| 31st week of 2012 patent applcation highlights part 41 |
| Patent application number | Title | Published |
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| 20120196332 | ENZYME METHOD OF EXTRACTING OILS AND PROTEINS FROM VEGETABLE MATTER IN AN AQUEOUS MEDIUM - Method for extracting oils, proteins and fermentable sugars from vegetable material in an aqueous medium, includes:
| 2012-08-02 |
| 20120196333 | SYNTHESIS OF STATINS - The process for the synthesis of statins featuring the use of an early intermediate (4R,6S)-6-(dialkoxymethyl)tetrahydro-2H-pyran-2,4-diol which already possesses the desired stereochemistry corresponding to the final statin. | 2012-08-02 |
| 20120196334 | LIGF-TYPE ENZYMES FOR BIOCONVERSION OF LIGNIN-DERIVED COMPOUNDS - The teachings provided herein are generally directed to a method of converting lignin-derived compounds to valuable aromatic chemicals using an enzymatic, bioconversion process. The teachings provide a selection of (i) host cells that are tolerant to the toxic compounds present in lignin fractions; (ii) polypeptides that can be used as enzymes in the bioconversion of the lignin fractions to the aromatic chemical products; (iii) polynucleotides that can be used to transform the host cells to express the selection of polypeptides as enzymes in the bioconversion of the lignin fractions; and (iv) the transformants that express the enzymes. | 2012-08-02 |
| 20120196335 | LIGF-TYPE TRANSFORMANTS FOR BIOCONVERSION OF LIGNIN-DERIVED COMPOUNDS - The teachings provided herein are generally directed to a method of converting lignin-derived compounds to valuable aromatic chemicals using an enzymatic, bioconversion process. The teachings provide a selection of (i) host cells that are tolerant to the toxic compounds present in lignin fractions; (ii) polypeptides that can be used as enzymes in the bioconversion of the lignin fractions to the aromatic chemical products; (iii) polynucleotides that can be used to transform the host cells to express the selection of polypeptides as enzymes in the bioconversion of the lignin fractions; and (iv) the transformants that express the enzymes. | 2012-08-02 |
| 20120196336 | RADIAL COUNTERFLOW REACTOR WITH APPLIED RADIANT ENERGY - An improvement is described for the processing of biological material in a continuous stream by the application of radiant energy taken from the wavelengths from infrared to ultraviolet, and its absorption by a feedstock in a workspace of featuring controlled turbulence created by one or more counter-rotating disk impellers. The absorbed energy and the controlled turbulence patterns create a continuous process of productive change in a feed into the reactor, with separated light and heavy product output streams flowing both inward and outward from the axis in radial counterflow. The basic mechanism of processing can be applied to a wide range of feedstocks, from the promotion of the growth of algae to make biofuel or other forms of aquaculture, to a use in the controlled combustion of organic material to make biochar. | 2012-08-02 |
| 20120196337 | HETEROGENOUS ENZYMATIC CATALYST, PREPARATION METHOD, AND USE - The invention relates to a heterogenous enzymatic catalyst that takes the form of a cellular monolith consisting of a silica or organically modified silica matrix, said monolith including macropores, mesopores, and micropores, said pores being interconnected, and wherein the inner surface of the macropores is functionalized by a coupling agent selected from among silanes, said inner surface moreover having an unpurified enzyme attached thereon by means of a covalent or electrostatic bond. The invention also relates to the method for preparing said catalyst, said method comprising: a first step for preparing a solid silica impression that takes the form of a cellular monolith such as defined above; a second step for functionalizing the inner surface of the macropores via a coupling agent, selected from among silanes, by vacuum-soaking the cellular monolith by dissolving the coupling agent in an organic solvent; and a third step for vacuum-soaking the thus-functionalized monolith by means of an aqueous solution or aqueous dispersion of at least one unpurified enzyme. Finally, the invention relates to the use of such catalyst to carry out catalyzed chemical reactions. | 2012-08-02 |
| 20120196338 | METHODS AND COMPOSITIONS FOR IMPROVING THE PRODUCTION OF PRODUCTS IN MICROORGANISMS - Methods and compositions are provided for improving the production of products, such as fuel products like ethanol, in microorganisms. In particular, methods and compositions are described for improving ethanol production utilizing genes identified in | 2012-08-02 |
| 20120196339 | PRODUCTION OF INDUSTRIALLY RELEVANT COMPOUNDS IN PROKARYOTIC ORGANISMS - Disclosed herein are methods for producing compounds (such as 3,4-dihydroxybenzoate, catechol, cis,cis-muconate, or β-carboxy-cis,cis-muconic acid) utilizing biosynthetic pathways in prokaryotic organisms expressing one or more heterologous genes. In some embodiments, the method includes expressing a heterologous asbF gene (for example, a gene having dehydroshikimate dehydratase activity) in a prokaryotic cell under conditions sufficient to produce the one or more compounds and purifying the compound. In additional embodiments, the method further includes expressing one or more of a heterologous 3,4-DHB decarboxylase gene, a heterologous catechol 1,2-dioxygenase gene, and a heterologous 3,4-DHB dioxygenase gene in the prokaryotic cell and purifying the compound. | 2012-08-02 |
| 20120196340 | Novel Sesquiterpene Synthase Gene and Protein - The invention relates to sesquiterpene synthases and methods for their production and use. Particularly, the invention provides nucleic acids comprising the nucleotide sequence of citrus valencene synthase (CVS) which codes for at least one CVS. The invention further provides nucleic acids comprising the nucleotide sequence coding for amino acid residues forming the tier 1 and tier 2 domains of CVS. The invention also provides for methods of making and using the nucleic acids and amino acids of the current invention. | 2012-08-02 |
| 20120196341 | FERMENTIVE PRODUCTION OF FOUR CARBON ALCOHOLS - Methods for the fermentive production of four carbon alcohols are provided. Specifically, butanol, preferably 2-butanol is produced by the fermentive growth of a recombinant bacteria expressing a 2-butanol biosynthetic pathway. The recombinant microorganisms and methods of the invention can also be adapted to produce 2-butanone, an intermediate in the 2-butanol biosynthetic pathways disclosed herein. | 2012-08-02 |
| 20120196342 | Industrial Applications of A Novel Aldo/Keto Reductase Of Zymomonas Mobilis - The present invention relates to methods of reducing the toxicity of lignocellulosic hydrolysates which comprise one or more inhibitors. One method reduces the amount of furfural inhibitor leading to a more effective process. Another method reduces the amount of xylitol produced during the fermentation of xylose present in lignocellulosic hydrolysates. Naturally occurring aldo/keto reductase enzymes, as well as, enzymes produced by recombinant cells or by selective adaptation may be employed. | 2012-08-02 |
| 20120196343 | SELF-ASSEMBLING MULTICELLULAR BODIES AND METHODS OF PRODUCING A THREE-DIMENSIONAL BIOLOGICAL STRUCTURE USING THE SAME - Structures and methods for tissue engineering include a multicellular body including a plurality of living cells. A plurality of multicellular bodies can be arranged in a pattern and allowed to fuse to form an engineered tissue. The arrangement can include filler bodies including a biocompatible material that resists migration and ingrowth of cells from the multicellular bodies and that is resistant to adherence of cells to it. Three-dimensional constructs can be assembled by printing or otherwise stacking the multicellular bodies and filler bodies such that there is direct contact between adjoining multicellular bodies, suitably along a contact area that has a substantial length. The direct contact between the multicellular bodies promotes efficient and reliable fusion. The increased contact area between adjoining multicellular bodies also promotes efficient and reliable fusion. Methods of producing multicellular bodies having characteristics that facilitate assembly of the three-dimensional constructs are also provided. | 2012-08-02 |
| 20120196344 | CYTOBLOCK PREPARATION SYSTEM AND METHODS OF USE - An apparatus and method that may be used for collecting target cells or tissue and preparing a cell block are disclosed. | 2012-08-02 |
| 20120196345 | DOUBLE COATING PROCEDURE FOR THE MEMBRANES OF BIOARTIFICIAL KIDNEYS - The present invention generally relates to modified substrates such as membranes for use in bioartificial organs, such as bioartificial kidneys, and other applications. Certain aspects are generally directed to a membrane or other substrate modified to facilitate the attachment of cells. In one set of embodiments, the substrate or membrane may be at least partially coated with an adhesive such as 3,4-dihydroxy-L-phenylalanine (DOPA), poly(dopamine), or other adhesive comprising a molecule having a catechol moiety, for example on one side of the membrane or substrate. On at least a portion of the adhesive coated portion of the substrate, a protein may be coated, such as an extracellular matrix protein (for example, a collagen), to which cells such as primary human renal proximal tubule cells may be adhered. Surprisingly, such a dual coating may be used to promote the attachment of such cells to a membrane or other substrate that otherwise may not promote cell adhesion. In certain embodiments, the coating may also facilitate or promote not only cell adhesion, but also cell proliferation and/or differentiation. Such membranes or other substrates may be useful, for example, in bioartificial organs such as bioartificial kidneys, hemodialysis cartridges, bioimplants, biosensors, bioreactors, etc. In certain embodiments, cells may be attached to a membrane or other substrate on only one side, while the other side may be kept free of attached cells. | 2012-08-02 |
| 20120196346 | Methods for Generating Stably Linked Complexes Composed of Homodimers, Homotetramers or Dimers of Dimers and Uses - The present invention concerns methods and compositions for stably tethered structures of defined compositions, which may have multiple functionalities and/or binding specificities. Particular embodiments concern homodimers comprising monomers that contain a dimerization and docking domain attached to a precursor. The precursors may be virtually any molecule or structure, such as antibodies, antibody fragments, antibody analogs or mimetics, aptamers, binding peptides, fragments of binding proteins, known ligands for proteins or other molecules, enzymes, detectable labels or tags, therapeutic agents, toxins, pharmaceuticals, cytokines, interleukins, interferons, radioisotopes, proteins, peptides, peptide mimetics, polynucleotides, RNAi, oligosaccharides, natural or synthetic polymeric substances, nanoparticles, quantum dots, organic or inorganic compounds, etc. Other embodiments concern tetramers comprising a first and second homodimer, which may be identical or different. The disclosed methods and compositions provide a facile and general way to obtain homodimers, homotetramers and heterotetramers of virtually any functionality and/or binding specificity. | 2012-08-02 |
| 20120196347 | DELTA-8 DESATURASES AND THEIR USE IN MAKING POLYUNSATURATED FATTY ACIDS - Isolated nucleic acid fragments and recombinant constructs comprising such fragments encoding delta-8 desaturases along with a method of making long-chain polyunsaturated fatty acids (PUFAs) and using these delta-8 desaturases in plants. | 2012-08-02 |
| 20120196348 | Large-scale production of soluble hyaluronidase - Provided are methods for preparing culture medium that contains soluble hyaluronidases. The methods employ cells that contain a plurality of active copies of nucleic acid encoding the soluble hyaluronidase and a plurality of feedings and temperature changes, whereby the encoded soluble hyaluronidase is secreted into the cell culture medium. | 2012-08-02 |
| 20120196349 | Methods and Systems for Purifying Non-Complexed Botulinum Neurotoxin - Methods and systems for chromatographically purifying a | 2012-08-02 |
| 20120196350 | BACTERIUM THAT CAN PERFORM COMPLETE DECHLORINATION OF TRICHLOROETHENE AND THE METHOD TO DECHLORINATE SOILS OR GROUND WATER CONTAMINATED WITH TRICHLOROETHENE USING THE BACTERIUM - The bacterium that can perform complete dechlorination of trichloroethene, and the bacteria consortium containing the bacterium are provided, and the method to dechlorinate soils or ground water contaminated with trichloroethene using the bacterium is also provide. | 2012-08-02 |
| 20120196351 | Process for the Preparation of Talc Based Formulation for LDPE-Degrading Bacterial Consortia - This invention is a process for the preparation of talc based formulation for LDPE-degrading bacterial consortia. The process comprises preparing an active consortium. The active consortium is divided into four parts in centrifuge tubes. The tubes are spun at 5000 rpm. A supernatant is decanted from the tubes. The tubes are vortexed. Talc is added to each tube. The tubes with talc are again vortexed for some time to produce a homogeneous mixture. The mixture is poured into glass dishes. The dishes are kept at room temperature as aseptically for drying. | 2012-08-02 |
| 20120196352 | NOVEL LACTOBACILLUS PLANTARUM AND COMPOSITION COMPRISING SAME - The present invention provides | 2012-08-02 |
| 20120196353 | LIGF-TYPE SYSTEMS FOR BIOCONVERSION OF LIGNIN-DERIVED COMPOUNDS - The teachings provided herein are generally directed to a method of converting lignin-derived compounds to valuable aromatic chemicals using an enzymatic, bioconversion process. The teachings provide a selection of (i) host cells that are tolerant to the toxic compounds present in lignin fractions; (ii) polypeptides that can be used as enzymes in the bioconversion of the lignin fractions to the aromatic chemical products; (iii) polynucleotides that can be used to transform the host cells to express the selection of polypeptides as enzymes in the bioconversion of the lignin fractions; and (iv) the transformants that express the enzymes. | 2012-08-02 |
| 20120196354 | ANALYSIS DEVICE - The analysis device includes a main body, an insertion slot into which a sensor piece is inserted in a manner such that the sensor piece sticks out from the main body in a measurement operation, and a pair of projections spaced apart from each other in a y-direction, with the insertion slot present between the projections. Each of the projections protrudes outwardly in an x-direction and has a height overlapping the insertion slot in a z-direction. | 2012-08-02 |
| 20120196355 | STERILIZATION INDICATOR - The disclosed technology relates to a sterilization indicator, including a carrier, the carrier having a first surface and a second surface; a support, the support having a first section and a second section, the carrier overlying the first section of the support, the second surface of the carrier being adhered to the first section of the support; and a biological indicator supported by the carrier; the sterilization indicator being formed by applying the biological indicator to the carrier and then adhering the carrier to the support, the carrier being adhered to the support using sonic welding, in which the sonic welding, when applied to the carrier with the biological indicator applied, exhibits no significant difference in viability of the biological indicator following the sonic welding as compared to prior to the sonic welding. | 2012-08-02 |
| 20120196356 | COMBINED INSPECTION SYSTEM INCLUDING MID-IR VIBRATIONAL SPECTROSCOPY AND A FLUORESCENT CYTOMETRY FACILITY - This disclosure concerns a cytometry system including a handling system that presents single cells to at least one quantum cascade laser (QCL) source. The QCL laser source configured to deliver light to a cell within the cells in order to induce resonant mid-infrared absorption by one or more analytes of the cell. The system includes a laser source that excites at least one fluorophore present in the cell or on the surface of the cell and a fluorescence detector that measures the fluorescence intensity of the fluorophore. A mid-infrared detection facility detects the transmitted mid-infrared wavelength light, wherein the transmitted mid-infrared wavelength light and the fluorescence intensity are used to identify at least one cell characteristic. | 2012-08-02 |
| 20120196357 | COMPOSTING MACHINE - An apparatus for the in-vessel composting of feedstock into nutrient-rich compost comprising means for shredding said input material, said means configured and powered for shredding said feedstock into a particle size no larger than one cubic inch, a vessel having an input port on top of such vessel and a discharge port, said vessel comprising one chamber, said vessel configured and powered composting said shredded feedstock, and said vessel tilted from the input port to the discharge port, means for passing said feedstock from said means for shredding into said vessel, means for rotating said vessel, means for introducing air into said vessel and a process controller, said process controller communicating with said means for shredding, said vessel, said means for rotating said vessel and said means for introducing air into said vessel. | 2012-08-02 |
| 20120196358 | DEVICE FOR REMOVING CUMULUS FROM OOCYTES - Disclosed herein are devices, methods, and kit of parts adapted for stripping cumulus from a plurality of oocytes contained therein. | 2012-08-02 |
| 20120196359 | POLY-N-ACETYL GLUCOSAMINE (PNAG/dPNAG)-BINDING PEPTIDES AND METHODS OF USE THEREOF - The present invention relates to peptides, particularly human monoclonal antibodies, that bind specifically to poly-N-acetyl glucosamine (PNAG), such as Staphylococcal PNAG, in acetylated, partially acetylated and/or fully deacetylated form. The invention further provides methods for using these peptides in the diagnosis, prophylaxis and therapy of infections by bacteria that express PNAG such as but not limited to Staphylococci and | 2012-08-02 |
| 20120196360 | METHOD OF EFFICIENTLY ESTABLISHING INDUCED PLURIPOTENT STEM CELLS - Provided is a method of producing an iPS cell, comprising bringing (a) Oct3/4 or a nucleic acid that encodes the same, (b) Klf4 or a nucleic acid that encodes the same, and (c) Sox2 or a nucleic acid that encodes the same, as well as (d1) L-Myc or a nucleic acid that encodes the same and/or (d2) a functional inhibitor of p53, into contact with a somatic cell. It is preferable that (a) a nucleic acid that encodes Oct3/4, (b) a nucleic acid that encodes Klf4, (c) a nucleic acid that encodes Sox2, (d1) a nucleic acid that encodes L-Myc and (e) a nucleic acid that encodes Lin28 or Lin28 | 2012-08-02 |
| 20120196361 | MART-1 T CELL RECEPTORS - T-cell receptors that recognize MART-1 antigen are provided. The TCRs can be used, for example, to treat patients suffering from melanoma. | 2012-08-02 |
| 20120196362 | METHOD FOR TREATMENT AND STORAGE OF PLATELETS - Provides are improved methods for storing platelets and compositions that contain stored platelets for use in transfusions. The method entails obtaining a platelet concentrate from blood obtained from an individual and holding the platelet concentrate in at refrigerated temperatures under an atmosphere having a pressure of from 3.5 to 5 bars comprising more than 65% xenon and for at least one week. Also provided is a refrigerated composition that contains a platelet concentrate, wherein the platelet concentrate contains xenon, and wherein the platelet concentrate has been isolated from an individual for at least seven days. | 2012-08-02 |
| 20120196363 | METHOD FOR MODULATING ACTIVITY OF T LYMPHOCYTES - The invention relates to methods and compositions which modulate T lymphocyte activity. It has been found that two, T lymphocyte receptors, especially TCR and CD8, are present at a distance from each other on T lymphocyte surfaces. Via use of modulators which change the distance between these receptors, the activity of the T lymphocyte is modulated. | 2012-08-02 |
| 20120196364 | INHIBITION OF MIGRATION AND INDUCTION OF CELL DEATH BY THE TYPE II COLLAGEN AMINO PROPEPTIDES - The present invention provides combinations and methods for inducing cell death, inhibiting angiogenesis, and inhibiting cell migration. In particular, the present invention provides methods for inducing cell death in a cell expressing an αvβ3 and/or an αvβ5 integrin. | 2012-08-02 |
| 20120196365 | Differentiation of Pluripotent Stem Cells - The present invention is directed to methods to differentiate pluripotent stem cells. In particular, the present invention is directed to methods and compositions to differentiate pluripotent stem cells into cells expressing markers characteristic of the definitive endoderm lineage comprising culturing the pluripotent stem cells in medium comprising a sufficient amount of GDF-8 to cause the differentiation of the pluripotent stem cells into cells expressing markers characteristic of the definitive endoderm lineage. | 2012-08-02 |
| 20120196366 | METHOD FOR FORMING NERVE GRAFT - A method for forming a nerve graft includes the following steps. A carbon nanotube structure is provided. A hydrophilic layer is formed on a surface of the carbon nanotube structure. The hydrophilic layer is polarized to form a polar surface on the hydrophilic layer. A number of neurons are formed on the polar surface of the hydrophilic layer to form a nerve network. The neurons connect with each other. | 2012-08-02 |
| 20120196367 | METHOD FOR CULTURING CELLS ON CULTURE MEDIUM - A method for culturing a number of cells includes the following steps. A culture medium is provided. The culture medium has a carbon nanotube structure and a hydrophilic layer. The hydrophilic layer is formed on a surface of the carbon nanotube structure. A polar layer is formed on a surface of the hydrophilic layer away from the carbon nanotube structure. The cells are seeded and cultured on the polar layer. | 2012-08-02 |
| 20120196368 | CULTURE MEDIUM - A culture medium includes a carbon nanotube structure and a hydrophilic layer. The culture medium is capable of culturing at least one neuron. The hydrophilic layer has a polar surface and is located on a surface of the carbon nanotube structure. The polar surface is located on a surface of the hydrophilic layer away from the carbon nanotube structure, and has a polarity attracted to a polarity of the at least one neuron. | 2012-08-02 |
| 20120196369 | METHOD FOR FORMING CULTURE MEDIUM - A method for forming a culture medium includes the following steps. A carbon nanotube structure is provided. A hydrophilic layer is formed on a surface of the carbon nanotube structure. The hydrophilic layer is polarized to form a polar surface on the hydrophilic layer. A number of neurons are formed on the polar surface of the hydrophilic layer. | 2012-08-02 |
| 20120196370 | METHODS AND COMPOSITIONS FOR TARGETED GENOMIC DELETION - Disclosed herein are compositions and methods for generating chromosomal translocations and targeted deletions of specific lengths and at specific locations the genome of cell. | 2012-08-02 |
| 20120196371 | MULTI PLASMIDS SYSTEM FOR THE PRODUCTION OF INFLUENZA VIRUS - Vectors and methods for the production of influenza viruses suitable as recombinant influenza vaccines in cell culture are provided. Bi-directional expression vectors for use in a multi-plasmid influenza virus expression system are provided. Additionally, the invention provides methods of producing influenza viruses with enhanced ability to replicate in embryonated chicken eggs and/or cells (e.g., Vero and/or MDCK) and further provides influenza viruses with enhanced replication characteristics. In addition, the present invention includes an improved method of rescue, wherein animal cells (e.g., SF Vero cells) are electroporated with plasmids and vectors of the invention. | 2012-08-02 |
| 20120196372 | Methods for Reducing Gluconoylation of Proteins - The present invention relates to methods of preventing glyconoylation of polypeptides produced in micororganisms. | 2012-08-02 |
| 20120196373 | System For Visual Indication Of Mechanical Damage - A self-indicating material system may include a solid polymer matrix having a first color, a first plurality of capsules in the matrix, and a plurality of particles in the matrix. The first plurality of capsules includes a first reactant, and the plurality of particles includes a second reactant, which forms a product when in contact with the first reactant. When a crack forms in the polymer matrix, at least a portion of the first plurality of capsules is ruptured, the first and second reactants form the product in the matrix, and the portion of the polymer matrix containing the product has a second color different from the first color. A self-indicating material system may include a solid polymer matrix, a plurality of capsules in the matrix, and an activator in the matrix, where the polymer matrix includes a first polymer and has a first color, the plurality of capsules includes a polymerizer, and the activator is an activator for the polymerizer. When a crack forms in the polymer matrix, at least a portion of the plurality of capsules is ruptured, the polymerizer and the activator form a second polymer in the crack, and the second polymer has a second color different from the first color. | 2012-08-02 |
| 20120196374 | DISPENSER, ANALYZER AND DISPENSING METHOD - A dispenser, analyzer and dispensing method are provided, which can dispense a predetermined amount of a blood cell sample without being influenced by an individual difference of the blood cell sample. The apparatus according to the present invention includes: a pressure sensor measuring pressure within a pipe during liquid suction by a dispensing probe, a calculation section calculating an average pressure value during liquid suction, measured by the pressure sensor; a storage section storing a correlation between the average pressure value and a discharge operation amount during liquid suction for each desired discharge amount; a correction section correcting the discharge operation amount based on the average pressure amount during suction calculated by the calculation section and the correlation stored in the storage section; and a control section controlling a syringe pump based on the discharge operation amount corrected by the correction section to discharge the desired discharge amount. | 2012-08-02 |
| 20120196375 | Compositions and Methods for Detection of Soils on Fabrics - The present invention is in the field of household cleaning, for example laundry products and methods. The invention is directed to the use of indicator materials, such as fluorescent indicator materials, for detecting or visualizing organic laundry soils, particularly those that tend to be invisible to the naked eye, such as sebum, perspiration, biological soils, odor-causing soils/stains and tannins. In addition, the present invention is directed to methods of using indicator materials, such as fluorescent indicator materials, to detect such soils on fabrics, and to determine and demonstrate the cleaning efficacy of a laundry product. | 2012-08-02 |
| 20120196376 | NANOFILTER DEVICES USING ELASTOMERIC MICRO TO NANOCHANNEL INTERFACES AND METHODS BASED THEREON - A method is provided for fabricating a nanochannel. The method comprises providing a microchannel and controlling collapse of the microchannel so that it collapses to form a nanochannel of desired dimensions. The method employs a collapsible, flexible material such as the elastomer polydimethylsiloxane (PDMS) to form the nanochannel. A master is provided that is configured to have geometric conditions that promote a desired frequency of microchannel collapse. A collapsible material having a stiffness that also promotes a desired frequency of microchannel collapse is molded on the master. The molded collapsible material is removed from the master and bonded to a base, thereby forming the microchannel, which then collapses (or is collapsed) to form the nanochannel of desired dimensions. Nanofluidic and microfluidic devices comprising complex nanochannel structures and micro to nanochannel transitions are also provided. | 2012-08-02 |
| 20120196377 | FLUORESCENT MOLECULE AND METHOD FOR DETECTING TARGET NUCLEIC ACID - Provided are a fluorescent on/off switchable compound for a gene analysis, which is highly stable and highly sensitive, and enables amplification and observation of a trace gene signal, and a labeling reagent for detection of a bio-related material, which uses the fluorescent on/off switchable compound. A compound represented by the following formula (I′): | 2012-08-02 |
| 20120196378 | Methods, Mixtures, Kits and Compositions Pertaining to Analyte Determination - This invention pertains to methods, mixtures, kits and compositions pertaining to analyte determination by mass spectrometry using labeling reagents that comprise a nucleophilic reactive group that reacts with a functional group of an analyte to produce a labeled analyte. The labeling reagents can be used as isobaric sets, mass differential labeling sets or in a combination of isobaric and mass differential labeling sets. | 2012-08-02 |
| 20120196379 | METHODS AND DEVICES FOR DETECTING UNSATURATED COMPOUNDS - A method for detecting an unsaturated compound, the method comprising monitoring change in electrical properties of a substance that reacts or interacts with unsaturated compounds. | 2012-08-02 |
| 20120196380 | SYSTEM AND METHOD FOR DETECTION OF CONTAMINANTS IN AN AIRFLOW - A method for detecting contaminants in an airflow includes urging an airflow from a desired source location into a volume of water. The airflow is mixed into the water, and particles are dissolved in the water. A change in a property of the volume water is measured via a detection probe, indicative of an amount of particles present in the volume of water. A system for detecting particles includes a container configured to contain a volume of water and an airflow inlet in the container configured to introduce an airflow into the volume of water from a desired source location. A detection probe is located in the container to detect changes in a selected property of the volume of water after introduction of the airflow into the volume of water thereby indicating presence of particles in the airflow. | 2012-08-02 |
| 20120196381 | Miniaturized Microparticles - An encoded microparticle having a spatial code is provided; and a set of encoded microparticles possessing subsets each provided with a distinguishable spatial code, wherein the codes comply with a pre-determined coding scheme. Presented are also methods of using the encoded microparticles in various biological assays, such as various multiplex assays and visualizing them by creating a digital image of the encoded microparticles and determining whether false positives are present. Further are provided methods of manufacture of the encoded microparticles which employ ferromagnetic nanoparticles applied using spin-on-glass techniques. | 2012-08-02 |
| 20120196382 | Multicoded Analytical Nanostrips - Analytical nanostrips for clinical analysis are improved by using multifunctional coding (“multicoding”) to allow simultaneous identification of the particular assay, the value of the assayed analyte, and a calibration of the analyte. The multicoding layout on the nanostrip minimizes the number of zones that are required for a given assay. Moreover, the nanostrip can be scanned in real time during flow of the nanostrip through a detection beam. This both simplifies the assay and allows for alternative means of coding. | 2012-08-02 |
| 20120196383 | INTEGRATED OPTOFLUIDIC SYSTEM USING MICROSPHERES - An integrated optofluidic system for trapping and transporting particles for analysis is provided comprising a planar substrate; a microfluidic channel; and a waveguide integrated with the channel. A microsphere particle in the integrated optofluidic system can act as a cavity, allowing light to circulate many thousands of times around the circumference of the microsphere. Optical trapping and transport is used for nanoscale positioning to excite the microsphere resonances. Sensitive measurements on molecules can be accomplished by monitoring changes in whispering gallery modes (WGMs) that propagate around the circumference of the microsphere. By using a broadband or supercontinuum light source, a microsphere can be trapped and many WGM resonances can be excited through the visible and near-infrared wavelengths simultaneously. After the resonances are measured using the waveguide transmission, the microsphere can be freed by decreasing the optical power and the process repeated with a different microsphere. | 2012-08-02 |
| 20120196384 | BIOSENSOR UTILIZING A RESONATOR HAVING A FUNCTIONALIZED SURFACE - Systems and methods for detecting the presence of biomolecules in a sample using biosensors that incorporate resonators which have functionalized surfaces for reacting with target biomolecules. In one embodiment, a device includes a piezoelectric resonator having a functionalized surface configured to react with target molecules, thereby changing the mass and/or charge of the resonator which consequently changes the frequency response of the resonator. The resonator's frequency response after exposure to a sample is compared to a reference, such as the frequency response before exposure to the sample, a stored baseline frequency response or a control resonator's frequency response. | 2012-08-02 |
| 20120196385 | ASSAY METHOD AND KIT FOR ASSAY EMPLOYING SENSOR CHIP FOR FLUORESCENT MEASURING APPARATUS UTILIZING SURFACE PLASMON-FIELD ENHANCED FLUORESCENCE SPECTROMETRY - An assay method with use of a sensor chip which includes a metal member, a self-assembled monolayer (SAM), and ligands on a support, and is configured to be used for a fluorescence measuring apparatus with utilization of a surface plasmon-field enhanced Fluorescence Spectrometry, including the steps of: forming a hydrophilic high molecule layer on the self-assembled monolayer in the sensor chip; immobilizing the ligands at least one of in the hydrophilic high molecule layer and on the surface of the hydrophilic high molecule layer; and bringing a moisturizer in contact with the hydrophilic high molecule layer. | 2012-08-02 |
| 20120196386 | METHOD OF MANUFACTURING SEMICONDUCTOR MODULE - A method of manufacturing a semiconductor module is provided. The method includes forming semiconductor chips on a bare substrate, performing a burn-in process on the bare substrate including the semiconductor chips, sorting semiconductor chips that exceed a predetermined level of operability determined by testing electrical driving in the semiconductor chips on the burned-in bare substrate, separating the semiconductor chips from one another by cutting the bare substrate, and directly mounting the module semiconductor chips on a module substrate. | 2012-08-02 |
| 20120196387 | SUBSTRATE PROCESSING METHOD - The present invention provides a substrate processing method to process a substrate including at least a process layer, an intermediate layer, and a mask layer which are stacked in this order. The mask layer includes an aperture configured to expose a portion of the intermediate layer. The substrate processing method includes a material deposition step of depositing a material on a side surface of the aperture and exposing a portion of the process layer by etching the exposed portion of the intermediate layer by plasma generated from a deposit gas, and an etching step of etching the exposed portion of the process layer. | 2012-08-02 |
| 20120196388 | METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE AND MANUFACTURING APPARATUS OF LIGHT-EMITTING DEVICE - An object is to provide a method for manufacturing a light-emitting device in which a defective portion is insulated. In addition, another object is to provide a manufacturing apparatus of a light-emitting device in which a defective portion is insulated. After a hemispherical lens is formed to overlap with a light-emitting element, the defective portion is detected. Then, the hemispherical lens overlapping with the light-emitting element including the detected defective portion may be irradiated with a laser beam having a low energy density, and the defective portion may be insulated by light condensed through the hemispherical lens. | 2012-08-02 |
| 20120196389 | DEFECT INSPECTION METHOD AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - According to one embodiment, electrolytic solution is selectively jetted onto an imprint pattern, the electrolytic solution is jetted onto each shot or part of an area in a shot, an electrode is separated for each shot, and the electrode is switched according to a shot to be an inspection target. | 2012-08-02 |
| 20120196390 | 3D SEMICONDUCTOR DEVICE WITH REDUNDANCY - A method for manufacturing system includes 3D-IC comprising at least first layer of first transistors and second layers of second transistors and, perform a test for the circuit constructed with said first transistors and switch in function constructed with said second transistors to replace function constructed with said first transistors. | 2012-08-02 |
| 20120196391 | METHOD FOR FABRICATING SEMICONDUCTOR LIGHTING CHIP - A method for fabricating a semiconductor lighting chip includes steps: providing a substrate with an epitaxial layer, the epitaxial layer comprising a first semiconductor layer, a second semiconductor layer and an active layer located between the first semiconductor layer and the second semiconductor layer; dipping the epitaxial layer into an electrolyte to etch surfaces of the epitaxial layer and form a number of holes on the epitaxial layer; and forming electrodes on the epitaxial layer. | 2012-08-02 |
| 20120196392 | PIXEL DESIGNS OF IMPROVING THE APERTURE RATIO IN AN LCD - In one aspect of this invention, a pixel structure includes a scan line formed on a substrate and a data line formed over the substrate defining a pixel area, a switch formed inside the pixel area on the substrate, a shielding electrode having a first portion and a second portion extending from the first portion, and formed over the scan line, the data line and the switch, where the first portion is overlapped with the switch and the second portion is overlapped with the data line, and a pixel electrode having a first portion and a second portion extending from the first portion, and formed over the shielding electrode in the pixel area, where the first portion is overlapped with the first portion of the shielding electrode so as to define a storage capacitor therebetween and the second portion has no overlapping with the second portion of the shielding electrode. | 2012-08-02 |
| 20120196393 | PACKAGING METHOD OF WAFER LEVEL CHIPS - A packaging method of wafer level chips including following steps is provided. First, a plurality of chips attached on a first film is provided, and the chips on the first film are disposed respectively corresponding to a plurality of electrode patterns of a substrate. Then, a phosphor layer is respectively formed on at least one surface of each of the chips. Next, a second film is disposed on the phosphor layers, and the second film is opposite to the first film. Further, the first film is removed from the base surface of each of the chips. Then, the base surfaces of the chips are attached to the substrate. Afterward, each of the chips is electrically connected with the corresponding electrode pattern through a wire bonding. Finally, a packaging gel is provided to cover each of the chips, and the packaging gel is solidified. | 2012-08-02 |
| 20120196394 | METHODS FOR THE MANUFACTURE OF HIGH EFFICIENCY BACKLIGHT ASSEMBLIES FOR FLAT PANEL DISPLAY ASSEMBLIES - A backlight assembly is provided for deployment within a flat panel display assembly, as are methods for manufacturing such a backlight assembly. In one embodiment, the method includes the steps of fabricating a printed wiring board (PWB) having a display-facing surface, disposing a casing sidewall around the PWB to create light cavity within the backlight assembly, and electrically coupling a plurality of light emitting diodes (LEDs) to the PWB. A reflective solder mask is deposited over the display-facing surface of the PWB, and a first reflective silkscreen layer is applied over the reflective solder mask utilizing a silkscreen process. The first reflective silkscreen layer cooperates with the reflective solder mask to increase the reflectivity of the light cavity over the visible color spectrum. | 2012-08-02 |
| 20120196395 | METHOD FOR CRYSTALLIZING THIN FILM, METHOD FOR MANUFACTURING THIN FILM SEMICONDUCTOR DEVICE, METHOD FOR MANUFACTURING ELECTRONIC APPARATUS, AND METHOD FOR MANUFACTURING DISPLAY DEVICE - A method for crystallizing a thin film A gate insulating film formed on a substrate so as to cover a gate electrode. A light absorption layer is formed thereon through a buffer layer. Energy lines Lh are applied to the light absorption layer from a continuous-wave laser such as a semiconductor laser. This anneals only a surface side of the light absorption layer Lh and produces a crystalline silicon film obtained by crystallizing the amorphous silicon film using heat generated by thermal conversion of the energy lines Lh at the light absorption layer and heat of the annealing reaction. | 2012-08-02 |
| 20120196396 | METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP - A method for fabricating a light emitting diode (LED) chip is provided. First, a substrate is provided. A buffer layer is formed on the substrate. The buffer layer is patterned to form a plurality of recesses on a surface thereof. A first type semiconductor layer is formed on the surface of the buffer layer. A portion of the surface where the first type semiconductor layer and the buffer layer are in contact constitutes a bonding surface, and voids exist between the buffer layer and the first type semiconductor layer. An active layer and a second type semiconductor layer are formed on the first type semiconductor layer in sequence. A second electrode is formed on the second type semiconductor layer. A lift-off process is performed to separate the first type semiconductor layer and the buffer layer. | 2012-08-02 |
| 20120196397 | Methods of Building Crystalline Silicon Solar Cells For Use In Combinatorial Screening - Embodiments of the current invention describe methods of forming different types of crystalline silicon based solar cells that can be combinatorially varied and evaluated. Examples of these different types of solar cells include front and back contact silicon based solar cells, all-back contact solar cells and selective emitter solar cells. These methodologies all incorporate the formation of site-isolated regions using a combinatorial processing tool and the use of these site-isolated regions to form the solar cell area. Therefore, multiple solar cells may be rapidly formed on a single crystalline silicon substrate for use in combinatorial methodologies. Any of the individual processes of the methods described may be varied combinatorially to test varied process conditions or materials. | 2012-08-02 |
| 20120196398 | PHOTODIODE ARRAY, METHOD FOR MANUFACTURING PHOTODIODE ARRAY, EPITAXIAL WAFER, AND METHOD FOR MANUFACTURING EPITAXIAL WAFER - Provided are a photodiode array and its manufacturing method, which maintain the crystalline quality of an absorption layer formed on a group III-V semiconductor substrate to obtain excellent characteristics, and which improve the crystallinity at the surface of a window layer; an epitaxial wafer used for manufacturing the photodiode array; and a method for manufacturing the epitaxial wafer. A method for manufacturing a photodiode array | 2012-08-02 |
| 20120196399 | Nitrogen Reactive Sputtering of Cu-In-Ga-N For Solar Cells - Methods for forming Cu—In—Ga—N (CIGN) layers for use in TFPV solar panels are described using reactive PVD deposition in a nitrogen containing atmosphere. In some embodiments, the CIGN layers can be used as an absorber layer and eliminate the need of a selenization step. In some embodiments, the CIGN layers can be used as a protective layer to decrease the sensitivity of the CIG layer to oxygen or moisture before the selenization step. In some embodiments, the CIGN layers can be used as an adhesion layer to improve the adhesion between the back contact layer and the absorber layer. | 2012-08-02 |
| 20120196400 | METHOD OF MANUFACTURING SOLAR BATTERY - When a layered structure of a transparent electrode layer and a metal layer is formed as a back side electrode layer over a surface on a side opposite to a side of incidence of light of a thin film solar battery, a time when formation of the transparent electrode layer is completed and a time when formation of the metal layer is started are made to coincide for one substrate. | 2012-08-02 |
| 20120196401 | Nano/Microwire Solar Cell Fabricated by Nano/Microsphere Lithography - Techniques for fabricating nanowire/microwire-based solar cells are provided. In one, a method for fabricating a solar cell is provided. The method includes the following steps. A doped substrate is provided. A monolayer of spheres is deposited onto the substrate. The spheres include nanospheres, microspheres or a combination thereof. The spheres are trimmed to introduce space between individual spheres in the monolayer. The trimmed spheres are used as a mask to pattern wires in the substrate. The wires include nanowires, microwires or a combination thereof. A doped emitter layer is formed on the patterned wires. A top contact electrode is deposited over the emitter layer. A bottom contact electrode is deposited on a side of the substrate opposite the wires. | 2012-08-02 |
| 20120196402 | IMPLEMENTING MULTIPLE DIFFERENT TYPES OF DIES FOR MEMORY STACKING - A method and structure are provided for implementing multiple different types of dies for memory stacking. A common wafer is provided with a predefined reticle type. The reticle type includes a plurality of arrays, and a plurality of periphery segments. A plurality of through-silicon-vias (TSVs) is placed at boundaries between array and periphery segments. Multiple different types of dies for memory stacking are obtained based upon selected scribing of the dies from the common wafer. | 2012-08-02 |
| 20120196403 | Rule-Based Semiconductor Die Stacking And Bonding Within A Multi-Die Package - A rule-based method of optimizing wire bonding jumps is disclosed which minimizes the amount of wire used for wire bonds and/or minimizes a number of power and ground pads on a substrate to support all wired connections. | 2012-08-02 |
| 20120196404 | Adhesive Compositions for a Semiconductor, an Adhesive Sheet for a Semiconductor and a Production Method of a Semiconductor Device - An adhesive composition for a semiconductor includes an acrylic polymer (A), an epoxy-based heat curable resin (B), a heat curing agent (C), a silane compound (D) having an organic functional group, molecular weight of 300 or more and an alkoxy equivalent of larger than 13 mmol/g, and a silane compound (E) having an organic functional group, molecular weight of 300 or less and an alkoxy equivalent of 13 mmol/g or less. | 2012-08-02 |
| 20120196405 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device comprises: preparing a lead frame including a package external region and a package internal region, a burred surface being provided at a top end of a side of the lead frame, and a fracture surface being provided in the vicinity of the top end of the side; chamfering the top end of the side in the package external region; mounting a semiconductor element on the lead frame and sealing the semiconductor element with mold resin in the package internal region; and removing resin burr provided on the side of the lead frame in the package external region after the chamfering and the sealing. | 2012-08-02 |
| 20120196406 | Semiconductor Package with Embedded Die - A semiconductor package having an embedded die and solid vertical interconnections, such as stud bump interconnections, for increased integration in the direction of the z-axis (i.e., in a direction normal to the circuit side of the die). The semiconductor package can include a die mounted in a face-up configuration (similar to a wire bond package) or in a face-down or flip chip configuration. | 2012-08-02 |
| 20120196407 | SINGLE LAYER BGA SUBSTRATE PROCESS - Embodiments of the present disclosure provide semiconductor packaging techniques that form a substrate using metal and insulating materials. The substrate includes a first surface that is bonded to a semiconductor device and a second surface that is bonded to a printed circuit board. The substrate is formed using several techniques that minimize the amount of mask levels used to form the substrate. For example, a metal substrate is patterned to form a three dimensional pattern on the surface. A dielectric material is deposited on the three dimensional pattern. Using several patterning and polishing embodiments described herein, the metal/dielectric substrate is patterned and polished to form a substantially flush surface that is bonded to the semiconductor device. In one embodiment, the top surface of the metal/dielectric substrate is patterned to expose the underlying metal substrate and the bottom surface of the metal substrate is polished to be substantially flush with the dielectric material. | 2012-08-02 |
| 20120196408 | MULTICHIP ELECTRONIC PACKAGES AND METHODS OF MANUFACTURE - A multi-chip electronic package and methods of manufacture are provided. The multi-chip package includes a plurality of chips mounted on a chip carrier. The multi-chip package further includes a lid mounted on the chip carrier using a bonding material or compression seal, and at least one single piston extending from the lid. Each piston covers an entirety of multiple chips of the plurality of chips. | 2012-08-02 |
| 20120196409 | 3D SEMICONDUCTOR DEVICE - A semiconductor device includes a first mono-crystallized semiconductor layer; and a second mono-crystallized semiconductor layer; wherein said first and second mono-crystallized semiconductor layers are overlaying one on top of the other, and wherein said first mono-crystallized semiconductor layer comprise repeating memory structure with sub structures defined by etching. | 2012-08-02 |
| 20120196410 | METHOD FOR FABRICATING FIN FIELD EFFECT TRANSISTOR - A method for fabricating a fin-FET, wherein the method comprises several steps as follows: A substrate is first provided, and a silicon fin is then formed in the substrate. Next a dielectric layer is formed on the silicon fin and the substrate. A poly silicon layer is subsequently formed on the dielectric layer, and the poly silicon layer is then planarized. Subsequently, a poly silicon gate is formed and a portion of the silicon fin is exposed by patterning the planarized poly silicon layer. A source and a drain are separately formed on two opposite sides of the exposed silicon fin adjacent to the poly silicon gate. | 2012-08-02 |
| 20120196411 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME - A device and a method for manufacturing the same in which with device includes a single crystal semiconductor substrate and an SOI substrate separated from the single crystal semiconductor substrate by a thin buried insulating film and having a thin single crystal semiconductor thin film (SOI layer) in which well diffusion layer regions, drain regions, gate insulating films, and gate electrodes of the SOI-type MISFET and the bulk-type MISFET are formed in the same steps. The bulk-type MISFET and the SOI-type MISFET are formed on the same substrate, so that board area is reduced and a simple process can be realized by making manufacturing steps of the SOI-type MISFET and the bulk-type MISFET common. | 2012-08-02 |
| 20120196412 | HIGH PERFORMANCE STRESS-ENHANCED MOSFETS USING SI:C AND SIGE EPITAXIAL SOURCE/DRAIN AND METHOD OF MANUFACTURE - A semiconductor device and method of manufacturing a semiconductor device. The semiconductor device includes channels for a pFET and an nFET. A SiGe layer is selectively grown in the source and drain regions of the pFET channel and a Si:C layer is selectively grown in source and drain regions of the nFET channel. The SiGe and Si:C layer match a lattice network of the underlying Si layer to create a stress component. In one implementation, this causes a compressive component in the pFET channel and a tensile component in the nFET channel. | 2012-08-02 |
| 20120196413 | METHOD AND STRUCTURE TO IMPROVE BODY EFFECT AND JUNCTION CAPACITANCE - A method and structure implant a first-type impurity within a substrate to form a channel region within the substrate adjacent a top surface of the substrate; form a gate stack on the top surface of the substrate above the channel region; and implant a second-type impurity within the substrate to form source and drain regions within the substrate adjacent the top surface. The channel region is positioned between the source and drain regions. The second-type impurity has an opposite polarity with respect to the first-type impurity. The method and structure implant a greater concentration of the first-type impurity, relative to a concentration of the first-type impurity within the channel region, to form a primary body doping region within the substrate below (relative to the top surface) the channel region; and to form secondary body doping regions within the substrate below (relative to the top surface) the source and drain regions. | 2012-08-02 |
| 20120196414 | Power MOSFET Having a Strained Channel in a Semiconductor Heterostructure on Metal Substrate - A method for forming a semiconductor device includes forming a graded silicon-germanium (SiGe) layer overlying a silicon substrate, a concentration of germanium increasing with a thickness of the graded silicon germanium layer. A first relaxed SiGe layer is formed over the graded SiGe layer, and a second relaxed SiGe layer overlying the first relaxed SiGe layer. The second relaxed SiGe layer has a lower conductivity than the first relaxed SiGe layer. The method also includes forming a field effect transistor having a trench extending into the second relaxed SiGe layer and a channel region that includes a layer of strained silicon to enable enhanced carrier mobility. A top conductor layer is formed overlying the second relaxed SiGe layer, and then the silicon substrate and the graded SiGe layer are removed. A bottom conductor layer is formed underlying the first relaxed SiGe layer. | 2012-08-02 |
| 20120196415 | SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR - A method of producing a semiconductor device including a MOS transistor, includes the steps of forming, on a top surface of at least one of semiconductor pillars, an epitaxial layer having a top surface larger in area than the top surface of the at least one of the semiconductor pillars and forming a source region or a drain region so as to be at least partially in the epitaxial layer. | 2012-08-02 |
| 20120196416 | TRENCH MOSFET WITH ULTRA HIGH CELL DENSITY AND MANUFACTURE THEREOF - A trench MOSFET structure with ultra high cell density is disclosed, wherein the source regions and the body regions are located in different regions to save the mesa area between every two adjacent gate trenches in the active area. Furthermore, the inventive trench MOSFET is composed of stripe cells to further increase cell packing density and decrease on resistance Rds between the drain region and the source region. | 2012-08-02 |
| 20120196417 | Sophisticated Gate Electrode Structures Formed by Cap Layer Removal with Reduced Loss of Embedded Strain-Inducing Semiconductor Material - When forming sophisticated gate electrode structures, such as high-k metal gate electrode structures, an appropriate encapsulation may be achieved, while also undue material loss of a strain-inducing semiconductor material that is provided in one type of transistor may be avoided. To this end, the patterning of the protective spacer structure prior to depositing the strain-inducing semiconductor material may be achieved for each type of transistor on the basis of the same process flow, while, after the deposition of the strain-inducing semiconductor material, an etch stop layer may be provided so as to preserve integrity of the active regions. | 2012-08-02 |
| 20120196418 | METHOD OF FABRICATING TRANSISTORS - A method of fabricating transistors includes: providing a substrate including an N-type well and P-type well; forming a first gate on the N-type well and a second gate on the P-type well, respectively; forming a third spacer on the first gate; forming an epitaxial layer in the substrate at two sides of the first gate; forming a fourth spacer on the second gate; forming a silicon cap layer covering the surface of the epitaxial layer and the surface of the substrate at two sides of the fourth spacer; and forming a first source/drain doping region and a second source/drain doping region at two sides of the first gate and the second gate respectively. | 2012-08-02 |
| 20120196419 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - In an MIS-type GaN-FET, a base layer made of a conductive nitride including no oxygen, here, TaN, is provided on a surface layer as a nitride semiconductor layer to cover at least an area of a lower face of a gate insulation film made of Ta | 2012-08-02 |
| 20120196420 | Methods of Forming Silicide Regions and Resulting MOS Devises - A semiconductor device with improved roll-off resistivity and reliability are provided. The semiconductor device includes a gate dielectric overlying a semiconductor substrate, a gate electrode overlying the gate dielectric, a gate silicide region on the gate electrode, a source/drain region adjacent the gate dielectric, and a source/drain silicide region on the source/drain region, wherein the source/drain silicide region and the gate silicide region have different metal compositions. | 2012-08-02 |
| 20120196421 | STRESS ADJUSTING METHOD - An stress adjusting method includes the following steps. A substrate is provided. A first gate structure and a second gate structure adjacent to the first gate structure are formed on the substrate. Each of the first gate structure and the second gate structure includes a spacer. A source/drain implantation process is applied to the substrate by using the first gate structure with the spacer and the second gate structure with the spacer as a mask. After the source/drain implantation process, the spacers are thinned so as to increase a distance between the first gate structure and the second gate structure. A stress film is formed. A first annealing process is applied to the substrate having the stress film. | 2012-08-02 |
| 20120196422 | Stress Memorization Technique Using Gate Encapsulation - Generally, the subject matter disclosed herein relates to sophisticated semiconductor devices and methods for forming the same, wherein a stress memorization technique is used to enhance the performance of MOS transistor elements. One illustrative embodiment includes a method for forming a gate electrode above a channel region of a semiconductor device, wherein the channel region is formed in an active region of a semiconductor substrate. The method further includes forming a dielectric encapsulating layer in direct contact with the gate electrode, and performing a heat treatment process to induce a residual stress in the channel region. | 2012-08-02 |
| 20120196423 | METHOD OF FABRICATION BODIES FOR AN EMBEDDED POLYSILICON RESISTOR AND AN EMBEDDED eFUSE ISOLATED FROM A SUBSTRATE - A method includes providing a substrate having insulating layers thereon; forming a first trench in a first region of the substrate and a second trench in a second region of the substrate; thermally growing layers of oxide along the sides of the trenches; filling the first trench and the second trench with a polysilicon material, planarizing the polysilicon material, and creating a shallow trench isolation between the first region and the second region, wherein the step f) of creating the shallow trench isolation is performed only after the steps of d) filling and e) planarizing. | 2012-08-02 |
| 20120196424 | METHOD OF FABRICATING A DEEP TRENCH (DT) METAL-INSULATOR-METAL (MIM) CAPACITOR - A method includes providing an SOI substrate including a layer of silicon disposed atop a layer of an oxide, the layer of an oxide being disposed atop the semiconductor substrate; forming a deep trench having a sidewall extending through the layer of silicon and the layer of an oxide and into the substrate; depositing a continuous spacer on the sidewall to cover the layer of silicon, the layer of an oxide and a part of the substrate; depositing a first conformal layer of a conductive material throughout the inside of the deep trench; creating a silicide within the deep trench in regions extending through the sidewall into an uncovered part of the substrate; removing the first conformal layer from the continuous spacer; removing the continuous spacer; depositing a layer of a high k dielectric material throughout the inside of the deep trench, and depositing a second conformal layer of a conductive material onto the layer of a high-k dielectric material. | 2012-08-02 |
| 20120196425 | High-K Metal Gate Electrode Structures Formed by a Replacement Gate Approach Based on Superior Planarity of Placeholder Materials - When forming sophisticated high-k metal gate electrode structures on the basis of a replacement gate approach, superior process uniformity may be achieved by implementing at least one planarization process after the deposition of the placeholder material, such as the polysilicon material, and prior to actually patterning the gate electrode structures. | 2012-08-02 |
| 20120196426 | WAFER DICING PRESS AND METHOD AND SEMICONDUCTOR WAFER DICING SYSTEM INCLUDING THE SAME - In a wafer dicing press for reducing time and cost for wafer dicing and for evenly applying a dicing pressure to a whole wafer, a wafer dicing press includes a support unit supporting a first side of a wafer; and a pressurization device applying a pressure, by dispersing the pressure, to a second side of the wafer so that a laser-scribed layer of the wafer operates as a division starting point. Accordingly, the wafer dicing press reduces laser radiation and pressure-application times for dividing a wafer into semiconductor devices. This increased efficiency is achieved without increasing the likelihood of damaging the wafer. | 2012-08-02 |
| 20120196427 | LASER WORKING METHOD, LASER WORKING APPARATUS, AND ITS MANUFACTURING METHOD - An object is irradiated with a laser light modulated by a reflection type spatial light modulator such that aberration of the laser light converged inside the object becomes a predetermined aberration or less. Therefore, aberration of the laser light generated at a position on which a converging point of the laser light is located is made as small as possible, to enhance the energy density of the laser light at that position, which makes it possible to form a modified region with a high function as a starting point for cutting. In addition, because the reflection type spatial light modulator is used, it is possible to improve the utilization efficiency of the laser light as compared with a transmissive type spatial light modulator. | 2012-08-02 |
| 20120196428 | ION IMPLANTATION METHOD AND ION IMPLANTATION APPARATUS - In an ion implantation method, ion implantation into a substrate is performed while changing a relative positional relation between an ion beam and the substrate. A first ion implantation process in which a uniform dose amount distribution is formed within the substrate and a second ion implantation process in which a non-uniform dose amount distribution is formed within the substrate are performed in a predetermined order. Moreover, a cross-sectional size of an ion beam irradiated on the substrate during the second ion implantation process is set smaller than a cross-sectional size of an ion beam irradiated on the substrate during the first ion implantation process. | 2012-08-02 |
| 20120196429 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device that includes a semiconductor substrate is provided. The method includes: exposing a photoresist coated on the semiconductor substrate using a photomask including a plurality of regions having different light transmittances; developing the photoresist to form a resist pattern including a plurality of regions having different thicknesses that depend on an exposure amount of the photoresist; and implanting impurity ions into the semiconductor substrate through the plurality of regions of the resist pattern having different thicknesses to form a plurality of impurity regions whose depths from a surface of the semiconductor substrate to peak positions are different from each other. The depths to the peak positions depend on the thickness of the resist pattern through which the implanted impurity ions pass. | 2012-08-02 |
| 20120196430 | STEPPED MASKING FOR PATTERNED IMPLANTATION - An improved method of moving a mask to perform a pattern implant of a substrate is disclosed. The mask has a plurality of apertures, and is placed between the ion source and the substrate. After the substrate is exposed to the ion beam, the mask is indexed to a new position relative to the substrate and a subsequent implant step is performed. Through the selection of the aperture size and shape, the index distance and the number of implant steps, a variety of implant patterns may be created. In some embodiments, the implant pattern includes heavily doped horizontal stripes with lighter doped regions between the stripes. In some embodiments, the implant pattern includes a grid of heavily doped regions. In other embodiments, the implant pattern is suitable for use with a bus-bar structure. | 2012-08-02 |
| 20120196431 | INSULATING FILM AND SEMICONDUCTOR DEVICE INCLUDING THE SAME - It is made possible to provide an insulating film that can reduce the leakage current. An insulating film includes: an amorphous oxide dielectric film containing a metal, hydrogen, and nitrogen. The nitrogen amount [N] and the hydrogen amount [H] in the oxide dielectric film satisfy the following relationship: {[N]—[H]}/2≦1.0×10 | 2012-08-02 |
