22nd week of 2014 patent applcation highlights part 13 |
Patent application number | Title | Published |
20140145126 | PHOTOSENSITIVE COMPOSITION, COLORANT DISPERSION SOLUTION, LIGHT FILTER AND LIGHT SENSOR - A photosensitive composition, suitable for a hardened film capable of sufficiently blocking light in the visible range and sufficiently transmitting light in the near infrared region, is provided. The photosensitive composition contains a colorant, a compound having an ethylenic unsaturated group, a photopolymerization initiator and a solvent. The colorant contains (A1) to (A3); | 2014-05-29 |
20140145127 | Length Adjustable Tool - A length adjustable tool includes a first extending member including first and second ends thereof opposite to each other, with the first end thereof forming a first driving end. A second extending member includes first and second ends thereof opposite to each other, with first extending member slidably and non-rotatably engaged therewith, with the second end thereof forming a second driving end. A positioning mechanism engages with the first and second extending members and is operable to a first position in which the first and second extending members are stopped from sliding relative to each other and a second position in which the first and second extending members are slidable relative to each other. | 2014-05-29 |
20140145128 | Method for installing a wiring harness in an aircraft and tool for implementing said method - A method for installing a wiring harness in an aircraft. The method comprises using cables having first ends secured to the harness and winding means onto each of which is wound one of said cables so as to lift up said harness by exerting a tensile force. The first ends of the cables are distributed along at least a section of the harness so as to distribute the tensile forces over the section. | 2014-05-29 |
20140145129 | WINCH FOR PROVIDING A PART OF UNWOUND CABLE WITH A PREDETERMINED LENGTH - A winch comprises a cable roll; a cable having one end fixed to the cable roll and another end configured to electrically connect an electric device to the cable, wherein the cable is further configured to provide the electric device with electric power and/or with data; a framework to which the cable roll is mounted; measuring means connected to the framework and configured to provide data related to the length of an unwound part of the cable; and processing means configured to control winding and unwinding of the cable based on data provided by the measuring means. The cable has a predetermined reference state at which a predetermined fixed reference point is at a reference position in relation to a coordinate system, wherein the length of unwound cable is defined as the distance measured along the cable, between the location of the predetermined fixed reference point and the reference position. | 2014-05-29 |
20140145130 | WINCH PROVIDED WITH ADJUSTABLE SELF-TAILING AND RELATIVE OPERATION - The invention describes a winch ( | 2014-05-29 |
20140145131 | Lifting System for Display Cases - A lifting system for shelves and store gondolas which provides for a deflective contact engagement of the upright posts of the frame of the shelving which supports the load on engaged shelves and products. The device features a dolly and extending members having an opening on distal ends to contact the post in a removable engagement. Tapers on the members provide for deflection of any kickplates blocking the members from engagement to the posts. The dollies may be employed in a plurality around the shelf and engaged with connector bars between them for a unified movement of the dollies elevating the shelf. | 2014-05-29 |
20140145132 | GUARDRAIL SYSTEM WITH A RELEASABLE POST - A guardrail system includes a guardrail, a support post, and a fastener joining the guardrail and the support post. The support post includes a hole receiving the fastener, a fastener retention mechanism, and a slot for the movement of the fastener during an impact. The fastener retention mechanism retains the fastener in the hole until a predetermined level of force is attained during an impact, after which the fastener is released and moves into the slot. Methods of moving the guardrail relative to the post are also provided. | 2014-05-29 |
20140145133 | SOLID FENCE SLAT SYSTEM - The present application provides a fence slat. The fence slat may include a substantially solid body, a locking portion positioned on the substantially solid body, and a wing anchored in the substantially solid body and extending therefrom. The substantially solid body may have a flattened shape. | 2014-05-29 |
20140145134 | STRUCTURAL POST - A support system includes a structural post, the structural post comprising an open, approximately quadrilateral-shaped cross section comprising four sides and three vertexes. The structural post includes a number of returns formed on ends of a first side and a fourth side of the structural post, the first side and the fourth side defining an open portion of the open, quadrilateral-shaped cross section, and a number of coinings formed on a second side and a third side of the structural post, the second side and the third side sharing a vertex opposite the open portion. | 2014-05-29 |
20140145135 | SUB-OXIDE INTERFACE LAYER FOR TWO-TERMINAL MEMORY - Provision of fabrication, construction, and/or assembly of a two-terminal memory device is described herein. The two-terminal memory device can include an active region with a silicon bearing layer, an interface layer, and an active metal layer. The interface layer can created comprising a non-stoichimetric sub-oxide that can be a combination of multiple silicon and/or silicon oxide layers with an aggregate chemical formula of SiO | 2014-05-29 |
20140145136 | NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF - A non-volatile memory device of the present invention comprises a first electrode; a variable resistance layer formed on and above the first electrode; a second electrode formed on and above the variable resistance layer; a side wall protective layer having an insulativity and covering a side wall of the first electrode, a side wall of the variable resistance layer and a side wall of the second electrode; and an electrically-conductive layer which is in contact with the second electrode; wherein the electrically-conductive layer covers an entire of the second electrode and at least a portion of the side wall protective layer located outward relative to the second electrode, when viewed from a thickness direction; and the side wall protective layer extends across the second electrode to a position above an upper end of the second electrode such that an upper end of the side wall protective layer is located above the upper end of the second electrode, when viewed from a side. | 2014-05-29 |
20140145137 | Resistive Random Access Memory Devices Having Variable Resistance Layers - Resistive memory devices are provided having a gate stack including insulating layers and gates stacked on a substrate in a vertical direction, a channel penetrating the gate stack in the vertical direction to be electrically connected to the substrate, a gate insulating layer provided between the channel and the gates, and a variable resistance layer disposed along an extending direction of the channel. The gate stack may include an alcove formed by recessing the gate in a horizontal direction. The variable resistance layer may extend toward the alcove in the horizontal direction and be overlapped with at least one of the gates in the horizontal direction. Related methods are also provided. | 2014-05-29 |
20140145138 | RESISTIVE RANDOM ACCESS MEMORY DEVICES, AND RELATED SEMICONDUCTOR DEVICE STRUCTURES - A method of forming a chalcogenide material on a surface of a substrate comprising exposing a surface of a substrate to ionized gas clusters from a source gas, the ionized gas clusters comprising at least one chalcogen and at least one electropositive element. A method of forming a resistive random access memory device is also disclosed. The method comprises forming a plurality of memory cells wherein each cell of the plurality of memory cells is formed by forming a metal on a first electrode, forming a chalcogenide material on the metal by a gas cluster ion beam process, and forming a second electrode on the chalcogenide material. A method of forming another resistive random access memory device and a random access memory device including the chalcogenide material are also disclosed. | 2014-05-29 |
20140145139 | TRANSPARENT FLEXIBLE RESISTIVE MEMORY AND FABRICATION METHOD THEREOF - The present invention discloses a transparent flexible resistive memory and a fabrication method thereof. The transparent flexible resistive memory includes a transparent flexible substrate, a memory unit with a MIM capacitor structure over the substrate, wherein a bottom electrode and a top electrode of the memory unit are transparent and flexible, and an intermediate resistive layer is a transparent flexible film of poly(p-xylylene). Poly(p-xylylene) has excellent resistive characteristics. In the device, the substrate, the electrodes and the intermediate resistive layer are all formed of transparent flexible material so that a completely transparent flexible resistive memory which can be used in a transparent flexible electronic system is obtained. | 2014-05-29 |
20140145140 | VARIABLE RESISTANCE MEMORY DEVICE - The present invention relates to a variable resistance memory device and a method for forming the same. A variable resistance memory device according to the present invention includes a first electrode; a second electrode spaced apart from the first electrode; a resistance variable layer and a metal-insulator transition layer provided between the first electrode and the second electrode; and a heat barrier layer provided (i) between the first electrode and the metal-insulator transition layer, (ii) between the metal-insulator transition layer and the resistance variable layer, or (iii) between the second electrode and the metal-insulator transition layer. The present invention prevents dissipation of heat generated in the metal-insulator transition layer using a thermal boundary resistance (TBR) phenomenon, and thus current and voltage to operate the variable resistance memory device can be reduced. | 2014-05-29 |
20140145141 | ELECTRONIC MEMORY DEVICE - An electronic device includes a first electrode made of an inert material; a second electrode made of a soluble material; a solid electrolyte made of an ion-conductive material, wherein the first and second electrodes are in contact respectively with one of the faces of the electrolyte, either side of the electrolyte, wherein the second electrode supplies mobile ions flowing in the electrolyte towards the first electrode, to form a conductive filament when a voltage is applied between the first and second electrodes. The second electrode is a confinement electrode that includes an end surface in contact with the electrolyte which is less than the available surface of the electrolyte, such that confinement of the contact area of the confinement electrode on the solid electrolyte is obtained. | 2014-05-29 |
20140145142 | MEMRISTOR STRUCTURE WITH A DOPANT SOURCE - A memristor including a dopant source is disclosed. The structure includes an electrode, a conductive alloy including a conducting material, a dopant source material, and a dopant, and a switching layer positioned between the electrode and the conductive alloy, wherein the switching layer includes an electronically semiconducting or nominally insulating and weak ionic switching material. A method for fabricating the memristor including a dopant source is also disclosed. | 2014-05-29 |
20140145143 | Carbon Nanotube Transistor Voltage Converter Circuit - A voltage converter circuit includes one or more single-walled carbon nanotube transistors, capable of handling relatively high amounts of current. The transistors are formed using a porous structure which has a number of single-walled carbon nanotubes. The porous structure may be anodized aluminum oxide or another porous material. The circuit will be especially suited for power applications, including use in portable electronic devices such as notebook computers, MP3 players, mobile phones, digital cameras, personal digital assistants, and other battery-operated devices. | 2014-05-29 |
20140145144 | QUANTUM ROD AND METHOD OF FABRICATING THE SAME - A quantum rod includes a core of ZnS semiconductor particle having a rod shape; and a transition metal with which the core is doped and which is biased at one side of a length direction of the core. | 2014-05-29 |
20140145145 | LIGHT EMITTING DEVICE USING GRAPHENE QUANTUM DOT AND ORGANIC LIGHT EMITTING DEVICE INCLUDING THE SAME - The present disclosure relates to a light emitting device using a graphene quantum dot, and an organic light emitting device including the same. | 2014-05-29 |
20140145146 | SEMICONDUCTOR LIGHT EMITTING DEVICE - A semiconductor light emitting device includes an n-type semiconductor layer, a p-type semiconductor layer, and an active layer formed between the n-type semiconductor layer and the p-type semiconductor layer, and emitting light. The device further includes a p-electrode contacting to the p-type semiconductor layer, and including a first conductive oxide layer having an oxygen content lower than 40 atomic % and a second conductive oxide layer contacting to the first conductive oxide layer and having a higher oxygen content than the oxygen content of the first conductive oxide layer. The device also includes an n-electrode connecting electrically to the n-type semiconductor layer. | 2014-05-29 |
20140145147 | NITRIDE SEMICONDUCTOR STRUCTURE AND METHOD OF FABRICATING SAME - A nitride semiconductor structure of the present invention is obtained by growing an h- or t-BN thin film ( | 2014-05-29 |
20140145148 | FIELD EFFECT TRANSISTOR USING GRAPHENE, PHOSPHORUS-DOPED GRAPHENE, AND METHODS OF PRODUCING THE SAME - A field effect transistor using a channel layer including a phosphorus-doped graphene and a method of fabricating the same are provided. Further, a phosphorus-doped graphene and a method of producing the same are provided. The field effect transistor includes: a source electrode and a drain electrode formed on a substrate; and a channel layer comprising a phosphorus-doped graphene, the channel layer electrically connected to the source electrode and the drain electrode. | 2014-05-29 |
20140145149 | Organic Luminescent Compound With Delayed Fluorescence - Novel organic compounds containing an imidazole core and electron donor and acceptor fragments are provided. By selection of the disclosed donor and acceptor groups, compounds exhibiting small singlet-triplet gaps are obtained. These compounds are useful in OLED devices as host materials or as delayed fluorescent emitters. | 2014-05-29 |
20140145150 | Electronic Devices With Display-Integrated Light Sensors - An electronic device is provided with a display and a display-integrated light sensor. The display includes a transparent cover layer, light-generating layers, and a touch-sensitive layer. The display-integrated light sensor is interposed between the transparent cover layer and a display layer such as the touch-sensitive layer or a thin-film transistor layer of the light-generating layers. The light-generating layers include a layer of organic light-emitting material. The display-integrated light sensor can be implemented as an ambient light sensor or a proximity sensor. The display-integrated light sensor may be a packaged light sensor that is integrated into the display layers of the display or may be formed from light-sensor components formed directly on a display circuitry layer such as the touch-sensitive layer or the thin-film transistor layer. | 2014-05-29 |
20140145151 | Organic Electroluminescent Device With Delayed Fluorescence - Novel compounds containing benzothiophene or benzofuran fused to a carbazoles moiety are disclosed. The compounds are substituted such that both an electron donor fragment and an electron acceptor fragment are present within the same molecule. The compounds are capable of exhibiting delayed fluorescence when used in the emissive layer of OLED devices. | 2014-05-29 |
20140145152 | DISPLAY DEVICE AND ORGANIC LIGHT EMITTING DISPLAY DEVICE - A display device including a substrate; an organic light emission unit, which is arranged on the substrate, wherein light emission regions arranged in a first direction emit light of a same color and light emission regions adjacent to one another from among light emission regions arranged in a second direction crossing the first direction emit light of different colors; a counter electrode, which is arranged to cover at least the light emission regions; and an auxiliary electrode, which is formed on the auxiliary electrode, does not overlap the light emission regions, and extends in the second direction. | 2014-05-29 |
20140145153 | DISPLAY DEVICE AND ORGANIC LIGHT-EMITTING DISPLAY DEVICE - A display device and organic light-emitting display device, the display device including a substrate; a first line on the substrate; a first pad electrically connected to the first line, the first pad being on a same layer as the first line; a second line on another layer different from the layer on which the first line is formed, an insulation layer being interposed between the first line and the second line; a second pad on a same layer as the first pad; and a connection part electrically connecting the second line and the second pad. | 2014-05-29 |
20140145154 | ORGANIC LIGHT-EMITTING DEVICE - An organic light-emitting device including: a substrate; a display unit on the substrate; and an encapsulation layer covering the display unit, the encapsulation layer having an alternating stack structure of an organic layer and an inorganic layer, and the organic layer including a polymer polymerized from monomers of Formula 1 and Formula 2: | 2014-05-29 |
20140145155 | DISPLAY DEVICE AND ORGANIC LUMINESCENT DISPLAY DEVICE - Provided is a display device including: a structure including a display area and a peripheral area surrounding the display area; and an inorganic encapsulation thin film disposed on the display and peripheral areas. The peripheral area includes at least one inorganic surface portion having a closed shape continuously. | 2014-05-29 |
20140145156 | ORGANIC LIGHT-EMITTING DISPLAY DEVICE AND METHOD OF MANUFACTURING THE SAME - An organic light-emitting display device includes a thin film transistor, a first insulating layer, a first electrode a second insulating layer, an organic emission layer, a second electrode, a first auxiliary layer in a first region on the second electrode and having a first edge, a third electrode in a second region, on the second electrode and having a second edge contacting the first edge of the first auxiliary layer, and a second auxiliary layer on at least the first region and having a refractive index higher than the first auxiliary layer. | 2014-05-29 |
20140145157 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode display device includes a substrate including a display region, wherein a plurality of pixel regions are defined in the display region; a first electrode over the substrate and in each of the plurality of pixel regions; a first bank on edges of the first electrode and having a first width and a first thickness; a second bank on the first bank and having a second width smaller than the first width; an organic emitting layer on the first electrode and a portion of the first bank; and a second electrode on the organic emitting layer and covering an entire surface of the display region. | 2014-05-29 |
20140145158 | ORGANIC LIGHT EMITTING DIODE DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - An organic light emitting diode display device includes a substrate including a display region, wherein a plurality of pixel regions are defined in the display region; a first electrode over the substrate and in each of the plurality of pixel regions; a bank including a lower layer and an upper layer on the first electrode, the lower layer disposed on edges of the first electrode and having a first width and a first thickness, the upper layer disposed on the lower layer and having a second width smaller than the first width; an organic emitting layer on the first electrode and a portion of the lower layer; and a second electrode on the organic emitting layer and covering an entire surface of the display region. | 2014-05-29 |
20140145159 | ORGANIC ELECTROLUMINESCENCE DEVICE - An organic electroluminescence device comprises a plurality of Pixel Defining Layers (PDLs) formed on a substrate, first electrodes formed in a space that is defined by the substrate and the PDLs, white light emitting layers formed in a space that is defined by the first electrodes and the PDLs, a second electrode formed on the white light emitting layers, first black matrices formed on the second electrode, and a color filter layer located adjacent to the first black matrices and spaced apart from the first black matrices. | 2014-05-29 |
20140145160 | METHODS OF FORMING AN ORGANIC SCATTERING LAYER, AN ORGANIC LIGHT EMITTING DIODE WITH THE SCATTERING LAYER, AND A METHOD OF FABRICATING THE ORGANIC LIGHT EMITTING DIODE - Provided is a method of fabricating an organic scattering layer. The method may include providing a deposition apparatus with a reaction chamber and a source chamber, loading a substrate in the reaction chamber, supplying carrier gas into the source chamber that may be configured to supply an evaporated organic source material into the reaction chamber, a temperature of the carrier gas ranging from 25° C. to 50° C., and spraying the carrier gas and the evaporated organic source material into the reaction chamber through a showerhead to deposit an organic scattering layer on the substrate, the organic scattering layer including organic particles, which may be provided in a molecularized form of the evaporated organic source material, and thereby having an uneven surface. | 2014-05-29 |
20140145161 | ORGANIC LIGHT EMITTING DIODE DISPLAY - An organic light emitting diode display includes a substrate having three folded portions overlapping each other, and a first light emitting unit, a second light emitting unit, and a third light emitting unit on respective ones of the three folded portions of the substrate, the first through third light emitting units overlapping each other and emitting different colors, wherein the first through third light emitting units are on a same surface of the substrate, when the substrate is unfolded to have the three folded portions substantially planar. | 2014-05-29 |
20140145162 | Touch OLED Display Panel and Display Device Comprising the Same - A touch organic light-emitting diode (OLED) display panel and a display device comprising the same are disclosed. The touch OLED display panel comprises: a thin film transistor (TFT) substrate; an OLED layer disposed on the TFT substrate; a substrate disposed on the OLED layer; a sensor layer disposed on the substrate; an optical functional layer having a transmittance of 50% to 80%; and a cover plate, wherein the optical functional film is disposed on a surface of the cover plate. | 2014-05-29 |
20140145163 | Organic Light Emitting Display - An organic light emitting display includes first and second electrodes facing each other on a substrate, a red light emitting layer, a green light emitting layer and a blue light emitting layer formed between the first and second electrodes, a hole-transporting layer formed between the first electrode and each of the red light emitting layer, the green light emitting layer and the blue light emitting layer, and an electron-transporting layer formed between the second electrode and each of the red light emitting layer, the green light emitting layer and the blue light emitting layer, wherein a gap between a photo-luminescence (PL) peak maximum of the red host of the red light emitting layer and a photo-luminescence (PL) peak maximum of the electron-transporting layer contacting the red light emitting layer is within ±25 nm. | 2014-05-29 |
20140145164 | OLED DISPLAY PANEL - An OLED display panel is provided which can dissipate heat generated from a circuit on the OLED display panel to the exterior using a structure which can rapidly reduce costs. A metal film | 2014-05-29 |
20140145165 | ORGANIC LIGHT EMITTING DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An organic light emitting display and a method for manufacturing the same are discussed. The organic light emitting display includes a substrate, an organic light emitting diode positioned on the substrate, and a bather covering the organic light emitting diode. The organic light emitting diode includes a first electrode, an organic layer, and a second electrode. The barrier includes at least one first block monomer layer and at least one second block monomer layer including inorganic precursors. The at least one first block monomer layer and the at least one second block monomer layer are alternately stacked in a vertical direction. | 2014-05-29 |
20140145166 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - To provide a light-emitting element with high emission efficiency. In a light-emitting element including an organic compound between a pair of electrodes, the molecular weight X of the organic compound is 450 or more and 1500 or less, and the absorption edge of the organic compound is at 380 nm or more. By liquid chromatography mass spectrometry in a positive mode in which an argon gas is made to collide with the organic compound subjected to separation using a liquid chromatograph at any energy higher than or equal to 1 eV and lower than or equal to 30 eV, a product ion is detected at least around m/z=(X−240). | 2014-05-29 |
20140145167 | FLAT PANEL DISPLAY - A flat panel display such as an organic light emitting diode (OLED) display or a liquid crystal display (LCD) is disclosed. In one aspect, the OLED display includes: an OLED panel, a foam member attached to the bottom side of the panel by interposing an adhesive layer therebetween and a flexible circuit board electrically connected to the panel and curved and then attached to the foam member. The foam member includes a corresponding portion corresponding to the flexible circuit board and a non-corresponding portion not corresponding to the flexible circuit board, and the adhesive layer forms an air outlet path in at least the non-corresponding portion. | 2014-05-29 |
20140145168 | Light-Emitting Element, Light-Emitting Device, Electronic Device, and Lighting Device - Provided is a novel light-emitting element and a light-emitting element with high light emission efficiency. A light-emitting element at least includes a first electrode, a first light-emitting layer over the first electrode, a second light-emitting layer over and in contact with the first light-emitting layer, a third light-emitting layer over and in contact with the first light-emitting layer, and a second electrode over the third light-emitting layer. One of the first light-emitting layer and the second light-emitting layer contains at least a green-light-emitting phosphorescent compound. The other of the first light-emitting layer and the second light-emitting layer contains at least an orange-light-emitting phosphorescent compound. The third light-emitting layer contains at least a blue-light-emitting hole-trapping fluorescent compound and an organic electron-transport compound that disperses the fluorescent compound. | 2014-05-29 |
20140145169 | MULTICYCLIC AROMATIC COMPOUND AND ORGANIC LIGHT EMITTING DEVICE USING THE SAME - The present specification describes a multicyclic aromatic ring compound having a novel structure and an organic light emitting device using the same. | 2014-05-29 |
20140145170 | GRAPHENE DERIVATIVES, TRANSPARENT CONDUCTIVE FILMS, ORGANICELECTROLUMINESCENT DEVICES, METHODS OF PREPARING THE GRAPHENE DERIVATIVES AND METHODS OF PREPARING ANODE LAYERS OF THE DEVICES - The present invention belongs to the technical field of transparent conductive films and provides a graphene derivative, a transparent conductive film and an organic electroluminescent (EL) device. Methods are also provided for preparation of the graphene derivative and for preparation of an anode of the organic EL device. The graphene derivative exhibits a lower evaporation temperature and a higher work function. The graphene derivative is represented by formula (I): | 2014-05-29 |
20140145171 | ORGANIC LIGHT EMITTING DIODE DISPLAY - Disclosed is an organic light emitting diode display including: a pixel unit including an organic light emitting diode for displaying an image; and a periphery surrounding the pixel unit. The periphery includes a gate common voltage line formed on the substrate and receiving a common voltage from an external circuit, an interlayer insulating layer covering the gate common voltage line and including a common voltage contact hole for exposing a part of the gate common voltage line, a data common voltage line formed on the interlayer insulating layer and contacting the gate common voltage line through the common voltage contact hole, and a plurality of protrusions provided in the common voltage contact hole and formed on the substrate. | 2014-05-29 |
20140145172 | ORGANIC LIGHT-EMITTING ELEMENT - An organic EL element including anode, hole injection layer, buffer layer, light-emitting layer, and cathode, layered on substrate in the stated order, and banks defining a light-emission region, and having excellent light-emission characteristics, due to the hole injection layer having excellent hole injection efficiency, being a tungsten oxide layer including an oxygen vacancy structure, formed under predetermined conditions to have an occupied energy level within a binding energy range from 1.8 eV to 3.6 eV lower than a lowest binding energy of a valence band, and after formation, subjected to atmospheric firing at a temperature within 200° C.-230° C. inclusive for a processing time of 15-45 minutes inclusive to have increased film density and improved dissolution resistance against an etching solution, a cleaning liquid, etc., used in a bank forming process. | 2014-05-29 |
20140145173 | WHITE LIGHT EMITTING ORGANIC ELECTROLUMINESCENT DEVICE AND ORGANIC ELECTROLUMINESCENT DISPLAY HAVING THE SAME - A white light emitting organic electroluminescent device and organic electroluminescent display having the same are provided. The organic electroluminescent device includes a first electrode, a second electrode, and an emission layer interposed between the first and second electrodes and having a fluorescence layer and a phosphorescence layer. Thereby, it is possible to obtain the white light emitting organic electroluminescent device having luminance yield improved. | 2014-05-29 |
20140145174 | LIGHT EMITTING DEVICE - A light emitting device having a plastic substrate is capable of preventing the substrate from deterioration with the transmission of oxygen or moisture content can be obtained. The light emitting device has light emitting elements formed between a lamination layer and an inorganic compound layer that transmits visual light, where the lamination layer is constructed of one unit or two or more units, and each unit is a laminated structure of a metal layer and an organic compound layer. Alternatively, the light emitting device has light emitting elements formed between a lamination layer and an inorganic compound layer that transmits visual light, where the lamination layer is constructed of one unit or two or more units, and each unit is a laminated structure of a metal layer and an organic compound layer, wherein the inorganic compound layer is formed so as to cover the end face of the lamination layer. In the present invention, the lamination layer is formed on the primary surface of the plastic substrate, so that a flexible substrate structure can be obtained while preventing the substrate from deterioration with the transmission of oxygen or moisture content. | 2014-05-29 |
20140145175 | Carbazole Derivative, Light-Emitting Element Material and Organic Semiconductor Material - An object is to provide a novel carbazole derivative that has an excellent carrier-transport property and can be suitably used for a transport layer or as a host material of a light-emitting element. Another object is to provide an organic semiconductor material and a light-emitting element material each using the carbazole derivative. As the carbazole derivative that can achieve the above objects, a carbazole derivative in which a carbazolyl group whose either 2- or 3-position of carbazole is substituted by the 4-position of a dibenzothiophene skeleton or a dibenzofuran skeleton is bonded to aromatic hydrocarbon that has 14 to 70 carbon atoms and includes a condensed tricyclic ring, a condensed tetracyclic ring, a condensed pentacyclic ring, a condensed hexacyclic ring, or a condensed heptacyclic ring has been able to be synthesized. | 2014-05-29 |
20140145176 | Use Of Self-Assembled Layers For Checking The Threshold Voltage Of Organic Transistors - The invention relates to an electronic device comprising at least two organic transistors having different threshold voltages. The device comprises at least two transistors, each including a self-assembled layer of molecules having dipole moments that differ from one another by an absolute value of between 0.2 and 10 debye. The invention is particularly suitable for use in the field of electronic circuit production. | 2014-05-29 |
20140145177 | THIN-FILM TRANSISTOR SUBSTRATE AND METHOD OF MANUFACTURING THE THIN-FILM TRANSISTOR SUBSTRATE - A thin film transistor substrate includes the following elements: a base substrate, a data line disposed on the base substrate, a source electrode contacting the data line, a drain electrode spaced from the source electrode, a channel disposed between the source electrode and the drain electrode, a pixel electrode electrically connected to the drain electrode, a gate insulation pattern disposed on the channel, and a gate electrode disposed on the gate insulation pattern. | 2014-05-29 |
20140145178 | SWITCHING ELEMENT, DISPLAY SUBSTRATE AND METHOD OF MANUFACTURING THE SAME - A switching element includes an active pattern including a channel portion, a source portion connected to the channel portion, and a drain portion connected to the channel portion, the source portion, a gate electrode overlapping the channel portion of the active pattern, a gate insulation layer disposed between the channel portion of the active pattern and the gate electrode, a source electrode disposed on the source portion of the active pattern to make ohmic contact with the source portion, and a drain electrode disposed on the drain portion of the active pattern to make ohmic contact with the drain portion. The drain portion and the channel portion of the active pattern include the same or substantially the same material. | 2014-05-29 |
20140145179 | TFT, METHOD OF MANUFACTURING THE TFT, AND METHOD OF MANUFACTURING ORGANIC LIGHT EMITTING DISPLAY DEVICE INCLUDING THE TFT - A method of manufacturing a thin film transistor (TFT), including forming an oxide semiconductor pattern including a first region, a second region and a third region on a substrate, directly plasma processing the first region and the second region of the oxide semiconductor pattern, forming an insulating layer on the substrate to cover the oxide semiconductor pattern, forming a gate electrode on the insulating layer to overlap the third region, and forming a source electrode and a drain electrode that are insulated from the gate electrode and that contact the first region, the second region being disposed between the first region and the third region. | 2014-05-29 |
20140145180 | SELF-ALIGNED THIN FILM TRANSISTOR AND FABRICATION METHOD THEREOF - Disclosed are a self-aligned thin film transistor capable of simultaneously improving an operation speed and stability and minimizing a size thereof by forming source and drain electrodes so as to be self-aligned, and a fabrication method thereof. The method of fabricating a thin film transistor according to an exemplary embodiment of the present disclosure includes: forming an active layer, a gate insulator, and a gate layer on a substrate; forming a photoresist layer pattern for defining a shape of a gate electrode on the gate layer; etching the gate layer, the gate insulator, and the active layer by using the photoresist layer pattern; depositing a source and drain layer on the etched substrate by a deposition method having directionality; and forming a gate electrode and self-aligned source electrode and drain electrode by removing the photoresist layer pattern. | 2014-05-29 |
20140145181 | DISPLAY DEVICE - To provide a novel display device with improved reliability. The display device includes an insulating layer between a first wiring and a second wiring. The insulating layer includes a first insulating layer and a second insulating layer overlapping with the first insulating layer and a region where a part of the second insulating layer is removed, and the region serves as a protection circuit. In addition, the first insulating layer and the second insulating layer are included in a region where the insulating layer overlaps with a semiconductor layer of a transistor, and a region where the first insulating layer and the second insulating layer are removed is included in a region where the first wiring and the second wiring are directly connected to each other. | 2014-05-29 |
20140145182 | DISPLAY DEVICE AND ELECTRONIC DEVICE - To provide a novel display device. The display device includes a pixel portion, a driver circuit portion that is provided outside the pixel portion, and a protection circuit that is electrically connected to one of or both the pixel portion and the driver circuit portion and includes a pair of electrodes. The pixel portion includes pixel electrodes arranged in a matrix and transistors electrically connected to the pixel electrodes. The transistor includes a first insulating layer containing nitrogen and silicon, and a second insulating layer containing oxygen, nitrogen, and silicon. The protection circuit includes the first insulating layer between the pair of electrodes. | 2014-05-29 |
20140145183 | OXIDE SEMICONDUCTOR FILM, FILM FORMATION METHOD THEREOF, AND SEMICONDUCTOR DEVICE - An oxide semiconductor film with high crystallinity is formed. An oxide semiconductor film having a single crystal region, which is formed by a sputtering method using a sputtering target including a polycrystalline oxide containing a plurality of crystal grains, is provided. The plurality of crystal grains contained in the sputtering target has a plane that is cleaved or is likely to be cleaved because of a weak crystal bond; therefore, the cleavage planes in the plurality of crystal grains are cleaved when an ion collides with the sputtering target, whereby flat plate-like sputtered particles can be obtained. The obtained flat plate-like sputtered particles are deposited on a deposition surface; accordingly, an oxide semiconductor film is formed. The flat plate-like sputtered particle is formed by separation of part of the crystal grain and therefore the oxide semiconductor film can have high crystallinity. | 2014-05-29 |
20140145184 | THIN FILM TRANSISTOR SUBSTRATE AND METHOD FOR PRODUCING SAME - A thin film transistor substrate is equipped with: an insulating substrate ( | 2014-05-29 |
20140145185 | SPUTTERING TARGET - A sputtering target including a sintered body including In, Ga and Mg,
| 2014-05-29 |
20140145186 | OFFSET ELECTRODE TFT STRUCTURE - The present invention generally relates to an offset electrode TFT and a method of its manufacture. The offset electrode TFT is a TFT in which one electrode, either the source or the drain, surrounds the other electrode. The gate electrode continues to be below both the source and the drain electrodes. By redesigning the TFT, less voltage is necessary to transfer the voltage from the source to the drain electrode as compared to traditional bottom gate TFTs or top gate TFTs. The offset electrode TFT structure is applicable not only to silicon based TFTs, but also to transparent TFTs that include metal oxides such as zinc oxide or IGZO and metal oxynitrides such as ZnON. | 2014-05-29 |
20140145187 | Liquid Crystal Display Device - A first transistor, a second transistor, a third transistor, a fourth transistor are provided. In the first transistor, a first terminal is electrically connected to a first wiring; a second terminal is electrically connected to a gate terminal of the second transistor; a gate terminal is electrically connected to a fifth wiring. In the second transistor, a first terminal is electrically connected to a third wiring; a second terminal is electrically connected to a sixth wiring. In the third transistor, a first terminal is electrically connected to a second wiring; a second terminal is electrically connected to the gate terminal of the second transistor; a gate terminal is electrically connected to a fourth wiring. In the fourth transistor, a first terminal is electrically connected to the second wiring; a second terminal is electrically connected to the sixth wiring; a gate terminal is connected to the fourth wiring. | 2014-05-29 |
20140145188 | TRANSPARENT THIN FILM TRANSISTOR, AND METHOD OF MANUFACTURING THE SAME - A thin film transistor (TFT) and a method of manufacturing the same such that an ohmic contact can be formed between a semiconductor layer and a source electrode or between the semiconductor layer and a drain electrode, wherein the TFT can be applied to a plastic substrate. The TFT includes: a substrate; an active layer formed of ZnO, InZnO, ZnSnO, and/or ZnInGaO on the substrate and including a channel region, a source region, and a drain region; a gate electrode insulated from the active layer; and source and drain electrodes insulated from the gate electrode and electrically connected to the source region and the drain region, respectively, wherein the source region and the drain region of the active layer include hydrogen. | 2014-05-29 |
20140145189 | DATA TRANSMISSION THROUGH OPTICAL VIAS - Technologies generally described herein relate to multilayer circuit boards with optical vias for data transmission between the layers. One or more regions may be created on a multilayer circuit board for optical vias. A transparent conducting oxide (TCO) layer can be deposited on a top and/or bottom layer of the circuit board. P-N junctions can be created over the TCO layer about the one or more regions to form optical vias as photo-emitting and/or photo-detecting components. The photo-emitting and/or photo-detecting components may be coupled to electronic components on the multilayer circuit board. | 2014-05-29 |
20140145190 | LIGHT-EMITTING DEVICE AND ELECTRONIC DEVICE USING THE SAME - A lightweight flexible light-emitting device which is able to possess a curved display portion and display a full color image with high resolution and the manufacturing process thereof are disclosed. The light-emitting device comprises: a plastic substrate; an insulating layer with an adhesive interposed therebetween; a thin film transistor over the insulating layer; a protective insulating film over the thin film transistor; a color filter over the protective insulating film; an interlayer insulating film over the color filter; and a white-emissive light-emitting element formed over the interlayer insulating film and being electrically connected to the thin film transistor. | 2014-05-29 |
20140145191 | VOLTAGE CONTRAST INSPECTION OF DEEP TRENCH ISOLATION - A method including forming a first test structure and a second test structure in electrical contact with an inner buried plate and an outer buried plate, respectively, where the first and second test structures each comprise a deep trench filled with a conductive material, and measuring the voltage of the inner buried plate and the outer buried plate immediately after the formation of a deep trench isolation structure, where the inner buried plate and the outer buried plate are positioned on opposite sides of the deep trench isolation structure. | 2014-05-29 |
20140145192 | MASK AND METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUTOR DEVICE - A mask includes a substrate, an effective pixel formation region and a reference pattern formation region. A pixel pattern for forming a pixel component that constitutes a pixel is arranged in the effective pixel formation region. A reference pattern for indicating a reference position where pixel pattern should be arranged in the effective pixel formation region is arranged in the reference pattern formation region. Pixel pattern is arranged to be displaced from the reference position toward a center side of the effective pixel formation region. | 2014-05-29 |
20140145193 | LEAD FRAME AND POWER MODULE - A problem to be solved is to provide a lead frame and a power module having high material yield. | 2014-05-29 |
20140145194 | Semiconductor Device Components and Methods - Semiconductor device components and methods are disclosed. In one embodiment, a semiconductor device component includes a conductive segment having a first surface, a second surface opposite the first surface, a first end, and a second end opposite the first end. A first via is coupled to the second surface of the conductive segment at the first end. A second via is coupled to the first surface of the conductive segment at the second end, and a third via is coupled to the second surface of the conductive segment at the second end. | 2014-05-29 |
20140145195 | ARRAY SUBSTRATE FOR LIQUID CRYSTAL DISPLAY AND METHOD FOR MANUFACTURING THE SAME - An array substrate for a liquid crystal display includes a substrate and first and second subpixels which are positioned on the substrate and are defined by a crossing structure of one gate line, a first data line, a second data line, a first common line, and a second common line. The first subpixel includes a first semiconductor layer, a first source electrode, a first drain electrode, and a first pixel electrode connected to the first drain electrode. The second subpixel includes a second semiconductor layer, a second source electrode, a second drain electrode, and a second pixel electrode connected to the second drain electrode. The first and second subpixels share the one gate line with each other, and the first drain electrode and the second drain electrode are exposed through one contact hole. | 2014-05-29 |
20140145196 | PIXEL STRUCTURE - A pixel structure includes a substrate, a gate line, and a transistor. The gate line includes a gate electrode disposed on the substrate, and the gate electrode has at least, one closed opening. The transistor is disposed on the substrate and electrically connected to the gate line. The transistor includes the gate electrode, a dielectric layer, a channel layer, a source electrode, a drain electrode, and a pixel electrode. The dielectric layer is disposed on the gate electrode and the substrate. The channel layer is disposed on a portion of the dielectric layer. At least one portion of the channel layer overlaps at least one portion of the closed opening. The source electrode and the drain electrode are disposed on the channel layer and at opposite sides of the closed opening. The pixel electrode is electrically connected to the drain electrode. | 2014-05-29 |
20140145197 | Pixel Structure, Dual Gate Pixel Structure And Display Device - According to the present disclosure, there are disclosed a pixel structure, a dual-gate pixel structure and a display device. The pixel structure comprises: a thin film transistor, a passivation layer that is located over the thin film transistor, an upper pixel electrode that is located over the passivation layer, a lower pixel electrode that is located under a gate insulating layer of the thin film transistor; and a common voltage line that is located between the passivation layer and the gate insulating layer. The common voltage line overlaps with the lower pixel electrode and the upper pixel electrode at least in part with the gate insulating layer and the passivation layer interposed therebetween, respectively, so as to form a storage capacitance. | 2014-05-29 |
20140145198 | THIN FILM TRANSISTOR ARRAY SUBSTRATE FOR DIGITAL PHOTO-DETECTOR - A thin film transistor array substrate for a digital photo-detector is provided. The thin film transistor array substrate includes a plurality of gate lines to supply a scan signal; a plurality of data lines to output data, the data lines arranged in a direction crossing the gate lines, wherein cell regions are defined by the gate lines and the data lines; a photodiode in each of the cell regions to perform photoelectric conversion; and a thin film transistor at each intersection between the gate lines and the data lines to turn on according to the scan signal of the gate lines and output the photoelectric conversion signal from the photodiode to the data lines. A contact area between a source electrode of the thin film transistor and a first electrode of the photodiode is at a portion outside an area covered by a photodiode region. | 2014-05-29 |
20140145199 | Array Substrate and Method for Fabricating Array Substrate, and Display Device - The present invention discloses an array substrate, a method for fabricating an array substrate, and a display device, the array substrate includes: a base substrate; a TFT, a gate line, a data line and a pixel electrode formed on the base substrate, the TFT includes: a bottom gate, a first gate insulating layer, an active layer, a second gate insulating layer, a top gate, a gate isolation layer and a source electrode and a drain electrode sequentially formed on the base substrate; wherein, the source electrode and the drain electrode are in contact with the active layer through a first via hole and a second via hole passing through the gate isolation layer and the second insulating layer, respectively; the pixel electrode is in contact with the drain electrode. | 2014-05-29 |
20140145200 | ARRAY SUBSTRATE, FABRICATION METHOD THEREOF AND DISPLAY DEVICE - Embodiments of the present invention provide an array substrate and a fabrication method thereof, and a display device, the array substrate comprises gate lines, data lines, and pixel units defined by the gate lines and the data lines crossing with each other, and each pixel unit comprises a first TFT, whose gate is electrically connected with the gate line, wherein each pixel unit further comprises an auxiliary turn-on structure for forming a turn-on voltage at a channel of the first TFT when the first TFT is switched into conduction. In the embodiments of the present invention, a dual-drive voltage for the first TFT is formed by the auxiliary turn-on structure together with the gate of the first TFT, so that when the turn-on voltage provided by the gate lines is relatively low, the channel of the first TFT can also be turned on, therefore lowering power consumption. | 2014-05-29 |
20140145201 | METHOD AND SYSTEM FOR GALLIUM NITRIDE VERTICAL JFET WITH SEPARATED GATE AND SOURCE - A semiconductor structure includes a III-nitride substrate and a first III-nitride epitaxial layer of a first conductivity type coupled to the III-nitride substrate. The semiconductor structure also includes a first III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial layer and a second III-nitride epitaxial structure of the first conductivity type coupled to the first III-nitride epitaxial structure. The semiconductor structure further includes a second III-nitride epitaxial layer coupled to the first III-nitride epitaxial structure. The second III-nitride epitaxial layer is of a second conductivity type and is not electrically connected to the second III-nitride epitaxial structure. | 2014-05-29 |
20140145202 | NITRIDE SEMICONDUCTOR CRYSTAL - A method of producing a nitride semiconductor crystal uses a metal organic chemical vapor deposition process and offers good controllability with respect to a p-type nitride semiconductor crystal. To that end, an organic metal compound of a group III element, a hydride of nitrogen, and an organic compound having any of the partial structures C—C—O, C—C═O, C═C—O, C═C═O, C≡C—O, and C—O—C are used as source materials, and by a metal organic chemical vapor deposition process, C and O atoms are simultaneously introduced into the crystal to obtain p-type conductivity. | 2014-05-29 |
20140145203 | BIDIRECTIONAL TRANSISTOR WITH OPTIMIZED HIGH ELECTRON MOBILITY CURRENT - An apparatus includes a bidirectional hetero junction field-effect power transistor having a gate between conduction electrodes, semiconductor layers, one formed on the other, and the two meeting at an electron gas layer interface, and a reference electrode embedded in one layer. The reference electrode connects to a potential of a zone of the gas layer that is plumb with the reference electrode, A distance between the reference electrode and one conduction electrode and between the gate and that conduction electrode is between 45 and 55% of a distance between the conduction electrodes. A control circuit connected to the reference electrode generates a switching voltage for switching the transistor from a reference electrode voltage, and to apply a control voltage to the gate. | 2014-05-29 |
20140145204 | LIGHT-EMITTING DIODE AND METHOD FOR PREPARING THE SAME - A method for preparing a light-emitting diode having a vertical structure by stripping a GaN base epitaxial layer and a sapphire substrate by a wet process, the method including: a) preparing a graphical growth substrate; b) growing a GaN base light-emitting diode epitaxial layer on the graphical growth substrate, the GaN base light-emitting diode epitaxial layer from the bottom to the top successively including a N-type GaN layer and a P-type GaN layer; c) successively forming a transparent and electrically conductive film, an omni-directional reflection layer, an electrically conductive reflection layer, and a passive metal protection layer from the bottom to the top on the GaN base light-emitting diode epitaxial layer; and d) removing the first layer of stable material with a high melting point of the growth substrate by dry etching, exposing the N-type GaN layer, and preparing an N electrode on the N-type GaN layer. | 2014-05-29 |
20140145205 | LIGHT EMITTING DEVICE PACKAGE AND LIGHT UNIT HAVING THE SAME - Disclosed is an LED package. The LED package includes a package body, a first frame and a second frame on the package body and a light emitting device chip on the first frame. The first frame is separated from the second frame, and the first frame includes a bottom frame on the package body and at least two sidewall frames extending from the bottom frame and inclined with respect to the bottom frame. | 2014-05-29 |
20140145206 | Semiconductor Device - A semiconductor device includes at least two device cells integrated in a semiconductor body. Each device cell includes a drift region, a source region, a drain region arranged between the source region and the drift region, a diode region, a pn junction between the diode region and the drift region, and a trench with a first sidewall, a second sidewall opposite the first sidewall, and a bottom. The body region adjoins the first sidewall, the diode region adjoins the second sidewall, and the pn junction adjoins the bottom of the trench. Each device cell further includes a gate electrode arranged in the trench and dielectrically insulated from the body region, the diode region and the drift region by a gate dielectric. The diode regions of the at least two device cells are distant in a lateral direction of the semiconductor body. | 2014-05-29 |
20140145207 | Schottky Barrier Diode and Fabricating Method Thereof - A Schottky barrier diode and fabricating method thereof are disclosed. A semiconductor substrate may have a first surface and a second surface positioned oppositely to be provided. Several trenches are formed on the first surface. Each trench has a sidewall with a first depth and a first bottom surface. An insulating material is formed on the first surface of the semiconductor substrate and on the sidewall and the first bottom surface of each trench, wherein the insulating material has a first thickness on the sidewall. The insulating material on the sidewall is patterned to define a second bottom surface having a second depth smaller than the first depth, and the removed portion of the insulating material on the sidewall has a second thickness smaller than the first thickness. Afterward, a contact metal layer is at least formed on the first surface between adjacent trenches. | 2014-05-29 |
20140145208 | CASCODED SEMICONDUCTOR DEVICES - A cascoded power semiconductor circuit has a clamp circuit between the source and gate of a gallium nitride or silicon carbide FET to provide avalanche protection for the cascode MOSFET transistor. | 2014-05-29 |
20140145209 | WIDE BAND GAP SEMICONDUCTOR DEVICE - A semiconductor device comprises an n+ type SiC semiconductor substrate, an n type low concentration drift layer of an SiC semiconductor on the substrate, p type channel regions selectively arranged in the drift layer with a specified distance between the channel regions, an n type source region selectively arranged in the channel region, a source electrode in common contact with the source region and the channel region, and a gate electrode disposed over the drift layer between two channel regions, and over a part of the channel region positioned between the drift layer and the source region intercalating a gate oxide film therebetween. The drift layer has a low concentration of at most 70% of the concentration that is required to exhibit a specified withstand voltage at a minimum ON resistance. | 2014-05-29 |
20140145210 | SEMICONDUCTOR DEVICE - A semiconductor device according to an embodiment includes: a first diamond semiconductor layer of a first conductivity type including a main surface having a first plane orientation; a trench structure formed in the first diamond semiconductor layer; a second diamond semiconductor layer formed on the first diamond semiconductor layer in the trench structure and having a lower dopant concentration than the first diamond semiconductor layer; a third diamond semiconductor layer of a second conductivity type formed on the second diamond semiconductor layer and having a higher dopant concentration than the second diamond semiconductor layer; a first electrode electrically connected to the first diamond semiconductor layer; and a second electrode electrically connected to the third diamond semiconductor layer. | 2014-05-29 |
20140145211 | PROTECTIVE INTERFACE IN SILICON CARBIDE SEMICONDUCTOR DEVICES - Methods, systems, and devices are disclosed for implementing high power circuits and semiconductor devices. In one aspect, a method for fabricating a silicon carbide (SiC) device includes forming a thin layer of a protection material over a SiC substrate, in which the protection material has a lattice constant that substantially matches a lattice constant of SiC and the thin layer has a thickness of less than a critical layer thickness for the protection material over SiC to form a uniform interface between the protection material and SiC, forming a layer of an insulator material over the thin layer of the protection material, and forming one or more transistor structures over the insulator material. | 2014-05-29 |
20140145212 | SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME - A semiconductor device includes a silicon carbide semiconductor substrate, a transistor formed in a cell region of the semiconductor substrate, and a voltage-breakdown-resistant structure formed in a region which surrounds an outer periphery of the cell region. The semiconductor substrate includes a first conductivity type substrate, a first conductivity type drift layer on the first conductivity type substrate, a second conductivity type layer on the drift layer, and a first conductivity type layer on the second conductivity type layer. The voltage-breakdown-resistant structure includes a first recess which surrounds the outer periphery of the cell region and reaches the drift layer, a trench located at a side surface of the recess on an inner periphery of the recess, and a second conductivity type buried layer buried in the trench to provide the side surface of the first recess. | 2014-05-29 |
20140145213 | SCHOTTKY DIODE - The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer. | 2014-05-29 |
20140145214 | SIC EPITAXIAL WAFER AND METHOD FOR PRODUCING SAME, AND DEVICE FOR PRODUCING SIC EPITAXIAL WAFER - A SiC epitaxial wafer manufacturing method of the present invention includes: manufacturing a SiC epitaxial wafer including a SiC epitaxial layer on a surface of a SiC single crystal wafer while supplying a raw material gas into a chamber using a SIC epitaxial wafer manufacturing apparatus; and manufacturing a subsequent SiC epitaxial wafer after measuring a surface density of triangular defects originating from a material piece of an internal member of the chamber on the SiC epitaxial layer of the previously manufactured SiC epitaxial wafer. | 2014-05-29 |
20140145215 | AC LED device and method for fabricating the same - An AC LED device and method for fabricating the same are disclosed. An exemplary embodiment of the AC LED device includes at least two separate AC LED unit chips, wherein each of the AC LED unit chip includes a substrate having a first light emitting module and a second light emitting module. Each of the first and second light emitting modules includes a plurality of light emitting micro diodes connected between a first conductive electrode and a second conductive electrode, wherein the amount of light emitting micro diodes emitting light during a positive half cycle of an AC charge is equal to that during a negative half cycle of an AC charge. A plurality of conductive wires is respectively and electrically connected to the separate AC LED unit chips without passive devices. | 2014-05-29 |
20140145216 | LED WITH WIRE SUPPORT - An LED includes a base, a first chip and a second chip mounted on the base, a wire support formed on the base, and wires electrically connecting the first chip and the second chip with the base. The base includes a first lead, a second lead and an insulative band connecting the first lead and the second lead. A first wire connects an electrode of the first chip to the wire support, and a second wire connects an electrode of the second chip to the wire support. The first wire and the second wire are electrically connected to each other via a conductive layer formed on the wire support. The wire support in one embodiment is a Zener diode. | 2014-05-29 |
20140145217 | SUBSTRATE FOR DISPLAY DEVICE AND METHOD OF FABRICATING THE SAME - A substrate for a display device including a base substrate; a thin film transistor on the base substrate; a passivation layer of a photosensitive organic material on the thin film transistor, the passivation layer having a contact hole exposing the thin film transistor, the photosensitive organic material including an ultraviolet absorber; and a pixel electrode on the passivation layer, the pixel electrode connected to the thin film transistor through the contact hole. | 2014-05-29 |
20140145218 | LIGHT EMITTING DIODE HAVING A PLURALITY OF LIGHT EMITTING UNITS - Exemplary embodiments of the present invention provide a light emitting diode including light emitting units disposed on a substrate, and wires connecting the light emitting units to each other, wherein the light emitting units each include a parallelogram-shaped light emitting unit having two acute angles and two obtuse angles, or a triangular light emitting unit having three acute angles. | 2014-05-29 |
20140145219 | Light Output Device and Method of Manufacture - A light output device and manufacturing method in which an array of LEDs ( | 2014-05-29 |
20140145220 | LIGHT EMITTING DEVICE - To provide a light emitting device in which generation of cross talk between adjacent light emitting elements is suppressed, even when the light emitting device uses a light emitting element having high current efficiency. Also, to provide a light emitting device having high display quality even when the light emitting device uses a light emitting element having high current efficiency. The light emitting device has a pixel portion including a plurality of light emitting elements, wherein each of the plurality of light emitting elements includes a plurality of light emitting bodies provided between a first electrode and a second electrode and a conductive layer formed between the plurality of light emitting bodies, wherein the conductive layer is provided for each light emitting element, and wherein an edge portion of the conductive layer is covered with the plurality of light emitting bodies. | 2014-05-29 |
20140145221 | LED LAMP STRUCTURE WITH HEAT SINK - An LED lamp structure with a heat sink includes a reflection cup, an LED module, and a cover, in addition to the heat sink. The reflection cup has an inside bottom surface, a reflection surface, an outside bottom surface, and a light exit. The LED module is thermally conductively and fixedly provided on the inside bottom surface. The cover covers the LED module. The heat sink is thermally conductively connected to the outside bottom surface. The LED lamp structure is efficient in not only light extraction but also heat dissipation. | 2014-05-29 |
20140145222 | LED Array - An LED array includes: a first LED unit having a first active layer and a first side; a second LED unit having a second active layer and a second side facing the first side; a trench separating the first LED unit from the second LED unit; and a light-guiding structure formed between the first LED unit and the second LED unite for guiding the light emitted by the first active layer and the second active layer away from the LED array. | 2014-05-29 |
20140145223 | SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING GaAs SUBSTRATE - A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 μm. | 2014-05-29 |
20140145224 | OPTOELECTRONIC DEVICE AND METHOD FOR MANUFACTURING THE SAME - A method of fabricating an optoelectronic device, comprising: providing a first substrate; forming an epitaxial stack on the first substrate wherein the epitaxial stack comprising a first conductive-type semiconductor layer, an active layer and a second conductive-type semiconductor layer; etching an upper surface of the second conductive-type semiconductor layer and forming a first texture profile on the upper surface of the second conductive-type semiconductor layer; forming a passivation layer on the upper surface of the second conductive-type semiconductor layer; and etching an upper surface of the passivation layer forming a second texture profile on the upper surface of the passivation layer wherein the first texture profile is different from the second texture profile. | 2014-05-29 |
20140145225 | WHITE LIGHT EMITTING DIODE MODULE - Disclosed is a white light emitting diode module including a conducting wire frame, a first primary color chip, a second primary color chip and a phosphor layer. The conducting wire frame has an accommodating groove. The first primary color chip is installed at the bottom of the middle of the accommodating groove, and the first primary color chip transmits a first light emitting source with a wavelength λ | 2014-05-29 |