34th week of 2009 patent applcation highlights part 40 |
Patent application number | Title | Published |
20090209000 | Genetically Programmed Expression of Proteins - The invention relates to orthogonal pairs of tRNAs and aminoacyl-tRNA synthetases that can incorporate the unnatural amino acid phenylselenocysteine into proteins produced in eubacterial host cells such as | 2009-08-20 |
20090209001 | 2-Deoxy-D-Ribose 5-Phosphate Aldolases (DERAS) And Uses Thereof - The invention relates to isolated mutants of enzymes from the group of 2-deoxy-D-ribose 5-phosphate aldolase wild-type enzymes having a productivity factor (as determined by a specific test) which is at least 10% higher than the productivity factor for the corresponding wild-type enzyme from which it is a mutant. The mutants have at least one amino acid substitution at one or more of the positions corresponding to K13, T19, Y49, N80, D84, A93, E127, A128, K146, K160, I166, A174, M185, K196, F200, and S239 in | 2009-08-20 |
20090209002 | COMPOSITIONS AND METHODS RELATING TO CELLULAR TARGETING - Plasmodesmal resident components are identified, characterized and isolated. Compositions comprising these components are described and methods of use thereof for plasmodesmal flux modulation and targeting are enabled. In a first embodiment, a novel plasmodesmal receptor-like protein, referred to herein as pldp1, reveals signals sufficient for targeting to plasmodesmata via the secretory pathway. In the second embodiment a novel plasmodesmal protein that is anchor into the external face of the plasma membrane and binds to callose is provided. | 2009-08-20 |
20090209003 | MUTANT PCNA - The present invention is to construct a DNA replication reaction system which is excellent in versatility and is easily used. An amino acid sequence of a PCNA monomer which is one of factors involved in DNA replication is prepared so that amino acid residues causing mutual charge repulsion constitute a site which causes, when an N terminal region of the PCNA monomer and a C terminal region of another PCNA monomer act as an interface to form a multimeric complex, an intermolecular interaction of the monomers in an interface region of the monomers. | 2009-08-20 |
20090209004 | HUMAN IL-1 BETA ANTAGONISTS - The present invention encompasses isolated antibodies, or antigen-binding portions thereof, that specifically bind mature human IL-1 Beta. These antibodies, or antigen-binding portions thereof, generally exhibit high binding affinities (low k | 2009-08-20 |
20090209005 | Chimeric dna polymerase - The present invention provides a chimeric thermostable DNA polymerase that includes a region from a Tth DNA polymerase I, a region from a Taq DNA polymerase I and a DNA polymerase domain. The DNA polymerase domain comprises a portion of a DNA polymerase domain from the Tth DNA polymerase I operably linked to a portion of a DNA polymerase domain from the Taq DNA polymerase I. Also provided are a nucleic acid sequence and an amino acid sequence of the chimeric thermostable enzyme of the invention. The chimeric DNA polymerase enzyme of the invention is useful in DNA amplification reactions such as the polymerase chain reaction. | 2009-08-20 |
20090209006 | TACI-IMMUNOGLOBULIN FUSION PROTEINS - Molecules that interfere with the binding of a tumor necrosis factor receptor with its ligand, such as a soluble receptor, have proven usefulness in both basic research and as therapeutics. The present invention provides improved soluble transmembrane activator and calcium modulator and cyclophilin ligand-interactor (TACI) receptors. | 2009-08-20 |
20090209007 | Method of Expression Cloning in a Host Cell - The invention relates to a promoter DNA sequence highly suited in an improved expression cloning method for isolation of DNA sequences comprising a DNA sequence encoding a protein of interest in a host cell and to the improved expression cloning method wherein use is made of this promoter. The isolated DNA sequences are useful in processes for producing a protein of interest. | 2009-08-20 |
20090209008 | THERMUS THERMOPHILUS NUCLEIC ACID POLYMERASES - The invention provides novel nucleic acid polymerases from strains GK24 and RQ-1 of | 2009-08-20 |
20090209009 | ENZYME COMPOSITIONS FOR THE IMPROVED ENZYMATIC HYDROLYSIS OF CELLULOSE AND METHODS OF USING SAME - A process for the enzymatic hydrolysis of cellulose to produce a hydrolysis product comprising glucose from a pretreated lignocellulosic feedstock and enzymes for use in the process are provided. The process comprises hydrolyzing an aqueous slurry of a pretreated lignocellulosic feedstock with cellulase enzymes, one or more than one β-glucosidase enzyme and a binding agent for binding the β-glucosidase enzyme to fiber solids present in the aqueous slurry. During the hydrolysis, both the cellulase enzyme and β-glucosidase enzyme bind to the fiber solids. The hydrolysis is performed in a solids-retaining hydrolysis reactor so that unhydrolyzed fiber solids and bound enzyme are retained in the reactor longer than the aqueous phase of the slurry. | 2009-08-20 |
20090209010 | METHODS AND SYSTEMS FOR SELECTIVE FLUORINATION OF ORGANIC MOLECULES - A method and system for selectively fluorinating organic molecules on a target site wherein the target site is activated and then fluorinated are shown together with a method and system for identifying a molecule having a biological activity. | 2009-08-20 |
20090209011 | Method for Producing an L-Amino Acid Using a Bacterium of the Enterobacteriaceae Family With Enhanced Expression of the fucPIKUR Operon - The present invention provides a method for producing an L-amino acid using a bacterium of the Enterobacteriaceae family, particularly a bacterium belonging to the genus | 2009-08-20 |
20090209012 | Method for producing l-amino acids - Disclosed is a process for producing the L-form of an amino acid enzymatically from an enantiomeric mixture of the amino acid. The process includes the step of contacting a transformant or a treated product thereof with an enantiomeric mixture of the amino acid. The transformant includes a single host and one or more recombinant vectors introduced thereinto, in which the one or more recombinant vectors include one or more expression vectors and nucleotide sequences integrated thereinto respectively, and the nucleotide sequences are a nucleotide sequence encoding an enzyme capable of converting the D-form of an amino acid into a keto acid and a nucleotide sequence encoding an enzyme capable of converting a keto acid into the L-form of an amino acid. According to this process, a reaction for converting the D-form of an amino acid into a keto acid and a reaction for converting the keto acid into the L-form of the amino acid can be conducted in a single step. Disclosed also is a transformant capable of converting into the L-form of an amino acid as accumulated in a high concentration. The L-form of an amino acid can be efficiently produced from an inexpensive starting material by using the transformant. | 2009-08-20 |
20090209013 | Burkholderia rhizoxina micro-organisms, novel endosymbionts of rhizopus sp. and method for producing rhizoxin and/or rhizoxin-derivates using said micro-organisms - The invention relates to a method for producing rhizoxin and derivates of rhizoxin. | 2009-08-20 |
20090209014 | HETEROTROPHIC ALGAL HIGH CELL DENSITY PRODUCTION METHOD AND SYSTEM - A multiphase culturing process for high density heterotrophic microalgal growth uses crude glycerol as the primary carbon source and produces ω-3 fatty acids. The process uses multiphase growth conditions that decouple the phases of increasing cell density and increasing cell size and fatty acid production. The entire process is integrated with biodiesel production. | 2009-08-20 |
20090209015 | COMPOSITIONS AND METHODS FOR PRODUCTION OF BIOFUELS - Provided is a method for producing C4 to C14 fatty acids. The method entails providing genetically modified cells that express a heterologous animal TE-II and either a heterologous animal wild type FAS or a ΔTE-I-FAS. The TE-II and the heterologous wild-type or ΔTE-I-FAS are expressed as distinct molecules. The cells are cultured for a period of time, and the fatty acids are extracted either as free fatty acids or as glycerides from the cells and/or from the media in which the cells are cultured. | 2009-08-20 |
20090209016 | Engineering Fungi for the Utilisation of L-Arabinose - A fungal microorganism can be engineered by means of genetic engineering to utilise L-arabinose. The genes of the L-arabinose pathway, which were unknown, i.e. L-arabinitol 4-dehydrogenase and L-xylulose reductase, were identified. These genes, together with the known genes of the L-arabinose pathway, form a functional pathway. This pathway can be introduced to a fungus, which is completely or partially lacking this pathway. | 2009-08-20 |
20090209017 | Electroporation Cuvette With Spatially Variable Electric Field - An electroporation cuvette is constructed with electroporation electrodes arranged in non-parallel relation to form a gap whose width varies with the location within the cuvette, plus a pair of positioning electrodes that are arranged to cause electrophoretic migration of biological cells within the cuvette according to cell size. Once the cells, suspended in a solution of the impregnant, are distributed in the cuvette by the positioning electrodes, electric field pulses are generated by the non-parallel electroporation electrodes. Because of their distribution in the cuvette, the various cells will experience voltage differentials across their widths that approach uniformity regardless of cell diameter, since the larger cells will be positioned at locations where the gap between the electrodes is greater and the smaller cells at locations where the gap is relatively small while the voltage drop across the entire gap is uniform along the length of the cell. The voltage differential across the width of the cell is thus roughly paired with the cell diameter, and this reduces the disparity in voltage differential that cells of different sizes would otherwise experience with parallel electrodes. | 2009-08-20 |
20090209018 | Catalase decomposition of hydrogen peroxide in surfactants - A process comprising the steps of continuously adding a catalase enzyme to a process stream, wherein the process stream comprises an amine oxide surfactant and hydrogen peroxide; and mixing the process stream and catalase enzyme. | 2009-08-20 |
20090209019 | Bioartificial Renal Tubule - A bioartificial renal tubule is provided that forms an artificial kidney together with a bioartificial glomerulus suitable for continuous hemofiltration. The bioartificial renal tubule includes an artificial membrane having an inner surface coated with renal tubular epithelial cells and a vessel containing the artificial membrane. The cells are prevented by the use of a MEK inhibitor from being stratified and therefore form a confluent monolayer on the artificial membrane. The renal tubular epithelial cells are characterized in that the contact inhibition thereof is maintained by the use of the MEK inhibitor. The MEK inhibitor is preferably U0126. The attachment of cells capable of reproducing the function of a kidney allows dialysis to be continuously performed for 24 hours with high efficiency and also allows the ability of a renal tubule to reabsorb useful substances to be achieved. | 2009-08-20 |
20090209020 | collagenous matrix with improved porosity and tensile strength and preparation method therefore by using mechanical stimulation system - The present invention relates to a method of preparing a collagen matrix with increased porosity and tensile strength by using mechanical stimulation system. More specifically, in the present invention, the cell-populated gel is being cultured under the condition that the physical forces is loaded for causing the matrix to move periodically and discontinuously. Resulting collagen matrix can be used for preparing an artificial skin or organs. Furthermore, this collagen matrix can be used as fillers for esthetic or therapeutic purposes. | 2009-08-20 |
20090209021 | Variant Form of Urate Oxidase and Use Thereof - The present invention relates to genetically modified proteins with uricolytic activity. More specifically, the invention relates to proteins comprising truncated urate oxidases and methods for producing them, including PEGylated proteins comprising truncated urate oxidases. | 2009-08-20 |
20090209022 | Crystal Structure of Ump Kinase and Uses Thereof - The present invention relates crystals of UMP kinase and computer-assisted methods for screening, identifying, and designing inhibitors and allosteric modulators of UMP kinase. | 2009-08-20 |
20090209023 | METHOD FOR PRODUCTION OF ACETIC ACID BACTERIUM-TYPE CERAMIDE - [Problems] To provide a method for efficient production of an acetic acid bacterium-type ceramide which is expected to have physiological effects such as making skin beautiful, by increasing the content of ceramide contained in cells of an acetic acid bacterium. | 2009-08-20 |
20090209024 | Combinatorial DNA library for producing modified N-glycans in lower eukaryotes - The present invention relates to eukaryotic host cells having modified oligosaccharides which may be modified further by heterologous expression of a set of glycosyltransferases, sugar transporters and mannosidases to become host-strains for the production of mammalian, e.g., human therapeutic glycoproteins. The invention provides nucleic acid molecules and combinatorial libraries which can be used to successfully target and express mammalian enzymatic activities such as those involved in glycosylation to intracellular compartments in a eukaryotic host cell. The process provides an engineered host cell which can be used to express and target any desirable gene(s) involved in glycosylation. Host cells with modified oligosaccharides are created or selected. N-glycans made in the engineered host cells have a Man | 2009-08-20 |
20090209025 | HIGH SOLID THERMOPHILIC ANAEROBIC DIGESTER - A device for digesting sludge anaerobically, comprising a digesting tank ( | 2009-08-20 |
20090209026 | ALPHA-AMYLASE VARIANTS WITH ALTERED PROPERTIES - Disclosed are compositions comprising variants of alpha-amylase that have alpha-amylase activity and that exhibit altered properties relative to a parent AmyS-like alpha-amylase from which they are derived. The compositions generally comprise at least one of an additional enzyme, a detergent, a surfactant, a chelator, an oxidizing agent, an acidulant, an alkalizing agent, a source of peroxide, a source of hardness, a salt, a detergent complexing agent, a polymer, a stabilizing agent, or a fabric conditioner. Also disclosed are detergent formulations comprising the variants. Methods of using the compositions for desizing woven material and washing or cleaning items, such as dishes or laundry, are disclosed. Kits related thereto are also provided. | 2009-08-20 |
20090209027 | INTRODUCTION OF MICROORGANISMS IN BIO-ASSISTED HEAP LEACHING OPERATIONS - The invention discloses a method of introducing microorganisms into a heap of material for bio-assisted heap leaching by preparing microorganisms substantially without exopolymers on their external cell walls; adding such microorganisms to the heap; and re-activating the production of exopolymers on the external cells walls of the microorganisms in the heap. The invention also extends to a method of enriching the environment of microorganisms' embedded in a heap for bio-assisted heap leaching. | 2009-08-20 |
20090209028 | Sensing Chip - There is provided a sensing chip capable of measuring a refractive index by utilizing a long-range surface plasmon polariton, accurately measuring an accumulative refractive index in a wide range, and more easily enabling sealing for measurement. The present invention relates to the sensing chip which has a thin metal film or a strip-like metal grown on an underlayer, and has a dielectric that limits a refractive index and a dielectric buffer layer on an upper surface and a lower surface of the thin metal film or the strip-like metal. The dielectric buffer layer is attached onto the thin metal film or the strip-like metal. The thin metal film or the strip-like metal and the buffer layer are sandwiched between two dielectric layers. A hole is made in a surface of the upper dielectric layer to serve as a measurement groove. | 2009-08-20 |
20090209029 | HIGH-DENSITY ION TRANSPORT MEASUREMENT BIOCHIP DEVICES AND METHODS - The present invention includes biochips for the measurement of cellular ion channels and methods of use and manufacture. The biochips of the present invention have enhanced sealing capabilities provided in part by chemically modifying the surface of the biochip surface or substrate or by exposure to an ionized gas. The present invention also includes novel cartridges for biochips. | 2009-08-20 |
20090209030 | Thermal Cycler - A thermalcycler is constructing with a first thermalcycler body section of a flexible circuit material or a circuit board material. The first thermalcycler body section has a first face. A first cavity portion is formed in the first face. A second thermalcycler body section is constructed of a flexible circuit material or a circuit board material. The second thermalcycler body section has a second face. A second cavity portion is formed in the second face. When the first cavity portion and the second cavity portion are positioned together they form a cavity. A thermalcycler unit is positioned in the cavity. The first thermalcycler body section and the second thermalcycler body section are connected together with the first face and the face opposed to each other and the thermalcycler unit operatively connected to the first cavity portion and the second cavity portion. | 2009-08-20 |
20090209031 | MEDICAL DEVICE PACKAGE - A package for a medical device, the package capable of sustaining viable cells, wherein the package includes a first container, which is configured to receive a medical device and to sustain at least one viable cell, and a fluid port in communication with the first container for allowing sterile passage of an agent to the medical device and for maintaining cell viability. | 2009-08-20 |
20090209032 | FEEDING BUFFERS, SYSTEMS, AND METHODS FOR IN VITRO SYNTHESIS OF BIOMOLECULES - Compositions, methods and kits for in vitro systems for synthesis of biomolecules such as polypeptides, are provided herein. Cell extracts that provide enhanced yields of soluble proteins using in vitro protein synthesis methods are provided. The invention also includes methods for producing high yields of proteins by the addition of a feeding solution that includes amino acids and an energy source to an ongoing in vitro synthesis system. The invention also includes methods of using a high-yield in vitro synthesis system to produce large quantities of proteins with incorporated labeled amino acids for analysis by methods such as by NMR. The invention further includes vectors for enhanced production of proteins from nucleic acid templates using in vitro synthesis systems. | 2009-08-20 |
20090209033 | Immortalized hepatocyte cell line secreting modified insulin with glucose sensitivity - The present invention provides a cell line which can be substituted for β cells in human mature pancreatic islets and express insulin in a glucose-concentration dependent manner, and enables the easy obtainment of the number of cells which meets the demand. The present invention also provides a therapeutical cell preparation for treating diabetes. The cell lines of the present invention can be obtained by integrating both a nucleotide sequence encoding tamoxifen-induced Cre recombinase and a nucleotide sequence encoding insulin regulated by glucose-sensitive promoter into the chromosome in a human immortalized hepatic cell line FERM BP-7498 containing the TERT gene inserted in between a pair of LoxP sequences. | 2009-08-20 |
20090209034 | TUMOUR REJECTION ANTIGENS - Polypeptides comprising an unbroken sequence of amino acids from SEQ. ID. NO. 1 or 2, with an ability to complex with a major histocompatibility complex molecule type HLA-A2, and preferably HLA-A2.1. | 2009-08-20 |
20090209035 | CELL OR TISSUE CULTIVATION APPARATUS AND METHOD OF CULTIVATION - A cultivation apparatus and a cultivation method of a culture such as a cell or tissue. Provided are an incubator unit for accommodating a culture and a lever that penetrates through the incubator unit and can move in circular arc around a fulcrum as a center, the fulcrum being set at a wall of the incubator unit or in the vicinity thereof, then displacement is imparted to the culture by operating the lever. Bending force can be acted on the culture (cell construct) such as a cell or tissue, so that without any increase or decrease of a culture fluid in the incubator unit, namely, without any increase or decrease of pressure to the culture fluid, displacement required for cultivation can be imparted to the culture in the incubator unit. By curving, continuous compression and extension are generated in a direction of thickness from a concave portion to a convex portion of the curving. | 2009-08-20 |
20090209036 | Method for Accelerating Somatic Mutations and use Thereof in Proteomics - The invention relates to a method of accelerating the induction of somatic mutations in vitro. The inventive method comprises the expression of at least one cDNA expressing a modified version of the AID gene in the cells to be mutated, in culture conditions and a medium that are suited thereto, said modified version resulting from an AID gene in which the three hydrophobic amino acids, leu189, phe193 and leu196, have been replaced by means of alanine mutations in each case. The invention can be used to induce mutations in Burkitt's lymphoma BL2. The invention can also be used to induce mutations in the immunoglobulin genes of immortalised antibody-producing cells, such as mouse hybridoma cells, human hybridoma cells or human B-cell lines immortalised by the Epstein-Barr virus (EBV). | 2009-08-20 |
20090209037 | Viral core protein-cationic lipid-nucleic acid-delivery complexes - A nucleic acid delivery complex is provided which comprises a condensed polypeptide/nucleic acid complex and a cationic lipid wherein the complex comprises (a) a nucleic acid sequence of interest (NOI); and (b) one or more viral nucleic acid packaging polypeptides, or derivatives thereof, said polypeptides or derivatives thereof being (i) capable of binding to the NOI; and (ii) capable of condensing the NOI; and wherein the NOI is heterologous to the polypeptide. Also provided is a method of introducing an NOI into a cell using the delivery vector. | 2009-08-20 |
20090209038 | Cell-Mediated Directed Evolution - The present invention relates to systems which harness the molecular biology of a living cell to direct evolution of biological entities of interest. According to the invention, a host cell is engineered to facilitate mutation of a nucleic acid target corresponding to that entity and select for desirable mutants. As applied to populations of host cells, the invention provides a means to generate and contemporaneously select mutants of interest, allowing for the production of extremely diverse libraries enriched in the most ‘fit’ mutants. | 2009-08-20 |
20090209039 | METHOD AND APPARATUS FOR MICROFLUIDIC INJECTION - A method and apparatus for producing a jet or droplet of liquid. An injector device may include a reservoir in fluid communication with a nozzle, and a pressure gradient may be produced in the reservoir (e.g., by a piezoelectric element in an initial direction that is transverse to the emission direction of the jet or droplet) to produce a jet of liquid from the nozzle. The jet or droplet of liquid may be introduced through a cell membrane and into the cell interior in such a way that damage to the cell membrane that would cause cell death is avoided. An electrode may be formed adjacent a fluid channel by conducting a liquid material, such as solder, from a reservoir and into an electrode portion of an electrode channel to a location adjacent the fluid channel. A passageway between the electrode channel and the fluid channel may prevent flow of the liquid electrode material into the fluid channel during electrode formation. | 2009-08-20 |
20090209040 | Sensor release mechanism for a meter - A sensor-dispensing instrument ( | 2009-08-20 |
20090209041 | Peptides and methods for inhibiting amyloid formation - A peptide comprising at least 5 amino acid residues and less than 15 amino acid residues, the peptide including an amino acid sequence as set forth in SEQ ID NO: 7 as well as pharmaceutical compositions, kits and methods for diagnosing and treating amyloid associated diseases. | 2009-08-20 |
20090209042 | CONTROLLABLE MAGNETIC SYSTEM FOR BIOSENSORS - The invention relates to a magnetic system for biosensors and in particular to a magnetic system which can switch between attraction force and repulsion force near the sensor surface with more easy but also more effective means. This is realised with at least one coil (2) and at least two ferromagnetic cores (3) which are arranged in a concentric multilayered package, and a sensor or a sensor surface exposed to or covered with the biomaterial, which is arranged near to the magnetic system. | 2009-08-20 |
20090209043 | DEVICE AND METHOD FOR HOLDING A CASSETTE FOR LABORATORY SAMPLES | 2009-08-20 |
20090209044 | Fluid Sample Collection System and Method - A fluid sample collection system includes a vial, a plunger and a fluid sample collection device having an absorbent for absorbing and retaining a fluid sample therein. The plunger includes an elongated handle portion and a plunger head portion detachably connected to the handle portion. The plunger also includes a splash guard supported on the handle portion. During the sample collection process, the saturated absorbent from the sample collection device is placed into the vial and the plunger is then advanced toward a closed end of the vial to express the fluid sample from the absorbent. The plunger head portion is retained within the vial with the absorbent in a generally compressed state and the handle portion is detached and removed from the vial. | 2009-08-20 |
20090209045 | SCREENING ASSAY - The present invention relates to agents that modulate the interaction of a dopamine receptor interacting polypeptide (DRIP) as represented by FIGS. | 2009-08-20 |
20090209046 | Neutral Pharmaceuticals - The invention comprises neutral multi-functionality assemblies of pharmaceuticals comprising an active medicinal functionality, a transition metal functionality, and an ancillary ligand functionality. An exemplary series of mixed-ligand coordination complexes comprised of copper(II), a drug and an ancillary ligand were made and tested. It is demonstrated that the judicious choice of an ancillary ligand affords a large degree of control over die relative lipophilicity/hydrophilicity of the complex in relation to the uncomplexed drug molecule. The important factors to be considered in the design of such complexes, such as the additive-constitutive nature of the partition coefficient of the ancillary ligand and the relative size of the two types of ligands are disclosed, and methods of designing neutral multi-functionality assemblies of pharmaceuticals are disclosed. | 2009-08-20 |
20090209047 | BIOMARKERS AND ASSAYS FOR MYOCARDIAL INFARCTION - Presented herein are novel blood plasma/serum biomarkers related to cardiovascular disease. These newly identified biomarkers create the basis for multiple (single) assays using traditional bioassay technologies and when used in combination yield exceptional clinical sensitivity and specificity in the determination of myocardial infarction (MI). A multiplexed, mass spectrometric immunoassay (MSIA) able to simultaneously assay for the new/novel biomarkers as well other MI markers is also presented. Means and methods for evaluating data generated using multiple biomarkers in order to validate findings and further the use of the multiplexed MI assay in clinical, diagnostic and therapeutic uses is also included. | 2009-08-20 |
20090209048 | Luminescence Biotin-Transition Metal Complex Conjugate, and Method of Amplifying Signal Using the Same - Disclosed are a luminescence biotin-transition metal complex conjugate and a method of amplifying signals using the same. More particularly, disclosed herein are a luminescence biotin-transition metal complex conjugate comprising an energy acceptor and biotin, and optionally an energy donor and a method of amplifying signals using the biotin-transition metal complex conjugate using intramolecular energy transfer. The luminescence biotin-transition metal complex conjugate using a transition metal probe provides a phosphorescence detection system capable of improved sensitivity. | 2009-08-20 |
20090209049 | USE OF METAL COMPLEXES - A method of immobilising a target molecule on a substrate, which comprises exposing the target molecule to the substrate in the presence of a metal complex, wherein the target molecule is an unmodified target molecule, and wherein the metal complex is selected to provide a stable binding interaction between the target molecule and the substrate. | 2009-08-20 |
20090209050 | In-Situ Formed Capping Layer in MTJ Devices - A method of forming an integrated circuit includes forming magnetic tunnel junction (MTJ) layers; etching the MTJ layers to form a MTJ cell; and forming a dielectric capping layer on sidewalls of the MTJ cell, wherein the step of forming the dielectric capping layer is in-situ performed with the step of etching the MTJ layers. | 2009-08-20 |
20090209051 | NONVOLATILE FERROELECTRIC PERPENDICULAR ELECTRODE CELL, FeRAM HAVING THE CELL AND METHOD FOR MANUFACTURING THE CELL - A nonvolatile ferroelectric perpendicular electrode cell comprises a ferroelectric capacitor and a serial PN diode switch. The ferroelectric capacitor includes a word line perpendicular electrode as a first electrode and a storage perpendicular electrode as a second electrode apart at a predetermined interval from the word line perpendicular electrode to have a column type, where a ferroelectric material is filled in a space where the first electrode are separated from the second electrode. The serial PN diode switch, which is connected between a bit line and the ferroelectric capacitor, selectively switches a current direction between the bit line and the ferroelectric capacitor depending on voltage change between the bit line and the ferroelectric capacitor. | 2009-08-20 |
20090209052 | PROCESS FOR THE COLLECTIVE FABRICATION OF 3D ELECTRONIC MODULES - The invention relates to the collective fabrication of n 3D module. It comprises a step of fabricating a batch of n dies i at one and the same thin plane wafer ( | 2009-08-20 |
20090209053 | CONNECTION DEVICE AND TEST SYSTEM - To achieve high speed exchange of electrical signals between a connection device and a tester, a support member is provided for supporting the connection device, a plurality of pointed contact terminals are arrayed in an area on the probing side, a multilayer film is provided having a plurality of lead out wires electrically connected to the contact terminals and a ground layer enclosing an insulation layer, and a frame is clamped on the rear side of the multilayer film. A clamping member is provided on the frame to make the multilayer film project out to eliminate slack in the multilayer film. A contact pressure means is provided for making the tips of the contact terminals contact each of the electrodes with predetermined contact pressure from the support member to the clamping member. A compliance mechanism is provided so that the contact terminal group of the tip surface is arrayed in parallel with the electrode group terminal surface, so that the tips of the contact terminals contact the surface of the electrodes with an equal pressure. | 2009-08-20 |
20090209054 | METHOD FOR MANUFACTURING A LIQUID CRYSTAL DISPLAY - A method for manufacturing a liquid crystal display, the method includes steps of depositing a transparent conductive layer, forming a pixel electrode, and four bottom layers, depositing a semiconductor insulation layer on the pixel electrode and the four bottom layers, defining the semiconductor insulation layer to form two contact openings two of the bottom layers, depositing and defining two top layers and two scanning lines both with an indentation at an edge thereof, and the indentations face the first pixel electrode by an opposite direction, and forming four metal-insulation-metal (MIM) diodes. | 2009-08-20 |
20090209055 | Method to fabricate semiconductor optical device - A process for the semiconductor laser diode is disclosed, which prevents the abnormal growth occurred at the second growth for the burying region of the buried hetero structure. The ICP (Induction-Coupled Plasma) CVD apparatus forms a silicon oxide file with a thickness of above 2 μm as adjusting the bias power P | 2009-08-20 |
20090209056 | METHOD FOR MANUFACTURING SOLID-STATE IMAGING DEVICE - A method for manufacturing a solid-state imaging device in which a charge generator that detects an electromagnetic wave and generates signal charges is formed on a semiconductor substrate and a negative-charge accumulated layer having negative fixed charges is formed above a detection plane of the charge generator, the method includes the steps of: forming an oxygen-feed film capable of feeding oxygen on the detection plane of the charge generator; forming a metal film that covers the oxygen-feed film on the detection plane of the charge generator; and performing heat treatment for the metal film in an inactive atmosphere to thereby form an oxide of the metal film between the metal film and the oxygen-feed film on the detection plane of the charge generator, the oxide being to serve as the negative-charge accumulated layer. | 2009-08-20 |
20090209057 | INTEGRATED CIRCUIT ARRANGEMENT COMPRISING A PIN DIODE, AND PRODUCTION METHOD - An integrated circuit arrangement includes a pin photodiode and a highly doped connection region of a bipolar transistor. A production method produces an intermediate region of the pin diode with a large depth and without auto-doping in a central region. | 2009-08-20 |
20090209058 | Method of fabricating image sensor - A method of manufacturing an image sensor is provided. In this method, a photoelectric conversion unit may be formed within a semiconductor substrate, wherein the semiconductor substrate includes an active pixel region and an optical black region. An annealing layer may be formed on the active pixel region and the optical black region and etched so that the annealing layer covers at least a portion of the optical black region. A wiring pattern may be formed on the annealing layer. A light-blocking pattern may be formed on the wiring pattern so as to cover the entire photoelectric conversion unit of the optical black region, thereby blocking light from being incident upon the optical black region. | 2009-08-20 |
20090209059 | METHOD FOR MANUFACTURING PHOTOELECTRIC CONVERSION DEVICE - The purpose is manufacturing a photoelectric conversion device with excellent photoelectric conversion characteristics typified by a solar cell with effective use of a silicon material. A single crystal silicon layer is irradiated with a laser beam through an optical modulator to form an uneven structure on a surface thereof. The single crystal silicon layer is obtained in the following manner; an embrittlement layer is formed in a single crystal silicon substrate; one surface of a supporting substrate and one surface of an insulating layer formed over the single crystal silicon substrate are disposed to be in contact and bonded; heat treatment is performed; and the single crystal silicon layer is formed over the supporting substrate by separating part of the single crystal silicon substrate fixed to the supporting substrate along the embrittlement layer or a periphery of the embrittlement layer. Then, irradiation with a laser beam is performed on a separation surface of the single crystal silicon layer through an optical modulator which modulates light intensity regularly, and unevenness is formed on the surface. Due to the unevenness, reflection of incident light is reduced and absorptance with respect to light is improved, therefore, photoelectric conversion efficiency of the photoelectric conversion device is improved. | 2009-08-20 |
20090209060 | PHOTOELECTRIC CONVERTING FILM STACK TYPE SOLID-STATE IMAGE PICKUP DEVICE, AND METHOD OF PRODUCING THE SAME - A solid-state image pickup device comprises: a plurality of photoelectric converting films stacked via an insulating layer, the photoelectric converting films being above a semiconductor substrate in which a signal read circuit is formed, in which each of the photoelectric converting films is sandwiched between a pixel electrode film and an opposing electrode film, wherein the pixel electrode film of an upper one of the photoelectric converting films is connected to the signal read circuit by a longitudinal line passing through a lower one of the photoelectric converting films, and, in the longitudinal line, a passing portion which passes through the lower photoelectric converting film is formed by filling an opening with a conductive material, the opening being formed from a same plane of the pixel electrode film stacked on the lower photoelectric converting film to an upper end face of the insulating layer stacked above the photoelectric converting film. | 2009-08-20 |
20090209061 | METHOD OF MANUFACTURING SEMICONDUCTOR PACKAGE - Provided is a semiconductor package and method of manufacturing same. The method includes: forming a plurality of semiconductor chips which have the same pattern direction on a semiconductor substrate, each of which includes a memory cell region, a peripheral region and a pad region, and in each of which the pad region is disposed in an edge region; separating the semiconductor chips, which are formed on the semiconductor substrate, from one another; and disposing semiconductor chips, which are selected from the separated semiconductor chips, on a package substrate by changing the pattern directions of the selected semiconductor chips and arranging pad regions of the selected semiconductor chips in a center region of the package substrate. | 2009-08-20 |
20090209062 | Method of manufacturing semiconductor device and the semiconductor device - A method of manufacturing a semiconductor device which can reduce the number of times of resin-injection, thereby facilitating the miniaturization of the semiconductor device, and the semiconductor device. After resin is injected into a space between at least two second semiconductor chips flip-chip joined to a first semiconductor chip through an injection opening, the resin is hardened. | 2009-08-20 |
20090209063 | Chipstack package and manufacturing method thereof - A method for manufacturing chip stack packages may include: providing at least two wafers, each wafer having a plurality of chips, and scribe lanes formed between and separating adjacent chips; forming a plurality of via holes in peripheral portions of the scribe lanes; forming connection vias by filling the via holes; establishing electrical connections between the chip pads and corresponding connection vias; removing material from the back sides of the wafers to form thinned wafers; separating the thinned wafers into individual chips by removing a central portion of each scribe lane; attaching a first plurality of individual chips to a test wafer; attaching a second plurality of individual chips to the first plurality of individual chips to form a plurality of chip stack structures; encapsulating the plurality of chip stack structures; and separating the plurality of chip stack structures to form individual chip stack packages. | 2009-08-20 |
20090209064 | Lead frame land grid array - A package includes a first plated area, a second plated area, a die attached to the first plated area, and a bond coupling the die to the second plated area. The package further includes a molding encapsulating the die, the bond, and the top surfaces of the first and second plated areas, such that the bottom surfaces of the first and second plated areas are exposed exterior to the package. Additional embodiments include a method of making the package. | 2009-08-20 |
20090209065 | METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND ULTRASONIC BONDING APPARATUS - An example of the invention is a method of manufacturing a semiconductor device including, pressing a part of the connection conductor having a plate-like shape or a belt-like shape against a lead terminal which is formed on a lead frame, is formed into a thin and long plate-like shape, and is supported only at one end in a longitudinal direction of the terminal, in such a manner that the part of the conductor is brought into contact with the lead terminal, and applying ultrasonic vibration substantially in the longitudinal direction in a plane perpendicular to the pressing direction to the connection conductor in the state where the part of the connection conductor is pressed against the lead terminal. | 2009-08-20 |
20090209066 | DIE BONDING METHOD AND DIE BONDER - In a die bonding method, a bonding film is stuck to a rear surface of a wafer and to a dicing tape stuck to a dicing frame. The wafer is thus supported by the dicing frame. Predetermined dividing lines are completely cut and the bonding film is incompletely cut to leave a cut-residual portion. The dicing tape is stretched to break the cut-remaining portion. The die to which the bonding film is stuck is picked up from the dicing tape and bonded to a mount-targeted substrate. | 2009-08-20 |
20090209067 | SEMICONDUCTOR DEVICE METHOD OF MANFACTURING A QUANTUM WELL STRUCTURE AND A SEMICONDUCTOR DEVICE COMPRISING SUCH A QUANTUM WELL STRUCTURE - A semiconductor device ( | 2009-08-20 |
20090209068 | METHOD OF MANUFACTURING THIN FILM TRANSISTOR SUBSTRATE - In a method of manufacturing a thin film transistor substrate, a gate line and a gate electrode are formed on a substrate. A gate insulating layer is formed to cover the gate line and the gate electrode. A semiconductor layer is formed on the gate insulating layer to overlap with the gate electrode. A data line, a source electrode, and a drain electrode are formed on the gate insulating layer and the semiconductor layer. A photoresist layer is formed on the data line, the source electrode, and the drain electrode. The photoresist layer is patterned, and an organic layer is formed on the substrate having the photoresist layer pattern. Then, the photoresist layer pattern is removed. | 2009-08-20 |
20090209069 | ORGANIC SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - It is an object of the present invention to provide a method for manufacturing an inexpensive organic TFT which does not depend on an expensive dedicated device and does not expose an organic semiconductor to atmospheric air. Moreover, it is another object of the present invention to provide a method for manufacturing an organic TFT at low temperature so as not to cause a problem of pyrolyzing a material. In view of the foregoing problems, one feature of the present invention is that a film-like protector which serves as a protective film is provided over an organic semiconductor film. The film-like protector can be formed by being fixed to a film-like support body with an adhesive agent or the like. | 2009-08-20 |
20090209070 | METHOD FOR MANUFACTURING A THIN FILM TRANSISTOR HAVING A MICRO-CRYSTALLINE SILICON HYDROGEN FEEDING LAYER FORMED BETWEEN A METAL GATE AND A GATE INSULATING FILM. - A TFT (Thin Film Transistor) is provided in which a hydrogen feeding layer is able to be formed in a position where diffusing distance of hydrogen can be made short without causing an increase in photolithography processes. In the TFT, the hydrogen feeding layer to diffuse hydrogen into a dangling bond existing at an interface between a polycrystalline silicon thin film and a gate insulating film is formed in a position between the gate insulating film and a gate electrode. According to this configuration, diffusing distance of hydrogen at a period of time during hydrogenation can be made short and the hydrogenation process can be sufficiently performed without taking time in heat treatment. | 2009-08-20 |
20090209071 | METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES - First nanowires and second nanowires are alternately disposed and spaced apart on a first substrate in a second direction that is parallel to an adjacent major surface of the first substrate. Each of the first and second nanowires extends in a first direction that is perpendicular to the second direction, and the first and second nanowires are doped with first and second conductive types, respectively. A plurality of gate lines are formed that are at least partially disposed within the first substrate, that are spaced apart in a third direction, that extend in a fourth direction that is perpendicular to the third direction, and that partially enclose the first and second nanowires | 2009-08-20 |
20090209072 | Methods Of Forming Transistor Gates, Methods Of Forming Memory Cells, And Methods Of Forming DRAM Arrays - Some embodiments include methods of forming transistor gates. A gate stack is placed within a reaction chamber and subjected to at least two etches, and to one or more depositions to form a transistor gate. The transistor gate may comprise at least one electrically conductive layer over a semiconductor material-containing layer. At least one of the one or more depositions may form protective material. The protective material may extend entirely across the at least one electrically conductive layer, and only partially across the semiconductor material-containing layer to leave unlined portions of the semiconductor material-containing layer. The unlined portions of the semiconductor material-containing layer may be subsequently oxidized. | 2009-08-20 |
20090209073 | Gate Structure in a Trench Region of a Semiconductor Device and Method for Manufacturing the Same - Disclosed are a gate structure in a trench region of a semiconductor device and a method for manufacturing the same. The semiconductor device includes a pair of drift regions formed in a semiconductor substrate; a trench region formed between the pair of drift regions; an oxide layer spacer on sidewalls of the trench region; a gate formed in the trench region; and a source and a drain formed in the pair of the drift regions, respectively. | 2009-08-20 |
20090209074 | METHOD OF FORMING A MULTI-FIN MULTI-GATE FIELD EFFECT TRANSISTOR WITH TAILORED DRIVE CURRENT - Disclosed are embodiments of an improved multi-gated field effect transistor (MUGFET) structure and method of forming the MUGFET structure so that it exhibits a more tailored drive current. Specifically, the MUGFET incorporates multiple semiconductor fins in order to increase effective channel width of the device and, thereby, to increase the drive current of the device. Additionally, the MUGFET incorporates a gate structure having different sections with different physical dimensions relative to the semiconductor fins in order to more finely tune device drive current (i.e., to achieve a specific drive current). Optionally, the MUGFET also incorporates semiconductor fins with differing widths in order to minimize leakage current caused by increases in drive current. | 2009-08-20 |
20090209075 | LATERALLY DOUBLE-DIFFUSED METAL OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD FOR FABRICATING THE SAME - The present invention discloses a laterally double-diffused metal oxide semiconductor transistor (LDMOS) and a method for fabricating the same. The LDMOS includes a substrate, a first well, a drain, a second well and a source. The substrate includes a first conductive dopant. The first well includes a second conductive dopant and formed in a part of the substrate, and the drain is located in the first well. The second well includes the first conductive dopant and formed in another part of the substrate, and the source located in the second well. The source includes a lightly doped region and a heavily doped region extending downwardly from a top surface of the substrate. The depth of the lightly doped region is more than the depth of the heavily doped region. | 2009-08-20 |
20090209076 | METHOD FOR MANUFACTURING SONOS FLASH MEMORY - A method for manufacturing a semiconductor device which includes steps of forming a dummy layer on a semiconductor substrate, forming a groove 12 in the semiconductor substrate while using the dummy layer as a mask, forming a tunnel insulating film and a trap layer to cover an inner surface of the groove and the dummy layer, eliminating the trap layer formed above the upper surface and at the sides of the dummy layer, and forming a top insulating film to cover a remaining trap layer and the exposed tunnel insulating film. | 2009-08-20 |
20090209077 | SEMICONDUCTOR DEVICE CHANNEL TERMINATION - A semiconductor device has a channel termination region for using a trench | 2009-08-20 |
20090209078 | Semiconductor Integrated Circuit Device and Method of Manufacturing the Same - Provided is a manufacturing method of a semiconductor integrated circuit device having a plurality of first MISFETs in a first region and a plurality of second MISFETs in a second region, which comprises forming a first insulating film between two adjacent regions of the first MISFET forming regions in the first region and the second MISFET forming regions in the second region; forming a second insulating film over the surface of the semiconductor substrate between the first insulating films in each of the first and second regions; depositing a third insulating film over the second insulating film; forming a first conductive film over the third insulating film in the second region; forming, after removal of the third and second insulating films from the first region, a fourth insulating film over the surface of the semiconductor substrate in the first region; and forming a second conductive film over the fourth insulating film; wherein the third insulating film remains over the first insulating film in the second region. The present invention makes it possible to raise the threshold voltage of a parasitic MOS and in addition, to suppress occurrence of an NBT phenomenon. | 2009-08-20 |
20090209079 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method for manufacturing a semiconductor device includes forming a diffusion layer on a silicon substrate by doping an impurity of a first conductivity type into a region of a second conductivity type opposite to the first conductivity type and performing a heat treatment; implanting nitrogen or fluorine ions into the diffusion layer; and irradiating carbon dioxide gas laser light to the diffusion layer after the implanting. | 2009-08-20 |
20090209080 | Methods of Forming Pluralities of Capacitors - The invention includes methods of forming pluralities of capacitors. In one implementation, a method of forming a plurality of capacitors includes providing a plurality of capacitor electrodes within a capacitor array area over a substrate. The capacitor electrodes comprise outer lateral sidewalls. The plurality of capacitor electrodes is supported at least in part with a retaining structure which engages the outer lateral sidewalls. The retaining structure is formed at least in part by etching a layer of material which is not masked anywhere within the capacitor array area to form said retaining structure. The plurality of capacitor electrodes is incorporated into a plurality of capacitors. Other aspects and implementations are contemplated. | 2009-08-20 |
20090209081 | Silicon Dioxide Thin Films by ALD - Methods are provided for depositing silicon dioxide containing thin films on a substrate by atomic layer deposition ALD. By using disilane compounds as the silicon source, good deposition rates and uniformity are obtained. | 2009-08-20 |
20090209082 | Semiconductor Device and Method for Fabricating the Same - A semiconductor device and a method for fabricating the same may improve the isolation characteristics without deterioration of the junction diode characteristics and an increase in a threshold voltage of a MOS transistor. The device includes a semiconductor substrate; an STI layer in a predetermined portion of the semiconductor substrate, dividing the semiconductor substrate into an active region and a field region; and a field channel stop ion implantation layer in the semiconductor substrate under the STI layer. | 2009-08-20 |
20090209083 | Hybrid Gap-fill Approach for STI Formation - A method of forming a shallow trench isolation region is provided. The method includes providing a semiconductor substrate comprising a top surface; forming an opening extending from the top surface into the semiconductor substrate; performing a conformal deposition method to fill a dielectric material into the opening; performing a first treatment on the dielectric material, wherein the first treatment provides an energy high enough for breaking bonds in the dielectric material; and performing a steam anneal on the dielectric material. | 2009-08-20 |
20090209084 | CLEAVE INITIATION USING VARYING ION IMPLANT DOSE - An approach for providing a cleave initiation using a varying ion implant dose is described. In one embodiment, there is a method of forming a substrate. In this embodiment, a semiconductor material is provided and implanted with a spatially varying dose of one or more ion species. A handler substrate is attached to the implanted semiconductor material. A cleave of the implanted semiconductor material is initiated from the handler substrate at a preferential location that is a function of a dose gradient that develops from the spatially varying dose of one or more ion species implanted into the semiconductor material | 2009-08-20 |
20090209085 | METHOD FOR REUSING DELAMINATED WAFER - The present invention provides a method for reusing a delaminated wafer, which is a method for applying reprocessing that is at least polishing to a delaminated wafer | 2009-08-20 |
20090209086 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Highly reliable single crystal semiconductor layers and semiconductor devices can be obtained through a fewer manufacturing steps. A method for manufacturing a semiconductor device is proposed. A single crystal semiconductor substrate provided with an insulating film is irradiated with an ion beam to form a damaged region in the single crystal semiconductor substrate; liquid glass is floated over a liquid denser than the liquid glass to shape the liquid glass into a plate; the single crystal semiconductor substrate provided with the damaged region is placed over the plate-like liquid glass so that the insulating film and the liquid glass face each other; the plate-like liquid glass and the single crystal semiconductor substrate are cooled slowly, whereby a glass substrate is obtained from the plate-like liquid glass and concurrently the glass substrate and the single crystal semiconductor substrate are bonded together; and a single crystal semiconductor layer is separated from the single crystal semiconductor substrate along the damaged region. | 2009-08-20 |
20090209087 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICES - In a method of manufacturing semiconductor chips by dicing individual semiconductor devices from a semiconductor wafer, masks formed for plasma dicing in which a semiconductor wafer is divided by conducting plasma etching are removed by mechanical grinding using a grinding head. Accordingly, by removing the masks for plasma dicing using mechanical grinding, generation of reaction products is prevented when removing the masks, so that the dicing can be conducted without causing quality deterioration due to the accumulated particles. | 2009-08-20 |
20090209088 | SEMICONDUCTOR CHIP FABRICATION METHOD - A semiconductor chip fabrication method including a modified layer forming step of applying a laser beam having a transmission wavelength to the semiconductor wafer from the back side of the semiconductor wafer along the streets formed on the front side of the semiconductor wafer so that a focal point of the laser beam is set inside the semiconductor wafer, thereby forming a modified layer in the semiconductor wafer along each street, a metal film deposition step of depositing a metal film on the back side of the semiconductor wafer after the modified layer forming step, a semiconductor wafer attaching step of attaching the semiconductor wafer to an adhesive tape supported to an annular frame, and a semiconductor wafer dividing step of applying an external force to the semiconductor wafer in the condition where the semiconductor wafer is attached to the adhesive tape to thereby divide the semiconductor wafer with the metal film into the individual semiconductor chips along the modified layer formed along each street. | 2009-08-20 |
20090209089 | DICING DIE-BONDING FILM - The present invention provides a dicing die-bonding film including a dicing film having a pressure sensitive adhesive layer provided on a base material and a die-bonding film provided on the pressure sensitive adhesive layer, and having excellent storage stability of a product even at room temperature. The dicing die-bonding film in the present invention is a dicing die-bonding film having a dicing film including a radiation curable pressure sensitive adhesive layer provided onto a base material and a die-bonding film provided on the pressure sensitive adhesive layer, in which a pressure sensitive adhesive in the pressure sensitive adhesive layer is constituted by containing an acryl polymer, and in which the acid value of the acryl polymer is in a range of 0.01 to 1 and the iodine value is in a range of 5 to 10. | 2009-08-20 |
20090209090 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - A problem in the conventional technique is that metal contamination on a silicon carbide surface is not sufficiently removed in a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate. Accordingly, there is a high possibility that the initial characteristics of a manufactured silicon carbide semiconductor device are deteriorated and the yield rate is decreased. Further, it is conceivable that the metal contamination has an adverse affect even on the long-term reliability of a semiconductor device. In a manufacturing method of a semiconductor device using a monocrystalline silicon carbide substrate, there is applied a metal contamination removal process, on a silicon carbide surface, including a step of oxidizing the silicon carbide surface and a step of removing a film primarily including silicon dioxide formed on the silicon carbide surface by the step. | 2009-08-20 |
20090209091 | Method of Manufacturing Group III Nitride Crystal - Made available is a Group III nitride crystal manufacturing method whereby incidence of cracking in the III-nitride crystal when the III-nitride substrate is removed is kept to a minimum. III nitride crystal manufacturing method provided with: a step of growing, onto one principal face ( | 2009-08-20 |
20090209092 | SEIMICONDUCTOR DEVICES AND METHODS OF MANUFACTURE THEREOF - A FinFET and methods for its manufacture are provided. The method of the invention provides an elegant process for manufacturing FinFETs with separated gates. It is compatible with a wide range of dielectric materials and gate electrode materials, providing that the gate electrode material(s) can be deposited conformally. Provision of at least one upstanding structure (or “dummy fin”) ( | 2009-08-20 |
20090209093 | PLASMA DEPOSITION APPARATUS AND METHOD FOR MAKING POLYCRYSTALLINE SILICON - A plasma deposition apparatus for making polycrystalline silicon including a chamber for depositing said polycrystalline silicon, the chamber having an exhaust system for recovering un-deposited gases; a support located within the deposition chamber for holding a target substrate having a deposition surface, the deposition surface defining a deposition zone; at least one induction coupled plasma torch located within the deposition chamber and spaced apart from the support, the at least one induction coupled plasma torch producing a plasma flame that is substantially perpendicular to the deposition surface, the plasma flame defining a reaction zone for reacting at least one precursor gas source to produce the polycrystalline silicon for depositing a layer of the polycrystalline silicon the deposition surface. | 2009-08-20 |
20090209094 | Semiconductor Element Manufacturing Method - [PROBLEMS] To provide a semiconductor element manufacturing method by which a semiconductor element having high accuracy and high function can be manufactured by controlling diffusion depth and diffusion concentration in a pn junction region with high accuracy. | 2009-08-20 |
20090209095 | Manufacturing Method for Semiconductor Devices and Substrate Processing Apparatus - The throughput in the overall gate stack forming process is improved. When using a cluster apparatus to perform a gate stack forming process including a high dielectric film forming step, a plasma nitriding step, an annealing step and a gate electrode forming step, the final ongoing gate electrode forming step is stopped in the middle, and the remainder of the gate electrode forming step is performed on multiple wafers as batch processing. This shortens the standby time for consecutive steps in the cluster apparatus to improve the throughput in the overall gate stack forming process. | 2009-08-20 |
20090209096 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE HAVING DECREASED CONTACT RESISTANCE - A method for manufacturing a semiconductor device includes the steps of forming an insulation layer having a contact hole, on a semiconductor substrate, forming a Co layer on the insulation layer including a surface of the contact hole, conducting primary annealing to allow the Co layer and a portion of the semiconductor substrate to react with each other such that a CoSi layer is formed at an interface therebetween. The resultant semiconductor substrate is cleaned to remove a portion of the Co layer not having reacted in the primary annealing. A barrier layer is formed on the insulation layer, the CoSi layer, and the surface of the contact hole. A secondary annealing is conducted to convert the CoSi layer into a CoSi | 2009-08-20 |
20090209097 | METHOD OF FORMING INTERCONNECTS - A method of forming interconnects includes etching a first set of openings in a hard mask using a first photo resist layer with a first pattern of openings as a first etch mask, and etching a second set of openings in the hard mask using a second photo resist layer with a second pattern of openings as a second etch mask. The method includes shrinking the openings in at least one of the first pattern and the second pattern prior to etching the openings in the hard mask. | 2009-08-20 |
20090209098 | Multi-Step Cu Seed Layer Formation for Improving Sidewall Coverage - A method of forming an integrated circuit structure includes forming a dielectric layer; forming an opening in the dielectric layer; performing a first deposition step to form a seed layer in a first chamber; and performing a first etch step to remove a portion of the seed layer. The method may further include performing a second deposition step to increase the thickness of the seed layer. At least one of the first etch step and the second deposition step is performed in a second chamber different from the first chamber. | 2009-08-20 |
20090209099 | Forming Diffusion Barriers by Annealing Copper Alloy Layers - A method of forming an interconnect structure of an integrated circuit includes providing a semiconductor substrate; forming a dielectric layer over the semiconductor substrate; forming an opening in the dielectric layer; and forming a copper alloy seed layer in the opening. The copper alloy seed layer physically contacts the dielectric layer. The copper alloy seed layer includes copper and an alloying material. The method further includes filling a metallic material in the opening and over the copper alloy seed layer; performing a planarization to remove excess metallic material over the dielectric layer; and performing a thermal anneal to cause the alloying material in the copper alloy seed layer to be segregated from copper. | 2009-08-20 |