27th week of 2011 patent applcation highlights part 12 |
Patent application number | Title | Published |
20110163224 | ADJUSTABLE CMOS SENSOR ARRAY - A column buffer for use with a pixel cell array includes an amplifier coupled to three read-out circuits in parallel providing a signal corresponding to accumulated photon-generated charge in a pixel cell plus noise, a reset level plus noise, and a pedestal level, respectively. These three signals are used to generate an ultra-low noise signal D | 2011-07-07 |
20110163225 | WAFER LEVEL OPTICAL APPARATUS - A wafer level optical apparatus includes a wafer level lens unit for receiving light. The wafer level lens unit includes a lens substrate having a partial surface with a slope greater than zero and at least one lens adhered to a surface of the lens substrate. | 2011-07-07 |
20110163226 | MEANS AND METHODS FOR ASSESSING LIVER TOXICITY - The present invention pertains to the field of toxicological assessments for risk stratification of chemical compounds. Specifically, it relates to a method for diagnosing liver toxicity. It also relates to a method of determining whether a compound is capable of inducing such liver toxicity in a subject and to a method of identifying a drug for treating liver toxicity. Furthermore, the present invention relates to a data collection comprising characteristic values of at least five metabolites, a data storage medium comprising said data collection, and a system and a device for diagnosing liver toxicity. Finally, the present invention pertains to the use of a group of metabolites or means for the determination thereof for the manufacture of a diagnostic device or composition for diagnosing liver toxicity in a subject. For each sex, a different metabolome pattern, i.e. a different set of analytes is disclosed. The liver toxicity markers are mainly selected from free fatty acids, but also include various phosphatidylcholines, Hydroxyphenylpyruvic acid, alpha-Tocopherol, Cholesterol, myo-Inositol-2-monophosphate, 4-Hydroxysphinganine, Ceramide (d18:1, C24:1), Ceramide (d18:2, C24:0), Sphingomyelin (d18:1, C16:0), 1,2-Dioleoyl-sn-glycero-3-phosphatidyl-L-serine, 18:1 Lyso Phosphatidylcholine, Coenzyme Q9, Glucose, Glycerol, Glycerophosphates, Phosphate, 5-Methoxysphingosine, erythrosphingosine, Threonine, Diacylglycerides and Triacylglycerides. | 2011-07-07 |
20110163227 | Ion Trap for Cooling Ions - A method of changing the kinetic energy of ions is provided, comprising: trapping ions in a trapping region of an ion trap; and directing a beam of gas through the trapping region, so as to change the kinetic energy of the trapped ions thereby. Also provided is a method of separating ions, the method comprising: causing ions to enter a trapping region of an ion trap along a first axis of the trapping region; directing a beam of gas along the first axis and applying an electric potential in the direction of the first axis so as to cause separation of the ions based on their ion mobility. An ion trap and a mass spectrometer for performing the methods are also provided. | 2011-07-07 |
20110163228 | QUANTIFICATION METHOD OF FUNCTIONAL GROUPS OF ORGANIC LAYER - A quantification method of functional groups in an organic thin layer includes: a) measuring an absolute quantity per unit area of an analysis reference material having functional groups included in a reference organic thin layer by means of MEIS spectroscopy; b) carrying out spectrometry for the same reference organic thin layer as in a) and thereby obtaining peak intensities of the functional groups in the reference organic thin layer; c) carrying out the same spectrometry as in b) for an organic thin layer to be analyzed having the same functional groups and thereby measuring peak intensities of the functional groups with unknown quantity; and d) comparing the peak intensities of the functional groups measured in b) with respect to the absolute quantity of the analysis reference material in a) and thereby determining the absolute quantity per unit area of the functional groups with unknown quantity measured in c). | 2011-07-07 |
20110163229 | HIGH THROUGHPUT SEM TOOL - A scanning charged particle beam device ( | 2011-07-07 |
20110163230 | CHARGED PARTICLE BEAM DEVICE - There is provided a substrate inspection device which uses a charged particle beam and is capable of more quickly extracting a defect candidate than ever before. The configuration of the substrate inspection device is such that a substrate having a circuit pattern is irradiated with a primary charged particle beam, the substrate is moved at a constant speed or at an increasing or a decreasing speed, a position resulting from the movement is monitored, the position of irradiation with the primary charged particle beam is controlled according to the coordinates of the substrate, an image in a partial region on the substrate is captured at a speed lower than the velocity of the movement, a defect candidate is detected based on the captured image, and the detected defect candidate is displayed in a map format. | 2011-07-07 |
20110163231 | SECURITY PORTAL - A security portal comprises an array of antenna elements and associated receivers sensitive in a frequency band chosen from within the centimetric to sub-millimetre wavelengths, the antenna array being located on a moveable panel. Radiation with the frequency band from a target person or object is measured at a first and second time within the near field of the antenna array, with the panel at corresponding first and second positions, the movement of the panel therefore allowing a more complete view of the target. The data received may be processed to form image data of the target. The moveable panel may comprise a part of a hinged, sliding or rotating door, or may be concealed behind stationary coverings that are transparent at the frequency band of interest. | 2011-07-07 |
20110163232 | DETECTION CIRCUIT, SENSOR DEVICE, AND ELECTRONIC INSTRUMENT - A detection circuit includes a current mirror circuit, a pyroelectric element, a capacitor element and a charging circuit. The pyroelectric element is disposed between a first power supply node and a first node connected to the current mirror circuit. The capacitor element is disposed between the first power supply node and a second node connected to the current mirror circuit. The charging circuit is connected to the current mirror circuit to charge the pyroelectric element and the capacitor element though the current mirror circuit. | 2011-07-07 |
20110163233 | Optical Proximity Sensor with Improved Dynamic Range and Sensitivity - Various embodiments of an optical proximity sensor and corresponding circuits and methods for measuring small AC signal currents arising from the detection of pulsed AC light signals emitted by a light emitter and reflected from an object to detected in the presence of larger ambient light DC current signals are disclosed. Circuits and corresponding methods are described that improve the dynamic range, sensitivity and detection range of an optical proximity sensor by cancelling the contributions of DC current signals arising from ambient light signals that otherwise would dominate the detected small AC signal currents. The DC signal cancellation occurs in a differential amplifier circuit before small AC signal currents are provided to an analog-to-digital converter The circuits and methods may be implemented using conventional CMOS design and manufacturing techniques and processes. | 2011-07-07 |
20110163234 | APPARATUS AND METHOD FOR INVESTIGATING A SAMPLE - An apparatus for investigating a sample comprising: a source of beam radiation; a detector for detecting a beam of radiation reflected by the sample and an optical subsystem for manipulating the beam between source and detector wherein the optical subsystem comprises a first optical element arranged in use to angularly deflect the source beam within a given solid angle and a second optical element arranged to focus the beam from the first optical element onto a substantially flat image plane and wherein radiation reflected by the sample passes back through the first and second optical elements to the detector. | 2011-07-07 |
20110163235 | SCINTIGRAPHIC DEVICE WITH HIGH SPATIAL RESOLUTION - A scintillation device with high resolution includes a detection unit ( | 2011-07-07 |
20110163236 | Scintillation-Cherenkov Detector and Method for High Energy X-Ray Cargo Container Imaging and Industrial Radiography - An inspection system, and corresponding methods, employing a detector for characterizing high energy penetrating radiation transmitted through an inspected object. The detector produces a detector signal that is due to both scintillation and Cherenkov processes. The scintillation and Cherenkov components of the detector signal are discriminated and processed to obtain separate measures of relative attenuation of higher and lower energy penetrating radiation in a target intervening between a source of penetrating radiation and the detector. In certain embodiments of the invention, scintillation and Cherenkov components of a detector signal are discriminated on the basis of distinct spectral features, or, alternatively, by processing temporal characteristics of the signal of a single photodetector. | 2011-07-07 |
20110163237 | METHOD, APPARATUS AND SYSTEM FOR LOW-ENERGY BETA PARTICLE DETECTION - An apparatus, method, and system relating to radiation detection of low-energy beta particles are disclosed. An embodiment a radiation detector with a first scintillator and a second scintillator operably coupled to each other. The first scintillator and the second scintillator are each structured to generate a light pulse responsive to interaction with beta particles. The first scintillator is structured to experience full energy deposition of low-energy beta particles, and permit a higher-energy beta particle to pass therethrough and interact with the second scintillator. The radiation detector further includes a light-to-electrical converter operably coupled to the second scintillator and configured to convert light pulses generated by the first scintillator and the second scintillator into electrical signals. The first scintillator and the second scintillator have at least one mutually different characteristic to enable an electronic system to determine whether a given light pulse is generated in the first scintillator or the second scintillator. | 2011-07-07 |
20110163238 | NUCLEAR MEDICINE DIAGNOSIS APPARATUS - According to one embodiment, a nuclear medicine diagnosis includes a light signal generating unit, photodetection unit, measurement unit, calculation unit, and storage unit. The light signal generating unit repeatedly generates light signals. The photodetection unit repeatedly generates first output signals corresponding to intensities of the light signals, repeatedly generates second output signals corresponding to intensities of gamma rays emitted from a subject. The measurement unit repeatedly measures light signal detection times and repeatedly measures gamma ray detection times. The calculation unit calculates a difference between a target gamma ray detection time and a target light signal detection time of the light signal detection times for each of the gamma ray detection times. The target light signal detection time is measured before the target gamma ray detection time. The storage unit stores the calculated difference in association with a target second output signal of the second output signals. | 2011-07-07 |
20110163239 | CT Scanning and Contraband Detection - CT scanning of transportation containers is performed by generating X-rays at various points at the opposite sides of the containers, detecting the X-rays passing through the containers, and analyzing the data received to determine the presence of contraband. The X-rays are generated by modulating a magnetic field through which a high-energy electron beam passes to deflect the beam successively to different targets positioned around the sides of the container, while the electron beam source remains stationary. The X-rays are detected by an array of cells using X-ray responsive storage phosphor material to emit light which is sent to analyzing and comparing equipment. The targets and detectors and the cargo container are moved relative to one another to scan a selected volume of the container. | 2011-07-07 |
20110163240 | RADIOGRAPHIC APPARATUS - A radiographic apparatus includes an x-ray detection sensor having a two-dimensional detector plane for detecting an intensity distribution of x-rays, a body internally containing the x-ray detection sensor, a supporting member having a supporting surface for supporting the x-ray detection sensor across the detector plane and which fixes the x-ray detection sensor to an inner bottom surface of the body, and a circuit board on which is mounted a circuit for reading out a detection signal from the x-ray detection sensor. Furthermore, in the radiographic apparatus, the supporting member forms a space between the supporting member and the inner bottom surface of the body in a peripheral portion of the supporting member. At least a part of the circuit board is arranged in the space. | 2011-07-07 |
20110163241 | APPARATUS FOR DETECTING X-RAYS AND METHOD OF OPERATING THE SAME - An apparatus for detecting X-rays and a driving method of the X-ray detecting apparatus. The driving method includes sampling a first data voltage corresponding to a rheobase voltage and a bias voltage, the rheobase voltage being generated by a current from a photodiode, sampling a second data voltage corresponding to the bias voltage after resetting the rheobase voltage, and resetting the rheobase voltage from the time that the sampling of the second data voltage is finished to the time that a corresponding frame is finished. An image delay generated when an X-ray motion picture is displayed may be minimized. | 2011-07-07 |
20110163242 | LAYERED SEMICONDUCTOR NEUTRON DETECTORS - Room temperature operating solid state hand held neutron detectors integrate one or more relatively thin layers of a high neutron interaction cross-section element or materials with semiconductor detectors. The high neutron interaction cross-section element (e.g., Gd, B or Li) or materials comprising at least one high neutron interaction cross-section element can be in the form of unstructured layers or micro- or nano-structured arrays. Such architecture provides high efficiency neutron detector devices by capturing substantially more carriers produced from high energy α-particles or γ-photons generated by neutron interaction. | 2011-07-07 |
20110163243 | PARTICLE BEAM IRRADIATION APPARATUS - There is obtained a particle beam irradiation apparatus which does not use any IF sentence (conditional expression for case classification) and can calculate a control command and enhance irradiation position precision. The particle beam irradiation apparatus is provided with inverse mapping means having an inverse mapping mathematical expression model for generating an command value for the scanning electromagnet from a desired irradiation position coordinate of the charged particle beam in an irradiation subject so that irradiation to the irradiation subject is implemented on the basis of the command value concerned, and the scanning electromagnet is controlled on the basis of the command value generated from the desired irradiation position coordinate of the charged particle beam in the irradiation subject by using the inverse mapping mathematical expression model, thereby irradiating the irradiation subject with the charged particle beam while scanning the charged particle beam. | 2011-07-07 |
20110163244 | MULTIPLE BEAM CHARGED PARTICLE OPTICAL SYSTEM - The invention relates to a multiple be charged particle optical system, comprising an electrostatic lens structure with at least one electrode, provided with apertures, wherein the effective size of a lens field effected by said electrode at a said aperture is made ultimately small. The system may comprise a diverging charged particle beam part, in which the lens structure is included. The physical dimension of the lens is made ultimately small, in particular smaller than one mm, more in particular less than a few tens of microns. En further elaboration, a lens is combined with a current limiting aperture, aligned such relative to a lens of said structure, that a virtual aperture effected by said current limiting aperture in said lens is situated in an optimum position with respect to minimizing aberrations total. | 2011-07-07 |
20110163245 | IRRADIATION SYSTEM AND METHOD - A radiotherapy technique for providing a radiation source having a radiation path that intersects a treatment area, activating the radiation source, and moving the radiation source in three dimensions about the treatment area, wherein the radiation source is continually directed substantially toward an isocentric point within the treatment area. | 2011-07-07 |
20110163246 | LIGHTING SYSTEM FOR PREVENTING PLANT DISEASE DAMAGE - A lighting system for preventing a plant disease damage is provided with an ultraviolet light source which emits ultraviolet ray including UV-B in a wavelength region of 255 to 340 nm, a visible light source which emits visible light, and controllers which control a lighting of the ultraviolet light source and the visible light source. The controller controls the lighting of the ultraviolet light source so that a horizontal irradiance on a canopy surface of a plant is 50 μW/cm | 2011-07-07 |
20110163247 | EXTREME ULTRA VIOLET LIGHT SOURCE APPARATUS - In an extreme ultra violet light source apparatus of a laser produced plasma type, charged particles such as ions emitted from plasma are promptly ejected to the outside of a chamber. The extreme ultra violet light source apparatus includes a chamber in which extreme ultra violet light is generated, a target supply unit for supplying a target material to a predetermined position within the chamber, a driver laser for applying a laser beam to the target material supplied by the target supply unit to generate plasma, a collector mirror for collecting the extreme ultra violet light radiated from the plasma to output the extreme ultra violet light, a magnetic field forming unit for forming an asymmetric magnetic field in a generation position of the plasma by using a coil, and a charged particle collection mechanism provided on at least one of two surfaces of the chamber to which lines of magnetic force generated by the coil extend. | 2011-07-07 |
20110163248 | MULTI-LAYER LIGHT-WEIGHT GARMENT MATERIAL WITH LOW RADIATION BUILDUP PROVIDING SCATTERED-RADIATION SHIELDING - A multi-ply, preferably flexible, x-ray shielding material which can be formed into a garment is provided. Such material is lighter in weight but that provides a specific degree of protection under the standard conditions met in fluoroscopy by workers in the field subjected to reflected, or scattered, radiation emanating from the patient's body. The multi-layered fabric is so constructed that the amount of re-radiated energy, or fluorescence produced by each layer, is greatly attenuated. Generally, this invention is directed to a material formed of two or more layers of a polymeric or elastomeric film or sheet loaded with different radiation-attenuating metal material. | 2011-07-07 |
20110163249 | Fluid Flow Monitor - A fluid flow monitor, typically for water, includes the combination of a fluid conduit including a magnet displaceable within the conduit when fluid flows therethrough, an electric circuit having a power supply, a magnetic sensor switch positioned in the electric circuit located adjacent to the conduit and positioned at a predetermined distance from the magnet when the magnet is not displaced and a timer connected to the electric circuit. When the magnet is displaced the predetermined distance, the magnetic sensor switch closes the electric circuit activating the timer and when the magnet is not displaced to the predetermined distance, the magnetic sensor switch opens the electric circuit deactivating the timer. | 2011-07-07 |
20110163250 | DISK ACTUATOR FOR A PROPANE CARBURETOR - One example embodiment includes a disk actuator. The disk actuator includes a disk and a shaft, where the shaft is connected to the disk such that rotation of the disk causes rotation of the shaft. The disk actuator also includes a plug, where the plug is connected to the shaft such that rotation of the shaft causes rotation of the plug. The plug includes a channel, wherein the channel is configured to regulate the flow of air into a carburetor. | 2011-07-07 |
20110163251 | SLIDE VALVE - A gate valve, comprising a body ( | 2011-07-07 |
20110163252 | COMPOSITION PROTECTIVE AGAINST FIRE AND USE - Composition protective against fire and use comprising: Water: 25-42% by weight; Ultramarine Blue: 0.015-0.025% by weight; Preservative: 0.09-0.15% by weight; Vegetable Binder: 1.6-2.7% by weight; Spanish White: 6-10% by weight; Calcium Carbonate: 33-56% by weight; Sulphate of Lime: 9-15% by weight, having a dual function, acting as a protective substance against fire as well as a fire-combating substance, such that as protective substance against fire, through application or spraying thereof on a surface to be protected, should it be reached by fire, it acts as protective barrier preventing fire from destroying or damaging it, whilst as fire-combating substance, through application or spraying thereof on a surface in flames, the fire is quenched and extinguished. The composition is breathable and absolutely wholly ecological, and consequently does not affect plant varieties, permitting the creation of totally effective firebreak “barriers”. | 2011-07-07 |
20110163253 | PROCESSES FOR PRODUCING 1,2,3,3,3-PENTAFLUOROPROPENE - A process for making CHF═CFCF | 2011-07-07 |
20110163254 | Hydrophilic Organofunctional Silicone Copolymers - Hydrophilic silicone copolymers are the addition polymerization product of an unsaturated silicone macromer, and unsaturated polyoxyalkylene polyether, and optionally further unsaturated addition polymerizable monomers. | 2011-07-07 |
20110163255 | METHOD FOR PROTEIN PURIFICATION UNDER DENATURING CONDITIONS - The invention relates to a method for the preparation of an application buffer for the purification of proteins by means of immobilized metal ion affinity chromatography (IMAC) under denaturing conditions, which is characterized in that a defined amount of a buffer concentrate having a defined pH value is mixed with a defined amount of a urea concentrate, whereby an application buffer having a defined pH value is provided. According to the invention, a corresponding kit is provided in addition. The components are stable in storage and by mixing produce an application buffer having a defined composition and a defined pH value. The need for pH adjustment or a new preparation is eliminated. The invention can thus be used in an automated manner and as a closed kit concept. | 2011-07-07 |
20110163256 | METHOD FOR MANUFACTURING A METAL COMPOSITE COMPONENT, IN PARTICULAR FOR AN ELECTROMAGNETIC VALVE - A method for manufacturing a metal composite component is characterized in that the composite component ( | 2011-07-07 |
20110163257 | ENVIRONMENTALLY BENIGN ANTI-ICING OR DEICING FLUIDS EMPLOYING TRIGLYCERIDE PROCESSING BY-PRODUCTS - Deicing compositions comprised of glycerol-containing by-products of triglyceride processing processes are disclosed. | 2011-07-07 |
20110163258 | MIXTURES OF ALKALI METAL POLYSULFIDES - The present invention relates to mixtures of alkali metal polysulfides and to mixtures of alkali metal polysulfides and alkali metal thiocyanates, to processes for preparation thereof, to the use thereof as heat transfer or heat storage fluids, and to heat transfer or heat storage fluids which comprise the mixtures of alkali metal polysulfides or the mixtures of alkali metal polysulfides and alkali metal thiocyanates. | 2011-07-07 |
20110163259 | HEAT TRANSFER FLUIDS AND HEAT STORAGE FLUIDS FOR EXTREMELY HIGH TEMPERATURES BASED ON POLYSULFIDES - A composition for the transport and storage of heat energy, which comprises alkali metal polysulfides of the formula (Me1 | 2011-07-07 |
20110163260 | GLYCERIN-CONTAINING ANTIFREEZING AGENT CONCENTRATES WITH CORROSION PROTECTION - The present invention relates to antifreeze/anticorrosion concentrates comprising from 10 to 50% by weight, based on the total amount of the concentrate, of glycerol, to processes for preparing such concentrates from superconcentrates, to aqueous coolant compositions from these concentrates, and to their use, for example in internal combustion engines. | 2011-07-07 |
20110163261 | COMPOSITION - A composition for controlling a temperature elevation of an electronic component when soldering the electronic component on a substrate, includes a first resin for providing the composition with adhesion to the electronic component, a curing agent for curing the first resin by heat treatment for soldering, and a second resin for facilitating removal of the composition from the electronic component. | 2011-07-07 |
20110163262 | COLLOIDAL SILICA CONTAINING SILICA SECONDARY PARTICLES HAVING BENT STRUCTURE AND/OR BRANCHED STRUCTURE, AND METHOD FOR PRODUCING SAME - This invention provides a dense, high-purity colloidal silica containing silica secondary particles having a branched and/or bent structure, and a production method thereof. Specifically, this invention provides a method for producing a colloidal silica, comprising the steps of 1) preparing a mother liquid containing an alkali catalyst and water, and having a pH of 9 to 12; and 2) adding a hydrolysis liquid obtained by hydrolysis of an alkyl silicate to the mother liquid, wherein the step of adding the hydrolysis liquid to the mother liquid sequentially comprises A) step 1 of adding the hydrolysis liquid until the pH of the resulting liquid mixture becomes less than 7; B) step 2 of adding an aqueous alkali solution until the pH of the liquid mixture becomes 7 or more; and C) step 3 of adding the hydrolysis liquid while maintaining the pH of the liquid mixture at 7 or more, and a colloidal silica containing silica secondary particles having a branched and/or bent structure, obtained by this method. | 2011-07-07 |
20110163263 | PEARLESCENT COMPOSITION MANUFACTURING METHOD - A method for producing a pearly luster composition containing a fatty acid glycol ester, a surfactant, and water, and further containing as a crystallization additive any one selected from the group consisting of (1) a fatty acid, (2) an aliphatic alcohol, (3) a fatty acid monoglyceride, and (4) an aliphatic ether, the method including the step of cooling a molten mixture solution containing the fatty acid glycol ester, the surfactant, water, and the crystallization additive, wherein a representative heat-removal rate per unit mass during crystallization in the cooling step is from 9 to 36 [W/kg]. The pearly luster composition obtained by the method of the present invention can be suitably used for shampoos, conditioners, body shampoos, liquid detergents, and the like. | 2011-07-07 |
20110163264 | SYNTHESIS OF CARBON NITRIDES FROM CARBON DIOXIDE - Provided are methods of converting carbon dioxide to carbon nitrides. In a first reaction, carbon dioxide may be reacted with metal nitrides, such as Li | 2011-07-07 |
20110163265 | FORMULATION AND METHOD FOR PREPARING GELS COMPRISING HYDROUS ALUMINUM OXIDE - Formulations useful for preparing hydrous aluminum oxide gels contain a metal salt including aluminum, an organic base, and a complexing agent. Methods for preparing gels containing hydrous aluminum oxide include heating a formulation to a temperature sufficient to induce gel formation, where the formulation contains a metal salt including aluminum, an organic base, and a complexing agent. | 2011-07-07 |
20110163266 | Organic Water Retention Mix for Use on Soil - An organic mixture for retaining water in soil includes 30 to 38 kg of cellulose fiber waste or paper sludge, 8 to 13 kg of dry sawdust or wood shavings, 30 to 50 kg of top soil, 4 to 6.5 kg of manure, and 11.45 to 20 kg of calcium carbonate. | 2011-07-07 |
20110163267 | CHIRAL COMPOUNDS AND LIQUID CRYSTAL COMPOSITIONS AND POLYMER NETWORKS DERIVED THEREFROM - The invention relates to compounds of formula (I): | 2011-07-07 |
20110163268 | POLARIZING FILM - The present invention provides a polarizing film containing an azo compound represented by the following formula (1): | 2011-07-07 |
20110163269 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - The subject is to provide a liquid crystal composition that satisfies at least one characteristic of characteristics such as a high maximum temperature of a nematic phase, a low minimum temperature of a nematic phase, a small viscosity, a suitable optical anisotropy, a negatively large dielectric anisotropy, a large specific resistance, a high stability to ultraviolet light and a high stability to heat, or that is suitably balanced regarding two characteristics thereof. The subject is to provide an AM device that has a short response time, a large voltage holding ratio, a large contrast ratio, a long service life and so forth. | 2011-07-07 |
20110163270 | Metal-Containing Dendrimers - This invention relates to a hat emitting device which comprises at least one layer that contains an organometallic dendrimer having a core comprising a metal cation. The invention also relates to organometallic dendrimers and methods for producing the same. | 2011-07-07 |
20110163271 | ELECTRICALLY CONDUCTIVE POLYMER COMPOSITIONS - The present invention relates to electrically conductive polymer compositions, and their use in organic electronic devices. The electrically conductive polymer compositions include (i) an intrinsically conductive polymer having at least one monomer unit which is a pyridine-fused heteroaromatic and (ii) a fluorinated acid polymer. | 2011-07-07 |
20110163272 | METHOD FOR PRODUCING ELECTRODE MATERIAL, ELECTRODE MATERIAL, ELECTRODE AND BATTERY - Disclosed is a method for producing an electrode material which has high discharge capacity at high charge/discharge rate and enables to realize sufficient charge/discharge rate performance. Also disclosed are an electrode material, an electrode and a lithium ion battery. Specifically disclosed is a method for producing an electrode material, which is characterized in that a slurry containing an electrode active material or a precursor of the electrode active material, and organic compounds each selected from at least two groups among the group A, group B and group C is sprayed and dried for forming a granule, and the thus-formed granule is fired at a temperature not less than 500° C. but not more than 1000° C. in a non-oxidizing atmosphere. | 2011-07-07 |
20110163273 | COMPOSITE CARBON ELECTRODES USEFUL IN ELECTRIC DOUBLE LAYER CAPACITORS AND CAPACITIVE DEIONIZATION AND METHODS OF MAKING THE SAME - Composite carbon electrodes for use in, for example, Capacitive Deionization (CDI) of a fluid stream or, for example, an electric double layer capacitor (EDLC) are described. Methods of making the composite carbon electrodes are also described. The composite carbon electrode comprises an electrically conductive porous matrix comprising carbon; and an electric double layer capacitor, comprising an activated carbonized material, dispersed throughout the pore volume of the electrically conductive porous matrix. | 2011-07-07 |
20110163274 | ELECTRODE COMPOSITE, BATTERY ELECTRODE FORMED FROM SAID COMPOSITE, AND LITHIUM BATTERY COMPRISING SUCH AN ELECTRODE - An electrode composite and to its manufacturing process. The composite includes an active element, i.e. one exhibiting electrochemical activity, a conductive additive and a binder. The conductive additive is a mixture of conductive additives containing at least carbon nanofibres (CNFs) and at least carbon nanotubes (CNTs). Also, the negative electrodes for electrochemical devices of the lithium battery type including said composite and to the secondary (Li-ion) batteries provided with such a negative electrode. | 2011-07-07 |
20110163275 | CONDUCTIVITY OF RESIN MATERIALS AND COMPOSITE MATERIALS - A resin material is provided which comprises at least one thermoset resin, carbon conductive additive material, and at least one thermoplastic polymer resin. The thermoplastic polymer resin dissolves in the thermoset polymer resin and phase separates upon cure. There is also provided a method of making the resin material, and additionally a composite material that comprising said resin material in combination with a fibrous reinforcement. The resin material and composite material may each be used in an uncured or cured form, and may find particular use as a prepreg material. | 2011-07-07 |
20110163276 | POWDER MIXTURE TO BE MADE INTO EVAPORATION SOURCE MATERIAL FOR USE IN ION PLATING, EVAPORATION SOURCE MATERIAL FOR USE IN ION PLATING AND METHOD OF PRODUCING THE SAME, AND GAS BARRIER SHEET AND METHOD OF PRODUCING THE SAME - A powder mixture to be made into an evaporation source material for use in ion plating, and an evaporation source material useful for ion plating and a method of producing it, and a gas barrier sheet and a method of producing it. The powder mixture comprises 100 parts by weight of silicon oxide powder and 5 to 100 parts by weight of a conductive material powder. Preferably, both the silicon oxide powder and the conductive material powder have a mean particle diameter of 5 μm or less. The conductive material powder is preferably a powder of at least one material selected from metals and electrically conductive metallic oxides, nitrides and acid nitrides. The evaporation source material for use in ion plating is in the form of agglomerates having a mean particle diameter of 2 mm or more, or a block, obtained by granulating or compression-molding the powder mixture. | 2011-07-07 |
20110163277 | OXIDE SINTERED COMPACT FOR PREPARING TRANSPARENT CONDUCTIVE FILM - The present invention provides an ITO amorphous transparent conductive film used in a display electrode for a flat panel display or the like, which can be produced without heating a substrate and without feeding water during the sputtering, while achieving both high etchability and lower resistivity at high levels. An oxide sintered compact containing indium oxide as a main component, while containing one or more elements selected from nickel, manganese, aluminum and germanium as a first additive element, with the total content of the first additive element being 2-12 atom % relative to the total content of indium and the first additive element. | 2011-07-07 |
20110163278 | MODIFIED PARTICLES AND DISPERSIONS COMPRISING THESE - The present invention relates to particles which have been modified by a modifier and a dispersion medium comprising the modified particles. | 2011-07-07 |
20110163279 | OXIDE SINTERED COMPACT FOR PRODUCING TRANSPARENT CONDUCTIVE FILM - The present invention provides a sputtering target suitable for producing an amorphous transparent conductive film which can be formed without heating a substrate and without feeding water during the sputtering; which is easily crystallized by low-temperature annealing; and which has low resistivity after the crystallization. An oxide sintered compact containing an indium oxide as a main component, while containing tin as a first additive element, and one or more elements selected from germanium, nickel, manganese, and aluminum as a second additive element, with the content of tin which is the first additive element being 2-15 atom % relative to the total content of indium and tin, and the total content of the second additive element being 0.1-2 atom % relative to the total content of indium, tin and the second additive element. | 2011-07-07 |
20110163280 | Optical Nanomaterial Compositions - The present invention provides compositions (“Optical Nanomaterial Compositions”) comprising one or more nanomaterials and an optical coupling gel or an optical adhesive. The invention also provides methods for using the Optical Nanomaterial Compositions as an index-matching gel, an optical adhesive or an optical film, all of which are suitable for optical and sensing devices applications, including but not limited to noise suppression, passive Q-switching, mode-locking, waveform shaping, optical switching, optical signal regeneration, phase conjugation, in filter devices, dispersion compensation, wavelength conversion, soliton stabilization, microcavity applications, in interferometers (such as the Gires-Tournois interferometer), optical, magneto-optical or electro-optical modulation, biochemical sensors and photodetectors. | 2011-07-07 |
20110163281 | POLARIZER, METHOD FOR PREPARING THE SAME, AND POLARIZING PLATE PROVIDED WITH THE SAME - A polarizer includes a polyvinyl alcohol-based resin film in which iodine is oriented by adsorption, wherein an iodine orientation ratio, represented by the following Equation I, is about 20% to about 30%, | 2011-07-07 |
20110163282 | PHOTOCHROMIC MATERIAL - Photochromic dyes are disclosed. A photochromic dye can include a first photo-reactive group and a second photo-reactive group. A first photochromic reaction can be induced in the first photo-reactive group of the photochromic dye by radiation having a first wavelength, and a second photochromic reaction can be induced in the second photo-reactive group of the photochromic dye by radiation having a second wavelength. | 2011-07-07 |
20110163283 | AZO COMPOUNDS, AZO PIGMENTS, PIGMENT DISPERSION, COLORING COMPOSITION, AND INK FOR INKJET RECORDING - An azo pigment showing excellent coloring characteristics such as tinctorial strength and hue and excellent fastness such as light fastness, and a pigment dispersion containing the azo pigment are provided. | 2011-07-07 |
20110163284 | LIGHTING UNIT COVER - A lighting unit cover, having a resin composition including ultraviolet absorbent A, the ultraviolet absorbent A being a compound represented by formula (1): | 2011-07-07 |
20110163285 | Tool and method for lifting a reservoir - A two-part tool for lifting from a ground surface a reservoir located substantially adjacent a wall, the reservoir defining a reservoir bottom end supported on the ground surface and a reservoir top end substantially opposed to the reservoir bottom end. The two part-tool includes: a wedge component defining a wedge component first end and a substantially opposed wedge component second end, the wedge component defining opposed first and second contact surfaces each extending between the wedge component first and second ends, the first and second contact surfaces diverging from each other in a direction leading from the wedge component first end toward the wedge component second end; a jack component, the jack component including a base, a lifting member operatively coupled to the base so as to be movable relatively thereto, and an actuator operatively coupled to the lifting member and to the base for selectively moving the lifting member relatively to the base. | 2011-07-07 |
20110163286 | Tab Winch for Stage Use - A winch with adjustable arms allowing the length to be adjusted. The winch can have a very thin drum to allow it to fit in confined spaces. | 2011-07-07 |
20110163287 | Safety barricade system - The present invention is a strong, rigid, safety barricade system that is made of a material that is either corrugated or solid and can be assembled around a work or dangerous site to prevent or deter entry thereto and avoid resulting injury or interference with work. The safety barricade system consists of interlocking panels that attach to each other by sliding two, slotted, rigid flaps on the lateral end of one panel into the two slots that form the rigid flaps of another panel, and such panels are attached to an existing structure by use of a U-shaped rod that connects to a panel on one side and, by a suction cup, to the existing structure on the other. After interconnection, the panels are locked in place using a U-shaped interconnecting rod and an irreversible plastic “tie.” The barricade system is lightweight, easy to assemble and portable. | 2011-07-07 |
20110163288 | Manufacturing Method for Pipe-Shaped Electrode Phase Change Memory - A method for manufacturing a memory cell device includes forming a bottom electrode comprising a pipe-shaped member, a top, a bottom and sidewalls having thickness in a dimension orthogonal to the axis of the pipe-shaped member, and having a ring-shaped top surface. A disc shaped member is formed on the bottom of the pipe-shaped member having a thickness in a dimension coaxial with the pipe-shaped member that is not dependent on the thickness of the sidewalls of the pipe-shaped member. A layer of phase change material is deposited in contact with the top surface of the pipe-shaped member. A top electrode in contact with the layer of programmable resistive material. An integrated circuit including an array of such memory cells is described. | 2011-07-07 |
20110163289 | STRUCTURE AND METHOD OF FORMING BURIED-CHANNEL GRAPHENE FIELD EFFECT DEVICE - A novel buried-channel graphene device structure and method for manufacture. The new structure includes a two level channel layer comprised of a buried-channel graphene layer with an amorphous silicon top channel layer. The method for making such structure includes the steps of depositing a graphene layer on a substrate, depositing an amorphous silicon layer on the graphene layer, converting the upper layer of the amorphous silicon layer to a gate dielectric by nitridation, oxidation or oxynitridation, while keeping the lower layer of the amorphous silicon layer to serve as part of the channel to form the buried-channel graphene device. | 2011-07-07 |
20110163290 | METHODS FOR PASSIVATING A CARBONIC NANOLAYER - Methods for passivating a carbonic nanolayer (that is, material layers comprised of low dimensional carbon structures with delocalized electrons such as carbon nanotubes and nano-scopic graphene flecks) to prevent or otherwise limit the encroachment of another material layer are disclosed. In some embodiments, a sacrificial material is implanted within a porous carbonic nanolayer to fill in the voids within the porous carbonic nanolayer while one or more other material layers are applied over or alongside the carbonic nanolayer. Once the other material layers are in place, the sacrificial material is removed. In other embodiments, a non-sacrificial filler material (selected and deposited in such a way as to not impair the switching function of the carbonic nanolayer) is used to form a barrier layer within a carbonic nanolayer. In other embodiments, carbon structures are combined with and nanoscopic particles to limit the porosity of a carbonic nanolayer. | 2011-07-07 |
20110163291 | SOLID STATE MATERIAL - A solid state system comprising a host material and a quantum spin defect, wherein the quantum spin defect has a T | 2011-07-07 |
20110163292 | Nanowire Array-Based Light Emitting Diodes and Lasers - Semiconductor nanowire arrays are used to replace the conventional planar layered construction for fabrication of LEDs and laser diodes. The nanowire arrays are formed from III-V or II-VI compound semiconductors on a conducting substrate. For fabrication of the device, an electrode layer is deposited on the substrate, a core material of one of a p-type and n-type compound semiconductor material is formed on top of the electrode as a planar base with a plurality of nanowires extending substantially vertically therefrom. A shell material of the other of the p-type and n-type compound semiconductor material is formed over an outer surface of the core material so that a p-n junction is formed across the planar base and over each of the plurality of nanowires. An electrode coating is formed an outer surface of the shell material for providing electrical contact to a current source. Heterostructures and superlattices grown along the lengths of the nanowires allow the confinement of photons in the quantum well to enhance the efficiency and as well as color tuning. | 2011-07-07 |
20110163293 | Vertical Light-Emitting Diode and Manufacture Method Thereof - The present application describes a vertical light-emitting diode (VLED) and its manufacture method that use the combination of a reflective layer, a transparent conducting layer and transparent dielectric layer as structural layers for promoting uniform current distribution and increasing light extraction. In the VLED, a transparent conducting layer is formed on a first outer surface of a stack of multiple group III nitride semiconductor layers. A transparent dielectric layer is then formed on a side of the transparent conducting layer opposite the side of the multi-layer structure. A first electrode structure is then formed on the transparent dielectric layer in electrical contact with the transparent conducting layer via a plurality of contact windows patterned through the transparent dielectric layer. The transparent conducting layer and the transparent dielectric layer are used as structural layers for improving light extraction. | 2011-07-07 |
20110163294 | LIGHT EMITTING ELEMENT AND A PRODUCTION METHOD THEREFOR - Disclosed are a light emitting device and a method of manufacturing the same. The light emitting device includes a support substrate, a wafer bonding layer on the support substrate, a current spreading layer on the wafer bonding layer, a second conductive semiconductor layer on the current spreading layer, an active layer on the second conductive semiconductor layer, a first conductive semiconductor layer on the active layer, a surface modification layer on the first conductive semiconductor layer, and a first electrode layer on the surface modification layer. | 2011-07-07 |
20110163295 | SEMICONDUCTOR WITH LOW DISLOCATION - A semiconductor includes a semiconductor layer, a plurality of recesses and a blocking layer. The recesses are formed on a surface of the semiconductor layer by etching fragile locations of the semiconductor layer where dislocation occurs. The blocking layer is filled in each recess. The semiconductor further includes a re-epitaxial semiconductor layer grown from a surface of the semiconductor layer without the covering of blocking layer, and the re-epitaxial semiconductor layer laterally overgrows toward areas of the recesses for overlaying the blocking layer. | 2011-07-07 |
20110163296 | CNT-BASED SENSORS: DEVICES, PROCESSES AND USES THEREOF - Disclosed herein are methods of preparing and using doped MWNT electrodes, sensors and field-effect transistors. Devices incorporating doped MWNT electrodes, sensors and field-effect transistors are also disclosed. | 2011-07-07 |
20110163297 | Core-Shell-Shell Nanowire Transistor - A fabrication method is provided for a core-shell-shell (CSS) nanowire transistor (NWT). The method provides a cylindrical CSS nanostructure with a semiconductor core, an insulator shell, and a conductive shell. The CSS nanostructure has a lower hemicylinder overlying a substrate surface. A first insulating film is conformally deposited overlying the CSS nanostructure and anisotropically plasma etched. Insulating reentrant stringers are formed adjacent the nanostructure lower hemicylinder. A conductive film is conformally deposited and selected regions are anisotropically plasma etched, forming conductive film gate straps overlying a gate electrode in a center section of the CSS nanostructure. An isotropically etching removes the insulating reentrant stringers adjacent the center section of the CSS nanostructure, and an isotropically etching of the conductive shell overlying the S/D regions is performed. A screen oxide layer is deposited over the CSS nanostructure. The source/drain (S/D) regions in end sections of the CS nanostructure flanking are doped. | 2011-07-07 |
20110163298 | Graphene and Hexagonal Boron Nitride Devices - Graphene layers, hexagonal boron nitride (hBN) layers, as well as other materials made of primarily sp2 bonded atoms and associated methods are disclosed. In one aspect, the present invention provides graphene and hBN devices. In one aspect, for example, an electronic device is provided including a graphene layer and a planar hBN layer operably associated with the graphene layer and forming a functional interface therebetween. Numerous functional interfaces are contemplated, depending on the desired functionality of the device. | 2011-07-07 |
20110163299 | Electroluminescent Devices Employing Organic Cathodes - The disclosure provides methods, materials, and devices suitable for use in electroluminescent devices. In one embodiment, for example, there is provided a layered cathode comprising a metal substrate and an intermediate organic or organometallic layer having an electron accepting group. The intermediate layer provides an interface with an overlaying electroluminescent layer. The disclosure finds utility, for example, in the field of microelectronic devices. | 2011-07-07 |
20110163300 | ORGANIC LIGHT-EMITTING MATERIAL, ORGANIC LIGHT-EMITTING ELEMENT USING THE SAME AND METHOD OF FORMING THE SAME - The present invention provides compound of formula (I) | 2011-07-07 |
20110163301 | PYROMELLITIC DIIMIDE ORGANIC SEMICONDUCTORS AND DEVICES - n-type organic semiconductors have a pyromellitic diimide structure and electronic or electro-optic devices include pyromellitic diimide compounds as organic semiconductors. Specific semiconductors include pyromellitic diimide compounds have sidechains comprising fluorine substituted aliphatic or aromatic moieties linked to the pyromellitic diimide structure by an alkylene or heteroalkylene linking group. An electronic or electro-optic device includes a first electrode, a second electrode space apart from the first electrode, and an organic semiconductor layer arranged between the first and second electrodes. The organic semiconductor layer comprises a pyromellitic diimide compound. | 2011-07-07 |
20110163302 | HOLE TRANSPORT MATERIALS HAVING A SULFUR-CONTAINING GROUP - Novel materials are provided, having a single phenyl or a chain of phenyls where there is a nitrogen atom on each end of the single phenyl or chain of phenyls. The nitrogen atom may be further substituted with particular thiophene, benzothiophene, and triphenylene groups. Organic light-emitting devices are also provided, where the novel materials are used as a hole transport material in the device. Combinations of the hole transport material with specific host materials are also provided. | 2011-07-07 |
20110163303 | POLYMERIC MATERIAL, METHOD OF FORMING THE POLYMERIC MATERIAL, AND MEHTOD OF FORMING A THIN FILM USING THE POLYMERIC MATERIAL - A polymeric material includes a pendant polycyclic aromatic compound precursor. | 2011-07-07 |
20110163304 | Organic Material and Electrophotographic Device - The invention relates to an electronic device, particularly photoreceptor or electrophotographic device, comprising an organic function material, which comprises an electron transport component and a hole trap component, to an organic material, which is a mixture or a copolymer comprising an electron transport component and a hole trap component, its use as charge transport material in a photoreceptor or electrophotographic device, especially of the positive charging type, and to electronic devices comprising such a material. | 2011-07-07 |
20110163305 | RADIATION DETECTOR - An X-ray detector | 2011-07-07 |
20110163306 | RADIATION DETECTOR - A radiation detector of this invention has a curable synthetic resin film covering exposed surfaces of a radiation sensitive semiconductor layer, a carrier selective high resistance film and a common electrode, in which a material allowing no chloride to mix in is used in a manufacturing process of the curable synthetic resin film. This prevents pinholes and voids from being formed by chlorine ions in the carrier selective high resistance film and semiconductor layer. Also a protective film which does not transmit ionic materials may be provided between the exposed surface of the common electrode and the curable synthetic resin film, thereby to prevent the carrier selective high resistance film from being corroded by chlorine ions included in the curable synthetic resin film, and to prevent an increase of dark current flowing through the semiconductor layer. | 2011-07-07 |
20110163307 | THIN-FILM TRANSISTOR AND FORMING METHOD THEREOF - A method for forming a thin-film transistor (TFT) includes providing a substrate, forming a first patterned conducting layer on the substrate, forming an organic dielectric layer on the first patterned conducting layer and the substrate, forming a seeding layer on the organic dielectric layer, using the seeding layer as a crystal growing base to form an inorganic semiconductor layer on the seeding layer, and forming a second patterned conducting layer on the inorganic semiconductor layer. | 2011-07-07 |
20110163308 | ARRAY OF VERTICAL UV LIGHT-EMITTING DIODES AND METHOD FOR PRODUCING IT - An array of vertical light-emitting diodes includes a flexible substrate-free array of vertical light-emitting diodes having a flexible polymer film forming an insulating organic layer, and a plurality of nanowires embedded in the flexible polymer film. Each of the nanowires is formed by a first and second inorganic semiconductor material or by a first organic and the first inorganic semiconductor material disposed in a respective channel in the flexible polymer film so as to form a pn-hetero-junction. | 2011-07-07 |
20110163309 | Organic light-emitting display device and method of manufacturing the same - An organic light-emitting display device includes a substrate, a plurality of thin-film transistors on the substrate, each thin-film transistor including an active layer, a planarization layer on the thin-film transistors, a first electrode on the planarization layer and electrically connected to a thin-film transistor, and an ion blocking layer on the planarization layer, the ion blocking layer overlapping the active layer. | 2011-07-07 |
20110163310 | Thin-film transistor having etch stop multi-layer and method of manufacturing the same - A thin-film transistor (TFT) may include a channel layer, an etch stop multi-layer, a source, a drain, a gate, and a gate insulation layer. The etch stop multi-layer may include a first etch stop layer and a second etch stop layer. The second etch stop layer may prevent or reduce an etchant from contacting the channel layer. | 2011-07-07 |
20110163311 | Semiconductor Device and Manufacturing Method Thereof - An object is to provide a semiconductor device of which a manufacturing process is not complicated and by which cost can be suppressed, by forming a thin film transistor using an oxide semiconductor film typified by zinc oxide, and a manufacturing method thereof. For the semiconductor device, a gate electrode is formed over a substrate; a gate insulating film is formed covering the gate electrode; an oxide semiconductor film is formed over the gate insulating film; and a first conductive film and a second conductive film are formed over the oxide semiconductor film. The oxide semiconductor film has at least a crystallized region in a channel region. | 2011-07-07 |
20110163312 | SEMICONDUCTOR-ON-DIAMOND DEVICES AND METHODS OF FORMING - The present invention provides semiconductor-on-diamond devices, and methods for the formation thereof. In one aspect, a mold is provided which has an interface surface configured to inversely match a configuration intended for the device surface of a diamond layer. An adynamic diamond layer is then deposited upon the diamond interface surface of the mold, and a substrate is joined to the growth surface of the adynamic diamond layer. At least a portion of the mold can then be removed to expose the device surface of the diamond which has received a shape which inversely corresponds to the configuration of the mold's diamond interface surface. The mold can be formed of a suitable semiconductor material which is thinned to produce a final device. Optionally, a semiconductor material can be coupled to the diamond layer subsequent to removal of the mold. | 2011-07-07 |
20110163313 | BULK SILICON WAFER PRODUCT USEFUL IN THE MANUFACTURE OF THREE DIMENSIONAL MULTIGATE MOSFETS - A method for preparing a semiconductor structure for use in the manufacture of three dimensional transistors, the structure comprising a silicon substrate and an epitaxial layer, the epitaxial layer comprising an endpoint detection epitaxial region comprising an endpoint detection impurity selected from the group consisting of carbon, germanium, or a combination. | 2011-07-07 |
20110163314 | NITROGEN-OXIDE GAS SENSOR WITH LONG SIGNAL STABILITY - The present invention provides a nitrogen-oxide gas sensor that is able to measure nitric oxide and nitrogen dioxide at the same time and ensure measurement accuracy and long stability. For these purposes, the nitrogen-oxide gas sensor includes: an oxide ion conductive solid electrolyte; a primary film that contacts the solid electrolyte and is made of a p-type semi-conductor metal oxide; a secondary film that contacts the solid electrolyte and is made of a p-type semiconductor metal oxide; an n-type semiconductor metal oxide that is included in at least one of the primary and secondary films; a power source that applies electric power to the primary and secondary films by electrically connecting a primary node to the primary film and a secondary node to the secondary film; and a measurement unit that measures the electric potential difference between the primary and secondary nodes. | 2011-07-07 |
20110163315 | DISPLAY DEVICE - The present invention provides an active matrix type display device having a high aperture ratio and a required auxiliary capacitor. A source line and a gate line are overlapped with part of a pixel electrode. This overlapped region functions to be a black matrix. Further, an electrode pattern made of the same material as the pixel electrode is disposed to form the auxiliary capacitor by utilizing the pixel electrode. It allows a required value of auxiliary capacitor to be obtained without dropping the aperture ratio. Also, it allows the electrode pattern to function as a electrically shielding film for suppressing the cross-talk between the source and gate lines and the pixel electrode. | 2011-07-07 |
20110163316 | THIN FILM TRANSISTOR AND SEMICONDUCTOR DEVICE - An impurity element imparting one conductivity type is included in a layer close to a gate insulating film of layers with high crystallinity, so that a channel formation region is formed not in a layer with low crystallinity which is formed at the beginning of film formation but in a layer with high crystallinity which is formed later in a microcrystalline semiconductor film. Further, the layer including an impurity element is used as a channel formation region. Furthermore, a layer which does not include an impurity element imparting one conductivity type or a layer which has an impurity element imparting one conductivity type at an extremely lower concentration than other layers, is provided between a pair of semiconductor films including an impurity element functioning as a source region and a drain region and the layer including an impurity element functioning as a channel formation region. | 2011-07-07 |
20110163317 | ELECTROOPTICAL DEVICE SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, ELECTROOPTICAL DEVICE, AND ELECTRONIC APPARATUS - An electrooptical device substrate, contains: a first insulating film provided on a substrate; two or more pixels; a first concave portion provided in the first insulating film over the two or more pixels; a second concave portion provided on the bottom surface of the first concave portion; a thin film transistor containing an organic semiconductor layer provided in the second concave portion, a gate insulating film provided on the organic semiconductor layer, and a gate electrode provided on the gate insulating film and being matched to one pixel among the two or more pixels; a scanning line which is provided at an upper side with respect to the gate insulating film and provided in the first concave portion over the two or more pixels; and a data line electrically connected to the thin film transistor. | 2011-07-07 |
20110163318 | DISPLAY DEVICE - A display device includes: i) a substrate member having a transparent area and a plurality of pixel areas, the pixel areas being spaced apart from each other along a first direction and a second direction, the transparent area located between the pixel areas, the second direction being perpendicular to the first direction; and ii) an emission layer located at each of the pixel areas. Among the plurality of pixel areas, a width of the transparent area along the first direction between two pixel areas varies along the second direction. The first direction may be the horizontal direction of a screen realized by the substrate member, the second direction may be a vertical direction, and the emission layer may have a width along the horizontal direction that varies along the vertical direction. | 2011-07-07 |
20110163319 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - Array substrates for liquid crystal display (LCD) devices are formed on a substrate with first and second gate lines crossing a data line to define first and second pixel regions. A thin film transistor includes a source electrode and a drain electrode. A metal pattern overlaps a common line and makes up a portion of the drain electrode. A passivation layer is disposed on the source and drain electrodes and on the metal pattern. A first pixel electrode is connected to the metal pattern and a common electrode is connected to the common line. Various repair patterns are formed to define one or more repairing portions that enable connection of the drain electrode or metal pattern to a second pixel electrode of the second pixel region if the cut line is cut in the event the first pixel electrode fails to display an image. | 2011-07-07 |
20110163320 | Semiconductor Device, Driving Method Thereof and Electronic Device - The invention provides a semiconductor device having a current input type pixel in which a signal write speed is increased and an effect of variations between adjacent transistors is reduced. When a set operation is performed (write a signal), a source-drain voltage of one of two transistors connected in series becomes quite low, thus the set operation is performed to the other transistor. In an output operation, the two transistors operate as a multi-gate transistor, therefore, a current value in the output operation can be small. In other words, a current in the set operation can be large. Therefore, an effect of intersection capacitance and wiring resistance which are parasitic on a wiring and the like do not affect much, thereby the set operation can be performed rapidly. As one transistor is used in the set operation and the output operation, an effect of variations between adjacent transistors is lessened. | 2011-07-07 |
20110163321 | NROM FLASH MEMORY DEVICES ON ULTRATHIN SILICON - An NROM flash memory cell is implemented in an ultra-thin silicon-on-insulator structure. In a planar device, the channel between the source/drain areas is normally fully depleted. An oxide layer provides an insulation layer between the source/drain areas and the gate insulator layer on top. A control gate is formed on top of the gate insulator layer. In a vertical device, an oxide pillar extends from the substrate with a source/drain area on either side of the pillar side. Epitaxial regrowth is used to form ultra-thin silicon body regions along the sidewalls of the oxide pillar. Second source/drain areas are formed on top of this structure. The gate insulator and control gate are formed on top. | 2011-07-07 |
20110163322 | PHOSPHOR, PHOSPHOR MANUFACTURING METHOD, AND WHITE LIGHT EMITTING DEVICE - Provided are a phosphor, a phosphor manufacturing method, and a white light emitting device. The phosphor is represented as a chemical formula of M | 2011-07-07 |
20110163323 | GaN SINGLE CRYSTAL SUBSTRATE AND METHOD OF MAKING THE SAME - The method of making a GaN single crystal substrate comprises a mask layer forming step of forming on a GaAs substrate | 2011-07-07 |