24th week of 2014 patent applcation highlights part 16 |
Patent application number | Title | Published |
20140158974 | RESISTANCE-SWITCHING MEMORY CELLS ADAPTED FOR USE AT LOW VOLTAGE - A memory cell is provided that includes a diode and a resistance-switching material layer coupled in series with the diode. The resistance-switching material layer has a thickness between 20 and 65 angstroms. Other aspects are also provided. | 2014-06-12 |
20140158975 | MEMORY CELL THAT INCLUDES A SIDEWALL COLLAR FOR PILLAR ISOLATION AND METHODS OF FORMING THE SAME - A method of forming a memory cell is provided. The method includes forming a steering element pillar having a first stiffness and a sidewall, forming a sidewall collar along at least a portion of the sidewall of the steering element pillar, the sidewall collar having a second stiffness, wherein the second stiffness is greater than the first stiffness, and forming a memory element coupled to the steering element pillar. Numerous other aspects are provided. | 2014-06-12 |
20140158976 | III-N SEMICONDUCTOR-ON-SILICON STRUCTURES AND TECHNIQUES - III-N semiconductor-on-silicon integrated circuit structures and techniques are disclosed. In some cases, the structure includes a first semiconductor layer formed on a nucleation layer, the first semiconductor layer including a 3-D GaN layer on the nucleation layer and having a plurality of 3-D semiconductor structures, and a 2-D GaN layer on the 3-D GaN layer. The structure also may include a second semiconductor layer formed on or within the first semiconductor layer, wherein the second semiconductor layer includes AlGaN on the 2-D GaN layer and a GaN layer on the AlGaN layer. Another structure includes a first semiconductor layer formed on a nucleation layer, the first semiconductor layer comprising a 2-D GaN layer on the nucleation layer, and a second semiconductor layer formed on or within the first semiconductor layer, wherein the second semiconductor layer includes AlGaN on the 2-D GaN layer and a GaN layer on the AlGaN layer. | 2014-06-12 |
20140158977 | NEAR-INFRARED LIGHT EMITTING DEVICE USING SEMICONDUCTOR NANOCRYSTALS - A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 μm. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core. | 2014-06-12 |
20140158978 | Semiconductor Light-Emitting Element and Laminate Containing Same - A semiconductor light emitting device includes a film of a nitride of a group 13 element grown on a seed crystal substrate by flux method from a melt including a flux and a group 13 element under nitrogen containing atmosphere, an n-type semiconductor layer provided on the film of the nitride, a light emitting region provided on the n-type semiconductor layer, and a p-type semiconductor layer provided on the light emitting region. The film includes an inclusion distributed layer in a region distant by 50 μm or less from an interface of the film on the side of the seed crystal substrate and including inclusions derived from components of the melt, and an inclusion depleted layer with the inclusion depleted formed on the inclusion distributed layer. | 2014-06-12 |
20140158979 | QUANTUM DOT PHOSPHOR FOR LIGHT EMITTING DIODE AND METHOD OF PREPARING THE SAME - Disclosed herein is a quantum dot phosphor for light emitting diodes, which includes quantum dots and a solid substrate on which the quantum dots are supported. Also, a method of preparing the quantum dot phosphor is provided. Since the quantum dot phosphor of the current invention is composed of the quantum dots supported on the solid substrate, the quantum dots do not aggregate when dispensing a paste obtained by mixing the quantum dots with a paste resin for use in packaging of a light emitting diode. Thereby, a light emitting diode able to maintain excellent light emitting efficiency can be manufactured. | 2014-06-12 |
20140158980 | Emitting Device with Compositional and Doping Inhomogeneities in Semiconductor Layers - A device including one or more layers with lateral regions configured to facilitate the transmission of radiation through the layer and lateral regions configured to facilitate current flow through the layer is provided. The layer can comprise a short period superlattice, which includes barriers alternating with wells. In this case, the barriers can include both transparent regions, which are configured to reduce an amount of radiation that is absorbed in the layer, and higher conductive regions, which are configured to keep the voltage drop across the layer within a desired range. | 2014-06-12 |
20140158981 | MULTIPLE QUANTUM WELL FOR ULTRAVIOLET LIGHT EMITTING DIODE AND A PRODUCTION METHOD THEREFOR - A multiple quantum well structure for an ultraviolet light-emitting diode, comprising: an Al | 2014-06-12 |
20140158982 | LIGHT-EMITTING DEVICE, BACKLIGHT UNIT, DISPLAY DEVICE, AND MANUFACTURING METHOD THEREOF - A light emitting device may include: a light emitting unit; a wavelength conversion unit disposed in a path of light emitted from the light emitting unit and converting a wavelength of light emitted from the light emitting unit; and a light transmission unit formed on at least one side of the wavelength conversion unit. The wavelength conversion unit may include a first quantum dot converting a wavelength of light into red light and a second quantum dot converting a wavelength of light into green light, and the patterns of first quantum dot and second quantum dot are alternately disposed repeatedly at least one or more times. | 2014-06-12 |
20140158983 | NITRIDE SEMICONDUCTOR ULTRAVIOLET LIGHT-EMITTING ELEMENT - A nitride semiconductor ultraviolet light-emitting element is provided with: an underlying structure portion including a sapphire (0001) substrate and an AlN layer formed on the substrate; and a light-emitting element structure portion including an n-type cladding layer of an n-type AlGaN based semiconductor layer, an active layer having an AlGaN based semiconductor layer, and a p-type cladding layer of a p-type AlGaN based semiconductor layer, formed on the underlying structure portion. The (0001) surface of the substrate is inclined at an off angle which is equal to or greater than 0.6° and is equal to or smaller than 3.0°, and an AlN molar fraction of the n-type cladding layer is equal to or higher than 50%. | 2014-06-12 |
20140158984 | SEMICONDUCTOR STRUCTURE - A semiconductor structure includes a silicon substrate, an aluminum nitride layer and a plurality of grading stress buffer layers. The aluminum nitride layer is disposed on the silicon substrate. The grading stress buffer layers are disposed on the aluminum nitride layer. Each grading stress buffer layer includes a grading layer and a transition layer stacked up sequentially. A chemical formula of the grading layer is Al | 2014-06-12 |
20140158985 | SEMICONDUCTOR HETEROSTRUCTURE FIELD EFFECT TRANSISTOR AND METHOD FOR MAKING THEREOF - A heterostructure field effect transistor is provided comprising a semiconductor wire comprising in its longitudinal direction a source and a drain region, a channel region in between the source and drain region and in its transversal direction for the source region, a source core region and a source shell region disposed around the source core region, the source shell region having in its transversal direction for the drain region, a drain core region and a drain shell region disposed around the drain core region, the drain shell region having in its transversal direction for the channel region, a channel core region and a channel shell region disposed around the channel core region; wherein the thickness of the channel shell region is smaller than the thickness of the source shell region and is smaller than the thickness of the drain shell region. | 2014-06-12 |
20140158986 | Highly Conductive Nano-structures incorporated in Semiconductor Nanocomposites - The presently claimed invention provides a highly conductive composite used for electric charge transport, and a method for fabricating said composite. The composite comprises a plurality of one-dimensional semiconductor nanocomposites and highly conductive nanostructures, and the highly conductive nanostructures are incorporated into each of the one-dimensional semiconductor nanocomposite. The composite is able to provide fast electric charge transport, and reduce the rate of electron-hole recombination, ultimately increasing the power conversion efficiency for use in solar cell; provide fast electrons transport, storage of electrons and large surface area for adsorption and reaction sites of active molecular species taking part in photocatalytic reaction; enhance the sensitivity of a surface for biological and chemical sensing purposes for use in biological and chemical sensors; and lower the impedance and increase the charge storage capacity of a lithium-ion battery. | 2014-06-12 |
20140158987 | METHODS FOR INTEGRATING AND FORMING OPTICALLY TRANSPARENT DEVICES ON SURFACES - An apparatus, system, and/or method are described to enable optically transparent reconfigurable integrated electrical components, such as antennas and RF circuits to be integrated into an optically transparent host platform, such as glass. In one embodiment, an Ag NW film may be configured as a transparent conductor for antennas and/or as interconnects for passive circuit components, such as capacitors or resistors. Ag NW may also be used as transmission lines and/or interconnect overlays for devices. A graphene film may also be configured as active channel material for making active RF devices, such as amplifiers and switches. | 2014-06-12 |
20140158988 | GRAPHENE TRANSISTOR - Disclosed is a graphene transistor. The graphene transistor includes a source electrode, a drain electrode, a graphene layer, an insulating layer, a gate electrode and at least one doping layer. The graphene layer is disposed between the source electrode and the drain electrode. The gate electrode is separated from the graphene layer, the source electrode and the drain electrode by the insulating layer. The doping layer is disposed on the graphene layer or beneath the graphene layer for providing dopants for the graphene layer. The doping layer includes nonstoichiometric compounds. The graphene transistor of the present invention has a superior air stability and is not easily affected by environment. | 2014-06-12 |
20140158989 | ELECTRONIC DEVICE INCLUDING GRAPHENE - According to example embodiments, an electronic device includes: a semiconductor layer; a graphene directly contacting a desired (and/or alternatively predetermined) area of the semiconductor layer; and a metal layer on the graphene. The desired (and/or alternatively predetermined) area of the semiconductor layer include one of: a constant doping density, a doping density that is equal to or less than 10 | 2014-06-12 |
20140158990 | Tunneling Field Effect Transistor (TFET) With Ultra Shallow Pockets Formed By Asymmetric Ion Implantation and Method of Making Same - An embodiment integrated circuit device and a method of making the same. The embodiment integrated circuit includes a substrate supporting a source with a first doping type and a drain with a second doping type on opposing sides of a channel region in the substrate, and a pocket disposed in the channel region, the pocket having the second doping type and spaced apart from the drain between about 2 nm and about 15 nm. In an embodiment, the pocket has a depth of between about 1 nanometer to about 30 nanometers. | 2014-06-12 |
20140158991 | SEALED ORGANIC OPTO-ELECTRONIC DEVICES AND RELATED METHODS OF MANUFACTURING - The disclosure relates generally to sealed electronic devices. More particularly, the invention relates to electronic devices employing organic devices having a seal. Packages having organic electronic devices are presented, and a number of sealing mechanisms are provided for hermetically sealing the package to protect the organic electronic device from environmental elements. | 2014-06-12 |
20140158992 | Carbazole Compounds For Delayed Fluorescence - Novel carbazole-containing compounds are provided. The novel compounds also contain electron donor groups, aryl linkers, and at least one nitrogen heterocycle. These novel organic compounds are useful in OLED devices and can exhibit delayed fluorescence. | 2014-06-12 |
20140158993 | PHOSPHORESCENCE-SENSITIZING FLUORESCENCE MATERIAL SYSTEM - Novel molecules are provided that include a sensitizer group, an acceptor group, and an electron-transfer barrier that suppresses triplet-triplet energy transfer between the sensitizer group and the acceptor group. Organic light emitting devices (OLEDs) that include a layer including these novel molecules are also provided. These devices may be used to provide highly efficient OLEDs with longer operational lifetime. | 2014-06-12 |
20140158994 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING SAME - An organic light-emitting display device includes a substrate; a passivation layer disposed on the substrate; at least one color filter disposed on the passivation layer; an overcoat layer covering the at least one color filter; a first electrode disposed on the passivation layer and surrounding the overcoat layer; a second electrode facing the first electrode; and an organic layer disposed between the first electrode and the second electrode. | 2014-06-12 |
20140158995 | ORGANIC ELECTROLUMINESCENT DISPLAY - An organic electroluminescent display includes a first substrate, a pixel, a gate line, a data line, a switching transistor, a power signal line, a driving transistor, and a storage capacitor. The storage capacitor includes first, second, and third electrodes. The first electrode is on the first substrate, and the second electrode includes the same material as the gate line. The second electrode is on the first electrode and insulated from the first electrode. The third electrode is insulated from and on the second electrode, and the third electrode is insulated from the first electrode. | 2014-06-12 |
20140158996 | METHOD OF MANUFACTURING POLY-CRYSTALLINE SILICON LAYER, METHOD OF MANUFACTURING AN ORGANIC LIGHT-EMITTING DISPLAY APPARATUS INCLUDING THE SAME, AND ORGANIC LIGHT-EMITTING DISPLAY APPARATUS MANUFACTURED BY USING THE SAME - A method of manufacturing a polysilicon (poly-Si) layer, a method of manufacturing an organic light-emitting display apparatus using the method, and an organic light-emitting display apparatus manufactured by using the method. The method includes forming an amorphous silicon (a-Si) layer on a substrate having first and second areas, thermally treating the a-Si layer to partially crystallize the a-Si layer into a partially crystallized Si layer, removing a thermal oxide layer through a thermal treatment, selectively irradiating the first areas with laser beams to crystallize the partially crystallized Si layer. | 2014-06-12 |
20140158997 | DUAL-MODE PIXEL INCLUDING EMISSIVE AND REFLECTIVE DEVICES AND DUAL-MODE DISPLAY WITH THE SAME - Provided is a dual-mode display including a substrate, and a plurality of sub pixels on the substrate. Each of the sub pixels may include an emissive device, a reflective optical filter provided on a surface of the emissive device, and an optical shutter provided on other surface of the emissive device. | 2014-06-12 |
20140158998 | ORGANOMETALLIC COMPLEXES, AND ORGANIC ELECTROLUMINESCENT DEVICE AND DISPLAY USING THE SAME - An organometallic complex represented by Chemical Formula 1: | 2014-06-12 |
20140158999 | COMPOUND FOR ORGANIC OPTOELECTRONIC DEVICE, ORGANIC LIGHT EMITTING DIODE INCLUDING THE SAME, AND DISPLAY INCLUDING THE ORGANIC LIGHT EMITTING DIODE - Disclosed are a compound for an organic optoelectronic device, an organic light emitting diode including the same, and a display device including the organic light emitting diode. A compound for an organic optoelectronic device represented by Chemical Formula 1 provides an organic optoelectronic device having an excellent life-span and improved luminous efficiency at a low driving voltage due to excellent electrochemical and thermal stability. | 2014-06-12 |
20140159000 | ORGANIC LIGHT EMITTING DISPLAY APPARATUS AND METHOD OF MANUFACTURING THE SAME - An organic light emitting display apparatus including a thin film encapsulation layer of an improved structure. The organic light emitting display apparatus includes: a display unit formed on a substrate; metal wires formed on an outer portion of the display unit on the substrate; and a thin film encapsulation layer formed by alternately stacking at least one organic layer and at least one inorganic layer on the display unit for sealing the display unit, wherein the at least one organic layer is separated from the metal wires so as not to contact the metal wires. According to the above structure, since the organic layer that is close to the display unit is separated completely from the metal wires formed on an outer portion of the display unit, moisture infiltration to the display unit via the metal wires may be prevented. | 2014-06-12 |
20140159001 | FLEXIBLE ORGANIC LIGHT EMITTING DISPLAY DEVICE - A flexible organic light emitting display device includes: a display panel configured to output an image; a retardation film formed on an upper portion of the display panel to cover the display panel and formed by laminating a half wave plate and a quarter wave plate; and a polarizing plate attached to the retardation film. A color shift in a black screen can be improved by replacing a barrier film used for face seal with a retardation film including a half wave plate and a quarter wave plate combined at a predetermined angle. | 2014-06-12 |
20140159002 | ORGANIC LIGHT EMITTING DIODE DEVICE AND METHOD FOR FABRICATING THE SAME - Disclosed are an organic light emitting diode device, and a method for fabricating the same. The organic light emitting diode device comprises a non-active area formed outside an active area of a substrate; a switching thin film transistor and a driving thin film transistor at each of the pixel regions; a planarization layer on the substrate; a first electrode on the planarization layer; a bank formed in the non-active area outside each pixel region; an organic light emitting layer on the first electrode; a second electrode on an entire surface of the substrate; a first passivation layer on the substrate; an organic layer on the first passivation layer; a second passivation layer on the organic layer and the first passivation layer; a barrier film disposed to face the substrate. | 2014-06-12 |
20140159003 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode (OLED) display device wherein permeation of moisture and oxygen thereinto is prevented and a method of manufacturing the OLED display device are disclosed. The OLED display device includes a substrate, an OLED including a first electrode, an organic emission layer, and a second electrode sequentially formed on the substrate, a protective film formed on the OLED, an encapsulation substrate adhered to an entire surface of the protective film via an adhesive, and a side protective film consisting of a silica film formed by curing a polysilazane solution so as to surround an exterior of elements between the substrate and the encapsulation substrate. | 2014-06-12 |
20140159004 | ACTIVE MATRIX ORGANIC LIGHT EMITTING DIODE PANEL AND METHOD FOR MANUFACTURING THE SAME - The invention discloses an active matrix organic light emitting diode panel and a method for manufacturing the same. The active matrix organic light emitting diode panel includes a substrate, an organic film formed on the substrate, and a plurality of red, green and blue organic light emitting diodes formed on the organic film. A recess or protrusion is formed in the organic film in a region corresponding to the blue organic light emitting diode. The blue organic light emitting diode is formed on the recess or protrusion, and the surface area of the recess or protrusion is larger than the area of the surface where the red or green organic light emitting diodes contacts the organic film. | 2014-06-12 |
20140159005 | ANTHRACENE DERIVATIVE AND ORGANIC ELECTROLUMINESCENT ELEMENT USING THE SAME - An anthracene derivative represented by the following formula (1): | 2014-06-12 |
20140159006 | AROMATIC AMINE DERIVATIVE AND ELECTROLUMINESCENCE DEVICE USING THE SAME - Provided are a novel aromatic amine derivative having a specific structure and an organic electroluminescence device in which an organic thin layer comprising a single layer or plural layers including a light emitting layer is interposed between a cathode and an anode, wherein at leas one layer of the above organic thin layer contains the aromatic amine derivative described above in the form of a single component or a mixed component. Thus, the organic electroluminescence device is less liable to be crystallized in molecules, improved in a yield in producing the organic electroluminescence device and extended in a lifetime. | 2014-06-12 |
20140159007 | ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, DISPLAY DEVICE - Embodiments of the invention disclose an array substrate and a fabrication method thereof, and a display device. The array substrate comprises a plurality of pixel units disposed on a base substrate. Each pixel unit comprises a thin-film transistor region and a display region. A thin-film transistor structure is formed in the thin-film transistor region, and an organic light-emitting diode. The organic light-emitting diode comprises a transparent first electrode, a light-emitting layer, and a second electrode for reflecting light that are sequentially formed. A transflective layer is formed in the display region. A color filter film is formed in the display region and is disposed between the second electrode of the organic light-emitting diode and the transflective layer. The second electrode of the organic light-emitting diode and the transflective layer form a microcavity structure. The color filter films in the pixel units of different colors have different thicknesses. | 2014-06-12 |
20140159008 | DOUBLE GATE TYPE THIN FILM TRANSISTOR AND ORGANIC LIGHT EMITTING DIODE DISPLAY INCLUDING THE SAME - A double gate type thin film transistor includes a first electrode on a substrate; a gate insulating layer on the first gate electrode; a semiconductor layer on the gate insulating layer corresponding to the first gate electrode; an etch stop layer on the semiconductor layer; source and drain electrodes contacting both sides of the semiconductor layer, respectively, and spaced apart from each other on the etch stop layer; a passivation layer on the source and drain electrode; and a second gate electrode on the passivation layer and having a double-layered structure of a transparent electrode and an opaque electrode. | 2014-06-12 |
20140159009 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND DISPLAY DEVICE - Embodiments of the present invention provide an array substrate, a manufacturing method thereof and a display device. The array substrate comprises a plurality of pixel units disposed on a substrate, each pixel unit including a thin-film transistor (TFT) structure and an organic light-emitting diode (OLED) driven by the TFT structure. The OLED includes a transparent first electrode, an emission layer and a second electrode for reflecting light in sequence in a direction away from the substrate. A color filter disposed between a layer provided with the OLED and a layer provided with the TFT structure. A transflective layer disposed between the OLED and the color filter. The second electrode of the OLED and the transflective layer constitute a microcavity structure. | 2014-06-12 |
20140159010 | ARRAY SUBSTRATE, MANUFACTURING METHOD THEREOF AND OLED DISPLAY DEVICE - An array substrate, a manufacturing method thereof and an OLED display device are provided. The array substrate comprises a plurality of pixel units disposed on a substrate, wherein each pixel unit includes a TFT structure formed on the substrate and an OLED driven by the TFT structure; the TFT structure includes a drive TFT. A drain electrode of the drive TFT is connected with the OLED; a gate electrode and the drain electrode of the drive TFT are at least partially overlapped to form a storage capacitor. A recess is formed in an insulating layer interposed between the gate electrode and the drain electrode corresponding to the overlapped area, so that the distance between the gate electrode and the drain electrode is less than the thickness of the insulating layer corresponding to the non-overlapped area. | 2014-06-12 |
20140159011 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - Provided is a light-emitting element which has high emission efficiency and a long lifetime and is driven at low voltage. The light-emitting element includes an EL layer between a pair of electrodes. The EL layer includes a compound which gives a first peak at a m/z of around 266.10 in a mass spectrum. | 2014-06-12 |
20140159012 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, DISPLAY DEVICE - Embodiments of the present invention disclose an array substrate comprising a plurality of pixel units disposed on a base substrate, the pixel units comprising: a thin film transistor structure formed on the base substrate; and an OLED driven by the thin film transistor structure, the OLED disposed in a pixel region of the pixel units, the OLED comprising sequentially in a direction away from the base substrate a first electrode which is transparent, a light-emitting layer and a second electrode which reflects light; a transflective layer disposed between the OLED and the thin film transistor structure; a color filter disposed between the second electrode of the OLED and the transflective layer; the second electrode of the OLED and the transflective layer constitute a microcavity structure. | 2014-06-12 |
20140159013 | PROCESS FOR THE MANUFACTURE OF A MULTILAYER STRUCTURE - A process for the manufacture of a multilayer structure suitable for forming part of an organic electronic device having a cathode and an anode wherein liquid compositions with solvent systems comprising organic compounds with ionizable groups are deposited out of solution. | 2014-06-12 |
20140159014 | CROSSLINKABLE COMPOUND, METHOD FOR PREPARING THE SAME AND LIGHT EMITTING DEVICE COMPRISING THE SAME - A crosslinkable compound comprising trifluorovinyl has a structure of Formula (I). A method for preparing the crosslinkable compound and a light emitting device prepared from the compound are also disclosed. | 2014-06-12 |
20140159015 | ORGANIC LIGHT EMITTING HOST MATERIALS - Heteroaryl-aryl compounds such as compounds represented by Formula may be used in electronic devices such as organic light-emitting devices. For example, the compounds may be used as an emissive material in an emissive layer. | 2014-06-12 |
20140159016 | ARRAY SUBSTRATE AND FABRICATION METHOD THEREOF, DISPLAY DEVICE - Embodiments of the invention disclose an array substrate and a fabrication method thereof, and a display device. The array substrate comprises a plurality of pixel units disposed on a base substrate, and the pixel unit comprises a thin-film transistor structure region and a display region other than the thin-film transistor structure region. A thin-film transistor structure is formed in the thin-film transistor structure region, an organic light-emitting diode is formed in the display region, and the thin-film transistor structure is configured to drive the organic light-emitting diode. A light-shielding layer is formed above the thin-film transistor structure in the thin-film transistor structure region, and the light-shielding layer is configured to block a blue light from entering the thin-film transistor structure. | 2014-06-12 |
20140159017 | Light-Emitting Device and Method for Manufacturing the Same - A light-emitting device with high reliability is provided. A light-emitting device includes a substrate | 2014-06-12 |
20140159018 | ARRAY SUBSTRATE, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - Embodiments of the present invention disclose an array substrate comprising a base substrate and a plurality of pixel units disposed on the base substrate, the pixel unit comprising a transflective layer formed on the base substrate; a thin film transistor structure formed over the transflective layer; an organic light-emitting diode disposed in a pixel region of the pixel unit and driven by the thin film transistor structure, and in a direction away from the base substrate, the organic light-emitting diode sequentially comprising a first electrode that is transparent, an organic light-emitting layer and a second electrode for reflecting light; and a color filter, disposed between the second electrode of the organic light-emitting diode and the transflective layer; wherein the second electrode of the organic light-emitting diode and the transflective layer constitute a microcavity structure. Embodiments of the present invention also disclose a method for manufacturing the array substrate and a display device including the above array substrate. | 2014-06-12 |
20140159019 | ORGANIC LIGHT EMITTING DIODE DISPLAY HAVING HIGH LUMINESCENCE - The present disclosure relates to an organic light emitting diode display having high luminescence. The present disclosure suggests an organic light emitting diode display comprising: a data line, a scan line and a driving current line defining a pixel area on a substrate; an anode electrode formed within the pixel area; an additional capacitance formed by overlapping expanded portions of the anode electrode with some portions of the driving current line; a bank defining a light emitting area in the anode electrode; an organic emission layer formed on the anode electrode; and a cathode electrode formed on the organic emission layer. The present disclosure suggests high luminescence organic light emitting diode display by including an additional capacitance for increasing the anode capacitance. | 2014-06-12 |
20140159020 | ARRAY SUBSTRATE AND MANUFACTURING METHOD THEREOF - Embodiments of the present invention disclose a method for manufacturing an array substrate comprising: forming patterns of a thin film transistor structure and a passivation layer on a base substrate to define a plurality of pixel units on the base substrate; forming subsequently patterns of a transflective layer and a color filter in a pixel region of the pixel unit, the color filter being disposed above the transflective layer; forming an organic light-emitting diode in the pixel region of the pixel unit so that the transflective layer and the color filter are disposed between the organic light-emitting diode and the thin film transistor structure. Embodiments of the present invention also provide an array substrate. | 2014-06-12 |
20140159021 | ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND OLED DISPLAY DEVICE - This invention provides an array substrate, a method for fabricating the same, and an OLED display device. Each pixel unit of the array substrate comprises: a TFT drive layer; an OLED further away from the substrate than the TFT drive layer and driven by it, the OLED sequentially comprises a first electrode, a light emitting layer, a second electrode, wherein the first electrode is transparent, and the second electrode is a transflective layer, or the second electrode is transparent and has a transflective layer disposed thereon; a reflection layer disposed between the TFT drive layer and the OLED and forming a microcavity structure with the transflective layer, and a reflective surface of the reflection layer has a concave-convex or corrugated structure disposed thereon for causing diffuse reflection of light; and a color filter film disposed between the reflection layer and the OLED and located in the microcavity structure. | 2014-06-12 |
20140159022 | ARRAY SUBSTRATE, METHOD FOR FABRICATING THE SAME, AND OLED DISPLAY DEVICE - This invention provides an array substrate, a method for fabricating the same, and an OLED display device, which can solve the technical problem that the existing OLED display device has low luminous efficiency. Each pixel unit of the array substrate comprises: a TFT drive layer; an OLED further away from the substrate than the TFT drive layer and driven by it, the OLED sequentially comprises a first electrode, a light emitting layer, and a transparent second electrode, wherein the first electrode is a reflection layer, or the first electrode is transparent and has a reflection layer disposed thereunder; a transflective layer further away from the substrate than the OLED and forming a microcavity structure with the reflection layer; and a color filter film disposed between the OLED and the transflective layer and located in the microcavity structure. The present invention is particularly suitable for a WOLED display device. | 2014-06-12 |
20140159023 | ORGANIC EL MULTI-COLOR LIGHT-EMITTING DEVICE - An organic EL multi-color emitting device including a substrate, and a first light-emitting element and a second light-emitting element arranged on the surface of the substrate; the first light-emitting element including, between an anode and a cathode, a first organic layer, a second organic layer and a third organic layer in this sequence in a direction perpendicular to the surface of the substrate; the second light-emitting element including, between an anode and a cathode, a second organic layer and a third organic layer in this sequence in a direction perpendicular to the surface of the substrate; the first organic layer including a first light-emitting dopant; the third organic layer including a second light-emitting dopant; the second organic layer including any of (A) a compound including an arylamine site, and a furan site or a thiophene site, (B) a compound including an arylamine site and a site comprising a nitrogen-containing six-membered ring structure, (C) a compound including a carbazole site, and a furan site or a thiophene site, and (D) a compound including a carbazole site and a site including a nitrogen-containing six-membered ring structure. | 2014-06-12 |
20140159024 | Organic Electric-Field Light-Emitting Element, Light-Emitting Material For Organic Electric-Field Light-Emitting Element, And Light-Emitting Device, Display Device, And Illumination Device Using Same Element - An organic electroluminescent element that uses a compound expressed by the following general formula emits dark blue light and exhibits little change in chromaticity during brightness modulation. (n1 is an integer from 0 to 8; the R | 2014-06-12 |
20140159025 | MESOPOROUS SILICA PARTICLES, METHOD FOR PRODUCING MESOPOROUS SILICA PARTICLES, MESOPOROUS SILICA PARTICLE-CONTAINING COMPOSITION, MESOPOROUS SILICA PARTICLE-CONTAINING MOLDED ARTICLE, AND ORGANIC ELECTROLUMINESCENCE DEVICE - The mesoporous silica particles of the present invention each include an inner portion having first mesopores and an outer peripheral portion covering the inner portion. The outer peripheral portion includes an organosilica coating portion made of organosilica. The organosilica includes a bridged-type organosilica in which two silicon atoms in a silica framework are bridged by an organic group. | 2014-06-12 |
20140159026 | THIN-FILM TRANSISTOR, DISPLAY PANEL, AND METHOD FOR PRODUCING A THIN-FILM TRANSISTOR - A thin-film transistor including: a gate electrode that is located above a substrate; a gate insulating layer that faces the gate electrode; a partition that defines an opening and has higher liquid repellency than liquid repellency of the gate insulating layer, the opening having a surface of the gate insulating layer therewithin; a semiconductor layer that faces the gate electrode with the gate insulating layer interposed therebetween and is formed within the opening by an application method; a source electrode and a drain electrode that are electrically connected to the semiconductor layer; and an intermediate layer that is made of the same material as a material of the partition and is located between the gate insulating layer and the semiconductor layer, wherein the intermediate layer is discretely present above the gate insulating layer. | 2014-06-12 |
20140159027 | Host Material for Blue Phosphor, and Organic Thin Film and Organic Light-Emitting Device Including Same - Provided are a host material for a blue phosphor, and an organic thin film and an organic light-emitting device including the same. The host material for a blue phosphor is such that a carbazole compound is bonded around a central atom, wherein the central atom is a Group 14 element, and the carbazole compound bonded around the central atom is 3 or 4, wherein the carbazole compound includes carbazole in which an alkyl group is substituted. The host material for a blue phosphor has high triplet energy (ET) and excellent electrical mobility and thermal stability. As a result, the organic thin film, which includes the host material, and the organic light-emitting device, which includes the organic thin film, implement a deep blue color and have excellent luminous efficiency. | 2014-06-12 |
20140159028 | HETEROLEPTIC IRIDIUM COMPLEXES AS DOPANTS - Novel phosphorescent heteroleptic iridium complexes with phenylpyridine and dibenzo-containing ligands are provided. Alkyl substitution at specific positions on the ligands gives rise to compounds with improved OLED properties, including saturated green emission. | 2014-06-12 |
20140159029 | ORGANIC ELECTROLUMINESCENT LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - According to one embodiment, an organic electroluminescent light emitting device includes a transparent substrate, an intermediate layer, a first electrode, an organic light emitting layer, and a second electrode. The intermediate layer includes a plurality of fine particles and a flattened layer. The fine particles are adhered to a major surface of the transparent substrate. The flattened layer covers the fine particles and has a refractive index different from a refractive index of the fine particles. The flattened layer is transparent. The first electrode is provided on the intermediate layer. The first electrode is transparent. The organic light emitting layer is provided on the first electrode. The second electrode is provided on the organic light emitting layer. | 2014-06-12 |
20140159030 | PROCESS FOR PREPARING NANOPARTICLE EMBEDDED ELECTRONIC DEVICE - The present invention relates to a process for preparing an electronic device comprising at least one layer selected from the group consisting of a upper electrode layer, a lower electrode layer, an organic layer and an inorganic layer, which comprises a step of introducing a nanoparticle layer or a nano/micro structure layer by adhering charged nanoparticles, before, after or during forming the layer. | 2014-06-12 |
20140159031 | ORGANIC LIGHT-EMITTING ELEMENT - The present invention provides an organic light-emitting element with improved chemical stability at the interface between the light-emitting layer and the electron transport layer, which maintains excellent, stable luminous efficiency for a long period. For this purpose, one aspect of the present invention is an organic EL element having a substrate, and a hole injection layer, a buffer layer, a light-emitting layer, a regulation layer, an electron transport layer and a cathode which are sequentially layered on one side of the substrate. The regulation layer is made of NaF, which is not chemically reactive with the light-emitting layer or the electron transport layer, and the electron transport layer is made of a CT complex using a host material and an n-type dopant, which are both organic materials. | 2014-06-12 |
20140159032 | TRANSITIONED FILM GROWTH FOR CONDUCTIVE SEMICONDUCTOR MATERIALS - A center region of conductive material/s may be disposed or “sandwiched” between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in turn be disposed or sandwiched between dielectric insulative material to form a sandwiched and transitioned device structure. The center region of such a sandwiched structure may be implemented, for example, as a device layer such as conductive microbolometer layer for a microbolometer detector structure. | 2014-06-12 |
20140159033 | ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - An array substrate includes a substrate; an oxide semiconductor layer on the substrate, the oxide semiconductor layer including an active area and source and drain areas at both sides of the active area; a gate insulating layer and a gate electrode sequentially on the active area of the oxide semiconductor layer; an inter insulating layer on the gate electrode and having first and second semiconductor contact holes that expose the source and drain areas respectively; and source and drain electrodes on the inter insulating layer and contacting the source and drain areas through the first and second semiconductor contact holes, respectively, wherein the first and second semiconductor contact holes are disposed in two regions. | 2014-06-12 |
20140159034 | ARRAY SUBSTRATE AND METHOD OF FABRICATING THE SAME - An array substrate includes an oxide semiconductor layer; an etch stopper including a first contact hole exposing each of both sides of the oxide semiconductor layer; source and drain electrodes spaced apart from each other with the oxide semiconductor layer therebetween; a first passivation layer including a contact hole exposing each of both ends of the oxide semiconductor layer and each of ends of the source and drain electrode that oppose the both ends of the oxide semiconductor layer, respectively; and a connection pattern at the second contact hole contacting both the oxide semiconductor layer and each of the source and drain electrodes. | 2014-06-12 |
20140159035 | TRANSISTORS, METHODS OF MANUFACTURING TRANSISTORS, AND ELECTRONIC DEVICES INCLUDING TRANSISTORS - According to example embodiments, a transistor may include a gate electrode, a gate insulating layer, and a channel layer stacked on each other; and a source electrode and a drain electrode contacting first and second regions of the channel layer, respectively. The channel layer may include metal oxynitride. The first and second regions of the channel layer may be treated with a plasma containing hydrogen, and the first and second regions have a higher carrier concentration than a carrier concentration of a remaining region of the channel layer. The first and second regions of the channel layer may have a lower oxygen concentration and a higher nitrogen concentration than that of the remaining region thereof. The metal oxynitride of the channel layer may include a zinc oxynitride (ZnON)-based semiconductor. | 2014-06-12 |
20140159036 | OXIDE TRANSISTOR WITH NANO-LAYERED STRUCTURE AND METHOD OF FABRICATING THE SAME - According to example embodiments of the inventive concept, provided is a transistor with a nano-layered oxide semiconductor layer. The oxide semiconductor layer may include at least one first nano layer and at least one second nano layer that are alternatingly stacked one on another. Here, the first nano layer and the second nano layer may include different materials from each other, and thus, a channel with high electron mobility may be formed at the interface between the first and second nano layers. Accordingly, the transistor can have high reliability. | 2014-06-12 |
20140159037 | THIN FILM TRANSISTOR, METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE COMPRISING THE SAME - A thin film transistor, a method of manufacturing the thin film transistor, and a display device including the thin film transistor are provided. The thin film transistor comprises an oxide semiconductor layer, a gate electrode, a source electrode and a drain electrode formed on a substrate in a coplanar configuration. A first conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the source electrode. A second conductive member is in direct contact with the oxide semiconductor layer and in direct contact with the drain electrode. The first conductive member and the second conductive member are arranged to decrease resistance between a channel region of the oxide semiconductor layer and the source and drain electrodes. | 2014-06-12 |
20140159038 | COMPLEMENTARY METAL OXIDE SEMICONDUCTOR CIRCUIT STRUCTURE, PREPARATION METHOD THEREOF AND DISPLAY DEVICE - Provided are a CMOS circuit structure, a preparation method thereof and a display device, wherein a PMOS region in the CMOS circuit structure is of a LTPS TFT structure, that is, the PMOS semiconductor layer is prepared from a P type doped polysilicon material; an NMOS region is of an Oxide TFT structure, that is, the NMOS semiconductor layer is made of an oxide material; three doping processes applied to the NMOS region during the LTPS process may be omitted in the case in which the NMOS semiconductor layer in the NMOS region is made of an oxide material instead of the polysilicon material, which may simplify the preparation of the CMOS circuit structure as well as reduce a production cost. Furthermore, it is only required to crystallizing the PMOS semiconductor layer, which may also extend the lifespan of laser tube, contributing to reduction of the production cost. | 2014-06-12 |
20140159039 | THIN FILM TRANSISTOR WITH TWO-DIMENSIONAL DOPING ARRAY - A thin film transistor includes: a source region; a drain region; and a polycrystalline thin film active channel region connected to the source region and the drain region, the active channel region comprising grains and being doped with a two-dimensional pattern comprising a plurality of doped regions, the plurality of doped regions each comprising at least portions of a plurality of the grains and at least one grain boundary. | 2014-06-12 |
20140159040 | AUTHENTICATION USING GRAPHENE BASED DEVICES AS PHYSICAL UNCLONABLE FUNCTIONS - The present disclosure relates to secure devices having a physical unclonable function and methods of manufacturing such secure devices. One device includes at least one graphene layer representing a physical unclonable function and a measurement circuit for measuring at least one property of the at least one graphene layer. Another device includes at least a first graphene layer and a second graphene layer representing a physical unclonable function, where one of the graphene layers has been subjected to a variability enhancement such that a measurable property is different for each of the layers. A method includes providing a substrate for a secure device and providing at least one graphene layer on the substrate, the at least one graphene layer representing a physical unclonable function. The providing of the at least one graphene layer includes applying at least one variability enhancement to the at least one graphene layer. | 2014-06-12 |
20140159041 | SEMICONDUCTOR DEVICE - A semiconductor device includes: a first circuit block formed on a first semiconductor substrate having first and second sides extending in a first direction and third and fourth sides extending in a second direction intersecting with the first direction; a plurality of signal-line through vias that are connected to the first semiconductor substrate and transmit signals, which are output from the first circuit block, to a second circuit block formed on another second semiconductor substrate; and a plurality of power-supply through vias for supplying power to the first circuit block, and in the semiconductor device, the plurality of power-supply through vias are formed at edges of the first semiconductor substrate along the third and fourth sides and are formed in a plurality of rows in the first direction. Each circuit block has a power consuming mode in which power larger than the power consumption in a normal mode is consumed. | 2014-06-12 |
20140159042 | TOP DOWN ALUMINUM INDUCED CRYSTALLIZATION FOR HIGH EFFICIENCY PHOTOVOLTAICS - Certain aspects of the present disclosure are directed to a method that includes: depositing, in a deposition environment, an amorphous semiconductor material on a substrate to form a semiconductor film on the substrate; filling, in the depositing process, the deposition environment with a first precursor material such that the semiconductor film formed on the substrate includes a first layer having a first material characteristic; filling, in the depositing process, the deposition environment with a crystallization-stop precursor material such that the silicon film includes a crystallization-stop layer having a crystallization characteristic different from a crystallization characteristic of the first layer; depositing a metal film on the semiconductor film; and annealing the semiconductor film and the metal film at an predetermined annealing temperature for a predetermined period of time such that the first layer is at least partially crystallized and the crystallization-stop layer is at least partially amorphous. | 2014-06-12 |
20140159043 | ACTIVE MATRIX DISPLAY PANEL WITH GROUND TIE LINES - A display panel and a method of forming a display panel are described. The display panel may include a thin film transistor substrate including a pixel area and a non-pixel area. The pixel area includes an array of bank openings and an array of bottom electrodes within the array of bank openings. A ground line is located in the non-pixel area and an array of ground tie lines run between the bank openings in the pixel area and are electrically connected to the ground line in the non-pixel area. | 2014-06-12 |
20140159044 | THIN-FILM TRANSISTOR AND METHOD FOR MANUFACTURING THIN-FILM TRANSISTOR - A method for manufacturing a thin-film transistor, includes: preparing a substrate; forming a gate electrode above the substrate; forming a gate insulating layer above the gate electrode; forming a semiconductor film above the gate insulating layer; forming, above the semiconductor film, a protective layer comprising an organic material; forming a source electrode and a drain electrode above the protective layer; forming a semiconductor layer patterned, by performing dry etching on the semiconductor film; removing at least a portion of a region of an altered layer, the region contacting the semiconductor layer, the altered layer being a surface layer of the protective layer that is altered by the dry etching; and forming a passivation layer having a major component identical to a major component of the protective layer so as to contact the semiconductor layer in a region in which the altered layer has been removed. | 2014-06-12 |
20140159045 | SEMICONDUCTOR DEVICE - There is provided a semiconductor device in which fabrication steps can be reduced by constructing a circuit using only TFTs of one conductivity type and in which a voltage amplitude of an output signal can be normally obtained. A capacitance ( | 2014-06-12 |
20140159046 | FLEXIBLE DISPLAY SUBSTRATE, THE MANUFACTURING METHOD THEREOF AND A FLEXIBLE DISPLAY DEVICE - The present invention provides a flexible display substrate, the manufacturing method thereof and a flexible display device, relates to the field of flexible display technology, and can solve the technical problems that the existing flexible display substrate is easy to be damaged during deforming, has small amount of deformation, degraded display performance or high costs, or has difficulty in manufacturing process. The flexible display substrate according to the present invention comprising a hard material layer disposed at the fragile positions of the flexible display substrate. The manufacturing method for the flexible display substrate according to the present invention comprises forming a pattern of a hard material layer. The flexible display device of the present invention comprises the flexible display substrate mentioned above. The present invention is applicable to flexible display devices such as flexible organic electroluminescent display device, flexible electrophoretic display device, or liquid crystal display device. | 2014-06-12 |
20140159047 | MANUFACTURING PROCESS OF OXIDE INSULATING LAYER AND FLEXIBLE STRUCTURE OF LTPS-TFT (LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM TRANSISTOR) DISPLAY - The present invention provides a manufacturing process of oxide insulating layer and flexible structure of LTPS-TFT display. The manufacturing process firstly provides a substrate, which is a soft material sheet; and then an a-Si layer is formed on the substrate, and oxygen ion implantation process of a certain depth is conducted onto the a-Si layer; finally, ELA process is conducted to transform a-Si layer into a Poly-Si layer and an oxide insulating layer; of which the oxide insulating layer is a silica insulating layer and located within the Poly-Si layer for subsequently producing LTPS-TFT; the structure comprises of a substrate, Poly-Si layer and oxide insulating layer within the Poly-Si layer. | 2014-06-12 |
20140159048 | High Electron Mobility Transistor and Manufacturing Method Thereof - The present invention discloses a high electron mobility transistor (HEMT) and a manufacturing method thereof. The HEMT device includes: a substrate, a first gallium nitride (GaN) layer; a P-type GaN layer, a second GaN layer, a barrier layer, a gate, a source, and a drain. The first GaN layer is formed on the substrate, and has a stepped contour from a cross-section view. The P-type GaN layer is formed on an upper step surface of the stepped contour, and has a vertical sidewall. The second GaN layer is formed on the P-type GaN layer. The barrier layer is formed on the second GaN layer. two dimensional electron gas regions are formed at junctions between the barrier layer and the first and second GaN layers. The gate is formed on an outer side of the vertical sidewall. | 2014-06-12 |
20140159049 | SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a semiconductor device includes forming devices including source, drain and gate electrodes on a front surface of a substrate including a bulk silicon, a buried oxide layer, an active silicon, a gallium nitride layer, and an aluminum-gallium nitride layer sequentially stacked, etching a back surface of the substrate to form a via-hole penetrating the substrate and exposing a bottom surface of the source electrode, conformally forming a ground interconnection on the back surface of the substrate having the via-hole, forming a protecting layer on the front surface of the substrate, and cutting the substrate to separate the devices from each other. | 2014-06-12 |
20140159050 | FIELD EFFECT TRANSISTOR AND METHOD OF FABRICATING THE SAME - A field effect transistor is provided. The field effect transistor may include a capping layer on a substrate, a source ohmic electrode and a drain ohmic electrode on the capping layer, a first insulating layer and a second insulating layer stacked on the capping layer to cover the source and drain ohmic electrodes, a Γ-shaped gate electrode including a leg portion and a head portion, the leg portion being connected to the substrate between the source ohmic electrode and the drain ohmic electrode, and the head portion extending from the leg portion to cover a top surface of the second insulating layer, a first planarization layer on the second insulating layer to cover the Γ-shaped gate electrode, and a first electrode on the first planarization layer, the first electrode being connected to the source ohmic electrode or the drain ohmic electrode. | 2014-06-12 |
20140159051 | MONOLITHICALLY INTEGRATED VERTICAL JFET AND SCHOTTKY DIODE - An integrated device including a vertical III-nitride FET and a Schottky diode includes a drain comprising a first III-nitride material, a drift region comprising a second III-nitride material coupled to the drain and disposed adjacent to the drain along a vertical direction, and a channel region comprising a third III-nitride material coupled to the drift region. The integrated device also includes a gate region at least partially surrounding the channel region, a source coupled to the channel region, and a Schottky contact coupled to the drift region. The channel region is disposed between the drain and the source along the vertical direction such that current flow during operation of the vertical III-nitride FET and the Schottky diode is along the vertical direction. | 2014-06-12 |
20140159052 | METHOD AND STRUCTURE FOR TRANSISTOR WITH REDUCED DRAIN-INDUCED BARRIER LOWERING AND ON RESISTANCE - Embodiments of the invention provide an improved method and structure for a transistor with reduced DIBL and R | 2014-06-12 |
20140159053 | SIC TRENCH GATE TRANSISTOR WITH SEGMENTED FIELD SHIELDING REGION AND METHOD OF FABRICATING THE SAME - A SiC trench gate transistor with segmented field shielding region is provided. A drain region of a first conductivity type is located in a substrate. A first drift layer of the first conductivity type is located on the substrate and a second drift layer of the first conductivity type is located on the first drift layer. A base region of a second conductivity type is located on the second drift layer. A gate trench is located between the adjacent base regions. A plurality of segmented field shielding regions of the second conductivity type is placed under a bottom of the gate trench and the space between segmented field shielding regions is the first drift region. A gate dielectric layer is located on a bottom and at a sidewall of the gate trench and a trench gate is formed in the gate trench. | 2014-06-12 |
20140159054 | POWER MODULE SEMICONDUCTOR DEVICE - There is provided a power module semiconductor device allowing reduction in size and weight of a thin type SiC power module. The power module semiconductor device ( | 2014-06-12 |
20140159055 | SUBSTRATES FOR SEMICONDUCTOR DEVICES - A method of manufacturing a composite substrate for a semiconductor device, the method comprising:
| 2014-06-12 |
20140159056 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device includes a substrate made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to 65° with respect to a surface orientation of {0001}, a p-type layer serving as a semiconductor layer, and an oxide film serving as an insulating film. The p-type layer is formed on the substrate and is made of silicon carbide. The oxide film is formed to contact with a surface of the p-type layer. A maximum value of the concentration of nitrogen atoms in a region within 10 nm of an interface between the semiconductor layer and the insulating film (interface between a channel region and the oxide film) is greater than or equal to 1×10 | 2014-06-12 |
20140159057 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - There is provided a silicon carbide semiconductor device having excellent electrical characteristics such as channel mobility, and a method for manufacturing the same. A semiconductor device includes a substrate made of silicon carbide and having an off-angle of greater than or equal to 50° and less than or equal to 65° with respect to a surface orientation of {0001}, a p-type layer serving as a semiconductor layer, and an oxide film serving as an insulating film. The p-type layer is formed on the substrate and is made of silicon carbide. The oxide film is formed to contact with a surface of the p-type layer. A maximum value of the concentration of nitrogen atoms in a region within 10 nm of an interface between the semiconductor layer and the insulating film (interface between a channel region and the oxide film) is greater than or equal to 1×10 | 2014-06-12 |
20140159058 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SILICON CARBIDE SEMICONDUCTOR DEVICE - In a silicon carbide semiconductor device, a trench penetrates a source region and a first gate region and reaches a drift layer. On an inner wall of the trench, a channel layer of a first conductivity-type is formed by epitaxial growth. On the channel layer, a second gate region of a second conductivity-type is formed. A first depressed portion is formed at an end portion of the trench to a position deeper than a thickness of the source region so as to remove the source region at the end portion of the trench. A corner portion of the first depressed portion is covered by a second conductivity-type layer. | 2014-06-12 |
20140159059 | DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A method of manufacturing a display substrate includes forming a gate insulation layer on the base substrate on which a gate metal pattern, forming a data metal pattern on the gate insulation layer, sequentially forming a insulation layer and an organic layer on the base substrate on which the data metal pattern is formed, partially exposing the organic layer, developing the organic layer to partially remove the organic layer on the data metal pattern and to expose at least a portion of the protecting layer on the gate metal pattern, forming a common electrode on the organic layer, forming a pixel electrode on the on the organic layer, and forming an insulation layer between the pixel electrode and the common electrode. An etching degree of a data metal may be controlled by controlling a thickness of a remained organic layer to reduce a damage of the data metal. | 2014-06-12 |
20140159060 | PATTERNED SUBSTRATE AND ELECTRO-OPTICAL SEMICONDUCTOR ELEMENT - A patterned substrate includes a substrate body and a plurality of solid patterns. The solid patterns are set on the substrate body, and at least partial pitches between the solid patterns are different. | 2014-06-12 |
20140159061 | PROTECTION ELEMENT AND LIGHT EMITTING DEVICE USING SAME - A protective element includes a semiconductor substrate, connecting electrodes, bottom electrodes, and a protection circuit. The connecting electrodes are provided on a mount surface of the semiconductor substrate on which a light-emitting element for flip-chip mounting is mounted so as to be each connected to an electrode of the light-emitting element. The protection circuit is provided in the semiconductor substrate so as to be connected through the connecting electrodes to the light-emitting element. The bottom electrodes are provided on a surface of the semiconductor substrate opposite to the mount surface, are each connected to a corresponding one of the connecting electrodes, and are configured so as to be each connected to an electrode on the mounting base. | 2014-06-12 |
20140159062 | OPTICAL COUPLING DEVICE - A optical coupling device includes a first lead frame; a light emitting device installed on the first lead frame; a light receiving device configured to receive an optical signal outputted from the light emitting device; a translucent silicon-based resin layer which covers the light emitting device; and a conductive wire connecting the first lead frame and the light emitting device. The conductive wire is formed of a material which contains silver. | 2014-06-12 |
20140159063 | VERTICAL SOLID-STATE TRANSDUCERS AND HIGH VOLTAGE SOLID-STATE TRANSDUCERS HAVING BURIED CONTACTS AND ASSOCIATED SYSTEMS AND METHODS - Solid-state transducers (“SSTs”) and vertical high voltage SSTs having buried contacts are disclosed herein. An SST die in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the transducer structure, and a second semiconductor material at a second side of the transducer structure. The SST can further include a plurality of first contacts at the first side and electrically coupled to the first semiconductor material, and a plurality of second contacts extending from the first side to the second semiconductor material and electrically coupled to the second semiconductor material. An interconnect can be formed between at least one first contact and one second contact. The interconnects can be covered with a plurality of package materials. | 2014-06-12 |
20140159064 | LIGHT EMITTING DEVICE REFLECTIVE BANK STRUCTURE - Reflective bank structures for light emitting devices are described. The reflective bank structure may include a substrate, an insulating layer on the substrate, and an array of bank openings in the insulating layer with each bank opening including a bottom surface and sidewalls. A reflective layer spans sidewalls of each of the bank openings in the insulating layer. | 2014-06-12 |
20140159065 | STABILIZATION STRUCTURE INCLUDING SACRIFICIAL RELEASE LAYER AND STAGING CAVITY - A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is held within an array of staging cavities on a carrier substrate. Each micro device is laterally surrounded by sidewalls of a corresponding staging cavity. | 2014-06-12 |
20140159066 | STABILIZATION STRUCTURE INCLUDING SACRIFICIAL RELEASE LAYER AND STAGING BOLLARDS - A method and structure for stabilizing an array of micro devices is disclosed. The array of micro devices is within an array of staging cavities on a carrier substrate. Each micro device is laterally retained between a plurality of staging bollards of a corresponding staging cavity. | 2014-06-12 |
20140159067 | ACTIVE MATRIX EMISSIVE MICRO LED DISPLAY - A display panel and a method of forming a display panel are described. The display panel may include a thin film transistor substrate including a pixel area and a non-pixel area. The pixel area includes an array of bank openings and an array of bottom electrodes within the array of bank openings. An array of micro LED devices are bonded to the corresponding array of bottom electrodes within the array of bank openings. An array of top electrode layers are formed electrically connecting the array of micro LED devices to a ground line in the non-pixel area. | 2014-06-12 |
20140159068 | DISPLAY DEVICE - A display device includes: a substrate; a signal line on the substrate; a signal input line on the substrate and connected to a driver; a first insulating layer between the signal line and the signal input line; a second insulating layer on the signal line, the signal input line and the first insulating layer; an organic layer on the second insulating layer; a first contact hole defined in the organic layer, the first insulating layer and the second insulating layer and exposing the signal line; a second contact hole defined in the organic layer and the second insulating layer and exposing the signal input line; and a connecting member on the organic layer, and connecting the signal line and the signal input line to each other through the first contact hole and the second contact hole, respectively. | 2014-06-12 |
20140159069 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - A light emitting device includes a light source module and a secondary optical element. The optical element includes a light incident surface and a light radiating surface opposite to the light incident surface. The light source module includes at least one light emitting unit, and the light emitting unit includes a light emitting diode (LED) chip and an encapsulation layer. The encapsulation layer includes a light outputting surface. The light incident surface faces to the light outputting surface. A gap is defined between the light outputting surface and the light incident surface, and a transparent colloid is filled in the gap. The transparent colloid has a refractive index similar to that of the second optical element and the encapsulation layer. A method for manufacturing the light emitting device is also provided. | 2014-06-12 |
20140159070 | ARRAY SUBSTRATE AND DISPLAY DEVICE - An array substrate includes a first electrode located above a switching element through a first insulating film, a second electrode located above the first electrode through a second insulating film, and a connection portion that is located to pass through the first insulating film, first electrode, and second insulating film and electrically connects a drain electrode of the switching element and the second electrode. The connection portion is disposed in an avoidance region provided by carving out a gate line connected to the switching element. | 2014-06-12 |
20140159071 | LIGHT EMITTING DEVICE - A light emitting device includes a substrate, light emitting cells, each of the light emitting cells including a light emitting structure including lower and upper semiconductor layers, an upper electrode, and a lower electrode, a conductive interconnection layer electrically connecting a lower electrode of a first one of the light emitting cells and an upper electrode of a second one of the light emitting cells, and a current blocking layer disposed to extend from between the upper electrode and the upper semiconductor layer, wherein each light emitting cell further includes a conductive layer arranged to electrically connect the upper electrode of the second light emitting cell to the upper semiconductor layer of the second light emitting cell. | 2014-06-12 |
20140159072 | LIGHT-EMITTING DEVICE, LIGHT-EMITTING DEVICE ASSEMBLY, AND ELECTRODE-BEARING SUBSTRATE - A light-emitting device assembly includes a plurality of light-emitting devices, the plurality of light-emitting devices being provided continuously, the plurality of light-emitting devices each including a substrate, an optical semiconductor element mounted on the surface of the substrate, an encapsulating layer formed on the substrate surface to encapsulate the optical semiconductor element, and an electrode formed on the substrate surface so as to be electrically connected to the optical semiconductor element. The substrate has a fragile region formed to partition off the light-emitting devices that are disposed next to each other. | 2014-06-12 |
20140159073 | ARRAY SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME, AND DISPLAY DEVICE - The present invention provides an array substrate and a method for manufacturing the same, and a display device. Wherein, after forming a pattern corresponding to a source/drain electrode layer, a transparent conducting layer is formed, and then a passivation layer is formed on the transparent conducting layer. Because the transparent conducting layer has a characteristic of anti-etching, it is hard to be damaged, so that the problem of damage of copper in the source/drain electrode layer is solved without increasing the process steps for forming the array substrate. | 2014-06-12 |