26th week of 2012 patent applcation highlights part 15 |
Patent application number | Title | Published |
20120161081 | COMPOSITION FOR PRINTING ELECTRODES - The invention relates to a composition for printing electrodes on a substrate, comprising 30 to 90% by weight of electrically conductive particles, 0 to 7% by weight of glass frit, 0.1 to 5% by weight of at least one absorbent for laser radiation, 0 to 8% by weight of at least one matrix material, 0 to 8% by weight of at least one organometallic compound, 3 to 50% by weight of water as a solvent, 0 to 65% by weight of at least one retention aid and 0 to 5% by weight of at least one additive, based in each case on the total mass of the composition. The invention further relates to a use of the composition. | 2012-06-28 |
20120161082 | PASTE COMPOSITION FOR REAR ELECTRODE OF SOLAR CELL AND SOLAR CELL INCLUDING THE SAME - A paste composition for a rear electrode of a solar cell according to an embodiment comprises conductive powder including a first powder having a first mean particle diameter, a second powder having a second mean particle diameter larger than the first mean particle diameter, and a third powder having a third mean particle diameter larger than the second mean particle diameter, and an organic vehicle. | 2012-06-28 |
20120161083 | Electrode - The present invention relates to an electrode composed of an Al-M-Cu based alloy, to a process for preparing the Al-M-Cu based alloy, to an electrolytic cell comprising the electrode, to the use of an Al-M-Cu based alloy as an anode and to a method for extracting a reactive metal from a reactive metal-containing source using an Al-M-Cu based alloy as an anode. | 2012-06-28 |
20120161084 | AFFECTING THE THERMOELECTRIC FIGURE OF MERIT (ZT) AND THE POWER FACTOR BY HIGH PRESSURE, HIGH TEMPERATURE SINTERING - A method for increasing the ZT of a semiconductor, involves creating a reaction cell including a semiconductor in a pressure-transmitting medium, exposing the reaction cell to elevated pressure and elevated temperature for a time sufficient to increase the ZT of the semiconductor, and recovering the semiconductor with an increased ZT. | 2012-06-28 |
20120161085 | High Fire-Point Esters as Electrical Insulating Oils - Provided is an electrical insulating oil formulation comprising at least one diester or triester species having ester links on adjacent carbons, and an anti-oxidant additive. The formulation exhibits an excellent balance of the pour point, viscosity and fire point properties, and is imminently suitable for use as a transformer oil. | 2012-06-28 |
20120161086 | Optical Film - Provided is an optical film using a cellulose derivative, which is used in image display devices such as liquid-crystal display devices. A liquid-crystal display device with a polarizing plate using the optical film has an excellent viewing angle property. More particularly, the present invention relates to an optical film made of a cellulose ester resin, a portion of hydrogen atoms of hydroxyl groups of which is substituted with two or more substituent groups. | 2012-06-28 |
20120161087 | Photosensitive Resin Composition and Color Filter Using the Same - A photosensitive resin composition for a color filter including a colorant including a dye represented by the following Chemical Formula 1, (B) an acrylic-based binder resin, (C) a photopolymerizable monomer, (D) a photopolymerization initiator, and (E) a solvent, and a color filter using the same are provided. | 2012-06-28 |
20120161088 | Photosensitive Resin Composition and Color Filter Using the Same - Disclosed is a photosensitive resin composition including (A) a photopolymerizable monomer including a compound represented by the following Chemical Formula 1, wherein the substituents of Chemical Formula 1 are the same as defined in the specification, (B) a binder resin, (C) a photopolymerization initiator, (D) a pigment and (E) a solvent, and a color filter using the same. | 2012-06-28 |
20120161089 | CHROMENE COMPOUND - A chromene compound having a skeleton represented by the following formula (1) and exhibiting double peak characteristic: | 2012-06-28 |
20120161090 | RUTILE-TYPE TITANIUM OXIDE CRYSTAL AND MID-INFRARED FILTER USING THE SAME - A highly versatile material for mid-infrared filters is provided by precisely controlling the absorption intensity of titanium oxide in an infrared region. A rutile-type titanium oxide crystal is produced by a method including a step (I) of dispersing or dissolving a complex of an amino group-containing basic polymer and a transition metal ion in an aqueous medium, a step (II) of obtaining a composite having a polymer/titania layered structure in which the complex of the amino group-containing basic polymer and the transition metal ion is sandwiched between layers of titania, by causing a hydrolysis reaction between the aqueous dispersion or aqueous solution prepared in the step (I) and a water-soluble titanium compound in the aqueous medium, and a step (III) of calcining the composite having the layered structure in an air atmosphere at a temperature of 650° C. or higher to dope a surface of a titanium oxide crystal with the transition metal ion and simultaneously to cause growth into a rutile-type crystal phase. The thus-obtained crystal can be used for mid-infrared filters. | 2012-06-28 |
20120161091 | SINGLE-USE JACK - A compact, easy to use, single-use jack is provided. The jack includes an expandable volume formed from nested cylinders and a mechanism to fill the volume, under pressure, with a foam. When the foam is released, the volume expands, increasing the height of the jack. The jack may be safely stored and may be actuated to provide force when needed. | 2012-06-28 |
20120161092 | PHASE CHANGE MEMORY AND METHOD FOR FABRICATING THE SAME - The invention provides a phase change memory and a method for forming the phase change memory. The phase change memory includes a storage region and a peripheral circuit region. The peripheral circuit region has a peripheral substrate, a plurality of peripheral shallow trench isolation (STI) units in the peripheral substrate, and at least one MOS transistor on the peripheral substrate and between the peripheral STI units. The storage region has a storage substrate, an N-type ion buried layer on the storage substrate, a plurality of vertical LEDs on the N-type ion buried layer, a plurality of storage shallow trench isolation (STI) units between the vertical LEDs, and a plurality of phase change layers on the vertical LED and between the storage STI units. The storage STI units have thickness substantially equal to thickness of the vertical LEDs. The peripheral STI units have thickness substantially equal to thickness of the storage STI units. The N-type conductive region contains SiC. A top of P-type conductive region is flush with a top of the peripheral substrate. The N-type conductive region containing SiC reduces drain current through the vertical LED and raises current efficiency of the vertical LED. The peripheral circuit region can work normally without adverse influence on performance of the phase change memory. | 2012-06-28 |
20120161093 | Via-Configurable High-Performance Logic Block Architecture - A via-configurable circuit block may contain chains of p-type and n-type transistors that may or may not be interconnected by means of configurable vias. Configurable vias may also be used to connect various transistor terminals to a ground line, a power line and/or to various terminals that may provide connections outside of the circuit block. | 2012-06-28 |
20120161094 | 3D SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - The present application discloses a 3D semiconductor memory device having 1T1R memory configuration based on a vertical-type gate-around transistor, and a manufacturing method thereof. A on/off current ratio can be well controlled by changing a width and a length of a channel of the gate-around transistor, so as to facilitate multi-state operation of the 1T1R memory cell. Moreover, the vertical transistor has a smaller layout size than a horizontal transistor, so as to reduce the layout size effectively. Thus, the 3D semiconductor memory device can be integrated into an array with a high density. | 2012-06-28 |
20120161095 | SEMICONDUCTOR MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - Provided are a variable resistance semiconductor memory device which changes its resistance without being affected by an underlying layer and is suitable as a memory device of increased capacity, and a method of manufacturing the same. The semiconductor memory device in the present invention includes: a first contact plug ( | 2012-06-28 |
20120161096 | PHASE CHANGE MEMORY DEVICE WITH VOLTAGE CONTROL ELEMENTS - A phase change memory device with reduced programming disturbance and its operation are described. The phase change memory includes an array with word lines and bit lines and voltage controlling elements coupled to bit lines adjacent to an addressed bit line to maintain the voltage of the adjacent bit lines within an allowed range. | 2012-06-28 |
20120161097 | PHASE CHANGE MEMORY AND METHOD FOR FABRICATING THE SAME - The invention provides a phase change memory and a method for forming the phase change memory. The phase change memory includes a storage region and a peripheral circuit region. The peripheral circuit region has a peripheral substrate, peripheral shallow trench isolation (STI) units in the peripheral substrate, and MOS transistors on the peripheral substrate and between the peripheral STI units. The storage region has a storage substrate, an N-type ion buried layer on the storage substrate, vertical LEDs on the on the N-type ion buried layer, storage shallow trench isolation (STI) units between the vertical LEDs, and phase change layers on the vertical LEDs and between the storage STI units. The storage STI units have thickness equal to thickness of the vertical LEDs. Each vertical LED comprises an N-type conductive region on the N-type ion buried layer, and a P-type conductive region on the N-type conductive region. The P-type conductive region contains SiGe. The peripheral STI units have thickness equal to thickness of the storage STI units. A top of P-type conductive region is flush with a top of the peripheral substrate. The P-type conductive region containing SiGe reduces drain current through the vertical LED and raises current efficiency of the vertical LED. The peripheral circuit region can work normally without adverse influence on performance of the phase change memory. | 2012-06-28 |
20120161098 | SUBSTRATE, MANUFACTURING METHOD OF SUBSTRATE, SEMICONDUCTOR ELEMENT, AND MANUFACTURING METHOD OF SEMICONDUCTOR ELEMENT - A semiconductor device is provided which is produced from a high-quality and large-area graphene substrate and is capable of fully exhibiting superior electronic properties that graphene inherently has. The semiconductor device is capable of realizing increased operation speed, reduced power consumption, and higher degree of integration, and thus is capable of improving the reliability and productivity. Electrical short circuit between a graphene layer ( | 2012-06-28 |
20120161099 | NITIRDE SEMICONDUCTOR LIGHT EMITTING DIODE - A nitride semiconductor LED device including an N-type doped layer, an active layer and a P-type doped layer is provided. The active layer is disposed on the N-type doped layer and includes at least one quantum well structure. The quantum well structure includes two quantum barrier layers and a quantum well sandwiched between the quantum barrier layers. The quantum barrier layer is a super-lattice structure including a quaternary nitride semiconductor. The P-type doped layer is disposed on the active layer. | 2012-06-28 |
20120161100 | LIGHT EMITTING DIODE AND MAKING METHOD THEREOF - An LED includes a substrate, an N-type GaN layer, an insulation layer, an N-type GaN nano-wire layer, a quantum well layer and a P-type GaN nano-wire layer. The N-type GaN layer and the insulation layer are arranged on the substrate in turn. At least one groove is formed on a top surface of the insulation layer, therefore, part of the N-type GaN layer is exposed. The N-type GaN nano-wire layer is formed on the groove of the insulation layer, and part of the N-type GaN nano-wire layer is protruded from the insulation layer. The quantum well layer and the P-type GaN nano-wire layer are coated on the part of the N-type GaN nano-wire layer which is protruded from the insulation layer. The present invention also relates to a method for making an LED. | 2012-06-28 |
20120161101 | WATER STABLE III-V SEMICONDUCTOR NANOCRYSTAL COMPLEXES AND METHODS OF MAKING SAME - A water-stable semiconductor nanocrystal complex that is stable and has high luminescent quantum yield. The water-stable semiconductor nanocrystal complex has a semiconductor nanocrystal core of a III-V semiconductor nanocrystal material and a water-stabilizing layer. A method of making a water-stable semiconductor nanocrystal complex is also provided. | 2012-06-28 |
20120161102 | LIGHT EMITTING DEVICE, METHOD FOR FABRICATING THE SAME, AND LIGHT EMITTING DEVICE PACKAGE - A light emitting device is provided. The light emitting device comprises an active layer comprising a plurality of well layers and barrier layers. The barrier layers comprise a first barrier layer which is the nearest to a second conductive type semiconductor layer and has a first band gap, a second barrier layer having a third band gap, and a third barrier layer having the first band gap between the second barrier layer and a first conductive type semiconductor layer. The well layers comprise a first well layer having a second band gap between the first and the second barrier layers, and a second well layer between the second barrier layer and the third barrier layer. The second barrier layer is disposed between the first and the second well layers, and the third band gap is narrower than the first band gap and wider than the second band gap. | 2012-06-28 |
20120161103 | ELECTRICALLY PUMPED OPTOELECTRONIC SEMICONDUCTOR CHIP - An electrically pumped optoelectronic semiconductor chip includes at least two radiation-active quantum wells comprising InGaN or consisting thereof. The optoelectronic semiconductor chip includes at least two cover layers which include AlGaN or consist thereof. Each of the cover layers is assigned to precisely one of the radiation-active quantum wells. The cover layers are each located on a p-side of the associated radiation-active quantum well. The distance between the radiation-active quantum well and the associated cover layer is at most 1.5 nm. | 2012-06-28 |
20120161104 | ULTRAVIOLET IRRADIATION DEVICE - An ultraviolet irradiation device having a simple structure without using a pn junction, which can efficiently utilize a surface plasmon polariton and can emit ultraviolet light of a specific wavelength at a high efficiency. The device has at least one semiconductor multilayer film element and an electron beam irradiation source which are provided in a container having an ultraviolet-ray transmitting window and is vacuum-sealed, wherein the film element has an active layer formed of In | 2012-06-28 |
20120161105 | UNIAXIALLY STRAINED QUANTUM WELL DEVICE AND METHOD OF MAKING SAME - A planar or non-planar quantum well device and a method of forming the quantum well device. The device includes: a buffer region comprising a large band gap material; a uniaxially strained quantum well channel region on the buffer region; an upper barrier region comprising a large band gap material on the quantum well channel region; a gate dielectric on the quantum well channel region; a gate electrode on the gate dielectric; and recessed source and drain regions at respective sides of the gate electrode, the source and drain regions including a junction material having a lattice constant different from a lattice constant of a material of the buffer region. Preferably, the buffer region comprises a Si | 2012-06-28 |
20120161106 | PHOTODETECTOR USING A GRAPHENE THIN FILM AND NANOPARTICLES, AND METHOD FOR PRODUCING THE SAME - Provided are a photodetector (PD) using a graphene thin film and nanoparticles and a method of fabricating the same. The PD includes a graphene thin film having a sheet shape formed by means of a graphene deposition process using a vapor-phase carbon (C) source and a nanoparticle layer formed on the graphene thin film and patterned to define an electrode region of the graphene thin film, the nanoparticle layer being formed of nanoparticles without a matrix material. The PD has a planar structure using the graphene thin film as a channel and an electrode and using nanoparticles as a photovoltaic material (capable of forming electron-hole pairs due to photoelectron-motive force caused by ultraviolet (UV) light). Since the PD has a very simple structure, the PD may be fabricated at low cost with high productivity. Also, the PD includes the graphene thin film to reduce power consumption. | 2012-06-28 |
20120161107 | ORGANIC ELECTROLUMINESCENT DEVICE - [Problem] To provide an organic EL device having high efficiency, low driving voltage and long life by combining various materials for the organic EL device which are excellent in hole and electron injection/transport performances, stability as a thin film and durability. | 2012-06-28 |
20120161108 | TETRAHYDROTETRAAZAPENTACENES IN THIN-FILM TRANSISTORS - Compounds of Formula (I) are disclosed: | 2012-06-28 |
20120161109 | SMALL MOLECULE SEMICONDUCTOR - Disclosed is a small molecule semiconductor of Formula (I): | 2012-06-28 |
20120161110 | SEMICONDUCTOR COMPOSITION - An electronic device, such as a thin-film transistor, includes a semiconducting layer formed from a semiconductor composition. The semiconductor composition comprises a polymer binder and a small molecule semiconductor of Formula (I): | 2012-06-28 |
20120161111 | WHITE ORGANIC LIGHT ELECTROLUMINESCENCE DEVICE - A white organic light electroluminescence device includes a first light emitting unit, a second light emitting unit and a connecting layer between the first light emitting unit and the second light emitting unit. The connecting layer electrically connects the first light emitting unit and the second light emitting unit in series. The first light emitting unit includes a first electrode layer, a first light emitting layer on first electrode layer, and an intrinsic layer. The first light emitting layer has a first blue light emitting layer and a red light emitting layer, and the intrinsic layer is between the first blue light emitting layer and the red light emitting layer. The second light emitting unit includes a second light emitting layer and a second electrode layer on the second light emitting layer. The second light emitting layer has a second blue light emitting layer and a green light emitting layer. | 2012-06-28 |
20120161112 | Diode for a Printable Composition - An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between about 2.5 to 7 microns; a first terminal coupled to the light emitting region on a first side, the first terminal having a height between about 1 to 6 microns; and a second terminal coupled to the light emitting region on a second side opposite the first side, the second terminal having a height between about 1 to 6 microns. | 2012-06-28 |
20120161113 | Diode for a Printable Composition - An exemplary printable composition of a liquid or gel suspension of diodes comprises a plurality of diodes, a first solvent and/or a viscosity modifier. An exemplary diode comprises: a light emitting or absorbing region having a diameter between about 20 and 30 microns and a height between 2.5 to 7 microns; a plurality of first terminals spaced apart and coupled to the light emitting region peripherally on a first side, each first terminal of the plurality of first terminals having a height between about 0.5 to 2 microns; and one second terminal coupled centrally to a mesa region of the light emitting region on the first side, the second terminal having a height between 1 to 8 microns. | 2012-06-28 |
20120161114 | White Organic Light Emitting Device and Display Device Using the Same - A white organic light emitting device and a display device using the same to which a 2-peak spectrum is applied to execute white display comprises a first electrode and a second electrode disposed opposite each other on a substrate, and a blue light emitting unit and a phosphorescent light emitting unit provided between the first electrode and the second electrode, and a 2-peak white spectrum is formed through a first light emitting peak of the blue light emitting unit at a wavelength of 430 nm to 460 nm and a second light emitting peak of the phosphorescent light emitting unit at a wavelength of 530 nm to 630 nm. | 2012-06-28 |
20120161115 | Light-Emitting Device and Lighting Device - A light-emitting device including a reflection member, a sealing member having a light-transmitting property, and a light-emitting element between the reflection member and the sealing member is provided. In the light-emitting device, the light-emitting element includes a first transparent electrode; a second transparent electrode; and an EL layer between the first transparent electrode and the second transparent electrode, the reflection member includes a reflective electrode having projections and an electric resistance lower than an electric resistance of the first transparent electrode; and a planarization film covering the reflective electrode, a through hole that reaches the reflective electrode is formed in the planarization film, and the reflective electrode is electrically connected to the first transparent electrode. | 2012-06-28 |
20120161116 | Lighting Device - A lighting device includes a plurality of organic EL light-emitting devices having organic EL elements, and a plurality of LEDs. The LEDs are provided as point light sources, and the organic EL light-emitting devices are provided as surface light sources. Using an LED which emits blue light and an organic EL element which emits yellow light, white light can be obtained. The LEDs are provided on the back side or the front side of the organic EL light-emitting devices so that light from the LEDs pass between the two organic EL light-emitting devices. Accordingly, light can be extracted from the LEDs without allowing the LED light to pass through the organic EL elements. Further, the organic EL element is sealed by two substrates and a sealant, whereby deterioration due to moisture or oxygen can be prevented. | 2012-06-28 |
20120161117 | P-TYPE MATERIALS AND ORGANIC ELECTRONIC DEVICES - There is presently provided compounds of formula (I), which are useful as p-type semiconductor materials and in devices comprising such p-type semiconductor materials. | 2012-06-28 |
20120161118 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed are a semiconductor device, which forms two insulation layers having different patterns by one mask process, and a method of manufacturing the same. In a semiconductor device having double insulation layers, a photosensitive material is included in an upper insulation layer. During a manufacture of the semiconductor device, the photosensitive material is used as a photo resist layer in order to reduce the number of masks. | 2012-06-28 |
20120161119 | AROMATIC AMINE DERIVATIVE AND ORGANIC ELECTROLUMINESCENCE DEVICE - An aromatic amine derivative having a specific structure. An organic electroluminescence device which is composed of one or more organic thin film layers sandwiched between a cathode and an anode, wherein at least one of the organic thin film layers, especially a hole transporting layer, contains the aromatic amine derivative. The aromatic amine derivative has at least one substituted or unsubstituted dibenzofuran skeleton and at least one substituted or unsubstituted terphenylene skeleton. Because the molecules in the aromatic amine derivate hardly crystallize, organic electroluminescence devices improving their production yield and having prolonged lifetime are provided. | 2012-06-28 |
20120161120 | COMPOSITIONS OF ELECTRICALLY CONDUCTING POLYMERS MADE WITH ULTRA-PURE FULLY-FLUORINATED ACID POLYMERS - There is provided an electrically conductive polymer composition. The composition contains an electrically conductive polymer made with an ultra-pure fully-fluorinated acid polymer. | 2012-06-28 |
20120161121 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions. | 2012-06-28 |
20120161122 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided. A semiconductor device is provided with an oxide semiconductor film including a pair of second oxide semiconductor regions which are amorphous regions and a first oxide semiconductor region located between the pair of second oxide semiconductor regions, a gate insulating film, and a gate electrode provided over the first oxide semiconductor region with the gate insulating film interposed therebetween. One or more kinds of elements selected from Group 15 elements such as nitrogen, phosphorus, and arsenic are added to the second oxide semiconductor regions. | 2012-06-28 |
20120161123 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A miniaturized semiconductor device including a transistor in which a channel formation region is formed using an oxide semiconductor film and variation in electric characteristics due to a short-channel effect is suppressed is provided. In addition, a semiconductor device whose on-state current is improved is provided. A semiconductor device is provided with an oxide semiconductor film including a pair of second oxide semiconductor regions which are amorphous regions and a first oxide semiconductor region located between the pair of second oxide semiconductor regions, a gate insulating film, and a gate electrode provided over the first oxide semiconductor region with the gate insulating film interposed therebetween. Hydrogen or a rare gas is added to the second oxide semiconductor regions. | 2012-06-28 |
20120161124 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - A semiconductor device in which fluctuation in electric characteristics due to miniaturization is less likely to be caused is provided. The semiconductor device includes an oxide semiconductor film including a first region, a pair of second regions in contact with side surfaces of the first region, and a pair of third regions in contact with side surfaces of the pair of second regions; a gate insulating film provided over the oxide semiconductor film; and a first electrode that is over the gate insulating film and overlaps with the first region. The first region is a CAAC oxide semiconductor region. The pair of second regions and the pair of third regions are each an amorphous oxide semiconductor region containing a dopant. The dopant concentration of the pair of third regions is higher than the dopant concentration of the pair of second regions. | 2012-06-28 |
20120161125 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device capable of high speed operation is provided. Further, a highly reliable semiconductor device is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed in such a manner that one or more of elements selected from rare gases and hydrogen are added to the semiconductor layer by an ion doping method or an ion implantation method with the use of a channel protective layer as a mask. | 2012-06-28 |
20120161126 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A semiconductor device capable of high speed operation is provided. Further, a semiconductor device in which change in electric characteristics due to a short channel effect is hardly caused is provided. An oxide semiconductor having crystallinity is used for a semiconductor layer of a transistor. A channel formation region, a source region, and a drain region are formed in the semiconductor layer. The source region and the drain region are formed by self-aligned process in which one or more elements selected from Group 15 elements are added to the semiconductor layer with the use of a gate electrode as a mask. The source region and the drain region can have a wurtzite crystal structure. | 2012-06-28 |
20120161127 | MEMORY DEVICE, MEMORY MODULE AND ELECTRONIC DEVICE - The first transistor includes first and second electrodes which are a source and a drain, and a first gate electrode overlapping with a first channel formation region with an insulating film provided therebetween. The second transistor includes third and fourth electrodes which are a source and a drain, and a second channel formation region which is provided between a second gate electrode and a third gate electrode with insulating films provided between the second channel formation region and the second gate electrode and between the second channel formation region and the third gate electrode. The first and second channel formation regions contain an oxide semiconductor, and the second electrode is connected to the second gate electrode. | 2012-06-28 |
20120161128 | DIE PACKAGE - According to one embodiment, a die package is provided comprising a first die structure with a first plurality of switching elements wherein controlled current input terminals of the first plurality of switching elements are electrically coupled by a common contact region and wherein controlled current output terminals of the first plurality of switching elements are insulated from each other; a second die structure with a second plurality of switching elements wherein controlled current output terminals of the second plurality of switching elements are coupled by a common contact region and wherein controlled current input terminals of the second plurality of switching elements are insulated from each other; and wherein, for each of the first plurality of switching elements, the output terminal of the switching element is coupled with the input terminal of at least one switching element of the second plurality of switching elements. | 2012-06-28 |
20120161129 | METHOD AND APPARATUS OF FABRICATING A PAD STRUCTURE FOR A SEMICONDUCTOR DEVICE - The present disclosure involves a semiconductor device. The semiconductor device includes a substrate and an interconnect structure that is formed over the substrate. The interconnect structure has a plurality of metal layers. A first region and a second region each extend through both the interconnect structure and the substrate. The first and second regions are mutually exclusive. The semiconductor device includes a plurality of bond pads disposed above the first region, and a plurality of probe pads disposed above the second region. The semiconductor device also includes a plurality of conductive components that electrically couple at least a subset of the bond pads with at least a subset of the probe pads. Wherein each one of the subset of the bond pads is electrically coupled to a respective one of the subset of the probe pads through one of the conductive components. | 2012-06-28 |
20120161130 | ELECTRODE, PHOTOELECTRIC CONVERSION DEVICE USING THE ELECTRODE, AND MANUFACTURING METHOD THEREOF - A minute electrode, a photoelectric conversion device including the minute electrode, and manufacturing methods thereof are provided. A plurality of parallel groove portions and a region sandwiched between the groove portions are formed in a substrate, and a conductive resin is supplied to the groove portions and the region and is fixed, whereby the groove portions are filled with the conductive resin and the region is covered with the conductive resin. The supplied conductive resin is not expanded outward, and the electrode with a designed width can be formed. Part of the electrode is formed over the region sandwiched between the groove portions, thus, the area of a cross section in the short axis direction can be large, and a low resistance in the long axis direction can be obtained. | 2012-06-28 |
20120161131 | THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A thin-film transistor (“TFT”) substrate includes a metal wiring including copper or a copper alloy on a substrate, an inorganic layer on an upper surface and side surfaces of the metal wiring to surround the metal wiring, the inorganic layer in direct contact with the metal wiring, and a planarization layer on the inorganic layer and in direct contact with the inorganic layer. | 2012-06-28 |
20120161132 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - An object is to provide a novel semiconductor device which can store data even when power is not supplied in a data storing time and which does not have a limitation on the number of writing operations. The semiconductor device includes a transistor and a capacitor. The transistor includes a first oxide semiconductor layer, a source electrode and a drain electrode which are in contact with the first oxide semiconductor layer, a gate electrode overlapping with the first oxide semiconductor layer, and a gate insulating layer between the first oxide semiconductor layer and the gate electrode. The capacitor includes the source electrode or the drain electrode, a second oxide semiconductor layer in contact with the source electrode or the drain electrode, and a capacitor electrode in contact with the second oxide semiconductor layer. | 2012-06-28 |
20120161133 | SEMICONDUCTOR DEVICE - An object of one embodiment of the disclosed invention is to provide a semiconductor device having a novel structure in which stored data can be held even when power is not supplied and the number of times of writing is not limited. The semiconductor device is formed using an insulating layer formed over a supporting substrate and, over the insulating layer, a highly purified oxide semiconductor and single crystal silicon which is used as a sililcon on insulator (SOI). A transistor formed using a highly purified oxide semiconductor can hold data for a long time because leakage current thereof is extremely small. Further, by using an SOI substrate and utilizing features of thin single crystal silicon formed over an insulating layer, fully-depleted transistors can be formed; therefore, a semiconductor integrated circuit with high added values such as high integration, high-speed driving, and low power consumption can be obtained. | 2012-06-28 |
20120161134 | Thin film transistor and flat display device - A thin film transistor (TFT) includes a scan line on a substrate, the scan line including a straight portion extending along a first direction, an active layer including an oxide semiconductor and overlapping the straight portion of the scan line, the active layer having a first region, a second region, and a third region that are linearly and sequentially aligned along the first direction, a first insulating layer between the active layer and the scan line, a first electrode connected to the first region of the active layer, and a second electrode connected to the third region of the active layer. | 2012-06-28 |
20120161135 | PIXEL STRUCTURE - A pixel structure having an SMII (semiconductor-metal-insulator-ITO) capacitor is provided. Specifically, a partial region of a transparent electrode layer corresponding to a semiconductor layer is removed, so as to eliminate parasitic capacitance between the transparent electrode layer and the semiconductor layer, prevent defects (e.g., waterfall, image sticking, etc.) from occurring on the display frame, and improve the display quality. | 2012-06-28 |
20120161136 | THIN FILM TRANSISTOR ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - A thin film transistor (TFT) array substrate with few processing steps and simple structure is provided, wherein merely two patterned metal layers are required and a patterned planarization layer is adopted to separate the two patterned metal layers from each other and thereby reduce power loading. In addition, the patterned planarization layer has slots to form height differences so as to separate scan lines from common electrodes to further reduce the power loading. | 2012-06-28 |
20120161137 | ARRAY SUBSTRATE FOR IN-PLANE SWITCHING MODE LIQUID CRYSTAL DISPLAY DEVICE AND FABRICATING METHOD THEREOF - An array for an in-plane switching (IPS) mode liquid crystal display device includes a gate line formed on a substrate to extend in a first direction, a common line formed on the substrate to extend in the first direction, a data line formed to extend in a second direction, a thin film transistor formed at an intersection between the gate line and the data line, wherein the thin film transistor includes a gate line, a gate insulating layer, an active layer, a source electrode, and a drain electrode, a passivation film formed on the substrate including the thin film transistor, a pixel electrode formed on the passivation film located on a pixel region defined by the gate line and the data line, the pixel electrode being electrically connected to the drain electrode, a common electrode formed on the passivation film, and a common electrode connection line connected to the common electrode and the common line, wherein the common electrode connection line overlaps with the common line and the drain electrode. | 2012-06-28 |
20120161138 | SEMICONDUCTOR TRANSISTOR MANUFACTURING METHOD, DRIVING CIRCUIT UTILIZING A SEMICONDUCTOR TRANSISTOR MANUFACTURED ACCORDING TO THE SEMICONDUCTOR TRANSISTOR MANUFACTURING METHOD, PIXEL CIRCUIT INCLUDING THE DRIVING CIRCUIT AND A DISPLAY ELEMENT, DISPLAY PANEL HAVING THE PIXEL CIRCUITS DISPOSED IN A MATRIX, DISPLAY APPARATUS PROVIDED WITH THE DISPLAY PANEL - Provided is a manufacturing method for a semiconductor transistor comprising: forming a resist layer containing resist material on a base layer including a substrate; patterning the resist layer to form apertures therein; forming a metal layer by disposing metallic material to cover the resist layer and to fill the apertures formed in the resist layer; removing a metal oxide layer formed by oxidation of a top surface of the metal layer by performing cleaning by using a cleaning liquid; forming the source electrode and the drain electrode by removing the resist layer by using a dissolution liquid different from the cleaning liquid, the source electrode and the drain electrode constituted of the metallic material having been disposed in the apertures; and forming a semiconductor layer so as to cover the source electrode and the drain electrode. | 2012-06-28 |
20120161139 | SEMICONDUCTOR CIRCUIT, METHOD FOR DRIVING THE SAME, STORAGE DEVICE, REGISTER CIRCUIT, DISPLAY DEVICE, AND ELECTRONIC DEVICE - A semiconductor circuit capable of controlling and holding the threshold voltage of a transistor at an optimal level and a driving method thereof are disclosed. A storage device, a display device, or an electronic device including the semiconductor circuit is also provided. The semiconductor circuit comprises a diode and a first capacitor provided in a node to which a transistor to be controlled is connected through its back gate. This structure allows the application of desired voltage to the back gate so that the threshold voltage of the transistor is controlled at an optimal level and can be held for a long time. A second capacitor connected in parallel with the diode is optionally provided so that the voltage of the node can be changed temporarily. | 2012-06-28 |
20120161140 | TFT ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - An thin film transistor array and a manufacturing method thereof are provided. A thin film transistor (TFT) array substrate comprises a base substrate, horizontal gate lines, reticulated storage capacitor electrode (Vcom) lines, longitudinal data lines defining pixel units with the horizontal gate lines. The Vcom lines corresponding to the pixel units in each row of the reticulated Vcom line are connected with each other, and the reticulated Vcom lines are connected with an integrated-circuit (IC) element through Vcom line IC terminals; if the number of the data lines is N, the number of the Vcom line IC terminals is more than 0 and less than N+1; and at least one Vcom line longitudinal electric connection section is provided between the Vcom lines in two adjacent rows. | 2012-06-28 |
20120161141 | White Organic Light Emitting Diode Display Device and Method of Fabricating the Same - According to the present invention, there is provided a white organic light emitting diode (W-OLED) display device for effectively blocking outgas generated from a color filter using silicon nitride having a low water vapor transmission rate as a passivation layer instead of a planarization layer which is an organic insulating layer, and a method of fabricating the same. | 2012-06-28 |
20120161142 | ARRAY SUBSTRATE OF TFT-LCD AND MANUFACTURING METHOD THEREOF - An array substrate of a TFT-LCD, comprising: a base substrate; gate lines and data lines formed on the substrate, the gate lines and the data lines crossing with each other to define a plurality of pixel units each of which comprises a thin film transistor, a first electrode layer and a second electrode layer, wherein the first electrode layer is separated from the second electrode layer through an insulation layer; the first electrode layer comprises a plurality of first electrodes separated by openings; the second electrode layer comprises a plurality of second electrodes separated by openings; the second electrodes comprise overlapping electrodes each of which completely overlaps with the first electrodes and non-overlapping electrodes whose edges are completely located within an region corresponding to the openings in the first electrode layer. | 2012-06-28 |
20120161143 | CRYSTAL SILICON FILM FORMING METHOD, THIN-FILM TRANSISTOR AND DISPLAY DEVICE USING THE CRYSTAL SILICON FILM - A crystal silicon film forming method according to the present invention includes: forming a metal film; forming an insulating film on the metal film, and forming a crystal silicon film made of polycrystal Si on the insulating film. In the forming of an insulating film, the insulating film is formed within a film thickness range of 160 nm to 190 nm. The forming of a crystal silicon film includes forming an amorphous silicon film made of a-Si on the insulating film, within a film thickness range of 30 nm to 45 nm, and forming the crystal silicon film from the amorphous silicon film by irradiating the amorphous silicon film with a light of a green laser. | 2012-06-28 |
20120161144 | POLYSILICON THIN FILM TRANSISTOR HAVING TRENCH TYPE COPPER BOTTOM GATE STRUCTURE AND METHOD OF MAKING THE SAME - Provided is a polysilicon thin film transistor having a trench type bottom gate structure using copper and a method of making the same. The polysilicon thin film transistor includes: a transparent insulation substrate; a seed pattern that is formed in a pattern corresponding to that of a gate electrode on the transparent insulation substrate, and that is used to form the gate electrode; a trench type guide portion having a trench type contact window in which an upper portion of the seed pattern is exposed; the gate electrode that is formed by electrodepositing copper on a trench of the exposed seed pattern; a gate insulation film formed on the upper portions of the gate electrode and the trench type guide portion, respectively; and a polysilicon layer in which a channel region, a source region and a drain region are formed on the upper portion of the gate insulation film. | 2012-06-28 |
20120161145 | SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE - An object is at least one of a longer data retention period of a memory circuit, a reduction in power consumption, a smaller circuit area, and an increase in the number of times written data can be read to one data writing operation. The memory circuit has a first field-effect transistor, a second field-effect transistor, and a rectifier element including a pair of current terminals. A data signal is input to one of a source and a drain of the first field-effect transistor. A gate of the second field-effect transistor is electrically connected to the other of the source and the drain of the first field-effect transistor. One of the pair of current terminals of the rectifier element is electrically connected to a source or a drain of the second field-effect transistor. | 2012-06-28 |
20120161146 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - The present invention includes a semiconductor substrate, a gate electrode which is provided on the semiconductor substrate, a source electrode and a drain elect rode which are provided on the semiconductor substrate to sandwich the gate electrode, and a recess provided below edges of the gate electrode at least on a drain electrode side. | 2012-06-28 |
20120161147 | HIGH TEMPERATURE STRAIN SENSOR - An example sensor that includes a first Schottky diode, a second Schottky diode and an integrated circuit. The sensor further includes a voltage generator that generates a first voltage across the first Schottky diode and a second voltage across the second Schottky diode. When the first Schottky diode and the second Schottky diode are subjected to different strain, the integrated circuit measures the values of the currents flowing through the first Schottky diode and the second Schottky diode to determine the strain on an element where the first Schottky diode and the second Schottky diode are attached. | 2012-06-28 |
20120161148 | NITRIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME - A nitride semiconductor substrate and a method for manufacturing the same are provided. The nitride semiconductor substrate includes a base material, a patterned nitride semiconductor, a protection layer, and a nitride semiconductor layer. The patterned nitride semiconductor layer is located on the base material and includes a plurality of nanorod structures and a plurality of block patterns, and an upper surface of the nanorod structures is substantially coplanar with an upper surface of the block patterns. The protection layer covers a side wall of the nanorod structure sand a side wall of the block patterns. The nitride semiconductor layer is located on the patterned nitride semiconductor layer, and a plurality of nanopores are located between the nitride semiconductor layer and the patterned nitride semiconductor layer. | 2012-06-28 |
20120161149 | INTERMEDIATE EPITAXIAL STRUCTURE AND METHOD FOR FABRICATING AN EPITAXIAL STRUCTURE - A method for fabricating an epitaxial structure includes: (a) forming over a temporary substrate a patterned sacrificial layer that partially exposes the temporary substrate; (b) growing laterally and epitaxially a temporary epitaxial film over the patterned sacrificial layer and the temporary substrate; (c) forming over the temporary epitaxial film an etching-stop layer; (d) forming an epitaxial layer unit over the etching-stop layer; (e) removing the patterned sacrificial layer using a first etchant; and (f) removing the temporary epitaxial film using a second etchant. | 2012-06-28 |
20120161150 | METHOD FOR DETERMINING THE STRUCTURE OF A TRANSISTOR - A method for determining the structure of a transistor having at least one first layer including GaN, one second layer including Al | 2012-06-28 |
20120161151 | SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS OF MANUFACTURING - Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state light device includes a light emitting diode with an N-type gallium nitride (GaN) material, a P-type GaN material spaced apart from the N-type GaN material, and an indium gallium nitride (InGaN) material directly between the N-type GaN material and the P-type GaN material. At least one of the N-type GaN, InGaN, and P-type GaN materials has a non-planar surface. | 2012-06-28 |
20120161152 | EPITAXIAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SUBSTRATE - Provided is a crack-free epitaxial substrate having a small amount of warping, in which a silicon substrate is used as a base substrate. The epitaxial substrate includes a (111) single crystal Si substrate, a buffer layer, and a crystal layer. The buffer layer is formed of a first lamination unit and a second lamination unit being alternately laminated. The first lamination unit includes a composition modulation layer and a first intermediate layer. The composition modulation layer is formed of a first unit layer and a second unit layer having different compositions being alternately and repeatedly laminated so that a compressive strain exists therein. The first intermediate layer enhances the compressive strain existing in the composition modulation layer. The second lamination unit is a second intermediate layer that is substantially strain-free. | 2012-06-28 |
20120161153 | SEMICONDUCTOR DEVICE - A semiconductor device of one embodiment, including the semiconductor layer including a III-V group nitride semiconductor; a groove portion formed in the semiconductor layer; the gate insulating film formed at least on a bottom surface of the groove portion, the gate insulating film being a stacked film of a first insulating film and a second insulating film of which dielectric constant is higher than that of the first insulating film; the gate electrode formed on the gate insulating film; and a source electrode and a drain electrode formed on the semiconductor layer across the gate electrode, in which the second insulating film is selectively formed only under the gate electrode. | 2012-06-28 |
20120161154 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME - An SiC semiconductor device includes a substrate, a drift layer, a base region, a source region, a trench, a gate oxide film, a gate electrode, a source electrode and a drain electrode. The substrate has a Si-face as a main surface. The source region has the Si-face. The trench is provided from a surface of the source region to a portion deeper than the base region and extends longitudinally in one direction and has a Si-face bottom. The trench has an inverse tapered shape, which has a smaller width at an entrance portion than at a bottom, at least at a portion that is in contact with the base region. | 2012-06-28 |
20120161155 | SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING SILICON CARBIDE SUBSTRATE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE - A main surface of a silicon carbide substrate is inclined by an off angle in an off direction from {0001} plane of a hexagonal crystal. The main surface has such a characteristic that, among emitting regions emitting photoluminescent light having a wavelength exceeding 650 nm of the main surface caused by excitation light having higher energy than band-gap of the hexagonal silicon carbide, the number of those having a dimension of at most 15 μm in a direction perpendicular to the off direction and a dimension in a direction parallel to the off direction not larger than a value obtained by dividing penetration length of the excitation light in the hexagonal silicon carbide by a tangent of the off angle is at most 1×10 | 2012-06-28 |
20120161156 | TRIBOLOGY COMBINED WITH CORROSION RESISTANCE: A NEW FAMILY OF PVD- AND PACVD COATINGS - The present invention relates to a coating system on a substrate with improved protection against wear as well as corrosion. According to the invention the substrate is coated with a diamond like carbon (DLC) layer. This DLC layer is coated with an additional layer with material different from the DLC coating material, thereby closing the pin holes of the DLC layer. | 2012-06-28 |
20120161157 | SILICON CARBIDE SUBSTRATE - A silicon carbide substrate, which achieves restrained warpage even when a different-type material layer made of a material other than silicon carbide, includes: a base layer made of silicon carbide; and a plurality of SiC layers arranged side by side on the base layer when viewed in a planar view and each made of single-crystal silicon carbide. A gap is formed between end surfaces of adjacent SiC layers. | 2012-06-28 |
20120161158 | COMBINED SUBSTRATE HAVING SILICON CARBIDE SUBSTRATE - A first silicon carbide substrate has a first backside surface connected to a supporting portion, a first front-side surface opposite to the first backside surface, and a first side surface connecting the first backside surface and the first front-side surface to each other. A second silicon carbide substrate has a second backside surface connected to the supporting portion, a second front-side surface opposite to the second backside surface, and a second side surface connecting the second backside surface and the second front-side surface to each other and forming a gap between the first side surface and the second side surface. A closing portion closes the gap. Thereby, foreign matters can be prevented from remaining in a gap between a plurality of silicon carbide substrates provided in a combined substrate. | 2012-06-28 |
20120161159 | Method of manufacturing silicon optoelectronic device,silicon optoelectronic device manufactured by the method, and image input and/or output apparatus using the silicon optoelectronic device - A method of manufacturing a silicon optoelectronic device, a silicon optoelectronic device manufactured by the method, and an image input and/or output apparatus including the silicon optoelectronic device are provided. The method includes preparing an n- or p-type silicon-based substrate, forming a microdefect pattern along a surface of the substrate by etching, forming a control film with an opening on the microdefect pattern, and forming a doping region on the surface of the substrate having the microdefect pattern in such a way that a predetermined dopant of the opposite type to the substrate is injected onto the substrate through the opening of the control film to be doped to a depth so that a photoelectric conversion effect leading to light emission and/or reception by quantum confinement effect in the p-n junction occurs. The silicon optoelectronic device has superior light-emitting efficiency, can be used as at least one of a light-emitting device and a light-receiving device, and has high wavelength selectivity. In addition, the silicon optoelectronic device panel having the two-dimensional array of the silicon optoelectronic devices can be applied in the image input and/or output apparatus capable of directly displaying an image and/or inputting optical information in a screen. | 2012-06-28 |
20120161160 | Self Light-Emitting Device - To provide a method of improving an efficiency for extracting light in a self light-emitting device using an organic EL material. In the self light-emitting device having a structure in which an EL layer ( | 2012-06-28 |
20120161161 | ARRAY ASSEMBLIES WITH HIGH VOLTAGE SOLID STATE LIGHTING DIES - Various embodiments of solid state lighting (“SSL”) assemblies with high voltage SSL dies and methods of manufacturing are described herein. In one embodiment, an array assembly of SSL dies includes a first terminal and a second terminal configured to receive an input voltage (Vo). The array assembly also includes a plurality of SSL dies coupled between the first terminal and the second terminal, at least some of which are high voltage SSL dies coupled in parallel. | 2012-06-28 |
20120161162 | Optoelectronic Semiconductor Component - An optoelectronic semiconductor device is specified, comprising a multiplicity of radiation-emitting semiconductor chips ( | 2012-06-28 |
20120161163 | LIGHT-EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - A light-emitting device package uses a metal layer as a reflective region and includes a light-emitting device chip and an electrode pad that are disposed on an insulating layer. In addition, the electrode pad and an electrode pattern of a printed circuit board are connected to each other by an electrode pattern formed of conductive ink. A method of manufacturing a light-emitting device package includes forming an insulating layer on a metal layer, and bonding a light-emitting device chip and an electrode pad on the insulating layer. The electrode pad and a printed circuit board are connected to each other by conductive ink. | 2012-06-28 |
20120161164 | LIGHT-EMITTING DEVICE PACKAGE AND METHOD OF MANUFACTURING THE SAME - Provided are a light-emitting device package and a method of manufacturing the same. The light-emitting device package may include a plurality of light-emitting chips on one substrate (board). The plurality of light-emitting chips may produce colors around a target color. The target color may be produced by combinations of the colors of light emitted from the plurality of light-emitting chips. The colors around the target color may have the same hue as the target color and have color temperatures different from that of the target color. The plurality of light-emitting chips may have color temperatures within about ±250K of that of the target color. | 2012-06-28 |
20120161165 | LIGHTING DEVICE - For integration of light-emitting elements and for suppression of a voltage drop, plural stages of light-emitting element units each including a plurality of light-emitting elements which is connected in parallel are connected in series. Further, besides a lead wiring with a large thickness, a plurality of auxiliary wirings with different widths and different thicknesses is used, and the arrangement of the wirings, electrodes of the light-emitting elements, and the like is optimized. | 2012-06-28 |
20120161166 | LIGHTING DEVICE - For integration of light-emitting elements and for suppression of a voltage drop, plural stages of light-emitting element units provided over a substrate having an insulating surface and each including a plurality of light-emitting elements which is connected in parallel are connected in series. Further, besides a lead wiring with a large thickness, a plurality of auxiliary wirings with different widths and different thicknesses is used, and the arrangement of the wirings, electrodes of the light-emitting elements, and the like is optimized. Note that in the lighting device, light emitted from the light-emitting element passes through the substrate having an insulating surface and then is extracted. | 2012-06-28 |
20120161167 | Light-Emitting Unit, Light-Emitting Device, Lighting Device, and Method for Manufacturing Light-Emitting Unit - A light-emitting unit with small energy loss is provided. Further, a light-emitting unit with high reliability is provided. A light-emitting unit is provided in the following manner: a separation layer including a leg portion and a stage portion, which protrudes over an electrode is formed so that a projected area of the stage portion is larger than that of the leg portion; a layer containing a light-emitting organic compound, an upper electrode of the first light-emitting element, and an upper electrode of the second light-emitting element are formed; and the upper electrode of the first light-emitting element is electrically connected to a lower electrode of the second light-emitting element in a region overlapping with the stage portion of the separation layer. | 2012-06-28 |
20120161168 | LIGHT EMITTING DEVICE - A light emitting device includes: a chip-mounting base formed with a plurality of conductive contacts; a reflector mounted on the chip-mounting base and defining a central hole; a first light emitting chip mounted on the chip-mounting base within the central hole and in electrical contact with respective ones of the conductive contacts for generating light with a first primary wavelength; a second light emitting chip stacked on and in electrical contact with the first light emitting chip for generating light with a second primary wavelength different from the first primary wavelength; and an encapsulant filling the central hole and capable of converting the first and second primary wavelengths into first and second secondary wavelengths, respectively. | 2012-06-28 |
20120161169 | LIGHT-EMITTING DIODE DIE PACKAGE AND METHOD FOR PRODUCING SAME - The present invention relates to a light-emitting diode die package having an LED die and an accommodating housing. The LED die has a first doped layer doped with a p- or n-type dopant and a second doped layer doped with a different dopant from that doped in the first doped layer. Each of the first and second doped layers has an electrode-forming surface formed with an electrode, on which an insulation layer is formed. The insulation layer is formed with exposure holes for exposing the electrodes corresponding thereto. Each of the exposure holes is formed inside with an electrically conductive linker. The accommodating housing has an open end through which an accommodating space is accessible. The LED die is positioned within the accommodating space in such a manner that the electrically conductive linker protrudes outwardly from the accommodating space. | 2012-06-28 |
20120161170 | GENERATION OF RADIATION CONDUCIVE TO PLANT GROWTH USING A COMBINATION OF LEDS AND PHOSPHORS - In accordance with one aspect of the present disclosure, a light emitting device for producing radiation optimal for plant growth is provided. The light emitting device comprises at least one LED chip having a peak wavelength disposed on a support, a phosphor material radiationally coupled to the at least one LED chip. The phosphor materials are capable of absorbing at least a portion of the radiation from the at least one LED chip and emitting light of a second wavelength. The light emitting device further includes an optical element at least partially covering the at least one LED chip and support. The light emitting device is capable of uniformly mixing the red and blue radiation to produce pink radiation. | 2012-06-28 |
20120161171 | PIXEL STRUCTURE - A pixel structure including a pair of first sub-pixels, a pair of second sub-pixels and an electrical tunable photonic crystal layer is provided. The pair of first sub-pixels are substantially identical in area, and the pair of second sub-pixels are substantially identical in area. The area of each second sub-pixel is twice the area of each first sub-pixel. In addition, the electrical tunable photonic crystal layer is disposed over the pair of first sub-pixels and the pair of second sub-pixels. | 2012-06-28 |
20120161172 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device capable of suppressing a reduction in color purity includes: a first resonator structure having an upper reflective member, a lower reflective member, and a light-emitting functional layer therebetween, the light-emitting functional layer including a red light-emitting layer which emits red light; a second resonator structure having an upper reflective member, a lower reflective member, and a light-emitting functional layer provided therebetween, the light-emitting functional layer including a blue light-emitting layer which emits blue light; and a third resonator structure having an part reflective member, a lower reflective member, and a light-emitting functional layer provided therebetween, the light-emitting functional layer including a green light-emitting layer which emits green light, wherein the red light-emitting layer is a common layer provided in each of the light-emitting functional layers of the first to third resonator structures. | 2012-06-28 |
20120161173 | LIGHT EMITTING DEVICE - A light emitting device includes: a chip-mounting base formed with a plurality of conductive contacts; a reflector mounted on the chip-mounting base and defining a central hole; a first light emitting chip mounted on the chip-mounting base within the central hole and in electrical contact with respective ones of the conductive contacts for generating light with a first primary wavelength; a second light emitting chip stacked on and in electrical contact with the first light emitting chip for generating light with a second primary wavelength different from the first primary wavelength; and an encapsulant filling the central hole and capable of converting the first and second primary wavelengths into first and second secondary wavelengths, respectively. | 2012-06-28 |
20120161174 | LIGHT-EMITTING UNIT, LIGHT-EMITTING DEVICE, AND LIGHTING DEVICE - The light-emitting unit includes a first light-emitting element and a second light-emitting element over an insulating surface. The first light-emitting element includes a first electrode, a second electrode, and a layer containing a light-emitting organic compound interposed between the first and second electrodes. An edge portion of the first electrode is covered with a first insulating partition wall. The second light-emitting element includes a third electrode, a fourth electrode, a light-emitting organic compound interposed between the third and fourth electrodes. The first and third electrodes are formed from the same layer having a property of transmitting light emitted from the light-emitting organic compound. The second and fourth electrodes are formed from the same layer. The second electrode intersects with the edge portion of the first electrode with the first partition wall interposed therebetween, whereby the second electrode and the third electrode are electrically connected to each other. | 2012-06-28 |
20120161175 | VERTICAL STRUCTURE LIGHT EMITTING DIODE AND METHOD OF MANUFACTURING THE SAME - A vertical structure light emitting diode (LED) and a method of manufacturing the same are disclosed. The vertical structure LED includes a metal layer as an electrode; a number of luminescent layers formed on the metal layer for providing light beams; a spreading layer formed on the luminescent layers; a medium layer provided on the spreading layer, having an opening formed therethrough to expose the spreading layer and a roughed surface. The spreading layer facilitates diffusion of current produced by the electrode. | 2012-06-28 |
20120161176 | LIGHT EMITTING DIODE CHIP AND METHOD OF FABRICATING THE SAME - Exemplary embodiments of the present invention provide light emitting diode (LED) chips and a method of fabricating the same. An LED chip according to an exemplary embodiment includes a substrate; a light emitting structure arranged on the substrate, and an alternating lamination bottom structure arranged under the substrate. The alternating lamination bottom structure includes a plurality of dielectric pairs, each of the dielectric pairs including a first material layer having a first refractive index and a second material layer having a second refractive index, the first refractive index being greater than the second refractive index. | 2012-06-28 |
20120161177 | METHOD OF BONDING METAL AND GLASS USING OPTICAL CONTACT BONDING, METHOD OF MANUFACTURING DISPLAY APPARATUS USING THE METHOD OF BONDING, AND DISPLAY APPARATUS MANUFACTURED BY THE METHOD OF BONDING - A method of bonding metal and glass using an optical contact bonding includes depositing an optical contact bonding medium on a surface of a metal substrate; and bonding the metal substrate on which the optical contact bonding medium is formed to a glass substrate using optical contact bonding. | 2012-06-28 |
20120161178 | LED PACKAGE AND CHIP CARRIER THEREOF - An LED package includes a chip carrier, an LED chip, and an encapsulation. The chip carrier includes a first surface, a second surface opposite to the first surface, and a side surface interconnecting the first surface and the second surface. The chip carrier includes an insulator defining two holes, and two electrodes. Each electrode includes a first contact end exposed on the first surface and separated from the side surface by the insulator, a second contact end exposed on the second surface, and a connecting portion connecting the first contact end to the second contact end; the connecting portion has a bent part received in the hole. The LED chip is mounted on the first surface of the chip carrier. The encapsulation covers the LED chip. | 2012-06-28 |
20120161179 | LIGHT EMITTING DIODE PACKAGE - An LED package includes a base, an LED die arranged on the base, an encapsulation sealing the LED die, and a light wavelength converting layer arranged on a light path of the LED die. The light wavelength converting layer includes a plurality of first areas comprising red fluorescent powder, a plurality of second areas comprising green fluorescent powder and a plurality of third areas comprising blue fluorescent powder. The first, second and third areas are aligned along a first direction and a second direction perpendicular to the first direction. Each two neighboring areas on the first direction have different colors. Each two neighboring areas on the second direction also have different colors. | 2012-06-28 |
20120161180 | LED PACKAGE - According to one embodiment, an LED package includes a first lead frame and a second lead frame, an LED chip and a resin body. The resin body covers the LED chip and the top face, a part of the bottom face and a part of the end face, of each of the first and the second lead frames, and exposes the remaining part of the bottom face and the remaining part of the end face. The resin body includes a first part and a second part. The first part is disposed between the top face of the LED chip and a region immediately above the LED chip of the top face of the resin body and transmits light emitted by the LED chip. The second part surrounds the first part and has a transmittance of the light lower than a transmittance in the first part. | 2012-06-28 |