37th week of 2021 patent applcation highlights part 60 |
Patent application number | Title | Published |
20210288215 | ELECTROLUMINESCENT DISPLAY PANEL AND DISPLAY DEVICE - An electroluminescent display panel and a display device are provided. In the embodiments of the disclosure, a photosensitive component is arranged in the photosensitive component arranging region. The extending line of at least one line is arranged in the photosensitive component arranging region so that the orthographic projection of the extending line on the light-emitting surface of the electroluminescent display panel overlaps with the first pixels in the first and second specific pixel groups in the photosensitive component arranging area; the first and second specific pixel groups include respective first pixels located in first straight lines of the second pixels correspondingly connected to two adjacent signal lines, the first and second specific pixel groups are adjacent in the second direction, and the first straight lines extend in the first direction. | 2021-09-16 |
20210288216 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT - A semiconductor light-emitting element according to the present invention includes an n-type semiconductor layer, an active layer, a p-type semiconductor layer, and a p-electrode. The n-type semiconductor layer has a composition of AlGaN or AlInGaN. The active layer is formed on the n-type semiconductor layer. The active layer contains an AlGaN semiconductor or an AlInGaN semiconductor. The p-type semiconductor layer is formed on the active layer. The p-type semiconductor layer has a composition of AlN, AlGaN, or AlInGaN. The p-electrode is formed on the p-type semiconductor layer. The p-type semiconductor layer includes a contact layer formed on the p-electrode. The contact layer includes an AlGaN layer or an AlInGaN layer in which a band gap decreases toward an interface with the p-electrode. The contact layer includes a tunneling contact layer in contact with the p-electrode. The tunneling contact layer is connected to the p-electrode by a tunnel junction. | 2021-09-16 |
20210288217 | LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREFOR, AND DISPLAY DEVICE COMPRISING SAME - A light emitting device may include: a substrate including emission areas; a first electrode disposed on the substrate, and a second electrode spaced apart from the first electrode; at least one light emitting element disposed on the substrate, and including a first end and a second end; an insulating layer disposed on the light emitting element and allowing the first and second ends of the light emitting element to be exposed; a first contact electrode electrically connecting the first electrode with the first end of the light emitting element; a second contact electrode electrically connecting the second electrode with the second end of the light emitting element; and a passivation pattern disposed on each of the first and second contact electrodes. The first and second contact electrodes may be disposed on the insulating layer and spaced apart from each other and may be electrically separated from each other. | 2021-09-16 |
20210288218 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device includes a pixel circuit, a first insulation layer covering the pixel circuit, a first electrode disposed on the first insulation layer, a second electrode disposed on the first insulation layer while being spaced apart from the first electrode, a second insulation layer covering the first electrode, the second electrode, and the first insulation layer disposed between the first electrode and the second electrode, and a light emitting element electrically connected to the first electrode and the second electrode on the second insulation layer and disposed between the first electrode and the second electrode. Here, the second insulation layer includes a first area overlapping the first electrode, a second area overlapping the second electrode, and a stopper area disposed between the first electrode and the second electrode, and the stopper area has a thickness different from that of each of the first area and the second area. | 2021-09-16 |
20210288219 | SEMICONDUCTOR DEVICE - An embodiment provides a semiconductor device comprising: a substrate; a bonding layer disposed on the substrate; an electrode layer disposed on the bonding layer; a semiconductor structure disposed on the electrode layer and including a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer disposed between the first conductive semiconductor layer and the second conductive semiconductor layer; a first electrode electrically connected to the first conductive semiconductor layer; and a second electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer includes a through-hole, and the second electrode is disposed in the through-hole so as to be electrically connected to the electrode layer. | 2021-09-16 |
20210288220 | DISPLAY DEVICE - A display device includes a first electrode stem and a second electrode stem extended in a first direction and spaced from each other, a first electrode branch branching off from the first electrode stem and extended in a second direction, a second electrode branch branching off from the second electrode stem and extended in the second direction, a third electrode between the first electrode branch and the second electrode branch and one or more light-emitting elements between the first electrode branch and the third electrode and between the third electrode and the second electrode branch, wherein the third electrode is extended in the second direction, and both ends of the third electrode in the second direction are spaced from the first electrode stem and from the second electrode stem, respectively. | 2021-09-16 |
20210288221 | Optoelectronic Semiconductor Component Having a Semiconductor Contact Layer and Method for Producing the Optoelectronic Semiconductor Component - In an embodiment, an optoelectronic semiconductor component includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, wherein a respective semiconductor material of the first and second semiconductor layers are each a compound semiconductor material including a first, a second and a third composition element, and a second contact region configured to electrically contact the second semiconductor layer, wherein the first semiconductor layer is patterned and arranged over the second semiconductor layer, wherein the second contact region is arranged between patterned regions of the first semiconductor layer, wherein the second contact region comprises a second metallic contact layer and a semiconductor contact layer between the second metallic contact layer and the second semiconductor layer, wherein a semiconductor material of the semiconductor contact layer includes the first, second and third composition elements, and wherein a concentration of the first and second composition elements varies from a position on a side of the second semiconductor layer to a position on a side of the second metallic contact layer. | 2021-09-16 |
20210288222 | Light Emitting Diode Devices With Common Electrode - Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the plurality of mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. The plurality of mesas defines a matrix of pixels, the matrix of pixels is surrounded by a common electrode comprising a plurality of semiconductor stacks surrounded by a conducting metal. Each of the semiconductor stacks is inactive, and in one or more embodiments, comprises at least one layer of GaN. | 2021-09-16 |
20210288223 | Light Emitting Diode Devices with Current Spreading Layer - Described are light emitting diode (LED) devices comprising a plurality of mesas defining pixels, each of the mesas comprising semiconductor layers, an N-contact material in a space between each of the plurality of mesas, a dielectric material which insulates sidewalls of the P-type layer and the active region from the metal. A current spreading layer is on the P-type layer, the current spreading layer having a first portion and a second portion; a hard mask layer above the second portion of the current spreading layer, the hard mask layer comprising sidewalls defining a hard mask opening; a liner layer conformally-deposited in the hard mask opening above the first portion of the current spreading layer and on the sidewalls of the hard mask layer; a P-metal material plug on the liner layer; a passivation layer on the hard mask layer; and an under bump metallization layer on the passivation layer. | 2021-09-16 |
20210288224 | THIN-FILM WHITE LED CHIP - A thin-film white LED chip includes a transparent substrate, a first transparent electrode, an emissive structure, a second transparent electrode, and a first phosphorescent/fluorescent layer respectively arranged in sequence. The emissive structure includes an emissive layer, an electron injection layer and a hole injection layer respectively formed at both sides of the emissive layer, and a total thickness of the electron injection layer and the second transparent electrode (in an inverted structure) or a total thickness of the hole injection layer and the second transparent electrode (in a conventional structure) is smaller than a length of one emission wavelength of the emissive layer. The evanescent wave generated by total internal reflection can penetrate into and be absorbed by the first phosphorescent/fluorescent layer to further emit light, thereby the overall external quantum efficiency of the LED chip is improved. | 2021-09-16 |
20210288225 | SEMICONDUCTOR WAFER, SEMICONDUCTOR DEVICE, AND GAS CONCENTRATION MEASURING DEVICE - Provided are a semiconductor wafer, a semiconductor device, and a gas concentration measuring device having a size reduced by reducing warpage to be even smaller than the sizes that can be achieved by conventional techniques. The semiconductor wafer includes: a wafer substrate, a semiconductor stacked portion formed on a first surface of the wafer substrate, the semiconductor stacked portion being capable of emitting or receiving infrared light of 2 μm to 10 μm; and an optical filter formed on a second surface of the wafer substrate that is opposite to the first surface of the wafer substrate. The thickness T | 2021-09-16 |
20210288226 | REFLECTIVE LAYERS FOR LIGHT-EMITTING DIODES - A light-emitting diode (LED) chip with reflective layers having high reflectivity. The LED chip may include an active LED structure including an active layer between an n-type layer and a p-type layer. A first reflective layer is adjacent the active LED structure and comprises a plurality of dielectric layers with varying optical thicknesses. The plurality of dielectric layers may include a plurality of first dielectric layers and a plurality of second dielectric layers of varying thicknesses and compositions. The LED chip may further include a second reflective layer that includes an electrically conductive path through the first reflective layer. | 2021-09-16 |
20210288227 | WAVELENGTH CONVERSION MATERIAL, METHOD OF MANUFACTURING THEREOF AND LIGHT EMITTING DEVICE - The wavelength conversion material includes a general formula (I) M | 2021-09-16 |
20210288228 | CONVERTER SYSTEM - The present invention relates to a light emitting device comprising a red-emitting Eu | 2021-09-16 |
20210288229 | Quantum Dot Films Utilizing Multi-Phase Resins - Multi-phase polymer films containing quantum dots (QDs) are described herein. The films have domains of primarily hydrophobic polymer and domains of primarily hydrophilic polymer. QDs, being generally more stable within a hydrophobic matrix, are dispersed primarily within the hydrophobic domains of the films. The hydrophilic domains tend to be effective at excluding oxygen. | 2021-09-16 |
20210288230 | LIGHT-EMITTING DEVICE - A light-emitting device is provided. The light-emitting device includes a first electrode; a second electrode; a subminiature light-emitting device disposed between the first electrode and the second electrode; and a planarization layer disposed between the first electrode and the second electrode. The planarization layer is prepared by curing a composition including an oligomeric compound that includes a group represented by Formula A, a group represented by Formula B, a group represented by Formula C, or any combination thereof: | 2021-09-16 |
20210288231 | ARRAY SUBSTRATE, DISPLAY PANEL, AND MANUFACTURING METHOD OF DISPLAY PANEL - The present invention discloses an array substrate, a display panel, and a manufacturing method of the display panel. The display panel includes the array substrate and a light-emitting element. The array substrate includes a substrate layer, a driving circuit layer, and a cover layer stacked in order from bottom to top. The cover layer is a gray light-absorbing material for absorbing ambient light and reflected light of the driving circuit layer. | 2021-09-16 |
20210288232 | LIGHT-EMITTING DEVICE, MANUFACTURING METHOD THEREOF AND DISPLAY MODULE USING THE SAME - A light-emitting device includes a light-emitting element having a first-type semiconductor layer, a second-type semiconductor layer, an active stack between the first-type semiconductor layer and the second-type semiconductor layer, a bottom surface, and a top surface. A first electrode is disposed on the bottom surface and electrically connected to the first-type semiconductor layer. A second electrode is disposed on the bottom surface and electrically connected to the second-type semiconductor layer. A supporting structure is disposed on the top surface. The supporting structure has a thickness and a maximum width. A ratio of the maximum width to the thickness is of 2˜150. | 2021-09-16 |
20210288233 | LED PACKAGE STRUCTURE - A light emitting diode (LED) package structure includes a circuit board, a reflective cup, a LED chip and a lens structure. The reflective cup is mounted on the circuit board, wherein the reflective cup and the circuit board collectively form a concave cup with an opening. The reflective cup has a first metal ring in the concave cup. The LED chip is mounted on the circuit board and within the concave cup. The lens structure has a second metal ring configured to join the first metal ring to cover the opening. | 2021-09-16 |
20210288234 | LIGHT-EMITTING-ELEMENT-EQUIPPED SUBSTRATE AND BACKLIGHT - A light-emitting-element-equipped substrate includes: a circuit substrate including a main surface; a light-emitting element mounted on the main surface and electrically connected to the circuit substrate; a silicone-based white resist layer covering the main surface and including: a first opening surrounding the light-emitting element; and a second opening different from the first opening; and a transparent protective layer covering the light-emitting element, the silicone-based white resist layer, and the second opening. | 2021-09-16 |
20210288235 | SURFACE-MOUNTABLE PIXEL PACKAGES AND PIXEL ENGINES - A method of making a surface-mountable pixel engine package comprises providing an array of spaced-apart conductive pillars and an insulating mold compound laterally disposed between the conductive pillars on a substrate together defining a planarized surface. Pixel engines comprising connection posts are printed to the conductive pillars so that each of the connection posts is in electrical contact with one of the conductive pillars. The pixel engines are tested to determine known-good pixel engines. An optically clear mold compound is provided over the planarized surface and tested pixel engines. Optically clear mold compound is adhered to a tape and the substrate is removed. The optically clear mold compound, the insulating mold compound, the conductive pillars, the optically clear mold compound, and the tested pixel engines are singulated to provide pixel packages that comprise the pixel engines and the known-good pixel engines are transferred to a reel or tray. | 2021-09-16 |
20210288236 | LIGHT IRRADIATION UNIT AND LIGHT IRRADIATION DEVICE - A light irradiation unit includes a substrate having a longitudinal direction, the longitudinal direction being a first axis direction; multiple light sources arranged along the first axis direction on a first surface of the substrate; a heat dissipation member arranged on a second surface of the substrate opposite to the first surface; and a housing having a pair of first side surfaces holding the heat dissipation member therebetween in a second axis direction orthogonal to the first axis direction along the first surface. The substrate has, at an end portion in the first axis direction, an end surface intersecting the first axis direction. The location of the end surface in the first axis direction is near an edge of the first side surface along the first axis direction. The end surface is exposed from the housing or covered by a detachable protection member. | 2021-09-16 |
20210288237 | METHOD AND APPARATUS FOR THERMAL-TO-ELECTRICAL ENERGY CONVERSION - An improved method and apparatus for thermal-to-electric conversion involving relatively hot and cold juxtaposed surfaces separated by a small vacuum gap wherein the cold surface provides an array of single charge carrier converter elements along the surface and the hot surface transfers excitation energy to the opposing cold surface across the gap through Coulomb electrostatic coupling interaction. | 2021-09-16 |
20210288238 | TOPOLOGICAL QUBIT DEVICE - Devices, systems, and/or methods that can facilitate topological quantum computing are provided. According to an embodiment, a device can comprise a circuit layer formed on a wiring layer of the device and that comprises control components. The device can further comprise a topological qubit device formed on the circuit layer and that comprises a nanorod capable of hosting | 2021-09-16 |
20210288239 | PIEZOELECTRIC COMPOSITION AND ELECTRONIC COMPONENT - A piezoelectric composition according to the present invention comprising: a carbon, and a main component composed of an alkali metal niobate based compound. The amount of carbon contained is 350 to 700 ppm by weight. | 2021-09-16 |
20210288240 | MAGNETIC MEMORY DEVICE - A magnetic memory device includes a magnetoresistance effect element including a first, second, and third ferromagnetic layer, a first non-magnetic layer between the first and second ferromagnetic layer, and a second non-magnetic layer between the second and third ferromagnetic layer. The second ferromagnetic layer is between the first and third ferromagnetic layer. The third ferromagnetic layer includes a fourth ferromagnetic layer in contact with the second non-magnetic layer, a third non-magnetic layer, and a fourth non-magnetic layer between the fourth ferromagnetic layer and the third non-magnetic layer. The first non-magnetic layer includes an oxide including magnesium (Mg). A melting point of the fourth non-magnetic layer is higher than the third non-magnetic layer. | 2021-09-16 |
20210288241 | Under-Cut Via Electrode for Sub 60nm Etchless MRAM Devices by Decoupling the Via Etch Process - A method for fabricating a magnetic tunneling junction (MTJ) structure is described. A first dielectric layer is deposited on a bottom electrode and partially etched through to form a first via opening having straight sidewalls, then etched all the way through to the bottom electrode to form a second via opening having tapered sidewalls. A metal layer is deposited in the second via opening and planarized to the level of the first dielectric layer. The remaining first dielectric layer is removed leaving an electrode plug on the bottom electrode. MTJ stacks are deposited on the electrode plug and on the bottom electrode wherein the MTJ stacks are discontinuous. A second dielectric layer is deposited over the MTJ stacks and polished to expose a top surface of the MTJ stack on the electrode plug. A top electrode layer is deposited to complete the MTJ structure. | 2021-09-16 |
20210288242 | MAGNETORESISTIVE RANDOM-ACCESS MEMORY DEVICE INCLUDING MAGNETIC TUNNEL JUNCTIONS - A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first free layer, forming a first tunnel barrier layer on the free layer, forming a reference layer on the first tunnel barrier layer, forming a second tunnel barrier layer on the reference layer, and forming a second free layer on the second tunnel barrier layer. An area of the second free layer is less than an area of the first free layer. Also, the first free layer, the first tunnel barrier layer and the reference layer are a first magnetic tunnel junction, and the reference layer, the second tunnel barrier layer and the second free layer are a second magnetic tunnel junction. | 2021-09-16 |
20210288243 | MAGNETIC MEMORY DEVICE AND MANUFACTURING METHOD OF MAGNETIC MEMORY DEVICE - According to one embodiment, a magnetic memory device includes a first conductor extending along a first direction, a second conductor extending along a second direction and above the first conductor, and a first layer stack provided between the first conductor and the second conductor and including a first magnetoresistance effect element. The first layer stack has a rectangular shape along a stack surface of the first layer stack. The rectangular shape of the first layer stack has a side intersecting with both the first direction and the second direction. | 2021-09-16 |
20210288244 | MAGNETIC STORAGE ELEMENT, MAGNETIC HEAD, MAGNETIC STORAGE DEVICE, ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING MAGNETIC STORAGE ELEMENT - Provided is a magnetic storage element including a stack structure which includes a fixed layer whose magnetization direction is fixed, a storage layer whose magnetization direction is reversible, and a non-magnetic layer sandwiched between the fixed layer and the storage layer. The magnetization direction has a direction along a stack direction of the stack structure, and the fixed layer or the storage layer has a region which contains at least one contained element selected from the element group consisting of B, C, N, Al, Mg, and Si at | 2021-09-16 |
20210288245 | MAGNETORESISTIVE STACK AND METHODS THEREFOR - A magnetoresistive device includes a magnetically fixed region and a magnetically free region positioned on opposite sides of a tunnel barrier region. One or more transition regions, including at least a first transition region and second transition region, is positioned between the magnetically fixed region and the tunnel barrier region. The first transition region includes a non-ferromagnetic transition metal and the second transition region includes an alloy including iron and boron. | 2021-09-16 |
20210288246 | INVERTED WIDE BASE DOUBLE MAGNETIC TUNNEL JUNCTION DEVICE - A method of manufacturing a double magnetic tunnel junction device is provided. The method includes forming a first magnetic tunnel junction stack, forming a spin conducting layer on the first magnetic tunnel junction stack, and forming a second magnetic tunnel junction stack on the spin conducting layer. The second magnetic tunnel junction stack has a width that is greater than a width of the first magnetic tunnel junction stack. | 2021-09-16 |
20210288247 | MAGNETIC TUNNEL JUNCTION HAVING TAPERED ALL-AROUND STRUCTURE - A method of manufacturing a magnetic tunnel junction device is provided. The method includes forming a conical insulator core, forming a conductor layer on the insulator core, forming a magnetic free layer on the conductor layer, forming a barrier layer on the magnetic free layer, and forming a magnetic fixed layer on the barrier layer. | 2021-09-16 |
20210288248 | METHOD FOR FORMING SEMICONDUCTOR STRUCTURE - A method for forming a semiconductor structure includes following operations. A first conductive layer is formed. A first dielectric layer is formed over the first conductive layer, and the first dielectric layer includes at least one trench exposing the first conductive layer. A second conductive layer is formed in the trench. A third conductive layer is formed in the trench, and a resistivity of the third conductive layer is greater than a resistivity of the second conductive layer. A second dielectric layer is formed over the third conductive layer. A phase change material is formed over the first dielectric layer. | 2021-09-16 |
20210288249 | DIFFUSION LAYER FOR MAGNETIC TUNNEL JUNCTIONS - The present disclosure describes an exemplary method that can prevent or reduce out-diffusion of Cu from interconnect layers to magnetic tunnel junction (MTJ) structures. The method includes forming an interconnect layer over a substrate that includes an interlayer dielectric stack with openings therein; disposing a metal in the openings to form corresponding conductive structures; and selectively depositing a diffusion barrier layer on the metal. In the method, selectively depositing the diffusion barrier layer includes pre-treating the surface of the metal; disposing a precursor to selectively form a partially-decomposed precursor layer on the metal; and exposing the partially-decomposed precursor layer to a plasma to form the diffusion barrier layer. The method further includes forming an MTJ structure on the interconnect layer over the diffusion barrier layer, where the bottom electrode of the MTJ structure is aligned to the diffusion barrier layer. | 2021-09-16 |
20210288250 | Phase Change Memory Having Gradual Reset - A phase change memory (PCM) structure configured for performing a gradual reset operation includes first and second electrodes and a phase change material layer disposed between the first and second electrodes. The PCM structure further includes a thermal insulation layer disposed on at least sidewalls of the first and second electrodes and phase change material layer. The thermal insulation layer is configured to provide non-uniform heating of the phase change material layer. Optionally, the thermal insulation layer may be formed as an air gap. The PCM structure may be configured having the first and second electrodes aligned in a vertical or a lateral arrangement. | 2021-09-16 |
20210288251 | SUPPRESSING OXIDATION OF SILICON GERMANIUM SELENIUM ARSENIDE MATERIAL - An ovonic threshold switch comprises a thin film composed essentially of Si, Ge, Se, As, and an amount of a chalcogen that is effective to passivate oxidation of the composition in the presence of water vapor, wherein the chalcogen is selected from the list consisting of: Te and S. In one or more embodiments, the chalcogen is S. In one or more embodiments, the chalcogen is Te. In one or more embodiments, the effective amount of the chalcogen is greater than 1% by atomic percent. In one or more embodiments, the effective amount of the chalcogen is less than 10% by atomic percent. In one or more embodiments, the composition of matter comprises 10% Si, 15% Ge, 40% Se, 30% As, and 5% chalcogen by atomic percent. | 2021-09-16 |
20210288252 | SELECTOR AND NON-VOLATILE STORAGE DEVICE - A selector includes a first electrode, a second electrode, and a selector layer provided between the first electrode and the second electrode and contains Si | 2021-09-16 |
20210288253 | MEMORY DEVICE AND MANUFACTURING METHOD OF MEMORY DEVICE - According to one embodiment, a method of manufacturing a memory device including a silicon oxide and a variable resistance element electrically coupled to the silicon oxide, includes: introducing a dopant into the silicon oxide from a first surface of the silicon oxide by ion implantation; and etching the first surface of the silicon oxide with an ion beam. | 2021-09-16 |
20210288254 | SYSTEMS AND METHODS FOR PHASE CHANGE MATERIAL BASED THERMAL ASSESSMENT - In an embodiment, a method includes: growing a phase change material on a platform configured for a semiconductor workpiece process; setting the phase change material to an amorphous state; performing the semiconductor workpiece process within a semiconductor processing chamber; and measuring resistance across two points along the phase change material. | 2021-09-16 |
20210288255 | Method for Manufacturing Display Substrate, Display Substrate and Display Device - A method for manufacturing a display substrate, a display substrate and a display device are provided. The method includes: forming a pixel defining layer for defining a plurality of pixel regions on a base substrate; forming a photodegradable layer between adjacent pixel regions on a side of the pixel defining layer distal to the base substrate; forming an evaporated layer on the base substrate on which the photodegradable layer is formed; and irradiating the photodegradable layer with a photolysis light to decompose the photodegradable layer so that the evaporated layer is disconnected between adjacent pixel regions. | 2021-09-16 |
20210288256 | OLED DEVICE STRUCTURE, OLED DISPLAY PANEL AND DISPLAY DEVICE - An OLED device structure, an OLED display panel and a display device are provided. The OLED device structure includes: a first electrode; a self-assembled layer, disposed on the first electrode; a first transportation layer, disposed on the self-assembled layer; a light-emitting layer, disposed on the first transportation layer; a second transportation layer, disposed on the light-emitting layer; and a second electrode, disposed on the second transportation layer. The OLED display panel and the display device each include the OLED device structure. By setting a self-oriented self-assembled layer in the OLED device structure and selecting specific materials, advantages can be achieved as follows: an injection efficiency of hole is improved, a driving voltage is reduced, mobilities of electron and hole are increased, a luminous efficiency is increased, an external light coupling efficiency is increased, a light extraction rate is increased, and an external quantum efficiency is improved. | 2021-09-16 |
20210288257 | ORGANIC LIGHT-EMITTING DEVICE - The present invention relates to an organic light-emitting device, comprising: a light-emitting layer, which is a quantum dot composite film, wherein the quantum dot composite film comprises a conductive polymer, a quantum dot, and a coordination group connected to the conductive polymer, and the coordination group is connected to the quantum dot. | 2021-09-16 |
20210288258 | ARYLAMINE-FLUORENE ALTERNATING COPOLYMER, ELECTROLUMINESCENCE DEVICE MATERIAL, AND ELECTROLUMINESCENCE DEVICE USING THE POLYMER - The present disclosure provides a technique capable of improving durability (particularly luminescence life-span) of an electroluminescence. In order to solve the above problems, the present disclosure provides an arylamine-fluorene alternating copolymer having a structural unit (A) represented by Chemical Formula (1). | 2021-09-16 |
20210288259 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including: a first electrode; a second electrode; and an organic layer disposed between the first electrode and the second electrode, wherein the organic layer includes an emission layer, wherein the emission layer includes a polycyclic compound represented by Formula 1 and a host, and wherein an amount of the polycyclic compound is less than an amount of the host in the emission layer, wherein Formula 1 is as provided herein. | 2021-09-16 |
20210288260 | ORGANIC LIGHT EMITTING DIODE - Provided is an organic light emitting device including a first organic material layer that comprises a compound of Formula 1: | 2021-09-16 |
20210288261 | POLYMER PHOTOVOLTAICS EMPLOYING A SQUARAINE DONOR ADDITIVE - Disclosed herein are organic photosensitive optoelectronic devices comprising two electrodes in superposed relation, a photoactive region located between the two electrodes, wherein the photoactive region comprises a donor mixture and an organic acceptor material, the donor mixture comprising at least one organic polymer donor material and at least one squaraine donor. Methods of fabricating the organic photosensitive optoelectronic devices are also disclosed. | 2021-09-16 |
20210288262 | COMPOUND FOR ORGANIC ELECTRIC ELEMENT, ORGANIC ELECTRIC ELEMENT COMPRISING THE SAME AND ELECTRONIC DEVICE THEREOF - Provided is the compound represented by Formula 1, an organic electric element comprising a first electrode, a second electrode, and an organic material layer formed between the first electrode and the second electrode, and electronic device thereof, and by comprising the compound represented by Formula 1 in the organic material layer, the driving voltage of the organic electronic device can be lowered, and the luminous efficiency and life time of the organic electronic device can be improved. | 2021-09-16 |
20210288263 | LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A light-emitting device includes a hole transport region including two layers each including a Compound A group, a Compound B group, or any combination thereof, wherein the Compound A group includes one or two amine groups, and the amine group includes a fluorene moiety, a carbazole moiety, a dibenzofuran moiety, a dibenzothiophene moiety, a dibenzosilole moiety, or any combination thereof, and the Compound B group does not includes an amine group, and includes a fluorene moiety, a carbazole moiety, a dibenzofuran moiety, a dibenzothiophene moiety, a dibenzosilole moiety, or any combination thereof. | 2021-09-16 |
20210288264 | Heterocyclic Compound And Organic Light Emitting Element Comprising Same - The present specification relates to a hetero-cyclic compound and an organic light emitting device comprising the same. | 2021-09-16 |
20210288265 | CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - Provided are a condensed cyclic compound having a novel structure and an organic light-emitting device including the same. The organic light-emitting device includes: a first electrode; a second electrode facing the first electrode; an organic layer located between the first electrode and the second electrode and including an emission layer; and at least one condensed cyclic compound represented by Formula 1. | 2021-09-16 |
20210288266 | ORGANIC LIGHT-EMITTING DIODE HAVING LONG LIFESPAN, LOW VOLTAGE, AND HIGH EFFICIENCY PROPERTY - The present disclosure relates to an organic light-emitting diode and, more particularly, to an organic-light-emitting diode comprising: a first electrode; a second electrode facing the first electrode; and a light-emitting layer intercalated between the first electrode and the second electrode, wherein the light-emitting layer comprises at least one of the amine compounds represented by the following Chemical Formula A and at least one of the anthracene compounds represented by the following Chemical Formula B or C. The structures of Chemical Formulas A to C are the same as in the specification. | 2021-09-16 |
20210288267 | Asymmetric Non-Fullerene Acceptor and Organic Photovoltaic Device Comprising the Same - The present invention relates in part to an asymmetric non-fullerene acceptor compound for use in organic photovoltaic (OPV) devices. The invention also relates in part to an OPV device comprising an asymmetric non-fullerene acceptor compound. | 2021-09-16 |
20210288268 | ORGANOMETALLIC COMPOUND, ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME, AND ELECTRONIC APPARATUS INCLUDING THE ORGANIC LIGHT-EMITTING DEVICE - Provided is an organometallic compound represented by Formula 1, an organic light-emitting device including the same, and an electronic apparatus including the organic light-emitting device. | 2021-09-16 |
20210288269 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - Provided are novel Iridium and Platinum complexes containing heterocyclic benzo-fused ligands. The disclosed compound can include a ligand L | 2021-09-16 |
20210288270 | ORGANIC ELECTROLUMINESCENCE DEVICE AND ORGANOMETALLIC COMPOUND FOR ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device of an embodiment includes a first electrode, a second electrode on the first electrode, and an emission layer between the first electrode and the second electrode, wherein the emission layer includes an organometallic compound represented by Formula 1, and may show high emission efficiency properties. | 2021-09-16 |
20210288271 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - Provided are 2-coordinate metal complexes compounds as sensitizers of fluorophores. Also provided are formulations comprising these 2-coordinate metal complexes compounds. Further provided are OLEDs and related consumer products that utilize these 2-coordinate metal complexes compounds. The OLED includes an emissive region that contains a first compound that is a sensitizer having a structure of Formula I: | 2021-09-16 |
20210288272 | ORGANIC LIGHT EMITTING DISPLAY SCREEN AND MANUFACTURING METHOD THEREFOR - The disclosure provides an organic light-emitting display screen and a manufacturing method thereof. The organic light-emitting display screen includes a filter substrate, and further includes a color filter layer, a cathode layer, an organic light-emitting layer and an anode array sequentially formed on the filter substrate. The anode array includes a number of anode units spaced apart from each other, the color filter layer includes a number of filter units, and each of the anode units corresponds to each of the filter units. | 2021-09-16 |
20210288273 | WEARABLE DEVICE BASED ON FREE SHAPE CUTTING TECHNIQUE AND PREPARATION METHOD THEREOF - A wearable device with a circular dial plate design and a method of preparing the wearable device are provided. A circular contour is achieved by a free shape cutting technique, this design can support a pointer display. A bonding region of an organic light emitting diode (OLED) unit module on which a driver integrated circuit (IC) is bonded can be effectively bent to the back of a display panel, thereby, saving space of an entire display module. In addition, the driver IC of the circular display panel adopts a ring-shaped bonding contacts design to reduce the compensation demand caused by expansion or contraction issues in a preparing process. | 2021-09-16 |
20210288274 | OLED PANEL PRODUCTION METHOD AND OLED PANEL PRODUCTION APPARATUS - Included are the steps of: forming a laminated body ( | 2021-09-16 |
20210288275 | FLEXIBLE SUBSTRATE, MANUFACTURING METHOD THEREOF, AND ORGANIC LIGHT EMITTING DISPLAY PANEL - A flexible substrate, a manufacturing method thereof, and an organic light emitting display panel are provided. The flexible substrate includes at least one barrier layer and a plurality of organic material layers, the organic material layers and the barrier layers are configured to be alternately stacked in sequence, and main material of the barrier layer includes a mixture of amorphous silicon and silicon-based oxynitride Si | 2021-09-16 |
20210288276 | FLEXIBLE DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - The disclosure provides a flexible display panel and a manufacturing method thereof. The flexible display panel includes a display region, a bending region, a flexible substrate, a driver circuit layer, and a luminescent functional layer. The flexible substrate includes a first flexible layer, a first barrier layer, and a second flexible layer. The first barrier layer includes a metal oxide disposed in the display region and a stacked-layer including a metal and the metal oxide disposed in the bending region. The disclosure improves flexibility of flexible substrates. | 2021-09-16 |
20210288277 | FLEXIBLE SOLAR CELL - The present invention aims to provide a flexible solar cell having excellent high-temperature, high-humidity durability and excellent initial performance. The present invention relates to a flexible solar cell including, on a flexible substrate: an electrode; a transparent electrode; and a photoelectric conversion layer disposed between the electrode and the transparent electrode, the photoelectric conversion layer containing an organic-inorganic perovskite compound, the flexible substrate including an aluminum foil and an aluminum oxide film formed on the aluminum foil, the flexible substrate having a ratio of the thickness of the aluminum oxide film to the total thickness of the aluminum foil and the aluminum oxide film of 0.1% or higher and 15% or lower. | 2021-09-16 |
20210288278 | Light-Emitting Element, Light-Emitting Device, Display Device, Electronic Device, and Lighting Device - A light-emitting element which uses a plurality of kinds of light-emitting dopants emitting light in a balanced manner and has high emission efficiency is provided. Further, a light-emitting device, a display device, an electronic device, and a lighting device each having reduced power consumption by using the above light-emitting element are provided. A light-emitting element which includes a plurality of light-emitting layers including different phosphorescent materials is provided. In the light-emitting element, the light-emitting layer which includes a light-emitting material emitting light with a long wavelength includes two kinds of carrier-transport compounds having properties of transporting carriers with different polarities. Further, in the light-emitting element, the triplet excitation energy of a host material included in the light-emitting layer emitting light with a short wavelength is higher than the triplet excitation energy of at least one of the carrier-transport compounds. | 2021-09-16 |
20210288279 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device may include: an anode; a cathode; an organic layer between the anode and the cathode and including an emission layer; and a first exciton quenching layer between the anode and the emission layer and in direct contact with the emission layer. The emission layer may include a host and a dopant, the first exciton quenching layer may include a first quenching material, and the host, the dopant, and the first quenching material may each satisfy Equations 1-1 and 1-2: | 2021-09-16 |
20210288280 | LIGHT-EMITTING ELEMENT, DISPLAY DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - A light-emitting element containing a fluorescent material and having high emission efficiency is provided. The light-emitting element contains the fluorescent material and a host material. The host material contains a first organic compound and a second organic compound. The first organic compound and the second organic compound can form an exciplex. The minimum value of a distance between centroids of the fluorescent material and at least one of the first organic compound and the second organic compound is 0.7 nm or more and 5 nm or less. | 2021-09-16 |
20210288281 | LIGHT-EMITTING STRUCTURE, DISPLAY PANEL AND DISPLAY DEVICE - A light-emitting structure, a display panel and a display device. The light-emitting structure comprises a first light-emitting element. The first light-emitting element comprises a first light-emitting layer, a first electron transport layer and a first cathode. The first cathode is in contact with the first electron transport layer. The energy level of conduction band minimum (CBM) of the first electron transport layer is greater than the Fermi level of the first cathode. A difference between the energy level of CBM of the first electron transport layer and the Fermi level of the first cathode is in a range from 0.3 to 0.6 eV. | 2021-09-16 |
20210288282 | DISPLAY DEVICE - A display device includes a display panel including a front surface at which an image is displayed and a rear surface which is opposite to the front surface; a circuit board connected to the display panel and facing the rear surface of the display panel; and a heat dissipation layer between the rear surface of the display panel and the circuit board. The heat dissipation layer includes a first heat dissipation sheet electrically connected to the circuit board and a second heat dissipation sheet spaced apart from the first heat dissipation sheet in a direction along the display panel. | 2021-09-16 |
20210288283 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY PANEL - A light-emitting device includes: an anode disposed on a base, and a cathode disposed on a side of the anode facing away from the base. The anode includes a light-reflecting sub-electrode and a light-transmitting sub-electrode located on a surface of the light-reflecting sub-electrode facing away from the base, and an orthographic projection of the light-transmitting sub-electrode on the base is located within a range of an orthographic projection of the light-reflecting sub-electrode on the base. The light-reflecting sub-electrode includes a metal pattern and a metal oxide pattern, and the metal oxide pattern is located in at least part of a region around the metal pattern. | 2021-09-16 |
20210288284 | OLED DISPLAY PANEL AND MANUFACTURING METHOD THEREOF - An OLED display panel and a manufacturing method therefor are disclosed. The display panel includes: a substrate, a first electrode, a pixel definition layer, a plurality of openings of the pixel definition layer, fence structures laid in the openings, a light-emitting functional layer and a second electrode. An evaporation process is conducted to form a surface topology that the second electrode thickness on the side wall of the fences and on the bottom of the trenches between the fences are thinner than an nominal thickness of the second electrode on the top of the fences. The present disclosure can effectively increase a light output from the light-emitting functional layer while keep the overall resistance of the second electrode under controlled. | 2021-09-16 |
20210288285 | Flip-chip Light Emitting Diode and Manufacturing Method Thereof - A method of manufacturing a flip-chip light emitting diode includes: providing a transparent substrate and a temporary substrate, and bonding the transparent substrate with the temporary substrate; grinding and thinning the transparent substrate; providing a light-emitting epitaxial laminated layer having a first surface and a second surface opposite to each other, and including a first semiconductor layer, an active layer and a second semiconductor layer; forming a transparent bonding medium layer over the first surface of the light-emitting epitaxial laminated layer, and bonding the transparent bonding medium layer with the transparent substrate; defining a first electrode region and a second electrode region over the second surface of the light-emitting epitaxial laminated layer, and manufacturing a first electrode and a second electrode; and removing the temporary substrate. | 2021-09-16 |
20210288286 | DISPLAY DEVICE AND METHOD OF MANUFACTURING SAME - A display device includes: a sealing film provided so as to cover light-emitting elements at least partially constituting a display area and including a first inorganic film, an organic film, and a second inorganic film stacked in this order; and a first damming wall in a frame area around the display area, the first damming wall surrounding the display area and overlapping a peripheral portion of the organic film, wherein at least one inorganic insulation film in a TFT layer has an upwardly open, first opening at least in a part of an area between the display area and the first damming wall, and the organic film is provided so as to fill in the first opening. | 2021-09-16 |
20210288287 | DISPLAY AND ELECTRONIC APPARATUS - A display includes a display panel, a shock dispersion layer, a strain relaxation layer, and a shock absorption layer. The shock dispersion layer is provided on a light-extraction side of the display panel and has a Young's modulus of 50 GPa or greater. The strain relaxation layer is provided between the shock dispersion layer and the display panel and has a Young's modulus lower than the Young's modulus of the shock dispersion layer. The shock absorption layer is provided between the strain relaxation layer and the display panel and has a storage modulus of 10 kPa or greater and 1 MPa or less at a room temperature. | 2021-09-16 |
20210288288 | DISPLAY PANEL AND DISPLAY DEVICE - The present disclosure provides a display panel and a display device. The display panel includes: a cover plate; a substrate, spaced apart from the cover plate, wherein an edge of the substrate is connected to an edge of the cover plate through an adhesive member, and the substrate comprises a first region enclosed and defined by the adhesive member; and a protective layer, disposed at a side of the substrate away from the cover plate. An impact abruption structure is configured on the protective layer or configured between the protective layer and the adhesive member, and an impact is applied towards the substrate. In this way, a possibility of the adhesive member being damaged while the display panel receiving the impact may be reduced. | 2021-09-16 |
20210288289 | DISPLAY DEVICE - A display device including a display panel having a light emitting area and a non-light emitting area around the light emitting area, a first conductive pattern disposed in the non-light emitting area, a second conductive pattern disposed on the first conductive pattern, and a reflection pattern overlapping the non-light emitting area and disposed between the light emitting area and the second conductive pattern. | 2021-09-16 |
20210288290 | LIGHT EMITTING DEVICE AND DISPLAY APPARATUS INCLUDING THE SAME - A light emitting device includes a first electrode; a white organic light emission structure provided on the first electrode; a second electrode provided on the white organic light emission structure; and a reflective layer provided on an opposite side of the first electrode from the white organic light emission structure and including a first reflective region, a second reflective region, and a third reflective region having different heights from one another and forming different separation distances from the second electrode. A plurality of recesses may be provided in at least one of the first reflective region, the second reflective region, and the third reflective region on a surface of the reflective layer, and thus the color purity of the light emitting device may be improved. | 2021-09-16 |
20210288291 | ORGANIC LIGHT-EMITTING DIODE DISPLAY - An organic light-emitting diode (OLED) display is disclosed. In one aspect, the OLED display includes a first substrate, an insulating layer disposed over the first substrate and including a first inclined portion and a first electrode disposed over the insulating layer. The OLED display also includes a light-emitting element layer disposed over the first electrode, a second electrode disposed over the light-emitting element layer and a color conversion layer and a transmissive layer disposed over the second electrode. The first electrode includes a second inclined portion disposed over and inclined along the first inclined portion of the insulating layer. | 2021-09-16 |
20210288292 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel includes at least one light transmitting layer, which includes at least one first sub-region and at least one second sub-region. A thickness of the first sub-region is different from a thickness of the second sub-region; the first sub-region includes a first surface proximate to a display surface of the display panel and a second surface facing away from the display surface of the display panel, and the second sub-region includes a third surface proximate to the display surface of the display panel and a fourth surface facing away from the display surface of the display panel; and for visible light, a phase difference between light reflected by the first surface and light reflected by the second surface is Δ1, and a phase difference between light reflected by the third surface and light reflected by the fourth surface is Δ2, where 0.5π≤|Δ1−Δ2|≤1.5π. | 2021-09-16 |
20210288293 | DISPLAY DEVICE - A display device includes a first substrate, a second substrate that faces the first substrate, an active element layer disposed on a first surface of the first substrate that faces the second substrate and includes a first through-hole that penetrates therethrough in a thickness direction, and an anti-reflection member disposed on a second surface of the second substrate that faces the first substrate, overlaps the first through-hole, and is spaced apart from the first through-hole. The anti-reflection member includes a first refractive layer disposed on a second surface of the second substrate and that has a refractive index greater than a refractive index of the second substrate, and a second refractive layer disposed on the first refractive layer and that has a refractive index less than the refractive index of the first refractive layer. | 2021-09-16 |
20210288294 | DISPLAY PANEL AND DISPLAY DEVICE - A display panel and a display device are provided. In an embodiment, the display panel includes: a substrate; a plurality of metal parts disposed above the substrate; and a plurality of light-emitting elements disposed at a side of the plurality of metal parts facing away from the substrate, each of the plurality of light-emitting elements including a first electrode, a light-emitting portion, and a second electrode stacked in sequence in a light-exiting direction of the display panel. In an embodiment, an orthographic projection of each of the plurality of metal parts on the substrate covers an orthographic projection of a respective one first electrode on the substrate. In an embodiment, the first electrode has a relatively flat surface, so the probability of mutual interference between the ambient light reflected by the first electrode is reduced, which can alleviate color dispersion of the display panel in a dark state. | 2021-09-16 |
20210288295 | PIXEL DEFINING LAYER, MANUFACTURING METHOD THEREFOR, DISPLAY SUBSTRATE, AND DISPLAY DEVICE - Provided are a pixel defining layer, a manufacturing method therefor, a display substrate, and a display device. The method includes: providing a base substrate; forming a lyophilic layer on the base substrate, the lyophilic layer including a top surface and a lateral surface; forming a lyophobic layer covering at least the top surface of the lyophilic layer and a surface covering layer covering at least a part of the lateral surface of the lyophilic layer, the part of the lateral surface being the part of the lateral surface in proximity to the base substrate; and removing the surface covering layer, thus exposing at least the part of the lateral surface in proximity to the base substrate and forming a pixel defining layer. The manufacturing method reduces the extent to which a solution climbs on the lateral surface, thus reducing the impact on film uniformity in a pixel region. | 2021-09-16 |
20210288296 | MANUFACTURING METHOD OF DISPLAY APPARATUS - A manufacturing method of a display apparatus includes forming a display layer on a substrate; forming an opening by irradiating laser onto the display layer; and sealing the display layer formed on the substrate. The laser is irradiated according to a spiral movement path, and the opening is formed by irradiating the laser at least twice at the same location. | 2021-09-16 |
20210288297 | DISPLAY SUBSTRATE, METHOD AND DEVICE FOR MANUFACTURING DISPLAY SUBSTRATE, AND DISPLAY DEVICE - A display substrate, a method and a device for manufacturing the display substrate, and a display device are provided. The method includes shielding a to-be-cut region of a to-be-evaporated substrate with a shielding member and evaporating a common layer material onto the to-be-evaporated substrate to form a common layer of the display substrate. The display substrate includes the to-be-cut region and a display region surrounding the to-be-cut region, and the common layer material is deposited onto the display region rather than the to-be-cut region. | 2021-09-16 |
20210288298 | VEHICLE BATTERY SYSTEM - A vehicle battery assembly having a battery stack that includes a plurality of modules. The plurality of modules fastened by vertical and horizontal bolts. The battery stack includes cooling plates that is configured to be flexible and non-rigid placed between the modules. The cooling plates have improved isolation of structural stresses from the battery assembly. | 2021-09-16 |
20210288299 | VEHICLE BATTERY ASSEMBLY - A vehicle battery assembly having specialized fasteners that includes an integrated compression limiter. The compression limiter provides protection for the fastening joint of a cover and a tray of a housing for the battery assembly. The battery assembly may also include nut and bolt assembly which may be installed by a nut insertion tool. The nut insertion tool allows the nut and bolt assembly to be installed without damaging the tray or the cover. | 2021-09-16 |
20210288300 | METHOD OF MAKING PARTICLES CONTAINING METAL AND ACTIVE BATTERY MATERIAL FOR ELECTRODE FABRICATION - A method of making an electrode material for a lithium-ion electrochemical cell includes sputtering a wire of metal or metal alloy in an atmospheric plasma to produce activated particles of metal or metal alloy and contacting the activated particles of the metal or metal alloy with particles of a lithium-ion cell active electrode material to produce composite particles in which particles of the first lithium-ion cell active electrode material are adhered to particles of the metal or metal alloy. | 2021-09-16 |
20210288301 | CARBON ADDITIVES FOR DIRECT COATING OF SILICON-DOMINANT ANODES - Systems and methods are provided for carbon additives for direct coating of silicon-dominant anodes. An example composition for use in directly coated anodes may include a silicon-dominated anode active material, a carbon-based binder, and a carbon-based additive, with the composition being configured for low-temperature pyrolysis. The low-temperature pyrolysis may be conducted at <850° C. An anode may be formed using a direct coating process of the composition on a current collector. The anode active material may yield silicon constituting between 85% and 95% of weight of the formed anode after pyrolysis. The carbon-based additive may yield carbon constituting between 2% and 6% of weight of the formed anode after pyrolysis. | 2021-09-16 |
20210288302 | METHOD FOR PROCESSING AN ELECTRODE SHEET AND PROCESSING DEVICE FOR THIS PURPOSE - A method for processing an electrode sheet, wherein the electrode sheet has a carrier layer and an electrode material that is applied to the carrier layer only in a material region of the electrode sheet, so that a free region, which is free of electrode material, remains for the formation of diverters, wherein the electrode sheet is guided in a conveying direction by a processing device, so that the material region and the free region (run side by side, wherein the processing device has a calender through which the electrode sheet is guided and with which the material region is calendered, wherein the processing device additionally has at least one roller that is designed in such a way that it exerts a transverse tensile stress on the electrode sheet. A corresponding processing device is also specified. | 2021-09-16 |
20210288303 | ELECTRODE FOR SECONDARY BATTERIES CONTAINING HIGH-DENSITY CARBON DEFECT STRUCTURE AND METHOD OF PRODUCING THE SAME - Disclosed are an electrode for secondary batteries containing a high-density carbon defect structure and a method of producing the same. The electrode can prevent deterioration of battery performance due to dendrite formation by inhibiting self-diffusion and aggregation of metal nuclei, and can exhibit an unprecedentedly high number of charge/discharge cycles and excellent energy efficiency by uniformly electrodepositing metal ions on the surface of the electrode. When the method of producing a carbon electrode for a secondary battery is used, an electrode containing a high-density carbon defect structure can be produced, and thus a battery with higher efficiency and a longer lifespan can be produced. The secondary battery comprising the electrode is useful for fields related to medium/large-scale energy storage technology, in particular, for mobile devices, automobile batteries, and renewable-energy power generation systems. | 2021-09-16 |
20210288304 | ANISOTROPIC EXPANSION OF SILICON-DOMINANT ANODES - Systems and methods for anisotropic expansion of silicon-dominant anodes may include forming an anode by pyrolyzing an active material layer comprising a binder and silicon particles in a temperature range of 600 to 800° C.; and forming a battery cell comprising a cathode, an electrolyte, and the anode, where the anode comprises the pyrolyzed active material layer on a current collector. A lateral expansion of the anode during operation may be less than 2%, less than 1%, or less than 0.6%. The active material layer may be pyrolyzed on the current collector or may be pyrolyzed on a substrate before laminating on the current collector. The anode active material layer may be pyrolyzed using a 1 hour dwell time or less or using a 2 hour dwell time or less. The active material layer may be pyrolyzed in a temperature range of 650 to 800° C. | 2021-09-16 |
20210288305 | POSITIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERIES, POSITIVE ELECTRODE FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERIES, NONAQUEOUS ELECTROLYTE SECONDARY BATTERY, AND METHOD FOR PRODUCING POSITIVE ELECTRODE ACTIVE MATERIAL FOR NONAQUEOUS ELECTROLYTE SECONDARY BATTERIES - An object of the invention is to provide a positive electrode active material for nonaqueous electrolyte secondary batteries that prevents low capacity recovery after high-temperature storage. A nonaqueous electrolyte secondary battery according to the present invention includes secondary particles of a lithium transition metal oxide resulting from the aggregation of primary particles of the oxide, secondary particles of a rare earth compound resulting from the aggregation of primary particles of the compound, and a magnesium compound. The secondary particles of the rare earth compound are adhering to depressions formed between adjacent primary particles of the lithium transition metal oxide on the surface of the secondary particles of the lithium transition metal oxide and also to each of the primary particles forming the depressions. The magnesium compound is adhering to the surface of the secondary particles of the lithium transition metal oxide. | 2021-09-16 |
20210288306 | NEGATIVE ELECTRODE, SECONDARY BATTERY, BATTERY PACK, AND VEHICLE - According to one embodiment, a negative electrode is provided. The negative electrode includes a negative electrode active material-containing layer including a niobium titanium composite oxide and a sulfur-containing coating. Spectral data obtained by X-ray photoelectron spectroscopy on the surface of the negative electrode active material-containing layer includes a first peak with a peak top existing in the range of 208 eV to 210 eV and a second peak with a peak top existing in the range of 160 eV to 165 eV. The ratio (P | 2021-09-16 |
20210288307 | POSITIVE ELECTRODE ACTIVE MATERIAL - The present invention provides a positive electrode active material with which an increase in the interface resistance between the positive electrode active material and a sulfide solid electrolyte over time can be suppressed and also the interface resistance is low. The positive electrode active material of the present invention includes particles that have core particles containing a complex oxide of lithium and a metal element and a coating layer arranged on the surface of the core particles, and is used in a solid-state battery containing a sulfide solid electrolyte. The coating layer is composed of an oxide containing Li and M, where M represents one or two or more elements selected from the group consisting of B, Nb, Ti, Zr, Ta, Zn, W, and Al, or M is B when M represents one element. The molar ratio of Li/M on the surface of the coating layer, as obtained by X-ray photoelectron spectroscopy, is from 0.85 to 3.95. | 2021-09-16 |
20210288308 | SECONDARY BATTERY - A secondary battery includes a positive electrode, a negative electrode, and an electrolytic solution. The positive electrode includes a positive electrode active material layer including a lithium-cobalt composite oxide. The lithium-cobalt composite oxide has a layered rock-salt crystal structure. The negative electrode includes a negative electrode active material layer including graphite. When the secondary battery is charged and discharged with an upper limit of a closed circuit voltage being set to 4.42 V or higher, a unit capacity (mAh/g) satisfies a condition represented by 168 mAh/g≤unit capacity (mAh/g)≤(−0.28×area rate (%)+178) mAh/g. | 2021-09-16 |
20210288309 | POSITIVE ELECTRODE ACTIVE MATERIAL AND LITHIUM SECONDARY BATTERY COMPRISING THE SAME - The present invention relates to a positive electrode active material and a lithium secondary battery comprising the same. | 2021-09-16 |
20210288310 | PROTECTIVE LAYER FOR PROTECTING LITHIUM METAL NEGATIVE ELECTRODE FOR LITHIUM SECONDARY BATTERY, PRODUCTION METHOD THEREOF, AND LITHIUM SECONDARY BATTERY INCLUDING THE SAME - Disclosed is a protective layer to protect a lithium metal negative electrode for a lithium secondary battery, in which the protective layer may inhibit formation of lithium dendrite and improve thermal/chemical stability, and conductivity of lithium ions. Further, disclosed are a production method of the protective layer, and a lithium secondary battery including the protectively layer. The protective layer contains a poly(arylene ether sulfone)-poly(ethylene glycol) graft copolymer represented by a following Chemical Formula 1: | 2021-09-16 |
20210288311 | POSITIVE ELECTRODE FOR NON-AQUEOUS ELECTROLYTE SECONDARY BATTERIES - A positive electrode for nonaqueous electrolyte secondary batteries which contains a first positive electrode active material, a second positive electrode active material and a phosphoric acid compound. With respect to the first positive electrode active material, the volume per mass of pores having a pore diameter of 100 nm or less is 8 mm | 2021-09-16 |
20210288312 | ANODE ACTIVE MATERIAL FOR LITHIUM SECONDARY BATTERY AND SECONDARY BATTERY COMPRISING SAME - The present invention relates to an anode active material for a lithium secondary battery, a secondary battery comprising same, an anode active material comprising low-expansion artificial graphite showing low expansion characteristics upon charge or discharge and a lithium secondary battery comprising same. According to the present invention, an anode active material containing a carbon-based material and a silicon-based material comprises at least a predetermined content of low-expansion artificial graphite, thereby remedying shortcomings of deterioration in energy density and cycle characteristics due to volume expansion, which may occur in an anode active material containing a silicon-based material. Particularly, the present invention achieves a simple manufacturing process and excellent economic feasibility since there is no need to reduce the volume expansion rate of the silicon-based material itself, or to change or process the shape, particle diameter, structure, or the like of the carbon-based material, as in the conventional art. | 2021-09-16 |
20210288313 | HIGH CAPACITY POLYMER CATHODE AND HIGH ENERGY DENSITY RECHARGEABLE CELL COMPRISING THE CATHODE - The invention features a rechargeable cathode and a battery comprising the cathode. The cathode includes a solid, ionically conducting polymer material and electroactive sulfur. The battery contains a lithium anode; the cathode; and an electrolyte; wherein at least one of anode, the cathode and the electrolyte, include the solid, ionically conducting polymer material. | 2021-09-16 |
20210288314 | CARBON- AND GRAPHENE-PROTECTED CATHODE ACTIVE MATERIALS FOR LITHIUM-ION CELLS - Provided is a graphene-embraced particulate (a secondary particle) for use as a lithium-ion battery cathode active material. The particulate comprises a core of one or a plurality of particles of a cathode active material embraced or encapsulated by a shell comprising multiple graphene sheets, wherein the cathode active material is selected from the group of lithium cobalt metal oxides having a general formula of Li | 2021-09-16 |