31st week of 2019 patent applcation highlights part 65 |
Patent application number | Title | Published |
20190237260 | Capacitor, Capacitive Voltage Sensor and Method for Manufacturing a Capacitor - A capacitor comprises an electrically conductive cylinder, an electrically conductive or semi-conductive cylindrical shell or shell segment arranged concentrically around the electrically conductive cylinder, and a dielectric arranged between the electrically conductive cylinder and the electrically conductive or semi-conductive cylindrical shell or shell segment. The dielectric comprises at least one dielectric layer having a positive thermal coefficient of relative permittivity, and at least one compensation dielectric layer having a negative thermal coefficient of relative permittivity. The thermal coefficient of relative permittivity is thereby selected such that the capacitance value of the capacitor is constant within a stability margin over a predefined temperature interval. | 2019-08-01 |
20190237261 | ELECTRONIC COMPONENT - An element body of a rectangular parallelepiped shape includes a first principal surface arranged to constitute a mounting surface, a second principal surface opposing the first principal surface in a first direction, a pair of side surfaces opposing each other in a second direction, and a pair of end surfaces opposing each other in a third direction. An external electrode is disposed on the element body. The external electrode includes a conductive resin layer. The conductive resin layer continuously covers one part of the first principal surface, one part of the end surface, and one part of each of the pair of side surfaces. A length of the conductive resin layer in the first direction is smaller than a length of the conductive resin layer in the third direction. | 2019-08-01 |
20190237262 | MULTILAYER CERAMIC CAPACITOR - A multilayer ceramic capacitor includes: a ceramic multilayer structure having a structure in which each of a plurality of ceramic dielectric layers and each of a plurality of internal electrode layers are alternately stacked and are alternately exposed to two edge faces of the ceramic multilayer structure; and a pair of external electrodes that are formed on the two edge faces, wherein when an average value of insulation resistances of each pair of the internal electrode adjacent to each other in a stacking direction is IR | 2019-08-01 |
20190237263 | CERAMIC CAPACITOR, CIRCUIT SUBSTRATE AND MANUFACTURING METHOD OF THE SAME - A ceramic capacitor includes: a multilayer structure in which each of a plurality of dielectric layers and each of a plurality of internal electrode layers are alternately stacked, wherein a main component of the plurality of dielectric layers is ceramic having a perovskite structure expressed by Ba | 2019-08-01 |
20190237264 | MULTILAYER CERAMIC CAPACITOR - The object of the present invention is to provide the multilayer ceramic capacitor having no deterioration of dielectric properties even in case an inhibitor of an internal electrode layer is pushed out to a dielectric layer when sintering. The multilayer ceramic capacitor | 2019-08-01 |
20190237265 | MICRO-ELECTRONIC ELECTRODE ASSEMBLY - A micro-electronic electrode assembly having a first electrode arranged on a substrate is provided, wherein the first electrode has a thin layer made of a first electrode material having a solid state lattice, wherein the first electrode material oxidizes upon contact with oxygen-containing compounds and has a perovskite or perovskite-derived crystal structure, and wherein the electrode has a functional surface facing away from the substrate, a separation layer is arranged on the functional surface of the electrode, which prevents an oxidation of the electrode material in the region of the functional surface, the oxidation changing the properties of the electrode. An electrically insulating functional layer is arranged on the separation layer and a second electrode is arranged on the electrically insulating functional layer. According to the invention, advantageously the first electrode material has one of the compounds SrMoO3, SrMoO3-aNa BaMoO3, SrVO3, Of Sr2MoO4, and the separation layer has one of the compounds SeTiO3, DyScO3, GdScO3 or SrHfO3. The functional layer is a compound with the molecular formula BaxSr1−xTi1±yO3+z, preferably Ba0.5Sr0.5TiO3. The electrode assembly forms a varactor. | 2019-08-01 |
20190237266 | SOLID ELECTROLYTIC CAPACITOR AND METHOD FOR MANUFACTURING SOLID ELECTROLYTIC CAPACITOR - A solid electrolytic capacitor that includes a capacitor device having a valve action metal substrate with a main surface, a first end surface orthogonal to the main surface and disposed in an electrode extended direction, a second end surface orthogonal to the main surface and opposite the first main surface, and a side surface orthogonal to the main surface and the first end surface, and a porous layer on the main surface, a dielectric layer on at least part of a surface of the porous layer, a solid electrolyte layer on the dielectric layer, an electric conductor layer on the solid electrolyte layer, and an insulating material directly covering one of the first and second end surfaces of the valve action metal substrate. | 2019-08-01 |
20190237267 | SOLAR CELL - Provided is a solar cell comprising a first electrode; a second electrode; a photoabsorber layer located between the first electrode and the second electrode; a first semiconductor layer located between the first electrode and the photoabsorber layer; and a second semiconductor layer located between the second electrode and the photoabsorber layer. At least one electrode selected from the group consisting of the first electrode and the second electrode is light-transmissive. The photoabsorber layer contains a perovskite compound represented by the composition formula AMX | 2019-08-01 |
20190237268 | DEFORMABLE ELECTRODES AND DEVICES FOR CONVERTING MECHANICAL ENERGY TO ELECTRICAL ENERGY - Deformable electrodes, deformable supercapacitors comprising the deformable electrodes, and electric circuits comprising the supercapacitors are provided. Methods of using the supercapacitors to convert mechanical energy to electrical energy are also provided. The supercapacitors include a liquid electrolyte disposed between two electrodes, at least one of which is reversibly deformable when it is compressed. The liquid electrolyte is infused into the deformable electrode and the supercapacitors are characterized in that the deformation of the deformable electrodes causes the interfacial area between the electrolyte and the deformable electrode to decrease when the electrode is deformed. | 2019-08-01 |
20190237269 | FLEXIBLE SUPERCAPACITORS AND DEVICES CONTAINING THE SAME - Disclosed herein are stretchable strain sensors that include a graphite network embedded within an elastomeric material. The sensors are wearable and can be used to detect mechanical movements in three dimensions in a wide variety of contexts. | 2019-08-01 |
20190237270 | ADDITIVE MATERIAL FOR AN ELECTRODE OF AN ELECTROCHEMICAL CELL, DOUBLE LAYER CAPACITOR AND PRODUCTION METHOD FOR SUCH AN ELECTRODE - Additive material for an electrode of an electrochemical cell, double-layer capacitor and production method for such an electrode. Known additive materials for an electrode of an electrochemical cell contain electrically conductive particles composed of carbon, such as e.g. conductive carbon blacks or graphites. To provide an additive material having comparatively high ionic conductivity starting therefrom, it is proposed that the carbon additive particles have an average particle diameter in the range of 1 to 20 μm and contain mesopores and macropores which form a three-dimensionally interconnected pore structure. | 2019-08-01 |
20190237271 | ENERGY STORAGE DEVICE MODULE - An energy storage device module comprises: a plurality of energy storage devices having a first energy storage device and a second energy storage device; a connection member configured to connect a first external terminal of the first energy storage device and a second external terminal of the second energy storage device adjacent to the first energy storage device; and a circuit board including a hole that passes through the first external terminal of the first energy storage device, a board protrusion supported by a curling processed portion formed in a body case of the first energy storage device, a first conductive metal layer formed in a region adjacent to the hole and in contact with the connection member, and a second conductive metal layer formed in a region of the board protrusion and in contact with the curling processed portion. | 2019-08-01 |
20190237272 | ELECTRODE STACKING DEVICE - An electrode stacking device is an electrode stacking device for stacking electrodes supplied by a conveying device and forming an electrode stacked body, including an electrode support that receives the electrodes supplied by the conveying device and supports the electrodes, a mounting member to which a plurality of electrode supports is attached, a stacked unit having stacked portions of a plurality of levels on which the electrodes are stacked, and a discharge portion that discharges the electrodes supported by the plurality of electrode supports toward the stacked portions of the plurality of levels, in which the discharge portion discharges the electrodes at one interval with respect to the electrode supports per n levels (where n is an integer of 2 or more). | 2019-08-01 |
20190237273 | ELECTRONIC DEVICE - An electronic device is provided, which includes a substrate, a protruding pattern, a first conductive pattern, an insulating layer, and a second conductive pattern. The protruding pattern is disposed on the substrate. The first conductive pattern is disposed on the substrate and covers the protruding pattern. The insulating layer is disposed on the first conductive pattern. The insulating layer includes an opening overlapping at least a portion of the protruding pattern. The second conductive pattern is disposed on the insulating layer. The second conductive pattern is connected to the first conductive pattern through the opening. | 2019-08-01 |
20190237274 | Motor Device For A Switch Drive Of An Electric Switch - A motor assembly for a switch drive of an electric switch. The motor assembly has a brushless three-phase motor and an electronic control device for controlling the three-phase motor. The control device has a rectifier unit for rectifying a supply voltage of the motor assembly if the supply voltage is an AC voltage, and for reverse polarity protection if the supply voltage is a DC voltage. The control device also has a voltage measuring unit for detecting a rectifier output voltage of the rectifier unit, a switch unit for generating a pulse width-modulated drive AC voltage for the three-phase motor from the rectifier output voltage, and a control unit for actuating the switch unit according to the rectifier output voltage. | 2019-08-01 |
20190237275 | SINGLE PHASE UNDERGROUND FUSED TAP - A fused tap for an elbow connector that properly insulates and houses an interruption device or fuse to provide protection on underground distribution power lines. The interruption device is replaceable without the need of replacing the entire assembly. The fused tap provides flexibility in installation for existing and new underground distribution lines and/or feeders. | 2019-08-01 |
20190237276 | TWO TERMINAL ARC SUPPRESSOR - A two terminal arc suppressor for protecting switch, relay or contactor contacts and the like comprises a two terminal module adapted to be attached in parallel with the contacts to be protected and including a circuit for deriving an operating voltage upon the transitioning of the switch, relay or contactor contacts from a closed to an open disposition, the power being rectified and the resulting DC signal used to trigger a power triac switch via an optoisolator circuit whereby arc suppression pulses are generated for short predetermined intervals only at a transition of the mechanical switch, relay or contactor contacts from an closed to an open transition and, again, at an open to a close transition during contact bounce conditions. | 2019-08-01 |
20190237277 | EMERGENCY STOP DEVICE - The invention relates to an emergency stop device, comprising:
| 2019-08-01 |
20190237278 | KEY SWITCH STRUCTURE AND ASSEMBLING METHOD THEREOF - A key switch structure and an assembling method thereof are provided. The key switch structure includes a bottom plate, a keycap, a supporting assembly, first connectors, and second connectors. The keycap is disposed on the bottom plate. The supporting assembly is disposed between the bottom plate and the keycap. The first connectors disposed on the bottom plate are integrally formed and directly bonded to the upper surface of the bottom plate, wherein the first connectors and the bottom plate are made of different materials. The second connectors are disposed on the keycap. The supporting assembly is connected to the bottom plate and the keycap through the first connectors and the second connectors. | 2019-08-01 |
20190237279 | CAP STRUCTURE AND KEYSWITCH THEREOF - A cap structure is combined with a lifting mechanism to be movable between a pressed position and a non-pressed position. The cap structure includes a first circuit, a second circuit, a flexible circuit board and a cap having a top surface, a bottom surface and an engaging structure. The engaging structure protrudes from the bottom surface for engaging with the lifting mechanism. The first circuit is laid out on the top surface for connecting to a sensing device or a display device attached on the top surface. The second circuit is laid out on the bottom surface and avoids the engaging structure. The second circuit passes through the cap to be connected to the first circuit. The flexible circuit board is connected to the second circuit for performing signal transmission of the sensing device or the display device via the first and second circuits. | 2019-08-01 |
20190237280 | ROTARY ENCODER - A rotary encoder includes a shaft and an encoder mechanism that holds the shaft in a rotatably inserted state and detects a rotation direction and a rotation angle of the shaft. The encoder mechanism includes a substrate that rotatably holds the shaft, an insulator portion and a resistor portion provided on one surface of the substrate and alternately provided in the rotation direction of the shaft, a rotor attached to the shaft so as to be integrally rotatable with the shaft, and a slider that is attached to the rotor and alternately slidably contacts the insulator portion and the resistor portion by rotation of the shaft. The insulator portion includes a base material made of a resin, spherical silica, and a fluororesin filler. | 2019-08-01 |
20190237281 | Switching Device Arrangement - A switching device arrangement has an encapsulation housing and also a drive device. The drive device is supported on the encapsulation housing. The drive device is arranged at a distance from the encapsulation housing via a spacer device. A receiving space is delimited by the spacer device. | 2019-08-01 |
20190237282 | ELECTRONIC DEVICE WITH ROTATABLE SWITCH - An electronic device comprising a lens and a selector ring is disclosed. The selector ring is mounted for rotation about the lens and comprises a plurality of tabs projecting inwards towards the lens which engaging with and are held within a tab receiving groove comprising a plurality of spaced notches. Each of the notches is dimensioned to receive one of said tabs. A wave spring positioned between an annular ledge of the lens and the selector ring which biases the plurality of tabs against the groove and such that when each of the plurality of tabs is positioned adjacent a respective one of the notches, the tabs are biased into the notches thereby preventing said selector ring from being rotated. A user disengages the tabs from the notches by pressing said selector ring against the bias of the wave spring, thereby allowing the selector ring to be rotated. | 2019-08-01 |
20190237283 | MICRO-GRID ADAPTIVE RELAYING - A system and method for changing protection settings groups for relays in a micro-grid between a grid-connected settings group and an islanded settings group. The method changes a power source relay from the grid-connected settings group to the islanded settings group before the micro-grid is disconnected from the utility grid, disconnects the micro-grid from the utility grid, and then changes a load relay from the grid-connected settings group to the islanded settings group after the micro-grid is disconnected from the utility grid. The method also changes the load relay from the islanded settings group to the grid-connected settings group before the micro-grid is connected to the utility grid, connects the micro-grid to the utility grid, and then changes the power source relay from the islanded settings group to the grid-connected settings group after the micro-grid is connected to the utility grid. | 2019-08-01 |
20190237284 | Fuses, and Methods of Forming and Using Fuses - Some embodiments include a fuse having a tungsten-containing structure directly contacting an electrically conductive structure. The electrically conductive structure may be a titanium-containing structure. An interface between the tungsten-containing structure and the electrically conductive structure is configured to rupture when current through the interface exceeds a predetermined level. Some embodiments include a method of forming and using a fuse. The fuse is formed to have a tungsten-containing structure directly contacting an electrically conductive structure. An interface between the tungsten-containing structure and the electrically conductive structure is configured to rupture when current through the interface exceeds a predetermined level. Current exceeding the predetermined level is passed through the interface to rupture the interface. | 2019-08-01 |
20190237285 | X-RAY ARRANGEMENT WITH STATOR OPTIMIZED FOR MINIMAL FOCAL SPOT MOVEMENT - An X-ray arrangement includes a vacuum vessel, a rotating anode and a rotor of an electrical machine being non-rotatably interconnected rotatably mounted in the vacuum vessel, a stator being disposed in a region of the rotor, externally enclosing the vacuum vessel. The stator includes a laminated core which, viewed orthogonally to the axis of rotation, includes a yoke running around the axis of rotation and from which stator teeth extend onto the axis of rotation. A winding system is disposed in spaces between the stator teeth of the laminated stator core. The winding system includes windings, individual turns of the windings each being configured to respectively engage over a plurality of the stator teeth, and the stator being designed such that when identical phase voltages are applied to the individual phases of the winding system, the individual phases are each respectively configured to produce stray magnetic fields of identical magnitude. | 2019-08-01 |
20190237286 | X-RAY TUBE HAVING PLANAR EMITTER AND MAGNETIC FOCUSING AND STEERING COMPONENTS - An X-ray tube can include: a cathode including an electron emitter that emits an electron beam; an anode configured to receive the emitted electrons of the electron beam; a first magnetic quadrupole between the cathode and the anode; a second magnetic quadrupole between the first magnetic quadrupole and the anode; a magnetic dipole between the cathode and anode; and a power supply system operably coupled with the first magnetic quadrupole, second magnetic quadrupole, and magnetic dipole, the power supply system being configured to: produce a first focusing magnetic quadrupole field at the first magnetic quadrupole; produce a second focusing magnetic quadrupole field at the second magnetic quadrupole; and produce a steering magnetic dipole field at the magnetic dipole configured to deflect the electron beam in order to shift a focal spot of the electron beam on the anode. | 2019-08-01 |
20190237287 | X-RAY TUBE - Provided is an X-ray tube capable of obtaining a clear X-ray image by reducing unnecessary X-rays radiated from a holder shaft. The X-ray tube includes an electron source | 2019-08-01 |
20190237288 | Charged-Particle Source and Method for Cleaning a Charged-Particle Source Using Back-Sputtering - A charged-particle source for emission of electrons or other electrically charged particles comprises, located between the emitter electrode having an emitter surface and a counter electrode, at least two adjustment electrodes; a pressure regulator device is configured to control the gas pressure in the source space at a pre-defined pressure value. In a first cleaning mode of the particle source, applying a voltage between the emitter and counter electrodes directs gas particles towards the counter electrode, generating secondary electrons which ionize particles of the gas in the source space, and electrostatic potentials are applied to at least some of the adjustment electrodes, generating an electric field directing the ionized gas particles onto the emitter surface. | 2019-08-01 |
20190237289 | Electron Beam Apparatus - An electron beam apparatus which can stably achieve high spatial resolution also during low acceleration observation using CeB | 2019-08-01 |
20190237290 | ION SOURCE AND ION IMPLANTATION APPARATUS - An ion source having an ion generation container configured to generate ions by reacting ionized gas introduced into the container via a tubular gas introduction pipe with an ion source material emitted in the container. The gas introduction pipe is configured to introduce the ionized gas into an inner space of the gas introduction pipe via a gas supply pipe. In the inner space of the gas introduction pipe, a detachable cooling trap member is disposed and includes a cooling trap portion configured to cool and trap a byproduct produced in the ion generation container. The cooling trap portion is disposed near a supply-side leading end of the gas supply pipe in the inner space of the gas introduction pipe and is not contact with an interior wall face of the gas introduction pipe. | 2019-08-01 |
20190237291 | ION MILLING DEVICE, lON SOURCE, AND ION MILLING METHOD - To provide an ion gun of a penning discharge type capable of achieving a milling rate which is remarkably higher than that in the related art, an ion milling device including the same, and an ion milling method. | 2019-08-01 |
20190237292 | ION BEAM APPARATUS INCLUDING SLIT STRUCTURE FOR EXTRACTING ION BEAM - An ion beam apparatus includes a source part generating plasma therein, a process part in which a process using an ion beam is performed, and a slit structure provided between the source part and the process part and extracting the ion beam from the plasma. The slit structure includes at least one electrode structure. The electrode structure has a slit penetrating the electrode structure and extending in a first direction. The ion beam is irradiated onto a substrate at an incident angle through the slit. The incident angle of the ion beam is adjusted by rotating the electrode structure on a rotation axis parallel to the first direction. | 2019-08-01 |
20190237293 | DEFLECTION SENSITIVITY CALCULATION METHOD AND DEFLECTION SENSITIVITY CALCULATION SYSTEM - According to one embodiment, provided is a deflection sensitivity calculation method for calculating deflection sensitivity of a deflector in an electron beam irradiation apparatus that irradiates an irradiation object on a stage with an electron beam by causing the deflector to deflect the electron beam, the deflection sensitivity calculation method including: irradiating an area that covers an adjustment plate with an electron beam by scanning a deflection parameter that controls deflection of the deflector in a predetermined width; detecting a current value detected from the adjustment plate; forming an image corresponding to the detected current value, a number of pixels of the image being known; calculating the number of pixels of a portion corresponding to the adjustment plate in the formed image; and calculating the deflection sensitivity of the deflector. | 2019-08-01 |
20190237294 | TRANSMISSION ELECTRON MICROSCOPE MICRO-GRID AND METHOD FOR MAKING THE SAME - The present invention relates to a transmission electron microscope (TEM) micro-grid and a method for preparing the TEM micro-grid. The TEM micro-grid comprises a porous silicon nitride substrate and a graphene layer located on a surface of the porous silicon nitride substrate. The porous silicon nitride substrate comprises a plurality of through holes. The graphene layer covers the plurality of through holes. The method for preparing the TEM micro-grid provided in the present disclosure uses a carbon nanotube film structure to transfer a graphene layer to a surface of a porous silicon nitride substrate. | 2019-08-01 |
20190237295 | Transmission Electron Microscope Sample Holder - Embodiments of the invention provide for an electron microscope sample holder, which includes a membrane, a support frame partially surrounding a perimeter or circumference of the membrane, a mounting area for mounting a sample to the membrane, where the mounting area abuts a perimeter or circumference of the membrane not surrounded by the support frame, at least two of conducting contact pads mounted on a the support frame, and at least one electrode lead mounted on the membrane and in electric contact with at least one conducting contact pad. | 2019-08-01 |
20190237296 | DEFECT OBSERVATION DEVICE - A defect observation device detects a defect with high accuracy regardless of a defect size. One imaging configuration for observing an observation target on a sample is selected from an optical microscope, an optical microscope, and an electron microscope, and an imaging condition of the selected imaging configuration is controlled. | 2019-08-01 |
20190237297 | CHARGED PARTICLE BEAM WRITING METHOD AND CHARGED PARTICLE BEAM WRITING APPARATUS - A charged particle beam writing method includes acquiring the deviation amount of the deflection position per unit tracking deflection amount with respect to each tracking coefficient of a plurality of tracking coefficients having been set for adjusting the tracking amount to shift the deflection position of a charged particle beam on the writing target substrate in order to follow movement of the stage on which the writing target substrate is placed, extracting a tracking coefficient based on which the deviation amount of the deflection position per the unit tracking deflection amount is closest to zero among the plurality of tracking coefficients, and writing a pattern on the writing target substrate with the charged particle beam while performing tracking control in which the tracking amount has been adjusted using the tracking coefficient extracted. | 2019-08-01 |
20190237298 | ION BEAM ETCH WITHOUT NEED FOR WAFER TILT OR ROTATION - Various embodiments herein relate to methods and apparatus for etching feature on a substrate. In a number of embodiments, no substrate rotation or tilting is used. While conventional etching processes rely on substrate rotation to even out the distribution of ions over the substrate surface, various embodiments herein achieve this purpose by moving the ion beams relative to the ion source. Movement of the ion beams can be achieved in a number of ways including electrostatic techniques, mechanical techniques, magnetic techniques, and combinations thereof. | 2019-08-01 |
20190237299 | METHOD AND SYSTEM FOR FORMING A PATTERN ON A SURFACE USING MULTI-BEAM CHARGED PARTICLE BEAM LITHOGRAPHY - A method for fracturing or mask data preparation is disclosed in which a plurality of single-beam charged particle beam shots is used to create a plurality of multi-beam shots, where multi-beam exposure information is determined for each of the single-beam shots, and then the resulting multi-beam exposure information is used to generate a set of multi-beam shots. Additionally, a method for fracturing or mask data preparation is disclosed in which a plurality of single-beam shots is used to generate a set of multi-beam shots by calculating an image which the single-beam shots would form on a surface. | 2019-08-01 |
20190237300 | PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD - In a plasma processing apparatus, a placement electrode includes an inner peripheral electrode for electrostatically adsorbing a wafer and an outer peripheral electrode disposed outside the inner peripheral electrode for electrostatically adsorbing the wafer, and a DC power supply unit on which the wafer is placed supplies a first radio frequency power to the inner peripheral electrode via an inner peripheral transmission path. A DC power supply unit supplies a second radio frequency power having the same frequency as the frequency of the first radio frequency power to the outer peripheral electrode via an outer peripheral transmission path. An electromagnetic wave generating power supply supplies a third radio frequency power for generating plasma. A control device controls a phase difference between a phase of the first radio frequency power and a phase of the second radio frequency power so that a phase of a radio frequency voltage applied to the inner peripheral electrode and a phase of a radio frequency voltage applied to the outer peripheral electrode are equal. | 2019-08-01 |
20190237301 | ENERGY-EFFICIENT PLASMA PROCESSES OF GENERATING FREE CHARGES, OZONE, AND LIGHT - Embodiments of the present invention describe the formation of a current source, a light source, and an ozone generator by using a coated double dielectric barrier discharge system (CDDBD). A system for generating charge may include a CDDBD having at least two electrodes that are separated by a gap filled with a gas medium, wherein each of the at least two electrodes are covered with an insulator that prevents charges in the at least two electrodes from passing through the gas medium, and wherein surfaces of each of the at least two insulators are coated with a material having a secondary electron emission coefficient higher than a material of the insulator. Furthermore, the system for generating the charge may also include a power supply coupled with the CDDBD device that supplies energy to the CDDBD device to form an initial electric field. | 2019-08-01 |
20190237302 | VACUUM PROCESSING APPARATUS - In a vacuum processing apparatus including: a vacuum container including a processing chamber therein; a plasma formation chamber; plate members being arranged between the processing chamber and the plasma formation chamber; and a lamp and a window member being arranged around the plate members, in order that a wafer and the plate members are heated by electromagnetic waves from the lamp, a bottom surface and a side surface of the window member is formed of a member transmitting the electromagnetic waves therethrough. | 2019-08-01 |
20190237303 | TARGET SUPPLY DEVICE, TARGET MATERIAL REFINING METHOD, RECORDING MEDIUM HAVING TARGET MATERIAL REFINING PROGRAM RECORDED THEREIN, AND TARGET GENERATOR - A target supply device may be provided with a tank configured to contain a metal as a target material, a nozzle having a nozzle hole through which the target material is output from the tank, a filter disposed in a communication portion for conducting the target material from the tank to the nozzle hole, a temperature adjuster configured to change the temperature of the target material in the tank, and a controller controlling the temperature adjuster to change the temperature of the target material in the tank such that oxygen in the target material is precipitated as metal oxide. | 2019-08-01 |
20190237304 | ALUMINUM APPARATUS WITH ALUMINUM OXIDE LAYER AND METHOD FOR FORMING THE SAME - In a method, an aluminum body is chemically treated with at least one of an alkaline solution and an acid solution. Anode-oxidization is performed on the chemically treated aluminum body to form an aluminum oxide layer. The aluminum oxide layer is treated with hot water at a temperature more than 75 ° C. or steam. The aluminum oxide layer after being treated with hot water or steam includes plural columnar grains, and an average width of the columnar grains is in a range from 10 nm to 100 nm. | 2019-08-01 |
20190237305 | METHOD FOR APPLYING DC VOLTAGE AND PLASMA PROCESSING APPARATUS - In a method for applying a DC voltage to an electrode of a plasma processing apparatus, plasma of a gas is generated in an inner space of a chamber and an absolute value of a negative DC voltage applied from a DC power supply to the electrode that forms a part of the chamber or is provided in the inner space during the generation of the plasma is increased. A first voltage value is specified, the first voltage value being a voltage value measured at the electrode when a current starts to flow in the electrode during the increase of the absolute value of the negative DC voltage. A value of the DC voltage applied from the DC power supply to the electrode during the generation of the plasma is set to a second voltage value that is a sum of the first voltage value and a specified value. | 2019-08-01 |
20190237306 | ELECTRICAL TRANSFER IN AN ENDBLOCK FOR A SPUTTER DEVICE - A power transfer system is described for transfer of electrical power to a sputter target in a sputter device. It comprises a first part comprising a contact surface positionable against a first part of an endblock of the sputter device, a second part inseparably connected to the first part and a third part, and a third part comprising a contact surface positionable against a second part of the endblock or directly against a sputter target when mounted on the endblock. At least two of the three parts are formed as one monolithic piece. One of the parts of the power transfer system is resilient such that, when mounted, the power transfer system is clamped between the first part of the endblock and the second part of the endblock or the sputter target. This part is also responsible for the transfer of electrical power. | 2019-08-01 |
20190237307 | SUPPORT TABLE, SUBSTRATE PROCESSING APPARATUS, SUBSTRATE PROCESSING SYSTEM, AND SUPPORT MANUFACTURING METHOD - A support table according to an embodiment includes a base and a support. The support is provided on the base. The support has a main body and a conductive film. The main body is formed of a dielectric material. The body has a surface region and a rear surface. The surface region is a region that is in contact with a rear surface of the substrate placed on the support. The rear surface is a surface opposite to the surface region. The rear surface of the support is bonded to the base. The conductive film is spaced apart from the surface region, and has an undulation. The surface region extends along the conductive film. | 2019-08-01 |
20190237308 | NON-CONTACT PHYSICAL ETCHING SYSTEM - Disclosures of the present invention describe a non-contact physical etching system, which consists of a main body, a separation member, a hollow chamber, a working gas supplying device, a plasma generating device, a first mask, and a target holder. Particularly, this non-contact physical etching system can be used for executing a direct physical etching process to a target put on the target holder, without treating the target with any photolithography processes in advance. Therefore, since this non-contact physical etching system is able to complete target etching by purely-physical way, it is extrapolated that the non-contact physical etching system can also be used for applying etching process to biomartials, medical substrates (for example, blood glucose test strip), and organic materials. | 2019-08-01 |
20190237309 | PLASMA PROCESSING APPARATUS AND PREDICTION APPARATUS OF THE CONDITION OF PLASMA PROCESSING APPARATUS - A plasma processing apparatus including a state prediction apparatus that predicts an apparatus state of the plasma processing apparatus configured to include an apparatus data recording unit that records apparatus data output from the plasma processing apparatus during the processing of the sample, a physical environment measurement data recording unit that measures physical environment in the processing chamber and records apparatus physical environment data, data correction unit that extracts a temporal change component of the physical environment from a plurality of the apparatus physical environment data recorded in the physical environment measurement data recording unit and extracts the temporal change component of the physical environment from the apparatus data to remove the temporal change components, and an apparatus state prediction calculation unit that predicts the state of the plasma processing apparatus using the apparatus data from which the temporal change component of the physical environment is removed as input data. | 2019-08-01 |
20190237310 | DAMAGE PREDICTION METHOD, PROGRAM, AND SEMICONDUCTOR PROCESSING SYSTEM - [Object] To predict the damage distribution of a workpiece caused by ions and light from plasma more accurately within a practical computation time. [Solution] Provided is a damage prediction method including: using an operation apparatus to calculate, from fluxes of ions and light generated by plasma, fluxes of ions and light propagated through a pattern of a workpiece including a processing object, on the basis of the pattern; calculating, from the fluxes of ions and light propagated through the pattern, fluxes of ions and light arriving at a surface of the processing object, by ray tracing; and calculating, from the fluxes of ions and light arriving at the surface of the processing object, a damage distribution of the processing object. | 2019-08-01 |
20190237311 | PROCESS KIT GEOMETRY FOR PARTICLE REDUCTION IN PVD PROCESSES - A process kit comprises a shield and ring assembly for positioning about a substrate support in a processing chamber to reduce deposition of process deposits on internal chamber components and an overhang edge of the substrate. The shield comprises a cylindrical band having a top wall configured to surround a sputtering target and a sloped portion of a bottom wall having a substantially straight profile with gas conductance holes configured to surround the substrate support. The ring assembly comprises a cover ring having a bulb-shaped protuberance about the periphery of the ring. The bulb-shaped protuberance of the cover ring is able to block a line-of-sight between the gas conductance holes on the shield and an entrance to a chamber body cavity in the processing chamber. | 2019-08-01 |
20190237312 | REDUCING CALIBRATION OF COMPONENTS IN AN IMAGING PLATE SCANNER - A photomultiplier tube for use in an imaging plate scanner. In one embodiment, the photomultiplier tube includes a housing having a window; a focusing electrode located in the housing; an electron multiplier dynode located in the housing; an anode; a cathode and a memory storing parameters. Another embodiment provides An imaging plate scanner including a photomultiplier tube having a window, an anode, and a cathode; a light source positioned to radiate light on the anode or cathode; and an electronic processor communicatively coupled to the light source and configured to generate a supply voltage value for the photomultiplier tube, activate the light source and determine an output current of the anode or of the cathode, and generate an error message if the output current deviates from an expected current range. A power supply is electrically connected to the electronic processor and configured to generate the supply voltage. | 2019-08-01 |
20190237313 | Thermionic Energy Conversion with Resupply of Hydrogen - There is a need to produce electric power by means that provide low pollution and high efficiency. Thermionic energy conversion (TEC) systems enable the direct conversion of energy from thermal to electric, based on the emission of electrons from a heated cathode, Diamond is an ideal material for the cathode because of its high temperature mechanical stability, its ability to be created with low resistivity, and its strong tendency to emit electrons. The efficiency of current TEC systems is not practical, as above approximately 700° C. the current produced decreases. The presence of hydrogen at the electron-emitting surface is required to enhance thermionic emission. The present invention provides a resupply of hydrogen to the emitting surface by diffusion of hydrogen through the diamond cathode, and enables efficient operation of TEC systems at temperatures well above the current limit; practical systems for direct conversion of heat to electricity are thus enabled, | 2019-08-01 |
20190237314 | NOVEL METHODS OF EVALUATING PERFORMANCE OF AN ATMOSPHERIC PRESSURE IONIZATION SYSTEM - The present invention comprises novel methods of continuously monitoring the performance of an atmospheric pressure ionization (API) system. The methods of the invention allow for improved quality monitoring of the processes that leads to the formation of ions at atmospheric pressure. The methods of the invention further allow for continuously monitoring for the quality of the ion formation process in API without the addition of extraneous material (such as labelled compounds or control known compounds) to the system being monitored. | 2019-08-01 |
20190237315 | ZERO VOLTAGE MASS SPECTROMETRY PROBES AND SYSTEMS - The invention generally relates to zero volt mass spectrometry probes and systems. In certain embodiments, the invention provides a system including a mass spectrometry probe including a porous material, and a mass spectrometer (bench-top or miniature mass spectrometer). The system operates without an application of voltage to the probe. In certain embodiments, the probe is oriented such that a distal end faces an inlet of the mass spectrometer. In other embodiments, the distal end of the probe is 5 mm or less from an inlet of the mass spectrometer. | 2019-08-01 |
20190237316 | APPARATUS AND METHOD FOR ANALYSING A CHEMICAL COMPOSITION OF AEROSOL PARTICLES - The invention relates to an apparatus and a method for analysing a chemical composition of aerosol particles. The apparatus comprises an extractive electrospray ionisation source for extracting components, in particular organic compounds, from the aerosol particles and for ionising the components to ions, and a mass analyser, in particular a time of flight mass analyser, for analysing the ions, the mass analyser fluidly coupled to the extractive electrospray ionisation source. The method includes the steps of extracting components, in particular organic compounds, from the aerosol particles with an extractive electrospray ionisation source and ionising the components with the extractive electrospray ionisation source to ions, transferring the ions to a mass analyser, in particular a time of flight mass analyser, the mass analyser being fluidly coupled to the extractive electrospray ionisation source, and analysing the ions with the mass analyser. | 2019-08-01 |
20190237317 | ION GUIDE - An ion guide comprises a first ion guide portion that forms a first ion guiding path and a second ion guide portion that forms a second ion guiding path. A first device applies a plurality of different first voltages or potentials to the electrodes of the first ion guide portion in order to generate an electric field that directs ions from the first ion guiding path of the first ion guide portion into the second ion guiding path of the second ion guide portion. The use of plural different first voltages can provide a controlled transfer of ions from the first ion guiding path into the second ion guiding path. | 2019-08-01 |
20190237318 | DUAL MODE MASS SPECTROMETER - Disclosed herein is an ion analysis instrument comprising a Time of Flight (“TOF”) mass analyser comprising a reflectron. The instrument is operable in at least a first mode and a second mode, wherein in said first mode ions are caused to turn around at a first point in the reflectron and wherein in said second mode ions are caused to turn around at a second point in the reflectron such that the distance traveled by ions within the Time of Flight mass analyser is greater in the second mode than the distance traveled by ions within the Time of Flight mass analyser in the first mode. In this way, the operating modes can be selectively optimised for the analysis of ions of different masses. | 2019-08-01 |
20190237319 | ION SEPARATOR - A method of separating ions is disclosed comprising: providing an ion separation device comprising a plurality of electrodes; providing a gas flow ( | 2019-08-01 |
20190237320 | Sulfur Plasma Lamp - A sulfur plasma lamp has a lamp envelope of transparent or translucent glass or ceramic material. At least two silicon carbide electrodes are hermetically sealed with the lamp envelope and in contact with an interior of the lamp envelope. A quantity of sulfur within the interior of the lamp envelope is sufficient to create a sulfur plasma upon excitation. A buffer gas within the interior of the lamp envelope enables initial discharge and heating of the interior of the lamp envelope to excite the sulfur into a plasma state. More than two electrodes may be provided, and an electrical potential is created between different pairs of the electrodes at different times, thereby inducing stirring of the plasma upon excitation of the material into a plasma state. | 2019-08-01 |
20190237321 | METHOD OF WAFER RECYCLING - Methods are provided for recycling a dummy wafer so that the dummy wafer may be repeatedly used in a deposition process. The dummy wafer includes a substrate and an oxide layer on the substrate that is formed by the deposition process. A thickness of the oxide layer on the dummy wafer may be measured, and the dummy wafer may be subjected to recycling depending on whether the measured thickness of the oxide layer exceeds a threshold thickness. The dummy wafer is recycled by removing the oxide layer, which may be accomplished by performing an etching process. A mechanical polishing process may be performed to smooth the surface of the substrate. The dummy wafer may then be reused in a subsequent deposition process. | 2019-08-01 |
20190237322 | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS - A substrate processing method includes a liquid film forming step of forming a liquid film of the processing liquid on the upper surface of the substrate; a liquid filling heating step of supplying a heating medium to a space between a heater unit and the substrate to thereby fill the space with the heating medium, and heating the heating medium by the heater unit, an opening defining step of defining an opening in the central region of the liquid film in a state where the substrate is heated in the liquid filling heating step such that the temperature of the substrate is the boiling point of the processing liquid or higher, and an opening enlarging step of enlarging the opening while rotating the base to thereby rotate the substrate. The liquid filling heating step is executed in parallel with the opening enlarging step at least during part of a period of the opening enlarging step. | 2019-08-01 |
20190237323 | CRYSTAL GROWTH METHOD AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A crystal growth method of the present disclosure includes: preparing a substrate having a surface layer; forming a mask pattern including a plurality of strip bodies on the surface layer to separate the surface layer into segments by the plurality of strip bodies and expose part of the surface layer; and forming, on a plurality of growth regions constituted by the exposed part of the surface layer, a crystal growth-derived layer by causing a semiconductor crystal which differs in lattice constant from the substrate to grow by a vapor-phase growth process. Each of the plurality of strip bodies has side faces inclined so that a width between the side faces gradually decreases with distance from the surface layer. | 2019-08-01 |
20190237324 | SEMICONDUCTOR DEVICE MANUFACTURING METHOD - A semiconductor device manufacturing method according to the present disclosure includes: preparing a substrate having a surface layer at least made of semiconductor; forming a mask pattern having a plurality of openings on the surface layer using materials free of semiconductor vapor-phase growth; forming a brittle portion in each opening by a vapor-phase growth process; forming crystal growth-derived layer on the mask pattern by a vapor-phase growth process by growth of semiconductor crystals on a surface of the brittle portion ; and separating, at brittle portion, a crystal growth-derived layer from substrate. | 2019-08-01 |
20190237325 | CARBON FILM GAPFILL FOR PATTERNING APPLICATION - Embodiments described herein relate to methods for forming patterns of semiconductor devices utilizing parylene gapfill layers deposited using a thermal chemical vapor deposition (CVD) process. In one embodiment the patterns of semiconductor devices are formed by forming amorphous carbon (a-C) mandrels on first layers, depositing amorphous silicon (a-Si) layers over the a-C mandrels and the first layers, etching the a-Si spacer layers to expose top surfaces of the a-C mandrels and to expose the first layers, depositing parylene gapfill layers using the CVD process, removing portions of the parylene gapfill layers until the top surfaces are exposed; and removing the a-Si spacer layers to expose the first layers and form patterns of semiconductor devices having a-C mandrels and parylene mandrels. | 2019-08-01 |
20190237326 | SELECTIVE FILM FORMING METHOD AND FILM FORMING APPARATUS - There is provided a selective film forming method, comprising a first step of preparing a work piece having a plurality of recesses; a second step of forming a boron-based film having a first predetermined film thickness in a portion of the work piece other than the recesses by plasma CVD; and a third step of etching a side surface of the formed boron-based film having the first predetermined film thickness, wherein the boron-based film is formed in the portion of the work piece other than the recesses in a self-aligned and selective manner. | 2019-08-01 |
20190237327 | METHOD FOR DEPOSITING A SEMICONDUCTOR STRUCTURE ON A SURFACE OF A SUBSTRATE AND RELATED SEMICONDUCTOR STRUCTURES - A method for depositing a semiconductor structure on a surface of a substrate is disclosed. The method may include: depositing a first group IVA semiconductor layer over a surface of the substrate; contacting an exposed surface of the first group IVA semiconductor layer with a first gas comprising a first chloride gas; and depositing a second group IVA semiconductor layer over a surface of the first group IVA semiconductor layer. Related semiconductor structures are also disclosed. | 2019-08-01 |
20190237328 | METHOD OF FORMING A SEMICONDUCTOR DEVICE USING LAYERED ETCHING AND REPAIRING OF DAMAGED PORTIONS - A method of fabricating a semiconductor device includes plasma etching a portion of a plurality of metal dichalcogenide films comprising a compound of a metal and a chalcogen disposed on a substrate by applying a plasma to the plurality of metal dichalcogenide films. After plasma etching, a chalcogen is applied to remaining portions of the plurality of metal dichalcogenide films to repair damage to the remaining portions of the plurality of metal dichalcogenide films from the plasma etching. The chalcogen is S, Se, or Te. | 2019-08-01 |
20190237329 | METAL OXIDE NANOPARTICLES AS FILLABLE HARDMASK MATERIALS - A dielectric composition including a metal oxide particle including a diameter of 5 nanometers or less capped with an organic ligand at at least a 1:1 ratio. A method including synthesizing metal oxide particles including a diameter of 5 nanometers or less; and capping the metal oxide particles with an organic ligand at at least a 1:1 ratio. A method including forming an interconnect layer on a semiconductor substrate; forming a first hardmask material and a different second hardmask material on the interconnect layer, wherein at least one of the first hardmask material and the second hardmask material is formed over an area of interconnect layer target for a via landing and at least one of the first hardmask material and the second hardmask material include metal oxide nanoparticles; and forming an opening to the interconnect layer selectively through one of the first hardmask material and the second hardmask material. | 2019-08-01 |
20190237330 | SPACER PROFILE CONTROL USING ATOMIC LAYER DEPOSITION IN A MULTIPLE PATTERNING PROCESS - Methods and apparatuses for spacer profile control using atomic layer deposition (ALD) in multi-patterning processes are described herein. A silicon oxide spacer is deposited over a patterned core material and a target layer of a substrate in a multi-patterning scheme. A first thickness of the silicon oxide spacer is deposited by multiple ALD cycles under a first oxidation condition that includes an oxidation time, a plasma power, and a substrate temperature. A second thickness of the silicon oxide spacer is deposited by multiple ALD cycles under a second oxidation condition, where the second oxidation condition is different than the first oxidation condition by one or more parameters. After etching the patterned core material, a resulting profile of the silicon oxide spacer is dependent at least in part on the first and second oxidation conditions. | 2019-08-01 |
20190237331 | METAL HARD MASK LAYERS FOR PROCESSING OF MICROELECTRONIC WORKPIECES - Embodiments are disclosed for a method to process microelectronic workpieces including forming a metal hard mask layer including ruthenium (Ru MHM layer) over one or more underlying layers on a substrate for a microelectronic workpiece, etching the Ru MHM layer to provide a patterned Ru MHM layer, and etching the one or more underlying layers using the patterned Ru MHM layer as a mask to protect portion of the one or more underlying layers. For one embodiment, the Ru MHM layer is a material including 95 percent or more of ruthenium (Ru). For another embodiment, the Ru MHM layer is a material including 70 percent or more of ruthenium (Ru). Further, the Ru MHM layer preferably has a selectivity of 10 or greater with respect to a next underlying layer adjacent to the Ru MHM layer, such as a SiN hard mask layer. | 2019-08-01 |
20190237332 | ETCHING METHOD AND ETCHING APPARATUS - An etching method for etching an etching target film using a first organic film processed to have a plurality of line patterns formed on the etching target film, an oxide film conformally formed on a front surface of the etching target film so as to provide a space between adjacent line patterns, and a second organic film formed to embed the space, includes etching back the second organic film and the oxide film using an etching gas whose etching selection ratio is adjusted for the second organic film based on a line width and a width of the space so as to cause an upper surface of the first organic film to be exposed, removing the oxide film between the line pattern and the space, and etching the etching target film using the first organic film and the second organic film as a mask. | 2019-08-01 |
20190237333 | SEMICONDUCTOR METHODS AND DEVICES - In some embodiments, a method of a semiconductor process includes conformally forming a spacer layer over a plurality of mandrels that are disposed over a mask layer, portions of the spacer layer disposed over opposing sidewalls of adjacent ones of the plurality of mandrels defining trenches therebetween, filling the trenches with a dummy material, and removing first portions of the dummy material in the trenches, thereby forming a plurality of openings in the dummy material. The method further includes filling the plurality of openings with a first material, removing a remaining portion of the dummy material in the trenches, and removing the plurality of mandrels after the removing the dummy material. | 2019-08-01 |
20190237334 | FILM CARRIER, FILM APPLICATION APPARATUS, FILM APPLICATION METHOD, AND FILM TO BE APPLIED USED IN DISPLAY PANEL - The present disclosure discloses a film carrier, a film application apparatus, a film application, and a film to be applied used in a display panel. The film carrier comprises: a main body part and an attraction member. The main body part has a supporting surface and is configured to be rotatable to drive the supporting surface to swing about an axial direction of the main body part. The supporting surface has a curved projection in a plane perpendicular to the axial direction. The attraction member is disposed on the main body part for attracting the film to be applied on the supporting surface. | 2019-08-01 |
20190237335 | SYSTEMS AND METHODS FOR COPPER (I) SUPPRESSION IN ELECTROCHEMICAL DEPOSITION - Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The electroplating systems may include a catholyte tank and an anolyte tank fluidly coupled with the two baths of the two-bath electroplating chamber. The electroplating systems may include a first pump configured to provide catholyte from the catholyte tank to the first bath. The electroplating systems may include a second pump configured to provide anolyte from the anolyte tank to the second bath. The electroplating systems may also include an oxygen-delivery apparatus configured to provide an oxygen-containing fluid within the electroplating system. | 2019-08-01 |
20190237336 | GATE METAL PATTERNING TO AVOID GATE STACK ATTACK DUE TO EXCESSIVE WET ETCHING - A method of forming gate structures to a nanosheet device that includes forming at least two stacks of nanosheets, wherein each nanosheet includes a channel region portion having a gate dielectric layer present thereon. The method may further include forming a dual metal layer scheme on the gate dielectric layer of each nanosheet. The dual metal layer scheme including an etch stop layer of a first composition and a work function adjusting layer of a second composition, wherein the etch stop layer has a composition that provides that the work function adjusting layer is removable by a wet etch chemistry that is selective to the etch stop layer. | 2019-08-01 |
20190237337 | PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS - In cycle etching in which a depo process and an etching process are repeated, a depo film thickness over a pattern is controlled precisely, and etching is executed to have a desired shape stably for a long time. There are included the depo process (S | 2019-08-01 |
20190237338 | COLLOIDAL SILICA GROWTH INHIBITOR AND ASSOCIATED METHOD AND SYSTEM - A technique to inhibit the growth of colloidal silica deposits on surfaces treated in phosphoric acid is described. In one embodiment, the disclosed techniques include the use of a colloidal silica growth inhibitor as an additive to a phosphoric acid solution utilized for a silicon nitride etch. In some embodiments, the additive may have chemistry that may contain strong anionic groups. A method and apparatus is provided that monitors the silica concentration and/or the colloidal silica growth inhibitor concentration in the phosphoric acid solution during processing and adjusts the amount of those components as needed. Techniques are provided for a method and apparatus to control the additive concentration to be used as well as the silica concentration in the phosphoric acid solution. The techniques described herein provide a high selectivity etch of silicon nitride towards silicon dioxide without the growth of colloidal silica deposits on the exposed surfaces. | 2019-08-01 |
20190237339 | PROCESS AND APPARATUS FOR PROCESSING A NITRIDE STRUCTURE WITHOUT SILICA DEPOSITION - Techniques are provided to remove the growth of colloidal silica deposits on surfaces of high aspect ratio structures during silicon nitride etch steps. A high selectivity overetch step is used to remove the deposited colloidal silica. The disclosed techniques include the use of phosphoric acid to remove silicon nitride from structures having silicon nitride formed in narrow gap or trench structures having high aspect ratios in which formation of colloidal silica deposits on a surface of the narrow gap or trench through a hydrolysis reaction occurs. A second etch step is used in which the hydrolysis reaction which formed the colloidal silica deposits is reversible, and with the now lower concentration of silica in the nearby phosphoric acid due to the depletion of the silicon nitride, the equilibrium drives the reaction in the reverse direction, dissolving the deposited silica back into solution. | 2019-08-01 |
20190237340 | SELF-FORMED LINER FOR INTERCONNECT STRUCTURES - An interconnect dielectric material having an opening formed therein is first provided. A surface nitridation process is then performed to form a nitridized dielectric surface layer within the interconnect dielectric material. A metal layer is formed on the nitridized dielectric surface layer and then an anneal is performed to form a metal nitride layer between the metal layer and the nitridized dielectric surface layer. A portion of the originally deposited metal layer that is not reacted with the nitridized dielectric surface is then selectively removed and thereafter an electrical conducting structure is formed directly on the metal nitride layer that is present in the opening. | 2019-08-01 |
20190237341 | TIN OXIDE MANDRELS IN PATTERNING - Tin oxide films are used as mandrels in semiconductor device manufacturing. In one implementation the process starts by providing a substrate having a plurality of protruding tin oxide features (mandrels) residing on an exposed etch stop layer. Next, a conformal layer of spacer material is formed both on the horizontal surfaces and on the sidewalls of the mandrels. The spacer material is then removed from the horizontal surfaces exposing the tin oxide material of the mandrels, without fully removing the spacer material residing at the sidewalls of the mandrel (e.g., leaving at least 50%, such as at least 90% of initial height at the sidewall). Next, mandrels are selectively removed (e.g., using hydrogen-based etch chemistry), while leaving the spacer material that resided at the sidewalls of the mandrels. The resulting spacers can be used for patterning the etch stop layer and underlying layers. | 2019-08-01 |
20190237342 | HYBRID-CLOTH-BASED METHOD FOR MAKING TSV SUBSTRATES - The disclosure describes a method for making a hybrid cloth integrated column and further making TSV substrates, which comprises the key processing steps: forming a hybrid cloth by using metal wires and supportive wires, which contains at least one 2D array of parallel metal wires in one direction; forming a column of layered structure, which contains at least a plurality of layers of hybrid cloths, wherein all the 2D arrays of parallel metal wires are fixed in the column of layered structure and are arranged into a 3D array of parallel metal wires; making all the layers of the column of layered structure into a solid entity so as to form a hybrid cloth integrated column; and slicing the hybrid cloth integrated column to make TSV substrates. | 2019-08-01 |
20190237343 | SEMICONDUCTOR DEVICE WITH TIERED PILLAR AND MANUFACTURING METHOD THEREOF - A semiconductor device having one or more tiered pillars and methods of manufacturing such a semiconductor device are disclosed. The semiconductor device may include redistribution layers, a semiconductor die, and a plurality of interconnection structures that operatively couple a bottom surface of the semiconductor die to the redistribution layers. The semiconductor device may further include one or more conductive pillars about a periphery of the semiconductor die. The one or more conductive pillars may be electrically connected to the redistribution layers and may each comprise a plurality of stacked tiers. | 2019-08-01 |
20190237344 | ASYMMETRICAL SEALING AND GAS FLOW CONTROL DEVICE - A sealing device configured for use in a vacuum chamber between a reaction region of the vacuum chamber and an exhaust port includes a ring-shaped body with an upper surface and a lower surface. A distance between the upper surface and the lower surface of the sealing device is a thickness of the ring-shaped body. The thickness of the ring-shaped body differs along a circumference of the ring-shaped body such that the ring-shaped body has a wedge shape. The thickness of the ring-shaped body, around its circumference is dependent upon a structure of the exhaust port. | 2019-08-01 |
20190237345 | HIGH PRESSURE AND HIGH TEMPERATURE ANNEAL CHAMBER - Embodiments of the disclosure relate to an apparatus and method for annealing one or more semiconductor substrates. In one embodiment, a processing chamber is disclosed. The processing chamber includes a chamber body enclosing an internal volume, a substrate support disposed in the internal volume and configured to support a substrate during processing, a gas panel configured to provide a processing fluid into the internal volume, and a temperature-controlled fluid circuit configured to maintain the processing fluid at a temperature above a condensation point of the processing fluid. The temperature-controlled fluid circuit includes a gas conduit fluidly coupled to a port on the chamber body at a first end and to the gas panel at a second end. | 2019-08-01 |
20190237346 | ASHING APPARATUS, ASHING METHOD AND RECORDING MEDIUM - An ashing apparatus includes a light irradiating unit configured to irradiate, to a substrate having an organic film formed on a surface thereof, processing light for ashing the organic film; a posture changing unit configured to change a posture of the substrate with respect to the light irradiating unit; and a control unit. The control unit performs: a first processing of controlling the posture changing unit and the light irradiating unit to irradiate the processing light to the surface of the substrate while changing the posture of the substrate from a first posture to a second posture; and a second processing of controlling, after the first processing, the posture changing unit and the light irradiating unit to irradiate the processing light to the surface of the substrate while changing the posture of the substrate from a third posture different from the first posture to a fourth posture. | 2019-08-01 |
20190237347 | INTEGRATED ELASTOMERIC INTERFACE LAYER FORMATION AND SINGULATION FOR LIGHT EMITTING DIODES - Embodiments relate to an integrated process for forming an elastomeric layer over an epitaxial structure of multiple light emitting diode (LED) dies, and then etching the elastomeric layer into individual elastomeric interface layers (elayers) on each of the LED dies and etching the epitaxial structure to singulate the LED dies. The elayer allows each LED die to be picked up by a pick-up head (or pick and place head (PPH)), and placed onto a display substrate including control circuits for sub-pixels of an electronic display. In some embodiments, the LED dies are micro-LED (uLED) dies. | 2019-08-01 |
20190237348 | SELF-CALIBRATION APPARATUS AND METHOD FOR REAL-TIME TEMPERATURE MEASUREMENT SYSTEM OF MOCVD DEVICE - A self-calibration apparatus and method for a real-time temperature measurement system of a MOCVD device belong to the technical field of semiconductor manufacturing. The apparatus comprises a MOCVD reactor chamber ( | 2019-08-01 |
20190237349 | DEPOSITION MASK PACKAGE AND DEPOSITION MASK PACKAGING METHOD - A deposition mask package according to the present embodiment includes a receiving portion, a lid portion that faces the receiving portion, a deposition mask that is arranged between the receiving portion and the lid portion and has an effective region in which a plurality of through-holes is formed. The receiving portion has a first opposing surface facing the lid portion and a concave portion provided on the first opposing surface. The concave portion is covered by a first flexible film. The effective region of the deposition mask is arranged on the concave portion with the first flexible film interposed therebetween. | 2019-08-01 |
20190237350 | SUBSTRATE TREATMENT APPARATUS, CONTROLLER OF SUBSTRATE TREATMENT APPARATUS, METHOD FOR CONTROLLING SUBSTRATE TREATMENT APPARATUS, AND MEMORY MEDIUM STORING PROGRAM - A substrate treatment apparatus includes a plurality of treatment chambers performing different treatment types on a substrate; a transfer device; and a controller that controls the transfer of the substrate and the substrate treatment. The controller enables fixation of a time for pulling up the substrate for each treatment chambers/treatment type and creation of a transfer schedule for transferring the substrate among the plurality of treatment chambers/treatment types and treating the substrate so as to maximize throughput, and enables correction of the transfer schedule to extend, based on a waiting time of the transfer device after storage of the substrate into a treatment chamber of one treatment type and a waiting time of the treatment chamber after treatment of the substrate, a time required for pulling up the substrate from a treatment chamber of an immediately previous treatment type in transfer order of the substrate. | 2019-08-01 |
20190237351 | AUTOMATIC WAFER CENTERING METHOD AND APPARATUS - A substrate transport apparatus including a transport chamber, a drive section, a robot arm having an end effector at a distal end configured to support a substrate and being connected to the drive section generating at least arm motion in a radial direction extending and retracting the arm, an imaging system with a camera mounted in a predetermined location to image at least part of the robot arm, and a controller connected to the imaging system to image the arm moving to a predetermined repeatable position, the controller effecting capture of a first image of the robot arm proximate to the repeatable position decoupled from encoder data of the drive axis, wherein the controller calculates a positional variance of the robot arm from comparison of the first image with a calibration image, and from the positional variance determines a motion compensation factor changing the extended position of the robot arm. | 2019-08-01 |
20190237352 | AUTOMATED APPARATUS TO TEMPORARILY ATTACH SUBSTRATES TO CARRIERS WITHOUT ADHESIVES FOR PROCESSING - Embodiments include a method for processing thin substrates. Embodiments may include electrostatically bonding a substrate to a first electrostatic carrier (ESC), with a backside of the substrate is facing away from the first ESC. Thereafter, the substrate may be thinned to form a thinned substrate. The thinned substrate may then be transferred to a second ESC with a front side of the thinned substrate facing away from the second ESC. Embodiments may include cleaning the front side surface of the thinned substrate and transferring the thinned substrate to a third ESC. In an embodiment, a backside of the thinned substrate is facing away from the third ESC. Embodiments may also include processing the backside surface of the thinned substrate, and transferring the thinned substrate to a tape frame. | 2019-08-01 |
20190237353 | ELECTROSTATIC CHUCKING PEDESTAL WITH SUBSTRATE BACKSIDE PURGING AND THERMAL SINKING - An electrostatic substrate chuck with substrate backside purging to prevent incidental backside deposition and that provides thermal sinking to prevent or mitigate the failure of seals. | 2019-08-01 |
20190237354 | SYSTEMS AND METHODS FOR AUTOMATED ROBOTIC ARM SENSING - In an embodiment, a system includes: an airlock; a first semiconductor processing chamber, a second semiconductor processing chamber; and a transfer module configured to move a sensor into and out of the first semiconductor processing chamber and the second semiconductor processing chamber, wherein the sensor is configured to: collect sensor data characterizing the first semiconductor processing chamber when within the first semiconductor processing chamber; and collect sensor data characterizing the second semiconductor processing chamber when within the second semiconductor processing chamber, wherein the transfer module, the first semiconductor processing chamber, and the second semiconductor processing chamber are within a controlled internal atmosphere on a first side of the airlock and separated by the airlock from an uncontrolled external atmosphere on a second side of the airlock. | 2019-08-01 |
20190237355 | HEAT TREATMENT SUSCEPTOR AND HEAT TREATMENT APPARATUS - A plurality of substrate support pins are provided upright on a holding plate so as to contact a position on which no stress is exerted in a lower surface of a semiconductor wafer when an upper surface of the semiconductor wafer is irradiated with flash light emitted from a flash lamp and thus reaches a maximum temperature. When the application of the flash light causes the upper surface of the semiconductor wafer to warp such that the upper surface becomes raised, stress concentration does not occur in the contact position of the lower surface of the semiconductor wafer that contacts the plurality of substrate support pins. The semiconductor wafer can be prevented from breaking during the application of the flash light. | 2019-08-01 |
20190237356 | AIR GAP FORMATION IN BACK-END-OF-LINE STRUCTURES - Interconnect structures and methods for forming an interconnect structure. A dielectric layer of a metallization level is deposited and a trench is patterned in the dielectric layer. A sacrificial layer is formed in the trench in the dielectric layer. The sacrificial layer is patterned to form a first trench and a second trench separated from the first trench by a section of the sacrificial layer. A first metal interconnect is formed in the first trench, a second metal interconnect is formed in the second trench, and a porous cap layer is formed over the first metal interconnect, the second metal interconnect, and the section of the sacrificial layer. After forming the porous cap layer, the section of the sacrificial layer is removed. | 2019-08-01 |
20190237357 | PREPARATION METHOD OF MULTILAYER MONOCRYSTALLINE SILICON FILM - A preparation method of a multilayer monocrystalline silicon film sequentially includes: first, taking two monocrystalline silicon slices of which surfaces are clean, processing the surfaces of the silicon slices by a plasma activation technology, and then, performing pre-bonding; transferring the bonded silicon slices to an annealing furnace having a temperature of 200-300° C., and performing annealing for 6-10 hours to avoid generating a transition region and to completely bond the two silicon slices; thinning the annealed bonded slices to a desired target thickness; and taking the thinned SOI slice as Si-1, taking another monocrystalline silicon slice as Si-2, and performing the first three steps on Si-1 and Si-2 to obtain the multilayer monocrystalline silicon film. The silicon slices that are processed by the plasma activation technology have a large pre-bonding force during bonding. A favorable bonding effect is achieved after annealing. | 2019-08-01 |
20190237358 | METHODS OF FABRICATING SILICON-ON-INSULATOR (SOI) SEMICONDUCTOR DEVICES USING BLANKET FUSION BONDING - A method for fabricating silicon-on-insulator (SOI) semiconductor devices, wherein the piezoresistive pattern is defined within a blanket doped layer after fusion bonding. This new method of fabricating SOI semiconductor devices is more suitable for simpler large scale fabrication as it provides the flexibility to select the device pattern/type at the latest stages of fabrication. | 2019-08-01 |
20190237359 | Combined wafer production method with laser treatment and temperature-induced stresses - A method for the production of layers of solid material is contemplated. The method may include the steps of providing a solid body for the separation of at least one layer of solid material, generating defects by means of at least one radiation source, in particular a laser, in the inner structure of the solid body in order to determine a detachment plane along which the layer of solid material is separated from the solid body, and applying heat to a polymer layer disposed on the solid body in order to generate, in particular mechanically, stresses in the solid body, due to the stresses a crack propagating in the solid body along the detachment plane, which crack separates the layer of solid material from the solid body. | 2019-08-01 |