33rd week of 2022 patent applcation highlights part 30 |
Patent application number | Title | Published |
20220259669 | METHODS OF IDENTIFYING A SUBJECT SUITABLE FOR AN IMMUNO-ONCOLOGY (I-O) THERAPY - The present disclosure provides methods of identifying a subject suitable for an immunooncology (I-O) therapy comprising measuring the expression of one or more of STAT1, IFNγ, NECTIN2, and CSFIR. In some aspects, the I-O therapy comprises administering an anti-PD-1 antibody or antigen-binding portion thereof or an anti-PD-L1 antibody or antigen-binding portion thereof to the subject. | 2022-08-18 |
20220259670 | KIT AND METHOD FOR ANALYZING SINGLE T CELLS - A kit and method for analyzing nucleic acid molecules encoding T cell receptor (TCR) a and β from individual T cells are disclosed. In particular, a method for analyzing individual T cells using high-throughput multiplex amplification and deep sequencing of nucleic acids encoding TCRαβ is provided. | 2022-08-18 |
20220259671 | KIT AND METHODS TO DETECT MET GENE FUSION - Provided is a kit for detecting MET fusion, including MET gene fusion and MET exon 14 skipping. The kit includes a set of MET fusion-specific primer pairs and a set of MET fusion-specific probes. Also provided is a method for detecting MET fusion, including generating an amplified target cDNA to hybridize with the set of MET fusion-specific probes in a single reaction and detecting the probe-bound product to identify all possible MET fusions in a biological sample. | 2022-08-18 |
20220259672 | GENE MARKER COMBINATION AND USE THEREOF - The present invention relates to a tumor marker, a methylation detection reagent, a kit and use thereof. By detecting the methylation level of SDC2, COL4A1/COL4A2 and ITGA4 genes, colorectal cancer specimens can be well distinguished from fecal specimens, and the detection sensitivity and specificity for the colorectal cancer can be 90% or above. | 2022-08-18 |
20220259673 | METHODS FOR IDENTIFYING AND TREATING HIGH-PLASTICITY CELL STATE DRIVING TUMOR PROGRESSION IN LUNG CANCER - The present disclosure provides methods for detecting and inhibiting high-plasticity cell state (HPCS) in patients diagnosed with or at risk for lung cancer. Also disclosed herein are methods for reducing the expression and/or activity of SLC4A11, OC2, MYC, RELB, LIF, NFKB2, FOSL2, ATF4, and/or YAP to inhibit HPCS in lung cancer. | 2022-08-18 |
20220259674 | COMPOSITIONS AND METHODS FOR TREATING BREAST CANCER - Provided herein are compositions and methods for cancer diagnosis, research and therapy, including but not limited to, cancer markers. In particular, provided herein are methods of treating basal-like breast cancer based on expression levels of a panel of cancer markers. | 2022-08-18 |
20220259675 | GENE SIGNATURES FOR CANCER PROGNOSIS - Biomarkers and methods using the biomarkers for the prediction of the recurrence risk of cancer in a patient are provided. | 2022-08-18 |
20220259676 | METHOD FOR ASSESSING PROGNOSIS OR RISK STRATIFICATION OF LIVER CANCER BY USING CPG METHYLATION VARIATION IN GENE - The present invention relates to a method for assessing the prognosis or risk stratification of liver cancer by using a clinical specimen mixed with a normal tissue, wherein at least one CpG site that shows a low methylation level in normal and blood tissues but a high methylation level in only a cancer tissue is measured for methylation level. | 2022-08-18 |
20220259677 | Markers for Determining Tumor Hypoxia - The present application relates to the field of cancer, particular to hypoxic tumors. It was found that hypoxia is an important driver for hypermethylation of (promoters of) tumor suppressor genes. As this hypermethylation is a stable signature that is also present in circulating tumor DNA in peripheral blood, detecting this methylation pattern is a surrogate marker for tumor hypoxia. This can be used to adapt therapy as well. | 2022-08-18 |
20220259678 | Estimating Tumor Purity From Single Samples - The disclosure provides methods for estimating tumor purity from tumor samples without use of matched-normal controls. A set of genomic regions are identified based on a nucleic acid sequence data that is aligned to a reference genome. Each genomic region of the set of genomic regions includes one or more nucleotide-sequence variants relative to a corresponding genomic region of the reference genome. A B-allele frequency distribution for the biological sample is determined based on a B-allele frequency determined for each genomic region of the set of genomic regions. The B-allele frequency distribution is processed using a trained machine-learning model to estimate a metric identifying tumor purity in the biological sample. | 2022-08-18 |
20220259679 | Assays for the Detection of SARS-CoV2 Mutants - An oligonucleotide, having a 5′ terminus and a 3′ terminus, wherein said oligonucleotide is detectably labeled and has a nucleotide sequence that consists essentially of one of the nucleotide sequences selected from SEQ ID NO:5, SEQ ID NO:6, SEQ ID NO:11, SEQ ID NO:12, SEQ ID NO:17, SEQ ID NO:18, SEQ ID NO:23, SEQ ID NO:24, SEQ ID NO:29, SEQ ID NO:30, SEQ ID NO:35, SEQ ID NO:36, SEQ ID NO:41, SEQ ID NO:42, SEQ ID NO:47, SEQ ID NO:48, SEQ ID NO:53, SEQ ID NO:54, SEQ ID NO:59 and SEQ ID NO:60. | 2022-08-18 |
20220259680 | SARS CoV-2 INFECTIVITY DETERMINATION ASSAY - Methods and compositions for characterizing a biological sample (e.g., comprising an infectious agent) from a subject are provided. Methods can include detecting linkage of nucleic acids that are linked in a viable cell or organism but that become degraded and thus unlinked in inviable cells or organisms and then characterizing the subject based on the quantity of linked and unlinked sequences. | 2022-08-18 |
20220259681 | COMPOSITIONS AND METHODS FOR THE SELECTIVE DETECTION OF TUMOR-DERIVED VIRAL DNA - The present disclosure provides methods and compositions of modified oligonucleotide primer and probe combinations, structurally modified with locked nucleic acids, quenchers, and dyes, effective to detect tumor-derived Human Papilloma Virus (HPV) and tumor-derived Epstein-Barr virus (EBV) and, especially, to distinguish viral DNA derived from tumors from viral DNA derived from infectious viral particles. | 2022-08-18 |
20220259682 | Systems, Methods, And Compositions For The Rapid Early-Detection of Host RNA Biomarkers of Infection And Early Identification of COVID-19 Coronavirus Infection in Humans - The current inventive technology is directed to systems, methods, and compositions detection of host signatures of pathogenic infection, and in particular a rapid detection assay configured to detect target RNA transcripts that may be biomarkers of infection. In one embodiment, the invention includes systems, methods and compositions for the early detection of pathogens or infection in an asymptomatic subject through a novel lateral flow assay, which in a preferred embodiment may include a rapid self-administered test strip configured to detect one or more RNA transcript biomarkers produced by a subject's innate immune system in response to a pathogen or infection and present in saliva. | 2022-08-18 |
20220259683 | METHOD FOR PRODUCING SUSTAINABLE LEATHER USING BY-PRODUCTS FROM PARTS OF ALL VARIETIES AND SPECIES OF THE GENUS PERSEA PLANT INCLUDING AMONG THEM BOTH THE AMERICAN SPECIES AND THE HASS VARIETY AS WELL - A method is provided for producing sustainable leather using by-products from parts of all varieties and species of the plant genus | 2022-08-18 |
20220259684 | CARBON-NEGATIVE METALLURGICAL PRODUCTS - Some variations provide a carbon-negative carbon product that is characterized by a carbon intensity less than 0 kg CO | 2022-08-18 |
20220259685 | SEALING A REDUCTION ASSEMBLY - The invention relates to a method for sealing a reduction assembly, wherein the reduction assembly has a product discharge device, wherein the product discharge device is supplied with sealing gas and wherein at least one compressor is provided for delivering prepared sealing gas to the product discharge device, wherein according to the invention, at least one nitrogen generator is provided for producing pure sealing gas, and wherein the sealing gas for supplying to the product discharge device is composed of pure sealing gas from the at least one nitrogen generator or composed of pure sealing gas from the at least one nitrogen generator and of prepared sealing gas from the at least one compressor. The invention also relates to a device with which the method according to the invention is carried out. | 2022-08-18 |
20220259686 | MOLTEN IRON DEPHOSPHORIZATION METHOD - A dephosphorization method using a top and bottom blown converter. This method uses a converter charged with molten iron and slag, to blow an oxygen-containing gas from a top-blowing lance, supply the gas from an inlet of a blowing hole, and supply a control gas from an opening toward an axial center. This method has: a slag top-surface position measurement step, with the top surface of the molten iron measured in advance, measuring an arbitrary position in a top surface of the slag; a slag top-surface difference calculation of slag thickness difference between the measured top-surface positions of the molten iron and the slag; and a jetting condition adjustment step of, using the obtained slag thickness, adjusting a jetting condition of the gas jetted from the top-blowing lance into an appropriate range. The top-blown jetting condition is adjusted by comparing the slag thickness and the depth of a surface depression. | 2022-08-18 |
20220259687 | QUENCHING FIXTURE - A quenching fixture adapted to clamp at least one workpiece is provided. The quenching fixture includes a first positioning component and a second positioning component. Both of the first positioning component and the second positioning component have a positioning surface, multiple protrusions protruding from the positioning surface and a heat dissipation channel disposed between the protrusions in a staggered manner. The positioning surface of the first positioning component faces the positioning surface of the second positioning component, and the protrusions of the first positioning component overlap the protrusions of the second positioning component. The workpiece is clamped between the protrusions of the first positioning component and the protrusions of the second positioning component. | 2022-08-18 |
20220259688 | AUSTENITIC STAINLESS STEEL MATERIAL AND WELDED JOINT - An austenitic stainless steel material is provided that has excellent sensitization resistance properties even after use for a long time period at an average operation temperature of 400 to 700° C. after welding with higher heat input. The steel material of the present disclosure has a chemical composition which contains, in mass %, C: 0.020% or less, Si: 1.50% or less, Mn: 2.00% or less, P: 0.045% or less, S: 0.0300% or less, Cr: 15.00 to 25.00%, Ni: 9.00 to 20.00%, N: 0.05 to 0.15%, Nb: 0.1 to 0.8%, Mo: 0.10 to 4.50%, and W: 0.01 to 1.00%, and satisfies Formula (1). The content of Nb in a residue obtained by an extraction residue method is, in mass %, 0.050 to 0.267%, and the content of Cr in the residue is, in mass %, 0.125% or less. | 2022-08-18 |
20220259689 | COLD ROLLED AND COATED STEEL SHEET AND A METHOD OF MANUFACTURING THEREOF - A cold rolled and coated steel sheet having a composition including of the following elements, expressed in percentage by weight: 0.140%≤Carbon≤0.2%, 1.5%≤Manganese≤2.15%, 0.5%≤Silicon≤0.8%, 0.4%≤Aluminum≤0.8%, 0%≤Phosphorus≤0.09%, 0%≤Sulfur≤0.09%, 0%≤Nitrogen≤0.09%, 0.01%≤Niobium≤0.1%, 0.01%≤Titanium≤0.1%, and can contain one or more of the following optional elements 0%≤Chromium≤0.1%, 0%≤Nickel≤0%, 0%≤Calcium≤0.005%, 0%≤Copper≤2%, 0%≤Molybdenum≤0.5%, 0%≤Vanadium≤0.1%, 0%≤Boron≤0.003%, 0%≤Cerium≤0.1%, 0%≤Magnesium≤0.010%, 0%≤Zirconium≤0.010% the remainder composition being composed of iron and unavoidable impurities caused by processing, the microstructure of the steel sheet including in area fraction, 40 to 60% Inter-critical Ferrite, 25 to 45% Transformed Ferrite, 8% to 20% and 5% to 20% Fresh Martensite, 0 to 10% Bainite, wherein the cumulated amount of Inter-critical and Transformed Ferrite is between 75% and 85%. | 2022-08-18 |
20220259690 | A METHOD FOR MANUFACTURING A STEEL SHEET PRODUCT - A steel sheet product and a method for manufacturing the steel sheet product are described, the method includes the steps:
| 2022-08-18 |
20220259691 | HIGH-STRENGTH STEEL SHEET AND MANUFACTURING METHOD THEREOF - Provided are a high-strength steel sheet and a method for manufacturing same, the high-strength steel sheet including: an alloy system having C, Si, Mn, Cr, Al, Nb, Ti, B, P, S, N, and the remainder of Fe and other inevitable impurities. The contents of C, Si, and Al satisfy equation (1) below. The microstructure includes, by an area fraction, greater than 50% to 70% or less of tempered martensite, and the remainder of residual austenite, fresh martensite, ferrite, and bainite, in which a cementite phase as a second phase is precipitated and distributed in an area fraction of 1-3% between bainite laths, or at a lath on the tempered martensite or grain boundaries. [Equation (1)] [C]+([Si]+[Al])/5≤0.35 wt. % (wherein [C], [Si], and [Al] denote wt % of C, Si, and Al, respectively.) | 2022-08-18 |
20220259692 | HOT-ROLLED STEEL SHEET AND METHOD OF MANUFACTURING SAME - This hot-rolled steel sheet has a predetermined chemical composition, in which a microstructure contains, by area %, bainite: 80.0% or more, ferrite: 10.0% or less, and a remainder in the microstructure: 10.0% or less, a total density of a length L | 2022-08-18 |
20220259693 | METHOD FOR PRODUCING A STEEL PART AND STEEL PART - Method for producing a steel part comprising providing a semi-finished product made of a steel comprising, by weight: 0.35%≤C≤0.60%; 0.15%≤Si≤0.5%; 0.8%≤Mn≤2.0%; 0.0003%≤B≤0.01%; 0.003%≤Mo≤1.0%; 1.0%≤Cr≤2.0%; 0.01%≤Ti≤0.04%; 0.003%≤N≤0.01%; S≤0.015%; P≤0.015%; 0.01%≤Ni≤1.0%; 0.01%≤Nb≤0.1%; optionally 0≤Al≤0.1%; 0≤V≤0.5%; and the remainder consisting of iron and unavoidable impurities. The method further including annealing this semi-finished product at a temperature strictly lower than the Ac1 temperature of the steel; cold forming the semi-finished product into a cold formed product; subjecting the cold formed product to a heat treatment comprising heating the cold formed product to a temperature greater than or equal to the Ac3 temperature of the steel; and holding the product at a holding temperature comprised between 300° C. and 400° C. for a time comprised between 15 minutes and 2 hours. | 2022-08-18 |
20220259694 | SYSTEMS AND PROCESSES FOR RECOVERY OF HIGH-GRADE RARE EARTH CONCENTRATE FROM ACID MINE DRAINAGE - In one aspect, the disclosure relates to a continuous process for treating acid mine drainage while simultaneously recovering a high-grade rare earth preconcentrate suitable for extraction of commercially valuable rare earth oxides. In a further aspect, the preconcentrate is from about 0.1% to 5% rare earth elements on a dry weight basis. In another aspect, the disclosure relates to a method for processing the preconcentrate to generate a pregnant leach solution that does not form gels or emulsions and is suitable for processing via solvent extraction. In another aspect, the disclosure relates to a system and plant for carrying out the disclosed process. In still another aspect, the disclosure relates to a composition containing rare earth elements produced by the process disclosed herein. This abstract is intended as a scanning tool for purposes of searching in the particular art and is not intended to be limiting of the present disclosure. | 2022-08-18 |
20220259695 | SYSTEMS AND METHODS FOR MONITORING METAL RECOVERY SYSTEMS - Various embodiments provide a leaching solution monitoring module comprising a first leaching solution distribution system interface, a flow meter in fluid communication with the first leaching solution distribution system interface, the flow meter in fluid communication a 3-way pressure regulator, and a second leaching solution distribution system interface in fluid communication with the 3-way pressure regulator. | 2022-08-18 |
20220259696 | METALS RECOVERY FROM SPENT CATALYST - An improved method for recovering metals from spent catalysts, particularly from spent slurry catalysts, is disclosed. The method and associated processes comprising the method are useful to recover catalyst metals used in the petroleum and chemical processing industries. The method generally involves a pyrometallurgical method and a hydrometallurgical method and includes forming a soda ash calcine of a caustic leach residue of the spent catalyst containing an insoluble Group VIII/Group VIB/Group VB metal compound combined with soda ash, and extracting and recovering soluble Group VIB metal and soluble Group VB metal compounds from the soda ash calcine. | 2022-08-18 |
20220259697 | METHOD FOR RECOVERING PGM - There is provided a method for recovering PGM, in which at least one base metal oxide selected from a group consisting of copper oxide, iron oxide, tin oxide, nickel oxide and lead oxide is added to and melted in a molten slag, and a PGM alloy contained in the molten slag is recovered. | 2022-08-18 |
20220259698 | METHOD FOR SYNTHESIZING ZIRCONIUM COMPLEX - A method for synthesizing a zirconium complex includes: mixing a solvent containing an organic substance having a dipole moment of 3.0 D or more, a chelating agent solution in which a chelating agent containing a structure represented by General Formula (1) or General Formula (2) is dissolved, and zirconium dissolved in an acidic solution, to obtain a mixed solution; and setting the mixed solution at a predetermined temperature or more to synthesize a zirconium complex. | 2022-08-18 |
20220259699 | RARE EARTH EXTRACTION APPARATUS AND METHOD OF USE THEREOF - The invention comprises an apparatus and method of use thereof for generating a rare earth from a rare earth oxide, comprising the steps of: (1) dissociating the rare earth oxide and hydrogen gas in a reaction chamber by inductively heating the reaction chamber to greater than 2000° K to form the associated rare earth and water vapor in a reaction process; (2) driving the reaction process forward by removing the water vapor from the reaction chamber by condensing and freezing the water vapor on a first cold trap surface as water ice, where the reaction comprises: RE | 2022-08-18 |
20220259700 | MAX PHASE-GOLD COMPOSITES AND METHODS FOR MAKING THE SAME - This disclosure is directed to composites of MAX-phase materials and gold, and methods for preparing the same. | 2022-08-18 |
20220259701 | COPPER ALLOY TROLLEY WIRE - A copper alloy trolley wire is formed of a composition containing Mg in a range of 0.15% by mass or more and 0.50% by mass or less, Cr in a range of 0.25% by mass or more and 1.0% by mass or less, and a Cu balance containing inevitable impurities, in which a tensile strength is 600 MPa or higher and an electrical conductivity is 60% IACS or higher. | 2022-08-18 |
20220259702 | A NICKEL-BASED ALLOY - A nickel-based alloy composition consisting, in weight percent, of: from 17.0% to 21.3% chromium, 7.1% or less cobalt, from 0.9% to 6.3% molybdenum, 4.9% or less tungsten, from 1.8% to 3.2% aluminium, from 1.8% to 4.0% titanium, 3.05% or less tantalum, 3.0% or less niobium, 0.1% or less carbon, from 0.001% to 0.1% boron, from 0.001% to 0.5%. zirconium, 0.02% or less magnesium, 0.5% or less silicon, 0.1% or less yttrium, 0.1% or less lanthanum, 0.1% or less cerium, 0.003% or less sulphur, 0.25% or less manganese, 0.5% or less copper, 0.5% or less hafnium, 0.5% vanadium or less, 10.0% or less iron, the balance being nickel and incidental impurities. | 2022-08-18 |
20220259703 | Fabrication method and the monolithic binary rare-earth-aluminum, REE-Aloy, matrices thereof - This invention relates to a system of monolithic binary rare-earth element (REE)-aluminum (Al) intermetallic alloy series of mass composition range of 30 wt %2022-08-18 | |
20220259704 | LONG-LIFE ALUMINUM ALLOY WITH A HIGH CORROSION RESISTANCE AND HELICALLY GROOVED TUBE PRODUCED FROM THE ALLOY - An aluminium alloy including 1.0-1.5 wt % Mn, up to 0.1 wt % Mg, up to 0.3 wt % Si, up to 0.3 wt % Fe, up to 0.1 wt % Cu, up to 0.25 wt % Cr, up to 0.1 wt % Ni, up to 0.3 wt % Zn, up to 0.1% Ti, up to 0.2 Zr. The allow also includes impurities, each no more than 0.05 wt. % and wherein the total of impurities is no more than 0.15 wt. %, with the balance being aluminum. | 2022-08-18 |
20220259705 | MAGNESIUM ALLOY AND METHOD FOR PRODUCING SAME - The invention relates to a magnesium alloy. To obtain a magnesium alloy which exhibits both a high strength and also a high deformability, a magnesium alloy is provided according to the invention, comprising (in at %) 15.0% to 70.0% lithium, greater than 0.0% aluminum, and magnesium and production-related impurities as a remainder, wherein a ratio of aluminum to magnesium (in at %) is 1:6 to 4:6. The invention also relates to a method for producing the magnesium alloy. | 2022-08-18 |
20220259706 | HIGH-ENTROPY ALLOY FILM AND MANUFACTURING METHOD THEREOF - A high-entropy alloy film, the composition of which includes titanium, zirconium, niobium, tantalum and iron. The high-entropy alloy film is made with a combination of elements with high biocompatibility, and its formation of non-crystalline structure is further improved by adding iron. Furthermore, as the content of titanium in the high-entropy alloy film is adjusted, the microstructure, mechanical properties, and corrosion resistance of the high-entropy alloy film is changed as well. | 2022-08-18 |
20220259707 | ULTRA-CLEAN RARE EARTH STEEL AND OCCLUDED FOREIGN SUBSTANCE MODIFICATION CONTROL METHOD - Provided are an ultra-clean rare earth steel and an occluded foreign substance modification control method, the steel includes 10-200 ppm of rare earth elements, 50% or more occluded foreign substances in the steel are dispersed into RE-oxygen-sulfide with the average equivalent diameter D | 2022-08-18 |
20220259708 | CHROMIUM STEEL SHEET HAVING EXCELLENT CREEP STRENGTH AND HIGH TEMPERATURE DUCTILITY AND METHOD OF MANUFACTURING SAME - Provided are a chromium steel sheet having excellent creep strength and high-temperature ductility, and a method for manufacturing same. The present invention relates to a chromium steel sheet having excellent creep strength and high-temperature ductility comprising, in percentage by weight: C: 0.04 to 0.15%; Si: 0.5% or less (excluding 0%); Mn: 0.1 to 0.6%; S: 0.01% or less (excluding 0%); P: 0.03% or less (excluding 0%); Cr: 1.9 to 2.6%, Mo: 0.05 to 1.5%; W: 1.4 to 2.0%, V: 0.4 to 1.0%; Ni: 0.4% or less (excluding 0%); Nb: 0.10% or less (excluding 0%); Ti: 0.10% or less (excluding 0%); N: 0.015% or less (excluding 0%); Al: 0.06% or less (excluding 0%); B: 0.007% or less (excluding 0%); and the balance being Fe and inevitable impurities. | 2022-08-18 |
20220259709 | SELF-REPAIRING METAL ALLOY MATRIX COMPOSITES, METHODS OF MANUFACTURE AND USE THEREOF AND ARTICLES COMPRISING THE SAME - Disclosed herein is a composite comprising a metal alloy matrix; where the metal alloy matrix comprises aluminum in an amount greater than 50 atomic percent; a first metal and a second metal; where the first metal is different from the second metal; and where the metal alloy matrix comprises a low temperature melting phase and a high temperature melting phase; where the low temperature melting phase melts at a temperature that is lower than the high temperature melting phase; and a contracting constituent; where the contracting constituent exerts a compressive force on the metal alloy matrix at a temperature between a melting point of the low temperature melting phase and a melting point of the high temperature melting phase or below the melting points of the high and low temperature melting phases. | 2022-08-18 |
20220259710 | HIGH STRENGTH DUCTILE 6000 SERIES ALUMINUM ALLOY EXTRUSIONS - An alloy composition is provided. The alloy composition includes silicon (Si) at a concentration of greater than or equal to about 0.55 wt. % to less than or equal to about 0.75 wt. %, magnesium (Mg) at a concentration of greater than or equal to about 0.55 wt. % to less than or equal to about 0.75 wt. %, chromium (Cr) at a concentration of greater than or equal to about 0.15 wt. % to less than or equal to about 0.3 wt. %, and a balance of the alloy composition being aluminum (Al). The alloy composition has an intermetallic phase content of less than or equal to about 3 wt. %. Methods of preparing the alloy composition and of processing the alloy composition are also provided. | 2022-08-18 |
20220259711 | FREE-CUTTING COPPER ALLOY AND METHOD FOR PRODUCING FREE-CUTTING COPPER ALLOY - This free-cutting copper alloy contains Cu: more than 57.5% but less than 64.5%, Si: more than 0.20% but less than 1.20%, Pb: more than 0.001% but less than 0.20%, Bi: more than 0.10% but less than 1.00%, and P: more than 0.001% but less than 0.20%, with the balance being Zn and unavoidable impurities, wherein the total amount of Fe, Mn, Co and Cr is less than 0.45%, the total amount of Sn and Al is less than 0.45%, relationships of 56.3≤f1=[Cu]−4.8×[Si]+0.5×[Pb]+0.5×[Bi]−0.5×[P]≤59.5 and 0.12≤f2=[Pb]+[Bi]<1.0 are satisfied. | 2022-08-18 |
20220259712 | NI-CR-AL CHROMIUM CARBIDE POWDER - Disclosed herein are improved chromium carbide alloy which possess improved properties as related to previous developments. The utilization of aluminum in the alloy can enhance the high temperature oxidation resistance. Embodiments of alloys were designed to simultaneously possess 1) a low liquidus temperature which enables easy atomization on an industrial scale, and 2) a microstructure of a gamma matrix and Cr | 2022-08-18 |
20220259713 | DENTAL AND MEDICAL INSTRUMENTS COMPRISING TITANIUM - Endodontic instruments for use in performing root canal therapy on a tooth are disclosed. In one form, the instruments include an elongate shank having a cutting edge extending from a distal end of the shank along an axial length of the shank. The shank comprises a titanium alloy, and the shank is prepared by heat-treating the shank at a temperature above 25° C. in an atmosphere consisting essentially of a gas unreactive with the shank. In another form, the endodontic instruments have an elongate shank having a cutting edge extending from a distal end of the shank along an axial length of the shank. The shank consists essentially of a titanium alloy selected from alpha-titanium alloys, beta-titanium alloys, and alpha-beta-titanium alloys. The instruments solve the problems encountered when cleaning and enlarging a curved root canal. | 2022-08-18 |
20220259714 | SUPPORT STRIPS AND MASK PLATES - The present application relates to a support strip and a mask plate. The support strip includes a main body, an irregular portion, and a clamped portion. The main body has two sides in a first direction and two ends in a second direction. The irregular portion is disposed on the side of the main body. The clamped portion is disposed on the end of the main body. A first central axis of the main body, a second central axis of the clamped portion, and a first main centroid axis of a support portion all extend along the second direction. The second central axis is located on a side of the first central axis adjacent to the first main centroid axis. The first direction and the second direction are perpendicular to each other, and are parallel to a plane in which a top surface of the main body is located. | 2022-08-18 |
20220259715 | COATED CUTTING TOOL - The present coated cutting tool includes a substrate with a coating including a layer of Ti | 2022-08-18 |
20220259716 | METAL OXIDE FILM, SEMICONDUCTOR DEVICE, AND DISPLAY DEVICE - A metal oxide film containing a crystal part is provided. Alternatively, a metal oxide film with highly stable physical properties is provided. Alternatively, a metal oxide film with improved electrical characteristics is provided. Alternatively, a metal oxide film with which field-effect mobility can be increased is provided. A metal oxide film including In, M (M is Al, Ga, Y, or Sn), and Zn includes a first crystal part and a second crystal part; the first crystal part has c-axis alignment; the second crystal part has no c-axis alignment; and the existing proportion of the second crystal part is higher than the existing proportion of the first crystal part. | 2022-08-18 |
20220259717 | METHOD FOR FORMING A LAYER OF ALUMINA AT THE SURFACE OF A METALLIC SUBSTRATE - A method for forming a layer of alumina on the surface of a metal alloy substrate including aluminium, includes depositing a first aluminium layer on a surface of the metallic substrate, depositing a second layer by vapour-phase deposition on the first layer, the second layer comprising aluminium, a halogen and oxygen, and heat treatment of the substrate coated with the first and second layers under oxidising atmosphere in order to form the layer of alumina at the surface of the metallic substrate. | 2022-08-18 |
20220259718 | THIN-FILM DEPOSITION METHODS WITH THERMAL MANAGEMENT OF EVAPORATION SOURCES - An evaporation system comprises an evaporation chamber having an interior enclosed by one or more chamber walls; an evaporation source comprising (i) a source body for containing a feedstock material, and (ii) an evaporation port fluidly coupling the source body with an interior of the evaporation chamber; an insulation material; and a computer-based controller for configuring the insulation material in (i) a first configuration in which the insulation material is disposed snugly around the source body and (ii) a second configuration in which at least a portion of the insulation material is spaced away from the source body and at least a second portion of the insulation material is disposed snugly around the source body; wherein the insulation material does not cover an opening of the evaporation port in the first configuration and the second configuration. | 2022-08-18 |
20220259719 | ELECTRICALLY AND MAGNETICALLY ENHANCED IONIZED PHYSICAL VAPOR DEPOSITION UNBALANCED SPUTTERING SOURCE - A method of depositing a layer on a substrate includes applying a first magnetic field to a cathode target, electrically coupling the cathode target to a first high power pulse resonance alternating current (AC) power supply, positioning an additional cylindrical cathode target electrode around the cathode, applying a second magnetic field to the additional cylindrical cathode target electrode, electrically coupling the additional cylindrical cathode target electrode to a second high power pulse resonance AC power supply, generating magnetic coupling between the cathode target and an anode, providing a feed gas, and selecting a time shift between negative voltage peaks associated with AC voltage waveforms generated by the first high power pulse resonance AC power supply and the second high power pulse resonance AC power supply. An apparatus includes a vacuum chamber, cathode target magnet assembly, first high power pulse resonance AC power supply, additional electrode, additional electrode magnet assembly, second high power pulse resonance AC power supply, and feed gas. | 2022-08-18 |
20220259720 | SUBSTRATE TEMPERATURE NON-UNIFORMITY REDUCTION OVER TARGET LIFE USING SPACING COMPENSATION - Methods and apparatus for processing a plurality of substrates are provided herein. In some embodiments, a method of processing a plurality of substrates in a physical vapor deposition (PVD) chamber includes: performing a series of reflow processes on a corresponding series of substrates over at least a portion of a life of a sputtering target disposed in the PVD chamber, wherein a substrate-to-target distance in the PVD chamber and a support-to-target distance within the PVD chamber are each controlled as a function of the life of the sputtering target. | 2022-08-18 |
20220259721 | Deposition Processing Systems Having Active Temperature Control and Associated Methods - Several embodiments of the present technology are directed to actively controlling a temperature of a substrate in a chamber during manufacturing of a material or thin film. In some embodiments, the method can include cooling or heating the substrate to have a temperature within a target range, depositing a material over a surface of the substrate, and controlling the temperature of the substrate while the material is being deposited. In some embodiments, controlling the temperature of the substrate can include removing thermal energy from the substrate by directing a fluid over the substrate to maintain the temperature of the substrate within a target range throughout the deposition process. | 2022-08-18 |
20220259722 | SUBSTRATE SURFACE MODIFIER FOR ATOMIC LAYER DEPOSITION AND METHOD FOR MODIFYING SURFACE OF SUBSTRATE USING THE SAME - This invention relates to a surface modifier for uniformly modifying the surface of a substrate such as an inorganic thin film, using atomic layer deposition or chemical vapor deposition, and a method for modifying the surface of a substrate using the same. | 2022-08-18 |
20220259723 | Stain Hiding Fabric With Metallic Coating - This invention relates to a method for hiding stains in medical dressings and other textile substrates. The method includes applying a metallic silver coating to a textile substrate via a plasma enhanced chemical vapor deposition (PECVP) process. The metallic silver coating effectively hides any stain that comes into direct contact with the treated substrate by transferring the liquid beneath the surface of the coating. The invention also relates to textile substrates containing metallic silver coatings. | 2022-08-18 |
20220259724 | Method and Wet Chemical Compositions for Diffusion Barrier Formation - A method of forming a diffusion barrier layer on a dielectric or semiconductor substrate by a wet process. The method includes the steps of treating the dielectric or semiconductor substrate with an aqueous pretreatment solution comprising one or more adsorption promoting ingredients capable of preparing the substrate for deposition of the diffusion barrier layer thereon; and contacting the treated dielectric or semiconductor substrate with a deposition solution comprising manganese compounds and an inorganic pH buffer (optionally, with one or more doping metals) to the diffusion barrier layer thereon, wherein the diffusion barrier layer comprises manganese oxide. Also included is a two-part kit for treating a dielectric or semiconductor substrate to form a diffusion barrier layer thereon. | 2022-08-18 |
20220259725 | SYSTEMS AND METHODS FOR REDUCING EFFLUENT BUILD-UP IN A PUMPING EXHAUST SYSTEM - A method for reducing effluent buildup in a pumping exhaust system of a substrate processing system includes, during a substrate treatment process, arranging a substrate on a substrate support in a processing chamber; supplying one or more process gases to the processing chamber; supplying an inert dilution gas at a first flow rate to the pumping exhaust system; performing the substrate treatment process on the substrate in the processing chamber; evacuating reactants from the processing chamber using the pumping exhaust system. The method includes, after the substrate treatment process, supplying cleaning plasma including cleaning gas in the processing chamber during a cleaning process; and supplying the inert dilution gas at a second flow rate that is less than the first flow rate to the pumping exhaust system during the cleaning process. | 2022-08-18 |
20220259726 | PLASMA IN A SUBSTRATE PROCESSING APPARATUS - A substrate processing apparatus and a related method, including a reaction chamber and a plasma in-feed line where plasma species is introduced into the reaction chamber for a deposition target. The plasma in-feed line includes an inlet part configured to speed up gas velocity. | 2022-08-18 |
20220259727 | SUBSTRATE HEATING DEVICE, SUBSTRATE HEATING METHOD, AND METHOD OF MANUFACTURING SUBSTRATE HEATER - According to embodiments of the present disclosure, a substrate heating device, a substrate heating method, and a method of manufacturing a substrate heater are provided. A substrate heating device for heating a substrate within a processing container configured to perform processing of a substrate therein includes a substrate heater including a placement surface on which the substrate is placed. The substrate heater is configured to heat the substrate placed on the placement surface using a heater. The substrate heating device further includes a jacket provided to cover a bottom portion of the substrate heater via a cooling space and a cooling gas supplier configured to supply a cooling gas to the cooling space. | 2022-08-18 |
20220259728 | PLASMA POLYMERIZATION COATING WITH UNIFORMITY CONTROL - Introduced here is a plasma polymerization apparatus and process. Example embodiments include a vacuum chamber in a substantially symmetrical shape relative to a central axis. A primary rotation shaft may be operable to rotate about the central axis of the vacuum chamber and a secondary rotation shaft may be operable to rotate about a secondary axis distal to the central axis. The primary and secondary rotation shafts may be mechanically connected, and one or more devices may be secured on a platform that rotates along both shafts. Additionally, reactive species discharge mechanisms positioned around a perimeter of the vacuum chamber may be configured to disperse reactive species into the vacuum chamber. The reactive species may form a uniform polymeric multi-layer coating on the surface of the one or more devices. | 2022-08-18 |
20220259729 | DEPOSITION SYSTEM AND DEPOSITION METHOD - A deposition system includes a deposition apparatus configured to deposit a film on a substrate, and a control device. The control device includes a recipe storage unit configured to store a recipe that defines a procedure of a substrate processing process performed by the deposition apparatus, and a processor configured to calculate a predicted value of a change amount from a target value of a control target indicating a film thickness or a film quality of a film deposited in a deposition step included in the substrate processing process, by using log information about the deposition apparatus, the log information being collected from when the substrate processing process based on the recipe starts, and update the recipe based on the predicted value so as to change a value of the control target to approach the target value before the deposition step. | 2022-08-18 |
20220259730 | METHOD - The invention relates to methods for the formation of rare earth nickelate thin films and “doped” (i.e. cation-substituted) variants thereof on a substrate using atomic layer deposition (ALD). The films can be deposited at low temperature (e.g. at temperatures as low as 225° C.) and have a range of useful properties including good crystallinity and high electrical conductivity, as well as interesting magnetic, optic and catalytic properties. These properties make the materials suitable for use in microelectronic applications, in the production of electrodes and as catalytic surfaces. | 2022-08-18 |
20220259731 | SUBSTRATE PROCESSING APPARATUS WITH FLOW CONTROL RING, AND SUBSTRATE PROCESSING METHOD - Examples of a substrate processing apparatus includes a chamber, a susceptor provided in the chamber, a shower head provided above the susceptor, and a flow control ring having a shape to surround the susceptor, the flow control ring having a first top surface and a second top surface that has an annular shape and is provided closer to an inner edge of the flow control ring than the first top surface at a higher level than the first top surface, the second top surface being a sloped surface whose height decreases toward the first top surface. | 2022-08-18 |
20220259732 | FILM FORMATION METHOD AND FILM FORMATION DEVICE - A film formation method for forming a CVD film and an ALD film on a film formation target. In an ALD process, an ALD cycle is repeatedly executed a plurality of times, the ALD cycle including: a first step for filling a reaction container with a source gas introduced through a first supply pipe; a second step for exhausting the source gas from the reaction container; a third step for filling the reaction container with a reactant gas activated by an inductively coupled plasma in a second supply pipe and introduced through the second supply pipe; and a fourth step for exhausting the reactant gas from the reaction container. In a CVD process, the ALD cycle is executed at least once, and the second step is finished while leaving the source gas in a gas phase in the reaction container. | 2022-08-18 |
20220259733 | AN ATOMIC LAYER DEPOSITION APPARATUS - An atomic layer deposition apparatus including an atomic layer deposition reactor and a reactor door. The reactor door is arranged against the end edge of the reactor in a closed position of the reactor. The apparatus having a cooling arrangement for cooling the reactor door having a shell structure surrounding the reactor from the outside of the reactor such that a cooling channel is formed between the shell structure and the at least one side wall of the reactor; a heat exchanger element arranged in the cooling channel in an area of the end edge; and a ventilation discharge connection in connection with the cooling channel provided at a distance from the edge end. | 2022-08-18 |
20220259734 | Reducing Agents for Atomic Layer Deposition - Methods of forming a metal film having a metal halide with a reducing agent are disclosed. The reducing agent, the reducing agent includes a group IV element containing heterocyclic compound, a radical initiator, an alkly alane, a diborene species and/or a Sn(II) compound. | 2022-08-18 |
20220259735 | METAL OXYFLUORIDE FILM FORMATION METHODS - Methods of forming a metal oxyfluoride films are provided. A substrate is placed in an atomic layer deposition (ALD) chamber having a processing region. Flows of zirconium-containing gas, a zirconium precursor gas, for example, Tris(dimethylamino)cyclopentadienyl zirconium, an oxygen-containing gas, a fluorine containing gas, and an yttrium precursor, for example, tris(butylcyclopentadienyl)yttrium gas are delivered to the processing region, where a metal oxyfluoride film such as an yttrium zirconium oxyfluoride film, is formed. | 2022-08-18 |
20220259736 | PROCESSING APPARATUS - A processing apparatus includes: a processing container having a substantially cylindrical shape; a gas supply pipe configured to supply a gas into the processing container; and an exhaust duct extending in a longitudinal direction of the processing container to form an exhaust window configured to exhaust the gas from an interior of the processing container, a first exhaust flow path configured to exhaust, from a first side in a longitudinal direction of the exhaust window, the gas exhausted through the exhaust window, and a second exhaust flow path configured to exhaust, from a second side in the longitudinal direction of the exhaust window, the gas exhausted through the exhaust window, wherein the exhaust duct includes: a first gas introduction part configured to introduce a ballast gas into the first exhaust flow path, and a second gas introduction part configured to introduce the ballast gas into the second exhaust flow path. | 2022-08-18 |
20220259737 | GAS-INLET ELEMENT FOR A CVD REACTOR - A gas outlet surface of a gas inlet element for a CVD reactor or a gas outlet surface of a shielding plate for a gas inlet element has a multiplicity of gas outlet openings arranged around a center of the gas outlet surface. The central points of the gas outlet openings lie at the corner points of polygonal, identically formed cells, each having a geometrical central point. The position and the length of the edges of the cells are defined by intersecting reference lines, the reference lines being assigned to at least two families of lines, and the reference lines of a respective family extending linearly and parallel to one another over an entirety of the gas outlet surface. The center of the gas outlet surface is separated from one of the corner points by one-third±10 percent of the length of one of the edges. | 2022-08-18 |
20220259738 | Substrate Processing Apparatus, Substrate Processing Method, Method of Manufacturing Semiconductor Device and Non-transitory Computer-readable Recording Medium - There is provided a technique capable of improving a processing uniformity between substrates. According to one aspect thereof, a substrate processing apparatus includes: a process vessel having a process region; a first nozzle having first holes, through which a first gas is supplied to substrates, arranged over the entire process region; a second nozzle having second holes, through which a second gas reacting with the first gas is supplied to the substrates, arranged over the entire process region; a third nozzle having third holes, through which an adsorption inhibitory gas inhibiting an adsorption of the first gas is supplied to the substrates, arranged corresponding to a part of the process region; and a gas supply system for supplying the first gas, the second gas and the adsorption inhibitory gas to the substrates through the first nozzle, the second nozzle and the third nozzle, respectively. | 2022-08-18 |
20220259739 | APPARATUS FOR MANUFACTURING SEMICONDUCTOR DEVICE - An apparatus manufactures a semiconductor device. The apparatus includes a film formation device, a first detector and a second detector. The film formation device forms an embedded layer for embedding a trench disposed at a substrate in the semiconductor device. The first detector detects a state of a first region of the substrate where the trench is disposed. The second detector detects a state of a second region of the substrate, the second region disposed outside of the first region. The film formation device ends film formation of the embedded layer, based on a condition that difference between a first detection result corresponding to the state of the first region and a second detection result corresponding to the state of the second region is smaller than or equal to a threshold value. | 2022-08-18 |
20220259740 | SUBSTRATE PROCESSING DEVICE - A substrate processing device capable of detecting a gas leakage includes at least one reactor; a gas supply unit configured to supply a gas to the reactor; and a detection unit connected to the gas supply unit, wherein the detection unit is configured to detect a gas flow in the gas supply unit. | 2022-08-18 |
20220259741 | COMPOSITION, METHOD OF PRODUCING SUBSTRATE, AND POLYMER - A composition includes a polymer and a solvent. The polymer includes a group (X) which is at least one selected from the group consisting of: a group including at least two cyano groups; a group including —B(OR) | 2022-08-18 |
20220259742 | MULTILAYERED NICKEL-PHOSPHORUS COMPOSITE - An electroless composite coating has a layered structure alternating a metallic NiP layer and a composite NiP layer. A system includes the electroless composite coating and a substrate. A method of preparing the coating includes depositing a metallic NiP layer and a composite NiP layer on the substrate. | 2022-08-18 |
20220259743 | PLATING BATH FOR THE ELECTROLESS PLATING OF A SUBSTRATE - A plating bath for electroless plating of a substrate with nickel. The plating bath includes a nickel ion source and a stabilizing system comprising an iodate ion source and a heavy metal ion source. The substrate can be a copper or aluminum substrate. | 2022-08-18 |
20220259744 | COMPOSITION FOR PRODUCING CORROSION RESISTANT ALLOY CLAD METAL PIPES - A composition of an exothermic mixture suitable for a cladding process, comprising at least one transition metal oxide and at least one fuel, wherein the fuel is at least a binary mixture selected from the group of aluminium, calcium, magnesium or silicon. The invention is furthermore directed to a process for producing corrosion resistant alloy clad metal pipes by loading and distributing the exothermic mixture to one or more pipes in a clad assembly, followed by igniting the exothermic mixture and applying a post cladding pipe procedure. | 2022-08-18 |
20220259745 | MODULAR ELECTROLYZER STACK AND PROCESS TO CONVERT CARBON DIOXIDE TO GASEOUS PRODUCTS AT ELEVATED PRESSURE AND WITH HIGH CONVERSION RATE - An electrolyzer cell, electrolyzer setup, and related methods are provided for converting gaseous carbon dioxide to gas-phase products at elevated pressures with high conversion rates via electrolysis performed by the electrolyzer cell ( | 2022-08-18 |
20220259746 | A METHOD FOR EFFICIENT ELECTROCATALYTIC SYNTHESIS OF PURE LIQUID PRODUCT SOLUTIONS INCLUDING H2O2, OXYGENATES, AMMONIA, AND SO ON - A porous solid electrolyte electrosynthesis cell and corresponding related process for the direct synthesis of high purity liquid products wherein the electrosynthesis cell comprises a cathode compartment including a cathode electrode comprising a gas diffusion layer loaded with a selective reduction reaction electrocatalyst for specific reduction reactions. The electrosynthesis cell further includes an anode compartment including an anode electrode comprising a gas diffusion layer loaded with a catalyst for oxidation reactions; and a solid electrolyte compartment comprising a porous solid electrolyte; a cation exchange membrane; and an anion exchange membrane; (or two cation exchange membranes) wherein the solid electrolyte compartment is separated from the cathode and the anode by the anion exchange membrane and the cation exchange membrane (or by the two cation exchange membranes). | 2022-08-18 |
20220259747 | Electrolytic Ozone Generator - An electrolytic ozone generator comprises a cavity, and electrodes and a membrane disposed in the cavity. The electrodes comprise an anode and a cathode. A water inlet and a water outlet are formed in two ends of the cavity respectively. The membrane has a side face parallel and opposite to the anode and a side face parallel and opposite to the cathode. An annular guide channel is formed between a periphery of the anode, the cathode and the membrane, and an inner wall of the cavity. A water distribution space is formed between the water inlet and the electrode at the water inlet end, and is communicated with the annular guide channel and the through holes in the electrode at the water inlet end. The anode and the cathode are electrically connected through water flowing therethrough. The ozone generator can increase the ozone concentration in water. | 2022-08-18 |
20220259748 | ELECTROCATALYST FOR WATER ELECTROLYSIS AND PREPARING METHOD OF THE SAME - The present application relates to an electrode catalyst for water electrolysis including a first transition metal foam, a metal layered double hydroxide (LDH)/metal oxide mixed layer which contains a second transition metal and a third transition metal that are formed on the surface of the first transition metal foam, and fourth transition metal oxyhydroxide nanoparticles formed on the surface of the mixed layer, in which the mixed layer surface contains the metal layered double hydroxide. | 2022-08-18 |
20220259749 | NICKEL-IRON CATALYTIC MATERIAL, PREPARATION METHOD THEREFOR, AND USE THEREOF IN HYDROGEN PRODUCTION THROUGH WATER ELECTROLYSIS AND PREPARATION OF LIQUID SOLAR FUEL (LSF) - A nickel-iron catalytic material, a preparation method thereof, and a use thereof in the hydrogen production through water electrolysis and the preparation of a liquid solar fuel (LSF) are provided. The nickel-iron catalytic material is prepared by using a soluble iron salt as a raw material and growing on a modified nickel substrate under mild conditions, and the nickel-iron catalytic material can be used in the industrial alkaline water electrolysis under harsh conditions. The nickel-iron catalytic material includes a nickel metal substrate and a catalytically-active layer with iron and nickel. When used to promote a water splitting reaction, the nickel-iron catalytic material can reduce the energy consumption per m | 2022-08-18 |
20220259750 | CATALYST FOR OXYGEN GENERATION REACTION DURING WATER ELECTROLYSIS - The invention relates to a method for preparing a catalyst composition, wherein in an aqueous medium containing an iridium compound, at a pH 9, an iridium-containing solid is deposited on a support material, and the support material loaded with the iridium-containing solid is separated from the aqueous medium and dried, wherein, in the method, the support material loaded with the iridium-containing solid is not subjected to a thermal treatment at a temperature of more than 250° C. for a period of time of longer than 1 hour. | 2022-08-18 |
20220259751 | A Separator for Alkaline Water Electrolysis - A separator for alkaline water electrolysis ( | 2022-08-18 |
20220259752 | SUSTAINABLE, FACILE SEPARATION OF THE MOLTEN CARBONATE ELECTROLYSIS CATHODE PRODUCT - A process for the separation of electrolyte from the carbon in a solid carbon/electrolyte cathode product formed at the cathode during molten carbonate electrolysis. The processes allows for easy separation of the solid carbon product from the electrolyte without any observed detrimental effect on the structure and/or stability of the resulting solid carbon nanomaterial. | 2022-08-18 |
20220259753 | COMPOSITE PLATED PRODUCT AND METHOD FOR PRODUCING SAME - There are provided a composite plated product wherein a composite plating film of a composite material containing carbon particles in a silver layer is formed on a base material and wherein the amount of the carbon particles dropped out of the composite plating film is small, and a method for producing the same. After a composite plating film of a composite material containing carbon particles in a silver layer is formed on a base material (of preferably copper or a copper alloy) by electroplating using a silver-plating solution to which the carbon particles are added, a treatment for removing part of the carbon particles on the surface thereof is carried out. | 2022-08-18 |
20220259754 | TWINNED COPPER LAYER, SUBSTRATE HAVING THE SAME AND METHOD FOR PREPARING THE SAME - A twinned copper layer is disclosed, wherein 35% or more in volume of the twinned copper layer comprises plural twinned grains, 30% or more of the twinned grains are flake twinned grains, and a ratio of a length to a thickness of at least a part of the flake twinned grains is greater than or equal to 2. In addition, a substrate having the aforesaid twinned copper layer and a method for preparing the aforesaid twinned copper layer are also disclosed. | 2022-08-18 |
20220259755 | COATED DISCRETE METALLIC PARTICLES AND MULTILAYER STRUCTURES COMPRISING REFLECTIVE CORE LAYERS - A discrete metallic particle having a metallic material, and a coating covering at least a portion of the metallic component. The discrete metallic particle has a thickness from 50 nm to 1000 nm, and the discrete metallic particle has a skin depth δ of greater than or equal to 1.0 μm in a frequency range from 20-40 GHz. The skin depth δ is calculated by: | 2022-08-18 |
20220259756 | FLUID RECOVERY IN SEMICONDUCTOR PROCESSING - Exemplary electroplating apparatuses may include a system head operable to clamp a substrate. The system head may be operable to raise and lower the substrate between a plating bath, a first position above the plating bath, and a second position above the first position. The electroplating apparatuses may include a plating bath vessel adapted to hold the plating bath for electroplating on the substrate. The electroplating apparatuses may include a weir extending about the plating bath vessel. The electroplating apparatuses may include a first nozzle extending through the weir at a first radial position, and positioned to deliver fluid to the substrate at the first position above the plating bath. The electroplating apparatuses may include a second nozzle extending through the weir at a second radial position, and positioned to deliver fluid to the substrate at the second position above the plating bath. | 2022-08-18 |
20220259757 | SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, MANUFACTURING METHOD FOR SILICON INGOT, AND SOLAR CELL - An ingot having a first surface, a second surface opposite to the first surface, and a third surface connecting the first surface and the second surface in a first direction includes a first mono-like crystalline portion, a first intermediate portion including a mono-like crystalline section, a second mono-like crystalline portion, a second intermediate portion including a mono-like crystalline section, and a third mono-like crystalline portion. The first mono-like crystalline portion, the first intermediate portion, and the second mono-like crystalline portion are adjacent to one another in sequence in a second direction perpendicular to the first direction. The first mono-like crystalline portion, the second intermediate portion, and the third mono-like crystalline portion are adjacent to one another in sequence in a third direction perpendicular to the first direction and crossing the second direction. The first mono-like crystalline portion and the second mono-like crystalline portion have a greater width than the first intermediate portion in the second direction. The first mono-like crystalline portion and the third mono-like crystalline portion have a greater width than the second intermediate portion in the third direction. Boundaries between the first mono-like crystalline portion and the first intermediate portion and between the second mono-like crystalline portion and the first intermediate portion, and boundaries between the first mono-like crystalline portion and the second intermediate portion and between the third mono-like crystalline portion and the second intermediate portion each include a coincidence boundary. | 2022-08-18 |
20220259758 | A METHOD OF CONTROLLED N-DOPING OF GROUP III-V MATERIALS GROWN ON (111) SI - The present invention is related to a method of providing n-doped group III-V materials grown on (111) Si, and especially to a method comprising steps of growth of group III-V materials interleaved with steps of no growth, wherein both growth steps and no growth steps are subject to a constant uninterrupted arsenic flux concentration. | 2022-08-18 |
20220259759 | CONTAINER MADE OF SIC - Disclosed is a SiC container ( | 2022-08-18 |
20220259760 | MANUFACTURING DEVICE FOR SIC SEMICONDUCTOR SUBSTRATE - A manufacturing device of SiC semiconductor substrates includes a SiC container ( | 2022-08-18 |
20220259761 | Method for Growing Rare Earth Oxide Crystal - In an embodiment method for growing a rare earth oxide crystal, a surface of a Si substrate is cleaned by carrying out treatments using chemical solutions such as a mixed sulfuric acid-hydrogen peroxide solution, hot nitric acid, or diluted hydrofluoric acid several times to remove impurities on the surface of the Si substrate. A silicon oxide layer including amorphous SiO | 2022-08-18 |
20220259762 | METHOD FOR PULLING A SINGLE CRYSTAL OF SILICON IN ACCORDANCE WITH THE CZOCHRALSKI METHOD - Single silicon crystals having a resistivity of ≤20 mΩcm are pulled by the Czochralski process from a melt, by a method of pulling a first section of a neck at a first velocity whereby the diameter of a first section of the neck, with respect to the diameter of a seed crystal, tapers at a rate of ≤0.3 mm per mm neck length to a diameter of not more than 5 mm;
| 2022-08-18 |
20220259763 | METHODS AND SYSTEMS OF CAPTURING TRANSIENT THERMAL RESPONSES OF REGIONS OF CRYSTAL PULLERS - A system for producing a silicon ingot, the system includes a crystal puller, a pyrometer, an infrared (IR) camera, and a controller. The crystal puller includes a hot zone having one or more components therein, and in which a silicon ingot may be pulled. The pyrometer is positioned to view a region of interest within the hot zone. The IR camera is positioned to view one or more additional regions of interest within the hot zone. The controller is connected to the crystal puller, the pyrometer, and the IR camera. The controller is programmed to control the crystal puller to produce a silicon ingot, receive temperature data of the region of interest within the hot zone from the pyrometer while producing the silicon ingot, and receive IR images of the one or more additional regions of interest from the IR camera while producing the silicon ingot. | 2022-08-18 |
20220259764 | SiC EPITAXIAL WAFER, PRODUCTION METHOD THEREFOR, AND DEFECT IDENTIFICATION METHOD - A SiC epitaxial wafer in which a SiC epitaxial layer is formed on a 4H—SiC single crystal substrate having an off angle and a substrate carbon inclusion density of 0.1 to 6.0 inclusions/cm | 2022-08-18 |
20220259765 | NITRIDE CRYSTAL, SEMICONDUCTOR LAMINATE, AND METHOD FOR MANUFACTURING NITRIDE CRYSTAL - An object is to improve quality of a nitride crystal. A crystal represented by a composition formula In | 2022-08-18 |
20220259766 | INDIUM-GALLIUM-NITRIDE LIGHT EMITTING DIODES WITH INCREASED QUANTUM EFFICIENCY - Exemplary methods of forming a semiconductor structure may include forming a nucleation layer on a semiconductor substrate. The exemplary methods may further include forming at least one gallium nitride (GaN)-containing region on the nucleation layer, and forming an indium-gallium-nitride (InGaN)-containing layer on the GaN-containing region. A porosified region may be formed on a portion of at least one of the GaN-containing region and the InGaN-containing layer, and an active region may be formed on the porosified region. In embodiments, the porosified region may be characterized by a void fraction of greater than or about 20 vol. %. In further embodiments, the active region may include a greater mole percentage (mol. %) indium than the porosified region or the GaN-containing region. In still further embodiments, the active region may characterized by a peak light emission at a wavelength of greater than or about 620 nm. | 2022-08-18 |
20220259767 | CARBON-DOPED SILICON SINGLE CRYSTAL WAFER AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a carbon-doped silicon single crystal wafer, including steps of: preparing a silicon single crystal wafer not doped with carbon; performing a first RTA treatment on the silicon single crystal wafer in an atmosphere containing compound gas; performing a second RTA treatment at a higher temperature than the first RTA treatment; cooling the silicon single crystal wafer after the second RTA treatment; and performing a third RTA treatment. The crystal wafer is modified to a carbon-doped silicon single crystal wafer, sequentially from a surface thereof: a 3C-SiC single crystal layer; a carbon precipitation layer; a diffusion layer of interstitial carbon and silicon; and a diffusion layer of vacancy and carbon. A carbon-doped silicon single crystal wafer having a surface layer with high carbon concentration and uniform carbon concentration distribution to enable wafer strength enhancement; and a method for manufacturing the carbon-doped silicon single crystal wafer. | 2022-08-18 |
20220259768 | MULTIVALENT CHLOROTOXIN CHIMERIC ANTIGEN RECEPTORS - Described are γδ T-cells that express a multivalent CLTX-CAR and also express a survival factor, a population of the γδ T-cells that express a multivalent CLTX-CAR and the survival factor, pharmaceutical compositions thereof, and methods of treating cancer or a tumor in a subject comprising administering to a subject an effective amount of the multivalent CLTX-CAR γδ T-cells and co-administering a chemotherapeutic agent, e.g., the chemotherapeutic agent to which the survival factor confers resistance. | 2022-08-18 |