26th week of 2011 patent applcation highlights part 15 |
Patent application number | Title | Published |
20110155952 | Filtration Media Having a Chemical Reagent - An odor filtration media having a chemical reagent which removes odor causing fluid contaminants from a fluid stream through the use of granular or shaped media have a chemical composition including permanganate is provided. A method of producing the odor absorbing media having a chemical reagent is also provided and comprises the steps of mixing H | 2011-06-30 |
20110155953 | LIQUID CRYSTAL COMPOSITION AND LIQUID CRYSTAL DISPLAY DEVICE - Disclosed is a liquid crystal composition that can satisfy at least one of properties such as a high upper limit temperature of a nematic phase, a low lower limit temperature of a nematic phase, a low viscosity, a proper optical anisotropy, a negatively high dielectric anisotropy, a high specific resistance, a high stability against ultraviolet light, and a high stability against heat, or has a proper balance between at least two of the above properties. The liquid crystal composition comprises a first component of a dicyclic compound which has a negatively high dielectric anisotropy and contains fluorines at least three of lateral positions, a second component of a specific compound having a low viscosity, and a third component of a specific compound having a negatively high dielectric anisotropy and contains a negatively dielectric anisotropy. The liquid crystal display element comprises the composition. | 2011-06-30 |
20110155954 | Materials for Organic Electroluminescence Devices - The invention relates to mononuclear, neutral copper (1) complexes having a bidentate ligand that binds via nitrogen, and two phosphane or arsane ligands, to the use thereof for producing electronic components, and to electronic devices comprising said complexes. | 2011-06-30 |
20110155955 | ELECTRON-TRANSPORTING MATERIALS - Compounds of formula I may be used in optoelectronic devices | 2011-06-30 |
20110155956 | Fibers Including Nanoparticles And A Method Of Producing The Nanoparticles - A method produces nanoparticles by electrospinning a silicon composition having at least one silicon atom. The electrospinning of the silicon composition forms fibers. The fibers are pyrolyzed to produce the nanoparticles. The nanoparticles have excellent photo-luminescent properties and are suitable for use in many different applications. | 2011-06-30 |
20110155957 | SYSTEM FOR SYNTHESIS GAS PRODUCTION - With a system for synthesis gas production, having a reactor as well as a gas cooler/purifier connected with it in terms of flow, a solution is supposed to be created, with which the most compact possible connection between reactor, on the one hand, and the gas cooler or purifier, on the other hand, is made possible, whereby heat expansions that occur due to different temperatures are absorbed. This is accomplished in that the connection between reactor ( | 2011-06-30 |
20110155958 | METHODS AND APPARATUS FOR DRYING AND GASIFICATION OF BIOMASS - In some variations, this invention provides a method of drying and gasifying a carbon-containing feedstock, comprising combusting methane to generate heat and a flue gas; drying the carbon-containing feedstock using part of the flue gas; and gasifying the dried feedstock to generate syngas. Some embodiments provide an apparatus for drying comprising a vessel; a primary channel for flowing the solid feedstock and a gas for drying the solid feedstock; a secondary channel for flowing the gas; and a plurality of internal screens or sieve plates suitable for passage of the gas. Other variations provide an apparatus including a primary vessel having a channel for axially flowing the solid feedstock; a pipe contained within the primary vessel, with a plurality of openings for radially distributing a gas for drying the solid feedstock; and a plurality of exit ports at the walls for removal of the gas from the primary vessel. | 2011-06-30 |
20110155959 | Methods and Compositions for Inhibiting Corrosion - Of the many methods provided herein, a method comprising: (a) combining a corrosion inhibitor composition with an aqueous acid solution, the corrosion inhibitor composition comprising a benzylideneaniline compound corresponding to Formula 1 below: | 2011-06-30 |
20110155960 | ACID NUMBER REDUCTION AND HYDROLYSIS STABILIZATION OF BIO-BASED POLYESTER POLYOL COMPOSITIONS - The present invention provides polyester polyol compositions stabilized against hydrolysis and having a reduced acid number, namely, compositions comprising sterically hindered aromatic carbodiimides, the processes of making such compositions, a process for stabilizing against hydrolysis and/or reducing the acid number of polyester polyol compositions, and to the above wherein the polyols are bio-based polyester polyols such as soybean or castor oil based polyols. | 2011-06-30 |
20110155961 | SOLID ACID CATALYST AND METHOD FOR PREPARING AND USING THE SAME - A solid acid catalyst having a strong acid cation exchange resin having a cross-linking network structure and free aromatic sulfonic acids adsorbed in the network. The solid acid catalyst is prepared by treating a strong acid cation exchange resin with aromatic sulfonic acids in a solution. The catalyst is useful for synthesizing rubber antioxidant RD and other strong-acid catalyzed reactions. | 2011-06-30 |
20110155962 | ELECTRICALLY CONDUCTIVE POLYMERS WITH ENHANCED CONDUCTIVITY - An electrically conductive polymer linked to conductive nanoparticle is provided. The conductive polymer can include conductive monomers and one or more monomers in the conductive polymer can be linked to a conductive nanoparticle and can include a polymerizable moiety so that it can be incorporated into a polymer chain. The electrically conductive monomer can include a 3,4-ethylenedioxythiophene as a conductive monomer. The electrically conductive polymer having the conductive nanoparticle can be prepared into an electrically conductive layer or film for use in electronic devices. | 2011-06-30 |
20110155963 | WATER-SOLUBLE ELECTRICALLY CONDUCTIVE POLYMERS - Water-soluble electrically conductive polymers and a composition comprising such polymers are provided. Also, an electrically conductive layer or film formed from the composition, and articles comprising the electrically conductive layer or film are provided. The electrically conductive polymers according to the present disclosure have one or more hydrophilic side chains. Hydrophilic side chains are covalently bonded to the conductive polymers, which allow the polymer to be stable at high temperature. Thus, the stability of electrical conductivity is prolonged. Depending on the concentration of hydrophilic side chains, the conductivity may be changed. The hydrophilic side chains provide a successful way to fabricate a ductile film exhibiting tunable conductivity. Furthermore, high levels of surface-resistance uniformity can be achieved in the field of coating technology that uses eco-friendly water-based solvents to uniformly and quickly coat the conductive polymer on to plastic film surfaces. | 2011-06-30 |
20110155964 | Monodisperse Single-Walled Carbon Nanotube Populations and Related Methods for Providing Same - The present teachings provide methods for providing populations of single-walled carbon nanotubes that are substantially monodisperse in terms of diameter, electronic type, and/or chirality. Also provided are single-walled carbon nanotube populations provided thereby and articles of manufacture including such populations. | 2011-06-30 |
20110155965 | Polycarbonate Resin Composition Having Excellent Wear Resistance and Electric Conductivity and Method of Preparing the Same - The present invention provides a polycarbonate resin composition comprising a polycarbonate (A), a styrene copolymer resin (B), carbon nano-tubes (C) and a carbon black (D). | 2011-06-30 |
20110155966 | ELECTRICALLY CONDUCTING ORGANIC POLYMER/NANOPARTICLE COMPOSITES AND METHODS FOR USE THEREOF - Compositions are provided comprising aqueous dispersions of electrically conducting organic polymers and a plurality of nanoparticles. Films cast from invention compositions are useful as buffer layers in electroluminescent devices, such as organic light emitting diodes (OLEDs) and electrodes for thin film field effect transistors. Buffer layers containing nanoparticles have a much lower conductivity than buffer layers without nanoparticles. In addition, when incorporated into an electroluminescent (EL) device, buffer layers according to the invention contribute to higher stress life of the EL device. | 2011-06-30 |
20110155967 | PASTE COMPOSITION FOR SOLAR CELL, MANUFACTURING METHOD THEREFOR AND SOLAR CELL - The paste composition for forming a back electrode of solar cell | 2011-06-30 |
20110155968 | FINE METAL PARTICLE-CONTAINING COMPOSITION AND METHOD FOR MANUFACTURING THE SAME - A metal-containing composition that can provide, by low-temperature heat treatment, a sintered state comparable to that obtained by high-temperature heat treatment, a conductive paste, a metal film are provided. A method for manufacturing a metal-containing composition that can manufacture the metal-containing composition by simple operation steps is also provided. The metal-containing composition contains fine metal particles, and the ratio ρ | 2011-06-30 |
20110155969 | METHODS FOR ISOLATING AND PURIFYING NANOPARTICLES FROM A COMPLEX MEDIUM - A method for isolating a nanoparticle is disclosed. A medium containing a nanoparticle is provided. The medium is acidified with a weak acid. An alcoholic solvent is added to induce the nanoparticle to precipitate from the medium. The precipitated nanoparticles are separated from the medium. | 2011-06-30 |
20110155970 | MAYENITE-TYPE COMPOUND AND PROCESS FOR PRODUCTION OF SAME - The present invention relates to a mayenite-type compound in which a part of Ca of a mayenite-type compound containing Ca, Al and oxygen is substituted by at least one kind of an atom M selected from the group consisting of Be, Mg and Sr, in which the mayenite-type compound has an atom number ratio represented by M/(Ca+M) of from 0.01 to 0.50, and at least a part of free oxygen ions in a mayenite-type crystal structure are substituted by anions of an atom having electron affinity smaller than that of an oxygen atom. | 2011-06-30 |
20110155971 | HYDROTHERMAL SYNTHESIS OF NANOCUBES OF SILLENITE TYPE COMPOUNDS FOR PHOTOVOLTAIC APPLICATIONS AND SOLAR ENERGY CONVERSION OF CARBON DIOXIDE TO FUELS - The present invention relates to formation of nanocubes of sillenite type compounds, such as bismuth titanate, i.e., Bi | 2011-06-30 |
20110155972 | ONE SILICON-ALUMINATE LIGHT-CONVERSION FLUORESCENCE MATERIAL CO-ACTIVATED WITH HALOGEN FOR WHITE-LIGHT LED - One silicon-aluminate light conversion fluorescence material co-activated with halogen for white-light LED, which features a general formula as R | 2011-06-30 |
20110155973 | IMPROVED, RED COLOUR FILTER COMPOSITION - A composition, for producing dispersions, thermoplastic masses and/or colour filters, comprising (a) a colourant of formula (1) wherein 20-100 mol % R | 2011-06-30 |
20110155974 | Near Infrared Absorbing Agent and Near Infrared Absorbing Film - Disclosed herein is a method for preparing a near infrared absorbing agent. The method includes admixing tungsten trioxide and a reducing agent in water and allowing for a partial reduction of the tungsten trioxides to yield the near infrared absorbing agent. | 2011-06-30 |
20110155975 | POLYCARBONATE-POLY(ETHER-ESTER) COPOLYMER COMPOSITION, METHOD OF MANUFACTURE, AND ARTICLES THEREFROM - A composition comprising: a polycarbonate comprising units derived from a bisphenol cyclohexylidene of the formula: | 2011-06-30 |
20110155976 | ULTRAVIOLET ABSORBENT COMPOSITION - An ultraviolet absorbent composition, having ultraviolet absorbent A and a silicon compound, in which the ultraviolet absorbent A has a maximum absorption wavelength from 350 nm to 400 nm, a half value width of 55 nm or less, and the molar extinction coefficient of 20000 or more at the maximum absorption wavelength. | 2011-06-30 |
20110155977 | SYSTEM AND METHOD FOR COATING A FIRE-RESISTANT MATERIAL ON A SUBSTRATE - A method for coating a fire-resistant substance onto a carrier veil and products containing fire-resistant substances are provided. The method includes delivering a pliable carrier veil in a traveling web, drawing the carrier veil web through a reservoir defined by a nip of two rollers and containing the fire-resistant substance, where the carrier veil is coated with the fire-resistant substance. The method also includes controlling the amount of fire-resistant substance on the carrier veil web by setting a nip dimension between the two rollers, passing the carrier veil through the nip of the two rollers and providing the fire-resistant substance as a slurry suitable to coat the veil exiting the nip with a layer effective to provide a selected fire resistance. Heat is applied to the carrier veil sufficient to accelerate a curing reaction in the fire-resistant substance. A fire-resistant product includes a glass-based web, and a magnesium oxychloride complex materially coupled to the web, where the complex includes: MgCl | 2011-06-30 |
20110155978 | JACK ASSEMBLY FOR RAISING AND LOWERING VEHICLES - The various embodiments herein provide a jack assembly for raising and lowering the vehicles. The assembly comprises a base sheet mounted with two lower arms, a retentive sheet mounted with two upper arms and two shafts. The two upper arms are pivotably connected to the lower arms respectively through the two shafts. A wire rope is passed over a groove provided on a plurality of pulleys rotatably mounted on one of the two shafts. A spanner and a jack handle are provided respectively on the two shafts. When the jack handle is pulled up, the two ends of wire ropes move towards each other to make the two shafts to approach towards each other thereby displacing the lower arms and upper arms to lift the retentive sheet for raising the vehicles with a single pull movement of the jack handle. | 2011-06-30 |
20110155979 | PRYING TOOLS - A prying tool suitable for staple removal includes an elongate shaft with prying member disposed at one or both ends, (each) having a flat section terminating in a serrated, distal edge, and forming an integral fulcrum between the shaft and the serrated edge. The distal edge consists of parallel, wedge-like teeth, separated by rounded notches, each tooth tapering along its length to a sharp point at the tip, which is rounded across its width. The taper may be achieved via a forward beveled surface on the top face of the tooth. The width of the tooth may also taper from the bottom to the top face, with the top edges rounded and/or beveled. The configuration allows a tooth to engage a staple, then gradually straighten and lift it by distributing upward force evenly thereto, reducing staple breakage, and the rounded notches prevent the staple legs from lodging in the tool. | 2011-06-30 |
20110155980 | COMBINATION SCISSOR LIFT - A motorcycle lift comprising first and second frames that are stackable upon each other is disclosed. The first frame may have a wheel support which may support front and rear wheels of the motorcycle. The first frame is operative to lift the motorcycle to a first height by activation of a first jack. The second frame may be mechanically connected to the first frame and traversed to a second height by further activation of the first jack to support the motorcycle by the frame rails that cradle the engine of the motorcycle and lift the wheels off of the wheel support. | 2011-06-30 |
20110155981 | ROAD RAIL - A road rail comprises tubular posts ( | 2011-06-30 |
20110155982 | METAL FENCE ASSEMBLY WITH CONCEALED CONNECTION AND MANUFACTURING METHOD - A fencing/railing assembly adapted to be positioned between a pair of posts and mounted thereto. The assembly includes a plurality of elongate pickets and one or more rails extending transverse to the pickets. The pickets each have at least one protrusion formed or positioned thereon. The rails have an elongate channel formed on an inside portion thereof for cooperating with the protrusion. The rails further include picket openings formed in an upper portion thereof for receiving pickets therethrough. The picket openings are sized and adapted to be slipped over the pickets and securely held in place by engagement of the protrusions with the channels formed on the inside portion of the rails. The channels and the protrusions form a connection between the pickets and the rails. | 2011-06-30 |
20110155983 | Support Structure for a Screen - An elongate support member for use in a support structure for a screen made from flexible screen material. The support member is adapted to receive one or more elongate rolls of the screen material. The support member is a visually impenetrable beam whose sectional configuration defines an open W-shaped or M-shaped profile. | 2011-06-30 |
20110155984 | SELF-SELECTING PCM DEVICE NOT REQUIRING A DEDICATED SELECTOR TRANSISTOR - A Zinc Oxide (ZnO) layer deposited using Atomic Layer Deposition (ALD) over a phase-change material forms a self-selected storage device. The diode formed at the ZnO/GST interface shows both rectification and storage capabilities within the PCM architecture. | 2011-06-30 |
20110155985 | PHASE CHANGE STRUCTURE, AND PHASE CHANGE MEMORY DEVICE - A phase change structure includes a first phase change material layer pattern and a second phase change material layer pattern. The first phase change material layer pattern may partially fill a high aspect ratio structure, and the second phase change material layer pattern may fully fill the high aspect ratio structure. The first phase change material layer pattern may include a first phase change material, and the second phase change material layer pattern may include a second phase change material having a composition substantially different from a composition of the first phase change material. | 2011-06-30 |
20110155986 | DUAL RESISTANCE HEATER FOR PHASE CHANGE DEVICES AND MANUFACTURING METHOD THEREOF - A dual resistance heater for a phase change material region is formed by depositing a resistive material. The heater material is then exposed to an implantation or plasma which increases the resistance of the surface of the heater material relative to the remainder of the heater material. As a result, the portion of the heater material approximate to the phase change material region is a highly effective heater because of its high resistance, but the bulk of the heater material is not as resistive and, thus, does not increase the voltage drop and the current usage of the device. | 2011-06-30 |
20110155987 | MEMORY ELEMENT AND MEMORY DEVICE - A memory element capable of simultaneously satisfying the number of repeating operation times and a low-voltage operation characteristic which are in a tradeoff relation is provided. The memory element has a high-resistivity layer and an ion source layer between a bottom electrode and a top electrode. The high-resistivity layer is made of an oxide containing Te. Any of elements other than Te such as Al, Zr, Ta, Hf, Si, Ge, Ni, Co, Cu, and Au may be added. In the case of adding Al to Te and also adding Cu and Zr, the composition ratio of the high-resistivity layer is preferably adjusted in the ranges of 30≦Te≦100 atomic %, 0≦Al≦70 atomic %, and 0≦Cu+Zr≦36 atomic % except for oxygen. The ion source layer is made of at least one kind of metal elements and at least one kind of chalcogen elements of Te, S, and Se. | 2011-06-30 |
20110155988 | MEMORY ELEMENT AND MEMORY DEVICE - Provided are a memory element and a memory device. A memory layer is provided with an ion source layer. The ion source layer includes Zr (zirconium), Cu (copper), and Al (aluminum) as a metal element together with an ion conductive material such as S (sulfur), Se (selenium), and Te (tellurium) (chalcogen element). The amount of Al in the ion source layer is 30 to 50 atomic percent. The amount of Zr is preferably 7.5 to 25 atomic percent, and more preferably, the composition ratio of Zr to the chalcogen element in total included in the ion source layer (=Zr (atomic percent)/chalcogen element in total (atomic percent)) falls within a range from 0.2 to 0.74. | 2011-06-30 |
20110155989 | VARIABLE RESISTANCE MEMORY DEVICE AND METHODS OF FORMING THE SAME - A semiconductor memory device includes a first electrode and a second electrode, a variable resistance material pattern including a first element disposed between the first and second electrode, and a first spacer including the first element, the first spacer disposed adjacent to the variable resistance material pattern. | 2011-06-30 |
20110155990 | Continuous plane of thin-film materials for a two-terminal cross-point memory - A structure for a memory device including a plurality of substantially planar thin-film layers or a plurality of conformal thin-film layers is disclosed. The thin-film layers form a memory element that is electrically in series with first and second cladded conductors and operative to store data as a plurality of conductivity profiles. A select voltage applied across the first and second cladded conductors is operative to perform data operations on the memory device. The memory device may optionally include a non-ohmic device electrically in series with the memory element and the first and second cladded conductors. Fabrication of the memory device does not require the plurality of thin-film layers be etched in order to form the memory element. The memory element can include a CMO layer having a selectively crystallized polycrystalline portion and an amorphous portion. The cladded conductors can include a core material made from copper. | 2011-06-30 |
20110155991 | RESISTIVE MEMORY DEVICE AND FABRICATING METHOD THEREOF - A resistive memory device and a fabricating method thereof are introduced herein. In resistive memory device, a plurality of bottom electrodes is disposed in active region of a substrate. Each of the bottom electrodes is disposed to correspond to each of the conductive channels; a patterned resistance switching material layer and the patterned top electrode layer are sequentially stacked on the bottom electrodes. An air dielectric layer exists between the patterned resistance switching material layer and the bottom electrodes. A plurality of patterned interconnections is disposed on the patterned top electrode. | 2011-06-30 |
20110155992 | PHASE-SEPARATION TYPE PHASE-CHANGE MEMORY - A eutectic memory includes a eutectic memory material layer, a top and a bottom electrodes, or a left and a right electrodes. Materials of the eutectic memory layer are represented by M | 2011-06-30 |
20110155993 | PHASE CHANGE MEMORY DEVICES AND FABRICATION METHODS THEREOF - Phase change memory devices and fabrication methods thereof are presented. A phase change memory device includes a substrate structure. A first electrode is disposed on the substrate structure. A hollowed-cone hydrogen silsesquioxane (HSQ) structure is formed on the first electrode. A multi-level cell phase change memory structure is disposed on the hollowed-cone HSQ structure. A second electrode is disposed on the multi-level cell phase change memory structure. | 2011-06-30 |
20110155994 | STRUCTURES FOR RESISTANCE RANDOM ACCESS MEMORY AND METHODS OF FORMING THE SAME - Memory cells and methods of forming the same and devices including the same. The memory cells have first and second electrodes. An amorphous semiconductor material capable of electronic switching and having a first band gap is between the first and second electrodes. A material is in contact with the semiconductor material and having a second band gap, the second band gap greater than the first band gap. | 2011-06-30 |
20110155995 | Vertically Oriented Nanostructure and Fabricating Method Thereof - A vertically oriented nanometer-wires structure is disclosed. The vertically oriented nanometer-wires structure includes a non-crystalline base and many straight nanometer-wires. The straight nanometer-wires are uniformly distributed on the non-crystalline base, and the angle between each of the straight nanometer-wire and the non-crystalline base is 80-90 degrees. The straight nanometer-wires structure can be widely applied in semiconductor, optoelectronic, biological and energy field. What is worth to be noticed is that the non-crystalline base can be glass, ceramics, synthetic, resin, rubber or even metal foil, and the straight nanometer-wires and the non-crystalline base are still orthogonal to each other. | 2011-06-30 |
20110155996 | BISTABLE CARBAZOLE COMPOUNDS - Bistable carbazole compounds of formula (I) | 2011-06-30 |
20110155997 | Vertical Light emitting diode and manufacturing method of the same - The vertical light emitting diode includes a substrate having a plurality of penetrating via-holes, a plurality of nitride semiconductor layers formed on the substrate, a first electrode formed on the plurality of nitride semiconductor layers, and a second electrode formed to fill the plurality of via-holes thereby contacting part of the plurality of nitride semiconductor layers. | 2011-06-30 |
20110155998 | OSCILLATION DEVICE - An oscillation device for oscillating a terahertz wave includes a substrate, an active layer which is provided on an upper portion of the substrate and which generates a terahertz wave by intersubband transition of carrier, and a luminous layer which is provided on an upper portion of the substrate and which generates light by interband transition of carrier. In addition, the luminous layer is arranged at a position at which the light generated in the luminous layer can radiate on the active layer. | 2011-06-30 |
20110155999 | SEMICONDUCTOR LIGHT-EMITTING DEVICES HAVING CONCAVE MICROSTRUCTURES PROVIDING IMPROVED LIGHT EXTRACTION EFFICIENCY AND METHOD FOR PRODUCING SAME - A conventional semiconductor LED is modified to include a microlenslayer over its light-emitting surface. The LED may have an active layer including at least one quantum well layer of InGaN and GaN. The microlens layer includes a plurality of concave microstructures that cause light rays emanating from the LED to diffuse outwardly, leading to an increase in the light extraction efficiency of the LED. The concave microstructures may be arranged in a substantially uniform array, such as a close-packed hexagonal array. The microlens layer is preferably constructed of curable material, such as polydimethylsiloxane (PDMS), and is formed by soft-lithography imprinting by contacting fluid material of the microlens layer with a template bearing a monolayer of homogeneous microsphere crystals, to cause concave impressions, and then curing the material to fix the concave microstructures in the microlens layer and provide relatively uniform surface roughness. | 2011-06-30 |
20110156000 | METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE - A method of manufacturing a semiconductor device and the device resulted thereof is disclosed. In one aspect, the device has a heterogeneous layer stack of one or more III-V type materials, at least one transmission layer of the layer stack having a roughened or textured surface for enhancement of light transmission. The method includes (a) growing the transmission layer of a III-V type material, (b) providing a mask layer on the transmission layer, the mask layer leaving first portions of the transmission layer exposed, and (c) partially decomposing the first exposed portions of the transmission layer. Suitably redeposition occurs in a single step with decomposition, so as to obtain a textured surface based on crystal facets of a plurality of grown crystals. The resulting device has a light-emitting element. The transmission layer hereof is suitably present at the top side. | 2011-06-30 |
20110156001 | NITRIDE-BASED LIGHT-EMITTING DEVICE - A nitride-based light-emitting device includes a substrate and a plurality of layers formed over the substrate in the following sequence: a nitride-based buffer layer formed by nitrogen, a first group III element, and optionally, a second group III element, a first nitride-based semiconductor layer, a light-emitting layer, and a second nitride-based semiconductor layer. | 2011-06-30 |
20110156002 | LIGHT SOURCE HAVING LIGHT BLOCKING COMPONENTS - Light emitting systems are disclosed. The light emitting system includes an electroluminescent device that emits light at a first wavelength from a top surface of the electroluminescent device. The light emitting system further includes a construction proximate a side of the electroluminescent device for blocking light at the first wavelength that would otherwise exit the side. The light emitting system further includes a re-emitting semiconductor construction that includes a II-VI potential well. The re-emitting semiconductor construction receives the first wavelength light that exits the electroluminescent device and converts at least a portion of the received light to light of a second wavelength. The integrated emission intensity of all light at the second wavelength that exit the light emitting system is at least 4 times the integrated emission intensity of all light at the first wavelength that exit the light emitting system. | 2011-06-30 |
20110156003 | Systems and Methods for Nanowire Growth - The present invention is directed to systems and methods for nanowire growth. In an embodiment, methods for nanowire growth and doping are provided, including methods for epitaxial vertically oriented nanowire growth including providing a substrate material having one or more nucleating particles deposited thereon in a reaction chamber, introducing an etchant gas into the reaction chamber at a first temperature which gas aids in cleaning the surface of the substrate material, contacting the nucleating particles with at least a first precursor gas to initiate nanowire growth, and heating the alloy droplet to a second temperature, whereby nanowires are grown at the site of the nucleating particles. The etchant gas may also be introduced into the reaction chamber during growth of the wires to provide nanowires with low taper. | 2011-06-30 |
20110156004 | Multi-gate III-V quantum well structures - Methods of forming microelectronic structures are described. Embodiments of those methods include forming a III-V tri-gate fin on a substrate, forming a cladding material around the III-V tri-gate fin, and forming a hi k gate dielectric around the cladding material. | 2011-06-30 |
20110156005 | Germanium-based quantum well devices - A quantum well transistor has a germanium quantum well channel region. A silicon-containing etch stop layer provides easy placement of a gate dielectric close to the channel. A group III-V barrier layer adds strain to the channel. Graded silicon germanium layers above and below the channel region improve performance. Multiple gate dielectric materials allow use of a high-k value gate dielectric. | 2011-06-30 |
20110156006 | Forming A Non-Planar Transistor Having A Quantum Well Channel - In one embodiment, the present invention includes an apparatus having a substrate, a buried oxide layer formed on the substrate, a silicon on insulator (SOI) core formed on the buried oxide layer, a compressive strained quantum well (QW) layer wrapped around the SOI core, and a tensile strained silicon layer wrapped around the QW layer. Other embodiments are described and claimed. | 2011-06-30 |
20110156007 | COMPLEMENTARY LOGIC GATE DEVICE - Provided is a complementary logical gate device represented by a silicon CMOS logical circuit among semiconductor integrated logical circuits which can effectively solve the problem of the speed performance limit of an ultra-large scale integration and an ultra-low power consumption type logical circuit. The complementary logical gate includes an electron running layer formed by grapheme without using an n-channel FET or a p-channel FET, has the ambipolar characteristic, and uses only two FET having different threshold values, i.e., a first FET and a second FET. The first FET has a gate electrode short-circuited to a gate electrode of the second FET so as to constitute an input terminal. The first FET has a source electrode set to a low potential. The first FET has a drain electrode connected to a source electrode of the second FET so as to constitute an output terminal. The second FET has a drain electrode set to a high potential. | 2011-06-30 |
20110156008 | METHOD FOR IMPLEMENTING THE PI/8 GATE IN A GENUS=1 ISING SYSTEM - Disclosed herein is a protocol that enables the π/8-gate in chiral topological superconductors in which superconducting stiffness λ has been suppressed. The protocol enables a topologically protected π/8-gate in any pure Ising system that can be fabricated into genus=1 surface. By adding the π/8-gate to previously known techniques, a design for universal topologically protected quantum computation which may be implemented using rather conventional materials may be obtained. | 2011-06-30 |
20110156009 | COMPACT ELECTRICAL SWITCHING DEVICES WITH NANOTUBE ELEMENTS, AND METHODS OF MAKING SAME - An electrical device includes a substrate; first and second active areas; first and second word lines disposed in a first plane; first and second bit lines in a second plane and in electrical communication with first and second active areas; and a reference line disposed in a third plane. A nanotube element disposed in a fourth plane is in electrical communication with first and second active areas and the reference line via electrical connections at a first surface of the nanotube element. The nanotube element includes first and second regions having resistance states that are independently adjustable in response to electrical stimuli, wherein the first and second regions nonvolatilely retain the resistance states. Arrays of such electrical devices can be formed as nonvolatile memory devices. Methods for fabricating such devices are also disclosed. | 2011-06-30 |
20110156010 | SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A semiconductor device includes a gate formed over a substrate, organic semiconductor pattern interposed between the substrate and the gate, junction regions formed in the substrate on both sides of the gate, and junction patterns formed over the junction regions to contact the organic semiconductor patterns. | 2011-06-30 |
20110156011 | BLUE FLUORESCENCE COMPOUND AND ORGANIC ELECTROLUMINESCENCE DEVICE USING THE SAME - The present invention relates to a blue fluorescence compound which enables to achieve high brightness, a long lifetime and high efficiency; and an organic electroluminescence device thereof. | 2011-06-30 |
20110156012 | DOUBLE LAYER HARDMASK FOR ORGANIC DEVICES - Method of manufacturing a substrate comprising an active organic layer, the method comprising providing a substrate comprising a first layer of an organic material, depositing a second layer on the first layer of organic material, depositing a third layer on the second layer, wherein the second layer protects the first layer of organic material during the deposition of the third layer, and patterning the second layer and the third layer to form a hardmask. | 2011-06-30 |
20110156013 | COMPOUND FOR ORGANIC PHOTOELECTRIC DEVICE AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME - A compound for an organic photoelectric device and an organic photoelectric device including the same, the compound being represented by the following Chemical Formula 1: | 2011-06-30 |
20110156014 | MATERIAL FOR ORGANIC PHOTOELECTRIC DEVICE AND ORGANIC PHOTOELECTRIC DEVICE INCLUDING THE SAME - A material for an organic photoelectric device and an organic photoelectric device including the same, the material including an asymmetric compound represented by the following Chemical Formula 1: | 2011-06-30 |
20110156015 | ORGANIC LIGHT EMITTING DISPLAY DEVICE - An organic light emitting display device including: a substrate; a sealing member; an organic light emitting device between the substrate and the sealing member and for displaying images; a selective light absorbing layer on a surface of the sealing member facing the organic light emitting device and including pigments for selectively absorbing light; and a black matrix layer on the selective light absorbing layer corresponding to non-emission areas of the organic light emitting device. | 2011-06-30 |
20110156016 | ORGANIC LIGHT-EMITTING MEDIUM AND ORGANIC EL ELEMENT - An organic light-emitting medium including a diaminopyrene derivative represented by the following formula (1) and an anthracene derivative represented by the following formula (2); | 2011-06-30 |
20110156017 | NOVEL ANTHRACENE DERIVATIVES AND ORGANIC ELECTRONIC DEVICE USING SAME - The present invention provides a novel anthracene derivatives and an organic electronic device using the same. The organic electronic device according to the present invention shows excellent properties in terms of efficiency, a driving voltage, and a life span. | 2011-06-30 |
20110156018 | POLYMER COMPOUND AND POLYMER LIGHT-EMITTING DEVICE USING THE SAME - A polymer compound comprising a repeating unit represented by the formula (I): | 2011-06-30 |
20110156019 | DERIVATIZED FULLERENE-BASED DOPANTS FOR ORGANIC SEMICONDUCTORS - Methods for producing p-doped organic semiconductor material with a fullerene derivative having at least one electron-withdrawing substituent covalently attached thereto, and semiconductor compositions prepared thereby are provided. Also provided are electronic devices, such as transistors, solar-cells, illuminating devices, OLEDs and detectors, comprised of these p-doped organic semiconductor materials. | 2011-06-30 |
20110156020 | Transistor - Provided is a transistor including a semiconductor insertion layer between a channel layer and a source electrode. A potential barrier between the channel layer and the source electrode may be increased by the semiconductor insertion layer. The channel layer may be an oxide semiconductor layer. The transistor may be an enhancement mode transistor. | 2011-06-30 |
20110156021 | THIN FILM TRANSISTOR - A thin film transistor for increasing the conductivity of a channel region and suppressing the leakage current of a back channel region, and a display device including the thin film transistor, are discussed. According to an embodiment, the thin film transistor includes a gate electrode arranged on a substrate, a source electrode and a drain electrode spaced from each other on the substrate, a gate insulating film to insulate the gate electrode from the source electrode and the drain electrode, and a semiconductor layer insulated from the gate electrode through the gate insulating film, the semiconductor layer including a channel region and a back channel region, the semiconductor layer made of (In | 2011-06-30 |
20110156022 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device which includes an oxide semiconductor layer, a source electrode and a drain electrode electrically connected to the oxide semiconductor layer, a gate insulating layer covering the oxide semiconductor layer, the source electrode, and the drain electrode, and a gate electrode over the gate insulating layer is provided. The thickness of the oxide semiconductor layer is greater than or equal to 1 nm and less than or equal to 10 nm. The gate insulating layer satisfies a relation where ε | 2011-06-30 |
20110156023 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - In a semiconductor device using a nonvolatile memory, high speed erasing operation and low power consumption are realized. In a nonvolatile memory in which a channel formation region, a tunnel insulating film, and a floating gate are stacked in this order, the channel formation region is formed using an oxide semiconductor layer. In addition, a metal wiring for erasing is provided in a lower side of the channel formation region so as to face the floating gate. With the above structure, when erasing operation is performed, charge accumulated in the floating gate is extracted to the metal wiring through the channel formation region. Consequently, high speed erasing operation and low power consumption of the semiconductor device can be realized. | 2011-06-30 |
20110156024 | MEMORY DEVICE, SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE - An object is to provide a memory device which does not need a complex manufacturing process and whose power consumption can be suppressed, and a semiconductor device including the memory device. A solution is to provide a capacitor which holds data and a switching element which controls storing and releasing charge in the capacitor in a memory element. In the memory element, a phase-inversion element such as an inverter or a clocked inverter includes the phase of an input signal is inverted and the signal is output. For the switching element, a transistor including an oxide semiconductor in a channel formation region is used. In the case where application of a power supply voltage to the phase-inversion element is stopped, the data is stored in the capacitor, so that the data is held in the capacitor even when the application of the power supply voltage to the phase-inversion element is stopped. | 2011-06-30 |
20110156025 | MEMORY DEVICE AND SEMICONDUCTOR DEVICE - It is an object to provide a memory device whose power consumption can be suppressed and a semiconductor device including the memory device. As a switching element for holding electric charge accumulated in a transistor which functions as a memory element, a transistor including an oxide semiconductor film as an active layer is provided for each memory cell in the memory device. The transistor which is used as a memory element has a first gate electrode, a second gate electrode, a semiconductor film located between the first gate electrode and the second gate electrode, a first insulating film located between the first gate electrode and the semiconductor film, a second insulating film located between the second gate electrode and the semiconductor film, and a source electrode and a drain electrode in contact with the semiconductor film. | 2011-06-30 |
20110156026 | METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE - A larger substrate can be used, and a transistor having a desirably high field-effect mobility can be manufactured through formation of an oxide semiconductor layer having a high degree of crystallinity, whereby a large-sized display device, a high-performance semiconductor device, or the like can be put into practical use. A first multi-component oxide semiconductor layer is formed over a substrate and a single-component oxide semiconductor layer is formed thereover; then, crystal growth is carried out from a surface to an inside by performing heat treatment at 500° C. to 1000° C. inclusive, preferably 550° C. to 750° C. inclusive so that a first multi-component oxide semiconductor layer including single crystal regions and a single-component oxide semiconductor layer including single crystal regions are formed; and a second multi-component oxide semiconductor layer including single crystal regions is stacked over the single-component oxide semiconductor layer including single crystal regions. | 2011-06-30 |
20110156027 | SEMICONDUCTOR DEVICE - An object of one embodiment of the present invention is to provide a semiconductor device with a novel structure in which stored data can be stored even when power is not supplied in a data storing time and there is no limitation on the number of times of writing. The semiconductor device includes a first transistor which includes a first channel formation region using a semiconductor material other than an oxide semiconductor, a second transistor which includes a second channel formation region using an oxide semiconductor material, and a capacitor. One of a second source electrode and a second drain electrode of the second transistor is electrically connected to one electrode of the capacitor. | 2011-06-30 |
20110156028 | SEMICONDUCTOR DEVICE - The semiconductor device includes a source line, a bit line, a signal line, a word line, memory cells connected in parallel between the source line and the bit line, a first driver circuit electrically connected to the source line and the bit line through switching elements, a second driver circuit electrically connected to the source line through a switching element, a third driver circuit electrically connected to the signal line, and a fourth driver circuit electrically connected to the word line. The memory cell includes a first transistor including a first gate electrode, a first source electrode, and a first drain electrode, a second transistor including a second gate electrode, a second source electrode, and a second drain electrode, and a capacitor. The second transistor includes an oxide semiconductor material. | 2011-06-30 |
20110156029 | Light-Emitting Element and Ligt-Emitting Device - It is an object of the present invention to provide a light-emitting element having, between a pair of electrodes, a layer containing a light-emitting material and a transparent conductive film, wherein the electric erosion of the transparent conductive film and reflective metal can be prevented and to provide a light-emitting device using the light-emitting element. According to the present invention, a first layer | 2011-06-30 |
20110156030 | LIGHT-EMITTING ELEMENT - In the present invention, a light-emitting element operating at low driving voltage, consuming low power, emitting light with good color purity and manufactured in high yields can be obtained. A light-emitting element is disclosed with a configuration composed of a first layer containing a light-emitting material, a second layer, a third layer are formed sequentially over an anode to be interposed between the anode and a cathode in such a way that the third layer is formed to be in contact with the cathode. The second layer is made from n-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron donor property. The third layer is made from p-type semiconductor, a mixture including that, or a mixture of an organic compound having a carrier transporting property and a material having a high electron acceptor property. | 2011-06-30 |
20110156031 | SEMICONDUCTOR DEVICE - A semiconductor device is protected from static electricity introduced through bump pads and probe test pads. The semiconductor device includes a bump pad through which data is inputted, a first electrostatic discharge unit configured to discharge static electricity introduced through the bump pad, a probe test pad through which data is inputted, the probe test pad having a larger size than the bump pad, a second electrostatic discharge unit configured to discharge static electricity introduced through the probe test pad, and an input buffer unit configured to buffer the data transferred through the bump pad or the probe test pad. | 2011-06-30 |
20110156032 | METHOD OF REPAIRING PROBE PADS - A method that includes forming a first level of active circuitry on a substrate, forming a first probe pad electrically connected to the first level of active circuitry where the first probe pad having a first surface, contacting the first probe pad with a probe tip that displaces a portion of the first probe pad above the first surface, and performing a chemical mechanical polish on the first probe pad to planarize the portion of the first probe pad above the first surface. The method also includes forming a second level of active circuitry overlying the first probe pad, forming a second probe pad electrically connected to the second level of active circuitry, contacting the second probe pad with a probe tip that displaces a portion of the probe pad, and chemically mechanically polishing the second probe pad to remove the portion displaced. | 2011-06-30 |
20110156033 | METHOD AND SYSTEM FOR TRACING DIE AT UNIT LEVEL - A method and system for tracing die at unit level, comprising: assigning a first identification to a support member including a plurality of die support units; generating a second identification corresponding to a die support unit, the second identification including the first identification and a coordinate of the die support unit within the support member; correlating the second identification to a third identification of a die; attaching the die to the die support unit to generate a packaged die; and assigning the second identification to the packaged die. | 2011-06-30 |
20110156034 | REPAIR CIRCUIT AND REPAIR METHOD OF SEMICONDUCTOR APPARATUS - A repair circuit of a semiconductor apparatus includes a plurality of through-silicon vias including repeated sets of one repair through-silicon via and an M number of normal through-silicon vias; a transmission unit configured to multiplex input data at a first multiplexing rate based on control signals, and transmit the multiplexed data to the plurality of through-silicon vias; a reception unit configured to multiplex signals transmitted through the plurality of through-silicon vias at a second multiplexing rate based on the control signals, and generate output data; and a control signal generation unit configured to generate sets of the control signals based on an input number of a test signal. | 2011-06-30 |
20110156035 | DISGUISING TEST PADS IN A SEMICONDUCTOR PACKAGE - A method of forming a semiconductor package is disclosed including disguising the test pads. Test pads are defined in the conductive pattern of the semiconductor package for allowing electrical test of the completed package. The test pads are formed in shapes such as letters or objects so that they are less recognizable as test pads. | 2011-06-30 |
20110156036 | METHOD FOR DETECTING A VOID - Methods for detecting a void in an element portion of a semiconductor device having an element portion and a void detection structure are disclosed. As a part of the method, an insulating film is formed on a substrate, a plurality of holes is formed in the insulating film, and a metal portion is formed on the insulating film to fill the plurality of holes. The metal portion is polished until the insulating film is exposed and a recessed portion is formed in the void detection structure. It is determined if a void exists in the element portion of the semiconductor device by determining whether or not a void is exposed at a surface of the recessed portion of the void detection structure. | 2011-06-30 |
20110156037 | THIN FILM TRANSISTOR SUBSTRATE - A thin film transistor substrate including a thin film transistor having a drain electrode with an electrode portion, which overlaps with a semiconductor layer, and an extended portion, which extends from the electrode portion and has a portion overlapping with a storage electrode or storage electrode line. A passivation layer is arranged on the drain electrode, and it has a contact hole that partially exposes the extended portion of the drain electrode without exposing a step in the extended portion caused by the storage electrode or storage electrode line. A pixel electrode is arranged on the passivation layer and is electrically connected with the extended portion of the drain electrode through the contact hole. | 2011-06-30 |
20110156038 | ACTIVE DEVICE ARRAY SUBSTRATE - An active device array substrate including a substrate, scan lines, data lines, active devices, a first dielectric layer, a common line, a second dielectric layer, a patterned conductive layer, a third dielectric layer, and pixel electrodes is provided. At least a part of the active devices are electrically connected to the scan lines and the data lines. The first dielectric layer covers the scan lines, the data lines and the active devices. The common line is disposed on the first dielectric layer. The second dielectric layer covers the common line and the first dielectric layer. The patterned conductive layer is disposed on the second dielectric layer. The third dielectric layer covers the patterned conductive layer and the second dielectric layer. The pixel electrodes are disposed on the third dielectric layer and electrically connected to the patterned conductive layer and the active devices. | 2011-06-30 |
20110156039 | DISPLAY APPARATUS AND METHOD FOR MANUFACTURING THE SAME - A display apparatus includes a display substrate and a counter substrate. The display substrate includes a first substrate and a plurality of pixel electrodes formed on the first substrate. The counter substrate includes a second substrate facing the first substrate, a common electrode formed on the second substrate, a first spacer formed on the common electrode and making contact with the display substrate, a second spacer having a first gap with the display substrate, a third spacer having a second gap larger than the first gap with the display substrate, and a fourth spacer having a third gap larger than the second gap with the display substrate. | 2011-06-30 |
20110156040 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND METHOD FOR FABRICATING THE SAME - A thin film transistor array substrate including a substrate, a gate line intersecting a data line to define a pixel region on the substrate, a switching element disposed at an intersection of the gate line and the data line, a plurality of pixel electrodes and a plurality of first common electrodes alternately arranged in the pixel region, a second common electrode overlapping the data line and interposed between a gate insulation film and a protective film, a first storage electrode on the substrate, a second storage electrode overlapping the first storage electrode, and an organic insulation film on the switching element, the second storage electrode, the data line, a gate pad, and a data pad, wherein the second common electrode covers the data line, the protective film, the organic insulation film, and the gate insulation film, and has inclined surfaces connected to the surface of the substrate. | 2011-06-30 |
20110156041 | POLYMER SUBSTRATE AND METHOD OF FORMING THE SAME AND DISPLAY DEVICE INCLUDING THE POLYMER SUBSTRATE AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - A polymer substrate having a weight loss of less than about 1% based on an initial weight at a temperature ranging from about 420° C. to about 600° C., a method for forming the polymer substrate, a display device including the polymer substrate, and a method for manufacturing the display device. The method for forming the polymer substrate includes preparing the polymer layer and performing an annealing process to the polymer layer at a temperature greater than about 350° C. | 2011-06-30 |
20110156042 | THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF - A thin film transistor is provided with a high crystallized region in a channel formation region and a high resistance region between a source and a drain, and thus has a high electric effect mobility and a large on current. The thin film transistor includes an “impurity which suppresses generation of crystal nuclei” contained in the base layer or located on its surface, a first wiring layer over a base layer, an impurity semiconductor layer over the first wiring, a semiconductor layer over the impurity semiconductor layer, the semiconductor layer comprises a crystalline region and a region containing an amorphous phase which is formed adjacent to the base layer. | 2011-06-30 |
20110156043 | THIN FILM TRANSISTOR - A thin film transistor disposed on a substrate is provided. The thin film transistor includes a gate, a gate insulating layer, a silicon-rich channel layer, a source, and a drain. The gate is disposed on the substrate. The gate insulator is disposed over the gate. The silicon-rich channel layer is disposed above the gate, wherein the material of the silicon-rich channel layer is selected from a group consisting of silicon-rich silicon oxide (Si-rich SiOx), silicon-rich silicon nitride (Si-rich SiNx), silicon-rich silicon oxynitride (Si-rich SiOxNy), silicon-rich silicon carbide (Si-rich SiC) and silicon-rich silicon oxycarbide (Si-rich SiOC). The content (concentration) of silicon of the silicon-rich channel layer within a film depth between 10 nm to 170 nm ranges from about 1E23 atoms/cm | 2011-06-30 |
20110156044 | DENSE ARRAYS AND CHARGE STORAGE DEVICES - There is provided a monolithic three dimensional array of charge storage devices which includes a plurality of device levels, wherein at least one surface between two successive device levels is planarized by chemical mechanical polishing. | 2011-06-30 |
20110156045 | CRYSTAL MANUFACTURING APPARATUS, SEMICONDUCTOR DEVICE MANUFACTURED USING THE SAME, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME - A crystal manufacturing apparatus capable of manufacturing a crystal in a desired position on a substrate is provided. A spring has one end fixed to a mount and the other end coupled to a magnetic body. The magnetic body has one end coupled to the spring and the other end coupled to a piston. A coil is wound around the magnetic body and electrically connected between a power supply circuit and a ground node (GND). The piston has a linear member inserted in a cylinder. The cylinder has a hollow columnar shape and a small hole at a bottom surface. The cylinder holds a silicon melt. A substrate is supported by an XY stage to be opposed to the small hole of the cylinder. The power supply circuit passes pulse shaped current through the coil to move the piston in an up-down direction (DR | 2011-06-30 |
20110156046 | PHOTOMASK AND THIN-FILM TRANSISTOR FABRICATED USING THE PHOTOMASK - A photomask includes; a source electrode pattern including; a first electrode portion which extends in a first direction, a second electrode portion which extends in the first direction and is substantially parallel to the first electrode portion, and a third electrode portion which extends from a first end of the first electrode portion to a first end of the second electrode portion and is rounded with a first curvature, a drain electrode pattern which extends in the first direction and is disposed between the first electrode portion and the second electrode portion, wherein an end of the drain electrode pattern is rounded to correspond to the third electrode portion; and a channel region pattern which is disposed between the source electrode pattern and the drain electrode pattern, wherein a center location of the first curvature and a center location of the rounded portion of the end of the drain electrode pattern are the same. | 2011-06-30 |
20110156047 | NITRIDE SEMICONDUCTOR TEMPLATE AND METHOD OF MANUFACTURING THE SAME - A nitride semiconductor template and a manufacturing method thereof are provided. The nitride semiconductor template includes a carrier substrate with a first thermal expansion coefficient, a nitride semiconductor layer with a second thermal expansion coefficient different from the first thermal expansion coefficient, and a bonding layer. The nitride semiconductor layer disposed on the carrier substrate is at least 10 μm in thickness. A ratio of a dislocation density of the nitride semiconductor layer at a first surface to that at a second surface is from 0.1 to 10. The bonding layer is disposed between the carrier substrate and the nitride semiconductor layer to adhere the nitride semiconductor layer onto the carrier substrate. The second surface is near an interface between the nitride semiconductor layer and the bonding layer, and the first surface is 10 μm from the second surface. | 2011-06-30 |
20110156048 | NITRIDE-BASED SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME - A nitride-based semiconductor light-emitting device | 2011-06-30 |
20110156049 | LED DEVICE AND FABRICATION METHOD THEREOF - A LED device includes a n-type first semiconductor layer, a p-type second semiconductor layer, an active layer between the first semiconductor layer and the second semiconductor layer, an electrode positioned on a surface of the second semiconductor layer away from the active layer, and an ohmic contacting layer positioned on a surface of the second semiconductor layer away from the active layer. The ohmic contacting layer includes a resistance region corresponding to the electrode and a conductive region surrounding the resistance region, in which the conductive region having less resistance than that of the resistance region. | 2011-06-30 |
20110156050 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME - The semiconductor device includes a GaN-based layered body having an opening and including an n-type drift layer and a p-type layer located on the n-type drift layer, a regrown layer including a channel and located so as to cover the opening, and a gate electrode located on the regrown layer and formed along the regrown layer, wherein the opening reaches the n-type drift layer, and an edge of the gate electrode is not located outside a region of the p-type layer when viewed in plan. | 2011-06-30 |
20110156051 | SEMICONDUCTOR DEVICES WITH LOW LEAKAGE SCHOTTKY CONTACTS - Embodiments include semiconductor devices with low leakage Schottky contacts. An embodiment is formed by providing a partially completed semiconductor device including a substrate, a semiconductor on the substrate, and a passivation layer on the semiconductor, and using a first mask, locally etching the passivation layer to expose a portion of the semiconductor. Without removing the first mask, a Schottky contact is formed of a first material on the exposed portion of the semiconductor, and the first mask is removed. Using a further mask, a step-gate conductor of a second material electrically coupled to the Schottky contact is formed overlying parts of the passivation layer adjacent to the Schottky contact. By minimizing the process steps between opening the Schottky contact window in the passivation layer and forming the Schottky contact material in this window, the gate leakage of a resulting field effect device having a Schottky gate may be substantially reduced. | 2011-06-30 |