29th week of 2022 patent applcation highlights part 57 |
Patent application number | Title | Published |
20220231167 | TRENCH MOSFETS INTEGRATED WITH CLAMPED DIODES HAVING TRENCH FIELD PLATE TERMINATION TO AVOID BREAKDOWN VOLTAGE DEGRADATION - A semiconductor power device having shielded gate structure in an active area and trench field plate termination surrounding the active area is disclosed. A Zener diode connected between drain metal and source metal or gate metal for functioning as a SD or GD clamp diode. Trench field plate termination surrounding active area wherein only cell array located will not cause BV degradation when SD or GD poly clamped diode integrated. | 2022-07-21 |
20220231168 | SEMICONDUCTOR DEVICE - A semiconductor device includes first and second fin-shaped patterns disposed on a substrate and extending in a first direction, first and second channel layers disposed on the first and second fin-shaped patterns, first and second etch stop layers disposed inside the first and second channel layers, first and second gate structures extending in a second direction different from the first direction on the first channel layer with a first recess formed therebetween, third and fourth gate structures extending in the second direction on the second channel layer with a second recess formed therebetween, the first recess having a first width in the first direction and having a first depth in a third direction perpendicular to the first and second directions, the second recess having a second width different from the first width in the first direction, and having a second depth equal to the first depth in the third direction. | 2022-07-21 |
20220231169 | FinFET Device and Method of Forming Same - A method includes forming a fin over a substrate, forming a dummy gate structure over the fin, removing a portion of the fin adjacent the dummy gate structure to form a first recess, depositing a stressor material in the first recess, removing at least a portion of the stressor material from the first recess, and after removing the at least a portion of the stressor material, epitaxially growing a source/drain region in the first recess. | 2022-07-21 |
20220231170 | ACTIVE ELEMENT AND MANUFACTURING METHOD THEREOF - An active element and a manufacturing method thereof are provided. The active element includes a substrate, a switching bottom gate and a driving bottom gate disposed on the substrate, a first gate insulating layer disposed on the substrate and covering the switching bottom gate and the driving bottom gate, a switching channel and a driving channel disposed on the first gate insulating layer, a second gate insulating layer disposed on the first gate insulating layer and covering the switching channel and the driving channel, and a switching top gate and a driving top gate disposed on the second gate insulating layer. The driving channel has a low potential end electrically connected to the driving bottom gate. A thickness of the second gate insulating layer is greater than a thickness of the first gate insulating layer. The switching top gate is electrically connected to the switching bottom gate. | 2022-07-21 |
20220231171 | METHOD OF CONTROLLING OXYGEN VACANCY CONCENTRATION IN A SEMICONDUCTING METAL OXIDE - A method of controlling oxygen vacancy concentration in a semiconducting metal oxide includes exposing a treated surface of a crystalline metal oxide to water at a temperature and pressure sufficient to maintain the water in a liquid phase. During the exposure, a portion of the water is adsorbed onto the treated surface and dissociates into atomic oxygen and hydrogen. The atomic oxygen is injected into and diffuses through the crystalline metal oxide, forming isolated oxygen interstitials and oxygen defect complexes. The isolated oxygen interstitials replace oxygen vacancies in the crystalline metal oxide. | 2022-07-21 |
20220231172 | SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME - A semiconductor device includes, on a substrate, a channel pattern including semiconductor patterns, which are spaced apart from each other in a first direction perpendicular to a top surface of the substrate, a gate electrode on the channel pattern, the gate electrode disposed on an uppermost semiconductor pattern of the semiconductor patterns and extended into regions between the semiconductor patterns, and a pair of gate spacers disposed on the uppermost semiconductor pattern to cover opposite side surfaces of the gate electrode, respectively. Each semiconductor pattern includes germanium. Each semiconductor pattern includes a pair of first portions vertically overlapped with the pair of gate spacers and a second portion between the pair of first portions. A thickness, in the first direction, of a pair of first portions of the uppermost semiconductor pattern is larger than a thickness, in the first direction, of the second portion of the uppermost semiconductor pattern. | 2022-07-21 |
20220231173 | SURFACE DAMAGE CONTROL IN DIODES - A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer. | 2022-07-21 |
20220231174 | SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR DEVICE - Provided is a semiconductor element including at least a multilayer structure including a semiconductor layer, a first metal layer, a second metal layer and a third metal layer, the semiconductor layer including an oxide semiconductor film, the first metal layer, the second metal layer and the third metal layer being arranged on the semiconductor layer, the first metal layer, the second metal layer and the third metal layer respectively including one or two or more different metals, the first metal layer being in ohmic contact with the semiconductor layer, the second metal layer being disposed between the first metal layer and the third metal layer, and the second metal layer containing Pt or/and Pd. | 2022-07-21 |
20220231175 | PHOTOELECTRIC CONVERSION APPARATUS AND EQUIPMENT - A photoelectric conversion apparatus comprises a semiconductor layer including a plurality of photoelectric conversion portions and having a first surface and a second surface that is the surface opposite to the first surface, a wiring structure disposed on the second surface side of the semiconductor layer, and a metal compound film disposed on the first surface side of the semiconductor layer. The metal compound film contains hydrogen and carbon. The concentration of the hydrogen in the interface on the semiconductor layer side of the metal compound film is 1×10 | 2022-07-21 |
20220231176 | ZERO-BIAS PHOTOGATE PHOTODETECTOR - A photogate photodetector ( | 2022-07-21 |
20220231177 | PHOTODIODE WITH IMPROVED RESPONSIVITY - A photodetector includes a light collection region disposed on a top surface of a semiconductor substrate above a depletion region in the semiconductor substrate, and an arrangement of optical scattering elements disposed in the light collection region. The optical scattering elements scatter light incident along a perpendicular to the light collection region to transit through the depletion region at non-zero angles to the perpendicular. | 2022-07-21 |
20220231178 | METHOD AND OPTOELECTRONIC STRUCTURE PROVIDING POLYSILICON PHOTONIC DEVICES WITH DIFFERENT OPTICAL PROPERTIES IN DIFFERENT REGIONS - Method and structural embodiments are described which provide an integrated structure using polysilicon material having different optical properties in different regions of the structure. | 2022-07-21 |
20220231179 | SOLAR BATTERY MODULE, METHOD FOR MANUFACTURING SAME, AND CONSTRUCTION-USE EXTERIOR WALL MATERIAL USING SAME - To provide a solar cell module excellent in design property and weather resistance, a method for producing it, and a building exterior wall material using it. | 2022-07-21 |
20220231180 | OPTOMECHANICAL SYSTEM WITH HYBRID ARCHITECTURE AND CORRESPONDING METHOD FOR CONVERTING LIGHT ENERGY - The present invention relates to an optomechanical system ( | 2022-07-21 |
20220231181 | PHOTODETECTION ELEMENT, RECEIVING DEVICE, AND OPTICAL SENSOR DEVICE - A photodetection element includes a magnetic element including a first ferromagnetic layer to which light is applied, a second ferromagnetic layer, and a spacer layer sandwiched between the first ferromagnetic layer and the second ferromagnetic layer; a first electrode in contact with a first surface of the magnetic element, the first surface being located on a first ferromagnetic layer side of the magnetic element in a lamination direction; a second electrode in contact with a second surface of the magnetic element, the second surface being opposite to the first surface; and a first high thermal conductivity layer disposed outside of the first ferromagnetic layer and having higher thermal conductivity than the first electrode. | 2022-07-21 |
20220231182 | TERAHERTZ AND SUB-TERAHERTZ DEVICES - One embodiment provides a semiconducting device for at least one of detecting, producing or manipulating electromagnetic radiation having a frequency of at least 100 gigahertz (GHz). The semiconducting device includes a heterodimensional plasmonic structure, and an active layer. The heterodimensional plasmonic structure includes at least one nanostructure configured to form a heterodimensional junction with the active layer and having a tunable resonant plasmon frequency. | 2022-07-21 |
20220231183 | Bifacial Photovoltaic Cell Manufacturing Process - A process for manufacturing a bifacial photovoltaic cell, comprising the steps: coating a substrate with a boron containing layer; forming a cap layer over the boron containing layer which is on the second surface of the substrate; removing the boron containing layer from the surfaces of the substrate which are not covered with a cap layer; effecting the deposition of a phosphorous containing layer on the surfaces of the substrate which are not covered by the cap layer, and effecting diffusion of the phosphorous and the boron into the substrate; removing the phosphorous containing layer; texturing the substrate where there is no cap layer; effecting the deposition of a phosphorous containing layer on the first surface of the substrate and effecting diffusion of phosphorous into the substrate to form a second n-doped layer; and forming a passivating and/or antireflective coating layer covering the n-doped layer on the substrate's first surface. | 2022-07-21 |
20220231184 | METHOD FOR PRODUCING SOLAR CELLS AND SOLAR CELL ASSEMBLIES - A method for producing a mosaic solar cell assembly, comprising the steps of singulating a III-V compound circular semiconductor solar cell wafer having a wafer surface area into four discrete solar cell mosaic elements each substantially shaped as a quadrant of a circle; selecting a first and second solar cell mosaic element each having one curved edge in the shape of an arc of the circumference of the circular wafer from which the element was singulated, and three straight edges; and rearranging and positioning the first and second mosaic elements into a substantially rectangular mosaic assembly. | 2022-07-21 |
20220231185 | DEVICE AND METHOD FOR USING DIAMOND NANOCRYSTALS HAVING NV COLOR CENTERS IN CMOS CIRCUITS - A quantum-technological, micro-electro-optical or micro-electronic or photonic system includes a planar substrate of a direct or indirect semiconductor material. The system includes a microelectronic circuit including at least one transistor or diode. The system further includes a micro-optical subdevice and one or more nanoparticles, having one or more color centers. The surface of the of the planar substrate has a portion of a solidified colloidal film which is firmly bonded to the surface of the substrate. The portion of the solidified colloidal film includes the one or more nanoparticles. The system further includes a light-emitting electro-optical component. The light-emitting electro-optical component interacts optically with the micro-optical subdevice. The light-emitting electro-optical component interacts electrically and/or optically with the electrical component through the micro-optical subdevice. The interaction between the light-emitting electro-optical component and the electrical component takes place with an involvement of the color center or a plurality of color centers. | 2022-07-21 |
20220231186 | PREPARATION METHOD FOR RESONANT CAVITY LIGHT-EMITTING DIODE - A preparation method for a resonant cavity light-emitting diode comprises: forming a first mirror and a first semiconductor layer on a substrate in sequence; forming an active layer on the first semiconductor layer; and forming a second semiconductor layer and a second mirror on the active layer in sequence. The preparation method further comprises: planarizing at least one of a first contact surface between the first semiconductor layer and the first mirror, and a second contact surface between the second semiconductor layer and the second mirror. Since the first contact surface between the first semiconductor layer and the first mirror, and/or the second contact surface between the second semiconductor layer and the second mirror is planarized, the light emission uniformity of the resonant cavity light-emitting diode can be improved. | 2022-07-21 |
20220231187 | PATTERNED SUBSTRATE, EPITAXIAL WAFER, MANUFACTURING METHOD, STORAGE MEDIUM AND LED CHIP - The present disclosure relates to a patterned substrate, an epitaxial wafer, a manufacturing method, a storage medium and an LED chip. The patterned substrate is applied to a Micro LED, a substrate body of the patterned substrate is provided with at least one receiving groove capable of receiving at least part epitaxial material dropped during an epitaxial process. According to the patterned substrate provided in the present disclosure, at least part excess epitaxial material produced during a high-speed rotational molding process of an epitaxial layer in an MOCVD furnace may drop into the receiving groove and not remain on the epitaxial layer, thereby solving the problem of the thickness of the epitaxial layer being uneven, and thus improving wavelength uniformity, that is, the patterned substrate provided in the present disclosure at least solves the problem of wavelength non-uniformity. | 2022-07-21 |
20220231188 | METHOD FOR LARGE SCALE GROWTH AND FABRICATION OF III-NITRIDE DEVICES ON 2D-LAYERED H-BN WITHOUT SPONTANEOUS DELAMINATION - An embodiment of the disclosed technology provides a scalable method of growing nitride-based LED devices on a growth substrate and transferring an individually selected nitride-based LED device to a receiving substrate. The method can include subdividing the growth substrate into delimited areas using a patterned grid. A mechanical release layer can be grown on the growth substrate. A set of nitride-based LED devices can be grown on the mechanical release layer, such that a nitride-based LED device can be grown in each delimited area. An individual nitride-based LED device can be selected and released from the growth substrate. The selected nitride-based LED device can be transferred to the receiving substrate. | 2022-07-21 |
20220231189 | METHOD FOR MANUFACTURING LIGHT-EMITTING ELEMENT AND METHOD FOR REMOVING HYDROGEN FROM LIGHT-EMITTING ELEMENT - A method for manufacturing a light-emitting element includes providing the light-emitting element that includes a light-emitting layer with an emission wavelength of not more than 306 nm and a p-type layer including AlGaInN including Mg as an acceptor, and removing hydrogen in the p-type layer from the light-emitting element by irradiating the light-emitting element with ultraviolet light at a wavelength of not more than 306 nm from outside and treating the light-emitting element with heat in a state in which a reverse voltage, or a forward voltage lower than a threshold voltage of the light-emitting element, or no voltage is applied to the light-emitting element. The removing of hydrogen in the p-type layer from the light-emitting element is performed in a N | 2022-07-21 |
20220231190 | VERTICAL LIGHT EMITTING DIODE STRUCTURE WITH HIGH CURRENT DISPERSION AND HIGH RELIABILITY - A vertical light emitting diode structure with high current dispersion and high reliability comprises a conductive substrate with a central region and a side region; a light emitting semiconductor layer is disposed on the central region; an ohmic contact metal layer is disposed at a center of the light emitting semiconductor layer; an N-type electrode is disposed at the side region and is connected with the ohmic contact metal layer and the N-type electrode through an N-type electrode bridging structure; a working current is diffused from the center of the light emitting semiconductor layer to have high current dispersion, so that the problem of heat dissipation of local high current caused by the design that the N-type electrode is disposed on the edge can be solved. | 2022-07-21 |
20220231191 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a semiconductor substrate and a light-emitting layer on the semiconductor substrate. The light-emitting layer includes at least one quantum well layer and barrier layers alternately stacked. The quantum well layer includes a first semiconductor mixed crystal having a larger lattice constant than a lattice constant of the semiconductor substrate. The barrier layers each includes a second semiconductor mixed crystal having a smaller lattice constant than the lattice constant of the semiconductor substrate. The quantum well layer includes a first strain amount that is a product of the layer thickness thereof and a first strain ratio. The barrier layer each includes a second strain amount that is a product of the layer thickness thereof and a second strain ratio. The quantum well layer and the barrier layers are provided such that the first strain amount is greater than the second strain amount. | 2022-07-21 |
20220231192 | CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION - A micro-light emitting diode (micro-LED) includes a mesa structure that includes an n-type semiconductor layer, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer. The active region includes at least one quantum well layer. The at least one quantum well layer has a first effective bandgap and a first stress in a center region of the at least one quantum well layer, and a second effective bandgap and a second stress in a mesa sidewall region of the at least one quantum well layer. The second stress is lower than the first stress or is opposite to the first stress. The second effective bandgap is greater than the first effective bandgap to form a lateral carrier barrier in the at least one quantum well layer. | 2022-07-21 |
20220231193 | LED MODULE, LED DISPLAY MODULE AND METHOD OF MANUFACTURING THE SAME - The invention relates to a method for manufacturing modules with one or more optoelectronic components, comprising the steps: producing at least one layer stack providing a base module on a carrier having a first layer, an active layer formed thereon, and a second layer formed thereon; exposing a surface area of the first layer facing away from the carrier; forming a first contact to a surface region of the second layer facing away from the carrier; and forming a second contact to the surface area of the first layer facing away from the carrier. | 2022-07-21 |
20220231194 | LIGHT EMITTING APPARATUS AND PROJECTOR - A light emitting apparatus includes a laminated structure including a plurality of columnar portions. The plurality of columnar portions each includes a first semiconductor layer, a second semiconductor layer different from the first semiconductor layer in terms of conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer. The second semiconductor layer has a first section, and a second section that surrounds the first section in a plan view along a lamination direction in which the first semiconductor layer and the light emitting layer are laminated structured on each other and has a bandgap wider than a bandgap of the first section. The second section forms a side surface of each of the columnar portions. | 2022-07-21 |
20220231195 | OPTOELECTRONIC SEMICONDUCTOR COMPONENT COMPRISING CONNECTION REGIONS, AND METHOD FOR PRODUCING THE OPTOELECTRONIC SEMICONDUCTOR COMPONENT - The invention relates to an optoelectronic semiconductor component, comprising a first semiconductor layer stack, which comprises a first semiconductor layer of a first conductivity type and a second semiconductor layer of a second conductivity type. The optoelectronic semiconductor component additionally has a first contact element and a second contact element. The first semiconductor layer stack and the second semiconductor layer are arranged one above the other. The second semiconductor layer is electrically connected to the second contact element. A part of a first main surface of the first semiconductor layer stack adjoins the first contact element, and a part of the first main surface of the first semiconductor layer stack is structured such that both a plurality of protruding regions as well as connection regions are formed. The connection regions adjoin regions in which a part of the first main surface of the first semiconductor layer stack adjoins the first contact element, and the connection regions have a lateral extension which is greater than five times the average lateral extension of the protruding regions. | 2022-07-21 |
20220231196 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - A semiconductor light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer, wherein the first semiconductor layer includes a lateral outer perimeter surface surrounding the active layer; a plurality of vias penetrating the semiconductor stack to expose the first semiconductor layer; a first pad portion and a second pad portion formed on the semiconductor stack to respectively electrically connected to the first semiconductor layer and the second semiconductor layer, wherein the second pad portion and the first pad portion are arranged in a first direction; wherein the plurality of vias is arranged in a plurality of rows, the plurality of rows are arranged in the first direction and includes a first row and a second row, the first row is covered by the second pad portion, the second row is not covered by the first pad portion and the second pad portion, wherein a spacing between two adjacent vias in the first row is different from a spacing between two adjacent vias in the second row. | 2022-07-21 |
20220231197 | FLIP-CHIP LIGHT EMITTING DEVICE AND PRODUCTION METHOD THEREOF - A flip-chip light emitting device includes a substrate, a light-emitting layer, a bonding layer disposed between the substrate and the light-emitting layer, and a protective insulating layer disposed over the light-emitting layer and the bonding layer. The bonding layer has first and second upper surfaces that respectively have different first and second roughnesses. | 2022-07-21 |
20220231198 | SUBSTRATE STRUCTURE AND ELECTRONIC DEVICE - An electronic device and a substrate structure thereof. The substrate structure includes a carrier board and a laminated structure. The carrier board has a board body, through holes and conductive portions. The board body has a first surface and a second surface. The through holes communicate the first and second surfaces. Each through hole has a first opening and a second opening. The conductive portions are arranged on the first surface, and the first opening is sealed by a corresponding conductive portion. The laminated structure includes a viscid layer and conductive elements. One surface of the viscid layer is in surface contact with the second surface. Each conductive element passes through and accommodates in the viscid layer, and corresponds to one through hole in a projection direction of the carrier board. One end of each conductive element is electrically connected to one conductive portion through the corresponding through hole. | 2022-07-21 |
20220231199 | Optoelectronic Device Mounting Structure with Embedded Heatsink Element - A mounting structure for mounting a set of optoelectronic devices is provided. A mounting structure for a set of optoelectronic devices can include: a body formed of an insulating material; and a heatsink element embedded within the body. A heatsink can be located adjacent to the mounting structure. The set of optoelectronic devices can be mounted on a side of the mounting structure opposite of the heatsink. | 2022-07-21 |
20220231200 | COLOR CONVERSION PANEL AND DISPLAY DEVICE INCLUDING THE SAME - A color conversion panel includes light blocking members spaced apart from each other on a substrate; and a first color conversion layer, a second color conversion layer, and a transmission layer respectively disposed between the light blocking members, wherein the transmission layer includes first quantum dots, and the first quantum dots convert incident light into light having a wavelength in a range of about 480 nm to about 530 nm. | 2022-07-21 |
20220231201 | DEVICES INCLUDING GREEN-EMITTING PHOSPHORS - A device including an LED light source optically coupled to a phosphor material including a green-emitting phosphor selected from the group consisting of compositions (A1)-(A62) and combinations thereof. | 2022-07-21 |
20220231202 | MICRO-LED APPARATUS WITH A SERIES OF CARBON-BASED LIGHT-EMITTING MATERIALS AND MANUFACTURING METHOD FOR ADJUSTING EMISSION COLORS - Disclosed herein are materials and a micro-LED display with carbon-based light-emitting materials, carbon quantum dots, that are made by a solvothermal synthesis of a mixture of aromatic amino acid, 3,4-dihydroxy-L-phenylalanine (LDOPA), and urea in dimethylformamide (DMF). The mixture is heated in a sealed pressure reactor at a temperature, ranging from 120 degrees Celsius to 350 degrees Celsius, for 4-24 hours. The product is then purified to collect the solid powder. The purified CDs can be dissolved in an acrylate monomer solution or a polymer solution for material delivery and curing process on a target substrate for the applications, including light-emitting devices or sensors. | 2022-07-21 |
20220231203 | SEMICONDUCTOR DEVICES INCORPORATING QUANTUM DOTS - In accordance with one or more aspects of the present disclosure, a semiconductor device is provided. The semiconductor device may include: a plurality of light-emitting devices comprising a first light-emitting device, a second light-emitting device, and a third light-emitting device, wherein each of the plurality of light-emitting devices comprises a first ohmic contact and a second ohmic contact; and a light-conversion device with embedded quantum dots, wherein a first portion of the light-conversion device includes a first plurality of quantum dots for converting light produced by the first light-emitting device into light of a first color, wherein a second portion of the light-conversion device includes a second plurality of quantum dots for converting light produced by the second light-emitting device into light of a second color, and wherein the third light-emitting device emits light of a third color. | 2022-07-21 |
20220231204 | ADHESIVE FILM TRANSFER COATING AND USE IN THE MANUFACTURE OF LIGHT EMITTING DEVICES - A converter layer bonding device, and methods of making and using the converter layer bonding device are disclosed. A converter layer bonding device as disclosed herein includes a release liner and an adhesive layer coating the release liner, the adhesive layer is solid and non-adhesive at room temperature, and is adhesive at an elevated temperature above room temperature. | 2022-07-21 |
20220231205 | ULTRAVIOLET LIGHT EMITTING DEVICE - An ultraviolet light emitting device includes a substrate, an ultraviolet light emitting element, a bonding layer, a fluororesin film, and a fluorocarbon compound. The substrate includes a mounting surface. The ultraviolet light emitting element includes a first surface, a second surface, and a side surface. The bonding layer bonds the electrode on the first surface of the ultraviolet light emitting element and a part of the mounting surface of the substrate. The fluororesin film is a flexible material configured to transmit ultraviolet light. The substrate and the fluororesin film are disposed in a state where the ultraviolet light emitting element is sandwiched therebetween. The fluorocarbon compound is a liquid at normal temperature and pressure. The fluorocarbon compound fills a gap between the side surface of the ultraviolet light emitting element and the fluororesin film in a state of being in contact with the side surface and the fluororesin film. | 2022-07-21 |
20220231206 | Light-Emitting Device and Displayer - The disclosure provides a light-emitting device and a displayer. Herein, the light-emitting device includes a substrate, a light-emitting chip, a first light-transmitting layer, a second light-transmitting layer and a nano coating. The light transmittance of the second light-transmitting layer is greater than the light transmittance of the first light-transmitting layer. A reference surface corresponding to the light-emitting chip is arranged above the substrate, and the reference surface is higher than the bottom surface of the light-emitting chip and not higher than the top surface of the light-emitting chip. The first light-transmitting layer covers the surface of the light-emitting chip below the reference surface, and the second light-transmitting layer covers the surface of the light-emitting chip above the reference surface. The nano coating covers the outer surface of the first light-transmitting layer, the outer surface of the second light-transmitting layer and the side surface of the substrate. | 2022-07-21 |
20220231207 | HYBRID LENS FOR CONTROLLED LIGHT DISTRIBUTION - A lens for distribution of light predominantly toward a preferential side from a light emitter having an emitter axis. The lens has a faceted output region, a smooth output surface and at least one reflective surface which reflects light through total-internal-reflection (TIR) toward the faceted output region. The faceted output region is formed by pairs of transverse surfaces each surface of which redirects the received light to provide a composite illuminance pattern. The lens may further have faceted input surfaces at least partially defining a light-input cavity about the emitter axis. The faceted input region are formed by pairs of transverse surfaces each surface of which redirects the received light. | 2022-07-21 |
20220231208 | COMPOSITE LEAD FRAME AND LIGHT-EMITTING DIODE PACKAGE STRUCTURE INCLUDING THE SAME - A composite lead frame for mounting a light-emitting diode chip thereon includes a chip mounting seat having at least two electrodes spaced apart from each other by a gap and configured to electrically connect with the LED chip. Each electrode is formed with at least one through hole. A plurality of fillers made of polymer materials are filled in the gap and the through hole. A reflector cup is disposed on and cooperates with the electrodes to define a receiving space for receiving the LED chip. The reflector cup is composed of a silicon-based polymer material and a white inorganic filling material, and is connected to the electrodes and the fillers. A LED package structure including the composite lead frame is also disclosed. | 2022-07-21 |
20220231209 | LED DISPLAY - A display includes micro LEDs connected to a color conversion layer and driver ICs connected to the micro LEDs via an electrically connecting layer. Each micro LEDs includes an N pad and a P pad. The micro LEDs emit light of a same color, and the color conversion layer converts the light into various colors. The electrically connecting layer includes elongated negative electrodes connected to the N pads and elongated positive electrodes connected to the P pads. Each driver IC includes a first group of bonding pads on a face, a second group of bonding pads on an opposite face, and conductors for connecting the first group of bonding pads to the second group of bonding pads. Each bonding pad in the first group is connected to an elongated negative or positive electrode. The circuit board is connected to the second group of bonding pads of each driver IC. | 2022-07-21 |
20220231210 | DISPLAY DEVICE - A display device includes a base layer having a display area and a non-display area adjacent to the display area, pixels disposed in the display area, first signal lines electrically connected to the pixels and disposed in the display area, and second signal lines electrically connected to the first signal lines, wherein the second signal lines include a first line, a second line, a third line, and a fourth line sequentially disposed on the base layer, and wherein, in a planar view, the first line and the second line do not overlap, and the third line and the fourth line do not overlap. | 2022-07-21 |
20220231211 | DISPLAY MODULE AND DISPLAY APPARATUS HAVING THE SAME - A display module includes a substrate, a ground layer disposed in the substrate, a plurality of self-emissive devices provided on a front surface of the substrate, a first driver integrated circuit (IC) provided on a rear surface of the substrate, and a first heat dissipation structure connected to the ground layer, and including a first ground pad exposed to the rear surface of the substrate. The first heat dissipation structure is configured to dissipate heat to the rear surface of the substrate. | 2022-07-21 |
20220231212 | LIGHT EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR - In a light emitting device, in a bottom surface of a cavity of a Si substrate, slit-shaped through holes and through electrodes that fill the through holes are provided at a position facing a first element electrode of a light emitting element. A length of an upper surface of the through electrode in a long axis direction is larger than a height of the through electrode in a thickness direction of the Si substrate. A joining layer having a shape corresponding to a shape of the upper surface of the through electrode is disposed between the first element electrode of the light emitting element and the upper surface of the through electrode facing the first element electrode. The entire upper surface of the through electrode is joined to the first element electrode via the joining layer. | 2022-07-21 |
20220231213 | Flexible Thermoelectric Device Having Radiative Cooling Part and Method of Manufacturing Radiative Cooling Part - The present invention relates to a flexible thermoelectric device that may be combined and attached to a curved surface and generates an electromotive force based on a temperature difference between one surface and the other surface, and more particularly, to a flexible thermoelectric device having a radiative cooling part which improves power generation performance by increasing cooling efficiency of a cooling side through radiative cooling and minimizes a volume of a heat dissipating part, and a method of manufacturing a radiative cooling part. | 2022-07-21 |
20220231214 | HgCdTe Metasurface-based Terahertz Source and Detector - A Terahertz Source and Detector device is provided that includes a nanostructured metasurface configured to transmit fully into a layer of absorbing material below the metasurface to achieve transparent conductivity in the visible spectrum region, wherein the metasurface is composed of crystalline material with very high mobility. The crystalline material can be composed of HgCdTe. The HgCdTe material can have a bandgap of about 700 meV. The intrinsic carrier concentration can be 10 | 2022-07-21 |
20220231215 | SUPERCONDUCTING QUANTUM HYBRID SYSTEM, COMPUTER DEVICE, AND QUANTUM CHIP - A superconducting quantum hybrid system includes: a silicon carbide (SiC) epitaxial layer; and a superconducting qubit line, the superconducting qubit line corresponding to a superconducting qubit, where a designated region of the SiC epitaxial layer includes a nitrogen vacancy (NV) center, the NV center being formed by implanting nitrogen ions into the designated region of the SiC epitaxial layer, and where the superconducting qubit line is located on a surface of the SiC epitaxial layer, the superconducting qubit is coupled to a solid-state defect qubit, and the solid-state defect qubit is a qubit corresponding to the NV center in the designated region. | 2022-07-21 |
20220231216 | CIRCUIT MANUFACTURING METHOD AND SUPERCONDUCTING CIRCUIT - A circuit manufacturing method according to the present disclosure is a circuit manufacturing method by deposition, comprising performing first deposition for forming a first superconductor layer, oxidizing a surface of the first superconductor layer to form an oxide film, performing second deposition for forming a second superconductor layer, whereby a circuit in which Josephson junctions are aligned is generated. A mask includes two opening parts and an odd number of first-type opening parts. The width of a first-type opening part has such a length that the area of a Josephson junction formed based on the first superconductor layer and the second superconductor layer derived from the first-type opening part becomes larger than the area of a Josephson junction formed based on the first superconductor layer and the second superconductor layer derived from the two opening parts that are adjacent to each other. | 2022-07-21 |
20220231217 | ELECTROMECHANICAL ACTUATOR HAVING CERAMIC INSULATION AND METHOD FOR PRODUCTION THEREOF - The present disclosure relates to an electromechanical actuator, having a stack arrangement made of ceramic basis material having electromechanical properties and electrodes as well as a ceramic insulation for operation/use of the actuator in a humid environment. To ensure a long service life of the actuator with increased electromechanical expansion, an exemplary structure of the ceramic insulation has a smaller average grain size than the structure of the ceramic basis material. A method for the production of an actuator having ceramic insulation and a method for controlling such an actuator are also disclosed. | 2022-07-21 |
20220231218 | Wafer-Scale Piezoelectric Bio-Organic Thin Films - A flexible piezoelectric thin film, and method of manufacture, has a polyvinyl alcohol (PVA)-glycine-PVA sandwich heterostructure. The thin film is manufactured by evaporating the solvent from a glycine-PVA mixture solution. The film automatically assembles into the PVA-glycine-PVA sandwich heterostructure as it is salted out. Strong hydrogen bonding between the oxygen atoms in glycine and hydroxyl groups on PVA chains are responsible for the nucleation and growth of the piezoelectric γ-glycine and alignment of the domain orientation. | 2022-07-21 |
20220231219 | SEMICONDUCTOR COMPONENT INCLUDING A DIELECTRIC LAYER - A semiconductor component that includes at least one dielectric layer and at least one first electrode and one second electrode. In addition, at least two defect types different from one another are present in the dielectric layer. These at least two defect types different from one another move along localized defect states, each at an average effective distance, in the direction of one of the two electrodes as a function of an operating voltage that is applied between the first electrode and the second electrode, and an operating temperature that is present. The average effective distance is greater than 3.2 nm. | 2022-07-21 |
20220231220 | FLEXOELECTRICITY ULTRASONIC TRANSDUCER IMAGING SYSTEM - A flexoelectricity ultrasonic (UT) transducer imaging system is disclosed comprising a polytetrafluoroethylene (PTFE) layer, a plurality of flexoelectricity UT transducers, and a multiplexer. The PTFE layer includes a front and back surface and the plurality of flexoelectricity UT transducers is attached to the back surface of the PTFE layer. Each UT transducer has a front-end and back-end and the front-end of each flexoelectricity UT transducer is attached to the back surface of the PTFE layer. The flexoelectricity UT transducers are arranged along the back surface of the PTFE layer as a two-dimensional array and each flexoelectricity UT transducer is configured to vibrate in a normal direction to the back surface of the PTFE layer. The multiplexer in signal communication with each flexoelectricity UT transducer, where the flexoelectricity UT transducers are sandwiched between the multiplexer and the PTFE layer. | 2022-07-21 |
20220231221 | SPIN CURRENT MAGNETIZATION ROTATIONAL ELEMENT - This spin current magnetization rotational type magnetoresistive element includes a magnetoresistive effect element having a first ferromagnetic metal layer having a fixed magnetization orientation, a second ferromagnetic metal layer having a variable magnetization orientation, and a non-magnetic layer sandwiched between the first ferromagnetic metal layer and the second ferromagnetic metal layer, and spin-orbit torque wiring which extends in a direction that intersects the stacking direction of the magnetoresistive effect element, and is connected to the second ferromagnetic metal layer, wherein the electric current that flows through the magnetoresistive effect element and the electric current that flows through the spin-orbit torque wiring merge or are distributed in the portion where the magnetoresistive effect element and the spin-orbit torque wiring are connected. | 2022-07-21 |
20220231222 | NON-VOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME - The present invention relates to a non-volatile memory device and a method of fabricating the same. The non-volatile memory device according to an embodiment of the present invention comprises a first electrode; a second electrode; a first oxide layer disposed between the first electrode and the second electrode, and having a reversible filament formed therein; and an oxygen reservoir layer disposed between the first oxide layer and the second electrode, and absorbing oxygens of the first oxide layer to form oxygen vacancy constituting the reversible filament in the first oxide layer. The concentration of the oxygen vacancy may increase from the first oxide layer toward the oxygen reservoir layer. | 2022-07-21 |
20220231223 | PHASE-CHANGE MEMORY AND METHOD OF FORMING SAME - A device and a method of forming same are provided. The device includes a substrate, a first dielectric layer over the substrate, a bottom electrode extending through the first dielectric layer, a phase-change layer over the bottom electrode, and a top electrode over the phase-change layer. The phase-change layer includes a first portion extending into the bottom electrode and a second portion over the first portion and the first dielectric layer. A width of the first portion decreases as the first portion extends toward the substrate. The second portion has a first width. The top electrode has the first width. | 2022-07-21 |
20220231224 | PHASE CHANGE MEMORY AND METHOD FOR MAKING THE SAME - The present disclosure provides a phase change memory and a method for making the same. The phase change memory includes a substrate, a plurality of phase change memory cells, and an isolation material layer. The plurality of phase change memory cells are separately disposed on the substrate, the phase change memory cell sequentially includes, from bottom to top, a first electrode material layer, a first transition material layer, an ovonic threshold switching (OTS) material layer, a second transition material layer, a second electrode material layer, a third transition material layer, a phase change material layer, a fourth transition material layer, and a third electrode material layer; The isolation material layer is disposed on the substrate and surrounds side surfaces of the phase change memory cell, and the plurality of phase change memory cells are isolated from each other by isolation material layer. | 2022-07-21 |
20220231225 | MEMORY SELECTOR - A selector for a memory cell, intended to change from a resistive state to a conductive state so as to respectively prohibit or authorize access to the memory cell, characterized in that it is made of an alloy consisting of germanium, selenium, arsenic and tellurium. | 2022-07-21 |
20220231226 | ELECTRONIC DEVICE - The application relates to an electronic device comprising an organic layer containing a mixture of at least two different compounds. | 2022-07-21 |
20220231227 | ORGANIC ELECTROLUMINESCENT ELEMENT AND ELECTRONIC DEVICE - An organic EL device includes an emitting layer, a first layer adjacent to an anode-side of the emitting layer, and a second layer adjacent to a cathode-side thereof. The emitting layer contains first to third compounds. The first and second layers contain compounds of Formulae (1) and (2), respectively. The first and second compounds exhibits fluorescence and delayed fluorescence, respectively. Singlet energies S | 2022-07-21 |
20220231228 | ORGANIC ELECTROLUMINESCENT DEVICE - The present disclosure relates to an organic electroluminescent device comprising a light-emitting layer and a hole transport zone. By comprising a combination of the specific light-emitting layer and the specific hole transport zone according to the present disclosure, it is possible to produce an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifespan characteristics. | 2022-07-21 |
20220231229 | ORGANIC ELECTROLUMINESCENT COMPOUND, A PLURALITY OF HOST MATERIALS, AND ORGANIC ELECTROLUMINESCENT DEVICE COMPRISING THE SAME - The present disclosure relates to an organic electroluminescent compound, a plurality of host materials, and an organic electroluminescent device comprising the same. By comprising the organic electroluminescent compound according to the present disclosure as a single host material, or a specific combination of compounds according to the present disclosure as a plurality of host materials, it is possible to produce an organic electroluminescent device having improved driving voltage, luminous efficiency, and/or lifetime properties. | 2022-07-21 |
20220231230 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - A premixed co-evaporation source that is a mixture of a first compound and a second compound is disclosed. The co-evaporation source is for vacuum deposition process. The first compound has a different chemical structure than the second compound. The first compound and the second compound are both organic compounds. At least one of the first compound and the second compound contains at least one less abundant stable isotope atom. At least one of the first compound and the second compound is a fluorescent or delayed fluorescent emitter. The first compound has an evaporation temperature T1 of 100 to 400° C.; the second compound has an evaporation temperature T2 of 100 to 400° C.; the absolute value of T1−T2 is less than 20° C. The first compound has a concentration C1 in said mixture and a concentration C2 in a film formed by evaporating the mixture in a high vacuum deposition tool with a chamber base pressure between 1×10 | 2022-07-21 |
20220231231 | ORGANIC ELECTROLUMINESCENT ELEMENT, ORGANIC ELECTROLUMINESCENT DISPLAY DEVICE, AND ELECTRONIC DEVICE - An organic electroluminescence device includes an emitting region provided between a cathode and an anode, a first anode side organic layer, a second anode side organic layer, and a third anode side organic layer, in which the emitting region includes at least one emitting layer, the second anode side organic layer contains at least one compound different from the compound contained in the third anode side organic layer, the third anode side organic layer has a film thickness of 20 nm or more, and a difference NM | 2022-07-21 |
20220231232 | ORGANIC ELECTROLUMINESCENT DEVICE - Provided is an organic electroluminescent device. The organic electroluminescent device comprises a first compound having a structure of Formula 1 and a second compound having a structure of Formula 2. Compared to the related art or a device comprising only the first compound or the second compound, a combination of the first compound and the second compound can significantly improve the overall performance of the organic electroluminescent device, such as improved device efficiency, an extended device lifetime and reduced device voltage. Further provided are a display assembly comprising the organic electroluminescent device and a compound composition comprising the first compound and the second compound. | 2022-07-21 |
20220231233 | PEROVSKITE SOLAR CELLS WITH NEAR-INFRARED SENSITIVE LAYERS - The present disclosure is directed to perovskite-based solar cell device structures and compositions comprising one or more near infrared sensitive semiconducting materials. The near infrared sensitive semiconducting materials can extend the photoresponse spectra of the devices to the near infrared region, thereby improving the power conversion efficiency of the solar cell. | 2022-07-21 |
20220231234 | Compounds comprising a hetero-fluorene group - The present invention relates to a compound, and to an organic semiconductor layer comprising this compound, suitable for use as an organic semiconductor layer for electronic devices, and a method of manufacturing the same, wherein the compound comprises a hetero-fluorene group and is represented by formula 1. | 2022-07-21 |
20220231235 | HETEROCYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING SAME - The present specification relates to a heterocyclic compound represented by Chemical Formula 1, and an organic light emitting device including the same. | 2022-07-21 |
20220231236 | Organic Compound, Organic Light Emitting Diode and Organic Light Emitting Device Having the Compound - The present disclosure relates to an organic compound having the following structure of Formula 1, an organic light emitting diode (OLED) where an electron transport layer and/or a charge generation layer includes the organic compound and an organic light emitting device including the organic light emitting diode. While only the specific moiety in the organic compound is deuterated, the organic compound can implement excellent luminous efficiency and luminous lifespan as a compound where all the carbon atoms are deuterated. The OLED can maximize its luminous efficiency and luminous lifespan with minimizing utilization of expensive deuterium. | 2022-07-21 |
20220231237 | ORGANIC ELECTROLUMINESCENT MATERIALS AND DEVICES - Ligands with fused spirocyclic substitutions and metal complexes formed with such ligands and having improved performance in OLED applications are disclosed. | 2022-07-21 |
20220231238 | LIGHT-EMITTING DEVICE, LIGHT-EMITTING APPARATUS, ELECTRONIC DEVICE, AND LIGHTING DEVICE - A novel light-emitting device is provided. A light-emitting device with high emission efficiency is provided. A light-emitting device with a favorable lifetime is provided. A light-emitting device with low driving voltage is provided. The light-emitting device includes an anode, a cathode, and an EL layer positioned between the anode and the cathode. The EL layer includes a hole-injection layer, a light-emitting layer, and an electron-transport layer. The hole-injection layer contains a hole-transport material and an electron-accepting material. The electron-transport layer contains an electron-transport material and an alkali metal itself, an alkaline earth metal itself, a compound of an alkali metal or an alkaline earth metal, or a complex thereof. The hole-injection layer has the spin density measured by an ESR method is lower than or equal to 1×10 | 2022-07-21 |
20220231239 | DISPLAY DEVICE - A display device includes a display module and a support plate disposed on the display module and including a plurality of first fibers and a plurality of second fibers disposed on the first fibers and extending to cross the first fibers in a plan view. An opening is defined in the support plate and includes first sides parallel to an extension direction of the first fibers and facing each other and second sides parallel to an extension direction of the second fibers and facing each other. | 2022-07-21 |
20220231240 | TRANSPARENT ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a transparent organic light emitting display apparatus having an emission area, and a transmission area disposed adjacent to the emission area and configured to pass external light therethrough, includes sequentially forming an interlayer dielectric and a first protection layer on a first substrate, patterning a planarization layer over the first protection layer, forming an organic light emitting device over the planarization layer, forming an encapsulation layer and an encapsulation substrate over the organic light emitting device, and exposing and etching at least some portions of the transmission area by using photolithography after the patterning of the planarization layer. | 2022-07-21 |
20220231241 | DISPLAY DEVICE HAVING FLEXIBLE SUPPORT MEMBER HAVING OPENINGS - A display device including a display panel having a foldable area, a support member disposed on a bottom surface of the display panel and including a plurality of openings formed in the foldable area, and an elastic member disposed on a bottom surface of the support member and overlapping the openings in the foldable area. | 2022-07-21 |
20220231242 | COMPOSITE INTERFACE TRANSPORT MATERIAL-BASED PEROVSKITE PHOTOVOLTAIC, LIGHT EMISSION AND LIGHT DETECTION MULTI-FUNCTIONAL DEVICE AND PREPARATION METHOD THEREFOR - A composite interface transport material-based perovskite photovoltaic, light emission and light detection multi-functional device and a preparation method therefor. The multi-functional device comprises a transparent conductive glass, a composite electron transport layer, a perovskite active layer, a composite hole transport layer and a metal electrode layer which are sequentially arranged in a stacked manner from bottom to top. The work functions of the interface transport layers are adjusted by means of the multi-element interface transport materials, so that the work functions of the electron transport layer and the hole transport layer are respectively levelled with conduction band and valence band positions of the perovskite active layer. According to experiment result comparisons, the photoelectric conversion efficiency and the luminous efficiency of the perovskite multi-functional device, after energy band regulation, are significantly increased. | 2022-07-21 |
20220231243 | OPTOELECTRONIC DEVICES WITH ORGANOMETAL PEROVSKITES WITH MIXED ANIONS - The invention provides an optoelectronic device comprising a mixed-anion perovskite, wherein the mixed-anion perovskite comprises two or more different anions selected from halide anions and chalcogenide anions. The invention further provides a mixed-halide perovskite of the formula (I) [A][B][X] | 2022-07-21 |
20220231244 | Colloidal Quantum Dot Photodetectors Having Thin Encapsulation Layers Thereon and Methods of Fabricating the Same - Colloidal quantum dot devices are provided including an integrated circuit; a colloidal quantum dot structure on the integrated circuit; and an encapsulation layer on the colloidal quantum dot structure, the encapsulation layer having a thickness from about 0.5 nm to about 500 nm. | 2022-07-21 |
20220231245 | IMAGING ELEMENT, STACKED IMAGING ELEMENT AND SOLID-STATE IMAGING DEVICE, AND INORGANIC OXIDE SEMICONDUCTOR MATERIAL - An imaging element includes a photoelectric conversion section including a first electrode | 2022-07-21 |
20220231246 | PHOTOELECTRIC CONVERSION ELEMENT AND IMAGING DEVICE - A photoelectric conversion element according to an embodiment of the present disclosure includes: a first electrode; a second electrode that is disposed to be opposed to the first electrode; and an organic photoelectric conversion layer that is provided between the first electrode and the second electrode and includes one organic semiconductor material. The organic photoelectric conversion layer includes at least one or more domains (D | 2022-07-21 |
20220231247 | HEAT INSULATING TRANSPARENT TANDEM ORGANIC SOLAR CELLS - An exemplary transparent tandem organic solar cell comprises a transparent substrate; a first transparent electrode disposed on a surface of the transparent substrate; and a series of interconnecting organic active layers disposed on a surface of the first transparent electrode. The series of organic interconnecting active layers comprise at least a front sub-cell that blocks ultraviolet wavelengths from passing through the front sub-cell; and a back sub-cell that blocks infrared wavelengths from passing through the back sub-cell. The solar cell further comprises a distributed Bragg reflector disposed on a surface of the back sub-cell, wherein the distributed Bragg reflector reflects unblocked infrared photons at an interface between the back sub-cell and the distributed Bragg reflector. Additionally, the series of interconnecting organic active layers are configured to allow wavelengths of visible light to pass through the transparent tandem organic solar cell, wherein the transparent tandem organic solar cell is fully transparent. | 2022-07-21 |
20220231248 | Display Device, Display Module, and Electronic Device - A display device having a long lifetime is provided. The display device includes a first light-emitting device and a second light-emitting device. The first light-emitting device includes a first electrode and a common electrode. The second light-emitting device includes a second electrode and a common electrode. The first light-emitting device includes a first light-emitting layer and an electron-transport layer in this order from a side of one of the first electrode and the common electrode which functions as an anode. The second light-emitting device includes a second light-emitting layer between the second electrode and the common electrode. The first light-emitting layer contains a first organic compound emitting light of a first color. The second light-emitting layer contains a second organic compound emitting light of a second color. The electron-transport layer contains a third organic compound and a first substance. The third organic compound is an electron-transport material. The first substance is a metal, a metallic salt, a metal oxide, or an organometallic salt. The electron-transport layer includes a first region and a second region which differ in a concentration of the first substance. | 2022-07-21 |
20220231249 | LIGHT-EMITTING DEVICE, LIGHT-EMITTING APPARATUS, LIGHT-EMITTING MODULE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - The reliability of a light-emitting device emitting near-infrared light is increased. The light-emitting device includes a hole-injection layer, a light-emitting layer, and an electron-transport layer in this order between a pair of electrodes. The hole-injection layer contains a first compound and a second compound. The first compound has a property of accepting an electron from the second compound. The second compound has a HOMO level higher than or equal to −5.7 eV and lower than or equal to −5.4 eV. The light-emitting layer contains a light-emitting organic compound. The maximum peak wavelength of light emitted from the light-emitting organic compound is greater than or equal to 760 nm and less than or equal to 900 nm. The electron-transport layer contains a third compound and a substance containing a metal. The third compound is an electron-transport material. The substance containing a metal is a metal, a metallic salt, a metal oxide, or an organometallic salt. | 2022-07-21 |
20220231250 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING DISPLAY DEVICE - According to one embodiment, a display device includes a lower electrode, a second insulating layer including an opening overlapping the lower electrode, an organic layer including a light-emitting layer and a functional layer, disposed in the opening and covering the lower electrode and an upper electrode covering the organic layer. The functional layer includes a first region located between the lower electrode and the light-emitting layer and a second region including an end surface located directly above the second insulating layer. A dopant concentration of a guest material in the second region is lower than the dopant concentration of the guest material in the first region. | 2022-07-21 |
20220231251 | ORGANIC ELECTROLUMINESCENT DEVICE AND MANUFACTURING METHOD THEREOF - The present disclosure provides an organic electroluminescent device and a manufacturing method thereof. The organic electroluminescent device includes an anode, an electron transport layer and a cathode. The material of the electron transport layer includes a mixture of a first electron transport material and a second electron transport material, the lowest unoccupied molecular orbital energy level of the first electron transport material is higher than that of the second electron transport material, and the ratio of the first electron transport material to the second electron transport material first decreases and then increases in the direction from the cathode to the anode. | 2022-07-21 |
20220231252 | ORGANIC LIGHT-EMITTING DEVICE AND DISPLAY PANEL - The present disclosure provides an organic light-emitting device and a display panel. The organic light-emitting device includes a plurality of layers stacked with each other between an anode and a cathode. The plurality of layers includes a first hole transport layer, a first light-emitting layer, a first electron transport layer, an n-type charge generation layer, and a p-type charge generation layer stacked in sequence. The n-type charge generation layer includes a matrix, a first dopant, and a second dopant. The matrix is a first electron transport organic material, the first dopant is a metal quinoline complex, and the second dopant is selected from the group consisting of a rare earth metal, an alkali metal, an alkaline-earth metal, and any combination thereof. Or the matrix is a first electron transport organic material, the first dopant is a metal quinoline complex, and the second dopant is an n-type organic material. | 2022-07-21 |
20220231253 | LIGHT-EMITTING DEVICE AND ELECTRONIC APPARATUS INCLUDING THE SAME - A light-emitting device includes: a first electrode; a second electrode facing the first electrode; and an interlayer located between the first electrode and the second electrode and including an emission layer, wherein the interlayer includes a hole transport region located between the first electrode and the emission layer, the hole transport region includes a hole injection layer, the first electrode includes a conductive oxide and a first inorganic material, and the hole injection layer includes a second inorganic material. An electronic apparatus includes the light-emitting device. | 2022-07-21 |
20220231254 | DISPLAY DEVICE - A display device is provided. A display device including folding areas, the display device includes a display panel, a first protection member disposed on the display panel, a second protection member disposed on the first protection member, a first adhesive member disposed between the display panel and the first protection member, and a second adhesive member disposed between the first protection member and the second protection member and having an elastic modulus equal to or smaller than an elastic modulus of the first adhesive member. | 2022-07-21 |
20220231255 | SUBSTRATE AND PREPARATION METHOD THEREOF, DISPLAY PANEL AND PREPARATION METHOD THEREOF, AND DISPLAY DEVICE - A substrate and a preparation method thereof, a display panel and a preparation method thereof, and a display device are provided. The substrate includes a display region and a peripheral region positioned in a periphery of the display region and used for sealing, the substrate includes: a base substrate; an insulating layer, arranged on a side of the base substrate and positioned in the display region and the peripheral region for sealing; and a plurality of pixel units, positioned on the insulating layer corresponding to the display region, and in the peripheral region, at least one groove is disposed on a side of the insulating layer which faces away from the base substrate, a side of the groove which is away from the base substrate is open, and a depth direction of the groove is perpendicular to the base substrate. | 2022-07-21 |
20220231256 | DISPLAY APPARATUS AND MANUFACTURING THE SAME - A display apparatus includes: a substrate including a display area and a peripheral area around the display area, a first organic layer arranged in the peripheral area, and a second organic layer arranged in the display area and the peripheral area. A tilt angle of a side surface of the second organic layer is equal to or greater than about 10 degrees and less than or equal to about 90 degrees. | 2022-07-21 |
20220231257 | DISPLAY SUBSTRATE AND DISPLAY APPARATUS - Disclosed are a display substrate and a display apparatus. The display substrate includes: a base substrate, including a display region and a non-display region; an encapsulation dam, disposed on the base substrate and located in the non-display region, and annularly surrounding the display region; and an overflow detection structure, disposed on the base substrate and located in the non-display region, and annularly surrounding the display region, where the overflow detection structure is located between a region where the encapsulation dam is located and the display region. The overflow detection structure includes: at least one convex part; and a reflection part on a side, facing away from the base substrate, of the convex part and at least partially covering the at least one convex part. | 2022-07-21 |
20220231258 | DISPLAY DEVICE - A display device includes a first display area, a second display area and a non-display area between the first display area and the second display area and extending in a first direction, at least a portion of the non-display area having a bending area connecting the first display area to the second display area, the display device comprising: light-emitting elements on a base substrate in the first display area and in the second display area; a first encapsulation layer covering light-emitting elements in the first display area; a second encapsulation layer covering light-emitting elements in the second display area; a signal wiring crossing the non-display area and extending in a second direction; and an upper compensation layer in the non-display area and filling a gap between the first encapsulation layer and the second encapsulation layer. | 2022-07-21 |
20220231259 | ATOMIC LAYER DEPOSITION APPARATUS AND ATOMIC LAYER DEPOSITION METHOD - An atomic layer deposition apparatus for forming an atomic layer on a flexible substrate, the apparatus including an unwinding chamber having an unwinding roll for unwinding the flexible substrate, a winding chamber having a winding roll for winding the flexible substrate on which the atomic layer is formed, a plurality of reaction chambers provided between the unwinding chamber and the winding chamber so that the flexible substrate can pass therethrough, a first supply part for storing a gas containing a first precursor, a first supply pipe connected to the first supply part, a second supply part for storing a purge gas, a second supply pipe connected to the second supply part, a third supply part for storing a gas containing a second precursor, a third supply pipe connected to the third supply part, and an exhaust pipe connected to the plurality of reaction chambers. | 2022-07-21 |
20220231260 | DISPLAY DEVICE AND METHOD OF MANUFACTURING DISPLAY DEVICE - A display device includes a display panel including a display region, a terminal region provided with a terminal, and a bending region located between the display region and the terminal region and capable of bending, the terminal region being located on a rear surface side opposite to a display surface side with respect to the display region based on the bending region bent and a protective coating provided on the display surface side of the bending region. When a direction in which the display region, the bending region, and the terminal region are arranged is defined as a first direction and a direction crossing the first direction is defined as a second direction, the bending region includes a bank portion located in the second direction with respect to the protective coating, projecting to the display surface side, and extending in the first direction. | 2022-07-21 |
20220231261 | ORGANIC LIGHT-EMITTING ELEMENT, METHOD FOR PRODUCING ORGANIC LIGHT-EMITTING ELEMENT, ORGANIC LIGHT-EMITTING DEVICE, METHOD FOR PRODUCING ORGANIC LIGHT-EMITTING DEVICE, LIGHTING DEVICE, MOVING OBJECT, IMAGE PICKUP DEVICE, AND ELECTRONIC APPARATUS - An organic light-emitting element includes, from a first surface of a substrate in this order, the substrate, a lower electrode, an organic compound layer, an upper electrode, a first protective layer containing inorganic material, a second protective layer whose density is higher than the density of the first protective layer, and a third protective layer whose density is higher than the density of the first protective layer, in which the third protective layer is disposed on a second surface of the substrate opposite to the first surface of the substrate. | 2022-07-21 |
20220231262 | OPTOELECTRONIC DEVICE INCLUDING LIGHT TRANSMISSIVE REGIONS, WITH LIGHT DIFFRACTION CHARACTERISTICS - An opto-electronic device comprises light transmissive regions extending through it along a first axis to allow passage of light therethrough. The transmissive regions may be arranged along a plurality of transverse configuration axes. Emissive regions may lie between adjacent transmissive regions along a plurality of configuration axes to emit light from the device. Each transmissive region has a lateral closed boundary having a shape to alter at least one characteristic of a diffraction pattern exhibited when light is transmitted through the device to mitigate interference by such pattern. An opaque coating may comprise at least one aperture defining a corresponding transmissive region to preclude transmission of light therethrough other than through the transmissive region(s). The device can form a face of a user device having a body and housing a transceiver positioned to receive light along at least one light transmissive region. | 2022-07-21 |
20220231263 | DISPLAY DEVICE - According to one embodiment, a display device includes an insulating substrate, a first insulating layer disposed on the insulating substrate, a lower electrode disposed on the first insulating layer, a second insulating layer disposed on the first insulating layer and including an opening overlapping the lower electrode, an organic layer including a light-emitting layer, disposed in the opening and covering the lower electrode, an upper electrode comprising a first end surface, which is an inclined surface, directly above the second insulating layer and stacked on the organic layer and an optical adjustment layer including a second end surface on an inner side with respect to the first end surface and in contact with the upper electrode. | 2022-07-21 |
20220231264 | PROCESS FOR PRODUCING FLEXIBLE OLED SCREENS - Processes for producing an OLED screen with a reduced size, in particular for an aircraft. The processes utilize laser cutting to reduce the size of OLED screens from a production line. After the cutting, a plasma coating process seals the cut edges. The portion of the production OLED screen that is cut may be a portion of the display screen. The screens with the reduced sized may be installed in an aircraft, and, two or more of the OLED screens with reduced sized may be positioned adjacent to each other so as to form an array. | 2022-07-21 |
20220231265 | Display Assembly Apparatus And Methods For Information Handling Systems - Apparatus and methods may be implemented to provide multi-layer display assembly apparatus for information handling systems, including portable information handling systems (e.g., such as smart phones, tablet computers, notebook computers, etc.) as well as display assembly apparatus for other types of information handling systems such as desktop computers, servers, etc. The disclosed multi-layer display assembly apparatus may be implemented to include multiple adhesive layers (e.g., two or more adhesive layers) that have different indices of refraction and/or different debonding characteristics, and that are disposed between a display substrate and an transparent protective hardcover such as glass-based or plastic-based cover. | 2022-07-21 |
20220231266 | SECONDARY BATTERY - An embodiment of the present invention relates to a secondary battery, and the object of the present invention is to provide a secondary battery capable of improving the flatness of an electrode assembly and reducing internal resistance when the electrode assembly is rolled. To this end, disclosed is a secondary battery comprising: an electrode assembly rolled including a positive electrode plate, a negative electrode plate, and a separator, wherein the positive electrode plate has positive electrode uncoated portions provided at a rolled central portion thereof and a rolled end portion thereof, and the negative electrode plate has negative electrode uncoated portions provided at a rolled central portion thereof and a rolled end portion thereof; a first positive electrode foil tab and a second positive electrode foil tab respectively connected to the positive electrode uncoated portions; a first negative electrode foil tab and a second negative electrode foil tab respectively connected to the negative electrode uncoated portions; a positive electrode current collection tab connected together to the first positive electrode foil tab and the second positive electrode foil tab; a negative electrode current collection tab connected together to the first negative electrode foil tab and the second negative electrode foil tab; and a pouch-type case for accommodating the electrode assembly. | 2022-07-21 |