31st week of 2014 patent applcation highlights part 15 |
Patent application number | Title | Published |
20140209876 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR UNIT INCLUDING THE SAME - A solid-state image pickup unit including a pixel section having a plurality of unit pixels two-dimensionally arranged in a matrix formation, wherein a unit pixel includes a conductive region of a first conductivity type having a surface adjacent to a multilayer wiring layer, a charge accumulation region of a second conductivity type formed within the first conductive region, wherein the charge accumulation region is separated from the surface of the conductive region adjacent to the multilayer wiring layer by a separation section, and a contact disposed in the conductive region, the contact electrically connecting the charge accumulation region and an external wire of the multilayer wiring layer. | 2014-07-31 |
20140209877 | TFT Substrate Including Barrier Layer, Organic Light-Emitting Display Device Including the TFT Substrate, and Method of Manufacturinq the TFT Substrate - A thin-film transistor (TFT) substrate includes a flexible substrate. A first barrier layer is formed on the flexible substrate. The first barrier layer includes a first silicon oxide layer and a first silicon nitride layer. A second barrier layer is formed on the first barrier layer. The second barrier layer includes a second silicon oxide layer and a second silicon nitride layer. A TFT layer is formed on the second barrier layer. The second silicon oxide layer is disposed adjacent to the TFT layer. | 2014-07-31 |
20140209878 | AMINE-BASED COMPOUND AND ORGANIC LIGHT EMITTING DIODE COMPRISING THE SAME - An amine-based compound and an organic light-emitting diode including the same are provided. | 2014-07-31 |
20140209879 | PREPARATION AND PROPERTIES OF PERYLENE AND NAPHTHALENE POLYIMIDES AND OTHER RIGID CONJUGATED POLYMERS VIA SOLUBLE AMIDE-ESTER PRECURSOR - This invention relates to a method for making soluble precursors to imides, polyimides, and polymers containing imide groups, and a method of making thin films of the same by solution casting and then removing the solubilizing group to produce thermally stable and insoluble materials. | 2014-07-31 |
20140209880 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting diode includes a substrate, a first electrode, a second electrode facing the first electrode, and an organic layer between the first electrode and the second electrode. The organic layer includes an emission layer, and the emission layer includes a first compound represented by Formula 1 and a second compound represented by Formula 100. | 2014-07-31 |
20140209881 | Self-Light Emitting Device and Electrical Appliance Using the Same - A self-light emitting device and an electrical appliance including the same are provided, in which extracting efficiency of light from a light emitting element, especially in an EL element, can be improved. A light scattering body formed by etching a transparent film is provided on an insulator so that the extracting efficiency of light can be improved, and the self-light emitting device with high efficiency of light emission can be provided. | 2014-07-31 |
20140209882 | SELF-LIGHT EMITTING DISPLAY UNIT AND ELECTRONIC DEVICE - A self-light emitting display unit capable of improving manufacturing yield is provided. Sizes of color pixel circuits corresponding to pixels for R, G, and B are respectively set unevenly within a pixel circuit according to a magnitude ratio of drive currents which allow color self-light emitting elements in the pixel to emit with a same light emission luminance. Thereby, the pattern densities of color pixel circuits respectively corresponding to the pixels for R, G, and B become even to each other, and the pattern defect rate as the whole pixel circuit is decreased. | 2014-07-31 |
20140209883 | VERTICAL ELECTRO-OPTICAL COMPONENT AND METHOD OF FABRICATING THE SAME - A vertical electro-optical component and a method for forming the same are provided. The vertical electro-optical component includes a substrate, a first electrode layer formed on the substrate, a patterned insulating layer formed on the first electrode layer, a metal layer formed on the patterned insulating layer, a semiconductor layer formed on the first electrode layer, and a second electrode layer formed on the semiconductor layer, wherein the semiconductor layer encapsulates the patterned insulating layer and the metal layer. The vertical electro-optical component thus has a low operational voltage of a vertical transistor and a high reaction speed of a photo diode, and may be used to form light-emitting transistors. | 2014-07-31 |
20140209884 | NITROGEN-CONTAINING HETEROCYCLIC COMPOUNDS AND ORGANIC ELECTRONIC DEVICE COMPRISING THE SAME - The present disclosure provides a nitrogen-containing heterocyclic compound and an organic electronic device comprising the same. The organic electronic device according to the present disclosure shows excellent characteristics in terms of efficiency, driving voltage and lifespan. | 2014-07-31 |
20140209885 | ORGANIC ELECTROLUMINESCENT ELEMENT - Provided is an organic electroluminescent device (organic EL device) which has improved luminous efficiency and a simple configuration, while ensuring sufficient driving stability. This organic electroluminescent device includes a light-emitting layer between an anode and a cathode that are laminated on a substrate. The light-emitting layer contains a phosphorescent light-emitting dopant, and a carbazole compound represented by the following formula (1) as a host material. In the formula (1), E represents oxygen or sulfur, and R | 2014-07-31 |
20140209886 | ORGANIC ELECTROLUMINESCENCE ELEMENT, ILLUMINATION DEVICE AND DISPLAY DEVICE - Provided are an organic electroluminescence element, an illumination device, and a display device having lower driving voltage and excellent luminous efficiency. An organic electroluminescence element has a supporting substrate; and a cathode, a light emitting layer and an adjacent layer provided on the supporting substrate, wherein the adjacent layer is arranged adjacent to the outer side of the cathode (i.e., the side opposite to the light emitting layer), wherein the cathode is a transparent layer containing a metal and having a film thickness of 2 nm or more but less than 10 nm; and wherein the adjacent layer has a refractive index of between 1.6 and 1.95, a film thickness of between 15 nm and 180 nm, and contains no light scattering particle. | 2014-07-31 |
20140209887 | ORGANIC LIGHT-EMITTING DIODE DEVICE - An OLED device includes: a transparent substrate; a light-emitting stack including an anode layer, a cathode layer, and a functional layer, the anode layer including anode units, each of which has first and second anode elements that extend in a column direction and that are aligned with and spaced apart from each other along a row direction transverse to the column direction; an anode-connecting metallic layer stacked on the light-emitting stack; a cathode-connecting metallic layer stacked on the light-emitting stack; and bridging lines disposed in the light-emitting stack and extending in the row direction such that the first and second anode elements are electrically connected to each other through a respective one of the bridging lines. | 2014-07-31 |
20140209888 | HIGH RESOLUTION LOW POWER CONSUMPTION OLED DISPLAY WITH EXTENDED LIFETIME - Arrangements of pixel components that allow for full-color devices, while using emissive devices that use blue color altering layers in conjunction with blue emissive regions, that emit at not more than two colors, and/or that use limited number of color altering layers, are provided. Devices disclosed herein also may be achieved using simplified fabrication techniques compared to conventional side-by-side arrangements, because fewer masking steps may be required. | 2014-07-31 |
20140209889 | DISPLAY AND METHOD OF MANUFACTURING THE SAME - A display includes: a light-emitting element formed by laminating a first electrode layer, an organic layer including a light-emitting layer and a second electrode layer in order on a base; and an auxiliary wiring layer being arranged so as to surround the organic layer and being electrically connected to the second electrode layer, in which the auxiliary wiring layer includes a two-layer configuration including a first conductive layer and a second conductive layer, the first conductive layer has lower contact resistance to the second electrode layer than that of the second conductive layer, the two-layer configuration in the auxiliary wiring layer is formed so that an end surface of the second conductive layer is recessed inward from an end surface of the first conductive layer, thereby a part of a top surface of the first conductive layer is in contact with the second electrode layer. | 2014-07-31 |
20140209890 | ORGANIC ELECTROLUMINESCENT LIGHTING DEVICE AND METHOD FOR MANUFACTURING SAME - An organic electroluminescent lighting device includes an organic electroluminescent element which has a first electrode, a light-emitting layer, and a second electrode, which is formed on a surface of a base substrate and which is sealed with an opposed substrate. The organic electroluminescent lighting device further includes an auxiliary electrode that includes a transparent conductive layer made of optically-transparent electrode material, a conductive resin layer made of electric conductive resin, and a metal film layer made of metal having higher electric conductivity than that of the material of the transparent conductive layer, which are stacked in this order on the surface of the base substrate. The auxiliary electrode is formed on the surface of the base substrate so as to be across an opening edge of the opposed substrate. The auxiliary electrode is formed with a block structure configured to block moisture permeation through the conductive resin layer from outside. | 2014-07-31 |
20140209891 | ELECTRO LUMINESCENCE PANEL AND METHOD FOR MANUFACTURING ELECTRO LUMINESCENCE PANEL - The present invention provides an organic EL panel and a manufacturing method of the organic EL layer which can slow the reduction in the light emission lifetime of an organic layer and allow a short-circuit defect to be repaired. Organic EL elements include: an organic EL element including a short-circuit portion, and an altered portion formed to be highly resistive by irradiating a cathode with a laser beam; and an organic EL element which does not include the short-circuit portion. In the organic EL element, an organic EL layer emits light when a voltage higher than or equal to a first voltage is applied. In the organic EL element, the organic EL layer emits light when a voltage higher than equal to a second voltage that is higher than the first voltage is applied. | 2014-07-31 |
20140209892 | SELECTOR FOR LOW VOLTAGE EMBEDDED MEMORY - Techniques, materials, and circuitry are disclosed which enable low-voltage, embedded memory applications. In one example embodiment, an embedded memory is configured with a bitcell having a memory element and a selector element serially connected between an intersection of a wordline and bitline. The selector element can be implemented, for instance, with any number of crystalline materials that exhibit an S-shaped current-voltage (IV) curve, or that otherwise enables a snapback in the selector voltage after the threshold criteria is exceeded. The snapback of the selector is effectively exploited to accommodate the ON-state voltage of the selector under a given maximum supply voltage, wherein without the snapback, the ON-state voltage would exceed that maximum supply voltage. In some example embodiments, the maximum supply voltage is less than 1 volt (e.g., 0.9 volts or less). | 2014-07-31 |
20140209893 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first semiconductor layer of a nitride semiconductor formed on a substrate; a second semiconductor layer of a nitride semiconductor formed on the first semiconductor layer; and a gate electrode, a source electrode, a drain electrode, and a hole extraction electrode, each of which is formed on the second semiconductor layer, wherein between the source electrode and the hole extraction electrode or in a region right under the source electrode, the first semiconductor layer and the second semiconductor layer form a vertical interface approximately perpendicular to a surface of the substrate, and a surface of the first semiconductor layer configured to form the vertical interface is an N-polar surface. | 2014-07-31 |
20140209894 | THIN FILM TRANSISTOR AND METHOD FOR FABRICATING THE SAME - Disclosed is a thin film transistor including a light-shielding layer made of the same material as a semiconductor layer on a substrate, and a method for fabricating the same. The thin film transistor includes a substrate, a light-shielding layer and a buffer layer formed on the substrate in this order, a semiconductor layer formed on the buffer layer, the semiconductor layer formed of the same material as the light-shielding layer, a gate insulating film and a gate electrode formed on the semiconductor layer in this order, an interlayer insulating film formed on the substrate such that it covers the gate electrode, the interlayer insulating film comprising a source contact hole and a drain contact hole exposing source and drain areas of the semiconductor layer, respectively, and a source electrode and a drain electrode electrically connected to the semiconductor layer through the source contact hole and the drain contact hole. | 2014-07-31 |
20140209895 | ARRAY SUBSTRATE, FABRICATION METHOD THEREOF AND DISPLAY DEVICE - The invention provides an array substrate, a fabrication method thereof and a display device. The array substrate comprises a base substrate; a gate layer which is disposed on the base substrate and comprises a gate; a gate insulating layer disposed on the gate layer; a source layer which is disposed on the gate insulating layer and comprises a source; a metal oxide semiconductor layer which is disposed on the source layer and the gate insulating layer and comprises an active layer, wherein the source is in direct contact with the active layer; and a pixel electrode layer in direct contact with the active layer. A position where the gate is formed in the gate layer corresponds to a position between the source and a contacting portion of the pixel electrode layer with the active layer. | 2014-07-31 |
20140209896 | METHOD FOR PROCESSING OXIDE SEMICONDUCTOR LAYER - A method for processing an oxide semiconductor containing indium, gallium, and zinc is provided. In the method, the oxide semiconductor layer comprises a plurality of excess oxygen, a first oxygen vacancy that is close to first indium and captures first hydrogen, and a second oxygen vacancy that is close to second indium and captures second hydrogen, the first hydrogen captured by the first oxygen vacancy is bonded to one of a plurality of excess oxygen to so that a hydroxyl is formed; the hydroxyl is bonded to the second hydrogen captured by the second oxygen vacancy to release as water; and then, the first oxygen vacancy captures one of excess oxygen and the second oxygen vacancy captures one of excess oxygen. | 2014-07-31 |
20140209897 | SEMICONDUCTOR DEVICE - A semiconductor device having a high aperture ratio and including a capacitor capable of increasing the charge capacity is provided. A semiconductor device includes a transistor over a substrate, a first light-transmitting conductive film over the substrate, an oxide insulating film covering the transistor and having an opening over the first light-transmitting conductive film, a nitride insulating film over the oxide insulating film and in contact with the first light-transmitting conductive film in the opening, a second light-transmitting conductive film connected to the transistor and having a depressed portion in the opening, and an organic resin film with which the depressed portion of the second light-transmitting conductive film is filled. | 2014-07-31 |
20140209898 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SEMICONDUCTOR DEVICE - When an oxide semiconductor film is microfabricated to have an island shape, with the use of a hard mask, unevenness of an end portion of the oxide semiconductor film can be suppressed. Specifically, a hard mask is formed over the oxide semiconductor film, a resist is formed over the hard mask, light exposure is performed to form a resist mask, the hard mask is processed using the resist mask as a mask, the oxide semiconductor film is processed using the processed hard mask as a mask, the resist mask and the processed hard mask are removed, a source electrode and a drain electrode are formed in contact with the processed oxide semiconductor film, a gate insulating film is formed over the source electrode and the drain electrode, and a gate electrode is formed over the gate insulating film, the gate electrode overlapping with the oxide semiconductor film. | 2014-07-31 |
20140209899 | METHOD FOR PROCESSING OXIDE SEMICONDUCTOR FILM AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - To provide an oxide semiconductor film including a low-resistance region, which can be applied to a transistor. To provide a transistor including the oxide semiconductor film, which can perform at high speed. To provide a high-performance semiconductor device including the transistor including the oxide semiconductor film, which can perform at high speed, with high yield. A film having a reducing property is formed over the oxide semiconductor film. Next, part of oxygen atoms are transferred from the oxide semiconductor film to the film having a reducing property. Next, an impurity is added to the oxide semiconductor film through the film having a reducing property and then, the film having a reducing property is removed, so that a low-resistance region is formed in the oxide semiconductor film. | 2014-07-31 |
20140209900 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - One object is to have stable electrical characteristics and high reliability and to manufacture a semiconductor device including a semi-conductive oxide film. Film formation is performed by a sputtering method using a target in which gallium oxide is added to a material that is easy to volatilize compared to gallium when the material is heated at 400° C. to 700° C. like zinc, and a formed film is heated at 400° C. to 700° C., whereby the added material is segregated in the vicinity of a surface of the film and the oxide is crystallized. Further, a semi-conductive oxide film is deposited thereover, whereby a semi-conductive oxide having a crystal which succeeds a crystal structure of the oxide that is crystallized by heat treatment is formed. | 2014-07-31 |
20140209901 | DISPLAY DEVICE INCLUDING TRANSISTOR AND MANUFACTURING METHOD THEREOF - An object is to provide a display device which operates stably with use of a transistor having stable electric characteristics. In manufacture of a display device using transistors in which an oxide semiconductor layer is used for a channel formation region, a gate electrode is further provided over at least a transistor which is applied to a driver circuit. In manufacture of a transistor in which an oxide semiconductor layer is used for a channel formation region, the oxide semiconductor layer is subjected to heat treatment so as to be dehydrated or dehydrogenated; thus, impurities such as moisture existing in an interface between the oxide semiconductor layer and the gate insulating layer provided below and in contact with the oxide semiconductor layer and an interface between the oxide semiconductor layer and a protective insulating layer provided on and in contact with the oxide semiconductor layer can be reduced. | 2014-07-31 |
20140209902 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - An object is to reduce the manufacturing cost of a semiconductor device. An object is to improve the aperture ratio of a semiconductor device. An object is to make a display portion of a semiconductor device display a higher-definition image. An object is to provide a semiconductor device which can be operated at high speed. The semiconductor device includes a driver circuit portion and a display portion over one substrate. The driver circuit portion includes: a driver circuit TFT in which source and drain electrodes are formed using a metal and a channel layer is formed using an oxide semiconductor; and a driver circuit wiring formed using a metal. The display portion includes: a pixel TFT in which source and drain electrodes are formed using an oxide conductor and a semiconductor layer is formed using an oxide semiconductor; and a display wiring formed using an oxide conductor. | 2014-07-31 |
20140209903 | THIN FILM TRANSISTOR PANEL HAVING AN ETCH STOPPER ON SEMICONDUCTOR - A thin film transistor panel includes an insulating substrate, a gate insulating layer disposed on the insulating substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopper disposed on the oxide semiconductor layer, and a source electrode and a drain electrode disposed on the etch stopper. | 2014-07-31 |
20140209904 | INTEGRATED TEST CIRCUIT AND METHOD FOR MANUFACTURING AN INTEGRATED TEST CIRCUIT - An integrated test circuit, including a plurality of test structure elements, wherein each test structure element includes at least a supply line and a test line; a plurality of select transistors, wherein each select transistor is assigned to one corresponding test structure element, and wherein each select transistor includes a first controlled region, a second controlled region, and a control region, wherein the second controlled region of each select transistor is respectively connected to the supply line of the corresponding test structure element, so that each select transistor is unambiguously assigned to the corresponding test structure element; and a plurality of contact pads, connected to respective first controlled regions and control regions of the plurality of select transistors, such that each test structure element of the plurality of test structure elements can be individually addressed by the plurality of contact pads. | 2014-07-31 |
20140209905 | Integrated Circuit, Semiconductor Device and Method of Manufacturing a Semiconductor Device - An integrated circuit including a semiconductor device has a power component including a plurality of trenches in a cell array, the plurality of trenches running in a first direction, and a sensor component integrated into the cell array of the power component and including a sensor cell having an area which is smaller than an area of the cell array of the power component. The integrated circuit further includes isolation trenches disposed between the sensor component and the power component, an insulating material being disposed in the isolation trenches. The isolation trenches run in a second direction that is different from the first direction. | 2014-07-31 |
20140209906 | Method of Fabricating GOI Silicon Wafer, GOI Silicon Wafer and GOI Detection Method - The invention discloses a method of fabricating a GOI silicon wafer, a GOI silicon wafer, and a method of GOI detection on the fabricated GOI silicon wafer, where the method of fabricating a GOI silicon wafer includes: in a process of fabricating a trench-type VDMOS, after a trench is formed and a gate oxide layer is grown, a poly-silicon layer is grown; and after the poly-silicon layer is grown, a mask of a metal layer is aligned with a silicon substrate with the poly-silicon layer grown, where the mask of the metal layer is a mask used in formation of the metal layer in the process of fabricating the VDMOS; and at least one pattern for GOI detection is formed on the silicon substrate with the poly-silicon layer grown, through the aligned mask of the metal layer in a photo-lithography to form a GOI silicon wafer. With the technical solution here according to an embodiment of the invention, an error between the GOI silicon wafer and the VDMOS device can be lowered, good accuracy can be achieved, and a resource can be saved effectively, and furthermore the accuracy in a result of GOI detection can be well improved. | 2014-07-31 |
20140209907 | SEMICONDUCTOR APPARATUS AND STACKED SEMICONDUCTOR APPARATUS FOR CHECKING FORMATION AND CONNECTION OF THROUGH SILICON VIA - A semiconductor apparatus includes a TSV formed to be electrically connected with another chip and a TSV test unit configured to check a capacitance component of the TSV to generate a TSV abnormality signal. | 2014-07-31 |
20140209908 | FLATTENED SUBSTRATE SURFACE FOR SUBSTRATE BONDING - Methods for bonding substrate surfaces, bonded substrate assemblies, and design structures for a bonded substrate assembly. Device structures of a product chip are formed using a first surface of a device substrate. A wiring layer of an interconnect structure for the device structures is formed on the product chip. The wiring layer is planarized. A temporary handle wafer is removably bonded to the planarized wiring layer. In response to removably bonding the temporary handle wafer to the planarized first wiring layer, a second surface of the device substrate, which is opposite to the first surface, is bonded to a final handle substrate. The temporary handle wafer is then removed from the assembly. | 2014-07-31 |
20140209909 | SEMICONDUCTOR DEVICE - A semiconductor device is disclosed allowing detection of a connection state of a Through Silicon Via (TSV) at a wafer level. The semiconductor device includes a first line formed over a Through Silicon Via (TSV), a second line formed over the first line, and a first power line and a second power line formed over the same layer as the second line. Therefore, the semiconductor device can screen not only a chip-to-chip connection state after packaging completion, but also a connection state between the TSV and the chip at a wafer level, so that unnecessary costs and time encountered in packaging of a defective chip are reduced. | 2014-07-31 |
20140209910 | DISPLAY DEVICE - A display device includes a signal line disposed on a substrate. A signal input line is disposed on the substrate and connected to a driver. A first insulating layer is disposed on the signal line. A second insulating layer is disposed on the signal input line and the first insulating layer. First contact holes penetrate the first insulating layer and the second insulating layer and expose a portion of the signal line. Second contact holes penetrate the second insulating layer and expose a portion of the signal input line. A connecting member connects the signal line and the signal input line through the first and the second contact holes and is disposed on the second insulating layer. The first and the second contact holes are alternately arranged in the second insulating layer. | 2014-07-31 |
20140209911 | THIN-FILM TRANSISTOR DEVICE - A thin-film transistor device includes a gate electrode formed above a substrate, a gate insulating film formed on the gate electrode, a crystalline silicon thin film that is formed above the gate insulating film and has a channel region, an amorphous silicon thin film formed on the crystalline silicon thin film, and a source electrode and a drain electrode that are formed above the channel region, and the crystalline silicon thin film has a half-width of a Raman band corresponding to a phonon mode specific to the crystalline silicon thin film of 5.0 or more and less than 6.0 cm | 2014-07-31 |
20140209912 | PIXEL UNIT AND METHOD OF MANUFACTURING THE SAME, ARRAY SUBSTRATE AND DISPLAY DEVICE - Embodiments of the present invention provide a method of manufacturing a pixel unit, in which only a single patterning process and a single doping process are performed on a polysilicon layer so as to form heavily doped regions of a thin film transistor and a lower electrode of a storage capacitor respectively, thereby reducing numbers of photolithography and masking processes required to manufacture a LTPS-TFT, shortening time periods for development and mass production, and reducing complexity of processes as well as monitoring difficulty, and decreasing the production cost. The present invention further provides a pixel unit manufactured according to the method, an array substrate and a display device including the same. | 2014-07-31 |
20140209913 | Array Substrate And Display Device Comprising The Same - An array substrate, which is formed with a gate electrode ( | 2014-07-31 |
20140209914 | DISPLAY UNIT, METHOD OF MANUFACTURING THE SAME, AND ELECTRONIC APPARATUS - A display unit includes: a display layer including a pixel electrode; a semiconductor layer provided in a layer below the display layer, the semiconductor layer including a wiring layer that includes a material removable by an etchant by which the pixel electrode is also removable; and a terminal section configured to electrically connect the semiconductor layer to an external circuit, the terminal section including a first electrically-conductive layer made of a material same as a material of the wiring layer. | 2014-07-31 |
20140209915 | THIN FILM TRANSISTOR ARRAY PANEL AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) array panel and a manufacturing method thereof are disclosed. A contact hole may be formed to expose a pad disposed on a substrate of the TFT array panel. A first layer of a connecting member is formed with the same layer as a first field generating electrode and is disposed in the contact hole. A second passivation layer is disposed in the TFT array panel, but is removed at a region where the contact hole is formed and portions of the second passivation layer that cover the first layer of the connecting member. A second layer of the connecting member is formed on the first layer of the connecting member. | 2014-07-31 |
20140209916 | Semiconductor Device and A Method of Manufacturing the Same - A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained. | 2014-07-31 |
20140209917 | DISPLAY DEVICE WITH THRESHOLD CORRECTION - A display device comprises a first pixel circuit and a second pixel circuit adjacent to the first pixel circuit along a first direction. The first pixel circuit includes a first transistor and a first electro-optic element, and the second pixel circuit includes a second transistor and a second electro-optic element. A power supply line extends along the first direction. A connection wiring is connected between the first transistor and the second transistor, and is connected to the power supply line via a contact portion having at least two contact holes. | 2014-07-31 |
20140209918 | Thick ALN Inter-Layer for III-Nitride Layer on Silicon Substrate - The present disclosure relates to a gallium-nitride (GaN) transistor device having a composite gallium nitride layer with alternating layers of GaN and aluminum nitride (AlN). In some embodiments, the GaN transistor device has a first GaN layer disposed above a semiconductor substrate. An AlN inter-layer is disposed on the first GaN layer. A second GaN layer is disposed on the AlN inter-layer. The AlN inter-layer allows for the thickness of the GaN layer to be increased over continuous GaN layers, mitigating bowing and cracking of the GaN substrate, while improving the breakdown voltage of the disclosed GaN device. | 2014-07-31 |
20140209919 | METHOD OF IMPLANTING DOPANTS INTO A GROUP III-NITRIDE STRUCTURE AND DEVICE FORMED - A method including forming a III-V compound layer on a substrate and implanting a main dopant in the III-V compound layer to form source and drain regions. The method further includes implanting a group V species into the source and drain regions. A semiconductor device including a substrate and a III-V compound layer over the substrate. The semiconductor device further includes source and drain regions in the III-V layer, wherein the source and drain regions comprises a first dopant and a second dopant, and the second dopant comprises a group V material. | 2014-07-31 |
20140209920 | High Electron Mobility Transistor Structure - The present disclosure relates to a channel layer of bi-layer of gallium nitride (GaN) within a HEMT. A first breakdown voltage layer of GaN is disposed beneath an active layer of the HEMT. A second breakdown voltage layer of GaN is disposed beneath the first breakdown voltage layer, wherein the first resistivity value is less than the second resistivity value. An increased resistivity of the second breakdown voltage layer results from an increased concentration of carbon dopants which increases the breakdown voltage in the second breakdown voltage layer, but can degrade the crystal structure. To alleviate this degradation, a crystal adaptation layer is disposed beneath the second breakdown voltage layer and configured to lattice-match to the second breakdown voltage layer of GaN. As a result, the HEMT achieves a high breakdown voltage without any associated degradation to the first breakdown voltage layer, wherein a channel of the HEMT resides. | 2014-07-31 |
20140209921 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: an n-type semiconductor layer; a light emitting layer alternately laminating plural barrier layers and plural well layers; and a p-type semiconductor layer, wherein the light emitting layer includes three or more well layers and four or more barrier layers, each well layer being sandwiched by the barrier layers, one barrier layer contacting the n-type semiconductor layer, and another barrier layer contacting the p-type semiconductor layer, the well layers include plural n-side well layers from the n-type semiconductor layer side and one p-side well layer on the p-type semiconductor layer side, and a V-shaped concave portion including inclined surfaces is generated in the light emitting layer, and in at least one of the n-side well layers, a concentration of atoms of In on the inclined surface is not more than 50% of a concentration of atoms of In in the n-side well layer. | 2014-07-31 |
20140209922 | SEMICONDUCTOR DEVICE - A high electron mobility transistor having a channel layer, electron supply layer, source electrode, and drain electrode is included so as to have a cap layer formed on the electron supply layer between the source and drain electrodes and having an inclined side surface, an insulating film having an opening portion on the upper surface of the cap layer and covering the side surface thereof, and a gate electrode is formed in the opening portion and extending, via the insulating film, over the side surface of the cap layer on the drain electrode side. The gate electrode having an overhang on the drain electrode side can reduce the peak electric field. | 2014-07-31 |
20140209923 | OPTOELECTRONIC DEVICES INCORPORATING SINGLE CRYSTALLINE ALUMINUM NITRIDE SUBSTRATE - The invention provides an optoelectronic device adapted to emit ultraviolet light, including an aluminum nitride single crystalline substrate, wherein the dislocation density of the substrate is less than about 10 | 2014-07-31 |
20140209924 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor device which reduces a source resistance and a manufacturing method for the same are provided. The semiconductor device has a nitride based compound semiconductor layer arranged on a substrate, an active region which has an aluminum gallium nitride layer arranged on the nitride based compound semiconductor layer, and a gate electrode, source electrode and drain electrode arranged on the active region. The semiconductor device has gate terminal electrodes, source terminal electrodes and drain terminal electrode connected to the gate electrode, source electrode and drain electrode respectively. The semiconductor device has end face electrodes which are arranged on a side face of the substrate by a side where the source terminal electrode is arranged, and which are connected to the source terminal electrode. The semiconductor device has a projection arranged on the end face electrode which prevents solder used in die bonding from reaching the source terminal electrodes. | 2014-07-31 |
20140209925 | METHODS FOR PRODUCING IMPROVED CRYSTALLINITY GROUP III-NITRIDE CRYSTALS FROM INITIAL GROUP III-NITRIDE SEED BY AMMONOTHERMAL GROWTH - The present invention discloses methods to create higher quality group III-nitride wafers that then generate improvements in the crystalline properties of ingots produced by ammonothermal growth from an initial defective seed. By obtaining future seeds from carefully chosen regions of an ingot produced on a bowed seed crystal, future ingot crystalline properties can be improved. Specifically, the future seeds are optimized if chosen from an area of relieved stress on a cracked ingot or from a carefully chosen N-polar compressed area. When the seeds are sliced out, miscut of 3-10° helps to improve structural quality of successive growth. Additionally a method is proposed to improve crystal quality by using the ammonothermal method to produce a series of ingots, each using a specifically oriented seed from the previous ingot. When employed, these methods enhance the quality of Group III nitride wafers and thus improve the efficiency of any subsequent device. | 2014-07-31 |
20140209926 | SEMICONDUCTOR INTEGRATED CIRCUIT - A compound semiconductor integrated circuit chip has a front and/or back surface metal layer used for electrical connection to an external circuit. The compound semiconductor integrated circuit chip (first chip) comprises a substrate, an electronic device layer, and a dielectric layer. A first metal layer is formed on the front side of the dielectric layer, and a third metal layer is formed on the back side of the substrate. The first and third metal layer are made essentially of Cu and used for the connection to other electronic circuits. A second chip may be mounted on the first chip with electrical connection made with the first or the third metal layer that extend over the electronic device in the first chip in the three-dimensional manner to make the electrical connection between the two chips having connection nodes away from each other. | 2014-07-31 |
20140209927 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME AND SEMICONDUCTOR SUBSTRATE - According to one embodiment, a semiconductor device includes a first semiconductor layer of a first conductivity type made of silicon carbide; and a second semiconductor layer of a second conductivity type made of silicon carbide, placed in junction with the first semiconductor layer, and containing an electrically inactive element. | 2014-07-31 |
20140209928 | LIGHT SOURCE ASSEMBLY AND A PROCESS FOR PRODUCING A LIGHT SOURCE ASSEMBLY - A light source assembly, including one or more light emitting diodes disposed within a hermetically sealed enclosure, wherein the light emitting diodes are in the form of one or more unpackaged planar semiconductor dies mounted on an inner surface of a wall of the enclosure, wherein the wall of the enclosure includes electrically conductive tracks that connect electrical contacts of the unpackaged planar semiconductor dies to corresponding electrical contacts external of the sealed enclosure. | 2014-07-31 |
20140209929 | OPTICAL COUPLING SYSTEM AND OPTICAL SENSOR INCLUDING THE SAME - An optical coupling system is provided which includes a first layer structure and a second layer structure. The first layer structure includes a plurality of layers sequentially stacked on a substrate, and is configured to compresses a beam emitted from a light source along a direction substantially perpendicular to a top surface of the substrate. The second layer structure is formed on the substrate, and is configured to compresses the beam, having passed through the first layer structure, along a direction substantially parallel to the top surface of the substrate. | 2014-07-31 |
20140209930 | Multi-Vertical LED Packaging Structure - The present disclosure involves a light-emitting diode (LED) packaging structure. The LED packaging structure includes a submount having a substrate and a plurality of bond pads on the substrate. The LED packaging structure includes a plurality of p-type LEDs bonded to the substrate through a first subset of the bond pads. The LED packaging structure includes a plurality of n-type LEDs bonded to the substrate through a second subset of the bond pads. Some of the bond pads belong to both the first subset and the second subset of the bond pads. The p-type LEDs and the n-type LEDs are arranged as alternating pairs. The LED packaging structure includes a plurality of transparent and conductive components each disposed over and electrically interconnecting one of the pairs of the p-type and n-type LEDs. The LED packaging structure includes one or more lenses disposed over the n-type LEDs and the p-type LEDs. | 2014-07-31 |
20140209931 | LED BOARD STRUCTURE AND METHOD OF MANUFACTURING SAME - An LED board structure includes a light-pervious substrate having a plurality of light-pervious areas formed thereon, a plurality of patterned conductive traces arranged on the light-pervious substrate at locations other than the light-pervious areas, and a plurality of LEDs correspondingly arranged on the light-pervious areas and respectively having two electrode terminals electrically connected to the patterned conductive traces. With these arrangements, light emitted from the LEDs not only projects forward, but also backwardly passes through the light-pervious areas, so that both sides of the LED board structure are illuminated by the LEDs. A method of manufacturing an LED board structure is also disclosed. | 2014-07-31 |
20140209932 | PIXEL UNIT AND PIXEL ARRAY - A pixel array and a pixel unit thereof adapted in a display panel are provided. The pixel array includes a plurality of pixel units, and each pixel unit includes a first gate line, a second gate line, a data line, a first sub-pixel, a second sub-pixel and a third sub-pixel. The first sub-pixel is electrically connected to the second gate line and electrically connected to the data line through the third sub-pixel. The second sub-pixel is electrically connected to the second gate line and the data line. The third sub-pixel is electrically connected to the first gate line and the data line. | 2014-07-31 |
20140209933 | DISPLAY PANEL AND METHOD OF MANUFACTURING THE DISPLAY PANEL - A method of manufacturing a display panel includes forming a pixel-defining layer on a substrate, disposing a mask on the pixel-defining layer on a first region of the substrate, and forming a first emission layer, and disposing the mask on the pixel-defining layer on a second region of the substrate, and forming a second emission layer. | 2014-07-31 |
20140209934 | WHITE LIGHT EMITTING DIODES PACKAGE CONTAINING PLURAL BLUE LIGHT-EMITTING DIODES - A white light-emitting diode (LED) package containing plural blue LED chips is disclosed. The white LED package includes a transparent plate, plural blue LED chips bonded on a front surface of the transparent plate, a front fluorescent glue layer covering the plural blue LED chips, and a rear transparent glue layer covering a rear surface of the transparent plate and located at a position aligned with the front fluorescent glue layer. The edge of the rear transparent glue layer has an inclined lateral surface or a curved inclined lateral surface. Therefore, the light can be extracted from both front and rear surfaces, and the light extraction efficiency of the rear surface of the transparent plate is increased. The rear transparent glue layer can be replaced by a rear fluorescent glue layer to reduce the color temperature difference between the lights extracted from the front surface and the rear surface. | 2014-07-31 |
20140209935 | ARRAY SUBSTRATE AND DISPLAY DEVICE - An array substrate and a display device are disclosed. The array substrate comprises: a TFT, a pixel electrode layer driven by the TFT, a data line, a first passivation layer and a common electrode layer disposed on a substrate, the data line is for driving the TFT, the first passivation layer is disposed between the pixel electrode layer and the common electrode layer, the array substrate further comprises a second passivation layer disposed between the common electrode layer and the data line and located in a region corresponding to the data line. | 2014-07-31 |
20140209936 | VERTICALLY PRINTING LEDS IN SERIES - A first layer of first vertical light emitting diodes (VLEDs) is printed on a conductor surface. A first transparent conductor layer is deposited over the first VLEDs to electrically contact top electrodes of the first VLEDs. A second layer of second VLEDs is printed on the first transparent conductor layer. Since the VLEDs are printed as an ink, the second VLEDs are not vertically aligned with the first VLEDs, so light from the first VLEDs is not substantially blocked by the second VLEDs when the VLEDs are turned on. A second transparent conductor layer is deposited over the second VLEDs to electrically contact top electrodes of the second VLEDs. By this structure, the first VLEDs are connected in parallel, the second VLEDs are connected in parallel, and the first layer of first VLEDs and the second layer of second VLEDs are connected in series by the first transparent conductor layer. | 2014-07-31 |
20140209937 | PACKAGE-FREE AND CIRCUIT BOARD-FREE LED DEVICE AND METHOD FOR FABRICATING THE SAME - The present invention discloses a package-free and circuit board-free LED device and a method for fabricating the same. The LED device is exempted from the semiconductor package substrate and the printed circuit board and comprises at least one LED chip having two electrodes able to directly connect with external wires and at least one chip unit. A DC power or an AC power is directly electrically connected with the two electrodes through wires to drive the LED device to emit light. The present invention minimizes device components and fabrication steps, effectively reduces cost and promotes reliability and yield. | 2014-07-31 |
20140209938 | SEMICONDUCTOR LIGHT EMITTING ELEMENT - A semiconductor light emitting element includes: an insulating substrate having a plurality of convex portions on a surface thereof; a plurality of light emitting element components having semiconductor laminated bodies that are laminated on the insulating substrate and are separated from one another by a groove that exposes the convex portions; and a connector connecting between the light emitting element components. The light emitting element components include a first light emitting element component and a second light emitting element component. The first light emitting element component is separated from the second light emitting element component with the groove in between, and has a first protrusion that protrudes toward the second light emitting element component. The connector includes a first connector having a shape that straddles the groove and that follows the convex portions, and has a straight section. | 2014-07-31 |
20140209939 | CERAMIC LED PACKAGE - A package for multiple LED's and for attachment to a substrate includes a body, which includes a top body layer, a cavity disposed through the top body layer and having a floor for bonding to the multiple LED's, and a thermal conduction layer bonded to the top body layer and having a top surface forming the floor of the cavity and a bottom surface. The thermal conduction layer includes a thermally conducting ceramic material disposed between the floor and the bottom surface. The package also includes a plurality of LED bonding pads in direct contact with the floor and configured to bond to the multiple LED's and a plurality of electrical bonding pads in direct contact with the floor, proximate to the LED bonding pads, and in electrical communication with a plurality of electrical contacts disposed on a surface of the body. | 2014-07-31 |
20140209940 | LIGHT EMITTING DEVICE HAVING A PLURALITY OF LIGHT EMITTING CELLS - Exemplary embodiments of the present invention relate to a light-emitting device including a single substrate, at least two light-emitting units disposed on the single substrate, each of the at least two light-emitting units including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer disposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, a first electrode connected to the first conductivity-type semiconductor layer, and a second electrode connected to the second conductivity-type semiconductor layer, wherein two light-emitting units of the at least two light-emitting units share the first conductivity-type semiconductor layer. | 2014-07-31 |
20140209941 | LIGHT EMITTING DEVICE AND METHOD OF FABRICATING THE SAME - A light emitting device and a method of fabricating the same. The light emitting device includes a substrate. A plurality of light emitting cells are disposed on top of the substrate to be spaced apart from one another. Each of the light emitting cells includes a first upper semiconductor layer, an active layer, and a second lower semiconductor layer. Reflective metal layers are positioned between the substrate and the light emitting cells. The reflective metal layers are prevented from being exposed to the outside. | 2014-07-31 |
20140209942 | METHOD AND DEVICE OF A LED MATRIX - There is provided a method for manufacturing a light emitting diode, LED, matrix ( | 2014-07-31 |
20140209943 | LIGHT EMITTING MODULE, LIGHTING APPARATUS, AND LIGHTING FIXTURE - A light emitting module is provided in which color unevenness of illumination light is difficult to occur. An optical member formed from a translucent material having a refractive index higher than air is interposed between a first light emitting part and a second light emitting part. A side surface of the optical member has a region facing a first sealing member, and the region is at least partially in contact with a surface of the first sealing member. The side surface of the optical member has a region facing a second sealing member, and the region is at least partially in contact with a surface of the second sealing member. In plan view, an upper surface of the optical member does not substantially overlap either of an upper surface of a first light emitting element or an upper surface of a second light emitting element. | 2014-07-31 |
20140209944 | WHITE LED APPARATUS - Provided is a white LED device. The white LED device includes a blue LED chip configured to emit blue light of a wavelength range of about 440 nm to 490 nm, a yellow phosphor formed on the blue LED chip and excited by the blue light to emit yellow light of a wavelength range of about 560 nm to 615 nm, a green LED chip configured to emit green light of a wavelength range of about 500 nm to 560 nm, and a red phosphor formed on the green LED chip and excited by the green light to emit red light of a wavelength range of about 615 nm to about 670 nm. | 2014-07-31 |
20140209945 | TRANSPARENT LED LAMP FOR BIDIRECTIONAL LIGHTING - A flexible light sheet includes a thin substrate that allows light to pass through it, a transparent first conductor layer overlying the substrate, an array of vertical light emitting diodes (VLEDs) printed as an ink over the first conductor layer, each of the VLEDs having a bottom electrode electrically contacting the first conductor layer, a dielectric material between the VLEDs overlying the first conductor layer, and a transparent second conductor layer overlying the VLEDs and dielectric layer, each of the VLEDs having a top electrode electrically contacting the transparent second conductor layer. Each individual VLED may emit light bidirectionally. The VLEDs are illuminated by a voltage differential between the first conductor layer and the second conductor layer such that bidirectional light passes through the first conductor layer and the second conductor layer. Phosphor layers may be deposited on both sides to create white light using blue VLEDs. | 2014-07-31 |
20140209946 | LIGHT EMITTING DIODE PACKAGE AND METHOD FOR MANUFACTURING THE SAME - An LED package includes a lens, an LED chip securely received and engaged in the lens, and a base with an electrode assembly thereon. A bottom surface of the LED chip is bare. The lens is mounted on the base and the bottom surface of the LED chip electrically and mechanically connects with the electrode assembly. | 2014-07-31 |
20140209947 | LAMP UNIT - The lamp unit includes a first substrate, a second substrate provided over the first substrate, a light emitting device provided over the second substrate, a first conductive layer and a second conductive layer provided over the second substrate, and at least one wire electrically coupling at least one of the first conductive layer and the second conductive layer to each of the light emitting device. A protective layer is provided over the first substrate and the second substrate and surrounding the light emitting device and the at least one wire, and the upper surface of the protecting layer is located at a position above the highest point of the at least one wire. | 2014-07-31 |
20140209948 | LIGHT EMITTING DIODE PACKAGE WITH OXIDATION-RESISTANT METAL COATING LAYER - An exemplary light emitting diode (LED) package includes a substrate, a first electrode and a second electrode embedded in the substrate and spaced from each other, and an LED die mounted on a top surface of the substrate. The substrate also includes a bottom surface. Top ends of the first and second electrodes are exposed at the top surface of the substrate, and bottom ends of the first and second electrodes are exposed at the bottom surface of the substrate. An oxidation-resistant metal coating layer is formed on a top face of each of the first and second electrodes. The LED die is electrically connected to the first and second electrodes via the two oxidation-resistant metal coating layers. | 2014-07-31 |
20140209949 | LIGHT-EMITTING ELEMENT COMPRISING A REFLECTIVE STRUCTURE WITH HIGH EFFICIENCY - A light-emitting element, comprises: a substrate; a light-emitting semiconductor stack over the substrate and comprising an active layer; and a Distributed Bragg reflective unit under the substrate comprising a first Distributed Bragg reflective structure under the substrate and comprising a first number of pairs of alternately stacked first sub-layers and second sub-layers, and a second Distributed Bragg reflective structure under the first Distributed Bragg reflective structure and comprising a second number of pairs of alternately stacked third sub-layers and fourth sub-layers, wherein the first number is different from the second number. | 2014-07-31 |
20140209950 | LIGHT EMITTING DIODE PACKAGE MODULE - A light emitting diode module includes a substrate, a light emitting diode die, a transparent layer, a phosphor material layer and a lens layer. The light emitting diode die is disposed on the substrate. The transparent layer disposed on the light emitting diode die. The phosphor material layer disposed on the transparent layer. The lens layer disposed on the phosphor material layer. | 2014-07-31 |
20140209951 | OXETANE-CONTAINING COMPOUNDS AND COMPOSITIONS THEREOF - Oxetane-containing compounds, and compositions of oxetane-containing compounds together with carboxylic acids, latent carboxylic acids, and/or compounds having carboxylic acid and latent carboxylic acid functionality are provided. The oxetane-containing compounds and compositions thereof are useful as adhesives, sealants and encapsulants, particularly for components, and in the assembly, of LED devices. | 2014-07-31 |
20140209952 | HIGH EFFICIENCY LIGHT EMITTING DIODE AND METHOD FOR FABRICATING THE SAME - A high-efficiency light emitting diode including: a semiconductor stack positioned on a support substrate, including a p-type compound semiconductor layer, an active layer, and an n-type compound semiconductor layer; an insulating layer disposed in an opening that divides the p-type compound semiconductor layer and active layer; a transparent electrode layer disposed on the insulating layer and the p-type compound semiconductor layer; a reflective insulating layer covering the transparent electrode layer, to reflect light from the active layer away from the support substrate; a p-electrode covering the reflective insulating layer; and an n-electrode is formed on top of the n-type compound semiconductor layer. The p-electrode is electrically connected to the transparent electrode layer through the insulating layer. | 2014-07-31 |
20140209953 | SUPPORTING MEMBER AND LIGHT EMITTING DEVICE USING THE SUPPORTING MEMBER - A light emitting device includes a support member having a mounting surface. The support member includes an insulating member having top surface and a plurality of side surfaces, a first metal pattern disposed on the top surface of the insulating member, and a second metal pattern disposed on the side surface of the insulating member such that a side surface of the second metal pattern is continuous with a top surface of the first metal pattern. The light emitting device further includes a light emitting element mounted on the mounting surface at a location of the first metal pattern, and a bonding member that bonds the light emitting element to the mounting surface. The bonding member covers at least a portion of the first metal pattern and at least a portion of the second metal pattern. | 2014-07-31 |
20140209954 | LIGHT-EMITTING ELEMENT, METHOD FOR PRODUCING SAME AND LIGHT-EMITTING DEVICE - A light-emitting element that includes a first wavelength conversion unit and a second wavelength conversion unit. The first wavelength conversion unit includes a ceramic containing, as a primary component, a pyrochlore-type compound represented by A | 2014-07-31 |
20140209955 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a light-emitting structure that includes a first conductive semiconductor layer, an active layer, a second conductive semiconductor layer, an electrode layer contacting one of the first conductive semiconductor layer and the second conductive semiconductor layer, and a bonding conductive layer connected to the electrode layer. The bonding conductive layer includes a main bonding layer having a recess area defined by a stepped portion on a surface opposite to a surface facing the electrode layer, and a filling bonding layer filling at least a part of the recess area. | 2014-07-31 |
20140209956 | SEMICONDUCTOR LIGHT EMITTING DEVICES - In one example embodiment, a semiconductor light emitting device includes a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. The second conductivity-type semiconductor layer and the active layer having at least one contact hole exposing a region of the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes at least one columnar structure disposed in the exposed region of the first conductivity-type semiconductor layer within the at least one contact hole. The semiconductor light emitting device further includes a first electrode disposed on the exposed region of the first conductivity-type semiconductor layer in which the at least one columnar structure is disposed, the first electrode being connected to the first conductivity-type semiconductor layer. The semiconductor light emitting device further includes a second electrode connected to the second conductivity-type semiconductor layer. | 2014-07-31 |
20140209957 | LIGHT-EMITTING ELEMENT AND MANUFACTURING METHOD THEREOF - A light-emitting element includes two electrically conductive layers, a flexible insulating layer, a light-emitting chip and an encapsulating body. A groove is formed between the electrically conductive layers. The flexible insulating layer is disposed within the groove and links the electrically conductive layers. The light-emitting chip is placed on one of the electrically conductive layers or crossing over the flexible insulating layer. The light-emitting chip is electrically connected to the electrically conductive layers and covered by the encapsulating body. | 2014-07-31 |
20140209958 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, a second electrode layer electrically connected to the second semiconductor layer, and an anti-crack layer disposed on a boundary on which the light emitting structure is segmented on a chip basis, wherein the anti-crack layer is disposed under the light emitting structure and includes a metal material contacting the light emitting structure. | 2014-07-31 |
20140209959 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a transparent electrode layer disposed between the conductive substrate and the first semiconductor layer, and an ohmic layer comprising a plurality of metal contact portions vertically passing through the transparent electrode layer, wherein each metal contact portion includes AuBe. | 2014-07-31 |
20140209960 | LIGHT EMITTING DEVICE - Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a metal electrode layer disposed on the conductive substrate, a transparent electrode layer disposed on the metal electrode layer, and a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure, wherein the contact portions are spaced from one another by a predetermined distance. | 2014-07-31 |
20140209961 | ALTERNATING CURRENT LIGHT EMITTING DIODE FLIP-CHIP - An alternating current light emitting diode flip chip is provided. The flip chip includes an alternating current light emitting diode chip having a first bond pad and a second bond pad formed thereon. A first solder ball is disposed on the first bond pad and a second solder ball is disposed on the second bond pad. A flip-chip bonding process is performed to bond a carrier substrate with the first solder ball and the second solder ball. | 2014-07-31 |
20140209962 | LIGHT EMITTING DIODE HAVING ELECTRODE PADS - Exemplary embodiments of the present invention relate to a including a substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. | 2014-07-31 |
20140209963 | LIGHT EMITTING DIODE HAVING ELECTRODE PADS - A light-emitting diode includes at least two light emitting cells disposed on a substrate and spaced apart from each other, wherein each of the at least two light emitting cells includes a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. Each of the at least two light emitting cells includes a cathode disposed on the first conductivity-type semiconductor layer, an anode disposed on the second conductivity-type semiconductor layer, and the cathode of a first light emitting cell of the at least two light emitting cells is electrically connected in series to the anode of a second light emitting cell of the at least two light emitting cells adjacent to the first light emitting cell by an interconnecting section. | 2014-07-31 |
20140209964 | LED MODULE - A LED module includes a substrate, a LED chip supported on the substrate, a metal wiring installed on the substrate, the metal wiring including a mounting portion on which the LED chip is mounted, an encapsulating resin configured to cover the LED chip and the metal wiring, and a clad member configured to cover the metal wiring to expose the mounting portion, the encapsulating resin arranged to cover the clad member. | 2014-07-31 |
20140209965 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE PACKAGE, AND LIGHTING SYSTEM - Provided is a light emitting device. The light emitting device comprises: In one embodiment, a light emitting device includes: a light emitting structure comprising a first conductive type semiconductor layer, a second conductive type semiconductor layer, and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer; and a conductive support member under the light emitting structure. The conductive support member comprises a first conductive support member and a second conductive support member. The second conductive support member has a thermal conductivity higher than that of the first conductive support member. | 2014-07-31 |
20140209966 | LIGHT EMITTING DIODE HAVING ELECTRODE PADS - A substrate, a first conductive type semiconductor layer arranged on the substrate, a second conductive type semiconductor layer arranged on the first conductive type semiconductor layer, an active layer disposed between the first conductive type semiconductor layer and the second conductive type semiconductor layer, a first electrode pad electrically connected to the first conductive type semiconductor layer, a second electrode pad arranged on the second conductive type semiconductor layer, an insulation layer disposed between the second conductive type semiconductor layer and the second electrode pad, and at least one upper extension electrically connected to the second electrode pad, the at least one upper extension being electrically connected to the second conductive type semiconductor layer. | 2014-07-31 |
20140209967 | FLEXIBLE LIGHTING ASSEMBLY, A LUMINAIRE, AND A METHOD OF MANUFACTURING A FLEXIBLE LAYER - A flexible lighting assembly | 2014-07-31 |
20140209968 | PRIMER COMPOSITION AND OPTICAL SEMICONDUCTOR APPARATUS USING SAME - The invention provides a primer composition which adheres a substrate mounting an optical semiconductor device and a cured material of an addition reaction curing silicone composition that encapsulates the optical semiconductor device includes (A) an acrylic resin containing either one or both of an acrylate ester and a methacrylate ester that contains one or more SiCH═CH | 2014-07-31 |
20140209969 | POLYAMIDE COMPOSITIONS FOR LED APPLICATIONS - The invention relates to polyamide composition comprising at least one polyamide featuring a melting temperature (Tm), at least one metal oxide selected from magnesium oxide, zinc oxide and calcium oxide, and titanium dioxide, said composition featuring an intrinsic melt viscosity of below 800 Pa·s as measured according to ASTM D3835-08 at a moisture content as measured according to ASTM D6869-03 in the range of 150-500 ppm at a shear rate of 400 s | 2014-07-31 |
20140209970 | Semiconductor Device Including an Edge Area and Method of Manufacturing a Semiconductor Device - A semiconductor portion of a semiconductor device includes a semiconductor layer with a drift zone of a first conductivity type and at least one impurity zone of a second, opposite conductivity type. The impurity zone adjoins a first surface of the semiconductor portion in an element area. A connection layer directly adjoins the semiconductor layer opposite to the first surface. At a distance to the first surface an overcompensation zone is formed in an edge area that surrounds the element area. The overcompensation zone and the connection layer have opposite conductivity types. In a direction vertical to the first surface, a portion of the drift zone is arranged between the first surface and the overcompensation zone. In case of locally high current densities, the overcompensation zone injects charge carriers into the semiconductor layer that locally counter a further increase of electric field strength and reduce the risk of avalanche breakdown. | 2014-07-31 |
20140209971 | INSULATED GATE BIPOLAR TRANSISTOR - Embodiments of the present invention provide an IGBT, which relates to the field of integrated circuit manufacturing, and may improve a problem of tail current when the IGBT is turned off. The IGBT includes a cell region on a front surface, a terminal region surrounding the cell region, an IGBT drift region of a first conductivity type, and an IGBT collector region on a back surface. The IGBT collector region is connected to the IGBT drift region and under the IGBT drift region. The IGBT drift region includes a first drift region under the cell region and a second drift region under the terminal region. The IGBT collector region includes a cell collector region of a heavily doped second conductivity type under the first drift region and a non-conductive isolation region adjacent to the cell collector region. | 2014-07-31 |
20140209972 | SEMICONDUCTOR DEVICE - In a semiconductor device, gate electrodes in a first group are connected with a first gate pad and gate electrodes in a second group are connected with a second gate pad. The gate electrodes in the first group and the gate electrodes in the second group are controllable independently from each other through the first gate pad and the second gate pad. When turning off, after a turn-off voltage with which an inversion layer is not formed is applied to the gate electrodes in the second group, a turn-off voltage with which an inversion layer is not formed is applied to the gate electrodes in the first group. | 2014-07-31 |
20140209973 | Reverse Blocking Semiconductor Device, Semiconductor Device with Local Emitter Efficiency Modification and Method of Manufacturing a Reverse Blocking Semiconductor Device - A reverse blocking semiconductor device includes a base region of a first conductivity type and a body region of a second, complementary conductivity type, wherein the base and body regions form a pn junction. Between the base region and a collector electrode an emitter layer is arranged that includes emitter zones of the second conductivity type and at least one channel of the first conductivity type. The channels extend through the emitter layer between the base region and the collector electrode and reduce the leakage current in a forward blocking state. | 2014-07-31 |
20140209974 | Double Stepped Semiconductor Substrate - A method for forming a double step surface on a semiconductor substrate includes, with an etching process used in a Metal-Organic Chemical Vapor Deposition (MOCVD) process, forming a rough surface on a region of a semiconductor substrate. The method further includes, with an annealing process used in the MOCVD process, forming double stepped surface on the region of the semiconductor substrate. | 2014-07-31 |
20140209975 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first buffer layer formed on a substrate; a second buffer layer formed on a portion of the first buffer layer; a third buffer layer formed on the first buffer layer and the second buffer layer; a first semiconductor layer formed on the third buffer layer; a second semiconductor layer formed on the first semiconductor layer; and a gate electrode, a source electrode, and a drain electrode that are formed on the second semiconductor layer, wherein the second buffer layer is composed of a material with higher resistivity than the first semiconductor layer; and the second buffer layer is formed in a region immediately below and between the gate electrode and the drain electrode. | 2014-07-31 |