31st week of 2011 patent applcation highlights part 14 |
Patent application number | Title | Published |
20110186764 | COUPLER WITH STOP VALVE - A coupler having a stop valve, in which one of the connectors comprises a cylindrical wall, and a fixed shaft arranged along a center axis of the cylindrical wall. A valve sheet is arranged around a leading end portion of the fixed shaft, and the valve sheet is tapered to widen a diameter thereof toward a leading end side of the fixed shaft. A cylindrical first valve element is fitted onto the fixed shaft in a manner to slide in its axial direction while being pushed by an elastic member, and an inner circumferential face of the first valve element is tapered at its leading end to be congruent with the taper of the valve sheet. An engagement portion which is diametrically larger than the leading end portion of the first valve element is formed on the outer circumferential face of the first valve element at an intermediate portion in the axial direction. The other connector comprises a cylindrical portion, and a pushing portion is formed at a leading end of the cylindrical portion for pushing the first valve element axially at the engagement portion. | 2011-08-04 |
20110186765 | SINGULATION OF VALVES - A method and apparatus for the singulation of valve plates and/or assembled valves from a lead-frame are described. The method and apparatus utilizes an electric current to fuse tabs which join the valve plate and/or the assembled valve to the lead-frame. The valve comprises a first and second valve plate with offsetting apertures and a flap disposed and movable between the first and second plates. | 2011-08-04 |
20110186766 | VALVE SEAL - A device in a valve ( | 2011-08-04 |
20110186767 | INTAKE VALVE FOR A CYLINDER OF THE HIGH-PRESSURE FUEL PUMP OF A COMMON RAIL INJECTION SYSTEM - An intake valve for a cylinder of the high-pressure fuel pump of a common rail injection system has a valve body with an inlet opening and a closing member. The closing member closes the inlet opening in a first end position. The member can be moved relative to the inlet opening depending on a pressure difference. The intake valve has a non-linear volumetric flow characteristic. | 2011-08-04 |
20110186768 | Valve Housing - The invention discloses a valve housing ( | 2011-08-04 |
20110186769 | METALLIC COMPOSITE COMPONENT, IN PARTICULAR FOR AN ELECTROMAGNETIC VALVE - A composite component includes at least two sections having different magnetization, the at least two sections in the integrally formed component lying directly next to each other. The base material of the composite component is a semi-austenitic steel. A first section has a higher saturation polarization J | 2011-08-04 |
20110186770 | EXPANDABLE POLYSILOXANES - The present invention provides a crosslinkable and expandable elastomeric material based on and/or containing siloxane polymer, the process for manufacturing of such material and the use of such material and its blends and composites. | 2011-08-04 |
20110186771 | Composite Material - A composite materil comprises magnetic particles dispersed in electrically insulating material. The magnetic particles have an aspect ratio greater than 1 (preferably greater than 10) and a concentration sufficiently high to produce negative permeability. The magnetic particles may be magnetic flakes of reduced carbonyl iron of average diameter 50 μm, average thickness 1 μm and aspect ratio 50, the magnetic flakes being at least 25% by volume of the composite material. The magnetic flakes may be aligned to produce enhanced permeability. The electrically insulating material may be paraffin wax, particulate PTFE, or another polymer. To control permittivity, the composite material may include an electrically conducting component such as graphite or conductive coatings upon the magnetic flakes. | 2011-08-04 |
20110186772 | HEAT TRANSFER FLUID - The present invention relates to compositions which are based on tetrafluoropropene and more particularly relates to compositions comprising 60% to 90% by weight of 2,3,3,3-tetrafluoropropene and 10% to 40% by weight of at least one compound selected from difluoroethane and difluoromethane, which can be used as a heat transfer fluid. | 2011-08-04 |
20110186773 | TRITHIOCARBONATE DERIVATIVES AND THE USE THEREOF IN THE FORM OF TRANSFER AGENTS FOR ACRYLIC ACID CONTROLLED RADICAL POLYMERISATION - The invention relates to novel sulphur compounds, to the production thereof by a method carried out in an aqueous medium and the use thereof in the form of transfer agents in a method for controlled radical polymerisation of acrylic acid and/or acrylic acid with water-soluble monomers in water. The thus obtained polymers are usable in the form of dispersing agents or grinding aid agents and/or aid agents for combined grinding of mineral materials in an aqueous suspension and in the form of dispersing agents directly incorporated into aqueous formulations containing mineral materials. | 2011-08-04 |
20110186774 | PROCESSES FOR PREPARING SULPHUR COMPOSITES AND ORGANOSILANE COUPLING AGENTS - A process for preparing sulphur composites is disclosed. Molten sulphur is combined with filler and/or aggregate, with a compound of formula (I) wherein R | 2011-08-04 |
20110186775 | CARBON NANOTUBE-INFUSED FIBER MATERIALS CONTAINING PARALLEL-ALIGNED CARBON NANOTUBES, METHODS FOR PRODUCTION THEREOF, AND COMPOSITE MATERIALS DERIVED THEREFROM - Carbon nanotube-infused fiber materials containing substantially parallel-aligned, infused carbon nanotubes are described herein. The carbon nanotube-infused fiber materials contain a fiber material and a layer of carbon nanotubes infused to the fiber material, where the infused carbon nanotubes are aligned substantially parallel to the longitudinal axis of the fiber material and at least a portion of the substantially parallel-aligned, infused carbon nanotubes are crosslinked to each other, to the fiber material, or both. Crosslinking can occur through covalent bonding or pi-stacking interactions, for example. The carbon nanotube-infused fiber materials can further contain additional carbon nanotubes that are grown on the layer of substantially parallel-aligned, infused carbon nanotubes. Composite materials containing the carbon nanotube-infused fiber materials and methods for production of the carbon nanotube-infused fiber materials are also described herein. | 2011-08-04 |
20110186776 | LIQUID CRYSTAL COMPOSITION CONTAINING POLYMERIZABLE COMPOUND AND LIQUID CRYSTAL DISPLAY ELEMENT USING THE SAME - Provided are a liquid crystal composition containing, as a first component, a polymerizable compound represented by general formula (I): | 2011-08-04 |
20110186777 | POLYMERIZABLE CHIRAL COMPOUND, POLYMERIZABLE LIQUID CRYSTAL COMPOSITION, LIQUID CRYSTAL POLYMER AND OPTICALLY ANISOTROPIC BODY - The present inventions to provide a novel polymerizable chiral compound (chiral agent) having high helical twisting power, a polymerizable liquid crystal composition comprising the polymerizable chiral compound and a polymerizable liquid crystal compound, a liquid crystal polymer, and an optically anisotropic body. The object was achieved by a polymerizable chiral compound represented by the following formula (I), a polymerizable liquid crystal composition comprising the polymerizable chiral compound and a polymerizable liquid crystal compound, a liquid crystal polymer, and an optically anisotropic body: | 2011-08-04 |
20110186778 | Temperature-Stable Oxynitride Phosphor and Light Source Comprising a Corresponding Phosphor Material - A thermally stable phosphor made of the M-Si—O—N system, having a cation M and an activator D, M being represented by Ba or Sr alone or as a mixture and optionally also being combined with at least one other element from the group Ca, Mg, Zn, Cu. The phosphor is activated with Eu or Ce or Tb alone or as a mixture, optionally in codoping with Mn or Yb. The activator D partially replaces the cation M. The phosphor is produced from the charge stoichiometry MO—SiO | 2011-08-04 |
20110186779 | PHOTOVOLTAIC MODULE RECYCLING - A method for reclaiming a semiconductor material from a glass substrate is disclosed, the method comprises the steps of providing at least one glass substrate having the semiconductor material disposed thereon, reducing the glass substrate having a semiconductor material disposed thereon to a plurality of glass particles having the semiconductor material disposed thereon by introducing a source of energy thereto, separating the semiconductor material from the plurality of glass particles to obtain semiconductor particles, and pyrometallυrgicaHy refining the semiconductor particles and the fine glass particles. | 2011-08-04 |
20110186780 | Transition Metal Ion Doped Semiconductor Nanocrystals and a Process for the Preparation Thereof - The present invention deals with transition metal ions doped semiconductor nanocrystals that are free from heavy metals like cadmium and therefore environment friendly and useful for biological applications. The present invention also describes a process for the preparation of such transition metal ion doped semiconductor nanocrystals, where the reactions take place at a temperature less than 3000 C. The said doped nanocrystals are stable in air and under UV radiation in both solution and precipitated solid form. | 2011-08-04 |
20110186781 | COATING COMPOSITION - A coloured coating composition comprising a white base paint and at least one coloured pigment in a form that can be readily mixed with the white base paint, the white base paint comprising a film-forming polymer, a liquid carrier, one or more opacifying white pigments and one or more extenders, the coloured coating composition having a light reflectance value Y less than 110, and greater than that defined by the equation Y=mC+K, where 25>C>1.0, C being the chroma of the coloured coating composition, m and K being empirical coefficients selected according to the type and number of the type of the at least one coloured pigment, and dependant on the hue angle of the coating composition. | 2011-08-04 |
20110186782 | LOADING QUANTUM DOTS INTO THERMO-RESPONSIVE MICROGELS BY REVERSIBLE TRANSFER FROM ORGANIC SOLVENTS TO WATER - Method for the preparation of inorganic-NP-composite microgels is based on the reversible transfer of microgels between water and an organic solvent such as tetrahydrofuran (THF). The method is used to produce semiconductor nanocrystals, often referred to as quantum dots (QDs) which are well known for their unique optical, electrical, magnetic and catalytic properties, as the inorganic NPs, recognizing that the best quality QDs are synthesized by a high temperature process in organic media, and have their surface covered with hydrophobic ligands (such as trioctylphosphine oxide, TOPO) that render the NPs insoluble in an aqueous solution. | 2011-08-04 |
20110186783 | Method and Apparatus for Reducing CO2 in a Stream by Conversion to a Syngas for Production of Energy - A system and method for producing Syngas from the CO | 2011-08-04 |
20110186784 | Emulsions of Ionic Liquids - The present teachings provide emulsions using ionic liquids for separation of biomolecules and related methods, compositions, and devices. | 2011-08-04 |
20110186785 | Nanocarbon material dispersion, method for producing the same, and nanocarbon material structure - There is provided a method for producing a nanocarbon material dispersion in which individual nanocarbon materials are separated from each other by mild processing. The method for producing a nanocarbon material dispersion of the present invention is characterized by including a step of preparing a composition by mixing a nanocarbon material with a dispersion medium comprising an amphiphilic triphenylene derivative, and a step of subjecting the composition to a mechanical dispersing processing. | 2011-08-04 |
20110186786 | Graphene Compositions - Compositions comprising graphene sheets and at least one charged organic compound. | 2011-08-04 |
20110186787 | Electrically Conductive Polymeric Compositions, Contacts, Assemblies and Methods - Electrically conductive polymeric compositions adapted for use in forming electronic devices are disclosed. The compositions are thermally curable at temperatures less than about 250° C. Compositions are provided which may be solvent-free and so can be used in processing or manufacturing operations without solvent recovery concerns. The compositions utilize (i) fatty acid modified epoxy acrylate and/or methacrylate monomer(s) and/or oligomer(s), (ii) fatty acid modified polyester acrylate and/or methacrylate monomer(s) and/or oligomer(s), or combinations of (i) and (ii). Also described are electronic assemblies such as solar cells using the various compositions and related methods. | 2011-08-04 |
20110186788 | Radiation Converter Material, Radiation Converter, Radiation Detector, Use of a Radiation Converter Material and Method for Producing a Radiation Converter Material - A radiation converter material includes a semiconductor material used for directly converting radiation quanta into electrical charge carriers. In at least one embodiment, the semiconductor material includes a dopant in a dopant concentration and defect sites produced in a process-dictated manner in such a way that the semiconductor material includes an ohmic resistivity in a range of between 5·10 | 2011-08-04 |
20110186789 | SYNTHESIS OF GRAPHENE SHEETS AND NANOPARTICLE COMPOSITES COMPRISING SAME - A method for producing isolatable and dispersible graphene sheets, wherein the graphene sheets may be tailored to be soluble in aqueous, non-aqueous or semi-aqueous solutions. The water soluble graphene sheets may be used to produce a metal nanoparticle-graphene composite having a specific surface area that is 20 times greater than aggregated graphene sheets. Graphene sheets that are soluble in organic solvents may be used to make graphene-polymer composites. | 2011-08-04 |
20110186790 | FLUORINATED HYBRID COMPOSITIONS - Described are compositions comprising a fluorine containing or fluorine and silicon containing polymer, with a reactive diluent, and optionally non-reactive oligomeric additives, crosslinkers, or inorganic particles, which upon curing provides coatings with a good balance of adhesion, mechanical properties, scratch resistance, low surface energy, repellency, and transparency. The compositions are useful as a topcoat, particularly in optical applications. | 2011-08-04 |
20110186791 | ULTRAVIOLET ABSORBENT COMPOSITION - An ultraviolet absorbent composition, containing at least one kind of specific ultraviolet absorbent as exemplified below, and at least one kind of specific compound as exemplified below. | 2011-08-04 |
20110186792 | SILICONE RESIN COMPOSITION - The present invention relates to a silicone resin composition including a silicone resin and metal oxide fine particles dispersed therein, the silicone resin being obtained by reacting a siloxane derivative having at least one selected from the group consisting of an alkoxysilyl group and a silanol group at a molecular end thereof and having a weight-average molecular weight (Mw) as determined by a gel permeation method of 300 to 6,000, with silica fine particles having silanol groups on a surface thereof. | 2011-08-04 |
20110186793 | Handicap wheel chair lifter - A wheel chair lifting structure to safely accommodate a plurality of wheel chairs sizes and their occupants that includes securing, lifting and lowering devices. | 2011-08-04 |
20110186794 | Wire Installation Tool - A wire installation tool having a handle with a first opening for receiving a wire attached to a tube having a second opening for evacuating the wire. In one embodiment, the handle has a lip with external radius larger than that of the tube allowing the tube to be inserted in the drill hole of a structure with the handle engaging the structure. This configuration allows a technician to easily feed cabling through the drill hole in the inner wall of an existing structure. The tool is particularly useful for safely feeding wiring through a drill created through the first and second wallboards of an inside wall. | 2011-08-04 |
20110186795 | Highway Guardrail Post - A highway guardrail post comprises an elongated one-piece roll-formed metal body including a front wall defining an attachment face, a pair of opposing side walls orthogonal to the front wall, a first pair of inverted corners respectively connecting the pair of side walls to the front wall, and a second pair of inverted corners respectively extending from the pair of side walls and terminating in a pair of spaced rear edges to define a rear access opening opposite the front wall. The guardrail posts may be manufactured by roll-forming a metal sheet or coil and cutting the roll-formed metal sheet or coil into lengths. | 2011-08-04 |
20110186796 | FENCING SYSTEM AND POST INSERT FOR USE THEREWITH - A fencing system typically includes hollow posts with rail structures extending therebetween. A post mount assembly is configured to mount on a foundation and is slidably received within each hollow post to provide suitable support for the posts. In one embodiment, each post mount assembly includes a wedge which is wedged against the post mount assembly typically to force the post mount assembly against an inner surface of the post. The post mount assembly may include a post mount and a post insert which is vertically adjustable relative to the post mount and against which the wedge is wedged. | 2011-08-04 |
20110186797 | MEMORY CELL THAT INCLUDES A SIDEWALL COLLAR FOR PILLAR ISOLATION AND METHODS OF FORMING THE SAME - In a first embodiment, a method of forming a memory cell is provided that includes (a) forming one or more layers of steering element material above a substrate; (b) etching a portion of the steering element material to form a pillar of steering element material having an exposed sidewall; (c) forming a sidewall collar along the exposed sidewall of the pillar; and (d) forming a memory cell using the pillar. Numerous other aspects are provided. | 2011-08-04 |
20110186798 | Phase Changeable Memory Devices and Methods of Forming the Same - Phase changeable memory devices are provided including a mold insulating layer on a substrate, the mold insulating layer defining an opening therein. A phase-change material layer is provided in the opening. The phase-change material includes an upper surface that is below a surface of the mold insulating layer. A first electrode is provided in the opening and on the phase-change material layer. A spacer is provided between a sidewall of the mold insulating layer and the phase-change material layer and the first electrode. The upper surface of the first electrode is coplanar with the surface of the mold insulating layer. Related methods are also provided. | 2011-08-04 |
20110186799 | NON-VOLATILE MEMORY CELL CONTAINING NANODOTS AND METHOD OF MAKING THEREOF - A non-volatile memory cell includes a first electrode, a steering element, a storage element located in series with the steering element, a plurality of discrete conductive nano-features separated from each other by an insulating matrix, where the plurality of discrete nano-features are located in direct contact with the storage element, and a second electrode. An alternative non-volatile memory cell includes a first electrode, a steering element, a storage element located in series with the steering element, a plurality of discrete insulating nano-features separated from each other by a conductive matrix, where the plurality of discrete insulating nano-features are located in direct contact with the storage element, and a second electrode. | 2011-08-04 |
20110186800 | PORE PHASE CHANGE MATERIAL CELL FABRICATED FROM RECESSED PILLAR - A method of manufacturing an electrode is provided that includes providing a pillar of a first phase change material atop a conductive structure of a dielectric layer; or the inverted structure; forming an insulating material atop dielectric layer and adjacent the pillar, wherein an upper surface of the first insulating material is coplanar with an upper surface of the pillar; recessing the upper surface of the pillar below the upper surface of the insulating material to provide a recessed cavity; and forming a second phase change material atop the recessed cavity and the upper surface of the insulating material, wherein the second phase change material has a greater phase resistivity than the first phase change material. | 2011-08-04 |
20110186801 | Nanoscale Switching Device - A nanoscale switching device has an active region containing a switching material capable of carrying a species of dopants and transporting the dopants under an electrical held. The switching device has first, second and third electrodes with nanoscale widths. The active region is disposed between the first and second electrodes. A resistance modifier layer, which has a non-linear voltage-dependent resistance, is disposed between the second and third electrodes. | 2011-08-04 |
20110186802 | MEMORY DEVICE AND A SEMICONDUCTOR DEVICE - The present invention provides a memory device and a semiconductor device which have high reliability for writing at low cost. Furthermore, the present invention provides a memory device and a semiconductor device having a non-volatile memory element in which data can be additionally written and which can prevent forgery due to rewriting and the like. The memory element includes a first conductive layer, a second conductive layer, and an organic compound layer, which is formed between the first conductive layer and the second conductive layer, and which has a photosensitized oxidation reduction agent which can be an excited state by recombination energy of electrons and holes and a substance which can react with the photosensitized oxidation reduction agent. | 2011-08-04 |
20110186803 | Multi-resistive state memory device with conductive oxide electrodes - A memory cell including conductive oxide electrodes is disclosed. The memory cell includes a memory element operative to store data as a plurality of resistive states. The memory element includes a layer of a conductive metal oxide (CMO) (e.g., a perovskite) in contact with an electrode that may comprise one or more layers of material. At least one of those layers of material can be a conductive oxide (e.g., a perovskite such as LaSrCoO | 2011-08-04 |
20110186804 | NANOSCALE CHEMICAL TEMPLATING WITH OXYGEN REACTIVE MATERIALS - A method of fabricating templated semiconductor nanowires on a surface of a semiconductor substrate for use in semiconductor device applications is provided. The method includes controlling the spatial placement of the semiconductor nanowires by using an oxygen reactive seed material. The present invention also provides semiconductor structures including semiconductor nanowires. In yet another embodiment, patterning of a compound semiconductor substrate or other like substrate which is capable of forming a compound semiconductor alloy with an oxygen reactive element during a subsequent annealing step is provided. This embodiment provides a patterned substrate that can be used in various applications including, for example, in semiconductor device manufacturing, optoelectronic device manufacturing and solar cell device manufacturing. | 2011-08-04 |
20110186805 | Doped graphene electronic materials - A graphene substrate is doped with one or more functional groups to form an electronic device. | 2011-08-04 |
20110186806 | Doped graphene electronic materials - A graphene substrate is doped with one or more functional groups to form an electronic device. | 2011-08-04 |
20110186807 | Doped graphene electronic materials - A graphene substrate is doped with one or more functional groups to form an electronic device. | 2011-08-04 |
20110186808 | METHODS OF FORMING CATALYTIC NANOPADS - Carbon nanotube (CNT)-based devices and technology for their fabrication are disclosed. The planar, multiple layer deposition technique and simple methods of change of the nanotube conductivity type during the device processing are utilized to provide a simple and cost effective technology for large scale circuit integration. Such devices as p-n diode, CMOS-like circuit, bipolar transistor, light emitting diode and laser are disclosed, all of them are expected to have superior performance then their semiconductor-based counterparts due to excellent CNT electrical and optical properties. When fabricated on semiconductor wafers, the CNT-based devices can be combined with the conventional semiconductor circuit elements, thus producing hybrid devices and circuits. | 2011-08-04 |
20110186809 | NANOTUBE ARRAY LIGHT EMITTING DIODES AND LASERS - Carbon nanotube (CNT)-based devices and technology for their fabrication are disclosed. The planar, multiple layer deposition technique and simple methods of change of the nanotube conductivity type during the device processing are utilized to provide a simple and cost effective technology for large scale circuit integration. Such devices as p-n diode, CMOS-like circuit, bipolar transistor, light emitting diode and laser are disclosed, all of them are expected to have superior performance then their semiconductor-based counterparts due to excellent CNT electrical and optical properties. When fabricated on semiconductor wafers, the CNT-based devices can be combined with the conventional semiconductor circuit elements, thus producing hybrid devices and circuits. | 2011-08-04 |
20110186810 | OPTOELECTRONIC COMPONENT WITH THREE-DIMENSION QUANTUM WELL STRUCTURE AND METHOD FOR PRODUCING THE SAME - An optoelectronic component with three-dimension quantum well structure and a method for producing the same are provided, wherein the optoelectronic component comprises a substrate, a first semiconductor layer, a transition layer, and a quantum well structure. The first semiconductor layer is disposed on the substrate. The transition layer is grown on the first semiconductor layer, contains a first nitride compound semiconductor material, and has at least a texture, wherein the texture has at least a first protrusion with at least an inclined facet, at least a first trench with at least an inclined facet and at least a shoulder facet connected between the inclined facets. The quantum well structure is grown on the texture and shaped by the protrusion, the trench and the shoulder facet. | 2011-08-04 |
20110186811 | OPTICAL COMPONENTS, SYSTEMS INCLUDING AN OPTICAL COMPONENT, AND DEVICES - A lighting system including a light source capable of generating light, and an optical component optically coupled to receive at least a portion of the light generated by the light source and convert at least a portion of the light so received to a predetermined wavelength such that the light emitted by the lighting system includes light emission from the light source supplemented with light emission at the predetermined wavelength, wherein the optical component including an optical material comprises quantum confined semiconductor nanoparticles. Also disclosed is an optical component comprising a light guide plate and an optical material disposed over at least a portion of a surface of the light guide plate, the optical material comprising quantum confined semiconductor nanoparticles capable of emitting light in a predetermined spectral region. Devices are also disclosed. | 2011-08-04 |
20110186812 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a semiconductor light emitting device and a method of manufacturing the same. The semiconductor light emitting layer comprises a first conductive type semiconductor layer, an active layer on the first conductive type semiconductor layer, and a second conductive type semiconductor layer on the active layer. The active layer comprises a quantum well layer, a quantum barrier layer, and a dual barrier layer. | 2011-08-04 |
20110186813 | Light Emitting Device - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, and a passivation layer protecting a surface of the light emitting structure. The passivation layer includes a first passivation layer on a top surface of the light emitting structure and a second passivation layer having a refractive index different from that of the first passivation layer, the second passivation layer being disposed on a side surface of the light emitting structure. The second passivation layer has a refractive index greater than that of the first passivation layer. | 2011-08-04 |
20110186814 | Light Emitting Device, Light Emitting Device Package - Provided are a light emitting device, a light emitting device package, and a lighting system. The light emitting device includes a light emitting structure including a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer and a light extraction pattern in which a period (a) exceeds λ/n (where, λ is a wavelength of light emitted from the active layer, and n is a refractive index of the light emitting structure) on the light emitting structure. The period (a) may be in the range of 5×(λ/n) (a (15×(λ/n). An etching depth (h) of the light extraction pattern may be equal to or greater than λ/n. | 2011-08-04 |
20110186815 | NITRIDE SEMICONDUCTOR DEVICE - There is provided a nitride semiconductor device including: an n-type nitride semiconductor layer; a p-type nitride semiconductor layer; and an active layer formed between the n-type and p-type nitride semiconductor layers, the active layer including a plurality of quantum well layers and at least one quantum barrier layer deposited alternately with each other, wherein the active layer includes a first quantum well layer, a second quantum well layer formed adjacent to the first quantum well layer toward the p-type nitride semiconductor layer and having a quantum level higher than a quantum level of the first quantum well layer, and a tunneling quantum barrier layer formed between the first and second quantum well layers and having a thickness enabling a carrier to be tunneled therethrough. | 2011-08-04 |
20110186816 | SEMICONDUCTOR DEVICE WAFER, SEMICONDUCTOR DEVICE, DESIGN SYSTEM, MANUFACTURING METHOD AND DESIGN METHOD - A device forming thin film for forming a semiconductor device; an inhibition portion that surrounds the device forming thin film and inhibits growth of a precursor of the device forming thin film into a crystal; a sacrificial growth portion that is formed by causing the precursor to sacrificially grow into a crystal, and is positioned around the device forming thin film separated by the inhibition portion; and a protection film that covers a top portion of the sacrificial growth portion and exposes a top portion of the device forming thin film are included. The protection film may be made of polyimide. | 2011-08-04 |
20110186817 | Doped graphene electronic materials - A graphene substrate is doped with one or more functional groups to form an electronic device. | 2011-08-04 |
20110186818 | Doped graphene electronic materials - A graphene substrate is doped with one or more functional groups to form an electronic device. | 2011-08-04 |
20110186819 | ORGANIC ELECTROLUMINESCENCE DISPLAY APPARATUS AND MANUFACTURING METHOD THEREFOR - Provided is a manufacturing method for an organic electroluminescence display apparatus in which processing uniformity is kept during partial removal processing of an electrode layer or an organic compound layer. The organic electroluminescence display apparatus includes: a substrate; and a light-emitting device including an organic compound layer including an emission layer sandwiched between electrodes formed on the substrate, in which: two or more of the light-emitting devices are provided, and the light-emitting devices are stacked in a direction perpendicular to the substrate; at least one of the electrodes and the organic compound layers in the two or more light-emitting devices includes openings; and the openings are positioned so as not to overlap with one another in the direction perpendicular to the substrate. | 2011-08-04 |
20110186820 | THIN FILM DEPOSITION APPARATUS, METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE APPARATUS, AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE MANUFACTURED BY USING THE METHOD - A thin film deposition apparatus, a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus, and an organic light-emitting display device manufactured using the method. In the thin film deposition apparatus for forming a thin film on a substrate, the apparatus includes a deposition source that discharges a deposition material; a deposition source nozzle unit disposed at a side of the deposition source and including a plurality of deposition source nozzles arranged in a first direction; a patterning slit sheet disposed opposite to the deposition source nozzle unit and including a common deposition region at an end of the patterning slit sheet and a plurality of patterning slits on the other end in a second direction perpendicular to the first direction, where each of the plurality of pattering slits includes a plurality of patterning sub slits that are different in length; and a barrier plate assembly disposed between the deposition source nozzle unit and the patterning slit sheet in the first direction, and including a plurality of barrier plates that partition a deposition space between the deposition source nozzle unit and the patterning slit sheet into a plurality of sub-deposition spaces. The thin film deposition apparatus is separated from the substrate by a predetermined distance. The thin film deposition apparatus and the substrate are movable relative to each other. | 2011-08-04 |
20110186821 | AZAPYRENES FOR ELECTRONIC APPLICATIONS - The present invention relates to electronic devices, especially electroluminescent devices, comprising azapyrenes of formula (I), or formula (III), wherein Y | 2011-08-04 |
20110186822 | ORGANIC EL DEVICE AND PROCESS FOR MANUFACTURING SAME - Provided is an organic EL device capable of maintaining an excellent luminous efficiency over an extended period of time, particularly in a top emission-type EL device. The organic EL device of the invention includes a substrate and an organic EL element formed on the substrate. The organic EL element is composed of a bottom electrode, an organic EL layer, a top electrode and a protective layer. The protective layer is composed of one or a plurality of inorganic films, and at least one of the one or plurality of inorganic films is an SiON:H film having stretching-mode peak area ratios, as determined by infrared absorption spectroscopy, that include an absorption area ratio of N—H bonds to Si—N bonds in the SiON:H film which is not less than 0.04 but not more than 0.07 and an absorption area ratio of Si—H bonds to Si—N bonds which is not more than 0.15. | 2011-08-04 |
20110186823 | System for Displaying Images - A system for displaying images is provided. The system includes a full-color organic electroluminescent device having an anode. A first emitting layer and a second emitting layer are sequentially disposed on the anode. A cathode is disposed on the second emitting layer. The first and second emitting layers include, respectively, a first dopant and a second dopant, wherein the energy gap of the first dopant is different from that of the second dopant. | 2011-08-04 |
20110186824 | THIN-FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC DEVICE - A thin-film transistor includes: an organic semiconductor layer; and a source electrode and a drain electrode spaced apart from each other and disposed to respectively overlap the organic semiconductor layer. The organic semiconductor layer INCLUDES: a lower organic semiconductor layer; and an upper organic semiconductor layer formed on the lower organic semiconductor layer and having solubility and conductivity higher than the lower organic semiconductor layer. The lower organic semiconductor layer extends from an area overlapping the source electrode to an area overlapping the drain electrode, while the upper organic semiconductor layer is disposed in each of the area overlapping the source electrode and the area overlapping the drain electrode so that the respective upper organic semiconductor layers are spaced apart from each other. | 2011-08-04 |
20110186825 | Quinoxaline Derivative, and Light-Emitting Element, Light-Emitting Device, and Electronic Appliance Using the Same - A quinoxaline derivative expressed by the general formula (1) is provided. (Each of R | 2011-08-04 |
20110186826 | Electroluminescent Materials and Optical Device - An electroluminescent material comprises the following structural unit: | 2011-08-04 |
20110186827 | Organic Light-emitting Materials and Devices - A light-emissive polymer comprising the following unit: | 2011-08-04 |
20110186828 | Blue light-Emitting Material - A light-emitting material comprising a conjugated polymer and a blue-light emitting perylene. | 2011-08-04 |
20110186829 | Surface Treated Substrates for Top Gate Organic Thin Film Transistors - A method of forming a top gate transistor comprising the steps of providing a substrate carrying source and drain electrodes defining a channel region therebetween; treating at least part of the surface of the channel region to reduce its polarity; and depositing a semiconductor layer in the channel. | 2011-08-04 |
20110186830 | Method of Making Organic Thin Film Transistors Using a Laser Induced Thermal Transfer Printing Process - The present invention provides a method of manufacturing an organic thin film transistor (TFT), comprising: providing a substrate layer; providing a gate electrode layer; providing a dielectric material layer; providing an organic semiconductor (OSC) material layer; providing a source and drain electrode layer; and wherein one or more of the layers is deposited using a laser induced thermal imaging (LITI) process. Preferably the organic TFT is a bottom gate device and the source and drain electrodes are deposited on an organic semiconductor layer, or over a dielectric material layer using LITI. Further preferably a dopant material may be provided between the OSC material and the source and drain electrode layer, wherein the dopant material may also be deposited using LITI. Also preferably, wherein the dopant may be a charge neutral dopant such as substituted TCNQ or F4TCNQ. | 2011-08-04 |
20110186831 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE ELEMENT USING SAME - An aromatic amine derivative represented by the following formula (1): | 2011-08-04 |
20110186832 | Opto-electrical Devices and Methods of Manufacturing the Same - An improved composition for ink jet printing an opto-electrical device, which composition comprises a solution-processable host material and a metal complex, wherein the viscosity of the composition exceeds 12 mPa·s at 20° C. | 2011-08-04 |
20110186833 | ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR PRODUCING THE SAME - The problem to be solved by the present invention is to prolong the luminance half life of an organic EL element. A means for solving the problem is a method for producing an organic electroluminescent element comprising a first electrode that is formed first, a second electrode that is formed later, and a light-emitting layer that is formed between the first electrode and the second electrode, the method comprising the steps of applying a solution containing a light-emitting organic material to a surface of a layer located below to form an applied film; calcining the applied film in an inert gas atmosphere or in a vacuum atmosphere to form a light-emitting layer; holding the surrounding of the formed light-emitting layer in an inert gas atmosphere or in a vacuum atmosphere; and forming a layer located on the light-emitting layer in an inert gas atmosphere or in a vacuum atmosphere. | 2011-08-04 |
20110186834 | NOVEL 1,3,5-TRIS(DIARYLAMINO)BENZENE AND USE THEREOF - The invention provides a 1,3,5-tris(diarylamino)benzene represented by the general formula (I) | 2011-08-04 |
20110186835 | ELECTRONIC DEVICES MADE WITH METAL SCHIFF BASE COMPLEXES - The present invention relates to new electronic devices including a layer comprising a photoactive material and metal Schiff base complex, wherein the metal Schiff base complex is present as a host for the photoactive material or in a layer between the cathode and the photoactive material containing layer, or both. | 2011-08-04 |
20110186836 | GREEN LUMINESCENT MATERIALS - There is provided a green luminescent material having Formula I or Formula II | 2011-08-04 |
20110186837 | SEMICONDUCTOR MEMORY DEVICE - It is to provide a semiconductor memory device in which high voltage is not needed in writing, a defect is less likely to occur, the writing time is short, and data cannot be rewritten without an increase in cost. The semiconductor memory device includes a memory element which includes a diode-connected first transistor, a second transistor whose gate is connected to one terminal of a source electrode and a drain electrode of the diode-connected first transistor, and a capacitor connected to the one terminal of the source electrode and the drain electrode of the diode-connected first transistor and the gate of the second transistor. | 2011-08-04 |
20110186838 | CIRCUIT ARCHITECTURE FOR THE PARALLEL SUPPLYING DURING AN ELECTRIC OR ELECTROMAGNETIC TESTING OF A PLURALITY OF ELECTRONIC DEVICES INTEGRATED ON A SEMICONDUCTOR WAFER - A circuit architecture provides for the parallel supplying of power during electric or electromagnetic testing of electronic devices integrated on a same semiconductor wafer and bounded by scribe lines. The circuit architecture comprises a conductive grid interconnecting the electronic devices and having a portion external to the devices and a portion internal to the devices. The external portion extends along the scribe lines; and the internal portion extends within at least a part of the devices. The circuit architecture includes interconnection pads between the external portion and the internal portion of the conductive grid and provided on at least a part of the devices, the interconnection pads forming, along with the internal and external portions, power supply lines which are common to different electronic devices of the group. | 2011-08-04 |
20110186839 | Method and System for Hermetically Sealing Packages for Optics - A system for hermetically sealing devices includes a substrate, which includes a plurality of individual chips. Each of the chips includes a plurality of devices and each of the chips are arranged in a spatial manner as a first array. The system also includes a transparent member of a predetermined thickness, which includes a plurality of recessed regions arranged in a spatial manner as a second array and each of the recessed regions are bordered by a standoff region. The substrate and the transparent member are aligned in a manner to couple each of the plurality of recessed regions to a respective one of said plurality of chips. Each of the chips within one of the respective recessed regions is hermetically sealed by contacting the standoff region of the transparent member to the plurality of first street regions and second street regions using at least a bonding process to isolate each of the chips within one of the recessed regions. | 2011-08-04 |
20110186840 | DIAMOND SOI WITH THIN SILICON NITRIDE LAYER - A method and structure for a semiconductor device including a thin nitride layer formed between a diamond SOI layer and device silicon layer to block diffusion of ions and improve lifetime of the device silicon. | 2011-08-04 |
20110186841 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF - A semiconductor device ( | 2011-08-04 |
20110186842 | Thin film transistor and method of manufacturing the same - A method of manufacturing a thin film transistor and a thin film transistor, the method including sequentially forming a gate insulating layer, an amorphous silicon layer and an insulating layer on an entire top surface of a substrate having a gate electrode; patterning the insulating layer to form an etch stopper; and patterning the amorphous silicon layer to form a semiconductor layer. | 2011-08-04 |
20110186843 | Manufacturing method of thin film and metal line for display using the same, thin film transistor array panel, and method for manufacturing the same - A method for forming a thin film according to an exemplary embodiment of the present invention includes forming the thin film at a power density in the range of approximately 1.5 to approximately 3 W/cm | 2011-08-04 |
20110186844 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A display substrate includes a substrate, a pixel electrode and a dummy pattern part. The substrate includes a display area and a peripheral area surrounding the display area. The pixel electrode is disposed in the display area and electrically connected to gate and data lines. The dummy pattern part is disposed in the peripheral area and includes a plurality of first dummy electrodes connected to each other in a network form through connection electrodes and a plurality of second dummy electrodes respectively disposed over the first dummy electrodes. | 2011-08-04 |
20110186845 | CRYSTALLIZATION METHOD OF AMORPHOUS SEMICONDUCTOR FILM, THIN FILM TRANSISTOR, AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - Provided is a thin film transistor that includes a gate electrode formed in one major plane of a substrate, a gate insulating film covering the gate electrode, a semiconductor film formed opposite to the gate electrode with the gate insulating film interposed and including a first amorphous region to serve as a source region, a second amorphous region to serve as a drain region, and a crystalline region to serve as a channel region disposed between the first amorphous region and the second amorphous region, and a source electrode and a drain electrode formed above the semiconductor film without direct contact with the crystalline region and electrically connected to the source region and the drain region, respectively. | 2011-08-04 |
20110186846 | Organic Light Emitting Display Device - A transparent organic light emitting display device having improved transmittance comprises: a first substrate having a transmitting region and a plurality of pixel regions separated from each other by the transmitting region; thin film transistors positioned on a first surface of the first substrate and disposed in the pixel regions of the substrate; a passivation layer covering the thin film transistors; a plurality of pixel electrodes, formed on the passivation layer so as to be electrically connected to the thin film transistors, located in the pixel regions, and overlapping and covering the thin film transistors; an opposite electrode facing the pixel electrodes, formed to be able to transmit light, and located in the transmitting region and the pixel regions; an organic emission layer interposed between the pixel electrode and the opposite electrode to emit light; a second substrate facing the opposite electrode and bonded to the first substrate; and a conduction unit interposed between the second substrate and the opposite electrode, and having both ends contacting the second substrate and the opposite electrode. | 2011-08-04 |
20110186847 | ORGANIC LIGHT EMITTING DIODE DISPLAY AND FABRICATING METHOD OF THE SAME - An organic light emitting diode display and a fabricating method of the same are disclosed. In one embodiment, the display includes i) a substrate having a thin film transistor region and a pixel region, ii) a semiconductor layer formed in the thin film transistor region, iii) a gate insulating layer formed on the substrate and the semiconductor layer and vi) a lower electrode formed on the gate insulating layer, wherein the lower electrode is formed in the pixel region. The display further includes i) a gate electrode formed on the gate insulating layer, wherein the gate electrode is formed substantially directly above the semiconductor layer, ii) an interlayer insulating layer formed on the gate insulating layer, the lower electrode and the gate electrode and iii) source and drain electrodes formed on the interlayer insulating layer and electrically connected with the semiconductor layer. Each of the lower electrode and the gate electrode is formed of a first conductive layer and a second conductive layer formed on the first conductive layer. The second conductive layer and the source/drain electrodes are formed of the same material. | 2011-08-04 |
20110186848 | Semiconductor device and display device - A semiconductor device can easily reduce a leak current which flows when a reversely-staggered-type TFT element in which an active layer is made of polycrystalline semiconductor is turned off. The semiconductor device includes a reversely-staggered-type TFT element in which a semiconductor layer, a source electrode and a drain electrode are arranged on a surface of an insulation film, and a portion of the source electrode and a portion of the drain electrode respectively get over the semiconductor layer. The active layer of the semiconductor layer is mainly made of polycrystalline semiconductor constituted of strip-shaped crystals elongated in the channel length direction of the TFT element, and is configured in a plan view such that the source electrode and the drain electrode are respectively pulled out from positions above the active layer in the channel width direction of the TFT element and in the directions opposite to each other, and the source electrode intersects with only one side out of two sides of the active layer which extend in the channel length direction, and the drain electrode intersects with only another side out of two sides of the active layer which extend in the channel length direction. | 2011-08-04 |
20110186849 | TFT SUBSTRATE FOR DISPLAY DEVICE AND MANUFACTURING METHOD OF THE SAME - Disclosed is a TFT substrate for a display apparatus comprising a gate wiring including a gate electrode, a data wiring including a data line, a source electrode connected to the data line, and a drain electrode connected to a pixel electrode, and a semiconductor layer disposed between the gate wiring and the data wiring, wherein the semiconductor layer under the drain electrode is disposed within an area overlapping the gate electrode and the semiconductor layer under the source electrode extends outward to an area not overlapping the gate electrode. Advantageously, the present disclosure provides a TFT substrate for a display apparatus having a high aperture ratio and causing less afterimaging, and a manufacturing method of the same. | 2011-08-04 |
20110186850 | LIQUID CRYSTAL DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME, AND LIQUID CRYSTAL TELEVISION RECEIVER - At least one or more of a conductive layer which forms a wiring or an electrode and a pattern necessary for manufacturing a display panel such as a mask for forming a predetermined pattern is formed by a method capable of selectively forming a pattern to manufacture a liquid crystal display device. A droplet discharge method capable of forming a predetermined pattern by selectively discharging a droplet of a composition in accordance with a particular object is used as a method capable of selectively forming a pattern in forming a conductive layer, an insulating layer, or the like. | 2011-08-04 |
20110186851 | MULTILAYER SEMICONDUCTOR DEVICES WITH CHANNEL PATTERNS HAVING A GRADED GRAIN STRUCTURE - Memory devices include a stack of interleaved conductive patterns and insulating patterns disposed on a substrate. A semiconductor pattern passes through the stack of conductive patterns and insulating patterns to contact the substrate, the semiconductor pattern having a graded grain size distribution wherein a mean grain size in a first portion of the semiconductor pattern proximate the substrate is less than a mean grain size in a second portion of the semiconductor pattern further removed from the substrate. The graded grain size distribution may be achieved, for example, by partial laser annealing. | 2011-08-04 |
20110186852 | DISPLAY DEVICE AND DRIVING METHOD THEREOF - In the respect of an electrical characteristic of a transistor, a channel size W/L of a transistor is preferably designed small in order to decrease an effect of a variation in threshold voltage, while the channel size W/L is preferably designed large in order to widen a saturation region as an operation region of the transistor in the respect of characteristic of a light emitting element. Thus, decreasing an effect of a variation in threshold voltage and widening a saturation region in order not to reduce luminance due to a degradation of the light emitting element are in the relation of trade-off. According to the invention, a current capacity of a driving transistor is increased so as to operate in a wide saturation region. A lighting period control circuit is provided in each pixel for changing a lighting period of each pixel separately. Another configuration of the invention includes a plurality of transistors, for example a first driving transistor and a second driving transistor, and a lighting period control circuit for controlling a lighting period of the light emitting element in each pixel. | 2011-08-04 |
20110186853 | THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY UNIT - A thin film transistor is provided. The thin film transistor includes a gate electrode, a gate insulating film, and an oxide semiconductor film, wherein at least a portion of the gate electrode includes a metal oxide. An electric device and a display device that include the thin film transistor are also provided in addition to a manufacture method. | 2011-08-04 |
20110186854 | SINGLE-SHOT SEMICONDUCTOR PROCESSING SYSTEM AND METHOD HAVING VARIOUS IRRADIATION PATTERNS - High throughput systems and processes for recrystallizing thin film semiconductors that have been deposited at low temperatures on a substrate are provided. A thin film semiconductor workpiece ( | 2011-08-04 |
20110186855 | Enhancement-Mode GaN MOSFET with Low Leakage Current and Improved Reliability - An enhancement-mode GaN MOSFET with a low leakage current and an improved reliability is formed by utilizing a SiO | 2011-08-04 |
20110186856 | LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a light emitting element includes providing a substrate, forming a buffer layer on the substrate, forming a GaN layer on the buffer layer, forming a rough layer on the GaN layer at low temperature, and forming an epitaxial layer on the rough layer, wherein a refraction index of the epitaxial layer exceeds a refraction index of the rough layer. Thus, most light scatters at the rough layer, and then emits upwardly to a light emitting surface, enhancing light extraction efficiency thereof. An epitaxial process of the method is processed in situ in an MOCVD reactor. | 2011-08-04 |
20110186857 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided is a light emitting device according to one embodiment including: a substrate which has protrusions on the C-face, and of which unit cells are constructed in a hexagonal structure; a semiconductor layer which is formed on the substrate, in which empty spaces are formed in sides of the protrusions, and of which unit cells are constructed in a hexagonal structure; and a light emitting structure layer comprising a first conductive semiconductor layer, a second conductive semiconductor layer, and an active layer formed between the first conductive semiconductor layer and second conductive semiconductor layer which are formed on the semiconductor layer, wherein the A-face of the substrate and the A-face of the semiconductor layer form an angle of greater than zero degree, and the protrusions include the R-faces. | 2011-08-04 |
20110186858 | Gallium Nitride Power Devices Using Island Topography - A semiconductor device in provided having a substrate and a semiconductor layer formed on a main surface of the substrate. A plurality of first island electrodes and a plurality of second island electrodes are placed over the semiconductor layer. The plurality of first island electrodes and second island electrodes are spaced apart from each other so as to be alternatively arranged to produce two-dimensional active regions in all feasible areas of the semiconductor layer. Each side of the first island electrodes is opposite a side of the second island electrodes. The semiconductor device can also include a plurality of strip electrodes that are formed in the regions between the first island electrodes and the second island electrodes. The strip electrodes serve as the gate electrodes of a multi-island transistor. The first island electrodes serve as the source electrodes of the multi-island transistor. The second island electrodes serve as the drain electrodes of the multi-island transistor. A plurality of connections to the gate electrodes are provided at each interstice defined by corners of the first island electrodes and the second island electrodes. | 2011-08-04 |
20110186859 | High speed high power nitride semiconductor device - A nitride semiconductor device has: a substrate; a semiconductor lamination formed on the substrate, and including a channel layer of nitride semiconductor; source and drain electrodes formed on the semiconductor lamination in ohmic contact with the channel layer; an insulating layer formed on the semiconductor lamination, and having an opening in a gate electrode contact area, a total thickness portion having a flat surface and a total thickness in an area spaced apart from the opening, and a transient portion with monotonically changing thickness between the opening and the total thickness portion, a sidewall of the insulating layer facing the opening rising steeply to a partial thickness of the total thickness; and a T-shaped gate electrode contacting the semiconductor lamination layer in the opening and extending on the insulating film to portions with increased thickness thicker than the partial thickness. | 2011-08-04 |
20110186860 | NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE, METHOD FOR MANUFACTURING NITRIDE-BASED SEMICONDUCTOR LIGHT EMITTING DEVICE, AND LIGHT EMITTING APPARATUS - Disclosed is a nitride-based semiconductor light emitting device with excellent light extraction efficiency. A light emitting device | 2011-08-04 |
20110186861 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device having a JFET or a MESFET mainly includes a semiconductor substrate, a first conductivity type semiconductor channel layer on the substrate, a first conductivity type semiconductor layer on the channel layer, and an i-type sidewall layer on a sidewall of a recess that penetrates the semiconductor layer to divide the semiconductor layer into a source region and a drain region. The semiconductor layer has an impurity concentration greater than an impurity concentration of the channel layer. The semiconductor device further includes a second conductivity type gate region that is located on the channel layer in the recess and on the i-type sidewall layer. The gate region is spaced from the source region and the drain region by the i-type sidewall layer. | 2011-08-04 |
20110186862 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device includes a substrate made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to 65° with respect to a surface orientation of {0001}, a p-type layer serving as a semiconductor layer, and an oxide film serving as an insulating film. The p-type layer is formed on the substrate and is made of silicon carbide. The oxide film is formed to contact with a surface of the p-type layer. A maximum value of the concentration of nitrogen atoms in a region within 10 nm of an interface between the semiconductor layer and the insulating film (interface between a channel region and the oxide film) is greater than or equal to 1×10 | 2011-08-04 |
20110186863 | Light Emitting Diode Having Improved Light Emission Efficiency and Method for Fabricating the Same - Provided is a light emitting diode (LED) having improved light emission efficiency, which can effectively overcome a technical limit of the related art by implementing a surface plasma resonance effect as well as reducing a layer defect such as threading dislocations in an LED structure. | 2011-08-04 |