| 35th week of 2011 patent applcation highlights part 11 |
| Patent application number | Title | Published |
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| 20110210262 | APPARATUS AND METHOD FOR DETECTING HIGH-ENERGY RADIATION - An apparatus for spatially correcting an image frame is disclosed. In some embodiments, the apparatus stores a frame of pixel values and scans a multi-pixel correction window across the frame. Spatial correction is performed on pixels within the window at correction positions during the scan. The spatial correction comprises estimating pixel values at value estimation positions based on one or more pixel values within the window for pixels satisfying a logical condition. The value estimation positions correspond to pixel values which do not fall within the window again during the scan. Further disclosed is an apparatus for detecting high-energy radiation, in which integration circuitry is used for integrating charge responsive to radiation photon interaction events. The circuits are controllable in accordance with an exposure control signal to vary an exposure window duration according to an operating parameter of the apparatus. | 2011-09-01 |
| 20110210263 | Particle Beam Transport Apparatus And Method Of Transporting A Particle Beam With Small Beam Spot Size - An apparatus for transporting a charged particle beam is provided. The apparatus may include: means for scanning the charged particle beam on a target, a dipole magnet arranged upstream of the means for scanning, at least three quadrupole lenses arranged between the dipole magnet and the means for scanning, and means for adjusting the field strength of at least three quadrupole lenses in function of the scanning angle of the charged particle beam. The apparatus can be made at least single achromatic. | 2011-09-01 |
| 20110210264 | Distributed Ion Source Acceleration Column - An ion beam system uses a separate accelerating electrode, such as a resistive tube, to accelerate the ions while maintaining a low electric field at an extended, that is, distributed ion source, thereby improving resolution. A magneto-optical trap can be used as the ion source. | 2011-09-01 |
| 20110210265 | Method and Apparatus for a Porous Metal Electrospray Emitter - An ionic liquid ion source can include a microfabricated body including a base and a tip. The microfabricated body can be formed of a porous metal compatible (e.g., does not react or result in electrochemical decaying or corrosion) with an ionic liquid or a room-temperature molten salt. The microfabricated body can have a pore size gradient that decreases from the base of the body to the tip of the body, so that the ionic liquid can be transported through capillarity from the base to the tip. | 2011-09-01 |
| 20110210266 | METHOD OF IRRADIATING A LIQUID - A method and system of providing ultrapure water for semiconductor fabrication operations is provided. The water is treated by utilizing a free radical scavenging system and a free radical removal system. The free radical scavenging system can utilize actinic radiation with a free radical precursor compound, such as ammonium persulfate. The free radical removal system can comprise use of a reducing agent. The ultrapure water may be further treated by utilizing ion exchange media and degasification apparatus. A to control system can be utilized to regulate addition of the precursor compound, the intensity of the actinic radiation, and addition of the reducing agent to the water. | 2011-09-01 |
| 20110210267 | ACTINIC RADIATION REACTOR - A method and system of providing ultrapure water for semiconductor fabrication operations is provided. The water is treated by utilizing a free radical scavenging system and a free radical removal system. The free radical scavenging system can utilize actinic radiation with a free radical precursor compound, such as ammonium persulfate. The free radical removal system can comprise use of a reducing agent. The ultrapure water may be further treated by utilizing ion exchange media and degasification apparatus. A control system can be utilized to regulate addition of the precursor compound, the intensity of the actinic radiation, and addition of the reducing agent to the water. | 2011-09-01 |
| 20110210268 | Disinfecting Device Having a Power Supply and a Fluid Outlet - A disinfecting device having an outlet ( | 2011-09-01 |
| 20110210269 | Non-Linear Optical System and Techniques - Methods and systems are described using a non-linear optical system comprising a laser and a light delivery system comprising a single mode fiber, a mode converter, and a high order mode fiber, wherein the light delivery system that receives light from the source and provides a structured free-space beam having an embedded Gaussian beam. The light delivery system functions to illuminate a region of a sample and generate a non-linear response in a spatial region smaller than that associated with a Gaussian beam having a width comparable to the width of the embedded Gaussian beam. In another aspect, the light delivery system illuminates a region of a sample and generates a non-linear emission of radiation, is depicted. A further aspect of this embodiment includes an imaging assembly for detecting the non-linear emission and using a signal derived from the detected emission to generate a microscopic image of the sample. | 2011-09-01 |
| 20110210270 | OPTICAL TOMOGRAPHY MEASUREMENT DEVICE - An optical tomography measurement device that includes an illumination component, a light reception component, a change component, an acquisition component and a correction component is provided. The acquisition component acquires reference data corresponding to an amount of fluorescent light received by the light reception component when an excitation light is illuminated onto the reference position, first data corresponding to the amount of fluorescent light received by the light reception component when the excitation light is illuminated onto a first illumination position, and second data corresponding to the amount of fluorescent light received by the light reception component when the excitation light is illuminated on a second illumination position. The correction component corrects the reference data so as to remove fluorescent light components emitted from a fluorescent marking agent outside of a measurement plane based on the first data and the second data. | 2011-09-01 |
| 20110210271 | Detector System For Unidentified Substances - Disclosed herein is a detection system for identifying an unidentified substance in a sample, comprising a light emitting source; a circuit board; a trigger, that activates a pulse of electrons from the circuit board to the light emitting source such that the light emitting source emits light; a detector for collecting light from the unidentified substance; and a central processing unit for analyzing the collected light to identify the unidentified substance. | 2011-09-01 |
| 20110210272 | Methods and Products for Analyzing Polymers - Methods and products for analyzing polymers are provided. The methods include methods for determining various other structural properties of the polymers. | 2011-09-01 |
| 20110210273 | UV LAMP - The invention relates to an UV lamp ( | 2011-09-01 |
| 20110210274 | METHOD FOR ALLEVIATION OF MENOPAUSAL SYMPTOMS - A method of alleviating menopausal symptoms in a woman is disclosed wherein a significant portion of the woman's body is shielded from high frequency electromagnetic radiation for a period of time sufficient to reduce the symptoms while permitting low frequency electromagnetic radiation to reach her body. The method may be accomplished by using a radiation shielding textile as a bed sheet on which the woman sleeps at night or during the day by fashioning a garment from the radiation-shielding textile or using a sheet or cover, or fashioning a wrap. The radiation-shielding textile found to be suitable is a cloth woven of yarn consisting of a textile fibre, such as nylon, and from two to thirty-five percent by weight of electrically conductive filament, preferably stainless steel. | 2011-09-01 |
| 20110210275 | Magnetic Valve Actuator For Container Filling Machine - Disclosed are valve actuator assemblies for high speed bottle filling machines. These actuators have a shaft that is pivotable on its longitudinal axis, a linkage fork connected to the shaft to pivot therewith, and a follower arm coupled by a magnetic coupling to the shaft. The magnetic coupling helps reduce carbon dioxide leakage. There may also be a second set of magnets which define pivoting dwell positions. | 2011-09-01 |
| 20110210276 | System and Method of Touch Free Automatic Faucet - A system and method of Touch Free Automatic faucet controlled by electronic sensors provides a Primary-Water-Flow-Mode, a Continue-Water-Flow-Mode, a Temperature-Control-Mode, a Faucet-Pause-Mode, an Adjust-Water-Flow-Mode and a Flow-Temperature-Default-Setting-Mode for users to control faucet water flow and water temperature without touching any parts of faucet body. The system comprises at least three electronic sensors (infrared sensors), a logical processor circuit board, an electricity power supply package, a water flow control valve assembly, a temperature control valve assembly, at least one faucet body housing and at least one inlet fluid line. From the outputs of the sensors, the logical processor responds to the flow control valve assembly and to the temperature control valve assembly to control water flow and temperature to the faucet spout. This Touch Free Automatic faucet hence provides an easy-convenient operation, water conservation and personal hygiene protection for commercial and residential applications. | 2011-09-01 |
| 20110210277 | ELECTROMAGNETIC REGULATOR - An electromagnetic regulator having an armature unit with a plunger unit ( | 2011-09-01 |
| 20110210278 | VALVE FOR UNIVERSAL UTILIZATION AND SEVERAL PURPOSES - The subject of the invention is a valve for universal utilization and several purposes allowing by its formation the relatively high flow in the basic state and slightly open state of the valve even in case of small pressure differences in case of low pressure; furthermore the formation of the valve allows to ensure providing functions depending on the direction of flow that in given case can be regulated regarding back-pressure, partial back-pressure, pressure relief, partial relief limiting functions. | 2011-09-01 |
| 20110210279 | Gas Valves for Pneumatic Devices - An improved valve assembly for routing gas, such as a high-pressure sour gas from an oil well, into a pneumatic device is disclosed. The pneumatic device may be in operational communication with an injection pump adapted to inject chemicals, such as methanol, back into the oil well. The valve assembly may be operated by a gas cylinder to direct the high-pressure gas from a pressure port into the intake pneumatic device and route the exhaust gas from the pneumatic device to an exhaust port. The valve assembly includes a valve element slidably disposed in a valve housing, wherein the valve element includes a frustoconical sealing surface that is complementary to a frustoconical valve seat provided on the interior surface of the valve housing. | 2011-09-01 |
| 20110210280 | SIZING COMPOSITION FOR MINERAL WOOL BASED ON HYDROGENATED SUGAR AND INSULATING PRODUCTS OBTAINED - A sizing composition for insulating products based on mineral wool, in particular of glass or of rock, which includes at least one hydrogenated sugar and at least one polyfunctional crosslinking agent. Another subject matter of the present invention is the insulating products based on mineral fibers thus obtained. | 2011-09-01 |
| 20110210281 | PIEZOELECTRIC/ELECTROSTRICTIVE CERAMICS SINTERED BODY - A piezoelectric/electrostrictive ceramic sintered body has a microstructure in which a matrix phase and an additional material phase having different compositions coexist and the additional material phase is dispersed in the matrix phase. A residual strain ratio of the additional material phase alone is larger than a residual strain ratio of the matrix phase alone. The matrix phase and the additional material phase have a composition in which a Mn compound containing Mn atoms of 0 parts by mole or more and 3 parts by mole or less and a Ba compound containing Ba atoms of 0 parts by mole or more and 1 part by mole or less are contained in a composite of 100 parts by mole represented by a general formula {Li | 2011-09-01 |
| 20110210282 | Utilizing nanoscale materials as dispersants, surfactants or stabilizing molecules, methods of making the same, and products produced therefrom - Novel dispersions of nanoparticles such as carbon nanotubes, carbon nanofibers, boron nanotubes, clay nanotubes, other nanotube species, buckminster fullerenes, graphene, graphene nanoplatelets, elements, oxides, nanoparticles, nanoclusters, nanopowders, nanocrystals, nanoscale molecules, other nanoscale materials, as well as products produced therefrom are described. These dispersions can then be further processed into a wide variety of products including but not limited to composite materials, polymers, resins, epoxies, emulsions, cements, coatings, clays, films, membranes, paper, fibers, inks, paints, pastes, electronics, spintronics, optics, biotechnology materials, electrodes, field emission or other displays, plating, capacitance, ceramics, catalysts, clays, ballistic materials, drug delivery, doping, magnetics, dielectrics, barrier layers, selective ion flow membranes, batteries, fuel cells, solar and other applications. The invention can also be used to protect electronics from electromagnetic interference, radio frequency interference or radio frequency identification. Most applications that utilize nanoparticles can benefit from this invention. | 2011-09-01 |
| 20110210283 | Low melting temperature alloys with magnetic dispersions - A low melting temperature composite material including an alloy having about 0.1% by weight to about 99% by weight of tin and about 0.1% by weight to about 90% by weight of an element selected from the group consisting of silver and gold, and about 0.1% by weight to about 50% by weight of magnetic particles dispersed in the alloy. Method of heating such a composite material, remotely manipulating such a composite material with magnetic fields, enhancing the mechanical properties of such a material, and making such a material are also disclosed. | 2011-09-01 |
| 20110210284 | ANTI-ICING COMPOSITION - An anti-icing composition is provided, which comprises methyl cellulose from about 5 to about 15% (v/v); propylene glycol from about 9 to about 11% (v/v); vegetable glycerin from about 9 to about 11% (v/v); isopropyl alcohol (90%) from about 42 to about 49% (v/v), and water from about 10% to about 35% (v/v). Methods of preparing and using the anti-icing composition are also described. | 2011-09-01 |
| 20110210285 | LIQUID ALKALI METAL WITH DISPERSED NANOPARTICLES AND METHOD OF MANUFACTURING THE SAME - The present invention relates to maintaining the fundamental physical properties of a liquid alkali metal with dispersed nanoparticles which is such that nanoparticles are uniformly dispersed and mixed in a liquid alkali metal used in heat exchange, cooling and other applications, and suppressing the reaction of the liquid alkali metal with dispersed nanoparticles. Provided is a method of manufacturing a liquid alkali metal with dispersed nanoparticles by dispersing nanoparticles in a liquid alkali metal. In this method, the nanoparticles are made of a metal having a large atomic bonding due to a combination with the liquid alkali metal compared to the atomic bonding of atoms of the liquid alkali metal and a metal having a large amount of charge transfer is used in the nanoparticles. The liquid alkali metal is selected from sodium, lithium and sodium-potassium alloys, and the nanoparticles to be dispersed are made of transition metals, such as titanium, vanadium, chromium, iron, cobalt, nickel and copper. | 2011-09-01 |
| 20110210286 | Remediation of Waste Water - A non-toxic waste water treatment composition is provided. The waste water treatment composition is formed from: (a) an alkanolamide; (b) an ethoxylated alkylphenol, ethoxylated aryl phenol, or combination thereof; (c) a first surfactant selected from the group consisting of: an ethoxylated alcohol, a glycerol ester, a propoxylated fatty acid, an ethoxylated fatty acid, a propoxylated alcohol, an ethoxylated alcohol, a propoxylated alkyl phenol, an ethoxylated alkyl phenol, and a combination thereof; (d) a second surfactant selected from the group consisting of: a sulfosuccinate, a sulfosuccinate derivative, an imidazoline, an imidazoline derivative, and a combination thereof; and (e) optionally, a foaming agent. Methods for forming the non-toxic composition and for treating waste water with the composition are also provided. Finally an apparatus for introducing a waste water treatment composition into a waste water system is provided. The apparatus includes tubing for delivering the waste water treatment composition to at least one spray nozzle and a swivel fitting connecting the tubing to the spray nozzle. The spray nozzle is configured to deliver the waste water treatment composition into the waste water system, and the swivel fitting permits 360 degree rotation of the spray nozzle around the tubing. | 2011-09-01 |
| 20110210287 | PROCESS FOR PRODUCING LITHIUM MANGANATE PARTICLES AND NON-AQUEOUS ELECTROLYTE SECONDARY BATTERY - According to the present invention, there is provided a process for producing lithium manganate particles having a high output and an excellent high-temperature stability. The present invention relates to a process for producing lithium manganate particles comprising the steps of mixing a lithium compound, a manganese compound and a boron compound with each other; and calcining the resulting mixture in a temperature range of 800 to 1050° C., wherein an average particle diameter (D | 2011-09-01 |
| 20110210288 | Method of Making Active Materials for Use in Secondary Electrochemical Cells - The present invention provides for the preparation of an “optimized” VPO | 2011-09-01 |
| 20110210289 | AZEOTROPIC COMPOSITIONS OF 2-CHLORO-3,3,3-TRIFLUOROPROPENE (HCFC-1233XF), 2-CHLORO-1,1,1,2-TETRAFLUOROPROPANE (HCFC-244BB), AND HYDROGEN FLUORIDE (HF) - Provided are ternary azeotropic and azeotrope-like compositions of 2-chloro-3,3,3-trifluoropropene (HCFO-1233xf), 2-chloro-1,1,1,2-tetrafluoropropane (HCFC-244bb), and hydrogen fluoride (HF). Such azeotropic and azeotrope-like compositions are useful as intermediates in the production of 2,3,3,3-tetrafluoropropene (HFO-1234yf). | 2011-09-01 |
| 20110210290 | LIQUID-CRYSTALLINE POLYMER COMPOSITION AND MOLDED ARTICLE THEREOF - The present invention provides a liquid-crystalline polymer composition comprising: | 2011-09-01 |
| 20110210291 | NOVEL RARE-EARTH DOPED FLUORIDES COMPOSITIONS - The present invention is directed to rare-earth doped solid state solutions of alkaline earth fluorides having novel luminescence properties, and to a process for preparing them. The invention is useful as identifying markers on articles. Other uses include phosphors for plasma displays, optical frequency multipliers, optical amplifiers and the like. | 2011-09-01 |
| 20110210292 | Gasification System And Process For Maximizing Production Of Syngas and Syngas-Derived Products - A gasification system and method. The system can include a gasifier and a purification unit fluidly coupled to the gasifier, with the purification unit receiving raw syngas from the gasifier and producing waste gas and a syngas product. The system can also include a first reformer fluidly coupled to the purification unit, with the first reformer receiving a first portion of the waste gas and producing reformed hydrocarbon. The system can further include a second reformer having a first inlet fluidly coupled to the purification unit, a second inlet fluidly coupled to the first reformer, and an outlet fluidly coupled to the purification unit. The second inlet can receive the reformed hydrocarbon from the first reformer, and the first inlet can receive a second portion of the waste gas from the purification unit. The second reformer can produce a recovered raw syngas that is directed to the purification unit. | 2011-09-01 |
| 20110210293 | Method for improving the electrochemical performances of an alkali metal oxyanion electrode material and alkali metal oxyanion electrode material obtained therefrom - Process for improving the electrochemical performance of an alkali metal oxyanion electrode material having a pyrolitic carbon deposit thereon, comprising a heat treatment under a humidified atmosphere where the heat treatment is performed at a temperature in the range of about 300° C. to about 950° C. | 2011-09-01 |
| 20110210294 | ELECTRICALLY CONDUCTING MICROPOROUS FRAMEWORKS - Electrically conducting vanadium arsenate or vanadium phosphate materials are described. The materials include a vanadium arsenate or vanadium phosphate framework structure about organic template and water molecules which may be removed to leave a microporous structure. The three-dimensional vanadium framework may provide electronic conductivity, while the extra-framework constituents may provide ionic conductivity. | 2011-09-01 |
| 20110210295 | Conductive silica sol composition, and molded article produced using the same - The present invention provides a conductive silica sol composition containing at least a silica sol composition, and at least one selected from perfluoroalkyl sulfonates perfluoroalkyl sulfone imide salts, and bis(fluorosulfonyl) imide salts. | 2011-09-01 |
| 20110210296 | SEMI-CONDUCTIVE RUBBER COMPOSITION AND VULCANIZATE THEREOF - The present invention provides a rubber composition, which realizes low hardness and low compression set while maintaining semi-conductivity, and a vulcanizate thereof. Also the rubber composition can be obtained by blending an epichlorohydrin-based rubber having satisfactory semi-conductivity and an acrylonitrile-butadiene-based rubber as a reactive plasticizer, and also blending zinc oxide, a thiuram-based compound and a quinoxaline-based compound. | 2011-09-01 |
| 20110210297 | INTEGRAL LOAD SUPPORT FOR A JACK FORMED OF A SHEET MATERIAL BENT TO LESS THAN 180 DEGREES - The invention relates to an integral load support ( | 2011-09-01 |
| 20110210298 | Post lift for vehicles - The post lift ( | 2011-09-01 |
| 20110210299 | Panel support post - Disclosed is an apparatus for supporting barrier panels to form a railing. The apparatus comprises a base securable to a mounting surface and a post extending substantially vertically from the base. The post has a first clamping surface thereon. The apparatus further comprises a clamping member having a second clamping surface thereon in opposed spaced apart relation to the first clamping surface, the clamping member being drawable towards the first clamping surface so as to clamp the barrier panel therebetween. The first and second clamping surfaces are located vertically spaced apart from the mounting surface so as to support the barrier panel vertically spaced apart from the mounting surface. | 2011-09-01 |
| 20110210300 | Reducing Temporal Changes in Phase Change Memories - A phase change memory in the reset state may be heated to reduce or eliminate electrical drift. | 2011-09-01 |
| 20110210301 | NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, a non-volatile semiconductor memory device includes: a semiconductor substrate; a plurality of first lines; a plurality of second lines; and a plurality of non-volatile memory cells arranged at positions where the plurality of first lines intersect with the plurality of second lines, wherein each of the plurality of non-volatile memory cells includes a resistance change element and a rectifying element connected in series to the resistance change element, and a resistance change film continuously extending over the plurality of second lines is arranged between the plurality of first lines and the plurality of second lines, and the resistance change element includes a portion where the first line intersect with the second line in the resistance change film. | 2011-09-01 |
| 20110210302 | SEMICONDUCTOR DEVICE - A semiconductor device includes a semiconductor substrate of a first conductivity type, a first insulating film region that is embedded in a trench formed on the semiconductor substrate, a gate electrode that covers a lower surface of the first insulating film region, and a gate insulating film that is provided between the gate electrode and the semiconductor substrate. The semiconductor device further includes a first diffusion region that covers a first side surface of the first insulating film region, a second diffusion region that covers a second side surface of the first insulating film region, and a third diffusion region that covers an upper surface of the second diffusion region. A selective element includes a field-effect transistor that is constituted by the gate electrode, the first diffusion region, and the second diffusion region, and a bipolar transistor that is constituted by the substrate and the second and third diffusion regions. | 2011-09-01 |
| 20110210303 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE - According to one embodiment, there is provided a nonvolatile semiconductor memory device including a first interconnection layer, memory cell modules each of which is formed by laminating a non-ohmic element layer with an MIM structure having an insulating film sandwiched between metal films and a variable resistance element layer, and a second interconnection layer formed on the memory cell modules, the insulating film of the non-ohmic element layer includes plural layers whose electron barriers and dielectric constants are different, or contains impurity atoms that form defect levels in the insulating film or contains semiconductor or metal dots. The nonvolatile semiconductor memory device using non-ohmic elements and variable resistance elements in which memory cells can be miniaturized and formed at low temperatures is realized by utilizing the above structures. | 2011-09-01 |
| 20110210304 | STORAGE DEVICE - According to the embodiment, a storage device includes row lines arranged parallel to one another, column lines arranged parallel to one another to intersect with the row lines, and a memory cell disposed at each of intersections of the row lines and the column lines and including a resistance-change element and a diode connected in series to the resistance-change element. The diode includes a stack of a first semiconductor region containing an impurity of a first conductivity type, a second semiconductor region containing an impurity of the first conductivity type lower in concentration than in the first semiconductor region, and a third semiconductor region containing an impurity of a second conductivity type. An impurity concentration in the second semiconductor region of the diode in a first adjacent portion adjacent to the first semiconductor region is higher than that in a second adjacent portion adjacent to the third semiconductor region. | 2011-09-01 |
| 20110210305 | METHOD TO PROGRAM A MEMORY CELL COMPRISING A CARBON NANOTUBE FABRIC ELEMENT AND A STEERING ELEMENT - A method of programming a carbon nanotube memory cell is provided, wherein the memory cell comprises a first conductor, a steering element, a carbon nanotube fabric, and a second conductor, wherein the steering element and the carbon nanotube fabric are arranged electrically in series between the first conductor and the second conductor, and wherein the entire carbon nanotube memory cell is formed above a substrate, the carbon nanotube fabric having a first resistivity, the method including applying a first electrical set pulse between the first conductor and the second conductor, wherein, after application of the first electrical set pulse, the carbon nanotube fabric has a second resistivity, the second resistivity less than the first resistivity. Other aspects are also provided. | 2011-09-01 |
| 20110210306 | MEMORY CELL THAT INCLUDES A CARBON-BASED MEMORY ELEMENT AND METHODS OF FORMING THE SAME - A method of forming a reversible resistance-switching metal-carbon-metal (“MCM”) device is provided, the device including a first conducting layer, a second conducting layer, and a reversible resistance-switching element disposed between the first and second conducting layers, wherein the reversible resistance-switching element includes thermal CVD graphitic material and includes a highly resistive region that favors crack formation. Other aspects are also provided. | 2011-09-01 |
| 20110210307 | CHEMICAL MECHANICAL POLISHING STOP LAYER FOR FULLY AMORPHOUS PHASE CHANGE MEMORY PORE CELL - A method for fabricating a phase change memory pore cell that includes forming a bottom electrode, forming a dielectric layer on the bottom electrode, and forming a sacrificial layer on the dielectric layer. The method further includes selectively etching portions of the sacrificial layer and the dielectric layer to define a pore extending through the sacrificial layer and the dielectric layer, depositing phase change material on the sacrificial layer and into the pore and removing the phase change material formed outside the pore, removing the sacrificial layer to expose the pore, the pore being vertically aligned, and forming a top electrode over the pore. | 2011-09-01 |
| 20110210308 | LAYERS AND PATTERNS OF NANOWIRE OR CARBON NANOTUBE USING CHEMICAL SELF ASSEMBLY AND FABRICATING METHOD IN LIQUID CRYSTAL DISPLAY DEVICE THEREBY - Disclosed are layers and patterns of nanowire or nanotube using a chemical self assembly for forming a semiconductor layer and a conductive layer of a thin film transistor by using a nanowire and/or nanotube solution and an diamine-based self-assembled monolayer (SAM) material. The Layers and patterns including layers and patterns of nanowire or nanotube using a chemical self assembly include: a substrate having a surface terminated with amine group (—NH | 2011-09-01 |
| 20110210309 | TUBULAR NANOSTRUCTURES, PROCESSES OF PREPARING SAME AND DEVICES MADE THEREFROM - Novel methods of producing single-walled and multi-walled, single-crystalline, tubular nanostructures, made of an inorganic substance (e.g., silicon), and single-walled and multi-walled, single-crystalline, tubular nanostructures produced thereby, are disclosed. Also disclosed are devices into which the nanostructures are integrated. The methods described herein are used to reproducibly and controllably producing single-crystalline nanostructures with well-defined shape, diameter and/or interwall distance, chemical composition and morphology. | 2011-09-01 |
| 20110210310 | Semiconductor light-emitting element - A semiconductor light-emitting element includes a semiconductor laminated body including a first conductivity type layer, a light-emitting layer and a second conductivity type layer in this order, a transparent electrode formed on the first conductivity type layer and comprising an oxide, and an auxiliary electrode formed between the first conductivity type layer and the transparent electrode, the auxiliary electrode having a higher reflectivity to light emitted from the light-emitting layer, a larger contact resistance with the first conductivity type layer and a smaller sheet resistance than the transparent electrode. | 2011-09-01 |
| 20110210311 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material. | 2011-09-01 |
| 20110210312 | III-NITRIDE SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor light-emitting device includes a substrate, a buffer layer, an n-type semiconductor layer, a conformational active layer and a p-type semiconductor layer. The n-type semiconductor layer includes a first surface and a second surface, and the first surface directly contacts the buffer layer. The second surface includes a plurality of recesses, and a conformational active layer formed on the second surface and within the plurality of recesses. Widths of upper portions of the recesses are larger than widths of lower portions of the recesses. Therefore, the stress between the n-type semiconductor layer and the conformational active layer can be released with the recesses. | 2011-09-01 |
| 20110210313 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor device, by which a multiple quantum well structure having a large number of pairs can be efficiently grown while maintaining good crystalline quality, and the semiconductor device, are provided. The semiconductor device manufacturing method of the present invention includes a step of forming a multiple quantum well structure | 2011-09-01 |
| 20110210314 | Graphene electronic device and method of fabricating the same - A graphene electronic device may include a silicon substrate, connecting lines on the silicon substrate, a first electrode and a second electrode on the silicon substrate, and an interlayer dielectric on the silicon substrate. The interlayer dielectric may be configured to cover the connecting lines and the first and second electrodes and the interlayer dielectric may be further configured to expose at least a portion of the first and second electrodes. The graphene electronic device may further include an insulating layer on the interlayer dielectric and a graphene layer on the insulating layer, the graphene layer having a first end and a second end. The first end of the graphene layer may be connected to the first electrode and the second end of the graphene layer may be connected to the second electrode. | 2011-09-01 |
| 20110210315 | NOVEL DONOR-ACCEPTOR FLUORENE SCAFFOLDS: A PROCESS AND USES THEREOF - The present invention relates to novel donor-acceptor fluorene compounds, which can be used as for the fabrication of electroluminescent devices, and a process of preparing said novel compounds. More particularly, the present invention relates to amine donor and nitrile/ester acceptor fluorenes, fluorenones their π-conjugated systems and related compounds, processes for preparing the said compounds including oxidation of fluorenes to corresponding fluorenones and their use in preparing organic electronic devices such as organic light emitting diodes (OLEDs), photovoltaic/solar cell, Field effect transistors and other useful electroluminescent devices. The compounds are prepared by reacting 2H-pyran-2-ones in isolated or rigid conformations with cyclic ketones containing methylene carbonyl moiety in the presence of a base in an organic solvent. The present invention also relates to a new concept and approach to overcome the problem of ‘Green emission defect’ in 9-unsubstituted fluorene-based organic light emitting diodes which occurs due to the conversion of fluorenes to fluorenones that show emission mainly in green-yellow region. In the present invention we have placed donor-acceptor substituents in such a way that donor-acceptor fluorenones show emission in the blue region (instead of green-yellow region) thus improving the blue colour purity and overcoming the problem of green emission defect. | 2011-09-01 |
| 20110210316 | HETEROCYCLIC COMPOUND, LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - An object is to provide a novel heterocyclic compound which can be used for a light-emitting element, as a host material of a light-emitting layer in which a light-emitting substance is dispersed. Other objects are to provide a light-emitting element having low driving voltage, a light-emitting element having high current efficiency, and a light-emitting element having a long lifetime. Provided are a light-emitting element including a compound in which a dibenzo[f,h]quinoxaline ring and a hole-transport skeleton are bonded through an arylene group, and a light-emitting device, an electronic device, and a lighting device each using this light-emitting element. The heterocyclic compound represented by General Formula (G1) below is provided. | 2011-09-01 |
| 20110210317 | TOP EMISSION ORGANIC LIGHT EMITTING DEVICE - A top emission organic light emitting device including a metal reflective layer, a first electrode, a first intermediate layer including a charge-transfer complex, a second intermediate layer including a fullerene-based material or a fluorine-containing compound, an emission layer, and a second electrode. | 2011-09-01 |
| 20110210318 | MATERIAL FOR ORGANIC ELECTRONIC DEVICE, AND ORGANIC ELECTRONIC DEVICE USING SAME - The present invention provides a novel compound that is capable of largely improving a life time, efficiency, electrochemical stability, and thermal stability of an organic electronic device, and an organic electronic device that comprises an organic material layer comprising the compound. | 2011-09-01 |
| 20110210319 | COMPOUND FOR ORGANIC THIN FILM TRANSISTOR AND ORGANIC THIN FILM TRANSISTOR USING THE SAME - A compound for an organic thin film transistor represented by the following formula ( | 2011-09-01 |
| 20110210320 | ANTHRACENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING THE SAME - The present invention relates to an anthracene derivative and an organic electroluminescent device using the same. More specifically, the present invention relates to: a novel compound which has a core (for example, an indenoanthracene core) where both an anthracene moiety with excellent device characteristics and a fluorene moiety with excellent fluorescent properties are fused, wherein substituents (for example, a heterocyclic group such as a benzimidazole group, a benzothiazole group, a benzoxazole group, a pyridinyl group or a bipyridinyl group) with an electron transfer capacity are substituted to the core; and an organic electroluminescence element which has improved luminous efficiency, brightness, thermal stability, driving voltage, and lifetime, by comprising an organic layer which is positioned between a positive electrode and negative electrode and contains the novel compound. | 2011-09-01 |
| 20110210321 | TRANSPARENT POLYMERIC ELECTRODES FOR ELECTRO-OPTICAL STRUCTURES, PROCESS FOR PRODUCING THE SAME, AND DISPERSIONS USED IN SUCH PROCESSES - The invention concerns a process for producing transparent multi-layer electrodes from conductive polymers, electrodes produced by this process and their use in electro-optical structures. | 2011-09-01 |
| 20110210322 | POLYMER COMPOUND CONTAINING NITROGEN-CONTAINING HETEROCYCLIC STRUCTURE, AND COMPOSITION, SOLUTION, THIN FILM AND POLYMER LIGHT-EMITTING ELEMENT EACH CONTAINING SAME - A polymer compound having a repeating unit represented by formula (1-0): | 2011-09-01 |
| 20110210323 | ORGANIC ELECTROLUMINESCENT ELEMENT AND DISPLAY DEVICE - An organic electroluminescent element, in which reduction in drive voltage is achieved, is provided. The organic electroluminescent element has an organic layer | 2011-09-01 |
| 20110210324 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object to provide a light-emitting device in which plural kinds of circuits are formed over one substrate and plural kinds of thin film transistors corresponding to characteristics of the plural kinds of circuits are provided. An inverted coplanar thin film transistor in which an oxide semiconductor layer overlaps with a source electrode layer and a drain electrode layer is used for a pixel, and a channel-etched thin film transistor is used for a driver circuit. A color filter layer is provided between the pixel thin film transistor and a light-emitting element which is electrically connected to the pixel thin film transistor so as to overlap with the light-emitting element. | 2011-09-01 |
| 20110210325 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The semiconductor device includes a driver circuit portion including a driver circuit and a pixel portion including a pixel. The pixel includes a gate electrode layer having a light-transmitting property, a gate insulating layer, a source electrode layer and a drain electrode layer each having a light-transmitting property provided over the gate insulating layer, an oxide semiconductor layer covering top surfaces and side surfaces of the source electrode layer and the drain electrode layer and provided over the gate electrode layer with the gate insulating layer therebetween, a conductive layer provided over part of the oxide semiconductor layer and having a lower resistance than the source electrode layer and the drain electrode layer, and an oxide insulating layer in contact with part of the oxide semiconductor layer. | 2011-09-01 |
| 20110210326 | SEMICONDUCTOR DEVICE - A semiconductor device includes an oxide semiconductor layer, a source electrode and a drain electrode in contact with the oxide semiconductor layer, a gate electrode overlapping with the oxide semiconductor layer, and a gate insulating layer between the oxide semiconductor layer and the gate electrode, in which the source electrode or the drain electrode comprises a first conductive layer and a second conductive layer having a region which extends beyond an end portion of the first conductive layer in a channel length direction and which overlaps with part of the gate electrode, in which a sidewall insulating layer is provided over the extended region of the second conductive layer, and in which the sidewall insulating layer comprises a stack of a plurality of different material layers. | 2011-09-01 |
| 20110210327 | LIQUID CRYSTAL DISPLAY DEVICE - An object is to reduce parasitic capacitance of a signal line included in a liquid crystal display device. A transistor including an oxide semiconductor layer is used as a transistor provided in each pixel. Note that the oxide semiconductor layer is an oxide semiconductor layer which is highly purified by thoroughly removing impurities (hydrogen, water, or the like) which become electron suppliers (donors). Thus, the amount of leakage current (off-state current) can be reduced when the transistor is off. Therefore, a voltage applied to a liquid crystal element can be held without providing a capacitor in each pixel. In addition, a capacitor wiring extending to a pixel portion of the liquid crystal display device can be eliminated. Therefore, parasitic capacitance in a region where the signal line and the capacitor wiring intersect with each other can be eliminated. | 2011-09-01 |
| 20110210328 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device which includes a thin film transistor having an oxide semiconductor layer and excellent electrical characteristics is provided. Further, a method for manufacturing a semiconductor device in which plural kinds of thin film transistors of different structures are formed over one substrate to form plural kinds of circuits and in which the number of steps is not greatly increased is provided. After a metal thin film is formed over an insulating surface, an oxide semiconductor layer is formed thereover. Then, oxidation treatment such as heat treatment is performed to oxidize the metal thin film partly or entirely. Further, structures of thin film transistors are different between a circuit in which emphasis is placed on the speed of operation, such as a logic circuit, and a matrix circuit. | 2011-09-01 |
| 20110210329 | Apparatus and method for predetermined component placement to a target platform - The present invention relates generally to assembly techniques. According to the present invention, the alignment and probing techniques to improve the accuracy of component placement in assembly are described. More particularly, the invention includes methods and structures to detect and improve the component placement accuracy on a target platform by incorporating alignment marks on component and reference marks on target platform under various probing techniques. A set of sensors grouped in any array to form a multiple-sensor probe can detect the deviation of displaced components in assembly. | 2011-09-01 |
| 20110210330 | LIGHT EMITTING DIODE AND METHOD OF MAKING THE SAME - A light emitting diode (LED) and a method of making the same are disclosed. The present invention uses a metal layer of high conductivity and high reflectivity to prevent the substrate from absorbing the light emitted. This invention also uses the bonding technology of dielectric material thin film to replace the substrate of epitaxial growth with high thermal conductivity substrate to enhance the heat dissipation of the chip, thereby increasing the performance stability of the LED, and making the LED applicable under higher current. | 2011-09-01 |
| 20110210331 | DRIVING TRANSISTOR OF ORGANIC LIGHT-EMITTING, METHOD FOR FABRICATING THE TRANSISTOR, AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE TRANSISTOR - A driving TFT for an organic light-emitting display device includes a gate electrode on a portion of a substrate, a gate insulation layer on an entire surface of the substrate including the gate electrode, a semiconductor layer on the gate insulation layer and covering the gate electrode, the semiconductor layer including an n-type impurity layer, and source and drain electrodes overlapping portions of the semiconductor layer at respective sides thereof. | 2011-09-01 |
| 20110210332 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - It is an object to provide a display device of which image display can be favorably recognized. Another object is to provide a manufacturing method of the display device with high productivity. Over a substrate, a pixel electrode that reflects incident light through a liquid crystal layer, a light-transmitting pixel electrode, and a structure whose side surface is covered with a reflective layer and which is positioned to overlap with the light-transmitting pixel electrode are provided. The structure is formed over a light-transmitting etching-stop layer, and the etching-stop layer remains below the structure as a light-transmitting layer. | 2011-09-01 |
| 20110210333 | Semiconductor Device - To realize a semiconductor device including a capacitor element capable of obtaining a sufficient capacitor without reducing an opening ratio, in which a pixel electrode is flattened in order to control a defect in orientation of liquid crystal. A semiconductor device of the present invention includes a light-shielding film formed on the thin film transistor, a capacitor insulating film formed on the light-shielding film, a conductive layer formed on the capacitor insulating film, and a pixel electrode that is formed so as to be electrically connected to the conductive layer, in which a storage capacitor element comprises the light-shielding film, the capacitor insulating film, and the conductive layer, whereby an area of a region serving as the capacitor element can be increased. | 2011-09-01 |
| 20110210334 | ELECTRONIC DEVICE, SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention provides a manufacturing process using a droplet-discharging method that is suitable for manufacturing a large substrate in mass production. A photosensitive material solution of a conductive film is selectively discharged by a droplet-discharging method, selectively exposed to laser light, and developed or etched, thereby allowing only the region exposed to laser light to be left and realizing a source wiring and a drain wiring having a more microscopic pattern than the pattern itself formed by discharging. One feature of the source wiring and the drain wiring is that the source wiring and the drain wiring cross an island-like semiconductor layer and overlap it. | 2011-09-01 |
| 20110210335 | Display Device and Method for Manufacturing the Same - An object of the present invention is to decrease substantial resistance of an electrode such as a transparent electrode or a wiring, and furthermore, to provide a display device for which is possible to apply same voltage to light-emitting elements. In the invention, a auxiliary wiring that is formed in one layer in which a conductive film of a semiconductor element such as an electrode, wiring, a signal line, a scanning line, or a power supply line is connected to an electrode typified by a second electrode, and a wiring. It is preferable that the auxiliary wiring is formed into a conductive film to include low resistive material, especially, formed to include lower resistive material than the resistance of an electrode and a wiring that is required to reduce the resistance. | 2011-09-01 |
| 20110210336 | Semiconductor Device and Fabrication Method Thereof - For forming a gate electrode, a conductive film with low resistance including Al or a material containing Al as its main component and a conductive film with low contact resistance for preventing diffusion of Al into a semiconductor layer are laminated, and the gate electrode is fabricated by using an apparatus which is capable of performing etching treatment at high speed. | 2011-09-01 |
| 20110210337 | Monolithic integration of silicon and group III-V devices - Disclosed is a monolithically integrated silicon and group III-V device that includes a group III-V transistor formed in a III-V semiconductor body disposed over a silicon substrate. At least one via extends through the III-V semiconductor body to couple at least one terminal of the group III-V transistor to a silicon device formed in the silicon substrate. The silicon device can be a Schottky diode, and the group III-V transistor can be a GaN HEMT. In one embodiment an anode of the Schottky diode is formed in the silicon substrate. In another embodiment, the anode of the Schottky diode is formed in a lightly doped epitaxial silicon layer atop the silicon substrate. In one embodiment a parallel combination of the Schottky diode and the group III-V transistor is formed, while in another embodiment is series combination is formed. | 2011-09-01 |
| 20110210338 | Efficient High Voltage Switching Circuits and Monolithic Integration of Same - A high voltage switching circuit includes first and second group III-V transistors, the second group III-V transistor having a greater breakdown voltage than the first group III-V transistor. The circuit further includes a silicon diode in a parallel arrangement with the first group III-V transistor, the parallel arrangement being in cascade with the second group III-V transistor. The circuit is effectively a three-terminal device, where a first terminal is coupled to a gate of the second III-V transistor, a source of the first III-V transistor, and an anode of the silicon diode. A second terminal is coupled to a gate of the first group III-V transistor, and a third terminal is coupled to a drain of the second group III-V transistor. The first group III-V transistor might be an enhancement mode transistor. The second group III-V transistor might be a depletion mode transistor. The first and second group III-V transistors can be GaN HEMTs. | 2011-09-01 |
| 20110210339 | SEMICONDUCTOR DEVICE - A semiconductor device including a non-volatile memory cell including a writing transistor which includes an oxide semiconductor, a reading transistor which includes a semiconductor material different from that of the writing transistor, and a capacitor is provided. Data is written or rewritten to the memory cell by turning on the writing transistor and supplying a potential to a node where a source electrode (or a drain electrode) of the writing transistor, one electrode of the capacitor, and a gate electrode of the reading transistor are electrically connected to each other, and then turning off the writing transistor so that the predetermined amount of charge is held in the node. Further, when a transistor whose threshold voltage is controlled and set to a positive voltage is used as the reading transistor, a reading potential is a positive potential. | 2011-09-01 |
| 20110210340 | HIGH TEMPERATURE GATE DRIVERS FOR WIDE BANDGAP SEMICONDUCTOR POWER JFETS AND INTEGRATED CIRCUITS INCLUDING THE SAME - Gate drivers for wide bandgap (e.g., >2 eV) semiconductor junction field effect transistors (JFETs) capable of operating in high ambient temperature environments are described. The wide bandgap (WBG) semiconductor devices include silicon carbide (SiC) and gallium nitride (GaN) devices. The driver can be a non-inverting gate driver which has an input, an output, a first reference line for receiving a first supply voltage, a second reference line for receiving a second supply voltage, a ground terminal, and six Junction Field-Effect Transistors (JFETs) wherein the first JFET and the second JFET form a first inverting buffer, the third JFET and the fourth JFET form a second inverting buffer, and the fifth JFET and the sixth JFET form a totem pole which can be used to drive a high temperature power SiC JFET. An inverting gate driver is also described. | 2011-09-01 |
| 20110210341 | P-TYPE SiC SEMICONDUCTOR - A p-type SiC semiconductor includes a SiC crystal that contains Al and Ti as impurities, wherein the atom number concentration of Ti is equal to or less than the atom number concentration of Al. It is preferable that the concentration of Al and the concentration of Ti satisfy the following relations: (Concentration of Al)≧5×10 | 2011-09-01 |
| 20110210342 | SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE - A SiC substrate includes a first orientation flat parallel to the <11-20> direction, and a second orientation flat being in a direction intersecting the first orientation flat and being different from the first orientation flat in length. An alternative SiC substrate has a rectangular plane shape, and a main surface of the substrate includes a first side parallel to the <11-20> direction, a second side in a direction perpendicular to the first side, and a third side connecting the first side to the second side. A length of the third side projected in a direction in which the first side extends is different from a length of the third side projected in a direction in which the second side extends. | 2011-09-01 |
| 20110210343 | SEMICONDUCTOR WAFER - A semiconductor wafer includes a substrate, a first separating structure and a semiconductor stacked layer structure. The substrate has a first surface. The first separating structure is formed on the first surface to divide the first surface into a plurality of independent regions. The minimum area of each of the regions is more than or equal to one square inch. The semiconductor stacked layer structure is disposed on the first surface and the first separating structure. The semiconductor wafer can prevent bowing of the semiconductor wafer during an epitaxial growth process so as to enhance quality of the semiconductor wafer. | 2011-09-01 |
| 20110210344 | BARRIER FILM COMPOSITE, DISPLAY APPARATUS INCLUDING THE BARRIER FILM COMPOSITE, AND METHOD OF MANUFACTURING DISPLAY APPARATUS INCLUDING THE BARRIER FILM COMPOSITE - A barrier film composite includes a heat-shrinkable layer having a conformable surface conforming to a surface shape of an object in contact with the heat-shrinkable layer, and a flat surface disposed opposite to the conformable surface; and a barrier layer having a smaller thickness than the heat-shrinkable layer and disposed flat on the flat surface of the heat-shrinkable layer. | 2011-09-01 |
| 20110210345 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device includes a light emitting structure layer comprising a first conductive type semiconductor layer, an active layer, and a second conductive type semiconductor layer, a first electrode connected to the first conductive type semiconductor layer, a current spreading layer on the second conductive type semiconductor layer, an insulation layer on the first electrode, and a second electrode comprising at least one bridge portion on the insulation layer and a first contact portion contacting at least one of the second conductive type semiconductor layer and the current spreading layer. | 2011-09-01 |
| 20110210346 | LED MODULE - An LED module includes at least two LED package units and at least one connecting unit. Each LED package unit includes at least one first engaging portion, at least one first conductive portion, and at least one LED chip connected electrically to the first engaging portion. The connecting unit includes at least two second engaging portions, and at least one second conductive portion having two opposite end sections extending respectively to the second engaging portions. When the second engaging portions of the connecting unit engaged with the first engaging portions of the LED package units, respectively, the end sections of the second conductive portion contact electrically and respectively the corresponding first conductive portions so as to connect electrically the LED chips of the LED package units. | 2011-09-01 |
| 20110210347 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device including: a thin film transistor substrate; and a driving circuit, wherein the thin film transistor substrate includes: a thin film transistor includes: a gate electrode; a gate insulating film that is formed on the insulating substrate and the gate electrode; a semiconductor layer that is formed on the gate insulating film; a channel protecting film; and a source electrode and a drain electrode that are formed to connect with the semiconductor layer; and a wiring converting unit that directly and electrically connects a first wiring layer and a second wiring layer through a first contact hole formed in the gate insulating film in the driving circuit, wherein the first wiring layer is formed at the same layer as the gate electrode on the insulating substrate; and wherein the second wiring layer is formed at the same layer as the source electrode and the drain electrode. | 2011-09-01 |
| 20110210348 | ORGANIC LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic EL device includes a first substrate and a plurality of organic EL elements above a first portion of the first substrate. A first inorganic layer covers the plurality of organic EL elements. An active layer is above a second portion of the first substrate that is different than the first portion. The active layer comprises a material that is at least one of hygroscopic and oxidizable. A second inorganic layer covers the active layer. A second substrate is opposite the first substrate, with the plurality of organic EL elements being between the first and second substrates. A seal extends between the first and second substrates to define a sealed space between the first and second substrates. The second inorganic layer includes through-holes that expose the active layer to the sealed space that is defined by the first substrate, the second substrate, and the seal. | 2011-09-01 |
| 20110210349 | LED MULTI-CHIP BONDING DIE AND LIGHT STRIP USING THE SAME - An LED multi-chip bonding die ( | 2011-09-01 |
| 20110210350 | LIGHT EMITTING ELEMENT WITH A PLURALITY OF CELLS BONDED, METHOD OF MANUFACTURING THE SAME, AND LIGHT EMITTING DEVICE USING THE SAME - The present invention relates to a light emitting element with arrayed cells, a method of manufacturing the same, and a light emitting device using the same. The present invention provides a light emitting element including a light emitting cell block with a plurality of light emitting cells connected in series or parallel on a single substrate, and a method of manufacturing the same, wherein each of the plurality of light emitting cells includes an N-type semiconductor layer and a P-type semiconductor layer, and the N-type semiconductor layer of one light emitting cell is electrically connected to the P-type semiconductor layer of another adjacent light emitting cell. Further, the present invention provides a light emitting device including a light emitting element with a plurality of light emitting cells connected in series. Accordingly, it is possible to simplify a manufacturing process of a light emitting device for illumination capable of being used with a household AC power source, to decrease a fraction defective occurring in manufacturing a light emitting device for illumination, and to mass-produce the light emitting device for illumination. Further, there is an advantage in that DC driving efficiency can be enhanced in an AC operation by installing a predetermined rectifying circuit outside the light emitting element. | 2011-09-01 |
| 20110210351 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY AND METHOD FOR MANUFACTURING THE SAME - A semiconductor light emitting device includes: a substrate; a plurality of light emitting cells arranged on the substrate, each of the light emitting cells including a first-conductivity-type semiconductor layer, a second-conductivity-type semiconductor layer, and an active layer disposed therebetween to emit blue light; an interconnection structure electrically connecting at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of the light emitting cell to at least one of the first-conductivity-type semiconductor layer and the second-conductivity-type semiconductor layer of another light emitting cell; and a light conversion part formed in at least a portion of a light emitting region defined by the plurality of light emitting cells, the light conversion part including at least one of a red light conversion part having a red light conversion material and a green light conversion part having a green light conversion material. | 2011-09-01 |
| 20110210352 | SEMICONDUCTOR LIGHT EMITTING DEVICE HAVING MULTI-CELL ARRAY, LIGHT EMITTING MODULE, AND ILLUMINATION APPARATUS - A semiconductor light emitting device includes a substrate; a plurality of light emitting cells disposed on the top surface of the substrate, the light emitting cells each having an active layer; a plurality of connection parts formed on the substrate with the light emitting cells formed thereon to connect the light emitting cells in a parallel or series-parallel configuration; and an insulation layer formed on the surface of the light emitting cell to prevent an undesired connection between the connection parts and the light emitting cell. The light emitting cells comprise at least one defective light emitting cell, and at least one of the connection parts related to the defective light emitting cell is disconnected. | 2011-09-01 |
| 20110210353 | LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MANUFACTURING - Light emitting diodes (“LEDs”) with N-polarity and associated methods of manufacturing are disclosed herein. In one embodiment, a method for forming a light emitting diode on a substrate having a substrate material includes forming a nitrogen-rich environment at least proximate a surface of the substrate without forming a nitrodizing product of the substrate material on the surface of the substrate. The method also includes forming an LED structure with a nitrogen polarity on the surface of the substrate with a nitrogen-rich environment. | 2011-09-01 |
| 20110210354 | LIGHT EMITTING DEVICE, RESIN PACKAGE, RESIN-MOLDED BODY, AND METHODS FOR MANUFACTURING LIGHT EMITTING DEVICE, RESIN PACKAGE AND RESIN-MOLDED BODY - Provided is a simple and low-cost method for manufacturing, in a short time, many light emitting devices wherein adhesiveness between a leadframe and a thermosetting resin composition is high. The method for manufacturing the light emitting device having a resin package ( | 2011-09-01 |
| 20110210355 | LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is to improve reliability of a light-emitting device. A light-emitting device has a driver circuit portion including a transistor for a driver circuit and a pixel portion including a transistor for a pixel over one substrate. The transistor for the driver circuit and the transistor for the pixel are inverted staggered transistors each including an oxide semiconductor layer in contact with part of an oxide insulating layer. In the pixel portion, a color filter layer and a light-emitting element are provided over the oxide insulating layer. In the transistor for the driver circuit, a conductive layer overlapping with a gate electrode layer and the oxide semiconductor layer is provided over the oxide insulating layer. The gate electrode layer, a source electrode layer, and a drain electrode layer are formed using metal conductive films. | 2011-09-01 |
| 20110210356 | SEMICONDUCTOR PACKAGE AND FABRICATION METHOD THEREOF - A light emitting element package includes a substrate, a reflection layer, at least one light emitting element, at least two conductive layers, a plurality of metal pins and an encapsulation layer. The reflection layer is formed on the substrate. The at least one light emitting element is mounted on the reflection layer on the substrate. The at least two conductive layers are electrically coupled to the at least one light emitting element. The metal pins electrically couple to the at least two conductive layers. The encapsulation layer is mounted on the substrate for encapsulating the at least one light emitting element. | 2011-09-01 |
| 20110210357 | Optoelectronic Component and Method for the Production Thereof - A method of producing an optoelectronic component, comprising the method steps: A) providing a growth substrate ( | 2011-09-01 |
| 20110210358 | WAVELENGTH-CONVERTING LIGHT EMITTING DIODE (LED) CHIP AND LED DEVICE EQUIPPED WITH CHIP - A wavelength-converted light emitting diode (LED) chip is provided. The wavelength-converted LED chip includes an LED chip and a wavelength-converted layer. The LED chip emits light in a predetermined wavelength region. The wavelength-converted layer is formed of a resin containing phosphor bodies of at least one kind which convert a portion of the light emitted from the LED chip into light in a different wavelength region. The wavelength-converted layer is formed on an upper surface of the LED chip, and has a convex meniscus-shaped upper surface. | 2011-09-01 |
| 20110210359 | LIGHT EMITTING DEVICE, METHOD OF MANUFACTURING THE LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING UNIT - Provided are a light emitting device, a method for fabricating the light emitting device, a light emitting device package, and a lighting unit. The light emitting device includes a conductive support substrate, a protection layer on the conductive support substrate, the protection layer having an inclined top surface, a light emitting structure layer including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer on the conductive support substrate and the protection layer, and an electrode on the light emitting structure layer. A portion of the protection layer is disposed between the conductive support substrate and the light emitting structure layer. | 2011-09-01 |
| 20110210360 | TRANSMISSIVE OPTICAL ELEMENTS INCLUDING PHOSPHOR PATTERNS THEREIN - A transmissive optical element includes a transparent plastic member, such as a shell or a dome-shaped shell, including a phosphor pattern dispersed therein that can produce an indicia. The transmissive optical element may be combined with a semiconductor light emitting device, a mounting substrate, an encapsulant and inner and/or outer coatings. | 2011-09-01 |
| 20110210361 | HIGH EFFICIENT PHOSPHOR-CONVERTED LIGHT EMITTING DIODE - A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer. | 2011-09-01 |
