| 27th week of 2012 patent applcation highlights part 15 |
| Patent application number | Title | Published |
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| 20120168670 | COBALT CARBIDE-BASED NANOPARTICLE PERMANENT MAGNET MATERIALS - A composition of a crystalline ferromagnetic material based upon nanoscale cobalt carbide particles and to a method of manufacturing the ferromagnetic material of the invention via a polyol reaction are disclosed. The crystalline ferromagnetic cobalt carbide nanoparticles of the invention are useful for high performance permanent magnet applications. The processes according to the invention are extendable to other carbide phases, for example to Fe-, FeCo-carbides. Fe- and FeCo-carbides are realizable by using as precursor salts Fe-, Co-, and mixtures of Fe- and Co-salts, such as acetates, nitrates, chlorides, bromides, citrates, and sulfates, among others. The materials according to the invention include mixtures and/or admixtures of cobalt carbides, as both Co | 2012-07-05 |
| 20120168671 | VOLUME-LABELED NANOPARTICLES AND METHODS OF PREPARATION - Compositions comprising nanosized objects (i.e., nanoparticles) in which at least one observable marker, such as a radioisotope or fluorophore, is incorporated within the nanosized object. The nanosized objects include, for example, metal or semi-metal oxide (e.g., silica), quantum dot, noble metal, magnetic metal oxide, organic polymer, metal salt, and core-shell nanoparticles, wherein the label is incorporated within the nanoparticle or selectively in a metal oxide shell of a core-shell nanoparticle. Methods of preparing the volume-labeled nanoparticles are also described. | 2012-07-05 |
| 20120168672 | COMPOSITIONS COMPRISING 2,3,3,3-TETRAFLUOROPROPENE, 2-CHLORO-2,3,3,3-TETRAFLUOROPROPANOL, 2-CHLORO-2,3,3,3-TETRAFLUORO-PROPYL ACETATE OR ZINC (2-CHLORO-2,3,3,3-TETRAFLUOROPROPOXY) CHLORIDE - Compositions comprising CF | 2012-07-05 |
| 20120168673 | DUST SUPPRESSION AGENT - A composition for dust suppression including an acrylic polymer, a polyvinyl acetate polymer, glycerin, and water is herein disclosed. | 2012-07-05 |
| 20120168674 | ENVIRONMENTALLY-FRIENDLY FUNCTIONAL ANTIFOAMING AGENT USING LOESS - An aspect of the present disclosure relates to a functional defoaming agent composition, and more particularly to an environmentally-friendly defoaming agent composition containing loess. In an aspect, a loess-based, environmentally-friendly functional defoaming agent includes: 1-20 wt % loess; 10-30 wt % silicone resin having a kinematic viscosity of 10-50,000 cst; 1-5 wt % thickening agent; 1-10 wt % natural surfactant; 1-10 wt % water-purifying agent; and 60-80 wt % water. In another aspect, a loess-based, environmentally friendly functional defoaming agent includes: 1-20 wt % inorganic mixture of loess with at least one selected from among elvan, tourmaline and germanium; 10-30 wt % silicone resin having a kinematic viscosity of 10-50,000 cst; 1-5 wt % thickening agent; 1-10 wt % natural surfactant; 1-10 wt % water-purifying agent; and 60-80 wt % water. | 2012-07-05 |
| 20120168675 | Additive for nickel-zinc battery - A composition that contains nickel oxyhydroxide, nickel metal, ruthenium oxide (Ru02) and a binder is prepared as the cathode for a nickel-zinc battery. Metal oxide or hydroxide with a rare earth oxide may be included in the cathode to improve the electrode capacity and shelf life. Optionally, zinc oxide is added to the cathode to facilitate charger transfer and improve the characteristics of high rate discharging. The cathode significantly increases the charging efficiency, promotes the overpotential of oxygen evolution, and intensifies the depth of discharging, thereby increasing the overall efficiency and lifespan of the battery. | 2012-07-05 |
| 20120168676 | Acceleration of particles beyond the speed of light and applications - With my device, I can accelerate in void particles of matter beyond the speed of light thanks to particles, antiparticles of antimatter and electromagnetic or electrostatic field. | 2012-07-05 |
| 20120168677 | LIQUID CRYSTAL COMPOUND, LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - A liquid crystal compound represented by formula (1-1). | 2012-07-05 |
| 20120168678 | Phosphor for Scintillator - Provided is a phosphor for scintillator that can absorb radiation and convert it into visible light, and which has a short fluorescence decay time. The phosphor contains a lutetium sulfide-containing host material and an activator agent ion, for example, a phosphor comprising a composition represented by the general formula (Lu | 2012-07-05 |
| 20120168679 | METHOD OF MODIFYING PHOSPHOR AND PHOSPHOR COMPOSITION AND MANUFACTURING METHOD OF THE SAME AND PHOSPHOR SOLUTION - A method of modifying a phosphor and a phosphor composition and a manufacturing method of the same and a phosphor solution are provided. The phosphor composition includes a silicone resin and a modified phosphor. The modified phosphor includes a phosphor and a nano-silica particle. The nano-silica particle is adhered to the phosphor. A weight ratio of the modified phosphor to the silicone resin is substantially between 1:0.005 and 1:0.1. | 2012-07-05 |
| 20120168680 | Compact Fuel Processor - A fuel processor for producing a hydrogen-containing product stream from a fuel stream and an oxidant stream incorporates a particulate filter assembly comprising a plurality of filter segments separated by expansion joints to accommodate dimensional changes that result from temperature fluctuations. Other embodiments of a fuel processor incorporate, instead or in addition, one or more of: a flame rod as a temperature sensing device for a reforming reaction; a two-sleeve concentric type heat exchanger; a mixing tube manufactured from an alumina-silica based material; and a wet blanket type of insulation. | 2012-07-05 |
| 20120168681 | Surface Modified Metal Nano-Particle and Use Thereof - The present invention provides a metal nanoparticle that is surface-modified with a hydrophilic or hydrophobic functional group, and a composition for optical detection comprising the same. The surface-modified nanoparticles according to the present invention form clusters suitable for optical detection, for example, suitable as an X-ray contrast agent, and have surface plasmon energy in the visible region, thereby being usefully applied to a variety of optical detection methods. | 2012-07-05 |
| 20120168682 | PEDOT/PSS COMPOSITION AND PEDOT/PSS FILM USING THE SAME - Disclosed herein is a PEDOT/PSS composition, including PEDOT/PSS, a solvent, a compatibilizer and a water-soluble conductive polymer, and a transparent electrode. Since a transparent electrode is formed by adding a compatibilizer and a water-soluble conductive polymer to PEDOT/PSS, the transparent electrode has excellent flexibility, can be easily coated and has a low surface resistance of 240˜300 Ω/□, so that this transparent electrode can be used as a transparent electrode for displays. | 2012-07-05 |
| 20120168683 | ANISOTROPIC CONDUCTIVE FILM, COMPOSITION FOR THE SAME, AND APPARATUS INCLUDING THE SAME - An anisotropic conductive film includes a binder part, a curing part, an initiator, and conductive particles, wherein the binder part includes at least one of a nitrile butadiene rubber (NBR) resin and a urethane resin, the binder part having an ion content of more than 0 ppm to about 100 ppm. | 2012-07-05 |
| 20120168684 | PROCESS FOR SINTERING NANOPARTICLES AT LOW TEMPERATURES - Provided is a process for low temperature sintering of a pattern on a substrate. | 2012-07-05 |
| 20120168685 | METHOD OF POST-TREATING CONDUCTIVE FILM AND CONDUCTIVE FILM USING THE SAME - Disclosed is a method of post-treating a conductive film by oxidizing the conductive film using dipping or spraying with an acid solution, so that the band gap of the conductive polymer is decreased, thus increasing the transmittance and electrical conductivity of the conductive film. | 2012-07-05 |
| 20120168686 | Continuous Synthesis of Carbon-Coated Lithium-Iron-Phosphate - The invention relates to a continuous process for preparing carbon-coated lithium-iron-phosphate particles, wherein the carbon-coated lithium-iron-phosphate particles have a mean (d | 2012-07-05 |
| 20120168687 | Polypyrrole and Silver Vanadium Oxide Composite - In one embodiment of the present disclosure, a composite electrode for a battery is provided. The composite electrode includes silver vanadium oxide present in an amount from about 75 weight percent to about 99 weight percent and polypyrrole present in an amount from about 1 weight percent to about 25 weight percent. | 2012-07-05 |
| 20120168688 | BINDER RESIN COMPOSITION FOR ELECTRODE, ELECTRODE MIXTURE PASTE, AND ELECTRODE - The present invention relates to a binder resin composition for an electrode, including a polyamic acid and a solvent, wherein the polyamic acid is (i) a polyamic acid which includes a tetracarboxylic acid component including 10 to 100 mol % of 4,4′-oxydiphthalic acid and 90 to 0 mol % of 3,3′,4,4′-biphenyltetracarboxylic acid and/or pyromellitic acid and a diamine component including an aromatic diamine having 1 to 4 aromatic rings, (ii) a polyamic acid which includes a tetracarboxylic acid component including 3,3′,4,4′-biphenyltetracarboxylic acid dianhydride and a diamine component including 10 to 90 mol % of p-phenylene diamine and 90 to 10 mol % of 4,4′-diaminodiphenyl ether, or (iii) a polyamic acid which includes a tetracarboxylic acid component including 3,3′,4,4′-biphenyltetracarboxylic acid dianhydride and a diamine component including 40 mol % or more of a bis[4-(4-aminophenoxy)phenyl] compound. | 2012-07-05 |
| 20120168689 | LEAD-FREE CONDUCTIVE PASTE COMPOSITION - A lead-free conductive paste composition includes silumin powder, lead-free glass frits, an organic binder, stearic acid zinc, and aluminum powder. | 2012-07-05 |
| 20120168690 | NANOWIRE RECOVERY METHODS, COMPOSITIONS, AND ARTICLES - Methods of recovering compositions comprising nanowires and the product compositions are disclosed and claimed. The product compositions produced by these methods are able to provide equivalent performance to virgin raw materials in transparent conductive film manufacturing processes. | 2012-07-05 |
| 20120168691 | PASTE COMPOSITION FOR SOLAR BATTERY ELECTRODE - It is provided a paste composition for a solar battery electrode, that includes electrically conductive powder, glass frit, and a vehicle, wherein the glass frit is made of glass that comprises, as amounts converted into those of oxides as ratios, Li | 2012-07-05 |
| 20120168692 | Method for Preparing Water-Soluble Nanoparticles and Their Dispersions - Provided is a method for preparing an aqueous dispersion of metal nanoparticles having superior dispersibility and being sinterable at low temperature by modifying the surface of metal nanoparticles having hydrophobic groups with hydrophilic groups. Specifically, by treating the surface hydrophobic groups of the metal nanoparticles with a surface modification solution containing a surfactant and a wetting-dispersing agent, the treatment throughput can be improved about 10-fold and the particles can be monodispersed without agglomeration. Further, by using an antioxidant and a ligand removal agent in the solution, denaturation and oxidation of the particles can be prevented and the high-boiling-point hydrophobic ligands can be eliminated effectively. The hydrophilically treated metal nanoparticles may be dispersed in an aqueous-based solvent to prepare a metal ink sinterable at low temperature. | 2012-07-05 |
| 20120168693 | SILVER-(CONJUGATED COMPOUND) COMPOSITE - A silver-(conjugated compound) composite comprising silver particles having a number-average Feret diameter of not more than 1,000 nm, and a conjugated compound having a weight-average molecular weight of not less than 3.0×10 | 2012-07-05 |
| 20120168694 | Tellurium-containing nanocrystalline materials - Tellurium-containing nanocrystallites are produced by injection of a precursor into a hot coordinating solvent, followed by controlled growth and annealing. Nanocrystallites may include CdTe, ZnTe, MgTe, HgTe, or alloys thereof. The nanocrystallites can photoluminesce with quantum efficiencies as high as 70%. | 2012-07-05 |
| 20120168695 | GROUP-III ELEMENT NITRIDE CRYSTAL PRODUCING METHOD AND GROUP-III ELEMENT NITRIDE CRYSTAL - A method for producing a high-quality group-III element nitride crystal at a high crystal growth rate, and a group-III element nitride crystal are provided. The method includes the steps of placing a group-III element, an alkali metal, and a seed crystal of group-III element nitride in a crystal growth vessel, pressurizing and heating the crystal growth vessel in an atmosphere of nitrogen-containing gas, and causing the group-III element and nitrogen to react with each other in a melt of the group-III element, the alkali metal and the nitrogen so that a group-III element nitride crystal is grown using the seed crystal as a nucleus. A hydrocarbon having a boiling point higher than the melting point of the alkali metal is added before the pressurization and heating of the crystal growth vessel. | 2012-07-05 |
| 20120168696 | METHOD FOR MAKING ELECTRODE COMPOSITE MATERIAL - The present disclosure relates to a method for making an electrode composite material. In the method, a trivalent aluminum source, a doped element source, and electrode active material particles are provided. The trivalent aluminum source and the doped element source are dissolved in a solvent to form a solution having trivalent aluminum ions and doped ions. The electrode active material particles are mixed with the solution having the trivalent aluminum ions and doped ions to form a mixture. A phosphate radical containing solution is added to the mixture to react with the trivalent aluminum ions and doped ions, thereby forming a number of electrode composite material particles. The electrode composite material particles are heated. | 2012-07-05 |
| 20120168697 | BROADLY ABSORBING METALLOPORPHYRIN-BASED MULTICHROMOPHORIC ARRAYS FOR TRIPLET HARVESTING - The present disclosure relates to multichromophoric assemblies comprising metalloporphyrin scaffolds. The present disclosure also relates, in part, to methods for generating electric-field-stabilized geminate polaron pairs comprising applying electric fields to the multichromophoric assemblies described herein, or alternatively, directly to the metalloporphyrins provided by the present disclosure. The present disclosure further relates, in part, to multichromophoric assemblies comprising metalloporphyrin scaffolds, which exhibit enhanced energy transfer properties. | 2012-07-05 |
| 20120168698 | IMPROVED MATERIALS - The present invention relates to materials having improved and useful properties and to methods relating to the manufacture of said materials. In particular the present invention relates to a method of modifying the surface of a material, preferably a fibrous material, to enable carbon dioxide to be carried by the surface. The carbon dioxide may be bound to the surface in a reversible or irreversible manner. The method of treating the surface of a material comprises (a) contacting the surface of the material with a composition comprising an amino compound; and (b) contacting the surface of the material with a composition comprising carbon dioxide or a source thereof. | 2012-07-05 |
| 20120168699 | DEVICE AND METHOD FOR FISH TAPE REEL SYSTEM - It is provided an electrically powered fish tape manipulating device. The device includes a control unit, a power source and a two-way belt system rotatable in accordance with the provided power. A segment of the fish tape is disposed forcibly on the belt such that rotating the belt system forces the fish tape to propagate accordingly. The device includes a rotatable reel assembly for receiving a length of a fish tape. Manipulation parameters include direction and speed of belt rotation, and a serial list of manipulations, defined by direction, speed and duration values. A motor receives the provided power, a gear reduces rotation speed, and drives the two-way rotating belt system. A sliding clutch having a sliding surface forces the fish tape segment to propagate whenever the belt rotates. The control unit is associated with a wireless remote controller. A conduit coupler receives the fish tape and guides it into a conduit. The coupler includes a guiding pipe for guiding the fish tape between the device and the conduit, a fastening member, and means for pressing portions of the fastening member to walls of a structure associated with the conduit, thereby connecting the guiding pipe to the conduit. | 2012-07-05 |
| 20120168700 | CONDUCTOR STRINGING APPARATUS AND PROCESS - A line stringing apparatus includes in combination an electric motor, motor controller and a processor switchable between a pulling mode and a tensioning mode. An electric motor expends electrical energy when pulling the line and generates electrical energy when tensioning the line. The processor outputting commands to the motor controller for control thereof and for application of electrical energy from the batteries to the electric motor when in the pulling mode and for application of electrical energy generated by the electric motor to the plurality of batteries when in tensioning mode. The processor limits electric motor torque and speed based on operator commands for speed and torque in said pulling mode; and, the processor controlling electric motor torque in the tensioning mode. | 2012-07-05 |
| 20120168701 | Vehicle Lift - A motor vehicle lift includes two parallel runways, each provided with at least two elevating devices each having first and second uprights hinged to each other, to the floor (runway) and to the runway (floor) respectively; first and second arms hinged together, the second arm being further hinged to the second upright along a hinging axis equidistant from the axis on which the second upright is hinged to the runway (floor) and from the end of the second arm, which is slidable along a guide provided in the runway (floor), the first arm being also hinged to the first upright; and an actuator device securable selectively to two elements of the quadrilateral formed from the first/second uprights and the first/second arms, at least one of the parts of the quadrilateral being provided with elastic means to vary the dimension between the two hinged ends. | 2012-07-05 |
| 20120168702 | RAPID DEPLOYMENT BARRIER - A barrier device capable of rapid deployment and assembly to form a barrier wall. The barrier device comprises wheels so as to be easily transported. The barrier device further comprises connection plates so that adjacent barriers can be connected to one another quickly and without the use of any tools or other components. In one aspect, the invention is the barrier device comprising: base plate structure having a top surface and a bottom surface, the bottom surface of the base plate structure being in a first plane; a wall plate structure connected to and extending upward from the top surface of the base plate structure; and at least one wheel having a tread surface, the at least one wheel positioned so that the tread surface of the wheel is at or above the first plane and at least a portion of the tread surface extends beyond the rear edge of the base plate structure. | 2012-07-05 |
| 20120168703 | BARRIER IMPROVEMENTS - A barrier having an upper elongate support and a lower elongate support, and a two-wire tensioning assembly with two only substantially vertical portions extending between the upper and lower elongate supports, with two wires each attached through a spreader, the spreader having a threaded aperture and a shaft threadably engaging the aperture and being positioned to either directly or indirectly engage a one of the elongate supports, where rotation of the shaft relative to the spreader will effect a change in tensioning of both substantially vertical portions of the wires at the same time. | 2012-07-05 |
| 20120168704 | METHOD OF ETCHING A PROGRAMMABLE MEMORY MICROELECTRONIC DEVICE - A method of etching a programmable memory microelectronic device ( | 2012-07-05 |
| 20120168705 | Bipolar Switching Memory Cell With Built-in "On" State Rectifying Current-Voltage Characteristics - A memory array is disclosed having bipolar current-voltage (IV) resistive random access memory cells with built-in “on” state rectifying IV characteristics. In one embodiment, a bipolar switching resistive random access memory cell may have a metal/solid electrolyte/semiconductor stack that forms a Schottky diode when switched to the “on” state. In another embodiment, a bipolar switching resistive random access memory cell may have a metal/solid electrolyte/tunnel barrier/electrode stack that forms a metal-insulator-metal device when switched to the “on” state. Methods of operating the memory array are also disclosed. | 2012-07-05 |
| 20120168706 | RESISTANCE RANDOM ACCESS MEMORY - The present disclosure relates to a resistance random access memory comprising a first electrode, a thin film layer formed on the first electrode and including a resistance switching layer and a switching layer bonded to each other, and a second electrode formed on the thin film layer, and relates to a method of manufacturing the same. | 2012-07-05 |
| 20120168707 | CARBON NANO-FILM REVERSIBLE RESISTANCE-SWITCHABLE ELEMENTS AND METHODS OF FORMING THE SAME - Methods of forming a microelectronic structure are provided, the microelectronic structure including a first conductor, a discontinuous film of metal nanoparticles disposed on a surface above the first conductor, a carbon nano-film formed atop the surface and the discontinuous film of metal nanoparticles, and a second conductor disposed above the carbon nano-film. Numerous additional aspects are provided. | 2012-07-05 |
| 20120168708 | Memory Device Constructions, Memory Cell Forming Methods, and Semiconductor Construction Forming Methods - Memory device constructions include a first column line extending parallel to a second column line, the first column line being above the second column line; a row line above the second column line and extending perpendicular to the first column line and the second column line; memory material disposed to be selectively and reversibly configured in one of two or more different resistive states; a first diode configured to conduct a first current between the first column line and the row line via the memory material; and a second diode configured to conduct a second current between the second column line and the row line via the memory material. In some embodiments, the first diode is a Schottky diode having a semiconductor anode and a metal cathode and the second diode is a Schottky diode having a metal anode and a semiconductor cathode. | 2012-07-05 |
| 20120168709 | SINGLE MASK ADDER PHASE CHANGE MEMORY ELEMENT - A method of fabricating a phase change memory element within a semiconductor structure includes etching an opening to an upper surface of a bottom electrode, the opening being formed of a height equal to a height of a metal region at a same layer within the semiconductor structure, depositing phase change material within the opening, recessing the phase change material within the opening, and forming a top electrode on the recessed phase change material. | 2012-07-05 |
| 20120168710 | Growth and Transfer of Monolithic Horizontal Nanowire Superstructures onto Flexible Substrates - In a method of making a monolithic elongated nanowire, a mask polymer layer is applied to a selected crystal surface of a seed crystal. A plurality of spaced apart elongated openings is defined through the mask polymer layer, thereby exposing a corresponding plurality of portions of the crystal surface. The openings are disposed so as to be aligned with and parallel to a selected crystal axis of the seed crystal. The portions of the crystal surface are subjected to a chemical nutrient environment that causes crystalline material to grow from the plurality of portions for at least a period of time so that monocrystalline members grow from the elongated openings and until the monocrystalline members laterally expand so that each monocrystalline member grows into and merges with an adjacent one of the monocrystalline members, thereby forming a monolithic elongated nanowire. | 2012-07-05 |
| 20120168711 | Narrow-Waist Nanowire Transistor with Wide Aspect Ratio Ends - A method is provided for forming narrow-waist nanowire (NW) transistors with wide aspect ratio ends. The method provides a semiconductor-on-insulator wafer. The top semiconductor layer is etched to form a first pad, a second pad, and a plurality of narrow-waist semiconductor bridges. Each semiconductor bridge has two ends, each with a first width, attached to the first and second pads, and a mid-section less than the first width. A channel is formed in a center portion of each mid-section, a drain interposed between the channel and the first end, a source interposed between the channel and the second end, and a gate dielectric surrounding the channel and adjacent portions of the source and drain. A gate electrode is formed surrounding the gate dielectric. The semiconductor bridge ends are etched from the first and second pads, forming a plurality of narrow-waist semiconductor NW transistors. | 2012-07-05 |
| 20120168712 | HIGH BRIGHT LIGHT EMITTING DIODE - A high bright LED comprises a substrate, a conductive layer, a first semiconductor layer, a luminous layer, a second semiconductor layer, a first electrode, a second electrode and an insulation structure. The conductive layer, the first semiconductor layer, the luminous layer and the second semiconductor layer are disposed upwards from an upper solder layer of the substrate in order. The first electrode is electrically connected to the conductive layer The second electrode penetrates through the conductive layer, the first semiconductor layer and the luminous layer to make the upper solder and the second semiconductor layer electrically connected. The insulation structure comprises at least two passivation layers peripherally wrapping the second electrode. The thicknesses of the at least two passivation layers are conformed to the distributed Bragg reflection technique to make the passivation layers jointly used as a reflector with high reflectance. | 2012-07-05 |
| 20120168713 | METHOD FOR MANUFACTURING A SILICON NANOWIRE ARRAY USING A POROUS METAL FILM - The present invention is to provide a method for manufacturing a silicon nanowire array comprising (a) preparing a porous metal film; (b) placing the porous metal film in contact with a silicon substrate; and (c) etching the silicon substrate with a silicon etching solution. The present invention allows manufacturing vertically aligned large-area silicon nanowires by using the porous metal film as a catalyst and manufacturing nanowires having a porous structure, a porous nodular structure, an inclined structure and a zig-zag structure, which are distinguishable from nanowires of the prior art in their shape and crystallographic orientation, by adjusting etching conditions such as the composition of the silicon etching solution and the etching temperature in the step in which the silicon substrate is subjected to wet etching. | 2012-07-05 |
| 20120168714 | VERTICAL LIGHT EMITTING DIODE (VLED) DIE AND METHOD OF FABRICATION - A vertical light emitting diode (VLED) die includes a first metal having a first surface and an opposing second surface; a second metal on the second surface of the first metal; a p-type semiconductor layer on the first surface of the first metal; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. | 2012-07-05 |
| 20120168715 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method for manufacturing a semiconductor light emitting device includes: (a) providing a temporary substrate; (b) forming a multi-layered LED epitaxial structure, having at least one light emitting unit, on the temporary substrate, wherein a first surface of the light emitting unit contacts the temporary substrate, and the light emitting unit includes a n-type layer, an active region, and a p-type layer; (c) forming a n-electrode on the n-type layer; (d) forming a p-electrode on the p-type layer; (e) bonding a permanent substrate on the light emitting unit, the n-electrode and the p-electrode; (f) removing the temporary substrate to expose the light emitting unit; and (g) etching the exposed light emitting unit, to expose at least one of the n-electrode and the p-electrode. | 2012-07-05 |
| 20120168716 | Light Emitting Diode (LED) Die Having Stepped Substrates And Method Of Fabrication - A light emitting diode (LED) die includes a first substrate having a first surface and an opposing second surface; a second substrate on the second surface of the first substrate; a p-type semiconductor layer on the first surface of the first substrate; a multiple quantum well (MQW) layer on the p-type semiconductor layer configured to emit light; and an n-type semiconductor layer on the multiple quantum well (MQW) layer. | 2012-07-05 |
| 20120168717 | LIGHT EMITTING DIODE, LIGHT EMITTING DIODE LAMP, AND ILLUMINATING APPARATUS - Disclosed is a light-emitting diode, which has a red and infrared emitting wavelength, excellent monochromatism characteristics, and high output and high efficiency and excellent humidity resistance. The light-emitting diode is provided with: a light-emitting section, which includes an active layer having a quantum well structure and formed by laminating alternately a well layer which comprises a composition expressed by the composition formula of (Al | 2012-07-05 |
| 20120168718 | SEMICONDUCTOR LIGHT EMITTING DEVICE - Disclosed is a semiconductor light emitting device including: a substrate; an n-type semiconductor layer giving an electron when receiving voltage; a p-type semiconductor layer giving a hole when receiving voltage; an active layer provided between the n-type semiconductor layer and the p-type semiconductor layer and including a quantum well structure to facilitate coupling between an electron and a hole; an n-type electrode including conductivity for applying voltage to the n-type semiconductor layer; a p-type electrode including conductivity for applying voltage to the p-type semiconductor layer; and am electric-current diffusion and hole injection layer provided between the p-type semiconductor layer and the p-type electrode and doped with n-type impurities and p-type impurities for diffusing an electric current and injecting a hole between the p-type electrode and the p-type semiconductor layer. With this, ohmic contact is decreased, flow of an electric current is improved, diffusion of the electric current is more uniformized, and injection of a hole is improved between the electrode and the semiconductor layer of the semiconductor light emitting device, thereby maximizing efficiency of a device. | 2012-07-05 |
| 20120168719 | EPITAXIAL SUBSTRATE FOR ELECTRONIC DEVICE, IN WHICH CURRENT FLOWS IN LATERAL DIRECTION AND METHOD OF PRODUCING THE SAME - To provide an epitaxial substrate for electronic devices, in which current flows in a lateral direction, which enables accurate measurement of the sheet resistance of HEMTs without contact, and to provide a method of efficiently producing the epitaxial substrate for electronic devices, the method characteristically includes the steps of forming a barrier layer against impurity diffusion on one surface of a high-resistance Si-single crystal substrate, forming a buffer as an insulating layer on the other surface of the high-resistance Si-single crystal substrate, producing an epitaxial substrate by epitaxially growing a plurality of III-nitride layers on the buffer to form a main laminate, and measuring resistance of the main laminate of the epitaxial substrate without contact. | 2012-07-05 |
| 20120168720 | GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, METHOD OF FABRICATING GROUP III-V COMPOUND SEMICONDUCTOR PHOTO DETECTOR, PHOTO DETECTOR, AND EPITAXIAL WAFER - An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layer | 2012-07-05 |
| 20120168721 | GRAPHENE FORMATION ON DIELECTRICS AND ELECTRONIC DEVICES FORMED THEREFROM - Methods of forming a graphene-based device are provided. According to an embodiment, a graphene-based device can be formed by subjecting a substrate having a dielectric formed thereon to a chemical vapor deposition (CVD) process using a cracked hydrocarbon or a physical vapor deposition (PVD) process using a graphite source; and performing an annealing process. The annealing process can be performed to temperatures of 1000 K or more. The cracked hydrocarbon of the CVD process can be cracked ethylene. In accordance with one embodiment, the application of the cracked ethylene to a MgO(111) surface followed by an annealing under ultra high vacuum conditions can result in a structure on the MgO(111) surface of an ordered graphene film with an oxidized carbon-containing interfacial layer therebetween. In another embodiment, the PVD process can be used to form single or multiple monolayers of graphene. | 2012-07-05 |
| 20120168722 | Graphene Electronic Device Including A Plurality Of Graphene Channel Layers - Graphene electronic devices may include a gate electrode on a substrate, a first gate insulating film covering the gate electrode, a plurality of graphene channel layers on the substrate, a second gate insulating film between the plurality of graphene channel layers, and a source electrode and a drain electrode connected to both edges of each of the plurality of graphene channel layers. | 2012-07-05 |
| 20120168723 | ELECTRONIC DEVICES INCLUDING GRAPHENE AND METHODS OF FORMING THE SAME - Methods of forming a graphene layer are provided. The method includes sequentially forming a seed layer and a protection layer on a substrate, patterning the protection layer and the seed layer to form a protection pattern and a seed pattern having a first length in a first direction and a second length in a second direction perpendicular to the first direction, and forming a graphene material on at least one of both sidewalls of the seed pattern. The second length is greater than the first length. Related devices are also provided. | 2012-07-05 |
| 20120168724 | TRANSFER-FREE BATCH FABRICATION OF SINGLE LAYER GRAPHENE DEVICES - A method of manufacturing one or more graphene devices is disclosed. A thin film growth substrate is formed directly on a device substrate. Graphene is formed on the thin film growth substrate. A transistor is also disclosed, having a device substrate and a source supported by the device substrate. The transistor also has a drain separated from the source and supported by the device substrate. The transistor further has a single layer graphene (SLG) channel grown partially on and coupling the source and the drain. The transistor also has a gate aligned with the SLG channel, and a gate insulator between the gate and the SLG channel. Integrated circuits and other apparati having a device substrate, a thin film growth substrate formed directly on at least a portion of the device substrate, and graphene formed directly on at least a portion of the thin film growth substrate are also disclosed. | 2012-07-05 |
| 20120168725 | ORGANIC ELECTROLUMINESCENT DEVICE - An organic electroluminescent device including a first electrode layer, a second electrode layer, a light emitting layer and a hole injection layer is provided. The light emitting layer is disposed between the first electrode layer and the second electrode layer. The hole injection layer is disposed between the first electrode layer and the light emitting layer, wherein the hole injection layer includes a first material layer and a second material layer. The second material layer is disposed on the first material layer and includes a main material and a doping material, wherein the doping material of the second material layer and a material of the first material layer are substantially the same. | 2012-07-05 |
| 20120168726 | ORGANIC SEMICONDUCTOR COMPOUND, AND TRANSISTOR AND ELECTRONIC DEVICE INCLUDING THE SAME - An example embodiment relates to an organic semiconductor compound, represented by Chemical Formula 1 herein, which may be polymerized and used in transistors and electronic devices. The organic semiconductor compound includes a base structure of four fused benzene rings with functional groups R | 2012-07-05 |
| 20120168727 | LOW BAND-GAP ORGANIC SEMICONDUCTOR COMPOUNDS, AND TRANSISTORS AND ELECTRONIC DEVICES INCLUDING THE SAME - An organic semiconductor compound including a structural unit represented by Chemical Formula 1. | 2012-07-05 |
| 20120168728 | Organic Electronic Devices Prepared Using Decomposable Polymer Additives - A method of fabricating an organic device is provided comprising providing a first solution comprising an organic semiconductor or a precursor thereof; a solvent and a decomposable polymer additive, where the polymer additive is heated so that it decomposes into gas. The method is applicable to large scale fabrication of OLEDs, OPVs and OFET devices. | 2012-07-05 |
| 20120168729 | Organic Semiconductor Compound, And Transistor And Electronic Device Including The Same - An example embodiment relates to an organic semiconductor compound, represented by Chemical Formula 1 herein, which may be polymerized and used in transistors and electronic devices. The organic semiconductor compound includes a base structure of four fused benzene rings with functional groups R | 2012-07-05 |
| 20120168730 | ACRIDINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE DEVICE INCLUDING THE SAME - Disclosed are an acridine derivative and an organic electro-luminescence device including the same. Specifically, the disclosed acridine derivative compound has an aryl moiety or a heteroaryl moiety, linked to an acridine moiety and an amine moiety, and the disclosed organic electro-luminescence device including the acridine derivative compound requires a low operating voltage, shows high efficiency, and is enhanced in life-span. | 2012-07-05 |
| 20120168731 | PHENANTHROAZOLE COMPOUNDS AS HOLE TRANSPORTING MATERIALS FOR ELECTRO LUMINESCENT DEVICES - The present invention relates to electroluminescent devices, comprising a compound of the formula (I) as a component of the transporting/injecting and/or electron blocking layer. The compounds of formula (I) may function alone, or in combination with dopants to provide improved efficiency, driving voltage and/or lifetime of electroluminescent devices. | 2012-07-05 |
| 20120168732 | AMBIPOLAR SMALL MOLECULE HOSTS FOR PHOSPHORESCENT GUEST EMITTERS - The inventions describe disclosed and described herein relate to ambipolar small molecule host materials for guest phosphorescent metal complexes. Methods of making the ambipolar small molecules are also described. These ambipolar small molecules, which comprise both an oxadiazole and one or more carbazole groups, can be used to make the emission layers of unexpectedly efficient OLED devices containing the materials of the inventions, wherein (I) at least one of the R | 2012-07-05 |
| 20120168733 | PYRENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT USING THE SAME - A pyrene derivative represented by the following formula (1), wherein Ar | 2012-07-05 |
| 20120168734 | COMPOUND CONTAINING 5-MEMBERED HETEROCYCLES, ORGANIC LIGHT-EMITTING DEVICE USING SAME, AND TERMINAL COMPRISING THE LATTER - Disclosed are a compound including 5-membered heterocycles, an organic electronic device using the same, and a terminal including the latter. | 2012-07-05 |
| 20120168735 | ORGANIC ELECTROLUMINESCENT DEVICE - The present invention relates to organic electroluminescent devices which comprise a thick electron-transport layer between the emitting layer and the cathode. | 2012-07-05 |
| 20120168736 | NOVEL PYRENE COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE INCLUDING THE SAME - A pyrene compound represented by general formula (1):
| 2012-07-05 |
| 20120168737 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device includes an anode, a cathode, and an organic compound layer including at least a light-emitting sublayer and being arranged between the anode and the cathode, the light-emitting sublayer containing a host serving as a main component, a first dopant, and a second dopant, in which for the host, the first dopant, and the second dopant, the following relationships (a) to (c) hold, whereby only the second dopant emits light:
| 2012-07-05 |
| 20120168738 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - Light-emitting elements in which an increase of driving voltage can be suppressed are provided. Light-emitting devices whose power consumption is reduced by including such light-emitting elements are also provided. In a light-emitting element having an EL layer between an anode and a cathode, a first layer in which carriers can be produced is formed between the cathode and the EL layer and in contact with the cathode, a second layer which transfers electrons produced in the first layer is formed in contact with the first layer, and a third layer which injects the electrons received from the second layer into the EL layer is formed in contact with the second layer. | 2012-07-05 |
| 20120168739 | FLUORENE COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE - Provided is a novel fluorene compound, which is represented by the following general formula (1): | 2012-07-05 |
| 20120168740 | ORGANIC ELECTROLUMINESCENCE ELEMENT - In an organic electroluminescence device having a pair of electrodes and an organic medium which has a light emitting layer or a plurality of layers including the light emitting layer, contains a light emitting material formed with an organometallic complex compound having a heavy metal and is disposed between the pair of electrodes, the organic medium contains an amine derivative having a specific structure. The organic electroluminescence device exhibits a high efficiency of light emission even at a high luminance of several thousand cd/m | 2012-07-05 |
| 20120168741 | Stilbene Derivatives, Light-Emitting Element, Display Device, and Electronic Device - A novel stilbene derivative is provided with motivation of providing a blue emissive material showing excellent color purity. The use of the stilbene derivative of the present invention allows the fabrication of a blue-emissive light-emitting element with excellent color purity. The invention also includes an electronic device equipped with a display portion in which the stilbene derivative is employed. The stilbene derivative of the present invention is represented by formula (1), in which Ar | 2012-07-05 |
| 20120168742 | BARIUM COPPER SULFUR FLUORIDE TRANSPARENT CONDUCTIVE THIN FILMS AND BULK MATERIAL - A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu | 2012-07-05 |
| 20120168743 | THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF - A thin film transistor (TFT) including a gate, a gate insulator, an oxide semiconductor channel layer, a source, and a drain is provided. The gate insulator covers the gate, while the oxide semiconductor channel layer is configured on the gate insulator and located above the gate. The oxide semiconductor channel layer includes a first sub-layer and a second sub-layer located on the first sub-layer. An oxygen content of the first sub-layer is lower than an oxygen content of the second sub-layer. The source and the drain are configured on a portion of the second sub-layer. In addition, a fabricating method of the above-mentioned TFT is also provided. | 2012-07-05 |
| 20120168744 | SELF-ALIGNED METAL OXIDE TFT WITH REDUCED NUMBER OF MASKS - A method of fabricating MO TFTs on transparent substrates by positioning opaque gate metal on the front surface of the substrate defining a gate area, depositing gate dielectric material on the front surface of the substrate, overlying the gate metal and a surrounding area, and depositing metal oxide semiconductor material on the gate dielectric material. Depositing etch stop material on the semiconductor material. Positioning photoresist on the etch stop material, the etch stop material and the photoresist being selectively removable, and the photoresist defining an isolation area in the semiconductor material. Removing uncovered portions of the etch stop. Exposing the photoresist from the rear surface of the substrate using the gate metal as a mask and removing exposed portions so as to leave the etch stop material uncovered except for a portion overlying and aligned with the gate metal. Etching uncovered portions of the semiconductor material to isolate the TFT. Using the photoresist, selectively etching the etch stop layer to leave a portion overlying and aligned with the gate metal and defining a channel area in the semiconductor material. Depositing and patterning conductive material on the etch stop layer and on the semiconductor material to form source and drain areas on opposed sides of the channel area. | 2012-07-05 |
| 20120168745 | Photosensor and Method of Manufacturing the Same - In a photosensor and a method of manufacturing the same, the photosensor comprises: an intrinsic silicon layer formed on a substrate; a P-type doped region formed in a same plane with the intrinsic silicon layer; and an oxide semiconductor layer formed on or under the intrinsic silicon layer, and overlapping an entire region of the intrinsic silicon layer. | 2012-07-05 |
| 20120168746 | THIN FILM TRANSISTOR SUSBTRATE INCLUDING OXIDE SEMICONDUCTOR - The present disclosure relates to a thin film transistor substrate for flat panel display device including oxide semiconductor. The present disclosure suggests a thin film transistor substrate for flat panel display device comprising: a transparent substrate; a thin film transistor layer having an oxide semiconductor material disposed on the transparent substrate; a passivation layer disposed on the whole surface of the thin film transistor layer; a pixel electrode formed on the passivation layer and contact the thin film transistor layer through a contact hole formed at the passivation layer; and a first ultra violet light absorbing layer disposed on the whole surface of the pixel electrode. Absorbing all of ultra violet light and passing all of the visible light, the photo-thermal characteristic is enhanced and the transparency property is not degraded. | 2012-07-05 |
| 20120168747 | COMPOSITION FOR OXIDE THIN FILM, PREPARATION METHOD OF THE COMPOSITION, METHODS FOR FORMING THE OXIDE THIN FILM USING THE COMPOSITION, AND ELECTRONIC DEVICE USING THE COMPOSITION - Provided are a composition for an oxide semiconductor, a preparation method of the composition, a method for forming an oxide semiconductor thin film using the composition, and a method for forming an electronic device using the composition. The composition for an oxide semiconductor includes a compound for an oxide thin film and a stabilizer for adjusting conductivity of the oxide thin film. The stabilizer is included with the mole number of two to twelve times larger than the total mole number of the compound. | 2012-07-05 |
| 20120168748 | SEMICONDUCTOR DEVICE, POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, PROCESS FOR PRODUCING POLYCRYSTALLINE SEMICONDUCTOR THIN FILM, FIELD EFFECT TRANSISTOR, AND PROCESS FOR PRODUCING FIELD EFFECT TRANSISTOR - An object of the present invention is to provide a novel semiconductor device which is excellent in stability, uniformity, reproducibility, heat resistance, durability and the like, and can exert excellent transistor properties. The semiconductor device is a thin-film transistor, and this thin-film transistor uses, as an active layer, a polycrystalline oxide semiconductor thin film containing In and two or more metals other than In and having an electron carrier concentration of less than 1×10 | 2012-07-05 |
| 20120168749 | DISPLAY APPARATUS USING OXIDE SEMICONDUCTOR AND PRODUCTION THEREOF - A transistor includes a source terminal and a drain terminal, an active layer including an oxide containing In, a gate electrode, and a gate insulating layer between the gate electrode and the active layer. At least a part of the active layer is amorphous, and an electric current flowing between the source terminal and the drain terminal of the transistor is less than 10 μA when the transistor is in an off state. In addition, the gate insulating layer contains hydrogen in an amount of less than 3×10 | 2012-07-05 |
| 20120168750 | BOTTOM GATE TYPE THIN FILM TRANSISTOR, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS - Provided is a bottom gate type thin film transistor including on a substrate ( | 2012-07-05 |
| 20120168751 | Integrated Circuit Test Units with Integrated Physical and Electrical Test Regions - A device includes a test unit in a die. The test unit includes a physical test region including an active region, and a plurality of conductive lines over the active region and parallel to each other. The plurality of conductive lines has substantially a uniform spacing, wherein no contact plugs are directly over and connected to the plurality of conductive lines. The test unit further includes an electrical test region including a transistor having a gate formed of a same material, and at a same level, as the plurality of conductive lines; and contact plugs connected to a source, a drain, and the gate of the transistor. The test unit further includes an alignment mark adjacent the physical test region and the electrical test region. | 2012-07-05 |
| 20120168752 | TESTKEY STRUCTURE, CHIP PACKAGING STRUCTURE, AND METHOD FOR FABRICATING THE SAME - The invention provides a testkey structure for testing a chip. The testkey structure includes a metal pad and a first groove, wherein the first groove is disposed on the metal pad. The first groove is located between a first signal lead and a second signal lead of the chip. According to the first groove, the first signal lead and the second signal lead could be separated from each other to prevent the first signal lead and the second signal lead from shorting. | 2012-07-05 |
| 20120168753 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DIODE - In a nitride semiconductor light emitting diode including a substrate made of a nitride semiconductor, a first conductive-type nitride semiconductor layer formed on the substrate, an active layer made of a nitride semiconductor, and a second conductive-type nitride semiconductor layer, characterized in that light emitted is extracted from the under surface side of the substrate or the upper surface side of the second conductive-type nitride semiconductor layer, an intermediate layer is formed between the substrate and the active layer, and dislocations is allowed to generates from the dislocation generating layer as the origin and to distribute in a light emitting region of the active layer. | 2012-07-05 |
| 20120168754 | THIN FILM METAL-DIELECTRIC-METAL TRANSISTOR - A transistor is formed having a thin film metal channel region. The transistor may be formed at the surface of a semiconductor substrate, an insulating substrate, or between dielectric layers above a substrate. A plurality of transistors each having a thin film metal channel region may be formed. Multiple arrays of such transistors can be vertically stacked in a same device. | 2012-07-05 |
| 20120168755 | Transparent Electrode and Organic Light Emitting Diode Device Including the Transparent Electrode and Method of Manufacturing the Same - Disclosed are a transparent electrode including a first light-transmission layer, a metal layer, and a second light-transmission layer sequentially formed, an organic light emitting device including the transparent electrode, and a method of manufacturing the same. The second light-transmission layer includes a conductive oxide and a metal catalyst. | 2012-07-05 |
| 20120168756 | Transistor, Method Of Manufacturing The Same, And Electronic Device Including The Transistor - Transistors, methods of manufacturing the same, and electronic devices including the transistors. The transistor may include a light blocking member which surrounds at least a portion of the channel layer. The light blocking member may be designed to block light laterally incident from a side of the transistor toward the channel layer (that is, laterally incident light). The light blocking member may be disposed in a portion of a gate insulation layer outside the channel layer. The light blocking member may be connected to a source and a drain or may be connected to a gate. The light blocking member may be separated from the source, the drain and the gate. The light blocking member may completely surround the channel layer. | 2012-07-05 |
| 20120168757 | Transistors, Methods Of Manufacturing The Same And Electronic Devices Including Transistors - A transistor includes a channel layer disposed above a gate and including an oxide semiconductor. A source electrode contacts a first end portion of the channel layer, and a drain electrode contacts a second end portion of the channel layer. The channel layer further includes a fluorine-containing region formed in an upper portion of the channel layer between the source electrode and the drain electrode. | 2012-07-05 |
| 20120168758 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE ORGANIC LIGHT EMITTING DISPLAY APPARATUS - An organic light emitting display apparatus includes a substrate; a thin film transistor which is disposed over the substrate; a first electrode which is disposed over the substrate and electrically connected to the thin film transistor; a passivation layer which covers the thin film transistor and contacts a predetermined region of an upper surface of the first electrode; an intermediate layer which is disposed over the first electrode, includes an organic emission layer, and contacts a predetermined region of the passivation layer; and a second electrode which is disposed over the intermediate layer. | 2012-07-05 |
| 20120168759 | X-RAY DETECTION DEVICE - An X-ray detection device includes a gate electrode and a lower electrode on a substrate and laterally spaced from each other, a dielectric layer covering the gate electrode and the lower electrode, and a conductive pattern on the dielectric layer at a side of the gate electrode adjacent to the lower electrode and overlapping the lower electrode. The device also includes a source electrode spaced apart from the conductive pattern that is on the dielectric layer at the other side of the gate electrode, and an interlayer insulation layer covering the conductive pattern and the source electrode. A collector electrode, a photoelectric conversion layer, and a bias electrode are sequentially stacked on the interlayer insulation layer. | 2012-07-05 |
| 20120168760 | TRANSFLECTIVE TFT-LCD AND METHOD FOR MANUFACTURING THE SAME - Embodiments of the disclosed technology provide a transflective transistor thin film array substrate and a method for manufacturing the same. The transflective thin film transistor array substrate, comprising pixel units defined by gate lines and data lines, and each pixel unit comprises a thin film transistor and a common electrode and is divided into a reflective region and a transmissive region. The reflective region comprises a reflective electrode and a second pixel electrode of the reflective region, the transmissive region comprises first and second pixel electrodes of the transmissive region, and the second pixel electrode of the reflective region and the first and second pixel electrodes of the transmissive region are provided in one pixel electrode layer. | 2012-07-05 |
| 20120168761 | ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE AND METHOD FOR MANUFACTURING THE SAME - Disclosed are an active matrix organic light emitting diode and a method for manufacturing the same. The active matrix organic light emitting diode includes: a substrate; a black matrix formed above a part of the substrate; at least one thin film transistor formed above the black matrix; a passivation film formed to entirely cover the at least one thin film transistor; a planarizing layer formed above the passivation film; a color filter formed above an upper part of the planarizing layer opposite to the position where the at least one thin film transistor is formed; and an organic light emitting diode formed above the color filter. | 2012-07-05 |
| 20120168762 | ACTIVE MATRIX SUBSTRATE AND ACTIVE MATRIX DISPLAY DEVICE - A second stem wires ( | 2012-07-05 |
| 20120168763 | Semiconductor Device and Method for Fabricating the Same - The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT. | 2012-07-05 |
| 20120168764 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting display device and a method for manufacturing the same are provided. The organic light emitting display device includes a substrate including a capacitor region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer of the capacitor region, a gate insulation film formed on the semiconductor layer, and a transparent electrode formed on the gate insulation film of the capacitor region, wherein a cross-sectional width of the transparent electrode is smaller than a width of the semiconductor layer. | 2012-07-05 |
| 20120168765 | Flexible Substrate and Display Device Including the Flexible Substrate - A flexible substrate for a display device comprises a polymer resin, an inorganic fiber material, and an antistatic agent, and has a surface resistivity of less than 10 | 2012-07-05 |
| 20120168766 | LATERAL EXTENDED DRAIN METAL OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTOR (LEDMOSFET) WITH TAPERED DIELECTRIC PLATES TO ACHIEVE A HIGH DRAIN-TO-BODY BREAKDOWN VOLTAGE, A METHOD OF FORMING THE TRANSISTOR AND A PROGRAM STORAGE DEVICE FOR DESIGNING THE TRANSISTOR - A lateral, extended drain, metal oxide semiconductor, field effect transistor (LEDMOSFET) with a high drain-to-body breakdown voltage (Vb) incorporates gate structure extensions on opposing sides of a drain drift region. The extensions are tapered such that a distance between each extension and the drift region increases linearly from one end adjacent to the channel region to another end adjacent to the drain region. In one embodiment, these extensions can extend vertically through the isolation region that surrounds the LEDMOSFET. In another embodiment, the extensions can sit atop the isolation region. In either case, the extensions create a strong essentially uniform horizontal electric field profile within the drain drift. Also disclosed are a method for forming the LEDMOSFET with a specific Vb by defining the dimensions of the extensions and a program storage device for designing the LEDMOSFET to have a specific Vb. | 2012-07-05 |
| 20120168767 | SEMICONDUCTOR DEVICE - A semiconductor device includes a plurality of floating regions, an insulating layer and a capacitance forming portion. The plurality of floating regions are arranged on a surface of a semiconductor substrate in a row, wherein the plurality of floating regions are provided with insulating regions therebetween. The plurality of floating regions include a first floating region and a second floating region. The second floating region is located farther than the first floating region from an island region of a predetermined potential on the semiconductor substrate. The insulating layer is interposed between each of the plurality of floating regions and a semiconductor material layer of the semiconductor substrate. The capacitance forming portion forms an external capacitance in parallel with the capacitance of the insulating region between the first floating region and the island region of the predetermined potential. | 2012-07-05 |
| 20120168768 | SEMICONDUCTOR STRUCTURES AND METHOD FOR FABRICATING THE SAME - A semiconductor structure is provided. The semiconductor structure includes: a substrate; one or more semiconductor device layers formed on the substrate; and one or more lattice breaking areas formed on the surface of the substrate between the semiconductor device layers. The invention also provides a method for fabricating a semiconductor structure. | 2012-07-05 |
| 20120168769 | METHOD OF MANUFACTURING LIGHT EMITTING DIODE AND LIGHT EMITTING DIODE MANUFACTURED THEREBY - There is provided a method of manufacturing a light emitting diode and a light emitting diode manufactured by the same. The method includes growing a first conductivity type nitride semiconductor layer and an undoped nitride semiconductor layer on a substrate sequentially in a first reaction chamber; transferring the substrate having the first conductivity type nitride semiconductor layer and the undoped nitride semiconductor layer grown thereon to a second reaction chamber; growing an additional first conductivity type nitride semiconductor layer on the undoped nitride semiconductor layer in the second reaction chamber; growing an active layer on the additional first conductivity type nitride semiconductor layer; and growing a second conductivity type nitride semiconductor layer on the active layer. | 2012-07-05 |
