of the light emitting device and shortening manufacturing term thereof, by which a light emitting device and an electronic appliance are inexpensively provided. | 2009-09-17 |
20090233391 | Liquid crystal display device and method of fabricating the same - A liquid crystal display device includes a plurality of gate lines and data lines crossing each other to define a plurality of pixel regions, a plurality of thin film transistors, each disposed in one of the pixel regions, and a plurality of pixel electrodes, each disposed in one of the pixel regions, wherein the thin film transistor includes at least one Ti layer. | 2009-09-17 |
20090233392 | Liquid crystal display device and fabrication method thereof - Disclosed is a liquid crystal display (LCD) device having gate and data driving elements with improved heat dissipation properties. The driving elements each have the following: a source and a drain electrode, each with contact holes that provide electrical contact with an active area formed on the driving element's substrate; multiple separate channels between the source and the drain; and a gate electrode formed crossing the multiple channels. Also formed are dummy contact holes that allow the metal of the electrodes to penetrate to a layer below the active layer without contacting it. The dummy contact hole provides a thermally conductive channel whereby heat that would otherwise build up in the channels, and degrade the performance of the driving element, is conducted through the dummy contact hole and radiated away by the electrode metal. | 2009-09-17 |
20090233393 | LIQUID CRYSTAL DISPLAY WITH WIDE VIEWING ANGLE WITH OVERLAPPING COUPLING ELECTRODES FORMING CAPACITOR INTERCONNECTING SUB-PIXEL ELECTRODES - A method of manufacturing an active matrix substrate is presented. The method includes forming a transistor having a gate line, a semiconductor layer, an insulating layer between the gate line and the semiconductor layer, a source electrode, and a drain electrode; forming a pixel electrode comprising a first sub-pixel electrode and a second sub-pixel electrode; forming an auxiliary coupling electrode connected to the second sub-pixel electrode through a first contact hole; and forming the first sub-pixel electrode through a second contact hole connected to the drain electrode of the transistor. The auxiliary coupling electrode and the first sub-pixel electrode overlap each other such that the second sub-pixel electrode is capacitively coupled to the first sub-pixel electrode and the auxiliary coupling electrode and the electrode part form a capacitor. | 2009-09-17 |
20090233394 | Led with substrate modifications for enhanced light extraction and method of making same - The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. Etched features, such as truncated pyramids, may be formed on the emitting surface, prior to the RIE process, by cutting into the surface using a saw blade or a masked etching technique. Sidewall cuts may also be made in the emitting surface prior to the RIE process. A light absorbing damaged layer of material associated with saw cutting is removed by the RIE process. The surface morphology created by the RIE process may be emulated using different, various combinations of non-RIE processes such as grit sanding and deposition of a roughened layer of material or particles followed by dry etching. | 2009-09-17 |
20090233395 | Package of MEMS device and method for fabricating the same - A package of a micro-electro-mechanical systems (MEMS) device includes a cap wafer, a plurality of bonding bumps formed over the cap wafer, a plurality of array bumps arrayed on an outer side of the bonding bumps, and an MEMS device wafer over which a plurality of first outer pads are formed corresponding to the array bumps, wherein the array bumps are bonded to the respective outer pads when the cap wafer and the MEMS device wafer are bonded together. | 2009-09-17 |
20090233396 | FLOATING SHEET PRODUCTION APPARATUS AND METHOD - This sheet production apparatus comprises a vessel defining a channel configured to hold a melt. The melt is configured to flow from a first point to a second point of the channel. A cooling plate is disposed proximate the melt and is configured to form a sheet on the melt. A spillway is disposed at the second point of the channel. This spillway is configured to separate the sheet from the melt. | 2009-09-17 |
20090233397 | Method and apparatus for forming the separating lines of a photovoltaic module with series-connected cells - For forming the separating lines, ( | 2009-09-17 |
20090233398 | METHODS FOR FORMING PARTICLES FROM SINGLE SOURCE PRECURSORS, METHODS OF FORMING SEMICONDUCTOR DEVICES, AND DEVICES FORMED USING SUCH METHODS - Single source precursors are subjected to carbon dioxide to form particles of material. The carbon dioxide may be in a supercritical state. Single source precursors also may be subjected to supercritical fluids other than supercritical carbon dioxide to form particles of material. The methods may be used to form nanoparticles. In some embodiments, the methods are used to form chalcopyrite materials. Devices such as, for example, semiconductor devices may be fabricated that include such particles. Methods of forming semiconductor devices include subjecting single source precursors to carbon dioxide to form particles of semiconductor material, and establishing electrical contact between the particles and an electrode. | 2009-09-17 |
20090233399 | METHOD OF MANUFACTURING PHOTOELECTRIC DEVICE - In a method of manufacturing a photoelectric device, a transparent conductive layer is formed on a substrate, and the transparent conductive layer is partially etched using an etching solution including hydrofluoric acid. Thus, a transparent electrode having a concavo-convex pattern on its surface is formed. When the transparent conductive layer is partially etched, a haze of the transparent electrode may be controlled by adjusting an etching time of the transparent conductive layer. Also, since the etching solution is sprayed to the transparent conductive layer to etch the transparent conductive layer, the concavo-convex pattern on the surface of the transparent electrode may be easily formed even though the size of the substrate increases. | 2009-09-17 |
20090233400 | Rigid-flexible printed circuit board manufacturing method for package on package - A manufacturing method for rigid-flexible multi-layer printed circuit board including: a flexible substrate of which circuits are formed on both sides and which is bendable; a rigid substrate which is laminated on the flexible substrate and circuits are formed on both sides and a cavity within which a semiconductor chip is mounted is formed; and a bonding sheet adhering the flexible substrate and the rigid substrate and having a insulating property. When the same numbers of the semiconductor chips are mounted or the POP is embodied, the whole thickness of the package can be lower. Also, two more semiconductor chips can be mounted using the space as the thickness of the core layer, and the structure impossible when the number of semiconductor chip mounted on the bottom substrate becomes two from one in conventional technology can be embodied. | 2009-09-17 |
20090233401 | THIN QUAD FLAT PACKAGE WITH NO LEADS (QFN) FABRICATION METHODS - Embodiments of the present invention include a method of packaging semiconductor devices. The method comprises the steps of molding a surface of a wafer, sawing the wafer into individual devices, attaching the individual semiconductor device to an adhesive surface, molding the exposed surface, and sawing the wafer into individual semiconductor devices. The step of molding forms a continuous molded layer. The step of sawing results in each individual semiconductor having a molded layer. This molded layer corresponds to a portion of the continuous molded layer. The step of attaching includes attaching the molded layer of the individual semiconductor devices to the adhesive surface. The step of molding the exposed area includes molding an exposed area above the adhesive surface. This forms a solid expanse of material. The step of sawing the wafer into individual semiconductor devices includes sawing the solid expanse of material. | 2009-09-17 |
20090233402 | WAFER LEVEL IC ASSEMBLY METHOD - A wafer level integrated circuit assembly method is conducted as follows. First, a mother device wafer with plural first posts is provided. The first posts are used for electrical connection and are made of copper according to an embodiment. Solder is sequentially formed on the first posts. The solder is preferably pre-formed on a wafer, and the locations of the solder correspond to the first posts of the mother device wafer. Consequently, the solder can be formed on or adhered to the first posts by placing the wafer having pre-formed solder onto the first posts. Plural dies having plural second posts corresponding to the first posts are placed onto the mother device wafer. Then, the solder is reflowed to bond the first and second posts, and the mother device wafer is diced. | 2009-09-17 |
20090233403 | DUAL FLAT NON-LEADED SEMICONDUCTOR PACKAGE - A DFN semiconductor package includes a leadframe having a die bonding pad formed integrally with a drain lead, a gate lead and a source lead, a die coupled to the die bonding pad, a die source bonding area coupled to the source lead and a die gate bonding area coupled to the gate lead, and an encapsulant at least partially covering the die, drain lead, gate lead and source lead. | 2009-09-17 |
20090233404 | FABRICATION METHOD OF MULTI-DOMAIN VERTICAL ALIGNMENT PIXEL STRUCTURE - A fabrication method of a multi-domain vertical alignment pixel structure includes providing a substrate, forming a gate on the substrate, and forming an insulating layer on the substrate. A channel layer and a semiconductor layer are formed on the insulating layer. A source, a drain, and a capacitor-coupling electrode are formed. A passivation layer is formed to cover the source, the drain, a part of the channel layer, and a part of the semiconductor layer. A via hole is formed in the passivation layer to expose the drain, and a trench is formed in the passivation layer and the insulating layer. A lateral etched groove on the sidewall of the trench is formed to expose the side edge of the semiconductor layer. A first pixel electrode and a second pixel electrode are formed on the passivation layer at both sides of the trench, respectively. | 2009-09-17 |
20090233405 | METHODS OF FORMING NAND-TYPE NONVOLATILE MEMORY DEVICES - Methods of forming a NAND-type nonvolatile memory device include: forming first common drains and first common sources alternatively in an active region which is defined in a semiconductor substrate and extends one direction, forming a first insulating layer covering an entire surface of the semiconductor substrate, patterning the first insulating layer to form seed contact holes which are arranged at regular distance and expose the active region, forming a seed contact structure filling each of the seed contact holes and a semiconductor layer disposed on the first insulating layer and contacting the seed contact structures, patterning the semiconductor layer to form a semiconductor pattern which extends in the one direction and is disposed over the active region, forming second common drains and second common sources disposed alternatively in the semiconductor pattern in the one direction, forming a second insulating layer covering an entire surface of the semiconductor substrate, forming a source line pattern continuously penetrating the second insulating layer, the semiconductor pattern and the first insulating layer, the source line pattern being connected with the first and second common sources, wherein a grain boundary of the semiconductor layer is positioned at a center between the one pair of seed contact structures adjacent to each other, and is positioned over the first common drain or the first common source. | 2009-09-17 |
20090233406 | METHOD FOR FABRICATING SEMICONDUCTOR MEMORY DEVICE - A method of fabricating a semiconductor memory device to protect a tunneling insulating layer from etching-damage includes the steps of forming sequentially a tunnel insulating layer, a first conductive layer, a dielectric layer and a second conductive layer on a semiconductor substrate; etching the second conductive layer, the dielectric layer and the first conductive layer to form gate patterns, the first conductive layer remaining on the tunnel insulating layer between the gate patterns to prevent the tunnel insulating layer from being exposed; performing a cleaning process to remove impurities generated in the etching step; performing an ion implanting process to mono-crystallize the first conductive layer remaining on the tunnel insulating layer; and performing an oxidation process to form an oxide layer on top and side walls of the gate patterns and to convert the mono-crystallized first conductive layer into an insulating layer. | 2009-09-17 |
20090233407 | Method of fabricating a high-voltage transistor with an extended drain structure - A method for fabricating a high-voltage transistor with an extended drain region includes forming in a semiconductor substrate of a first conductivity type, first and second trenches that define a mesa having respective first and second sidewalls; then partially filling each of the trenches with a dielectric material that covers the first and second sidewalls. The remaining portions of the trenches are then filled with a conductive material to form first and second field plates. Source and body regions are formed in an upper portion of the mesa, with the body region separating the source from a lower portion of the mesa. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims. | 2009-09-17 |
20090233408 | Semiconductor device manufacturing method - A method of manufacturing a semiconductor device having a polycrystalline silicon layer ( | 2009-09-17 |
20090233409 | METHOD FOR PRODUCTION OF SEMICONDUCTOR DEVICE - A method for producing a semiconductor device, the method includes the steps of: forming a hard mask layer with a mask opening on a semiconductor substrate in which is formed a source region; forming a side wall mask on the side wall of the mask opening; forming a trench by using the side wall mask and the hard mask layer as a mask in such a way that the trench reaches the source region; removing the side wall mask; forming a gate electrode inside the mask opening and the trench, with a gate insulating film interposed thereunder; forming a side wall on the side wall of the gate electrode; and forming a drain region on the surface of the semiconductor substrate which is adjacent to the gate electrode. | 2009-09-17 |
20090233410 | Self-Aligned Halo/Pocket Implantation for Reducing Leakage and Source/Drain Resistance in MOS Devices - A method of forming a semiconductor structure includes providing a semiconductor substrate; forming a gate dielectric over the semiconductor substrate, wherein the semiconductor substrate and a sidewall of the gate dielectric has a joint point; forming a gate electrode over the gate dielectric; forming a mask layer over the semiconductor substrate and the gate electrode, wherein a first portion of the mask layer adjacent the joint point is at least thinner than a second portion of the mask layer away from the joint point; after the step of forming the mask layer, performing a halo/pocket implantation to introduce a halo/pocket impurity into the semiconductor substrate; and removing the mask layer after the halo/pocket implantation. | 2009-09-17 |
20090233411 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A semiconductor device includes a side wall spacer formed on the side surface of a gate electrode formed on the upper side of a semiconductor substrate with a gate insulation film therebetween, extension regions built up on the semiconductor substrate, and source/drain regions formed on the extension regions, wherein a first epitaxial layer is formed so as to fill up portions, cut out at the time of forming the side wall spacer, of the semiconductor substrate, and the extension regions are formed on the first epitaxial layer from a second epitaxial layer of a conduction type opposite to that of the first epitaxial layer. | 2009-09-17 |
20090233412 | METHOD FOR ANGULAR DOPING OF SOURCE AND DRAIN REGIONS FOR ODD AND EVEN NAND BLOCKS - Stacked gate structures for a NAND string are created on a substrate. Source implantations are performed at a first implantation angle to areas between the stacked gate structures. Drain implantations are performed at a second implantation angle to areas between the stacked gate structures. The drain implantations create lower doped regions of a first conductivity type in the substrate on drain sides of the stacked gate structures. The source implantations create higher doped regions of the first conductivity type in the substrate on source sides of the stacked gate structures. | 2009-09-17 |
20090233413 | Method for fabricating semiconductor device - A method for fabricating a semiconductor device using a SOI substrate, includes the steps of: preparing a SOI substrate, comprises a semiconductor support layer; an insulating layer formed on the semiconductor support layer; and a SOI layer formed on the insulating layer; forming an active region on the SOI layer, so that a part of the semiconductor support layer is exposed; and forming a specific mark on the exposed part of the semiconductor support layer. | 2009-09-17 |
20090233414 | Method for fabricating group III-nitride high electron mobility transistors (HEMTs) - A method of manufacturing a transistor comprises providing a wafer; growing a group III-nitride semiconductor material on a first side of the wafer; creating alignment marks on a second side of the wafer, the second side of the wafer being positioned opposite to the first side of the wafer; etching the first side of the wafer to create free standing walls on the first side of the wafer; growing pendeo-epitaxy regrowth regions on the free standing walls; and forming mesa isolated regions in the pendeo-epitaxy regrowth regions. The method may further comprise positioning a patterned mask on the first side of the wafer; and aligning the patterned mask with the alignment marks located on the second side of the wafer. | 2009-09-17 |
20090233415 | Semiconductor Devices with Sealed, Unlined Trenches and Methods of Forming Same - A semiconductor device includes unlined and sealed trenches and methods for forming the unlined and sealed trenches. More particularly, a superjunction semiconductor device includes unlined, and sealed trenches. The trench has sidewalls formed of the semiconductor material. The trench is sealed with a sealing material such that the trench is air-tight. First and second regions are separated by the trench. The first region may include a superjunction Schottky diode or MOSFET. In an alternative embodiment, a plurality of regions are separated by a plurality of unlined and sealed trenches. | 2009-09-17 |
20090233416 | FLASH MEMORY DEVICES COMPRISING PILLAR PATTERNS AND METHODS OF FABRICATING THE SAME - Flash memory devices include pillar patterns formed between selected pairs of floating gates and control gate extensions that penetrate between selected pairs of floating gates are provided. Methods of fabricating the flash memory devices are also provided. | 2009-09-17 |
20090233417 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The manufacturing method includes attaching a single crystal semiconductor layer to a supporting substrate, detecting a position of a deficiency region in the single crystal semiconductor layer, forming a non-single-crystal semiconductor layer over the single crystal semiconductor layer, selectively improving crystallinity of a portion of the non-single-crystal semiconductor layer based on the position of the deficiency region, the portion being overlapped with the deficiency region, and planarizing the non-single-crystal semiconductor layer over the supporting substrate. | 2009-09-17 |
20090233418 | Methods of Processing Semiconductor Wafers Having Silicon Carbide Power Devices Thereon - Methods of forming a silicon carbide semiconductor device are disclosed. The methods include forming a semiconductor device at a first surface of a silicon carbide substrate having a first thickness, and mounting a carrier substrate to the first surface of the silicon carbide substrate. The carrier substrate provides mechanical support to the silicon carbide substrate. The methods further include thinning the silicon carbide substrate to a thickness less the first thickness, forming a metal layer on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate, and locally annealing the metal layer to form an ohmic contact on the thinned silicon carbide substrate opposite the first surface of the silicon carbide substrate. The silicon carbide substrate is singulated to provide a singulated semiconductor device. | 2009-09-17 |
20090233419 | OPTICAL DEVICE MANUFACTURING METHOD - An optical device manufacturing method including the steps of: forming a groove with a depth corresponding to a finish thickness of the heat sink in a heat sink material at a position corresponding to an associated one of the streets sectioning the plurality of optical devices; joining the optical device layer of the optical device wafer to the heat sink material via a joining metal layer; cutting and dividing the optical device wafer along the streets into individual optical devices; sticking a protection member to the rear surface of the substrate of the optical device wafer; and grinding the rear surface of the heat sink material to expose the grooves to the rear surface to thereby divide the heat sink material into heat sinks corresponding to associated individual optical devices. | 2009-09-17 |
20090233420 | P-TYPE SILICON WAFER AND METHOD FOR HEAT-TREATING THE SAME - This p-type silicon wafer was subjected to heat treatment to have a resistivity of 10 Ω·cm or more, a BMD density of 5×10 | 2009-09-17 |
20090233421 | Methods of Fabricating Semiconductor Device Including Phase Change Layer - Provided are methods of fabricating a semiconductor device including a phase change layer. Methods may include forming a dielectric layer on a substrate, forming an opening in the dielectric layer and depositing, on the substrate having the opening, a phase change layer that contains an element that lowers a process temperature of a thermal treatment process to a temperature that is lower than a melting point of the phase change layer. Methods may include migrating a portion of the phase change layer from outside the opening, into the opening by the thermal treatment process that includes the process temperature that is lower than the melting point of the phase change layer. | 2009-09-17 |
20090233422 | SWITCHABLE MEMORY DIODE - A NEW MEMORY DEVICE - Systems and methodologies are provided for forming a diode component integral with a memory cell to facilitate programming arrays of memory cells created therefrom. Such a diode component can be part of a PN junction of memory cell having a passive and active layer with asymmetric semiconducting properties. Such an arrangement reduces a number of transistor-type voltage controls and associated power consumption, while enabling individual memory cell programming as part of a passive array. Moreover, the system provides for an efficient placement of memory cells on a wafer surface, and increases an amount of die space available for circuit design. | 2009-09-17 |
20090233423 | METHOD OF MANUFACTURING NITRIDE SEMICONDUCTOR SUBSTRATE - A method for manufacturing a nitride semiconductor substrate including the steps of: forming a nitride semiconductor layer on a sapphire substrate, and manufacturing a freestanding nitride semiconductor substrate by using the nitride semiconductor layer separated from the sapphire substrate, wherein variability of inclinations of the C-axes, being a difference between a maximum value and a minimum value of inclination of the C-axes in a radially-outward direction at each point on a front surface of the sapphire substrate is 0.3° or more and 1° or less. | 2009-09-17 |
20090233424 | THIN FILM METAL OXYNITRIDE SEMICONDUCTORS - The present invention generally relates to a semiconductor film and a method of depositing the semiconductor film. The semiconductor film comprises oxygen, nitrogen, and one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin. Additionally, the semiconductor film may be doped. The semiconductor film may be deposited by applying an electrical bias to a sputtering target comprising the one or more elements selected from the group consisting of zinc, cadmium, gallium, indium, and tin, and introducing a nitrogen containing gas and an oxygen containing gas. The sputtering target may optionally be doped. The semiconductor film has a mobility greater than amorphous silicon. After annealing, the semiconductor film has a mobility greater than polysilicon. | 2009-09-17 |
20090233425 | PLASMA PROCESSING APPARATUS AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - By an evacuation unit including first and second turbo molecular pumps connected in series, the ultimate pressure in a reaction chamber is reduced to ultra-high vacuum. By a knife-edge-type metal-seal flange, the amount of leakage in the reaction chamber is reduced. A microcrystalline semiconductor film and an amorphous semiconductor film are stacked in the same reaction chamber where the pressure is reduced to ultra-high vacuum. By forming the amorphous semiconductor film covering the surface of the microcrystalline semiconductor film, oxidation of the microcrystalline semiconductor film is prevented. | 2009-09-17 |
20090233426 | METHOD OF FORMING A PASSIVATED DENSIFIED NANOPARTICLE THIN FILM ON A SUBSTRATE - A method for forming a passivated densified nanoparticle thin film on a substrate in a chamber is disclosed. The method includes depositing a nanoparticle ink on a first region on the substrate, the nanoparticle ink including a set of Group IV semiconductor particles and a solvent. The method also includes heating the nanoparticle ink to a first temperature between about 30° C. and about 400° C., and for a first time period between about 1 minute and about 60 minutes, wherein the solvent is substantially removed, and a porous compact is formed. The method further includes flowing an oxidizer gas into the chamber; and heating the porous compact to a second temperature between about 600° C. and about 1000° C., and for a second time period of between about 5 seconds and about 1 hour; wherein the passivated densified nanoparticle thin film is formed. | 2009-09-17 |
20090233427 | PLASMA DOPING METHOD - An impurity region is formed in a surface of a substrate by exposing the substrate to a plasma generated from a gas containing an impurity in a vacuum chamber. In this process, a plasma doping condition is set with respect to a dose of the impurity to be introduced into the substrate so that a first one of doses in a central portion and in a peripheral portion of the substrate is greater than a second one of the doses during an initial period of doping, with the second dose becoming greater than the first dose thereafter. | 2009-09-17 |
20090233428 | Methods for preparing a semiconductor wafer with high thermal conductivity - This invention generally relates to an epitaxial silicon semiconductor wafer with increased thermal conductivity to transfer heat away from a device layer, while also having resistance to common failure mechanisms, such as latch-up failures and radiation event failures. The semiconductor wafer comprises a lightly-doped device layer, a highly-doped protective layer, and a lightly-doped substrate. The invention is also directed to a process for forming such an epitaxial silicon wafer. | 2009-09-17 |
20090233429 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SUBSTRATE PROCESSING APPARATUS - Nitrogen supplied into the high dielectric constant film is prevented from leaving from the film. | 2009-09-17 |
20090233430 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD, SEMICONDUCTOR DEVICE MANUFACTURING APPARATUS, AND SEMICONDUCTOR DEVICE MANUFACTURING SYSTEM - Provided is a method of forming a high-k gate insulating film to reduce nitrogen leakage and suppress gate leakage current. A method of manufacturing a semiconductor device comprises: forming a high-k gate insulating film on a silicon substrate in a first process unit; carrying the silicon substrate to a second process unit; nitrogenizing the high-k gate insulating film using gas comprising nitrogen gas and rare gas; and annealing the silicon substrate in the second process unit. | 2009-09-17 |
20090233431 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND A METHOD OF MANUFACTURING THE SAME - Manufacturing technique for an IC device which includes forming the first conductor film over a memory cell forming region and over a peripheral circuit forming region of a semiconductor substrate, patterning the first conductive film lying over the memory cell forming region to form a first conductive pattern which serves as a first or control gate electrode of a memory cell and leaving the first conductive film over the peripheral circuit forming region, forming a second conductive film over both the memory cell forming region and the first conductive film in the peripheral circuit forming region, etching the second conductive film to form a second or memory gate electrode of the memory cell on at least a side wall of the first conductive pattern, and followed by the formation of a gate electrode of a peripheral circuit transistor by etching the first conductive film in the peripheral circuit forming region. | 2009-09-17 |
20090233432 | METHODS FOR FABRICATING FLASH MEMORY DEVICES - Methods for fabricating flash memory devices are disclosed. A disclosed method comprises: forming a polysilicon layer on a semiconductor substrate; injecting dopants having stepped implantation energy levels into the polysilicon layer; forming a photoresist pattern on the polysilicon layer; and etching the polysilicon layer to form a floating gate. | 2009-09-17 |
20090233433 | Semiconductor device having silicon layer in a gate electrode - A method for forming a semiconductor device includes, in order, consecutively depositing a gate insulating film and a silicon layer on a semiconductor substrate, implanting boron into the silicon layer, diffusing the boron by heat-treating the silicon layer, implanting phosphorous into the silicon layer, diffusing at least the phosphorous by heat-treating the silicon layer, and patterning the silicon layer by using a dry etching technique. | 2009-09-17 |