36th week of 2014 patent applcation highlights part 12 |
Patent application number | Title | Published |
20140246616 | MEDICAL CONNECTORS WITH FLUID-RESISTANT MATING INTERFACES - A connector system for medical fluid includes a male connector and a female connector that have a closed configuration when detached from one another. The first end of the male connector is configured to mate with a first end of the female connector. When the male connector is coupled with the female connector, complementary structures engage to move seals away from ports in the male connector and the female connector, opening a fluid pathway through the connectors. The mating ends of the connectors are not exposed to the medical fluid when the connectors are coupled so that when the connectors are disconnected, the mating ends are substantially free of residual medical fluid. | 2014-09-04 |
20140246617 | VALVE DEVICE AND METHOD FOR TRANSFERRING A TRANSFER MEDIUM - The invention relates to a valve device and to a method for transferring a transfer medium, said valve device and method having an inflow, an outflow and two valve disks which are arranged one behind another in the direction of flow and are pivotable about a common rotational axis for opening and closing the lumen which surrounds them, wherein the inflow and the outflow are formed by two housing sections which are lockable together, the ends of which facing one another receive in each case a valve disk with a fixedly connected half-shaft, wherein, with the housing sections in the locked state, the two half-shafts form one common shaft which is pivotable about the rotational axis and the valve disks abut closely against one another, and wherein, with the housing sections in the non-locked state, the valve disks in each case close the lumen of the housing section receiving them. | 2014-09-04 |
20140246618 | MICROFLUIDIC PUMP AND VALVE STRUCTURES AND FABRICATION METHODS - Plastic microfluidic structures having a substantially rigid diaphragm that actuates between a relaxed state wherein the diaphragm sits against the surface of a substrate and an actuated state wherein the diaphragm is moved away from the substrate. As will be seen from the following description, the microfluidic structures formed with this diaphragm provide easy to manufacture and robust systems, as well readily made components such as valves and pumps. | 2014-09-04 |
20140246619 | DESIGN OF MULTI-ELECTRON LI-ION PHOSPHATE CATHODES BY MIXING TRANSITION METALS - In general, the invention relates to electrode materials, e.g., novel cathode materials with high density, low cost, and high safety. A voltage design strategy based on the mixing of different transition metals in crystal structures known to be able to accommodate lithium in insertion and delithiation is presented herein. By mixing a metal active on the +2/+3 couple (e.g., Fe) with an element active on the +3/+5 or +3/+6 couples (e.g., V or Mo), high capacity multi-electron cathodes are designed in an adequate voltage window. | 2014-09-04 |
20140246620 | MATERIAL FOR LITHIUM SECONDARY BATTERY OF HIGH PERFORMANCE - Provided is a lithium mixed transition metal oxide having a composition represented by Formula I of Li | 2014-09-04 |
20140246621 | POLYESTER POLYOL, POLYURETHANE OBTAINED USING THE SAME, PROCESS FOR PRODUCTION THEREOF, AND MOLDED POLYURETHANE - A process for producing a polyurethane, which comprises using a polyester polyol (a-1), a polyether polyol (b), an isocyanate compound (c) and a chain extender (d) as a raw material to produce a polyurethane, wherein the polyester polyol (a-1) is a polyester polyol (a-1) obtained by forming an ester bond between either a carboxyl group of a polycarboxylic acid (i-1) having a polysiloxane framework and a plurality of carboxyl groups or an ester group of a polycarboxylic acid ester (i-2) having a polysiloxane framework and a plurality of ester groups, and a hydroxyl group of a polyether polyol (ii). | 2014-09-04 |
20140246622 | HEAT REACTIVATED ADSORBENT GAS FRACTIONATOR AND PROCESS - A system for regenerating a desiccant bed having water adsorbed thereon to a desired moisture content comprising: a desiccant bed used to produce dry product gas having a first end and a second end; a source of feed gas, heated by a gas compression process fluidly connected to the desiccant bed wherein feed gas flows through the desiccant bed such that the heat present in the feed gas desorbs a portion of the moisture from the regenerating desiccant bed; and a source of cooling gas fluidly connected to the desiccant bed wherein the cooling gas flows through the desiccant bed in a closed loop such that moisture is desorbed from the bed as the desiccant bed cools and is carried back to the first end of the desiccant bed to provide additional cooling wherein moisture in the cooling gas is adsorbed. | 2014-09-04 |
20140246623 | NITRIDE PHOSPHOR AND METHOD FOR MANUFACTURING THE SAME - Problem to be solved is to provide a nitride phosphor having enhanced luminance, internal quantum efficiency and external quantum efficiency compared to those of conventional nitride phosphors. The nitride phosphor is represented by the general formula (1) shown below and it is characterized in that the infrared spectroscopy measured by the diffuse reflection method at the measurement intervals of 2 cm | 2014-09-04 |
20140246624 | MONOCHROMATIC DOT ENSEMBLES - This disclosure is directed to systems and methods for sorting a native aggregate, such as a fluorescent nanoparticle aggregate, which includes multiple objects, some of which have different characteristics, into lower level ensembles, such as monochromatic nanoparticle ensembles. In one aspect, the system includes two detectors, one of which accepts all emitted wavelengths and another one which is preceded by a filter to permit transmission of a specific wavelength or range of wavelengths. In another aspect, the system includes multiple detectors, each detector configured to detect a given wavelength or range of wavelengths, such that no two detectors have overlapping wavelengths or ranges. In yet another aspect, the system includes an optical regulator in front of a detector. This disclosure is also directed to systems and methods for multiplexing and analyzing a target analyte using the monochromatic nanoparticle ensembles. | 2014-09-04 |
20140246625 | Integrated Combustion Reactor And Methods Of Conducting Simultaneous Endothermic and Exothermic Reactions - Integrated Combustion Reactors (ICRs) and methods of making ICRs are described in which combustion chambers (or channels) are in direct thermal contact to reaction chambers for an endothermic reaction. Particular reactor designs are also described. Processes of conducting reactions in integrated combustion reactors are described and results presented. Some of these processes are characterized by unexpected and superior results, and/or results that can not be achieved with any prior art devices. | 2014-09-04 |
20140246626 | METHOD OF OPERATION OF PROCESS TO PRODUCE SYNGAS FROM CARBONACEOUS MATERIAL - A process is provided for producing syngas that is effective for use in downstream processes. The process for producing syngas includes operating a gasification apparatus in a start-up mode until the gasification apparatus and equipment downstream of the gasification apparatus are adequately warmed up to a first target temperature. Upon reaching a first target temperature, the process is then operated in a production mode to produce a second syngas with a higher CO/CO | 2014-09-04 |
20140246627 | ELECTROMAGNETIC WAVE ABSORPTION PLATE, AND COMPOSITION FORSAME AND METHOD FOR MANUFACTURING SAME - A plurality of kinds of carbonized powders obtained by carbonizing a plant material at different carbonization temperatures are dispersed in a resin to form a composition for an electromagnetic wave absorbing plate. When an electromagnetic wave absorbing plate is formed using the composition, the d/λ value in a non-reflective state of the electromagnetic wave absorbing plate can be adjusted to fall within the predetermined range rather than at a single point, by adjusting each weight ratio of the plural kinds of carbonized powders. | 2014-09-04 |
20140246628 | CONDUCTIVE POLYMER MATERIAL, USE OF SAME, AND A METHOD FOR THE PRODUCTION OF SAME - The invention relates to a conductive elastomer provided and formed from a base elastomer and conductive solid particles that are distributed therein. The conductive particles used are: a) platelet-shaped conductive particles and/or b) dendritic conductive particles and/or c) other elongated conductive particles with a length:width ratio of greater than or equal to two. It has been seen that a combination of ball-shaped and platelet-shaped conductive particles is particularly advantageous. The particles can additionally be aligned by the pouring, application using a doctor blade, or drawing of the dissolved or not-yet cured mixture. The polymer is particularly suitable for medical electrodes for capturing and emitting signals. The material rennulus elastic, and conductive when stretched or bent. | 2014-09-04 |
20140246629 | METAL PARTICLE DISPERSION WITH METAL NANOWIRES - The present invention provides metal nanowires containing at least metal nanowires having a diameter of 50 nm or less and a major axis length of 5 μm or more in an amount of 50% by mass or more in terms of metal amount with respect to total metal particles. | 2014-09-04 |
20140246630 | CONTINUOUS PROCESS AND CONTINUOUS REACTING APPARATUS FOR SYNTHESIZING SEMICONDUCTOR GASES - The present invention relates to a continuous process and a continuous reacting apparatus for synthesizing a semiconductor gas including germane (GeH | 2014-09-04 |
20140246631 | MERCAPTOFUNCTIONAL HIGH MUBETA EO CHROMOPHORES AND HIGH TG, LOW OPTICAL LOSS, COVALENTLY BONDED, HIGH MUBETA EO CHROMOPHORE CONTAINING POLYMERS AND METHODS OF SYNTHESIZING EO MATERIALS - The present invention relates generally to mercaptofunctional high μβ EO chromophores and EO polymers, and particularly to mercaptofunctional high μβ EO chromophores and EO polymers useful for making electro-optical devices and systems. Mercaptofunctional high μβ EO chromophores are covalently bonded to poly(imido sulfide) polymers producing high Tg, low optical loss, covalently bonded, high μβ EO chromophore containing polymers. Methods of synthesizing these EO materials using mild polymerization conditions are also described. | 2014-09-04 |
20140246632 | POLARIZING FILM, IMAGE DISPLAY DEVICE, AND METHOD FOR PRODUCING POLARIZING FILM - The present invention provides a polarizing film having a high dichroic ratio. The polarizing film contains a disazo compound represented by the following general formula (1). In the general formula (1), Q | 2014-09-04 |
20140246633 | PHOTOSENSITIVE RESIN COMPOSITION FOR COLOR FILTERS AND USES THEREOF - A photosensitive resin composition for color filter including an alkai-soluble resin (A-1), an alkai-soluble resin (A-2) having a functional group represented by formula (2), a compound (B) having an ethylenically unsaturated group, a photoinitiator (C), an organic solvent (D), and a pigment (E) is provided, wherein the alkai-soluble resin (A-1) is formed by copolymerizing an ethylenically unsaturated monomer (a-1) having a carboxylic acid group, a compound (a-2) having a cyclicimide group represented by formula (1), and other copolymerizable ethylenically unsaturated monomers (a-3) except for the ethylenically unsaturated monomer (a-1) having the carboxylic acid group and the compound (a-2) having the cyclicimide group represented by formula (1). | 2014-09-04 |
20140246634 | POWER-ASSISTED WINCH - A power-assisted winch includes a rotatable drum for receiving a line thereabout. The power-assisted winch further includes a trigger mechanism configured to be releasably engaged upon a force exerted on the line. The trigger mechanism selectively activates a power source providing power to the winch to assist with hauling the line when engaged. | 2014-09-04 |
20140246635 | CYLINDER-DRIVEN LIFTING MECHANISM OF COMPACTION MACHINE AND COMPACTION MACHINE - In one aspect of the disclosure, a cylinder-driven lifting mechanism of a compaction machine includes a cylinder having a first end and a second end, a fixed pulley set, a movable pulley set, a rope having a head end, and a tail end configured to connect a compaction hammer. The first end of the cylinder is connected to a vehicle body of the compaction machine and the second end of the cylinder is connected to the movable pulley set. The rope is wound on the fixed pulley set and the movable pulley set and is then connected to the compaction hammer. When the cylinder performs extension and refraction movement, the movable pulley set moves with the cylinder, the distance between the movable pulley set and the fixed pulley set increases or decreases, and the compaction hammer connected to the tail end of the rope is lifted up or dropped respectively. | 2014-09-04 |
20140246636 | VEHICLE LEVELING SYSTEM AND METHOD - A system and method are disclosed for leveling a vehicle when stationary. The system includes three zones with a first zone at the front end, and the second and third zones on opposite sides of the vehicle. All zones include leveling jacks, each having a blind side and a rod side. At least one leveling jack is located in the first zone, and at least two leveling jacks are located in each of the second and third zones. The blind sides of the jacks in each zone are connected together. The rod sides of all of the jacks are connected to a common fluid line, which typically is at low fluid pressure or pressure-free. The method involves extending all of the jacks from retracted positions to extended positions until they meet the surface upon which the vehicle is located. Fluid is then applied to the blind sides of either the second or third zone leveling jacks to raise the lower of the two sides. If the front end is lower than the rear end, fluid is applied to the blind side of the leveling jack in the first zone. If the front end is higher than the rear, fluid is relived form the blind side of the leveling jack. | 2014-09-04 |
20140246637 | DUAL WIND JACK - An improved jack assembly includes multiple handle attachment positions. The jack assembly includes an outer tube and an inner tube moveable with respect to the outer tube. The outer tube includes a first handle attachment position to engage inner gearing and a second handle attachment position to engage inner gearing. A handle may be removably connected to the first attachment position or second attachment position. The outer tube may be connected to a mounting fixture and adjustable with respect to the mounting fixture. | 2014-09-04 |
20140246638 | KIT FOR TEMPORARY WIRE BARRIERS - A kit for a temporary barrier includes at least two vertical post members, a contiguous wire and a tensioning device. The at least two vertical post members define respective top and bottom ends thereof and are positioned on an underlying surface in a spaced apart relationship. The wire runs between the two vertical post members at least towards their respective top ends and at least towards their respective bottom ends thereby providing a top wire portion and a bottom wire portion extending between the two vertical post members. The two vertical post members have respective arcuate bodies along their respective length for arcuately receiving the wire. The tensioning device is mounted to one of the two vertical post members near one of the top or bottom ends thereof and provides tension to the wire. A barrier is provided by the previous kit. A method for building a temporary kit includes mounting vertical posts on an underlying surface in a spaced apart relationship and running a wire between them. | 2014-09-04 |
20140246639 | BALUSTER STRUCTURE OF HANDRAIL - A baluster structure of handrail includes a steel-bar threaded central post, which is circumferentially enclosed by a plastic jacket and a plastic decorative portion. The steel-bar threaded central post has top and bottom respectively forming first and second joint sections. The second joint section is mounted to a stairway and the first joint section is mounted to an underside of the handrail to form a baluster. The threads of the upper and lower sections and the thread-free middle section of the steel-bar threaded central post are enclosed by the integrally formed plastic jacket and plastic decorative portion, whereby the plastic jacket and the plastic decorative portion are rotatably fixed. The baluster is mounted to the stairway to support a handrail. The baluster is of greater strength, does not deform and bend, is safe and corrosion resistant, has an extended life span, and is environmentally conservative. | 2014-09-04 |
20140246640 | Doped Electrodes Used To Inhibit Oxygen Loss in ReRAM Device - A nonvolatile memory device and method for forming a resistive switching memory element, with improved lifetime and switching performance. A nonvolatile memory element includes resistive switching layer formed between a first and second electrode. The resistive switching layer comprises a metal oxide. One or more electrodes include a dopant material to provide the electrode with enhanced oxygen-blocking properties that maintain and control the oxygen ion content within the memory element contributing to increased device lifetime and performance. | 2014-09-04 |
20140246641 | Resistive Switching Devices Having a Switching Layer And An Intermediate Electrode Layer and Methods of Formation Thereof - In one embodiment of the present invention, a resistive switching device includes a first electrode disposed over a substrate and coupled to a first potential node, a switching layer disposed over the first electrode, a conductive amorphous layer disposed over the switching layer, and a second electrode disposed on the conductive amorphous layer and coupled to a second potential node. | 2014-09-04 |
20140246642 | ENCAPSULATED PHASE CHANGE CELL STRUCTURES AND METHODS - Methods and devices associated with phase change cell structures are described herein. In one or more embodiments, a method of forming a phase change cell structure includes forming a substrate protrusion that includes a bottom electrode, forming a phase change material on the substrate protrusion, forming a conductive material on the phase change material, and removing a portion of the conductive material and a portion of the phase change material to form an encapsulated stack structure. | 2014-09-04 |
20140246643 | MEMORY DEVICE AND APPARATUS INCLUDING THE SAME - A memory device may include a first electrode and a second electrode spaced apart from the first electrode. The memory device may further include a memory element disposed between the first electrode and the second electrode and a switching element disposed between the first electrode and the second electrode. The switching element may be configured to control signal access to the memory element. The memory device may further include a barrier layer disposed between the memory element and the switching element, the barrier layer including an insulation material. | 2014-09-04 |
20140246644 | Front to Back Resistive Random Access Memory Cells - A resistive random access memory device formed on a semiconductor substrate comprises an interlayer dielectric having a via formed therethrough. A chemical-mechanical-polishing stop layer is formed over the interlayer dielectric. A barrier metal liner lines walls of the via. A conductive plug is formed in the via. A first barrier metal layer is formed over the chemical-mechanical-polishing stop layer and in electrical contact with the conductive plug. A dielectric layer is formed over the first barrier metal layer. An ion source layer is formed over the dielectric layer. A dielectric barrier layer is formed over the ion source layer, and includes a via formed therethrough communicating with the ion source layer. A second barrier metal layer is formed over the dielectric barrier layer and in electrical contact with the ion source layer. A metal interconnect layer is formed over the barrier metal layer. | 2014-09-04 |
20140246645 | Arrays Of Nonvolatile Memory Cells And Methods Of Forming Arrays Of Nonvolatile Memory Cells - An array of nonvolatile memory cells includes a plurality of vertically stacked tiers of nonvolatile memory cells. The tiers individually include a first plurality of horizontally oriented first electrode lines and a second plurality of horizontally oriented second electrode lines crossing relative to the first electrode lines. Individual of the memory cells include a crossing one of the first electrode lines and one of the second electrode lines and material there-between. Specifically, programmable material, a select device in series with the programmable material, and current conductive material in series between and with the programmable material and the select device are provided in series with such crossing ones of the first and second electrode lines. The material and devices may be oriented for predominant current flow in defined horizontal and vertical directions. Method and other implementations and aspects are disclosed. | 2014-09-04 |
20140246646 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF FABRICATING SAME - A memory cell array having such a structure that can be realized with a simpler process and ideal for realizing a higher density is provided. Memory cells have a structure in which channel layers ( | 2014-09-04 |
20140246647 | NANOSTRUCTURE LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A nanostructure semiconductor light emitting device includes a base layer, an insulating layer, and a plurality of light emitting nanostructures. The base layer includes a first conductivity type semiconductor. The insulating layer is disposed on the base layer and has a plurality of openings through which regions of the base layer are exposed. The light emitting nanostructures are respectively disposed on the exposed regions of the base layer and include a plurality of nanocores having a first conductivity type semiconductor and having side surfaces provided as the same crystal planes. The light emitting nanostructures include an active layer and a second conductivity type semiconductor layer sequentially disposed on surfaces of the nanocores. Upper surfaces of the nanocores are provided as portions of upper surfaces of the light emitting nanostructures, and the upper surfaces of the light emitting nanostructures are substantially planar with each other. | 2014-09-04 |
20140246648 | LIGHT EMITTING DEVICE PACKAGES AND METHODS OF FORMING THE SAME - A light emitting device package, comprises a light emitting structure having first and second electrodes insulated from each other; and a support structure. The support structure comprises: a first support electrode electrically connected to the first electrode of the light emitting structure; a second support electrode electrically connected to the second electrode of the light emitting structure, the second support electrode spaced apart from, and electrically insulated from, the first support electrode; and a support connection portion between the first support electrode and the second support electrode. The light emitting structure includes a protrusion portion that protrudes in a horizontal direction beyond a sidewall of at least one of the first support electrode and the second support electrode so that a void is present below the protrusion portion and above a plane extending from bottoms of the first and second support electrodes. | 2014-09-04 |
20140246649 | MULTI-LUMINOUS ELEMENT AND METHOD FOR MANUFACTURING SAME - The present invention relates to a multi-luminous element and a method for manufacturing the same. The present invention provides the multi-luminous element comprising: a buffer layer disposed on a substrate; a first type semiconductor layer disposed on the buffer layer; a first active layer which is disposed on the first type semiconductor layer and is patterned to expose a part of the first type semiconductor layer; a second active layer disposed on the first type semiconductor layer which is exposed by the first active layer; and a second type semiconductor layer disposed on the first active layer and the second active layer, the first and second active layers being repeatedly disposed in the horizontal direction, and the method for manufacturing the same. The multi-luminous element according to the present invention reduces loss of light emitting efficiency and can generate multi-wavelength light by repeatedly disposing the first and second active layers in the horizontal direction. | 2014-09-04 |
20140246650 | NANOSTRUCTURED DEVICE - A nanostructured device according to the invention comprises a first group of nanowires protruding from a substrate where each nanowire of the first group of nanowires comprises at least one pn- or p-i-n-junction. A first contact, at least partially encloses and is electrically connected to a first side of the pn- or p-i-n- junction of each nanowire in the first group of nanowires. A second contacting means comprises a second group of nanowires that protrudes from the substrate, and is arranged to provide an electrical connection to a second side of the pn- or p-i-n-junction. | 2014-09-04 |
20140246651 | GROWN NANOFIN TRANSISTORS - One aspect of the present subject matter relates to a method for forming a transistor. According to an embodiment, a fin of amorphous semiconductor material is formed on a crystalline substrate, and a solid phase epitaxy (SPE) process is performed to crystallise the amorphous semiconductor material using the crystalline substrate to seed the crystalline growth. The fin has a cross-sectional thickness in at least one direction less than a minimum feature size. The transistor body is formed in the crystallised semiconductor pillar between a first source/drain region and a second source/drain region. A surrounding gate insulator is formed around the semiconductor pillar, and a surrounding gate is formed around and separated from the semiconductor pillar by the surrounding gate insulator. Other aspects are provided herein. | 2014-09-04 |
20140246652 | PLANAR QUBITS HAVING INCREASED COHERENCE TIMES - An interdigitated capacitor includes a substrate and a pair of comb-like electrodes both formed on the semiconductor substrate and horizontally arranged thereon, each of the pair of comb-like electrodes including finger electrodes having a curved profile. | 2014-09-04 |
20140246653 | AMOLED Display and Manufacturing Method Thereof - An AMOLED display and a manufacturing method are proposed. The AMOLED display includes a substrate, a first TFT disposed on the substrate, and a second TFT disposed on the substrate. The first TFT includes a first gate disposed on the substrate, a first active layer disposed on the first gate, and a first source/drain disposed on the first active layer. The second TFT includes a second active layer which is in the same layer as the first active layer is, a second gate disposed on the second active layer, and a second source/drain disposed on the second active layer. The AMOLED display and the manufacturing method thereof proposed by the present invention effectively increase AMOLED resolution owing to a newly added metallic layer which separates the first gate from the second gate. Compared with the conventional technology, the present invention includes fewer manufacturing processes, which can greatly reduce production costs. | 2014-09-04 |
20140246654 | OLED DISPLAY - An OLED display is disclosed, which includes a substrate and a first and a second light emitting unit arranged on the substrate. A first, a second, a third and a fourth region are defined on the substrate, wherein the sub-pixels in the first and fourth regions and the sub-pixels in the second and third regions are symmetrical with each other. Alternatively, the sub-pixels in the first region and the sub-pixels in the third region are point symmetric to a center of the first light emitting unit, so as to improve displaying resolution of the OLED display | 2014-09-04 |
20140246655 | FLUORINE-CONTAINING PLASMA POLYMERIZED HMDSO FOR OLED THIN FILM ENCAPSULATION - Methods for forming an OLED device are described. An encapsulation structure having organic buffer layer sandwiched between barrier layers is deposited over an OLED structure. The buffer layer is formed with a fluorine-containing plasma. The second barrier layer is then deposited over the buffer layer. Additionally, to ensure good adhesion, a buffer adhesion layer is formed between the buffer layer and the first barrier layer. Finally, to ensure good transmittance, a stress reduction layer is deposited between the buffer layer and the second barrier layer. | 2014-09-04 |
20140246656 | Organometallic Complex, Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - As a novel substance having a novel skeleton, an organometallic complex having high emission efficiency and improved color purity is provided. The color purity is improved by reducing the half width of an emission spectrum. The organometallic complex is represented by General Formula (G1). In General Formula (G1), at least one of R | 2014-09-04 |
20140246657 | ANTHRACENE DERIVATIVES AND ORGANIC LIGHT EMITTING DEVICES COMPRISING THE SAME - An anthracene derivative represented by Formula 1 is disclosed. An organic light-emitting device including an anode, a cathode, and an organic layer between the anode and the cathode, where the organic layer includes at least one anthracene derivative represented by Formula 1, is also disclosed. A method of manufacturing the organic light-emitting device is also disclosed. | 2014-09-04 |
20140246658 | ORGANIC ELECTROLUMINESCENT DEVICE AND METHOD FOR MANUFACTURING THE ORGANIC ELECTROLUMINESCENT DEVICE - On or above a substrate, a first electrode layer and a connection wiring connected to the first electrode layer are provided. On or above the first electrode layer, an organic function layer made of an organic material and a second electrode layer are deposited so as to construct an organic EL element. A sealing layer is provided to cover the organic EL element and the connection wiring. The connection wiring includes a fuse part to cause a break resulting from an overcurrent. The fuse part has an upper surface in contact with a gap layer. | 2014-09-04 |
20140246659 | ORGANIC ELECTROLUMINESCENT ELEMENT, MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENT, AND LIGHT EMITTING DEVICE, DISPLAY DEVICE AND LIGHTING DEVICE EACH USING ORGANIC ELECTROLUMINSCENT ELEMENT - An organic electroluminescent element including a substrate, a pair of electrodes including an anode and a cathode, disposed on the substrate, and at least one organic layer including a light emitting layer, disposed between the electrodes, in which a compound represented by the following formula (I) is contained in any layer of the at least one organic layer. The organic electroluminescent element has high luminous efficiency and a strong effect of improving the durability by driving aging: | 2014-09-04 |
20140246660 | ORGANIC ELECTROLUMINESCENT ELEMENT AND ORGANIC ELECTROLUMINESCENT DEVICE - The objection of invention is to provide an organic electroluminescent element having an excellent current-voltage property. The organic electroluminescent element of the invention comprises an anode, a light emitting layer and a cathode, in this order, wherein a total number of kinds of an electron transport material and a light emitting material contained in the light emitting layer is five or more. Preferably, a total number of kinds of an electron transport material contained in the light emitting layer is four or more, and at least one of an ionization potential and an electron affinity of three kinds or more of the electron transport materials contained in the light emitting layer is different from each other. | 2014-09-04 |
20140246661 | ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device including a plurality of organic layers between a first electrode and an emitting layer, wherein the organic layer includes an electron blocking layer. In one embodiment, a first organic layer, an electron blocking layer, a second organic layer and an emitting layer are formed on the first electrode. The electron blocking layer has a Lowest Unoccupied Molecular Orbital (LUMO) level which is lower than that of the first organic layer. Thus, the electron blocking layer traps excess electrons injected from the emitting layer, thereby improving lifetime characteristics of the OLED. | 2014-09-04 |
20140246662 | DISPLAY APPARATUS AND ELECTRONIC APPARATUS - Disclosed herein is a display apparatus, including: a plurality of subpixels disposed adjacent each other and forming one pixel which forms a unit for formation of a color image; the plurality of subpixels including a first subpixel which emits light of the shortest wavelength and a second subpixel disposed adjacent the first subpixel; the second subpixel having a light blocking member disposed between the second subpixel and the first subpixel and having a width greater than a channel length or a channel width of a transistor which forms the second subpixel. | 2014-09-04 |
20140246663 | ORGANIC ELECTROLUMINESCENT ELEMENT - An organic electroluminescence device including: an anode; a cathode; two or more emitting units that are disposed between the anode and the cathode, each unit having an emitting layer; and a charge-generating layer that is disposed between the emitting units, wherein the charge-generating layer comprises an N layer nearer to the anode and a P layer nearer to the cathode, and the P layer comprises a compound represented by the following formula (I). | 2014-09-04 |
20140246664 | ORGANIC ELECTROLUMINESCENCE DISPLAY PANEL AND MANUFACTURING METHOD THEREFOR - To provide a transparent organic EL display panel that does not impair transparency while light is not emitted, the transparent organic electroluminescence display panel is provided with first transparent electrodes formed on a transparent substrate, a transmittance-adjusting layer formed on the transparent substrate and away from the first transparent electrodes, a partition wall formed on the transparent substrate and the transmittance-adjusting layer so as to partition the first transparent electrodes, a light-emitting medium layer formed on the first transparent electrodes and including at least an organic light-emitting layer, and a second transparent electrode formed on the light-emitting medium layer. | 2014-09-04 |
20140246665 | Encapsulation for an Organic Electronic Device - An organic electronic device and a method of making an organic electronic device are provided. An embodiment of an electronic device includes a substrate, an active layer disposed on the substrate and a thin-layer encapsulation disposed on the active layer. The device further includes a first adhesive layer disposed on the thin-layer encapsulation, wherein the first adhesive layer comprises a getter material and a covering layer disposed on the first adhesive layer. | 2014-09-04 |
20140246666 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - In general, according to one embodiment, a semiconductor device includes a first electrode, an oxide semiconductor film, an insulating film, a second electrode, a third electrode. The oxide semiconductor film is configured together with a first region, a second region, a third region, a fourth region, and a fifth region in one direction. The insulating film is provided between the first electrode and the oxide semiconductor film. The second electrode is provided on the second region and contacts the second region with an entire upper face of the second region as a contact face. The third electrode is provided on the fourth region and contacts the fourth region with an entire upper face of the fourth region as a contact face. The oxygen concentrations in the second region and in the fourth region are less than the oxygen concentration in the third region. | 2014-09-04 |
20140246667 | SENSOR CIRCUIT AND SEMICONDUCTOR DEVICE INCLUDING SENSOR CIRCUIT - A sensor circuit includes a transistor comprising an oxide semiconductor; a first circuit which supplies one of a first potential and a second potential; a first switch; a second switch; and a second circuit to which a current flowing between a source and a drain of the transistor is applied via the second switch when the first potential is applied to a gate of the transistor. The first potential is lower than a potential of the source or a potential of the drain of the transistor, and the second potential is higher than the potential of the source or the potential of the drain of the transistor. The first switch electrically connects the source and the drain of the transistor when the second potential is applied to the gate of the transistor, and electrically isolates them when the first potential is applied to the gate of the transistor. | 2014-09-04 |
20140246668 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A miniaturized transistor having high electrical characteristics is provided with high yield. In a semiconductor device including the transistor, high performance, high reliability, and high productivity can be achieved. The semiconductor device includes a base insulating film, an oxide semiconductor film with a bottom surface and side surfaces in the base insulating film and a top surface exposed from the base insulating film, a source electrode and a drain electrode over the base insulating film and the oxide semiconductor film, a gate insulating film over the oxide semiconductor film, the source electrode, and the drain electrode, and a gate electrode over the gate insulating film and overlapping the oxide semiconductor film. | 2014-09-04 |
20140246669 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - As a display device has higher definition, the number of pixels is increased and thus, the number of gate lines and signal lines is increased. When the number of gate lines and signal lines is increased, it is difficult to mount IC chips including driver circuits for driving the gate lines and the signal lines by bonding or the like, whereby manufacturing cost is increased. A pixel portion and a driver circuit for driving the pixel portion are provided on the same substrate, and at least part of the driver circuit comprises a thin film transistor including an oxide semiconductor sandwiched between gate electrodes. A channel protective layer is provided between the oxide semiconductor and a gate electrode provided over the oxide semiconductor. The pixel portion and the driver circuit are provided on the same substrate, which leads to reduction of manufacturing cost. | 2014-09-04 |
20140246670 | SEMICONDUCTOR DEVICE AND OPERATING METHOD THEREOF - A solid-state image sensor which holds a potential for a long time and includes a thin film transistor with stable electrical characteristics is provided. A reset transistor is omitted by initializing the signal charge storage portion to a cathode potential of a photoelectric conversion element portion in the solid-state image sensor. When a thin film transistor which includes an oxide semiconductor layer and has an off-state current of 1×10 | 2014-09-04 |
20140246671 | Field Effect Transistor Devices - A memcapacitor device includes a pair of opposing conductive electrodes. A semiconductive material including mobile dopants within a dielectric and a mobile dopant barrier dielectric material are received between the pair of opposing conductive electrodes. The semiconductive material and the barrier dielectric material are of different composition relative one another which is at least characterized by at least one different atomic element. One of the semiconductive material and the barrier dielectric material is closer to one of the pair of electrodes than is the other of the semiconductive material and the barrier dielectric material. The other of the semiconductive material and the barrier dielectric material is closer to the other of the pair of electrodes than is the one of the semiconductive material and the barrier dielectric material. Other implementations are disclosed, including field effect transistors, memory arrays, and methods. | 2014-09-04 |
20140246672 | Semiconductor Device - An object of one embodiment of the disclosed invention is to provide a semiconductor device having a novel structure in which stored data can be held even when power is not supplied and the number of times of writing is not limited. The semiconductor device is formed using an insulating layer formed over a supporting substrate and, over the insulating layer, a highly purified oxide semiconductor and single crystal silicon which is used as a sililcon on insulator (SOI). A transistor formed using a highly purified oxide semiconductor can hold data for a long time because leakage current thereof is extremely small. Further, by using an SOI substrate and utilizing features of thin single crystal silicon formed over an insulating layer, fully-depleted transistors can be formed; therefore, a semiconductor integrated circuit with high added values such as high integration, high-speed driving, and low power consumption can be obtained. | 2014-09-04 |
20140246673 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to improve field effect mobility of a thin film transistor using an oxide semiconductor. Another object is to suppress increase in off current even in a thin film transistor with improved field effect mobility. In a thin film transistor using an oxide semiconductor layer, by forming a semiconductor layer having higher electrical conductivity and a smaller thickness than the oxide semiconductor layer between the oxide semiconductor layer and a gate insulating layer, field effect mobility of the thin film transistor can be improved, and increase in off current can be suppressed. | 2014-09-04 |
20140246674 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to provide a semiconductor device including an oxide semiconductor film, which has stable electrical characteristics and high reliability. A stack of first and second material films is formed by forming the first material film (a film having a hexagonal crystal structure) having a thickness of 1 nm to 10 nm over an insulating surface and forming the second material film having a hexagonal crystal structure (a crystalline oxide semiconductor film) using the first material film as a nucleus. As the first material film, a material film having a wurtzite crystal structure (e.g., gallium nitride or aluminum nitride) or a material film having a corundum crystal structure (α-Al | 2014-09-04 |
20140246675 | THIN FILM TRANSISTOR AND IMAGE DISPLAYING APPARATUS - Since the gate electrode ( | 2014-09-04 |
20140246676 | BIPOLAR DEVICE HAVING A MONOCRYSTALLINE SEMICONDUCTOR INTRINSIC BASE TO EXTRINSIC BASE LINK-UP REGION - A bipolar device with an entirely monocrystalline intrinsic base to extrinsic base link-up region. To form the device, a first extrinsic base layer, which is amorphous or polycrystalline, is deposited such that it contacts an edge portion of a monocrystalline section of an intrinsic base layer through an opening in a dielectric layer. A second extrinsic base layer is deposited on the first. An anneal is performed, either before or after deposition of the second extrinsic base layer, so that the extrinsic base layers are monocrystalline. An opening is formed through the extrinsic base layers to a dielectric landing pad aligned above a center portion of the monocrystalline section of the intrinsic base layer. The dielectric landing pad is removed and a semiconductor layer is grown epitaxially on exposed monocrystalline surfaces of the extrinsic and intrinsic base layers, thereby forming the entirely monocrystalline intrinsic base to extrinsic base link-up region. | 2014-09-04 |
20140246677 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (“TFT”) array panel is provided. The TFT array panel includes an insulation substrate, a gate line formed on the insulation substrate and including a gate electrode, a data line insulated from and intersecting the gate line, and including a source electrode, a drain electrode opposite to the source electrode on the gate line, and a semiconductor formed in a layer between the data line and the gate line, and having a protruding portion extending below the drain electrode, wherein a portion of the semiconductor extending towards the drain electrode, from an area occupied by the data line, is positioned within an occupying area of the gate line including the gate electrode. | 2014-09-04 |
20140246678 | DISPLAY DEVICE AND SEMICONDUCTOR DEVICE - An object is to provide a display device with a high aperture ratio or a semiconductor device in which the area of an element is large. A channel formation region of a TFT with a multi-gate structure is provided under a wiring that is provided between adjacent pixel electrodes (or electrodes of an element). In addition, a channel width direction of each of a plurality of channel formation regions is parallel to a longitudinal direction of the pixel electrode. In addition, when a channel width is longer than a channel length, the area of the channel formation region can be increased. | 2014-09-04 |
20140246679 | III-N MATERIAL GROWN ON ErAlN BUFFER ON Si SUBSTRATE - III-N material grown on a buffer on a silicon substrate includes a single crystal electrically insulating buffer positioned on a silicon substrate. The single crystal buffer includes rare earth aluminum nitride substantially crystal lattice matched to the surface of the silicon substrate, i.e. a lattice co-incidence between REAlN and Si better than a 5:4 ratio. A layer of single crystal III-N material is positioned on the surface of the buffer and substantially crystal lattice matched to the surface of the buffer. | 2014-09-04 |
20140246680 | JFET Devices with Increased Barrier Height and Methods of Making Same - Devices for providing transistors with improved operating characteristics are provided. In one example, a system includes a processor and a memory device. A transistor of the processor or the memory device includes a channel in a semiconductor substrate that is undoped or intrinsic. A metal gate is disposed directly on top of the channel, and the bandgap of the semiconductor substrate and the work function of the metal form a Schottky barrier. | 2014-09-04 |
20140246681 | HIGH CURRENT, LOW SWITCHING LOSS SiC POWER MODULE - A power module includes a housing with an interior chamber and multiple switch modules mounted within the interior chamber of the housing. The switch modules are interconnected and configured to facilitate switching power to a load. Each one of the switch modules includes at least one transistor and at least one diode. The at least one transistor and the at least one diode may be formed from a wide band-gap material system, such as silicon carbide (SiC), thereby allowing the power module to operate at high frequencies with lower switching losses when compared to conventional power modules. | 2014-09-04 |
20140246682 | SEMICONDUCTOR ELEMENT - In a semiconductor element, a body region of a second conductivity type includes a first body region in contact with a surface of a first silicon carbide semiconductor layer, and a second body region in contact with a bottom surface of the body region of the second conductivity type. The impurity concentration of the first body region is twice or more the impurity concentration of the second body region. A second silicon carbide semiconductor layer of a first conductivity type, which is a channel layer, has an impurity concentration distribution in a direction perpendicular to a semiconductor substrate, and an impurity concentration on a side in contact with the gate insulating film is lower than an impurity concentration on a side in contact with the first body region. | 2014-09-04 |
20140246683 | SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures. | 2014-09-04 |
20140246684 | NANO STRUCTURED LEDS - An embodiment relates to a nanowire-containing LED device with optical feedback comprising a substrate, a nanowire protruding from a first side the substrate, an active region to produce light, a optical sensor and a electronic circuit, wherein the optical sensor is configured to detect at least a first portion of the light produced in the active region, and the electronic circuit is configured to control an electrical parameter that controls a light output of the active region. Yet, another embodiment relates to an image display having the nanowire-containing LED device with optical feedback. | 2014-09-04 |
20140246685 | METHOD FOR MANUFACTURING DISPLAY ELEMENT, DISPLAY ELEMENT, AND DISPLAY DEVICE - According to one embodiment, a method for manufacturing a display element is disclosed. The method can include forming a peeling layer, forming a resin layer, forming a barrier layer, forming an interconnect layer, forming a display layer, and removing. The peeling layer is formed on a major surface of a base body. The major surface has first, second, and third regions. The peeling layer includes first, second, and third peeling portions. The resin layer is formed on the peeling layer. The resin layer includes first and second resin portions. The barrier layer is formed on the first, second, and third peeling portions. The interconnect layer is formed on the barrier layer. The display layer is formed on the interconnect layer. The first peeling portion is removed from the first resin portion and the second peeling portion is removed from the second resin portion. | 2014-09-04 |
20140246686 | OPTICAL SEMICONDUCTOR DEVICE INCLUDING ANTIPARALLEL SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND SCHOTTKY DIODE ELEMENT - An optical semiconductor device includes a semiconductor support substrate of a conductivity type having a first resistivity, a semiconductor layer of the conductivity type formed on the semiconductor support substrate and having a second resistivity higher than the first resistivity, a first power supply terminal having a first metal in Schottky barrier contact with the semiconductor layer along with the semiconductor support substrate, so that a Schottky diode element is constructed by the first power supply terminal and the semiconductor layer along with the semiconductor support substrate, a second power supply terminal having a second metal in ohmic contact with the semiconductor support substrate, and a semiconductor light-emitting element connected between the first and second power supply terminals, the semiconductor light-emitting element being antiparallel with the Schottky diode with respect to the first and second power supply terminals. | 2014-09-04 |
20140246687 | CHIP ON FILM PACKAGE AND DISPLAY DEVICE INCLUDING THE SAME - A chip on film package includes a flexible base film having a first surface and a second surface opposite to each other that includes at least one through hole therein, a plurality of wirings disposed on the first surface and the second surface of the base film, respectively, that include a first lead and a second lead connected to each other through the at least one through hole, and a display panel driving chip and a touch panel sensor chip, each mounted on any one of the first surface and the second surface of the base film, wherein at least one of the display panel driving panel and the touch panel sensor chip is electrically connected to the first and second leads. | 2014-09-04 |
20140246688 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes: at least one optoelectronic semiconductor chip, a leadframe having one a plurality of leadframe parts, at least two electrical connection means via which the semiconductor chip is electrically contact-connected to the leadframe, and a potting body, which is fitted to the leadframe and mechanically supports the latter, wherein the one or at least one of the leadframe parts is provided with a reflective coating at a top side, the semiconductor chip is fitted on the reflective coating at the top side, the leadframe includes at least two contact locations, onto which the connection means are directly fitted, and the contact locations are formed from a material that is different from the reflective coating. | 2014-09-04 |
20140246689 | LED Lamp with Quantum Dots Layer - A lighting device | 2014-09-04 |
20140246690 | Optoelectronic Semiconductor Component - An optoelectronic semiconductor component includes one or more light-emitting diode chips. The light-emitting diode chip has a main radiation side. A diaphragm is arranged downstream of the main radiation side along a main radiation direction of the light-emitting diode chip. The diaphragm is mounted on or in a component housing. The main radiation side has a mean edge length of at least 50 μm. The diaphragm can be switched from light-impervious to light-pervious. The diaphragm comprises precisely one opening region for radiation transmission. The semiconductor component can be used as a flashlight for a mobile image recording device. | 2014-09-04 |
20140246691 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light emitting device includes, a first semiconductor layer, a second semiconductor layer, a first electrode, a second electrode, a first interconnection, and a second interconnection. The first semiconductor layer has a first major surface, a second major surface provided on an opposite side to the first major surface, a protrusion selectively provided on the second major surface, and a trench formed from the second major surface to the first major surface. The second semiconductor layer is stacked on the protrusion of the first semiconductor layer and includes a light emitting layer. The first electrode is provided on the second major surface of the first semiconductor layer and a side surface of the trench. The second electrode is provided on a surface of the second semiconductor layer on an opposite side to the first semiconductor layer. | 2014-09-04 |
20140246692 | PHOSPHOR MIXTURE, OPTOELECTRONIC COMPONENT COMPRISING A PHOSPHOR MIXTURE, AND STREET LAMP COMPRISING A PHOSPHOR MIXTURE - A phosphor mixture includes a first phosphor and a second phosphor, wherein an emission spectrum of the first phosphor has a relative intensity maximum in a yellow spectral range and an emission spectrum of the second phosphor has a relative intensity maximum in a red spectral range, the first phosphor corresponds to the following chemical formula: (Lu | 2014-09-04 |
20140246693 | LIGHT EMITTING DIODE (LED) RED FLUORESCENT MATERIAL AND LIGHTING DEVICE HAVING THE SAME - Provided are a Light Emitting Diode (LED) red fluorescent material and a lighting device having the same. The florescent material consists of elements M, A, D, X, L and Z, wherein element M at least contains one or more than one element of Be, Mg, Ca, Sr, Ba and Zn; element A at least contains one or more than one element of B, Al, Ga, In, La, Gd, Lu, Sc and Y; element D at least contains one or more than one element of Si, Ge, C, Sn, Ti, Zr and Hf; element X at least contains one or more than one element of N, O and F; element L at least contains one or more than one element of S, Se and Te; and element Z at least contains one or more than one element of a rare earth element or a transition-metal element. | 2014-09-04 |
20140246694 | Display Device and Method for Manufacturing the Same - An object of the present invention is to provide such a sealing structure that a material to be a deterioration factor such as water or oxygen is prevented from entering from external and sufficient reliability is obtained in a display using an organic or inorganic electroluminescent element. In view of the above object, focusing on permeability of an interlayer insulating film, deterioration of an electroluminescent element is suppressed and sufficient reliability is obtained by preventing water entry from an interlayer insulating film according to the present invention. | 2014-09-04 |
20140246695 | ISOLATION STRUCTURE OF SEMICONDUCTOR DEVICE - The invention relates to an isolation structure of a semiconductor device. An exemplary isolation structure for a semiconductor device comprises a substrate comprising a trench; a strained material in the trench, wherein a lattice constant of the strained material is different from a lattice constant of the substrate; an oxide layer of the strained material over the strained material; a high-k dielectric layer over the oxide layer; and a dielectric layer over the high-k dielectric layer filling the trench. | 2014-09-04 |
20140246696 | TRANSISTOR WITH EMBEDDED STRAIN-INDUCING MATERIAL FORMED IN CAVITIES FORMED IN A SILICON/GERMANIUM SUBSTRATE - When forming sophisticated semiconductor devices including N-channel transistors with strain-inducing embedded source and drain semiconductor regions, N-channel transistor performance may be enhanced by selectively growing embedded pure silicon source and drain regions in cavities exposing the silicon/germanium layer of a Si/SiGe-substrate, wherein the silicon layer of the Si/SiGe-substrate may exhibit a strong bi-axial tensile strain. The bi-axial tensile strain may improve both electron and hole mobility. | 2014-09-04 |
20140246697 | Semiconductor Device with Charge Compensation Structure - A semiconductor device is provided. The semiconductor device includes a semiconductor body having a main surface. In a vertical cross-section which is substantially orthogonal to the main surface the semiconductor body includes a vertical trench, an n-type silicon semiconductor region, and two p-type silicon semiconductor regions each of which adjoins the n-type silicon semiconductor region and is arranged between the n-type silicon semiconductor region and the main surface. The vertical trench extends from the main surface at least partially into the n-type silicon semiconductor region and includes a compound semiconductor region which includes silicon and germanium and is arranged between the two p-type silicon semiconductor regions. The compound semiconductor region and the two p-type silicon semiconductor regions include n-type dopants and p-type dopants. An integrated concentration of the n-type dopants of the compound semiconductor region is larger than an integrated concentration of the p-type dopants of the compound semiconductor region. | 2014-09-04 |
20140246698 | CHANNEL SiGe REMOVAL FROM PFET SOURCE/DRAIN REGION FOR IMPROVED SILICIDE FORMATION IN HKMG TECHNOLOGIES WITHOUT EMBEDDED SiGe - When forming sophisticated P-channel transistors, a semiconductor alloy layer is formed on the surface of the semiconductor layer including the transistor active region. When a metal silicide layer is formed contiguous to this semiconductor alloy layer, an agglomeration of the metal silicide layer into isolated clusters is observed. In order to solve this problem, the present invention proposes a method and a semiconductor device wherein the portion of the semiconductor alloy layer lying on the source and drain regions of the transistor is removed before formation of the metal silicide layer is performed. In this manner, the metal silicide layer is formed so as to be contiguous to the semiconductor layer, and not to the semiconductor alloy layer. | 2014-09-04 |
20140246699 | TUNNEL JUNCTION FIELD EFFECT TRANSISTORS HAVING SELF-ALIGNED SOURCE AND GATE ELECTRODES AND METHODS OF FORMING THE SAME - Methods of forming a transistor include providing a semiconductor epitaxial structure including a channel layer and barrier layer on the channel layer, forming a gate electrode on the barrier layer, etching the semiconductor epitaxial structure using the gate electrode as an etch mask to form a trench in the semiconductor epitaxial structure, and depositing a source metal in the trench. The trench extends at least to the channel layer, and the source metal forms a Schottky junction with the channel layer. Related semiconductor device structures are also disclosed. | 2014-09-04 |
20140246700 | NITRIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a nitride semiconductor device includes a first semiconductor, a second semiconductor layer, a third semiconductor layer, a fourth semiconductor layer, a first electrode, a second electrode and a third electrode. The first, second and fourth semiconductor layers include a nitride semiconductor. The second semiconductor layer is provided on the first semiconductor layer, has a band gap not less than that of the first semiconductor layer. The third semiconductor layer is provided on the second semiconductor layer. The third semiconductor layer is GaN. The fourth semiconductor layer is provided on the third semiconductor layer to have an interspace on a part of the third semiconductor layer, has a band gap not less than that of the second semiconductor layer. The first electrode is provided on a portion of the third semiconductor layer. The fourth semiconductor layer is not provided on the portion. | 2014-09-04 |
20140246701 | Flexible, space-efficient I/O circuitry for integrated circuits - Flexible, space-efficient I/O architectures for integrated circuits simplify circuit design and shorten design times. In one aspect, cells for power supply pads are eliminated, in part by locating ESD protection circuitry for these pads underneath the pads themselves, leaving only signal I/O buffers. Pads coupled to the signal I/O buffers may be defined as either signal I/O pads or power supply pads in accordance with customization circuitry. Customization circuitry also provides for flexible bank architectures, where signal I/O buffers within a bank share power supply requirements that may be different from power supply requirements of signal I/O buffers of another bank. The number of banks and the number of signal I/O buffers belonging to each bank is flexibly defined. Customization circuitry also provides for flexible pad options, whereby the IC pads may be configured for different packaging technology, for example, for wire bonding for flip-chip bonding, or for other types of bonding. | 2014-09-04 |
20140246702 | Flexible, space-efficient I/O circuitry for integrated circuits - Flexible, space-efficient I/O architectures for integrated circuits simplify circuit design and shorten design times. In one aspect, cells for power supply pads are eliminated, in part by locating ESD protection circuitry for these pads underneath the pads themselves, leaving only signal I/O buffers. Pads coupled to the signal I/O buffers may be defined as either signal I/O pads or power supply pads in accordance with customization circuitry. Customization circuitry also provides for flexible bank architectures, where signal I/O buffers within a bank share power supply requirements that may be different from power supply requirements of signal I/O buffers of another bank. The number of banks and the number of signal I/O buffers belonging to each bank is flexibly defined. Customization circuitry also provides for flexible pad options, whereby the IC pads may be configured for different packaging technology, for example, for wire bonding for flip-chip bonding, or for other types of bonding. | 2014-09-04 |
20140246703 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE - In a semiconductor integrated circuit device, a plurality of electrode pads for external connection are arranged in a zigzag pattern. Some electrode pads of the electrode pads of the plurality of I/O cells which are closer to a side of the semiconductor chip, each have an end portion closer to the side of the semiconductor chip, the end portion being set at the same position as that of an end portion of the corresponding I/O cell. A power source-side protective circuit and a ground-side protective circuit against discharge of static electricity are provided with the power source-side protective circuit being closer to the scribe region. A distance between a center position of one of the electrode pads and the ground-side protective circuit of the corresponding I/O cell and a distance between a center position of the other one electrode pad and the ground-side protective circuit of the corresponding I/O cell are both short and are substantially equal between each I/O cell. | 2014-09-04 |
20140246704 | INTEGRATED CIRCUIT DEVICE - An integrated circuit device includes a fuse in which a pair of terminal portions connected to different conductive components is provided on both sides of a cuttable portion that is cut as needed by being irradiated with laser light, the cuttable portion and the pair of terminal portions being integrally formed. The cuttable portion may be thinner than the terminal portions. | 2014-09-04 |
20140246705 | Programmable Leakage Test For Interconnects In Stacked Designs - Aspects of the invention relate to techniques of testing interconnects in stacked designs for leakage defects. Logic “1” or “0” is first applied to one end of an interconnect during a first pulse. Then, logic value at the one end is captured, which triggered by an edge of a second pulse. The first pulse precedes the second pulse by a time period being selected from a plurality of delay periods. The plurality of delay periods is generated by a device shared by a plurality of interconnects. | 2014-09-04 |
20140246706 | SOLID-STATE IMAGING DEVICE - A solid-state imaging device includes: pixels arranged in a matrix, a semiconductor substrate; a first electrode formed above the semiconductor substrate for each of the pixels; a photoelectric conversion film formed on the first electrode, for photoelectric conversion of light into signal charge; a charge accumulation region formed in the semiconductor substrate for accumulating the signal charge generated through the photoelectric conversion in the photoelectric conversion film; a contact plug for electrically connecting the first electrode and the charge accumulation region in a corresponding pixel; a high-concentration impurity region formed on a surface of the charge accumulation region, in a region in contact with the contact plug; a surface impurity region formed on the surface of the charge accumulation region, in a region not in contact with the contact plug; and a low-concentration impurity region formed between the high-concentration impurity region and the surface impurity region. | 2014-09-04 |
20140246707 | Image Sensors Including Conductive Pixel Separation Structures - An image sensor includes a substrate having adjacent pixel regions and respective photodiode regions therein, and a pixel separation portion including a trench extending into the substrate between the adjacent pixel regions. The trench includes a conductive common bias line therein and an insulating device isolation layer between the common bias line and surfaces of the trench. A conductive interconnection is coupled to the common bias line and is configured to provide a negative voltage thereto. Related fabrication methods are also discussed. | 2014-09-04 |
20140246708 | MEMS Structures and Methods of Forming the Same - An integrated circuit device includes a first layer comprising at least two partial cavities, an intermediate layer bonded to the first layer, the intermediate layer formed to support at least two Micro-electromechanical System (MEMS) devices, and a second layer bonded to the intermediate layer, the second layer comprising at least two partial cavities to complete the at least two partial cavities of the first layer through the intermediate layer to form at least two sealed full cavities. The at least two full cavities have different pressures within. | 2014-09-04 |
20140246709 | SEMICONDUCTOR DEVICE HAVING A SPACER AND A LINER OVERLYING A SIDEWALL OF A GATE STRUCTURE AND METHOD OF FORMING THE SAME - A semiconductor device includes a gate structure over a substrate. The device further includes an isolation feature in the substrate and adjacent to an edge of the gate structure. The device also includes a spacer overlying a sidewall of the gate structure. The spacer has a bottom lower than a top surface of the substrate. | 2014-09-04 |
20140246710 | CYCLIC DEPOSITION ETCH CHEMICAL VAPOR DEPOSITION EPITAXY TO REDUCE EPI ABNORMALITY - A semiconductor substructure with an improved source/drain structure is described. The semiconductor substructure can include an upper surface; a gate structure formed over the substrate; a spacer formed along a sidewall of the gate structure; and a source/drain structure disposed adjacent the gate structure. The source/drain structure is disposed over or on a recess surface of a recess that extends below said upper surface. The source/drain structure includes a first epitaxial layer, having a first composition, over or on the interface surface, and a subsequent epitaxial layer, having a subsequent composition, over or on the first epitaxial layer. A dopant concentration of the subsequent composition is greater than a dopant concentration of the first composition, and a carbon concentration of the first composition ranges from 0 to 1.4 at.-%. Methods of making semiconductor substructures including improved source/drain structures are also described. | 2014-09-04 |
20140246711 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, METHOD OF MANUFACTURING DISPLAY UNIT, AND METHOD OF MANUFACTURING ELECTRONIC APPARATUS - A semiconductor device includes: a gate electrode and a wiring; a first insulating film covering the gate electrode and the wiring; a semiconductor film opposed to the gate electrode with the first insulating film in between; a first concave section located in a position adjacent to the semiconductor film; a connection hole, the connection hole being provided in the first insulating film, and the connection hole reaching the wiring, and a first electrically-conductive film, the first electrically-conductive film being electrically connected to the wiring through the connection hole, and the first electrically-conductive film being buried in the first concave section. | 2014-09-04 |
20140246712 | INTEGRATED CIRCUIT METAL GATE STRUCTURE HAVING TAPERED PROFILE - A device having a gate where the profile of the gate provides a first width at a top region and a second width at a bottom region is described. The gate may include tapered sidewalls. The gate may be a metal gate structure. | 2014-09-04 |
20140246713 | SEMICONDUCTOR STRUCTURE, METHOD FOR FORMING THE SAME AND METHOD FOR SUPPRESSING HOT CLUSTER - A semiconductor structure for suppressing hot clusters includes a substrate of a first dopant concentration, an epitaxial layer having a second dopant concentration smaller than the first dopant concentration and directly disposed on the substrate, a dopant gradient region disposed in the epitaxial layer and having a gradient decreasing from the substrate to the epitaxial layer, a shallow trench isolation disposed between a first element region and a second element region, and a shallow trench doping region surrounding the shallow trench isolation and near the dopant gradient region to suppress a hot cluster formed by the first element region to jeopardize the second element region. | 2014-09-04 |
20140246714 | IMAGE SENSOR HAVING THIN DARK SHIELD - An image sensor and method of manufacturing the same are provided. The image sensor can include a pixel array region having an active pixel area and a dark pixel area surrounding the active pixel area. A dark shield can be formed in the dark pixel area to inhibit light. Dark pixels can be provided under the dark shield. The dark shield can include a thin film including silicon chromium (SiCr). | 2014-09-04 |
20140246715 | DECOUPLING CAPACITOR FOR INTEGRATED CIRCUIT - An integrated circuit includes a capacitor having first, second and third nodes. The first and second nodes of the first transistor are connected together and the first and second nodes of the second transistor are connected together. The third node of the first transistor is connected to the third node of the second transistor. Each of the third nodes is constructed so that each node comprises a width and a length that is at least ten percent of the width. | 2014-09-04 |