26th week of 2022 patent applcation highlights part 72 |
Patent application number | Title | Published |
20220209027 | PHOTOVOLTAIC CELL, METHOD FOR MANUFACTURING SAME, AND PHOTOVOLTAIC MODULE - A photovoltaic cell is provided, which includes a substrate; a first passivation layer and a first anti-reflection layer disposed on a front surface of the substrate; and a second passivation layer, a PPW layer and at least one silicon nitride layer Si | 2022-06-30 |
20220209028 | PHOTOCONDUCTIVE SEMICONDUCTOR SWITCH ASSEMBLY UTILIZING A RESONANT CAVITY - A PCSS comprises a photoconductive semiconductor block that exhibits electrically-conductive behavior when exposed to light of a predetermined wavelength; two or more electrodes fixed to the photoconductive semiconductor block and connectable to a power supply; a resonance cavity enveloping the photoconductive semiconductor block, the resonance cavity having a reflective outer surface to trap light within the resonance cavity and the photoconductive semiconductor block, the resonance cavity having a window through the reflective outer surface to admit light of the predetermined wavelength, the resonance cavity being transmissive to light of the predetermined wavelength within the reflective outer surface; and a light source directed toward the photoconductive semiconductor block and through the window, and emitting light at the predetermined wavelength. The photoconductive semiconductor block may include Si, GaAs, GaN, AlN, SiC, and/or Ga | 2022-06-30 |
20220209029 | HYDROTHERMAL GENERATION OF SINGLE CRYSTALLINE MOLYBDENUM DISULFIDE - Disclosed is a method for synthesizing single crystalline molybdenum disulfide via a hydrothermal process that minimizes or eliminates carbon byproducts. The method involves providing two components, including a source of molybdenum and a mineralizer solution, to an inert reaction vessel, heating one zone sufficiently to dissolve the source of molybdenum in the mineralizer solution, and heating a second zone to a lower temperature to allow thermal transport to drive the dissolved material to the second zone, and then precipitate MoS | 2022-06-30 |
20220209030 | METHOD OF MANUFACTURING SOLAR CELL WITH INCREASED POWER GENERATION AREA - Discloses is a method of manufacturing a solar cell with an increased power generation area to increase the area used for actual power generation without increasing the size of the solar cell. | 2022-06-30 |
20220209031 | METHOD FOR PRODUCING TEXTURED SOLAR WAFERS - The present invention relates to a method for producing solar wafers textured at least on one side, wherein in a first method step, sawn solar wafers with sawing damage are provided, and at the end of the last method step textured solar wafers with different size types of large and small pyramids are provided, and wherein the textured solar wafers can then be further processed to produce solar cells. The problem addressed by the present invention is that of providing an improved texturing method within the framework of the technology for the production of solar cells. This problem is solved by a method for producing textured solar wafers wherein in the first texture etching step the large pyramids are created in a low surface area density such that at the end of the method less than 30% of the textured surface of the solar wafer is occupied by the large pyramids; and in the second texture etching step the small pyramids are produced with a large surface area density. | 2022-06-30 |
20220209032 | CRYSTAL SILICON SOLAR CELL MODULE AND CELL AGGREGATE FOR CRYSTAL SILICON SOLAR CELL MODULE - Each solar cell | 2022-06-30 |
20220209033 | SOLAR CELL SHEET, SOLAR CELL PANEL AND SCREEN PRINTING PLATE - A solar cell includes a light facing face provided with a plurality of front electrodes, and a shadow face provided with a plurality of back electrodes; the plurality of front electrodes are arranged separately in a length direction to form a front-electrode strip; the plurality of back electrodes are arranged separately in the length direction to form a back-electrode strip; a center line of the front-electrode strip in the length direction is a first center line; a center line of the back-electrode strip in the length direction is a second center line; a projection of the first center line in a first direction and a projection of the second center line in the first direction coincide; and a projection of a starting point of the front-electrode strip in the first direction and a projection of a starting point of the back-electrode strip in the first direction coincide. | 2022-06-30 |
20220209034 | PLASMONIC FIELD-ENHANCED PHOTODETECTOR AND IMAGE SENSOR USING LIGHT ABSORBING LAYER HAVING SPLIT CONDUCTION BAND AND VALENCE BAND - A plasmonic field-enhanced photodetector is disclosed. The photodetector absorbs surface plasmon polaritons (SPPs) by using a light absorbing layer having a conduction band and a valence band in which an energy is split, the SPPs being generated by combining surface plasmons (SPs) with photons of a light wave, and generates photocurrent based on the absorbed SPPs. | 2022-06-30 |
20220209035 | INFRARED DEVICE AND A METHOD OF MANUFACTURING THE SAME - An infrared device comprises a first mesa portion. The lateral surface of the first mesa portion includes a first lateral surface located on a side close to a bottom surface of the first mesa portion, a second lateral surface located above the first lateral surface, and a third lateral surface located above the second lateral surface. A first angle θ | 2022-06-30 |
20220209036 | DISCHARGE CONTROL VIA QUANTUM DOTS - Disclosed herein are devices and methods for photonic energy storage and on-demand photonic energy discharge. The devices and methods disclosed herein may provide improved temporal control over photonic energy discharge as compared to conventional fluorescent or phosphorescent materials. The devices and methods disclosed herein may provide mechanisms for on-demand photonic energy which may be used to generate light or may converted to electrical energy. A device of this disclosure may comprise a phosphorescent material and a fluorescent material. The phosphorescent material may be configured to absorb photonic energy. The phosphorescent material may store the photonic energy, or the phosphorescent material may transfer the photonic energy to the fluorescent material. The fluorescent material may be configured to emit photonic energy, which may be converted to electrical energy. | 2022-06-30 |
20220209037 | TRENCH PROCESS AND STRUCTURE FOR BACKSIDE CONTACT SOLAR CELLS WITH POLYSILICON DOPED REGIONS - A solar cell includes polysilicon P-type and N-type doped regions on a backside of a substrate, such as a silicon wafer. A trench structure separates the P-type doped region from the N-type doped region. Each of the P-type and N-type doped regions may be formed over a thin dielectric layer. The trench structure may include a textured surface for increased solar radiation collection. Among other advantages, the resulting structure increases efficiency by providing isolation between adjacent P-type and N-type doped regions, thereby preventing recombination in a space charge region where the doped regions would have touched. | 2022-06-30 |
20220209038 | SCHOTTKY-BARRIER TYPE INFRARED PHOTODETECTOR - The present invention provides an infrared photodetection device for detecting infrared radiation with a wavelength of 700 nm or larger comprising: a carrier transfer member comprised of a non-metallic material with a band gap; an absorber on one side of the carrier transfer member, and in electrical contact with the carrier transfer member, the absorber being a metallic material in which electron-hole pairs are excited upon absorption of infrared radiation; and a semiconductor on the other side of the carrier transfer member, and in electrical contact with the carrier transfer member; and wherein the carrier transfer member contains trap states such that majority carriers excited in the absorber due to infrared radiation are conducted via the trap states through the carrier transfer member to be collected b the semiconductor. | 2022-06-30 |
20220209039 | TANDEM SOLAR CELL - The present invention relates to a tandem solar cell which comprises: a perovskite solar cell comprising a perovskite absorption layer; a silicon solar cell placed under the perovskite solar cell; a junction layer placed between the perovskite solar cell and the silicon solar cell; an upper electrode placed on the perovskite solar cell; and a lower electrode placed under the silicon solar cell. | 2022-06-30 |
20220209040 | PHOTODIODES WITHOUT EXCESS NOISE - A photodiode, such as a linear mode avalanche photodiode can be made free of excess noise via having a superlattice multiplication region that allows only one electrical current carrier type, such as an electron or a hole, to accumulate enough kinetic energy to impact ionize when biased, where the layers are lattice matched. A photodiode can be constructed with i) a lattice matched pair of a first semiconductor alloy and a second semiconductor alloy in a superlattice multiplication region, ii) an absorber region, and iii) a semiconductor substrate. A detector with multiple photodiodes can be made with these construction layers in order to have a cutoff wavelength varied anywhere from 1.7 to 4.9 μm as well as a noise resulting from a dark current at a level such that an electromagnetic radiation signal with the desired minimum wavelength cutoff can be accurately sensed by the photodiode. | 2022-06-30 |
20220209041 | PHOTODIODE MANUFACTURING METHOD AND PHOTODIODE THEREOF - A photodiode manufacturing method and a photodiode thereof. The method comprises: doping a second type of material in a first region of an epitaxial layer to form a first doped region; forming a transfer gate on the upper surface of the epitaxial layer, one side of the transfer gate being connected to the first doped region; doping the second type of material in a second region of the epitaxial layer to form a second doped region, the second doped region being connected to the first doped region; and doping the second type of material in a third region of the epitaxial layer to obtain an output region, the other side of the transfer gate being connected to the output region. | 2022-06-30 |
20220209042 | PHOTODETECTION APPARATUS - Provided is a photodetection apparatus which includes a mounting board, and an optical sensor device that includes a first surface on the mounting board side and a second surface on a side opposite to the mounting board, and is mounted on the mounting board. The optical sensor device includes an optical sensor that includes a light receiving surface on the second surface side, a signal processing circuit that is electrically connected to the optical sensor, and a lead frame that is provided on the second surface side with respect to the signal processing circuit, and shields a surface of the signal processing circuit on the second surface side. The mounting board has a conductive pattern that faces the signal processing circuit and shields a surface of the signal processing circuit on the first surface side. | 2022-06-30 |
20220209043 | METHOD OF SEPARATING PLURALITY OF LED STRUCTURES FROM WAFER - The present disclosure relates to a method of separating a plurality of light-emitting diode (LED) structures from a wafer. According to the method, the LED structures each having a desired size, thickness, and shape can be separated from the wafer, using a commercialized wafer, without damage to the LED structures even without considering the presence or absence of a sacrificial layer and specifically pre-designing a thickness of semiconductor layers in the wafer from the time of wafer manufacturing. | 2022-06-30 |
20220209044 | CARRIER CONFINEMENT IN LEDS BY VALENCE BAND ENGINEERING - A micro-light emitting diode (micro-LED) includes a substrate, an n-type semiconductor layer on the substrate, a p-type semiconductor layer, and an active region between the n-type semiconductor layer and the p-type semiconductor layer and configured to emit red light. The active region includes a barrier layer characterized by a first lattice constant, and a quantum well layer next to the barrier layer. The quantum well layer is characterized by a second lattice constant greater than the first lattice constant and by an in-plane compressive strain. The active region has a lateral linear dimension equal to or less than about | 2022-06-30 |
20220209045 | CMOS COMPATIBLE LIGHT EMITTING TUNNEL JUNCTION (LETJ) - A Light Emitting Tunnel Junction (LETJ) has a first layer, a second layer, and a gap layer disposed between said first layer and said second layer, forming a junction across which carriers tunnel upon being electrically biased. This so-biased tunnel junction gener ates light such as a photon, surface plasmon, or hybrids thereof either as a single light particle emitter denoting a quantum source, or emit ting a plurality of said light particles either spontaneously or stimulat ed (lasing). This tunnel junction light source may include an optical resonator and/or may couple its emission to a waveguiding or fiber system. | 2022-06-30 |
20220209046 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs. | 2022-06-30 |
20220209047 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, and the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs. | 2022-06-30 |
20220209048 | HIGH-VOLTAGE LIGHT-EMITTING DEVICE - A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks. | 2022-06-30 |
20220209049 | MULTI-JUNCTION LIGHT-EMITTING DIODE AND METHOD FOR MAKING THE SAME - A multi-junction light-emitting diode (LED) includes a first epitaxial structure, a second epitaxial structure and a tunnel junction structure disposed therebetween. The tunnel junction structure includes a In | 2022-06-30 |
20220209050 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is above the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer. | 2022-06-30 |
20220209051 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs. | 2022-06-30 |
20220209052 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. | 2022-06-30 |
20220209053 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole chip, the multiple micro-LEDs sharing the light emitting layer. An isolation structure is formed between adjacent micro-LEDs, at least a portion of the isolation structure being formed in the light emitting layer. A top surface of the isolation structure is aligned with a top of the light emitting layer, and a bottom surface of the isolation structure is under the light emitting layer. | 2022-06-30 |
20220209054 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole chip, the multiple micro-LEDs sharing the light emitting layer. The micro-LED chip further includes: a top spacer formed on a top surface of the light emitting layer; a bottom spacer formed on a bottom surface of the light emitting layer; and an isolation structure formed between adjacent micro-LEDs. An edge of the top spacer is aligned with an edge of the light emitting layer, and an edge of the bottom spacer is aligned with the edge of the light emitting layer. | 2022-06-30 |
20220209055 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the second type conductive layer perpendicularly projected on a top surface of the first type conductive layer is surrounded by an edge of the first type conductive layer. | 2022-06-30 |
20220209056 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level away from a top edge of the first type conductive layer and a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by the bottom edge of the second type conductive layer. | 2022-06-30 |
20220209057 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer is continuously formed on the whole micro-LED chip, the multiple micro-LEDs sharing the light emitting layer. A profile of the first type conductive layer perpendicularly projected on a bottom surface of the second type conductive layer is surrounded by an edge of the second type conductive layer. | 2022-06-30 |
20220209058 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED structure includes a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from an edge of the second type conductive layer. An edge of the light emitting layer is aligned with an edge of the first type conductive layer. The edge of the first type conductive layer extends along the horizontal level away from the edge of the second type conductive layer. | 2022-06-30 |
20220209059 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED of the multiple micro-LEDs includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer, at least one part of the light emitting layer being formed between adjacent micro-LEDs. the micro-LED chip further comprises a metal layer formed on the light emitting layer between the adjacent micro-LEDs. | 2022-06-30 |
20220209060 | MICRO-LED STRUCTURE AND MICRO-LED CHIP INCLUDING SAME - A micro-LED chip includes multiple micro-LEDs. At least one micro-LED includes: a first type conductive layer; a second type conductive layer stacked on the first type conductive layer; and a light emitting layer formed between the first type conductive layer and the second type conductive layer. The light emitting layer extends along a horizontal level from a top edge of the first type conductive layer and from a bottom edge of the second type conductive layer, such that an edge of the light emitting layer does not contact the top edge of the first type conductive layer and the bottom edge of the second type conductive layer, and the bottom edge of the second type conductive layer is aligned with the top edge of the first type conductive layer. The micro-LED chip further includes a metal layer formed on the light emitting layer between adjacent micro-LEDs. | 2022-06-30 |
20220209061 | METHODS FOR FORMING LIGHT EMITTING DIODES - Methods for forming light emitting diodes (LEDs) that leverage cavity profiles and induced stresses to alter emitted wavelengths of the LEDs. In some embodiments, the method includes forming a cavity on a substrate where the cavity has a cavity profile that is configured to accept an emitter pixel structure for an LED, forming at least one passivation layer in the cavity, and forming at least one optical layer in the cavity on at least a portion of one of the at least one passivation layer. The at least one optical layer is configured to increase a lumen output of the emitter pixel structure. The method further includes forming the emitter pixel structure in the cavity on the at least one optical layer of the emitter pixel structure where the cavity profile is configured to adjust an emitted light wavelength of the emitter pixel structure. | 2022-06-30 |
20220209062 | Composite Substrate, Light Emitting Element, and Methods for Manufacturing Composite Substrate and Light Emitting Element - Provided are a light emitting device having a support layer having a surface with a three-dimensional shape, a light emitting functional layer formed on the surface with a three-dimensional shape of the support layer, and a translucent electrode layer provided on a side of the light emitting functional layer opposite to the support layer. The support layer functions as a reflective electrode, and a light emitting functional layer formed on the surface with a three-dimensional shape of the support layer. The light emitting functional layer has two or more layers composed of semiconductor single crystal grains. Each of the two or more layers has a single crystal structure in a direction approximately normal to the surface with a three-dimensional shape. | 2022-06-30 |
20220209063 | ULTRA-THIN LED ELEMENT AND INKJET INK AND LIGHT SOURCE INCLUDING THE SAME - The present invention relates to a light-emitting diode (LED) element, and more particularly, to an ultra-thin LED element, and inkjet ink and a light source including the same. | 2022-06-30 |
20220209064 | EPITAXY SUBSTRATE AND EPITAXIAL WAFER STRUCTURE - An epitaxy substrate including a substrate and an aluminum nitride layer is provided. The substrate has a first surface and a second surface opposite to each other. The substrate has a ring-shaped protrusion on the edge of the second surface. The aluminum nitride layer is disposed on the first surface of the substrate. An epitaxial wafer structure is also provided. | 2022-06-30 |
20220209065 | MICRO-SIZED FACE-UP LED DEVICE WITH MICRO-HOLE ARRAY AND PREPARATION METHOD THEREOF - The present invention discloses a micro-sized face-up LED device with a micro-hole array and preparation method thereof. The LED device is prepared based on a GaN-based epitaxial layer and includes a GaN-based epitaxial layer, a current spreading layer, a P electrode, an N electrode and a passivation layer; the GaN-based epitaxial layer including a substrate, an N-type CaN layer, i.e., an N-GaN layer, a multiple quantum well layer (MQW), and a P-type GaN layer, i.e., a P-GaN layer; and the N-GaN layer including an etched exposed N-GaN layer and an etched formed N-GaN layer. The present invention improves luminescence efficiency while ensuring the device modulation bandwidth; and after the micro-hole array is etched by ICP, a sample continues to be etched by using the current spreading layer etching liquid to prevent the leakage caused by the expansion of the current spreading layer in the etching process. | 2022-06-30 |
20220209066 | ENGINEERED SUBSTRATE ARCHITECTURE FOR INGAN RED MICRO-LEDS - A light emitting diode (LED) device includes a substrate and a plurality of mesa structures. Each mesa structure includes a layer of a first semiconductor material, a porous layer of the first semiconductor material on the layer of the first semiconductor material, and a layer of a second semiconductor material on the porous layer. The porous layer is characterized by an areal porosity ≥15%. The second semiconductor material is characterized by a lattice constant greater than a lattice constant of the first semiconductor material. Each mesa structure also includes an active region on the layer of the second semiconductor material and configured to emit red light, a p-contact layer on the active region, a dielectric layer on sidewalls of the p-contact layer and the active region, and an n-contact layer in physical contact with at least a portion of sidewalls of the layer of the second semiconductor material. | 2022-06-30 |
20220209067 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD OF MANUFACTURING SAME - A nitride semiconductor light emitting element includes: n-side and p-side nitride semiconductor layers; and an active layer. The active layer includes a plurality of well layers and a plurality of barrier layers. The plurality of well layers include first well layers, and second well layers positioned closer to the p-side nitride semiconductor layer than the first well layers. At least one of the plurality of barrier layers positioned between the first well layers and at least one of the plurality of barrier layers positioned between the second well layers respectively include a first barrier layer containing an n-type impurity, and a second barrier layer, wherein a concentration of the n-type impurity in the second barrier layer is lower than a concentration of the n-type impurity in the first barrier layer, and wherein the second barrier layer is positioned closer to the p-side nitride semiconductor layer than the first barrier layer. | 2022-06-30 |
20220209068 | DISPLAY PANEL AND DISPLAY DEVICE - Embodiments of the present disclosure relate to a display panel and a display device. The display panel comprises a substrate including a first display area and a second display area each having a plurality of sub-pixels, wherein the number of sub-pixels per unit area in the first display area is less than the number of sub-pixels per unit area in the second display area; a transistor layer disposed over the substrate and including a plurality of transistors; a planarization layer over the transistor layer; a light emitting element layer including a common electrode including a plurality of holes in the first display area, disposed over the planarization layer, and including a plurality of light emitting elements; and an antenna comprising a first antenna electrode disposed in the transistor layer and a second antenna electrode disposed over the first antenna electrode, disposed in the first display area and at least a part of which overlaps the plurality of holes. In the present disclosure, the reception rate of the antenna is improved. | 2022-06-30 |
20220209069 | DISPLAY DEVICE - A display device comprises a first electrode disposed on a substrate, a second electrode disposed on the substrate and spaced apart from the first electrode, light emitting elements having ends disposed on the first electrode and the second electrode, a third electrode disposed on the substrate, and a fourth electrode disposed on the substrate and spaced apart from the third electrode, and semiconductor elements having ends disposed on the third electrode and the fourth electrode, wherein the light emitting elements each include a first semiconductor layer, a second semiconductor layer, and a light emitting layer disposed between the first semiconductor layer and the second semiconductor layer, and the semiconductor elements and the first semiconductor layer of the light emitting elements includes a same material. | 2022-06-30 |
20220209070 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREFOR - A display device comprises a first electrode, a first insulating layer disposed on the first electrode, a second electrode disposed on the first insulating layer, at least a part of the second electrode facing the first electrode in a first direction, one or more first light-emitting elements disposed between the first electrode and the second electrode, the one or more first light-emitting elements extending in a direction, wherein the first insulating layer partially encompasses the outer surface of the one or more first light-emitting element, and the extending direction of at least one of the one or more first light-emitting element is parallel to the first direction. | 2022-06-30 |
20220209071 | DISPLAY DEVICE AND MANUFACTURING METHOD THEREOF - A display device includes a substrate including pixels; a first electrode and a second electrode that are spaced apart from each other on the substrate; a light emitting element disposed between the first electrode and the second electrode; a first connection electrode electrically contacting the first electrode and a first end of the light emitting element; a second connection electrode electrically contacting the second electrode and another end of the light emitting element; and an organic pattern disposed between the first connection electrode and the second connection electrode and on the light emitting element. The organic pattern tapers toward the light emitting element. | 2022-06-30 |
20220209072 | LIGHT-EMITTING DEVICE AND DISPLAY DEVICE USING THE SAME - A light-emitting device and a display device using the same are disclosed. The light-emitting device improves the reliability of a process of disposing light-emitting devices. The light-emitting device is configured to ensure electrical connections even if the light-emitting device is inverted while being disposed on a substrate. The light-emitting device includes an n-type semiconductor layer and a p-type semiconductor layer. N-type electrodes and p-type electrodes are disposed on both sides of top and bottom surfaces of the light-emitting device. Contact holes are provided to electrically connect one of the n-type electrodes to the n-type semiconductor layer and one of the p-type electrodes to the p-type semiconductor layer. When the light-emitting device is inverted while being disposed on a substrate, the light-emitting device operates ordinarily, thereby reducing the defect rate of a display device. | 2022-06-30 |
20220209073 | METHOD FOR PRODUCING AN OPTOELECTRONIC COMPONENT AND OPTOELECTRONIC COMPONENT - A method for producing an optoelectronic component is described with the steps of providing monomeric structural units, providing nanoparticles in a liquid medium, mixing the monomeric structural units and the nanoparticles in the liquid medium so that a starting sol is formed, introducing an acid into the starting sol to adjust a pH value, at least partial condensation of the monomeric structural units to form a network, wherein the nanoparticles are at least partially covalently bonded to the network, so that a sol-gel material is formed, applying the sol-gel material to a semiconductor chip, curing the sol-gel material to form a coating material. Furthermore, an optoelectronic component is specified. | 2022-06-30 |
20220209074 | LIGHT-EMITTING FILM, LIGHT-EMITTING FILM ARRAY, MICRO LIGHT EMITTING DIODE ARRAY, AND MANUFACTURING METHOD THEREOF - Embodiments of the present invention provide a light-emitting film, a light-emitting film array, a micro-light emitting diode (LED) array, and their manufacturing methods. In one embodiment, epitaxial layers are formed on a substrate, and a conversion film is formed on a corresponding epitaxial layer. Pixels can be defined through lithography with a very small pixel size. A mass transfer is unnecessary for this method. The produced light-emitting films and the conversion films are homogeneous films and are insoluble in water, and the manufacturing steps can be simplified due to the waterproofing function of the films. | 2022-06-30 |
20220209075 | WHITE LIGHT EMITTING DEVICE AND LIGHTING APPARATUS - A white light emitting device is provided. The white light emitting device includes a blue light emitting diode configured to emit blue light having a peak wavelength in a first range of 440 nm to 455 nm; a first wavelength conversion material, based on being excited by the blue light, emits first light having a peak wavelength in a second range of 535 nm to 550 nm and a full width at half maximum (FWHM) of 60 nm or less; and a second wavelength conversion material, based on being excited by the blue light, emits second light having a peak wavelength in a third range of 620 nm to 660 nm, wherein a melanopic photopic ratio of white light emitted from the white light emitting device is 0.65 or less, and a color rendering index (CRI) of the white light is 80 or more. | 2022-06-30 |
20220209076 | WAVELENGTH CONVERSION MEMBER, LIGHT EMITTING DEVICE, AND METHOD FOR PRODUCING WAVELENGTH CONVERSION MEMBER - A wavelength conversion member containing a fluorescent material having, for example, a perovskite-type structure maintained with high light emission intensity; a light emitting device; and a method for producing a wavelength conversion member. The wavelength conversion member includes a translucent member containing a resin, a wavelength conversion layer containing a fluorescent material having, for example, a perovskite-type structure, and a composition of ABX | 2022-06-30 |
20220209077 | LIGHT-EMITTING DEVICE AND HEAD LAMP FOR VEHICLES INCLUDING THE LIGHT EMITTING DEVICE - A light-emitting device is provided. The light-emitting device includes a plurality of first light-emitting structures provided in a first light-emitting pixel region; a plurality of second light-emitting structures provided in a second light-emitting pixel region adjacent to the first light-emitting pixel region; a barrier wall structure defining a plurality of regions in the first light-emitting pixel region and a single region in the second light-emitting pixel region; a first fluorescent layer provided in the plurality of regions; and a second fluorescent layer provided in the single region. The first fluorescent layer and the second fluorescent layer have different shapes. | 2022-06-30 |
20220209078 | LIGHT EMITTING DEVICE - A light emitting device includes: a first light-emitting element; a second light-emitting element; a photodetector having a light-receiving surface at an upper face thereof, the light-receiving surface including: a first light-receiving region configured to receive a portion of light emitted from the first light-emitting element, and a second light-receiving region configured to receive a portion of light emitted from the second light-emitting element; and at least one lens member having: at least one incident surface on which a portion of the light emitted from the first light-emitting element and/or a portion of the light emitted from the second light-emitting element are incident, and at least one exiting surface through which the portion of the light incident on the incident surface is emitted. In a top view, the lens member is disposed so as to overlap the upper face of the photodetector in part or in whole. | 2022-06-30 |
20220209079 | LIGHT-EMITTING MODULE AND METHOD OF MANUFACTURING LIGHT-EMITTING MODULE - A light-emitting module includes: a plurality of light-emitting elements; a first substrate having an upper surface that includes an element mounting region on which the light-emitting elements are mounted, the first substrate including a plurality of first terminals; a second substrate having an upper surface that includes a substrate mounting region on which the first substrate is mounted, the second substrate including a plurality of second terminals; a plurality of wires each connected to corresponding ones of the first terminals and the second terminals; a light-shielding covering member disposed outward of the element mounting region so as to cover the plurality of wires; and a light-transmissive first projection disposed along the element mounting region between the element mounting region and the first terminals so as to be in contact with the covering member. | 2022-06-30 |
20220209080 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, a light emitting element, and a light reflecting member. The substrate includes a pair of connection terminals on a first main surface. The light emitting element is connected to the connection terminals by a molten material. The light reflecting member covers the light emitting element. The connection terminals each has a protruding portion at a position connected to the light emitting element over the first main surface of the substrate, the protruding portion protruding toward the light emitting element. The molten material covers a side surface of the protruding portion of each of the connection terminals. The protruding portion of each of the connection terminals, the molten material, and a space between the substrate and the light emitting element are embedded by the light reflecting member. | 2022-06-30 |
20220209081 | LED MODULE - An LED module has a first layer including a first plane, an LED chip arranged on the first plane, a second layer surrounding the LED chip and including a convex part on the first plane, and a third layer arranged outside the LED chip and overlapping an upper surface of the first layer, a side surface of the second layer, and a part of the upper surface of the second layer. In the LED module, a height of the convex part of the second layer is lower than a height of the upper surface of the LED chip, and the first layer, the second layer and the third layer include conductive films. | 2022-06-30 |
20220209082 | METHOD FOR TRANSFERRING CHIPS AND METHOD FOR MANUFACTURING LED DISPLAY - A method for transferring chips and a method for manufacturing an LED display are introduced. The method for manufacturing the LED display includes the method for transferring chips. The method for transferring chips includes providing a carrier substrate on which multiple LED chips are carried; providing a target substrate on which wires capable of forming circuits with the LED chips are disposed; transferring the LED chips carried on the carrier substrate onto the wires; galvanizing the wires to trigger at least partial of the LED chips to generate light by the circuits formed; checking the LED chips forming the circuit and fixing the LED chips generating light on the wire; and removing LED chips which fail to generate light. | 2022-06-30 |
20220209083 | ELECTRONIC DEVICE - An electronic device including a substrate, an electronic unit, a data line, a control unit, a test pad and a test switch element is provided by the present disclosure. The substrate includes a first surface and a second surface opposite to the first surface, wherein the first surface includes an active area. The electronic unit is disposed on the substrate and located in the active area. The data line is disposed on the substrate. The control unit is disposed on the substrate and located in the active area, and the control unit is electrically connected between the electronic unit and the data line. The test pad is disposed on the second surface of the substrate. The test switch element is disposed on the substrate and located in the active area, and the test switch element is electrically connected between the data line and the test pad. | 2022-06-30 |
20220209084 | LED MODULE AND DISPLAY DEVICE HAVING LED MODULE - An LED module includes a first electrode, a second electrode arranged isolated from the first electrode, a first bump on the first electrode, a second bump on the second electrode, a protrusion between the first electrode and the second electrode, and an LED chip having a first pad electrode and a second pad electrode. The protrusion has insulating properties, the first pad electrode of the LED chip is disposed opposite the first electrode, the second pad electrode is disposed opposite the second electrode, the first pad electrode is connected to the first electrode through the first bump, and the second pad electrode is connected to the second electrode through the second bump. | 2022-06-30 |
20220209085 | LIGHT EMITTER MOUNTING BOARD AND DISPLAY DEVICE INCLUDING LIGHT EMITTER MOUNTING BOARD - A light emitter mounting board for improving light extraction efficiency includes an insulating substrate, an electrode layer, a resin layer, a coating layer, and a reflective electrode. The resin layer is located on the electrode layer and has a through-hole portion extending in a thickness direction. The coating layer covers a surface of the resin layer and an inner peripheral surface of the through-hole portion. The coating layer includes an in-hole portion covering the inner peripheral surface and having a lateral thickness gradually increasing from the surface of the resin layer toward the electrode layer. The reflective electrode extends at least on a surface of the in-hole portion of the coating layer and on an exposed portion of a surface of the electrode layer. | 2022-06-30 |
20220209086 | Tube Lamp with Leadframe - A light fixture has a translucent tubular bulb. At least one end cap is located at one end of the translucent tubular bulb. A light engine is disposed in the translucent tubular bulb. The light engine has a leadframe on which a plurality of semiconductor light elements is arranged. The fixture may include an electronic driver. The electronic driver includes a plurality of electronic components. At least one of the plurality of electronic components is arranged inside the transparent tubular bulb. | 2022-06-30 |
20220209087 | BEZEL-FREE DISPLAY TILE WITH EDGE-WRAPPED CONDUCTORS AND METHODS OF MANUFACTURE - Display tiles comprising pixel elements on a first surface of a substrate connected by an electrode, a driver located opposite the first surface, and a connector wrapped around an edge surface of the substrate connecting the driver to the pixel elements. Displays comprised of display tiles and methods of manufacturing display tiles and displays are also disclosed. | 2022-06-30 |
20220209088 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package includes a first molding member surrounding a heat dissipation frame, a first electrode frame, and a second electrode frame; a first semiconductor light emitting device on the heat dissipation frame and having first and second pads; a second semiconductor light emitting device on the heat dissipation frame and having first and second pads; a wavelength conversion layer on the first and second semiconductor light emitting structures; a first bonding wire connected to the first pad of the first semiconductor light emitting device and the first electrode frame; a second bonding wire connected to the second pad of the second semiconductor light emitting device and the second electrode frame; and an inter-chip bonding wire connecting the second pad of the first semiconductor light emitting device to the first pad of the second semiconductor light emitting device. | 2022-06-30 |
20220209089 | SYSTEM FOR AUTOMATICALLY PRODUCING LED LAMP CAP - A system for automatically producing a LED lamp cap, including a first feeding device, a second feeding device, and a third feeding device. The first feeding device is configured to lead a heat sink base out. The second feeding device is configured to lead a reflection bowl out to an outlet of the first feeding device and assemble the reflection bowl with the heat sink base. The third feeding device is configured to feed a LED lamp bead to the outlet of the first feeding device and assemble the LED lamp bead with the heat sink base. A fourth feeding device for feeding a lamp tube is arranged on a side of the first feeding device. A positioning-mounting mechanism is arranged on a side of the fourth feeding device and is configured to assemble a lamp tube with the heat sink base. | 2022-06-30 |
20220209090 | THERMOELECTRIC DEVICE WITH ELECTRICALLY CONDUCTIVE COMPLIANT MECHANISM CONNECTOR - Thermoelectric devices have an electrically conductive connector for connecting thermoelectric modules. The electrically conductive connector is a compliant mechanism having a first connecting region and a second connecting region that are rigid bodies and an elastically deformable region that is a flexible member positioned between the first and second connecting regions. The electrically conductive compliant mechanism connector enables facile manufacture and assembly of thermoelectric devices of various sizes and shapes that are conformable to irregularly shaped objects and body parts. | 2022-06-30 |
20220209091 | AEROSOL JET PRINTING AND SINTERING OF THERMOELECTRIC DEVICES - Methods, ink compositions, and 3D conformal printed flexible films. The method may include aerosol jet printing a thermoelectric ink composition, followed by photonic or other sintering of the ink to remove surfactant included therein, and to convert the thermoelectric nanoparticles of the ink composition into a dense structure capable of charge carrier transport. The ink compositions may be solution-processed semimetal-chalcogenides (e.g., Te containing materials) in a suitable carrier (e.g., polyol(s), alcohol(s), etc.). A surfactant (e.g., PVP) may be present in the ink. Within seconds of photonic sintering, the electrical conductivity of the printed film is dramatically increased from non-conductive to a value on the order of at least 1×10 | 2022-06-30 |
20220209092 | THERMOELECTRIC CONVERSION ELEMENT, THERMOELECTRIC CONVERSION MODULE, JOINING MATERIAL, AND METHOD FOR MANUFACTURING THERMOELECTRIC CONVERSION ELEMENT - A thermoelectric conversion element of the present disclosure includes a thermoelectric conversion layer, a first metal layer, a second metal layer, a first joining layer, and a second joining layer. At least one of the first joining layer and the second joining layer includes a second alloy. A content of Mg in the second alloy is 84 atm % or more and 89 atm % or less, a content of Cu in the second alloy is 11 atm % or more and 15 atm % or less, and a content of an alkaline earth metal in the second alloy is 0 atm % or more and 1 atm % or less. | 2022-06-30 |
20220209093 | NOVEL THERMOCOUPLE DEVICE - A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant. | 2022-06-30 |
20220209094 | THERMOELECTRIC POWER GENERATION MODULE MOUNTING SUBSTRATE - A thermoelectric power generation module mounting substrate includes: a printed substrate having a heat transfer through-hole penetrating a first surface and a second surface opposite to the first surface, and being in contact with a housing on the second surface; and a thermoelectric power generation module mounted on the printed substrate in contact with the first surface. | 2022-06-30 |
20220209095 | PIEZOELECTRIC ELEMENT AND METHOD FOR MANUFACTURING THE SAME - A piezoelectric element includes a piezoelectric layer, a first electrode layer, and a second electrode layer. The piezoelectric layer includes first and second surfaces opposed to each other. The first electrode layer is located on the first surface. The second electrode layer is located on the second surface. At least a portion of the second electrode layer faces the first electrode layer with the piezoelectric layer interposed therebetween. The second electrode layer mainly includes silicon. The piezoelectric layer is monocrystalline. | 2022-06-30 |
20220209096 | VIBRATION DEVICE - The vibration device includes a piezoelectric element having a connection terminal exposed from a main surface of the piezoelectric element, a first resin layer having conductivity and covering the connection terminal of the piezoelectric element to be electrically connected to the connection terminal, a wiring member overlapping the main surface of the piezoelectric element to cover the first resin layer, including a wire electrically connected to the first resin layer, and extending beyond one end of the piezoelectric element when viewed in a thickness direction of the piezoelectric element, and a second resin layer integrally covering the main surface of the piezoelectric element and the wiring member. The second resin layer includes a first layer in direct contact with the piezoelectric element and the wiring member, and a second layer covering the piezoelectric element and the wiring member via the first layer. | 2022-06-30 |
20220209097 | PIEZOELECTRIC ELEMENT - A piezoelectric element includes a laminate, a plurality of internal electrodes, and a plurality of external electrodes. The laminate includes a plurality of piezoelectric layers that is laminated. The laminate includes a pair of main faces facing away from each other in a laminating direction of the plurality of piezoelectric layers, a pair of end faces facing away from each other in a first direction crossing the laminating direction, and a pair of side faces facing away from each other in a second direction crossing the laminating direction and the first direction. The plurality of internal electrodes is disposed in the laminate to be laminated in the laminating direction. Each of the pair of main faces, the pair of end faces, and the pair of side faces is a polished surface that is polished. Each ridge portion of the laminate has a rounded chamfered shape. | 2022-06-30 |
20220209098 | PIEZOELECTRIC ELEMENT - A piezoelectric element includes a piezoelectric layer, a first electrode layer, a second electrode layer, and a connecting electrode. The piezoelectric layer includes first and second surfaces, and a through-hole. The second electrode layer is adjacent to the second surface of the piezoelectric layer. The second electrode layer faces the through-hole. The second electrode layer includes silicon as a major component. The connecting electrode is on a connecting surface of the second electrode layer, and the connecting surface faces the through-hole. The connecting electrode is made of a metal. A surface roughness of the connecting surface is greater than a surface roughness of a major surface. The major surface is a portion, other than the connecting surface, of a surface of the second electrode layer, and the surface is adjacent to the piezoelectric layer. | 2022-06-30 |
20220209099 | PIEZOELECTRIC ELEMENT - A piezoelectric element includes a laminate and a first internal electrode. The laminate includes a pair of main faces, a pair of end faces, and a pair of side faces. The first internal electrode includes four electrode portions and a connector. The four electrode portions include a first pair of electrode portions and a second pair of electrode portions. The connector connects the first pair of electrode portions. The connector is spaced apart from each of the second pair of electrode portions by a first distance. Each of the four electrode portions includes a main electrode part. The main electrode part is spaced apart from the pair of end faces by a second distance. The main electrode part is spaced apart from the pair of side faces by a third distance. The first distance is longer than each of the second distance and the third distance. | 2022-06-30 |
20220209100 | METHOD OF PREPARING A SOLID SOLUTION CERAMIC MATERIAL HAVING INCREASED ELECTROMECHANICAL STRAIN, AND CERAMIC MATERIALS OBTAINABLE THEREFROM - The present invention relates to a method of preparing a solid solution ceramic material having increased electromechanical strain, as well as ceramic materials obtainable therefrom and uses thereof. In one aspect, the present invention provides a method A method of increasing electromechanical strain in a solid solution ceramic material which exhibits an electric field induced strain derived from a reversible transition from a non-polar state to a polar state; i) determining a molar ratio of at least one polar perovskite compound having a polar crystallographic point group to at least one non-polar perovskite compound having a non-polar crystallographic point group which, when combined to form a solid solution, forms a ceramic material with a major portion of a non-polar state; ii) determining the maximum polarization, P | 2022-06-30 |
20220209101 | SPACER SCHEME AND METHOD FOR MRAM - An MRAM cell has a bottom electrode, a metal tunneling junction, and a top electrode. The metal tunneling junction has a side surface between the bottom electrode and the top electrode. A thin layer on the side surface includes one or more compounds of a metal found in one of the electrodes. The thin layer has a lower conductance than the MTJ. The electrode metal may have been deposited on the side during MTJ patterning and subsequently been reacted to from a compound having a lower conductance than a nitride of the electrode metal. The thin layer may include an oxide deposited over the redeposited electrode metal. The thin layer may include a compound of the electrode metal deposited over the redeposited electrode metal. A silicon nitride spacer may be formed over the thin layer without forming nitrides of the electrode metal. | 2022-06-30 |
20220209102 | SPIN DIODE DEVICES - According to various embodiments, a spin diode device may include a magnetic tunnel junction stack. The magnetic tunnel junction stack may include a lower magnetic layer, a tunnel barrier layer over the lower magnetic layer, and an upper magnetic layer over the tunnel barrier layer. The lower magnetic layer may include a lower magnetic film. The tunnel barrier layer comprising an insulating material. The upper magnetic layer may include an upper magnetic film. Each of the lower magnetic film and the upper magnetic film may have perpendicular magnetic anisotropy. | 2022-06-30 |
20220209103 | VARIABLE RESISTANCE MEMORY DEVICE HAVING AN ANTI-OXIDATION LAYER AND A METHOD OF MANUFACTURING THE SAME - A variable resistance memory device is provided including a plurality of lower electrodes disposed on a substrate. A plurality of variable resistors are disposed on the plurality of lower electrodes. A plurality of upper electrodes are disposed on the plurality of variable resistors. An interlayer insulating layer fills a space in the plurality of variable resistors. An anti-oxidation layer is disposed between the plurality of variable resistors and the interlayer insulating layer. The anti-oxidation layer covers side surfaces of the plurality of variable resistors, and the anti-oxidation layer comprises silicon and/or carbon. | 2022-06-30 |
20220209104 | MAGNETORESISTIVE DEVICES AND METHODS OF FABRICATING MAGNETORESISTIVE DEVICES - A method of manufacturing a magnetoresistive device may comprise forming a first magnetic region, an intermediate region, and a second magnetic region of a magnetoresistive stack above a via; removing at least a portion of the second magnetic region using a first etch; removing at least a portion of the intermediate region and at least a portion of the first magnetic region using a second etch; removing at least a portion of material redeposited on the magnetoresistive stack using a third etch; and rendering at least a portion of the redeposited material remaining on the magnetoresistive stack electrically non-conductive. | 2022-06-30 |
20220209105 | MULTI-LAYER PHASE CHANGE MEMORY DEVICE - A phase change memory (PCM) cell comprises a first electrode comprised of a first electrically conductive material, a second electrode comprised of a second electrically conductive material, a first phase change layer positioned between the first electrode and the second electrode and being comprised of a first phase change material, and a second phase change layer positioned between the first electrode and the second electrode and being comprised of a second phase change material. The first phase change material has a first resistivity, the second phase change material has a second resistivity, and wherein the first resistivity is at least two times the second resistivity. | 2022-06-30 |
20220209106 | PHASE CHANGE MEMORY DEVICE - A phase change memory device includes a bottom conductive line, a dielectric layer, a bottom memory layer, and a top electrode. The dielectric layer covers the bottom conductive line. The bottom memory layer is in the dielectric layer and is electrically connected to the bottom conductive line. The bottom memory layer includes a tapered portion and a neck portion. The tapered portion is over the bottom conductive line and is tapered toward the bottom conductive line. The neck portion is directly between the tapered portion and the bottom conductive line. The neck portion has a substantially constant width. The top electrode is over and electrically connected to the bottom memory layer. | 2022-06-30 |
20220209107 | CMOS-COMPATIBLE PROTONIC RESISTIVE DEVICES - Described are CMOS-compatible protonic resistive devices (e.g., processing elements and/or memory elements). In embodiments, a protonic resistive memory can be formed from a proton-sensitive metal oxide channel where the concentration of protons intercalated inside the layer is controlled to modulate its conductivity. The protons can initially be supplied to the material stack by an implantation method. Irradiation techniques can be implemented to increase the concentration and conductivity of protons inside the materials. Some designs can put the active layer and reservoir in direct contact, creating an electrolyte-free device. Designs provide scalable solutions for full-scale Si-integration. | 2022-06-30 |
20220209108 | MEMORY DEVICES AND METHODS FOR FABRICATING MEMORY DEVICES - A memory device may be provided. The memory device may include a first electrode including a first side surface and a second side surface opposite to the first side surface; a passivation layer arranged laterally alongside the first side surface of the first electrode; a switching layer arranged laterally alongside the passivation layer; and a second electrode arranged along the switching layer. | 2022-06-30 |
20220209109 | MEMORY DEVICES AND METHODS OF FORMING MEMORY DEVICES - A memory device may be provided, including a first electrode, an insulating element arranged over the first electrode, a second electrode arranged over the insulating element, a switching layer and a conductive line electrically coupled to the second electrode. Each of the first electrode, the insulating element, and the second electrode may include a first side surface and a second side surface. Centers of the first electrode, the insulating element, and the second electrode may be substantially vertically aligned. The first side surface and the second side surface of the second electrode may be substantially vertically aligned with the first side surface and the second side surface of at least one of the insulating element and the first electrode. The switching layer may be conformal to the first side surfaces and the second side surfaces of the second electrode and the insulating element. | 2022-06-30 |
20220209110 | ELECTRONIC DEVICE AND METHOD FOR FABRICATING THE SAME - An electronic device comprising a semiconductor memory including a plurality of memory cells is provided. Each of the plurality of memory cells includes: a first electrode layer; a variable resistance layer disposed over the first electrode layer; a second electrode layer disposed over the variable resistance layer; and an interface electrode layer interposed between the first electrode layer and the variable resistance layer or between the second electrode layer and the variable resistance layer. The interface electrode layer includes a porous metal-containing layer. | 2022-06-30 |
20220209111 | METAL LANDING ON TOP ELECTRODE OF RRAM - Some embodiments relate to an integrated circuit including one or more memory cells arranged over a semiconductor substrate between an upper metal interconnect layer and a lower metal interconnect layer. A memory cell includes a bottom electrode disposed over the lower metal interconnect layer, a data storage or dielectric layer disposed over the bottom electrode, and a top electrode disposed over the data storage or dielectric layer. An upper surface of the top electrode is in direct contact with the upper metal interconnect layer without a via or contact coupling the upper surface of the top electrode to the upper metal interconnect layer. Sidewall spacers are arranged along sidewalls of the top electrode, and have bottom surfaces that rest on an upper surface of the data storage or dielectric layer. | 2022-06-30 |
20220209112 | RESISTIVE RANDOM ACCESS MEMORY (RRAM) STRUCTURE AND FORMING METHOD THEREOF - A resistive random access memory (RRAM) structure includes a RRAM cell, spacers and a dielectric layer. The RRAM cell is disposed on a substrate. The spacers are disposed beside the RRAM cell, wherein widths of top surfaces of the spacers are larger than or equal to widths of bottom surfaces of the spacers. The dielectric layer blanketly covers the substrate and sandwiches the RRAM cell, wherein the spacers are located in the dielectric layer. A method for forming said resistive random access memory (RRAM) structure is also provided. | 2022-06-30 |
20220209113 | MITIGATING MOISTURE DRIVEN DEGRADATION OF SILICON DOPED CHALCOGENIDES - A method for mitigating moisture driven degradation of silicon doped chalcogenides includes placing a silicon doped chalcogenide composition in a process chamber, passivating dangling silicon bonds of the silicon doped chalcogenide composition by flooding the process chamber with forming gas or with hydrogen plasma, purging the forming gas or the hydrogen plasma from the process chamber, and removing the passivated silicon doped chalcogenide composition from the process chamber. | 2022-06-30 |
20220209114 | NANOPARTICLE INK COMPOSITION, LIGHT-EMITTING DEVICE, AND METHOD OF MANUFACTURING THE LIGHT-EMITTING DEVICE - A nanoparticle ink composition includes: a solvent; and one or more inorganic nanoparticles substantially dispersed in the solvent, wherein the inorganic nanoparticles include one or more quantum dots or a metal oxide having a diameter of about 20 nm or less, and the nanoparticle ink composition has an Ohnesorge number of about 0.1 to about 0.2. | 2022-06-30 |
20220209115 | ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - An organic light emitting diode and an organic light emitting device including the same are described. The organic light emitting diode can include a first electrode, a second electrode facing the first electrode, and a first emitting part including a red emitting material layer and a first hole transporting layer and positioned between the first and second electrodes. The red emitting material layer can include a first red host and a red dopant, and the first hole transporting layer can include a hole transporting material and is positioned between the first electrode and the red emitting material layer. At least one of the first red host and the hole transporting material is a compound of the following Formula: | 2022-06-30 |
20220209116 | LIGHT EMITTING DEVICE - A light emitting device according to an embodiment includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer, and a second electrode disposed on the electron transport region. The emission layer includes a fused polycyclic compound represented by Formula 1, which is defined in the specification. | 2022-06-30 |
20220209117 | ORGANIC ELECTROLUMINESCENCE DEVICE AND POLYCYCLIC COMPOUND FOR ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device of one or more embodiments includes a first electrode, a hole transport region disposed on the first electrode, an emission layer disposed on the hole transport region, an electron transport region disposed on the emission layer and a second electrode disposed on the electron transport region, wherein the first electrode and the second electrode each independently includes at least one selected among Ag, Mg, Cu, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, LiF/Ca, LiF/Al, Mo, Ti, In, Sn, Zn, compounds thereof, mixtures thereof, and oxides thereof, and the emission layer includes a polycyclic compound represented by Formula 1, thereby showing long life and high efficiency: | 2022-06-30 |
20220209118 | LUMINESCENT COMPOUND, ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE HAVING THE COMPOUND - The present disclosure relates to a luminescent compound having the following structure of Formula 1, an organic light emitting diode (OLED) and an organic light emitting device that includes the luminescent compound. The OLED and the organic light emitting device including the luminescent compound can improve their luminous efficiency and luminous lifespan. | 2022-06-30 |
20220209119 | ORGANIC LIGHT EMITTING DEVICE - The present disclosure relates to an organic light emitting device. In particular, the present disclosure relates to an organic light emitting diode and an organic light emitting device each of which includes at least one emitting material layer including a boron-based dopant and an anthracene-based host substituted with at least one deuterium, at least one electron blocking layer including an amine-based compound substituted with at least one polycyclic aryl, and optionally at least one hole blocking layer including an azine-based or a benzimidazole-based compound. The organic light emitting diode and the organic light emitting device has improved luminous efficiency and enhanced luminous lifespan. | 2022-06-30 |
20220209120 | ORGANIC LIGHT EMITTING DEVICE - The present disclosure relates to an organic light emitting device that includes a substrate; and an organic light emitting diode positioned on the substrate and including a first electrode; a second electrode facing the first electrode; a first emitting material layer including a first dopant of a boron derivative and a first host of an anthracene derivative and positioned between the first and second electrodes; a first electron blocking layer including an electron blocking material of amine derivative and positioned between the first electrode and the first emitting material layer; and a first hole blocking layer including a hole blocking material and positioned between the second electrode and the first emitting material layer, wherein the first host is deuterated. | 2022-06-30 |
20220209121 | ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - An organic light emitting diode includes a first electrode; a second electrode facing the first electrode; and a first emitting material layer including a first compound, a second compound and a third compound and positioned between the first and second electrodes, wherein an onset wavelength of the second compound is greater than an onset wavelength of the first compound and is smaller than an onset wavelength of the third compound, wherein a maximum emission wavelength of the second compound is smaller than a maximum emission wavelength of the first compound, and a maximum emission wavelength of the third compound is equal to or smaller than a maximum emission wavelength of the first compound, and wherein a full width at half maximum of each of the second and third compounds is smaller than a full width at half maximum of the first compound. | 2022-06-30 |
20220209122 | ORGANIC LIGHT EMITTING DEVICE - The present disclosure relates to an organic light emitting device that includes a substrate; and an organic light emitting diode positioned on the substrate and including a first electrode; a second electrode facing the first electrode; a first emitting material layer including a first dopant of a boron derivative and a first host of an anthracene derivative and positioned between the first and second electrodes; a first electron blocking layer including an electron blocking material and positioned between the first electrode and the first emitting material layer; and a first hole blocking layer including a hole blocking material and positioned between the second electrode and the first emitting material layer, wherein the first host is deuterated. | 2022-06-30 |
20220209123 | EMITTING COMPOUND AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - The present disclosure relates to an emitting compound and organic light emitting device including the same, more specifically, relates to an emitting compound of following and an organic light emitting diode and an organic light emitting device each including the emitting compound. | 2022-06-30 |
20220209124 | ORGANIC DEVICE, GROUP OF MASKS, MASK, AND MANUFACTURING METHOD FOR ORGANIC DEVICE - An organic device may include a substrate, first electrodes disposed on the substrate, organic layers respectively disposed on the first electrodes, and a second electrode disposed on the organic layers. When the organic device is viewed in a direction normal to the substrate, the organic device may include a first display area that includes the second electrode at a first occupancy, and a second display area that includes the second electrode at a second occupancy lower than the first occupancy. The second display area may include the second electrode, and transmission areas each surrounded by the second electrode in plan view. The transmission areas may include a first transmission area, and a second transmission area adjacent to the first transmission area via the second electrode. The first transmission area may have a first shape, and the second transmission area may have a second shape different from the first shape. | 2022-06-30 |
20220209125 | ELECTRON-ACCEPTING COMPOUND AND COMPOSITION FOR CHARGE-TRANSPORTING FILM, AND LUMINESCENT ELEMENT USING SAME - The present invention provides with an electron-accepting compound having a structure of the following formula (1): | 2022-06-30 |
20220209126 | ORGANIC LIGHT EMITTING DIODE AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - The present disclosure relates to an organic light emitting diode including a first electrode; a second electrode facing the first electrode; a first p-type doping layer between the first and second electrodes; a second p-type doping layer between the first p-type doping layer and the second electrode; a third p-type doping layer between the second p-type doping layer and the second electrode; a first emitting material layer between the first and second p-type doping layers; a second emitting material layer between the second and third p-type doping layers; and a third emitting material layer between the third p-type doping layer and the second electrode, wherein an electrical conductivity of the third p-type doping layer is greater than an electrical conductivity of the first p-type doping layer and is equal to or smaller than an electrical conductivity of the second p-type doping layer. | 2022-06-30 |