22nd week of 2015 patent applcation highlights part 13 |
Patent application number | Title | Published |
20150144802 | WATER PURIFICATION AND WATER SUPPLY SYSTEM DECONTAMINATION APPARATUS - A water sanitizing system including a supply system having a supply conduit with a conduit length; a light-diffusing optical fiber in the conduit that substantially spans the conduit length; and an ultraviolet light source configured to inject ultraviolet light rays into the fiber. The fiber includes: (a) a first end and a second end, the ends defining a fiber length, (b) a core region comprising fused silica having a plurality of scattering sites, and (c) a cladding over the core region, the cladding having an outer photocatalyst region doped with a metal oxide. The cladding may comprise a polymer coating. The fiber is configured to propagate the light rays from the first end toward the second end of the fiber, and scatter the rays in substantially radial directions out of the core region of the fiber at the plurality of scattering sites, and through the photocatalyst region. | 2015-05-28 |
20150144803 | AIR PURIFICATION SYSTEM - This invention relates to an air purification apparatuses and methods for air purification. The air purification apparatuses pass air through energy beams that form one or more fields of energy within a chamber to produce an outflow of sterilized air. In some aspects, a charge generation system is implemented to repel particles from the chamber walls. In some aspects, the fields of energy extend across substantially an entirety of the cross sectional area of the interior volume of the chamber and longitudinally within the chamber. In some aspects, a controller is configured to rotate a beam of collimated light energy within the chamber at a rotational velocity corresponding to at least V/W, wherein V is the linear velocity of a particle within the chamber along the longitudinal axis, and W is the width of the beam of collimated light energy. | 2015-05-28 |
20150144804 | Charged Particle Beam Apparatus - In many cases, the charged particle beam apparatus is used basically for observation at a magnification of 10,000 times or higher. It is thus difficult to recognize how the orientation of a sample seen with the naked eye corresponds to the origination of the sample appearing on an acquired image. This makes it difficult intuitively to grasp the tilt direction and other details of the sample. An object of this invention is to provide a charged particle beam apparatus allowing the orientation and the tilted state of the sample to be grasped intuitively. The apparatus includes: a charged particle beam source that emits a charged particle beam; a charged particle beam optical system that irradiates the sample with the charged particle beam; a platform on which the sample is placed; a stage capable of moving the platform at least in a tilt direction; a display unit that displays a tilted state of the platform by use of a simulated image of the platform; an operation input unit that allows a user to designate the position and direction of the sample for observation; and a control unit that controls the amount of movement of the stage based on a signal input from the operation input unit. | 2015-05-28 |
20150144805 | OPTICAL COUPLER DEVICE AND CONFOCAL OBSERVATION SYSTEM - A fourth port of a first WDM-type optical coupler and a fifth port of a second WDM-type optical coupler are optically connected, and a second port of the first WDM-type optical coupler and an eighth port of the second WDM-type optical coupler are optically connected. A light source for emitting excitation light is connected to a first port of the first WDM-type optical coupler, and a light-receiving section (light detector) is connected to a sixth port of the second WDM-type optical coupler. Excitation light is emitted through a seventh port of the second WDM-type optical coupler toward an observed subject, fluorescence from the observed subject is acquired through the seventh port of the second WDM-type optical coupler, and input fluorescence is detected by the light-receiving section. | 2015-05-28 |
20150144806 | TWO-DIRECTIONAL SCANNING FOR LUMINESCENCE MICROSCOPY - In one form, a two-directional scanning method for luminescence microscopy is disclosed. A series of continuous scans are performed by an interrogation wide-field relative to a first direction and a target is identified. A precise position of the target is determined in the first direction. At least one scan by the interrogation wide-field is performed relative to a second direction at or near the precise position of the target in the first direction. The two-directional scanning method produces “on-the-fly” (i.e. ex tempore or impromptu) precise localization of targets. Embodiments open up new applications for background-free or background-reduced luminescence microscopy, for example time-gated or time-resolved luminescence microscopy, in a relatively fast, higher speed or more efficient manner. | 2015-05-28 |
20150144807 | DRAWING DATA CREATING METHOD, DRAWING APPARATUS, DRAWING METHOD, AND ARTICLE MANUFACTURING METHOD - The present invention relates to a method for drawing data that indicates a timing at which a substrate is irradiated with a beam. The method includes determining whether or not a mark to be irradiated with the beam exists in a predetermined region on a substrate. The method further includes creating, in a case where the mark exists in the predetermined region, the drawing data such that a mark region including the mark is irradiated with the beam at a predetermined timing after a region other than the mark region is irradiated with the beam. | 2015-05-28 |
20150144808 | Plasma Source Apparatus and Methods for Generating Charged Particle Beams - A plasma source apparatus for generating a beam of charged particles is disclosed. The apparatus comprises: a plasma chamber provided with an inlet for the ingress of gas and an aperture for the extraction of charged particles from the plasma chamber; a radio frequency (RF) plasma generation unit for generating a plasma inside the plasma chamber, the radio frequency plasma generation unit comprising first and second resonant circuits each tuned to resonate at substantially the same resonant frequency, the first resonant circuit comprising a first antenna and a first, RF power source adapted to drive the first resonant circuit at substantially its resonant frequency, and the second resonant circuit comprising a second antenna, whereby in use an RF signal is induced in the second antenna by the first resonant circuit due to resonant coupling, the second resonant circuit being configured to apply the induced RF signal to the plasma chamber to generate a plasma therein; and a particle accelerating unit for extracting charged particles from the plasma and accelerating the charged particles to form a beam, the particle accelerating unit comprising a second power source configured to apply potential between the plasma chamber and an accelerating electrode, the region between the plasma chamber and the accelerating electrode constituting an acceleration column. The second power source is adapted to output a high voltage relative to that output by the first, RF power source. | 2015-05-28 |
20150144809 | TARGET SUPPLY DEVICE AND EXTREME ULTRAVIOLET LIGHT GENERATION APPARATUS - A target supply device may include: a tank including a storage portion that stores a target material and a supply portion that is in communication with the storage portion, the target material flowing into the supply portion; a nozzle including a nozzle hole that is in communication with the supply portion to be fed with the target material; and a coating portion that covers a wall surface of the nozzle hole. | 2015-05-28 |
20150144810 | TRIPLE MODE ELECTROSTATIC COLLIMATOR - A system includes a first electrode to receive an ion beam, a second electrode to receive the ion beam after passing through the first electrode, the first and second electrode forming an upstream gap defined by a convex surface on one of the first or second electrode and concave surface on the other electrode, a third electrode to receive the ion beam after passing through the second electrode, wherein the second and third electrode form a downstream gap defined by a convex surface on one of the second or third electrode and concave surface on the other electrode, wherein the second electrode has either two concave surfaces or two convex surfaces; and a voltage supply system to independently supply voltage signals to the first, second and third electrode, that accelerate and decelerate the ion beam as it passes through the first, second, and third electrode. | 2015-05-28 |
20150144811 | RADIOTHERAPY APPARATUS - A radiotherapy apparatus includes a rotatable drum on which is mounted a gantry arm carrying a radiation source, the arm extending from the drum to locate the source is offset from the axis of rotation of the drum and oriented towards the axis, and a mechanism to apply a tilt to the arm depending on the rotational orientation of the drum. | 2015-05-28 |
20150144812 | SCANNING OPTICAL SYSTEM, OPTICAL SCANNING APPARATUS, AND RADIATION IMAGE READOUT APPARATUS - A scanning optical system includes: a galvanometer mirror that reflects and deflects a light beam emitted from a light source, and an fθ lens that focuses the deflected light beam on a scanning target surface. The fθ lens is constituted by a first lens, which is a spherical lens having a positive refractive power, a second lens, which is a spherical lens having a negative refractive power, a third lens, which is a spherical lens having a negative refractive power, and a fourth lens, which is a spherical lens having a positive refractive power, provided in this order from the side of the galvanometer mirror. The scanning optical system satisfies Conditional Formula (1) below: | 2015-05-28 |
20150144813 | SPHERICAL-ANNULAR BLOWOUT PREVENTER HAVING A PLURALITY OF PISTONS - A blowout preventer assembly is provided and is generally configured having an upper housing, a lower housing with a plurality of internally interconnected cylinders, a one piece energizing ring, and a plurality of individual bottom cover plates all enclosing a lower housing column bore for receiving well pipe. The blowout preventer assembly also has a plurality of annular pistons, a plurality of associated glands disposed in each cylinder with each piston, a main seal with a plurality of main seal ribs, an adaptor ring, and various dedicated and associated seals and threaded attachments. | 2015-05-28 |
20150144814 | BLOWOUT PREVENTER WITH PRESSURE-ISOLATED OPERATING PISTON ASSEMBLY - A ram-type blowout preventer including an operating piston assembly isolated from wellbore pressure effects is provided. In one embodiment, a blowout preventer includes piston coupled to a ram by a connecting rod, and the connecting rod is inserted into a recess in the ram. A pressure-isolating seal may be provided in the recess between the connecting rod and the ram to isolate the end of the connecting rod within the recess from wellbore pressure in the blowout preventer. Additional systems, devices, and methods are also disclosed. | 2015-05-28 |
20150144815 | CLOG RESISTANT VALVE PORT AND METHODS RELATING TO SAME - An irrigation valve has a valve body with an inlet passage, an outlet passage, a valve seat intermediate the inlet passage and the outlet passage and a control chamber exit or bypass passage terminating in a surface that defines a portion of the outlet passage, the valve body including at least one of a recess and a rib for hindering clogging of the bypass passage. Related methods for hindering clogging of the control chamber or exit bypass passage are also disclosed. | 2015-05-28 |
20150144816 | GATE VALVE WITH PNEUMATIC SYSTEM FOR SHEARING APPLICATION - Embodiments of the present disclosure are directed toward a second pneumatic actuator configured to couple to a gate valve, wherein the second pneumatic actuator is configured to apply a supplemental force to a gate of the gate valve, wherein the supplemental force supplements an actuating force of a first actuator of the gate valve. | 2015-05-28 |
20150144817 | SHUTOFF VALVE - A shutoff valve, in particular for shutting off a paint conducting channel in a painting plant, includes a shutoff body, a pressure-operated stroke piston movable in an opening direction, thereby moving the shutoff body from a closed position into an open position; and a piston stop limiting a stroke travel of the stroke piston in the opening direction, and being adjustable to assume different working positions along the opening direction. | 2015-05-28 |
20150144818 | TEST AND MONITORING SYSTEM FOR A SUMP PUMP INSTALLATION HAVING A SELF-PROTECTING VALVE ASSEMBLY FOR ADMITTING WATER TO THE SUMP CONTAINER - A self-protecting valve assembly for use in conjunction with a sump pump test and monitoring system having a test control module which generates a valve control signal for opening the valve to initiate a test cycle. The valve assembly includes an electrically-actuated valve which is responsive only to a valve-actuating signal and not to the valve control signal. A conversion circuit in the valve assembly converts the valve control signal to a valve actuating signal to actuate the valve. This protects the valve from receiving a false actuating signal in the event of a failure in the test control module. | 2015-05-28 |
20150144819 | ISOLATION VALVE WITH FAST DEPRESSURIZATION FOR HIGH-PRESSURE FUEL TANK - An isolation valve may include a flow restrictor disposed in a passage having non-parallel sides, the flow restrictor having an orifice. A flow restrictor spring may apply a biasing force on the flow restrictor to bias the flow restrictor to an open position. A solenoid assembly may include having a coil and an armature that may be moveable between (i) an extended position that overcomes the biasing force of the restrictor spring to move the flow restrictor to a closed position and to close the second orifice, and (ii) a retracted position to open the orifice. If the coil is energized, the armature may move to the retracted position to allow vapor to flow through the orifice at least until the biasing force of the flow restrictor spring overcomes a vapor pressure. The open position of the flow restrictor may allow vapor to flow through a space between the flow restrictor and the passage. | 2015-05-28 |
20150144820 | METHOD FOR SOLENOID MOTOR VENTING WITH CONTAMINATION PROTECTION VIA A HYDRAULIC SLEEVE - A solenoid valve is provided having a hydraulic body with an undulated expansion artery to prevent an exchange of fluid between an interior of the hydraulic body and the exterior of the solenoid valve. | 2015-05-28 |
20150144821 | REAR ELECTROMAGNET FOR VIBRATING PUMP AND VALVES - A rear electromagnet suitable for vibrating pumps and electrical valves. The rear electromagnet for vibrating pump and electrical valves, which is the subject of this invention, has features intended to increase the efficiency of the magnetic system due the particular position of the electromagnet in order to exert a direct attractive force over the ferritic core and to obtain the same performances with less copper, iron and consume less electricity. | 2015-05-28 |
20150144822 | Diaphragm Valve - A diaphragm valve includes a valve body, a diaphragm, a bonnet, an operation mechanism, and a fixing mechanism. The fixing mechanism includes a clamping member for integrally sandwiching and fixing, from both right and left sides, circumferential edges of both the bonnet and the valve body. A circular pressing member for pressing a circumferential edge of the diaphragm from above is interposed between the diaphragm and the bonnet and has convex portions and concave portions. The convex portions fit into notches provided at the circumferential edge of the diaphragm or the valve body, and the concave portions are fitted by protrusions provided at the circumferential edge of the diaphragm or the valve body. | 2015-05-28 |
20150144823 | DUAL SEAL FIRE SAFE STEM PACKING ORIENTATION - A valve with a packing assembly includes a valve body assembly with a bore, a valve member moveable between an open position and a closed position, and a valve stem coupled to the valve member. A first stem packing circumscribes a portion of the valve stem, and is located in an upper bore portion of the bore. A first packing retainer has a collar that limits axial movement of the first stem packing, and also has a first retainer body defining an inner cavity. A second stem packing circumscribes a portion of the valve stem and is located in the inner cavity of the first packing retainer. A second packing retainer has a neck compressingly engaging the second stem packing, and a retainer shoulder that engages the first packing retainer. A retaining assembly is coupled with the valve body assembly for applying axial force to the second packing retainer. | 2015-05-28 |
20150144824 | VALVE FOR PRESSURIZED FLUID AND TANK FURNISHED WITH SUCH A VALVE - A valve for pressurized fluid, with or without incorporated pressure-reducing valve, comprising a body accommodating a fluid circuit having an upstream end designed to be placed in communication with a reserve of pressurized fluid and a downstream end designed to be placed in communication with a using device, the circuit comprising an isolation valve element in order to selectively close off the circuit, the valve element being controlled by a lever mounted so as to pivot on the body between a rest position in which the isolation valve element is held in a position of closing the circuit and an active position in which the lever moves the isolation valve element into a position of opening the circuit , wherein the lever comprises at least one opening, wherein the valve comprises a functional abutment mounted on the body and wherein only in the rest position the opening accommodates within it a portion of the functional abutment mounted on the body. | 2015-05-28 |
20150144825 | SERVICE MAIN PISTON BUSHING CONTAINING TWO SPRING RAMPS - A main piston bushing for a service valve portion of a brake control valve includes a cylindrical sidewall defining a central passageway extending longitudinally through the main piston bushing, the central passageway being surrounded by an internal surface of the cylindrical sidewall. The central passageway is configured to receive the main piston assembly of the service valve portion. The internal surface of the cylindrical sidewall includes a first ramp and a second ramp defined therein, the first ramp and the second ramp being configured to engage a portion of the main piston assembly of the service valve portion to restrain movement of the main piston assembly. | 2015-05-28 |
20150144826 | VALVE SEATS FOR USE IN FRACTURING PUMPS - A valve seat at least partially formed of a ceramic material for use in a fracturing pump includes a first body and a second body. The first body is configured to be inserted into a fluid passageway of the fracturing pump. The first body has an outer diameter, D1. The second body extends radially from the first body and has an outer diameter, D2, greater than the outer diameter, D1, of the first body. The second body is at least partially formed of the ceramic material. | 2015-05-28 |
20150144827 | BIODEGRADABLE SUSPENSION FORMING COMPOSITIONS - A fire suppression composition includes starch, a pseudo-plastic, high yield, suspending agent, and agglomerating material. | 2015-05-28 |
20150144828 | Si-Mg-BASED INORGANIC FIBERS AND COMPOSITION CONTAINING THE SAME - A composition for inorganic fibers having the following composition ratio and including no solvent: SiO | 2015-05-28 |
20150144829 | COMPOSITION IN THE FORM OF A DISPERSION COMPRISING A LIGNIN, A METHOD FOR THE MANUFACTURING THEREOF AND USE THEREOF - The present invention relates to a composition in the form of a dispersion, a method for the manufacturing of said composition and uses thereof. | 2015-05-28 |
20150144830 | HEAT RESISTANT INORGANIC FIBER - Inorganic fibers which contain Na | 2015-05-28 |
20150144831 | BIOGENIC ACTIVATED CARBON AND METHODS OF MAKING AND USING SAME - Biogenic activated carbon compositions disclosed herein comprise at least 55 wt % carbon, some of which may be present as graphene, and have high surface areas, such as Iodine Numbers of greater than 2000. Some embodiments provide biogenic activated carbon that is responsive to a magnetic field. A continuous process for producing biogenic activated carbon comprises countercurrently contacting, by mechanical means, a feedstock with a vapor stream comprising an activation agent including water and/or carbon dioxide; removing vapor from the reaction zone; recycling at least some of the separated vapor stream, or a thermally treated form thereof, to an inlet of the reaction zone(s) and/or to the feedstock; and recovering solids from the reaction zone(s) as biogenic activated carbon. Methods of using the biogenic activated carbon are disclosed. | 2015-05-28 |
20150144832 | COBALT CARBIDE-BASED NANOPARTICLE PERMANENT MAGNET MATERIALS - A crystalline ferromagnetic material based upon nanoscale cobalt carbide particles and a method of manufacturing the material via a polyol reaction are disclosed. The crystalline ferromagnetic cobalt carbide nanoparticles are useful for high performance permanent magnet applications. The processes are extendable to other carbide phases. Fe- and FeCo-carbides are realizable by using as precursor salts Fe-, Co-, and mixtures of Fe- and Co-salts, such as acetates, nitrates, chlorides, bromides, citrates, and sulfates. The materials include mixtures and/or admixtures of cobalt carbides, as both Co | 2015-05-28 |
20150144833 | REFRIGERANT GAS COMPOSITION - Present invention relates to a refrigerant composition comprising tetrafluorethane, difluoromethane and pentafluoroethane for use in heating and cooling applications, especially for inverter air-conditioners/heat pumps. | 2015-05-28 |
20150144834 | STRUCTURALLY ENHANCED PLASTICS WITH FILLER REINFORCEMENTS - A composition comprising a fluid, and a material dispersed in the fluid, the material made up of particles having a complex three dimensional surface area such as a sharp blade-like surface, the particles having an aspect ratio larger than 0.7 for promoting kinetic boundary layer mixing in a non-linear-viscosity zone. The composition may further include an additive dispersed in the fluid. The fluid may be a thermopolymer material. A method of extruding the fluid includes feeding the fluid into an extruder, feeding additives into the extruder, feeding a material into the extruder, passing the material through a mixing zone in the extruder to disperse the material within the fluid wherein the material migrates to a boundary layer of the fluid to promote kinetic mixing of the additives within the fluid, the kinetic mixing taking place in a non-linear viscosity zone. | 2015-05-28 |
20150144835 | PHENOLIC RESIN COMPOSITION - Provided is a phenolic resin composition containing: an epoxy resin curing agent that contains a hydroxybenzene derivative represented by the following Formula (I) and a phenol resin having at least one partial structure selected from the group consisting of the following Formulae (IIa), (IIb), (IIc) and (IId); and an epoxy resin. In these Formulae, each of R | 2015-05-28 |
20150144836 | COMPOSITION FOR DUST CONTROL - The invention is directed towards methods and compositions for preventing dusting problems in mineral supplement. The method involves treating the mineral supplement or a dust releasing material with a composition comprising polymerized organic acid. | 2015-05-28 |
20150144837 | PRODUCTION OF BIODIESEL FROM OILS AND FATS VIA SUPERCRITICAL WATER - A method for transforming selected renewable oils and fats, and optionally polyester waste plastic materials, into a plurality of reaction products via supercritical water is disclosed. The method comprises: conveying the selected oils and fats material through an extruder, wherein the extruder is configured to continuously convey the selected oils and fats material to a supercritical fluid reaction zone; injecting hot compressed water into the supercritical fluid reaction zone, while the extruder is conveying the selected oil and fats material into the supercritical fluid reaction zone so as to yield a mixture; retaining the mixture within the reaction zone for a period of time sufficient to yield the plurality of reaction products. The reaction zone may be characterized by a tubular reactor having an adjustably positionable inner tubular spear, wherein the tubular reactor and the inner tubular spear further define an annular space within the reaction zone, and wherein the mixture flows through the annular space and into a reaction products chamber. | 2015-05-28 |
20150144838 | OXYGEN-ABSORBING RESIN COMPOSITION - An oxygen-absorbing resin composition copolymerized polyolefin compound including a copolymerized polyolefin compound and a transition metal catalyst, wherein the copolymerized polyolefin compound is a copolymerized polyolefin compound including at least one of constitutional unit (a) selected from the group consisting of the constitutional units represented by the general formula (1), and at least one of the constitutional unit (b) having an indane ring, selected from the group consisting of the constitutional units represented by the general formulas (2) and (3). | 2015-05-28 |
20150144839 | OPTICAL COMPOSITION - An optical composition is provided, comprising: —a polysilsesquioxane comprising repeating units of the formula [R—SiO | 2015-05-28 |
20150144840 | PROCESS FOR DEEP CONTAMINENT REMOVAL OF GAS STREAMS - A process for removing sulfur-containing contaminants from a gas stream comprising:
| 2015-05-28 |
20150144841 | GASEOUS FUEL CPOX REFORMERS AND METHODS OF CPOX REFORMING - A gaseous fuel catalytic partial oxidation (CPOX) reformer can include a plurality or an array of spaced-apart CPOX reactor units, each reactor unit including an elongate tube having a wall with internal and external surfaces, the wall enclosing an open gaseous flow passageway with at least a portion of the wall having CPOX catalyst disposed therein and/or comprising its structure. The catalyst-containing wall structure and open gaseous flow passageway enclosed thereby define a gaseous phase CPOX reaction zone, the catalyst-containing wall section being gas-permeable to allow gaseous CPOX reaction mixture to diffuse therein and hydrogen-rich product reformate to diffuse therefrom. At least the exterior surface of a CPOX reaction zone of a CPOX reactor unit can include a hydrogen barrier. The gaseous fuel CPOX reformer also can include one or more igniters, and a source of gaseous reformable fuel. | 2015-05-28 |
20150144842 | TREATMENT OF SYNTHESIS GASES FROM A GASIFICATION FACILITY - A technology for producing synthesis gas from crude gas from various gasification processes for solid or liquid fuels. To limit the temperatures in a subsequent strongly exothermic CO shift reaction to adjust the H | 2015-05-28 |
20150144843 | COAL GASIFIER - Provided is a coal gasifier enabling a reduction in size of a shift reactor by generating hydrogen-rich gasified coal gas. In a coal gasifier (G) generating gasified coal gas by a gasification reaction proceeding in a furnace fed with a gasifiable raw material, such as coal, and a gasifying agent, at least one of water and steam is fed to the furnace as a material accelerating a hydrogen-generating reaction that proceeds simultaneously with the gasification reaction. | 2015-05-28 |
20150144844 | COMPOSITES INCORPORATING A CONDUCTIVE POLYMER NANOFIBER NETWORK - Methods of forming composites that incorporate networks of conductive polymer nanofibers are provided. Networks of less-than conductive polymers are first formed and then doped with a chemical dopant to provide networks of conductive polymers. The networks of conductive polymers are then incorporated into a matrix in order to improve the conductivity of the matrix. The formed composites are useful as conductive coatings for applications including electromagnetic energy management on exterior surfaces of vehicles. | 2015-05-28 |
20150144845 | SOLVENT OR SOLVENT COMPOSITION FOR ORGANIC TRANSISTOR PRODUCTION - Provided is a solvent or solvent composition for organic transistor production that is excellent in solubility of an organic semiconductor material and that can form an organic transistor high in crystallinity. | 2015-05-28 |
20150144846 | ORGANIC SEMICONDUCTOR - The invention relates to novel compounds containing one or more units derived from 1,5-disubstituted-1,5-dihydro-[1,5]naphthyridine-2,6-dione, to methods for their preparation and educts or intermediates used therein, to mixtures and formulations containing them, to the use of the compounds, mixtures and formulations as organic semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising these compounds, mixtures or formulations. | 2015-05-28 |
20150144847 | CONJUGATED POLYMERS - The invention relates to novel conjugated polymers containing one or more repeating units derived from indacenodibenzothiophene or dithia-dicyclopenta-dibenzothiophene, to methods for their preparation and educts or intermediates used therein, to polymer blends, mixtures and formulations containing them, to the use of the polymers, polymer blends, mixtures and formulations as organic semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising these polymers, polymer blends, mixtures or formulations. | 2015-05-28 |
20150144848 | LOW RADIO FREQUENCY LOSS, STATIC DISSIPATIVE ADHESIVES - Low radio frequency loss, static dissipative adhesives are disclosed that have at most 2 percent by weight amorphous carbon dispersed in a cyanate ester resin. The adhesive has an electrical conductivity that dissipates static charge with an electrical resistivity of about 3.0×10 | 2015-05-28 |
20150144849 | COMPOSITE COPPER PARTICLES, AND METHOD FOR PRODUCING SAME - The disclosed composite copper particle includes a core particle including copper, and a coating layer including a copper-tin alloy and formed on the surface of the core particle, the composite copper particle having a particle diameter at 50% cumulative volume in the particle size distribution of 0.1 to 10.0 μm. The alloy is preferably CuSn. The ratio of tin to the the composite copper particle is preferably 3.0 to 12.0 mass %. The composite copper particle is suitably obtained by a method including a step of mixing a reducing agent for tin and an aqueous slurry containing a tin source compound and core particles which include copper, to form a coating layer including a copper-tin alloy on a surface of the core particles. | 2015-05-28 |
20150144850 | METAL OXIDE DISPERSION AND USES THEREOF - The present invention provides a metal oxide dispersion comprises a metal oxide, a millbase and a dispersant. The dispersant in the metal oxide is selected from a group consisting of a phosphoric acid polyester copolymer, a trimethoxysilane compound, a triethoxysilanes compound, dimethylamino ethyl methacrylate (DMAEMA) and a combination thereof, and the dispersion is substantially free of water. The metal oxide dispersion of the invention is useful for manufacturing an inkjet ink to provide a high-quality color image on a contact lens or a mold so as to produce a colored contact lens. | 2015-05-28 |
20150144851 | NESTED LIFT ASSEMBLIES - A lift assembly that includes a base having a first side and a second side opposite the first side. The base defines an outlet positioned closer to the first side than to the second side. The lift assembly further includes a take-up mechanism mounted to the base, and a cable having a stored portion on the take-up mechanism and a free portion extending from the take-up mechanism through the outlet. | 2015-05-28 |
20150144852 | LIFT ASSEMBLY WITH TAPERED DRUMS - A lift assembly including a base, a drive mechanism, and a drum assembly adapted to be driven by the drive mechanism. The drum assembly includes first and second drum segments positioned adjacent each other, each drum segment including a small diameter portion, a large diameter portion, and a tapered portion between the small diameter portion and the large diameter portion. The lift assembly further includes first and second flexible drive elements at least partially wrapped around the small diameter portions of the first and second drum segments, respectively. | 2015-05-28 |
20150144853 | LIFT APPARATUS FOR LIFTING HEAVY LOADS - A lift apparatus having a plurality of cylinder-piston assemblies arranged in pairs with respectively one hydraulic medium supply and drain. For each pair of assemblies, one cylinder-piston assembly is a command assembly and connected thereto is a hydraulic pressure supply. The respective other cylinder-piston assembly is a response assembly, with its supply connected to the drain of the command assembly. For synchronized lifting at several lift points without active regulation, at least three pairs of assemblies hydraulically cooperate with each other in a serial circuit with the hydraulic medium drain of the command assembly of an upstream pair of assemblies is connected to the hydraulic medium supply of the response assembly of the next downstream pair of assemblies and the hydraulic medium drain of the command assembly of the last pair of assemblies is connected to the hydraulic medium supply of the response assembly of a first assembly pair. | 2015-05-28 |
20150144854 | JACKING POLE - A jacking pole apparatus is disclosed. A jacking pole may include two tubular members, slidably engaged with one another in such a manner that they may extend or expand. A jacking pole may engage two surfaces or objects and extend therebetween in order to provide support. Further, a jacking pole may vertically displace an object or surface. A jacking pole utilizes locking mechanisms to remain in certain positions and provide continuous support for surface and objects. The locking mechanisms may also be utilized during vertical displacement in order to facilitate such motion. | 2015-05-28 |
20150144855 | INSULATED FENCE TENSIONER - An insulated fence tensioner for use with a flexible polymer fence rail having at least one electrically conductive member has a metal barrel including a slot for receiving an end of the fence rail. An electrically non-conductive tubular liner is situated within the metal barrel, the liner including two edges defining a slot aligned with the metal barrel slot. An electrically non-conductive sleeve surrounds the metal barrel, the sleeve including two edges defining a slot aligned with the metal barrel slot. One set of the liner and sleeve edges are formed as a pair of folded edges positioned to penetrate the metal barrel slot and overlap the other set of the edges. An electrically non-conductive flange is positioned between the electrically conductive member of the flexible polymer fence rail and the metal mounting bracket of the fence tensioner. | 2015-05-28 |
20150144856 | T-Post Fence Attachment System - A first and second of fence post bracket is provided that function together to secure a wire fence to a T-post fence post. The brackets comprise a complimentary bracket pair that secure a portion of wire fence to a T-post and utilize existing T-post lugs and T-post flanges as support. Each bracket comprises an upstanding portion having a fastener aperture, and a hook end with an open notch. The base of the bracket extends substantially perpendicular to the upstanding portion and includes a U-shaped fitting. The fitting is configured to wrap around the exposed outer edge of a T-post flange, while the upstanding portion is configured to extend away from the post between two T-post lugs. The two brackets are fastened together to provide an enclosed area between the bracket notches and the post, wherethrough a portion of the wire fence is supported. | 2015-05-28 |
20150144857 | METHOD OF FORMING CONTROLLABLY CONDUCTIVE OXIDE - In fabricating a memory device, a first electrode is provided. An alloy is formed thereon, and the alloy is oxidized to provide an oxide layer. A second electrode is provided on the oxide layer. In a further method of fabricating a memory device, a first electrode is provided. Oxide is provided on the first electrode, and an implantation step in undertaken to implant material in the oxide to form a layer including oxide and implanted material having an oxygen deficiency and/or defects therein. A second electrode is the formed on the layer. | 2015-05-28 |
20150144858 | SEMICONDUCTOR DEVICE - The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written. A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the plurality of transistors, and a conductive layer which functions as an antenna. The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order. The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer. | 2015-05-28 |
20150144859 | Top Electrode Blocking Layer for RRAM Device - An integrated circuit device including a resistive random access memory (RRAM) cell formed over a substrate. The RRAM cell includes a top electrode having an upper surface. A blocking layer covers a portion of the upper surface. A via extends above the top electrode within a matrix of dielectric. The upper surface of the top electrode includes an area that interfaces with the blocking layer and an area that interfaces with the via. The area of the upper surface that interfaces with the via surrounds the area of the upper surface that interfaces with the blocking layer. The blocking layer is functional during processing to protect the RRAM cell from etch damage while being structured in such a way as to not interfere with contact between the overlying via and the top electrode. | 2015-05-28 |
20150144860 | RESISTIVE MEMORY ARRAY AND FABRICATING METHOD THEREOF - The present disclosure provides a method of fabricating a resistive memory array. In one embodiment, a method of fabricating a resistive memory array includes forming a plurality of insulators and a conductive structure on a first substrate, performing a resistor-forming process to transform the insulators into a plurality of resistors, polishing the conductive structure to expose a plurality of contact points respectively electrically connected to the resistors, providing a second substrate having a plurality of transistors and a plurality of interconnect pads, bonding respectively the interconnect pads and the contact points, and removing the first substrate from the resistors and the conductive structure. | 2015-05-28 |
20150144861 | RESISTIVE MEMORY AND METHOD FOR FABRICATING THE SAME - Embodiments of the present invention disclose a resistive memory and a method for fabricating the same. The resistive memory comprises a bottom electrode, a resistive layer and a top electrode. The resistive layer is located over the bottom electrode. The top electrode is located over the resistive layer. A conductive protrusion is provided on the bottom electrode. The conductive protrusion is embedded in the resistive layer, and has a top width smaller than a bottom width. Embodiments of the present invention further disclose a method for fabricating a resistive memory. According to the resistive memory and the method for fabricating the same provided by the embodiments of the present invention, by means of providing the conductive protrusion on the bottom electrode, a “lightning rod” effect may be occurred so that an electric field in the resistive layer is intensively distributed near the conductive protrusion. This significantly increases the possibility of generation of a conductive filament at the conductive protrusion, so that the conductive filament is not randomly formed. Thus, the stability of various parameters of the resistive memory is ensured, and thus the reliability and stability of the operation of the resistive memory are dramatically increased. | 2015-05-28 |
20150144862 | Variable Resistance Memory Device and a Method of Fabricating the Same - A variable resistance memory device includes a gate pattern and a dummy gate pattern provided at the same level on a substrate, a first contact pattern provided on the dummy gate pattern, and a variable resistance pattern provided between the dummy gate pattern and the first contact pattern. The gate pattern and the dummy gate pattern define conductive electrodes of functional and non-functional transistors, respectively. The first contact pattern and the dummy gate pattern define upper and lower electrodes on the variable resistance pattern, respectively. Related fabrication methods are also discussed. | 2015-05-28 |
20150144863 | RESISTIVE MEMORY DEVICE AND FABRICATION METHODS - A method for forming a resistive memory device includes providing a substrate comprising a first metal material, forming a conductive silicon-bearing layer on top of the first metal material, wherein the conductive silicon-bearing layer comprises an upper region and a lower region, and wherein the lower region is adjacent to the first metal material, forming an amorphous layer from the upper region of the conductive silicon-bearing layer, and disposing an active metal material above the amorphous layer. | 2015-05-28 |
20150144864 | Memory Arrays and Methods of Forming Memory Cells - Some embodiments include methods of forming memory cells. A stack includes ovonic material over an electrically conductive region. The stack is patterned into rails that extend along a first direction. The rails are patterned into pillars. Electrically conductive lines are formed over the ovonic material. The electrically conductive lines extend along a second direction that intersects the first direction. The electrically conductive lines interconnect the pillars along the second direction. Some embodiments include a memory array having first electrically conductive lines extending along a first direction. The lines contain n-type doped regions of semiconductor material. Pillars are over the first conductive lines and contain mesas of the n-type doped regions together with p-type doped regions and ovonic material. Second electrically conductive lines are over the ovonic material and extend along a second direction that intersects the first direction. The second electrically conductive lines interconnect the pillars along the second direction. | 2015-05-28 |
20150144865 | PHASE-CHANGE MEMORY AND SEMICONDUCTOR RECORDING/REPRODUCING DEVICE - Technology capable of improving performance of a phase-change memory is provided. A recording/reproducing film contains Sn (tin), Sb (antimony), and Te (tellurium) and also contains an element X having a bonding strength with Te stronger than a bonding strength between Sn and Te and a bonding strength between Sb and Te. Here, the recording/reproducing film has a (SnXSb)Te alloy phase, and this (SnXSb)Te alloy phase includes a self-assembled superlattice structure. | 2015-05-28 |
20150144866 | SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE - The present invention provides a memory structure including a resistance-changing storage element, which enables a reset operation with a reset gate and in which cross-sectional areas of a resistance-changing film and a lower electrode in a current-flowing direction can be decreased. The semiconductor device of the present invention comprises a first pillar-shaped semiconductor layer, a gate insulating film formed around the first pillar-shaped semiconductor layer, a gate electrode made of a metal and formed around the gate insulating film, a gate line made of a metal and connected to the gate electrode, a second gate insulating film formed around an upper portion of the first pillar-shaped semiconductor layer, a first contact made of a second metal and formed around the second gate insulating film, a second contact which is made of a third metal and which connects an upper portion of the first contact to an upper portion of the first pillar-shaped semiconductor layer, a second diffusion layer formed in a lower portion of the first pillar-shaped semiconductor layer, a pillar-shaped insulating layer formed on the second contact, a resistance-changing film formed around an upper portion of the pillar-shaped insulating layer, a lower electrode formed around a lower portion of the pillar-shaped insulating layer and connected to the resistance-changing film, a reset gate insulating film that surrounds the resistance-changing film, and a reset gate that surrounds the reset gate insulating film. | 2015-05-28 |
20150144867 | SEMICONDUCTOR PHOSPHOR NANOPARTICLE AND LIGHT-EMITTING DEVICE INCLUDING THE SAME - A semiconductor phosphor nanoparticle includes a semiconductor nanoparticle and a first organic compound. An end of the first organic compound is bonded to a surface of the semiconductor nanoparticle, and the other end of the first organic compound is polymerized to form a first inorganic layer. | 2015-05-28 |
20150144868 | LIGHT-EMITTING ELEMENT - According to one embodiment, a light-emitting element comprises: a first electrically-conductive semiconductor layer, a second electrically-conductive semiconductor layer; and an active layer which is disposed between the first electrically-conductive layer and the second electrically-conductive layer, and in which a well layer and a barrier layer are alternately laminated at least once. The active layer comprises: a first region which is disposed between a neighbouring barrier layer and well layer, and linearly reduces the energy band gap; and a second region which is disposed between a neighbouring well layer and barrier layer, and linearly increases the energy band gap. In the well layer, at least one first region and second region neighbouring the same well layer have mutually different thicknesses. | 2015-05-28 |
20150144869 | GROUP-III NITRIDE STRUCTURE - Group-III nitride structure comprising at least one structure pyramid having a base having at least four sides. The structure pyramid comprises an inner pyramid having a base having at least four sides, which inner pyramid is made of a first group-III nitride. The inner pyramid is coated with an inner first layer made of a second group-III nitride and an outer second layer made of a third group-III nitride, wherein the second group-III nitride has a lower band gap than the first group-III nitride and a lower band gap than the third group-III nitride. The base of the structure pyramid is elongated resulting in an upper ridge creating at least one anisotropic quantum dot. | 2015-05-28 |
20150144870 | SEMICONDUCTOR LIGHT-EMITTING DEVICE - The present disclosure relates to a semiconductor light emitting device, comprising: a supporting substrate having a first surface and a second surface opposite to the first surface; at least one semiconductor stack formed on the first surface, wherein each stack includes a plurality of semiconductor layers grown sequentially using a growth substrate and composed of a first semiconductor layer, a second semiconductor layer, and an active layer generating light via electron-hole recombination, and wherein a growth substrate-removed surface is formed on the side of the first semiconductor layer; a bonded layer, which bonds the second semiconductor layer side of the plurality of semiconductor layers to the first surface side of the supporting substrate; and a bonded layer-removed surface formed on the first surface, being open towards the plurality of semiconductor layer to supply current thereto. | 2015-05-28 |
20150144871 | Laterally-Injected Light-Emitting Diode and Laser Diode - A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems. | 2015-05-28 |
20150144872 | Optoelectronic Integrated Circuit - A semiconductor device includes a substrate supporting a plurality of layers that include at least one modulation doped quantum well (QW) structure offset from a quantum dot in quantum well (QD-in-QW) structure. The modulation doped QW structure includes a charge sheet spaced from at least one QW by a spacer layer. The QD-in-QW structure has QDs embedded in one or more QWs. The QD-in-QW structure can include at least one template/emission substructure pair separated by a barrier layer, the template substructure having smaller size QDs than the emission substructure. A plurality of QD-in-QW structures can be provided to support the processing (emission, absorption, amplification) of electromagnetic radiation of different characteristic wavelengths (such as optical wavelengths in range from 1300 nm to 1550 nm). The device can realize an integrated circuit including a wide variety of devices that process electromagnetic radiation at a characteristic wavelength(s) supported by the QDs of the QD-in-QW structure(s). Other semiconductor devices are also described and claimed. | 2015-05-28 |
20150144873 | NANOSTRUCTURE SEMICONDUCTOR LIGHT EMITTING DEVICE - A nanostructure semiconductor light emitting device includes a plurality of light emitting nanostructures, each of which including a nanocore formed of a first conductivity-type semiconductor material, and an active layer and a second conductivity-type semiconductor layer sequentially disposed on a surface of the nanocore, a contact electrode disposed on a surface of the second conductivity-type semiconductor layer and formed of a transparent conductive material, a first light transmissive portion filling space between the plurality of light emitting nanostructures and formed of a material having a first refractive index, and a second light transmissive portion disposed on an upper surface of the first light transmissive portion to cover the plurality of light emitting nanostructures and formed of a material having a second refractive index higher than the first refractive index. | 2015-05-28 |
20150144874 | UV LIGHT EMITTING DIODE AND METHOD OF FABRICATING THE SAME - A UV light emitting diode and a method of fabricating the same are provided. The light emitting diode includes an active area between an n-type nitride-based semiconductor layer and a p-type nitride-based semiconductor layer, wherein the active area includes a plurality of barrier layers containing Al, a plurality of well layers containing Al and alternately arranged with the barrier layer, and at least one conditioning layer. Each conditioning layer is placed between the well layer and the barrier layer adjacent to the well layer and is formed of a binary nitride semiconductor. The design of the conditioning layer can reduce stress of the active area while allowing uniform control of the composition of the well layers and/or the barrier layers. | 2015-05-28 |
20150144875 | ULTRAVIOLET SEMICONDUCTOR LIGHT-EMITTING DEVICE AND FABRICATION METHOD - An ultraviolet semiconductor light emitting device includes: a light-emitting epitaxial layer including an n-type semiconductor layer, a light-emitting layer, and a p-type semiconductor layer; a tunnel junction at a non-light-emitting surface of the light-emitting epitaxial layer and having a patterned structure with openings to expose the light-emitting epitaxial layer; an optical phase matching layer over a surface layer of the light-emitting epitaxial layer and transmissive of UV light; and a reflecting layer covering the entire tunneling junction and the optical phase matching layer. A patterned structure is provided over the tunnel junction for full-angle light reflection. Part of the tunneling junction forms ohmic contact with the low work function reflecting metal. The patterned distribution design can effectively reduce the ohmic contact resistance. | 2015-05-28 |
20150144876 | SEMICONDUCTOR ELEMENT AND METHOD FOR PRODUCING THE SAME - A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer. | 2015-05-28 |
20150144877 | VERTICAL SEMICONDUCTOR DEVICES INCLUDING SUPERLATTICE PUNCH THROUGH STOP LAYER AND RELATED METHODS - A semiconductor device may include a substrate, and a plurality of fins spaced apart on the substrate. Each of the fins may include a lower semiconductor fin portion extending vertically upward from the substrate, and at least one superlattice punch-through layer on the lower fin portion. The superlattice punch-through layer may include a plurality of stacked groups of layers, with each group of layers of the superlattice punch-through layer comprising a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. Each fin may also include an upper semiconductor fin portion on the at least one superlattice punch-through layer and extending vertically upward therefrom. The semiconductor device may also include source and drain regions at opposing ends of the fins, and a gate overlying the fins. | 2015-05-28 |
20150144878 | SEMICONDUCTOR DEVICES INCLUDING SUPERLATTICE DEPLETION LAYER STACK AND RELATED METHODS - A semiconductor device may include an alternating stack of superlattice and bulk semiconductor layers on a substrate, with each superlattice layer including a plurality of stacked group of layers, and each group of layers of the superlattice layer including a plurality of stacked base semiconductor monolayers defining a base semiconductor portion and at least one non-semiconductor monolayer constrained within a crystal lattice of adjacent base semiconductor portions. The semiconductor device may further include spaced apart source and drain regions in an upper bulk semiconductor layer of the alternating stack of superlattice and bulk semiconductor layers, and a gate on the upper bulk semiconductor layer between the spaced apart source and drain regions. | 2015-05-28 |
20150144879 | PHOTODETECTORS AND PHOTOVOLTAICS BASED ON SEMICONDUCTOR NANOCRYSTALS - A composite material is described. The composite material comprises semiconductor nanocrystals, and organic molecules that passivate the surfaces of the semiconductor nanocrystals. One or more properties of the organic molecules facilitate the transfer of charge between the semiconductor nanocrystals. A semiconductor material is described that comprises p-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of electrons in the semiconductor material being greater than or equal to a mobility of holes. A semiconductor material is described that comprises n-type semiconductor material including semiconductor nanocrystals. At least one property of the semiconductor material results in a mobility of holes in the semiconductor material being greater than or equal to a mobility of electrons. | 2015-05-28 |
20150144880 | NON-PLANAR GATE ALL-AROUND DEVICE AND METHOD OF FABRICATION THEREOF - A non-planar gate all-around device and method of fabrication thereby are described. In one embodiment, the device includes a substrate having a top surface with a first lattice constant. Embedded epi source and drain regions are formed on the top surface of the substrate. The embedded epi source and drain regions have a second lattice constant that is different from the first lattice constant. Channel nanowires having a third lattice are formed between and are coupled to the embedded epi source and drain regions. In an embodiment, the second lattice constant and the third lattice constant are different from the first lattice constant. The channel nanowires include a bottom-most channel nanowire and a bottom gate isolation is formed on the top surface of the substrate under the bottom-most channel nanowire. A gate dielectric layer is formed on and all-around each channel nanowire. A gate electrode is formed on the gate dielectric layer and surrounding each channel nanowire. | 2015-05-28 |
20150144881 | DIRECT AND SEQUENTIAL FORMATION OF MONOLAYERS OF BORON NITRIDE AND GRAPHENE ON SUBSTRATES - The invention generally related to a method for preparing a layer of graphene directly on the surface of a substrate, such as a semiconductor substrate. The layer of graphene may be formed in direct contact with the surface of the substrate, or an intervening layer of a material may be formed between the substrate surface and the graphene layer. | 2015-05-28 |
20150144882 | CONTROLLED EPITAXIAL BORON NITRIDE GROWTH FOR GRAPHENE BASED TRANSISTORS - We have demonstrated controlled growth of epitaxial h-BN on a metal substrate using atomic layer deposition. This permits the fabrication of devices such as vertical graphene transistors, where the electron tunneling barrier, and resulting characteristics such as ON-OFF rate may be altered by varying the number of epitaxial layers of h-BN. Few layer graphene is grown on the h-BN opposite the metal substrate, with leads to provide a vertical graphene transistor that is intergratable with Si CMOS technology of today, and can be prepared in a scalable, low temperature process of high repeatability and reliability. | 2015-05-28 |
20150144883 | FORMING RECESSED STRUCTURE WITH LIQUID-DEPOSITED SOLUTION - A damascene approach is used to form a recessed structure in a substrate for receiving liquid-deposited solution, such as a carbon nanotube (CNT) solution. The liquid-deposited solution is built-up in the recessed structure, simplifying the coating process and providing a more uniform thickness of the liquid-deposited layer. | 2015-05-28 |
20150144884 | GRAPHENE FILM, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE - A reliable graphene film that provides complete semiconductive properties without mixing of metallic properties, redacts an off current, achieves a high current on/off ratio of 10 | 2015-05-28 |
20150144885 | GRAPHENE STRUCTURE AND METHOD OF MANUFACTURING THE GRAPHENE STRUCTURE, AND GRAPHENE DEVICE AND METHOD OF MANUFACTURING THE GRAPHENE DEVICE - A graphene structure and a method of manufacturing the graphene structure, and a graphene device and a method of manufacturing the graphene device. The graphene structure includes a substrate; a growth layer disposed on the substrate and having exposed side surfaces; and a graphene layer disposed on the side surfaces of the growth layer. | 2015-05-28 |
20150144886 | FINFET WITH MERGE-FREE FINS - A semiconductor device comprises an insulation layer, an active semiconductor layer formed on an upper surface of the insulation layer, and a plurality of fins formed on the insulation layer. The fins are formed in the gate and spacer regions between a first source/drain region and second source/drain region, without extending into the first and second source/drain regions. | 2015-05-28 |
20150144887 | MANUFACTURABLE SUB-3 NANOMETER PALLADIUM GAP DEVICES FOR FIXED ELECTRODE TUNNELING RECOGNITION - A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nano gap. | 2015-05-28 |
20150144888 | MANUFACTURABLE SUB-3 NANOMETER PALLADIUM GAP DEVICES FOR FIXED ELECTRODE TUNNELING RECOGNITION - A technique is provided for manufacturing a nanogap in a nanodevice. An oxide is disposed on a wafer. A nanowire is disposed on the oxide. A helium ion beam is applied to cut the nanowire into a first nanowire part and a second nanowire part which forms the nanogap in the nanodevice. Applying the helium ion beam to cut the nanogap forms a signature of nanowire material in proximity to at least one opening of the nanogap. | 2015-05-28 |
20150144889 | ORGANIC X-RAY DETECTOR WITH BARRIER LAYER - An organic x-ray detector and a method of making the organic x-ray detector are disclosed. The x-ray detector includes a TFT array disposed on a substrate, an organic photodiode layer disposed on the TFT array, a barrier layer disposed on the photodiode layer, and a scintillator layer disposed on the barrier layer, such that the barrier layer includes at least one inorganic material. | 2015-05-28 |
20150144890 | Structure to Enhance Light Extraction and Lifetime of OLED Devices - A device having high index layers is provided. The device includes an organic light emissive device, an air interface, a first planarization layer, and a first barrier layer. The first planarization layer is disposed between the air interface and the organic light emissive device and has an index of refraction of at least 1.6. The first barrier layer is disposed between the first planarization layer and the organic emissive device and has an index of refraction of at least 1.6. | 2015-05-28 |
20150144891 | ORGANIC LIGHT-EMITTING DIODE (OLED) DISPLAY CAPABLE OF CONTROLLING LIGHT TRANSMITTANCE - An organic light-emitting diode (OLED) display capable of controlling light transmittance is disclosed. In one aspect, the OLED display includes a plurality of pixels, each including a first region configured to emit light and a second region configured to transmit light therethrough and a plurality of first electrodes respectively formed in the first regions of the pixels. The OLED display also includes a plurality of organic layers respectively formed over the first electrodes, a second electrode formed over all of the organic layers, and a plurality of third electrodes each formed in the second regions of the pixels. The OLED display further includes a plurality of solvents respectively placed over the third electrodes, wherein each of the solvents is configured to selectively block light and a fourth electrode formed over the solvents for all of the pixels. | 2015-05-28 |
20150144892 | Capacitor Structures for Display Pixel Threshold Voltage Compensation Circuits - A display may have an array of organic light-emitting diode display pixels. Each display pixel may have a light-emitting diode that emits light under control of a thin-film drive transistor. Each display pixel may have thin-film transistors and capacitor structures that form a circuit for compensating the drive transistor for threshold voltage variations. The capacitor structures may be formed from interleaved stacked conductive plates. The conductive plates may be formed from layers of material that are used in forming the drive transistor and other thin-film transistors such as a semiconductor layer, a first metal layer, a second metal layer, a third metal layer, and interposed dielectric layers. | 2015-05-28 |
20150144893 | DISPLAY SUBSTRATE AND DRIVING METHOD THEREOF, DISPLAY APPARATUS - A display substrate and a driving method thereof, and a display apparatus are provide. The display substrate includes an array of a plurality of sub-pixels having at least two colors, wherein the sub-pixels of each color constitute a plurality of sub-pixel sets, each of the sub-pixel sets includes at least two sub-pixels of the same color and arranged adjacently in a first direction, and sub-pixel sets of different colors are arranged alternately in the first direction. The display substrate may be applied to display devices, particularly to organic light emitting diode display devices using different organic light emitting layer materials for different sub-pixels. | 2015-05-28 |
20150144894 | ORGANIC LIGHT EMITTING DEVICE AND DISPLAY DEVICE - An organic light emitting device and a display device is provided. The organic light emitting device includes an anode, a cathode, and a light emitting layer disposed between the anode and the cathode; an electron transport layer disposed between the cathode and the light emitting layer, and the material of the electron transport layer is an organic metal chelate. | 2015-05-28 |
20150144895 | ORGANIC ELECTROLUMINESCENT DEVICE - The present specification discloses an organic electroluminescent device including: a substrate; a cathode provided on the substrate; a light emitting layer provided on the cathode; an anode provided on the light emitting layer; a first p-type organic material layer provided between the cathode and the light emitting layer; and a first n-type organic material layer provided between the first p-type organic material layer and the light emitting layer. | 2015-05-28 |
20150144896 | STACKED ORGANIC LIGHT EMITTING DIODE - The present specification discloses an organic electroluminescent device including: an anode; a cathode; and two or more light emitting units provided between the anode and the cathode and including a light emitting layer, in which a light emitting unit among the light emitting units, which is the most associated with the cathode, includes a first n-type organic material layer provided on the cathode side of the light emitting layer, and a first p-type organic material layer is provided between the light emitting unit among the light emitting units, which is the most associated with the cathode, and the cathode. | 2015-05-28 |
20150144897 | ORGANIC LIGHT EMITTING DIODE - The present disclosure provides an organic light emitting device that includes a first electrode, a second electrode, and two or more light emitting units provided between the first electrode and the second electrode, wherein a charge generation layer is provided between, among the light emitting units, two light emitting units that are adjacent to each other, an electron transport layer is provided between the charge generation layer and the light emitting unit placed closer to the first electrode of the two adjacent light emitting units, and the electron transport layer includes a first electron transport layer doped with an n-type dopant, and a second electron transport layer doped with a metal salt, metal oxide or organic metal salt. | 2015-05-28 |
20150144898 | ORGANIC ELECTROLUMINESCENT DEVICE - The present invention discloses an “organic light-emitting device (OLED)”, comprising an anode, a cathode, and one or more organic layers, wherein the said organic layer contains at least one compound having the formula (I), and the said OLED has the advantages of excellent light-emitting efficiency, excellent color purity and long lifetime. | 2015-05-28 |
20150144899 | METHOD OF MAKING A STACK OF THE TYPE COMPRISING A FIRST ELECTRODE, AN ACTIVE LAYER, AND A SECOND ELECTRODE - A method of making a stack of the type comprising a first electrode, an active layer, and a second electrode, for use in an electronic device, in particular of the organic photodetector type or the organic solar cell type, the method comprising the following steps:
| 2015-05-28 |
20150144900 | LAYERED STRUCTURE FOR OLED DEVICE, METHOD FOR MANUFACTURING THE SAME, AND OLED DEVICE HAVING THE SAME - A layered structure for an organic light-emitting diode (OLED) device, the layered structure including a light-transmissive substrate and an internal extraction layer formed on one side of the light-transmissive substrate, in which the internal extraction layer includes (1) a scattering area containing scattering elements composed of solid particles and pores, the solid particles having a density that decreases as it goes away from the interface with the light-transmissive substrate, and the pores having a density that increases as it goes away from the interface with the light-transmissive substrate, and (2) a free area where no scattering elements are present, formed from the surface of the internal extraction layer, which is opposite to the interface, to a predetermined depth. | 2015-05-28 |
20150144901 | ORGANIC LIGHT-EMITTING DIODE - An organic light-emitting diode includes a carrier substrate, a scattering layer, a first electrode, an organic layer sequence with at least one active layer, and a second electrode wherein all the components are arranged in the stated sequence, the scattering layer has a higher average refractive index than the organic layer sequence, the first electrode has at least n or at least n+1 non-metal layers and n metal layers, n is a natural number greater than or equal to 1 or greater than or equal to 2, and the non-metal layers and the metal layers succeed one another alternately. | 2015-05-28 |