32nd week of 2010 patent applcation highlights part 15 |
Patent application number | Title | Published |
20100200802 | OXIDATION-STABILIZED CMP COMPOSITIONS AND METHODS - The present invention provides a chemical-mechanical polishing (CMP) composition comprising an amino compound, a radical-forming oxidizing agent, a radical trapping agent capable of inhibiting radical-induced oxidation of the amino compound, and an aqueous carrier therefore. The radical trapping agent is a hydroxyl-substituted polyunsaturated cyclic compound, a nitrogenous compound, or a combination thereof. Optionally, the composition comprises a metal oxide abrasive (e.g., silica, alumina, titania, ceria, zirconia, or a combination of two or more of the foregoing abrasives). | 2010-08-12 |
20100200803 | Surface-Modified, Pyrogenically Prepared Silicas - Surface-modified, pyrogenically prepared silica is prepared by subjecting the pyrogenically prepared silica, which is in the form of aggregates of primary particles having a BET surface area of 300±25 m | 2010-08-12 |
20100200804 | Oxidation System with Sidedraw Secondary Reactor - Disclosed is an optimized process and apparatus for more efficiently and economically carrying out the liquid-phase oxidation of an oxidizable compound. Such liquid-phase oxidation is carried out in a bubble column reactor that provides for a highly efficient reaction at relatively low temperatures. When the oxidized compound is para-xylene and the product from the oxidation reaction is crude terephthalic acid (CTA), such CTA product can be purified and separated by more economical techniques than could be employed if the CTA were formed by a conventional high-temperature oxidation process. | 2010-08-12 |
20100200805 | METHOD AND APPARATUS FOR PROCESSING VEGETABLE OILS - The present invention provides certain improvements in methods for processing vegetable oils and apparatus for carrying out such methods. One embodiment provides a method for processing a partially processed oil including glycerides and a volatilizable impurity fraction. The partially processed oil may processed by driving off a first volatiles stream comprising a portion of the glycerides and at least a portion of the volatilizable impurity fraction, leaving a deodorized oil. The first volatiles stream may be introduced into a first condensing chamber and a glyceride-rich, impurity-poor first condensate may be condensed from the first volatiles stream, leaving a glyceride-poor, impurity-rich second volatiles stream. The second volatiles stream may be passed into a second condensing chamber and a glyceride-poor, impurity-rich second condensate may be condensed from the second volatiles stream. | 2010-08-12 |
20100200806 | SACCHARIFYING BIOMASS - Biomass feedstocks (e.g., plant biomass, animal biomass, and municipal waste biomass) are processed to produce useful products, such as fuels. For example, systems are described that can convert feedstock materials to a sugar solution, which can then be fermented to produce ethanol. | 2010-08-12 |
20100200807 | Composition - A process for the production of a bleach activator granule comprises the extrusion of a bleach activator composition. The composition comprises a bleach activator, a water swellable carbohydrate and water. | 2010-08-12 |
20100200808 | NANOSCALE PHOSPHOR PARTICLES WITH HIGH QUANTUM EFFICIENCY AND METHOD FOR SYNTHESIZING THE SAME - Described herein are batches of nanoscale phosphor particles having an average particle size of less than about 200 nm and an average internal quantum efficiency of at least 40%. The batches of nanoscale phosphor particles can be substantially free of impurities. Also described herein are methods of manufacturing the nanoscale phosphor particles by passing phosphor particles through a reactive field to thereby dissociate them into elements and then synthesizing nanoscale phosphor particles by nucleating the elements and quenching the resulting particles. | 2010-08-12 |
20100200809 | METHOD OF ENRICHING A GASEOUS EFFLUENT WITH ACID GAS - The present invention relates to a method of enriching a gaseous effluent with acid compounds, comprising the following stages:
| 2010-08-12 |
20100200810 | SOLID FUEL VOLATILIZATION TO PRODUCE SYNTHESIS GAS - A method comprising contacting a carbon and hydrogen-containing solid fuel and a metal-based catalyst in the presence of oxygen to produce hydrogen gas and carbon monoxide gas, wherein the contacting occurs at a temperature sufficiently high to prevent char formation in an amount capable of stopping production of the hydrogen gas and the carbon monoxide gas is provided. In one embodiment, the metal-based catalyst comprises a rhodium-cerium catalyst. Embodiments further include a system for producing syngas. The systems and methods described herein provide shorter residence time and high selectivity for hydrogen and carbon monoxide. | 2010-08-12 |
20100200811 | Method for Making Hydrogen Using a Gold Containing Water-Gas Shift Catalyst - The present invention relates to a method for oxidizing CO, comprising: passing a first feed comprising CO and a second feed comprising oxygen, in an oxidation zone, over a catalyst comprising highly dispersed gold on sulfated zirconia, at oxidation conditions, to produce an effluent comprising a lower level of CO than in the first feed. | 2010-08-12 |
20100200812 | PRODUCTION METHOD FOR RAW GAS FOR AMMONIA SYNTHESIS AND PRODUCTION APPARATUS THEREFOR - There is provided a method for producing a raw gas for ammonia synthesis in which light hydrocarbons from a tube | 2010-08-12 |
20100200813 | SEMICONDUCTOR NANOCRYSTALS - The present invention aims to provide a method of use for surface-modifying a semiconductor nanocrystal comprising at least the steps consisting in having a semiconductor nanocrystal, the organic coating layer of which is provided, at the outer surface of the nanocrystal, with at least one reactive group G1 that reacts according to a cycloaddition reaction of click chemistry type; and bringing said nanocrystal together with an adjoining material provided at the surface with at least one G2 group complementary to the G1 group with respect to said click chemistry reaction, under conditions favourable to the interaction of said G1 and G2 groups, characterized in that said G1 and G2 groups are respectively an azide and a strained cycloalkynyl radical, or vice versa. | 2010-08-12 |
20100200814 | SEMICONDUCTIVE RUBBER COMPOSITION AND SEMICONDUCTIVE RUBBER ROLLER EMPLOYING THE SAME - The semiconductive rubber composition according to the present invention contains: a rubber content containing at least copolymer rubber containing ethylene oxide as a copolymeric component and chloroprene rubber; and not less than 0.5 parts by mass and not more than 1.5 parts by mass of a thiourea-based vulcanization accelerator, not less than 0.5 parts by mass and not more than 1.5 parts by mass of a guanidine-based vulcanization accelerator and not less than 0.5 parts by mass and not more than 2.0 parts by mass of a peroxide-based crosslinking agent with respect to 100 parts by mass of the sum of the rubber content. | 2010-08-12 |
20100200815 | ELECTRICALLY CONDUCTIVE COMPOSITION FOR VIA-HOLES - The present invention relates to an electrically conductive composition for filling via-holes formed in an electronic circuit substrate containing an electrically conductive metal and a vehicle, wherein the content of the electrically conductive metal is 57 vol % or more, and the composition is a plastic fluid for which fluidity increases when external pressure is applied to the composition. | 2010-08-12 |
20100200816 | DIELECTRIC ELASTOMER COMPOSITION AND HIGH-FREQUENCY ELECTRONIC COMPONENT MATERIAL - It is an object of the present invention to provide a dielectric elastomer composition which has a sufficient dielectric property as a high-frequency electronic component material and to which an excellent flame retardance can be imparted as necessary in consideration of an influence on environment and the high-frequency electronic component material formed by molding the dielectric elastomer composition. The dielectric elastomer composition of the present invention comprises an elastomer to which (A) carbon black and (B) at least one powder selected from among magnesium hydroxide powder and dielectric ceramic powder is added. An average particle diameter of the carbon black is 50 to 200 nm, and 5 to 40 parts by weight thereof is added to 100 parts by weight of the elastomer. In the magnesium hydroxide powder, a content of ferric oxide is not more than 0.02 wt %. In at least one measuring condition selected from among a measuring condition (1) in which a frequency is 400 MHz and a temperature is 30° C. and a measuring condition (2) in which a frequency is 5 GHz and a temperature is 25° C., a dielectric constant is not less than three, and a dielectric dissipation factor is not more than 0.01. | 2010-08-12 |
20100200817 | POSITIVE TEMPERATURE COEFFICIENT POLYMER COMPOSITION AND MATERIAL MADE THEREFROM - A positive temperature coefficient polymer composition includes a polymer system and a conductive particulate filler. The polymer system includes a non-ionic copolymer of a substituted or non-substituted olefin monomer and an anhydride monomer. The olefin monomer and the anhydride monomer form a linear polymer chain. | 2010-08-12 |
20100200818 | Electrochromic pani films and process thereof - A method of manufacturing an electrochromic polyaniline thin film changeable in color in dependency upon the supply of electricity is provided. The method comprises the steps of polymerizing aniline monomer into polyaniline polymer, separating the polyaniline polymer, liquefying the separated polyaniline polymer into a dispersing solution using a mixed surfactant, and dissolving an UV curing adhesive in the dispersing solution, whereby the polyaniline thin film has the ductility and improved adhesion force for an electric substrate, so that it is applicable to development of a flexible display and as a next generation hi-tech material. | 2010-08-12 |
20100200819 | FLAME RETARDANT COMPOSITION - The invention relates to a flame retardant composition, particularly designed for fire fighting with aerial means. The retardant composition comprises a liquid ammonium polyphosphate of chain length with a value of n between 2 and 3, n being the number of condensation groups, and an ammonium polyphosphate in powder form in suspension, with a chain length with a value of n between 100 and 1500. In addition to the above, the flame retardant composition comprises corrosion inhibitors, in particular zinc orthophosphate dihydrate, and at least one surfactant agent as wetting agent or dispensing agent, an organic or inorganic thickening agent and at least one colouring agent. | 2010-08-12 |
20100200820 | Shrub Remover - In some embodiments, a shrub removing apparatus may include one or more of the following features: (a) a chain segment having a chain link, (b) a barb coupled to the chain link, (c) a first circular ring coupled to the chain segment at a proximal end, and (d) a second circular ring coupled to the chain segment at a distal end. | 2010-08-12 |
20100200821 | DUAL CAPSTAN PULLER AND METHOD - A puller is provided with a number of advantages. Pullers are described that have a high power to weight ratio, and a high power to volume ratio. Examples of pullers and pulling systems include harmonic drive gear reduction elements and configurations that provide high cable friction in a small device volume. Examples of pullers and pulling systems also include constant force pulling which is desirable in particular for small diameter pipe replacement. Using pullers and pulling systems as described, minimally invasive pipe replacement operations are possible. Reversible pullers are also provided that decrease the amount of time needed to burst or split multiple segments of pipe. | 2010-08-12 |
20100200822 | Vehicle-mountable hoist - Embodiments include an apparatus comprising a first part to be removably secured to a receiver hitch of a vehicle. The first part is removably integrated with a boom receiver. The boom receiver can be removably connected to a boom extending upward at an angle from the first part. An electric powered winch can be attached to the boom receiver. The winch includes a cable to hang down from the boom. Coupled to the cable is a device to connect an object to be moved by the apparatus. | 2010-08-12 |
20100200823 | GROUND-COVERING APPARATUS - Ground-covering apparatus, e.g., for covering a ground surface around fixtures and fences and/or for protecting a lower portions of fixtures. | 2010-08-12 |
20100200824 | Fence Panel Interlock - A plurality of interlocking panels is provided. A panel assembly comprises a plurality of generally rectangular panel members assembled in interlocking relationship. Each panel member has a substantially flat planar main body and two side edges that interconnect with adjacent panel members. After the panels are interlocked together, the interlocking components on the inner walls of the side edges are covered by the smooth outer walls of the side edges. The panels may be used to fabricate a fence. | 2010-08-12 |
20100200825 | RACKABLE WOOD PRIVACY FENCE PANEL - A fence panel includes a pair of end caps and a pair of rails extending between the end caps. Each rail includes a longitudinally extending groove. A plurality of pickets extend between each pair of rails and are retained within the grooves. Each picket has an end with an end feature formed therein which permits the pickets to cant in the grooves during racking of the fence panel. In an implementation, the pickets are formed from short boards, with separate boards on each row providing the illusion of one solid board running top to bottom for each picket while not requiring a single continuous length board. Alternatively, the pickets are formed of longer boards providing one board running from top to bottom. The short boards for the pickets can be made from lumber mill board “shorts” or “drops,” or alternatively made from recycled fencing materials. The shorts can be joined end to end to form longer boards. | 2010-08-12 |
20100200826 | FENCE POST ASSEMBLIES - A fence post assembly ( | 2010-08-12 |
20100200827 | FENCE/RAIL ASSEMBLY WITH CONCEALED SLIDING, PIVOTAL CONNECTION, AND MANUFACTURING METHOD THEREFOR - A fencing/railing assembly adapted to be positioned between a pair of posts and mounted thereto. The assembly includes a plurality of pickets, a plurality of rails extending transverse to the pickets, and one or more pivoting, sliding connectors for connecting a picket to a rail, with the sliding, pivotal connection concealed by the rail. The connector is slidably mounted to the rail and is pivotally connected to the picket. The sliding, pivotal connection allows the pickets to be oriented at greater angles relative to the rails (i.e. it allows the assembly to rack to a greater degree, thereby allowing the fencing/raining to following more-steeply changing terrain or contours). In one embodiment, an elongated connector strip is concealed by the rail and spans multiple pickets. In another embodiment, the assembly includes a plurality of shorter connectors, one for each picket/rail connection. | 2010-08-12 |
20100200828 | SOLID MEMORY - In one embodiment of the present invention, recording and erasing of data in PRAM have hitherto been performed based on a change in physical characteristics caused by primary phase-transformation of a crystalline state and an amorphous state of a chalcogen compound including Te which serves as a recording material. Since, however, a recording thin film is formed of a polycrystal but not a single crystal, a variation in resistance values occurs and a change in volume caused upon phase-transition has placed a limit on the number of times of readout of record. In one embodiment, the above problem is solved by preparing a solid memory having a superlattice structure of thin films including Ge and thin films including Sb. The solid memory can realize the number of times of repeated recording and erasing of 10 | 2010-08-12 |
20100200829 | Semiconductor Phase Change Memory Using Multiple Phase Change Layers - In accordance with some embodiments, a phase change memory may be formed in which the thermal conductivity in the region outside the programmed volume of phase change material is reduced. This may reduce the power consumption of the resulting phase change memory. The reduction in power consumption may be achieved by forming distinct layers of phase change material that have little or no mixing between them outside the programmed volume. For example, in one embodiment, a diffusion barrier layer may be maintained between the two distinct phase change layers. In another embodiment, a face centered cubic chalcogenide structure may be utilized. | 2010-08-12 |
20100200830 | MEMORY DEVICE HAVING SELF-ALIGNED CELL STRUCTURE - Some embodiments include apparatus and methods having a memory device with diodes coupled to memory elements. Each diode may be formed in a recess of the memory device. The recess may have a polygonal sidewall. The diode may include a first material of a first conductivity type (e.g., n-type) and a second material of a second conductive type (e.g., p-type) formed within the recess. | 2010-08-12 |
20100200831 | Non-volatile memory devices and methods of fabricating the same - Non-volatile memory devices including a lower electrode formed on a substrate; an active memory material formed on the lower electrode; an upper electrode formed on the active memory material; and an adhesive layer formed in part of a region between the active memory material and the upper electrode. | 2010-08-12 |
20100200832 | RESISTANCE VARIABLE ELEMENT - A resistance variable device is provided, which is capable of making a bipolar operation based on a predetermined operation principle. The resistance variable device is usable as a storage device. The resistance variable device has a laminated structure which include, for example, a first electrode, a second electrode, and a hole conductive layer between the first and second electrodes. The hole conductive layer gives anions to the second electrode, thereby changing its state from a reference electric field state to a positive electric field state. The hole conductive layer also receives anions from the second electrode, thereby changing its state from the positive electric field state to the reference electric field state. | 2010-08-12 |
20100200833 | SEMICONDUCTOR DEVICE INCLUDING UNIFORM CONTACT PLUGS AND A METHOD OF MANUFACTURING THE SAME - A semiconductor device, a semiconductor module, an electronic apparatus and methods of fabricating and manufacturing the same are provided. The semiconductor device includes a lower interconnection formed on a substrate, a plurality of control patterns formed on the lower interconnection, a plurality of lower contact plug patterns formed on the control patterns, a plurality of storage patterns formed on the lower contact plug patterns, a plurality of upper electrodes formed on the storage patterns, and a plurality of upper interconnections formed on the upper electrodes. The lower contact plug patterns each include at least two contact holes having different sizes, a plurality of sidewall patterns formed on inner sidewalls of the two contact holes and wherein the sidewall patterns have different thicknesses from one another. The semiconductor device further includes a plurality of electrode patterns conformably formed on the inside of the sidewall patterns and having size errors less than 10%, and a plurality of filling patterns formed inside the electrode patterns and completely filling the inside of the contact holes. | 2010-08-12 |
20100200834 | Crystalline nanowire substrate, method of manufacturing the same, and method of manufacturing thin film transistor using the same - Example embodiments relate to a crystalline nanowire substrate having a structure in which a crystalline nanowire film having a relatively fine line-width may be formed on a substrate, a method of manufacturing the same, and a method of manufacturing a thin film transistor using the same. The method of manufacturing the crystalline nanowire substrate may include preparing a substrate, forming an insulating film on the substrate, forming a silicon film on the insulating film, patterning the insulating film and the silicon film into a strip shape, reducing the line-width of the insulating film by undercut etching at least one lateral side of the insulating film, and forming a self-aligned silicon nanowire film on an upper surface of the insulating film by melting and crystallizing the silicon film. | 2010-08-12 |
20100200835 | FABRICATION OF GERMANIUM NANOWIRE TRANSISTORS - In general, in one aspect, a method includes using the Germanium nanowire as building block for high performance logic, memory and low dimensional quantum effect devices. The Germanium nanowire channel and the SiGe anchoring regions are formed simultaneously through preferential Si oxidation of epitaxial Silicon Germanium epi layer. The placement of the germanium nanowires is accomplished using a Si fin as a template and the germanium nanowire is held on Si substrate through SiGe anchors created by masking the two ends of the fins. High dielectric constant gate oxide and work function metals wrap around the Germanium nanowire for gate-all-around electrostatic channel on/off control, while the Germanium nanowire provides high carrier mobility in the transistor channel region. The germanium nanowire transistors enable high performance, low voltage (low power consumption) operation of logic and memory devices. | 2010-08-12 |
20100200836 | NANOPARTICLE POSITIONING TECHNIQUE - Embodiments of the present invention are generally directed to a method for disposing nanoparticles on a substrate. In one embodiment, a substrate having a plurality of recesses is provided. In this embodiment, a plurality of nanoparticles is also provided. The nanoparticles include a catalyst material coupled to one or more ligands, and these nanoparticles are disposed within respective recesses of the substrate. In some embodiments, the substrate is processed to form nanostructures, such as nanotubes or nanowires, within the recesses. Devices and systems having such nanostructures are also disclosed. | 2010-08-12 |
20100200837 | Dual sided processing and devices based on freestanding nitride and zinc oxide films - Thin freestanding nitride films are used as a growth substrate to enhance the optical, electrical, mechanical and mobility of nitride based devices and to enable the use of thick transparent conductive oxides. Optoelectronic devices such as LEDs, laser diodes, solar cells, biomedical devices, thermoelectrics, and other optoelectronic devices may be fabricated on the freestanding nitride films. The refractive index of the freestanding nitride films can be controlled via alloy composition. Light guiding or light extraction optical elements may be formed based on freestanding nitride films with or without layers. Dual sided processing is enabled by use of these freestanding nitride films. This enables more efficient output for light emitting devices and more efficient energy conversion for solar cells. | 2010-08-12 |
20100200838 | SWITCHING ELEMENT - In a switching element using, for the active layer, a carbon nanotube (CNT) dispersed film which can be manufactured at low temperatures, the interaction between the CNT and the surface of the gate insulating film is insufficient. For this reason, a problem of such a switching element is that the amount of CNT fixed in the channel region is insufficient, resulting in insufficient uniformity. In the switching element of the exemplary embodiment, a gate insulating film is formed of a nonconjugated polymer material containing, in the main chain, an aromatic group and a substituted or unsubstituted alkylene or alkyleneoxy group having 2 or more carbon atoms as repeating units. As a result, the interaction between the CNT and the surface of the gate insulating film is enhanced while maintaining the flexibility of the gate insulating film, and the amount of CNT fixed in the channel region can be increased. Thereby, a switching element having good and stable transistor characteristics can be obtained by a low-temperature, simple, and inexpensive process. | 2010-08-12 |
20100200839 | GRAPHENE GROWN SUBSTRATE AND ELECTRONIC/PHOTONIC INTEGRATED CIRCUITS USING SAME - A graphene-on-oxide substrate according to the present invention includes: a substrate having a metal oxide layer formed on its surface; and, formed on the metal oxide layer, a graphene layer including at least one atomic layer of the graphene. The graphene layer is grown generally parallel to the surface of the metal oxide layer, and the inter-atomic-layer distance between the graphene atomic layer adjacent to the surface of the metal oxide layer and the surface atomic layer of the metal oxide layer is 0.34 nm or less. Preferably, the arithmetic mean surface roughness Ra of the metal oxide layer is 1 nm or less. | 2010-08-12 |
20100200840 | GRAPHENE-BASED TRANSISTOR - A graphene layer is formed on a surface of a silicon carbide substrate. A dummy gate structure is formed over the fin, in the trench, or on a portion of the planar graphene layer to implant dopants into source and drain regions. The dummy gate structure is thereafter removed to provide an opening over the channel of the transistor. Threshold voltage adjustment implantation may be performed to form a threshold voltage implant region directly beneath the channel, which comprises the graphene layer. A gate dielectric is deposited over a channel portion of the graphene layer. After an optional spacer formation, a gate conductor is formed by deposition and planarization. The resulting graphene-based field effect transistor has a high carrier mobility due to the graphene layer in the channel, low contact resistance to the source and drain region, and optimized threshold voltage and leakage due to the threshold voltage implant region. | 2010-08-12 |
20100200841 | LIQUID COMPOSITIONS FOR INKJET PRINTING OF ORGANIC LAYERS OR OTHER USES - A method of forming an organic layer by using a liquid composition comprising a small molecule organic semiconductor material mixed in a ketone solvent. The liquid composition is deposited on a surface to form the organic layer. The ketone solvent may be an aromatic ketone solvent, such as a tetralone solvent. The organic semiconductor material may be cross-linkable to provide a cross-linked organic layer. The method can be used to make organic electronic devices, such as organic light emitting devices. In another aspect, the liquid composition comprises a small molecule organic semiconductor material mixed in an aromatic ether solvent. Also, provided are liquid compositions which can be used to make organic layers. | 2010-08-12 |
20100200842 | Surface modifying agent, laminated structure and transistor including the same, and method of manufacturing the laminated structure - Disclosed is a surface modifying agent including a compound having an ethynyl group at one terminal end, a laminated structure manufactured using the surface modifying agent, a method of manufacturing the laminated structure, and a transistor including the same. | 2010-08-12 |
20100200843 | THIN FILM TRANSISTOR AND DISPLAY UNIT - A thin film transistor with which oxygen is easily supplied to an oxide semiconductor layer and favorable transistor characteristics are able to be restored and a display unit including the same are provided. The thin film transistor includes sequentially over a substrate a gate electrode, a gate insulting film, an oxide semiconductor layer including a channel region, and a channel protective layer covering the channel region A source electrode and a drain electrode are formed on the oxide semiconductor layer located on both sides of the channel protective layer, and at least one of the source electrode and the drain electrode has an aperture to expose the oxide semiconductor layer. | 2010-08-12 |
20100200844 | ORGANIC THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF - An organic thin film transistor including a gate, a gate insulator covering the gate, a source, a drain, an organic semiconductor layer, a hydrophobic layer and a protecting droplet is provided. A hydrophobic region is formed by forming the hydrophobic layer on a surface of the source and a surface of the drain, respectively. Meanwhile, a hydrophilic region is formed on the organic semiconductor layer exposed by the hydrophobic layer. The protecting droplet is self-assemblingly formed on the organic semiconductor layer to protect the device characteristic by using the surface tension thereof. Therefore, an organic thin film transistor having a simple fabricating process is provided. Besides, a fabricating method of an organic thin film transistor is also provided. | 2010-08-12 |
20100200845 | ORGANIC LIGHT EMITTING DIODE DISPLAY - Embodiments provide an organic light emitting diode display. The display includes a substrate, a pixel electrode formed on the substrate, and an organic emissive layer formed on the pixel electrode. A common electrode is formed on the organic emissive layer. In addition, a crystallized light scattering layer is formed on the common electrode. The crystallized light scattering layer may be a crystallized organic or crystallized inorganic layer having a rough surface in order to effectively scatter light and prevent phenomenon, such as Newton's Rings from occurring in the display. | 2010-08-12 |
20100200846 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a substrate having organic light emitting diodes thereon. A thin film encapsulation layer is formed on the substrate such that the thin film encapsulation layer covers the organic light emitting diodes. A nonorganic layer is formed under the thin film encapsulation layer along the edge of the thin film encapsulation layer. | 2010-08-12 |
20100200847 | ORGANIC COMPOUND, ANTHRACENE DERIVATIVE, AND LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE USING ANTHRACENE DERIVATIVE - Objects of the present invention are to provide novel anthracene derivatives and novel organic compounds; a light-emitting element that has high emission efficiency; a light-emitting element that is capable of emitting blue light with high luminous efficiency; a light-emitting element that is capable of operation for a long time; and a light-emitting device and an electronic device that have lower power consumption. An anthracene derivative represented by a general formula (1) and an organic compound represented by a general formula (17) are provided. A light-emitting element that has high emission efficiency can be obtained by use of the anthracene derivative represented by the general formula (1). Further, a light-emitting element that has a long life can be obtained by use of the anthracene derivative represented by the general formula (1). | 2010-08-12 |
20100200848 | ORGANIC ELECTROLUMINESCENT DEVICE WITH CARRIER BLOCKING LAYER INTERPOSED BETWEEN TWO EMITTING LAYERS - An organic electroluminescent device including in sequence an anode, a first emitting layer ( | 2010-08-12 |
20100200849 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor and a manufacturing method thereof are provided. In the manufacturing method of the thin film transistor a semiconductive active layer and a semiconductor passivation layer are sequentially formed such that the semiconductor passivation layer protectively covers the semiconductive active layer. Then the stacked combination of the semiconductive active layer and semiconductor passivation layer are patterned by using a same patterning mask so that formed islands of the semiconductive active layer continue to be protectively covered by formed islands of the semiconductor passivation layer. In one embodiment, the semiconductive active layer is formed of a semiconductive oxide. | 2010-08-12 |
20100200850 | Method of Producing a Partly or Completely Semi-Insulating or P-Type Doped ZnO Substrate, Substrates Obtained, and Electronic, Electro-Optic or Optoelectronic Devices Comprising Them - Method of producing a partly or completely semi-insulating or p-type doped ZnO substrate from an n-type doped ZnO substrate, in which the n-type doped ZnO substrate is brought into contact with an anhydrous molten salt chosen from anhydrous molten sodium nitrate, lithium nitrate, potassium nitrate and rubidium nitrate. | 2010-08-12 |
20100200851 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SEMICONDUCTOR DEVICE - An object is to provide a semiconductor device provided with a thin film transistor having excellent electric characteristics using an oxide semiconductor layer. An In—Sn—O-based oxide semiconductor layer including SiO | 2010-08-12 |
20100200852 | NONVOLATILE MEMORY ELEMENT, NONVOLATILE MEMORY APPARATUS, AND METHOD OF MANUFACTURE THEREOF - A lower electrode layer | 2010-08-12 |
20100200853 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A method for manufacturing a semiconductor device includes: (a) performing an inspection using an evaluation element formed on a scribe line of a semiconductor wafer; (b) marking a character on the semiconductor wafer, the character representing information based on a result obtained in step (a); and (c) performing a step subsequent to step (b) while using the information represented by the character marked in step (b). | 2010-08-12 |
20100200854 | Method for reclaiming a surface of a substrate - A method for reclaiming a surface of a substrate, wherein the surface, in particular a silicon surface, comprises a protruding residual topography, comprising at least the layer of a first material. By providing a filling material in the non-protruding areas of the surface of the substrate and the subsequent polishing, the reclaiming can be carried out such that the material consuming double-sided polishing step used in the prior art is no longer necessary. | 2010-08-12 |
20100200855 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention has an object to provide an active-matrix liquid crystal display device that realizes the improvement in productivity as well as in yield. In the present invention, a laminate film comprising the conductive film comprising metallic material and the second amorphous semiconductor film containing an impurity element of one conductivity type and the amorphous semiconductor film is selectively etched with the same etching gas to form a side edge of the first amorphous semiconductor film | 2010-08-12 |
20100200856 | METHOD FOR MANUFACTURING E-JPAPER ARRAY SUBSTRATE AND E-PAPER ARRAY SUBSTRATE - A method for manufacturing E-paper array substrate and an E-paper array substrate are provided. The method for manufacturing E-paper array substrate uses two masks. Steps on a surface of the array substrate structure are eliminated, so as to facilitate a subsequent coating process of E-ink and enable a uniform distribution of a drain electric field. An E-paper array substrate is further provided. | 2010-08-12 |
20100200857 | OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR - A transistor includes a gate electrode, a gate insulating layer, a semiconductor layer including an amorphous oxide, source-drain electrodes, and a protective layer on a substrate. The semiconductor layer includes a first region corresponding to a region in which the source-drain electrodes are formed, and a second region not corresponding to the region in which the source-drain electrodes are formed. At least the first region includes a crystalline component having a composition different from the composition of the amorphous oxide in the second region. | 2010-08-12 |
20100200858 | DISPLAY DEVICE - A display device includes a plurality of thin-film transistors formed on a substrate on which a display area is formed. At least one of the plurality of thin-film transistors includes a gate electrode, agate insulating film formed to cover the gate electrode, an interlayer insulating film formed on an upper surface of the gate insulating film and having an opening formed in an area where the gate electrode is formed in plan view, a pair of heavily-doped semiconductor films arranged on an upper surface of the interlayer insulating film with the opening interposed therebetween, a polycrystalline semiconductor film formed across the opening and formed in the area, the polycrystalline semiconductor film being electrically connected to the pair of heavily-doped semiconductor films, and a pair of electrodes formed to overlap the pair of heavily-doped semiconductor films, respectively, without overlapping the polycrystalline semiconductor film. | 2010-08-12 |
20100200859 | THIN FILM TRANSISTOR ARRAY PANEL FOR X-RAY DETECTOR - A thin film transistor array panel for an X-ray detector includes a dummy pixel including a photo diode and a TFT for detecting leakage current. The photo diode includes first and second electrodes ( | 2010-08-12 |
20100200860 | Thin Film Transistor Array Panel and Manufacturing Method Thereof - A thin film transistor array panel is provided, which includes: a substrate; a first polysilicon member that is formed on the substrate and includes an intrinsic region, at least one first extrinsic region, and at least one second extrinsic region disposed between the intrinsic region and the at least one first extrinsic region and having an impurity concentration lower than the at least one first extrinsic region; a first insulator formed on the first polysilicon member and having an edge substantially coinciding with a boundary between the at least one first extrinsic region and the at least one second extrinsic region; and a first electrode formed on the first insulator and having an edge substantially coinciding with a boundary between the intrinsic region and the at least one second extrinsic region. | 2010-08-12 |
20100200861 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light emitting diode display and a method of manufacturing the display, the organic light emitting diode display including: a substrate; a semiconductor layer formed on the substrate, having a channel region, a source region, and a drain region; a gate insulating layer covering the semiconductor layer; a gate electrode formed on the channel region; and an interlayer insulating layer covering the gate electrode. Source and drain electrodes are formed on the interlayer insulating layer, and are connected to the source and drain regions, respectively. A pixel electrode extends from the drain electrode, in the same plane as the source and drain electrodes. The source and drain electrodes each have a first conductive layer formed of a transparent conductive material, and a metallic second conductive layer formed on the first conductive layer. The pixel electrode is formed from the first conductive layer. | 2010-08-12 |
20100200862 | LIQUID CRYSTAL DISPLAY DEVICE AND FABRICATING METHOD THEREOF - A liquid crystal display device may comprise a semiconductor layer on a substrate and including a channel portion and ohmic contact portions at both sides of the channel portion, wherein an edge portion of the semiconductor layer has a side surface of a substantially tapered shape; a gate insulating layer covering the semiconductor layer; a gate electrode on the gate insulating layer and substantially corresponding to the channel portion; source and drain electrodes contacting the semiconductor layer; and a pixel electrode contacting the drain electrode. | 2010-08-12 |
20100200863 | ELECTRODE STRUCTURE, SEMICONDUCTOR DEVICE, AND METHODS FOR MANUFACTURING THOSE - A first layer containing Ti as a constituent element, a second layer containing Nb as a constituent element, and a third layer containing Au as a constituent element are formed on a GaN substrate 11. Thereafter, the GaN substrate 11 and the first to third layers are kept at 700° C. or higher and at 1300° C. or lower. This allows a metal oxide of Ti to be distributed to extend from the interface between the GaN substrate 11 and the electrode 14 over to the inside of the electrode 14. Further, a metal nitride of Nb is formed in the inside of the GaN substrate 11. The metal nitride of Nb will be distributed to extend from the inside of the electrode 14 over to the inside of the GaN substrate 11. | 2010-08-12 |
20100200864 | Method for Fabricating a Semiconductor Component Based on GaN - A semiconductor component has a plurality of GaN-based layers, which are preferably used to generate radiation, produced in a fabrication process. In the process, the plurality of GaN-based layers are applied to a composite substrate that includes a substrate body and an interlayer. A coefficient of thermal expansion of the substrate body is similar to or preferably greater than the coefficient of thermal expansion of the GaN-based layers, and the GaN-based layers are deposited on the interlayer. The interlayer and the substrate body are preferably joined by a wafer bonding process. | 2010-08-12 |
20100200865 | GROUP III NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR CLEANING THE SAME - A Group-III nitride semiconductor substrate having a flat surface with a dangling bond density of higher than 14.0 nm | 2010-08-12 |
20100200866 | SiC single crystal substrate, SiC single crystal epitaxial wafer, and SiC semiconductor device - A direction of a dislocation line of a threading dislocation is aligned, and an angle between the direction of the dislocation line of the threading dislocation and a [0001]-orientation c-axis is equal to or smaller than 22.5 degrees. The threading dislocation having the dislocation line along with the [0001]-orientation c-axis is perpendicular to a direction of a dislocation line of a basal plane dislocation. Accordingly, the dislocation does not provide an extended dislocation on the c-face, so that a stacking fault is not generated. Thus, when an electric device is formed in a SiC single crystal substrate having the direction of the dislocation line of the threading dislocation, which is the [0001]-orientation c-axis, a SiC semiconductor device is obtained such that device characteristics are excellent without deterioration, and a manufacturing yield ration is improved. | 2010-08-12 |
20100200867 | VERTICAL STRUCTURE LED DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a vertical structure light emitting diode device, the method including: sequentially forming a first conductivity type III-V group compound semiconductor layer, an active layer, and a second conductivity type III-V group compound semiconductor layer on a substrate for growth; bonding a conductive substrate to the second conductivity type III-V group compound semiconductor layer; removing the substrate for growth from the first conductivity type III-V group compound semiconductor layer; and forming an electrode on an exposed portion of the first conductive III-V group compound semiconductor layer due to the removing the substrate for growth, wherein the bonding a conductive substrate comprises partially heating a metal bonding layer by applying microwaves to a bonding interface while bringing the metal bonding layer into contact with the bonding interface. | 2010-08-12 |
20100200868 | Semiconductor Light-emitting device - A semiconductor light-emitting device includes a semiconductor light-emitting element including a first multilayer reflector, an active layer having a light-emitting region, and a second multilayer reflector in the stated order; a semiconductor light-detecting element disposed opposite the first multilayer reflector in relation to the semiconductor light-emitting element and including a light-absorbing layer configured to absorb light emitted from the light-emitting region; a transparent substrate disposed between the semiconductor light-emitting element and the semiconductor light-detecting element; a first metal layer having a first opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-emitting element and the substrate; and a second metal layer having a second opening in a region including a region opposite the light-emitting region and bonding the semiconductor light-detecting element and the substrate. | 2010-08-12 |
20100200869 | METHOD OF MANUFACTURING DISPLAY DEVICE AND DISPLAY DEVICE - A method of manufacturing a display device including the steps of: forming drive elements on a substrate; forming a planarization film in a position corresponding to each of the drive elements; forming a bottom electrode corresponding to each of the plurality of organic light emitting elements; forming a pixel isolation insulating film in a region between the bottom electrodes; forming an organic layer including a light emission layer above the bottom electrode by evaporation using an evaporation mask; and forming a top electrode over the organic layer. In the step of forming the bottom electrode includes the steps of: forming a bottom electrode material film; forming a photoresist film on the bottom electrode material film; exposing the photoresist film using the evaporation mask and developing it; and selectively removing the bottom electrode material film by etching using the photoresist film as a mask. | 2010-08-12 |
20100200870 | LIGHT-EMITTING DIODE DIE PACKAGE AND METHOD FOR PRODUCING SAME - The present invention relates to a light-emitting diode die package having an LED die and an accommodating housing. The LED die has a first doped layer doped with a p- or n-type dopant and a second doped layer doped with a different dopant from that doped in the first doped layer. Each of the first and second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is formed. The insulation layer is formed with exposure holes for exposing the electrodes corresponding thereto. Each of the exposure holes is formed inside with an electrically conductive linker. The accommodating housing has an open end through which an accommodating space is accessible. The LED die is positioned within the accommodating space in such a manner that the electrically conductive linker protrudes outwardly from the accommodating space. | 2010-08-12 |
20100200871 | Self-Light-Emitting Device and Method of Manufacturing the Same - Failure light emission of an EL element due to failure film formation of an organic EL material in an electrode hole | 2010-08-12 |
20100200872 | ILLUMINATION DEVICE HAVING MULTIPLE LED ELEMENTS WITH VARYING COLOR TEMPERATURES - An illumination device is provided with an arrangement for reducing color unevenness. A plurality of light-emitting devices are provided, each of which includes a transparent enclosure sealing a light-emitting element and further including a phosphor excited by light emitted from the light-emitting element. A substrate is provided upon which the plurality of light-emitting devices are mounted. The light-emitting devices are provided with predetermined color temperatures that vary in accordance with their position along the substrate to reduce color unevenness, for example increasing in a phased manner from the center of the substrate toward the outer circumference thereof. | 2010-08-12 |
20100200873 | HIGH EFFICIENT PHOSPHOR-CONVERTED LIGHT EMITTING DIODE - A light-emitting device and manufacturing method thereof are disclosed. The light-emitting device includes a substrate, a semiconductor light-emitting structure, a filter layer, and a fluorescent conversion layer. The method comprises forming a semiconductor light-emitting structure over a substrate, forming a filter layer over the semiconductor light-emitting structure, and forming a fluorescent conversion layer over the filter layer. | 2010-08-12 |
20100200874 | PHOSPHOR, METHOD FOR PRODUCING THE SAME AND LIGHT-EMITTING DEVICE USING THE SAME - The invention is a phosphor which includes a phosphor material having a composition represented by a general formula: M(0) | 2010-08-12 |
20100200875 | ORGANIC ELECTROLUMINESCENT DEVICE AND ELECTRONIC APPARATUS - An organic electroluminescent device includes a substrate; a plurality of light-emitting elements disposed on the substrate and including first transparent electrodes, a second transparent electrode, and light-emitting layers held therebetween; reflective layers disposed opposite the light-emitting layers with the first electrodes therebetween; a first insulating film disposed between the substrate and the reflective layers and formed of an organic material; and a second insulating film disposed between the first electrodes and the reflective layers so as to cover the reflective layers and the first insulating film. The second insulating film has a first through-hole at a position not overlapping the first electrodes in plan view. The first through-hole extends through the second insulating film to reach the first insulating film. | 2010-08-12 |
20100200876 | MULTI-CHIP LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - Multi-chip light emitting diodes and method for fabricating the same are provided. The multi-chip light emitting diode includes a lead frame including a carrier part. A plurality of chips is disposed on the carrier part, wherein the plurality of chips includes a first chip and a second chip. A first scattering layer is conformally covering the first chip to expose electrodes thereof, wherein the first scattering layer consists of a first scattering material. A second scattering layer is conformally covering the second chip to expose electrodes thereof, wherein the second scattering layer consists of a second scattering material. | 2010-08-12 |
20100200877 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting device including a first semiconductor layer, an active layer formed on the first semiconductor layer, a second semiconductor layer formed on the active layer, and at least one SiN | 2010-08-12 |
20100200878 | Light-Generating Arrangement - The invention relates to a light-generating arrangement comprising a light-emitting semiconductor element provided with electric supply lines and a transparent light-directing element ( | 2010-08-12 |
20100200879 | PHOTOELECTRIC SEMICONDUCTOR DEVICE - A photoelectric semiconductor device has a metal wiring layer packed or embedded into a housing for enhancing package stability and electric connectivity. The housing has a cavity structure, and at least one LED chip and an encapsulating material are configured inside the cavity structure. The metal wiring layer locates inside the housing, or in other words, between the top surface and the bottom surface of the housing, and extends to the bottom of the cavity structure to electrically connect the LED chip. With fully wrapping around, the metal wiring layer has higher stability and more reliability from being harmed by outside changes in humidity and temperature. | 2010-08-12 |
20100200880 | SEMICONDUCTOR WAFERS AND SEMICONDUCTOR DEVICES AND METHODS OF MAKING SEMICONDUCTOR WAFERS AND DEVICES - Semiconductor wafers, semiconductor devices, and methods of making semiconductor wafers and devices are provided. Embodiments of the present invention are especially suitable for use with substrate substitution applications, such in the case of fabricating vertical LED. One embodiment of the present invention includes a method of making a semiconductor device, the method comprising providing a substrate; forming a plurality of polishing stops on the substrate, each of the plurality of polishing stops including ceramic material; growing one or more buffer layers on the substrate; and growing one or more epitaxial layers on the one or more buffer layers. Additionally, the steps of applying one or more metal layers to the one or more epitaxial layers, affixing a second substrate to the one or more metal layers and removing the base substrate using a mechanical thinning process may be performed. | 2010-08-12 |
20100200881 | Light Emitting Element and Illumination Device - A light emitting element comprises a semiconductor layer ( | 2010-08-12 |
20100200882 | THERMOSETTING LIGHT-REFLECTING RESIN COMPOSITION, OPTICAL SEMICONDUCTOR ELEMENT MOUNTING BOARD PRODUCED THEREWITH, METHOD FOR MANUFACTURE THEREOF, AND OPTICAL SEMICONDUCTOR DEVICE - There is provided a thermosetting light-reflecting resin composition that has a high level of various characteristics required of optical semiconductor element mounting boards, such as optical properties and thermal discoloration resistance, provides high releasability during molding such as transfer molding, and allows molding processes to be performed continuously. There are also provided a highly-reliable optical semiconductor element mounting board and an optical semiconductor device each produced with the resin composition, and methods for efficient production thereof. A thermosetting light-reflecting resin composition is prepared and used, which includes (A) an epoxy resin, (B) a curing agent, (C) a curing catalyst, (D) an inorganic filler, (E) a white pigment, (F) an additive, and (G) a release agent as major components, wherein the resin composition, after curing, has a diffuse reflectance of 80% or more at a light wavelength of 400 nm; and the resin composition is possible to perform transfer molding 100 times or more continuously. | 2010-08-12 |
20100200883 | METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENCE ELEMENT AND ORGANIC ELECTROLUMINESCENCE ELEMENT - A method for producing an organic electroluminescence element, the method including subjecting an anode to a surface treatment using at least one non-oxidizing gas, and forming a p-doped hole-injection layer on a surface of the anode subjected to the surface treatment. | 2010-08-12 |
20100200884 | LIGHT EMITTING DEVICE AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device is provided. The light emitting device comprises: a conductive support substrate; a bonding layer on the conductive support substrate; a reflective layer on the bonding layer; and a light emitting structure layer on the reflective layer. The bonding layer comprises a solder bonding layer on the conductive support substrate and at least one of a diffusion barrier layer and an adhesion layer on the solder bonding layer, the solder bonding layer, the diffusion barrier layer, and the adhesion layer being formed of a metal or an alloy of which the Young's Modulus is 9 GPa to 200 GPa. | 2010-08-12 |
20100200885 | LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREOF - A light emitting device and a method of fabricating thereof are provided. The method of fabricating the light emitting device comprises: providing a substrate having a first major surface and a second major surface; forming a plurality of light-emitting stacks on the first major surface; forming an etching protection layer on each of the light emitting stacks; forming a plurality of holes by a discontinuous laser beam on the substrate; etching the plurality of holes; and slicing off the substrate along the plurality of holes to form a light emitting device. The light emitting device has a substrate wherein the sidewall of the substrate comprising a first area with a substantially flat surface and a second area with substantially textured surface. | 2010-08-12 |
20100200886 | WAVELENGTH-CONVERTED SEMICONDUCTOR LIGHT EMITTING DEVICE - Embodiments of the invention include a light emitting structure comprising a light emitting layer. A first luminescent material comprising a phosphor is disposed in a path of light emitted by the light emitting layer. A second luminescent material comprising a semiconductor is also disposed in a path of light emitted by the light emitting layer. The second luminescent material is configured to absorb light emitted by the light emitting layer and emit light of a different wavelength. In some embodiments, one of the first and second luminescent materials may be bonded to the semiconductor structure. | 2010-08-12 |
20100200887 | LIGHT EMITTING DEVICE - A light emitting device including a thinned color conversion layer which emits a light with a minimized color ununiformity. The light emitting element includes an LED chip, a color conversion layer. The color conversion layer is made of a light-transmissive material containing a phosphor. The phosphor is excited by a light emitted from the LED chip to emit a light of a color having a wavelength longer than that of a luminescent color of the LED chip. The LED chip is provided at its top surface with a frame-shaped electrode which extends along its edge. The color conversion layer is formed on the top surface of the LED chip at an area surrounded by the frame-shaped electrode. | 2010-08-12 |
20100200888 | Silicon-Based Sub-Mount for an Opto-Electronic Device - A package for an optoelectronic device (e.g., a light emitting device such as a LED) includes a sub-mount including a silicon substrate having a thickness in the range of 350 μm-700 μm. The optoelectronic device is mounted on a die attach pad on the front-side surface of the substrate. Feed-through metallization in one or more via structures electrically couples the die attach pad to a contact pad on the back-side surface of the substrate. | 2010-08-12 |
20100200889 | METHOD FOR FORMING A LIGHT-EMITTING CASE AND RELATED LIGHT-EMITTING MODULE - A method for manufacturing a light-emitting case includes forming a PLED (Polymer Light Emitting Diode) device, disposing the PLED device into a mold, and utilizing the mold to sheathe the PLED device with transparent plastic material in an injection-molding manner. Since the mold has a cavity corresponding to a predetermined shape, the formed transparent plastic material has a geometric appearance corresponding to the predetermined shape. | 2010-08-12 |
20100200890 | CURABLE RESIN COMPOSITION, LED PACKAGE, AND METHOD FOR PRODUCTION OF THE LED PACKAGE, AND OPTICAL SEMICONDUCTOR - The curable resin composition of the present invention comprises a polyol component containing tri- or higher functional polycaprolactone polyol; and a polyisocyanate component containing bifunctional or trifunctional alicyclic isocyanate having one or more chemical structures in which an isocyanate group is bonded to a secondary carbon atom. | 2010-08-12 |
20100200891 | LED STRUCTURE - The present invention discloses an improved LED structure and comprises: a LED chip; a wire; a packing mask; and a photocatalytic agent. The volume of an LED is smaller so as to be convenient for installation. Compared to a conventional LED with same power, the present invention increases the total contact surface area that contacts air, so that the functions of disinfection, deodorization, and mildewproofing can be effectively achieved. | 2010-08-12 |
20100200892 | TUNNEL DEVICE - This invention relates to a tunnel device which can generate tunneling effect with multi-band waveforms. The tunnel device can also be interacted with the field which includes thermal field, optical field, electric field, magnetic field, pressure field, acoustic field, or any combination of them. This tunnel device can be a power conversion device for driving high speed loading such as p-n junction device. | 2010-08-12 |
20100200893 | SUPER GTO-BASED POWER BLOCKS - A gate turn-off thyristor (GTO) device has a lower portion, an upper portion and a lid. The lower portion has a lower base region of a first conductivity type, and a lower emitter region of a second conductivity type disposed at or from a lower surface of the lower base region. A lower junction is formed between the lower base region and the lower emitter region. The upper portion has an upper base region of the second conductivity type, and upper emitter regions of the first conductivity type disposed at or from an upper surface of the upper base region. An upper-lower junction is formed between the lower base region and the upper base region, and upper junctions are formed between the upper base region and the upper emitter regions. The upper base region and upper emitter regions form an upper base surface with first conductive contacts to the upper base region alternating with second conductive contacts to the upper emitter regions. The lid has a layer of insulator with upper and lower surfaces. Upper metal stripes extend along the upper surface of the insulator, and lower metal stripes extend along the lower surface of the insulator. The upper and lower metal stripes are connected together by vias that extend through the insulator. One set of the lower metal stripes contacts the first conductive contacts, but not the second conductive contacts. Another set of the lower metal stripes contacts the second conductive contacts, but not the first conductive contacts. | 2010-08-12 |
20100200894 | HETERO JUNCTION BIPOLAR TRANSISTOR - An energy level Ec in a vicinity of an interface between a graded layer | 2010-08-12 |
20100200895 | UNIT PIXEL IMPROVING IMAGE SENSITIVITY AND DYNAMIC RANGE - Provided are a unit pixel for improving sensitivity in low illumination conditions and a method of manufacturing the unit pixel. The unit pixel includes: a photodiode generating image charges corresponding to an image signal; a transfer transistor transferring the image charges to a floating diffusion area; and a reset transistor having a terminal connected to the floating diffusion area and the other terminal applied with a power supply, wherein concentration of impurity ions implanted into the floating diffusion area is lower than concentration of impurity ions implanted into a diffusion area of the reset transistor applied with the power supply. | 2010-08-12 |
20100200896 | EMBEDDED STRESS ELEMENTS ON SURFACE THIN DIRECT SILICON BOND SUBSTRATES - A method for growing an epitaxial layer on a substrate wherein the substrate includes a surface having a Miller index of (110) for the beneficial properties. The method comprises using a direct silicon bonded wafer with a substrate having a first Miller index and a surface having a second Miller index. An element such as a gate for a PFET may be deposited onto the surface. The area not under the gate may then be etched away to expose the substrate. An epitaxial layer may then be grown on the surface providing optimal growth patterns. The Miller index of the substrate may be (100). In an alternative embodiment the surface may have a Miller index of (100) and the surface is etched where an element such as a gate for a PFET may be placed. | 2010-08-12 |
20100200897 | TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a transistor ( | 2010-08-12 |
20100200898 | IMAGE AND LIGHT SENSOR CHIP PACKAGES - An image or light sensor chip package includes an image or light sensor chip having a non-photosensitive area and a photosensitive area surrounded by the non-photosensitive area. In the photosensitive area, there are light sensors, a layer of optical or color filter array over the light sensors and microlenses over the layer of optical or color filter array. In the non-photosensitive area, there are an adhesive polymer layer and multiple metal structures having a portion in the adhesive polymer layer. A transparent substrate is formed on a top surface of the adhesive polymer layer and over the microlenses. The image or light sensor chip package also includes wirebonded wires or a flexible substrate bonded with the metal structures of the image or light sensor chip. | 2010-08-12 |
20100200899 | SPIN TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - A spin transistor includes a source electrode, a drain electrode, and a gate electrode on a semiconductor substrate. At least one of the source electrode and the drain electrode includes a semiconductor region and a magnetic layer. The semiconductor region is formed in the semiconductor substrate. The magnetic layer is formed on the semiconductor region, and contains a crystalline Heusler alloy containing at least one of cobalt (Co) and iron (Fe). The semiconductor region and the magnetic layer contain the same impurity element. | 2010-08-12 |
20100200900 | MAGNETORESISTIVE ELEMENT AND METHOD OF MANUFACTURING THE SAME - A magnetoresistive element of an aspect of the present invention including a lower electrode provided on an insulating layer on a semiconductor substrate, a first ferromagnetic layer provided on the lower electrode, a first tunnel barrier layer provided on the first ferromagnetic layer, a second ferromagnetic layer provided on the first tunnel barrier layer, and an upper electrode provided on the second ferromagnetic layer, wherein the upper electrode has a hexagonal cross-sectional shape, and a maximum size of the upper electrode in a first direction is larger than a size of the first tunnel barrier layer in the first direction, the first direction being horizontal relative to a surface of the semiconductor substrate. | 2010-08-12 |
20100200901 | Semiconductor memory device having cylinder-type capacitor lower electrode and associated methods - A semiconductor memory device including a plurality of supports extending parallel to each other in a first direction on a semiconductor substrate, and capacitor lower electrode rows including a plurality of capacitor lower electrodes arranged in a line along the first direction between two adjacent supports from among the plurality of supports, each capacitor lower electrode including outside walls, wherein each of the capacitor lower electrodes includes two support contact surfaces on the outside walls of the capacitor lower electrode, the support contact surfaces respectively contacting the two adjacent supports from among the plurality of supports. | 2010-08-12 |