25th week of 2012 patent applcation highlights part 52 |
Patent application number | Title | Published |
20120156755 | POLYPEPTIDES HAVING CELLOBIOHYDROLASE ACTIVITY AND POLYNUCLEOTIDES ENCODING SAME - The present invention relates to isolated polypeptides having cellobiohydrolase activity and isolated polynucleotides encoding the polypeptides. The invention also relates to nucleic acid constructs, vectors, and host cells comprising the polynucleotides as well as methods of producing and using the polypeptides. | 2012-06-21 |
20120156756 | PROCESS AND SYSTEM FOR OBTAINING BOTULINUM NEUROTOXIN - Rapid, animal protein free, chromatographic processes and systems for obtaining high potency, high yield botulinum neurotoxin for research, therapeutic and cosmetic use. | 2012-06-21 |
20120156757 | PURIFICATION OF IMMUNOGENS USING A NON-POLYSACCHARIDE MATRIX - The present invention relates, at least in part, to novel and improved chromatography matrices for separating or purifying immunogens, such as, for example, viruses and viral surface proteins, from one or more contaminants in a sample, where the matrix comprises a porous non-polysaccharide solid support comprising a negatively charged, multivalent ion exchange group directly attached to the solid support. | 2012-06-21 |
20120156758 | Recombinant Influenza Viruses for Vaccines and Gene Therapy - The invention provides compositions and methods useful to prepare segmented, negative strand RNA viruses, e.g., orthomyxoviruses such as influenza A viruses, entirely from cloned cDNAs and in the absence of helper virus. | 2012-06-21 |
20120156759 | METHOD AND PRODUCT FOR DECOMPOSING ORGANIC COMPOUNDS - A method for the biological decomposition of organic compounds of the group of hydrocarbons, fats, oils, waxes, and derivatives thereof as well as mixtures thereof in media polluted therewith, in the presence of at least one dispersant, wherein the medium polluted with the pollutants is treated with at least one dispersant and with microorganisms. | 2012-06-21 |
20120156760 | METHOD FOR PRODUCING LACTIC ACID BACTERIA HAVING ENHANCED IMMUNOREGULATING ACTIVITIES - The present invention provides a method for producing lactic acid bacteria having enhanced immunostimulating activities. Cultivation at a temperature that is higher than the recommended cultivation temperature of the lactic acid bacteria to be used increases the cell wall amount and the cell wall thickness. The immunoregulating activities of the lactic acid bacteria improve in correlation with such increase. The method of the present invention enhances the immunoregulating functions of lactic acid bacteria without requiring any special medium or any special process. This enhancement allows lactic acid bacteria exhibiting excellent immunoregulating activities in a human, or products including such bacteria, such as foods or drinks, medicines or cosmetics to be provided. | 2012-06-21 |
20120156761 | BIOLOGICAL METHODS FOR PREPARING ADIPIC ACID - The technology relates in part to biological methods for producing adipic acid and engineered microorganisms capable of such production. | 2012-06-21 |
20120156762 | SOLAR HYBRID PHOTOBIOREACTOR - A photobioreactor system is provided that comprises a bioreactor including at least two bioreactor tubes, each having an end and a hollow interior, the ends being connectively joined by one or more connector units having a hollow portion defined by a circumference, a solar concentrator configured to collect and concentrate solar power, at least one light guide associated with the solar concentrator to illuminate the hollow portion of the one or more connector units, and at least one LED illuminating the one or more connector units. | 2012-06-21 |
20120156763 | Apparatus and Methods for Using Biological Material to Discriminate an Agent - An apparatus and methods for using biological material to discriminate an agent. In one embodiment of the present invention, the method includes the steps of providing at least one cell, exposing at least one cell to an agent, measuring the response of the cell to the agent in terms of a physical quantity related to at least one of the cellular physiological activities of the cell, and identifying the agent from the measured response. The method further includes the step of quantifying the agent from the measured response. | 2012-06-21 |
20120156764 | Automated Analyzer - The automatic analyzer repeatedly performs a first processing operation for creating a pretreated specimen with a pretreatment solution in a first reaction cell. The analyzer also repeatedly performs a second processing operation for creating a reacted specimen by reacting the pretreated specimen with a reagent in a second reaction cell. In a first control operation, a turntable is rotated through a first angle in a first direction and halted. In a second control operation, the turntable is rotated through a second angle in a second direction and halted. The second reaction cell is spaced by a second angle in a first direction from the first reaction cell. The turntable is so rotated that the first and second reaction cells are halted at least in first, second, and third positions. | 2012-06-21 |
20120156765 | FLUID FILTERING DEVICE - The invention relates to a fluid filtering device comprising a filter ( | 2012-06-21 |
20120156766 | SAMPLE ANALYZING CHIP AND MEASUREMENT SYSTEM USING SAME - Temperature of a sensor chip itself rises with the supply of power owing to temperature dependence of the sensor chip as its basic characteristics. When a chemiluminescence reagent is added at the point of time at which the temperature rise reaches a steady state and a sensor chip photodiode dark current becomes constant, a drastic shift occurs in the sensor chip temperature. Remarkable dispersion occurs at this time in the sensor chip photodiode dark current Variance (unstability) of the sensor chip photodiode dark current can be decreased by reducing the temperature fluctuation of the sensor chip to minimum by using an exothermal effect of a thermal diffusion medium. | 2012-06-21 |
20120156767 | PCR DEVICE - PCR device ( | 2012-06-21 |
20120156768 | PRESSURE AND CIRCULATION CULTURE APPARATUS AND PRESSURE AND CIRCULATION CULTURE SYSTEM - The pressure and circulation culture apparatus includes a holder (culture chamber part), a pressure transmission part and a culture solution circulation line (culture circuit). The holder is a means that reserves culture solution and that holds a cultured object. The pressure transmission part is a means that communicates with the holder and transmits an external pressure to the culture solution. The culture solution circulation line is a means that is connected to the holder via the pressure transmission part, and circulates the culture solution through the holder via the pressure transmission part. Such a structure is included, and an external pressure is made to operate on the culture solution via the pressure transmission part to allow pressure on the cultured object in the holder and circulation of the culture solution in the holder. | 2012-06-21 |
20120156769 | Cells Useful for Immuno-Based Botulinum Toxin Serotype A Activity Assays - The present specification discloses clonal cell lines susceptible to BoNT/A intoxication, methods of producing such clonal cell lines, and methods of detecting Botulinum toxin serotype A activity using such clonal cell lines. | 2012-06-21 |
20120156770 | HUMAN ANDROGEN RECEPTOR ALTERNATIVE SPLICE VARIANTS - The present invention relates to novel androgen receptor splice variants (AR3, AR4, AR4b, AR5 and AR8) and variants and fragments thereof which have a role in the progression of androgen independent prostate cancer. The invention further relates to compositions and methods which can be used to identify and treat prostate cancer based on these novel androgen receptor splice variants, as well as methods for screening agents which modulate the activity and/or expression of the androgen receptor splice variants. Vectors, host cells and recombinant methods for producing the same and transgenic animals are also provided. | 2012-06-21 |
20120156771 | FUNCTIONAL DISRUPTION OF AN IMMUNOGLOBULIN GENE IN AN AVIAN EMBRYONIC STEM CELL - A transgenic chicken is disclosed having disrupted endogenous immunoglobulin production. In one embodiment, a targeting construct is stably integrated into the genome of the chicken by homologous recombination in embryonic stem cells, and injection of the engineered embryonic stem cells into recipient embryos, thereby knocking out the endogenous immunoglobulin gene locus in resulting animals. The targeted disruption of the locus in embryonic stem cells is particularly useful in combination with the insertion of genetic elements encoding exogenous immunoglobulin molecules. After these chickens are cross-bred, a line of chickens is produced that has a reduction of endogenous immunoglobulin molecule production. | 2012-06-21 |
20120156772 | CELL CARRIER AND METHODS OF MAKING - In one example of a carrier for growing adherent cells, comprises one or more surfaces; and one or more relief features on one or more of the surfaces, wherein the carrier has a length at least about 0.2 mm, a width at least about 0.2 mm, and a height in a range from about 0.012 mm to 0.5 mm; and wherein each of the relief features has a height in a range from about 2 to 200 μm, and width in a range from about 20 to 200 μm. | 2012-06-21 |
20120156773 | CELL CARRIER, METHODS OF MAKING AND USE - A method of culturing adherent cells is provided, wherein the method comprises providing a carrier for growing the cells, comprising one or more surfaces; and one or more relief features/indentations are present on one or more of the surfaces, wherein the carrier has a length at least about 0.2 mm, a width at least about 0.2 mm, and a height in a range from about 0.012 mm to 0.5 mm; and wherein each of the relief features/indentations has a height above the surfaces in a range from about 2 to 200 μm, and width in a range from about 20 to 200 μm; seeding the cells on the carriers; and growing the cells on the carrier. | 2012-06-21 |
20120156774 | Cells Useful for Immuno-Based Botulinum Toxin Serotype A Activity Assays - The present specification discloses clonal cell lines susceptible to BoNT/A intoxication, methods of producing such clonal cell lines, and methods of detecting Botulinum toxin serotype A activity using such clonal cell lines. | 2012-06-21 |
20120156775 | Cells Useful for Immuno-Based Botulinum Toxin Serotype A Activity Assays - The present specification discloses clonal cell lines susceptible to BoNT/A intoxication, methods of producing such clonal cell lines, and methods of detecting Botulinum toxin serotype A activity using such clonal cell lines. | 2012-06-21 |
20120156776 | Cells Useful for Immuno-Based Botulinum Toxin Serotype A Activity Assays - The present specification discloses clonal cell lines susceptible to BoNT/A intoxication, methods of producing such clonal cell lines, and methods of detecting Botulinum toxin serotype A activity using such clonal cell lines. | 2012-06-21 |
20120156777 | CELL CARRIER, ASSOCIATED METHODS FOR MAKING CELL CARRIER AND CULTURING CELLS USING THE SAME - A carrier for growing adherent cells is provided, wherein the carrier comprises one or more outer surfaces; and one or more structured indentations on one or more of the outer surfaces, wherein the carrier has a length at least about 0.2 mm, a width at least about 0.2 mm, and a height in a range from about 0.05 mm to 1.2 mm and each of the structured indentations has a major axis in a range from about 0.1 mm to 0.5 mm, a minor axis in a range from about 0.1 mm to 0.5 mm and a depth in a range from about 0.025 mm to about 0.5 mm. The carrier may comprise a single indentation or ‘cup’ like structure, or may comprise a plurality of indentations. A method of making the carrier, and culturing stromal cells using the same carrier are also provided. | 2012-06-21 |
20120156778 | METHOD FOR EFFICIENT PRODUCTION OF INDUCED PLURIPOTENT STEM CELLS UTILIZING CELLS DERIVED FROM ORAL MUCOSA - A main object of the present invention is to provide a technique to produce iPS cells with less burden on the patient and with high establishment efficiency. iPS cells can be efficiently produced with significantly improved establishment efficiency by selecting cells derived from oral mucosa and introducing, into the cells, reprogramming factors capable of inducing the cells into pluripotent stem cells. | 2012-06-21 |
20120156779 | METHOD FOR CELL EXPANSION - The present invention relates to a method for cell expansion. In the method, preferably a cell culture product is used, such as a microcarrier, or other adherent cell culture surface, comprising degradable polysaccharide, preferably starch, modified with small molecular weight cell-binding ligands. This allows recovery (detachment) of adhered cells to be aided by degradation of the culture surface with enzymatic agents, such as amylase. The method for cell expansion comprises the following steps: a) adding cells, culture medium and cell culture surface comprising a degradable polysaccharide with guanidine group containing ligands to a bioreactor; b) expanding said cells by adherent cell culture; and c) aiding the detachment of said cells by exposing them to a polysaccharidase to degrade the culturing surface. | 2012-06-21 |
20120156780 | Polymer Substrates Having Improved Biological Response From HKDCS - A method of surface modification of a biocompatible, biodegradable polymer substrate using RF plasma treatment is disclosed. This method and the resulting surface provide for enhanced adhesion and proliferation of cells, such as hKDCs, and can be used with scaffolds for tissue regeneration and with other delivery vehicles such as medical devices. | 2012-06-21 |
20120156781 | TEMPERATURE-RESPONSIVE CELL CULTURE SUBSTRATE ON WHICH A STRAIGHT-CHAIN TEMPERATURE-RESPONSIVE POLYMER IS IMMOBILIZED, AND MANUFACTURING METHOD THEREFOR - Provided is a temperature-responsive cell culture substrate. A non-crosslinked temperature-responsive polymer having a molecular weight between 10,000 and 150,000 is immobilized on the substrate surface with a density of 0.02 to 0.3 molecular chain per square nanometer. Using the provided temperature-responsive cell culture substrate, cells obtained from various tissues can be efficiently cultured. This culturing method makes it possible to efficiently peel off a cell sheet by just changing the temperature, without causing damage. | 2012-06-21 |
20120156782 | CELL CULTURE MEDIUM - The present disclosure related to isolated laminin-521, methods for making recombinant laminin-521, host cells that express recombinant laminin-521, and compositions containing laminin-521. Laminin-521 can maintain stem cells in vitro pluripotency, enable self-renewal, and enable single cell survival of human embryonic stem cells. When pluripotent human embryonic stem cells are cultured on plates coated with recombinant laminin-521 (laminin-11), in the absence of differentiation inhibitors or feeder cells, the embryonic stem cells proliferate and maintain their pluripotency. It has also been discovered that human recombinant laminin-521 (laminin-11) provides single cell survival of stem cells after complete dissociation into a single cell suspension. Useful cell culture mediums containing at most 3.9 ng/ml of beta fibroblast growth factor (bFGF) are also described herein. | 2012-06-21 |
20120156783 | AUTOMATED LIQUID MANUFACTURING SYSTEM - A method for continuously preparing a medium formulation mixes a diluent with a plurality of chemically incompatible concentrate solutions in such a manner that none of the ingredients of the concentrate solutions chemically react in an adverse manner. The method utilizes a static mixing chamber to add the concentrate solutions to the diluent stream sufficiently in advance of one another so that adverse chemical reactions do not occur. The method also adjusts a pH level of the diluent prior to adding any of the concentrate solutions to the diluent. | 2012-06-21 |
20120156784 | Methods for Improving Competency of Plant Cells - The present invention provides methods for improving competency of plant cells for bacterial-mediated transformation comprising contacting the plant cells with an effective amount of polyethylene glycol (PEG) for a period of time prior to transformation. The ability to store and maintain competent plant cells for transformation and tissue culture allows more efficient planning and execution of large-scale experiments by providing flexibility of peak production hours, or during unplanned disruptions in the production process. These methods are useful in preserving the viability of plant cells in various storage conditions, thus improving their competency for transformation and tissue culture. | 2012-06-21 |
20120156785 | METHODS AND PRODUCTS FOR BIASING CELLULAR DEVELOPMENT - Methods are described that bias cells, such as potent and multipotent stem cells, by transfection with a nucleic acid sequence, to differentiate to a desired end-stage cell or a cell having characteristics of a desired end-stage cell. In particular embodiments, human neural stem cells are transfected with vectors comprising genes in the homeobox family of transcription factor developmental control genes, and this results in a greater percentage of resultant transformed cells, or their progeny, differentiating into a desired end-stage cell or a cell having characteristics of a desired end-stage cell. | 2012-06-21 |
20120156786 | READY-TO-USE ELECTROPORATION CUVETTE INCLUDING FROZEN ELECTROCOMPETENT CELLS - A ready-to-use electroporation cuvette is provided that includes a cuvette, first and second electrodes positioned within the cuvette and electroporation competent cells frozen in a suspension solution within the cuvette, wherein the electroporation cuvette is configured to permit electroporation of the cells when the cells are thawed. The electroporation cuvette may be sealed with a cap that may be color coded to aid the user. | 2012-06-21 |
20120156787 | Laboratory Testing Procedure to Select Acid or Proppant Fracturing Stimulation Treatment for a Given Carbonate Formation - Embodiments of the present invention enables users to determine the efficiency of acid fracturing in stimulating a formation. The testing procedures of embodiments of the present invention examine the elastic, plastic, and creeping effects on closing an acidized fracture during the life span of an oil/gas well. If it is determined that an acidized fracture will be closed for a given stress and temperature, then proppant fracturing should be used; otherwise, acid fracturing is the stimulation treatment to consider. The testing results also provide an estimation of the lifetime of an acid fracture for a given set of in-situ conditions of stress and temperature. If the lifetime is determined to be too short to make the fracturing treatment economically feasible, a different stimulation method should be considered, such as proppant fracturing or matrix acidizing. | 2012-06-21 |
20120156788 | BIOLOGICAL MATERIAL TEST DEVICE AND METHOD OF CONTROLLING THE SAME - A test device to automatically close an opening and closing unit when a predetermined amount of time has elapsed in a state that the opening and closing unit is open, and a method of controlling the same. The test device includes an opening and closing unit which opens and closes the test device; a display unit which displays information regarding the test device; and a controller which closes the opening and closing unit when a predetermined amount of time has elapsed while the opening and closing unit is open, and displays on the display unit a time remaining until the predetermined amount of time has elapsed. | 2012-06-21 |
20120156789 | TITANIUM BEARING MATERIAL FLOW CONTROL IN THE MANUFACTURE OF TITIANIUM TETRACHLORIDE USING A COMBINATION OF FEEDBACK AND FEED FORWARD RESPONSES - This disclosure relates to process for controlling chlorination reactions in manufacturing titanium tetrachloride in a fluidized bed reactor, optionally followed by processing to form a titanium product comprising a minor amount of silica, the process comprising: (a) feeding carbonaceous material, titanium bearing material comprising an amount of silica, and chlorine to the fluidized bed reactor to form a gaseous stream, and condensing the gaseous stream to form titanium tetra-chloride, a non-condensed gas stream and a condensable product stream, wherein at least one of the titanium tetrachloride and the non-condensed gas stream comprise silicon tetrachloride; (b) analyzing the non-condensed gas stream, the titanium tetrachloride or both, to determine the analyzed concentration of silicon tetrachloride; (c) identifying a set point concentration of silicon tetrachloride based on the desired amount of silica in the titanium product; (d) calculating the difference between the analyzed concentration of silicon tetra-chloride and the set point concentration of silicon tetrachloride; (e) measuring the titanium tetrachloride flow to a processing reactor that releases chlorine; (f) measuring the flow of fresh chlorine added to the fluidized bed; (g) measuring the flow of the titanium bearing material added to the fluidized bed reactor and establishing a historic average flow of the titanium bearing material added to the fluidized bed reactor; (h) calculating the chlorine released from the titanium tetrachloride that is processed using the titanium tetrachloride flow data from step (e); (i) calculating the total chlorine flow to the fluidized bed reactor by adding the chlorine flow in step (f) to the chlorine flow calculated in step (h) and establishing a historic average chlorine flow; (j) calculating a unit titanium bearing material consumption per unit chlorine; (k) calculating an estimated current consumption rate of titanium bearing material based on the total chlorine flow from step (i) times the unit titanium bearing material consumption per unit chlorine from step (j); and (l) generating a signal based on difference generated in step (d) that provides a feedback response and combining this to the estimated current consumption rate of titanium bearing material from step (k) to provide a feed forward response to control the flow of the titanium bearing material into the fluidized bed reactor. | 2012-06-21 |
20120156790 | TITANIUM BEARING MATERIAL FLOW CONTROL IN THE MANUFACTURE OF TITANIUM TETRACHLORIDE WITH SILICA CONTENT MONITORING OF THE TITANIUM PRODUCT - This disclosure relates to a process for controlling chlorination reactions in manufacturing titanium tetrachloride in a fluidized bed reactor, followed by processing to form a titanium product comprising an amount of silica, the process comprising: (a) feeding carbonaceous material, titanium bearing material comprising an amount of silica, and chlorine to the fluidized bed reactor to form a gaseous stream, and condensing the gaseous stream to form titanium tetrachloride, a non-condensed gas stream and a condensable product stream; (b) processing the titanium tetrachloride to form a titanium product comprising an amount of silica; (c) analyzing the titanium product comprising an amount of silica to determine the analyzed concentration of silica; (d) identifying a set point concentration of silica; (e) calculating the difference between the analyzed concentration of silica and the set point concentration of silica; and (f) generating a signal which corresponds to the difference calculated in step (e) which provides a feedback response that controls the flow of the titanium bearing material into the fluidized bed reactor. | 2012-06-21 |
20120156791 | METHODS AND SYSTEMS FOR USING ACTUATED SURFACE-ATTACHED POSTS FOR ASSESSING BIOFLUID RHEOLOGY - Methods, systems, and computer readable media for using actuated surface-attached posts for assessing biofluid rheology are disclosed. According to one aspect, a method for testing properties of a biofluid specimen includes placing the specimen onto a micropost array having a plurality of microposts extending outwards from a substrate, wherein each micropost includes a proximal end attached to the substrate and a distal end opposite the proximal end, and generating an actuation force in proximity to the micropost array to actuate the microposts, thereby compelling at least some of the microposts to exhibit motion. The method further includes measuring the motion of at least one of the microposts in response to the actuation force and determining a property of the specimen based on the measured motion of the at least one micropost. | 2012-06-21 |
20120156792 | REAGENTS FOR ELECTRON TRANSFER DISSOCIATION IN MASS SPECTROMETRY ANALYSIS - The invention provides improvements in reagents for use in electron transfer dissociation ionization techniques for use in mass spectrometry, particularly for sequencing peptides and proteins using mass spectrometric techniques involving electro-spray ionization and MS/MS characterization of fragment ions. The novel reagents used in the inventive methods allow for more effective determination of protein sequences, especially of long peptides or post-translationally modified protein fragments. Use of the polycyclic aromatic hydrocarbons azulene, homoazulene, and acenaphthylene, and homodimers and heterodimers thereof, are described. | 2012-06-21 |
20120156793 | FLUOROPHORE AND FLUORESCENT SENSOR COMPOUND CONTAINING SAME - The invention provides fluorophores of formulae (I) and (II) and also fluorescent sensor compounds comprising fluorophore moieties based on such fluorophores in combination with a receptor moiety. There is further provided a method of sensing the presence of a target analyte using the fluorescent sensor compound, as well as the use of the fluorescent sensor compounds to sense a target analyte. | 2012-06-21 |
20120156794 | METHOD FOR THE EXTRACTION AND DETECTION OF FAT-SOLUBLE COMPONENTS FROM BIOLOGICAL MATERIALS - The invention relates to a method for analysis of fat-soluble components, in particular fat-soluble dyes, from biological materials, in particular foods and feeds, having facilitated extraction of the fat-soluble components from the biological materials with use of suitable dilution solutions and of the extractability using pertinent organic solvents or organic solvent mixtures and also an enrichment and separation method, with subsequent digital evaluation and documentation. It is proposed to treat the biological materials first with a dilution medium which makes the fat-soluble components more readily extractable from the complex biological matrix and subsequently with at least one organic solvent which extracts the components; the substances extracted into the organic supernatant are subsequently chromatographically enriched and separated and then visually assessed and/or measured. | 2012-06-21 |
20120156795 | NANOMETRIC INK FOR DETECTION OF EXPLOSIVES - A method of manufacturing an explosive testing agent is disclosed. The method includes synthesizing hydrogen bronze nanoparticles and placing the nanoparticles on a test platform. | 2012-06-21 |
20120156796 | CUVETTE FOR PHOTOMETRIC MEASUREMENT OF SMALL LIQUID VOLUMES - A cuvette for photometric measurement of liquids is provided comprising a body having outer walls and an inner space for receiving liquids, the body comprising an upper part comprising an upper open top portion, an upper front wall, an upper back wall, and two upper side walls. The upper walls form four upper inner edges and an upper open bottom portion with a first substantially rectangular cross-section in a plane A-A, a lower measurement chamber comprising a lower closed bottom portion, a lower front wall, a lower back wall, and two lower side walls. The lower walls form four lower inner edges and a lower open top portion with a second substantially rectangular cross-section in a plane B-B smaller than the first substantially rectangular cross-section in the plane A-A, wherein at least the lower front wall and the lower back wall are at least in part substantially planar and substantially parallel to each other. An abrupt transition zone is positioned between the plane A-A and the plane B-B comprising four transition inner edges connecting the four lower inner edges to the upper open bottom portion. At least in the plane B-B the lower inner edges comprise fillets having a first radius (R | 2012-06-21 |
20120156797 | Luminescent nanochannel sensors - In a nanochannel thin film in which oxide layers have surfactant micelles therein, the presence of a target substance in a sample solution is detected with a luminescence intensity of a thin film provided by recognition of the target substance with a luminescent recognition reagent in the nanochannels. Upon focusing on a hydrophobic field provided by the presence of the surfactant in pores of a nanometer size, the novel development of a sensor function is enabled. | 2012-06-21 |
20120156798 | DETERMINATION OF CORES OR BUILDING BLOCKS AND RECONSTRUCTION OF PARENT MOLECULES IN HEAVY PETROLEUMS AND OTHER HYDROCARBON RESOURCES - A method for the determination of the aromatic cores or building blocks of a vacuum resid by controlled fragmentation. Molecules can be generated from these building blocks. | 2012-06-21 |
20120156799 | AUTOMATED METHOD AND SYSTEM FOR THE ANALYSIS OF TOTAL DIETARY FIBER - The invention consists of a method for determining Total Dietary Fiber (TDF) and its sub-fractions, Insoluble Dietary Fiber (IDF) and Soluble Dietary Fiber (SDF) in food and feed samples which utilizes flexible reaction/filtration containers that can be divided into one or more sections for capturing the IDF and SDF fractions separately or for capturing TDF in its entirety. Each container is fashioned as a bag that can be temporarily sealed in multiple locations to create multiple sections and is made of non-porous and porous material. Use of these containers eliminates the need for problematic transfers of mixtures from beaker to filter, and vastly improves the filtration process. | 2012-06-21 |
20120156800 | LIQUID FEEDING SYSTEM FOR MICROCHIP, SAMPLE DETECTION DEVICE, AND LIQUID FEEDING METHOD FOR LIQUID FEEDING SYSTEM FOR MICROCHIP - A liquid feeding system for a microchip performs: a first liquid feeding step in which a sample liquid in a sample liquid containing section is fed in the direction to a primary containing section via a reaction field; a second liquid feeding step in which, after the first liquid feeding step, the sample liquid is fed from the primary containing section in the direction to the reaction field; and a third liquid feeding step in which, after the second liquid feeding step, the feedings of the sample liquid from and to the reaction field and the primary containing section a rear side gas-liquid boundary face of the sample liquid in the first liquid feeding step and the front side and rear side gas-liquid boundary faces of the sample liquid in the second and third liquid feeding steps do not pass through the reaction field. | 2012-06-21 |
20120156801 | AUTOMATIC ANALYZER AND ANALYSIS METHOD FOR USE IN THE SAME - An automatic analyzer performs for plural kinds of reagents dispensed at different timings. The automatic analyzer includes a plurality of reaction cells, a reaction cell moving unit for moving the plurality of reaction cells at a certain cycle; a sample dispensing unit for dispensing a sample into a reaction cell and a reagent dispensing unit for dispensing reagents to be added during a sample-reagent reaction process at different timings. | 2012-06-21 |
20120156802 | SWEPT-FREQUENCY SEMICONDUCTOR LASER COUPLED TO MICROFABRICATED BIOMOLECULAR SENSOR AND METHODS RELATED THERETO - An optoelectronic swept-frequency semiconductor laser coupled to a microfabricated optical biomolecular sensor with integrated resonator and waveguide and methods related thereto are described. Biomolecular sensors with optical resonator microfabricated with integrated waveguide operation can be in a microfluidic flow cell. | 2012-06-21 |
20120156803 | BIOLOGICALLY-ACTIVE RADIOLABELED CRY1FA AND RECEPTOR BINDING ASSAY METHODS - Cysteine-specific radiolabeled Cry1Fa protein retains insecticidal activity against insect pests and binds to insect brush border membrane vesicle receptors in a saturable manner. The biologically-active radiolabeled Cry1Fa protein is useful in competitive binding assays with other Cry toxins. | 2012-06-21 |
20120156804 | METHOD FOR DETERMINING PROTEIN-NUCLEIC ACID INTERACTION - The present invention refers to a method of determining protein-nucleic acid interaction. The method comprises mixing a protein with a sample comprising a nucleic acid which is suspected to interact with the protein to form a first mixture. The first mixture can be incubated to allow interaction between the protein and nucleic acid. Metallic nanoparticles are added to the first mixture to obtain a second mixture. An electrolyte is added to the first or second mixture to determine the protein-nucleic acid interaction. The present invention also refers to a kit for determining protein-nucleic acid interaction. The kit comprises a protein capable of interacting with a nucleic acid or a nucleic acid capable of interacting with a protein, and at least one type of metallic nanoparticle. | 2012-06-21 |
20120156805 | Assay For Immunosuppressant Drugs - The invention provides immunoassays for immunosuppressant drugs, wherein the assay is carried out under high salt conditions to achieve improved sensitivity. The invention also provides kits that are useful for performing the methods of the invention. | 2012-06-21 |
20120156806 | MAGNETIC RANDOM ACCESS MEMORY INTEGRATION HAVING IMPROVED SCALING - A conductive via for connecting between a digit line and one side of the magnetic device is positioned beneath, and aligned with, each magnetic device. Other contacts may satisfy the same design rules, using the same process step. An electrode formed on the conductive via is polished to eliminate step functions or seams originating at the conductive via from propagating up through the various deposited layers. This integration approach allows for improved scaling of the MRAM devices to at least a 45 nanometer node, a cell packing factor approaching 6F | 2012-06-21 |
20120156807 | METHOD OF UPDATING CALIBRATION DATA AND A DEVICE MANUFACTURING METHOD - A method of updating calibration data of a first position detection system adapted to determine the position of an object, is presented. The first position detection system includes a target and a plurality of sensors one of which is mounted on an object and the calibration data including coefficients relating an apparent measured position to an actual position and which can be used to convert an apparent measured position to an actual position thereby to correct for physical imperfections in the first position detection system and enable determination of the actual position from the apparent measured position. | 2012-06-21 |
20120156808 | METHOD FOR APPLYING LIQUID MATERIAL, AND APPARATUS AND PROGRAM FOR SAME - Provided are a method for filling a liquid material, and an apparatus and a program for the same, which make it possible, without changing a moving speed of an ejection device, to correct a change in ejection amount and to stabilize an application shape. Disclosed are: a method for filling a liquid material into a gap between a substrate and a work by using the capillary action; and an apparatus and a program for the same. The method comprises the steps of: generating an application pattern consisting of a plurality of application areas continuous to one another; assigning a plurality of ejection cycles, each obtained by combining the number of ejection pulses and the number of pause pulses at a predetermined ratio therebetween, to each of the application areas; and measuring an ejection amount at correction intervals and calculating a correction amount for the ejection amount. The method further comprises at least any one of the steps of: adjusting the numbers of ejection pulses and the numbers of pause pulses, which are included in the application pattern, based on the calculated correction amount; and adjusting the length of any application area continuous to at least one application area without changing ejection amounts per unit time in the respective application areas. | 2012-06-21 |
20120156809 | MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, EXPOSURE METHOD, AND EXPOSURE APPARATUS - An exposure apparatus includes a light emission part | 2012-06-21 |
20120156810 | INSPECTION METHOD, INSPECTION APPARATUS, EXPOSURE CONTROL METHOD, EXPOSURE SYSTEM, AND SEMICONDUCTOR DEVICE - There is provided an inspection method for inspecting a substrate supporting portion configured to support a substrate during an exposure performed by an exposure apparatus, the method including: irradiating a surface of the exposed substrate with an illumination light beam; detecting reflected light from a pattern in the irradiated surface; determining a focusing state at the time of exposing the pattern of the substrate based on the detected reflected light; and inspecting a state of the substrate supporting portion based on the focusing state. | 2012-06-21 |
20120156811 | METHODS OF ADDING PADS AND ONE OR MORE INTERCONNECT LAYERS TO THE PASSIVATED TOPSIDE OF A WAFER INCLUDING CONNECTIONS TO AT LEAST A PORTION OF THE INTEGRATED CIRCUIT PADS THEREON - A pattern of conductive ink is disposed on the topside of the unsingulated integrated circuits of a wafer, and, typically after wafer probing, the pattern of conductive ink is removed. The conductive ink pattern provides an electrical pathway between bond pads on an integrated circuit and large contact pads disposed on the topside of the integrated circuit. Each of the large contact pads is much greater in area than the corresponding bond pads, and are spaced apart so that the pitch of the large contact pads is much greater than that of the bond pads. In one aspect of the present invention, the conductive ink includes a mixture of conductive particles and wafer bonding thermoset plastic. In another aspect of the present invention, the conductive ink is heated and disposed on a wafer by an ink jet printing system. | 2012-06-21 |
20120156812 | MASK FRAME ASSEMBLY, METHOD OF MANUFACTURING THE SAME, AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE USING THE MASK FRAME ASSEMBLY - A mask frame includes a frame and a mask installed on the frame while being stretched in a first direction. The mask includes a deposition area including a plurality of deposition pattern portions, an edge unit formed to have a thickness greater than a thickness of the deposition area and including a first edge and a second edge that extend in the first direction on two sides of the deposition area, and two or more ribs formed to have a thickness greater than the thickness of the deposition area between deposition pattern portions adjacent to each other in a second direction perpendicular to the first direction. | 2012-06-21 |
20120156813 | ORGANIC LIGHT EMITTING DISPLAY DEVICE AND FABRICATING METHOD THEREOF - An organic light emitting display includes a substrate, a semiconductor layer arranged on the substrate, an organic light emitting diode arranged on the semiconductor layer, an encapsulant arranged on an top surface periphery of the substrate, which is an outer periphery of the semiconductor layer and the organic light emitting diode, an encapsulation substrate bonded to the encapsulant, and a bonding agent arranged on an under surface of the substrate which is opposite to the encapsulant. | 2012-06-21 |
20120156814 | Phase-shift mask with assist phase regions - A phase-shift mask having a checkerboard array and a surrounding sub-resolution assist phase pattern. The checkerboard array comprises alternating phase-shift regions R that have a relative phase difference of 180 degrees. The sub-resolution assist phase regions R′ reside adjacent corresponding phase-shift regions R and have a relative phase difference of 180 degrees thereto. The sub-resolution assist phase regions R′ are configured to mitigate undesirable edge effects when photolithographically forming photoresist features. Method of forming LEDs using the phase-shift mask are also disclosed. | 2012-06-21 |
20120156815 | METHOD FOR FABRICATING LIGHT EMITTING DIODE CHIP - A method for fabricating an LED chip includes: providing a sapphire substrate with a SiO | 2012-06-21 |
20120156816 | SAPPHIRE WAFER DIVIDING METHOD - A sapphire wafer dividing method including a modified layer forming step of forming a plurality of modified layers inside a sapphire wafer along a plurality of crossing division lines formed on the front side where a light emitting layer is formed, and a chamfering and dividing step of forming a plurality of cut grooves on the back side of the sapphire wafer along the division lines, thereby dividing the sapphire wafer into individual light emitting devices along the modified layers as a division start point, wherein the corners of the back side of each light emitting device are chamfered by the formation of the cut grooves in the chamfering and dividing step. | 2012-06-21 |
20120156817 | Method for Manufacturing High-quality Organic Light-emitting Diode - The present invention discloses a method for manufacturing a high-quality organic light-emitting diode (OLED), and the method comprises the steps of: providing a substrate; providing at least one template engraved with a pattern; putting at least one organic light-emitting material onto the pattern of the template by an inking process; transferring the organic light-emitting material from the pattern of the template to the substrate by a contact printing process; forming at least one organic light-emitting layer on the substrate, wherein the organic light-emitting layer comprises a plurality of pixels which are arranged in a side by side manner with a complementary emission spectrum, so that the OLED possesses the property of high color rendering, color temperature tunable, or the combination thereof. | 2012-06-21 |
20120156818 | THIN FILM DEPOSITION APPARATUS AND METHOD OF MANUFACTURING ORGANIC LIGHT-EMITTING DISPLAY DEVICE BY USING THE SAME - A thin film deposition apparatus that may be easily manufactured, that may be easily applied to manufacture large-sized display devices on a mass scale, and that improves manufacturing yield and deposition efficiency, and a method of manufacturing an organic light-emitting display device by using the thin film deposition apparatus are disclosed. The thin film deposition apparatus for forming a thin film on a substrate, the thin film deposition apparatus including: a magnet disposed on a first surface of the substrate; a patterning wheel disposed on a second surface opposite to the first surface of the substrate, rotatable around a rotation axis, and including a plurality of grooves along a peripheral surface; and a patterning wire including a plurality of blockers having shapes corresponding to the plurality of grooves of the patterning wheel, and windable to the patterning wheel. | 2012-06-21 |
20120156819 | GALLIUM NITRIDE-BASED LED FABRICATION WITH PVD-FORMED ALUMINUM NITRIDE BUFFER LAYER - Fabrication of gallium nitride-based light emitting diodes (LEDs) with physical vapor deposition (PVD) formed aluminum nitride buffer layers is described. | 2012-06-21 |
20120156820 | COMPOSITE SACRIFICIAL STRUCTURE FOR RELIABLY CREATING A CONTACT GAP IN A MEMS SWITCH - The present Disclosure provides for fabrication devices and methods for manufacturing a micro-electromechanical system (MEMS) switch on a substrate. The MEMS fabrication device may have a first and second sacrificial layer that form the mold of an actuation member. The actuation member is formed over the first and second sacrificial layers to manufacture a MEMS switch from the MEMS fabrication device. | 2012-06-21 |
20120156821 | Method for Making a Solar Cell - Disclosed is a method for making a solar cell. In the method, there are provided first and second substrates each including first and second faces. There are provided first and second coating devices and a joining device. The first coating device is used to form a transparent electrode layer on the first face of the first substrate. The second coating device is used to form an absorbing layer on the first face of the second substrate. The second substrate is selenized by hot pressing. The joining device is used to join together the first and second substrates by joining the transparent electrode layer with the absorbing layer. The transparent electrode layer is joined with the absorbing layer by hot pressing. Thus, the solar cell is not made by coating one layer on another. Time for making the solar cell is reduced. | 2012-06-21 |
20120156822 | SOLAR CELL MODULE - A solar cell module is provided that comprises: a solar cell; a connection electrode provided on each of a light-receiving surface and back surface of the solar cell; a conductive resin adhesive arranged on an upper surface of the connection electrode; and a wiring material electrically connected to the solar cell and connected with the connection electrode and the conductive resin adhesive, wherein the conductive resin adhesive changes color upon curing, and the conductive resin adhesive on the upper surface of the connection electrode provided on the light-receiving surface of the solar cell is arranged within a region corresponding to at least one of the connection electrode and the wiring material, on a projection plane parallel with the light-receiving surface and exposed on a light-receiving surface side. | 2012-06-21 |
20120156823 | METHOD OF FORMING SEMICONDUCTOR DEVICE - A method of forming a semiconductor device includes preparing a semiconductor substrate having a plurality of chips formed thereon and a scribe lane disposed between the chips, simultaneously forming a groove having a first depth in the scribe lane, and a through hole penetrating the chips and having a second depth. The chips are separated along the groove. The first depth is smaller than the second depth. | 2012-06-21 |
20120156824 | BONDING SOLAR CELLS DIRECTLY TO POLYIMIDE - A method of constructing a solar cell panel is disclosed that includes providing a solar cell that has a front side and a back side, where the front side faces the sun during normal operation, heating a thermoplastic polyimide to at least its reflow temperature, flowing the thermoplastic polyimide onto the back side of the solar cell while heated to at least its reflow temperature, and cooling the thermoplastic polyimide to a temperature below its reflow temperature to bond the thermoplastic polyimide directly to the solar cell. The direct bonding of the thermoplastic polyimide to the solar cell is accomplished without an adhesive such as RTV adhesives. The method may also include bonding a substrate directly to the thermoplastic polyimide opposite the solar cell. | 2012-06-21 |
20120156825 | Transparent Contacts Organic Solar Panel by Spray - A method of fabricating organic solar panels with transparent contacts. The method uses a layer-by-layer spray technique to create the anode layer. The method includes placing the substrate on a flat magnet, aligning a magnetic shadow mask over the substrate, applying photoresist to the substrate using spray photolithography, etching the substrate, cleaning the substrate, spin coating a tuning layer on substrate, spin coating an active layer of P3HT/PCBM on the substrate, spray coating the substrate with a modified PEDOT solution, and annealing the substrate. | 2012-06-21 |
20120156826 | METHOD OF FABRICATING AVALANCHE PHOTODIODE - A method includes: forming an epitaxy wafer by growing a light absorbing layer, a grading layer, an electric field buffer layer, and an amplifying layer on the front surface of a substrate in sequence; forming a diffusion control layer on the amplifying layer; forming a protective layer for protecting the diffusion control layer on the diffusion control layer; forming an etching part by etching from the protective layer to a predetermined depth of the amplifying layer; forming a first patterning part by patterning the protective layer; forming a junction region and a guardring region at the amplifying layer by diffusing a diffusion material to the etching part and the first patterning part; removing the diffusion control layer and the protective layer and forming a first electrode connected to the junction region on the amplifying layer; and forming a second electrode on the rear surface of the substrate. | 2012-06-21 |
20120156827 | METHOD FOR FORMING CADMIUM TIN OXIDE LAYER AND A PHOTOVOLTAIC DEVICE - In one aspect of the present invention, a method is provided. The method includes disposing a substantially amorphous cadmium tin oxide layer on a support and rapidly thermally annealing the substantially amorphous cadmium tin oxide layer by exposing a first surface of the substantially amorphous cadmium tin oxide layer to an electromagnetic radiation to form a transparent layer. A method of making a photovoltaic device is also provided. | 2012-06-21 |
20120156828 | METHODS FOR FORMING A TRANSPARENT OXIDE LAYER FOR A PHOTOVOLTAIC DEVICE - A method of manufacturing a transparent oxide layer is provided. The manufacturing method includes disposing a cadmium tin oxide layer on a support, placing the support with the cadmium tin oxide layer within a chamber of a rapid thermal annealing system, and rapidly thermally annealing the cadmium tin oxide layer by exposing the cadmium tin oxide layer to electromagnetic radiation to form the transparent oxide layer, wherein the rapid thermal anneal is performed without first pumping down the chamber. | 2012-06-21 |
20120156829 | POLYMERIC SEMICONDUCTORS, DEVICES, AND RELATED METHODS - A polymer comprises a polymeric chain represented by formula (I) or (II). In formula (I), a, b, c, d, and n are integers, a from 0 to 3, b from 1 to 5, c from 1 to 3, d from 1 to 5, and n from 2 to 5000; R | 2012-06-21 |
20120156830 | METHOD OF FORMING A RING-SHAPED METAL STRUCTURE - A method includes providing a first semiconductor chip comprising a ring-shaped metal structure extending along a contour of a first main surface of the semiconductor chip. The method includes encapsulating the first semiconductor chip with an encapsulation body thereby defining a second main surface and depositing a metal layer over the first semiconductor chip and the encapsulation body. A plurality of external contact pads are placed over the second main surface of the encapsulation body, the metal layer electrically coupling at least one external contact pad of the plurality of external contact pads to the ring-shaped metal structure. A seal ring is placed between the ring-shaped metal structure and the contour of the first main surface of the first semiconductor chip. | 2012-06-21 |
20120156831 | METHOD OF MANUFACTURING CARD - This IC card is provided with a module having an inlet, an adhesive layer covering the module, and a first base material and second base material sandwiching the module with interposition of the adhesive layer. The module is disposed on one face of the first base material with interposition of a viscous layer which has a thickness that varies according to the thickness at each area of the module, and its two ends are narrower than its other parts when viewed from the outer face side of the first base material or the outer face side of the second base material. According to this IC card, it is possible to offer the IC card with a flat surface, and without occurrence of strain in the embedded IC chip. | 2012-06-21 |
20120156832 | ELECTRONIC COMPONENT - An electronic component and method of making an electronic component is disclosed. In one embodiment, the electronic component includes a frame having a base layer, a first layer, a second layer including palladium placed on the first layer, and a third layer including gold placed on the second layer. A semiconductor chip is positioned on the frame. | 2012-06-21 |
20120156833 | NANOWIRE TRANSISTOR AND METHOD FOR FABRICATING THE SAME - A nanowire transistor according to the present invention includes: at least one nanowire | 2012-06-21 |
20120156834 | METHODS FOR MANUFACTURING ARRAY SUBSTRATES - Disclosed is a patterned photoresist layer on a passivation layer, formed by a lithography process with a multi-tone photomask, having a non-photoresist region, a thin photoresist pattern, and a thick photoresist pattern. The passivation layer corresponding to the non-photoresist region is removed, thereby forming vias to expose a part of a drain electrode in a TFT and a part of a top electrode in a storage capacitor, respectively. The thin photoresist pattern is then ashed to expose the passivation layer in a pixel region. Thereafter, a conductive layer is selectively deposited on the exposed passivation layer and on the sidewalls/bottoms of the vias. Subsequently, the remaining thick photoresist pattern is ashed. | 2012-06-21 |
20120156835 | ETCHING METHOD AND MANUFACTURING METHOD OF THIN FILM TRANSISTOR - The amorphous silicon film is formed over the microcrystalline silicon film, and plasma treatment is performed on the amorphous silicon film in a mixed gas atmosphere of H | 2012-06-21 |
20120156836 | METHOD FOR FORMING III-V SEMICONDUCTOR STRUCTURES INCLUDING ALUMINUM-SILICON NITRIDE PASSIVATION - A method for fabricating a semiconductor structure includes forming a semiconductor layer over a substrate and forming an aluminum-silicon nitride layer upon the semiconductor layer. When the semiconductor layer in particular comprises a III-V semiconductor material such as a group III nitride semiconductor material or a gallium nitride semiconductor material, the aluminum-silicon nitride material provides a superior passivation in comparison with a silicon nitride material. | 2012-06-21 |
20120156837 | Sacrificial Spacer Approach for Differential Source/Drain Implantation Spacers in Transistors Comprising a High-K Metal Gate Electrode Structure - In complex semiconductor devices, the profiling of the deep drain and source regions may be accomplished individually for N-channel transistors and P-channel transistors without requiring any additional process steps by using a sacrificial spacer element as an etch mask and as an implantation mask for incorporating the drain and source dopant species for deep drain and source areas for one type of transistor. On the other hand, the usual main spacer may be used for the incorporation of the deep drain and source regions of the other type of transistor. | 2012-06-21 |
20120156838 | MULTI-GATE NON-PLANAR FIELD EFFECT TRANSISTOR STRUCTURE AND METHOD OF FORMING THE STRUCTURE USING A DOPANT IMPLANT PROCESS TO TUNE DEVICE DRIVE CURRENT - Disclosed are embodiments of a semiconductor structure that includes one or more multi-gate field effect transistors (MUGFETs), each MUGFET having one or more semiconductor fins. In the embodiments, dopant implant region is incorporated into the upper portion of the channel region of a semiconductor fin in order to selectively modify (i.e., decrease or increase) the threshold voltage within that upper portion relative to the threshold voltage in the lower portion and, thereby to selectively modify (i.e., decrease or increase) device drive current. In the case of a multiple semiconductor fins, the use of implant regions, the dopant conductivity type in the implant regions and/or the sizes of the implant regions can be varied from fin to fin within a multi-fin MUGFET or between different single and/or multi-fin MUGFETs so that individual device drive current can be optimized. Also disclosed herein are embodiments of a method of forming the semiconductor structure. | 2012-06-21 |
20120156839 | Patterning of a Stressed Dielectric Material in a Contact Level Without Using an Underlying Etch Stop Layer - An efficient strain-inducing mechanism may be implemented in the form of differently stressed material layers that are formed above transistors of different types. The strain-inducing dielectric materials may be formed so as to be in direct contact with the corresponding transistors, thereby enhancing the overall strain transfer efficiency. Moreover, the disclosed manufacturing strategy avoids or at least significantly reduces any interaction of reactive etch atmospheres used to pattern the strain-inducing material layers with metal silicide regions, which may be formed individually for each type of transistor. | 2012-06-21 |
20120156840 | PHASE CHANGE MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME - A phase change memory device having a strain transistor and a method of making the same are presented. The phase change memory device includes a semiconductor substrate, a junction word line, switching diodes, and a strain transistor. The semiconductor substrate includes a cell area and a core/peri area. The junction word line is formed in the cell area of the semiconductor substrate and includes a strain stress supplying layer doped with impurities. The switching diodes are electrically coupled to the junction word line. The strain transistor is formed in the core/peri area of the substrate and acts as a driving transistor. | 2012-06-21 |
20120156841 | METHOD OF FABRICATING A SEMICONDUCTOR MEMORY DEVICE - A method of fabricating a semiconductor device according to present invention includes forming a stack layers on a semiconductor substrate having a first area and a second area; forming first gates on the semiconductor substrate of the first area by patterning the stack layers, wherein the first gates are formed a first distance apart from each other; forming a first impurity injection area in the semiconductor substrate of the first area exposed at both sides of each of the first gates; filling a space between the first gates with an insulating layer; forming second gates on the semiconductor substrate of the second area by patterning the stack layers, wherein the second gates are formed a second distance apart from each other, and wherein the second distance is larger than the first distance; and forming a second impurity injection area in the semiconductor device of the second area exposed between the second gates. | 2012-06-21 |
20120156842 | METHOD OF MANUFACTURING SEMICONDUCTOR MEMORY DEVICE - A semiconductor memory device and a method of manufacturing the same. The semiconductor memory device includes a first conductive type well and a second conductive type well disposed on and/or over a semiconductor substrate; a first gate and a second gate disposed on and/or over the first conductive type well and the second conductive type well, respectively; a second conductive type first ion implantation region disposed in the first conductive type well at one side of the first gate and a second conductive type second ion implantation region disposed in the first conductive type well at the other side of the first gate; a first conductive type first ion implantation region disposed in the second conductive type well at one side of the second gate and a first conductive type second ion implantation region disposed in the second conductive type well at the other side of the second gate; and a line electrically connecting the second conductive type second ion implantation region with the first conductive type first ion implantation region. | 2012-06-21 |
20120156843 | DIELECTRIC LAYER FOR GALLIUM NITRIDE TRANSISTOR - A dielectric layer for a gallium nitride transistor is disclosed. In one example, the dielectric layer has a hydrogen content of less than or equal to 10% by atomic percentage. In one example, both a dielectric layer formed before a conductive electrode of the transistor and a dielectric layer formed after the conductive elective electrode have a hydrogen content of less than or equal to 10% by atomic percentage. In one example, the dielectric layer formed before the conductive electrode is formed by a LPCVD process and the dielectric layer formed after the conductive electrode is formed by a sputtering process. | 2012-06-21 |
20120156844 | SEMICONDUCTOR DEVICES INCLUDING VERTICAL CHANNEL TRANSISTORS AND METHODS OF FABRICATING THE SAME - Methods of fabricating semiconductor devices may include forming first trenches in a substrate to define fin patterns and forming buried dielectric patterns filling lower regions of the first trenches. The first trenches extend in parallel. A gate dielectric layer is formed on upper inner sidewalls of the first trenches, and a gate conductive layer filling the first trenches is formed on the substrate including the gate dielectric layer. The gate conductive layer, the gate dielectric layer and the fin patterns are patterned to form second trenches crossing the first trenches and defining active pillars. Semiconductor devices may also be provided. | 2012-06-21 |
20120156845 | METHOD OF FORMING A FIELD EFFECT TRANSISTOR AND SCHOTTKY DIODE - A method for forming a field effect transistor and Schottky diode includes forming a well region in a first portion of a silicon region where the field effect transistor is to be formed but not in a second portion of the silicon region where the Schottky diode is to be formed. Gate trenches are formed extending into the silicon region. A recessed gate is formed in each gate trench. A dielectric cap is formed over each recessed gate. Exposed surfaces of the well region are recessed to form a recess between every two adjacent trenches. Without masking any portion of the active area, a zero-degree blanket implant is performed to form a heavy body region of the second conductivity type in the well region between every two adjacent trenches. | 2012-06-21 |
20120156846 | Semiconductor Devices Comprising a Channel Semiconductor Alloy Formed with Reduced STI Topography - In sophisticated semiconductor devices, a semiconductor alloy, such as a threshold adjusting semiconductor material in the form of silicon/germanium, may be provided in an early manufacturing stage selectively in certain active regions, wherein a pronounced degree of recessing and material loss, in particular in isolation regions, may be avoided by providing a protective material layer selectively above the isolation regions. For example, in some illustrative embodiments, a silicon material may be selectively deposited on the isolation regions. | 2012-06-21 |
20120156847 | LAYER FORMATION WITH REDUCED CHANNEL LOSS - Insulating layers can be formed over a semiconductor device region and etched in a manner that substantially reduces or prevents the amount of etching of the underlying channel region. A first insulating layer can be formed over a gate region and a semiconductor device region. A second insulating layer can be formed over the first insulating layer. A third insulating layer can be formed over the second insulating layer. A portion of the third insulating layer can be etched using a first etching process. A portion of the first and second insulating layers beneath the etched portion of the third insulating layer can be etched using at least a second etching process different from the first etching process. | 2012-06-21 |
20120156848 | METHOD OF MANUFACTURING NON-VOLATILE MEMORY DEVICE AND CONTACT PLUGS OF SEMICONDUCTOR DEVICE - A method of manufacturing a non-volatile memory device includes alternately stacking interlayer sacrificial layers and interlayer insulating layers on a substrate, forming first openings exposing the substrate, forming sidewall insulating layers on sidewalls of the first openings, and forming channel regions on the sidewall insulating layers. The first openings penetrate the interlayer sacrificial layers and the interlayer insulating layers. The sidewall insulating layers have different thicknesses according to distances from the substrate. | 2012-06-21 |
20120156849 | METHOD FOR FABRICATING SEMICONDUCTOR DEVICE - A method for fabricating a semiconductor device includes forming a storage node contact plug over a cell region of a substrate, forming a first inter-layer dielectric layer over the substrate, forming a first bit line over the first inter-layer dielectric layer in a peripheral region of the substrate, forming a second inter-layer dielectric layer over the first inter-layer dielectric layer, forming a second bit line over the second inter-layer dielectric layer, etching the second inter-layer dielectric layer to expose an upper surface of the storage node contact plug in the cell region, forming a capacitor contacting the storage node contact plug, forming a third inter-layer dielectric layer over the substrate having the capacitor formed thereon, forming a metal contact through the third inter-layer dielectric layer to contact the second bit line in the peripheral region, and forming a metal line contacting the metal contact over the third inter-layer dielectric layer. | 2012-06-21 |
20120156850 | METHOD FOR FABRICATING FINE PATTERN - A method for fabricating a fine pattern includes forming a first photomask including first light transmission regions set in a line shape over a first phase shift mask (PSM) region and a first binary mask (BM) region adjacent to the first phase shift mask region. A second photomask may be formed to include second light transmission regions set in a line shape over a second phase shift mask region and a second binary mask region adjacent to the second phase shift mask region, wherein the second light transmission regions intersect the first light transmission regions. A resist layer may first be exposed using the first photomask and secondly exposed using the second photomask. The first and secondly exposed resist layer may be developed to form resist patterns with open regions corresponding to portions where the first light transmission regions intersect the second light transmission regions. | 2012-06-21 |
20120156851 | PHASE CHANGE MEMORY DEVICE AND FABRICATION METHOD THEREOF - A phase change memory device is provided that includes a switching device, a bottom electrode contact in contact with the switching device and a porous spacer formed on the bottom electrode contact. | 2012-06-21 |
20120156852 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A gate insulating film is formed on a main surface of a substrate in which an element isolation region is formed. A metal film is formed on the gate insulating film. A silicon film is formed on the metal film. A gate electrode of a MIS transistor composed of a stacked structure of the silicon film and metal film is formed on an element region and a high-resistance element composed of a stacked structure of the silicon film and metal film is formed on the element isolation region by patterning the silicon film and metal film. An acid-resistant insulating film is formed on the side of the gate electrode. The metal film of the high-resistance element is oxidized. A diffused layer of the MIS transistor is formed in the substrate. | 2012-06-21 |
20120156853 | HIGHLY INTEGRATED PHASE CHANGE MEMORY DEVICE HAVING MICRO-SIZED DIODES AND METHOD FOR MANUFACTURING THE SAME - A highly integrated phase change memory device and a method for manufacturing the same is disclosed. The highly integrated phase change memory device includes a semiconductor substrate having a cell area and a peripheral area with impurity regions formed in the cell area and extending in parallel to each other in a first direction to form a striped pattern. A gate electrode is formed in the peripheral area and dummy gate electrodes are formed in the cell area and extending in a second direction perpendicular to the first direction of the impurity regions. An interlayer dielectric layer pattern exposes portions of the cell area and the peripheral area and a PN diode is formed in a space defined by a pair of dummy gate electrodes and a pair of interlayer dielectric layer patterns. | 2012-06-21 |
20120156854 | METHOD OF FORMING STACKED METAL OXIDE LAYERS - This disclosure provides a method of fabricating a semiconductor stack and associated device, such as a capacitor or DRAM cell. In such a device, a high-K zirconia-based layer may be used as the primary dielectric together with a relatively inexpensive metal electrode based on titanium nitride. To prevent corruption of the electrode during device formation, a thin barrier layer can be used seal the electrode prior to the use of a high temperature process and a (high-concentration or dosage) ozone reagent (i.e., to create a high-K zirconia-based layer). In some embodiments, the barrier layer can also be zirconia-based, for example, a thin layer of doped or un-doped amorphous zirconia. Fabrication of a device in this manner facilitates formation of a device with dielectric constant of greater than 40 based on zirconia and titanium nitride, and generally helps produce less costly, increasingly dense DRAM cells and other semiconductor structures. | 2012-06-21 |