27th week of 2022 patent applcation highlights part 51 |
Patent application number | Title | Published |
20220215974 | REACTOR CONTAINMENT BUILDING SPENT FUEL POOL FILTER VENT - A nuclear containment atmospheric filter including dedicated piping, valves, a control system and a chemical injection system to facilitate the use of a commercial nuclear power plant's Spent Fuel Storage Pool and Spent Fuel Storage Pool Cooling System to filter and cool contaminated air and steam vapor released from within a Reactor Containment Vessel/Building preventing vessel overpressure and radioactive release. | 2022-07-07 |
20220215975 | DOUBLE CONTAINMENT NUCLEAR POWER REACTOR WITH PASSIVE COOLING AND RADIATION SCRUBBING - A nuclear power reactor which includes passive cooling and radiation scrubbing. The reactor includes a first containment member which is buried in the ground. A second containment member is positioned in the first containment member and has a reactor vessel therein. The discharge side of the reactor vessel is connected to a heat exchanger which drives a turbine which drives a device such as a generator. A source of water is provided which gravity feeds cooling water to the interior of the first containment member in the event of reactor overheating or over-pressurization. A radiation scrubber is provided for scrubbing radiation which may be in the first containment member or the second containment member. | 2022-07-07 |
20220215976 | NUCLEAR POWER STATION USING SPENT NUCLEAR FUEL RODS AS NEUTRON SOURCE AND USING THORIUM (Th) AS NUCLEAR FUEL - In the present invention, a nuclear power plant using U235 as nuclear fuel is converted into a nuclear power plant that uses spent nuclear fuel rods as the Nt source and that uses Th as nuclear fuel. The nuclear power plant using U235 as nuclear fuel is converted into a nuclear power plant using Th as nuclear fuel. | 2022-07-07 |
20220215977 | METHOD OF REMOVING FOREIGN SUBSTANCES FROM CRDM AND DEVICE FOR EXECUTING SAME - A method of removing floating foreign substances that may interfere with a normal operation of an electromechanical mechanism of a control rod drive mechanism and a device for executing the same are provided. The method of removing the foreign substances from the control rod drive mechanism comprising a driving shaft including a plurality of teeth and disposed in a vertical direction in the control rod drive mechanism, a first part configured to hold or release a lower end portion of the driving shaft depending on whether a stationary gripper coil is activated, a second part configured to hold or release an intermediate portion of the driving shaft depending on whether a movable gripper coil is activated, and a third part configured to move the second part in the vertical direction depending on whether a lift coil is activated may include: activating at least one of the stationary gripper coil, the movable gripper coil, and the lift coil to drive the first part, the second part, or the third part in a state in which the driving shaft is not able to move; and removing the foreign substances from the first part, the second part, or the third part. | 2022-07-07 |
20220215978 | METHOD AND APPARATUS FOR IMPROVED REMOVAL AND RETENTION OF RADIOACTIVE PARTICULATES FROM FLUIDS - A method and apparatus for improved separation and containment of radioactive particulates from liquids by filtration. The improvements are achieved by utilizing more than one stage of filtration to remove radioactive particulates from a fluid. The first stage of filtration is designed for high liquid flowrate, low differential pressure across the filter medium, and reversibility of flow through the medium to facilitate backwashing. The second or more stages of filtration receive the backwash flow and captured particulates from the first stage at a lower flowrate, but at high pressure using a high-pressure pump configured between the stages. | 2022-07-07 |
20220215979 | METHOD AND SYSTEM FOR PRODUCING MEDICAL RADIOISOTOPES - The invention relates to a method and a system for producing radioisotopes, and specifically, the method and system for producing radioisotopes including generating one or more among actinium-225 ( | 2022-07-07 |
20220215980 | VORTEX-PAIR BEAM BASED OPTICAL TWEEZER SYSTEM - The present disclosure discloses a vortex-pair beam based optical tweezer system, including a laser device ( | 2022-07-07 |
20220215981 | ELECTRICALLY CONDUCTIVE POLYMER COMPOSITION AND METHOD FOR STABLY STORING ELECTRICALLY CONDUCTIVE POLYMER SOLUTION - The present invention relates to an electrically conductive polymer composition having high dispersion stability in long-term storage without being influenced by air temperature changes in the winter season, the summer period, etc. and a method for stably storing an electrically conductive polymer solution. An electrically conductive polymer composition comprising at least a N-vinyl carboxylic acid amide polymer having a weight-average molecular weight within the range of not less than 5000 and not more than one million, an electrically conductive polymer, and a solvent. A method for stably storing an electrically conductive polymer solution, the method comprising adding, to an electrically conductive polymer solution, a N-vinyl carboxylic acid amide polymer having a weight-average molecular weight within the range of not less than 5000 and not more than one million. | 2022-07-07 |
20220215982 | FLEXIBLE WIRING MEMBER - There is provided a flexible wiring member capable of electrically connecting desired points separated in a length direction. The flexible wiring member includes conductor holding layers that are formed in a state of being stacked in a thickness direction and being electrically insulated from one another; power supply line conductors that have a wide width and are respectively disposed in both of a first conductor holding layer and a second conductor holding layer adjacent to each other in the thickness direction; and communication line conductors that have a width smaller than that of the power supply line conductors and are disposed in one of the first conductor holding layer and the second conductor holding layer, in which the conductor holding layers are formed by an insulating resin, and directly cover the power supply line conductors and the communication line conductors. | 2022-07-07 |
20220215983 | WIRING MEMBER - An object is to provide a technique that can stabilize the positional relationship between a plurality of wires while enabling a wire to be attached afterwards. A wiring member includes a plurality of wires and a holding member for holding the plurality of wires. The plurality of wires include a power line and a communication line that extend in the same direction. The holding member includes a plurality of wire holding portions that each can hold a wire at a fixed position. The power line is held by a first wire holding portion of the plurality of wire holding portions. The communication line is held by a second wire holding portion of the plurality of wire holding portions. At least one of the plurality of wire holding portions is formed to be capable of retrofittably holding the wire. | 2022-07-07 |
20220215984 | WIRING MEMBER - A wiring member includes: a plurality of wire-like transmission members; and a sheet to which the plurality of wire-like transmission members arranged side by side are fixed, wherein the sheet includes a first sheet covering the plurality of wire-like transmission members from one side and a second sheet covering the plurality of wire-like transmission members from another side, and a planar surface region part is provided on an outer side of the second sheet. | 2022-07-07 |
20220215985 | COMBINATION CABLE FOR ELECTRICAL ENERGY AND DATA TRANSMISSION - A combination cable for electrical energy and data transmission has one or more high-current lines and a first data line pair, which has two intertwined data lines that are at least partly surrounded by an at least partly electrically conductive sheath. The combination cable furthermore has a second data line pair that has two data lines that are spaced from one another. The data lines that are spaced from one another of the second data line pair are each arranged on an outer surface of the at least partly electrically conductive sheath of the first data line pair. | 2022-07-07 |
20220215986 | CABLE - A cable includes: a core wire; an insulating layer covering the core wire in an extrusion molding manner, a shielding layer covering the insulating layer, and a sheath covering the shielding layer, the core wire comprising a pair of inner conductors and the inner insulating layer of the pair of inner conductors are simultaneously covered by extrusion molding. Under the premise of ensuring impedance matching, the cable reduces the distance between the two conductors, so that the cable has lower insertion loss, and the overall size of the cable is also smaller, at the same time, the cable has a high-speed data transmission capability with a signal frequency greater than 40 GHz. | 2022-07-07 |
20220215987 | CABLE - A cable includes: a pair of wires including two inner conductors and a respective insulating layer covering each of the two inner conductors; a first shielding layer covering the pair of wires; a second shielding layer covering the first shielding layer; and an outer coating layer covering the second shielding layer, wherein the insulation layer is covered with a sheath layer that is simultaneously extruded and formed, and the sheath layer covers the wires so that the two wires abut each other in parallel. | 2022-07-07 |
20220215988 | CABLE - A cable includes: a pair of core wires; a shielding layer covering the pair of core wires; and an outer insulating layer covering the shielding layer, wherein each of the core wires includes an inner conductor, an inner insulating layer covering the inner conductor, and a first shielding layer covering the inner insulating layer, and each core wire includes only one inner conductor. | 2022-07-07 |
20220215989 | ANISOTROPIC CONDUCTIVE FILM (ACF) STRUCTURE AND HOT-PRESSING METHOD AND HOT-PRESSING ASSEMBLY THEREOF - An anisotropic conductive film (ACF) structure and a hot-pressing method and a hot-pressing assembly thereof are provided. The ACF structure includes an ACF and a copper/gold foil surface layer as a substrate. The ACF structure is hot-pressed by a hot-pressing method, which includes the following steps: allowing, when the ACF is in a molten state, the copper/gold foil surface layer and a bonded part to be conductive respectively to generate a magnetic field around to enhance the attraction of the copper/gold foil surface layer and the bonded part to conductive particles inside the ACF; and applying, when the ACF is in a curing stage, a closed circuit to ends of the copper/gold foil surface layer and the bonded part to perform real-time detection on the ACF to ensure the effectiveness of the hot pressing. | 2022-07-07 |
20220215990 | BATCHING SYSTEM FOR PRODUCING SPECIAL CABLES - A batching system for producing special cables includes a motor, a loading plate, wire pulling rollers, a transmission steel pipe and a batching motor; the transmission steel pipe is rotatably connected to an upper end surface of the loading plate by a bracket; the motor is fixedly arranged on a side wall of a mounting bracket; the wire pulling rollers are rotatably connected to an upper end surface of the loading plate; the system further includes: a wiring mechanism, a replacing mechanism and a driving mechanism; the wiring mechanism is coaxially and fixedly connected with an outer end surface of the transmission steel pipe; the replacing mechanism is sleeved on the outer end surface of the transmission steel pipe; the driving mechanism is fixedly mounted on a lower end surface of the loading plate; a winding mechanism for winding wires is coaxially and fixedly arranged on the transmission steel pipe. | 2022-07-07 |
20220215991 | COERCIVITY-ENHANCED IRON NITRIDE NANOPARTICLES WITH HIGH SATURATION MAGNETIZATION - Iron nitride nanoparticles and magnet materials made from iron nitride nanoparticles are described. The iron nitride nanoparticles have a core and a shell morphology. The shell is configured to provide a means to nitride the core. The magnetic materials are characterized as having an Msat greater than about 160 emu/g and a coercivity greater than about 700 Oe. | 2022-07-07 |
20220215992 | MULTILAYER INDUCTOR - A multilayer inductor is provided. The multilayer inductor includes a multilayer winding portion comprising a plurality of coil layers that are vertically stacked, and having an inner surface that defines a hollow of the plurality of coil layers and having an outer surface that defines an outer side and a magnetic compensator made of a soft magnetic material and comprising a magnetic wall located at at least one of the inner surface or the outer surface of the multilayer winding portion. | 2022-07-07 |
20220215993 | SUPERCONDUCTING COIL AND METHOD OF MANUFACTURING THE SAME - In a step of inserting each of a plurality of disk-shaped windings into a recessed groove portion of a corresponding one of a plurality of ring-shaped fixing portions, each of the plurality of disk-shaped windings is inserted in a state where an outer circumferential surface of each of the plurality of disk-shaped windings is spaced apart from a bottom surface of the recessed groove portion of a corresponding one of the plurality of ring-shaped fixing portions. In a step of bringing the outer circumferential surface of each of the plurality of disk-shaped windings into direct or indirect contact with the bottom surface of the recessed groove portion of the corresponding one of the plurality of ring-shaped fixing portions, each of the plurality of disk-shaped windings and an outer frame portion are cooled and contracted for contact. | 2022-07-07 |
20220215994 | WOUND HTS MAGNET COILS - A method of manufacturing an HTS coil is provided. The method comprises winding an ITS coil cable to produce a coil having a plurality of turns. During winding of a turn of the coil, one or more HTS shunt cables are placed adjacent to the previous turn of the coil along a first arc of the coil, and then the turn is wound such that the HTS shunt cable is sandwiched between the turn and the previous turn of the coil such that current can be shared between the HTS shunt cable and the HTS coil cable. | 2022-07-07 |
20220215995 | COIL ASSEMBLY FOR BREAKING VEHICLE AND BRAKE APPARATUS HAVING THE SAME - A coil assembly for vehicle braking includes a hollow bobbin configured to allow a coil to be wound along an outer circumferential surface thereof, and having at least one engagement protrusion formed on an upper surface and/or a lower surface, a plurality of lead pins coupled with the bobbin to supply current to the coil, a plurality of pin assembly units formed on two side ends of the bobbin to fix the lead pins and connect the lead pins to the coil and a hollow case configured to surround at least a portion of the bobbin, and formed to be bent in the upper and lower portions in a first direction to be attached to the upper and lower surfaces of the bobbin. | 2022-07-07 |
20220215996 | REACTOR - A reactor is provided with a coil including a pair of winding portions, a magnetic core to be arranged inside and outside the winding portions, a holding member for specifying mutual positions of the coil and the magnetic core, a case for accommodating an assembly including the coil, the magnetic core and the holding member, and a sealing resin portion to be filled into the case. The case includes a bottom plate portion on which the assembly is placed, a side wall portion for surrounding the assembly, and an opening facing the bottom plate portion. The side wall portion includes a pair of long side parts facing each other and a pair of short side parts facing each other. The assembly is so accommodated into the case that an axial direction of each winding portion is along a depth direction of the case. | 2022-07-07 |
20220215997 | Power Conversion Device - A power conversion device includes an electronic component, a first printed board, a first cooling body, a second printed board, a second cooling body, a third printed board, and a third cooling body. The second cooling body extends from a second principal surface toward a first principal surface of the first printed board. The third cooling body extends from a second principal surface toward the first principal surface of the first printed board. | 2022-07-07 |
20220215998 | MULTILAYER ELECTRONIC COMPONENT - An electronic component includes a common port, a first signal port that selectively passes a first signal of a frequency within a first passband, a second signal port that selectively passes a second signal of a frequency within a second passband higher than the first passband, a first resonator provided between the common port and the first signal port in a circuit configuration, a second resonator provided between the common port and the second signal port in the circuit configuration, a stack, and a shield that covers a part of a surface of the stack. The shield includes a specific portion opposed to both the first and second resonators. A distance between the second resonator and the specific portion is greater than a distance between the first resonator and the specific portion. | 2022-07-07 |
20220215999 | MAGNETIC MODULE AND METHOD OF MAKING THE SAME AND ELECTRICAL CONNECTOR INCLUDING THE MAGNETIC MODULE - A magnetic module includes: a magnetic core; and plural enameled wires wound on the magnetic core, the enameled wire being wound on the magnetic core to form a primary coil and a secondary coil, the primary coil including a first group of enameled wires and a second group of enameled wires, the secondary coil including a third group of enameled wires and a fourth group of enameled wires, wherein the parts of the first group of enameled wires and the fourth group of enameled wires wound around the magnetic core are twisted together to form a first stranded wire, the parts of the second group of enameled wires and the third group of enameled wires wound around the magnetic core are twisted together to form a second stranded wire, and the first stranded wire and the second stranded wire are twisted together to form a total stranded wire. | 2022-07-07 |
20220216000 | MAGNETIC MODULE AND ELECTRICAL CONNECTOR INCLUDING THE MAGNETIC MODULE - A magnetic module includes: a magnetic core; and plural enameled wires wound on the magnetic core, the enameled wire being wound on the magnetic core to form a primary coil and a secondary coil, the primary coil forming a primary input end, a primary output end, and a primary center tap, the secondary coil forming a secondary input end, a secondary output end, and a secondary center tap, wherein one of the primary coil and the secondary coil includes four groups of enameled wires, and the other includes one group of enameled wires. | 2022-07-07 |
20220216001 | PLANAR TRANSFORMER, POWER CONVERTER AND CIRCUIT BOARD - A planar transformer includes a secondary coil layer, a shielding layer and a primary coil layer disposed in a PCB. The secondary coil layer includes at least part of a secondary coil. The secondary coil are provided with a secondary static electrical point. The shielding layer includes a shielding coil which includes a shielding coil segment of N1 turns and a second shielding coil segment of N2 turns. The first shielding coil segment includes a first shielding static electrical point and a first shielding free end. The second shielding coil segment includes a second shielding static electrical point and a second shielding free end. The winding direction of the first shielding coil segment is the same as the secondary coil, and the winding direction of the first shielding coil segment is opposite to the second shielding coil segment. | 2022-07-07 |
20220216002 | COIL COMPONENT - A coil component includes a body, a support substrate, a coil portion on one surface of the support substrate, and first and second external electrodes disposed on the body and connected to the coil portion. 100 μm≤0.5*b*tan θ, where, on a cross-section perpendicular to the one surface of the support substrate, P | 2022-07-07 |
20220216003 | MULTILAYER INDUCTOR AND MOUNTING STRUCTURE OF MULTILAYER INDUCTOR - A multilayer inductor includes: an element body formed by stacking a plurality of layers of insulators in a stacking direction; a terminal electrode provided on at least one side surface of the element body; and a linear conductor portion provided in the element body and extending in a first direction, wherein, as viewed from a second direction perpendicular to the first direction, the conductor portion has a first portion in a region overlapping the terminal electrode and a second portion in a region not overlapping the terminal electrode, and wherein a width of the first portion as viewed from the second direction is smaller than a width of the second portion. | 2022-07-07 |
20220216004 | 110 kV Three-phase Dry-type Transformer and Assembly Method Therefor - Provided is a three-phase dry-type transformer. The three-phase dry-type transformer comprises three single-phase dry-type transformers connected to each other. Each single-phase transformer comprises an incoming line side high-voltage coil and an outgoing line side high-voltage coil, wherein the incoming line side high-voltage coil is provided with an incoming line end and an outgoing line end, and the outgoing line side high-voltage coil is provided with an incoming line end and an outgoing line end. The outgoing line end of the incoming line side high-voltage coil is connected to the incoming line end of the outgoing line side high-voltage coil, such that the incoming line side high-voltage coil and the outgoing line side high-voltage coil are connected in series. Further provided is an assembly method. | 2022-07-07 |
20220216005 | METHOD FOR CARRYING OUT A SWITCHOVER OF AN ON-LOAD TAP CHANGER USING A DRIVE SYSTEM, AND DRIVE SYSTEM FOR AN ON-LOAD TAP CHANGER - A method carries out a switchover of an on-load tap-changer using a drive system. The drive system includes at least one motor which acts on a drive shaft, a control device and an encoder system which is directly or indirectly coupled to the drive shaft. The method includes receiving a signal for switching the on-load tap-changer from the control device; determining by the control device whether switching to a current tap was performed from an upward or downward direction, and whether switching will be performed to a next tap in the upward or downward direction; selecting, on the basis of the determination, one of a plurality of travel profiles for the drive system of the on-load tap-changer, on the basis of which the switchover is carried out; and carrying out and monitoring the switchover by the drive system according to the selected travel profile. | 2022-07-07 |
20220216006 | CAPACITIVE BLOCK COMPRISING A FRAME OF ELECTRICALLY INSULATING MATERIAL - The invention relates to a capacitive block ( | 2022-07-07 |
20220216007 | Multilayer Ceramic Capacitor Having Ultra-Broadband Performance - A broadband multilayer ceramic capacitor can include at least one active electrode layer including a first active electrode and a second active electrode. The first active electrode can have a central portion extending away from a base portion in a longitudinal direction. The second active electrode can include at least one arm extending away from a base portion towards the first end and overlapping the central portion of the first active electrode. A first shield electrode in a shield electrode region can have a central portion extending from a base portion. A second shield electrode can include an arm overlapping the central portion of the first shield electrode in the longitudinal direction. The shield electrode region can be spaced apart from the active electrode region by a shield-to-active distance that is greater than an active electrode spacing distance between respective active electrodes of the plurality of active electrodes. | 2022-07-07 |
20220216008 | MULTILAYER ELECTRONIC COMPONENT - A multilayer electronic component includes a body including a plurality of first dielectric layers, an active portion in which internal electrodes are alternately disposed, and a cover portion disposed the active portion in a first direction of the body, a direction in which the plurality of first dielectric layers are laminated, and including a second dielectric layer; and an external electrode disposed externally on the body and connected to one of the internal electrodes. The body includes a margin portion covering a side surface of the one of the internal electrodes other than a side surface connected to the external electrode and including a dielectric pattern having a porosity higher than that of one of the plurality of first dielectric layers. | 2022-07-07 |
20220216009 | MULTI-LAYER CERAMIC ELECTRONIC COMPONENT - A multilayer ceramic electronic component includes a ceramic body, and first and second external electrodes disposed on the surface of the ceramic body, respectively. The ceramic body includes a capacitance forming portion including a dielectric layer and internal electrodes, margin portions disposed on both sides of the capacitance forming portion, and cover portions disposed on both sides of the capacitance forming portion. The first and second external electrodes include first and second base electrodes, respectively, first and second conductive layers disposed on edges of the first and second base electrodes, respectively, and first and second terminal electrodes covering the first and second base electrodes, respectively. | 2022-07-07 |
20220216010 | MULTILAYER CERAMIC ELECTRONIC COMPONENT AND BOARD HAVING THE SAME MOUNTED THEREON - A multilayer ceramic electronic component includes a multilayer capacitor including a capacitor body, and first and second external electrodes disposed on both side surfaces of the capacitor body, respectively; first and second metal frames disposed on both side surfaces and upper and lower surfaces of the multilayer capacitor; and an exterior insulating portion disposed to surround upper surfaces of the multilayer capacitor and the first and second metal frames. A shortest distance from an upper end of the exterior insulating portion to the external electrodes is defined as G1, a shortest distance from a lower end of the exterior insulating portion to the external electrodes is defined as G2, a maximum distance from upper ends of the external electrodes to lower ends is defined as T, and G1, G2, and T satisfy G1≤G2≤T/2. | 2022-07-07 |
20220216011 | Multilayer Ceramic Capacitor Having Ultra-Broadband Performance - A broadband multilayer ceramic capacitor may include a first external terminal and a second external terminal. A bottom portion of the first external terminal may be spaced apart from a bottom portion of the second external terminal by a bottom external terminal spacing distance. A first active electrode layer may include a first active electrode connected with the first external terminal and a second active electrode connected with the second external terminal and co-planar with the first electrode. A second active electrode layer may include a third active electrode connected to the first external terminal and a fourth active electrode connected to the second external terminal and co-planar with the fourth electrode. The first active electrode may overlap the fourth active electrode in the longitudinal direction. A ratio of a length of the capacitor to the bottom external terminal spacing distance may be greater than about 4. | 2022-07-07 |
20220216012 | POWERED VANITY PULLOUT - A powered vanity system with a power outlet positioned on the bottom of a drawer box adjacent a face plate with a pressure switch the prevents the flow of electricity to the power outlet when the drawer box is in a closed position and allows the flow of electricity to the power outlet when the drawer box is in an open position. A cable manager controls the power cord as the drawer box moves between open and closed positions. The drawer box is easily removable from the cabinet carcass and provides for a novel convenience lighting system. | 2022-07-07 |
20220216013 | SWITCH ASSEMBLY WITH DRIVE SYSTEM, AND METHOD FOR SAFELY OPERATING A SWITCH ASSEMBLY - A switch assembly has a switch; and a servo drive system for the switch. The servo drive system includes: a motor configured to drive the switch; a power section configured to supply power to the motor; and a control unit configured to control the power section depending on at least one desired value. The control unit is configured to identify the presence of at least one safety-relevant event and, in the case of the safety-relevant event, to transmit at least one control signal to the power section. The power section is configured to initiate or carry out at least one safety measure depending on the control signal. | 2022-07-07 |
20220216014 | SWITCH ASSEMBLY WITH DRIVE SYSTEM AND METHOD FOR DRIVING A SWITCH - A switch assembly includes a switch; and a drive system for the switch. The drive system includes: a drive shaft connecting the drive system to the switch; a motor configured to drive the drive shaft; and a feedback system, which is configured to determine at least two values for a position of the drive shaft; and to generate a feedback signal on the basis of the at least two values; and a control device which is configured to influence an operation of the motor depending on the feedback signal. | 2022-07-07 |
20220216015 | SWITCH ASSEMBLY WITH DRIVE SYSTEM - A switch assembly includes a switch and a servo drive system. The drive system includes: a drive shaft connecting the drive system to the switch; a motor driving the switch; a power section supplying power to the motor; a feedback system; and a programmable safety controller. The feedback system determines at least two values for an absolute position of the drive shaft; and generates a feedback signal on the basis of the values. The controller controls the power section depending on at least one desired value; influences an operation of the motor depending on the feedback signal; and identifies the presence of at least one safety-relevant event, and based thereon, transmits a control signal to the power section. The power section is initiates/carries-out at a safety measure depending on the control signal. | 2022-07-07 |
20220216016 | SWITCHING APPARATUS FOR ELECTRIC SYSTEMS - A switching apparatus includes one or more electric pole units, each electric pole unit comprising a fixed contact, a movable contact, a first pole terminal, a second pole terminal, and a motion transmission arrangement to reversibly move the movable contact. The motion transmission arrangement includes a conductive motion transmission member coupled to the movable contact. The first pole terminal is in electrical connection to the fixed contact while the second pole terminal includes a first coupling region in electrical connection with a second coupling region of the conductive motion transmission member. Each electric pole unit further includes a shielding element formed by a conductive hollow body and arranged in a relative fixed position with respect to the second pole terminal and the motion transmission member. The shielding element is arranged to at least partially surround the first coupling and the second coupling region. | 2022-07-07 |
20220216017 | SMART SPEAKER WITH SENSING THROUGH THE SPEAKER GRILLE - A smart speaker is disclosed with an interactive speaker grille. In one embodiment a smart speaker comprises a housing with a speaker grille comprising a plurality of openings. Circuitry coupled to the speaker grille is configured to sense direct user interaction with one or more of a plurality of regions of the speaker grille and to generate corresponding electrical signals indicative of the one or more regions of the speaker grille experiencing direct user interaction. The circuitry can include portions in the path of sound transmission to detect user interaction with regions of the grille and portions outside the path of sound transmission for controlling aspects of the smart speaker (e.g. speaker volume, radio station or media stream selection) based on the particular regions touched. | 2022-07-07 |
20220216018 | ILLUMINATED KEYSWITCH STRUCTURE - An illuminated keyswitch structure includes a base plate, a drive circuit board under the base plate, a spacer between the drive circuit board and the base plate, and a light-emitting part on the circuit board. The spacer has a through hole communicating with an opening of the base plate in a vertical direction. The sidewall of the through hole is opaque. The light-emitting part is located in the through hole, and falls within a projection of the opening in the vertical direction. The light-emitting part has a top surface that is lower than or equal to a bottom surface of the base plate in the vertical direction. The structure of the illuminated keyswitch structure around the light-emitting part can keep flat by the spacer. The spacer can prevent the light-emitting part from structurally entering the opening, avoiding structural interference between the light-emitting part and other components above the base plate. | 2022-07-07 |
20220216019 | ROTARY SWITCH ASSEMBLY, IN PARTICULAR OF A STEERING WHEEL COLUMN INTEGRATED MODULE OF AN AUTOMOTIVE VEHICLE - A control ring ( | 2022-07-07 |
20220216020 | ELECTRONIC DEVICE AND NOB MODULE THEREOF - An electronic device and a knob module thereof are provided. The knob module includes a circuit board, a rotary encoder, a light guide structure, a plurality of light emitting units, and a rotation cover. The rotary encoder is disposed on the circuit board. The light guide structure is disposed on the circuit board. The light guide structure includes a light guide ring and an annular light guide wall. The light guide ring surrounds the rotary encoder. The annular light guide wall extends downward from the light guide ring to abut against the circuit board. The plurality of light emitting units is disposed on the circuit board and located between the annular light guide wall and the rotary encoder for emitting light toward the annular light guide wall. The rotation cover is disposed on the rotary encoder. | 2022-07-07 |
20220216021 | CIRCUIT BREAKER - A circuit breaker for connecting at least two line sections in an interruptible manner has at least one pair of vacuum tubes, each with a stationary switching contact and a movable switching contact. The switching contacts of the vacuum tubes are electrically connected in series. The movable switching contacts of the vacuum tubes are coupled to a common actuator and can be simultaneously switched by a movement of the actuator. | 2022-07-07 |
20220216022 | SWITCHGEAR WITH OVERMOLDED DIELECTRIC MATERIAL - A switchgear apparatus configured for operation at voltages up to 72.5 kV includes a vacuum interrupter assembly including a vacuum bottle having an upper portion and a lower potion, a sleeve surrounding the vacuum bottle, a dielectric material surrounding the sleeve, a first terminal electrically coupled to the upper portion of the vacuum interrupter assembly, and an interchange coupled to a lower portion of the vacuum interrupter assembly. The dielectric material is molded around the sleeve and around at least a portion of the first terminal or the interchange. In some embodiments, the sleeve is molded around the vacuum bottle. In other embodiments, the sleeve may be otherwise positioned (i.e., by sliding a pre-formed sleeve) around the vacuum bottle. | 2022-07-07 |
20220216023 | DIRECT CURRENT CONTACTOR AND VEHICLE - This application provides a direct current contactor which includes a housing, and a first fixed contact and a second fixed contact that are fastened into the housing; a first moving contact and a second moving contact that are located in the housing; a drive mechanism, including: an insulation rod connected to the first moving contact and the second moving contact, and a drive component that drives the insulation rod to drive the first moving contact and the second moving contact to synchronously move toward the first fixed contact and the second fixed contact; and a pressing component configured to push the moving contact firmly against the fixed contact. Only two pairs of contacts are used to implement connection/disconnection of two electrode lines, so that a total contactor resistance is reduced by half compared with that in the conventional technology. | 2022-07-07 |
20220216024 | CIRCUIT BREAKER SYSTEM - A circuit breaker system includes a first circuit breaker and a second circuit breaker. The first circuit breaker has a first trip unit, a first control unit, and a first electrical sensor. The first control unit is configured to control the first trip unit. The second circuit breaker has a second trip unit, a second control unit, and a second electrical sensor. The second control unit is configured to control the second trip unit. The first control unit is in communication with the second control unit. The first control unit is configured to monitor the communication with the second control unit to determine whether there is an internal device failure in the second circuit breaker. The first control unit is configured to change the first control unit's standard tripping characteristics to emergency tripping characteristics based on detecting the internal device failure of the second circuit breaker. | 2022-07-07 |
20220216025 | MELTING CONDUCTOR AND FUSE - The invention relates to a melting conductor ( | 2022-07-07 |
20220216026 | ELECTRON EMISSION DEVICE AND ELECTRON MICROSCOPE - An electron emission device having a narrow electron energy range and excellent electron emitting efficiency, and an electron microscope using the electron emission device. An electron emission device having a laminated structure in which a first electrode, an electron accelerating layer made of an insulating film, and a second electrode are laminated in this order, in which the second electrode through which electrons transmit and from whose surface electrons emit, and the energy width of the emitted electrons is 100 meV or more and 600 meV or less. For example, graphene having one or more layers and 20 layers or less can be used as the second electrode, and hexagonal boron nitride can be used as the insulating film. | 2022-07-07 |
20220216027 | CHARGED PARTICLE BEAM SOURCE, SURFACE PROCESSING APPARATUS AND SURFACE PROCESSING METHOD - A charged particle beam source for a surface processing apparatus is disclosed. The charged particle beam source comprises: a plasma chamber; a plasma generation unit adapted to convert an input gas within the plasma chamber into a plasma containing charged particles; and a grid assembly adjacent an opening of the plasma chamber. The grid assembly comprises one or more grids each having a plurality of apertures therethrough, the one or more grids being electrically biased in use so as to accelerate charged particles from the plasma through the grid(s) to thereby output a charged particle beam, the major axis of which is substantially perpendicular to the plane of the grid assembly. The transmissivity of the or each grid to the charged particles is defined by the relative proportion of aperture area to non-aperture area, and at least one of the grids has a transmissivity which varies across the grid along a first direction, the transmissivity being lower adjacent a first extremity of the grid than adjacent a second extremity of the grid opposite the first extremity, the first direction lying parallel to the plane of the grid assembly, such that in use the charged particle beam output by the source has a non-uniform charged particle current density profile in a plane parallel to the plane of the grid assembly which varies along the first direction, the charged particle current density being lower adjacent a first edge of the beam than adjacent a second edge of the beam opposite the first edge. | 2022-07-07 |
20220216028 | CATHODOLUMINESCENCE ELECTRON MICROSCOPE - A scanning electron microscope having an electron column positioned to direct an electron beam onto a sample the electron column having a vacuum enclosure; an electron source; and an electromagnetic objective lens positioned within the vacuum enclosure, the electromagnetic objective lens including a housing having an entry aperture at top surface thereof and an exit aperture at bottom thereof; an electromagnetic coil radially positioned within the housing; a light objective positioned within the housing and comprising a concave minor having a first axial aperture and a convex minor having a second axial aperture; an electron beam deflector positioned within the housing and comprising a first set of deflectors and a second set of deflectors positioned below the first set of deflectors, wherein the second set of deflectors is positioned below the first axial aperture and the first set of deflectors is positioned | 2022-07-07 |
20220216029 | MULTI-BEAM INSPECTION APPARATUS - A multi-beam inspection apparatus including an improved source conversion unit is disclosed. The improved source conversion unit may comprise a micro-structure deflector array including a plurality of multipole structures. The micro-deflector deflector array may comprise a first multipole structure having a first radial shift from a central axis of the array and a second multipole structure having a second radial shift from the central axis of the array. The first radial shift is larger than the second radial shift, and the first multipole structure comprises a greater number of pole electrodes than the second multipole structure to reduce deflection aberrations when the plurality of multipole structures deflects a plurality of charged particle beams. | 2022-07-07 |
20220216030 | Sample Loading Method and Charged Particle Beam Apparatus - Provided is a sample loading method of loading a cooled sample into a sample exchange chamber of a charged particle beam apparatus includes: attaching the sample container in which a sample and liquid nitrogen are accommodated to the sample exchange chamber via a gate valve; evacuating a space between a liquid surface of the liquid nitrogen and the gate valve in a state in which the gate valve is closed; discharging the liquid nitrogen in the sample container after the space between the liquid surface of the liquid nitrogen and the gate valve has been evacuated; evacuating a space in the sample container after the liquid nitrogen in the sample container has been discharged; and opening the gate valve after the space in the sample container has been evacuated. | 2022-07-07 |
20220216031 | SAMPLE PROTECTION DEVICE FOR SCANNING ELECTRON MICROSCOPY - A sample protection device for a scanning electron microscope, the sample protection device comprising: a shell; an accommodating part having an accommodating space for accommodating a sample, the accommodating part being arranged in the shell in such a manner that the accommodating part can move relative to the shell, such that the accommodating part at least partially enters the shell or moves out of the shell; a sealing part connected to the accommodating part and configured to seal between the accommodating part and the shell when the accommodating part is at least partially accommodated in the shell; and a driving member configured to drive relative movement of the shell relative to the accommodating part. | 2022-07-07 |
20220216032 | CHARGED PARTICLE BEAM DEVICE - An object of the invention is to provide a charged particle beam apparatus capable of acquiring an observation image having a high contrast in a sample whose light absorption characteristic depends on a light wavelength. The charged particle beam apparatus according to the invention irradiates the sample with light, generates an observation image of the sample, changes an irradiation intensity per unit time of the light, and then generates a plurality of the observation images having different contrasts (see FIG. | 2022-07-07 |
20220216033 | Charged Particle Beam Apparatus - A charged particle beam apparatus includes a tilt mechanism that tilts a specimen, a detector that detects an electromagnetic wave emitted from the specimen, a table storage unit that stores a table in which tilt angle information on a tilt angle of the specimen and detection solid-angle information on the detection solid angle of the detector are associated with each other, a tilt control unit that controls the tilt mechanism, and a detection-solid-angle information acquisition unit that acquires the tilt angle information from the tilt control unit and acquires the detection solid-angle information with reference to the table. | 2022-07-07 |
20220216034 | CHARGED PARTICLE BEAM APPARATUS AND METHOD OF CONTROLLING CHARGED PARTICLE BEAM APPARATUS - A charged particle beam apparatus includes: a movement mechanism; a particle source; an optical element; a detector; and a control mechanism, in which the control mechanism acquires a diffraction pattern including a plurality of Kikuchi lines, calculates a crystal zone axis of the sample by performing analysis based on a plurality of intersections at which two Kikuchi lines included in the diffraction pattern intersect with each other, calculates an inclination angle of the sample based on the crystal zone axis and an irradiation direction of the charged particle beam, and controls the moving mechanism based on the inclination angle. | 2022-07-07 |
20220216035 | VACUUM PROCESSING APPARATUS AND MAINTENANCE APPARATUS - A maintenance apparatus includes a case and a maintenance mechanism. The case includes an opening having a size corresponding to a second gate of a vacuum processing apparatus including a processing chamber having a first gate through which a substrate is loaded and unloaded and the second gate different from the first gate. The case is attachable to the second gate while maintaining airtightness. The maintenance mechanism is provided in the case and is configured to perform at least one of an operation of detaching a consumed part in the processing chamber through the opening, an operation of attaching a replacement part in the processing chamber and an operation of cleaning the processing chamber. | 2022-07-07 |
20220216036 | CONTROL METHOD AND PLASMA PROCESSING APPARATUS - A control method of a plasma processing apparatus including a first electrode that places a workpiece thereon includes supplying a bias power to the first electrode, and supplying a source power having a frequency higher than that of the bias power into a plasma processing space. The source power has a first state and a second state. The control method further includes a first control process of alternately applying the first state and the second state of the source power in synchronization with a signal synchronized with a cycle of a radio frequency of the bias power, or a phase within one cycle of a reference electrical state that represents any one of a voltage, current, and electromagnetic field measured in a power feeding system of the bias power. | 2022-07-07 |
20220216037 | HIGH SELECTIVITY, LOW STRESS, AND LOW HYDROGEN DIAMOND-LIKE CARBON HARDMASKS BY HIGH POWER PULSED LOW FREQUENCY RF - Provided herein are methods and related apparatus for depositing an ashable hard mask (AHM) on a substrate by pulsing a low frequency radio frequency component at a high power. Pulsing low frequency power may be used to increase the selectivity or reduce the stress of an AHM. The AHM may then be used to etch features into underlying layers of the substrate. | 2022-07-07 |
20220216038 | SYSTEMS AND METHODS FOR MULTI-LEVEL PULSING IN RF PLASMA TOOLS - Systems and methods for multi-level pulsing are described. The systems and methods include generating four or more states. During each of the four or more states, a radio frequency (RF) generator generates an RF signal. The RF signal has four or more power levels, and each of the four or more power levels corresponds to the four or more states. The multi-level pulsing facilitates a finer control in processing a substrate. | 2022-07-07 |
20220216039 | WAFER PROCESSING APPARATUS - A wafer processing apparatus includes a chamber body including a cavity region and a process region; a microwave waveguide configured to introduce a microwave into the cavity region; a first microwave window between the cavity region and the process region; and a magnetic field supplying device configured to apply a magnetic field inside the chamber body, wherein a thickness of the first microwave window is constant, and the first microwave window is configured to control a beam cross-section of the microwave in the process region. | 2022-07-07 |
20220216040 | METHOD AND APPARATUS FOR REDUCING VACUUM LOSS IN AN ION IMPLANTATION SYSTEM - A method and apparatus for dosage measurement and monitoring in an ion implantation system is disclosed. In one embodiment, a transferring system, includes: a vacuum chamber, wherein the vacuum chamber is coupled to a processing chamber; a shaft coupled to a ball screw, wherein the ball screw and the shaft are configured in the vacuum chamber; and a vacuum rotary feedthrough, wherein the vacuum rotary feedthrough comprises a magnetic fluid seal so as to provide a high vacuum sealing, and wherein the vacuum rotary feedthrough is configured through a first end of the vacuum chamber and coupled to the ball screw so as to provide a rotary motion on the ball screw. | 2022-07-07 |
20220216041 | HIGH EFFICIENCY ROTATABLE SPUTTER TARGET - A rotatable sputtering target is provided for use in a sputtering system having a plurality of hollow sleeves of sputtering material arranged on a hollow e backing tube so as to form an annular space that is occupied by a bonding agent and a thermally conductive element which is a woven metal mesh. | 2022-07-07 |
20220216042 | MASS SPECTROMETER AND MASS SPECTROMETRY METHOD - A mass spectrometer includes an ionization unit, a mass separation unit, a detection unit, a first measurement control unit configured to control the ionization unit to repeatedly execute a first measurement on a target sample while changing values of a plurality of parameters defined as device parameters, a second measurement control unit configured to control the ionization unit to set a value of each of the plurality of parameters to a predetermined reference value and execute a second measurement on the target sample at two or more time points before, after, or in a middle of repetition of the first measurement, a correction processing unit configured to correct results of the first measurements using results of the second measurements, and a device parameter-related information acquisition unit configured to determine the plurality of parameters using the corrected measurement results or acquire reference information for determining the plurality of parameters. | 2022-07-07 |
20220216043 | ION GUIDE WITH REDUCED NODING EFFECT - An ion optical arrangement ( | 2022-07-07 |
20220216044 | SWITCHABLE ION GUIDE - An ion optical arrangement ( | 2022-07-07 |
20220216045 | ION GUIDE - An ion guide or ion trap that comprises a plurality of electrodes ( | 2022-07-07 |
20220216046 | ION FOCUSING - The invention generally relates to apparatuses for focusing ions at or above ambient pressure and methods of use thereof. In certain embodiments, the invention provides an apparatus for focusing ions that includes an electrode having a cavity, at least one inlet within the electrode configured to operatively couple with an ionization source, such that discharge generated by the ionization source is injected into the cavity of the electrode, and an outlet. The cavity in the electrode is shaped such that upon application of voltage to the electrode, ions within the cavity are focused and directed to the outlet, which is positioned such that a proximal end of the outlet receives the focused ions and a distal end of the outlet is open to ambient pressure. | 2022-07-07 |
20220216047 | IDENTIFICATION OF SAMPLE SUBSPECIES BASED ON PARTICLE MASS AND CHARGE OVER A RANGE OF SAMPLE TEMPERATURES - A method for analyzing charged particles may include generating, in or into an ion source region, charged particles from a sample of particles, causing the charged particles to enter a mass spectrometer from the ion source region at each of a plurality of differing physical and/or chemical conditions in a range of physical and/or chemical conditions in which the sample particles undergo structural changes, controlling the mass spectrometer to measure at least the charge magnitudes of the generated charged particles at each of the plurality of differing physical and/or chemical conditions, determining, with a processor, an average charge magnitude of the generated charged particles at each of the plurality of differing physical and/or chemical conditions based on the measured charge magnitudes, and determining, with the processor, an average charge magnitude profile over the range of physical and/or chemical conditions based on the determined average charge magnitudes. | 2022-07-07 |
20220216048 | DOPED SILICON NITRIDE FOR 3D NAND - Exemplary methods of forming semiconductor structures may include forming a silicon oxide layer from a silicon-containing precursor and an oxygen-containing precursor. The methods may include forming a silicon nitride layer from a silicon-containing precursor, a nitrogen-containing precursor, and an oxygen-containing precursor. The silicon nitride layer may be characterized by an oxygen concentration greater than or about 5 at. %. The methods may also include repeating the forming a silicon oxide layer and the forming a silicon nitride layer to produce a stack of alternating layers of silicon oxide and silicon nitride. | 2022-07-07 |
20220216049 | METHOD FOR FORMING SEMICONDUCTOR STRUCTURE - A method for forming a semiconductor structure is provided. In one form, a method includes: providing a to-be-processed base structure, where the to-be-processed base structure includes a base layer and pattern structures protruding from the base layer, and a surface of the base structure has adsorption groups; performing plasma treatment on the surface of the base structure by using a reaction gas, where the reaction gas chemically reacts with the adsorption group to cause quantities of precursor adsorption nucleation points on the surface of the base structure to tend to be same; and after the plasma treatment, forming, by using an atomic layer deposition (ALD) process, a target layer conformally covering the surface of the base structure. The plasma treatment is performed on the surface of the base structure, so that the quantities of the precursor adsorption nucleation on top surfaces and sidewalls of the pattern structures and on the surface of the base layer are the same, achieving the modification to the surface of the base structure. Therefore, the thickness uniformity of the target layer is improved, thereby enhancing the performance of a semiconductor. | 2022-07-07 |
20220216050 | ATOMIC LAYER ETCH AND SELECTIVE DEPOSITION PROCESS FOR EXTREME ULTRAVIOLET LITHOGRAPHY RESIST IMPROVEMENT - Provided herein are methods and systems for reducing roughness of an EUV resist and improving etched features. The methods involve descumming an EUV resist, filling divots of the EUV resist, and protecting EUV resists with a cap. The resulting EUV resist has smoother features and increased selectivity to an underlying layer, which improves the quality of etched features. Following etching of the underlying layer, the cap may be removed. | 2022-07-07 |
20220216051 | SEMICONDUCTOR WAFER, MANUFACTURING METHOD FOR SEMICONDUCTOR WAFER, AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE - A semiconductor wafer according to an embodiment includes a support region facing a support member, an outer circumferential region positioned on an outer side of the support region, and an inner circumferential region positioned on an inner side of the support region. The outer circumferential region has a convex portion with a thickness protruded upward with respect to the inner circumferential region or a concave portion with a thickness recessed downward with respect to the inner circumferential region. | 2022-07-07 |
20220216052 | Integrate Rinse Module in Hybrid Bonding Platform - A method includes performing a plasma activation on a surface of a first package component, removing oxide regions from surfaces of metal pads of the first package component, and performing a pre-bonding to bond the first package component to a second package component. | 2022-07-07 |
20220216053 | SEMICONDUCTOR-ON-INSULATOR (SOI) SUBSTRATE AND METHOD FOR FORMING - Various embodiments of the present application are directed towards a semiconductor-on-insulator (SOI) substrate. The SOI substrate includes a handle substrate; a device layer overlying the handle substrate; and an insulator layer separating the handle substrate from the device layer. The insulator layer meets the device layer at a first interface and meets the handle substrate at a second interface. The insulator layer comprises a getter material having a getter concentration profile. The handle substrate contains getter material and has a handle getter concentration profile. The handle getter concentration profile has a peak at the second interface and a gradual decline beneath the second interface until reaching a handle getter concentration. | 2022-07-07 |
20220216054 | METHOD FOR PREPARING SEMICONDUCTOR DEVICE STRUCTURE WITH FINE BORON NITRIDE SPACER PATTERNS - The present disclosure provides a method for preparing a semiconductor device structure with fine boron nitride spacer patterns. The method includes undercutting a photoresist pattern over a semiconductor substrate, and forming an inner spacer element over a sidewall surface of the photoresist pattern. The inner spacer element has a portion extending into a recess (i.e., the undercut region) of the photoresist pattern to form a footing, and a width of the portion of the inner spacer element increases continuously as the portion extends toward the semiconductor substrate. As a result, the inner spacer element may be prevented from collapsing after removal of the photoresist pattern. | 2022-07-07 |
20220216055 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type which is disposed on the lower surface side of the semiconductor substrate and contains a hydrogen donor, and in which a doping concentration distribution in a depth direction of the semiconductor substrate has a single first doping concentration peak; a high-concentration region of a first conductivity type which is disposed between the buffer region and the upper surface of the semiconductor substrate, contains a hydrogen donor, and has a donor concentration higher than a bulk donor concentration; and a lower surface region of a first conductivity type or a second conductivity type which is disposed between the buffer region and a lower surface of the semiconductor substrate, and has a doping concentration higher than the high-concentration region. | 2022-07-07 |
20220216056 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE - Provided is a semiconductor device including: a semiconductor substrate having an upper surface and a lower surface, and containing a bulk donor; a buffer region of a first conductivity type; a high-concentration region of a first conductivity type; and a lower surface region of a first conductivity type or a second conductivity type, wherein a shallowest doping concentration peak closest to the lower surface of the semiconductor substrate among the doping concentration peaks of the buffer region is a concentration peak of a hydrogen donor having a concentration higher than the other doping concentration peaks, and a ratio A/B of a peak concentration A of the shallowest doping concentration peak and an average peak concentration B of the other doping concentration peaks is 200 or less. | 2022-07-07 |
20220216057 | MOLECULAR DOPING - Method of doping a semiconductor sample in a uniform and carbon-free way, wherein said sample has a surface, comprising the following steps: A. removing oxides from at least part of the said surface; B. dip coating said at least part of the surface of the sample in a dopant based carbon-free solution of at least one dopant based carbon free substance diluted in water, wherein said at least one dopant based carbon free substance has a molecule comprising at least one dopant atom, wherein the dip coating is achieved by heating said dopant based carbon-free solution at a dip coating temperature from 65% to 100% of the boiling temperature of said dopant based carbon-free solution, thereby a self-assembled mono-layer including dopant atoms is formed; C. annealing said sample, wherein the annealing is configured to cause said dopant atoms included in said self-assembled mono-layer to be diffused into the sample. | 2022-07-07 |
20220216058 | LOW TEMPERATURE GRAPHENE GROWTH - Exemplary methods of semiconductor processing may include delivering a carbon-containing precursor and a hydrogen-containing precursor to a processing region of a semiconductor processing chamber. The methods may include generating a plasma of the carbon-containing precursor and the hydrogen-containing precursor within the processing region of the semiconductor processing chamber. The methods may include forming a layer of graphene on a substrate positioned within the processing region of the semiconductor processing chamber. The substrate may be maintained at a temperature below or about 600° C. The methods may include halting flow of the carbon-containing precursor while maintaining the plasma with the hydrogen-containing precursor. | 2022-07-07 |
20220216059 | METHOD OF TREATING A SUBSTRATE - Methods and related systems for lithographically defining patterns on a substrate are disclosed. An exemplary method includes forming a structure. The method includes providing a substrate to a reaction chamber. The substrate comprises a semiconductor and a surface layer. The surface layer comprises amorphous carbon. The method further comprises forming a barrier layer on the surface layer and depositing a metal-containing layer on the substrate. The metal- containing layer comprises oxygen and a metal. | 2022-07-07 |
20220216060 | CONFORMAL AND SMOOTH TITANIUM NITRIDE LAYERS AND METHODS OF FORMING THE SAME - The disclosed technology generally relates to forming a thin film comprising titanium nitride (TiN), and more particularly to forming by a cyclical vapor deposition process the thin film comprising (TiN). In one aspect, a method of forming a thin film comprising titanium nitride (TiN) by a cyclical vapor deposition process comprises forming on a semiconductor substrate a TiN thin film by exposing the semiconductor substrate to one or more cyclical vapor deposition cycles each comprising an exposure to a Ti precursor at a Ti precursor flow rate and an exposure to a NH | 2022-07-07 |
20220216061 | SUBSTRATE PROCESSING METHOD, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM AND SUBSTRATE PROCESSING APPARATUS - There is provided a technique capable of forming a sufficiently flat film. According to one aspect of the technique, there is provided a substrate processing method including: forming a metal-containing multi-layer film structure on a substrate by alternately performing: (a) forming a metal-containing film on the substrate; and (b) supplying a process gas to the substrate so as to perform one or both of (b- | 2022-07-07 |
20220216062 | ETCHING METHOD FOR SILICON NITRIDE AND PRODUCTION METHOD FOR SEMICONDUCTOR ELEMENT - There is provided an etching method for silicon nitride that enables selective etching of silicon nitride without using plasma. The etching method for silicon nitride includes placing etching object ( | 2022-07-07 |
20220216063 | ETCHING METHOD AND METHOD FOR MANUFACTURING SEMICONDUCTOR ELEMENT - Provided is an etching method capable of selectively etching an etching target containing a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom with respect to a specific non-etching target without using plasma. The etching method includes an etching step in which an etching gas containing fluorine gas is brought into contact with a member to be etched including an etching target and a non-etching target in the absence of plasma to selectively etch the etching target with respect to the non-etching target. The etching target contains a silicon compound including at least one of a nitrogen atom or an oxygen atom and a silicon atom. The non-etching target includes at least one selected from tantalum, cobalt, copper, titanium nitride, nickel, and amorphous carbon. The etching step is performed under temperature conditions of from 40° C. to less than 350° C. | 2022-07-07 |
20220216064 | PLASMA-ASSISTED ETCHING OF METAL OXIDES - The present disclosure describes methods and systems for plasma-assisted etching of a metal oxide. The method includes modifying a surface of the metal oxide with a first gas, removing a top portion of the metal oxide by a ligand exchange reaction, and cleaning the surface of the metal oxide with a second gas. | 2022-07-07 |
20220216065 | TWO-STAGE BAKE PHOTORESIST WITH RELEASABLE QUENCHER - Two-stage bake photoresists with releasable quenchers for fabricating back end of line (BEOL) interconnects are described. In an example, a photolyzable composition includes an acid-deprotectable photoresist material having substantial transparency at a wavelength, a photo-acid-generating (PAG) component having substantial transparency at the wavelength, and a base-generating component having substantial absorptivity at the wavelength. | 2022-07-07 |
20220216066 | ETCHANT FOR ETCHING A COBALT-CONTAINING MEMBER IN A SEMICONDUCTOR STRUCTURE AND METHOD OF ETCHING A COBALT-CONTAINING MEMBER IN A SEMICONDUCTOR STRUCTURE - A method of etching a cobalt-containing member in a semiconductor structure includes providing an etchant including a fluorine-free acid and an alkaline solution having a pH value between 8.5 and 13, and etching the cobalt-containing member in the semiconductor structure using the etchant, wherein a rate of etching the cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant. An etchant for etching a cobalt-containing member in a semiconductor structure includes a fluorine-free acid, and an alkaline solution having a pH value between 8.5 and 13; wherein a rate of etching a cobalt-containing member by the etchant is substantially greater than a rate of etching a nitride-containing member by the etchant, and a level of dissolved oxygen of the etchant is substantially less than or equal to 100 ppb. | 2022-07-07 |
20220216067 | METHOD FOR MANUFACTURING SEMICONDUCTOR STRUCTURE AND SEMICONDUCTOR STRUCTURE - A method for manufacturing a semiconductor structure and a semiconductor structure are provided. The method for manufacturing a semiconductor structure includes: forming a conductive layer, a protective layer, and a mask layer in sequence on the substrate, the mask layer including a first pattern facing the first region and a second pattern facing the second region; forming a restriction pattern located in the second region by etching the protective layer using the mask layer as a mask; and forming contact pads located in the first region and connecting wires located in the second region on the conductive layer by etching the conductive layer using the mask layer as a mask. | 2022-07-07 |
20220216068 | METHOD FOR FABRICATING SEMICONDUCTOR PACKAGE - A method for fabricating a semiconductor package, the method including: forming a. release layer on a first carrier substrate, wherein the release layer includes a first portion and a second portion, wherein the first portion has a first thickness, and the second portion has a second thickness thicker than the first thickness; forming a barrier layer on the release layer; forming a redistribution layer on the barrier layer, wherein the redistribution layer includes wirings and an insulating layer; mounting a semiconductor chip on the redistribution layer; forming a molding layer on the redistribution layer to at least partially surround the semiconductor chip; attaching a second carrier substrate onto the molding layer; removing the first carrier substrate and the release layer; removing the barrier layer; and attaching a solder ball onto the redistribution layer exposed by removal of the barrier layer and the second portion of the release layer. | 2022-07-07 |
20220216069 | A METHOD FOR MANUFACTURING AN ELECTRONIC POWER MODULE - A method for manufacturing a power electronic module by additive manufacturing includes the step of depositing a layer of an electrically conductive nanoporous material on a substrate that includes an electrically insulating layer and at least one layer of conductive metal material, called a metallized substrate. The method further includes the step of placing an element for example an active component of the semiconductor power component type, on the layer of nanoporous material and sintering the layer of nanoporous material, so as to ensure a mechanical and electrical connection between said element and the metallized substrate. | 2022-07-07 |
20220216070 | 3D SEMICONDUCTOR DEVICE AND STRUCTURE WITH BONDING - A 3D semiconductor device a first level, where the first level includes a first layer which includes first transistors, where the first level includes a second layer, the second layer including first interconnections; a second level overlaying the first level, where the second level includes a third layer which includes second transistors, and where the second level includes a fourth layer, the fourth layer including second interconnections and a plurality of connection paths, where the plurality of connection paths provides connections from a plurality of the first transistors to a plurality of the second transistors, where the second level is bonded to the first level, where the bonded includes oxide to oxide bond regions, where the bonded includes metal to metal bond regions, where the second level includes at least one first ElectroStatic Discharge (ESD) circuit, and where the first level includes at least one second ESD circuit. | 2022-07-07 |
20220216071 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE - A method includes forming regions of solder paste on a redistribution structure, wherein the solder paste has a first melting temperature; forming solder bumps on an interconnect structure, wherein the solder bumps have a second melting temperature that is greater than the first melting temperature; placing the solder bumps on the regions of solder paste; performing a first reflow process at a first reflow temperature for a first duration of time, wherein the first reflow temperature is less than the second melting temperature; and after performing the first reflow process, performing a second reflow process at a second reflow temperature for a second duration of time, wherein the second reflow temperature is greater than the second melting temperature. | 2022-07-07 |
20220216072 | PROCESSING LIQUID SUPPLY APPARATUS AND METHOD OF REMOVING SOLIDS FROM PROCESSING LIQUID SUPPLY APPARATUS - Proposed herein are a processing liquid supply apparatus and a method of removing solids from the processing liquid supply apparatus. The proposed processing liquid supply apparatus has a flushing function for removing solids such as silica which are precipitated as a result of supplying a processing liquid from the processing liquid supply apparatus to a substrate processing apparatus. The processing liquid supply apparatus supplies the processing liquid to a substrate processing apparatus and then recovers and regenerates the processing liquid. The proposed method provides a method of removing solids such as solid silica from the processing liquid supply apparatus. | 2022-07-07 |
20220216073 | PROCESSING MODULE AND PROCESSING METHOD - A processing module includes: a processing container including therein processing spaces in which stages are disposed, respectively, wherein a center of each of the processing spaces is located on a same circumference; a rotation arm including holders configured to hold wafers, which are placed on the stages of the processing spaces, respectively, wherein the rotation arm is rotatable around a center of the circumference as a rotation axis; and a sensor located between adjacent processing spaces and configured to detect positions of the wafers held by the rotation arm during rotational operation of the rotation arm. | 2022-07-07 |