36th week of 2022 patent applcation highlights part 55 |
Patent application number | Title | Published |
20220285101 | MULTI-LAYER CERAMIC ELECTRONIC COMPONENT - A multi-layer ceramic electronic component includes a multi-layer ceramic electronic component main body including a multi-layer body including stacked ceramic layers, stacked internal electrode layers, first and second main surfaces, first and second side surfaces, and first and second end surfaces, first and second external electrodes respectively on sides where the first and second end surfaces are located, and first and second metallic terminals respectively connected to the first and second external electrodes. The multi-layer ceramic electronic component main body and at least portion of the first and second metallic terminals are covered with an external material. The second main surface is connected to the metallic terminals. The first and second external electrodes cover a portion of the second main surface. A gap is provided between the multi-layer body and tips of the first and second external electrodes. The external material is in the gap. | 2022-09-08 |
20220285102 | MULTILAYER CAPACITOR - A multilayer capacitor includes an element body, and a pair of side surfaces and a pair of main surfaces; and a pair of external electrodes. The element body includes an inner layer portion in which a plurality of internal electrodes and a plurality of dielectric layers are alternately stacked in a second direction where the pair of main surfaces face each other, and a pair of outer layer portions disposed outside the inner layer portion in the second direction. On at least one of the pair of end surfaces, the internal electrode of the inner layer portion protrudes outward in the first direction from the outer layer portion by a predetermined protrusion amount. A ratio of the protrusion amount to a dimension of the element body in the second direction ranges from 11,000 ppm to 16,000 ppm. | 2022-09-08 |
20220285103 | PHOTOELECTRIC CONVERSION ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a photoelectric conversion element includes a first conductive layer, a second conductive layer, an a photoelectric conversion layer located between the first conductive layer and the second conductive layer. The photoelectric conversion layer includes Sn and Pb. The photoelectric conversion layer includes a first partial region, a second partial region between the first partial region and the second conductive layer, and a third partial region between the second partial region and the second conductive layer. The first partial region includes a first Sn concentration and a first Pb concentration. The second partial region includes at least one of a second Sn concentration or a second Pb concentration. The second Sn concentration is less than the first Sn concentration. The second Pb concentration is greater than the first Pb concentration. The third partial region includes Sn, oxygen, and Pb. | 2022-09-08 |
20220285104 | ELECTROCHEMICAL DEVICE AND METHOD FOR MANUFACTURING SAME - An electrochemical device includes a positive electrode having a positive electrode material layer containing a conductive polymer doped with a first anion and a second anion, a negative electrode having a negative electrode material layer storing and releasing lithium ions, and a nonaqueous electrolytic solution having lithium ionic conductivity. The second anion is more easily dedoped from the conductive polymer than the first anion. At an end period of charge of the electrochemical device, a number of moles M | 2022-09-08 |
20220285105 | TERMINAL COVER - A terminal cover to cover a terminal to which an electric wire is to be connected, the terminal cover includes: an outer frame having an outer frame notch; and an inner frame provided within the outer frame notch in the outer frame, the inner frame having an inner frame notch smaller than the outer frame notch. Further, the outer frame and the inner frame are formed thinner than a peripheral portion and are connected to each other with cutoff portions that are bendable, twistable, or cuttable with a cutting tool, and the terminal is viewed through the inner frame notch. | 2022-09-08 |
20220285106 | Actuating Unit for an Electric Switching Element - An actuating unit for an electrical switching element includes an actuating surface for actuating the electrical switching element, which is integrally a part of a surface of a housing for the electrical switching element, and is adapted to be deformed towards an interior of the housing for actuating the electrical switching element; an actuating pin integral with said actuating surface; and mechanically coupled to said actuating surface; and adapted to mechanically couple said actuating surface to said electrical switching element to actuate said electrical switching element; and a limiting pin integral with the actuating surface; and mechanically coupled to the actuating surface; and adapted to limit deformation of the actuating surface. | 2022-09-08 |
20220285107 | DEVICE WITH MOVABLE BUTTONS OR SWITCHES AND TACTILE IDENTIFIER - The present teachings provide for a device with a membrane and an underlying switch, an underlying switch actuator, or both that has a unique tactile pattern that is felt through the membrane when the membrane is aligned with the switch, switch actuator, or both, corresponding to the electrical state of the device. The membrane, the switch, the switch actuator or a combination thereof can be repositioned from a first position to a second position so that a different tactile feel is present through the membrane corresponding to a second electrical state. | 2022-09-08 |
20220285108 | OPERATING MEMBER WITH MOVABLY MOUNTED ACTUATING PART AND IMPROVED GUIDANCE MECHANISM FOR THE PARALLEL GUIDANCE OF THE ACTUATING PART - The present disclosure relates to an operating member including: a support; an actuating part, which defines an actuating surface is mounted on the support by a mount to be movable relative to the support, by manual actuation against a resetting force, while carrying out an actuating movement from a rest position into a depressed position; a detector having at least one force sensor, wherein the detector is adapted to detect at least one position of the actuating part; wherein the mount includes a guidance mechanism having at least one pair of coupled levers, wherein the levers are each pivotably mounted on the support by a first pivot joint and on the actuating part—by a second pivot joint to cause a pivoting movement of the at least one pair of coupled levers by the actuating movement, wherein the guidance mechanism further includes at least one coupling rod. | 2022-09-08 |
20220285109 | ELECTRICAL SWITCH WITH ROCKER AND SMART IDENTIFICATION FEATURES - An electrical switch with identifying features. Embodiments include an electrical switch that comprises a rocker that is pivotable between a first position and a second position such that the electrical circuit is energized when the rocker is in the first position and deenergized when the rocker is in the second position, a cover arranged within the rocker such that a front surface of the cover is viewable by a user; an interchangeable label arrangeable a rear surface of the cover, a light pipe arrangeable proximate a rear surface of the interchangeable label, and an illuminating element. In embodiments, the electrical switch may include a tactile switch arranged proximate a rear surface of the light pipe, such that the tactile switch can be activated by an application of rearward pressure to the cover. | 2022-09-08 |
20220285110 | MEDIUM VOLTAGE SWITCHING APPARATUS - Disclosed herein is a switching apparatus for medium voltage electric systems, said switching apparatus including one or more electric poles. For each electric pole, said switching apparatus includes: a first pole terminal, a second pole terminal, and a ground terminal; a first fixed contact member and a first movable contact member, said first fixed contact member being electrically connected to said first pole terminal and including a first fixed contact, said first movable contact member being electrically connected to said second pole terminal and including a first movable contact; a second fixed contact member and a second movable contact member, said second fixed contact member being electrically connected to said first pole terminal and including a second fixed contact, said second movable contact member including a second movable contact; a vacuum chamber, in which said second fixed contact and said second movable contact are enclosed; and a motion transmission mechanism. | 2022-09-08 |
20220285111 | HIGH VOLTAGE ELECTRIC POWER SWITCH WITH CARBON ARCING ELECTRODES AND CARBON DIOXIDE DIELECTRIC GAS - A high voltage electric switch includes contacts with graphite carbon electrode forming the arc gap. In addition, the carbon contacts are located in a chamber containing at least 60% carbon dioxide (CO2) as a dielectric gas to achieve improved arc interrupting performance. In conventional switches, the metallic contacts introduce metallic vapors into the arc plasma that inhibits the ability of the dielectric gas to interrupt high voltage, high current arcs. As the element carbon is inherently present in CO2 gas, the addition of vapors from the carbon electrodes into the dielectric gas does not significantly interfere with the dielectric arc-interrupting performance of the CO2 dielectric gas. | 2022-09-08 |
20220285112 | MEMBRANE PRESSURE SWITCH - The invention relates to a membrane pressure switch ( | 2022-09-08 |
20220285113 | FALL DETECTION SENSOR - A compact fall detection sensor includes a case. A magnet is housed in the case. A reed switch with a pair of reeds are integrally positioned around the central axis of the case at the bottom of the case. In an upright state, the magnet is gravitationally positioned in the longitudinal direction of the reed switch around the central axis of the curved surface of the case, each magnetic pole magnetizing the corresponding reed of the reed switch, allowing one of the reeds to be magnetized to N pole and the other reed to S pole to turn on the switch. When inclined from the upright state, the magnet slides along the curved surface of the case and deviates from the central axis, to position only one of the magnetic poles of the magnet around the central axis to turn off the reed switch. | 2022-09-08 |
20220285114 | INTERRUPTION DEVICE - A disconnect device includes: a conductor connectable to an external conductive path; a housing that has an internal space and accommodates at least a part of the conductor; and a cooling body that is disposed in the internal space and cools an arc generated in the internal space. The cooling body includes a porous body configured with at least one of a metal oxide and an inorganic oxide. | 2022-09-08 |
20220285115 | PYROTECHNIC SWITCH - A pyrotechnic switch having a casing, at least one electrical conductor passing through the casing, a pistonhoused in the casing, the piston-casing assembly being designed to cut the electrical conductor at least at three separate locations, so as to form at least two free conductive strands, separate from the rest of the electrical conductor, a pyrotechnic actuator designed to force the piston to cut the electrical conductor, wherein the piston-casing assembly is designed to cut the electrical conductor such that each free strand has at least one base portion with either no or two folded wings arranged on either side of the base portion, and to create at least one free strand with two folded wings . | 2022-09-08 |
20220285116 | CURRENT SOURCE CONTACTOR DRIVES WITH ECONOMIZERS - A system includes a contactor operatively connected to a coil for actuating the contactor to open and close a circuit. A pass element includes a source, a drain, and a gate, wherein the drain is electrically connected to the coil, and wherein the coil is in series between the pass element and ground. A voltage source is connected to the source of the pass element to pass current into the coil when the pass element is in a pass state. A current source control circuit with economizer is operatively connected to the gate of the pass element. A delay circuit is operatively connected to the current source control circuit with economizer and to a command line to command a lower current for holding the contactor closed after a delay has expired for the contactor to transition. | 2022-09-08 |
20220285117 | CIRCUIT BREAKER TO SWITCH BETWEEN TWO ENERGY SOURCES - A device and method for switching between a first power source and a second power source. The device includes a first terminal, a second terminal, and a third terminal that connect to the first power source, a load, and the second power source respectively. A first switch and a breaker circuitry connect the first terminal to the second terminal. A second switch interrupts an electrical connection between the third terminal and the second terminal. A lever operably coupled to the first switch and the second switch, the lever can be actuated by the first switch to flip the second switch between the open state and the closed state. | 2022-09-08 |
20220285118 | IMPROVED STRUCTURE OF GROUND FAULT CIRCUIT INTERRUPTER - A structure of a ground fault circuit interrupter includes a locking arm, which is provided with a stop surface, disposed inside the ground fault circuit interrupter, and a support body fixedly connected to a soft magnet is provided with a stop portion which can interfere with the stop surface that is moving downward. The locking arm is also connected to an elastic element, and under a normal state, the elastic element moves downward the stop surface of the locking arm to interfere with the stop portion of the support body, so that the soft magnet is prevented from moving toward a permanent magnet The locking arm can also be pushed down and driven by a reset button to move upward the stop surface, so that the stop portion and the stop surface no longer interfere with each other. | 2022-09-08 |
20220285119 | OVERLOAD PROTECTION SWITCH WITH REVERSE RESTART SWITCHING STRUCTURE - An overload protection switch with reverse restart switching structure, particularly to one that has a molded-case circuit breaker which adding a lampshade parallel stagnation position for overload indication, and when resetting, needs to press back to the RESET for reconfirmation; due to the stagnation position and reverse restart structure, it can avoid repeating the reset action, preventing the reduction of the life of the overload protection switch and repeated exposure or the misjudgment and then resetting of electrical products that have been overloaded and tripped and then overload again then results in causing dangerous; also, the lampshade can be completely tripped even when the lampshade is suppressed, and prevent the danger of repeated tripping during overload. | 2022-09-08 |
20220285120 | X-RAY MACHINE - An x-ray apparatus includes a vacuum chamber that includes a window for exit of x-rays. Electrons are generated at a cathode within the vacuum chamber and accelerated toward a target anode associated with the window. An x-ray generating layer is included as a surface of the target anode to receive the electrons emitted by the cathode and to create x-rays. A blocking path blocks over 70% of the free electrons reaching said target anode from continuing on to exit through the window, while allowing x-rays leaving the x-ray generating layer to continue along the selectively blocking path to exit through the window. The x-ray apparatus is capable of operating at low voltage and relatively high power to reduce the necessary shielding and the corresponding weight of the apparatus yet allow more ready absorption of x-rays by items being irradiated. | 2022-09-08 |
20220285121 | RADIATION TUBE AND RADIATION SOURCE - A radiation tube that is used in a radiation source for radiography includes: an electron emitting unit that includes a cathode unit having an emitter electrode which emits electrons and a gate electrode; an anode unit that has an anode surface facing the cathode unit and collides with the electrons to generate radiation; a constant voltage supply unit that supplies a constant driving voltage to the gate electrode; and a vacuum tube that accommodates the constant voltage supply unit, the electron emitting unit, and the anode unit. | 2022-09-08 |
20220285122 | REFILLABLE ION CHAMBER WITH AUTOMATED PURGING SYSTEM - An apparatus includes an ion chamber and a valve assembly. The ion chamber may include a housing enclosing a gas and one or more electrodes. The valve assembly is coupled to the ion chamber allowing control of replacement of the gas within the housing. | 2022-09-08 |
20220285123 | ION GUN AND ION MILLING MACHINE - Provided is an ion gun that is capable of obtaining a higher plasma efficiency. This ion gun comprises: a first cathode | 2022-09-08 |
20220285124 | ABERRATION CORRECTION IN CHARGED PARTICLE SYSTEM - A lens element of a charged particle system comprises an electrode having a central opening. The lens element is configured for functionally cooperating with an aperture array that is located directly adjacent said electrode, wherein the aperture array is configured for blocking | 2022-09-08 |
20220285125 | Sample Milling Apparatus and Method of Adjustment Therefor - A sample milling apparatus includes an ion source, a swinging mechanism for swinging a sample, a positioning camera for bringing a target milling position on the sample into coincidence with the impact point of an ion beam, and a display section for displaying an image captured by the positioning camera. The adjustment method starts with observing the trace of the impinging ion beam left on the sample with the positioning camera while the position of the positioning camera is held relative to the swing axis of the swinging mechanism and capturing an observation image. Then, a display image to be displayed on the display section is extracted from the observation image based on the position of the trace, thus bringing the beam impact point and the position of the field of view of the display image into coincidence. | 2022-09-08 |
20220285126 | ION IMPLANTER AND ION IMPLANTATION METHOD - Provided is an ion implanter including an ion source that generates ions, an extraction unit that generates an ion beam by extracting the ions from the ion source and accelerating the ions, a linear acceleration unit that accelerates the ion beam extracted and accelerated by the extraction unit, an electrostatic acceleration/deceleration unit that accelerates or decelerates the ion beam emitted from the linear acceleration unit, and an implantation processing chamber in which implantation process is performed by irradiating a workpiece with the ion beam emitted from the electrostatic acceleration/deceleration unit. | 2022-09-08 |
20220285127 | ION IMPLANTER AND ELECTROSTATIC QUADRUPOLE LENS DEVICE - An ion implanter includes a high energy multistage linear acceleration unit for accelerating an ion beam. The high energy multistage linear acceleration unit includes high frequency accelerators in a plurality of stages provided along a beamline through which the ion beam travels, and electrostatic quadrupole lens devices in a plurality of stages provided along the beamline. The electrostatic quadrupole lens device in each of the stages includes a plurality of lens electrodes facing each other in a radial direction perpendicular to an axial direction, and disposed at an interval in a circumferential direction, an upstream side cover electrode covering a beamline upstream side of the plurality of lens electrodes and including a beam incident port, and a downstream side cover electrode covering a beamline downstream side of the plurality of lens electrodes and including a beam exiting port. | 2022-09-08 |
20220285128 | SUBSTRATE PROCESSING APPARATUS, CEILING PLATE, AND RING MEMBER - A substrate processing apparatus according to an embodiment includes a support table, a power source, and a ceiling plate. The support table is provided inside a chamber to support a substrate to be processed. The power source supplies high frequency power toward the support table. The ceiling plate is provided inside the chamber to face the support table. The ceiling plate includes a first member whose inside is provided with an opening and a second member being fitted into the opening. A first crystal plane of a first material exposed on a first surface of the first member facing the support table is different from a second crystal plane of the first material exposed on a second surface of the second member facing the support table. | 2022-09-08 |
20220285129 | Pulsed DC Power For Deposition Of Film - A vapor deposition system and methods of operation thereof are disclosed. The vapor deposition system includes a vacuum chamber; a dielectric target within the vacuum chamber, the dielectric target having a front surface and a thickness; a substrate support within the vacuum chamber, the substrate support having a front surface spaced from the front surface of the dielectric target to form a process gap; and a signal generator connected to the dielectric target to generate a plasma in the vacuum chamber, the signal generator comprises a power source, the power source configured to prevent charge accumulation in the dielectric target. The method includes applying power to a dielectric target within a vacuum chamber to generate a plasma in a process gap between the dielectric target and a substrate support and pulsing the power applied to the dielectric target to prevent charge accumulation. | 2022-09-08 |
20220285130 | MULTI-STATE RF PULSING TO CONTROL MASK SHAPE AND BREAKING SELECTIVITY VERSUS PROCESS MARGIN TRADE-OFF - A method for performing an etch process on a substrate in a plasma processing system, including: applying source RF power and bias RF power to an electrode; wherein the source RF power and the bias RF power are pulsed signals that together define a plurality of multi-state pulsed RF cycles, each cycle having a first state, second state, and third state; wherein the first state is defined by the source RF power having a first source RF power level and the bias RF power having a first bias RF power level; wherein the second state is defined by the source RF power and the bias RF power having substantially zero power levels; wherein the third state is defined by the source RF power having a second source RF power level less than the first source RF power level, and the bias RF power having a substantially zero power level. | 2022-09-08 |
20220285131 | SPATIAL MONITORING AND CONTROL OF PLASMA PROCESSING ENVIRONMENTS - Systems and methods for plasma processing are disclosed. An exemplary system may include a plasma processing chamber including a source to produce a plasma in the processing chamber and at least two bias electrodes arranged within the plasma processing chamber to control plasma sheaths proximate to the bias electrodes. A chuck is disposed to support a substrate, and a source generator is coupled to the plasma electrode. At least one bias supply is coupled to the at least two bias electrodes, and a controller is included to control the at least one bias supply to control the plasma sheaths proximate to the bias electrodes. | 2022-09-08 |
20220285132 | SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus comprises a chamber member that defines an interior volume that has an aspect ratio. The chamber member comprises a pair of laterally opposing inlet walls and a loading port. Each of the pair of laterally opposing inlet walls has an inlet port configured to receive output from a remote plasma source. The loading port is arranged between the pair of inlet walls, configured to allow passage of a substrate into the interior volume. | 2022-09-08 |
20220285133 | METHODS AND APPARATUS FOR PROCESSING A SUBSTRATE - Methods and apparatus for processing a substrate are provided herein. For example, an apparatus for processing a substrate comprises a top delivery gas nozzle configured to direct process gas toward a substrate support surface of a substrate support and a side delivery gas nozzle configured to direct the process gas toward a side surface of the substrate support, a first gas line connected to the top delivery gas nozzle, a second gas line connected to the side delivery gas nozzle, and a plurality of valves connected to the first gas line and the second gas line for providing process gas to the processing volume of the processing chamber, and a first orifice flow restrictor or a first needle valve connected to the first gas line or a second orifice flow restrictor or a second needle valve connected to the second gas line. | 2022-09-08 |
20220285134 | NEAR NETSHAPE ADDITIVE MANUFACTURING USING LOW TEMPERATURE PLASMA JETS - A system comprises an apparatus having a nozzle. An element is arranged around the apparatus. A feeder is configured to supply a powder of a material into the apparatus. A gas source is configured to supply a precursor gas into the apparatus and to supply an inert gas to circulate through a space between the element and the apparatus and to exit around the nozzle. A plasma generator is arranged in the apparatus and is configured to ionize the precursor gas and atomize the powder and to eject through the nozzle a jet of particles composed of the atomized powder and the ionized precursor gas onto a substrate arranged adjacent to the nozzle. | 2022-09-08 |
20220285135 | SUBSTRATE PROCESSING APPARATUS - Disclosed herein is a substrate processing apparatus capable of adjusting positions of first and second electrodes in advance in consideration of the difference in thermal expansion in order to prevent a short-circuit from occurring due to the contact between the first and second electrodes even if the first and second electrodes are thermally expanded during the process. The substrate processing apparatus is advantageous in that it can prevent the short-circuit between the first and second electrodes even if the first and second electrodes are thermally expanded due to the increase in temperature during the process and can maintain the uniformity of a thin film in the large-area substrate processing apparatus. | 2022-09-08 |
20220285136 | EDGE RING SYSTEMS FOR SUBSTRATE PROCESSING SYSTEMS - An edge ring system for a substrate processing system includes a top edge ring including an annular body having an inner diameter and an outer diameter. The outer diameter of the top edge ring is smaller than a horizontal opening of a substrate port of the substrate processing system. A first edge ring is arranged below the top edge ring including an annular body having an inner diameter and an outer diameter. The outer diameter of the first edge ring is larger than the substrate port of the substrate processing system. The inner diameter of the first edge ring is smaller than the inner diameter of the top edge ring. | 2022-09-08 |
20220285137 | PLASMA PROCESSING APPARATUS - A plasma processing apparatus includes a substrate support having a substrate supporting portion on which a substrate is placed and a peripheral portion surrounding the substrate supporting portion, a conductive focus ring placed on the peripheral portion of the substrate support, a cover ring surrounding an outer periphery of the substrate support and formed of a dielectric material, a conductive ring placed on the cover ring, and a radio frequency power supply electrically coupled to the substrate support. A first surface on an outer peripheral portion of the focus ring and a second surface on an inner peripheral portion of the conductive ring are spaced apart from each other while facing each other. Further, the cover ring has a spacing portion that separates the focus ring from the conductive ring. | 2022-09-08 |
20220285138 | SUBSTRATE SUPPORT - A substrate support includes a base, a substrate support layer disposed on the base, the substrate support layer being formed of an insulating material, and an electrostatic internal electrode layer disposed in the substrate support layer, the electrostatic internal electrode layer including a body portion and a plurality of protruding portions, the body portion having a circular shape in a plan view, and the plurality of protruding portions radially protruding from the body portion. | 2022-09-08 |
20220285139 | APPARATUS FOR TREATING SUBSTRATE AND SUBSTRATE TREATING METHOD - The inventive concept provides a substrate treating apparatus. The substrate treating apparatus comprises a chamber having a treating space therein; a support unit placed within the treating space and supporting a substrate; and a plasma generating unit for generating a plasma from a process gas supplied to the treating space, and wherein the plasma generating unit comprising: a first electrode; and a second electrode facing the first electrode, the second electrode made of a material capable of transmitting electromagnetic waves. | 2022-09-08 |
20220285140 | Apparatus For Fiber Optic Temperature Probe In Processing Chambers - Apparatus and systems for temperature probe integration on pedestal heaters of a processing chamber including a cooling assembly for cooling temperature probes disposed within. Cooling assemblies can be actively water-cooled, passively cooled by fin stacks. Further cooling assemblies include a mechanical arm assembly for lowering or raising the temperature probes. | 2022-09-08 |
20220285141 | SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING METHOD, GAS REGENERATION SYSTEM, AND GAS REGENERATION METHOD - According to one embodiment, there is provided a gas regeneration method. The method includes setting a predetermined standard on a basis of a flow rate of rare gas set in a processing recipe. The method includes selecting a rare gas recovery step on a basis of the predetermined standard. The method includes, in the rare gas recovery step, guiding emission gas from a predetermined chamber to a rare gas regenerator. The method includes, in a step other than the rare gas recovery step, causing the emission gas to bypass the rare gas regenerator to discharge the emission gas. | 2022-09-08 |
20220285142 | DESORPTION ION SOURCE WITH POST-DESORPTION IONIZATION IN TRANSMISSION GEOMETRY - An apparatus to generate ions from sample material deposited on a substrate which is at least partially transparent to electromagnetic waves, comprises: —a support device having a holder for the substrate, —a desorption/ionization unit including a desorption device and an ionization device, said desorption device being configured to desorb deposited sample material from a desorption site on the substrate using at least one energy burst, and said ionization device being configured to irradiate the desorbed sample material above the substrate with electromagnetic waves after the at least one energy burst, wherein the electromagnetic waves pass through the substrate before encountering the desorbed sample material at a location which corresponds to the desorption site, and —an extraction device which is arranged and designed to extract ions from the desorbed sample material and transfer them into an analyzer. The invention also relates to a correspondingly arranged method. | 2022-09-08 |
20220285143 | MULTI-TURN TIME-OF-FLIGHT MASS SPECTROMETER - An MT-TOFMS which is one mode of the present invention includes: a linear ion trap ( | 2022-09-08 |
20220285144 | EXTERNAL ELECTRODE FLUORESCENT LAMP AND HOME APPLIANCE INCLUDING THE SAME - A rare gas lamp device is disclosed. The rare gas lamp device includes: a lamp body provided in a shape of a cylinder to contain a rare gas and a fluorescent material for emitting light; a plurality of cap electrodes fixed to both ends of the lamp body; a plurality of band electrodes extending in a length direction from the plurality of cap electrodes and arranged opposite to each other with respect to a center axis of the lamp body, and positioned on a circumferential surface of the lamp body, wherein a light-emitting area of the lamp body is an exposed surface of the circumferential surface of the lamp body between the plurality of band electrodes; a spring holder coupled with each of the plurality of cap electrodes and configured to apply a voltage to the band electrodes through the plurality of cap electrodes, the spring holder including a first fixing part configured to support a first side of the cap electrode, a second fixing part configured to support a second side of the cap electrode, and an inserting opening formed between a first end of the first fixing part and a first end of the second fixing part such that the cap electrode is inserted in the inserting opening; and a stopper protruding from each of the plurality of cap electrodes, wherein, when each of the plural of cap electrodes is inserted through the inserting opening, the stopper is interfered by the first end of the first fixing part or the first end of the second fixing part to restrict the light-emitting area from rotating about the center axis of the lamp body. | 2022-09-08 |
20220285145 | DEVICE FOR EMITTING ULTRAVIOLET LIGHT - A device for emitting ultraviolet light includes at least one excimer lamp and a housing for the excimer lamp(s). Each excimer lamp has a discharge vessel filled with light-emitting gases, and a pair of first and second electrodes that are placed in contact with the discharge vessel and produce a dielectric barrier discharge inside the discharge vessel. The housing is made of an insulating and heat-resistant resin material. The housing is configured to house the excimer lamp(s), and has a light-emitting window that allows light with a center wavelength in a range from 200 nm to 230 nm emitted from the excimer lamp(s) to exit from the housing. | 2022-09-08 |
20220285146 | METHODS AND SYSTEMS FOR FORMING A LAYER COMPRISING VANADIUM AND NITROGEN - Disclosed are methods and systems for depositing layers comprising a metal and nitrogen. The layers are formed onto a surface of a substrate. The deposition process may be a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors. | 2022-09-08 |
20220285147 | METHODS AND SYSTEMS FOR FORMING A LAYER COMPRISING ALUMINUM, TITANIUM, AND CARBON - Disclosed are methods and systems for depositing layers comprising a titanium, aluminum, and carbon. The layers are formed onto a surface of a substrate. The deposition process comprises a cyclical deposition process. Exemplary structures in which the layers may be incorporated include field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors. | 2022-09-08 |
20220285148 | SEMICONDUCTOR ARRANGEMENT FORMATION - A method for forming a semiconductor arrangement is provided. The method includes forming a patterned photoresist over a top surface of a substrate. The method includes doping a first portion of the substrate using the patterned photoresist. The method includes removing the patterned photoresist using a gas comprising fluoride, wherein fluoride residue from the gas remains on the top surface of the substrate after removing the patterned photoresist. The method includes treating the substrate with nitrous oxide to remove the fluoride residue. | 2022-09-08 |
20220285149 | POWER SEMICONDUCTOR DEVICE HAVING A STRUCTURED METALLIZATION LAYER - Described herein are a method and a power semiconductor device produced by the method. The power semiconductor device includes: transistor device structures formed in a semiconductor substrate; a structured metallization layer above the semiconductor substrate; a first passivation over the structured metallization layer; a second passivation on the first passivation; an opening in the first passivation and the second passivation such that a first part of the structured metallization layer has a contact region uncovered by the first passivation and the second passivation and a peripheral region laterally surrounding the contact region and covered by the first passivation and the second passivation; a plating that covers the contact region but not the peripheral region of the first part of the structured metallization layer; and a protective layer separating the peripheral region of the first part of the structured metallization layer from the first passivation. | 2022-09-08 |
20220285150 | METHOD FOR FORMING CONTACT SURFACE ON TOP OF MESA STRUCTURE FORMED ON SEMICONDUCTOR SUBSTRATE - A method for forming a contact surface on a top of a mesa structure formed on a semiconductor substrate deposited with an insulating layer. The method includes depositing a first resist layer over the insulating layer, depositing a second resist layer over the first resist layer, defining a first portion of the second resist layer, wherein the first portion overlaps the top of the mesa structure, forming a first opening in the first portion by treating the second resist layer to expose a second portion of the first resist layer beneath thereof, forming a second opening in the first resist layer, by treating the exposed second portion to expose a third portion of the insulating layer beneath thereof, and etching the exposed third portion to form the contact surface on the top of the mesa structure. | 2022-09-08 |
20220285151 | SINGLE CRYSTAL SEMICONDUCTOR STRUCTURE AND METHOD OF MANUFACTURING THE SAME - A single crystal semiconductor includes a strain compensation layer; an amorphous substrate disposed on the strain compensation layer; a lattice matching layer disposed on the amorphous substrate and including two or more single crystal layers; and a single crystal semiconductor layer disposed on the lattice matching layer, the lattice matching layer including a direction control film disposed on the amorphous substrate and including a single crystal structure, and a buffer layer including a material different from that of the direction control film, the buffer layer being disposed on the direction control film and including a single crystal structure. | 2022-09-08 |
20220285152 | RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE - A radio frequency (RF) semiconductor device may include a semiconductor-on-insulator substrate, and an RF ground plane layer on the semiconductor-on-insulator substrate including a conductive superlattice. The conductive superlattice may include stacked groups of layers, with each group of layers comprising stacked doped base semiconductor monolayers defining a doped base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent doped base semiconductor portions. The RF semiconductor device may further include a body above the RF ground plane layer, spaced apart source and drain regions adjacent the body and defining a channel region in the body, and a gate overlying the channel region. | 2022-09-08 |
20220285153 | METHODS FOR MAKING RADIO FREQUENCY (RF) SEMICONDUCTOR DEVICES INCLUDING A GROUND PLANE LAYER HAVING A SUPERLATTICE - A method for making a radio frequency (RF) semiconductor device may include forming an RF ground plane layer on a semiconductor-on-insulator substrate and including a conductive superlattice. The conductive superlattice may include stacked groups of layers, with each group of layers including stacked doped base semiconductor monolayers defining a doped base semiconductor portion, and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent doped base semiconductor portions. The method may further include forming a body above the RF ground plane layer, forming spaced apart source and drain regions adjacent the body and defining a channel region in the body, and forming a gate overlying the channel region. | 2022-09-08 |
20220285154 | METHOD FOR MANUFACTURING DIAMOND SUBSTRATE - The present invention relates to a method for manufacturing a diamond substrate, and more particularly, to a method of growing diamond after forming a structure of an air gap having a crystal correlation with a lower substrate by heat treatment of a photoresist pattern and an air gap forming film material on a substrate such as sapphire (Al | 2022-09-08 |
20220285155 | IMPLANTATION MASK FORMATION - Implantation mask formation techniques described herein include increasing an initial aspect ratio of a pattern in an implantation mask by non-lithography techniques, which may include forming a resist hardening layer on the implantation mask. The pattern may be formed by photolithography techniques to the initial aspect ratio that reduces or minimizes the likelihood of pattern collapse during formation of the pattern. Then, the resist hardening layer is formed on the implantation mask to increase the height of the pattern and reduce the width of the pattern, which increases the aspect ratio between the height of the openings or trenches and the width of the openings or trenches of the pattern. In this way, the pattern in the implantation mask may be formed to an ultra-high aspect ratio in a manner that reduces or minimizes the likelihood of pattern collapse during formation of the pattern. | 2022-09-08 |
20220285156 | APPARATUS AND METHOD FOR WAFER BONDING - An apparatus for wafer bonding includes a transfer module and a plasma module. The transfer module is configured to transfer a semiconductor wafer. The plasma module is configured to apply a first type of plasma to perform a reduction operation upon a surface of the semiconductor wafer at a temperature within a predetermined temperature range to convert metal oxides on the surface of the semiconductor wafer to metal, and apply a second type of plasma to perform a plasma operation upon the surface of the semiconductor wafer at a room temperature outside the predetermined temperature range to activate a surface of the semiconductor wafer. | 2022-09-08 |
20220285157 | INTEGRATED CIRCUITS HAVING SOURCE/DRAIN STRUCTURE AND METHOD OF MAKING - An integrated circuit includes a gate structure over a substrate. The integrated circuit includes a first silicon-containing material structure in a recess. The first silicon-containing material structure includes a first layer below a top surface of the substrate and in direct contact with the substrate. The first silicon-containing material structure includes a second layer over the first layer, wherein an entirety of the second layer is above the top surface of the substrate, a first region of the second layer closer to the gate structure is thinner than a second region of the second layer farther from the gate structure. The first silicon-containing material structure includes a third layer between the first layer and the second layer, wherein at least a portion of the third layer is below the top surface of the substrate. | 2022-09-08 |
20220285158 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - The present invention provides a method for fabricating a semiconductor device capable of improving the contact resistance. According to an embodiment of the present invention, the method for fabricating the semiconductor device comprises: forming a doped region by doping and activation annealing a first dopant on a substrate; forming an interlayer insulating layer on the substrate; forming a contact hole exposing the doped region by etching the interlayer insulating layer; exposing the doped region to a pre-annealing; forming an additional doped region by doping a second dopant on a pre-annealed doped region; exposing the additional doped region to a post-annealing; and forming metal silicide on the additional doped region. | 2022-09-08 |
20220285159 | Gate Structures in Transistors and Method of Forming Same - In some embodiments, a method includes forming a plurality of nanostructures over a substrate; etching the plurality of nanostructures to form first recesses; forming source/drain regions in the first recesses; removing first nanostructures of the plurality of nanostructures leaving second nanostructures of the plurality of nanostructures; depositing a gate dielectric over and around the second nanostructures; performing an aluminum treatment on the gate dielectric; depositing a first conductive material over and around the gate dielectric; performing a fluorine treatment on the first conductive material; and depositing a second conductive material over and around the first conductive material. | 2022-09-08 |
20220285160 | METHOD FOR FORMING SEMICONDUCTOR DEVICE STRUCTURE WITH GATE - A method for forming a semiconductor device structure is provided. The method includes providing a substrate and an insulating layer over the substrate. The method includes depositing a gate dielectric layer over the insulating layer and in the wide trench and the narrow trench using an atomic layer deposition process. The method includes forming a gate electrode layer over the gate dielectric layer. The method includes removing the gate dielectric layer and the gate electrode layer outside of the wide trench and the narrow trench. | 2022-09-08 |
20220285161 | Methods for Doping High-K Metal Gates for Tuning Threshold Voltages - A method includes forming a first gate dielectric and a second gate dielectric over a first semiconductor region and a second semiconductor region, respectively, depositing a lanthanum-containing layer including a first portion and a second portion overlapping the first gate dielectric and the second gate dielectric, respectively, and depositing a hard mask including a first portion and a second portion overlapping the first portion and the second portion of the lanthanum-containing layer, respectively. The hard mask is free from both of titanium and tantalum. The method further includes forming a patterned etching mask to cover the first portion of the hard mask, with the second portion of the hard mask being exposed, removing the second portion of the hard mask and the second portion of the lanthanum-containing layer, and performing an anneal to drive lanthanum in the first portion of the lanthanum-containing layer into the first gate dielectric. | 2022-09-08 |
20220285162 | METHOD OF MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE - A method of manufacturing a semiconductor structure and a semiconductor structure are disclosed. The method of manufacturing a semiconductor structure includes: providing a substrate, and forming a first sacrificial layer on the substrate, where the first sacrificial layer includes a first sacrificial dielectric layer and a second sacrificial dielectric layer; patterning the first sacrificial layer, and forming first intermediate pattern structures that are arranged at intervals, where a first gap is provided between two adjacent first intermediate pattern structures; forming a first spacer pad layer in the first gap, where the first spacer pad layer covers sidewalls of each of the two adjacent first intermediate pattern structures and a bottom of the first gap; removing the first spacer pad layer at the bottom of the first gap, and the second sacrificial dielectric layer; and removing the first sacrificial dielectric layer, to form first pattern structures. | 2022-09-08 |
20220285163 | ATOMIC LAYER ETCHING OF METAL OXIDES - In one example, a method of processing a substrate includes loading the substrate in a process chamber, where the substrate includes a metal oxide containing film to be etched. The method further includes performing of an atomic layer etching including a plurality of cyclic processes, each of the plurality of cyclic processes including exposing the metal oxide containing film to a first gas stream including boron trichloride (BCl | 2022-09-08 |
20220285164 | Plasma Etching Apparatus Component for Manufacturing Semiconductor Comprising Composite Sintered Body and Manufacturing Method Therefor - Provided is a plasma etching apparatus component for manufacturing a semiconductor characterized by including a composite sintered body which contains 30 vol % to 70 vol % of yttria (Y | 2022-09-08 |
20220285165 | Ultra Narrow Trench Patterning with Dry Plasma Etching - A method includes forming a polymer layer on a patterned photo resist. The polymer layer extends into an opening in the patterned photo resist. The polymer layer is etched to expose the patterned photo resist. The polymer layer and a top Bottom Anti-Reflective Coating (BARC) are etched to pattern the top BARC, in which the patterned photo resist is used as an etching mask. The top BARC is used as an etching mask to etching an underlying layer. | 2022-09-08 |
20220285166 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes preparing a phosphoric acid processing liquid, etching a substrate and increasing a concentration of the precipitation inhibitor. The phosphoric acid processing liquid is prepared by supplying a precipitation inhibitor into a phosphoric acid aqueous solution. The substrate having a silicon oxide film and a silicon nitride film is etched by immersing the substrate in a processing tub. The concentration of the precipitation inhibitor is increased by additionally supplying the precipitation inhibitor into the phosphoric acid processing liquid when a number of substrates etched has reached a first threshold value or when a silicon concentration in the phosphoric acid processing liquid has reached a second threshold value. The etching of the substrate comprises etching a new substrate by immersing the new substrate in the processing tub in which the phosphoric acid processing liquid with the increased concentration of the precipitation inhibitor is stored. | 2022-09-08 |
20220285167 | SELECTIVE BARRIER METAL ETCHING - A method for selective barrier metal etching includes performing a hydrogen implantation process, in an inductively coupled plasma (ICP) etch chamber, to chemically reduce an oxidized portion of a barrier metal layer formed within a feature in a metal layer on the barrier metal layer, and performing an etch process, in the ICP etch chamber, to remove the hydrogen implanted portion of the barrier metal layer. | 2022-09-08 |
20220285168 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICES - In a method of forming a groove pattern extending in a first axis in an underlying layer over a semiconductor substrate, a first opening is formed in the underlying layer, and the first opening is extended in the first axis by directional etching to form the groove pattern. | 2022-09-08 |
20220285169 | SUBSTRATE PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - A technique improves selectivity in etching of a silicon-containing film over etching of a mask in plasma etching. A substrate processing method includes placing a substrate in a chamber in a plasma processing apparatus. The substrate includes a silicon-containing film and a mask on the silicon-containing film. The substrate processing method further includes generating plasma from a first process gas containing a hydrogen fluoride gas in the chamber. The generating plasma includes etching the silicon-containing film with a chemical species contained in the plasma. A flow rate of the hydrogen fluoride gas is at least 25 vol % of a total flow rate of the non-inert components of the first process gas. | 2022-09-08 |
20220285170 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING STACKED WIRING STRUCTURE, AND ION BEAM IRRADIATION APPARATUS - A method of manufacturing a semiconductor device includes: preparing a stacked body in which a first layer, a second layer, a third layer, and a fourth layer are stacked in this order on a semiconductor substrate in a first direction, the stacked body including a first region and a second region different from the first region; etching the fourth layer in the first region and the second region to expose the third layer by irradiating the first region and the second region with an ion beam, and etching the third layer and the second layer in the second region to expose the first layer by irradiating the second regions with an ion beam in a state where the third layer is exposed in the first region. | 2022-09-08 |
20220285171 | Integrated Circuit Package Pad and Methods of Forming - A semiconductor device and method for forming the semiconductor device is provided. The semiconductor device includes an integrated circuit having through vias adjacent to the integrated circuit die, wherein a molding compound is interposed between the integrated circuit die and the through vias. The through vias have a projection extending through a patterned layer, and the through vias may be offset from a surface of the patterned layer. The recess may be formed by selectively removing a seed layer used to form the through vias. | 2022-09-08 |
20220285172 | COMPOSITION FOR REMOVING PHOTORESIST - The present invention provides: an aqueous composition capable of removing a photoresist from a printed wiring board or a semiconductor wafer while preventing corrosion of tin plating and tin alloy plating in addition to a copper wiring; and a method for removing a photoresist using the aqueous composition. The aqueous composition according to the present invention is characterized by comprising an alkanolamine (A), a quaternary ammonium hydroxide (B), a sugar alcohol (C), a polar organic solvent (D), and water (E), wherein, with respect to the total amount of the composition, the content of the alkanolamine (A) is 2.5-50 mass %, the content of the quaternary ammonium hydroxide (B) is 0.5-4 mass %, and the content of the sugar alcohol (C) is 0.5-20 mass %. | 2022-09-08 |
20220285173 | ELECTRONICS MODULE AND METHOD FOR PRODUCING IT - Electronic module ( | 2022-09-08 |
20220285174 | SUBSTRATE PROCESSING APPARATUS INCLUDING FILLING GAS SUPPLY LINE AND SUBSTRATE PROCESSING METHOD USING THE SAME - A substrate processing method includes: disposing a wafer in a wafer region of a tube; injecting an inert gas into a gap region, of the tube, between an inner side wall of the tube and the wafer disposed in the wafer region; and injecting a process gas into the wafer region of the tube, wherein a pressure of the gap region of the tube is higher than a pressure at an edge of the wafer region of the tube during the injection of the inert gas and the process gas. | 2022-09-08 |
20220285175 | DRYING SYSTEM WITH INTEGRATED SUBSTRATE ALIGNMENT STAGE - A substrate cleaning and drying system includes a cleaning station, a drying station positioned adjacent the cleaning station, a cleaner robot to transfer a substrate from the cleaning station to the drying station, an aligner stage adjacent to the drying station, a robot arm rotatable between a substantially vertical first position for receiving the substrate from the drying station and a substantially horizontal second position for releasing the substrate onto the aligner stage, and a factory interface robot to transfer a substrate from the aligner stage into a factory interface module while in a horizontal orientation. The aligner stage includes a rotatable support to hold the substrate in a substantially horizontal orientation and to rotate the substrate to a desired orientation. | 2022-09-08 |
20220285176 | SEMICONDUCTOR MANUFACTURING APPARATUS AND SEMICONDUCTOR MANUFACTURING METHOD - A semiconductor manufacturing apparatus according to an embodiment includes a first chamber, a second chamber, and a fluid pressure applier. The first chamber includes a first film and a first container. The first film is deformable. The first container contains an incompressible fluid that causes the first film to be deformed. The second chamber includes a second film and a second container. The second film faces the first film. The second film is deformable. The second container contains the incompressible fluid that causes the second film to be deformed. The fluid pressure applier is configured to apply a pressure to the incompressible fluid of each of the first chamber and the second chamber to cause the first film and the second film to be deformed in bonding a plurality of substrates to each other between the first film and the second film. | 2022-09-08 |
20220285177 | EXHAUST SYSTEM AND PROCESS EQUIPMENT - An exhaust structure includes a piping section, wherein the piping section has a first inner diameter in a central region of the piping section, the piping section has a second diameter in at least one of an inlet or an outlet, and the second diameter has a same value as the first inner diameter. The exhaust structure further includes a plurality of smoothing layers configured to resist turbulence and condensation produced by a flow of one or more gasses in the piping section. | 2022-09-08 |
20220285178 | Method and Device for Producing a Housing - A device for forming a housing for a power semiconductor module arrangement includes a mold. The mold includes a first cavity including a plurality of first openings and a second opening, the second opening being coupled to a runner system, wherein the runner system is configured to inject a mold material into the first cavity through the second opening. The device further includes a plurality of sleeves or hollow bushings, wherein a first end of each of the plurality of sleeves or hollow bushings is arranged in one of the first openings, and wherein a second end of each of the plurality of sleeves or hollow bushings extends to the outside of the mold, a heating element configured to heat the mold, and a cooling element configured to cool the plurality of sleeves or hollow bushings. | 2022-09-08 |
20220285179 | VACUUM PROCESSING APPARATUS AND VACUUM PROCESSING METHOD USING THE SAME - A vacuum processing apparatus including: a plurality of transport chambers arranged in order along a first direction; a plurality of process chambers connected to the transport chambers along a second direction that is perpendicular to the first direction; and a position conversion chamber connected to a first transport chamber among the transport chambers. The transport chambers include a rotational movement stage that rotates about a rotation axis that is perpendicular to the first direction and the second direction, and moves along a plane formed by the first direction and the second direction. | 2022-09-08 |
20220285180 | ENCLOSURE SYSTEM STRUCTURE - An enclosure system includes walls including sidewalls and a bottom wall. The enclosure system further includes an enclosure lid configured to removably attach to one or more of the sidewalls. The walls and the enclosure lid at least partially enclose an interior volume of the enclosure system. The enclosure system further includes an upper window disposed in the enclosure lid. The upper window is configured for orientation verification of objects disposed in the interior volume. The enclosure system further includes a radio-frequency identification (RFID) holder coupled to a rear wall. The RFID holder is configured to secure an RFID component. The enclosure system further includes shelves disposed in the interior volume. Each of the shelves is configured to support a corresponding object of the objects. | 2022-09-08 |
20220285181 | SEMICONDUCTOR MANUFACTURING APPARATUS, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - In one embodiment, a semiconductor manufacturing apparatus includes a reformer configured to partially reform a first substrate to form a reformed layer between a first portion and a second portion in the first substrate. The apparatus further includes a joiner configured to form a joining layer between the first portion and a second substrate to join the first portion and the second substrate. The apparatus further includes a remover configured to remove the second portion from a surface of the second substrate while making the first portion remain on the surface of the second substrate by separating the first portion and the second portion. | 2022-09-08 |
20220285182 | SUBSTRATE PROCESSING APPARATUS AND ABNORMALITY DETECTION METHOD - A substrate processing apparatus includes: a stage having an electrostatic chuck configured to attract a substrate; a measurement part configured to measure a temperature of the stage; and a detection part configured to detect an abnormality caused by attraction of the substrate by the electrostatic chuck, based on a fluctuation of the temperature of the stage. | 2022-09-08 |
20220285183 | SEMICONDUCTOR INTELLIGENT DETECTION SYSTEM, INTELLIGENT DETECTION METHOD AND STORAGE MEDIUM - The present disclosure provides a semiconductor intelligent detection system, an intelligent detection method and a storage medium. The semiconductor intelligent detection system includes: a data import module, configured to acquire a data table to-be-detected; a data storage module, having a process resource database stored therein, a data type of data stored in the process resource database being used to perform data detection on items to-be-detected of a corresponding type; a resource detection module, connected to the data import module and the data storage module; wherein the resource detection module is configured to perform data detection on the items to-be-detected in the data table to-be-detected one by one, and record wrong items to-be-detected in an abnormity information table; and, an abnormity export module, connected to the resource detection module and configured to detect whether the resource detection module has detected the last item to-be-detected in the data table to-be-detected. | 2022-09-08 |
20220285184 | UNCONSUMED PRECURSOR MONITORING - A monitoring device for monitoring a fabrication process in a fabrication system. The monitored fabrication system includes a process chamber and a plurality of flow components. A quartz crystal microbalance (QCM) sensor monitors one flow component of the plurality of flow components of the fabrication system and is configured for exposure to a process chemistry in the one flow component during the fabrication process. A controller measures resonance frequency shifts of the QCM sensor due to interactions between the QCM sensor and the process chemistry in the one flow component during the fabrication process. The controller determines a parameter of the fabrication process in the process chamber as a function of the measured resonance frequency shifts of the QCM sensor within the one flow component. | 2022-09-08 |
20220285185 | WIRELESS IN-SITU REAL-TIME MEASUREMENT OF ELECTROSTATIC CHUCKING FORCE IN SEMICONDUCTOR WAFER PROCESSING - Embodiments disclosed herein include an apparatus for measuring chucking force and methods of using such apparatuses. In an embodiment, the apparatus for measuring a chucking force comprises a substrate having a chucking surface, where the chucking surface is the surface that is supported by a chuck. In an embodiment, the apparatus further comprises a plurality of sensors over the chucking surface, where the plurality of sensors are thin film sensors with a thickness that is less than a thickness of the substrate. In an embodiment, the apparatus further comprises a wireless communication module electrically coupled to each of the plurality of sensors. | 2022-09-08 |
20220285186 | METHOD FOR MAPPING WAFERS IN A WAFER CARRIER - The present disclosure relates to a method. The method includes generating a first beam of radiation toward a first slot of a workpiece carrier. The first beam of radiation has a first beam area that is greater than or equal to an area of an opening of the first slot. The method further includes measuring a reflected portion of the first beam of radiation that is reflected toward, and impinges on, a radiation sensor. The method further includes determining if the first slot of the workpiece carrier is holding a workpiece based on the measured reflected portion of the first beam of radiation. | 2022-09-08 |
20220285187 | TREATMENT METHOD AND TREATMENT DEVICE FOR OOC ACTION DURING SEMICONDUCTOR PRODUCTION PROCESS - A treatment method for an OOC action during a semiconductor production process includes: multiple Out Of Control Action Plan IDs (OCAPID) respectively corresponding to multiple semiconductor production process steps and multiple identified contents in one-to-one correspondence with the multiple OCAPIDs are established, and an OOC action checklist including multiple OOC action check items according to the identified contents is established; it is determined whether the OOC action occurs to a wafer subjected to the current semiconductor production process step, and if the OCC action occurs to the wafer, the current OCAPID corresponding to the current semiconductor production process step is automatically obtained, and the wafer is inspected according to the current identified content corresponding to the current OCAPID. | 2022-09-08 |
20220285188 | DISPLAY TRANSFER STRUCTURE INCLUDING LIGHT EMITTING ELEMENTS AND TRANSFERRING METHOD OF LIGHT EMITTING ELEMENTS - Provided is a display transfer structure including a substrate including a plurality of wells, and a plurality of light emitting elements disposed in the plurality of wells, wherein the plurality of light emitting elements have a rotationally asymmetric planar shape, and wherein the plurality of wells respectively have a planar shape different from a planar shape of each of the plurality of light emitting elements. | 2022-09-08 |
20220285189 | STEERING DEVICES FOR OHT - A steering device for an OHT according to some example embodiments of the present inventive concepts includes: an LM block; a steering plate fixedly installed to the LM block and provided with an insertion groove; a link installed in the insertion groove of the steering plate and tilted; a main bearing having an outer circumferential surface in contact with the link to reduce friction when the link is tilted; and a guide roller rotatably installed on a protrusion protruding from the link. | 2022-09-08 |
20220285190 | METHOD FOR TRANSPORTING WAFERS - A method includes moving a wafer transport device to a position above a load port; lowering a hoist unit of the wafer transport device above the load port, wherein the wafer transport device has a plurality of belts, each of the belts is connected to the hoist unit and wound around a respective belt winding drum; detecting sound waves from the belts by using at least one acoustic sensor to measure tensions of the belts; and comparing the tensions from the belts to determine an inclination of the hoist unit. | 2022-09-08 |
20220285191 | SUBSTRATE TRANSFER DEVICE AND SUBSTRATE PROCESSING SYSTEM - A substrate transfer device includes: a planar motor provided in a transfer chamber and including an array of coils; a transfer unit configured to move above the planar motor; and a controller configured to control supply of a current to the array of the coils, wherein the transfer unit includes: a first base including an array of first magnets and configured to move above the planar motor; a second base including an array of second magnets and configured to move above the planar motor, the second base being arranged coaxially with the first base; and at least one arm configured to be extended/contracted by rotating the second base relative to the first base. | 2022-09-08 |
20220285192 | INTERFACE TOOL - A closed gas circulation system may include a sealed plenum, circulation fans, and a fan filter unit (FFU) inlet to contain, filter, condition, and re-circulate a gas through a chamber of an interface tool. The gas provided to the chamber is maintained in a conditioned environment in the closed gas circulation system as opposed to introducing external air into the chamber through the FFU inlet. This enables precise control over the relative humidity and oxygen concentration of the gas used in the chamber, which reduces the oxidation of semiconductor wafers that are transferred through the chamber. The closed gas circulation system may also include an air-flow rectifier, a return vent, and one or more vacuum pumps to form a downflow of collimated gas in the chamber and to automatically control the feed-forward pressure and flow of gas through the chamber and the sealed plenum. | 2022-09-08 |
20220285193 | SHORTENED LOAD PORT FOR FACTORY INTERFACE - The disclosure describes devices, systems, and methods for integrating load locks into a factory interface footprint space. A factory interface for an electronic device manufacturing system can include a load port for receiving a substrate carrier. The load port can include a frame adapted for connecting the load port to a factory interface, the frame comprising a transport opening through which one or more substrates are capable of being transported between the substrate carrier and the factory interface. The load port can also include an actuator coupled to the frame, and a load port door coupled to the actuator and configured to seal the transport opening. The frame height can be greater than the height of the load port door, and less than 2.5 times the height of the load port door. | 2022-09-08 |
20220285194 | ASSEMBLY JIG SET AND MANUFACTURING METHOD OF SEMICONDUCTOR MODULE - Provided is an assembly jig set of semiconductor module having a plurality of semiconductor chips, the assembly jig set comprising: a first outer frame jig; and a plurality of inner piece jigs positioned by the first outer frame jig and each having a sectioned shape corresponding to the first outer frame jig, wherein one of the inner piece jigs has a plurality of opening portions for positioning the semiconductor chips. A manufacturing method of a semiconductor module using an assembly jig set is provided. | 2022-09-08 |
20220285195 | Load Lock Device Having Optical Measuring Device for Acquiring Distance - The present disclosure provides a substrate processing apparatus including at least one input/output chamber. The load lock device includes a base, a guide rail, a platform and an optical measuring module. The guide rail is connected to the base. The platform, carrying a cassette for holding a batch of spaced substrates, is movably disposed on the guide rail. The optical measuring module is configured to acquire an actual moving distance traveled by the platform along the guide rail based on at least one optical signal reflected from the platform. | 2022-09-08 |
20220285196 | BONDING APPARATUS, BONDING SYSTEM, AND BONDING METHOD - A bonding apparatus configured to bond a first substrate and a second substrate includes a first holder configured to hold the first substrate; a second holder disposed to face the first holder, and configured to hold the second substrate; two imaging units each including a first imaging device configured to image a first alignment mark formed on a bonding surface of the first substrate and a second imaging device configured to image a second alignment mark formed on a bonding surface of the second substrate; a first moving mechanism configured to move the two imaging units along a first direction in a planar region between the first holder and the second holder; a second moving mechanism configured to move the first imaging unit along a second direction orthogonal to the first direction; and a third moving mechanism configured to move the second imaging unit along the second direction. | 2022-09-08 |
20220285197 | SUBSTRATE PROCESSING APPARATUS AND ABNORMALITY DETECTION METHOD - A substrate processing apparatus includes: a stage including an electrostatic chuck configured to attract a substrate; a heater configured to heat the stage; a heating drive part configured to supply power to the heater so that a temperature of the stage becomes a target value; and a detector configured to detect an abnormality in attraction of the substrate by the electrostatic chuck, wherein the detector is further configured to detect the abnormality based on fluctuation of the power supplied to the heater, the fluctuation being generated by the attraction of the substrate by the electrostatic chuck. | 2022-09-08 |
20220285198 | METHOD FOR SELECTIVELY RELEASING A LIGHT-EMITTING DIODE CHIP AND METHOD OF MANUFACTURING LIGHT-EMITTING DEVICE - A method of releasing a selected light-emitting diode chip from a plurality of light-emitting diode chips each of which has a p-type electrode, an n-type electrode and a central portion between the p-type electrode and the n-type electrode, comprising steps of: providing a first substrate with the plurality of light-emitting diode chips bonded thereon and spaced from each other in a pitch; and applying a laser spot generated from a laser energy source to reduce a bonding force between the selected light-emitting diode chip and the first substrate, thereby making the selected light-emitting diode chip release from the first substrate; wherein the laser spot has a coverage over the p-type electrode and the n-type electrode of the selected light-emitting diode chip, and the coverage has a length less than the pitch. | 2022-09-08 |
20220285199 | PROTECTIVE FILM FOR BACK-GRINDING WAFER - A protective film for back-grinding wafers primarily includes a base layer and a multi-film structure. The multi-film structure at least includes two TPU films, wherein the one (HPTU film) having a higher Vicat softening temperatures and/or heat deflection temperature than the other (LPTU film) contacts the base layer. The protective film optionally includes an adhesive film on one side of the LTPU film. The multi-film structure may include one or more TPU films between the HPTU and the LPTU films. | 2022-09-08 |
20220285200 | TEMPORARY PROTECTIVE FILM, REEL BODY, PACKAGING BODY, PACKAGE BODY, TEMPORARY PROTECTIVE BODY, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - A temporary protective film including a support film and an adhesive layer provided on one surface or both surfaces of the support film. The support film is a polyimide film. The thickness of the adhesive layer is less than 8 μm. | 2022-09-08 |