26th week of 2016 patent applcation highlights part 70 |
Patent application number | Title | Published |
20160190358 | ELECTRO-CONDUCTIVE PASTE COMPRISING AG PARTICLES WITH A MULTIMODAL DIAMETER DISTRIBUTION IN THE PREPARATION OF ELECTRODES IN MWT SOLAR CELLS - The invention relates to an electro-conductive paste comprising Ag particles with a multimodal diameter distribution in the preparation of electrodes in solar cells, particularly in the preparation of electrodes in MWT solar cells, particularly in the preparation of the metal wrap through, or plug, electrode in such solar cells. In particular, the invention relates to a solar cell precursor, a process for preparing a solar cell, a solar cell and a module comprising solar cells. The invention relates to a solar cell precursor at least comprising as precursor parts: i) a wafer with at least one hole with a Si surface; ii) an electro-conductive paste at least comprising as paste constituents: a) metallic particles; b) an inorganic reaction system; c) an organic vehicle; and d) an additive; comprised by the hole, wherein the metallic particles have a multimodal distribution of particle diameter. | 2016-06-30 |
20160190359 | CONDUCTIVE PASTES OR INKS COMPRISING NANOMETRIC CHEMICAL FRITS - The present invention relates to a conductive paste or ink, which may be used to form conductive elements on the surface of a substrate, for example an electrode of a solar cell. The present invention also relates to a solar cell in which the upper electrode exposed to the sun is obtained by using said conductive paste or ink and a method for forming a conductive element on a substrate using said conductive paste or ink. | 2016-06-30 |
20160190360 | COMPOSITION FOR SOLAR CELL ELECTRODE AND ELECTRODE PREPARED USING THE SAME - A composition for solar cell electrodes and a solar cell electrode, the composition including silver powder; glass frit that contains tellurium, the glass frit having a glass transition temperature (Tg) of about 150° C. to about 300° C.; an organosilane compound; and an organic vehicle. | 2016-06-30 |
20160190361 | GLASS COMPOSITIONS FOR ELECTROCONDUCTIVE PASTE COMPOSITIONS - This invention relates to glass compositions for use in forming an electroconductive paste composition. In one aspect of the invention, an electroconductive paste composition utilized in solar panel technology includes conductive metallic particles, an organic vehicle, and a glass composition comprising tellurium oxide (TeO | 2016-06-30 |
20160190362 | GLASS COMPOSITION FOR ELECTROCONDUCTIVE PASTE COMPOSITIONS - This invention relates to glass compositions for use in forming an electroconductive paste composition. In one aspect of the invention, an electroconductive paste composition utilized in solar panel technology includes conductive metallic particles, an organic vehicle, and a glass composition comprising tellurium oxide (TeO | 2016-06-30 |
20160190363 | SOLAR CELL MODULE AND METHOD FOR MANUFACTURING THE SAME - A solar cell module and a method for manufacturing the same are disclosed. The method for manufacturing the solar cell module includes applying a low melting point metal on an electrode included in each of a plurality of solar cells, melting the low melting point metal to form a contact layer on the electrode, generating an ultrasonic vibration in the contact layer to remove a surface oxide layer formed on a surface of the electrode, melting a surface metal of the electrode and the contact layer to form a metal connection layer on the surface of the electrode, and connecting the metal connection layer to an interconnector. | 2016-06-30 |
20160190364 | SEED LAYER FOR SOLAR CELL CONDUCTIVE CONTACT - Seed layers for solar cell conductive contacts and methods of forming seed layers for solar cell conductive contacts are described. For example, a solar cell includes a substrate. An emitter region is disposed above the substrate. A conductive contact is disposed on the emitter region and includes a conductive layer in contact with the emitter region. The conductive layer is composed of aluminum/silicon (Al/Si) particles having a composition of greater than approximately 15% Si with the remainder Al. In another example, a solar cell includes a substrate having a diffusion region at or near a surface of the substrate. A conductive contact is disposed above the diffusion region and includes a conductive layer in contact with the substrate. The conductive layer is composed of aluminum/silicon (Al/Si) particles having a composition of greater than approximately 15% Si with the remainder Al. | 2016-06-30 |
20160190365 | PHOTOVOLTAIC SOLAR MODULE METALLIZATION AND SHADE MANAGEMENT CONNECTION AND FABRICATION METHODS - Solar cell structures having improved efficiency, distributed shade management, and reduced fabrication complexity. | 2016-06-30 |
20160190366 | TRENCH ISOLATION FOR MONOLITHICALLY ISLED SOLAR PHOTOVOLTAIC CELLS AND MODULES - Fabrication methods and structures are provided for the formation of monolithically isled back contact back junction solar cells. In one embodiment, base and emitter contact metallization is formed on the backside of a back contact back junction solar cell substrate. A trench stop layer is formed on the backside of a back contact back junction solar cell substrate and is electrically isolated from the base and emitter contact metallization. The trench stop layer has a pattern for forming a plurality semiconductor regions. An electrically insulating layer is formed on the base and emitter contact metallization and the trench stop layer. A trench isolation pattern is formed through the back contact back junction solar cell substrate to the trench stop layer which partitions the semiconductor layer into a plurality of solar cell semiconductor regions on the electrically insulating layer. | 2016-06-30 |
20160190367 | PACKAGING STRUCTURE OF COLOR TUNABLE SOLAR CELL - A packaging structure of a solar cell includes a first substrate and a first laminating film attached to a back surface of the first substrate. The solar cell, which includes one or more substrates, is attached to a back surface of the first laminating film. A second laminating film is attached to a back surface of the solar cell, and a second substrate is attached to a back surface of the second laminating film. The solar cell includes a light absorption unit color-tuned and a pattern unit with which second substrate is pattern matched. The second substrate is tuned with the same color as the light absorption unit. | 2016-06-30 |
20160190368 | Photovoltaic Device and Method of Making - A photovoltaic device is presented. The photovoltaic device includes a first semiconductor layer, a second semiconductor layer, and an interlayer disposed between the first semiconductor layer and the second semiconductor layer, wherein the inter layer includes gadolinium. Methods of making photovoltaic devices are also presented. | 2016-06-30 |
20160190369 | ADHESIVES FOR ATTACHING WIRE NETWORK TO PHOTOVOLTAIC CELLS - Provided are novel methods of fabricating photovoltaic modules using pressure sensitive adhesives (PSA) to secure wire networks of interconnect assemblies to one or both surfaces of photovoltaic cells. A PSA having suitable characteristics is provided near the interface between the wire network and the cell's surface. It may be provided together as part of the interconnect assembly or as a separate component. The interconnect assembly may also include a liner, which may remain as a part of the module or may be removed later. The PSA may be distributed in a void-free manner by applying some heat and/or pressure. The PSA may then be cured by, for example, exposing it to UV radiation to increase its mechanical stability at high temperatures, in particular at a, for example the maximum, operating temperature of the photovoltaic module. For example, the modulus of the PSA may be substantially increased during this curing operation. | 2016-06-30 |
20160190370 | WAVELENGTH CONVERTING STRUCTURE FOR NEAR-INFRARED RAYS AND SOLAR CELL COMPRISING THE SAME - Provided is a wavelength converting structure for near-infrared rays and a solar cell using the same. More particularly, provided is a novel wavelength converting structure for near-infrared rays using gap plasmon characteristics and up-conversion nanoparticles. When applying the wavelength converting structure for near-infrared rays to a solar cell, it is possible to convert the light within a wavelength range of near-infrared rays into electric energy so that the photoconversion efficiency may be improved. | 2016-06-30 |
20160190371 | HYBRID SOLAR CELL - A hybrid solar cell includes a photovoltaic (PV) cell having an upper grid and lower contact plate with an anode and cathode region in between. A thermoelectric (TE) cell has a top and bottom segmented connector layer with TE elements having pairs of n-doped elements and p-doped elements connected together electrically in series and thermally in parallel by segments of the top or bottom segmented connector layer. An electrically insulating and thermally conducting layer is between the plate and the TE cell. A direct electrical connection is between the cathode region provided by the upper grid or lower plate and segments contacting the n-doped elements, and a direct electrical connection is between the anode region provided by the grid or plate and segments contacting the p-doped elements for the PV cell to power the TE cell and the TE cell to provide active cooling for the PV cell. | 2016-06-30 |
20160190372 | SOLAR COLLECTOR DEVICE - A solar collector device is used for concentrating sunlight rays to a light energy conversion unit to increase entering amount of light of the light energy conversion unit. The light energy conversion unit has a light receiving surface located on a reference plane. The solar collector device includes at least two reflecting devices which are used for reflecting the sunlight rays on the light receiving surface. The two reflecting devices are respectively disposed at two opposite sides of the light receiving surface. The two reflecting devices respectively have a plurality of reflective surfaces which are connected with each other, wherein the reflective surfaces have different inclination angles between each of the reflective surfaces and the reference plane. | 2016-06-30 |
20160190373 | CZTS THIN FILM SOLAR CELL AND MANUFACTURING METHOD THEREOF - A thin film solar cell comprises a metal rear surface electrode layer formed on a substrate, a p-type CZTS light-absorbing layer formed on the electrode layer, an n-type high-resistance buffer layer containing a zinc compound as a material and formed on the p-type CZTS light-absorbing layer, and an n-type transparent electroconductive film formed on the n-type high-resistance buffer layer. When the Cu—Zn—Sn composition ratio (atom ratio) of the p-type CZTS light-absorbing layer is represented by coordinates with the Cu/(Zn+Sn) ratio shown on the horizontal axis and the Zn/Sn ratio shown on the vertical axis, the ratio is within the region formed by connecting point A (0.825, 1.108), point B (1.004, 0.905), point C (1.004, 1.108), point E (0.75, 1.6), and point D (0.65, 1.5), and the Zn/Sn ratio of the p-type CZTS light-absorbing layer surface in the n-type high-resistance buffer layer is 1.11 or less. | 2016-06-30 |
20160190374 | THIN FILM TYPE SOLAR CELL AND FABRICATION METHOD THEREOF - A method of fabricating a solar cell includes forming a doped portion having a first conductive type on a semiconductor substrate, growing an oxide layer on the semiconductor substrate, forming a plurality of recess portions in the oxide layer, further growing the oxide layer on the semiconductor substrate, forming a doped portion having a second conductive type on areas of the semiconductor substrate corresponding to the recess portions, forming a first conductive electrode electrically coupled to the doped portion having the first conductive type, and forming a second conductive electrode on the semiconductor substrate and electrically coupled to the doped portion having the second conductive type, wherein a gap between the doped portions having the first and second conductive types corresponds to a width of the oxide layer formed by further growing the oxide layer. | 2016-06-30 |
20160190375 | HETERO-JUNCTION SOLAR CELL AND MANUFACTURING METHOD THEREOF - A hetero junction solar cell includes a semiconductor substrate, a first n-type buffer layer, a second n-type buffer layer, a first amorphous silicon layer, a second amorphous silicon layer, a first TCO layer and a second TCO layer. The first n-type buffer layer and the second n-type buffer layer are formed respectively on a first surface and a second surface of the semiconductor substrate. The first amorphous silicon layer and the second amorphous silicon layer are formed respectively on the first n-type buffer layer and the second n-type buffer layer. The first TCO layer and the second TCO layer are formed respectively on the first amorphous silicon layer and the second amorphous silicon layer. | 2016-06-30 |
20160190376 | PHOTOVOLTAIC CELL WITH VARIABLE BAND GAP - A Monolithic photovoltaic cell is proposed. Said cell comprises at least one junction. Each one of said at least one junction comprises a base formed by a doped semiconductor material of a first conductivity type and an emitter formed by a doped semiconductor material of a second conductivity type opposed to the first. Said emitter is stacked on the base according to a first direction. The semiconductor material of the base and/or of the emitter of at least one of said at least one junction is a semiconductor material formed by a compound of at least one first element and a second element. The band gap and the lattice constant of said semiconductor material of the base and/or of the emitter depend on the concentration of said first element in said compound with respect to said second element. Said concentration of the first element in said compound with respect to the second element is not uniform along said first direction, being equal to a first value at a lower portion of said base and/or emitter and being equal to a second value lower than the first value at an upper portion of said base and/or emitter. Said upper portion is above said lower portion according to the first direction. | 2016-06-30 |
20160190377 | A HIGH EFFICIENCY STACKED SOLAR CELL - The present disclosure provides a photovoltaic device that has a photon receiving surface and a first single homojunction silicon solar cell. The first single homojunction silicon solar cell comprises two doped silicon portions with opposite polarities and has a first bandgap. The photovoltaic device further comprises a second solar cell structure that has an absorber material with a Perovskite structure and has a second bandgap that is larger than the first bandgap. The photovoltaic device is arranged such that each of the first and second solar cells absorb a portion of the photons that are received by the photon receiving surface. | 2016-06-30 |
20160190378 | INVERTED METAMORPHIC MULTIJUNCTION SOLAR CELL INCLUDING A METAMORPHIC LAYER - A multijunction solar cell includes an upper first solar subcell, a second solar subcell adjacent to the first solar subcell, a third solar subcell adjacent to the second solar subcell, and a graded interlayer adjacent to the third solar subcell. The graded interlayer has a band gap that is greater than the band gap of the third solar subcell and is composed of a compositionally step-graded series of (In | 2016-06-30 |
20160190379 | SIGNAL OUTPUT CIRCUIT - A signal output circuit includes a signal conversion element, a signal output transistor, a first resistor element, a second resistor element, a diode, a malfunction-prevention transistor, and a capacitance-compensating capacitor. The signal output transistor establishes electrical conduction between two conductive terminals when an on signal is supplied to a conduction control terminal via the signal conversion element. The diode is connected in parallel to the second resistor element in a direction in which current flows between a signal output terminal of the signal conversion element and the conduction control terminal of the signal output transistor when an on signal is outputted to the signal output terminal. The malfunction-prevention transistor establishes electrical conduction between two conductive terminals when a current flows through the second resistor element in a direction opposite the direction of the diode. The capacitance-compensating capacitor is connected in parallel to the second resistor element. | 2016-06-30 |
20160190380 | WAFER LEVEL PACKAGING FOR PROXIMITY SENSOR - A proximity sensor includes a semiconductor die, a light emitting assembly, a redistribution layer, and an encapsulating layer. A surface of the semiconductor die includes a sensor area and contact pads. A lens is positioned over the sensor area of the semiconductor die. The light emitting assembly includes a light emitting device having a light emitting area, a lens positioned over the light emitting area, and contact pads that face the redistribution layer. A side of the redistribution layer includes contact pads. Electrical connectors place each of the contact pads of the semiconductor die in electrical communication with a respective one of the contact pads of the redistribution layer. The encapsulating layer is positioned on the redistribution layer and at least partially encapsulates the semiconductor die, the lens over the sensor area of the semiconductor die, and the light emitting assembly. | 2016-06-30 |
20160190381 | PHOTODETECTOR - The present invention provides a photodetector, which comprises a substrate, a gate metal layer, an isolation layer, a transport layer, an insulating layer, an optoelectronic device, and a common metal layer. The gate metal layer is disposed on the substrate; the isolation layer is disposed on the gate metal layer and the substrate; the transport layer is disposed on the isolation layer; the insulating layer is disposed on the transport layer; the optoelectronic device is disposed on the transport layer but not on the gate metal layer; and the common metal layer is disposed on the optoelectronic device. In an etch-back process for removing the common metal layer, the transport layer cannot be removed. Alternatively, in another etch-back process for removing the transport layer, the isolation layer, and the layers and device on the isolation layer, the gate metal layer cannot be removed. | 2016-06-30 |
20160190382 | AMORPHOUS SILICON BASED LASER DOPED SOLAR CELLS - A passivated surface and base and emitter regions in a silicon substrate are formed. Intrinsic amorphous silicon is formed on first surface of a silicon substrate. A first dopant is formed on the intrinsic amorphous silicon. A first laser beam is applied through the first dopant and forms a first doped region in the silicon substrate. A second dopant is formed on the intrinsic amorphous silicon. A second laser beam is applied through the second dopant and forms a second doped region in the silicon substrate. | 2016-06-30 |
20160190383 | CONTINUOUS WEB APPARATUS AND METHOD USING AN AIR TO VACUUM SEAL AND ACCUMULATOR - A deposition apparatus includes an input spool located in non-vacuum input module, at least one vacuum process module, an accumulator, and an air to vacuum sealing mechanism. The accumulator and the sealing mechanism are configured to continuously provide a web substrate from the input spool at atmosphere into the at least one process module at vacuum without stopping the web substrate. | 2016-06-30 |
20160190384 | STRUCTURE OF HIGH ELECTRON MOBILITY LIGHT EMITTING TRANSISTOR - A structure of high electron mobility light emitting transistor comprises a substrate, a HEMT region disposed on the substrate, and a gallium nitride LED (GaN-LED) region disposed on the substrate. A two-dimensional electron gas layer is present in each of the HEMI region and the LED region, and the HEMT region is coupled to the LED region through the two-dimensional electron gas layer. | 2016-06-30 |
20160190385 | Light emitting device and projector - In a light emitting device, a second electrode is provided over a ridge portion having a constant width in a plan view, a second cladding layer includes an electrical connection region electrically connected to the second electrode, the active layer constitutes a light waveguide through which light is guided in a region overlapping the ridge portion in the plan view, the light waveguide is provided with a first light emission surface and a second light emission surface from which the light is emitted, and, in the plan view, a width of the electrical connection region at a central position equidistant from the first light emission surface and the second light emission surface is smaller than a width of an end of the electrical connection region in an extending direction of the light waveguide. | 2016-06-30 |
20160190386 | Light emitting device and projector - In a light emitting device, a light waveguide is provided with a first region including a central position, a second region including a first light emission surface, and a third region including a second light emission surface. A second cladding layer includes a plurality of noncontact regions. The plurality of noncontact regions intersect the light waveguide. A ratio of an area in which the plurality of noncontact regions overlap the first region to an area of the first region is greater than a ratio of an area in which the plurality of noncontact regions overlap the second region to an area of the second region, and is greater than a ratio of an area in which the plurality of noncontact regions overlap the third region to an area of the third region. | 2016-06-30 |
20160190387 | Strain-Control Heterostructure Growth - A solution for fabricating a group III nitride heterostructure and/or a corresponding device is provided. The heterostructure can include a nucleation layer, which can be grown on a lattice mismatched substrate using a set of nucleation layer growth parameters. An aluminum nitride layer can be grown on the nucleation layer using a set of aluminum nitride layer growth parameters. The respective growth parameters can be configured to result in a target type and level of strain in the aluminum nitride layer that is conducive for growth of additional heterostructure layers resulting in strains and strain energies not exceeding threshold values which can cause relaxation and/or dislocation formation. | 2016-06-30 |
20160190388 | SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a semiconductor light emitting device including a first conductivity-type semiconductor base layer and a plurality of light emitting nanostructures disposed to be spaced apart from one another on the first conductivity-type semiconductor base layer, each light emitting nanostructure including a first conductivity-type semiconductor core, an active layer, an electric charge blocking layer, and a second conductivity-type semiconductor layer, respectively, wherein the first conductivity-type semiconductor core has different first and second crystal planes in crystallographic directions. | 2016-06-30 |
20160190389 | DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - A display device and a method of manufacturing the same are disclosed. In one aspect, the display device includes a substrate including a separation area and a plurality of pixel formed over the substrate. The separation area is formed between adjacent pixels, and a plurality of through holes are respectively defined by a plurality of surrounding inner surfaces of the separation area, and wherein each of the inner surfaces passes through the substrate. The display device also includes an encapsulation layer formed over the substrate and covering the inner surfaces of the separation area. | 2016-06-30 |
20160190390 | LIGHT EMITTING DIODE STRUCTURE - A light emitting diode structure includes a substrate and a light emitting unit. The substrate has a protrusion portion and a light guiding portion. The protrusion portion and the light guiding portion have a seamless connection therebetween, and a horizontal projection area of the protrusion portion is smaller than that of the light guiding portion. The light emitting unit is disposed on the protrusion portion of the substrate. The light emitting unit is adapted to emit a light beam, and a portion of the light beam enters the light guiding portion from the protrusion portion and emits from an upper surface of the light guiding portion uncovered by the protrusion portion. | 2016-06-30 |
20160190391 | LIGHT-EMITTING DEVICE - Disclosed are a light-emitting device, a method of fabricating the same, a light-emitting device package, and a lighting system. The light-emitting device includes a first-conductivity-type semiconductor layer, an active layer disposed on the first-conductivity-type semiconductor layer and including a quantum well having a composition of In | 2016-06-30 |
20160190392 | Light Emitting Device and Method for Manufacturing Light Emitting Device - A light emitting device that is inexpensive, is easy to manufacture, and has high light extraction efficiency is provided. The light emitting device includes an oriented polycrystalline substrate, a plurality of columnar light emitting parts, and a light confinement layer. The oriented polycrystalline substrate includes a plurality of oriented crystal grains. The plurality of columnar light emitting parts are discretely located on or above one main surface of the oriented polycrystalline substrate in areas in which there are no crystal defects, and are each a columnar part having a longitudinal direction matching a normal direction of the oriented polycrystalline substrate. The light confinement layer is made of a material having a lower refractive index than a material for the plurality of columnar light emitting parts, and is located on or above the oriented polycrystalline substrate so as to surround the plurality of columnar light emitting parts. | 2016-06-30 |
20160190393 | SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, a semiconductor light emitting element includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type including first and second semiconductor regions, a third semiconductor layer provided between the first and second semiconductor layers, a first electrode layer electrically connected to the first semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer. The second and third semiconductor layers are disposed between the second electrode layer and the first semiconductor layer. The second electrode layer includes a first metal region contacting the first semiconductor region and including silver, a second metal region contacting the second semiconductor region and including silver, and a third metal region contacting the first metal region and including silver. The first metal region is disposed between the third metal region and the first semiconductor region. | 2016-06-30 |
20160190394 | LIGHT EMITTING ELEMENT AND LIGHT EMITTING DEVICE USING THE LIGHT EMITTING ELEMENT, AND METHOD OF MANUFACTURING THE SAME - A light emitting element includes an n-type semiconductor layer having an upper surface; a p-type semiconductor layer over a portion of the upper surface of the n-type semiconductor layer, the p-type semiconductor layer having an upper surface; a protective film continuously covering the n-type semiconductor layer and the p-type semiconductor layer, the protective film defining an n-side opening at the upper surface of the n-type semiconductor layer and a p-side opening at an upper surface of the p-type semiconductor layer; a p-side electrode on the upper surface of the p-type semiconductor layer that is exposed in the p-side opening; an n-side electrode on the upper surface of the n-type semiconductor layer that is exposed at the n-side opening, n-side electrode having an n-side light-transmissive electrode; and an n-side pad electrode on the upper surface of the n-side light-transmissive electrode. | 2016-06-30 |
20160190395 | LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A light emitting device includes a light emitting element, a light-reflecting substrate, and an electrically conductive member. The light emitting element includes a first surface and an electrode provided on the first surface. The light-reflecting substrate has a first main surface facing the first surface of the light emitting element and has a second main surface opposite to the first main surface. The light-reflecting substrate defines a hole at a position corresponding to the electrode. The hole penetrates through the light-reflecting substrate from the first main surface to the second main surface. The electrically conductive member includes a substantially spherical core arranged in the hole and bonded with the electrode, and a coating portion provided in a space between the substantially spherical core and a lateral surface of the hole. | 2016-06-30 |
20160190396 | LIGHT EMITTING DEVICE, LIGHT EMITTING DEVICE ARRAY AND LIGHTING APPARATUS INCLUDING THE SAME - A light emitting device is provided that may include a light emitting structure including a first conductivity-type semiconductor layer, an active layer provided on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer provided on the active layer, a first electrode that conductively contacts the first conductivity-type semiconductor layer, an insulating layer provided on a portion of the light emitting structure and the first electrode, and a second electrode that conductively contacts the second conductivity-type semiconductor layer, the first electrode including a first portion protruding from a side surface of the first conductivity-type semiconductor layer. | 2016-06-30 |
20160190397 | LED PACKAGE STRUCTURE AND THE MANUFACTURING METHOD OF THE SAME - The present invention is related to a LED package structure, which includes a substrate having a carrier surface, a light-emitting chip disposed on the carrier surface, electrically connecting to the substrate; and a transparent protective shield disposed on the carrier surface; a hermetic receiving space is formed between the transparent protective shield and the substrate. The light-emitting chip is disposed in the hermetic receiving space. A gap is formed between the light-emitting chip and the transparent protective shield. | 2016-06-30 |
20160190398 | Substrate for Can Package-Type Optical Device and Optical Device using Same - The present invention relates to a method for manufacturing an optical device, and to an optical device manufactured thereby, which involve using a substrate itself as a heat-dissipating plate, and adopting a substrate with vertical insulation layers formed thereon, such that electrode terminals do not have to be extruded out from a sealed space, and thus enabling the overall structure and manufacturing process for an optical device to be simplified. | 2016-06-30 |
20160190399 | PACKAGE, LIGHT EMITTING DEVICE, AND METHODS OF MANUFACTURING THE PACKAGE AND THE LIGHT EMITTING DEVICE - A package for mounting a light emitting element includes: a first lead electrode having, in a plan view, a first region, a second region surrounding a periphery of the first region having a width of 110 μm or more and a thickness greater than that of the first region, and a third region partially surrounding a periphery of the second region and having a thickness smaller than that of the second region; a second lead electrode spaced apart from the first lead electrode; and a resin molded body fixing a portion of each of the first and second lead electrodes. A portion of each of the first and second lead electrodes and a portion of the resin molded body exposed therebetween form a bottom surface of a recess. | 2016-06-30 |
20160190400 | LIGHT-EMITTING DEVICE PACKAGE, MANUFACTURING METHOD THEREOF, AND VEHICLE LAMP AND BACKLIGHT UNIT INCLUDING SAME - Disclosed are a light-emitting device package, a manufacturing method therefor, and a vehicle lamp and a backlight unit including the same. The light-emitting device package includes: a light-emitting chip having electrode pads positioned at a lower part thereof; a wavelength conversion unit for covering at least an upper surface and lateral surfaces of the light-emitting chip; and a reflective part which covers the lateral surfaces of the light-emitting chip. Accordingly, the light-emitting device package can be miniaturized and a separate substrate for forming a lens is not required. | 2016-06-30 |
20160190401 | SHAPED PHOSPHOR TO REDUCE REPEATED REFLECTIONS - Pre-formed wavelength conversion elements are attached to light emitting elements and are shaped to reduce repeated occurrences of total internal reflection. The sides of the shaped elements may be sloped or otherwise shaped so as to introduce a change in the angle of incidence of reflected light upon the light extraction surface of the wavelength conversion element. The pre-formed wavelength conversion elements may be configured to extend over an array of light emitting elements, with features between the light emitting elements that are shaped to reduce repeated occurrences of total internal reflection. | 2016-06-30 |
20160190402 | LIGHT EMITTING DEVICE - A light emitting device includes a light emitting element having electrodes, a support, at least one pair of conductive wires that are formed on a surface of the support with a space from each other, and on which the electrodes of the light emitting element are disposed, distance between the pair of conductive wires under an outer edge of the light emitting element being shorter than the distance between the pair of conductive wires at other portions under the light emitting element, and a phosphor layer that continuously covers the outer edge of the light emitting element and a surface of the conductive wires around a region where the light emitting element is disposed. | 2016-06-30 |
20160190403 | ENHANCED EMISSION FROM PLASMONIC COUPLED EMITTERS FOR SOLID STATE LIGHTING - There is provided an illumination device ( | 2016-06-30 |
20160190404 | Manufacturing method of light-emitting device - A method of manufacturing a light-emitting device includes forming a separation layer on an upper surface of a supporting substrate; forming a plurality of external electrode layers on the separation layer; mounting a plurality of light-emitting elements on the external electrode layers; forming a plurality of resin layers between the supporting substrate and each of the light-emitting elements after mounting the light-emitting elements, the resin layers being formed such that the resin layers are separated from one another, and each resin layer underlies at least one light-emitting element; and applying laser light to the separation layer from a lower surface side of the supporting substrate, and separating the supporting substrate and the light-emitting elements from each other. | 2016-06-30 |
20160190405 | LIGHT EMITTING DEVICE - A light emitting device includes a base, at least one light emitting element, and a light transmissive sealing member. The base has a conductor wiring. The at least one light emitting element is mounted on the base. The at least one light emitting element is electrically connected to the conductor wiring. The light transmissive sealing member includes a light diffusion material. The light transmissive sealing member covers the at least one light emitting element. The light transmissive sealing member has a projection shape. The projection shape has a substantially circular bottom surface facing the base and a height in a light axis direction of the at least one light emitting element. The height is greater than a diameter of the substantially circular bottom surface. | 2016-06-30 |
20160190406 | Light-emitting device and manufacturing method thereof - This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting stack with a first (top) surface, a bottom surface and at least one side surface connected to the first surface and the bottom surface, a light-reflective enclosure with a second (top) surface, a contact electrode formed on the bottom surface of the light-emitting layer, and a wavelength converting layer. Moreover, the light-reflective enclosure surrounds the side surface of the light-emitting stack and exposes to the first surface. The wavelength converting layer covers the first surface and the second surface. In addition, the second surface has a plurality of fine concave structures distributed on the second surface. | 2016-06-30 |
20160190407 | LED METAL SUBSTRATE PACKAGE AND METHOD OF MANUFACTURING SAME - The present invention relates to an LED metal substrate package, and particularly, to an LED metal substrate package having a heat dissipating structure, and a method of manufacturing same. The method comprises at least the steps of: forming at least one cavity having a groove of a predetermined depth in a metal substrate that is electrically separated by at least one vertical insulation layer, the cavity having one vertical insulation layer built in a floor thereof; treating all surfaces, except portions of the top surface of the metal substrate formed in the respective cavities, with shadow masking; removing an oxide film formed on the surface portions that have not been treated with masking; depositing an electrode layer on each of the surface portions of the oxide layer that have been removed; removing the shadow mask; performing Au/Sn soldering on the electrode layer and bonding an optical device chip; and wire bonding one electrode of the optical device, disposed on one side of the metal substrate with respect to each of the vertical insulation layers, through wires to the metal substrate disposed on the other side of each of the vertical insulation layers. The present invention forms solder using Au/Sn material, which has good heat dissipating characteristics and good bonding characteristics, on the electrode layer to bond an optical device chip, so as to have excellent heat dissipating performance compared to existing LED metal packages that use Ag epoxy. | 2016-06-30 |
20160190408 | Light emitting device - A light emitting device includes: a substrate having a base body and a plurality of wiring parts provided on at least one side of the base body; a first covering part that covers part of the wiring parts; a plurality of light emitting elements that are disposed on the wiring parts exposed from the first covering part; a second covering part that is disposed on the first covering part surrounding the light emitting elements and is formed from a material whose reflectivity is higher than that of the first covering part, and a resin component that seals the substrate and the light emitting elements, and is disposed in contact with the first covering part and the second covering part. | 2016-06-30 |
20160190409 | Light-emitting device - This disclosure discloses a light-emitting device. The light-emitting device includes a light-emitting diode, a metal bump, and a reflective insulation layer. The light-emitting diode includes an active layer, an insulation layer formed on the active layer and having a side surface, and a pad electrically connected to the active layer. The metal bump is formed on the pad. The reflective insulation layer covers the side surface. | 2016-06-30 |
20160190410 | OPTOELECTRONIC COMPONENT AND METHOD FOR THE PRODUCTION THEREOF - An optoelectronic component includes a housing having an electrically conductive first contact section, and an optoelectronic semiconductor chip arranged on the first contact section, wherein the optoelectronic semiconductor chip and the first contact section are at least partly covered by a first layer including a silicone, a second layer including SiO | 2016-06-30 |
20160190411 | CHIP-ON-BOARD TYPE LIGHT EMITTING DEVICE PACKAGE AND METHOD FOR MANUFACTURING SAME - There are provided a chip-on-board type light emitting device package capable of improving structural reliability and heat-dissipating efficiency and reducing a manufacturing cost, and a method for manufacturing the same. The chip-on-board type light emitting device package includes: a dual frame including a base frame on which a plurality of light emitting devices are mounted and an electrode frame positioned above the base frame so as to be spaced apart from the base frame and including two electrodes separated from each other; and a molding part coupled to the dual frame so that the base frame and the electrode frame are spaced apart from each other and having an opening through which light generated in the plurality of light emitting devices is to be emitted, wherein the base frame has a through-hole through which the electrode frame is exposed. | 2016-06-30 |
20160190412 | PACKAGE, LIGHT-EMITTING DEVICE, AND METHOD FOR MANUFACTURING THE SAME - A package includes a plurality of electrode pairs, each electrode pair including a first electrode on one side and a second electrode on another side in a plan view. The first electrode is electrically connected to the second electrode included in an electrode pair adjacent to a first or second lateral side of the one electrode pair, and is not electrically connected to the first electrode included in the electrode pair adjacent to the first or second side of the one electrode pair. The second electrode is electrically connected to the first electrode included in an electrode pair adjacent to a lower side of the one electrode pair, and is not electrically connected to the second electrode included in the electrode pair adjacent to the first or second lateral side of the one electrode pair. | 2016-06-30 |
20160190413 | PACKAGE, LIGHT EMITTING DEVICE, AND METHODS OF MANUFACTURING THE PACKAGE AND THE LIGHT EMITTING DEVICE - A package for mounting a light emitting element includes a recess; a pair of lead electrodes exposed at a bottom surface of the recess; a plating layer covering a surface of each of the pair of lead electrodes; and a resin molded body retaining the pair of lead electrodes, and forming an area between the pair of lead electrodes at the bottom surface of the recess and a lateral surface of the recess. At least one of the lead electrodes has a front surface protrusion that is linearly formed along the resin molded body at the bottom surface of the recess and along a periphery of the bottom surface of the recess, and a back surface protrusion that is formed at a position at a back surface opposite to a position of the front surface protrusion, and at least a tip of each of the front surface protrusion and the back surface protrusion is exposed outside the plating layer. | 2016-06-30 |
20160190414 | LIGHT EMITTING DEVICE AND METHOD FOR PRODUCING THE SAME - A light emitting device includes a light emitting element and a package. The package includes a first lead frame, a second lead frame, and a resin. The first lead frame has a first surface on which the light emitting element is provided. The first lead frame has a first overlap portion. The second lead frame is spaced apart from the first lead frame and has a second overlap portion. The first overlap portion and the second overlap portion overlap at an overlap position so that the first lead frame extends from the overlap position toward a first direction and a second direction opposite to the first direction and so that the second lead frame extend from the overlap position toward a third direction and a fourth direction opposite to the third direction as viewed along a line substantially perpendicular to the first surface. | 2016-06-30 |
20160190415 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package may include a package body; first and second lead frames; and a support part disposed below the first and second lead frames and having a region overlapping with at least a portion of a space formed between the first and second lead frames, the support part containing a material different from that of the package body. | 2016-06-30 |
20160190416 | LIGHT-EMITTING DEVICE - A light-emitting device is provided. The light-emitting device comprises: a supporting member having a top surface; a first conductive via and a second conductive via separated from the first conductive, wherein the first conductive via and the second conductive via each has only one through-hole in the supporting member; and a semiconductor structure on the top surface of the supporting member, wherein the semiconductor structure comprises a first conductive type semiconductor layer, a second conductive type semiconductor layer and an active layer between the first conductive type semiconductor layer and the second conductive type semiconductor layer, wherein the semiconductor structure overlays the second conductive via; and a conductive layer on a sidewall of the semiconductor structure and electrically connecting the first conductive via to one of the semiconductor layers. | 2016-06-30 |
20160190417 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME - A semiconductor device includes an insulating substrate,a semiconductor element disposed on an upper surface of the substrate, a heat dissipation member, and a metal bonding layer that bonds the lower surface of the substrate to the upper surface of the heat dissipation member, and the area of the upper surface of the heat dissipation member is larger than the area of the lower surface of the substrate, and the metal bonding layer contacts the whole of the lower surface of the substrate and has an area larger than the area of the lower surface of the substrate, and the heat conductivity of the metal bonding layer is higher than the heat conductivity of the heat dissipation member. | 2016-06-30 |
20160190418 | LIGHT EMITTING DEVICE - According to one embodiment of the present invention, the light emitting device includes an LED element, a side wall which surrounds the LED element, a phosphor layer which is fixed to the side wall with an adhesive layer therebetween, and is positioned above the LED element, and a metal pad as a heat dissipating member. The side wall includes an insulating base which surrounds the LED element and a metal layer which is formed on a side surface at the LED element side of the base, and is in contact with the metal pad and the adhesive layer. The adhesive layer includes a resin layer that includes a resin containing particles which have higher thermal conductivity than the resin or a layer that includes solder. | 2016-06-30 |
20160190419 | Thermoelectric Module, In Particular Intended To Generate An Electric Current In A Motor Vehicle - A thermoelectric module ( | 2016-06-30 |
20160190420 | ELECTRICAL AND THERMAL CONTACTS FOR BULK TETRAHEDRITE MATERIAL, AND METHODS OF MAKING THE SAME - Under one aspect, a structure includes a tetrahedrite substrate; a first contact metal layer disposed over and in direct contact with the tetrahedrite substrate; and a second contact metal layer disposed over the first contact metal layer. A thermoelectric device can include such a structure. Under another aspect, a method includes providing a tetrahedrite substrate; disposing a first contact metal layer over and in direct contact with the tetrahedrite substrate; and disposing a second contact metal layer over the first contact metal layer. A method of making a thermoelectric device can include such a method. | 2016-06-30 |
20160190421 | METHOD FOR PRODUCING A THERMOELECTRIC OBJECT FOR A THERMOELECTRIC CONVERSION DEVICE - A method for producing a thermoelectric object for a thermoelectric conversion device is provided. A starting material which has elements in the ratio of a half-Heusler alloy is melted and then cooled to form at least one ingot. The ingot is homogenized at a temperature of 1000° C. to 1400° C. for a period of time t, wherein 0.5 h≦t<12 h or 24 h2016-06-30 | |
20160190422 | THERMOELECTRIC CONVERSION MATERIAL, MANUFACTURING METHOD OF THE SAME, AND THERMOELECTRIC CONVERSION DEVICE USING THE SAME - A BiTe-based or CoSb | 2016-06-30 |
20160190423 | ELASTIC WAVE DEVICE AND MANUFACTURING METHOD FOR SAME - In an elastic wave device, IDT electrodes on a piezoelectric substrate are electrically connected to wiring electrodes. A support member covers at least portions of the wiring electrodes. Through-holes in the support member expose upper surfaces of the wiring electrodes and have conductive layers filled therein. The wiring electrodes each have a multilayer structure in which a refractory metal film having a melting point of 900° C. or higher, a diffusion preventive film, and an Al or Al-alloy film are laminated successively from the upper surface side. | 2016-06-30 |
20160190424 | Multilayer Component Comprising an External Contact and Method for Producing a Multilayer Component Comprising an External Contact - A multilayer component includes a main body and an external contact. The external contact has a connection element and a contact layer. The contact layer electrically conductively connects the main body to the connection element. A connection between the main body and the connection element is produced by sintering of the contact layer. | 2016-06-30 |
20160190425 | Method for Manufacturing Piezoelectric Actuator - A method for manufacturing a piezoelectric actuator is disclosed that includes forming a vibration plate, forming a plurality of electrodes on the vibration plate, forming a piezoelectric layer on the electrodes, and forming a common electrode on the piezoelectric layer. | 2016-06-30 |
20160190426 | PIEZOELECTRIC VIBRATOR AND METHOD OF MANUFACTURING PIEZOELECTRIC VIBRATOR - A piezoelectric vibrator has a piezoelectric vibrating reed mounted on an upper layer base substrate through a conductive adhesive, in which the piezoelectric vibrating reed includes a first vibrating arm and a second vibrating arm extending along a first direction and arranged side by side in a second direction, a base supporting the first vibrating arm and the second vibrating arm and a first support arm and a second support arm positioned in the outer side of the first vibrating arm and the second vibrating arm in the second direction and bonded to the upper layer base substrate, in which an extrusion amount of the conductive adhesive in the inner side of the first support arm and the second support arm is smaller than an extrusion amount of the conductive adhesive in the outer side of the first support arm and the second support arm. | 2016-06-30 |
20160190427 | NANOFIBER WEB PIEZOELECTRIC MATERIAL OBTAINED BY ELECTROSPINNINGPOLYLACTIC ACID, METHOD OF PRODUCING SAME, PIEZOELECTRIC SENSOR COMPRISING SAME, AND METHOD OF MANUFACTURING THE PIEZOELECTRIC SENSOR - Disclosed are a nanofiber web piezoelectric material and a method of producing the same, wherein a spinning solution of polylactic acid (PLA) in a solvent is electrospun, yielding a nanofiber web, thereby exhibiting piezoelectric properties without additional drawing. This piezoelectric material is remarkably cost-effective, can exhibit superior piezoelectric properties, can be used to manufacture inexpensive piezoelectric products, and obviates any additional drawing because the PLA chain is drawn during electrospinning. The drawing force induced by a high electric field between the needle and the collector enables the formation of 3 | 2016-06-30 |
20160190428 | MULTILAYER ACTUATOR AND DISPLAY DEVICE COMPRISING THE SAME - Provided is a multilayer actuator and a display device comprising the same with improved driving displacement that includes, for example, a plurality of electroactive layers, wherein the electroactive layers comprise a ferroelectric polymer, and polarization directions of all electroactive layers are substantially the same. | 2016-06-30 |
20160190429 | PIEZOELECTRIC FILM AND PIEZOELECTRIC CERAMICS - An object is to cause a piezoelectric film to perform a piezoelectric operation at a higher voltage than the conventional piezoelectric film. An aspect of the present invention is a piezoelectric film, wherein a voltage at which a piezoelectric butterfly curve that is a result obtained by measuring a piezoelectric property of a piezoelectric film takes a minimum value is larger by 2 V or more than a coercive voltage of a hysteresis curve that is a result obtained by measuring a hysteresis property of said piezoelectric film. The piezoelectric film includes an anti-ferroelectric film, and a ferroelectric film formed on the anti-ferroelectric film. | 2016-06-30 |
20160190430 | PIEZOCERAMIC MATERIAL WITH REDUCED LEAD CONTENT - The invention relates to a piezoceramic material with reduced lead content, based on potassium sodium niobate (PSN) and having a defined parent composition. According to the invention the manner of addition of a mixture of Pb, Nb and optionally Ag and optionally Mn gives a wide sintering range together with reproducible electrical and mechanical properties of the material. | 2016-06-30 |
20160190431 | POLYMER FOAM-BASED PIEZOELECTRIC MATERIALS AND METHOD OF MANUFACTURE - Thermally stable piezoelectric polymer foams (ferroelectrets) with high piezoelectric activity for sensing and actuation. The invention further includes a method of fabricating such foams in an environmentally friendly manner. | 2016-06-30 |
20160190432 | DUAL ENCAPSULATION INTEGRATION SCHEME FOR FABRICATING INTEGRATED CIRCUITS WITH MAGNETIC RANDOM ACCESS MEMORY STRUCTURES - Integrated circuits with magnetic random access memory (MRAM) and dual encapsulation for double magnesium oxide tunnel barrier structures and methods for fabricating the same are disclosed herein. As an illustration, an integrated circuit includes a magnetic random access memory structure that includes a bottom electrode that has a bottom electrode width and has bottom electrode sidewalls and a fixed layer overlying the bottom electrode that has a fixed layer width that is substantially equal to the bottom electrode width and has fixed layer sidewalls. The MRAM structure of the integrated circuit further includes a free layer overlying a central area of the fixed layer. Still further, the MRAM structure of the integrated circuit includes a first encapsulation layer disposed along the free layer sidewalls and a second encapsulation layer disposed along the bottom electrode sidewalls and the fixed layer sidewalls. | 2016-06-30 |
20160190433 | VERTICAL HALL EFFECT SENSOR - In one aspect, a vertical Hall effect sensor includes a semiconductor wafer having a first conductivity type and a plurality of semiconductive electrodes disposed on the semiconductor wafer. The plurality of semiconductive electrodes have the first conductivity type and include a source electrode, a first sensing electrode and a second sensing electrode, arranged such that the source electrode is between the first sensing electrode and the sensing electrode and a first drain electrode and a second drain electrode, arranged such that the first sensing electrode, second sensing electrode, and source electrode are between the first drain electrode and the second drain electrode. The vertical Hall effect sensor also includes a plurality of semiconductor fingers disposed on the semiconductor wafer and interdigitated with the plurality of semiconductive electrodes, the semiconductor fingers having a second conductivity type. | 2016-06-30 |
20160190434 | DOUBLE SYNTHETIC ANTIFERROMAGNET USING RARE EARTH METALS AND TRANSITION METALS - A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic layer. Second fixed layers are disposed below the free magnetic layer. The first fixed layers and the second fixed layers both comprise a rare earth element. | 2016-06-30 |
20160190435 | IN-SITU ANNEALING TO IMPROVE THE TUNNELING MAGNETO-RESISTANCE OF MAGNETIC TUNNEL JUNCTIONS - Embodiments are directed to a magnetic tunnel junction (MTJ) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (PMA) reference layer and an interfacial reference layer. The MTJ further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer. The tunnel barrier is configured to enable electrons to tunnel through the tunnel barrier between the interfacial reference layer and the free layer. A first in-situ alignment is provided between a tunnel barrier lattice structure of the tunnel barrier and an interfacial reference layer lattice structure of the interfacial reference layer. A second in-situ alignment is provided between the tunnel barrier lattice structure of the tunnel barrier and a free layer lattice structure of the free layer. The PMA reference layer lattice structure is not aligned with the interfacial reference layer lattice structure. | 2016-06-30 |
20160190436 | DOUBLE SYNTHETIC ANTIFERROMAGNET USING RARE EARTH METALS AND TRANSITION METALS - A mechanism relates to magnetic random access memory (MRAM). A free magnetic layer is provided and first fixed layers are disposed above the free magnetic layer. Second fixed layers are disposed below the free magnetic layer. The first fixed layers and the second fixed layers both comprise a rare earth element. | 2016-06-30 |
20160190437 | IN-SITU ANNEALING TO IMPROVE THE TUNNELING MAGNETO-RESISTANCE OF MAGNETIC TUNNEL JUNCTIONS - Embodiments are directed to a magnetic tunnel junction (MTJ) memory cell that includes a reference layer formed from a perpendicular magnetic anisotropy (PMA) reference layer and an interfacial reference layer. The MTJ further includes a free layer and a tunnel barrier positioned between the interfacial reference layer and the free layer. The tunnel barrier is configured to enable electrons to tunnel through the tunnel barrier between the interfacial reference layer and the free layer. A first in-situ alignment is provided between a tunnel barrier lattice structure of the tunnel barrier and an interfacial reference layer lattice structure of the interfacial reference layer. A second in-situ alignment is provided between the tunnel barrier lattice structure of the tunnel barrier and a free layer lattice structure of the free layer. The PMA reference layer lattice structure is not aligned with the interfacial reference layer lattice structure. | 2016-06-30 |
20160190438 | PHASE CHANGE MEMORY CELL WITH CONSTRICTION STRUCTURE - Some embodiments include methods of forming memory cells. Such methods can include forming a first electrode, a second electrode, and a memory element directly contacting the first and second electrodes. Forming the memory element can include forming a programmable portion of the memory element isolated from the first electrode by a first portion of the memory element and isolated from the second electrode by a second portion of the memory element. Other embodiments are described. | 2016-06-30 |
20160190439 | SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE HAVING ENCAPSULATION FILM AND METHOD OF FABRICATING THE SAME - A semiconductor integrated circuit device and a method of fabricating the same are disclosed. The semiconductor integrated circuit device includes a resistive layer and an encapsulation film formed to surround an outer wall of the resistive layer The encapsulation film contains an oxygen absorbing ingredient. | 2016-06-30 |
20160190440 | RESISTIVE RANDOM ACCESS MEMORY AND MANUFACTURING METHOD THEREOF - A resistive random access memory including a substrate, a dielectric layer, and at least one memory cell string is provided. The dielectric layer is disposed on the substrate. The memory cell string includes memory cells and at least one first interconnect structure. The memory cells are vertically and adjacently disposed in the dielectric layer, and each memory cells includes a first conductive line, a second conductive line, and a variable resistance structure. The second conductive line is disposed at one side of the first conductive line, and the top surface of the second conductive line is higher than the top surface of the first conductive line. The variable resistance structure is disposed between the first conductive line and the second conductive line. The variable resistance structures in the vertically adjacent memory cells are isolated from each other. The first interconnect structure is connected to the vertically adjacent first conductive lines. | 2016-06-30 |
20160190441 | Resistive Memory Cell With Sloped Bottom Electrode - A method of forming a resistive memory cell, e.g., a CBRAM or ReRAM cell, may include: forming a plurality of bottom electrode connections, depositing a bottom electrode layer over the bottom electrode connections, performing a first etch to remove portions of the bottom electrode layer such that the remaining bottom electrode layer defines at least one sloped surface, forming an oxidation layer on each sloped surface of the remaining bottom electrode layer, performing a second etch on the remaining bottom electrode layer and oxidation layer on each sloped surface to define at least one upwardly-pointing bottom electrode region above each bottom electrode connection, each upwardly-pointing bottom electrode region defining a bottom electrode tip, and forming an electrolyte region and a top electrode over each bottom electrode tip such that the electrolyte region is arranged between the top electrode and the respective bottom electrode top. | 2016-06-30 |
20160190442 | Resistive Memory Cell Having A Reduced Conductive Path Area - A method of forming a resistive memory cell, e.g., a CBRAM or ReRAM, may include forming a bottom electrode layer, oxidizing an exposed region of the bottom electrode layer to form an oxide region, removing a region of the bottom electrode layer proximate the oxide region, thereby forming a bottom electrode having a pointed tip region adjacent the oxide region, and forming an electrolyte region and top electrode over at least a portion of the bottom electrode and oxide region, such that the electrolyte region is arranged between the pointed tip region of the bottom electrode and the top electrode, and provides a path for conductive filament or vacancy chain formation from the pointed tip region of the bottom electrode to the top electrode when a voltage bias is applied to the memory cell. A memory cell and memory cell array formed by such method are also disclosed. | 2016-06-30 |
20160190443 | Memory Arrays and Methods of Forming Memory Arrays - Some embodiments include memory arrays having a plurality of memory cells vertically between bitlines and wordlines. The memory cells contain phase change material. Heat shields are laterally between immediately adjacent memory cells along a bitline direction. The heat shields contain electrically conductive material and are electrically connected with the bitlines. Some embodiments include memory arrays having a plurality of memory cells arranged in a first grid. The first grid has columns along a first direction and has rows along a second direction substantially orthogonal to the first direction. First heat shields are between adjacent memory cells along the first direction and are arranged in a second grid offset from the first grid along the first direction. Second heat shields are between adjacent memory cells along the second direction, and are arranged lines in lines extending along the first direction. Some embodiments include methods for forming memory arrays. | 2016-06-30 |
20160190444 | RESISTIVE RANDOM ACCESS MEMORY AND METHOD FOR MANUFACTURING THE SAME - A resistive random access memory (RRAM) including a substrate, a dielectric layer, memory cells and an interconnect structure is provided. The dielectric layer is disposed on the substrate. The memory cells are vertically and adjacently disposed in the dielectric layer, and each of the memory cells includes a first electrode, a second electrode and a variable resistance structure. The second electrode is disposed on the first electrode. The variable resistance structure is disposed between the first electrode and the second electrode. In two vertically adjacent memory cells, the first electrode of the upper memory cell and the second electrode of the lower memory cell are disposed between the adjacent variable resistance structures and isolated from each other. The interconnect structure is disposed in the dielectric layer and connects the first electrodes of the memory cells. | 2016-06-30 |
20160190445 | ALL-PRINTED PAPER MEMORY - All-printed paper-based substrate memory devices are described. In an embodiment, a paper-based memory device is prepared by coating one or more areas of a paper substrate with a conductor material such as a carbon paste, to form a first electrode of a memory, depositing a layer of insulator material, such as titanium dioxide, over one or more areas of the conductor material, and depositing a layer of metal over one or more areas of the insulator material to form a second electrode of the memory. In an embodiment, the device can further include diodes printed between the insulator material and the second electrode, and the first electrode and the second electrodes can be formed as a crossbar structure to provide a WORM memory. The various layers and the diodes can be printed onto the paper substrate by, for example, an ink jet printer. | 2016-06-30 |
20160190446 | METHOD OF FORMING A GRAPHENE STRUCTURE - In various embodiments, a method of forming a graphene structure is provided. The method may include forming a body including at least one protrusion, and forming a graphene layer at an outer peripheral surface of the at least one protrusion. | 2016-06-30 |
20160190447 | MATERIALS FOR ORGANIC ELECTROLUMINESCENT DEVICES - The present invention relates to compounds of the formula (1) which are suitable for use in electronic devices, in particular organic electroluminescent devices, and to electronic devices which comprise these compounds. | 2016-06-30 |
20160190448 | CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE INCLUDING THE SAME - A condensed-cyclic compound is represented by Formula 1: | 2016-06-30 |
20160190449 | CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT-EMITTING DEVICE COMPRISING THE SAME - A condensed-cyclic compound is represented by Formula 1: | 2016-06-30 |
20160190450 | CONDENSED-CYCLIC COMPOUND AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - A condensed-cyclic compound and an organic light-emitting device, the condensed-cyclic compound being represented by the following Formula 1: | 2016-06-30 |
20160190451 | MATERIAL FOR ORGANIC ELECTROLUMINESCENT ELEMENT AND ORGANIC ELECTROLUMINESCENT ELEMENT USING THE SAME - Provided are a material for an organic EL device that improves the luminous efficacy of a device, sufficiently secures its driving stability, and has a simple construction, and an organic EL device using the material. The material for an organic EL device is formed of a carborane compound having a structure in which a dibenzofuranyl group is bonded to a carborane ring. In addition, the material for an organic EL device is preferably used in a light-emitting layer, an electron-transporting layer, or a hole-blocking layer of an organic electroluminescent device having the light-emitting layer between an anode and a cathode laminated on a substrate. Also disclosed is an organic electroluminescent device using the material for an organic EL device as a host material for a light-emitting layer containing a phosphorescent light-emitting dopant and the host material. | 2016-06-30 |
20160190452 | SEMICONDUCTOR FILM, OXIDE MICROPARTICLE DISPERSION, METHOD FOR MANUFACTURING SEMICONDUCTOR FILM, AND THIN FILM TRANSISTOR - There is provided a semiconductor film, including: an aggregate of oxide microparticles including at least one type of metal selected from the group consisting of In, Zn, and Sn; and at least one type of a ligand which is selected from the group consisting of a ligand expressed by General Formula (A) below, a ligand expressed by General Formula (B) below, and a ligand expressed by General Formula (C) below and which is coordinated with the oxide microparticles: | 2016-06-30 |
20160190453 | ELEMENT MANUFACTURING METHOD AND ELEMENT MANUFACTURING APPARATUS - An intermediate product includes a substrate and a plurality of protrusions disposed on the substrate. A lid member with a first surface is set in place for the first surface to be oriented toward the protrusions of the intermediate product. In a lid member pressing step, on the first surface of the lid member, a shape curved to protrude toward the intermediate product is formed and a section of the lid member that is formed with the curved shape is brought into close contact with a part of the intermediate product. | 2016-06-30 |
20160190454 | ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the method includes performing a first mask process of forming an active layer of a thin-film transistor (TFT) over a substrate and performing a second mask process of i) forming a gate insulating layer over the active layer and ii) forming a gate electrode of the TFT over the gate insulating layer. The method also includes performing a third mask process of i) forming an interlayer insulating layer over the gate electrode and ii) forming a contact hole in the interlayer insulating layer so as to expose a portion of the active layer and performing a fourth mask process of forming a pixel electrode over the interlayer insulating layer. | 2016-06-30 |
20160190455 | METHOD FOR MANUFACTURING ORGANIC LIGHT-EMITTING DEVICE - The present application relates to a method of preparing an organic light emitting device. The method of preparing the organic light emitting device according to the present application includes: 1) forming a first electrode on a substrate; 2) forming an auxiliary electrode on at least a partial region on the first electrode; 3) forming an insulating layer on the auxiliary electrode, and forming an overhang structure, in which the insulating layer has a greater width than that of the auxiliary electrode; and 4) forming a second electrode on the first electrode and the insulating layer, so that the second electrode provided on the first electrode and the second electrode provided on the insulating layer are electrically short-circuited to each other. | 2016-06-30 |
20160190456 | ORGANIC LIGHT-EMITTING DIODE DISPLAY AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting diode (OLED) display and a method of manufacturing the same are disclosed. In one aspect, the method includes performing a first mask process of forming an active layer of a thin-film transistor (TFT) and a first electrode of a capacitor over a substrate and performing a second mask process of i) forming a gate insulating layer and ii) forming a gate electrode of the TFT and a second electrode of the capacitor over the gate insulating layer. The method also includes performing a third mask process of i) forming first and second interlayer insulating layers and ii) removing portions of the first and second interlayer insulating layers so as to form a contact hole that exposes a portion of the active layer. The method also includes performing a fourth mask process of forming a pixel electrode over the second interlayer insulating layer. | 2016-06-30 |
20160190457 | CONDUCTIVE POLYMER COMPOSITION, AND CONDUCTIVE POLYMER THIN FILM, ELECTRONIC DEVICE AND ORGANIC LIGHT-EMITTING DEVICE USING THE SAME - A conductive polymer composition, including a polymer nanoparticle solution; and a conductive polymer solution, the polymer nanoparticle solution containing polymer nanoparticles in a concentration range of about 0.5 wt/vol % to about 2 wt/vol %, the conductive polymer solution containing a conductive polymer in a concentration range of about 1 wt/vol % to about 3 wt/vol %, and the polymer nanoparticle solution being included in the composition in an amount range of about 10% by volume to about 80% by volume, with respect to a total volume of the conductive polymer composition. | 2016-06-30 |