22nd week of 2010 patent applcation highlights part 15 |
Patent application number | Title | Published |
20100133485 | PROCESS FOR PRODUCTION OF SILICON SINGLE CRYSTAL, AND SILICON SINGLE CRYSTAL SUBSTRATE - In growing a silicon monocrystal from a silicon melt added with an N-type dopant by Czochralski method, the monocrystal is grown such that a relationship represented by a formula (1) as follows is satisfied. In the formula (1): a dopant concentration in the silicon melt is represented by C (atoms/cm | 2010-06-03 |
20100133486 | COATED PARTICLE AND METHOD FOR PRODUCING THE SAME, ANISOTROPIC CONDUCTIVE ADHESIVE COMPOSITION USING COATED PARTICLE, AND ANISOTROPIC CONDUCTIVE ADHESIVE FILM - Disclosed is a coated particle ( | 2010-06-03 |
20100133487 | METHOD OF PRODUCING PRUSSIAN BLUE-TYPE METAL COMPLEX NANOPARTICLES, AND PRUSSIAN BLUE-TYPE METAL COMPLEX NANOPARTICLES OBTAINED BY THE METHOD, DISPERSION OF THE NANOPARTICLES, METHOD OF REGULATING THE COLOR OF THE NANOPARTICLES, AND ELECTRODE AND TRANSMITTED LIGHT-REGULATOR EACH USING THE NANOPARTICLES - To provide a method of producing Prussian blue-type metal complex nanoparticles without necessarily requiring complicated steps and an excessive amount of raw materials, but allowing one to obtain nanometer-size fine particles having desired fine particle properties, and Prussian blue-type metal complex nanoparticles obtained by the method, a dispersion of the nanoparticles, a method of regulating the color of the nanoparticles, and an electrode and a transmitted light-regulator each using the nanoparticles; Prussian blue-type metal complex nanoparticles are produced by: mixing an aqueous solution containing a metal cyano complex anion having predetermined metal atom M | 2010-06-03 |
20100133488 | MOLECULAR AND PHOTONIC NANOSTRUCTURES, OPTICAL BIOMATERIALS, PHOTO-SENSITIZERS, MOLECULAR CONTRAST AGENTS AND METAMATERIALS - The present invention generally relates to new photophysical characteristics associated with certain macromolecules, heterogeneous phases with a pronounced index of refraction contrast, and biological complex macromolecules. Given this, in one embodiment the present invention relates to new processes, methods and applications, for enhancing signals and images. In another embodiment, the present invention relates to the design and development of scalable imaging systems and techniques, optical instrumentation and lenses, systems engineering, photonics and optoelectronics, low-power microelectronics, micro-nanotechnology, and sensing/biosensing applications for various applications (e.g., life science applications). | 2010-06-03 |
20100133489 | Photoinduced phase separation of gold in two-component nanoparticles to form nanoprisms - Nanoprisms containing silver and gold are disclosed. The nanoprisms exhibit the properties of pure silver nanoprisms, but are less susceptible to silver modification or reaction by a surrounding environment than pure silver nanoprisms due to the presence of the gold. The gold surface of the nanoprisms can be further modified, using known gold-modification techniques. | 2010-06-03 |
20100133490 | BOOM MOUNTABLE ROBOTIC ARM - A boom mountable robotic arm for temporarily supporting an elongate conductor includes a rigid member such as a beam or beam assembly adapted for mounting onto the upper end of a boom for example using a boom adaptor, at least one electrically insulated support post mounted to the rigid member, where each post temporarily supports an elongate electrical conductor, and at least two rotation devices for selectively controllable rotation of the rigid member and the electrically insulated support posts about at least two corresponding axes of rotation. | 2010-06-03 |
20100133491 | SYSTEMS AND METHODS FOR CONTROLLING ROPE - A device for controlling movement of a rope comprises a main part and a bar part. The main part defines a central opening, first and second side portions, first and second end portions, at least one projection portion extending from each end portion, and a friction surface formed at junctures of each end portion and the at least one projection portion adjacent thereto. The bar part is movably attached to the first side portion. The bar part is displaced to allow a portion of the rope to be arranged within the central opening and at least partly around the bar part. The bar part is displaced such that the main part and the bar part define first and second opening portions of the central opening and the portion of the rope extends through the first and second opening portions and at least partly around the bar part. | 2010-06-03 |
20100133492 | Fencing system - A fencing system. Components may be joined in various combinations to create a limitless number of different configurations or arrangements. Stakes, posts, and chains may be attached to one another in multiple combinations. The posts are removably interchangeably inserted onto stakes set in the ground, thereby allowing each post to be rotated to any desired position. The stakes are first driven into the ground and the posts are then inserted into or onto a post-holder in the stake to provide support and stability for the fencing system. Chains are removably suspended between two selected posts. The chain may have post attachment collars with through bores, which are aligned, and the posts inserted therethrough into the post holding structure. Clamps attached below a lowermost post attachment collar suspend the chains to the posts. | 2010-06-03 |
20100133493 | FENCING SYSTEM AND POST INSERT FOR USE THEREWITH - A fencing system includes a post mount typically mountable on a foundation and having an outer surface extending upwardly therefrom. A post insert mounted adjacent the top of the post mount has an outer surface disposed outwardly of the post mount outer surface to abut an inner surface of a post which defines a cavity in which the post mount and post insert are slidably received. The post insert provides stability to the post such that a rail may be mounted on the post via a rail mounting bracket or otherwise. | 2010-06-03 |
20100133494 | USE OF LACUNAR SPINELS WITH TETRAHEDRAL AGGREGATES OF A TRANSITION ELEMENT OF THE AM4X8 TYPE WITH AN ELECTRONIC DATA REWRITABLE NON VOLATILE MEMORY, AND CORRESPONDING MATERIAL - The invention relates to the use of a material that belongs to the class of lacunar spinels with tetrahedral aggregates of an AM4X8 transition element as the active material for an electronic data non-volatile memory, in which: A comprises at least one of the following elements: Ga, Ge, Zn; M comprises at least one of the following elements: V, Nb, Ta, Mo; and X comprises at least one of the following elements: S, Se. | 2010-06-03 |
20100133495 | PHASE CHANGE MEMORY DEVICES AND METHODS FOR FABRICATING THE SAME - A phase change memory device is provided, including a substrate, a first dielectric layer disposed over the substrate, a first electrode disposed in the first dielectric layer, a second dielectric layer formed over the first dielectric layer, covering the first electrode, a heating electrode disposed in the second dielectric layer, contacting the first electrode, a phase change material layer disposed over the second dielectric layer, contacting the heating electrode, and a second electrode disposed over the phase change material layer. In one embodiment, the heating electrode includes a first portion contacting the first electrode and a second portion contacting the phase change material layer, and the second portion of the heating electrode includes metal silicides and the first portion of the heating electrode includes no metal silicides. | 2010-06-03 |
20100133496 | Resistive random access memory - A RRAM may include a first electrode, a second electrode, and a memory resistant layer between the first and second electrodes, wherein the memory resistant layer may include a transition metal oxide doped with a metal having a high oxygen affinity. Because a RRAM includes a memory resistant layer doped with a material having a high oxygen affinity, the RRAM may be stably driven at higher temperatures. | 2010-06-03 |
20100133497 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - The invention includes: multiple bit lines b | 2010-06-03 |
20100133498 | MEMORY DEVICE AND SEMICONDUCTOR DEVICE - A memory device has a pair of conductive layers and an organic compound having a liquid crystal property that is interposed between the pair of conductive layers. Data is recorded in the memory device by applying a first voltage to the pair of conductive layers and heating the organic compound, to cause a phase change of the organic compound from a first phase to a second phase. | 2010-06-03 |
20100133499 | RESISTANCE VARIABLE MEMORY WITH TEMPERATURE TOLERANT MATERIALS - A PCRAM memory device having a chalcogenide glass layer, preferably comprising antimony selenide having a stoichometric formula of about Sb | 2010-06-03 |
20100133500 | Memory Cell Having a Side Electrode Contact - Memory cells are described along with methods for manufacturing. A memory cell as described herein includes a bottom electrode, a memory element and a side electrode. The bottom electrode contacts the memory element at a first contact surface on the bottom of the memory element. The side electrode contacts the memory element at a second contact surface on the side of the memory element, where the second contact surface on the side faces laterally relative to the first contact surface on the bottom. | 2010-06-03 |
20100133501 | SWITCHING ELEMENT AND METHOD FOR MANUFACTURING SWITCHING ELEMENT - A switching element of the present invention utilizes electro-chemical reactions to operate, and comprises ion conductive layer | 2010-06-03 |
20100133502 | CMOS-Process-Compatible Programmable Via Device - Programmable via devices and methods for the fabrication thereof are provided. In one aspect, a programmable via device is provided comprising a substrate; a dielectric layer on the substrate; a heater on at least a portion of a side of the dielectric layer opposite the substrate; a first oxide layer over the side of the dielectric layer opposite the substrate and surrounding at least a portion of the heater; a first capping layer over a side of the first oxide layer opposite the dielectric layer; at least one programmable via extending through the first capping layer and the first oxide layer and in contact with the heater, the programmable via comprising at least one phase change material; a second capping layer over the programmable via; a second oxide layer over a side of the first capping layer opposite the first oxide layer; a pair of first conductive vias, each extending through the first and second oxide layers and the first capping layer, and in contact with the heater; and a second conductive via, located between the pair of first conductive vias, extending through the second oxide layer and in contact with the second capping layer. | 2010-06-03 |
20100133503 | PHASE CHANGE MEMORY - A phase change memory is provided, which includes a semiconductor substrate having a first conductive type, buried word lines having a second conductive type, doped semiconductor layers having the first conductive type, memory cells, metal silicide layers, and bit lines. The buried word lines are disposed in the semiconductor substrate. Each buried word line includes a line-shaped main portion extended along a first direction and protrusion portions. Each protrusion portion is connected to one long side of the line-shaped main portion. Each doped semiconductor layer is disposed on one protrusion portion. Each memory cell includes a phase change material layer and is disposed on and electrically connected to one of the doped semiconductor layers. Each metal silicide layer is disposed on one of the line-shaped main portions. Each bit line is connected to memory cells disposed on the word lines in a second direction substantially perpendicular to the first direction. | 2010-06-03 |
20100133504 | LIGHT EMITTING DEVICES - A new light emitting device is disclosed. The device includes a reflector, a surface layer, and a light emitting layer located there-between. The light emitting layer emits light at a wavelength λ. An optical thickness from the light emitting layer to the reflector is approximately m*λ/4, where m is a positive integer. Furthermore, the said device may, in addition, include an optical transform layer adjoining to the light emitting layer. Thus, the light emitted by the device can be not only collimated but also polarized. | 2010-06-03 |
20100133505 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR THE SAME - A high luminance semiconductor light emitting device and a fabrication method for such semiconductor light emitting device are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate. | 2010-06-03 |
20100133506 | NITRIDE SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR - Provided are a nitride semiconductor light emitting element having a nitride semiconductor layered on an AlN buffer layer with improved qualities such as crystal quality and with improved light emission output, and a method of manufacturing a nitride semiconductor. An AlN buffer layer ( | 2010-06-03 |
20100133507 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND FABRICATION METHOD FOR THE SAME - A high luminance semiconductor light emitting device and a fabrication method for the same are provided by forming a metallic reflecting layer using a non-transparent semiconductor substrate. | 2010-06-03 |
20100133508 | GROUP III NITRIDE BASED QUANTUM WELL LIGHT EMITTING DEVICE STRUCTURES WITH AN INDIUM CONTAINING CAPPING STRUCTURE - Group III nitride based light emitting devices and methods of fabricating Group III nitride based light emitting devices are provided. The emitting devices include an n-type Group III nitride layer, a Group III nitride based active region on the n-type Group III nitride layer and comprising at least one quantum well structure, a Group III nitride layer including indium on the active region, a p-type Group III nitride layer including aluminum on the Group III nitride layer including indium, a first contact on the n-type Group III nitride layer and a second contact on the p-type Group III nitride layer. The Group III nitride layer including indium may also include aluminum. | 2010-06-03 |
20100133509 | SEMICONDUCTOR NANOWIRE AND ITS MANUFACTURING METHOD - A method for fabricating a semiconductor nanowire that has first and second regions is provided. A catalyst particle is put on a substrate. A first source gas is introduced, thereby growing the first region from the catalyst particle via a vapor-liquid-solid phase growth. A protective coating is formed on a sidewall of the first region, and a second source gas is introduced to grow the second region extending from the first region via the liquid-solid-phase growth. | 2010-06-03 |
20100133510 | BIO-SENSOR CHIP - Provided is a bio-sensor chip. The bio-sensor chip includes a sensing part, a board circuit part, a channel part, and a cover. In the sensing part, a target material and a detection material interact with each other to detect the target material. The board circuit part is electrically connected to the sensing part. The channel part provides a solution material containing the target material into the sensing part. The cover is coupled to the board circuit part to cover the channel part and the sensing part. | 2010-06-03 |
20100133511 | Integrated Circuits Based on Aligned Nanotubes - Techniques, apparatus and systems are described for wafer-scale processing of aligned nanotube devices and integrated circuits. In one aspect, a method can include growing aligned nanotubes on at least one of a wafer-scale quartz substrate or a wafer-scale sapphire substrate. The method can include transferring the grown aligned nanotubes onto a target substrate. Also, the method can include fabricating at least one device based on the transferred nanotubes. | 2010-06-03 |
20100133512 | METHOD FOR FABRICATING CARBON NANOTUBE TRANSISTORS ON A SILICON OR SOI SUBSTRATE - A method of forming a single wall thickness (SWT) carbon nanotube (CNT) transistor with a controlled diameter and chirality is disclosed. A photolithographically defined single crystal silicon seed layer is converted to a single crystal silicon carbide seed layer. A single layer of graphene is formed on the top surface of the silicon carbide. The SWT CNT transistor body is grown from the graphene layer in the presence of carbon containing gases and metal catalyst atoms. Silicided source and drain regions at each end of the silicon carbide seed layer provide catalyst metal atoms during formation of the CNT. The diameter of the SWT CNT is established by the width of the patterned seed layer. A conformally deposited gate dielectric layer and a transistor gate over the gate dielectric layer complete the CNT transistor. CNT transistors with multiple CNT bodies, split gates and varying diameters are also disclosed. | 2010-06-03 |
20100133513 | NANOPARTICLE / NANOTUBE-BASED NANOELECTRONIC DEVICES AND CHEMICALLY-DIRECTED ASSEMBLY THEREOF - According to some embodiments, the present invention provides a nanoelectronic device based on a nanostructure that may include a nanotube with first and second ends, a metallic nanoparticle attached to the first end, and an insulating nanoparticle attached to the second end. The nanoelectronic device may include additional nanostructures so a to form a plurality of nanostructures comprising the first nanostructure and the additional nanostructures. The plurality of nanostructures may arranged in a network comprising a plurality of edges and a plurality of vertices, wherein each edge comprises a nanotube and each vertex comprises at least one insulating nanoparticle and at least one metallic nanoparticle adjacent the insulating nanoparticle. The combination of at least one edge and at least one vertex comprises a diode. The device may be an optical rectenna. | 2010-06-03 |
20100133514 | SUPERCONDUCTING SHIELDING FOR USE WITH AN INTEGRATED CIRCUIT FOR QUANTUM COMPUTING - An integrated circuit for quantum computing may include a superconducting shield to limit magnetic field interactions. | 2010-06-03 |
20100133515 | Layered devices with crosslinked polymer and methods of preparing the same - The present invention is drawn to a layered organic device, and a method of forming the same. The method includes steps of applying a first solvent-containing organic layer to a substrate and removing solvent from the first solvent-containing organic layer to form a first solidified organic layer. Additional steps include applying a second solvent-containing organic layer to the first solidified organic layer and removing solvent from the second solvent-containing organic layer to form a second solidified organic layer. The first solidified organic layer can be crosslinked, which suppresses negative impact to components in the first solidified organic layer when the solvent of the second solvent-containing organic layer is deposited on the first solidified organic layer. | 2010-06-03 |
20100133516 | CARBON NANO TUBE THIN FILM TRANSISTOR AND DISPLAY ADOPTING THE SAME - Provided are a flexible and transparent carbon nano tube (CNT) thin film transistor using a degradable polymer substrate, and a display adapting the CNT thin film transistor. The polymer substrate is formed of a polymer material that is naturally degraded, and a CNT channel, where a semiconductive CNT is dispersed on a transparent organic material, is prepared on the polymer substrate. Source and drain electrodes, where a conductive CNT is ejected on a transparent organic material, are connected to both sides of the CNT channel. A gate, where a conductive CNT is dispersed on a transparent organic material, is disposed on or below the CNT channel, and a gate insulation layer including a transparent organic material is disposed between the CNT channel and the gate. | 2010-06-03 |
20100133517 | Organic Light Emitting Element and Organic Light Emitting Device Including the Same - An organic light emitting element and an organic light emitting device including the same is provided. At least one p-type or n-type overdoping layer is formed between two light emitting members forming a p-n junction in the organic light emitting element. | 2010-06-03 |
20100133518 | GATE INSULATING FILM FORMING AGENT FOR THIN-FILM TRANSISTOR - There is provided a novel gate insulating film forming material in consideration of not only initial electric properties immediately after the production of a gate insulating film, but also electric properties after other steps are performed while producing a thin-film transistor using the gate insulating film, and even reliability in the electric properties of the produced element. A gate insulating film forming agent for a thin-film transistor comprising an oligomer compound or a polymer compound, both of which contain a repeating unit having a triazinetrione ring containing a hydroxyalkyl-containing group as a substituent on a nitrogen atom, and a solvent; a gate insulating film produced from the gate insulating film forming agent; a thin-film transistor having the gate insulating film; and a method for producing the gate insulating film or thin-film transistor. | 2010-06-03 |
20100133519 | ARYLAMINE COMPOUNDS AND ELECTRONIC DEVICES - There is provided conductive organic arylamine compounds. The compounds may be prepared as films and such films may be used as a hole transporting layer, an emissive layer or an electron transporting layer in organic light emitting devices. | 2010-06-03 |
20100133520 | METHOD FOR MANUFACTURING AN ELECTRODE - The present invention relates to a method for manufacturing an organic electronic device, comprising providing by electro-deposition an electrode to a surface of an electro-active material—the electro-active material comprising an organic electro-active compound—or providing said electrode to a surface of a substrate for said electro-active material, after which the electro-active material is applied to a surface of the electrode, wherein the electro-deposition comprises the use of a plating liquid comprising an ionic liquid and metal or metalloid ions which metal or metalloid ions are reduced and deposited to form the electrode. | 2010-06-03 |
20100133521 | ORGANIC LIGHT-EMITTING DEVICE AND DISPLAY APPARATUS - Provided is an organic light-emitting device having a high emission efficiency and a long lifetime. The organic light-emitting device ( | 2010-06-03 |
20100133522 | WHITE ORGANIC LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME - The present invention relates to a white organic light emitting device and a method for manufacturing the same, in which a hole transport layer is made to have an energy level higher than an energy level of an excited state of a phosphorescent light emitting layer adjacent thereto for enhancing light emitting efficiency of the hole transport layer without an additional exciton blocking layer, and a dopant content in the phosphorescent light emitting layer is adjusted for preventing color shift from taking place. | 2010-06-03 |
20100133523 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, ELECTRONIC DEVICE, AND LIGHTING DEVICE - Light-emitting elements in which an increase of driving voltage can be suppressed are provided. Light-emitting devices whose power consumption is reduced by including such light-emitting elements are also provided. In a light-emitting element having an EL layer between an anode and a cathode, a first layer in which carriers can be produced is formed between the cathode and the EL layer and in contact with the cathode, a second layer which transfers electrons produced in the first layer is formed in contact with the first layer, and a third layer which injects the electrons received from the second layer into the EL layer is formed in contact with the second layer. | 2010-06-03 |
20100133524 | RED PHOSHORESCENT COMPOUND AND ORGANIC ELECTROLUMINESCENT DEVICE USING THE SAME - A red phosphorescent compound includes a host material being capable of transporting an electron or a hole; and a dopant material represented by following Formula 1: | 2010-06-03 |
20100133525 | THIN FILM TRANSISTOR, DISPLAY UNIT, AND METHOD OF MANUFACTURING THIN FILM TRANSISTOR - A thin film transistor includes: a gate electrode; a gate insulting film formed on the gate electrode; an oxide semiconductor thin film layer forming a channel region corresponding to the gate electrode on the gate insulating film; a channel protective layer that is formed at least in a region corresponding to the channel region on the gate insulating film and the oxide semiconductor thin film layer, and that includes a first channel protective layer on a lower layer side and a second channel protective layer on an upper layer side; and a source/drain electrode that is formed on the channel protective layer and is electrically connected to the oxide semiconductor thin film layer. The first channel protective layer is made of an oxide insulating material, and one or both of the first channel protective layer and the second channel protective layer is made of a low oxygen permeable material. | 2010-06-03 |
20100133526 | ORGANIC THIN FILM TRANSISTOR AND FLAT PANEL DISPLAY DEVICE INCLUDING THE SAME - Provided are an organic thin film transistor providing smoother movement of holes between a source electrode or a drain electrode and a p-type organic semiconductor layer, and a flat panel display device including the organic thin film transistor. The organic thin film transistor includes a substrate, a gate electrode disposed on the substrate, a p-type organic semiconductor layer insulated from the gate electrode, a source electrode and a drain electrode separated from each other and insulated from the gate electrode, and a hole injection layer interposed between the source and drain electrodes and the p-type organic semiconductor layer. | 2010-06-03 |
20100133527 | High efficiency lighting device and method for fabricating the same - The present invention discloses a high-efficiency lighting device and a method for fabricating the same. The method of the present invention comprises steps: providing an insulation substrate and sequentially forming an electrode layer and a seed layer on the insulation layer; forming a plurality of zinc oxide micro and nano structures and a plurality of first insulation units on the seed layer, wherein each zinc oxide micro and nano structure is arranged between two neighboring first insulation units; forming a nitride layer on the side wall of each zinc oxide micro and nano structure; and forming an electrode layer on each nitride layer. The present invention achieves a high-efficiency lighting device via growing nitride layers on the side walls of zinc oxide micro and nano structures. Further, the present invention can reduce the fabrication cost. | 2010-06-03 |
20100133528 | CAPACITIVE GAS SENSOR AND METHOD OF FABRICATING THE SAME - A capacitive gas sensor and a method of fabricating the same are provided. The capacitive gas sensor includes an insulating substrate, a metal electrode and a micro thin-film heater wire integrally formed on the same plane of the insulating substrate, and an oxide detection layer coated on the metal electrode and the micro thin-film heater wire. The fabrication method includes depositing a metal layer on an insulating substrate, etching the metal layer so that a metal electrode and a micro thin-film heater wire form an interdigital transducer on the same plane, and forming a nano crystal complex oxide thin film or a complex oxide nano fiber coating layer on the metal electrode and the micro thin-film heater wire as a detecting layer. The capacitive gas sensor can be easily fabricated and can have excellent characteristics such as high sensitivity, high selectivity, high stability, and low power consumption. | 2010-06-03 |
20100133529 | THIN LIGHT-EMITTING DEVICES AND FABRICATION METHODS - A light-emitting device, such as a light-emitting diode (LED), is grown on a substrate including a ZnO-based material. The structure includes a plurality of semiconductor layers and an active layer disposed between the plurality of semiconductor layers. The device is removed from the substrate or the substrate is substantially thinned to improve light emission efficiency of the device. | 2010-06-03 |
20100133530 | SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME - An object is, in a thin film transistor in which an oxide semiconductor is used as an active layer, to prevent change in composition, film quality, an interface, or the like of an oxide semiconductor region serving as an active layer, and to stabilize electrical characteristics of the thin film transistor. In a thin film transistor in which a first oxide semiconductor region is used as an active layer, a second oxide semiconductor region having lower electrical conductivity than the first oxide semiconductor region is formed between the first oxide semiconductor region and a protective insulating layer for the thin film transistor, whereby the second oxide semiconductor region serves as a protective layer for the first oxide semiconductor region; thus, change in composition or deterioration in film quality of the first oxide semiconductor region can be prevented, and electrical characteristics of the thin film transistor can be stabilized. | 2010-06-03 |
20100133531 | SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF - A gate electrode layer over a substrate; a gate insulating layer over the gate electrode layer; a first source electrode layer and a first drain electrode layer over the gate insulating layer; an oxide semiconductor layer over the gate insulating layer; and a second source electrode layer and a second drain electrode layer over the oxide semiconductor layer. A first part, a second part, and a third part of a bottom surface are in contact with the first source electrode layer, the first drain electrode layer, and the gate insulating layer respectively. A first part and a second part of the top surface are in contact with the second source electrode layer and the second drain electrode layer respectively. The first source electrode layer and the first drain electrode layer are electrically connected to the second source electrode layer and the second drain electrode layer respectively. | 2010-06-03 |
20100133532 | COMPOUND SEMICONDUCTOR LIGHT EMITTING DEVICE - There is provided a compound semiconductor light emitting device capable of optimizing strain applied to an active layer and a clad layer to minimize a piezoelectric field and spontaneous polarization in an active layer and to maximize light emission efficiency. In a compound semiconductor light emitting device having a structure in which a buffer layer, a first clad layer, an active layer, and a second clad layer arc sequentially deposited, a strain induction layer and a strain control layer intersect at least once and are deposited between the buffer layer and the first clad layer, the strain induction layer performs induction so that compressive strain to be applied to the active layer is dispersed to the strain control layer, and the compressive strain applied to the active layer is reduced as the compressive strain is applied to the strain control layer. | 2010-06-03 |
20100133533 | DISPLAY DEVICE - By applying an AC pulse to a gate of a transistor which easily deteriorates, a shift in threshold voltage of the transistor is suppressed. However, in a case where amorphous silicon is used for a semiconductor layer of a transistor, the occurrence of a shift in threshold voltage naturally becomes a problem for a transistor which constitutes a part of circuit that generates an AC pulse. A shift in threshold voltage of a transistor which easily deteriorates and a shift in threshold voltage of a turned-on transistor are suppressed by signal input to a gate electrode of the transistor which easily deteriorates through the turned-on transistor. In other words, a structure for applying an AC pulse to a gate electrode of a transistor which easily deteriorates through a transistor to a gate electrode of which a high potential (VDD) is applied, is included. | 2010-06-03 |
20100133534 | INTEGRATED CIRCUIT PACKAGING SYSTEM WITH INTERPOSER AND FLIP CHIP AND METHOD OF MANUFACTURE THEREOF - A method of manufacture of an integrated circuit packaging system includes: providing an interposer having a first side and a second side with the first side having a device contact and an interconnect contact and with the second side having a test pad; mounting an integrated circuit over the device contact; and applying an underfill between the integrated circuit and the interposer. | 2010-06-03 |
20100133535 | SEMICONDUCTOR DEVICE WITH REDUCED PAD PITCH - A semiconductor device includes a first pad, a second pad and a third pad. The first pad and the third pad are electrically connected to each other. The first pad and the second pad are used for bonding. The second pad and the third pad are used for probing. According to this structure, Small size semiconductor device having high reliability even after a probing test can be provided. | 2010-06-03 |
20100133536 | MICROBOLOMETER INFRARED DETECTOR ELEMENTS AND METHODS FOR FORMING SAME - Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants. | 2010-06-03 |
20100133537 | MICRO ELECTRO MECHANICAL DEVICE AND MANUFACTURING METHOD THEREOF - To manufacture a micro structure and an electric circuit included in a micro electro mechanical device over the same insulating surface in the same step. In the micro electro mechanical device, an electric circuit including a transistor and a micro structure are integrated over a substrate having an insulating surface. The micro structure includes a structural layer having the same stacked-layer structure as a layered product of a gate insulating layer of the transistor and a semiconductor layer provided over the gate insulating layer. That is, the structural layer includes a layer formed of the same insulating film as the gate insulating layer and a layer formed of the same semiconductor film as the semiconductor layer of the transistor. Further, the micro structure is manufactured by using each of conductive layers used for a gate electrode, a source electrode, and a drain electrode of the transistor as a sacrificial layer. | 2010-06-03 |
20100133538 | THIN FILM TRANSISTOR DISPLAY PANEL AND METHOD OF MANUFACTURING THE SAME - A thin film transistor array panel according to an exemplary embodiment includes a first colored member overlapping a thin film transistor and a plurality of second colored members simultaneously formed on the first colored member. Accordingly, it is possible to prevent light leakage current of the thin film transistor, to easily repair deterioration of the thin film transistor, to prevent light leakage of a peripheral area and between color filters, and to form stable patterns. | 2010-06-03 |
20100133539 | THIN-FILM TRANSISTOR AND METHOD OF MANUFACTURING THE SAME - Provided is a thin-film transistor (TFT) substrate. The TFT substrate includes: an insulating substrate; a semiconductor pattern which is formed on the insulating substrate, the semiconductor pattern having a top surface and a bottom surface; a source electrode and a drain electrode which are disposed on the top and bottom surfaces of the semiconductor pattern, respectively; a gate electrode which is disposed alongside the semiconductor pattern with a gate insulating film interposed therebetween; a data line which is connected to the source electrode and extends in a first direction; a gate line which is connected to the gate electrode and extends in a second direction; and a pixel electrode which is connected to the drain electrode and is formed in a pixel region. | 2010-06-03 |
20100133540 | GLASS SUBSTRATE, DISPLAY DEVICE HAVING THE SAME, AND METHOD OF MANUFACTURING THE DISPLAY DEVICE - A glass substrate includes at least one surface including an uneven surface having a difference of less than about 0.003 micrometers between a highest point and a lowest point in a section of the glass substrate, the section having a width of about 10 millimeters to about 30 millimeters, and the uneven surfaces being defined by continuously supplying molten glass onto molten metal and cooling the molten glass which floats on the molten metal. | 2010-06-03 |
20100133541 | THIN FILM TRANSISTOR ARRAY SUBSTRATE, ITS MANUFACTURING METHOD, AND LIQUID CRYSTAL DISPLAY DEVICE - In accordance with an exemplary aspect of the present invention, a thin film transistor array substrate includes a transparent insulating substrate, and a thin film transistor for pixel switching and a thin film transistor for a drive circuit formed on the transparent insulating substrate, wherein the thin film transistor for a drive circuit includes an amorphous silicon film formed on the transparent insulating film, a microcrystalline silicon film formed on the amorphous silicon film, a first source electrode and a first drain electrode formed on the microcrystalline silicon film, the first source electrode and the first drain electrode being opposed with a first channel area interposed therebetween, a protective insulating film that covers the first source electrode and the first drain electrode, and an upper gate electrode formed so as to be opposed to the first channel area with the protective insulating film interposed therebetween. | 2010-06-03 |
20100133542 | PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF - A method of manufacturing a pixel structure is provided. A first patterned conductive layer including a gate and a data line is formed on a substrate. A gate insulating layer is formed to cover the first patterned conductive layer and a semiconductor channel layer is formed on the gate insulating layer above the gate. A second patterned conductive layer including a scan line, a common line, a source and a drain is formed on the gate insulating layer and the semiconductor channel layer. The scan line is connected to the gate and the common line is located above the data line. The source and drain are located on the semiconductor channel layer, and the source is connected to the data line. A passivation layer is formed on the substrate to cover the second patterned conductive layer. A pixel electrode connected to the drain is formed on the passivation layer. | 2010-06-03 |
20100133543 | Methods of Making Semiconductor-Based Electronic Devices on a Wire and Articles That Can Be Made Thereby - Strands of active electronic devices (AEDs), such as field-effect transistors, are made by processing a semiconductor substrate so that it yields a number of elongate semiconductor members liberated from the starting substrate. The elongate semiconductor members are secured to wires or wire-like structures so as to form semiconductor-member-on-a-wire composites upon which the AEDs are formed using various deposition and etching techniques. The AED strands have many uses, including the creating of electronic components, including flexible, conformal, rigid and foldable electronics, such as displays and sensors. | 2010-06-03 |
20100133544 | THIN FILM TRANSISTOR AND FABRICATING METHOD THEREOF - A thin film transistor (TFT) includes a poly-silicon island, a gate insulating layer, a gate stack layer, and a dielectric layer. The poly-silicon island includes a source region and a drain region. The gate insulating layer covers the poly-silicon island. The gate stack layer is disposed on the gate insulating layer and includes a first conductive layer and a second conductive layer. A length of the first conductive layer is less than a length of the second conductive layer. The dielectric layer covers the gate insulating layer and the gate stack layer, and therefore a number of cavities are formed between the second conductive layer and the gate insulating layer. | 2010-06-03 |
20100133545 | THIN FILM TRANSISTOR AND METHOD OF FABRICATING THE SAME - A thin film transistor includes a multi-coaxial silicon nanowire unit including a plurality of coaxial silicon nanowires on a substrate, the multi-coaxial silicon nanowire unit including a central portion and end portions of the central portion; a gate electrode on the central portion; and a source electrode and a drain electrode on the respective end portions, respectively, so as to electrically connect to the multi-coaxial silicon nanowire unit. | 2010-06-03 |
20100133546 | System and Method for Manufacturing Thick and Thin Film Devices Using a Donee Layer Cleaved From a Crystalline Donor - Various embodiments of fabricated crystalline-based structures for the electronics, optoelectronics and optics industries are disclosed. Each of these structures is created in part by cleaving a donee layer from a crystalline donor, such as a micaceous/lamellar mass comprising a plurality of lamelliform sheets separable from each other along relatively weak cleavage planes. Once cleaved, one or more of these lamelliform sheets become the donee layer. The donee layer may be used for a variety of purposes, including a crystalline layer for supporting heteroepitaxial growth of one or more semiconductor layers thereon, an insulating layer, a barrier layer, a planarizing layer and a platform for creating useful structures, among others. | 2010-06-03 |
20100133547 | Semiconductor Sensor - A semiconductor sensor determines physical and/or chemical properties of a medium, in particular a pH sensor. The semiconductor sensor has an electronic component with a sensitive surface, said component being constructed for its part on the basis of semiconductors with a large band gap (wide-gap semiconductor). The sensitive surface is provided at least in regions with a functional layer sequence which has an ion-sensitive surface. The functional layer sequence has at least one layer which is impermeable at least for the medium and/or the materials or ions to be determined. | 2010-06-03 |
20100133548 | METHODS FOR IMPROVING THE QUALITY OF EPITAXIALLY-GROWN SEMICONDUCTOR MATERIALS - The invention provides methods which can be applied during the epitaxial growth of two or more layers of semiconductor materials so that the qualities of successive layer are successively improved. In preferred embodiments, surface defects present in one epitaxial layer are capped with a masking material. A following layer is then grown so it extends laterally above the caps according to the known phenomena of epitaxial lateral overgrowth. The methods of the invention can be repeated by capping surface defects in the following layer and then epitaxially growing a second following layer according to ELO. The invention also includes semiconductor structures fabricated by these methods. | 2010-06-03 |
20100133549 | Semiconductor Devices with Current Shifting Regions and Related Methods - A semiconductor device may include a semiconductor buffer layer having a first conductivity type and a semiconductor mesa having the first conductivity type on a surface of the buffer layer. In addition, a current shifting region having a second conductivity type may be provided adjacent a corner between the semiconductor mesa and the semiconductor buffer layer, and the first and second conductivity types may be different conductivity types. Related methods are also discussed. | 2010-06-03 |
20100133550 | STABLE POWER DEVICES ON LOW-ANGLE OFF-CUT SILICON CARBIDE CRYSTALS - A silicon carbide-based power device includes a silicon carbide drift layer having a planar surface that forms an off-axis angle with a < | 2010-06-03 |
20100133551 | HIGH-SPEED OPTICAL INTERCONNECTION DEVICE - Provided is a high-speed optical interconnection device. The high-speed optical interconnection device includes a first semiconductor chip, light emitters, optical detectors, and a second semiconductor chip, which are disposed on a silicon-on-insulator (SOI) substrate. The light emitters receive electrical signals from the first semiconductor chip to output optical signals. The optical detectors detect the optical signals to convert the optical signals into electrical signals. The second semiconductor chip receives the electrical signals converted by the optical detectors. | 2010-06-03 |
20100133552 | LAMP TYPE LIGHT EMITTING DEVICE FOR SAFETY FUSE - A lamp type light emitting device for safety fuse, including a substrate, an electrode layer, a chip set, a wire set, two leads and an encapsulator. The electrode layer is arranged on the substrate and includes a first T-shaped electrode, a second T-shaped electrode, a first stripe electrode and a second stripe electrode. The chip set includes a first resistor chip and a first light emitting chip arranged on the first T-shaped electrode and a second resistor chip and a second light emitting chip arranged on the second T-shaped electrode. The wire set has fuse wires electrically connected the first resistor chip, the first light emitting chip, the first stripe electrode, the second resistor chip, second light emitting chip, and the second stripe electrode. The leads are electrically connected to the first and the second T-shaped electrodes. The encapsulator encapsulates the electrode layer, the chip set and the wire set. | 2010-06-03 |
20100133553 | THERMALLY CONDUCTIVE STRUCTURE OF LED AND MANUFACTURING METHOD THEREOF - A thermally conductive structure of a light emitting diode (LED) includes a vapor chamber, an insulating layer, an electrically conductive layer and a plurality of LEDs. In the invention, the insulating layer is plated over a surface of the vapor chamber; the electrically conductive layer disposed on the insulating layer is electrically separated from the vapor chamber and has a first electrode and a second electrode; and the LEDs arranged on the insulating layer respectively have a first leg connected to the first electrode and a second leg connected to the second electrode; thereby, the invention has an excellent performance of thermal conduction and heat dissipation, which is capable of prolonging the lifespan of LED. | 2010-06-03 |
20100133554 | SOLID STATE LIGHTING DEVICE - A light emission package includes at least one solid state emitter, a leadframe, and a body structure encasing a portion of the leadframe. At least one aperture is defined in an electrical lead to define multiple electrical lead segments, with at least a portion of the aperture disposed outside an exterior side wall of the package. A recess may be defined in the exterior side wall to receive a bent portion of an electrical lead. A body structure cavity may be bounded by a floor, and side wall portions and end wall portions that are separated by transition wall portions including a curved or segmented upper edge, with different wall portions being disposed at different angles of inclination. | 2010-06-03 |
20100133555 | SOLID METAL BLOCK SEMICONDUCTOR LIGHT EMITTING DEVICE MOUNTING SUBSTRATES - A mounting substrate for a semiconductor light emitting device includes a solid metal block having first and second opposing metal faces. The first metal face includes an insulating layer and a conductive layer on the insulating layer. The conductive layer is patterned to provide first and second conductive traces that connect to a semiconductor light emitting device. The second metal face may include heat sink fins therein. A flexible film including an optical element, such as a lens, also may be provided, overlying the semiconductor light emitting device. | 2010-06-03 |
20100133556 | LED ARRAY PACKAGE COVERED WITH A HIGHLY THERMAL CONDUCTIVE PLATE - A light source includes a substrate, a light emitting diode on the substrate, and a phosphor layer over the light emitting diode. A plate is on the phosphor layer. An attachment member is coupled to the plate and is configured to conduct heat away from the plate. | 2010-06-03 |
20100133557 | METAL-BASED PHOTONIC DEVICE PACKAGE MODULE AND MANUFACTURING METHOD THEREOF - A metal-based photonic device package module that is capable of greatly improving heat releasing efficiency and implementing a thin package is provided. The metal-based photonic device package module includes a metal substrate that is formed the shape of a plate, a metal oxide layer that is formed on the metal substrate to have a mounting cavity, a photonic device that is mounted in the mounting cavity of the metal oxide layer, and a reflecting plane that is formed at an inner surface of the mounting cavity of the metal oxide layer. | 2010-06-03 |
20100133558 | FLIP CHIP TYPE LED LIGHTING DEVICE MANUFACTURING METHOD - A flip chip type LED lighting device manufacturing method includes the step of providing a strip, the step of providing a submount, the step of forming a metal bonding layer on the strip or submount, the step of bonding the submount to the strip, and the step of cutting the structure thus obtained into individual flip chip type UP lighting devices. | 2010-06-03 |
20100133559 | AREA LIGHT SOURCE APPARATUS AND LIQUID CRYSTAL DISPLAY APPARATUS ASSEMBLY - Disclosed herein is an area light source apparatus for illuminating a liquid crystal display apparatus of the transmission type, which has a display area formed from a plurality of pixels arrayed in a two-dimensional matrix, from the back, including: a plurality of light emitting element assemblies each provided as a light source and each including a light emitting element and a lens through which light emitted from the light emitting element passes; and a plurality of dummy lenses disposed in the proximity of each of the light emitting element assemblies and configured same as the lenses of the light emitting element assemblies. | 2010-06-03 |
20100133560 | LIGHT EMITTING DEVICE PACKAGE - A light emitting device package is provided. The light emitting device package comprises a package body comprising a first cavity, and a second cavity connected to the first cavity; a first lead electrode, at least a portion of which is disposed within the second cavity; a second lead electrode, at least a portion of which is disposed within the first cavity; a light emitting device disposed within the second cavity; a first wire disposed within the second cavity, the first wire electrically connecting the light emitting device to the first lead electrode; and a second wire electrically connecting the light emitting device to the second lead electrode. | 2010-06-03 |
20100133561 | LIGHT EMITTING APPARATUS - The present invention provides a light emitting apparatus comprising a three-color light emitting device unit including at least three light emitting diode (LED) chips for respectively emitting red, green and blue light; a white light emitting device unit including at least one blue LED chip with a fluorescent substance formed thereon; and a substrate provided with a first electrode connected in common to ends of the LED chips and second electrodes formed to correspond respectively to the LED chips. Further, the present invention provides a light emitting apparatus comprising a plurality of LED chips; a substrate provided with a first electrode connected in common to ends of the plurality of LED chips and second electrodes formed to correspond respectively to the plurality of LED chips; an upper package formed on the substrate to surround the plurality of LED chips and to have a partition crossing the first electrode at the center of the upper package; and a molding member that encapsulates the plurality of LED chips and is divided by the partition of the upper package. | 2010-06-03 |
20100133562 | High Brightness LED Utilizing a Roughened Active Layer and Conformal Cladding - A light emitting device and method for making the same are disclosed. The device includes an active layer disposed between first and second layers. The first layer has top and bottom surfaces. The top surface includes a first material of a first conductivity type, including a plurality of pits in the substantially planar surface. The active layer overlies the top surface of the first layer and conforms to the top surface, the active layer generating light characterized by a wavelength when holes and electrons recombine therein. The second layer includes a second material of a second conductivity type, the second layer overlying the active layer and conforming to the active layer. The device can be constructed on a substrate having a lattice constant sufficiently different from that of the first material to give rise to dislocations in the first layer that are used to form the pits. | 2010-06-03 |
20100133563 | ILLUMINATION SYSTEM COMPRISING A RADIATION SOURCE AND A LUMINESCENT MATERIAL - An illumination system, comprising a radiation source and a luminescent material comprising at least one phosphor capable of absorbing a part of light emitted by the radiation source and emitting light of wavelength different from that of the absorbed light; wherein said at least one phosphor is a yellow red-emitting cerium(III)-activated alkaline earth oxonitridoaluminosilicate of general formula Ca1−x−yAxAl1+a−bBbSi1−aN3−aOa:Cey, wherein A selected from the group comprising beryllium, magnesium, strontium, barium, zinc, manganese, lithium, sodium, potassium, rubidium, praseodymium, samarium, europium, and B selected from the group comprising boron, gallium, scandium and wherein 02010-06-03 | |
20100133564 | Method for Producing Semiconductor Components and Thin-Film Semiconductor Component - The invention relates to a method for producing semiconductor components, wherein a layer composite ( | 2010-06-03 |
20100133565 | LEAD FRAME, LIGHT EMITTING DIODE HAVING THE LEAD FRAME, AND BACKLIGHT UNIT HAVING THE LIGHT EMITTING DIODE - An LED includes a light-emitting chip, a metal member, and a housing. The light-emitting chip generates light. The light-emitting chip is arranged on the metal member. The housing is combined with the metal member to fix the metal member. The housing has an opening portion exposing at least a portion of the light-emitting chip and the metal member. The metal member includes a base metal layer, a light-reflecting layer arranged on the base metal layer, and a protection layer arranged on the light-reflecting layer and including a metal. | 2010-06-03 |
20100133566 | Opto-Electrical Devices and Methods of Making the Same - An opto-electrical device comprising: a first electrode for injecting charge carriers of a first polarity; a second electrode for injecting charge carriers of a second polarity; and a layer of organic material disposed between the first and second electrodes, the layer of organic material comprising a blend of a first charge transporting and/or light-emissive polymer and a second charge transporting and/or light-emissive polymer, wherein at least the first polymer is cross-linked providing a first cross-linked matrix in which the second polymer is disposed. | 2010-06-03 |
20100133567 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor light emitting device and a method of manufacturing the same are provided. The semiconductor light emitting device comprises a first conductive semiconductor layer comprising a concave portion, an active layer on the first conductive semiconductor layer, and a second conductive semiconductor layer on the active layer. | 2010-06-03 |
20100133568 | LIGHT EMITTING DEVICE AND METHOD FOR MANUFACTURING SAME - A light emitting device includes: a substrate including through electrodes; a light emitting element bonded onto the substrate and connected to the through electrodes; and a dielectric film made of a translucent inorganic material and spaced from the light emitting element so that an internal space is formed between the dielectric film and the substrate, emission light from the light emitting element being allowed to be emitted through the dielectric film, and a manufacturing the same are provided. | 2010-06-03 |
20100133569 | Light emitting diode - A light emitting diode includes a substrate, a first semiconductor layer, an active layer, a second semiconductor layer, and at least one transparent conductive layer. The transparent conductive layer comprises of a carbon nanotube structure. | 2010-06-03 |
20100133570 | SEMICONDUCTOR LIGHT EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME - Disclosed is a semiconductor light emitting device, and a method of manufacturing the same. The semiconductor light emitting device includes a first conductivity type semiconductor layer, an active layer disposed on the top of the first conductivity type semiconductor layer, and a second conductivity type semiconductor layer disposed on the top of the active layer and comprising light extraction patterns in the top thereof, the light extraction patterns each having a columnar portion and a hemispherical top portion. | 2010-06-03 |
20100133571 | LIGHT-EMITTING DEVICE - To provide a light emitting device easy to produce and extracting light to its outside with high efficiency, the light-emitting device | 2010-06-03 |
20100133572 | DISPLAY DEVICE AND METHOD FOR MANUFACTURING THE SAME - A display device is provided which includes: lower electrodes each have a light-reflective first metal material layer and a second metal material layer provided thereon which has a superior alkaline-solution resistance to that of the first metal material layer; an insulating pattern which is formed from a photosensitive composition material, which has opening portions to expose the lower electrodes, and which covers peripheries of the lower electrodes; organic layers each of which at least include an organic light emitting layer and which are provided in the opening portions so as to cover the lower electrodes; and a light-transmissive upper electrode provided to sandwich the organic layers with the lower electrodes. | 2010-06-03 |
20100133573 | LIGHT-EMITTING ELEMENT, LIGHT-EMITTING DEVICE, LIGHTING DEVICE, AND ELECTRONIC DEVICE - An object is to provide a light-emitting element which exhibits light emission with high luminance and can be driven at low voltage. Another object is to provide a light-emitting device or an electronic device with reduced power consumption. Between an anode and a cathode, n (n is a natural number of two or more) EL layers are provided, where between a first EL layer and a second EL layer, a first layer containing any of an alkali metal, an alkaline earth metal, a rare earth metal, an alkali metal compound, an alkaline earth metal compound, and a rare earth metal compound, a second layer containing a material having a high electron-transporting property in contact with the first layer, and a region containing a material having a high hole-transporting property and an acceptor material in contact with the second layer are provided in this order from the anode side. | 2010-06-03 |
20100133574 | LIGHT EMITTING DEVICE WITH MULTILAYER SILICON-CONTAINING ENCAPSULANT - A light emitting device that includes a light emitting diode and a multilayer encapsulant is disclosed. The multilayer encapsulant includes a first encapsulant in contact with the light emitting diode and a photopolymerizable composition in contact with the first encapsulant. The first encapsulant may be a silicone gel, silicone gum, silicone fluid, organosiloxane, polysiloxane, polyimide, polyphosphazene, sol-gel composition, or another photopolymerizable composition. The photopolymerizable compositions include a silicon-containing resin and a metal-containing catalyst, the silicon-containing resin comprising silicon-bonded hydrogen and aliphatic unsaturation. Actinic radiation having a wavelength of 700 nm or less can be applied to initiate hydrosilylation within the silicon-containing resins. | 2010-06-03 |
20100133575 | LOW OPTICAL LOSS ELECTRODE STRUCTURES FOR LEDS - An electrode structure is disclosed for enhancing the brightness and/or efficiency of an LED. The electrode structure can have a metal electrode and an optically transmissive thick dielectric material formed intermediate the electrode and a light emitting semiconductor material. The electrode and the thick dielectric cooperate to reflect light from the semiconductor material back into the semiconductor so as to enhance the likelihood of the light ultimately being transmitted from the semiconductor material. Such LED can have enhanced utility and can be suitable for uses such as general illumination. | 2010-06-03 |
20100133576 | CASTING FOR AN LED MODULE - A casting adapted to carry a light emitting diode die and an anti-static die is disclosed. The casting comprises two electrodes for opposite electrodes and a wall. The light emitting diode die is mounted one of electrodes and the anti-static die is mounted on the other electrode. The wall is arranged between the light emitting diode die and the anti-static die. Further, the height of the wall is larger than that of the anti-static die to shade the anti-static die, whereby reflecting the light emitted from the light emitting diode die. Therefore, the reflection ratio of the light emitting diode die is improved, and the intensity generated by the whole light emitting diode is also improved. | 2010-06-03 |
20100133577 | Method for producing electronic component and electronic component - A plurality of chips disposed in a wafer on a passivated main side, having at least one chip contact surface, is provided with an insulation layer. The insulation layer has openings in the area of the at least one chip contact surface of each chip. The chip contact surfaces of each chip are provided with a chip contact surface metallization of a prescribed thickness, and the chips disposed in the water are separated therefrom. | 2010-06-03 |
20100133578 | SOLID STATE LIGHTING DEVICE WITH IMPROVED HEATSINK - A solid state lighting device includes a device-scale stamped heatsink with a base portion and multiple segments or sidewalls projecting outward from the base portion, and dissipates all steady state thermal load of a solid state emitter to an ambient air environment. The heatsink is in thermal communication with one or more solid state emitters, and may define a cup-like cavity containing a reflector. At least a portion of each one sidewall portion or segment extends in a direction non-parallel to the base portion. A dielectric layer and at least one electrical trace may be deposited over a metallic sheet to form a composite sheet, and the composite sheet may be processed by stamping and/or progressive die shaping to form a heatsink with integral circuitry. At least some segments of a heatsink may be arranged to structurally support a lens and/or reflector associated with a solid state lighting device. | 2010-06-03 |
20100133579 | III-Nitride Semiconductor Light Emitting Device - The present disclosure relates to a III-nitride semiconductor light-emitting device including: a plurality of III-nitride semiconductor layers having a first III-nitride semiconductor layer having a first conductivity type, a second III-nitride semiconductor layer having a second conductivity type different from the first conductivity type, and an active layer disposed between the first III-nitride semiconductor layer and the second III-nitride semiconductor layer and generating light by recombination of electrons and holes; a bonding pad electrically connected to the plurality of III-nitride semiconductor layers; a protection film disposed over the bonding pad; and a buffer pad disposed between the bonding pad and the protection film and formed to expose the bonding pad. | 2010-06-03 |
20100133580 | LIGHT EMITTING DIODE PACKAGE STRUCTURE AND CONDUCTIVE STRUCTURE AND MANUFACTURING METHOD THEREOF - A light emitting diode package structure includes a frame, a light emitting diode chip electrically coupled to the frame, an upper packing portion covering the light emitting diode chip on the frame, and a lower packing portion circumferentially disposed on the frame for fixation and next to the upper packing portion. Lights from the light emitting diode chip are outwardly emitted through the upper packing portion. The lower packing portion is extended from and partially covered by the upper packing portion. | 2010-06-03 |
20100133581 | TOP CONTACT LED THERMAL MANAGEMENT - An LED having enhanced heat dissipation is disclosed. For example, an LED die can have extended bond pads that are configured to enhance heat flow from an active region of the LED to a lead frame. A heat transmissive substrate can further enhance heat flow away from the LED die. By enhancing heat dissipation, more current can be used to drive the LED. The use of more current facilitates the production of brighter LEDs. | 2010-06-03 |
20100133582 | NITRIDE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nitride semiconductor light emitting device includes: a multilayer structure a plurality of nitride semiconductor layers including a light emitting layer where the multilayer structure has cavity facets facing each other; and a plurality of protective films made of dielectric materials on at least one of the cavity facets. Among the plurality of protective films, a first protective film in contact with the cavity facet is made of a material containing no oxygen. A second protective film on a surface of the first protective film opposite to the cavity facet is made of a material containing aluminum lower in crystallization temperature than the first protective film. A third protective film on a surface of the second protective film opposite to the first protective film has an exposed surface and made of a material higher in crystallization temperature than the second protective film. | 2010-06-03 |
20100133583 | Semiconductor integrated circuit - Disclosed herein is a semiconductor integrated circuit including a protected circuit; and a protection element formed on the same semiconductor substrate as the protected circuit and adapted to protect the protected circuit, wherein the protection element includes two diodes having their anodes connected together to form a floating node and two cathodes connected to the protected circuit, the two diodes are formed in a well-in-well structure on the semiconductor substrate, and the well-in-well structure includes a P-type well forming the floating gate, an N-type well which surrounds the surfaces of the P-type well other than that on the front side of the substrate with the deep portion side of the substrate so as to form the cathode of one of the diodes, and a first N-type region formed in the P-type well so as to form the cathode of the other diode. | 2010-06-03 |
20100133584 | SEMICONDUCTOR DEVICE STRUCTURE AND METHOD OF MANUFACTURE THEREOF - A semiconductor device structure comprising a first bulk crystal semiconductor material and a second bulk crystal semiconductor material provided on a surface of the first bulk crystal semiconductor material with or without a deliberate intermediate region, the second bulk crystal semiconductor material being a Group II-VI material dissimilar to the first bulk crystal semiconductor material, wherein portions of the first and/or second bulk crystal semiconductor material have been selectively removed to produce a patterned area of reduced thickness of the first and/or second bulk crystal semiconductor and preferably to expose a patterned area of the said surface of the first and/or second bulk crystal semiconductor material. | 2010-06-03 |