29th week of 2013 patent applcation highlights part 12 |
Patent application number | Title | Published |
20130181123 | SATURATION CORRECTION FOR ION SIGNALS IN TIME-OF-FLIGHT MASS SPECTROMETERS - The invention relates to time-of-flight mass spectrometers in which individual time-of-flight spectra are measured by detection systems with limited dynamic measurement range and are summed to sum spectra. The invention proposes a method to increase the dynamic range of measurement of the spectrum. To achieve this, those ions signals whose measured values display saturation of the analog-to-digital converter (ADC) are replaced by correction values, particularly if several successive measured values are in saturation. The correction values are obtained from the width of the signals, preferably simply from the number of measured values in saturation. | 2013-07-18 |
20130181124 | ION TRAP TYPE MASS SPECTROMETER AND MASS SPECTROMETRY - Provide is an ion trap mass spectrometer which is configured to gain an MS spectrum of only fragment data in an MS/MS analysis, thereby makes it possible to perform the analysis in a short period. For this purpose, the device is comprised of: an ionization unit configured to ionize a sample which has been separated into respective components; an ion trap unit configured to trap ions ionized by ionization unit in an electric field and eject the ions in accordance with the respective masses of the ions; a detection unit configured to detect the ions ejected from the ion trap unit; and a processing unit configured to generate an MS spectrum (mass spectrum) on the basis of data detected in the detection unit. The processing unit further configured to gain an MS spectrum of only fragment data of a target ion from a difference between an MS spectrum gained in an MS analysis made before and/or after an MS/MS analysis and an MS spectrum gained in the MS/MS analysis. | 2013-07-18 |
20130181125 | METHOD AND SYSTEM FOR INCREASING THE DYNAMIC RANGE OF ION DETECTORS - A mass spectrometer system can include a mass analyzer operable to mass transmit streams of ions to a detector in a mass dependent fashion for measurement of ion flux intensity. An ion attenuator can be located in the extraction region between the mass analyzer and detector, downstream of the mass analyzer, and can be operable to provide selective attenuation of the ion beam by attenuating ion flux intensity also in mass dependent fashion. Higher concentration ions can be selected and attenuated, while other lower concentration ions can be left unattenuated. Different ions can be attenuated to different degrees. Locating the ion attenuator downstream of the mass analyzer so that the ion beam is already mass differentiated when attenuated can avoid mass discriminatory effects associated with ion beam attenuators. Selective attenuation of only certain ions but not others can extend the dynamic range of the detector without necessarily sacrificing detector sensitivity. | 2013-07-18 |
20130181126 | Sample Transferring Apparatus for Mass Cytometry - In a mass cytometer or mass spectrometer, a sample of elemental tagged particles is transferred from a dispersion to a gas flow through a carrier aerosol spray for atomization and ionization by inductively coupled plasma (ICP) source. The configuration of the sample transfer apparatus allow for total consumption of the sample by passing the sample spray through a deceleration stage to decelerate the spray of particles from its high velocity expansion. Following the deceleration stage, the decelerated sample of particles can be accelerated and focused through an acceleration stage for transferring into the ICP. This effectively improves the particle transfer between the sample spray and the ICP. | 2013-07-18 |
20130181127 | TANDEM QUADRUPOLE MASS SPECTROMETER - All data obtained from an A/D converter during a summation period with values exceeding a prescribed threshold is excluded from summation up to a prescribed maximum number of deletions, and the values of the remaining data are summed to find one piece of measurement data corresponding to that summation period. The number of pieces of noise data reflecting the influx of particles that cause spike-like noise is extremely small, so noise data is removed in a state in which there are no signals and no target ions are present. When target ions are present, legitimate data which is not noise data may be removed, but the number of pieces of removed data is small in comparison to the total number of pieces of data, so the effects of the removal of legitimate data essentially do not emerge in the summation results. It is therefore possible to effectively reduce spike-like noise. | 2013-07-18 |
20130181128 | PHOTOCONDUCTIVE ANTENNA, TERAHERTZ WAVE GENERATING DEVICE, CAMERA, IMAGING DEVICE, AND MEASURING DEVICE - A photoconductive antenna is adapted to generate terahertz waves when irradiated by pulsed light. The photoconductive antenna includes a first conductive region, a second conductive region, and a semiconductor region. The second conductive region is spaced apart from the first conductive region to form a gap therebetween in a top plan view of the photoconductive antenna. The semiconductor region is positioned in the gap between the first conductive region and the second conductive region in the top plan view. An interfacial surface of the semiconductor region positioned in the gap is flush with first interfacial surfaces of the first and second conductive regions. Second interfacial surfaces of the first and second conductive regions positioned on an opposite side from the first interfacial surfaces are positioned on the same side with respect to the interfacial surface of the semiconductor region positioned in the gap. | 2013-07-18 |
20130181129 | High Resolution Thermography - A thermographic imaging device includes a focal array portion including a planar arrangement of a plurality of light sensitive devices, and an aperture portion including a facing planar surface, an opposing planar surface, and an arrangement of a plurality of orifices that are communicative with the facing planar surface and the opposing planar surface, each infrared sensitive device of the plurality of infrared arranged in alignment with a corresponding orifice of the plurality of orifices. | 2013-07-18 |
20130181130 | IMAGING APPARATUS USING TALBOT INTERFERENCE AND ADJUSTING METHOD FOR IMAGING APPARATUS - An imaging apparatus includes a diffraction grating which diffracts electromagnetic waves from an electromagnetic wave source, a shield grating which shields a part of the electromagnetic waves diffracted by the diffraction grating, a detector which detects an intensity distribution of the electromagnetic waves through the shield grating, and an adjusting unit which adjusts the attitude of at least one of the diffraction grating and the shield grating on the basis of the detection result by the detector, wherein the adjusting unit divides the intensity distribution detected by the detector into a plurality of regions and adjusts the attitude of at least one of the diffraction grating and the shield grating on the basis of the intensity distributions of the plurality of regions. | 2013-07-18 |
20130181131 | REFLECTIVE PROXIMITY SENSOR WITH IMPROVED SMUDGE RESISTANCE AND REDUCED CROSSTALK - An electronic device includes a protective layer above a proximity sensor having a radiation emitter and a radiation detector. A groove, which may be wedge shaped, is formed in the bottom surface of the protective layer. A radiation barrier, which may be reflective or absorptive material, is placed in the groove in the bottom surface of the protective layer. A light blocking coating may be applied to the bottom surface and the groove of the protective layer to prevent the passage of visible radiation and permit the passage of infrared radiation. A radiation shield may be positioned between the emitter and the detector directly below the radiation barrier. Alignment features may be formed on the mating surfaces of the radiation barrier and radiation shield to align the protective layer with respect to the radiation shield and proximity sensor. | 2013-07-18 |
20130181132 | INTRUSION DETECTION APPARATUS AND METHOD - Disclosed herein is an intrusion detection apparatus which includes an infrared emission unit for emitting infrared beams and an infrared reception unit for receiving the infrared beams. The infrared emission unit adjusts an emission direction in which the infrared beams are emitted based on information received from the infrared reception unit, and adjusts an optical axis which is formed with the infrared reception unit depending on whether infrared beam values corresponding to the adjusted emission direction fall within the normal range. The infrared reception unit adjusts a detection direction in which the infrared beams are detected based on information received from the infrared emission unit, and adjusts an optical axis which is formed with the infrared emission unit depending on whether infrared beam values corresponding to the adjusted detection direction fall within the normal range. The intrusion into a relevant region is detected using the optical axis. | 2013-07-18 |
20130181133 | Method and System for Evaluating the Distribution of an Absorbent Material in an Absorbent Article - A system for imaging a distribution of an absorbent material within an absorbent article. The system includes a radiation source and a detector positioned such that the absorbent article is situated between the radiation source and the detector. The absorbent article includes an absorbent material having a spatial distribution within the absorbent article. Infrared radiation within a particular wavelength range (e.g., 3 μm to 3.2 μm) is more likely to be absorbed by the absorbent material than by other materials within the absorbent article. The radiation source is configured to generate infrared radiation incident on the absorbent article. The detector is configured to detect a quantity of the infrared radiation within the particular wavelength range that was transmitted through the absorbent article. The radiation source is further configured to generate data indicative of the spatial distribution of the absorbent material based on the detected quantity of the infrared radiation. | 2013-07-18 |
20130181134 | METHOD AND APPARATUS FOR FILTER CONDITION INSPECTION - A method of inspecting a ceramic wall-flow filter ( | 2013-07-18 |
20130181135 | COMPOUNDS FOR NEUTRON RADIATION DETECTORS AND SYSTEMS THEREOF - A material according to one embodiment exhibits an optical response signature for neutrons that is different than an optical response signature for gamma rays, said material exhibiting performance comparable to or superior to stilbene in terms of distinguishing neutrons from gamma rays, wherein the material is not stilbene, the material comprising a molecule selected from a group consisting of: two or more benzene rings, one or more benzene rings with a carboxylic acid group, one or more benzene rings with at least one double bound adjacent to said benzene ring, and one or more benzene rings for which at least one atom in the benzene ring is not carbon. | 2013-07-18 |
20130181136 | APPARATUS AND SYSTEM FOR INSPECTING STRUCTURES - This disclosure describes an apparatus and a system for inspection of deepwater assets, e.g., pipes and pipelines that traverse the ocean floor. In one embodiment, the apparatus includes a housing that retains a compensation fluid therein to form a fluidic environment. A digital detector resides in the fluidic environment. The digital detector can generate digital images in response to radiation that penetrate though the deepwater asset and impinges on components of the digital detector. In one embodiment, the digital detector utilizes one or more seal members to secure the components together. The seal members may be permeable and/or impermeable to the compensation fluid thereby preventing and/or permitting migration of the compensation fluid between certain components of the digital detector. | 2013-07-18 |
20130181137 | Neutron Radiation Detector, Neutron Radiation Detection Scintillator and Method for Discriminating Between Neutron Radiation and Gamma Radiation - A neutron radiation detector has a function that discriminates between neutron radiation and γ radiation based on a difference in pulse shape between photodetection signals from a neutron radiation detection scintillator, which includes a Ce-containing LiCaAlF | 2013-07-18 |
20130181138 | Multi-axis Magnetic Lens for Focusing a Plurality of Charged Particle Beams - A cellular-type PD unit is proposed and a plurality of the cellular-type PD units is used in pairs in a multi-axis magnetic lens for focusing a plurality of charged beams. First type PD units or second type PD units (called as hybrid PD unit as well) can be applied to cellular-type PD units to flexibly construct sub-lenses. Furthermore, magnetic shielding plates with a plurality of through openings can be placed above and/or below the multi-axis magnetic lens to make magnetic flux leaking out of the multi-axis magnetic lens vanish away rapidly outside the magnetic shielding plates. | 2013-07-18 |
20130181139 | BEAM LINE DESIGN TO REDUCE ENERGY CONTAMINATION - Methods and apparatus for reducing energy contamination can be provided to a beam line assembly for ion implantation. Protrusions comprising surface areas and grooves therebetween can face neutral trajectories within a line of sight view from the workpiece within the beam line assembly. The protrusions can alter the course of the neutral trajectories away from the workpiece or cause alternate trajectories for further impacting before hitting a workpiece, and thereby, further reduce energy contamination for more sensitive implants. | 2013-07-18 |
20130181140 | Charged Particle Beam System Aperture - An improved beam-defining aperture structure and method for fabrication is realized. An aperture opening is made in a thin conductive film positioned over a cavity in a support substrate, where the aperture size and shape is determined by the opening in the conductive film and not determined by the substrate. | 2013-07-18 |
20130181141 | Ultraviolet Sterilization System - A system for sterilizing packaged products, for example liquid products, with ultraviolet light. The system includes an apparatus for moving product through a treatment zone for a period of time and in a manner sufficient to sterilize the product. | 2013-07-18 |
20130181142 | Method Of Generating Low-Energy Secondary Electrons For Applications In Biological Sciences, Radiochemistry, And Chemistry Of Polymers And Physics Of Radiotherapy - The present disclosure relates to a method and a system for generating low-energy electrons in a biological material. The biological material is held in position by a support. Laser beam pulses are directed by a focusing mechanism toward a region of interest within the biological material. This generates filaments of low-energy electrons within the region of interest. The method and system may be used for radiotherapy, radiochemistry, sterilization, nanoparticle coating, nanoparticle generation, and like uses. | 2013-07-18 |
20130181143 | MICROSCOPY WITH ADAPTIVE OPTICS - A method of manipulating a focused light beam includes focusing a beam of excitation light with a lens to a focal spot within a sample, where a cross-section of the beam includes individual beamlets. Directions and/or relative phases of the individual beamlets of the excitation beam at a rear pupil of the lens are individually varied with a wavefront modulating element, and emission light emitted from the focal spot is detected while the directions or relative phases of individual beamlets are varied. The directions of individual beamlets are controlled to either maximize or minimize the emission light from the focal spot, and the relative phases of individual beamlets are controlled to increase the emission light from the focal spot. | 2013-07-18 |
20130181144 | ARTICLES INCORPORATING THERMOGRAPHIC PHOSPHORS, AND METHODS AND APPARATUS FOR AUTHENTICATING SUCH ARTICLES - Embodiments include methods and apparatus for identifying a thermographic phosphor (e.g., Er:YIG) incorporated on or within an article. The method and apparatus embodiments include an excitation energy generator selectively exposing the article to excitation energy in an absorption band of the thermographic phosphor. An emitted radiation detector detects first emission characteristics of first emitted radiation from the article within an emission band of the thermographic phosphor when the article has a first temperature, and detects second emission characteristics of second emitted radiation from the article within the emission band when the article has a second temperature that is different from the first temperature. A temperature adjustment element is configured to adjust the temperature of the article. Embodiments further include a processing system determining whether the first emission characteristics are sufficiently different from the second emission characteristics. | 2013-07-18 |
20130181145 | SYSTEM AND METHOD FOR REDUCING TRAPPED ENERGETIC PROTON OR ENERGETIC ELECTRON FLUX AT LOW EARTH ORBITS - A system and method for improving the survivability of space systems following a High Altitude Nuclear Explosion (HANE) incident resulting in energetic electrons being trapped in the inner radiation belt of Earth is disclosed. The ULF electromagnetic waves is generated by space or ground based transmitters and the frequency range is selected such that the injected waves are in gyrofrequency resonance with trapped energetic particles. The Radiation Belt Remediation (RBR) depends on the wave-number of the injected waves and the wave-number of the injected waves increases along their propagation path when they approach the cyclotron frequency of the dominant or minority ions 0 | 2013-07-18 |
20130181146 | ELECTROMAGNETIC WAVE EMISSION DEVICE - An electromagnetic wave emission device includes a nonlinear crystal which receives exciting light Lp having two wavelength components λ | 2013-07-18 |
20130181147 | BLOWOUT PREVENTER WITH PORT FOR ENTRY BETWEEN CASING AND TUBING STRING AND/OR PORT FOR ENTRY INTO TUBING STRING - An improved blowout preventer for a well having a casing extending into an underground formation. The blowout preventer has a pair of opposed ram members received within a pair transverse bores within the main housing. The ram members move between an engaged position wherein they engage the pump rod and each other when a pump rod is received through the longitudinal bore in the housing, and a disengaged position where they are retracted from engaging either the pump rod or each other. There are one or more side entry ports within the main housing which permit a fluid or elongate member to be inserted into the casing. | 2013-07-18 |
20130181148 | AIR-OPERATED VALVE - The present invention is directed to provide an air-operated valve suitable for use in a form using a one-touch joint. A casing | 2013-07-18 |
20130181149 | ELECTROMAGNETIC VALVE - An electromagnetic valve includes a rod, an armature fixed to the rod, and a stopper that limits motion of the armature to one side in an axial direction of the rod. The armature has a rod hole through which a fixed potion of the rod extends to be fixed to the armature. The rod includes a flange portion that is located on the one side in the axial direction with reference to the fixed portion. The flange portion is larger than the fixed portion in a radial direction of the rod. The armature includes a contact portion adjacent to an opening of the rod hole that is open toward the one side in the axial direction, and the contact portion contacts the flange portion. | 2013-07-18 |
20130181150 | COUPLING ARRANGEMENT - A coupling arrangement for fluid coupling a work tool to a machine comprising at least one coupler assembly slideably mounted for coupling a machine fluid circuit and a work tool fluid circuit at a connect position; an actuation circuit arranged to actuate the at least one coupler assembly from a disconnect position to the connect position; and a sensor to detect presence of the work tool for activation of the actuation circuit. | 2013-07-18 |
20130181151 | SOLENOID ACTUATOR - A press-fit space is formed between a hole end wall portion of a stator core and a closing end wall portion of a stopper, which are axially opposed to each other in a press-fit hole of the stator core. At least one of the hole end wall portion of the stator core and the closing end wall portion of the stopper, which are axially opposed to each other, has a recess that increases a volume of the press-fit space formed between the hole end wall portion of the stator core and the closing end wall portion of the stopper. | 2013-07-18 |
20130181152 | GAS VALVE UNIT - A gas valve unit for setting a gas volumetric flow supplied to a gas burner of a gas appliance, in particular a gas cooking appliance includes a plurality of on/off valves which can be actuated mechanically by moving at least one body relative to the on/off valves. Each one of the on/off valves has an opening and a movable blocking body, which rests on a valve seat when the on/off valve is closed to thereby close off the opening. | 2013-07-18 |
20130181153 | Valve Assembly and Method - A valve assembly includes a housing defining a cavity and a bore which opens into the cavity. A valve member is disposed in the cavity. The valve member moves between an open position for allowing fluid flow through the housing and a closed position for preventing fluid flow through the housing. An actuator extends through the bore for moving the valve member between the open and closed positions. A packing is positionable in the bore to provide a seal about the actuator for preventing fluid from exiting the housing through the bore. The packing is ejectable from the bore. The valve assembly includes a first and second biasing member. The first biasing member is configured to apply a first force to the packing to provide the seal. The second biasing member is configured to apply a second force to the packing for ejecting the packing from the bore. | 2013-07-18 |
20130181154 | PLUG HEAD ASSEMBLIES - In accordance with various embodiments, a plug head assembly is provided comprising a ceramic plug head having a frustroconical geometry, wherein the ceramic plug head has a proximal terminus and a distal terminus, wherein the ceramic plug head has a first coefficient of thermal expansion (CTE), a sleeve having a frustroconical geometry conforming to the ceramic plug head and a second CTE, wherein the second CTE is greater than the first CTE, a distal retainer having a frustroconical geometry conforming to the sleeve, the distal retainer having a first engagement portion for engaging the a proximal retainer, the proximal retainer having a second engagement portion for engaging the distal retainer, and a base that couples with the proximal retainer. In addition, thick banded plug heads are provided | 2013-07-18 |
20130181155 | PLUG HEAD ASSEMBLIES - In accordance with various embodiments, a plug head assembly is provided comprising a ceramic plug head having a frustroconical geometry, wherein the ceramic plug head has a proximal terminus and a distal terminus, wherein the ceramic plug head has a first coefficient of thermal expansion (CTE), a sleeve having a frustroconical geometry conforming to the ceramic plug head and a second CTE, wherein the second CTE is greater than the first CTE, a distal retainer having a frustroconical geometry conforming to the sleeve, the distal retainer having a first engagement portion for engaging the a proximal retainer, the proximal retainer having a second engagement portion for engaging the distal retainer, and a base that couples with the proximal retainer. In addition, thick banded plug heads are provided. | 2013-07-18 |
20130181156 | HYDRAULIC TRANSMISSION VALVE - The invention relates to a hydraulic transmission valve with a magnetizable housing which is integrally configured in one piece with a pole core cone. The transmission valve according to the invention facilitates comfortably coupling in particular startup clutches, shifting clutches or synchronization clutches in a friction locking manner. Still using a transmission valve of this type is facilitated for fewer to no transmission oil changes. Furthermore a transmission valve of this type can also be used in countries with inferior transmission oil quality. The housing includes a connection. The connection defines an anchor stroke and a concentric arrangement between the pole core cone and a pole tube. Thus, the pole tube is fixated the magnetizable pole flange. An anchor that is exclusively supported in the pole tube is magnetically separated from the pole tube through a separation layer with a thickness of 0.01 mm to 0.06 mm. | 2013-07-18 |
20130181157 | COMPOSITION GENERATING FIRE EXTINGUISHING SUBSTANCE THROUGH CHEMICAL REACTION OF INGREDIENTS AT HIGH TEMPERATURE - A fire extinguishing composition generating fire extinguishing substance through chemical reaction of ingredients at high temperature, wherein: the fire extinguishing composition comprises a flame retardant, an oxidant, a reducing agent and an adhesive; contents of each ingredient are: the flame retardant: 50 wt % to 90 wt %; the oxidant: 5 wt % to 30 wt %; the reducing agent: 5 wt % to 10 wt %; the adhesive: 0% to 10 wt %. In a usage of the fire extinguishing composition, a pyrotechnic agent is adopted as a heat source and a power source; and the purpose of fire extinguishing is achieved by: igniting the pyrotechnic agent, and the oxidant and the reducing agent in the fire extinguishing composition are reacted to generate the in the use of high temperature produced by burning the pyrotechnic agent. by burning the pyrotechnic agent, so as to implement fire extinguishing. Different from the traditional aerosol generating agent, there is no external heat source, and the composition itself does not burn. Compared with the traditional aerosol generating agent, the fire extinguishing composition of the present invention is more efficient and safer. | 2013-07-18 |
20130181158 | FIRE EXTINGUISHING COMPOSITION GENERATING FIRE EXTINGUISHING SUBSTANCE THROUGH HIGH-TEMPERATURE DECOMPOSITION - The present invention relates to a fire extinguishing composition generating fire extinguishing substance through high-temperature decomposition; the fire extinguishing composition includes a fire extinguishing material which can be decomposed to release substance with fire extinguishing properties during the heating process; the content of the fire extinguishing material is at least 80 wt %; a pyrotechnic agent is adopted as a heat source and a power source in a process of fire extinguishing; and the purpose of fire extinguishing is achieved by: igniting the pyrotechnic agent, generating a large quantity of fire substance from the fire extinguishing composition in the use of high temperature produced by burning pyrotechnic agent, and the fire substance sprays out together with the pyrotechnic agent. Compared with the traditional aerosol fire extinguishing systems, the gas fire extinguishing systems and the water type extinguishing systems, the present invention provides a more efficient and safer fire extinguishing composition. | 2013-07-18 |
20130181159 | SURFACE TREATMENT COMPOSITION AND SURFACE TREATMENT METHOD USING SAME - A surface treatment composition of the present invention contains a first surfactant, a second surfactant, a basic compound, and water. The surface treatment composition has a pH of 8 or more. The second surfactant has a weight-average molecular weight one-half or less that of the first surfactant. The sum of the content of the first surfactant and the content of the second surfactant is 0.00001 to 0.1% by mass. | 2013-07-18 |
20130181160 | STABILIZED, PURE LITHIUM METAL POWDER AND METHOD FOR PRODUCING THE SAME - The invention relates to a stabilized lithium metal powder and to a method for producing the same, the stabilized, pure lithium metal powder having been passivated in an organic inert solvent under dispersal conditions with fatty acids or fatty acid esters according to the general formula (I) R—COOR′, in which R stands for C | 2013-07-18 |
20130181161 | POLYTHIOETHERS, MOISTURE CURABLE COMPOSITIONS AND METHODS FOR THEIR MANUFACTURE AND USE - One-part moisture curable sealant compositions and methods of making the same are provided. The compositions include a silyl-functional polythioether and a polyepoxide. Methods of making sealant compositions are also provided. | 2013-07-18 |
20130181162 | Novel Metal Hydrides And Their Use In Hydrogen Storage Applications - This disclosure relates to novel metal hydrides, processes for their preparation, and their use in hydrogen storage applications. | 2013-07-18 |
20130181163 | DISPENSABLE POLYMERIC PRECURSOR COMPOSITION FOR TRANSPARENT COMPOSITE SORBER MATERIALS - A moisture sorbing acrylic-based composition comprising an ethylene glycol dimethacrylate as main liquid component, and a metal perchlorate therein dissolved is described. Use of the composition in order to obtain a moisture sorber material is also described, to be inserted for example in electronic or optoelectronic devices. | 2013-07-18 |
20130181164 | OXYNITRIDE-BASED PHOSPHOR - Disclosure relates to a phosphor formed by using oxynitride having a good durability and possibly emits diverse color of light from green to yellow when using a blue emitting diode or a ultraviolet emitting diode as an excitation source. The phosphor includes a host material represented by the general formula of (Ca | 2013-07-18 |
20130181165 | NITROGEN-CONTAINING GRAPHENE STRUCTURE AND PHOSPHOR DISPERSION - A nitrogen-containing graphene structure has a graphene structure including a monolayer or multilayer graphene nanosheet and nitrogen introduced into the graphene structure. The nitrogen-containing graphene structure preferably includes the above-described graphene structure having a sheet portion comprised of a monolayer or multilayer graphene nanosheet and containing, at an edge portion thereof, an armchair edge-face portion and a terminal six-membered ring bound to the armchair edge-face portion while sharing only one side therewith; and a nitrogen-containing functional group bound to any one or more carbon atoms selected from (a) the carbon atoms constituting the terminal six-membered ring but not bound to the armchair edge-face portion, and (b) the carbon atoms constituting the sheet portion (including the carbon atom on the side shared by the terminal six-membered ring). A phosphor dispersion is a dispersion of such a nitrogen-containing graphene structure in a solvent. | 2013-07-18 |
20130181166 | LIGHT EMITTING BODY - A light emitting body has a base material containing a graphene structure and a covering material for covering a surface of the base material. The graphene structure preferably includes a sheet portion made of a monolayer or multilayer graphene nanosheet and having, at an edge portion thereof, an armchair edge-face portion; and a terminal six-membered ring bound to the armchair edge-face portion while sharing only one side therewith. Further, the graphene structure preferably includes a nitrogen-containing functional group bound to any one or more carbon atoms selected from (a) carbon atoms constituting the terminal six-membered ring but not bound to the armchair edge-face portion, and (b) carbon atoms constituting the sheet portion (including carbon atom on the side shared with the terminal six-membered ring). | 2013-07-18 |
20130181167 | SILICONE RESIN COMPOSITION, LUMINOUS SUBSTANCE-CONTAINING WAVELENGTH-CONVERTING FILM, AND CURED PRODUCT THEREOF - There is disclosed a silicone resin composition includes (A-1) a ladder structure-containing polyorganosiloxane having a ladder structure and having two or more alkenyl groups in one molecule, (B-1) a ladder structure-containing hydrogen polyorganosiloxane having a ladder structure and having hydrogen atoms that are bonded to two or more silicon atoms in one molecule, and/or (B-2) a hydrogen polyorganosiloxane having two or more hydrogen atoms that are bonded to silicon atoms in one molecule. As a result, there is provided the silicone resin composition as a light-emitting device protective material having a high transparency, heat resistance, light resistance and gas barrier. | 2013-07-18 |
20130181168 | Portable Gas Generating Device - Methods and devices for generating gas from nitrous oxide are provided as well as downstream uses for the product gas. Reactor devices of the invention are compact and incorporate a novel heat-exchange/regenerative cooling system to optimize N | 2013-07-18 |
20130181169 | REFORMING OF HYDROCARBON GAS WITH SOLAR ENERGY - A method and system for reforming hydrocarbon gas, which includes stripping from the hydrocarbon gas at least most of gaseous impurities of a type and/or quantity which would normally interfere with efficient catalytic reforming in order to provide stripped hydrocarbon gas including carbon dioxide, optionally compressing the stripped hydrocarbon gas to provide compressed stripped hydrocarbon gas, and reacting the stripped hydrocarbon gas in a solar radiation receiving reactor having a catalyst that is heated by concentrated solar radiation impinging thereon, thereby providing an output gas mixture comprising hydrogen gas and carbon monoxide. The invention also includes a method and system for reforming hydrocarbons in a solar radiation receiver reactor, and such a system that also includes a certification system for certifying the amount and composition of the output gas mixture. | 2013-07-18 |
20130181170 | FINES CAPTURE AND RECYCLE SYSTEM AND USES THEREOF - A cyclone system for a gasifier having two or more cyclones arranged in series sharing a combined loop seal and dipleg is disclosed. Also disclosed is a method for capturing and recycling fines with the cyclone system. | 2013-07-18 |
20130181171 | Metamaterial Optical Elements Self-Assembled on Protein Scaffolds - Protein scaffolds from tobacco mosaic virus coat protein modified to incorporate polyhistidine can bind to a metal or a dye while having improved self-assembly characteristics. The scaffold can take the form of tubes or disks, and can further be formed into dual plasmonic ring resonators. Such self-assembled structures provide useful optical properties. | 2013-07-18 |
20130181172 | CARBON NANAOSTRUCTURE, METAL-SUPPORTED CARBON NANOSTRUCTURE, LITHIUM-ION SECONDARY BATTERY, METHOD FOR PRODUCING CARBON NANOSTRUCTURE, AND METHOD FOR PRODUCING METAL-SUPPORTED CARBON NANOSTRUCTURE - This invention provides a carbon nanostructure including: carbon containing rod-shaped materials and/or carbon containing sheet-shaped materials which are bound three-dimensionally; and graphene multilayer membrane walls which are formed in the rod-shaped materials and/or the sheet-shaped materials; wherein air-sac-like pores, which are defined by the graphene multilayer membrane walls, are formed in the rod-shaped materials and/or the sheet-shaped materials. | 2013-07-18 |
20130181173 | SINTERED COMPOSITE OXIDE, MANUFACTURING METHOD THEREFOR, SPUTTERING TARGET, TRANSPARENT CONDUCTIVE OXIDE FILM, AND MANUFACTURING METHOD THEREFOR - A sintered composite oxide | 2013-07-18 |
20130181174 | METAL-LIGAND COORDINATION COMPOUNDS - The present invention relates to novel metal-ligand coordination compounds of the general formula T1-(A-T2)i, where T1 and T2 represent metal-ligand coordination compounds, to the use thereof in a device, and to a formulation and a device which comprise the novel compounds. | 2013-07-18 |
20130181175 | LOW-TEMPERATURE CO-PRECIPITATION METHOD FOR FABRICATING TCO POWDERS - The present invention discloses a low-temperature co-precipitation method for fabricating TCO powders, which comprises steps: respectively dissolving two or more metals/metal salts in solvents to obtain metal ion solutions; mixing the metal ion solutions to form a precursor solution having a specified composition; enabling a co-precipitation reaction at a temperature lower than 45° C. via adding precipitant in two stages, controlling the temperature of precipitation reactions and undertaking aging processes; flushing, filtering, drying and calcining the precipitates to obtain TCO powders having a specified composition and improved quality. | 2013-07-18 |
20130181176 | SCISSOR MECHANISM AND METHOD OF USE - A scissor mechanism comprises a pair of opposed jaws. The opposed jaws are defined at one end of a rigid member. At least one rigid member is pivotably engaged to a base plate. The base plate is capable of being coupled to a mobilization structure that is capable of being rolled on the ground. For example, the mobilization structure may comprise a jack or a bolt that is capable of raising and lowering the base plate. The jaws provide a strong grip on a portion of the shelving either under the influence of a strong biasing mechanism or by using a lever action to force one or more of the jaws closed onto the portion of the shelving. A bump stop may be adjusted to impinge on another portion of the shelving, which may prevent the shelving from tipping or sliding within the pair of jaws. | 2013-07-18 |
20130181177 | LIFTING DEVICE WITH A TOOTHED BELT AS SUPPORTING MEANS - The invention relates to a lifting device for lifting and lowering loads with a toothed belt which is driven by an output gear and which is positively engaged with the output gear in a wrapping region. In order to provide an improved lifting device, multiple guiding rollers are fixed to the lifting device in the wrapping region such that said rollers maintain the positive engagement between the toothed belt and the output gear. | 2013-07-18 |
20130181178 | BENDABLE POLE FOR WIRE-ROPE SAFETY FENCES - Bendable wire pole ( | 2013-07-18 |
20130181179 | RACKABLE FENCING OF COMPONENTS OPTIMIZED FOR PREASSEMBLY SHIPPING - A rackable fence with a rail, picket carrier, and plurality of pickets. The rail defines a rigid inverted U-shaped cross-section. The picket carrier includes a top span residing within and extending across the interior of the rail. The pickets are pivotally attached to the picket carrier and pivotable toward the rail. | 2013-07-18 |
20130181180 | SEMICONDUCTOR DEVICE - A semiconductor device according to the present invention includes: an unit element which includes a first switch and a second switch, wherein each of the first switch and the second switch includes an electrical resistance changing layer whose state of electrical resistance is changed according to a polarity of an applied voltage, and each of the first switch and the second switch has two electrodes, and wherein one electrode of the first switch and one electrode of the second switch are connected each other to form a common node, and the other electrode of the first switch forms a first node, and the other electrode of the second switch forms a second node; a first wiring which is connected with the first node and forms a signal transmission line; and a second wiring which is connected with the second node and is connected with the first wiring through the unit element. | 2013-07-18 |
20130181181 | MIIIM DIODE HAVING LANTHANUM OXIDE - A MIIIM diode and method of fabricating are disclosed. In one aspect, the MIIIM diode comprises a first metal electrode, a first region comprising a first insulator material having an interface with the first metal electrode, a second region comprising a second insulator material having an interface with the first insulator material, a third region comprising a third insulator material having an interface with the second insulator material, and a second metal electrode having an interface with the third insulator material. At least one of the first, second, or third insulator materials is lanthanum oxide. | 2013-07-18 |
20130181182 | PHASE-CHANGE MEMORY CELL - The memory cell includes a memory area which is formed in a phase-change material pattern based on chalcogenide. An electric pin-type junction is series-connected between electrodes. The pin junction is formed in a crystalline area by the interface between first and second doped areas of the phase-change material pattern. The memory area is formed in one of the two doped areas, at a distance from the junction. | 2013-07-18 |
20130181183 | RESISTIVE MEMORY CELL STRUCTURES AND METHODS - Resistive memory cell structures and methods are described herein. One or more memory cell structures comprise a first resistive memory cell comprising a first resistance variable material and a second resistive memory cell comprising a second resistance variable material that is different than the first resistance variable material. | 2013-07-18 |
20130181184 | NONVOLATILE SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - According to one embodiment, a nonvolatile semiconductor memory device includes fin-type stacked layer structures. Each of the structures includes semiconductor layers stacked in a perpendicular direction. Assist gate electrodes are disposed in an in-plane direction and divided on a surface in the perpendicular direction of the structures. | 2013-07-18 |
20130181185 | TUNNELING FIELD EFFECT TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A tunneling field effect transistor and a method for fabricating the same are provided. The tunneling field effect transistor comprises: a semiconductor substrate and a drain layer formed in the semiconductor substrate, in which the drain layer is first type heavily doped; an epitaxial layer formed on the drain layer, with an isolation region formed in the epitaxial layer; a buried layer formed in the epitaxial layer, in which the buried layer is second type lightly doped; a source formed in the buried layer, in which the source is second type heavily doped; a gate dielectric layer formed on the epitaxial layer, and a gate formed on the gate dielectric layer; and a source metal contact layer formed on the source, and a drain metal contact layer formed under the drain layer. | 2013-07-18 |
20130181186 | INTEGRATION OF CURRENT BLOCKING LAYER AND n-GaN CONTACT DOPING BY IMPLANTATION - An improved method of fabricating a semiconductor light emitting diode (LED) is disclosed. The current blocking layer and the contact area for the n-type layer are implanted at the same time. In some embodiments, a dopant, which may be an n-type dopant, is implanted into a portion of the p-type layer to cause that portion to become either u-type or n-type. Simultaneously, the same dopant is implanted into at least a portion of the exposed n-type layer to increase its conductivity. After this implant, the dopant in both portions of the LED may be activated through the use of a single anneal cycle. | 2013-07-18 |
20130181187 | SEMICONDUCTOR LIGHT EMITTING DEVICE - In one embodiment, a semiconductor light emitting device includes a stacked structure, a first electrode and a second electrode. A first semiconductor layer is broken into several pieces. Light is taken out from a light emitting layer side to a third semiconductor layer side. The first electrode includes a first region connected to the first semiconductor layer and a second region directly connected to the second semiconductor layer. The second electrode is connected to the third semiconductor layer, is provided above the second region from an upper direction of view, and has a thin wire shape or a dot shape. | 2013-07-18 |
20130181188 | III NITRIDE EPITAXIAL SUBSTRATE AND DEEP ULTRAVIOLET LIGHT EMITTING DEVICE USING THE SAME - A III nitride epitaxial substrate which makes it possible to obtain a deep ultraviolet light emitting device with improved light output power is provided. A III nitride epitaxial substrate | 2013-07-18 |
20130181189 | Logic Elements Comprising Carbon Nanotube Field Effect Transistor (CNTFET) Devices and Methods of Making Same - Inverter circuits and NAND circuits comprising nanotube based FETs and methods of making the same are described. Such circuits can be fabricating using field effect transistors comprising a source, a drain, a channel region, and a gate, wherein the first channel region includes a fabric of semiconducting nanotubes of a given conductivity type. Such FETs can be arranged to provide inverter circuits in either two-dimension or three-dimensional (stacked) layouts. Design equations based upon consideration of the electrical characteristics of the nanotubes are described which permit optimization of circuit design layout based upon constants that are indicative of the current carrying capacity of the nanotube fabrics of different FETs. | 2013-07-18 |
20130181190 | NOVEL HETEROLEPTIC IRIDIUM COMPLEXE - Novel heteroleptic iridium complexes are disclosed. The complexes contain a phenyl pyridine ligand and another ligand containing a dibenzofuran, dibenzothiophene, dibenzoselenophene, or carbazole linked to an imidazole or benzimidazole fragment. These complexes are useful materials when incorporated into OLED devices. | 2013-07-18 |
20130181191 | ELECTRONIC DEVICES INCLUDING BIO-POLYMERIC MATERIAL AND METHOD FOR MANUFACTURING THE SAME - An electronic device including a bio-polymer material and a method for manufacturing the same are disclosed. The electronic device of the present invention comprises: a substrate; a first electrode disposed on the substrate; a bio-polymer layer disposed on the first electrode, wherein the bio-polymeric material is selected from a group consisting of wool keratin, collagen hydrolysate, gelatin, whey protein and hydroxypropyl methylcellulose; and a second electrode disposed on the biopolymer material layer. The present invention is suitable for various electronic devices such as an organic thin film transistor, an organic floating gate memory, or a metal-insulator-metal capacitor. | 2013-07-18 |
20130181192 | ORGANIC FLOATING GATE MEMORY DEVICE HAVING PROTEIN AND METHOD OF FABRICATING THE SAME - An organic floating gate memory device having protein and a method of fabricating the same are disclosed. The organic floating gate memory device of the present invention comprises: a substrate; a gate electrode on the substrate; a gate dielectric layer covering the gate electrode; a floating gate on the gate dielectric layer; a protein dielectric layer covering the floating gate; and an organic semiconductor layer, a source and a drain, wherein the organic semiconductor layer, the source and the drain are disposed over the protein dielectric layer | 2013-07-18 |
20130181193 | ORGANIC LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided is an organic light emitting device. The organic light emitting devices includes: a light emitting part where a first electrode, an organic light emitting layer, and a second electrode are stacked ; and a thin film layer having a plurality of holes and micro-resonating the light emitted from the organic light emitting layer. | 2013-07-18 |
20130181194 | ORGANIC LIGHT EMITTING DEVICE - Provided is an organic light emitting device. The organic light emitting device comprising a first light emitting part on a substrate, emitting a first light of a first wavelength, wherein the first light emitting part includes a transparent first electrode, a first organic light emitting layer, and a transparent second electrode sequentially stacked on the substrate, a second light emitting part on the first light emitting part, emitting a second light of a second wavelength, wherein the second light emitting part includes a transparent third electrode, a second organic light emitting layer, and a reflective fourth electrode sequentially stacked on the first light emitting part, and a fluorescent material disposed at least one between the substrate and the first light emitting part, and between the first light emitting part and second light emitting part. | 2013-07-18 |
20130181195 | ORGANIC LIGHT EMITTING DEVICE - Provided is an organic light emitting device. The organic light emitting device includes: a first electrode on a substrate, a second electrode on the first electrode, an organic light emitting layer between the first electrode and the second electrode, an embossing layer between the first electrode and the substrate and a planarization layer between the first electrode and the embossing layer. | 2013-07-18 |
20130181196 | COMPOUNDS AND ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention provides a new compound and an organic electronic device using the same. The organic electronic device according to the present invention exhibits excellent properties in views of efficiency, driving voltage and a life span. | 2013-07-18 |
20130181197 | ORGANIC ELECTROLUMINESCENT DEVICES - Organic electroluminescent devices are provided. The organic electroluminescent device may includes a first light emitting part including a transparent first electrode, a first organic light emitting layer, and a transparent second electrode which are stacked, and a capping layer stacked on the first light emitting part. The first light emitting part emits light of a first wavelength, and the capping layer reflects the light of the first wavelength and transmits light of a second wavelength. Thus, the lights of the first and second wavelengths are emitted in high efficiency. | 2013-07-18 |
20130181198 | POLYMERS, OPTICAL FILMS, ORGANIC ELECTROLUMINESCENT DEVICES, AND METHODS OF MANUFACTURING THE OPTICAL FILM - Disclosed are polymers, optical films, organic electroluminescent devices, and methods of manufacturing the optical film. The polymer and the optical film according to the inventive concept may include a high refractive material chemically combined with a polymer matrix and a low refractive material chemically combined with the polymer matrix. The low refractive material has a lower refractive index than the high refractive material. Thus, the polymer and the optical film may function as a light scattering layer including the low and high refractive materials chemically combined with the polymer matrix, or a light scattering layer including a high refractive film and low refractive particles dispersed within the high refractive film. | 2013-07-18 |
20130181199 | Thermo-oxidatively Stable, Side Chain Polyether Functionalized Polynorbornenes for Microelectronic and Optoelectronic Devices and Assemblies Thereof - The present invention relates to polynorbornene (PNB) composition embodiments that are useful for forming microelectronic and/or optoelectronic devices and assemblies thereof, and more specifically to compositions encompassing PNBs having norbornene-type repeating units that are polyether functionalized where such the PNBs of such compositions and the microelectronic and/or optoelectronic devices made therefrom are resistant to thermo-oxidative chain degradation of said polyether functionalization. | 2013-07-18 |
20130181200 | THIN-FILM TRANSISTOR, FABRICATION METHOD THEREOF, AND IMAGE DISPLAY DEVICE - A method for fabricating a thin-film transistor is provided whereby isolation of transistor devices is realized and the performance and the stability of the product thin-film transistor are improved. The thin-film transistor includes a substrate; a gate electrode laminated on the substrate; a gate insulating layer laminated on the substrate and the gate electrode; a recessed portion provided in the gate insulating layer; a semiconductor layer formed in the recessed portion of the gate insulating layer; and a source electrode and a drain electrode connected to the semiconductor layer at respective positions which are spaced apart from each other. | 2013-07-18 |
20130181201 | DEUTERATED COMPOUNDS FOR ELECTRONIC APPLICATIONS - This invention relates to deuterated aryl-anthracene compounds that are useful in electronic applications. It also relates to electronic devices in which the active layer includes such a deuterated compound. | 2013-07-18 |
20130181202 | PHOTOELECTRIC CONVERSION MATERIAL, FILM CONTAINING THE MATERIAL, PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR PREPARING PHOTOELECTRIC CONVERSION DEVICE, METHOD FOR USING PHOTOELECTRIC CONVERSION DEVICE, PHOTOSENSOR AND IMAGING DEVICE - There is provided a compound represented by a specific formula, which has an absorption maximum at 400 nm or more and less than 720 nm in a UV-visible absorption spectrum, wherein a molar extinction coefficient is 10,000 mol | 2013-07-18 |
20130181203 | Display Device - At least two TFTs which are connected with a light emitting element are provided, crystallinities of semiconductor regions composing active layers of the respective TFTs are made different from each other. As the semiconductor region, a region obtained by crystallizing an amorphous semiconductor film by laser annealing is applied. In order to change the crystallinity, a method of changing a scan direction of a continuous oscillating laser beam so that crystal growth directions are made different from each other is applied. Alternatively, a method of changing a channel length direction of TFT between the respective semiconductor regions without changing the scan direction of the continuous oscillating laser beam so that a crystal growth direction and a current flowing direction are different from each other is applied. | 2013-07-18 |
20130181204 | Image Display Device And The Method For Manufacturing The Same - An image display device includes a resin film, an organic film which is formed above the resin film, a circuit layer which is formed above the organic film and includes at least a thin film transistor, and a barrier layer which is formed between the organic film and the circuit layer. The organic film has a first surface which faces the circuit layer and a side surface which crosses the first surface. The barrier layer covers the first surface and the side surface. | 2013-07-18 |
20130181205 | ORGANIC EL ELEMENT - An object of the invention is to provide an organic EL element formed using a relatively stable new electron injection material in an atmosphere of approximately ordinary pressure. An organic EL element of a preferable embodiment is an organic EL element including a supporting substrate, an anode, a light-emitting layer, an electron injection layer, and a cathode in this order, in which the electron injection layer is formed by applying an ink including an ionic polymer so as to form a film, and the cathode is formed by applying an ink including a material which forms the cathode so as to form a film or transferring a conductive thin film which forms the cathode. | 2013-07-18 |
20130181206 | ORGANIC EL DEVICE - An organic EL device with a light diffusing element that includes a matrix containing a resin component and an ultrafine particle component, and a light diffusing fine particle dispersed in the matrix. Refractive indices of the resin component, the ultrafine particle component, and the light diffusing fine particle satisfy the following expression (1). Further, the light diffusing element includes a concentration adjusted area formed outside a vicinity of a surface of the light diffusing fine particle, in which a weight concentration of the resin component decreases and a weight concentration of the ultrafine particle component increases as a distance from the light diffusing fine particle increases. | 2013-07-18 |
20130181207 | ORGANIC ELECTROLUMINESCENSCE DEVICE AND MANUFACTURING METHOD THEREOF - An organic electroluminescence device comprises the following structure: a conductive base ( | 2013-07-18 |
20130181208 | SEMICONDUCTOR VOLTAGE TRANSFORMATION STRUCTURE - A semiconductor voltage transformation structure is provided. The semiconductor voltage transformation structure includes: a first electrode layer; an electricity-to-light conversion layer formed on the first electrode layer; a second electrode layer formed on the electricity-to-light conversion layer; a first isolation layer formed on the second electrode layer; a third electrode layer formed on the first isolation layer; a light-to-electricity conversion layer formed on the third electrode layer; and a fourth electrode layer formed on the light-to-electricity conversion layer, in which the first isolation layer, the second electrode layer and the third electrode layer are transparent to a working light emitted by the electricity-to-light conversion layer. | 2013-07-18 |
20130181209 | VAPOR DEPOSITION METHOD, VAPOR DEPOSITION DEVICE AND ORGANIC EL DISPLAY DEVICE - A coating film ( | 2013-07-18 |
20130181210 | HIGH-PERFORMANCE HETEROSTRUCTURE FET DEVICES AND METHODS - A layered heterostructure field effect transistor (HFET) comprises a substrate, a first semiconductor oxide layer grown on the substrate, and a second semiconductor oxide layer grown on the first layer semiconductor layer and having an energy band gap different from that of the first semiconductor layer, and the second layer also having a gate region and a drain region and a source region with electrical contacts to gate, drain and source regions sufficient to form a HFET. The substrate may be a material, including a single crystal material, and may contain a buffer layer material on which the first semiconductor layer is grown. The conductivity type of the first and second semiconductor layers and the composition of the semiconductor oxide layers can be selected to improve performance for desired operational features of the HFET. This layered structure can be applied for the improvement in the function and high frequency and high power performance of semiconductor HFET devices. | 2013-07-18 |
20130181211 | METAL OXIDE SEMICONDUCTOR DEVICE - Provided is a metal oxide semiconductor device, including a substrate, a gate, a first-type first heavily doped region, a first-type drift region, a second-type first heavily doped region, a contact, a first electrode, and a second electrode. The gate is disposed on the substrate. The first-type first heavily doped region is disposed in the substrate at a side of the gate. The first-type drift region is disposed in the substrate at another side of the gate. The second-type first heavily doped region is disposed in the first-type drift region. The contact is electrically connected to the second-type first heavily doped region. The contact is the closest contact to the gate on the first-type drift region. The first electrode is electrically connected to the contact, and the second electrode is electrically connected to the first-type first heavily doped region and the gate. | 2013-07-18 |
20130181212 | SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME - A semiconductor device includes: a substrate, a semiconductor layer including an oxide semiconductor disposed on the substrate, a barrier layer disposed on the semiconductor layer and an insulating layer disposed on the barrier layer. The semiconductor layer includes an oxide semiconductor, and the barrier layer includes a material having a lower standard electrode potential than a semiconductor material of the oxide semiconductor, a lower electron affinity than the semiconductor material of the oxide semiconductor, or a larger band gap than the semiconductor material of the oxide semiconductor. The insulating layer includes at least one of a silicon-based oxide or a silicon-based nitride, and the insulating layer includes a portion which contacts with an upper surface of the barrier layer. | 2013-07-18 |
20130181213 | THIN FILM FUNCTIONAL FOR TOUCH SCREEN AND METHOD FOR FORMING THE SAME - Provided is a functional thin film having a transparent substrate; a transparent semiconductor layer that is formed on the transparent substrate and contains an oxide transparent in a visible ray region; and an insulating protective film formed on the transparent semiconductor layer, wherein a surface resistance of the transparent semiconductor layer is in a range of from 10 MΩ/□ to 100 MΩ/□. | 2013-07-18 |
20130181214 | SEMICONDUCTOR DEVICE - The semiconductor device includes a transistor including an oxide semiconductor film having a channel formation region, a gate insulating film, and a gate electrode layer. In the transistor, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the thickness of the gate insulating film is large (equivalent oxide thickness which is obtained by converting into a thickness of silicon oxide containing nitrogen is 5 nm or more and 50 nm or less, preferably 10 nm or more and 40 nm or less). Alternatively, the channel length is small (5 nm or more and less than 60 nm, preferably 10 nm or more and 40 nm or less), and the resistivity of the source region and the drain region is 1.9×10 | 2013-07-18 |
20130181215 | ROTATED CHANNEL SEMICONDUCTOR FIELD EFFECT TRANSISTOR - A transistor device, such as a rotated channel metal oxide/insulator field effect transistor (RC-MO(I)SFET), includes a substrate including a non-polar or semi-polar wide band gap substrate material such as an Al | 2013-07-18 |
20130181216 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of memory cells including a first transistor and a second transistor, a reading circuit including an amplifier circuit and a switch element, and a refresh control circuit. A first channel formation region and a second channel formation region contain different materials as their respective main components. A first gate electrode is electrically connected to one of a second source electrode and a second drain electrode. The other of the second source electrode and the second drain electrode is electrically connected to one of input terminals of the amplifier circuit. An output terminal of the amplifier circuit is connected to the other of the second source electrode and the second drain electrode through the switch element. The refresh control circuit is configured to control whether the switch element is turned on or off. | 2013-07-18 |
20130181217 | SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE AND DISPLAY DEVICE - A semiconductor device ( | 2013-07-18 |
20130181218 | WIRING STRUCTURE AND DISPLAY DEVICE - An interconnection structure includes a semiconductor layer of a thin-film transistor and a metal interconnection film above a substrate in this order from a side of the substrate, and includes a barrier layer between the semiconductor layer and the metal interconnection film. The semiconductor layer is composed of an oxide semiconductor. The barrier layer is composed of a Ti oxide film containing TiOx (where x is from 1.0 to 2.0), and the Ti oxide film is directly connected to the semiconductor layer. The oxide semiconductor is composed of an oxide containing at least one element selected from the group consisting of In, Ga, Zn and Sn. | 2013-07-18 |
20130181219 | SEMICONDUCTOR GROWTH SUBSTRATES AND ASSOCIATED SYSTEMS AND METHODS FOR DIE SINGULATION - Semiconductor growth substrates and associated systems and methods for die singulation are disclosed. A representative method for manufacturing semiconductor devices includes forming spaced-apart structures at a dicing street located between neighboring device growth regions of a substrate material. The method can further include epitaxially growing a semiconductor material by adding a first portion of semiconductor material to the device growth regions and adding a second portion of semiconductor material to the structures. The method can still further include forming semiconductor devices at the device growth regions, and separating the semiconductor devices from each other at the dicing street by removing the spaced-apart structures and the underlying substrate material at the dicing street. | 2013-07-18 |
20130181220 | METHOD FOR ESTIMATING THE DIFFUSION LENGTH OF METALLIC SPECIES WITHIN A THREE-DIMENSIONAL INTEGRATED STRUCTURE, AND CORRESPONDING THREE-DIMENSIONAL INTEGRATED STRUCTURE - A three-dimensional integrated structure may include two assembled integrated circuits respectively including two metallic lines, and at least two cavities passing through one of the integrated circuits and opening onto two locations respectively in electrical contact with the two metallic lines. The cavities may be sized to place a measuring apparatus at the bottom of the cavities, and in electrical contact with the two locations. | 2013-07-18 |
20130181221 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A circuit including an inverter is provided for a wiring layer. | 2013-07-18 |
20130181222 | THIN FILM TRANSISTOR ARRAY BASEPLATE - An embodiment of the present invention provides a TFT array substrate comprising: a base substrate ( | 2013-07-18 |