| 32nd week of 2013 patent applcation highlights part 15 |
| Patent application number | Title | Published |
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| 20130200322 | MEMORY ARRAYS AND METHODS OF FORMING THE SAME - Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a conductive material in a number of vias and on a substrate structure, the conductive material to serve as a number of conductive lines of the array and coupling the number of conductive lines to the array circuitry. | 2013-08-08 |
| 20130200323 | MULTIFUNCTIONAL ELECTRODE - A nonvolatile memory element is disclosed comprising a first electrode, a near-stoichiometric metal oxide memory layer having bistable resistance, and a second electrode in contact with the near-stoichiometric metal oxide memory layer. At least one electrode is a resistive electrode comprising a sub-stoichiometric transition metal nitride or oxynitride, and has a resistivity between 0.1 and 10 Ω cm. The resistive electrode provides the functionality of an embedded current-limiting resistor and also serves as a source and sink of oxygen vacancies for setting and resetting the resistance state of the metal oxide layer. Novel fabrication methods for the second electrode are also disclosed. | 2013-08-08 |
| 20130200324 | Transition Metal Oxide Bilayers - Embodiments of the invention include nonvolatile memory elements and memory devices comprising the nonvolatile memory elements. Methods for forming the nonvolatile memory elements are also disclosed. The nonvolatile memory element comprises a first electrode layer, a second electrode layer, and a plurality of layers of an oxide disposed between the first and second electrode layers. One of the oxide layers has linear resistance and substoichiometric composition, and the other oxide layer has bistable resistance and near-stoichiometric composition. Preferably, the sum of the two oxide layer thicknesses is between about 20 Å and about 100 Å, and the oxide layer with bistable resistance has a thickness between about 25% and about 75% of the total thickness. In one embodiment, the oxide layers are formed using reactive sputtering in an atmosphere with controlled flows of argon and oxygen. | 2013-08-08 |
| 20130200325 | Nonvolatile Memory Device Using A Tunnel Nitride As A Current Limiter Element - Embodiments of the invention generally include a method of forming a nonvolatile memory device that contains a resistive switching memory element that has an improved device switching performance and lifetime, due to the addition of a current limiting component disposed therein. In one embodiment, the current limiting component comprises a resistive material that is configured to improve the switching performance and lifetime of the resistive switching memory element. The electrical properties of the current limiting layer are configured to lower the current flow through the variable resistance layer during the logic state programming steps (i.e., “set” and “reset” steps) by adding a fixed series resistance in the resistive switching memory element found in the nonvolatile memory device. In one embodiment, the current limiting component comprises a tunnel nitride that is a current limiting material that is disposed within a resistive switching memory element in a nonvolatile resistive switching memory device. | 2013-08-08 |
| 20130200326 | NONVOLATILE MEMORY CELL AND NONVOLATILE MEMORY DEVICE INCLUDING THE SAME - According to example embodiments, a nonvolatile memory cell includes a first electrode and a second electrode, a resistance change film between the first electrode and the second electrode, and a first barrier film contacting the second electrode. The resist change film contains oxygen ions and contacts the first electrode. The first barrier film is configured to reduce (and/or block) the outflow of the oxygen ions from the resistance change film. | 2013-08-08 |
| 20130200327 | Resistive Memory Arrangement and a Method of Forming the Same - According to embodiments of the present invention, a resistive memory arrangement is provided. The resistive memory arrangement includes a nanowire, and a resistive memory cell including a resistive layer including a resistive changing material, wherein at least a section of the resistive layer is arranged covering at least a portion of a surface of the nanowire, and a conductive layer arranged on at least a part of the resistive layer. According to further embodiments of the present invention, a method of forming a resistive memory arrangement is also provided. | 2013-08-08 |
| 20130200328 | PHASE CHANGE MEMORY DEVICES - A phase change memory device is provided, including: a substrate; a first dielectric layer disposed over the substrate; a first electrode disposed in the first dielectric layer; a second dielectric layer formed over the first dielectric layer, covering the first electrode; a heating electrode disposed in the second dielectric layer, contacting the first electrode; a phase change material layer disposed over the second dielectric layer, contacting the heating electrode; and a second electrode disposed over the phase change material layer, wherein the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides, and the first portion of the heating electrode includes no metal silicides, and includes refractory metal materials or noble metal materials. | 2013-08-08 |
| 20130200329 | MEMORY CELL DEVICE AND METHOD OF MANUFACTURE - According to one embodiment of the present invention, a solid state electrolyte memory cell includes a cathode, an anode and a solid state electrolyte. The anode includes an intercalating material and first metal species dispersed in the intercalating material. | 2013-08-08 |
| 20130200330 | SELF-ALIGNED PROCESS TO FABRICATE A MEMORY CELL ARRAY WITH A SURROUNDING-GATE ACCESS TRANSISTOR - A memory array including a plurality of memory cells. Each word line is electrically coupled to a set of memory cells, a gate contact and a pair of dielectric pillars positioned parallel to the word line and placed on both sides of the gate contact over a layer of insulating material. Also a method to prevent a gate contact from electrically connecting to a source contact for a plurality of memory cells on a substrate. The method includes formation of a pair of pillars over an insulating material on the substrate, depositing an electrically conductive gate material between and over the pillars, etching the gate material such that it both partially fills a space between the pair of pillars and forms a word line for the memory cells, and depositing a gate contact between the dielectric pillars such that the gate contact is in electrical contact with the gate material. | 2013-08-08 |
| 20130200331 | SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME - In a semiconductor storage device where a plurality of memory cells obtained by connecting a vertical transistor and a phase-change element in parallel is formed along a direction perpendicular to a main face of a semiconductor substrate, highly-reliable selection operation is made possible with a further low voltage. A plurality of through-holes extending through insulating films and polysilicon layers is formed in regions at which word lines and bit lines intersect with each other. A plurality of vertical chain memories composed of a gate insulating film | 2013-08-08 |
| 20130200332 | TRANSISTOR ARRANGEMENT AND A METHOD OF FORMING A TRANSISTOR ARRANGEMENT - In an embodiment, a transistor arrangement is provided. The transistor arrangement comprises a nanowire including a first nanowire region and a second nanowire region; a first gate contact disposed over the first nanowire region; an insulating region disposed over the second nanowire region; a second gate contact disposed over the insulating region; wherein the first nanowire region and the first gate contact forms a part of an enhancement mode transistor and the second nanowire region, the insulating region and the second gate contact forms a part of a depletion mode transistor. A method of forming a transistor arrangement may also be provided. Also contemplated is a transistor and a method for forming said transistor, where the transistor comprises a nanowire and a gate contact, where the gate contact is formed by directly writing the gate contact onto a region of the nanowire. | 2013-08-08 |
| 20130200333 | SEMICONDUCTOR LIGHT-EMITTING ELEMENT WITH CORTEX-LIKE NANOSTRUCTURES - The present invention is to provide a semiconductor light-emitting element. The element comprises a substrate and a nanostructural layer. The nanostructural layer is formed on the substrate and comprises a plurality of void-embedded cortex-like nanostructures, wherein the volumetric porosity of the nanostructural layer is ranged from 30% to 59%. Compared with the prior art, the present invention can not only improve the crystalline quality of epitaxial layers but also enhance the external quantum efficiency (EQE) of the semiconductor light-emitting element. | 2013-08-08 |
| 20130200334 | APPLICATION OF SEMICONDUCTOR QUANTUM DOT PHOSPHORS IN NANOPILLAR LIGHT EMITTING DIODES - A quantum well-based p-i-n light emitting diode is provided that includes nanopillars with an average linear dimension of between 50 nanometers and 1 micron. The nanopillars include a laminar layer of quantum wells capable of non-radiative energy transfer to quantum dot nanocrystals. Quantum dot-Quantum well coupling through the side walls of the nanopillar-configured LED structure achieves a close proximity between quantum wells and quantum dots while retaining the overlying contact electrode structures. A white LED with attractive properties relative to conventional incandescent and fluorescence lighting devices is produced. | 2013-08-08 |
| 20130200335 | LIGHT EMITTING DEVICE PACKAGE - Provided is a light emitting device package. The light emitting device package comprises a body formed of a silicon-based material; an insulating layer having a first opening on a surface of the body; a first and second metal layers disposed on the insulating layer; a light emitting device having a plurality of compound semiconductor layers disposed on a top surface of the body and connected to the first and second metal layers; and a protection device disposed on the body and electrically connected to the light emitting device, wherein the insulating layer has a second opening on a bottom surface of the body, wherein a first portion of the first metal layer is connected to the protective device and is disposed in the second opening of the insulating layer. | 2013-08-08 |
| 20130200336 | METHOD FOR PRODUCING AN ORGANIC SEMICONDUCTOR DEVICE - A method for producing an organic semiconductor device ( | 2013-08-08 |
| 20130200337 | ORGANIC ELECTROLUMINESCENT ELEMENT MATERIAL, ORGANIC ELECTROLUMINESCENT ELEMENT COMPOSITION, ORGANIC ELECTROLUMINESCENT ELEMENT, DISPLAY DEVICE, AND LIGHTING DEVICE - The present invention relates to a polymer comprising a repeating unit represented by the specific general formula (1) and a cross-linkable group. | 2013-08-08 |
| 20130200338 | AMINE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - An amine-based compound and an organic light-emitting diode including the amine-based compound. | 2013-08-08 |
| 20130200339 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE INCLUDING THE SAME - A heterocyclic compound includes a compound represented by Formula 1. | 2013-08-08 |
| 20130200340 | IRIDIUM COMPLEX COMPOUND, ORGANIC ELECTROLUMINESCENT ELEMENT MATERIAL, ORGANIC ELECTROLUMINESCENT ELEMENT, ILLUMINATION DEVICE AND DISPLAY DEVICE - An organic electroluminescent element in which at least one organic layer including a light emitting layer is sandwiched between an anode and a cathode,
| 2013-08-08 |
| 20130200341 | Electronic Device Comprising an Organic Semiconducting Material - The present invention relates to an electronic device comprising at least one organic semiconducting material according to the following formula (I): wherein R | 2013-08-08 |
| 20130200342 | DISPLAY APPARATUS - A display apparatus including a display panel including an array substrate and display unit on the array substrate; a polarizing film on one surface of the display panel; and a deformation prevention member on another surface of the display panel, the other surface being opposite to the one surface on which the polarizing film is disposed, the deformation prevention member preventing deformation of the display panel. | 2013-08-08 |
| 20130200343 | SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF FORMING MULTILAYER SEMICONDUCTOR THIN FILM - A semiconductor device including a gate electrode, a gate insulating layer, source/drain electrodes, and a channel-forming region that are disposed on a base is provided. The method includes the steps of forming a thin film by application of a mixed solution including a polymeric insulating material and a dioxaanthanthrene compound represented by structural formula (1) below; and subsequently drying the thin film to induce phase separation of the polymeric insulating material and the dioxaanthanthrene compound, thereby forming the gate insulating layer from the polymeric insulating material and the channel-forming region from the dioxaanthanthrene compound: | 2013-08-08 |
| 20130200344 | Oxadiazole Derivative, and Light Emitting Element, Light Emitting Device, and Electronic Device Using the Oxadiazole Derivative - An oxadiazole derivative represented by the following general formula (G1) is synthesized and applied to the light emitting element, | 2013-08-08 |
| 20130200345 | Photocurable Polymeric Materials and Related Electronic Devices - Disclosed are photocurable polymers that can be used as active and/or passive organic materials in various electronic, optical, and optoelectronic devices. In some embodiments, the device can include a dielectric layer prepared from such photocurable polymers. In some embodiments, the device can include a passivation layer prepared from the polymers described herein. | 2013-08-08 |
| 20130200346 | ORGANIC ELECTROLUMINESCENCE DISPLAY DEVICE AND METHOD FOR DRIVING THE SAME - In an organic electroluminescence display device ( | 2013-08-08 |
| 20130200347 | ORGANIC ELECTROLUMINESCENCE DEVICE, DISPLAY UNIT INCLUDING THE SAME, AND METHOD OF MANUFACTURING AN ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device includes a first electrode, an organic layer formed on the first electrode and including a light-emitting layer, an intermediate layer formed on the organic layer; and a second electrode formed on the intermediate layer and having a thickness of 6 nm or less. | 2013-08-08 |
| 20130200348 | ORGANIC LIGHT-EMITTING MATERIAL, DEVICE AND METHOD - Composition having an organic semiconducting material and a triplet-accepting material of formula (I) with a triplet energy level lower than the triplet energy level of the organic semiconducting material, in which each Ar is optionally substituted aryl or heteroaryl group, n is 1-3, m is 1-5, q is 0 or 1, each R | 2013-08-08 |
| 20130200349 | COMPOSITION CONTAINING POLYMER COMPOUND AND LIGHT-EMITTING DEVICE USING THE SAME - It is an object of the present invention to provide a composition using a polymer compound, which is useful for manufacturing a blue phosphorescent light-emitting device excellent in luminous efficiency. The present invention provides a composition including: a polymer compound substantially consisting of a constitutional unit selected from a constitutional unit represented by Formula (1)-1 below, a constitutional unit represented by Formula (1)-2 below, a constitutional unit represented by Formula (2)-1 below, a constitutional unit represented by Formula (2)-2 below, and a constitutional unit derived from a phosphorescent light-emitting compound having a light-emitting spectrum peak at smaller than 480 nm and the polymer compound containing at least both of the constitutional unit represented by Formula (1)-1 and the constitutional unit represented by Formula (1)-2; and a phosphorescent light-emitting compound having a light-emitting spectrum peak at smaller than 480 nm. | 2013-08-08 |
| 20130200350 | ORGANIC ELECTROLUMINESCENT DEVICE - Provided is an organic electroluminescent device (organic EL device) that is improved in luminous efficiency, sufficiently secures driving stability, and has a simple configuration. The device comprises a plurality of organic layers between an anode and a cathode piled one upon another on a substrate wherein at least one of the organic layers contains a nitrogen-containing organic compound represented by the following formula (1). In formula (1), X is N-A, an oxygen atom, or a sulfur atom; A is an alkyl group, a cycloalkyl group, an aromatic hydrocarbon group, or an aromatic heterocyclic group; and R is a hydrogen atom, an alkyl group, a cycloalkyl group, an aromatic hydrocarbon group, or an aromatic heterocyclic group. | 2013-08-08 |
| 20130200351 | POLYMER COMPOUND AND ORGANIC PHOTOELECTRIC CONVERSION DEVICE - A polymer compound comprising a repeating unit represented by the formula (1) is useful for an organic photoelectric conversion device: | 2013-08-08 |
| 20130200352 | ELECTROLUMINESCENT DEVICE - An electroluminescent device ( | 2013-08-08 |
| 20130200353 | CHARGE CARRIER MODULATION FOR COLOR AND BRIGHTNESS COORDINATION IN ORGANIC LIGHT-EMITTING DIODES - The device for charge carrier modulation is a current-controlled component, which has semiconductor layers arranged on top of each other. The organic semiconductor layers arranged on top of each other are an electron transport layer, which is arranged between a first and a second hole transport layer, and/or a hole transport layer, which is arranged between a first and a second electron transport layer. The respective central layer is the modulation layer having a contact for a modulation voltage. By applying a modulation voltage, a modulation current flow is generated over the modulation layer. The modulation current flow influences the component current flow which flows from the first into the second hole or electron transport layer via the respective modulation layer. | 2013-08-08 |
| 20130200354 | Conjugated Polymers and Their Use in Optoelectronic Devices - Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes. | 2013-08-08 |
| 20130200355 | Conjugated Polymers and Their Use in Optoelectronic Devices - Disclosed are certain polymeric compounds and their use as organic semiconductors in organic and hybrid optical, optoelectronic, and/or electronic devices such as photovoltaic cells, light emitting diodes, light emitting transistors, and field effect transistors. The disclosed compounds can provide improved device performance, for example, as measured by power conversion efficiency, fill factor, open circuit voltage, field-effect mobility, on/off current ratios, and/or air stability when used in photovoltaic cells or transistors. The disclosed compounds can have good solubility in common solvents enabling device fabrication via solution processes. | 2013-08-08 |
| 20130200356 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME AND DISPLAY INCLUDING THE ORGANIC LIGHT EMITTING DIODE - A compound for an organic optoelectronic device is represented by Chemical Formula 1: | 2013-08-08 |
| 20130200357 | FORMULATIONS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to a formulation, in particular for use in organic electroluminescent devices, comprising a carbazole compound, an electron-transport compound, a triplet emitter compound and at least one solvent, where the electron-transport compound encompasses a ketone compound or a triazine compound and where the carbazole compound contains at least two carbazole groups whose N atoms are connected to one another via an aromatic or heteroaromatic ring system. The invention is furthermore directed to organic electro-luminescent devices which comprise the mixtures according to the invention. | 2013-08-08 |
| 20130200358 | OLED DEVICE WITH A BRIGHTNESS DISTRIBUTION CONTROLLING MEANS - The invention describes an OLED device ( | 2013-08-08 |
| 20130200359 | TRIPHENYLENE-BASED MATERIALS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to compounds of the formula (1) and (2) which are suitable for use in electronic devices, in particular organic electroluminescent devices. | 2013-08-08 |
| 20130200360 | ORGANIC ELECTROLUMINESCENT ELEMENT - The organic electroluminescent element ( | 2013-08-08 |
| 20130200361 | THIN FILM TRANSISTOR HAVING AN ACTIVE LAYER CONSISTING OF MULTIPLE OXIDE SEMICONDUCTOR LAYERS - A thin film transistor includes a substrate, a gate electrode, and an active layer formed on the substrate. The active layer includes a channel region, a source region and a drain region located at two lateral portions of the channel region. The active layer includes a first oxide semiconductor material layer and a second oxide semiconductor material layer stacked to each other. Material of the first oxide semiconductor material layer is different from material of the second oxide semiconductor material layer. A gate insulating layer is formed between the channel region and the gate electrode. A source electrode electrically connects the source region. A drain electrode electrically connects the drain region. | 2013-08-08 |
| 20130200362 | THIN FILM TRANSISTOR - A thin film transistor (TFT) is provided, which includes a gate, a semiconductor layer, an insulation layer, a source and a drain. The semiconductor layer has a first end and a second end opposite to the first end. The insulation layer is disposed between the gate and the semiconductor layer. The source clamps the first end of the semiconductor layer and the drain clamps the second end of the semiconductor layer. | 2013-08-08 |
| 20130200363 | SEMICONDUCTOR DEVICE AND A METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE - There is provided a readily manufacturable semiconductor device including two transistors having mutually different characteristics. The semiconductor device includes a substrate, a multilayer wiring layer disposed over the substrate, a first transistor disposed in the multilayer wiring layer, and a second transistor disposed in a layer different from a layer including the first transistor disposed therein of the multilayer wiring layer, and having different characteristics from those of the first transistor. This can provide a readily manufacturable semiconductor device including two transistors having mutually different characteristics. | 2013-08-08 |
| 20130200364 | THIN-FILM TRANSISTOR, DISPLAY UNIT, AND ELECTRONIC APPARATUS - A thin-film transistor includes: a gate electrode; a gate insulating film disposed on the gate electrode; an oxide semiconductor layer disposed on the gate insulating film and having a channel region located to face the gate electrode; a channel protective layer disposed on the gate insulating film and the oxide semiconductor layer; and source and drain electrodes each connected to the oxide semiconductor layer through a connection hole formed in the channel protective layer, in which the oxide semiconductor layer has, in a part of the channel region, a narrow region with a narrower width than a width of the connection hole. | 2013-08-08 |
| 20130200365 | SEMICONDUCTOR DEVICE - A semiconductor device in which release of oxygen from side surfaces of an oxide semiconductor film including c-axis aligned crystal parts can be prevented is provided. The semiconductor device includes a first oxide semiconductor film, a second oxide semiconductor film including c-axis aligned crystal parts, and an oxide film including c-axis aligned crystal parts. In the semiconductor device, the first oxide semiconductor film, the second oxide semiconductor film, and the oxide film are each formed using a IGZO film, where the second oxide semiconductor film has a higher indium content than the first oxide semiconductor film, the first oxide semiconductor film has a higher indium content than the oxide film, the oxide film has a higher gallium content than the first oxide semiconductor film, and the first oxide semiconductor film has a higher gallium content than the second oxide semiconductor film. | 2013-08-08 |
| 20130200366 | SEMICONDUCTOR DEVICE - To provide a highly reliable semiconductor device in which a transistor including an oxide semiconductor film has stable electric characteristics. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer which is over the oxide semiconductor film so as to overlap with the gate electrode layer, and a source electrode layer provided so as to cover part of an outer edge portion of the oxide semiconductor film. An outer edge portion of the drain electrode layer is on an inner side than an outer edge portion of the gate electrode layer. | 2013-08-08 |
| 20130200367 | SEMICONDUCTOR DEVICE - An object of one embodiment of the present invention is to provide a highly reliable semiconductor device by giving stable electric characteristics to a transistor including an oxide semiconductor film. The semiconductor device includes a gate electrode layer over a substrate, a gate insulating film over the gate electrode layer, an oxide semiconductor film over the gate insulating film, a drain electrode layer provided over the oxide semiconductor film to overlap with the gate electrode layer, and a source electrode layer provided to cover an outer edge portion of the oxide semiconductor film. The outer edge portion of the drain electrode layer is positioned on the inner side than the outer edge portion of the gate electrode layer. | 2013-08-08 |
| 20130200368 | SEMICONDUCTOR DEVICE - A semiconductor device with significantly low off-state current is provided. An oxide semiconductor material in which holes have a larger effective mass than electrons is used. A transistor is provided which includes a gate electrode layer, a gate insulating layer, an oxide semiconductor layer including a hole whose effective mass is 5 or more times, preferably 10 or more times, further preferably 20 or more times that of an electron in the oxide semiconductor layer, a source electrode layer in contact with the oxide semiconductor layer, and a drain electrode layer in contact with the oxide semiconductor layer. | 2013-08-08 |
| 20130200369 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a first signal line, a second signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line, a second driver circuit electrically connected to the first signal line, a third driver circuit electrically connected to the second signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 2013-08-08 |
| 20130200370 | LOGIC CIRCUIT AND SEMICONDUCTOR DEVICE - A logic circuit includes a thin film transistor having a channel formation region formed using an oxide semiconductor, and a capacitor having terminals one of which is brought into a floating state by turning off the thin film transistor. The oxide semiconductor has a hydrogen concentration of 5×10 | 2013-08-08 |
| 20130200371 | DEVICE FOR DETECTING A LASER ATTACK IN AN INTEGRATED CIRCUIT CHIP - A device for detecting a laser attack in an integrated circuit chip formed in the upper P-type portion of a semiconductor substrate incorporating an NPN bipolar transistor having an N-type buried layer, including a detector of the variations of the current flowing between the base of said NPN bipolar transistor and the substrate. | 2013-08-08 |
| 20130200372 | THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF - The present invention provides a structure of the TFT in which a current-voltage characteristic can be improved. The present invention refers to a thin film transistor comprising a lamination layer wherein a first conductive film, a first insulating film and a second conductive film are sequentially laminated, a semiconductor film formed so as to be in contact with the side surface of the lamination layer, and a third conductive film covering the semiconductor film through a second insulating film. The first conductive film and the second conductive film are a source electrode and a drain electrode, and a region which is in contact with the first insulating film and the third conductive film is a channel forming region in semiconductor film, and the third conductive film is a gate electrode. | 2013-08-08 |
| 20130200373 | DISPLAY DEVICE - The present invention provides an inexpensive display device that includes an ion sensor portion and a display and that can be miniaturized. The present invention is a display device that includes an ion sensor portion including an ion sensor circuit and a display including a display-driving circuit. The display device has a substrate, and at least one portion of the ion sensor circuit and at least one portion of the display-driving circuit are formed on the same main surface of the substrate. | 2013-08-08 |
| 20130200374 | Thin Film Transistor, Thin Film Transistor Substrate and Method for Manufacturing the Same - A thin film transistor is provided. The thin film transistor disposed on a substrate includes a gate electrode, a gate dielectric layer, a patterned semiconductor layer, a source electrode, a drain electrode covered with an anticorrosive conductive layer, a patterned passivation layer and a transparent conductive layer. The anticorrosive conductive layer includes indium tin oxide or indium zinc oxide, and is used to prevent the drain electrode from being over etched during the process of etching the passivation layer. A method for manufacturing the thin film transistor is also provided herein. | 2013-08-08 |
| 20130200375 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - Provided is a highly reliable semiconductor device which includes a transistor including an oxide semiconductor. The semiconductor device includes an oxide semiconductor layer; a gate insulating layer provided over the oxide semiconductor layer; a gate electrode layer overlapping with the oxide semiconductor layer with the gate insulating layer provided therebetween; an insulating layer being in contact with part of an upper surface of the oxide semiconductor layer, covering a side surface of the gate insulating layer and a side surface and an upper surface of the gate electrode layer, and having a lower oxygen-transmitting property than the gate insulating layer; a sidewall insulating layer provided on the side surface of the gate electrode layer with the insulating layer provided therebetween; a source electrode layer and a drain electrode layer which are electrically connected to the oxide semiconductor layer. | 2013-08-08 |
| 20130200376 | TRANSISTOR AND SEMICONDUCTOR DEVICE - A transistor which is resistant to a short-channel effect is provided. A semiconductor which leads to the following is used in a junction portion between a source and a semiconductor layer and a junction portion between a drain and the semiconductor layer: a majority carrier density n | 2013-08-08 |
| 20130200377 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor (TFT) array substrate and a method for manufacturing the same. After depositing a first metal layer on a substrate, a first mask is utilized to form gate electrodes. After depositing a gate insulating layer and a semiconductor layer on the substrate, a second mask is utilized to pattern the semiconductor layer, so as to keep portions of the semiconductor layer above the gate electrodes. After depositing a transparent and electrically conductive layer and a second metal layer on the substrate, a multi tone mask is utilized to form source electrodes, drain electrodes, pixel electrodes and common electrodes. The present invention can simplify the manufacturing process thereof. | 2013-08-08 |
| 20130200378 | METHOD AND APPARATUS FOR FORMING ORGANIC MATERIAL PATTERN, ORGANIC LIGHT EMITTING DISPLAY APPARATUS, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY APPARATUS - A method and an apparatus for forming an organic material pattern in a desired pattern on a substrate to improve device durability and image quality characteristics, an organic light emitting display apparatus, and a method of manufacturing an organic light emitting display apparatus, are provided. The apparatus includes a heater overlapping with a region of the substrate different from another region of the substrate in which the organic material pattern is to be formed, a power source for applying a voltage to the heater, and wiring for electrically connecting the power source with the heater. | 2013-08-08 |
| 20130200379 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, ORGANIC LIGHT-EMITTING DISPLAY DEVICE INCLUDING THE SAME AND METHOD OF MANUFACTURING THE THIN FILM TRANSISTOR ARRAY SUBSTRATE - A thin film transistor (TFT) array substrate includes a TFT including an active layer, a gate electrode, source and drain electrodes, a first insulating layer between the active layer and the gate electrode, and a second insulating layer and a third insulating layer between the gate electrode and the source and drain electrodes, the first insulating layer and the second insulating layer extending in the TFT, a pixel electrode including a transparent conductive oxide material, the pixel electrode being on the first insulating layer and the second insulating layer and being connected to the source or drain electrodes via an opening in the third insulating layer, a capacitor including a first electrode on a same layer as the gate electrode and a second electrode on a same layer as the pixel electrode; and a fourth insulating layer covering the source and drain electrodes and exposing the pixel electrode via an opening. | 2013-08-08 |
| 20130200380 | ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE - An organic electroluminescent display device includes a bottom substrate, a covering substrate, a pixel controlling unit, a first organic light emitting unit, and a second organic light emitting unit. The covering substrate is disposed oppositely to the bottom substrate. The pixel controlling unit is disposed between the bottom substrate and the covering substrate. The first organic light emitting unit is disposed between the pixel controlling unit and the covering substrate. The second organic light emitting unit is disposed between the pixel controlling unit and the bottom substrate. The pixel controlling unit is electrically connected to the first organic light emitting unit and the second organic light emitting unit. | 2013-08-08 |
| 20130200381 | Display Panel Circuit Structure - A display panel circuit structure includes a substrate, a first metal layer, a second metal layer, and a third metal layer. The first metal layer is disposed on the substrate. The second metal layer is disposed on the first metal layer and electrically connected to the first metal layer, in which the second metal layer has a pad area and a trace area connected to the pad area. The line width of the second metal layer in the pad area is greater than the line width of the second metal layer in the trace area. The third metal layer is disposed on the second metal layer, in which the third metal layer does not overlap the second metal layer n the trace area. | 2013-08-08 |
| 20130200382 | THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING A THIN-FILM TRANSISTOR SUBSTRATE - In a thin-film transistor (“TFT”) substrate and a method of manufacturing a TFT substrate, the TFT substrate includes a base substrate, a gate pattern, a source pattern and a pixel electrode. One of the gate pattern and the source pattern includes a pure copper layer, and a conductive layer under the pure copper layer. The conductive layer includes a copper alloy oxide, a copper alloy nitride or a copper alloy oxynitride. | 2013-08-08 |
| 20130200383 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD FOR THE SAME - The present invention discloses a thin film transistor array substrate and a manufacturing method for the same. A transparent conductive layer and a first metal layer are deposited on a substrate, and a multi-tone mask is utilized to form a gate electrode and a common electrode. A gate insulative layer and a semi-conductive layer are deposited on the substrate with the gate electrode and the common electrode, and the semi-conductive layer is patterned by a second mask to retain a region of the semi-conductive layer that is there-above the gate electrode. A second metal layer is deposited on the substrate with the gate insulative layer along with the retained semi-conductive layer, and the second metal layer is patterned by a third mask to form a source electrode, a drain electrode, and a pixel electrode. The present invention provides a simple manufacturing method. | 2013-08-08 |
| 20130200384 | ATOMIC LAYER DEPOSITION EPITAXIAL SILICON GROWTH FOR TFT FLASH MEMORY CELL - A method of growing an epitaxial silicon layer is provided. The method comprising providing a substrate including an oxygen-terminated silicon surface and forming a first hydrogen-terminated silicon surface on the oxygen-terminated silicon surface. Additionally, the method includes forming a second hydrogen-terminated silicon surface on the first hydrogen-terminated silicon surface through atomic-layer deposition (ALD) epitaxy from SiH | 2013-08-08 |
| 20130200385 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - The present invention provides a thin film transistor (TFT) array substrate and a method for manufacturing the same. A transparent and electrically conductive layer and a first metal layer are deposited on a substrate, and a first multi tone mask is utilized to form gate electrodes and common electrodes. A gate insulating layer, a semiconductor layer and a second metal layer are deposited on the substrate, and a second multi tone mask is utilized to form source electrodes, drain electrodes and pixel electrodes. The present invention can simplify the manufacturing process thereof. | 2013-08-08 |
| 20130200386 | CRYSTALLIZATION OF MULTI-LAYERED AMORPHOUS FILMS - In one aspect, crystallization of multiple layers of amorphous materials is disclosed. In one embodiment, multiple layers of amorphous materials such as amorphous silicon, silicon carbide, and/or germanium are deposited using deposition methods such as PECVD or sputtering. A layer of metal such as aluminum is deposited on the surface of the deposited amorphous materials using sputtering or evaporation, and the structure is annealed in a hydrogen environment. The structure is contained on a semiconductor substrate, glass, a flexible metal/organic film, or other type of substrate. | 2013-08-08 |
| 20130200387 | NITRIDE BASED HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride based heterojunction semiconductor device includes a GaN layer on a substrate, an Al-doped GaN layer on the GaN layer, an AlGaN layer on the Al-doped GaN layer, a source electrode, a gate electrode, and a drain electrode on the AlGaN layer, a first field plate on the AlGaN layer, the first field plate being in contact with the gate electrode, and a second field plate on the AlGaN layer, the second field plate being separated from the first field plate by a distance. | 2013-08-08 |
| 20130200388 | NITRIDE BASED HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride based heterojunction semiconductor device includes a gallium nitride (GaN) layer disposed on a substrate, an aluminum (Al)-doped GaN layer disposed on the GaN layer, a Schottky electrode disposed in a first area on the Al-doped GaN layer, an AlGaN layer disposed in a second area on the Al-doped GaN layer, and an ohmic electrode disposed on the AlGaN layer. The first area is different from the second area. | 2013-08-08 |
| 20130200389 | NITRIDE BASED HETEROJUNCTION SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A nitride based heterojunction semiconductor device includes a gallium nitride (GaN) layer disposed on a substrate, an aluminum (Al)-doped GaN layer disposed on the GaN layer, an AlGaN layer disposed on the Al-doped GaN layer, an ion-implanted layer disposed in an area on the AlGaN layer, excluding a first area and a second area. | 2013-08-08 |
| 20130200390 | SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - According to one embodiment, a semiconductor light-emitting device includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer including a nitride semiconductor, a light-emitting portion and a stacked body. The light-emitting portion is provided between the n-type and p-type semiconductor layers and includes a barrier layer and a well layer. The well layer is stacked with the barrier layer. The stacked body is provided between the light-emitting portion and the n-type semiconductor layer and includes a first layer and a second layer. The second layer is stacked with the first layer. Average In composition ratio of the stacked body is higher than 0.4 times average In composition ratio of the light-emitting portion. The layer thickness t | 2013-08-08 |
| 20130200391 | GALLIUM NITRIDE BASED STRUCTURES WITH EMBEDDED VOIDS AND METHODS FOR THEIR FABRICATION - A gallium nitride-based structure includes a substrate, a first layer of gallium nitride disposed on a growth surface of the substrate, and a second gallium nitride layer disposed on the first gallium nitride layer. The first layer includes a region in which a plurality of voids is dispersed. The second layer has a lower defect density than the gallium nitride of the interfacial region. The gallium nitride-based structure is fabricated by depositing GaN on the growth surface to form the first layer, forming a plurality of gallium nitride nanowires by removing gallium nitride from the first layer, and growing additional GaN from facets of the nanowires. Gallium nitride crystals growing from neighboring facets coalesce to form a continuous second layer, below which the voids are dispersed in the first layer. The voids serve as sinks or traps for crystallographic defects, and also as expansion joints that ameliorate thermal mismatch between the Ga.N and the underlying substrate. The voids also provide improved light transmission properties in optoelectronic applications. | 2013-08-08 |
| 20130200392 | Semicondictor Device with Edge Termination and Method for Manufacturing a Semiconductor Device - According to an embodiment, a semiconductor device includes a semiconductor body having a first semiconductor material and a second semiconductor material having a band gap larger than a band gap of the first semiconductor material. A first pn-junction is formed in the first semiconductor material. A second pn-junction is formed by the second semiconductor material and extends deeper into the semiconductor body than the first pn-junction. The second semiconductor material is in contact with the first semiconductor material and forms part of an edge termination zone of the semiconductor device. | 2013-08-08 |
| 20130200393 | SEMICONDUCTOR STRUCTURE AND PROCESS THEREOF - A semiconductor structure includes a substrate, a resist layer, a dielectric material, two U-shaped metal layers and two metals. The substrate has an isolation structure. The resist layer is located on the isolation structure. The dielectric material is located on the resist layer. Two U-shaped metal layers are located at the two sides of the dielectric material and on the resist layer. Two metals are respectively located on the two U-shaped metal layers. This way a semiconductor process for forming said semiconductor structure is provided. | 2013-08-08 |
| 20130200394 | SEMICONDUCTOR-ON-DIAMOND DEVICES AND ASSOCIATED METHODS - Semiconductor-on-diamond devices and methods for making such devices are provided. One such method may include depositing a semiconductor layer on a semiconductor substrate, depositing an adynamic diamond layer on the semiconductor layer opposite the semiconductor substrate, and coupling a support substrate to the adynamic diamond layer opposite the semiconductor layer to support the adynamic layer. | 2013-08-08 |
| 20130200395 | LAYOUT FOR MULTIPLE-FIN SRAM CELL - The present disclosure provides a static random access memory (SRAM) cell. The SRAM cell includes a plurality of fin active regions formed on a semiconductor substrate, wherein the plurality of fin active regions include a pair adjacent fin active regions having a first spacing and a fin active region having a second spacing from adjacent fin active regions, the second spacing being greater than the first spacing; a plurality of fin field-effect transistors (FinFETs) formed on the plurality of fin active regions, wherein the plurality of FinFETs are configured to a first and second inverters cross-coupled for data storage and at least one port for data access; a first contact disposed between the first and second the fin active regions, electrically contacting both of the first and second the fin active regions; and a second contact disposed on and electrically contacting the third fin active region. | 2013-08-08 |
| 20130200396 | PREVENTION OF LIGHT LEAKAGE IN BACKSIDE ILLUMINATED IMAGING SENSORS - An apparatus includes a semiconductor layer, a dielectric layer, and a light prevention structure. The semiconductor layer has a front surface and a backside surface. The semiconductor layer includes a light sensing element and a periphery circuit region containing a light emitting element and not containing the light sensing element. The dielectric layer contacts at least a portion of the backside surface of the semiconductor layer. At least a portion of the light prevention structure is disposed between the light sensing element and the light emitting element. The light prevention structure is positioned to prevent light emitted by the light emitting element from reaching the light sensing element. | 2013-08-08 |
| 20130200397 | SEMICONDUCTOR DEVICE - According to one embodiment, a semiconductor device includes an input lead, a light emitting element, an output lead, a light receiving element and a resin molded body. The input lead includes an input inner lead portion, an input outer lead portion and a first silver layer. The light emitting element is provided on the first silver layer. The output lead includes an output inner lead portion, an output outer lead portion and a second silver layer. The second silver layer includes an upper surface portion and a side surface portion. The light receiving element is provided on the second silver layer and is capable of receiving light. The output lead includes a cutting surface extending from the side surface portion of the second silver layer to the side surface of the output inner lead portion. The resin molded body covers the cutting surface. | 2013-08-08 |
| 20130200398 | LIGHT EMITTING DIODE WITH WAVELENGTH CONVERSION LAYER - A light-emitting device comprises a base, a light-emitting unit comprising a semiconductor stack disposed on the base, and a wavelength conversion layer covering the light-emitting unit, wherein the wavelength conversion layer does not physically contact the base. | 2013-08-08 |
| 20130200399 | DISPLAY DEVICE - A display device includes a first insulation layer on a substrate, gate wires on the first insulation layer, the gate wires extending in a first direction, a second insulation layer on the gate wires, data wires on the second insulation layer, the data wires extending in a second direction crossing the first direction, pixels at intersection regions of gate wires and data wires, respectively, the pixels being connected to respective gate wires and data wires, and data leading diodes having an island form and connected to the data wires, the data leading diodes being configured to induce breakage of the first insulation layer when external static electricity passes through the data wires. | 2013-08-08 |
| 20130200400 | PCB HAVING INDIVIDUAL REFLECTIVE STRUCTURE AND METHOD FOR MANUFACTURING LIGHT EMITTING DIODE PACKAGE USING THE SAME - A printed circuit board (PCB) having an individual reflective structure and a method for manufacturing a light emitting diode (LED) package using the same, which can prevent reabsorption of light between LED chips by providing an individual reflective structure between the LED chips when the LED package is configured using two or more LED chips. The PCB includes a PCB; a wiring pattern-forming material layer formed on the PCB with an insulating layer interposed therebetween; dams formed on the wiring pattern-forming layer around chip mounting areas of the PCB; and a light reabsorption prevention dam formed on the wiring pattern-forming material layer between the chip mounting areas where LED chips are mounted. | 2013-08-08 |
| 20130200401 | CIRCUIT SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND ELECTROOPTICAL DEVICE - A circuit substrate includes, on an insulating substrate, a plurality of devices, a plurality of conductive layers connected in one-to-one correspondence with the devices, and an insulating layer provided between the devices and the conductive layers. The insulating layer includes a first insulating layer covering the devices, a second insulating layer formed on the first insulating layer, and a plurality of contact holes each passing through the first and second insulating layers in a thickness direction thereof. Side surfaces of the first and second insulating layers contact each other in at least part of the inside of each contact hole. Each conductive layer extends along an upper surface of the second insulating layer, at least a part of a side surface of the contact hole in which the side surfaces of the first and second insulating layers contact each other, and a bottom surface of the contact hole. | 2013-08-08 |
| 20130200402 | LIGHT-EMITTING MODULE - A light-emitting module includes a plate substrate, two circuit substrates, at least one LED chip, a plurality of wires and a molding component. The plate substrate includes a plurality of chip carriers protrudingly arranged from an upper surface and a lower surface of the plate substrate. The two circuit substrates directly stack on the upper and lower surface of the plate substrate, respectively, wherein a plurality of openings are arranged corresponding to the chip carriers penetrating therethrough and the upper surface of each chip carrier is at a higher or the same horizontal of the surface of the corresponding circuit substrate. The LED chip is arranged on each chip carrier. Each LED chip and the corresponding circuit substrates are electrically connected with a plurality of wires. Each of LED chips, each of chip carriers, wires and a portion of the circuit substrates are covered with the molding component. | 2013-08-08 |
| 20130200403 | PACKAGE STRUCTURE FOR SEMICONDUCTOR LIGHT EMITTING DEVICE - A package structure for a semiconductor light emitting device is provided. The package structure includes a semiconductor light emitting device, a lead frame, an electrostatic discharge protection device and an encapsulation. The lead frame supports the semiconductor light emitting device, and has a gap. The electrostatic discharge protection device is fastened in the gap and electrically connected to the lead frame. The encapsulation covers the lead frame, the semiconductor light emitting device and the electrostatic discharge protection device. | 2013-08-08 |
| 20130200404 | THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor display panel includes: a gate electrode, a source electrode and a drain electrode which are included in a thin film transistor on a substrate; a data line connected to the source electrode; a pixel link member connecting the drain electrode to a pixel electrode; and a gate pad connected to the gate electrode through a gate line and including a first gate subpad, a second gate subpad and a gate pad link member, in which the pixel link member and the gate pad link member are substantially same in thickness. | 2013-08-08 |
| 20130200405 | Optoelectronic Semiconductor Component - An optoelectronic semiconductor component includes a substrate that has an upper side and an under side lying opposite the upper side. The substrate is formed with an electrically conductive mounting region, an electrically conductive connection region and an electrically isolating oxidation region. An optoelectronic part is arranged on the upper side of the substrate in the region of the mounting region. The oxidation region electrically isolates the mounting region from the connection region. The oxidation region extends, without interruption, from the upper side of the substrate to the underside of the substrate. The mounting region and the connection region are formed with aluminum and the oxidation region is formed with an oxide of the aluminum. The mounting region, the oxidation region and the connection region being are designed contiguously to form an entity. | 2013-08-08 |
| 20130200406 | CERAMIC-BASED LIGHT EMITTING DIODE (LED) DEVICES, COMPONENTS, AND METHODS - Devices, components and methods containing one or more light emitter devices, such as light emitting diodes (LEDs) or LED chips, are disclosed. In one aspect, a light emitter device component can include a ceramic body having a top surface, one or more light emitter devices mounted directly or indirectly on the top surface, and one or more electrical components mounted on the top surface and electrically coupled to the one or more light emitter devices, wherein the one or more electrical components can be spaced from the ceramic body by one or more non-metallic layers. Components disclosed herein can result in improved light extraction and thermal management. | 2013-08-08 |
| 20130200407 | DEFOCUSED OPTIC FOR MULTI - CHIP LED - A defocused optic ( | 2013-08-08 |
| 20130200408 | SOLID-STATE LIGHT EMITTING DEVICE - An exemplary embodiment of the present disclosure provides a solid-state light emitting device. The solid-state light emitting device includes a stair-type bowl, a plurality of light emitting chips, and an encapsulation glue. The stair-type bowl includes a base and a ring stair structure. The ring stair structure includes a plurality of ring tread surfaces and a plurality of ring riser surfaces connected to the ring tread surfaces. The ring stair structure is connected to the base. The base has a bottom surface. The ring stair structure surrounds the bottom surface and protrudes from the bottom surface. The light emitting chips are respectively disposed above the ring tread surfaces and the bottom surfaces. The stair-type bowl is filled with the encapsulation glue. The encapsulation glue covers the light-emitting chips. | 2013-08-08 |
| 20130200409 | SEMICONDUCTOR UNIT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - There are provided a semiconductor unit that prevents connection failure caused by a wiring substrate to improve reliability, a method of manufacturing the semiconductor unit, and an electronic apparatus including the semiconductor unit. The semiconductor unit includes: a device substrate including a functional device and an electrode; a first wiring substrate electrically connected to the functional device through the electrode; and a second wiring substrate electrically connected to the functional device through the first wiring substrate. | 2013-08-08 |
| 20130200410 | LED LAMP ASSEMBLY - Provided is a light emitting diode (LED) lamp assembly having an increased light incidence angle by fixing unit LED lamps fixed on a substrate at various angles. The LED lamp assembly includes a substrate having a socket portion and an LED mounting portion, first unit LED modules installed on both surfaces of the substrate and irradiating light onto the both surfaces of the substrate in a frontward direction, and second unit LED modules irradiating light onto the both surface of the substrate in directions other than the frontward direction. In the LED lamp assembly, since first and second unit LED modules having light irradiation units formed at different positions are installed on both surfaces of a single substrate, light can be irradiated in a radial direction. | 2013-08-08 |
| 20130200411 | OPTOELECTRONIC COMPONENT - An optoelectronic component includes a circuit board having a top side with a chip connection region, an optoelectronic semiconductor chip fixed to the chip connection region, a housing body fixed to the circuit board at the top side of the circuit board and having a reflector region, wherein the reflector region includes an opening in the housing body, the optoelectronic semiconductor chip being arranged in the opening, and the housing body is formed with a plastics material which is metallized at least in selected locations in the reflector region. | 2013-08-08 |
| 20130200412 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT - An optoelectronic semiconductor component includes a carrier and at least one optoelectronic semiconductor chip mounted on the carrier top. The semiconductor component includes at least one bonding wire, via which the semiconductor chip is electrically contacted, and at least one covering body mounted on a main radiation side and projects beyond the bonding wire. At least one reflective potting compound encloses the semiconductor chip laterally and extends at least as far as the main radiation side of the semiconductor chip. The bonding wire is covered completely by the reflective potting compound or completely by the reflective potting compound together with the covering body. | 2013-08-08 |
| 20130200413 | HEAT-CURABLE SILICONE RESIN SHEET HAVING PHOSPHOR-CONTAINING LAYER AND PHOSPHOR-FREE LAYER, METHOD OF PRODUCING LIGHT EMITTING DEVICE UTILIZING SAME AND LIGHT EMITTING SEMICONDUCTOR DEVICE OBTAINED BY THE METHOD - Provided is a heat-curable silicone resin sheet that is able to easily uniformly disperse phosphors on an LED element surface, a method of producing a light emitting device utilizing the same and an encapsulated light emitting semiconductor device obtained by the method utilizing the same. The heat-curable silicone resin sheet includes at least the two layers of a layer 1 including a heat-curable silicone resin composition containing phosphors that is in a plastic solid state or a semi-solid state at room temperature, and a layer 2 including a transparent or a semi-transparent heat-curable silicone resin composition that is in a plastic solid state or a semi-solid state at room temperature. | 2013-08-08 |
| 20130200414 | LIGHT-EMITTING DIODE DEVICE - An encapsulated light-emitting diode device is disclosed. The encapsulated light-emitting diode device includes a circuit carrier including a surface; a light-emitting device including a transparent substrate, the transparent substrate including a first surface and a second surface; a light-emitting diode chip located on the first surface of the transparent substrate; and a first transparent glue covering the light-emitting diode chip and formed on the first surface; wherein the first surface and the surface comprise an included angle larger than zero; wherein the first transparent glue has a circular projection on the first surface and the light-emitting diode chip is substantially located at the center of the circular projection. | 2013-08-08 |
| 20130200415 | LIGHT EMITTING DIODE DEVICE AND METHOD FOR PRODUCTION THEREOF CONTAINING CONVERSION MATERIAL CHEMISTRY - In one embodiment, a light emitting device comprises: a lighting element located in a housing, wherein the housing is formed from a polymer composition comprising: a polymer material; and a coated conversion material. The coated conversion material is selected from a coated conversion material, coated yttrium aluminum garnet (YAG) doped with rare earth elements, coated terbium aluminum garnet doped with rare earth elements, coated silicate (BOSE) doped with rare earth elements; coated nitrido silicates doped with rare earth elements; coated nitride orthosilicate doped with rare earth elements, coated oxonitridoaluminosilicates doped with rare earth elements; as well as combinations comprising at least one of the foregoing. After the coated conversion material has been exposed to an excitation source, the coated conversion material has a luminescence lifetime of less than 10 | 2013-08-08 |
| 20130200416 | LED MODULE - The present invention relates to a LED module which converts pump light from a LED chip ( | 2013-08-08 |
| 20130200417 | RADIATION-EMITTING COMPONENT AND METHOD FOR PRODUCING A RADIATION-EMITTING COMPONENT - A radiation-emitting component including a semiconductor chip having a semiconductor body with an active region that generates a primary radiation, and including a conversion element that at least partly converts the primary radiation, wherein the conversion element is fixed to the semiconductor chip with a connecting layer and a radiation conversion substance is formed in the connecting layer. | 2013-08-08 |
| 20130200418 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device. The semiconductor light emitting device includes a light emitting structure including a first conductive semiconductor layer, an active layer and a second conductive semiconductor layer. An electrode is on a bottom surface of the light emitting structure and an electrode layer and a conductive support member are disposed on the top surface of the light emitting structure. A recess is recessed from a top surface of the light emitting structure. A transmittive layer is between the light emitting structure and the electrode layer. The transmittive layer includes a first portion having a protrusion disposed in the recess. | 2013-08-08 |
| 20130200419 | SEMICONDUCTOR LIGHT EMITTING COMPONENT - A semiconductor light emitting component including an epitaxial structure, a first electrode, a second electrode, a first cutout structure and a second cutout structure is provided. The epitaxial structure includes a first type doped layer, a light emitting portion and a second type doped layer. The first electrode is formed on a surface of the first type doped layer. The second electrode is formed on a surface of the second type doped layer. The first cutout structure is formed in the first type doped layer to expose at least a portion of the first electrode. The second cutout structure is formed in the first type doped layer, the light emitting portion and the second type doped layer so as to expose at least a portion of the second electrode. | 2013-08-08 |
| 20130200420 | CERAMIC-BASED LIGHT EMITTING DIODE (LED) DEVICES, COMPONENTS, AND METHODS - A light emitter device component containing one or more light emitter devices, such as light emitting diodes (LEDs) or LED chips, can include a body that can be ceramic and have a top surface, one or more light emitting devices mounted directly or indirectly on the top surface, and one or more electrical components mounted on the top surface and electrically coupled to the one or more light emitting devices. At least a portion of the top surface of the body to which the light emitting devices are mounted can be modified to have a reduced porosity compared to an as-fired ceramic body. Such components can result in improved adhesion strength and thermal management of the light emitting devices. | 2013-08-08 |
| 20130200421 | Hybrid Transparent Conducting Materials - Illustrative embodiments of hybrid transparent conducting materials and applications thereof are disclosed. In one illustrative embodiment, a hybrid transparent conducting material may include a polycrystalline film and a plurality of conductive nanostructures randomly dispersed in the polycrystalline film. In another illustrative embodiment, a photovoltaic cell may include a transparent electrode comprising polycrystalline graphene that is percolation doped with metallic nanowires, where the metallic nanowires do not form a percolation network for charge carriers across the transparent electrode. | 2013-08-08 |
