27th week of 2014 patent applcation highlights part 15 |
Patent application number | Title | Published |
20140183440 | VARIABLE RESISTANCE MEMORY DEVICE - A variable resistance memory device includes a plurality of cell blocks each of which includes a plurality of first lines extending in parallel to each other along a first direction, a plurality of second lines extending in parallel to each other along a second direction crossing the first direction, and a plurality of memory cells including variable resistance layers arranged at intersections of the plurality of first lines and the plurality of second lines and a plurality of selection units coupled to the plurality of first lines and coupling two neighboring cell blocks. | 2014-07-03 |
20140183441 | APPARATUS FOR GENERATING/DETECTING TERAHERTZ WAVE USING GRAPHENE AND MANUFACTURING METHOD OF THE SAME - Provided is a terahertz wave generating/detecting apparatus and a method for manufacturing the same. The terahertz wave generating/detecting apparatus includes; a substrate having an active region and a transmitting region; a lower metal layer extending in a first direction on the active region and the transmitting region of the substrate; a graphene layer disposed on the lower metal layer on the active region; and upper metal layers extending in the first direction on the graphene layer of the active region and the substrate in the transmission region, wherein a terahertz wave is generated or amplified by a surface plasmon polariton that is induced on a boundary surface between the graphene layer and the lower metal layer by beated laser light applied to the graphene layer and the metal layer. | 2014-07-03 |
20140183442 | ENGINEERED SUBSTRATE ASSEMBLIES WITH EPITAXIAL TEMPLATES AND RELATED SYSTEMS, METHODS, AND DEVICES - Engineered substrates having epitaxial templates for forming epitaxial semiconductor materials and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a first semiconductor material at a front surface of a donor substrate. The first semiconductor material is transferred to first handle substrate to define a first formation structure. A second formation structure is formed to further include a second semiconductor material homoepitaxial to the first formation structure. The method can further include transferring the first portion of the second formation structure to a second handle substrate such that a second portion of the second formation structure remains at the first handle substrate. | 2014-07-03 |
20140183443 | ENGINEERED SUBSTRATES HAVING EPITAXIAL FORMATION STRUCTURES WITH ENHANCED SHEAR STRENGTH AND ASSOCIATED SYSTEMS AND METHODS - Engineered substrates having epitaxial formation structures with enhanced shear strength and associated systems and methods are disclosed herein. In several embodiments, for example, an engineered substrate can be manufactured by forming a shear strength enhancement material at a front surface of a donor substrate and implanting ions a depth into the donor substrate through the shear strength enhancement material. The ion implantation can form a doped portion in the donor substrate that defines an epitaxial formation structure. The method can further include transferring the epitaxial formation structure from the donor substrate to a front surface of a handle substrate. The shear strength enhancement material can be positioned between the epitaxial formation structure and the front surface of the handle substrate and bridge defects in the front surface of the handle substrate. | 2014-07-03 |
20140183444 | HIGH-VOLTAGE FLIP-CHIP LED STRUCTURE AND MANUFACTURING METHOD THEREOF - A high-voltage flip-chip LED structure and a manufacturing method thereof are disclosed. The manufacturing method includes: providing a die substrate, depositing a first passivation layer, forming a co-electrical-connecting layer, depositing a second passivation layer, depositing a mirror layer, forming two conductive tunnels by etching, and providing two connecting metal layers. The die substrate includes a sapphire substrate and multiple LED chips thereon. The fully transparent co-electrical-connecting layer, formed after formation of the first passivation layer, electrically connects the LED chips in series. The outer surface of the deposited second passivation layer is a flat passivation surface that enables the mirror layer thereon to be level and reflect light without optical path difference. The two connecting metal layers are provided for electrical conduction. The high-voltage flip-chip LED structure thus formed has fully transparent electrodes and can output light without optical path difference. | 2014-07-03 |
20140183445 | LIGHT EMITTING DIODE CHIP AND METHOD FOR MANUFACTURING THE SAME - An LED package includes a substrate, a buffer layer formed on the substrate, an epitaxial structure formed on the buffer layer, and a plurality of carbon nanotube bundles formed in the epitaxial structure. | 2014-07-03 |
20140183446 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING DEVICE - According to one embodiment, a semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and a light emitting layer. The p-type semiconductor layer includes a first p-side layer, a second p-side layer, and a third p-side layer. A concentration profile of Mg of a p-side region includes a first portion, a second portion, a third portion, a fourth portion, a fifth portion, a sixth portion and a seventh portion. The p-side region includes the light emitting layer, the second p-side layer, and the third p-side layer. A Mg concentration of the sixth portion is not less than 1×10 | 2014-07-03 |
20140183447 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes an n-type semiconductor layer including a nitride semiconductor, a p-type semiconductor layer and a light emitting layer. The p-type semiconductor layer includes a first p-side layer of Al | 2014-07-03 |
20140183448 | VERTICAL LIGHT EMITTING DIODE WITH PHOTONIC NANOSTRUCTURES AND METHOD OF FABRICATION THEREOF - There is provided a method of fabricating a vertical light emitting diode which includes forming a light emitting diode structure. Forming the light emitting diode structure includes: forming a first material layer of a first conductivity type, forming a second material layer of a second conductivity type, forming a light emitting layer between the first material layer and the second material layer, and forming a plurality of generally ordered photonic nanostructures at a surface of the first material layer through which light generated from the light emitting layer is emitted for enhancing light extraction efficiency of the vertical light emitting diode. In particular, forming a plurality of generally ordered photonic nanostructures includes forming a self-assembled template including generally ordered nanoparticles on the surface of the first material layer to function as a mask for forming the photonic nanostructures at said surface of the first material layer. There is also provided a vertical light emitting diode with the self-assembly derived ordered nanoparticles. | 2014-07-03 |
20140183449 | Nitride Semiconductor Light Emitting Device and Fabrication Method Thereof - Provided is a nitride semiconductor light emitting device including: a first nitride semiconductor layer; an active layer formed above the first nitride semiconductor layer; and a delta doped second nitride semiconductor layer formed above the active layer. According to the present invention, the optical power of the nitride semiconductor light emitting device is enhanced, optical power down phenomenon is improved and reliability against ESD (electro static discharge) is enhanced. | 2014-07-03 |
20140183450 | CATALYST FREE SYNTHESIS OF VERTICALLY ALIGNED CNTs ON SiNW ARRAYS - The present invention discloses novel one dimensional, direct nano-heterojunctions of vertically aligned silicon nanowires (SiNW)-carbon nano tube (CNT) arrays with ultra-low turn-on field useful in single electronic devices. The invention further discloses catalyst free chemical vapor deposition (CVD) route for synthesis of one dimensional, direct nano-heterojunctions of vertically aligned SiNW-CNT arrays. | 2014-07-03 |
20140183451 | FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED TO REDUCE LEAKAGE CURRENT AND METHOD OF FABRICATION - A semiconductor device includes a channel structure formed on a substrate, the channel structure being formed of a semiconductor material. A gate structure covers at least a portion of the surface of the channel structure and is formed of a film of insulation material and a gate electrode. A source structure is connected to one end of the channel structure, and a drain structure is connected to the other end of the channel structure. The channel structure has a non-uniform composition, in a cross-sectional view, that provides a reduction of a leakage current of the semiconductor device relative to a leakage current that would result from a uniform composition | 2014-07-03 |
20140183452 | FIELD EFFECT TRANSISTOR WITH CHANNEL CORE MODIFIED FOR A BACKGATE BIAS AND METHOD OF FABRICATION - A semiconductor device includes a substrate and a source structure and a drain structure formed on the substrate. At least one nanowire structure interconnects the source structure and drain structure and serves as a channel therebetween. A gate structure is formed over said at least one nanowire structure to provide a control of a conductivity of carriers in the channel, and the nanowire structure includes a center core serving as a backbias electrode for the channel. | 2014-07-03 |
20140183453 | FIELD EFFECT TRANSISTOR HAVING DOUBLE TRANSITION METAL DICHALCOGENIDE CHANNELS - A field effect transistor (FET) includes first and second channels stacked on a substrate, the first and second channels formed of a transition metal dichalcogenide, a source electrode and a drain electrode contacting both the first channel and the second channel, each of the source electrode and the drain electrode having one end between the first channel and the second channel, and a first gate electrode corresponding to at least one of the first channel and the second channel. | 2014-07-03 |
20140183454 | EXTENDED ISOINDIGO POLYMERS AND SEMICONDUCTOR COMPOSITIONS - An extended isoindigo polymer of Formula (I), below, is provided. | 2014-07-03 |
20140183455 | PECHMANN DYE BASED POLYMERS AND SEMICONDUCTOR COMPOSITIONS - A Pechmann dye based polymer of formula 1, below, is provided. | 2014-07-03 |
20140183456 | BLUE LIGHT-EMITTING IRIDIUM COMPLEX AND APPLICATION FOR ORGANIC LIGHT EMITTING DIODE - An iridium complex is represented the following formula: | 2014-07-03 |
20140183457 | Transistor with Organic Semiconductor Interface - A method is provided for preparing an interface surface for the deposition of an organic semiconductor material, in the fabrication of an organic thin film transistor (OTFT). A substrate is provided and a gate electrode is formed overlying the substrate. A gate dielectric is formed overlying the gate electrode. Then, source (S) and drain (D) electrodes are formed overlying the gate dielectric, exposing a gate dielectric channel interface region between the S/D electrodes. Subsequent to exposing the OTFT to a H | 2014-07-03 |
20140183458 | ORGANIC LIGHT-EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - In an aspect, an organic light-emitting display apparatus is provided, including a display substrate; a sealing substrate configured to face the display substrate; a sealing material for bonding the display substrate and the sealing substrate and surrounding a circumference of the display unit; and a bonding layer comprising a plurality of through holes, wherein the plurality of through holes comprise partition walls therein. | 2014-07-03 |
20140183459 | ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device includes: a first electrode disposed on a substrate; a pixel defining layer disposed on the substrate e and patterned so that at least a portion of the first electrode is exposed in a light emitting region; a hole injection layer disposed over the pixel defining layer and the at least a portion of the first electrode exposed in the light emitting region; an organic thin film layer disposed over the hole injection layer; an electron injection layer disposed over the organic thin film layer; and a second electrode disposed on the electron injection layer, the second electrode having an opening configured to expose the electron injection layer in the light emitting region. The organic light emitting device may be implemented in a display device having excellent color-reproduction, when applied to the display device using white light as a light source and the large area display device. | 2014-07-03 |
20140183460 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is an OLED display device. The OLED display device includes a substrate in which a plurality of pixels are defined, a thin film transistor formed in each of the pixels defined in the substrate, a passivation layer formed on the thin film transistor, a planarizing layer formed on the passivation layer and including a groove formed in an upper end portion of each pixel, a reflective electrode formed in the groove of the planarizing layer, an anode electrode formed on the reflective electrode, an organic emitting layer formed on the anode electrode, and a cathode electrode formed on the organic emitting layer. | 2014-07-03 |
20140183461 | ORGANIC LIGHT EMITTING DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display panel includes a first pixel and a second pixel respectively disposed in first and second light emitting areas. A portion of a first hole transport layer and a portion of a first light emitting layer of the first pixel are disposed in the second light emitting area. The portions of the first hole transport layer and the first light emitting layer overlap a second hole transport layer and a second light emitting layer, which are successively stacked. The second hole transport layer and the second light emitting layer block holes and electrons from moving to the portion of the first light emitting layer. | 2014-07-03 |
20140183462 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - An organic light emitting display device, including: a substrate; a display unit formed on the substrate; and an encapsulation layer formed on the display unit, in which the encapsulation layer includes a lower layer formed on the display unit, at least one pattern layer formed on the lower layer, and an upper layer formed on the pattern layer, and the lower layer includes at least one of an inorganic film and an organic film, and the pattern layer includes an uneven pattern having a plurality of protrusions which are spaced apart from each other, formed on the lower layer, and a filling layer disposed on the uneven pattern, and the upper layer includes at least one of an inorganic film and an organic film. | 2014-07-03 |
20140183463 | CONDENSED CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE SAME - A condensed cyclic compound is represented by Formula 1, and an organic light-emitting device includes the condensed cyclic compound. | 2014-07-03 |
20140183464 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An OLED display device includes a substrate; pixel regions defined by gate and data lines, each pixel region including red, green, first blue and second blue sub-pixels; a TFT in each pixel region; a first electrode connected to the thin film transistor; an insulating layer exposing the first electrode; hole injecting and hole transporting layers stacked on the first electrode; red, green and blue emitting layer on the hole transporting layer, the red and green emitting layers respectively being in the red and green sub-pixels, and the blue emitting layer being in the first and second blue sub-pixels; electron transporting and electron injecting layers stacked on the red, green and blue emitting layers; and a second electrode on the insulating layer and the electron injecting layer, wherein the first electrode in the second blue sub-pixel has a multi-layered structure of the first electrode layer and at least one metal layer. | 2014-07-03 |
20140183465 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS - Provided is an organic light emitting display apparatus. The organic light emitting display apparatus includes: a substrate; a display unit disposed on the substrate; an encapsulation layer covering the display unit; an integrated circuit device disposed on an outer portion of the display unit on the substrate; and a transparent protection unit (window) disposed on the encapsulation layer and separated from the integrated circuit device. | 2014-07-03 |
20140183466 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting diode (OLED) is provided. The OLED comprises a substrate, a first electrode on the substrate, a second electrode disposed opposite to the first electrode, an emission layer disposed between the first electrode and the second electrode, a hole migration region disposed between the first electrode and the emission layer, and an electron migration region disposed between the emission layer and the second electrode. The hole migration region comprises a tertiary amine having one N-substituent comprising a substituted or unsubstituted carbazole moiety and another N-substituent comprising a substituted or unsubstituted fluorene moiety. At least one of the hole migration region and the emission layer comprises a substituted or unsubstituted compound comprising at least two carbazole moieties. | 2014-07-03 |
20140183467 | ORGANOMETALLIC COMPOUND AND ORGANIC LIGHT-EMITTING DIODE COMPRISING THE SAME - An organometallic compound and an organic light-emitting diode (OLED) including the organometallic compound are provided. In exemplary embodiments, the organometallic compound is a platinum complex comprising one or two heterocyclic ligands, the heterocyclic ligands being the same or different if they are two in number, each heterocyclic ligand comprising two nitrogen heterocyclic rings connected by a single bond, one of the rings being six membered and comprising at least one nitrogen and the other ring being a 1,2-diazole or a 1,2,4-triazole ring. One or two other organic ligands may be attached to the central platinum atom in the complex. OLEDs including one of the subject platinum compounds in a light emission layer exhibit lower driving voltages, higher luminances, higher efficiencies and longer lifetimes than do comparative OLEDs built with established dopants incorporated into the light emitting layers. | 2014-07-03 |
20140183468 | PYRENE-BASED COMPOUND AND ORGANIC LIGHT-EMITTING DIODE COMPRISING THE SAME - A pyrene-based compound and an organic light-emitting diode including the pyrene-based compound are provided. The pyrene-based compound of Formula 1 above may emit blue light having high color purity. For example, an organic light-emitting diode including the pyrene-based compounds of the invention may emit blue light having a y coordinate with a color purity of 0.1 or less, for example, a color purity of 0.09 or less, which is near to the NTSC or sRGB specification. A thin film including the pyrene-based compounds of the invention may be highly amorphous, and thus may have improved electrical stability. Accordingly, an organic light-emitting diode including the pyrene-based compounds of the invention may have improved lifetime characteristics. | 2014-07-03 |
20140183469 | ORGANIC LIGHT-EMITTING COMPOSITION, DEVICE AND METHOD - A light-emitting composition comprising a mixture of a fluorescent light-emitting material a triplet-accepting copolymer comprising a triplet-accepting repeat unit and a repeat unit of formula (I): | 2014-07-03 |
20140183470 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - An organic light emitting diode (OLED) display device including a base substrate having a display area and a non-display area; OLEDs formed in corresponding sub-pixel regions defined by a bank insulating film in the display area of the base substrate; a pad part formed in the non-display area of the base substrate and configured to apply a driving signal to the OLEDs; a plurality of passivation films formed in the display area to cover the OLEDs, the plurality of passivation films including a first inorganic film, an organic film, and a second inorganic film, the plurality of passivation films being sequentially stacked. A region of an edge of the organic film that corresponds to a wire through which the driving signal is applied to the OLEDs from the pad part includes at least one groove formed at an inside area of the organic film. | 2014-07-03 |
20140183471 | ORGANIC LIGHT EMITTING ELEMENT, ORGANIC LIGHT EMITTING DISPLAY DEVICE, AND METHOD OF MANUFACTURING THE ORGANIC LIGHT EMITTING DISPLAY DEVICE - A white organic light emitting element, a white organic light emitting display device, and a method of manufacturing the white organic light emitting element are provided. The organic light emitting element includes a multi-layered emission layer structure. The multi-layered emission layer structure includes a first electroluminescent layer and a second electroluminescent layer that are arranged to overlap at first area of the white organic light emitting element. The lights from the first and second electroluminescent layers collectively form white light. Among the first and second electroluminescent layers, one of the EL layers is extended out to the second area of the white organic light emitting element. A plurality of color filter elements are used to filter the white light to generate colored lights at the corresponding sub pixel regions. | 2014-07-03 |
20140183472 | TRANSPARENT ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A transparent organic light emitting display device and a method of manufacturing the transparent organic light emitting display device are provided. The transparent organic light emitting display device comprises a plurality of sub pixel regions, each having a emissive area and a transmissive area, a thin film transistor disposed in the emissive area, and an organic light emitting element electrically connected to the thin film transistor. While the emissive area emits light to display image on the display device, the transmissive area allows the external light to be passed through the display device so that objects behind the display device can be viewed simultaneously with the displayed image. | 2014-07-03 |
20140183473 | FLEXIBLE DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A flexible display device and a method of manufacturing the same are provided. The flexible display device comprises a first flexible substrate including a display area including an organic light emitting layer, and a peripheral circuit area, and a second flexible substrate coming in contact with the first flexible substrate and including a pattern for facilitating bending thereof, wherein the second flexible substrate has a certain shape according to the pattern, and the first flexible substrate has a shape corresponding to the certain shape. Various embodiments of the present invention provide a flexible display device capable of realizing a narrow bezel-type or bezel-free display device and simultaneously realizing improved types of design, facilitating bending of a bezel area so as to realize a narrow bezel-type or bezel-free display device, and minimizing damage to an area to be bent. | 2014-07-03 |
20140183474 | ORGANIC LIGHT EMITTING DEVICE - An organic light emitting device comprises a first substrate; a thin film transistor layer provided on the first substrate; a light emitting diode layer provided on the thin film transistor layer; and a passivation layer provided on the light emitting diode layer, the passivation layer including a first inorganic insulating film and a second inorganic insulating film, wherein a content of H contained in the first inorganic insulating film is smaller than that of H contained in the second inorganic insulating film. | 2014-07-03 |
20140183475 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device includes a first electrode and a second electrode disposed on a substrate opposite to each other, a first stack including a hole injection layer, a first hole transport layer, a first light emitting layer, and a first electron transport layer sequentially stacked on the first electrode, a second stack including a second hole transport layer, a second light emitting layer, and a second electron transport layer sequentially stacked between the first stack and the second electrode, and a charge generation layer disposed between the first stack and the second stack and including an N-type charge generation layer and a P-type charge generation layer to control charge balance between the first and second stacks. The P-type charge generation layer is doped with 1% to 20% of a hole transport material based on a volume of the P-type charge generation layer. | 2014-07-03 |
20140183476 | THIN-FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME AND DISPLAY DEVICE COMPRISING THE SAME - A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises a gate electrode formed on the oxide semiconductor layer such that a first surface of the oxide semiconductor layer faces the gate electrode. A source electrode and a drain electrode are electrically connected to the oxide semiconductor layer, respectively. The oxide semiconductor layer, gate electrode, source electrode and drain electrode are arranged in a coplanar transistor configuration. A light-blocking element is also arranged to shield a second surface of the oxide semiconductor layer from external light. | 2014-07-03 |
20140183477 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - Provided is an organic light emitting display device. The organic light emitting display device comprises a substrate; a first electrode formed on the substrate and including a first sub-electrode and a second sub-electrode which have different reflectivities with respect to light wavelengths and are mutually stacked; an organic layer formed on the first electrode and including an organic light emitting layer; and a second electrode formed on the organic layer. | 2014-07-03 |
20140183478 | FLEXIBLE ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A flexible organic light-emitting display device and a method of manufacturing the flexible organic light-emitting display device are provided. The flexible organic light-emitting display device comprises a lower flexible substrate assembly and an upper flexible substrate assembly that are bonded by a bonding layer. The lower flexible substrate assembly includes a first flexible substrate, a thin film transistor formed on the first flexible substrate, a white organic light-emitting element formed on the thin film transistor, and an encapsulation layer formed on the white organic light-emitting element. The upper flexible substrate assembly comprises a second flexible substrate, an interlayer and a touch sensing unit formed on the interlayer layer. The interlayer may be at least one of a color filter layer, a transparent resin layer, an insulating film layer and a second flexible substrate. | 2014-07-03 |
20140183479 | TRANSPARENT ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are an organic light emitting display device and a method for manufacturing the same. The organic light emitting display device includes a plurality of pixels, each including a set of sub pixels. Each of the sub pixels has an emissive area for emitting light and a transmissive area for passing the external light. At least two sub pixels are symmetrically arranged on each side of an auxiliary electrode, and share the auxiliary electrode. | 2014-07-03 |
20140183480 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - An OLED display device which prevents a color change according to a viewing angle. The OLED display device may include a substrate defined by a first pixel, a second pixel, a third pixel and a fourth pixel; an anode electrode on the substrate; a first organic light-emitting layer for emitting a first color light; a second organic light-emitting layer for emitting a second color light; a cathode electrode formed of a semi-transparent metal material on the first or second organic light-emitting layer, wherein the first organic light-emitting layer is formed in the first pixel and the second pixel; the second organic light-emitting layer is formed in the second pixel, the third pixel and the fourth pixel; and the second pixel emits mixed light of the first color light and the second color light. | 2014-07-03 |
20140183481 | Organic Light Emitting Display Device - Provided are an organic light emitting display device, the display device including: a substrate defined into a display area and a non-display area; sub-pixels formed on the display area of the substrate; and dummy sub-pixels formed on the non-display area of the substrate, the dummy sub-pixels have a different shape for each position of the non-display area. | 2014-07-03 |
20140183482 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is an organic light emitting display device. The organic light emitting display device includes a substrate in which at least three pixel areas are defined, a first electrode and a hole transporting layer formed on the substrate, an light-emitting material layer formed on the hole transporting layer in each of the pixel areas, and an electron transporting layer and a second electrode formed on the light-emitting material layer. An optical assistant transporting layer is formed on the light-emitting material layer at a position corresponding to one of the pixel areas, and formed of an electron transporting material. Accordingly, provided can be a high-resolution organic light emitting display device that solves an imbalance of electric charges and has an excellent light output efficiency and an enhanced service life. | 2014-07-03 |
20140183483 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided is an organic light-emitting display device comprising a substrate, an insulating layer disposed on the substrate, a first electrode disposed on the insulating layer, an organic layer disposed on the first electrode, a second electrode disposed on the organic layer, an auxiliary electrode disposed on the insulating layer and a metal layer disposed adjacent to the auxiliary electrode and connected to the auxiliary electrode and the second electrode. | 2014-07-03 |
20140183484 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE - There is provided an organic light-emitting display device comprising a plurality of pixels arranged in a matrix pattern and a plurality of wiring lines formed in a zigzag pattern and extending in a row direction between the pixels. | 2014-07-03 |
20140183485 | BLUE FLUORESCENT COMPOUNDS AND ORGANIC LIGHT EMITTING DIODE DEVICES USING THE SAME - A blue fluorescent compound is disclosed. The blue fluorescent compound represented by the following Chemical Formula 1, | 2014-07-03 |
20140183486 | NOVEL COMPOUND, MATERIAL FOR ORGANIC ELECTROLUMINESCENCE DEVICE, AND ORGANIC ELECTROLUMINESCENCE DEVICE - A specific material for organic electroluminescence device having m-phenylene skeleton in its molecule realizes a highly heat-resistant and long lifetime organic electroluminescence device capable of driving at low voltage with high efficiency. | 2014-07-03 |
20140183487 | METHOD OF MANUFACTURING PROTEIN SEMICONDUCTOR, PROTEIN SEMICONDUCTOR, METHOD OF MANUFACTURING PN JUNCTION, PN JUNCTION, METHOD OF MANUFACTURING SEMICONDUCTOR APPARATUS, SEMICONDUCTOR APPARATUS, ELECTRONIC APPARATUS, AND METHOD OF CONTROLLING CONDUCTIVITY TYPE OF PROTEIN SEMICONDUCTOR - A conductivity type of a protein semiconductor is controlled by controlling total amount of charge in amino acid residues, a p-type protein semiconductor or an n-type protein semiconductor is manufactured, and a pn junction is manufactured using the p-type protein semiconductor and the n-type protein semiconductor. The total amount of charge in amino acid residues is controlled by substituting one or more of an acidic amino acid residue, a basic amino acid residue, and a neutral amino acid residue, which are contained in protein, with an amino acid residue having different properties, chemically modifying one or more of an acidic amino acid residue, a basic amino acid residue, and a neutral amino acid residue, which are contained in the protein, or controlling polarity of a medium surrounding the protein. | 2014-07-03 |
20140183488 | ORGANIC ELECTROLUMINESCENT COMPONENT - The invention relates to an organic electroluminescent component having a first organic functional stack ( | 2014-07-03 |
20140183489 | NOVEL COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE USING SAME - The present invention provides a novel compound that is capable of largely improving a life span, efficiency, electrochemical stability and thermal stability of an organic light emitting device, and an organic light emitting device in which the compound is included in an organic compound layer. | 2014-07-03 |
20140183490 | Copper(I) Complexes, In Particular For Optoelectronic Components - The embodiments of the invention relate to copper(I) complexes of the formula A | 2014-07-03 |
20140183491 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE - Disclosed is an organic light emitting diode display device in which at least one lateral surface of an encapsulation substrate is inclined to prevent disconnection of a film connected to a pad, thereby achieving a narrow bezel and enhanced reliability. The display device includes a substrate, an organic light emitting diode array including a thin film transistor arranged on the substrate and an organic light emitting diode connected to the thin film transistor, a pad disposed on the substrate and configured to receive a drive signal to drive the organic light emitting diode array, an encapsulation substrate bonded to the substrate to face each other so as to cover the organic light emitting diode array, and a film connected to the pad and provided with a drive chip thereon. At least one lateral surface of the encapsulation substrate is inclined. | 2014-07-03 |
20140183492 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device includes a first electrode formed on a substrate, a second electrode facing the first electrode, a blue emission layer formed between the first and second electrodes, a capping layer formed on the second electrode, and a front sealing layer formed on the capping layer and comprising an inorganic barrier layer and an organic barrier layer alternately formed at least once, wherein a luminescent dopant included in the blue emission layer has a maximum photoluminescence wavelength of 465 nm or less, and blue light generated from the blue emission layer and emitted via the front sealing layer or the substrate has a Y color coordinate (CIEy) of 0.055 or less. | 2014-07-03 |
20140183493 | Organic Light Emitting Display Device and Method of Fabricating the Same - Disclosed herein are an organic light emitting display device includes first to third sub-pixels realizing different colors, wherein each of the first to third sub-pixels includes first and second electrodes disposed on a substrate so as to face each other, an emission layer formed between the first and second electrodes, a multi-layered hole transporting layer formed between the first electrode and the emission layer to be in contact with the first electrode and the emission layer, and an electron transporting layer formed between the second electrode and the emission layer, wherein multi-layered hole transporting layer of at least one of the first to third sub-pixels includes an at least two-layered first hole transporting layer formed of a hole host and a p-type dopant having a doping concentration of 1 to 10% and a second hole transporting layer formed of the hole host. | 2014-07-03 |
20140183494 | Organic Light Emitting Display Device - An organic light emitting display device includes first and second electrodes facing each other on a substrate, a charge generation layer formed between the first and second electrodes, a first light emitting stack formed between the charge generation layer and the first electrode, and a second light emitting stack formed between the charge generation layer and the second electrode, wherein a hole injection layer of a light emitting stack to realize blue color of the first and second light emitting stacks is formed by doping a host formed of hexaazatriphenylene (HAT-CN) with 0.5% to less than 10% of a dopant formed of a hole transporting material based on a volume of the hole injection layer. | 2014-07-03 |
20140183495 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting diode includes a substrate; a first electrode on the substrate; a second electrode disposed opposite to the first electrode; an emission layer disposed between the first electrode and the second electrode; a hole migration region disposed between the first electrode and the emission layer; and an electron migration region disposed between the emission layer and the second electrode, wherein the hole migration region comprises a first compound represented by Formula 1 below, and at least one of the hole migration region and the emission layer comprises a second compound represented by Formula 2 below. Substituents in Formulae 1 and 2 are the same as described in the specification. | 2014-07-03 |
20140183496 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device includes first and second electrodes facing each other on a substrate, a charge generation layer formed between first and second electrodes, a first light emitting unit including a first emission layer formed between the first electrode and the charge generation layer, a hole transport layer supplying holes from the first electrode to the first emission layer, and a second light emitting unit including a second emission layer formed between the second electrode and the charge generation layer, a hole transport layer supplying holes from the charge generation layer to the second emission layer, wherein a total thickness of the hole transport layer of the first light emitting unit is greater than that of the hole transport layer of the second light emitting unit. | 2014-07-03 |
20140183497 | ORGANIC LIGHT-EMITTING DIODE, ORGANIC LIGHT-EMITTING DIODE SUBSTRATE, AND METHOD OF MANUFACTURING SAME - An organic light-emitting diode manufactured from an organic light-emitting diode substrate in which a concave-convex structure is provided in at least a part of the surface, in which the concave-convex structure is capable of obtaining an atomic force microscope (AFM) image in which a plurality of dots is dispersed when observed by an AFM. A histogram is created by measuring a diameter (nm) of each of the plurality of dots present in a randomly selected region having an area of 25 μm | 2014-07-03 |
20140183498 | Thin Film Silicon Nitride Barrier Layers On Flexible Substrate - An article comprising a polymeric substrate and at least one inorganic barrier layer, wherein the inorganic barrier layer has a stress not greater than about 400 MPa and a density of at least about 1.5 g/cm | 2014-07-03 |
20140183499 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display device with enhanced luminous efficiency and color viewing angle and a method of manufacturing the same are disclosed. The method includes forming a first electrode of each of red, green, blue and white sub-pixels on a substrate, forming a white organic common layer on the first electrodes, and forming a second electrode on the white organic common layer, wherein the first electrodes each includes multiple transparent conductive layers and is formed such that a thickness of the first electrode of each of two sub-pixels among the red, green, blue and white sub-pixels is greater than a thickness of the first electrode of each of the other two sub-pixels, and at least two layers excluding the lowermost layer among the multiple transparent conductive layers of each first electrode are formed to cover opposite sides of the lowermost layer. | 2014-07-03 |
20140183500 | ORGANIC ELECTROLUMINESCENCE - A fused amine compound including a furan ring or a thiophene ring and an organic electroluminescence device employing the amine compound. The organic electroluminescence device includes a cathode, an anode, and one or more organic thin film layers which are disposed between the cathode and the anode. The organic thin film layers include a light emitting layer and at least one layer of the organic thin film layers includes at least one amine compound. | 2014-07-03 |
20140183501 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - Provided are an organic light emitting display device and a method for manufacturing the same. The organic light emitting display device comprises at least a first pixel area and a second pixel area. A partition is disposed between the first pixel area and the second pixel area. An auxiliary electrode is disposed between the first pixel area and the second pixel area and over the partition. Additionally, a first conductive element is disposed over the first pixel area, the second pixel area, and the auxiliary electrode and the first conductive element is electrically connected to the auxiliary electrode. | 2014-07-03 |
20140183502 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An OLED display includes a substrate; a first electrode on the substrate; an organic emission layer on the first electrode; a second electrode on the organic emission layer; an organic layer on the second electrode and corresponding to the first electrode; and an auxiliary electrode contacting the second electrode and neighboring the organic layer. | 2014-07-03 |
20140183503 | Light-Emitting Element, Light-Emitting Device, Electronic Appliance, and Lighting Device - Disclosed is a light-emitting element having high emission efficiency, capable of driving at low voltage, and showing a long lifetime. The light-emitting element contains a compound between a pair of electrodes, and the compound is configured to give a first peak of m/z around 202 and a second peak of m/z around 227 in a mass spectrum. The first and second peaks are product ions of the compound and possess compositions of C | 2014-07-03 |
20140183504 | HETEROARENE DERIVATIVE AND MATERIAL FOR ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME - A heteroarene derivative including a nitrogen-boron coordinate bond, represented by the following formula (1). In the formula (1). Z | 2014-07-03 |
20140183505 | BINAPHTHALENE DERIVATIVES, PREPARATION METHOD THEREOF AND ORGANIC ELECTRONIC DEVICE USING THE SAME - The present invention relates to a new binaphthalene derivative, a preparation method thereof, and an organic electronic device using the same. The binaphthalene derivative according to the present invention can perform functions of hole injection and transportation, electron injection and transportation, or light emission in an organic electronic device including an organic light-emitting device, and the device according to the present invention has excellent characteristics in terms of efficiency, drive voltage and stability, and in particular excellent effects such as a low voltage and a long life time. | 2014-07-03 |
20140183506 | METHOD FOR MANUFACTURING TRANSISTOR AND TRANSISTOR - A method for manufacturing a transistor includes: forming a base film for supporting a catalyst for electroless plating; forming a resist layer having an opening portion corresponding to source and drain electrodes onto the base film; causing the base film within the opening portion to support the catalyst for electroless plating and performing a first electroless plating; removing the resist layer; performing a second electroless plating on a surface of an electrode which is formed by the first electroless plating and forming the source and drain electrodes; and forming a semiconductor layer in contact with surfaces of the source and drain electrodes, the surfaces facing each other, wherein an energy level difference between a work function of a material which is used for the second electroless plating and an energy level of a molecular orbital which is used for electron transfer in a material of the semiconductor layer is less than an energy level difference between a work function of a material which is used for the first electroless plating and the energy level of the molecular orbital. | 2014-07-03 |
20140183507 | ORGANIC FIELD-EFFECT TRANSISTOR - An organic transistor including at least one lower substrate made of plastic material, two electrodes, respectively a source electrode and a drain electrode, deposited on the plastic substrate, a semiconductor layer made of an organic semiconductor material and deposited on the electrodes and the plastic substrate, a dielectric layer deposited on the semiconductor layer, and a gate electrode formed on said dielectric layer. It further includes a porous layer extending between the plastic substrate and the semiconductor layer, said porous layer extending at least between the source and drain electrodes, to decrease the dielectric constant of the surface of said plastic substrate. | 2014-07-03 |
20140183508 | POLYMERIC LIGHT EMITTING SUBSTANCE AND POLYMER LIGHT EMITTING DEVICE USING THE SAME - A polymeric light emitting substance having a polystyrene reduced number-average molecular weight of from 10 | 2014-07-03 |
20140183509 | LIGHT-EMITTING ELEMENT AND DISPLAY DEVICE - There has been a problem that difference in refractive index between an opposite substrate or a moisture barrier layer provided thereover, and air is maintained large, and light extraction efficiency is low. Further, there has been a problem that peeling or cracking due to the moisture barrier layer is easily generated, which leads to deteriorate the reliability and lifetime of a light-emitting element. A light-emitting element comprises a pixel electrode, an electroluminescent layer, a transparent electrode, a passivation film, a stress relieving layer, and a low refractive index layer, all of which are stacked sequentially. The stress relieving layer serves to prevent peeling of the passivation film. The low refractive index layer serves to reduce reflectivity of light generated in the electroluminescent layer in emitting to air. Therefore, a light-emitting element with high reliability and long lifetime and a display device using the light-emitting element can be provided. | 2014-07-03 |
20140183510 | DISPLAY UNIT HAVING AN ARRANGEMENT OF A RETENTIVE CAPACITOR AND AN EL DEVICE OF EACH PIXEL WITH RESPECT TO ADJACENT PIXEL FOR LOW LIGHT LEAKAGE AMONG ADJACENT PIXELS - A display unit with which lowering of long-term reliability of a transistor is decreased is provided. The display unit includes a display section having a plurality of organic EL devices with light emitting color different from each other and a plurality of pixel circuits that are singly provided for every said organic EL device for every pixel. The pixel circuit has a first transistor for writing a video signal, a second transistor for driving the organic EL device based on the video signal written by the first transistor, and a retentive capacity, and out of the first transistor and the second transistor, a third transistor provided correspondingly to a second organic EL device adjacent to a first organic EL device is arranged farther from the first organic EL device than a first retentive capacity provided correspondingly to the second organic EL device out of the retentive capacity. | 2014-07-03 |
20140183511 | LIGHT-EMITTING DEVICE - There is provided an EL light-emitting device with less uneven brightness. When a drain current of a plurality of current controlling TFTs is Id, a mobility is μ, a gate capacitance per unit area is Co, a maximum gate voltage is Vgs | 2014-07-03 |
20140183512 | ORGANIC LIGHT-EMITTING DIODE HAVING DOPED LAYERS - Organic light-emitting diode comprising a lower electrode ( | 2014-07-03 |
20140183513 | FIELD-EFFECT TRANSISTOR COMPRISING A LEAKAGE-CURRENT LIMITER - A field-effect transistor including at least one lower substrate having two electrodes deposited thereon, respectively a source electrode and a drain electrode, a dielectric layer made of a dielectric material, and a gate electrode deposited on the dielectric layer. It includes an intermediate layer, made of a material comprising molecules having a dipole moment complying with specific direction criteria, deposited between the gate electrode and the dielectric layer, said intermediate layer extending at least under the entire surface area taken up by the gate electrode, the intermediate layer being made of an organic compound comprising at least one binding function for the gate electrode. | 2014-07-03 |
20140183514 | IMAGE SENSOR AND METHOD OF MANUFACTUING THE SAME - An image sensor and a method of manufacturing the same. The image sensor includes a plurality of photoelectric conversion units that are horizontally arranged and selectively emit electric signals by absorbing color beams. | 2014-07-03 |
20140183515 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A high-quality light emitting device is provided which has a long-lasting light emitting element free from the problems of conventional ones because of a structure that allows less degradation, and a method of manufacturing the light emitting device is provided. After a bank is formed, an exposed anode surface is wiped using a PVA (polyvinyl alcohol)-based porous substance or the like to level the surface and remove dusts from the surface. An insulating film is formed between an interlayer insulating film on a TFT and the anode. Alternatively, plasma treatment is performed on the surface of to the interlayer insulating film on the TFT for surface modification. | 2014-07-03 |
20140183516 | ELECTRONIC DEVICE - A method of fabricating an electronic device, such as an organic thin film transistor, is disclosed. A substrate, for example a silicate glass substrate, has a surface which supports at least one metallic electrode comprising at least one metal, for example gold, and at least a portion of the surface of the substrate is exposed. The method comprises selectively forming a self-assembled layer on the exposed portion of the substrate surface such that no self-assembled layer is formed on the at least one metallic electrode and applying a solution or other liquid which is repelled by the self-assembled layer to at least one metal electrode so as to selectively form a layer of further material, such as a charge injection promoting material, on the at least one metallic electrode. | 2014-07-03 |
20140183517 | MATERIAL FOR ORGANIC LIGHT-EMITTING DEVICE, AND ORGANIC LIGHT-EMITTING DEVICE USING SAME - The present specification provides an organic light emitting device comprising: a first electrode, a second electrode, and organic material layers formed of one or more layers comprising a light emitting layer disposed between the first electrode and the second electrode, wherein one or more layers of the organic material layers comprise the compound of Formula 1, or a compound in which a heat-curable or photocurable functional group is introduced into this compound. | 2014-07-03 |
20140183518 | N-TYPE METAL OXIDE SEMICONDUCTOR (NMOS) TRANSISTOR FOR ELECTROSTATIC DISCHARGE (ESD) - One or more techniques or systems for forming an n-type metal oxide semiconductor (NMOS) transistor for electrostatic discharge (ESD) are provided herein. In some embodiments, the NMOS transistor includes a first region, a first n-type plus (NP) region, a first p-type plus (PP) region, a second NP region, a second PP region, a shallow trench isolation (STI) region, and a gate stack. In some embodiments, the first PP region is between the first NP region and the second NP region. In some embodiments, the second NP region is between the first PP region and the second PP region, the gate stack is between the first PP region and the second NP region, the STI region is between the second NP region and the second PP region. Accordingly, the first PP region enables ESD current to discharge based on a low trigger voltage for the NMOS transistor. | 2014-07-03 |
20140183519 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME AND ELECTRONIC DEVICE - According to embodiments of the present invention, there are provided a TFT array substrate, a method for manufacturing the TFT array substrate and an electronic device. The method for manufacturing the TFT array substrate comprises: a first patterning process, in which a pattern of a pixel electrode formed by a first transparent conductive layer and patterns of a drain electrode and a source electrode that are separated from each other and a data line, which are formed by a first metal layer, are formed on a transparent substrate; a second patterning process, in which a pattern of a gate insulating layer and a pattern of an active layer formed by a transparent oxide layer are formed on the transparent substrate subjected to the first patterning process; and a third patterning process, in which a pattern of a common electrode formed by a second transparent conductive layer and patterns of a gate electrode and a gate line which are formed by a second metal layer are formed on the transparent substrate subjected to the second patterning process. | 2014-07-03 |
20140183520 | OXIDE THIN FILM TRANSISTOR STRUCTURE AND METHOD THEREOF - An oxide thin film transistor structure includes a substrate, a drain electrode disposed on the substrate, and a first insulation layer disposed on the drain electrode and the substrate. The first insulation layer has a first opening to expose a part of the drain electrode. A gate electrode and a gate insulation layer are sequentially disposed on the first insulation layer and located around the first opening. A metal oxide channel layer is disposed on the gate insulation layer and located in the first opening. A source electrode is disposed on the metal oxide channel layer. An area of the metal oxide channel layer corresponding to the first opening is a channel region. | 2014-07-03 |
20140183521 | THIN FILM TRANSISTOR STRUCTURE - A thin film transistor structure including a substrate, a gate, an oxide semiconductor layer, a gate insulation layer, a source, a drain, a silicon-containing light absorption layer and an insulation layer is provided. The gate insulation layer is disposed between the oxide semiconductor layer and the gate. The oxide semiconductor layer and the gate are stacked in a thickness direction. The source and the drain contact the oxide semiconductor layer. A portion of the oxide semiconductor layer without contacting the source and the drain defines a channel region located between the source and the drain. The oxide semiconductor layer is located between the substrate and the silicon-containing light absorption layer. The silicon-containing light absorption layer has a band gap smaller than 2.5 eV. The insulation layer is disposed between the oxide semiconductor layer and the silicon-containing light absorption layer, and in contact with the silicon-containing light absorption layer. | 2014-07-03 |
20140183522 | THIN FILM TRANSISTOR, THIN FILM TRANSISTOR ARRAY PANEL INCLUDING THE SAME AND MANUFACTURING METHOD THEREOF - A thin film transistor array panel including a substrate; a channel region disposed on the substrate and including oxide semiconductor disposed on the substrate; a source electrode and a drain electrode connected to the oxide semiconductor and facing each other at both sides, centered on the oxide semiconductor; an insulating layer disposed on the oxide semiconductor; and a gate electrode disposed on the insulating layer. The drain electrode includes a first drain region and a second drain region; the charge mobility of the first drain region is greater than that of the second drain region, the source electrode includes a first source region and a second source region, and the charge mobility of the first source region is greater than that of the second source region. | 2014-07-03 |
20140183523 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - A semiconductor device with high aperture ratio is provided. The semiconductor device includes a nitride insulating film, a transistor over the nitride insulating film, and a capacitor including a pair of electrodes over the nitride insulating film. An oxide semiconductor layer is used for a channel formation region of the transistor and one of the electrodes of the capacitor. A transparent conductive film is used for the other electrode of the capacitor. One electrode of the capacitor is in contact with the nitride insulating film, and the other electrode of the capacitor is electrically connected to one of a source electrode and a drain electrode of the transistor. | 2014-07-03 |
20140183524 | INVERTER AND DRIVING CIRCUIT AND DISPLAY DEVICE INCLUDING THE SAME - An inverter includes a first N type oxide transistor operated in a depletion mode; and a second N type oxide transistor operated in a normal mode or enhancement mode, wherein an overlap area between an etch stop layer and a drain electrode of the first N type oxide transistor is greater than an overlap area between the etch stop layer and a source electrode of the first N type oxide transistor. | 2014-07-03 |
20140183525 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - The present invention makes it possible to increase the selectivity of a gate insulation film in an active element formed in a wiring layer. | 2014-07-03 |
20140183526 | LIGHT DETECTION DEVICE - Exemplary embodiments of the present invention relates to a light detection device including a substrate, a non-porous layer disposed on the substrate, a light absorption layer disposed on the non-porous layer, the light absorption layer including pores formed in a surface thereof, a Schottky layer disposed on the surface of the light absorption layer and in the pores, and a first electrode layer disposed on the Schottky layer. | 2014-07-03 |
20140183527 | SEMICONDUCTOR DEVICE - A highly reliable semiconductor device including an oxide semiconductor is provided. Provided is a semiconductor device including an oxide semiconductor layer, an insulating layer in contact with the oxide semiconductor layer, a gate electrode layer overlapping with the oxide semiconductor layer, and a source electrode layer and a drain electrode layer electrically connected to the oxide semiconductor layer. The oxide semiconductor layer includes a first region having a crystal whose size is less than or equal to 10 nm and a second region which overlaps with the insulating layer with the first region provided therebetween and which includes a crystal part whose c-axis is aligned in a direction parallel to a normal vector of the surface of the oxide semiconductor layer. | 2014-07-03 |
20140183528 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device with high aperture ratio is provided. The semiconductor device includes a transistor and a capacitor having a pair of electrodes. An oxide semiconductor layer formed over the same insulating surface is used for a channel formation region of the transistor and one of the electrodes of the capacitor. The other electrode of the capacitor is a transparent conductive film. One electrode of the capacitor is electrically connected to a wiring formed over the insulating surface over which a source electrode or a drain electrode of the transistor is provided, and the other electrode of the capacitor is electrically connected to one of the source electrode and the drain electrode of the transistor. | 2014-07-03 |
20140183529 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced. | 2014-07-03 |
20140183530 | SEMICONDUCTOR DEVICE AND MEASUREMENT DEVICE - A semiconductor device includes an oxide semiconductor layer over a first oxide layer; first source and drain electrodes over the oxide semiconductor layer; second source and drain electrodes over the first source and drain electrodes respectively; a second oxide layer over the first source and drain electrodes; a gate insulating layer over the second source and drain electrodes and the second oxide layer; and a gate electrode overlapping the oxide semiconductor layer with the gate insulating layer provided therebetween. The structure in which the oxide semiconductor layer is sandwiched by the oxide layers can suppress the entry of impurities into the oxide semiconductor layer. The structure in which the oxide semiconductor layer is contacting with the source and drain electrodes can prevent increasing resistance between the source and the drain comparing one in which an oxide semiconductor layer is electrically connected to source and drain electrodes through an oxide layer. | 2014-07-03 |
20140183531 | METHOD FOR PRODUCING P-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAYER, METHOD FOR PRODUCING ZnO BASED COMPOUND SEMICONDUCTOR ELEMENT, AND AN N-TYPE ZnO BASED COMPOUND SEMICONDUCTOR LAMINATE STRUCTURE - A method for producing a p-type ZnO based compound semiconductor layer including the steps of (a) supplying (i) Zn, (ii) O, (iii) optional Mg, and (iv) a Group 11 element which is Cu and/or Ag to form a Mg | 2014-07-03 |
20140183532 | OXIDE SEMICONDUCTOR FILM AND SEMICONDUCTOR DEVICE - An oxide semiconductor film which has more stable electric conductivity is provided. Further, a semiconductor device which has stable electric characteristics and high reliability is provided by using the oxide semiconductor film. An oxide semiconductor film includes a crystalline region, and the crystalline region includes a crystal in which an a-b plane is substantially parallel with a surface of the film and a c-axis is substantially perpendicular to the surface of the film; the oxide semiconductor film has stable electric conductivity and is more electrically stable with respect to irradiation with visible light, ultraviolet light, and the like. By using such an oxide semiconductor film for a transistor, a highly reliable semiconductor device having stable electric characteristics can be provided. | 2014-07-03 |
20140183533 | INTEGRATED CIRCUIT AND METHOD FOR FABRICATING AN INTEGRATED CIRCUIT EQUIPPED WITH A TEMPERATURE PROBE - This integrated circuit comprises:
| 2014-07-03 |
20140183534 | THIN-WAFER CURRENT SENSORS - Embodiments relate to IC current sensors fabricated using thin-wafer manufacturing technologies. Such technologies can include processing in which dicing before grinding (DBG) is utilized, which can improve reliability and minimize stress effects. While embodiments utilize face-up mounting, face-down mounting is made possible in other embodiments by via through-contacts. IC current sensor embodiments can present many advantages while minimizing drawbacks often associated with conventional IC current sensors. | 2014-07-03 |
20140183535 | THIN FILM TRANSISTOR ARRAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel according to an exemplary embodiment of the invention includes: a substrate, a gate line disposed on the substrate and including a gate electrode, a gate insulating layer disposed on the gate line, a semiconductor disposed on the gate insulating layer, a data line disposed on the semiconductor and including a source electrode, a drain electrode disposed on the semiconductor and opposite to the source electrode, a color filter disposed on the gate insulating layer, the data line and the drain electrode, an overcoat disposed on the color filter and including an inorganic material, a contact hole defined in the color filter and the overcoat, where the contact hole exposes the drain electrode, and a pixel electrode disposed on the overcoat and connected through the contact hole to the drain electrode, in which a plane shape of the contact hole in the overcoat and a plane shape of the contact hole in the color filter are substantially the same as each other. | 2014-07-03 |
20140183536 | THIN FILM TRANSISTOR PANEL AND METHOD FOR MANUFACTURING THE SAME - A thin film transistor array panel according to an exemplary embodiment of the present invention includes: an insulation substrate; a thin film transistor disposed on the insulation substrate, wherein the thin film transistor includes a first electrode; a first contact hole pattern having a first width, wherein the first contact hole pattern exposes a portion of the first electrode, and a first contact hole to expose the portion of the first electrode, wherein an inner sidewall of the first contact hole pattern constitutes a first portion of the first contact hole. | 2014-07-03 |
20140183537 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - Disclosed is a thin-film transistor array substrate including a Gate driver In Panel (GIP). The GIP includes a first wiring on a substrate, a first insulating film covering the first wiring, a second wiring on the first insulating film, a second insulating film covering the second wiring, a third insulating film over the second insulating film, first and second contact holes to expose the first and second wirings, and a third wiring on the third insulating film for connection of the first and second wirings. The third insulating film includes a first area corresponding to the first and second contact holes, a second area corresponding to a region between the first and second contact holes within a first thickness range, and a remaining third area within a second thickness range, the minimum value of the first thickness range being greater than the maximum value of the second thickness range. | 2014-07-03 |
20140183538 | BACK PLANE FOR FLAT PANEL DISPLAY AND METHOD OF MANUFACTURING THE SAME - There are provided a back plane for a flat panel display and a method of manufacturing the back plane, and more particularly, a back plane for an organic light-emitting display device, which enables front light-emitting, and a method of manufacturing the back plane. The back plane for a flat panel display includes: a substrate; a gate electrode on the substrate; a first capacitor on the substrate, the first capacitor comprising a first electrode, an insulation pattern layer on the first electrode, and a second electrode on the insulation pattern layer; a first insulation layer on the substrate to cover the gate electrode and the first capacitor; an active layer on the first insulation layer to correspond to the gate electrode; and a source electrode and a drain electrode on the substrate to contact a portion of the active layer. | 2014-07-03 |
20140183539 | ULTRA HIGH RESOLUTION LIQUID CRYSTAL DISPLAY HAVING A COMPENSATING THIN FILM TRANSISTOR AT EACH PIXEL - The present disclosure relates to an ultra high-resolution liquid crystal display having a compensating thin film transistor at each pixel. The present disclosure suggests a thin film transistor substrate comprising: gate lines running in horizontal direction and data lines running in vertical direction which define a plurality of pixel area on a substrate; a first gate electrode and a second gate electrode formed by dividing any one gate line disposed at any one of an upper side and a lower side; a first thin film transistor connected to the first gate electrode; and a second thin film transistor connected to the first thin film transistor and the second gate electrode. The flat panel display according to the present disclosure has an ultra high-density resolution over 300PPI with the high aperture ratio. | 2014-07-03 |