| 31st week of 2013 patent applcation highlights part 15 |
| Patent application number | Title | Published |
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| 20130193356 | ANTI-ROTATION ASSEMBLIES FOR USE WITH FLUID VALVES - Anti-rotational assemblies for use with fluid valves are disclosed herein. An example anti-rotation assembly includes an anti-rotation retainer to couple to a flow control member of a valve and an anti-rotator to engage the anti-rotation retainer. The anti-rotator prevents rotation of the anti-rotation retainer relative to a longitudinal axis of the anti-rotation retainer when the anti-rotation retainer is disposed in the valve. | 2013-08-01 |
| 20130193357 | MANUAL OVERRIDES FOR VALVES - Manual overrides for valves are disclosed herein. An example apparatus includes an actuator to move a stem of a valve. The actuator includes a housing defining a bore and a piston disposed in the bore. The example apparatus also includes a rod movably coupled to the housing to extend into the bore, and the piston is to be movable via the rod or a fluid to flow into the bore. The example apparatus also includes a lock to hold the rod in a first position on the housing where the rod is to disable a supply of the fluid to the bore. | 2013-08-01 |
| 20130193358 | ELECTROMAGNETIC VALVE EQUIPPED WITH MANUAL OPERATION ELEMENT INCLUDING SAFETY DEVICE - On an outer surface of an electromagnetic valve body, a manual operation element is provided slidably horizontally, and a slide member is provided slidably in a direction orthogonal to a sliding direction of the manual operation element. The slide member is movable to a lock position and a non-lock position. At the lock position, the slide member is retained by the manual operation element to lock the manual operation element at a non-switch position. At the non-lock position, the slide member unlocks the manual operation element to allow the manual operation element to move toward a switch position. | 2013-08-01 |
| 20130193359 | ASSEMBLING A NEEDLELESS VALVE SYSTEM - A base portion for a needleless valve system comprising a body, and a valve coupling feature disposed on the body. The valve coupling feature is configured for coupling to a base coupling feature of a valve of a first type and a base coupling feature of a valve of a second type. | 2013-08-01 |
| 20130193360 | Valve Trim Assembly and Flow Control Valve Including the Valve Trim Assembly - A flow control valve includes an inlet, an outlet, and defines a fluid flow path. A valve seat is disposed within a valve body, and a valve plug in the valve body is surrounded by a cage. An exterior surface of the valve plug includes a plurality of notch sets, each notch set spaced apart from an adjacent notch set along the longitudinal axis, and the cage is disposed within the valve body and arranged to retain the valve seat, with an interior of the cage including a plurality of annular recesses. The annular recesses are spaced apart along the longitudinal axis, and the cage includes a plurality of apertures forming a portion of the fluid flow path. The notch sets and the recesses are arranged to form a plurality of turns in the fluid flow path when the valve plug is shifted toward the open position. | 2013-08-01 |
| 20130193361 | LOCKING MECHANISM FOR UNISEX BALL VALVE COUPLING - A unisex ball valve coupling includes an interface end that engages an interface end of a mating coupling half assembly. A valve of the coupling has a valve body, which has an open position in which fluid flow is permitted through the internal passage and a closed position in which the valve body closes off fluid flow through the internal passage. A valve shaft rotates with the valve body between the open position and the closed position. The valve shaft has a first surface. A blocking member is movable from a blocking position to a non-blocking position within the body portion. In the blocking position, the blocking member engages the first surface of the valve shaft to secure the valve body in the closed position and, in the non-blocking position, the blocking member does not engage the first surface of the valve shaft to permit opening of the valve. | 2013-08-01 |
| 20130193362 | Valve Module, in particular Solenoid Valve for a Brake System of a Motor Vehicle, Method for the Production of said Type of Valve Module - A valve module, in particular a solenoid valve for a brake system of a motor vehicle, is disclosed. The valve module includes an essentially cylindrical-shaped valve base body in which a valve needle is arranged in an axially displacable manner, and a housing cap which closes the valve base body on one end. The cap is maintained on the valve base body by at least one holding device. The maintaining device includes at least one recess on the outer surface of the cover of the valve base body into which plastically deformed material of the housing cap is introduced. A method for producing this type of valve module is also disclosed. | 2013-08-01 |
| 20130193363 | DIRECTIONAL EXHAUST VALVE - A directional exhaust valve for controlling a flow of exhaust gas includes a housing having an inlet port and at least two outlet ports. Arranged movably within the housing is a control element which has a passageway to connect the inlet port with at least one of the outlet ports while closing at least in part the other one of the outlet ports. The control element is configured in the form of a hollow cylinder which is closed on one end and has an outer surface area formed with an opening, with the passageway extending between an open end face of the control element and the opening. | 2013-08-01 |
| 20130193364 | METHOD AND MATERIALS FOR SEPARATING NUCLEIC ACID MATERIALS - Nucleic acid material can be effectively separated from a fluid under mild conditions by the use of a positively charged polymer which binds the nucleic acid material. Disclosed is a novel positively charged polymer which may be employed in the separation process. This polymer comprises an acidified polyamine, such as polyethyleneimine which has been reacted with a nonacidified polyethyleneimine in a coupling reaction. The acidified polyethyleneimine may be a coarboxylated and/or sulfonated polyethyleneimine. | 2013-08-01 |
| 20130193365 | Natural fiber insulation material and method for makingthe same - Durable insulation materials, having combined properties of low thermal conductivity along with low water absorption/high water repellency are suitable for many applications such as insulation to buildings walls and air conditioning pipes and as insulation materials for durable electrical goods such as refrigerators and the insulation of metallic conducting wire. The current invention is a new and novel insulation material based resins and naturally occurring fibers found in plants such as | 2013-08-01 |
| 20130193366 | OPTIMIZED HEAT-PROTECTION MATERIAL - A material for protecting a surface from heat made of a mixture comprising cork granules and resin as a binding agent, which also includes short fibers of heat-resistant material, and phenolic resin or epoxy resin. | 2013-08-01 |
| 20130193367 | PIEZOELECTRIC COMPOSITION AND PIEZOELECTRIC ELEMENT - A piezoelectric compound having no occurrence of segregation or uneven structures as well as a piezoelectric element having excellent piezoelectric properties. The piezoelectric composition includes a main component that is a perovskite-typed oxide represented by formula of ABO | 2013-08-01 |
| 20130193368 | HEAT TRANSFER COMPOSITIONS - The invention provides a heat transfer composition comprising trans-1,3,3,3-tetrafluoropropene (R-1234ze(E)), fluoroethane (R-161) and a third component selected from difluoromethane (R-32) and/or 1,1-difluoroethane (R-152a). | 2013-08-01 |
| 20130193369 | HEAT TRANSFER COMPOSITIONS - The invention provides a heat transfer composition comprising: (i) trans-1,3,3,3-tetrafluoropropene (R-1234ze(E)); (ii) a second component selected from difluoromethane (R-32), propene (R-1270)propane (R290) and mixtures thereof; (iii) a third component selected from pentafluoroethane (R-125), 1,1,1,2-tetrafluoroethane (R-134a), and mixtures thereof; and optionally (iv) a fourth component selected from fluoroethane (R-161), 1,1-difluoroethane (R-152a) and mixtures thereof. | 2013-08-01 |
| 20130193370 | NOVEL CELLULOSE ETHERS AND THEIR USE - Cellulose ethers are described which are useful in compositions for extrusion-molded bodies. In these cellulose ethers the ether substituents are methyl groups, hydroxyalkyl groups, and optionally alkyl groups being different from methyl, the cellulose ether has an MS (hydroxyalkyl) of 0.11 to 1.00, and hydroxy groups of anhydroglucose units are substituted with methyl groups such that [s23/s26−0.2*MS (hydroxyalkyl)] is 0.35 or less, wherein s23 is the molar fraction of anhydroglucose units wherein only the two hydroxy groups in the 2- and 3-positions of the anhydroglucose unit are substituted with methyl groups and wherein s26 is the molar fraction of anhydroglucose units wherein only the two hydroxy groups in the 2- and 6-positions of the anhydroglucose unit are substituted with methyl groups. | 2013-08-01 |
| 20130193371 | METHOD OF MANUFACTURING SECONDARY BATTERY - A method of manufacturing a secondary battery, using an electrode plate having an electrode mixture layer formed from an electrode mixture paste, includes performing wet preliminary kneading to knead a powder and a solvent with a stirrer, while measuring kneading torque, determining a mixing ratio of the powder to the solvent used in the wet preliminary kneading in the case where the kneading torque once increases as kneading time passes from start of kneading, reaches a peak value, and then decreases, as a desirable mixing ratio, and performing main kneading to mix and knead the powder and the solvent of the electrode mixture paste, at the mixing ratio determined as the desirable mixing ratio, at a shearing speed that does not exceed a speed of shearing a mixture of the powder and the solvent with the stirrer during the wet preliminary kneading, and producing the electrode mixture paste. | 2013-08-01 |
| 20130193372 | Solids Passivation - The invention pertains to a method of passivating direct process solids and to passivated and quenched compositions resulting from said method. The method of passivating direct process solids according to the invention comprises combining direct process solids with a passivating composition comprising clay, base, and water. The passivated composition of the invention comprises direct process solids and a passivating composition comprising clay, base, and water. The quenched composition of the invention comprises the passivated composition, wherein the passivated composition has been held for a sufficient period of time for the reactive species from the direct process solids to be substantially quenched and/or oxidized. | 2013-08-01 |
| 20130193373 | METHOD AND ABSORBENT COMPOSITIONS FOR RECOVERING A GASEOUS COMPONENT FROM A GAS STREAM - A method and apparatus for recovering a gaseous component from an incoming gas stream is described. The incoming gas stream is contacted with a lean aqueous absorbing medium to absorb at least a portion of the gaseous component from the incoming gas stream to form a lean treated gas stream and a rich aqueous absorbing medium. At least a portion of the gaseous component is desorbed from the rich aqueous absorbing medium at a temperature to form an overhead gas stream and a regenerated aqueous absorbing medium. At least a portion of the overhead gas stream is treated to recover a condensate stream. At least a portion of the condensate stream is used to form a heated stream. At least a portion of the heated stream is recycled back to the desorbing step. Novel absorbing medium compositions to recover carbon dioxide and/or hydrogen sulfide are also described. | 2013-08-01 |
| 20130193374 | Method of removing metals from hydrocarbon feedstock using esters of carboxylic acids - Method of removing metals from hydrocarbon feedstock using esters of carboxylic acids, and additives for the same, are provided, wherein hydrocarbon stream including crude oil containing metals and salts thereof, wherein metal is calcium and its salt is calcium naphthenate, is mixed with an effective metal-removing-amount of an aqueous extraction-solution of non-precipitating and non-fouling additive comprising a chemical compound selected from a group consisting of methyl or ethyl or propyl or isopropyl mono- and/or di-esters of any one of the carboxylic acids selected from the groups consisting of maleic acid, maleic anhydride, and fumaric acid, or an appropriate combination of said esters, or an appropriate combination of any of said esters with any of said carboxylic acids to form a hydrocarbonous phase and an aqueous phase containing the metal ions; and separating aqueous phase. | 2013-08-01 |
| 20130193375 | PROCESS FOR THE REMOVAL OF HEAT STABLE SALTS FROM ACID GAS ABSORBENTS - A process for the regeneration of an acid gas absorbent comprising an amine and heat stable salts by phase separation, comprising a) mixing the acid gas absorbent with an alkaline solution, to form a mixture with a pH above the pH equivalence point of the amine; b) cooling the mixture to a temperature below 500 C; c) separating the mixture into a regenerated acid gas absorbent and a waste stream; d) collecting the regenerated acid gas absorbent separate from the waste stream. | 2013-08-01 |
| 20130193376 | LIQUID CRYSTAL SYSTEM AND LIQUID CRYSTAL DISPLAY - The instant invention relates to mesogenic systems comprising a) a polymeric component, component A, obtained or obtainable from polymerisation of a precursor comprising one or more mesogenic mono-reactive compounds, one or more di-reactive compounds, which optionally are also mesogenic compounds and optionally a photo-initiator and a low molecular weight component, component B, comprising one or more mono-reactive, mesogenic compounds, one or more mesogenic compounds and one or more chiral dopants, exhibiting a Blue Phase, as well as to the use of these systems in deices and to these devices. | 2013-08-01 |
| 20130193377 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - To provide a liquid crystal composition satisfying at least one characteristic such as a high maximum temperature of a nematic phase, a low minimum temperature thereof, a small viscosity, a suitable optical anisotropy, a large negative dielectric anisotropy and specific resistance, a high stability to ultraviolet light and heat; a liquid crystal composition having a suitable balance regarding at least two of the characteristics; and an AM device having a short response time, a large voltage holding ratio and contrast ratio, a long service life; a solution is a liquid crystal composition that has a negative dielectric anisotropy, and contains a specific compound having a large negative dielectric anisotropy as a first component and a specific compound having a small viscosity as a second component, and may contain a specific compound having a large negative dielectric anisotropy as a third component, and a liquid crystal display device including the composition. | 2013-08-01 |
| 20130193378 | PROCESS AND APPARATUS FOR CARBON DIOXIDE AND CARBONYL SULFIDE CAPTURE VIA ION EXCHANGE RESINS - A process for the reduction of carbon dioxide and carbonyl sulfide from various types of gas emitting sources containing carbon dioxide and/or gas or liquid emitting sources containing carbonyl sulfide, using ion exchange resin. | 2013-08-01 |
| 20130193379 | ISOTHIOINDIGO-BASED POLYMERS - A polymer of Formula (I) | 2013-08-01 |
| 20130193380 | BI-INDOLINE-DITHIONE POLYMERS - A polymer of Formula (I) | 2013-08-01 |
| 20130193381 | WATER DISPERSIBLE POLYTHIOPHENES MADE WITH POLYMERIC ACID COLLOIDS - Compositions are provided comprising a continuous liquid aqueous medium having dispersed therein a polydioxythiophene and at least one colloid-forming fluorinated polymeric acid. Films from invention compositions are useful as buffer layers in organic electronic devices, including electroluminescent devices, such as, for example, organic light emitting diodes (OLED) displays. | 2013-08-01 |
| 20130193382 | COMPOUNDS FOR ELECTRONIC DEVICES - The present invention relates to compounds of the formula (I) and to the use thereof in electronic devices. The invention furthermore relates to electronic devices, preferably organic electroluminescent devices (OLEDs), comprising one or more com-pounds of the formula (I). The invention again furthermore relates to the preparation of compounds of the formula (I) and to formulations comprising one or more compounds of the formula (I). | 2013-08-01 |
| 20130193383 | CONDUCTIVE ADHESIVE - A conductive adhesive is provided useful for providing electrically conductive joints in joins between panels, particularly conductive carbon composite panels in a WESP, is prepared from a corrosion resistant resin and particulate carbon black which is uniformly dispersed in the resin. | 2013-08-01 |
| 20130193384 | POLYMER THICK FILM POSITIVE TEMPERATURE COEFFICIENT CARBON COMPOSITION - The invention is directed to a polymer thick film positive temperature coefficient carbon resistor composition comprising: (a) organic medium comprising (i) organic polymeric binder; and (ii) solvent; and (b) conductive carbon powder. The composition may be processed at a time and temperature necessary to remove all solvent. | 2013-08-01 |
| 20130193385 | ELECTROPHORETIC DISPERSION - The present invention is directed to an electrophoretic dispersion comprising charged pigment particles dispersed in a solvent or solvent mixture, wherein the pigment particles have an average aggregation size more than 2 times their primary size. The electrophoretic dispersion of the present invention is capable of improving image bistability through adjusting the aggregation size of the charged pigment particles. | 2013-08-01 |
| 20130193386 | THERMOCHROMIC SYSTEMS WITH CONTROLLED HYSTERESIS - The present disclosure is a method for controlling the hysteresis window and improving the color switching properties of reversible thermochromic dye systems. The method adds preferred co-solvents to existing reversible thermochromic dye systems in order to decrease the temperature range between the full color point and the clearing point. The co-solvents also add resistance to ultraviolet radiation. | 2013-08-01 |
| 20130193387 | Composition and Process for Preparing NIR Shielding Masterbatch and NIR Shielding Masterbatch and Application Thereof - Disclosed herein is a near infrared shielding masterbatch. The near infrared shielding masterbatch includes a cross-linked thermoplastic polymer and at least one metallic ionic compound powder. The cross-linked thermoplastic polymer comprises a thermoplastic polymer cross-linked by a cross-linking agent and that a weight ratio of the thermoplastic polymer to the cross-linking agent is about 68.7:2 to about 98.7:0.1. The metallic ionic compound powder is dispersed within the cross-linked thermoplastic polymer, and that a weight ratio of the cross-linked thermoplastic polymer to the metallic ionic compound powder is about 2.8:1 to about 98.8:1. | 2013-08-01 |
| 20130193388 | ELECTROMAGNETIC TOOL FOR WIRE ROUTING - Various arrangements for remotely manipulating a wire may be presented. A wire pilot may be presented that is configured to be coupled with the wire and to move in response to a magnetic field created by a remote guide when the wire pilot is within a wall and the remote guide is external to the wall. The remote guide may include a magnetic field generator configured to create the magnetic field and a metal detector configured to detect wires through a wall. | 2013-08-01 |
| 20130193389 | CABLE MANIPULATOR - A cable manipulator includes a base and a plurality of plates attached to the base, each of the plurality of plates including a pair of cams attached to each plate. Each cam of the pair of cams is spaced from each other such that a length of cable can be inserted therebetween. At least one of the plurality of plates is a rotatable plate such that rotation of the rotatable plate causes an end of the cable to be moved closer to the cable manipulator. | 2013-08-01 |
| 20130193390 | Carpet Installation Apparatus - A carpet installation apparatus is provided. The apparatus can have inner and outer telescoping tubes that are operated by a threaded rod wherein one end of the rod engages a nut or receiver on the inner tube and the other end of the rod extends through an end wall of the outer wall for attachment to a handle. Turning the handle rotates the rod and moves the inner tube inwardly or outwardly relative to the outer tube. The apparatus further includes legs extending substantially perpendicular to the tubes, the legs having pin blocks disposed on the ends thereof for gripping carpet during the installation of the carpet. | 2013-08-01 |
| 20130193391 | METHOD FOR WINDING AND UNWINDING A SYNTHETIC ROPE ON A WINCH DRUM - The invention relates to a method for winding and unwinding a synthetic rope on a winch drum of a winch. The rope is helically wound with a substantially constant speed across the width of the drum back and forth such that in a coiled state of the winch the drum comprises several layers of rope. The spacing between windings of the rope is at least 0.5 times the diameter of the rope. | 2013-08-01 |
| 20130193392 | Ramp - The invention is directed towards a lifting device for automobiles or other wheeled vehicles. The lifting device comprises a ramp with the ability for the device to raise into the air after the vehicle has driven up the ramp. | 2013-08-01 |
| 20130193393 | ANIMAL-RESISTANT FENCE AND METHOD FOR ASSEMBLING AND USING THE SAME - An animal-resistant fence preventing entry of animals includes a first post, a second post, and a first panel member extending between the two posts. The fence further includes a second panel member extending from an upper portion of the first panel member above the ground level, and a third panel member extending from a lower portion of the first panel member beneath the ground level. | 2013-08-01 |
| 20130193394 | INCORPORATION OF OXYGEN INTO MEMORY CELLS - Electronic apparatus, systems, and methods include a resistive random access memory cell having an oxygen gradient in a variable resistive region of the resistive random access memory cell and methods of forming the resistive random access memory cell. Oxygen can be incorporated into the resistive random access memory cell by ion implantation. Additional apparatus, systems, and methods are disclosed. | 2013-08-01 |
| 20130193395 | VARIABLE RESISTANCE MEMORY DEVICE AND METHOD OF FORMING THE SAME - According to example embodiments, a variable resistance memory device may include memory cells, in which contact areas between word lines and a variable resistance layer are almost constant. The variable resistance memory device may include a vertical electrode on a substrate, horizontal electrode layers and insulating layers sequentially and alternately stacked on the substrate. The horizontal electrode layers and the insulating layers may be adjacent to the vertical electrode. The variable resistance layer may be between the vertical electrode the horizontal electrode layers. A thickness of one of the horizontal electrode layers adjacent to the substrate may be thickness than a thickness of an other of the horizontal electrode layers that is spaced apart from the substrate. | 2013-08-01 |
| 20130193396 | VARIABLE RESISTIVE ELEMENT, AND NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE - A variable resistive element that performs a forming action at small current and a stable switching operation at low voltage and small current, and a low-power consumption large-capacity non-volatile semiconductor memory device including the element are realized. The element includes a variable resistor between first and second electrodes. The variable resistor includes at least two layers, which are a resistance change layer and high-oxygen layer, made of metal oxide or metal oxynitride. The high-oxygen layer is inserted between the first electrode having a work function smaller than the second electrode and the resistance change layer. The oxygen concentration of the metal oxide of the high-oxygen layer is adjusted such that the ratio of the oxygen composition ratio to the metal element to stoichiometric composition becomes larger than the ratio of the oxygen composition ratio to the metal element of the metal oxide forming the resistance change layer to stoichiometric composition. | 2013-08-01 |
| 20130193397 | High Consistency Resistive Memory and Manufacturing Method Thereof - The present invention relates to the technical field of memories, and in particular to a highly-consistent resistive memory and method of fabricating the same. The resistive memory comprises: a lower electrode which is formed in a first dielectric layer by patterning; a second dielectric layer formed on the lower electrode and the first dielectric layer and provided with an opening for exposing the lower electrode to perform patterning; an edge wall formed in the opening of the second dielectric layer for covering a border area of the lower electrode and the first dielectric layer so that only the middle area of the lower electrode is partially or totally exposed; a storage medium layer formed by performing oxidization with the second dielectric layer and the edge wall as mask; and an upper electrode. The resistive memory exhibits good consistency and high reliability; moreover, unit size is mall, which is advantageous for improving storage characteristic. When an array of memories is formed by the resistive memories, a good consistency is obtained among multiple resistive memories. | 2013-08-01 |
| 20130193398 | MEMORY ARRAYS AND METHODS OF FORMING SAME - Memory arrays and methods of forming the same are provided. One example method of forming a memory array can include forming a first conductive material having a looped feature using a self-aligning multiple patterning technique, and forming a first sealing material over the looped feature. A first chop mask material is formed over the first sealing material. The looped feature and the first sealing material are removed outside the first chop mask material. | 2013-08-01 |
| 20130193399 | 3D SOLID-STATE ARRANGEMENT FOR SOLID STATE MEMORY - The present invention generally relates to the three-dimensional arrangement of memory cells. This 3D arrangement and orientation is made with macro cells that enable the programming, reading and/or querying of any memory cell in the 3D array without the need for overhead wiring or by utilizing a minimal amount of overhead wiring. The individual macro cells are electrically coupled together such that a single transistor on the substrate can be utilized to address multiple macro cells. In such an arrangement, all the auxiliary circuits for addressing memory elements are simplified thereby diminishing their integrated circuit area. | 2013-08-01 |
| 20130193400 | Memory Cell Structures and Memory Arrays - Some embodiments include memory cell structures. The structures include a vertical transistor having a bottom source/drain region electrically coupled to a first access/sense line, and having a gate comprised by a second access/sense line. The structures also include programmable material over the vertical transistor and electrically coupled with a top source/drain region of the vertical transistor, with the programmable material having at least two compositionally different regions. The structures also include an electrically conductive material over and directly against the programmable material. Some embodiments include memory arrays. | 2013-08-01 |
| 20130193401 | SELF-ALIGNED PROCESS TO FABRICATE A MEMORY CELL ARRAY WITH A SURROUNDING-GATE ACCESS TRANSISTOR - A memory array including a plurality of memory cells. Each word line is electrically coupled to a set of memory cells, a gate contact and a pair of dielectric pillars positioned parallel to the word line. Dielectric pillars are placed on both sides of the gate contact. Also a method to prevent a gate contact from electrically connecting to a source contact for a plurality of memory cells on a substrate. The method includes formation of a pair of pillars made of an insulating material over the substrate, depositing an electrically conductive gate material between and over the pillars, etching the gate material such that it both partially fills a space between the pair of pillars and forms a word line for the memory cells, and depositing a gate contact between the dielectric pillars such that the gate contact is in electrical contact with the gate material. | 2013-08-01 |
| 20130193402 | PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A phase-change random access memory (PCRAM) device and a method of manufacturing the same. The PCRAM device includes memory cells that each include a semiconductor substrate having a switching element, a lower electrode formed on the switching element, a phase-change layer formed on the lower electrode, and an upper electrode formed on the phase-change layer; and a porous insulating layer arranged to insulate one memory cell from another memory cell of the memory cells. | 2013-08-01 |
| 20130193403 | Memory Arrays and Methods of Forming Memory Cells - Some embodiments include methods of forming memory cells utilizing various arrangements of conductive lines, electrodes and programmable material; with the programmable material containing high k dielectric material directly against multivalent metal oxide. Some embodiments include arrays of memory cells, with the memory cells including programmable material containing high k dielectric material directly against multivalent metal oxide. | 2013-08-01 |
| 20130193404 | PHOTOCONVERSION DEVICE WITH ENHANCED PHOTON ABSORPTION - An infrared photoconversion device comprising a collector with at least an active layer made of a single sheet of doped single-layer, bilayer, or multilayer graphene patterned as nanodisks or nanoribbons. The single sheet of doped graphene presents high absorbance and thus, the efficiency of devices such as photovoltaic cells, photodetectors, and light emission devices can be improved by using graphene as the central absorbing or emitting element. These devices become tunable because their peak absorption or emission wavelength is changed via electrostatic doping of the graphene. | 2013-08-01 |
| 20130193405 | Imprinted Semiconductor Multiplex Detection Array - An array of sensor devices, each sensor including a set of semiconducting nanotraces having a width less than about 100 nm is provided. Method for fabricating the arrays is disclosed, providing a top-down approach for large arrays with multiple copies of the detection device in a single processing step. Nanodimensional sensing elements with precise dimensions and spacing to avoid the influence of electrodes are provided. The arrays may be used for multiplex detection of chemical and biomolecular species. The regular arrays may be combined with parallel synthesis of anchor probe libraries to provide a multiplex diagnostic device. Applications for gas phase sensing, chemical sensing and solution phase biomolecular sensing are disclosed. | 2013-08-01 |
| 20130193406 | LIGHT EMITTING DIODE AND FABRICATION METHOD THEREOF - The present invention discloses an LED and its fabrication method. The LED comprises: a sapphire substrate; an epitaxial layer, an active layer and a capping layer arranged on the sapphire substrate in sequence; wherein a plurality of cone-shaped structures are formed on the surface of the sapphire substrate close to the epitaxial layer. The cone-shaped structures can increase the light reflected by the sapphire substrate, raising the external quantum efficiency of the LED, thus increasing the light utilization rate of the LED. Furthermore, the formation of a plurality of cone-shaped structures can improve the lattice matching between the sapphire substrate and other films, reducing the crystal defects in the film formed on the sapphire substrate, increasing the internal quantum efficiency of the LED. | 2013-08-01 |
| 20130193407 | NANOCRYSTALS INCLUDING A GROUP IIIA ELEMENT AND A GROUP VA ELEMENT, METHOD, COMPOSITION, DEVICE AND OTHER PRODUCTS - A population of nanocrystals including a core comprising a first semiconductor material comprising one or more elements of Group IIIA of the Periodic Table of Elements and one or more elements of Group VA of the Periodic Table of Elements, and a shell disposed over at least a portion of the core, the shell comprising a second semiconductor material, wherein the nanocrystal is capable of emitting light having a photoluminescence quantum efficiency of at least about 30% upon excitation. Also disclosed is a nanocrystal comprising a nanocrystal core and a shell comprising a semiconductor material comprising at least three chemical elements and obtainable by a process comprising adding a precursor for at least one of the chemical elements of the semiconductor material from a separate source to a nanocrystal core while simultaneously adding amounts of precursors for the other chemical elements of the semiconductor material. Devices including nanocrystals are disclosed. | 2013-08-01 |
| 20130193408 | LIGHT-EMITTING DIODE FOR EMITTING ULTRAVIOLET LIGHT - An ultraviolet (UV) light-emitting diode including an n-type semiconductor layer, an active layer disposed on the n-type semiconductor layer, a p-type semiconductor layer disposed on the active layer and formed of p-type AlGaN, and a p-type graphene layer disposed on the p-type semiconductor layer and formed of graphene doped with a p-type dopant. The UV light-emitting diode has improved light emission efficiency by lowering contact resistance with the p-type semiconductor layer and maximizing UV transmittance. | 2013-08-01 |
| 20130193409 | Deep Ultraviolet Light Emitting Diode - A light emitting diode is provided, which includes an n-type contact layer and a light generating structure adjacent to the n-type contact layer. The light generating structure includes a set of quantum wells. The contact layer and light generating structure can be configured so that a difference between an energy of the n-type contact layer and an electron ground state energy of a quantum well is greater than an energy of a polar optical phonon in a material of the light generating structure. Additionally, the light generating structure can be configured so that its width is comparable to a mean free path for emission of a polar optical phonon by an electron injected into the light generating structure. | 2013-08-01 |
| 20130193410 | NANO-DEVICES FORMED WITH SUSPENDED GRAPHENE MEMBRANE - Semiconductor nano-devices, such as nano-probe and nano-knife devices, which are constructed using graphene films that are suspended between open cavities of a semiconductor structure. The suspended graphene films serve as electro-mechanical membranes that can be made very thin, from one or few atoms in thickness, to greatly improve the sensitivity and reliability of semiconductor nano-probe and nano-knife devices. | 2013-08-01 |
| 20130193411 | GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a graphene device may include forming a device portion including a graphene layer on the first substrate; attaching a second substrate on the device portion of the first substrate; and removing the first substrate. The removing of the first substrate may include etching a sacrificial layer between the first substrate and the graphene layer. After removing the first substrate, a third substrate may be attached on the device portion. After attaching the third substrate, the second substrate may be removed. | 2013-08-01 |
| 20130193412 | TRANSISTORS AND METHODS OF MANUFACTURING THE SAME - Transistors and methods of manufacturing the same may include a gate on a substrate, a channel layer having a three-dimensional (3D) channel region covering at least a portion of a gate, a source electrode over a first region of the channel layer, and a drain electrode over a second region of the channel layer. | 2013-08-01 |
| 20130193413 | STACKING STRUCTURE, ORGANIC SEMICONDUCTOR DEVICE, WIRING, AND DISPLAY, AND METHOD OF MANUFACTURING ORGANIC SEMICONDUCTOR DEVICE - A stacked structure including an organic layer; a conductor or a semiconductor layer; a protective layer made of an insulating material and covering at least a part of a top surface or an undersurface of the organic layer; and a plurality of grains an outside of each of which is covered with an affinity layer that has an affinity with the insulating material, the plurality of grains being dispersed in the protective layer. | 2013-08-01 |
| 20130193414 | Organic Semiconducting Material and Electronic Component - Organic semiconducting material comprising at least one matrix material and at least one doping material, wherein the doping material is selected from a [3]radialene compound, and wherein the matrix material is selected from a terphenyldiamine compound, as well as an organic component and a mixture for producing a doped semiconductor layer. | 2013-08-01 |
| 20130193415 | ORGANIC LIGHT EMITTING DIODE DISPLAY - Disclosed is an organic light emitting diode display, including a first substrate including an organic light emitting diode and a driving circuit part for driving the light emitting diode, a second substrate facing the first substrate and covering the light emitting diode and the driving circuit part, a connection unit connected to the driving circuit part and extending from the first substrate along a rear side thereof, an electronic device disposed between the connection unit and the first substrate and transmitting a signal to the driving circuit part via the connection unit, and an electromagnetic wave-shielding sheet disposed on one side of the first substrate to directly face the electronic device and including a first conductive material layer, a buffer layer formed on one side of the first conductive material layer to prevent the first substrate from breaking, and a first adhesive layer formed on the other side of the first conductive material layer. | 2013-08-01 |
| 20130193416 | ORGANIC ELECTROLUMINESCENT DEVICES AND METHODS FOR FABRICATING THE SAME - Provide is an organic electroluminescent device including an organic electroluminescent layer emitting a light and a plurality of nano-sized embossing layers stacked to improve light extraction efficiency of the emitted light. | 2013-08-01 |
| 20130193417 | Integrated Circuit and Manufacturing Method - Disclosed is an integrated circuit comprising a substrate including at least one light sensor; an interconnect structure over the substrate; at least one passivation layer over the interconnect structure, said passivation layer including a first area over the at least one light sensor; and a gas sensor such as a moisture sensor at least partially on a further area of the at least one passivation layer, wherein the gas sensor comprises a gas sensitive layer in between a first electrode and a second electrode, the gas sensitive layer further comprising a portion over the first area. A method of manufacturing such an IC is also disclosed. | 2013-08-01 |
| 20130193418 | LIGHT-EMITTING APPARATUS, IMAGE-FORMING APPARATUS, DISPLAY APPARATUS, AND IMAGE PICKUP APPARATUS - An organic EL element uses the maximum optical interference effect and satisfactorily emits light. The first optical distance L | 2013-08-01 |
| 20130193419 | ORGANIC ELECTROLUMINESCENT ELEMENT AND DISPLAY APPARATUS INCLUDING THE SAME - An organic electroluminescent element that emits red light includes an organic compound layer provided between a first electrode including a reflective metal film and a second electrode including a translucent metal film. The organic compound layer includes a light-emitting layer. The second electrode is provided on a light extraction side. An optical length L | 2013-08-01 |
| 20130193420 | THIN FILM TRANSISTOR AND METHOD FOR PRODUCING THE SAME - The present invention provides a method of manufacturing a thin film transistor of a top-contact structure with suppressed deterioration by a process which is easy and suitable for increase in area without damaging an organic semiconductor pattern. The organic semiconductor pattern is formed on a substrate. An electrode material film is formed on the substrate so as to cover the organic semiconductor pattern. A resist pattern is formed on the electrode material film. By wet etching using the resist pattern as a mask, the electrode material film is patterned. By the process, a source electrode and a drain electrode are formed. | 2013-08-01 |
| 20130193421 | Inorganic-Organic Hybrid Thin-Film Transistors Using Inorganic Semiconducting Films - Inorganic semiconducting compounds, composites and compositions thereof, and related device structures. | 2013-08-01 |
| 20130193422 | OPTICAL SENSOR AND METHOD FOR MAKING THE SAME - An optical sensor that can be produced at a low cost from inexpensive silicon fine particles as raw materials and a method for making the optical sensor are provided. | 2013-08-01 |
| 20130193423 | ELECTROACTIVE MATERIALS - A compound having Formula I, Formula II, or Formula III: | 2013-08-01 |
| 20130193424 | ELEMENT SUBSTRATE AND LIGHT EMITTING DEVICE - A light emitting device and an element substrate which are capable of suppressing variations in the luminance intensity of a light emitting element among pixels due to characteristic variations of a driving transistor without suppressing off-current of a switching transistor low and increasing storage capacity of a capacitor. According to the invention, a depletion mode transistor is used as a driving transistor. The gate of the driving transistor is fixed in its potential or connected to the source or drain thereof to operate in a saturation region with a constant current flow. A current controlling transistor which operates in a linear region is connected in series to the driving transistor, and a video signal for transmitting a light emission or non-emission of a pixel is inputted to the gate of the current controlling transistor through a switching transistor. | 2013-08-01 |
| 20130193425 | "Lighting Elements" - An OLED lighting element comprises a substrate bearing an OLED structure extending laterally over said substrate and sandwiched between first and second electrode layers. The first electrode layer defines a plurality of electrically conductive tracks and said second electrode layer comprises a substantially continuous electrically conducting layer. The OLED lighting element has an electrical bus-bar connected to said electrically conductive tracks extending substantially completely along the or each lateral edge of said lighting element. The electrically conductive tracks run in a radial direction from a laterally central location within said lighting element towards said bus-bar along said lateral edges of said lighting element. A said track subdivides into a plurality of tracks with increasing distance from said central location. This arrangement makes more efficient use of the conductive tracks. | 2013-08-01 |
| 20130193426 | USE OF ZWITTERIONIC MOLECULES FOR FORMING A HOLE OR ELECTRON TRANSPORT LAYER - The invention relates to the use of zwitterionic molecules for forming a hole or electron transport layer. The preferred zwitterionic molecules of the invention are derivatives of p-benzoquinonemonoimines. The invention is useful in the field of electronic devices in particular. | 2013-08-01 |
| 20130193427 | ORGANIC EL PANEL, DISPLAY DEVICE USING SAME, AND METHOD FOR PRODUCING ORGANIC EL PANEL - To increase light-extraction efficiency and simplify manufacturing process. An organic EL panel includes: first electrode reflecting incident light; second electrode transmitting incident light therethrough; organic light-emitting layer emitting light of corresponding color among R, G, and B colors; first functional layer including charge injection/transport layer and at least one other layer, and disposed between the first electrode and the light-emitting layer; and second functional layer disposed between the second electrode and the light-emitting layer. The charge injection/transport layers of R and G colors are equal in film thickness, and differ in film thickness from the charge injection/transport layer of the B color, the at least one other layers of R, G, and B colors are equal in film thickness, the second functional layers of R, G, and B colors are equal in film thickness, and the light-emitting layers of R, G, and B colors differ in film thickness. | 2013-08-01 |
| 20130193428 | LUMINESCENT GOLD(III) COMPOUNDS FOR ORGANIC LIGHT-EMITTING DEVICES AND THEIR PREPARATION - In one embodiment, the present invention provides a class of luminescent gold(III) compounds containing a tridentate ligand with one strong σ-donating group. The present invention also provides methods for synthesizing these compounds, as well as uses of these compounds as electrophosphorescent materials in phosphorescent organic light-emitting devices (OLEDs) to provide electroluminescence (EL). | 2013-08-01 |
| 20130193429 | ORGANIC ELECTROLUMINESCENT ELEMENT - Provided are a novel nitrogen-containing aromatic heterocyclic compound and an organic electronic device using the compound. Specifically provided is an organic electroluminescent device, including a plurality of organic layers between an anode and a cathode laminated on a substrate, in which at least one of the organic layers contains a nitrogen-containing aromatic compound represented by the following formula (1). In the formula, L represents an n+m-valent group arising from an alkane, a cycloalkane, an aromatic hydrocarbon, an aromatic heterocyclic compound, a triarylamine, or a diarylsulfone, A represents an alkyl group, a cycloalkyl group, an alkenyl group, an alkynyl group, a silyl group, an acyl group, an aromatic hydrocarbon group, or an aromatic heterocyclic group, X represents C(R) | 2013-08-01 |
| 20130193430 | OXIDE SEMICONDUCTOR, THIN FILM TRANSISTOR, AND DISPLAY DEVICE - The present invention provides an oxide semiconductor that realizes a TFT excellent in electric properties and process resistance, a TFT comprising a channel layer formed of the oxide semiconductor, and a display device equipped with the TFT. The oxide semiconductor of the present invention is an oxide semiconductor for a thin film transistor, wherein the oxide semiconductor contains Ga (gallium), In (indium), Zn (zinc), and O (oxygen) as constituent atoms, and the oxide semiconductor has Zn atomic composition satisfying the equation of 0.01≦Zn/(In+Zn)≦0.22. | 2013-08-01 |
| 20130193431 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A region containing a high proportion of crystal components and a region containing a high proportion of amorphous components are formed separately in one oxide semiconductor film. The region containing a high proportion of crystal components is formed so as to serve as a channel formation region and the other region is formed so as to contain a high proportion of amorphous components. It is preferable that an oxide semiconductor film in which a region containing a high proportion of crystal components and a region containing a high proportion of amorphous components are mixed in a self-aligned manner be formed. To separately form the regions which differ in crystallinity in the oxide semiconductor film, first, an oxide semiconductor film containing a high proportion of crystal components is formed and then process for performing amorphization on part of the oxide semiconductor film is conducted. | 2013-08-01 |
| 20130193432 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - To provide a highly reliable semiconductor device by giving stable electrical characteristics to a transistor including an oxide semiconductor film. A gate electrode layer is formed over a substrate, a gate insulating film is formed over the gate electrode layer, an oxide semiconductor film is formed over the gate insulating film, a conductive film is formed over the oxide semiconductor film, so that a region in vicinity of an interface with the oxide semiconductor film in contact with the conductive film is made amorphous, heat treatment is performed, the conductive film is then processed to form a source electrode layer and a drain electrode layer, and a part of the amorphous region in the oxide semiconductor film which is exposed by formation of the source electrode layer and the drain electrode layer is removed. | 2013-08-01 |
| 20130193433 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device having high electric characteristics and in which a capacitor is efficiently formed even if the semiconductor device has a miniaturized structure. In a top-gate (also referred to as staggered) transistor using an oxide semiconductor film as its active layer, a source electrode and a drain electrode has a two-layer structure (a first electrode film and a second electrode film). Then, a capacitor is formed using a film formed using a material and a step similar to those of the first electrode film, a gate insulating film, and a gate electrode. Accordingly, the transistor and the capacitor can be formed through the same process efficiently. Further, the second electrode is connected onto the oxide semiconductor film between a first electrode and a channel formation region of the transistor. Accordingly, resistance between source and drain electrodes can be reduced; therefore, electric characteristics of the semiconductor device can be improved. | 2013-08-01 |
| 20130193434 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized. | 2013-08-01 |
| 20130193435 | SEMICONDUCTOR DEVICE - An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit included in an LSI, a CPU, or a memory is manufactured using the transistor which is formed using an oxide semiconductor which is an intrinsic or substantially intrinsic semiconductor obtained by removal of impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than a silicon semiconductor, and is formed over a semiconductor substrate. With the transistor which is formed over the semiconductor substrate and includes the highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device whose power consumption due to leakage current is low can be realized. | 2013-08-01 |
| 20130193436 | RESIN MOLDING, SURFACE MOUNTED LIGHT EMITTING APPARATUS AND METHODS FOR MANUFACTURING THE SAME - The present invention provides a surface mounted light emitting apparatus which has long service life and favorable property for mass production, and a molding used in the surface mounted light emitting apparatus. | 2013-08-01 |
| 20130193437 | DEVICE FOR PROTECTING AN INTEGRATED CIRCUIT AGAINST BACK SIDE ATTACKS - An integrated circuit including: a semiconductor substrate of a first conductivity type having at least one well of a second conductivity type laterally delimited, on two opposite walls, by regions of the first conductivity type, defined at its surface; at least one region of the second conductivity type which extends in the semiconductor substrate under the well; and a system for detecting a variation of the substrate resistance between each association of two adjacent regions of the first conductivity type. | 2013-08-01 |
| 20130193438 | SEMICONDUCTOR DEVICE - Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device. | 2013-08-01 |
| 20130193439 | SEMICONDUCTOR DEVICE AND FLAT PANEL DISPLAY INCLUDING THE SAME - A semiconductor device includes a semiconductor layer on a substrate, a gate electrode electrically insulated from the semiconductor layer by a gate insulating layer, an insulating layer on the gate insulating layer and on the gate electrode, and a source electrode and a drain electrode on the insulating layer, the source and drain electrode being connected to the semiconductor layer. The source electrode overlaps at least a part of the gate electrode. The source electrode, the insulating layer, and the gate electrode overlap each other so as to provide a capacitor. | 2013-08-01 |
| 20130193440 | Display Device and Manufacturing Method Thereof - A display device in which a plurality of gate wires and a plurality of drain wires that intersect the gate wires are provided, and thin film transistors connected to the gate wires and the drain wires are formed for respective pixel regions. At least one of the gate wires, the drain wires, and lead wires drawn from the gate wires or the drain wires is formed of a light-transmitting patterned conductive film. The light-transmitting patterned conductive film is formed of at least a first light-transmitting patterned conductive film, and a second light-transmitting patterned conductive film laminated on the first light-transmitting patterned conductive film. The second light-transmitting patterned conductive film is formed of a conductive film for coating only the surface of the first light-transmitting patterned conductive film including its side wall surface. | 2013-08-01 |
| 20130193441 | Semiconductor Substrates Using Bandgap Material Between III-V Channel Material and Insulator Layer - Improved semiconductor substrates are provided that employ a wide bandgap material between the channel and the insulator. A semiconductor substrate comprises a channel layer comprised of a III-V material; an insulator layer; and a wide bandgap material between the channel layer and the insulator layer, wherein a conduction band offset (ΔE | 2013-08-01 |
| 20130193442 | Light Emitting Device And Method For Manufacturing The Same - Provided are a light emitting device and a method for manufacturing the same. The light emitting device comprises a first conductive type semiconductor layer, an active layer, a second conductive type semiconductor layer, and a light extraction layer. The active layer is formed on the first conductive type semiconductor layer. The second conductive type semiconductor layer is formed on the active layer. The light extraction layer is formed on the second conductive type semiconductor layer. The light extraction layer has a refractive index smaller than or equal to a refractive index of the second conductive type semiconductor layer. | 2013-08-01 |
| 20130193443 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FORMANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting device includes a semiconductor stacked unit and a silver layer. The semiconductor stacked unit includes a light emitting layer, and a semiconductor layer containing gallium provided on the light emitting layer. The silver layer contacts the semiconductor layer. A peak height belonging to a (100) plane of silver is not more than 3% of a peak height belonging to a (111) plane in an X-ray analysis. A detected intensity of a complex of gallium and nitrogen atoms at a first position is 1/100 of a maximum value in the semiconductor layer in a mass analysis. A detected intensity of gallium atoms at a second position at 40 nm distance from the first position is higher than 0.4% and lower than 3.8% of a maximum value of the detected intensity of gallium atoms in the semiconductor layer in the mass analysis. | 2013-08-01 |
| 20130193444 | HIGH VOLTAGE SWITCHING DEVICES AND PROCESS FOR FORMING SAME - The present invention relates to various switching device structures including Schottky diode, P-N diode, and P-I-N diode, which are characterized by low defect density, low crack density, low pit density and sufficient thickness (>2.5 um) GaN layers of low dopant concentration (<1E16 cm | 2013-08-01 |
| 20130193445 | SOI STRUCTURES INCLUDING A BURIED BORON NITRIDE DIELECTRIC - Boron nitride is used as a buried dielectric of an SOI structure including an SOI layer and a handle substrate. The boron nitride is located between an SOI layer and a handle substrate. Boron nitride has a dielectric constant and a thermal expansion coefficient close to silicon dioxide. Yet, boron nitride has a wet as well as a dry etch resistance that is much better than silicon dioxide. In the SOI structure, there is a reduced material loss of boron nitride during multiple wet and dry etches so that the topography and/or bridging are not an obstacle for device integration. Boron nitride has a low dielectric constant so that devices built in SOI active regions do not suffer from a charging effect. | 2013-08-01 |
| 20130193446 | FINFET AND METHOD OF FABRICATING THE SAME - The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a major surface; a first fin and a second fin extending upward from the substrate major surface to a first height; an insulation layer comprising a top surface extending upward from the substrate major surface to a second height less than the first height, whereby portions of the fins extend beyond the top surface of the insulation layer; each fin covered by a bulbous epitaxial layer defining an hourglass shaped cavity between adjacent fins, the cavity comprising upper and lower portions, wherein the epitaxial layer bordering the lower portion of the cavity is converted to silicide. | 2013-08-01 |
| 20130193447 | SILICON CARBIDE SEMICONDUCTOR DEVICE - A silicon carbide semiconductor device includes an insulation film, and a silicon carbide layer having a surface covered with the insulation film. The surface includes a first region. The first region has a first plane orientation at least partially. The first plane orientation is any of a (0-33-8) plane, (30-3-8) plane, (-330-8) plane, (03-3-8) plane, (-303-8) plane, and (3-30-8) plane. | 2013-08-01 |
| 20130193448 | PATTERNED SUBSTRATE AND STACKED LIGHT EMITTING DIODE - A patterned substrate is provided, including: a substrate having a (0001) crystal plane and a plurality of alternatively arranged recess structures therein, thereby forming a plurality of alternatively arranged top surfaces; and a dielectric barrier layer covering the bottom surface and/or the sidewalls of the recess structures. Each of the alternatively arranged recess structures includes a bottom surface and a plurality of sidewalls surrounding the bottom surface. | 2013-08-01 |
| 20130193449 | PRODUCTION OF AN INTEGRATED CIRCUIT INCLUDING ELECTRICAL CONTACT ON SiC - Production of an integrated circuit including an electrical contact on SiC is disclosed. One embodiment provides for production of an electrical contact on an SiC substrate, in which a conductive contact is produced on a boundary surface of the SiC substrate by irradiation and absorption of a laser pulse on an SiC substrate. | 2013-08-01 |
| 20130193450 | OPTOELECTRONIC SEMICONDUCTOR CHIP AND METHOD FOR PRODUCING SAME - An optoelectronic semiconductor chip includes a semiconductor layer stack and a radiation exit face or radiation entrance face, wherein the semiconductor layer stack includes an active layer that generates or receives electromagnetic radiation, and a plurality of nanostructures arranged in the semiconductor layer stack and/or on the radiation exit or entrance face, at least some of the nanostructures including at least one substructure. | 2013-08-01 |
| 20130193451 | Photo-Coupler - A photo-coupler is provided. The photo-coupler comprises a plurality of photo-coupling modules, a third package, a power lead and a ground lead. Each of the photo-coupling modules includes a light emitting component, a photosensitive component, a first transparent package and a second transparent package. In each of the photo-coupler modules, the photosensitive component is disposed opposite the light emitting component for receiving the light emitted by the light emitting component. In addition, the first transparent package encloses the light emitting component, while the second transparent package encloses the light emitting component and the first transparent package. The third package encloses both of the second transparent packages to block light from the outside. The photosensitive components electrically connect to the common power lead respectively and electrically connect to the common ground lead respectively inside the third package. | 2013-08-01 |
| 20130193452 | LIGHT EMITTING DIODE SYSTEM AND METHODS RELATING THERETO - A light emitting diode system is disclosed having a bent layered structure conformed to a least a portion of a self-supporting three dimensional heat sink and maintains a breakdown voltage from 150 to 350 V/micron. The bent layered structure has an electrical circuit, a dielectric layer and at least one LED package, LED chip on board or mixtures thereof attached to the electrical circuit. The dielectric layer is a polyimide derived from at least 70 mole percent aromatic dianhydride based upon total dianhydride content of the polyimide and at least 70 mole percent aromatic diamine based upon total diamine content of the polyimide. | 2013-08-01 |
| 20130193453 | Light Emitting Diode (LED) Arrays Including Direct Die Attach And Related Assemblies - An electronic device may include a packaging substrate having a packaging face, and the packaging substrate may include positive and negative electrically conductive pads on the packaging face. A plurality of light emitting diodes may be electrically and mechanically coupled to the packaging face of the packaging substrate, with the plurality of light emitting diodes being electrically coupled between the positive and negative electrically conductive pads on the packaging face. A continuous optical coating may be provided on the plurality of light emitting diodes and on the packaging face of the packaging substrate so that the plurality of light emitting diodes are between the optical coating and the packaging substrate. | 2013-08-01 |
| 20130193454 | Electric Resistance Element Suitable for Light-Emitting Diode, Laser Diodes, or Photodetectors - An electric resistance element comprising: a base body, which is formed with a semiconductor material; a first contact element, which is electrically conductively connected to the base body; and a second contact element, which is electrically conductively connected to the base body. The base body has a first main surface into which a cutout is introduced. The first contact element is electrically conductively connected to the base body at least in places in the cutout. The base body has a second main surface, which is arranged in a manner lying opposite the first main surface. The second contact element is electrically conductively connected to the base body at least in places at the second main surface | 2013-08-01 |
| 20130193455 | LIGHT EMITTER PACKAGES AND DEVICES HAVING IMPROVED WIRE BONDING AND RELATED METHODS - Light emitter packages and devices having improved wire bonding and related methods are disclosed. In one embodiment a light emitter package can include at least one light emitting diode (LED) chip electrically connected to an electrical element via a wire bond. The wire bond can be provided at improved wire bonding parameters such as a temperature of approximately 150° C. or less, a bonding time of approximately 100 ms or less, a power of approximately 1700 mW or less, and a force of approximately 100 grams force (gf) or less, or combinations thereof. | 2013-08-01 |
