37th week of 2012 patent applcation highlights part 15 |
Patent application number | Title | Published |
20120228551 | BETA-SIALON, METHOD FOR PRODUCING SAME AND LIGHT-EMITTING DEVICE USING SAME - β-Sialon comprising Eu | 2012-09-13 |
20120228552 | MATERIALS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to organic electroluminescent devices which comprise fluorene derivatives and spiro | 2012-09-13 |
20120228553 | PROCESS AND APPARATUS FOR CARBON DIOXIDE CAPTURE VIA ION EXCHANGE RESINS - A process for the reduction of carbon dioxide (or CO | 2012-09-13 |
20120228554 | MATERIALS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to fluorene derivatives and to electronic devices in which these compounds are used as matrix material in the emitting layer and/or as hole-transport material and/or as electron-blocking or exciton-blocking material and/or as electron-transport material. | 2012-09-13 |
20120228555 | METHOD FOR MAKING GRAPHENE - Particular embodiments of the current method disclose a method for making graphene, comprising providing a starting material and heating the starting material for a time and to a temperature effective to produce graphene. Certain embodiments utilize starting materials comprising carbonaceous materials used in conjunction with, or comprising, sulfur, and essentially free of a transition metal. The graphene produced by the current method can be used to coat graphene-coatable materials. | 2012-09-13 |
20120228556 | GRAPHENE FORMATION - Technologies are generally described for forming graphene and structures including graphene. In an example, a system effective to form graphene may include a source of carbon atoms and a reaction chamber configured in communication with the source of carbon atoms. The reaction chamber may include a first and second layer of a host material. The host material may include a crystalline compound with a layer structure with a layer spacing in a range from about 1.5 Å to about 33 Å. The reaction chamber may be adapted effective to move at least six carbon atoms from the source into the reaction chamber. The reaction chamber may be configured effective to move the at least six carbon atoms in between the first and the second layer. The reaction chamber may be adapted effective to react the carbon atoms under reaction conditions sufficient to form the graphene. | 2012-09-13 |
20120228557 | CARBON-NANOTUBE N-DOPING MATERIAL AND METHODS OF MANUFACTURE THEREOF - A compound containing at least two pyridinium derivatives in its molecular structure and being in a reduced form thereof may be used as a CNT n-doping material. The compound may donate electrons spontaneously to CNTs to n-dope the CNTs, while being oxidized into its stable state. An n-doped CNT that is doped with the CNT n-doping material may maintain a stable n-doped state for a long time without being dedoped even in the air and/or water. Further, the n-doped state may be easily controlled when using the CNT n-doping material. | 2012-09-13 |
20120228558 | METHOD FOR PRODUCING GEL CONTAINING NANO-CARBON MATERIAL - An object of the present invention is to provide a method for producing a gel containing a nano-carbon material, which allows the gelling medium used to be selected from a wide range of substances, is applicable to other nano-carbon materials in addition to carbon nanotubes, and can be implemented in an extremely simple manner. A method for producing a gel containing a nano-carbon material of the present invention as a means for achieving the object is characterized in that a nano-carbon material is stir-mixed with a gelling medium that satisfies the following conditions (but is not an ionic liquid), the gelling medium being in a liquid or molten state:
| 2012-09-13 |
20120228559 | CONDUCTIVE FINE PARTICLES AND ANISOTROPIC CONDUCTIVE MATERIAL - Conductive fine particles have core particle surfaces coated with a metal-plated coating film layer containing nickel and phosphorus and a multilayer conductive layer comprising a palladium layer as the outer surface. The phosphorus content in region A of the metal-plated coating film layer, at a distance of no greater than 20% of the thickness of the entire metal-plated coating film layer from the surface of the core particle, is 7-15 wt % of the entire region A. The phosphorus content in region B of the metal-plated coating film layer, at a distance of no greater than 10% of the thickness of the entire metal-plated coating film layer from the surface of the metal-plated coating film layer on the palladium layer side, is 0.1-3 wt % of the entire region B, and the phosphorus content of the entire metal-plated coating film layer is 7 wt % or greater. | 2012-09-13 |
20120228560 | CONDUCTIVE ADHESIVE, METHOD FOR MANUFACTURING THE SAME, AND ELECTRONIC DEVICE INCLUDING THE SAME - The present invention relates to a conductive adhesive, a method for manufacturing the same, and an electronic device including the same. The conductive adhesive includes: a conductive particle; a low-melting alloy powder including an alloy including Sn and at least one material selected from the group consisting of Ag, Cu, Bi, Zn, In, and Pb; a nano powder; a first binder including a thermosetting resin; and a second binder including a rosin compound. | 2012-09-13 |
20120228561 | PRODUCTION METHOD FOR LITHIUM ION SECONDARY BATTERY POSITIVE ELECTRODE MATERIAL - Provided is the method for producing, by heat treating raw material powder, a lithium ion secondary battery positive electrode material which contains an olivine-structure crystal represented by general formula LiM | 2012-09-13 |
20120228562 | ANODE ACTIVE MATERIAL FOR A RECHARGEABLE LITHIUM BATTERY - An anode active-material for rechargeable lithium batteries and methods of manufacturing the same. This includes preparing an anode active-material for rechargeable lithium batteries, including heat-treating a mixture of Li | 2012-09-13 |
20120228563 | COMPOSITES FOR ANTENNAS AND OTHER APPLICATIONS - Composite material, devices incorporating the composite material and methods of forming the composite material are provided. The composite material includes interstitial material that has at least one of a select relative permittivity property value and a select relative permeability property value. The composite material further includes inclusion material within the interstitial material. The inclusion material has at least one of a select relative permeability property value and a select relative permittivity property value. The select relative permeability and permittivity property values of the interstitial and the inclusion materials are selected so that the effective intrinsic impedance of the interstitial and the inclusion material match the intrinsic impedance of air. Devices made from the composite include metamaterial and/or metamaterial-inspired (e.g. near-field LC-type parasitic) substrates and/or lenses, front-end protection, stealth absorbers, filters and mixers. Beyond the intrinsic, applications include miniature antenna and antenna arrays, directed energy weapons, EMI filters, RF and optical circuit components, among others. | 2012-09-13 |
20120228564 | REFLECTOR FOR LIGHT-EMITTING DEVICE, AND LIGHT-EMITTING DEVICE - The present invention relates to a reflector for a light-emitting device consisting of (A) an polyamide composition comprising a polyamide polymerized from (a) a dicarboxylic acid comprising at least 50 mol % of an alicyclic dicarboxylic acid and (b) a diamine comprising at least 50 mol % of a diamine with a branched main chain. | 2012-09-13 |
20120228565 | METHOD FOR PREPARING SURFACE-MODIFIED SEMICONDUCTIVE AND METALLIC NANOPARTICLES HAVING ENHANCED DISPERSIBILITY IN AQUEOUS MEDIA - Water-dispersible nanoparticles are prepared by applying a coating of a multiply amphipathic dispersant to the surface of a hydrophobic nanoparticle comprised of a semiconductive or metallic material. The multiply amphipathic dispersant has two or more hydrophobic regions and two or more hydrophilic regions, and is typically polymeric. Preferred polymeric dispersants are comprised of (1) a hydrophobic backbone with hydrophilic branches, (2) a hydrophilic backbone with hydrophobic branches, or (3) a backbone that may be either hydrophobic or hydrophilic, and substituted with both hydrophilic and hydrophobic branches. Monodisperse populations of water-dispersible nanoparticles are also provided, as are conjugates of the water-dispersible nanoparticles with affinity molecules such as peptides, oligonucleotides, and the like. | 2012-09-13 |
20120228566 | MATERIAL - The present invention concerns a solid transparent OPL-material, (OPL; Optical Power Limiting). It comprises a solid polymer material that constitutes a matrix with therein dispersed particles. The particles are either nickel-ferrite(NiFe | 2012-09-13 |
20120228567 | URETHANE (METH) ACRYLATE MONOMER AND PRODUCTION PROCESS THEREOF - A process of producing a urethane (meth)acrylate monomer having a low acid value and a low content of a hardly soluble high-molecular weight impurity which is crosslinked high-dimensionally, comprising the steps of:
| 2012-09-13 |
20120228568 | Nail/Bolt Slide Hammer Extractor - Disclosed and described herein is a hand held nail and bolt extractor, to pry up unexposed headed-nails or bolts from substrates and extract exposed headed-nails or bolts from substrates. The tool has a cleft claw at the bottom end, a hand gripped weighted slide hammer, a shaft with stop points at top and bottom of the shaft, an outward tapper at the bottom stop of the shaft, or a magnetic washer at the bottom stop of the shaft, or a soft lock bearing in the slide hammer that will pop into a grove at the bottom stop of the shaft, to maintain a temporary stay position on said hand gripped weighed slide hammer. At the top end is a tapered flat end pry with a center cleft. Made of metal and partially coated with rubber or plastic on the hand gripped weighted slide hammer. The slide hammer when used properly will cause an impact at the top stop of the shaft, which will then transfer compounded exertion force to either pull or pry the object that is to be removed. | 2012-09-13 |
20120228569 | METHODS AND APPARATUSES FOR A SMALL VEHICLE JACK APPARATUS - An apparatus with a wheel engagement mechanism for operation with a jack assembly for engaging and elevating two wheels of a multi-wheeled vehicle relative to the ground is provided. The apparatus includes a base, a support member connected to the base, and a wheel support assembly. The wheel support assembly includes wheel supports connected at the ends of the wheel support that extend outward from the wheel support assembly for supporting two wheels of the vehicle. The apparatus also includes an actuation mechanism for selectively raising and selectively lowering the wheel support assembly to raise and lower the vehicle. A method of assembling the apparatus is also provided. | 2012-09-13 |
20120228570 | Battery Lift Jack - A battery lift jack assembly for lifting batteries comprising: a platform for placement of a battery, where the platform is suspended on a platform pedestal, where the pedestal moves vertically to raise the platform to a desired height; a base that is provided on wheels, where the platform pedestal is secured on the base; a jack assembly for moving the platform pedestal vertically; and a connector, where the connector joins the platform pedestal to the jack assembly and moves vertically along the jack column. The jack assembly includes a jack handle and jack column. The platform may further include lips, which help to secure the battery in a stationary position while the platform, is moved vertically. | 2012-09-13 |
20120228571 | ADVANCED ROLLING ELEMENT BLOCK - A block has a sheave ( | 2012-09-13 |
20120228572 | FENCEPOST COVER - The invention pertains to a fencepost cover. Particularly, the invention pertains to a one piece fencepost cover which includes a mechanism to prevent the upward movement of the fencepost cover relative to a fence post. The one-piece fence post cover is generally dome shaped and includes an aperture for receiving a fence post at the center of the dome. It further includes a locking region to prevent the upward movement of the fencepost cover relative to the fencepost. In one embodiment the locking region is a thinned zone around the perimeter of aperture with is deformed upwardly as the fencepost is pushed through the aperture. In a second embodiment, the perimeter of the aperture includes scallops which engage with the fencepost. | 2012-09-13 |
20120228573 | Memory Cell Constructions, and Methods for Fabricating Memory Cell Constructions - Some embodiments include methods for fabricating memory cell constructions. A memory cell may be formed to have a programmable material directly against a material having a different coefficient of expansion than the programmable material. A retaining shell may be formed adjacent the programmable material. The memory cell may be thermally processed to increase a temperature of the memory cell to at least about 300° C., causing thermally-induced stress within the memory cell. The retaining shell may provide a stress which substantially balances the thermally-induced stress. Some embodiments include memory cell constructions. The constructions may include programmable material directly against silicon nitride that has an internal stress of less than or equal to about 200 megapascals. The constructions may also include a retaining shell silicon nitride that has an internal stress of at least about 500 megapascals. | 2012-09-13 |
20120228574 | VARIABLE RESISTIVE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A variable resistive memory device includes a substrate comprising a cell region and a peripheral region, a word line extending in a first direction formed on the substrate of the cell region, a switching element formed on the word line, a variable resistance layer formed on the word line, and at least one transistor comprising a gate stack, the gate stack formed on the substrate of the peripheral region, wherein the word line comprises a metal layer formed at a same level as the gate stack. | 2012-09-13 |
20120228575 | NANOSCALE ELECTRONIC DEVICE WITH BARRIER LAYERS - On example of the present invention is a nanoscale electronic device comprising a first conductive electrode, a second conductive electrode, and a device layer. The device layer comprises a first dielectric material, between the first and second conductive electrodes, that includes an effective device layer, a first barrier layer near a first interface between the first conductive electrode and the device layer, and a second barrier layer near a second interface between the second conductive electrode and the device layer. A second example of the present invention is an integrated circuit that incorporates nanoscale electronic devices of the first example. | 2012-09-13 |
20120228576 | STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - A storage device includes: a plurality of first electrode wirings; a plurality of second electrode wirings which cross the first electrode wirings; a via plug which is formed between the second electrode wiring and the two adjacent first electrode wirings, and in which a maximum diameter of a bottom surface opposing the first electrode wirings in a direction vertical to a direction in which the first electrode wirings stretch is smaller than a length corresponding to a pitch of the first electrode wiring plus a width of the first electrode wirings; a first storage element which is formed between the via plug and one of the two first electrode wirings; and a second storage element which is formed between the via plug and the other one of the two first electrode wirings. | 2012-09-13 |
20120228577 | PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A phase change memory device includes a mold oxide layer on a substrate, a lower electrode on the mold oxide layer and connected to the substrate, a blocking structure covering a part of the lower electrode and including an etch-stop layer and a blocking structure insulating layer, and a phase change layer covering a remaining part of the lower electrode not covered by the blocking structure, The etch-stop layer includes a material having a higher etching selectivity than that of the lower electrode. | 2012-09-13 |
20120228578 | Resistive Memory Element and Related Control Method - Resistive memory elements and arrays of resistive memory elements are disclosed. In one embodiment, a resistive memory element includes a top electrode element lying in a plane parallel to a reference plane, and having, in perpendicular projection on the reference plane, a top electrode projection; a bottom electrode element lying in a plane parallel to the reference plane, and having, in perpendicular projection on the reference plane, a bottom electrode projection; and an active layer with changeable resistivity interposed between the top electrode element and the bottom electrode element. The top electrode projection and the bottom electrode projection overlap in an overlapping region that comprises a corner of the top electrode projection and/or a corner of the bottom electrode projection, and an area of the overlapping region constitutes less than 10% of a total projected area of the top electrode element and the bottom electrode element on the reference plane. | 2012-09-13 |
20120228579 | 3D POLYSILICON DIODE WITH LOW CONTACT RESISTANCE AND METHOD FOR FORMING SAME - A semiconductor p-i-n diode and method for forming the same are described herein. In one aspect, a SiGe region is formed between a region doped to have one conductivity (either p+ or n+) and an electrical contact to the p-i-n diode. The SiGe region may serve to lower the contact resistance, which may increase the forward bias current. The doped region extends below the SiGe region such that it is between the SiGe region and an intrinsic region of the diode. The p-i-n diode may be formed from silicon. The doped region below the SiGe region may serve to keep the reverse bias current from increasing as result of the added SiGe region. In one embodiment, the SiGe is formed such that the forward bias current of an up-pointing p-i-n diode in a memory array substantially matches the forward bias current of a down-pointing p-i-n diode which may achieve better switching results when these diodes are used with the R/W material in a 3D memory array. | 2012-09-13 |
20120228580 | LIGHT-EMITTING DIODE DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light-emitting diode device and a method for manufacturing the same. In one embodiment, the light-emitting diode device comprises a substrate, an undoped semiconductor layer and a current blocking structure disposed on the substrate in sequence, a plurality of light-emitting structures, separately disposed on the current blocking structure, a plurality of insulating spacers, respectively located between the adjacent light-emitting structures, and a plurality of conductive wires. Each of the light-emitting structures has a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, and a first electrode and a second electrode. The first conductivity type semiconductor layer and the second conductivity type semiconductor layer have different conductivity types. The plurality of conductive wires respectively connecting the first electrode of one of the adjacent light-emitting structures and the second electrode of the other light-emitting structure in sequence. | 2012-09-13 |
20120228581 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND MANUFACTURING METHOD OF THE SAME - The semiconductor light emitting device according to an embodiment includes an N-type nitride semiconductor layer, a nitride semiconductor active layer disposed on the N-type nitride semiconductor layer, and a P-type nitride semiconductor layer disposed on the active layer. The P-type nitride semiconductor layer includes an aluminum gallium nitride layer. The indium concentration in the aluminum gallium nitride layer is between 1E18 atoms/cm | 2012-09-13 |
20120228582 | HYBRID VERTICAL CAVITY LIGHT EMITTING SOURCES - Vertical cavity light emitting sources that utilize patterned membranes as reflectors are provided. The vertical cavity light emitting sources have a stacked structure that includes an active region disposed between an upper reflector and a lower reflector. The active region, upper reflector and lower reflector can be fabricated from single or multi-layered thin films of solid states materials (“membranes”) that can be separately processed and then stacked to form a vertical cavity light emitting source. | 2012-09-13 |
20120228583 | PYRIDYL CARBENE PHOSPHORESCENT EMITTERS - Organometallic compounds comprising an imidazole carbene ligand having a N-containing ring fused to the imidazole ring are provided. In particular, the N-containing ring fused to the imidazole ring may contain one nitrogen atom or more than one nitrogen atom. These compounds may demonstrate high photoluminescent (PL) efficiency, Gaussian emission spectra, and/or short excited state lifetimes. These materials may be especially useful as blue phosphorescent emitters. | 2012-09-13 |
20120228584 | XANTHENE BASED SEMICONDUCTOR COMPOSITIONS - A small molecule semiconductor of Formula (I): | 2012-09-13 |
20120228585 | ORGANIC LIGHT-EMITTING DIODE, DISPLAY AND ILLUMINATING DEVICE - According to one embodiment, there is provided an organic light-emitting diode including an anode and a cathode which are arranged apart from each other, and an emissive layer interposed between the anode and the cathode and including a host material and an emitting dopant. The host material includes a polymer containing dibenzothiophene backbones represented by the following formula (1) as repeating units: | 2012-09-13 |
20120228586 | ORGANIC PHOTOSENSITIVE OPTOELECTRONIC DEVICES WITH TRIPLET HARVESTING - There is disclosed an organic photosensitive optoelectronic devices comprising organic photoconductive materials, which comprise singlet fission host materials doped with triplet forming materials. There is also disclosed devices made from such materials, such as an organic photovoltaic cell, a photoconductor cell, a photodetector, organic photosensors, chemical sensors, and biological sensors. Methods of fabricating such devices are also disclosed. | 2012-09-13 |
20120228587 | PHOTOELECTRIC CONVERSION ELEMENT, PRODUCTION METHOD FOR A PHOTOELECTRIC CONVERSION ELEMENT, SOLID-STATE IMAGE SENSOR, PRODUCTION METHOD FOR A SOLID-STATE IMAGE SENSOR, ELECTRONIC APPARATUS, PHOTOCONDUCTOR, PRODUCTION METHOD FOR A PHOTOCONDUCTOR AND MULTILAYER TRANSPARENT PHOTOELECTRIC CONVERSION ELEMENT - Provided is a photoelectric conversion element including a photoconductor containing a complex of a conductive polymer and/or polymer semiconductor and a protein containing at least one dye having a long-lived excited state. | 2012-09-13 |
20120228588 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, DISPLAY DEVICE, AND ELECTRONIC APPARATUS - A light-emitting element includes an anode, a cathode, a luminescent layer between the anode and the cathode that emits light by applying a current between the anode and the cathode, and an electron transport layer between the cathode and the luminescent layer that transports electrons from the cathode to the luminescent layer. The electron transport layer includes an n-type transport layer and a buffer layer in contact with the n-type electron transport layer. The n-type electron transport layer contains a first electron transport material and an electron donor material and is disposed to the cathode side of the buffer layer. The buffer layer contains a second electron transport material and is disposed to the luminescent layer side of the n-type electron transport layer so as to prevent the electron injection material from diffusing from the n-type electron transport layer to the luminescent layer. | 2012-09-13 |
20120228589 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING APPARATUS, DISPLAY APPARATUS, AND ELECTRONIC DEVICE - A light-emitting element has an anode, a cathode, a first light-emitting layer, a second light-emitting layer, and a carrier-generating layer. The first light-emitting layer is disposed between the anode and the cathode and, when electric current flows between the anode and the cathode, emits light. The second light-emitting layer is disposed between the cathode and the first light-emitting layer and, when electric current flows between the anode and the cathode, emits light. The carrier-generating layer is disposed between the first light-emitting layer and the second light-emitting layer and can generate holes and electrons. The carrier-generating layer has two layers stacked in contact with each other, an n-type electron transport layer and an electron-accepting layer. The n-type electron transport layer can transport electrons and is formed to face the first light-emitting layer, whereas the electron-accepting layer can accept electrons and is formed to face the second light-emitting layer. The n-type electron transport layer and the electron-accepting layer both contain an electron injection material. | 2012-09-13 |
20120228590 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE AND ELECTRONIC APPARATUS - An organic electroluminescence display device includes a pixel isolating film that is provided over a substrate and has a plurality of apertures, and a plurality of pixels provided corresponding to the plurality of apertures. Each of the plurality of pixels has a first electrode, a functional layer including at least an organic light emitting layer, and a second electrode sequentially from the side of the substrate, and part or whole of the first electrode is separate from an edge part of the aperture on the side of the substrate. | 2012-09-13 |
20120228591 | ORGANIC ELECTROLUMINESCENT LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, an organic electroluminescent light emitting device includes a transparent substrate, an intermediate layer, a first electrode, an organic light emitting layer, and a second electrode. The intermediate layer includes a plurality of fine particles and a flattened layer. The fine particles are adhered to a major surface of the transparent substrate. The flattened layer covers the fine particles and has a refractive index different from a refractive index of the fine particles. The flattened layer is transparent. The first electrode is provided on the intermediate layer. The first electrode is transparent. The organic light emitting layer is provided on the first electrode. The second electrode is provided on the organic light emitting layer. | 2012-09-13 |
20120228592 | Light-Emitting Element, Light-Emitting Device, and Manufacturing Method of Light-Emitting Element - Provided is a highly reliable light-emitting element in which damage to an EL layer is reduced even when an auxiliary electrode for an upper electrode is provided. Further, a highly reliable light-emitting device in which luminance unevenness is suppressed is provided. The light-emitting element includes a first electrode; an insulating layer over the first electrode; an auxiliary electrode having a projection and a depression on a surface, over the insulating layer; a layer containing a light-emitting organic compound over the first electrode and the auxiliary electrode; and a second electrode over the layer containing the light-emitting organic compound. At least part of the auxiliary electrode is electrically connected to the second electrode. | 2012-09-13 |
20120228593 | ELECTROACTIVE MATERIALS - There is provided an electroactive material having Formula I | 2012-09-13 |
20120228594 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT DEVICE USING SAME - Disclosed is an organic electroluminescence device in which an organic thin film which is composed of one or more layers including at least a light-emitting layer is interposed between a cathode and an anode. Since at least one layer of the organic thin film contains a novel aromatic amine derivative, which has an asymmetric structure wherein two different amine units are bonded through a linking group, by itself or as a component of a mixture, molecules are hardly crystallized, thereby improving the production yield of the organic electroluminescence device. This organic electroluminescence device has a long life. | 2012-09-13 |
20120228595 | COMPOSITION FOR PRODUCING INSULATOR AND ORGANIC INSULATOR USING THE SAME - Disclosed herein is a composition for producing an insulator. More specifically, the composition comprises a silane-based organic-inorganic hybrid material containing one or more multiple bonds, an acrylic organic crosslinking agent and a silane-based crosslinking agent having six or more alkoxy groups. Also disclosed herein is an organic insulator produced using the insulator composition. The organic insulator is highly crosslinked to facilitate the fabrication of an organic thin film transistor in terms of processing. | 2012-09-13 |
20120228596 | LIGHT EMITTING PANEL DEVICE WHEREIN A PLURALITY OF PANELS RESPECTIVELY HAVING LIGHT EMITTING SECTIONS ARE CONNECTED, AND IMAGE DISPLAY DEVICE AND ILLUMINATING DEVICE PROVIDED WITH THE LIGHT EMITTING PANEL DEVICE | 2012-09-13 |
20120228597 | LIGHT-EMITTING ELECTROCHEMICAL DEVICE, A SYSTEM COMPRISING SUCH A DEVICE AND USE OF SUCH A DEVICE - A light-emitting device is provided having an anode, a cathode, and a light-emitting material contacting and separating the cathode and anode. Wherein the cathode includes a graphene and/or graphene oxide. | 2012-09-13 |
20120228598 | COMPOUND HAVING A SUBSTITUTED ANTHRACENE RING STRUCTURE AND PYRIDOINDOLE RING STRUCTURE, AND ORGANIC ELECTROLUMINESCENT DEVICE - The present invention relates to a compound having a substituted anthracene ring structure and a pyridoindole ring structure, which is represented by the following general formula (1) or the following general formula (2); and an organic electroluminescent device having a pair of electrodes and at least one organic layer interposed therebetween, in which the compound having a substituted anthracene ring structure and a pyridoindole ring structure, which is represented by the following general formula (1) or the following general formula (2), is used as a constituent material of the aforementioned at least one organic layer. | 2012-09-13 |
20120228599 | ORGANIC ELECTROLUMINESCENT DEVICES - This invention relates to an organic electroluminescent device ( | 2012-09-13 |
20120228600 | ORGANIC ELECTROLUMINESCENT DEVICES - The invention relates to an organic electroluminescent device ( | 2012-09-13 |
20120228601 | ORGANIC ELECTROLUMINESCENCE ELEMENT, METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENCE ELEMENT, AND ILLUMINATION DEVICE USING ORGANIC ELECTROLUMINESCENCE ELEMENT - Provided is an organic electroluminescence element containing a light transmissive base material laminated thereon a transparent electrode, a light emitting layer and a counter electrode in this order, wherein the light transmissive base material contains a light transmissive resin substrate (resin substrate B) provided with a hard coat layer on both surfaces of the light transmissive resin substrate, the hard coat layers containing metal oxide nano particles; and the transparent electrode is formed on one hard coat layer (H1); and a rugged structure is formed on one surface of the other hard coat layer (H2), the one surface being opposite to another surface of the other hard coat layer (H2) which is contacted with the light transmissive resin substrate (resin substrate B). | 2012-09-13 |
20120228602 | ORGANIC EL DEVICE AND METHOD FOR MANUFACTURING SAME - Disclosed is an organic EL device which comprises: a pixel electrode that is arranged on a substrate; a hole injection layer that is arranged on the pixel electrode and has a photocatalytic function; an organic functional layer that is formed on the hole injection layer by a coating method; a bank made of a fluorine-containing resin and defines the region where the organic functional layer is arranged; and a counter electrode that is arranged so as to cover the bank and the organic functional layer. Due to the photocatalytic function of the hole injection layer, the bank residuals can be removed by low-energy ultraviolet light that has a longer wavelength (300-400 nm) than conventional high-energy ultraviolet light that has a short wavelength (254 nm or 172 nm). | 2012-09-13 |
20120228603 | ORGANIC EL DISPLAY - An object of the present invention is to provide an organic EL display that has a reduced optical loss and high efficiency, and can be manufactured by an inexpensive method. The organic EL display of the present invention is formed by bonding an organic EL element substrate including a substrate, reflective electrode, organic EL layer, separation wall, barrier layer, transparent electrode, and color conversion layer; and a sealing substrate together, wherein: the reflective electrode includes a plurality of partial electrodes; the organic EL layer is formed on the reflective electrode and includes a plurality of parts separated by the separation wall; the transparent electrode is formed on the organic EL layer; the barrier layer covers the separation wall and the transparent electrode, and has a recessed part in a location corresponding to the reflective electrode; and the color conversion layer is formed in the recessed part. | 2012-09-13 |
20120228604 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel includes a gate electrode on an insulating substrate, a gate insulating layer on the gate electrode, a semiconductor on the gate insulating layer, a thin film transistor including a source electrode and a drain electrode on the oxide semiconductor, and a pixel electrode which is connected to the drain electrode. The semiconductor includes a first layer having a relatively low fluorine content and a second layer having a relatively high fluorine content. The second layer of the semiconductor is only between the first layer of the semiconductor and the source electrode, and between the first layer of the semiconductor and the drain electrode. | 2012-09-13 |
20120228605 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device includes an oxide semiconductor film including a pair of first regions, a pair of second regions, and a third region; a pair of electrodes in contact with the oxide semiconductor film; a gate insulating film over the oxide semiconductor film; and a gate electrode provided between the pair of electrodes with the gate insulating film interposed therebetween. The pair of first regions overlap with the pair of electrodes, the third region overlaps with the gate electrode, and the pair of second regions are formed between the pair of first regions and the third region. The pair of second regions and the third region each contain nitrogen, phosphorus, or arsenic. The pair of second regions have a higher element concentration than the third region. | 2012-09-13 |
20120228606 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device includes an oxide semiconductor film having a first region and a pair of second regions facing each other with the first region provided therebetween, a gate insulating film over the oxide semiconductor film, and a first electrode overlapping with the first region, over the gate insulating film. The first region is a non-single-crystal oxide semiconductor region including a c-axis-aligned crystal portion. The pair of second regions is an oxide semiconductor region containing dopant and including a plurality of crystal portions. | 2012-09-13 |
20120228607 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost. | 2012-09-13 |
20120228608 | SPUTTERING TARGET AND THIN FILM TRANSISTOR EQUIPPED WITH SAME - A sintered body including an oxide that includes In, Ga and Zn at the following atomic ratio and includes a compound having as a main component a homologous crystal structure represented by InGaO | 2012-09-13 |
20120228609 | TEST CIRCUIT FOR TESTING SIGNAL RECEIVING UNIT, IMAGE PICKUP APPARATUS, METHOD OF TESTING SIGNAL RECEIVING UNIT, AND METHOD OF TESTING IMAGE PICKUP APPARATUS - It is disclosed that, as an embodiment, a test circuit includes a test signal supply unit configured to supply a test signal via a signal line to signal receiving units provided in a plurality of columns, wherein the test signal supply unit is a voltage buffer or a current buffer, and the test circuit has a plurality of test signal supply units and a plurality of signal lines, and wherein at least one test signal supply unit is electrically connected to one signal line different from a signal line to which another test signal supply unit is electrically connected. | 2012-09-13 |
20120228610 | Display Panel - A display panel includes a plurality of pads configured to provide a driver thereon, a plurality of first contacts respectively connected to the plurality of pads, a plurality of second contacts respectively provided so as to be opposed to the plurality of first contacts, a polysilicon layer configured to form a plurality of polysilicon films that are respectively extended to connect the plurality of first contacts and the plurality of second contacts to each other, and a gate metal layer different from the polysilicon layer. Each of a plurality of transistors is formed at a position where the to gate metal layer traverses the polysilicon layer, and a plurality of transistor groups are arranged in a zigzag pattern. Each of the plurality of transistor groups include three adjacent transistors of the plurality of transistors. | 2012-09-13 |
20120228611 | BIPOLAR JUNCTION TRANSISTOR WITH A SELF-ALIGNED EMITTER AND BASE - Methods for fabricating bipolar junction transistors with self-aligned emitter and extrinsic base, bipolar junction transistors made by the methods, and design structures for a BiCMOS integrated circuit. The bipolar junction transistor is fabricated using a sacrificial emitter pedestal that provides a sacrificial mandrel promoting self-alignment between the emitter and the extrinsic base. The sacrificial emitter pedestal is subsequently removed to open an emitter window extending to the intrinsic base. An emitter is formed in the emitter window that lands on the intrinsic base. | 2012-09-13 |
20120228612 | COMPOSITE BASE INCLUDING SINTERED BASE AND BASE SURFACE FLATTENING LAYER, AND COMPOSITE SUBSTRATE INCLUDING THAT COMPOSITE BASE AND SEMICONDUCTOR CRYSTALLINE LAYER - A composite base of the present invention includes a sintered base and a base surface flattening layer disposed on the sintered base, and the base surface flattening layer has a surface RMS roughness of not more than | 2012-09-13 |
20120228613 | METHOD OF MANUFACTURING SEMICONDUCTOR WAFER, AND COMPOSITE BASE AND COMPOSITE SUBSTRATE FOR USE IN THAT METHOD - A method of manufacturing a semiconductor wafer of the present invention includes the steps of: obtaining a composite base by forming a base surface flattening layer having a surface RMS roughness of not more than 1.0 nm on a base; obtaining a composite substrate by attaching a semiconductor crystal layer to a side of the composite base where the base surface flattening layer is located; growing at least one semiconductor layer on the semiconductor crystal layer of the composite substrate; and obtaining the semiconductor wafer including the semiconductor crystal layer and the semiconductor layer by removing the base surface flattening layer by wet etching and thereby separating the semiconductor crystal layer from the base. Thus, a method of manufacturing a semiconductor wafer capable of efficiently manufacturing the semiconductor wafer regardless of the type of a base, and a composite base and a composite substrate suitably used in that manufacturing method are provided to efficiently manufacture a semiconductor device. | 2012-09-13 |
20120228614 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - According to one embodiment, a semiconductor device is disclosed. The device includes a semiconductor substrate, and an interconnection above the semiconductor substrate. The interconnection includes a co-catalyst layer, a catalyst layer on the co-catalyst layer, and a graphene layer on the catalyst layer. The co-catalyst layer includes a portion contacting the catalyst layer. The portion has a face-centered cubic structure with a (111) plane oriented parallel to a surface of the semiconductor substrate. The catalyst layer has a face-centered cubic structure with a (111) plane oriented parallel to the surface of the semiconductor substrate. | 2012-09-13 |
20120228615 | SEMICONDUCTOR DEVICE - A semiconductor device in which a semiconductor layer is formed over a gate electrode with a large aspect ratio, thereby obtaining a channel length of a transistor which hardly causes a short-channel effect even when the transistor is miniaturized. A lower electrode is provided under the gate electrode with an insulating layer provided therebetween so that the electrode overlaps with the semiconductor layer. A potential (electric field) of the lower electrode imparts a conductivity type to the semiconductor layer overlapping with the lower electrode, so that a source region and a drain region are formed in the semiconductor layer. The gate electrode serves as a shield, so that a region in the semiconductor layer, which faces the gate electrode with the gate insulating layer provided therebetween, is not influenced by the electric field from the lower electrode. | 2012-09-13 |
20120228616 | THIN FILM TRANSISTOR COMPOSITIONS, AND METHODS RELATING THERETO - The present disclosure is directed to a thin film transistor composition. The thin film transistor composition has a semiconductor material and a substrate. The substrate is composed of a polyimide and a sub-micron filler. The polyimide is derived from at least one aromatic dianhydride component selected from rigid rod dianhydride, non-rigid rod dianhydride and combinations thereof, and at least one aromatic diamine component selected from rigid rod diamine, non-rigid rod diamine and combinations thereof. The mole ratio of dianhydride to diamine is 48-52:52-48 and the ratio of X:Y is 20-80:80-20 where X is the mole percent of rigid rod dianhydride and rigid rod diamine, and Y is the mole percent of non-rigid rod dianhydride and non-rigid rod diamine. The sub-micron filler is less than 550 nanometers in at least one dimension; has an aspect ratio greater than 3:1; is less than the thickness of the film in all dimensions. | 2012-09-13 |
20120228617 | FLEXIBLE DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a flexible display device includes forming a heat generator on a carrier substrate, forming a flexible substrate on the heat generator, forming a thin film transistor on the flexible substrate, forming a light emitting element connected to the thin film transistor, and separating the flexible substrate from the heat generator by application of heat to the flexible substrate, the application of heat including generation of heat by the heat generator. | 2012-09-13 |
20120228618 | Thin Film Transistor Structure - A thin film transistor (TFT) structure is provided. The TFT comprises a gate, a first electrode, a second electrode, a dielectric layer, and a channel layer. By overlapping the area between the first electrode and the gate, the TFT structure acquires a parasitic capacitor that is unaffected by manufacture deviations. Therefore, the TFT needs no compensation capacitor, thereby, increasing the aperture ratio of the TFT. | 2012-09-13 |
20120228619 | DISPLAY PANEL AND METHOD FOR MANUFACTURING THE SAME - A display panel includes; a lower gate line, a lower data line disposed substantially perpendicular to the lower gate line, a thin film transistor (“TFT”) connected to the lower gate line and the lower data line, an insulating layer disposed on the lower gate line, the lower data line, and the TFT and having a plurality of trenches exposing the lower gate line and the lower data line, an upper gate line disposed in the trench on the lower gate line, an upper data line disposed in the trench on the lower data line, and a pixel electrode connected to the TFT. | 2012-09-13 |
20120228620 | THIN FILM TRANSISTOR ARRAY PANEL FOR A LIQUID CRYSTAL DISPLAY - A plurality of gate lines formed on an insulating substrate, each gate line including a pad for connection to an external device; a plurality of data lines intersecting the gate lines and insulated from the gate lines, each data line including a pad for connection to an external device; and a conductor overlapping at least one of the gate lines and the data lines are included. An overlapping distance of the gate lines or the data lines and a width of the conductor decreases as the length of the gate lines or the data lines increases. Accordingly, the difference in the RC delays due to the difference of the length of the signal lines is compensated to be reduced. | 2012-09-13 |
20120228621 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - An object of this invention is to provide a semiconductor device in which TFTs with high mobility are arranged in both of display and peripheral circuit areas. A semiconductor device fabricating method according to the present invention includes the steps of: irradiating an amorphous silicon layer ( | 2012-09-13 |
20120228622 | LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING THEREOF AND ELECTRONIC APPLIANCE - An object of the invention is to provide a method for manufacturing a light emitting device capable of reducing deterioration of elements due to electrostatic charge caused in manufacturing the light emitting device. Another object of the invention is to provide a light emitting device in which defects due to the deterioration of elements caused by the electrostatic charge are reduced. The method for manufacturing the light emitting device includes a step of forming a top-gate type transistor for driving a light emitting element. In the step of forming the top-gate type transistor, when processing a semiconductor layer, a first grid-like semiconductor layer extending in rows and columns is formed over a substrate. The plurality of second island-like semiconductor layers are formed between the first semiconductor layer. The plurality of second island-like second semiconductor layers serve as an active layer of the transistor. | 2012-09-13 |
20120228623 | DISPLAY DEVICE AND ELECTRONIC DEVICE - Disclosed herein is a display device including: a thin film transistor; and a wiring layer; wherein the thin film transistor includes a semiconductor layer, a gate electrode disposed so as to be opposed to the semiconductor layer, the gate electrode being different in thickness from the wiring layer, and a gate insulating film between the semiconductor layer and the gate electrode. | 2012-09-13 |
20120228624 | IMAGE DISPLAY DEVICE - The image display device according to the present invention is an image display device where a pixel unit and an external connection terminal unit are provided on a substrate (SUB), and the pixel unit and the external connection terminal unit are connected by an aluminum wire (LN), having; an organic protective film (OPAS) directly covering the aluminum wire, except a contact hole (CH) of the external connection terminal unit and part of the pixel unit; and an ITO film (ITO) provided on the upper side of the organic protective film so as to cover the aluminum wire, including the external connection terminal unit and reaching to the pixel unit. | 2012-09-13 |
20120228625 | NITRIDE SEMICONDUCTOR DEVICE - According to one embodiment, a nitride semiconductor device includes a first, a second, a third and a fourth transistor of n-type channel and a resistor. The first transistor has a first gate, a first source, and a first drain. The second transistor has a second gate, a second source electrically connected to the first gate, and a second drain. The third transistor has a third gate, a third source electrically connected to the first source, and a third drain electrically connected to the first gate and the second source. The fourth transistor has a fourth gate electrically connected to the third gate, a fourth source electrically connected to the first source and the third source, and a fourth drain electrically connected to the second gate. The resistor has one end electrically connected to the second drain and one other end electrically connected to the second gate and the fourth drain. | 2012-09-13 |
20120228626 | SEMICONDUCTOR DEVICE AND ITS FABRICATION METHOD - In a semiconductor device including a stack structure having heterojunction units formed by alternately stacking GaN (gallium nitride) films and barrier films which are different in forbidden band width, a first electrode formed in a Schottky barrier contact with one sidewall of the stack structure, and a second electrode formed in contact with the other sidewall, an oxide film is interposed between the first electrode and the barrier films. Therefore, the reverse leakage current is prevented from flowing through defects remaining in the barrier films due to processing of the barrier films, so that a reverse leakage current of a Schottky barrier diode is reduced. | 2012-09-13 |
20120228627 | METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR CRYSTAL, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND SEMICONDUCTOR WAFER - A method for producing a compound semiconductor crystal, includes; a sacrificial layer formation step of forming a sacrificial layer containing C | 2012-09-13 |
20120228628 | SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME - A semiconductor device and methods of fabricating semiconductor devices are provided. A method involves forming a semiconductor substrate on a source region and a drain region, the semiconductor substrate comprises a first crystal. The method also involves forming an epitaxial layer of a second crystal on the semiconductor substrate. The first crystal has a first lattice constant and the second crystal has a second lattice constant. The first epitaxial layer does not touch a spacer or a gate electrode. Forming the epitaxial layer can comprise forming a first epitaxial layer and a second epitaxial layer, wherein the first epitaxial layer has a conductivity type impurity that is less than the conductivity type impurity of the second epitaxial layer. | 2012-09-13 |
20120228629 | Thyristors, Methods of Programming Thyristors, and Methods of Forming Thyristors - Some embodiments include thyristors having first and second electrode regions, first and second base regions, and material having a bandgap of at least 1.2 eV in at least one of the regions. The first base region is between the first electrode region and the second base region, and the second base region is between the second electrode region and the first base region. The first base region interfaces with the first electrode region at a first junction, and interfaces with the second base region at a second junction. The second base region interfaces with the second electrode region at a third junction. A gate is along the first base region, and in some embodiments does not overlap either of the first and second junctions. Some embodiments include methods of programming thyristors, and some embodiments include methods of forming thyristors. | 2012-09-13 |
20120228630 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device according to an embodiment includes a first electrode and a first silicon carbide (SiC) semiconductor part. The first electrode uses a conductive material and the first silicon carbide (SiC) semiconductor part is connected to the first electrode, in which at least one element of magnesium (Mg), calcium (Ca), strontium (Sr), and barium (Ba) is contained in an interface portion with the first electrode in such a way that a surface density thereof peaks, and whose conduction type is a p-type. | 2012-09-13 |
20120228631 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes: a silicon carbide substrate including first and second principal surfaces; a first conductive-type first silicon carbide layer provided on the first principal surface of the silicon carbide substrate; a second conductive-type first silicon carbide region formed on a surface of the first silicon carbide layer; a first conductive-type second silicon carbide region formed on a surface of the first silicon carbide region; a second conductive-type third silicon carbide region formed on the surface of the first silicon carbide region; a gate insulating film continuously formed on the surfaces of the first silicon carbide layer, the first silicon carbide region, and the second silicon carbide region; a first electrode formed of silicon carbide formed on the gate insulating film; a second electrode formed on the first electrode; an interlayer insulating film for covering the first and second electrodes; a third electrode electrically connected to the second silicon carbide region and the third silicon carbide region; and a fourth electrode formed on the second principal surface of the silicon carbide substrate. | 2012-09-13 |
20120228632 | SEMICONDUCTOR DEVICE - A semiconductor device of an embodiment includes: a semiconductor substrate; a field-effect transistor formed on the semiconductor substrate; and a diode forming area which is adjacent to a forming area of the field-effect transistor, wherein the diode forming area is insulated from the forming area of the transistor on the semiconductor substrate, and includes a first diode electrode in which a gate electrode of the field-effect transistor is placed in Schottky barrier junction and/or ohmic contact with the semiconductor substrate through a bus wiring or a pad; and a second diode electrode in which a source electrode of the field-effect transistor is placed in ohmic contact and/or Schottky barrier junction with the semiconductor substrate through a bus interconnection or a pad to form a diode between the gate electrode and the source electrode. | 2012-09-13 |
20120228633 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a semiconductor substrate; a first conductivity type semiconductor layer that is formed on the substrate and is made of silicon carbide; an active area formed on a surface of the semiconductor layer; a first semiconductor area of a second conductivity type formed on the surface of the semiconductor layer to surround the active area; a second semiconductor area, provided to adjoin an outer side of the first semiconductor area on the surface of the semiconductor layer and surround the first semiconductor area, in which a second conductivity type impurity area having the same impurity concentration and the same depth as those of the first semiconductor area is formed in a mesh shape; a first electrode provided on the active area; and a second electrode provided on the rear surface of the semiconductor substrate. | 2012-09-13 |
20120228634 | COMBINED SEMICONDUCTOR DEVICE - A combined semiconductor device performs low conduction loss and low recovery loss characteristics suited to a circuit technology in a soft switching mode at a low cost. The device has a SJ-MOSFET and a wide band gap Schottky barrier diode connected in parallel to a built-in body diode in the SJ-MOSFET. The device includes a MOS type semiconductor element having a superjunction structure and a wide band gap Schottky barrier diode antiparallel-connected to the MOS type semiconductor element. The MOS type semiconductor element has a resistance section series-connected to a built-in body diode in the element. A resistance value of the resistance section is such a value that the forward voltage drop of the built-in body diode in the MOS type semiconductor element is higher than the forward voltage drop of the wide band gap Schottky barrier diode at a rated current of the MOS type semiconductor element. | 2012-09-13 |
20120228635 | SEMICONDUCTOR RECTIFIER DEVICE - A semiconductor rectifier device using an SiC semiconductor at least includes: an anode electrode; an anode area that adjoins the anode electrode and is made of a second conductivity type semiconductor; a drift layer that adjoins the anode area and is made of a first conductivity type semiconductor having a low concentration; a minority carrier absorption layer that adjoins the drift layer and is made of a first conductivity type semiconductor having a higher concentration than that of the drift layer; a high-resistance semiconductor area that adjoins the minority carrier absorption layer, has less thickness than the drift layer and is made of a first conductivity type semiconductor having a concentration lower than that of the minority carrier absorption layer; a cathode contact layer that adjoins the semiconductor area; and a cathode electrode. | 2012-09-13 |
20120228636 | SCHOTTKY BARRIER DIODE - A third insulating layer is formed in a periphery region of a substrate over a first surface (main surface) of the substrate so as to straddle a second semiconductor layer closest to a guard ring layer and a second semiconductor layer closest to the second semiconductor layer. In other words, the third insulating layer is formed to cover a portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. Thereby, the third insulating layer electrically insulates the metal layer from the portion of the first semiconductor layer, which is exposed to the first surface (main surface) of the substrate and which is between the second semiconductor layers. | 2012-09-13 |
20120228637 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device of an embodiment includes a first conductive type silicon carbide substrate having first and second main surfaces, a first conductive type silicon carbide layer formed on the first main surface, a second conductive type first silicon carbide region formed in the silicon carbide layer, and a first conductive type second silicon carbide region formed in the first silicon carbide region. The device includes a trench penetrating through the first and second silicon carbide regions, and a second conductive type third silicon carbide region formed on a bottom and a side surface of the trench. The third silicon carbide region is in contact with the first silicon carbide region, and is formed between the trench and the silicon carbide layer. In addition, the device includes a gate insulating film formed in the trench, a gate electrode, a first electrode, and a second electrode. | 2012-09-13 |
20120228638 | Methods of Fabricating Silicon Carbide Devices Having Smooth Channels and Related Devices - Methods of forming silicon carbide power devices are provided. An n | 2012-09-13 |
20120228639 | SELF ALIGNED DEVICE WITH ENHANCED STRESS AND METHODS OF MANUFACTURE - A method includes forming a stressed Si layer in a trench formed in a stress layer deposited on a substrate. The stressed Si layer forms an active channel region of a device. The method further includes forming a gate structure in the active channel region formed from the stressed Si layer. | 2012-09-13 |
20120228640 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - There are provided a high-quality semiconductor device having stable characteristics and a method for manufacturing such a semiconductor device. The semiconductor device includes: a substrate having a main surface; and a silicon carbide layer formed on the main surface of the substrate and including a side surface inclined relative to the main surface. The side surface substantially includes a {03-3-8} plane. The side surface includes a channel region. | 2012-09-13 |
20120228641 | PROTECTIVE SUBSTRATE FOR A DEVICE THAT COLLECTS OR EMITS RADIATION - This substrate ( | 2012-09-13 |
20120228642 | METHOD OF TREATING AN OXIDIZED LAYER OF METAL NITRIDE - The present arrangement provides a method of treating an oxidized layer of metal nitride, including oxidizing a layer ( | 2012-09-13 |
20120228643 | LIGHT EMITTING APPARATUS AND METHOD FOR MANUFACTURING THE SAME - The light-emitting apparatus comprising thin film transistors and light emitting elements, comprises; a second inorganic insulation layer on a gate electrode, a first organic insulation layer on the second inorganic insulation layer, a third inorganic insulation layer on the first organic insulation layer, an anode on the third inorganic insulation layer, a second organic insulation layer overlapping with the end of the anode and having an inclination angle of 35 to 45 degrees, a fourth inorganic insulation layer on the upper and side surfaces of the second organic insulation layer and having an opening over the anode, an organic compound layer in contact with the anode and the fourth inorganic insulation layer and containing light-emitting material, and a cathode in contact with the organic compound layer, wherein the third and the fourth inorganic insulation layers comprise silicon nitride or aluminum nitride. | 2012-09-13 |
20120228644 | Encapsulation of Organic Devices - Presented an organic light-emitting device (OLED) that includes at least one active region, at least one organic layer, a first glass plate on which the at least one active region is applied, and a second glass plate. The active region is disposed between the first and the second glass plates. The first and second glass plates are at least partially transparent in the near infrared spectral range. The OLED further includes a bonding material that includes a solder glass and is disposed between the first and second glass plates. The bonding material forms at least one frame that surrounds the active region and mechanically connects the first glass plate with the second glass plate and seals the active region. The bonding material absorbs near infrared radiation. The OLED further includes spacer particles that have a mean diameter that maintains a height between the first and second glass plates. | 2012-09-13 |
20120228645 | LED LAMP STRIP AND MANUFACTURING PROCESS THEREOF - A process of manufacturing an LED lamp strip includes the steps of forming a plurality of through holes on an adhesive tape, mounting the adhesive tape to a top side of a scrollable lead frame, bonding a plurality of LED chips to the top side of the scrollable lead frame according to the positions of the through holes, packaging the LED chips respectively, and finally cutting the scrollable lead frame. In light of this, the LED lamp strip can be produced under the circumstances of low production cost and less production time. | 2012-09-13 |
20120228646 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MAKING THE SAME - An LED package includes a substrate; a plurality of LED units formed on the substrate; and a phosphor tape arranged on the LED units. Light from the LED units travels to an external environment through the phosphor tape. The phosphor tape has phosphor particles evenly distributed therein. A method for forming the LED package is also provided. | 2012-09-13 |
20120228647 | ORGANIC ELECTROLUMINESCENT ELEMENT - The present invention provides an organic EL element configured to stably emit light while suppressing total reflection that occurs at an electrode. This organic EL element includes a pair of electrodes and one or more organic layers provided between the electrodes, and includes a light-emitting layer as the one or more organic layers. Surfaces of the pair of electrodes facing each other are flat. At least one organic layer of the one or more organic layers has a periodic structure that makes the traveling direction of light, traveling in the direction generally perpendicular to the thickness direction of the light-emitting layer, inclined to the thickness direction. The periodic structure has a periodic configuration that is arranged with a two-dimensional period in a plane that is perpendicular to the thickness direction of the light-emitting layer. | 2012-09-13 |
20120228648 | LIGHT-EMITTING DEVICE, LIGHT-EMITTING APPARATUS, DISPLAY DEVICE AND ELECTRONIC APPARATUS - A light-emitting device includes an anode, a cathode, a first phosphorescent layer and a fluorescent layer that are provided between the anode and the cathode and emit phosphorescent light and fluorescent light, respectively, upon energization of the anode and the cathode, and an intermediate layer provided between the first phosphorescent layer and the fluorescent layer, the intermediate layer including a hole transport layer and an electron transport layer that are in contact with each other, the electron transport layer being located on the anode side, the hole transport layer being located on the cathode side. | 2012-09-13 |
20120228649 | LED MODULE, METHOD FOR MANUFACTURING THE SAME, AND LED CHANNEL LETTER INCLUDING THE SAME - Disclosed herein is a method for manufacturing a light emitting diode (LED) module, the method including: disposing a circuit board at a molding space formed by an upper mold and a lower mold; adding a filling material to the molding space; hardening the filling material to form a molding cover covering at least a portion of an upper surface, a lower surface, and a side surface of the circuit board, the molding cover having an opening exposing the lower surface of the circuit board; removing the upper mold and the lower mold from the circuit board; and disposing an LED on the upper surface of the circuit board. | 2012-09-13 |
20120228650 | Light Emitting Diode Emitter Substrate with Highly Reflective Metal Bonding - The present disclosure provides one embodiment of a method for fabricating a light emitting diode (LED) package. The method includes forming a plurality of through silicon vias (TSVs) on a silicon substrate; depositing a dielectric layer over a first side and a second side of the silicon substrate and over sidewall surfaces of the TSVs; forming a metal layer patterned over the dielectric layer on the first side and the second side of the silicon substrate and further filling the TSVs; and forming a plurality of highly reflective bonding pads over the metal layer on the second side of the silicon substrate for LED bonding and wire bonding. | 2012-09-13 |